Mask pattern correction method

Abstract

A mask layout correction method includes: providing an initial target layout, the initial target layout including a plurality of initial first target patterns and a plurality of second target patterns arranged along a first direction, wherein the length of the second target patterns is less than the length of the initial first target patterns in a second direction, and the first and second directions are perpendicular to each other; obtaining a plurality of patterns to be processed and a plurality of reference patterns corresponding to each pattern to be processed in the initial target layout, wherein the pattern to be processed is an initial first target pattern adjacent to a second target pattern, and the reference pattern is a second target pattern adjacent to the pattern to be processed; obtaining a plurality of adjacent and corresponding regions on the pattern to be processed according to each reference pattern; and performing compensation processing on the pattern to be processed according to the corresponding regions corresponding to each reference pattern to obtain a target layout. This effectively improves the performance of the formed semiconductor structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a mask pattern correction method. Background Technology

[0002] Photolithography is a crucial technology in semiconductor manufacturing, enabling the transfer of patterns from a photomask to the surface of a silicon wafer, forming semiconductor products that meet design requirements. However, existing photolithography techniques often suffer from optical proximity effects.

[0003] To correct the optical proximity effect, Optical Proximity Correction (OPC) was developed. The core idea of ​​OPC is to establish an optical proximity correction model based on the consideration of counteracting the optical proximity effect. The photomask pattern is then designed according to this model. Although the lithographic pattern exhibits an optical proximity effect relative to the corresponding photomask pattern, this effect has already been considered when designing the photomask pattern based on the OPC model. Therefore, the lithographic pattern after photolithography is close to the target pattern actually desired by the user.

[0004] However, the performance of semiconductor structures formed by photomasks after optical proximity correction in the prior art still needs to be improved. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a mask pattern correction method that can effectively improve the performance of the formed semiconductor structure.

[0006] To address the aforementioned technical problems, the present invention provides a mask layout correction method, comprising: providing an initial target layout, the initial target layout including a plurality of initial first target graphics and a plurality of second target graphics arranged along a first direction, wherein, in a second direction, the length of the second target graphics is less than the length of the initial first target graphics, and the first and second directions are perpendicular to each other; obtaining a plurality of graphics to be processed and a plurality of reference graphics corresponding to each graphics to be processed in the initial target layout, wherein the graphics to be processed are initial first target graphics adjacent to the second target graphics, and the reference graphics are second target graphics adjacent to the graphics to be processed; obtaining a plurality of adjacent and corresponding regions on the graphics to be processed according to each reference graphic; and performing compensation processing on the graphics to be processed according to the corresponding regions corresponding to each reference graphic to obtain a target layout.

[0007] Optionally, the method for obtaining several adjacent regions corresponding to the reference graphics on the graphic to be processed, based on each reference graphic, includes: dividing the graphic to be processed into regions to obtain m adjacent initial regions, where m is a natural number greater than or equal to 1; providing n preset ranges, wherein different preset ranges do not overlap, where n is a natural number greater than or equal to 1; and obtaining the positioning parameter L of the k-th initial region relative to any reference graphic. k When the positioning parameter L k Within the i-th preset range, the k-th initial region is at least a part of the i-th corresponding region of the reference graphic, where k and i are both natural numbers, and 1≤k≤m, 1≤i≤n.

[0008] Optionally, in the second direction, the outline of the graphic to be processed includes opposing first and second sides; the plurality of reference graphics includes a first reference graphic adjacent to the first side.

[0009] Optionally, the method for compensating the image to be processed includes: when the k-th initial region is at least a part of the i1-th corresponding region, obtaining the compensation parameter T corresponding to the i1-th corresponding region. i The i1th corresponding region is the i-th corresponding region of the first reference graphic; according to the compensation parameter T i The image to be processed in the kth initial region is compensated.

[0010] Optionally, the compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

[0011] Optionally, the first compensation parameter A i =(W i -W ipre ) / 2, the W i It is the uncompensated linewidth value of the i1th corresponding region, the W ipre It is the line width of the graphic to be processed in the first direction in the i1th corresponding region.

[0012] Optionally, the compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

[0013] Optionally, the second compensation parameter B i =(S i-S ipre ) / 2, the S i It is the uncompensated contour spacing value of the i1th corresponding region, the S ipre It is the distance in the first direction between the second side in the i1 corresponding region and the outline of the initial first target graphic adjacent to the second side.

[0014] Optionally, some of the reference patterns may also include a second reference pattern adjacent to the second side.

[0015] Optionally, the method for compensating the image to be processed includes: when the k-th initial region is at least a part of the i1-th corresponding region, and the k-th initial region is at least a part of the v2-th corresponding region, obtaining a compensation parameter T that corresponds to both the i1-th and v2-th corresponding regions. iv The i1th corresponding region is the i-th corresponding region of the first reference graphic, and the v2th corresponding region is the v-th corresponding region of the second reference graphic, where v is a natural number and 1 ≤ v ≤ n; according to the compensation parameter T iv The image to be processed in the kth initial region is compensated.

[0016] Optionally, the compensation parameter T iv Including: Third compensation parameter C iv The third compensation parameter C iv This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

[0017] Optionally, the method for compensating the graphic to be processed further includes: shifting the first edge of the k-th initial region toward the graphic to be processed by a distance X. K1 And offset the second edge of the k-th initial region toward the graphic to be processed by a distance X. K2 And X K1 =X K2 =C iv .

[0018] Optionally, the third compensation parameter C iv =(W iv -W ivpre ) / 2, the W iv It is the uncompensated linewidth value corresponding to both the i1-th and v2-th regions, the W ivpre It is the line width in the first direction of the portion of the graphic to be processed that is simultaneously located in the i1 corresponding region and the v2 corresponding region.

[0019] Optionally, the method for compensating the image to be processed further includes: when the k-th initial region is at least a part of the i1-th corresponding region, and the positioning parameter L k2 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the i1th region. i The positioning parameter L k2 L is the positioning parameter L of the k-th initial region relative to the second reference image. k According to the compensation parameter T i The image to be processed in the kth initial region is compensated.

[0020] Optionally, the compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

[0021] Optionally, the compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

[0022] Optionally, the method for compensating the graphic to be processed further includes: shifting the first edge of the k-th initial region toward the graphic to be processed by a distance X. K1 And X K1 =A i +B i Offset the second edge of the k-th initial region by a distance X in the direction away from the graphic to be processed. K2 And X K2 =B i .

[0023] Optionally, the method for compensating the image to be processed further includes: when the k-th initial region is at least a part of the region corresponding to v2, and the positioning parameter L k1 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the region corresponding to v2. v The positioning parameter L k1 L is the positioning parameter L of the k-th initial region relative to the first reference image. k According to the compensation parameter T v The image to be processed in the kth initial region is compensated.

[0024] Optionally, the compensation parameter T vIncludes: First compensation parameter A v The first compensation parameter A v This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

[0025] Optionally, the compensation parameter T v It also includes: the second compensation parameter B v The second compensation parameter B v This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

[0026] Optionally, the method for compensating the graphic to be processed further includes: offsetting the second edge of the k-th initial region toward the graphic to be processed by a distance X. K2 And X K2 =A v +B v Offset the first edge of the k-th initial region by a distance X in the direction away from the graphic to be processed. K1 And X K1 =B v .

[0027] Optionally, the method for dividing the graphic to be processed into regions and obtaining m adjacent initial regions includes: obtaining m positioning lines extending along a first direction, the m positioning lines being adjacent and arranged along a second direction, and in the first direction, all m positioning lines penetrating the graphic to be processed; obtaining m adjacent initial regions based on the m positioning lines, each initial region being penetrated by one positioning line.

[0028] Optionally, the method for obtaining m positioning lines extending along the first direction includes: providing m positioning patterns extending along the first direction, the m positioning patterns being adjacent and arranged along the second direction; obtaining m positioning lines based on the m positioning patterns, each positioning line being the center line of one positioning pattern in the first direction.

[0029] Optionally, the positioning pattern is used to form a pseudo-gate structure or a gate structure.

[0030] Optionally, in the first direction, each reference pattern is traversed by at least one of the m positioning lines; the positioning parameter L of the k-th initial region relative to each reference pattern is obtained. k The method includes: obtaining a baseline for each reference graphic, wherein the baseline is a positioning line that passes through the reference graphic among the m positioning lines; and obtaining the positioning parameter L of the k-th initial region relative to each reference graphic based on the baseline and the positioning line that passes through the k-th initial region. k .

[0031] Optionally, when the number of the baselines is one, the positioning parameter L k The distance between the positioning line passing through the k-th initial region and the baseline in the second direction; when there are multiple baselines, the positioning parameter L... k The minimum distance between the positioning line that passes through the k-th initial region in the second direction and each baseline.

[0032] Optionally, when the positioning line passing through the k-th initial region is the baseline, the positioning parameter L... k =Q; When the positioning line passing through the kth initial region is not the baseline, the positioning parameter L k =Q+1, where Q is the number of positioning lines that are spaced between the positioning line that passes through the k-th initial region and the baseline in the second direction.

[0033] Optionally, the positioning parameter L k It is the distance between the k-th initial region and the reference pattern.

[0034] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0035] In the mask layout correction method provided by the present invention, several adjacent and corresponding regions are obtained on the pattern to be processed according to each reference pattern, and the pattern to be processed is compensated according to the corresponding region corresponding to each reference pattern to obtain the target layout. Therefore, it can not only pre-compensate the initial first target pattern (pattern to be processed) that is affected (attracted) by the second target pattern (reference pattern) during the subsequent exposure process, but also divide the corresponding regions according to the different effects of each reference pattern on the pattern to be processed at different positions during the exposure process. Therefore, it can perform more targeted and accurate compensation processing according to the degree of the influence on the pattern to be processed, thereby better reducing the deviation between the size and position of the semiconductor structure formed after the exposure process and the target size and position, and thus effectively improving the performance of the semiconductor structure.

[0036] Furthermore, since the positioning pattern is used to form a pseudo-gate structure or a gate structure, when acquiring the corresponding region, the correlation between the deviation of the size and position and the degree of impact on the actual semiconductor device performance can be established more clearly. That is, the corresponding region can be divided according to the different degrees of impact on the performance of the semiconductor device at different positions caused by the deviation of the semiconductor structure formed by the pattern to be processed. Thus, while improving the performance of the semiconductor structure formed by the target layout, the region in the pattern to be processed that needs to be compensated is reduced, thereby improving the efficiency of the compensation processing of the pattern to be processed. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the pattern to be corrected in an optical proximity correction method.

[0038] Figure 2 This is a schematic diagram of an exposure pattern in an optical proximity correction method.

[0039] Figure 3 This is a schematic flowchart of a mask layout correction method according to an embodiment of the present invention;

[0040] Figures 4 to 21 yes Figure 3 A structural diagram of each step in the process flow diagram. Detailed Implementation

[0041] As described in the background section, the image quality after optical proximity correction in the prior art still needs improvement. The following will provide a detailed explanation in conjunction with the accompanying drawings.

[0042] The existing optical proximity correction process is as follows: providing a target pattern; performing optical proximity correction processing on the target pattern several times to obtain an optical proximity corrected pattern; performing simulated exposure processing on the optical proximity corrected pattern to obtain an exposed image; when the exposed image meets the expected placement edge error (EPE), the obtained exposed image is considered to meet the requirements, and a mask is made using the optical proximity corrected pattern.

[0043] However, the target layout cut off by the pseudo-gate structure (such as...) Figure 1 As shown, during the optical proximity correction process, since the target pattern contains long cut-off bars 100 and short cut-off bars 101, the short cut-off bars 101 will attract the long cut-off bars 100 during the optical proximity correction process. This causes the long exposure cut-off bar 200 obtained after exposure processing to move closer to the short exposure cut-off bar 201 (e.g., ...). Figure 2 As shown in the figure, this leads to a smaller gap d1 between the cut-off point of the pseudo-gate structure formed by the attracted long exposure cut-off pattern 200 and the fin. The corresponding gate opening formed during the subsequent removal of the pseudo-gate structure is also smaller. When the gate opening is smaller, it is not conducive to the filling of the gate dielectric material, resulting in a reduction in the performance of the final semiconductor structure.

[0044] To address the aforementioned technical problems, this invention provides a mask layout correction method. This method involves obtaining several adjacent and corresponding regions on the pattern to be processed based on each reference pattern, and then performing compensation processing on the pattern to be processed according to the corresponding regions of each reference pattern to obtain the target layout. Therefore, the deviation between the size and position of the formed semiconductor structure and the target size and position is reduced, thereby effectively improving the performance of the semiconductor structure.

[0045] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0046] Figure 3 This is a schematic flowchart of a mask layout correction method according to an embodiment of the present invention.

[0047] Please refer to Figure 3 The mask layout correction method includes:

[0048] Step S100: Provide an initial target layout, the initial target layout including a plurality of initial first target graphics and a plurality of second target graphics arranged along a first direction, and in a second direction, the length of the second target graphics is less than the length of the initial first target graphics, and the first direction and the second direction are perpendicular to each other;

[0049] Step S200: Obtain several graphics to be processed and several reference graphics corresponding to each graphics to be processed from the initial target layout. The graphics to be processed are the initial first target graphics adjacent to the second target graphics, and the reference graphics are the second target graphics adjacent to the graphics to be processed.

[0050] Step S300: Based on each reference graphic, obtain several adjacent and corresponding regions on the graphic to be processed;

[0051] Step S400: Based on the corresponding region corresponding to each reference graphic, perform compensation processing on the graphic to be processed to obtain the target layout.

[0052] Since several adjacent and corresponding regions are obtained on the pattern to be processed based on each reference pattern, and the pattern to be processed is compensated according to the corresponding region corresponding to each reference pattern to obtain the target layout, it is possible not only to pre-compensate the initial first target pattern (pattern to be processed) that is affected (attracted) by the second target pattern (reference pattern) during the subsequent exposure process, but also to divide the corresponding regions according to the different effects of each reference pattern on the pattern to be processed at different positions during the exposure process. Therefore, it is possible to perform more targeted and accurate compensation processing according to the degree of the influence on the pattern to be processed, thereby better reducing the deviation between the size and position of the semiconductor structure formed after the exposure process and the target size and position, and thus effectively improving the performance of the semiconductor structure.

[0053] Figures 4 to 21 yes Figure 3 A structural diagram of each step in the process flow diagram.

[0054] Please refer to Figure 4 An initial target layout 300 is provided, which includes a plurality of initial first target graphics 301 and a plurality of second target graphics 302 arranged along a first direction X. In the second direction Y, the length H2 of the second target graphics 302 is less than the length H1 of the initial first target graphics 301. The first direction X and the second direction Y are perpendicular to each other.

[0055] Specifically, in this embodiment, the initial target layout 300 is used to cut off the pseudo gate structure or the gate structure.

[0056] It should be noted that Figure 4 The diagram only schematically shows a portion of the initial first target graphic 301 and the second target graphic 302. The length H1 of each initial first target graphic 301 may be the same or different. Similarly, the length H2 of each second target graphic 302 may be the same or different.

[0057] Please refer to Figures 5 to 8 Several graphics to be processed and several reference graphics corresponding to each graphics to be processed are obtained from the initial target layout 300. The graphics to be processed are the initial first target graphics 301 adjacent to the second target graphics 302, and the reference graphics are the second target graphics 302 adjacent to the graphics to be processed.

[0058] In this embodiment, the plurality of graphics to be processed include: graphics to be processed 401, graphics to be processed 501, graphics to be processed 601 and graphics to be processed 701.

[0059] It should be noted that, for ease of explanation, the graphic to be processed 401 and its reference graphic, the graphic to be processed 501 and its reference graphic, the graphic to be processed 601 and its reference graphic, and the graphic to be processed 701 and its reference graphic are respectively illustrated in different accompanying drawings. Figure 5 The diagram illustrates the graphic to be processed, 401, and its reference graphic. Figure 6 The diagram illustrates the graphic to be processed, 501, and its reference graphic. Figure 7 The diagram illustrates the graphic to be processed, 601, and its reference graphic. Figure 8 The diagram illustrates the graphic to be processed, 701, and its reference graphic.

[0060] In other embodiments, among the plurality of graphics to be processed and reference graphics, there may be one or more graphics to be processed and reference graphics other than all graphics to be processed and reference graphics.

[0061] In this embodiment, in the second direction Y, the outline of the graphic to be processed includes a first side and a second side opposite to each other.

[0062] Specifically, in the second direction Y, the outline of the graphic to be processed 401 includes a first side 411 and a second side 412, the outline of the graphic to be processed 501 includes a first side 511 and a second side 512, the outline of the graphic to be processed 601 includes a first side 611 and a second side 612, and the outline of the graphic to be processed 701 includes a first side 711 and a second side 712.

[0063] In this embodiment, the plurality of reference graphics includes a first reference graphic adjacent to the first side.

[0064] Specifically, the plurality of reference graphics include first reference graphics 430, 530, 630, and 730. Specifically, first reference graphics 430 is the first reference graphics adjacent to the first side 411, first reference graphics 530 is the first reference graphics adjacent to the first side 511, first reference graphics 630 is the first reference graphics adjacent to the first side 611, and first reference graphics 730 is the first reference graphics adjacent to the first side 711.

[0065] In this embodiment, the plurality of reference patterns further includes a second reference pattern adjacent to the second side.

[0066] Specifically, the plurality of reference patterns further includes a second reference pattern 540, a second reference pattern 640, and a second reference pattern 740. The second reference pattern 540 is adjacent to the second side 512, the second reference pattern 640 is adjacent to the second side 612, and the second reference pattern 740 is adjacent to the second side 712.

[0067] It should be noted that, in this embodiment, none of the several reference graphics have a second reference graphic adjacent to the second side 412 of the graphic to be processed 401.

[0068] Therefore, through the subsequent compensation processing method in this embodiment, more targeted compensation can be performed according to whether the graphic to be processed is affected by a reference graphic (first reference graphic or second reference graphic) on both sides of the first direction X, or whether the graphic to be processed is affected by the first reference graphic and the second reference graphic on both sides of the first direction X, thereby improving the accuracy of the compensation processing of the mask layout correction method.

[0069] Next, based on each reference graphic, several adjacent and corresponding regions are obtained on the graphic to be processed.

[0070] In this embodiment, the method for obtaining several adjacent and corresponding regions on the graphic to be processed based on each reference graphic includes: dividing the graphic to be processed into regions to obtain m adjacent initial regions, where m is a natural number greater than or equal to 1; providing n preset ranges, wherein different preset ranges do not overlap, where n is a natural number greater than or equal to 1; and obtaining the positioning parameter L of the k-th initial region relative to any reference graphic. k When the positioning parameter L k Within the i-th preset range, the k-th initial region is at least a part of the i-th corresponding region of the reference graphic, where k and i are natural numbers, and 1 ≤ k ≤ m, 1 ≤ i ≤ n. For the specific process of obtaining the corresponding region, please refer to [reference needed]. Figures 9 to 13 .

[0071] Please Figures 5 to 8 Based on reference Figures 9 to 12 The image to be processed is divided into regions to obtain m adjacent initial regions R, where m is a natural number greater than or equal to 1.

[0072] It should be noted that regions can be divided separately for each graphic to be processed, or multiple or all graphic to be processed can be divided simultaneously, and m initial regions R can be obtained for each graphic to be processed. Furthermore, the number of initial regions R for each graphic to be processed can be the same or different, depending on the actual situation. For example, regions can be divided separately for graphic 401 and graphic 501, and the number of initial regions R obtained for graphic 401 is different from the number of initial regions R obtained for graphic 501. Alternatively, regions can be divided separately for graphic 401 and graphic 501, and the number of initial regions R obtained for graphic 401 is the same as the number of initial regions R obtained for graphic 501. Similarly, depending on the actual situation, the initial regions R of each graphic to be processed can have the same region length HN in the second direction Y (e.g., Figure 5 As shown in the figure, different region lengths HN can also be used.

[0073] In this embodiment, the graphics to be processed 401, 501, 601, and 701 are simultaneously divided into regions. Therefore, the computational load during the mask layout correction process can be reduced, thereby improving the efficiency of the correction process.

[0074] In this embodiment, the method for dividing the graphic to be processed into regions and obtaining m adjacent initial regions R includes: obtaining m positioning lines 801 extending along a first direction X, the m positioning lines 801 being adjacent and arranged along a second direction Y, and in the first direction X, all m positioning lines 801 penetrating the graphic to be processed; obtaining m adjacent initial regions R based on the m positioning lines 801, each initial region R being penetrated by one positioning line 801.

[0075] In other embodiments, a method for dividing a graphic to be processed into regions and obtaining m adjacent initial regions includes: providing a region length in a second direction; dividing the graphic to be processed into regions from one end to the other along a first direction according to the region length, and obtaining m adjacent initial regions.

[0076] In this embodiment, the method for obtaining m positioning lines 801 extending along the first direction X includes: providing m positioning patterns 810 extending along the first direction X (such as...). Figure 13 As shown), m positioning patterns 810 are adjacent and arranged along the second direction Y; m positioning lines 801 are obtained based on the m positioning patterns 810, and each positioning line 801 is the center line of a positioning pattern 810 in the first direction X.

[0077] In this embodiment, the positioning pattern 810 is used to form a pseudo-gate structure or a gate structure.

[0078] Since the positioning pattern 810 is used to form a pseudo-gate structure or a gate structure, when acquiring the corresponding region, the correlation between the deviation of the size and position and the degree of impact on the actual semiconductor device performance can be established more clearly. That is, the corresponding region can be divided according to the different degrees of impact of the deviation of the semiconductor structure formed by the pattern to be processed on the performance of the semiconductor device at different positions (e.g., the degree of impact of the deviation on the filling gate material after removing the pseudo-gate material, or the degree of impact on the filling of other materials at the position, etc.). Thus, while improving the performance of the semiconductor structure formed by the target layout, the region in the pattern to be processed that needs to be compensated is reduced, thereby improving the efficiency of the compensation processing of the pattern to be processed.

[0079] In other embodiments, the positioning line may also be other line segments or straight lines that represent the position of the positioning pattern, such as the straight line containing the outline of the positioning pattern in the second direction.

[0080] In other embodiments, the positioning pattern can be used to form the structure of other semiconductor devices.

[0081] In other embodiments, positioning lines for positioning are provided directly as needed.

[0082] It should be noted that, in order to provide a more concise diagram for easier understanding, Figures 9 to 12 The positioning line 801 is shown only schematically, and the positioning graphic 810, which is the source of the positioning line 801, is not shown.

[0083] Furthermore, for ease of explanation, in this embodiment, the length H1 of each graphic to be processed in the second direction Y (e.g., Figure 4 The same applies to the initial regions R obtained on each graphic to be processed, and the region length HN of the initial region R in the second direction Y (as shown). Figure 5 Using the same example as shown, we will explain further.

[0084] Specifically, in this embodiment, the length H1 of the graphics to be processed 401, 501, 601, and 701 in the second direction Y (e.g., Figure 4 (As shown) Same.

[0085] In this embodiment, m positioning lines 801 extending along the first direction X are obtained. The m positioning lines 801 are adjacent and arranged along the second direction Y. Furthermore, in the first direction X, all m positioning lines 801 penetrate the graphic to be processed 401, all m positioning lines 801 penetrate the graphic to be processed 501, all m positioning lines 801 penetrate the graphic to be processed 601, and all m positioning lines 801 penetrate the graphic to be processed 701.

[0086] Next, m adjacent initial regions R1 are obtained based on m positioning lines 801. Each initial region R1 is traversed by one positioning line 801. The initial region R1 is the initial region R obtained on the graphic to be processed 401.

[0087] Similarly, m adjacent initial regions R2 are obtained based on m positioning lines 801. Each initial region R2 is traversed by one positioning line 801. The initial region R2 is the initial region R obtained on the graphic to be processed 501.

[0088] Similarly, m adjacent initial regions R3 are obtained based on m positioning lines 801. Each initial region R3 is traversed by one positioning line 801. The initial region R3 is the initial region R obtained on the graphic to be processed 601.

[0089] Similarly, m adjacent initial regions R4 are obtained based on m positioning lines 801. Each initial region R4 is traversed by one positioning line 801. The initial region R4 is the initial region R obtained on the graphic to be processed 701.

[0090] In the m adjacent initial regions R1, R2, R3, and R4 obtained, each m is a natural number of the same size, and the length HN of each initial region R1, R2, R3, and R4 in the second direction Y is also the same.

[0091] In this embodiment, in the first direction X, each reference pattern is traversed by at least one of the m positioning lines 801.

[0092] Specifically, in the first direction X, the first reference pattern 430 is penetrated by a positioning line 801; the first reference pattern 530 and the second reference pattern 540 are penetrated by the same positioning line 801; the first reference pattern 630 and the second reference pattern 640 are each penetrated by a positioning line 801, and the positioning line 801 penetrating the first reference pattern 630 and the positioning line 801 penetrating the second reference pattern 640 are two different but adjacent positioning lines 801; the first reference pattern 730 is penetrated by two positioning lines 801, and the second reference pattern 740 is penetrated by one positioning line 801, and the positioning line 801 penetrating the first reference pattern 730 and the positioning line 801 penetrating the second reference pattern 740 are different and non-adjacent positioning lines 801.

[0093] It should be noted that the number of positioning lines 801 running through each reference drawing, and their relative positions, are determined based on actual design requirements. Figures 9 to 12 The text only illustrates some specific situations to facilitate explanation and understanding. Specifically, for ease of understanding, Figures 9 to 12 The example given is m=7.

[0094] Please Figures 9 to 12 Based on reference Figures 14 to 17 Provide n preset ranges, where different preset ranges do not overlap, and n is a natural number greater than or equal to 1; obtain the positioning parameter L of the k-th initial region relative to any reference graphic. k When the positioning parameter L k Within the i-th preset range, the k-th initial region is at least a part of the i-th corresponding region of the reference graphic, where k and i are both natural numbers, and 1≤k≤m, 1≤i≤n.

[0095] It should be noted that, for ease of explanation, Figures 14 to 17 In this context, for each initial region R1, R2, R3, and R4, the value of k increases gradually from bottom to top along the second direction Y. That is, the initial regions R1, R2, R3, and R4 are sorted. Taking each initial region R1 as an example, along the second direction Y, the initial regions R1 from bottom to top are: the 1st initial region R1, the 2nd initial region R1, the 3rd initial region R1, ..., the 7th initial region R1. Therefore, Figure 14 The first initial region R1 to the seventh initial region R1 are represented from bottom to top along the second direction Y. Figure 15 The first initial region R2 to the seventh initial region R2 are represented from bottom to top along the second direction Y. Figure 16The first initial region R3 to the seventh initial region R3 are represented from bottom to top along the second direction Y. Figure 17 The first initial region R4 to the seventh initial region R4 are shown from bottom to top along the second direction Y in order to illustrate the correction method in this embodiment.

[0096] It should be noted that whether or not the m initial regions R are sorted, and the sorting method, does not affect the effectiveness of the technical solution of the present invention. In the actual correction process, the m initial regions R can be sorted, or they can be left unsorted. Furthermore, when sorting the m initial regions R, any sorting can be performed according to the actual correction operation requirements. For example, the initial region R in the exact middle of the m initial regions R can be taken as the first initial region R, or the k value can gradually increase from top to bottom in the second direction Y, etc.

[0097] In this embodiment, two preset ranges are provided, wherein the first preset range is 0 and the second preset range is 1.

[0098] In this embodiment, the positioning parameters L of the k-th initial region R relative to each reference graphic are obtained. k The method includes: obtaining a baseline 811 for each reference graphic, wherein the baseline 811 is a positioning line 801 that passes through the reference graphic among the m positioning lines 801; and obtaining the positioning parameter L of the k-th initial region R relative to each reference graphic based on the baseline 811 and the positioning line 801 that passes through the k-th initial region R. k .

[0099] In other embodiments, the positioning parameter L k This refers to the distance between the k-th initial region and the reference graphic. Specifically, the distance can be the distance between the center of the k-th initial region and the center of the reference graphic, or it can be the minimum distance between the outline of the graphic to be processed in the k-th initial region and the outline of the reference graphic, etc.

[0100] In this embodiment, when the positioning line 801 passing through the kth initial region R is the baseline 811, the positioning parameter L k =Q; When the positioning line 801 passing through the kth initial region R is not the baseline 811, the positioning parameter L k =Q+1, where Q is the number of positioning lines 801 that are spaced between the positioning line 801 that passes through the k-th initial region R and the reference line 811 in the second direction Y.

[0101] It should be noted that in this embodiment, in order to distinguish the positioning parameters L of each graphic to be processed k The reference graphic being targeted will have positioning parameter L.k Divided into positioning parameters L k1 and positioning parameter L k2 Among them, the positioning parameter L k1 L is the positioning parameter L of the k-th initial region relative to the first reference image. k Positioning parameter L k2 L is the positioning parameter L of the k-th initial region relative to the second reference image. k .

[0102] In the m initial regions R1, since the fourth initial region R1 is traversed by the baseline 811, the positioning parameter L of the fourth initial region R1 is... 41 =0, where the baseline 811 is the positioning line 801 that runs through the first reference figure 430.

[0103] Meanwhile, the positioning parameter L 41 =0, meaning the positioning parameter L 41 Within the first preset range, therefore, the fourth initial region R1 is at least a portion of the 0th corresponding region of the first reference pattern 430.

[0104] In the m initial regions R1, since the positioning line 801 passing through the first initial region R1 is not the baseline 811, the positioning parameter L of the first initial region R1 is... 11 =2+1=3.

[0105] Meanwhile, the positioning parameter L 11 Since it is not within either of the two preset ranges, the first initial region R1 is not the corresponding region.

[0106] Similarly, the positioning parameters L of the second initial region R1 21 =1+1=2, the positioning parameter L of the third initial region R1 31 =0+1=1, the positioning parameter L of the 5th initial region R1 51 =0+1=1, the positioning parameter L of the 6th initial region R1 61 =1+1=2, the positioning parameter L of the 7th initial region R1 71 =2+1=3.

[0107] Similarly, the third initial region R1 and the fifth initial region R1 are at least a part of the first corresponding region corresponding to the first reference figure 430. The second initial region R1, the sixth initial region R1, and the seventh initial region R1 are not corresponding regions.

[0108] In the m initial regions R2, since the positioning line 801 passing through the fourth initial region R2 is not only the reference line 811 passing through the first reference pattern 530, but also the reference line 811 passing through the second reference pattern 540, the positioning parameter L of the fourth initial region R2 relative to the first reference pattern 530 is... 41 The positioning parameter L of the fourth initial region R2 relative to the second reference pattern 540 42 Equal, and L 41 =L 42 =0.

[0109] Meanwhile, the fourth initial region R2 is at least a portion of the 0th corresponding region of the first reference pattern 530 and the 0th corresponding region of the second reference pattern 540.

[0110] Similarly, the positioning parameters L of the first initial region R2 11 =L 12 =2+1=3, the positioning parameter L of the second initial region R2 21 =L 22 =1+1=2, the positioning parameter L of the third initial region R2 31 =L 32 =0+1=1, the positioning parameter L of the 5th initial region R2 51 =L 52 =0+1=1, the positioning parameter L of the 6th initial region R2 61 =L 62 =1+1=2, the positioning parameter L of the 7th initial region R2 71 =L 72 =2+1=3.

[0111] Similarly, the third initial region R2 and the fifth initial region R2 are at least a part of the first corresponding region corresponding to the first reference pattern 530 and the first corresponding region corresponding to the second reference pattern 540. Furthermore, the first initial region R2, the second initial region R2, the sixth initial region R2, and the seventh initial region R2 are not corresponding regions.

[0112] In the m initial regions R3, since the positioning line 801 passing through the third initial region R3 is the reference line 811 passing through the first reference pattern 630, the positioning parameter L of the third initial region R3 relative to the first reference pattern 630 is... 31=0. Meanwhile, since the positioning line 801 penetrating the third initial region R3 is not the reference line 811 penetrating the second reference pattern 640, and the number of positioning lines 801 spaced between the positioning line 801 penetrating the third initial region R3 and the reference line 811 penetrating the second reference pattern 640 is 0, therefore, the positioning parameter L of the third initial region R3 relative to the second reference pattern 640 is 0. 32 =0+1=1.

[0113] Meanwhile, the third initial region R3 is at least a part of the 0th corresponding region of the first reference pattern 630, and the third initial region R3 is at least a part of the 1st corresponding region of the second reference pattern 640.

[0114] Similarly, the positioning parameters L of the first initial region R3 11 =1+1=2 and the positioning parameter L 12 =2+1=3, the positioning parameter L of the second initial region R3 21 =0+1=1 and positioning parameter L 22 =1+1=2, the positioning parameter L of the fourth initial region R3 41 =0+1=1 and positioning parameter L 42 =0, the positioning parameter L of the 5th initial region R3 51 =1+1=2 and the positioning parameter L 52 =0+1=1, the positioning parameter L of the 6th initial region R3 61 =2+1=3 and the positioning parameter L 62 =1+1=2, the positioning parameter L of the 7th initial region R3 71 =3+1=4 and positioning parameter L 72 =2+1=3.

[0115] Similarly, the second initial region R3 and the fourth initial region R3 are at least a portion of the first corresponding region of the first reference pattern 630. The first initial region R3, the fifth initial region R3, the sixth initial region R3, and the seventh initial region R3 are not corresponding regions of the first reference pattern 630.

[0116] Similarly, the fourth initial region R3 is at least a portion of the 0th corresponding region of the second reference pattern 640. The fifth initial region R3 is at least a portion of the 1st corresponding region of the second reference pattern 640. The first initial region R3, the second initial region R3, the sixth initial region R3, and the seventh initial region R3 are not corresponding regions of the second reference pattern 640.

[0117] In the m initial regions R4, since the positioning line 801 passing through the fifth initial region R4 is the reference line 811 passing through the first reference pattern 730, the positioning parameter L of the fifth initial region R4 relative to the first reference pattern 730 is... 51 =0. Meanwhile, since the positioning line 801 penetrating the 5th initial region R4 is not the reference line 811 penetrating the second reference pattern 740, and the number of positioning lines 801 between the positioning line 801 penetrating the 5th initial region R4 and the reference line 811 penetrating the second reference pattern 740 is 1, therefore, the positioning parameter L of the 5th initial region R4 relative to the second reference pattern 740 is 0. 52 =1+1=2.

[0118] Meanwhile, the fifth initial region R4 is at least a part of the 0th corresponding region of the first reference pattern 730, and the fifth initial region R4 is not the corresponding region of the second reference pattern 740.

[0119] Similarly, the positioning parameter L of the first initial region R4 11 =3+1=4 and positioning parameter L 12 =1+1=2, the positioning parameter L of the second initial region R4 21 =2+1=3 and the positioning parameter L 22 =0+1=1, the positioning parameter L of the third initial region R4 31 =1+1=2 and the positioning parameter L 32 =0, the positioning parameter L of the fourth initial region R4 41 =0+1=1 and positioning parameter L 42 =0+1=1, the positioning parameter L of the 6th initial region R4 61 =0 and positioning parameter L 62 =2+1=3, the positioning parameter L of the 7th initial region R4 71 =0+1=1 and positioning parameter L 72 =3+1=4.

[0120] Similarly, the fourth initial region R4 and the seventh initial region R4 are at least a portion of the first corresponding region of the first reference pattern 730. The sixth initial region R4 is at least a portion of the zero corresponding region of the first reference pattern 730. The first initial region R4, the second initial region R4, and the third initial region R4 are not corresponding regions of the first reference pattern 730.

[0121] Similarly, the second initial region R4 and the fourth initial region R4 are at least a portion of the first corresponding region of the second reference pattern 740. The third initial region R4 is at least a portion of the zero corresponding region of the second reference pattern 740. The sixth initial region R4 and the seventh initial region R4 are not corresponding regions of the second reference pattern 740.

[0122] In other embodiments, when the number of the baselines is one, the positioning parameter L k The distance between the positioning line passing through the k-th initial region and the baseline in the second direction; when there are multiple baselines, the positioning parameter L... k The minimum distance between the positioning line passing through the k-th initial region and each reference line in the second direction is defined as: the distance along the second direction between the positioning line passing through the k-th initial region and the reference line closest to the positioning line of the k-th initial region.

[0123] It should be noted that preset ranges can be provided according to actual needs. For example, the first preset range can be 0 to 2, the second preset range can be 3 to 5, and so on. Furthermore, more than two preset ranges can also be provided depending on the actual situation. Moreover, the type of the provided preset range and the positioning parameter L... k The type is related, that is, according to the positioning parameter L k The type definition predefined the type range, for example, when the positioning parameter L k When the distance between the k-th initial region and the first reference graphic is specified, the preset range is either a distance parameter or a distance range parameter.

[0124] In this embodiment, the mask layout correction method further includes: classifying the graphic to be processed before subsequent compensation processing; and performing compensation processing on the graphic to be processed according to the type of the graphic to be processed and the corresponding area corresponding to each reference graphic. Thus, during the compensation processing, compensation methods that are not needed in each category can be removed according to the classification, simplifying the computational workload of the actual compensation process and improving the efficiency of the compensation processing.

[0125] Specifically, when the reference graphics of the graphic to be processed include only one of the first reference graphics adjacent to the first side or the second reference graphics adjacent to the second side, the graphic to be processed is a first type of graphic to be processed (e.g., Figure 14 (As shown).

[0126] When the reference graphic of the graphic to be processed simultaneously includes a first reference graphic adjacent to the first side and a second reference graphic adjacent to the second side, and among the m positioning lines, at least one positioning line simultaneously penetrates both the first and second reference graphics, the graphic to be processed is a second type of graphic to be processed (e.g., Figure 15 (As shown).

[0127] When the reference graphic of the graphic to be processed simultaneously includes a first reference graphic adjacent to the first side and a second reference graphic adjacent to the second side, and among the m positioning lines, the positioning line passing through the first reference graphic and the positioning line passing through the second reference graphic are adjacent, the graphic to be processed is a third type of graphic to be processed (e.g., Figure 16 (As shown).

[0128] When the reference graphic of the graphic to be processed simultaneously includes a first reference graphic adjacent to the first side and a second reference graphic adjacent to the second side, and among the m positioning lines, the positioning line passing through the first reference graphic and the positioning line passing through the second reference graphic are spaced apart by a certain number of positioning lines, the graphic to be processed is a fourth type of graphic to be processed (e.g., Figure 17 As shown in the figure, the number of positioning lines at the interval is obtained according to a provided preset range.

[0129] In this embodiment, the number of positioning lines is the same as the maximum preset value of 1 in the two preset ranges, which is 1 line.

[0130] In other embodiments, the graphics to be processed are not classified before compensation processing is performed, thereby increasing the universality of the compensation processing.

[0131] It should be noted that, in this embodiment, based on the positions of the first reference graphic and the second reference graphic of a graphic to be processed, taking the i-th corresponding region as an example, the i-th corresponding region corresponding to the first reference graphic of the graphic to be processed and the i-th corresponding region corresponding to the second reference graphic of the graphic to be processed can be in the same or different positions on the graphic to be processed. Therefore, for ease of understanding and explanation, in this embodiment, the corresponding region corresponding to the first reference graphic and the corresponding region corresponding to the second reference graphic are distinguished according to the first reference graphic and the second reference graphic of each graphic to be processed.

[0132] Taking a single image to be processed that simultaneously has a first reference image and a second reference image as an example: for the image to be processed, the i1th corresponding region is the ith corresponding region corresponding to the first reference image of the image to be processed, and the v2th corresponding region is the vth corresponding region corresponding to the second reference image of the image to be processed, where v is a natural number and 1≤v≤n.

[0133] Specifically, in this embodiment, for the graphic to be processed 401, the i1th corresponding region is the ith corresponding region of the first reference graphic 430.

[0134] For the graphic 501 to be processed, the i1th corresponding region is the ith corresponding region of the first reference graphic 530, and the v2th corresponding region is the vth corresponding region of the second reference graphic 540.

[0135] For the graphic 601 to be processed, the i1th corresponding region is the ith corresponding region of the first reference graphic 630, and the v2th corresponding region is the vth corresponding region of the second reference graphic 640.

[0136] For the graphic 701 to be processed, the i1th corresponding region is the ith corresponding region of the first reference graphic 730, and the v2th corresponding region is the vth corresponding region of the second reference graphic 740.

[0137] It should be noted that, for ease of understanding, in Figures 14 to 17 In this diagram, the i1th corresponding region to the first reference graphic is marked "i1" between the first reference graphic and the first edge. For example, for the graphic to be processed 401, the 01th corresponding region is marked "01" between the first reference graphic 430 and the first edge 411. Similarly, the v2th corresponding region to the second reference graphic is marked "v2" between the second reference graphic and the second edge.

[0138] Next, based on the corresponding region for each reference graphic, compensation processing is performed on the graphic to be processed to obtain the target layout. Please refer to [link / reference needed] for details. Figures 18 to 21 .

[0139] It should be noted that, to obtain the target layout by compensating the graphics to be processed, it means replacing the corresponding graphics to be processed in the initial target layout 300 with each of the compensated graphics to be processed to form the target layout.

[0140] Please Figure 14 Based on reference Figure 18 The method for compensating the graphic 401 to be processed includes: when the k-th initial region R1 is at least a part of the i1-th corresponding region, obtaining the compensation parameter T corresponding to the i1-th corresponding region. i According to the compensation parameter T i The processing graphic 401 of the k-th initial region R1 is compensated.

[0141] Therefore, for the first type of graphic 401 to be processed, only the operation corresponding to the compensation processing when a single reference graphic is used is required. The operation corresponding to the compensation processing related to both the first reference graphic and the second reference graphic can be removed, thereby simplifying the computational workload of the compensation processing.

[0142] In this embodiment, the compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i The line width D1 of the graphic 401 to be processed, used to compensate for the k-th initial region R1, is in the first direction X.

[0143] The first compensation parameter A i =(W i -W ipre ) / 2, the W i It is the uncompensated linewidth value of the i1th corresponding region, the W ipre It is the line width D1 of the graphic 401 to be processed in the first direction X in the i1th corresponding region.

[0144] In this embodiment, the W i It is either a single true detection value or the average of multiple true detection values. Specifically, it is about obtaining W. i The method includes: performing optical proximity correction on the initial target layout 300 to obtain an initial corrected layout (not shown) corresponding to the initial target layout 300; forming a detection pattern layer (not shown) based on the initial corrected layout, the detection pattern layer corresponding to both the initial target layout 300 and the initial corrected layout, the detection pattern layer including a semiconductor structure (not shown) corresponding to the pattern 401 to be processed; measuring any one (not shown) or multiple linewidths of the semiconductor structure corresponding to the pattern 401 to be processed in the region (not shown) corresponding to the i1th corresponding region on the detection pattern layer, and taking the average of the arbitrary one linewidth or the multiple linewidths as the W. i .

[0145] In other embodiments, W is obtained. i The method includes: performing optical proximity correction on the initial target image to obtain an initial corrected image corresponding to the initial target image; performing simulated exposure on the initial corrected image to obtain simulated exposure images corresponding to the initial target image and the initial corrected image, respectively, wherein the simulated exposure images include simulated images to be processed corresponding to the image to be processed; measuring the line width at any one or more points of the simulated image to be processed corresponding to the image to be processed in the region corresponding to the i1th region on the simulated exposure image, and taking the average of the arbitrary one or more line widths as the W. i .

[0146] In other embodiments, the uncompensated linewidth value W can also be provided directly based on experience. i .

[0147] In this embodiment, the compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i The center F of the unprocessed graphic 401 used to compensate for the k-th initial region R1 k The eccentric dimension in the first direction X.

[0148] Second compensation parameter B i =(S i -S ipre ) / 2, the S i It is the uncompensated contour spacing value of the i1th corresponding region, the S ipre It is the distance between the second side 402 in the i1 corresponding region and the outline of the initial first target graphic 301 adjacent to the second side 402 in the first direction X.

[0149] In this embodiment, the S i It is either a true detection value or the average of multiple true detection values. Specifically, it is used to obtain S. i The method includes: performing optical proximity correction on the initial target layout 300 to obtain an initial corrected layout (not shown) corresponding to the initial target layout 300; forming a detection pattern layer (not shown) based on the initial corrected layout, the detection pattern layer corresponding to both the initial target layout 300 and the initial corrected layout; measuring the contour spacing on the detection pattern layer, and using the contour spacing as the uncompensated contour spacing value S. i .

[0150] The contour spacing is: in the detection graphic layer, the spacing (not shown) between any one of the second side structures (not shown) in the region corresponding to the i1th region and the reference contour adjacent to the second side structure in the corresponding region, or the average of multiple spacings along the first direction X.

[0151] The second side structure is the semiconductor structure corresponding to the second side 440 in the detection pattern layer.

[0152] The reference contour is the contour of a semiconductor structure in the detection pattern layer that is adjacent to the second side structure in the corresponding region and corresponds to the initial first target pattern 301.

[0153] Similarly, in other embodiments, S is obtained. iThe method and the method for obtaining S in this embodiment i The difference lies in that the simulated exposure pattern replaces the detection graphic layer, and the uncompensated contour spacing value S is obtained based on the simulated exposure pattern. i .

[0154] In other embodiments, the uncompensated contour spacing value S can also be provided directly based on experience. i .

[0155] Specifically, in this embodiment, the influence of the reference graphic on the first and second sides of the graphic to be processed includes two categories: the first category is the influence of the reference graphic on the line width of the graphic to be processed, and the second category is the influence of the reference graphic on the eccentricity of the center of the graphic to be processed.

[0156] For the graphic 401 to be processed, since the distance between the first side 411 and the first reference graphic 430 is smaller in the first side 411 and the second side 412, the first reference graphic 530 has a greater attraction to the first side 411, so that the first side 411 is affected by the eccentricity of the first reference graphic 530 on both the line width and the center, while the second side 412 is only affected by the eccentricity of the first reference graphic 530 on the center.

[0157] In this embodiment, the method for compensating the graphic 401 to be processed further includes: offsetting the first edge 411 in the k-th initial region R1 towards the graphic 401 to be processed by a distance X. K1 And X K1 =A i +B i Offset the second edge 412 in the k-th initial region R1 by a distance X in the direction away from the graphic 401 to be processed. K2 And X K2 =B i .

[0158] Thus, the effects of line width and center eccentricity on the first side 411 are compensated, and the effects of center eccentricity on the second side 412 are also compensated, making the compensation process for the graphic 401 more targeted and improving the accuracy of the compensation process.

[0159] Specifically, in this embodiment, since the fourth initial region R1 is at least a part of the region corresponding to the first 01, the compensation parameter T0 corresponding to the region corresponding to the first 01 is obtained; according to the compensation parameter T0, the graphic 401 to be processed in the fourth initial region R1 is compensated, wherein the compensation parameter T0 includes A0 and B0.

[0160] In this embodiment, the first edge 411 in the fourth initial region R1 is offset by a distance X towards the graphic 401 to be processed. 41 And X 41 =A0+B0; Offset the second side 412 in the fourth initial region R1 by a distance X in the direction away from the graphic 401 to be processed. 42 And X 42 =B0.

[0161] Similarly, since the third initial region R1 and the fifth initial region R1 are both at least a part of the eleventh corresponding region, the compensation parameter T1 corresponding to the eleventh corresponding region is obtained; according to the compensation parameter T1, the to-be-processed graphic 401 of the third initial region R1 and the fifth initial region R1 is compensated, wherein the compensation parameter T1 includes A1 and B1.

[0162] In this embodiment, the first edge 411 of the third initial region R1 and the fifth initial region R1 is offset by a distance X in the direction toward the graphic 401 to be processed. 31 and X 51 And X 31 =X 51 =A1+B1; Offset the second edge 412 of the third initial region R1 and the fifth initial region R1 by a distance X in the direction away from the graphic 401 to be processed. 32 and X 52 And X 32 =X 52 =B1.

[0163] In this embodiment, since the second initial region R1, the sixth initial region R1, and the seventh initial region R1 are not corresponding regions, no compensation is performed on the unprocessed graphic 401 in the second initial region R1, the sixth initial region R1, and the seventh initial region R1.

[0164] Please Figure 15 Based on reference Figure 19 The method for compensating the graphic 501 to be processed includes: for the graphic 501 to be processed, when the k-th initial region R2 is at least a part of the i1-th corresponding region, and the k-th initial region R2 is at least a part of the v2-th corresponding region, obtaining a compensation parameter T that corresponds to both the i1-th corresponding region and the v2-th corresponding region. iv According to the compensation parameter T iv The unprocessed image 501 of the k-th initial region R2 is compensated.

[0165] It should be noted that, in this embodiment, in order to improve the efficiency of the mask pattern correction method in practical applications, the compensation parameter T is... iv = Compensation parameter T vi In other embodiments, the compensation parameter T can also be adjusted based on the difference in spacing between the two reference graphics on either side of the graphic to be processed in the first direction and the graphic to be processed. iv and compensation parameter T vi By distinguishing between the reference graphics and compensating for the influence of the reference graphics, the relevance and accuracy of the correction method can be improved.

[0166] In this embodiment, the compensation parameter T iv Including: Third compensation parameter C iv The third compensation parameter C iv The line width D2 of the graphic 501 to be processed, used to compensate for the k-th initial region R2, is in the first direction X.

[0167] In this embodiment, the third compensation parameter C iv =(W iv -W ivpre ) / 2, the W iv It is the uncompensated linewidth value corresponding to both the i1-th and v2-th regions, the W ivpre The line width D2 of the portion of the graphic 501 to be processed that is simultaneously located in the i1 corresponding region and the v2 corresponding region is in the first direction X.

[0168] In this embodiment, the W iv It is a single, actual detection value, or the average of multiple actual detection values. Specifically, the detection pattern layer also includes a semiconductor structure (not shown) corresponding to the pattern 501 to be processed. (The last sentence, "Get W," appears to be an error and is left untranslated.) iv The method includes: measuring the linewidth (not shown) or multiple linewidths of the semiconductor structure corresponding to the pattern 501 to be processed in the regions corresponding to both the i1 and v2 regions on the pattern layer for detection, and taking the average of the arbitrary linewidth or the multiple linewidths as the W. iv .

[0169] In other embodiments, W is obtained. ivThe method includes: performing optical proximity correction on the initial target image to obtain an initial corrected image corresponding to the initial target image; performing simulated exposure on the initial corrected image to obtain simulated exposure images corresponding to the initial target image and the initial corrected image, respectively, wherein the simulated exposure images include simulated images to be processed corresponding to the image to be processed; measuring the line width at any one or more locations of the simulated image to be processed corresponding to the image to be processed in the regions corresponding to both the i1th and v2th regions on the simulated exposure image, and taking the average of the arbitrary one or more line widths as the W. iv .

[0170] In other embodiments, the uncompensated linewidth value W can also be provided directly based on experience. iv .

[0171] For the graphic 501 to be processed, since the first reference graphic 530 and the second reference graphic 540 are symmetrical about the center line of the graphic 501 to be processed along the second direction Y in the first direction X, the first side 511 is affected by the line width of the first reference graphic 530, and the second side 512 is affected by the line width of the second reference graphic 540. It should be noted that, since the first reference graphic 530 and the second reference graphic 540 are symmetrical about the center line of the graphic 501 to be processed along the second direction Y in the first direction X, the eccentric effects of the first reference graphic 530 and the second reference graphic 540 on the center of the first side 511 cancel each other out. Similarly, the eccentric effects of the first reference graphic 530 and the second reference graphic 540 on the center of the second side 512 also cancel each other out.

[0172] In this embodiment, based on the compensation parameter T iv The method for compensating the graphic 501 to be processed further includes: offsetting the first edge 511 in the k-th initial region R2 towards the graphic 501 to be processed by a distance X. K1 And offset the second edge 512 in the kth initial region R2 towards the graphic 501 to be processed by a distance X. K2 And X K1 =X K2 =C iv .

[0173] Thus, the line widths of the first side 511 and the second side 512 are compensated respectively, making the compensation processing method for the graphic to be processed 501 more targeted and improving the accuracy of the compensation processing.

[0174] Specifically, in this embodiment, since the fourth initial region R2 is at least a part of both the 01 corresponding region and the 02 corresponding region, the compensation parameter T corresponding to both the 01 corresponding region and the 02 corresponding region is obtained. 00 According to the compensation parameter T 00 The unprocessed image 501 of the fourth initial region R2 is compensated, wherein T 00 =C 00 .

[0175] In this embodiment, the first edge 511 in the fourth initial region R2 is offset by a distance X towards the graphic 501 to be processed. 41 And offset the second side 512 in the fourth initial region R2 towards the graphic 501 to be processed by a distance X. 42 And X 41 =X 42 =C 00 .

[0176] Similarly, since the third initial region R2 and the fifth initial region R2 are at least a part of the 11th corresponding region and the 12th corresponding region, the compensation parameter T corresponding to both the 11th and 12th corresponding regions is obtained. 11 According to the compensation parameter T 11 The processing images 501 of the third initial region R2 and the fifth initial region R2 are compensated respectively, where T 11 =C 11 .

[0177] In this embodiment, the first edge 511 in the third initial region R2 is offset by a distance X towards the graphic 501 to be processed. 31 And offset the second side 512 in the third initial region R2 toward the graphic 501 to be processed by a distance X. 32 And X 31 =X 32 =C 11 .

[0178] In this embodiment, the method for compensating the graphic 501 to be processed in the fifth initial region R2 is the same as the method for compensating the graphic 501 to be processed in the third initial region R2, and will not be described again here.

[0179] In this embodiment, since the first initial region R2, the second initial region R2, the sixth initial region R2, and the seventh initial region R2 are neither the corresponding regions of the first reference pattern 530 nor the corresponding regions of the second reference pattern 540, the pattern 501 to be processed in the first initial region R2, the second initial region R2, the sixth initial region R2, and the seventh initial region R2 is not compensated.

[0180] Please Figure 16 Based on reference Figure 20 The method for compensating the graphic 601 to be processed includes: for the graphic 601 to be processed, when the k-th initial region R3 is at least a part of the i1-th corresponding region, and the k-th initial region R3 is at least a part of the v2-th corresponding region, obtaining a compensation parameter T that corresponds to both the i1-th corresponding region and the v2-th corresponding region. iv According to the compensation parameter T iv The image 601 to be processed in the k-th initial region R3 is compensated.

[0181] In this embodiment, the compensation parameter T iv Including: Third compensation parameter C iv The third compensation parameter C iv The line width D3 of the graphic 601 to be processed, used to compensate for the k-th initial region R3, is in the first direction X.

[0182] In this embodiment, the third compensation parameter C iv =(W iv -W ivpre ) / 2, the W iv It is the uncompensated linewidth value corresponding to both the i1-th and v2-th regions, the W ivpre The line width D3 of the portion of the graphic 601 to be processed that is simultaneously located in the i1 corresponding region and the v2 corresponding region is in the first direction X.

[0183] Specifically, obtain the uncompensated linewidth value W of the image to be compensated, which is graphic 601. iv The method is similar to obtaining the uncompensated linewidth value W of the graphic to be processed 501. iv The method is the same, so I will not repeat it here.

[0184] In this embodiment, based on the compensation parameter T iv The method for compensating the graphic 601 to be processed further includes: shifting the first edge 611 in the k-th initial region R3 toward the graphic 601 to be processed by a distance X. K1And offset the second side 612 in the kth initial region R6 towards the graphic 601 to be processed by a distance X. K2 And X K1 =X K2 =C iv .

[0185] Specifically, in this embodiment, since the third initial region R3 is at least a part of the 01 corresponding region and the 12 corresponding region, the compensation parameter T corresponding to both the 01 corresponding region and the 12 corresponding region is obtained. 01 According to the compensation parameter T 01 The image 601 to be processed in the third initial region R3 is compensated, wherein T 01 =C 01 .

[0186] In this embodiment, the first edge 611 in the third initial region R3 is offset by a distance X towards the graphic 601 to be processed. 31 And offset the second side 612 in the third initial region R3 towards the graphic 601 to be processed by a distance X. 32 And X 31 =X 32 =C 01 .

[0187] Similarly, since the fourth initial region R3 is at least a part of the 11th corresponding region and the 02nd corresponding region, the compensation parameter T corresponding to both the 11th corresponding region and the 02nd corresponding region is obtained. 10 According to the compensation parameter T 10 The image 601 to be processed in the fourth initial region R3 is compensated, wherein T 10 =T 01 =C 01 .

[0188] In this embodiment, the first edge 611 in the fourth initial region R3 is offset by a distance X towards the graphic 601 to be processed. 41 And offset the second side 612 in the fourth initial region R3 towards the graphic 601 to be processed by a distance X. 42 And X 41 =X 42 =C 01 .

[0189] It should be noted that since the image to be processed in the 0th corresponding region is most affected by the reference image, while the 1st corresponding region is relatively less attracted by the reference image, when the kth initial region R is at least a part of the 0th corresponding region of one reference image and at the same time at least a part of the 1st corresponding region of another reference image, in order to balance the efficiency and effectiveness of the correction method in practical applications, C can also be directly made... 01＝ C 00 Therefore, the acquisition of C is reduced. 01 This process reduces the deviation between the size and position of the formed semiconductor structure and the target size and position, while improving the efficiency of mask pattern correction.

[0190] In this embodiment, the method for compensating the graphic 601 to be processed further includes: when the k-th initial region R3 is at least a part of the i1-th corresponding region, and the positioning parameter L... k2 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the i1th region. i According to the compensation parameter T i The processing graphic 601 of the k-th initial region R3 is compensated.

[0191] In this embodiment, the compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i The line width D3 of the graphic 601 to be processed, used to compensate for the k-th initial region R3, is in the first direction X.

[0192] The compensation parameter A i =(W i -W ipre ) / 2, the W i It is the uncompensated linewidth value of the i1th corresponding region, the W ipre It is the line width D3 of the graphic 601 to be processed in the first direction X in the i1 corresponding region.

[0193] Specifically, obtain the uncompensated linewidth value W of the image to be compensated, which is graphic 601. i The method is similar to obtaining the uncompensated linewidth value W of the compensated graphic 401. i The method is the same, so I will not repeat it here.

[0194] In this embodiment, the compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i The center F of the unprocessed graphic 601 used to compensate for the k-th initial region R3k The eccentric dimension in the first direction X.

[0195] Second compensation parameter B i =(S i -S ipre ) / 2, the S i It is the uncompensated contour spacing value of the i1th corresponding region, the S ipre It is the distance between the second side 612 in the i1 corresponding region and the outline of the initial first target pattern 301 adjacent to the second side 612 in the first direction X.

[0196] Specifically, obtain the uncompensated contour spacing value S of the image to be compensated 601. i The method is similar to obtaining the uncompensated contour spacing value S of the compensated graphic 401. i The method is the same, so I will not repeat it here.

[0197] In this embodiment, based on the compensation parameter T i The method for compensating the graphic 601 to be processed in the k-th initial region R3 further includes: offsetting the first edge 611 in the k-th initial region R3 towards the graphic 601 to be processed by a distance X. K1 And X K1 =A i +B i The second side 612 in the k-th initial region R3 is offset by a distance X in the direction away from the graphic 601 to be processed. K2 And X K2 =B i .

[0198] Specifically, since the second initial region R3 is at least a part of the 11th corresponding region, and the second initial region R3 is not the corresponding region of the second reference pattern 640, the compensation parameter T1 corresponding to the 11th corresponding region is obtained; according to the compensation parameter T1, the pattern 601 to be processed in the second initial region R3 is compensated, wherein the compensation parameter T1 includes A1 and B1.

[0199] In this embodiment, the first edge 611 in the second initial region R3 is offset by a distance X towards the graphic 601 to be processed. 21 And X 21 =A1+B1; Offset the second side 612 in the second initial region R3 by a distance X in the direction away from the graphic 601 to be processed. 22 And X 22 =B1.

[0200] In this embodiment, the method for compensating the graphic 601 to be processed further includes: when the k-th initial region R3 is at least a part of the region corresponding to v2, and the positioning parameter L k1 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the region corresponding to v2. v According to the compensation parameter T v The processing graphic 601 of the k-th initial region R3 is compensated.

[0201] In this embodiment, the compensation parameter T v Includes: First compensation parameter A v The first compensation parameter A v The line width D3 of the graphic 601 to be processed, used to compensate for the k-th initial region R3, is in the first direction X.

[0202] The compensation parameter A v =(W v -W vpre ) / 2, the W v It is the uncompensated linewidth value of the region corresponding to v2, the W vpre It is the line width D3 of the graphic 601 to be processed in the first direction X in the region corresponding to v2.

[0203] Specifically, obtain the uncompensated linewidth value W of the image to be compensated, which is graphic 601. v The method is similar to obtaining the uncompensated linewidth value W of the compensated graphic 601. i The method is the same, so I will not repeat it here.

[0204] In this embodiment, the compensation parameter T v It also includes: the second compensation parameter B v The second compensation parameter B v The center F of the unprocessed graphic 601 used to compensate for the k-th initial region R3 k The eccentric dimension in the first direction X.

[0205] Second compensation parameter B v =(S v -S vpre ) / 2, the S v It is the uncompensated contour spacing value of the region corresponding to v2, the S vpre It is the distance between the first side 611 in the region corresponding to v2 and the outline of the initial first target graphic 301 adjacent to the first side 611 in the first direction X.

[0206] Specifically, obtain the uncompensated contour spacing value S of the image to be compensated 601.v The method is similar to obtaining the uncompensated contour spacing value S of the compensated graphic 601. i The method is the same, so I will not repeat it here.

[0207] In this embodiment, based on the compensation parameter T v The method for compensating the graphic 601 to be processed in the k-th initial region R3 further includes: offsetting the second side 612 in the k-th initial region R3 towards the graphic 601 to be processed by a distance X. K2 And X K2 =A v +B v Offset the first edge 611 in the k-th initial region R3 by a distance X in the direction away from the graphic 601 to be processed. K1 And X K1 =B v .

[0208] Specifically, in this embodiment, since the fifth initial region R3 is at least a part of the 12th corresponding region, and the fifth initial region R3 is not the corresponding region of the first reference pattern 630, the compensation parameter T1 corresponding to the 12th corresponding region is obtained; according to the compensation parameter T1, the pattern 601 to be processed of the fifth initial region R3 is compensated, wherein the compensation parameter T1 includes A1 and B1.

[0209] In this embodiment, the second side 612 in the fifth initial region R3 is offset by a distance X towards the graphic 601 to be processed. 52 And X 52 =A1+B1; Offset the first edge 611 in the fifth initial region R3 by a distance X in the direction away from the graphic 601 to be processed. 51 And X 51 =B1.

[0210] In this embodiment, since the first initial region R3, the sixth initial region R3, and the seventh initial region R3 are neither the corresponding regions of the first reference pattern 630 nor the corresponding regions of the second reference pattern 640, the pattern 601 to be processed in the first initial region R3, the sixth initial region R3, and the seventh initial region R3 is not compensated.

[0211] Please Figure 17 Based on reference Figure 21The method for compensating the graphic 701 to be processed includes: for the graphic 701 to be processed, when the k-th initial region R4 is at least a part of the i1-th corresponding region, and the k-th initial region R4 is at least a part of the v2-th corresponding region, obtaining a compensation parameter T that corresponds to both the i1-th corresponding region and the v2-th corresponding region. iv According to the compensation parameter T iv The image 701 to be processed in the k-th initial region R4 is compensated.

[0212] Specifically, obtain the compensation parameter T. iv and according to the compensation parameter T iv The method for compensating the image 701 to be processed in the k-th initial region R4 is similar to the method for obtaining the compensation parameter T for the image 601 to be processed. iv and according to the compensation parameter T iv The method for compensating the unprocessed image 601 of the k-th initial region R3 is the same, and will not be repeated here.

[0213] Specifically, in this embodiment, since the fourth initial region R4 is at least a part of the 11th corresponding region and the 12th corresponding region, the compensation parameter T corresponding to both the 11th and 12th corresponding regions is obtained. 11 According to the compensation parameter T 11 The unprocessed image 701 of the fourth initial region R4 is compensated, wherein T 11 =C 11 .

[0214] In this embodiment, the first edge 711 in the fourth initial region R4 is offset by a distance X towards the graphic 701 to be processed. 41 And offset the second side 712 in the fourth initial region R4 towards the graphic 701 to be processed by a distance X. 42 And X 41 =X 42 =C 11 .

[0215] In this embodiment, the method for compensating the graphic 701 to be processed further includes: when the k-th initial region R4 is at least a part of the i1-th corresponding region, and the positioning parameter L k2 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the i1th region. i According to the compensation parameter T i The processing graphic 701 of the k-th initial region R4 is compensated.

[0216] Specifically, obtain the compensation parameter T. i and according to the compensation parameter T i The method for compensating the image 701 to be processed in the k-th initial region R4 is similar to the method for obtaining the compensation parameter T for the image 601 to be processed. i and according to the compensation parameter T i The method for compensating the unprocessed image 601 of the k-th initial region R3 is the same, and will not be repeated here.

[0217] Specifically, in this embodiment, since the fifth initial region R4 and the sixth initial region R4 are both at least a part of the region corresponding to the 01, and neither the fifth initial region R4 nor the sixth initial region R4 are the corresponding regions of the second reference pattern 740, the compensation parameter T0 corresponding to the region corresponding to the 01 is obtained; according to the compensation parameter T0, the pattern 701 to be processed of the fifth initial region R4 and the sixth initial region R4 is compensated, wherein the compensation parameter T0 includes A0 and B0.

[0218] In this embodiment, the first edges 711 of the 5th initial region R4 and the 6th initial region R4 are offset by a distance X towards the graphic 701 to be processed. 51 and distance X 61 And X 51 =X 61 =A0+B0; Offset the second edge 712 of the 5th initial region R4 and the 6th initial region R4 by a distance X in the direction away from the graphic 701 to be processed. 52 and distance X 62 And X 52 =X 62 =B0.

[0219] Similarly, since the 7th initial region R4 is at least a part of the 11th corresponding region, and the 7th initial region R4 is not the corresponding region of the second reference pattern 740, the compensation parameter T1 corresponding to the 11th corresponding region is obtained; according to the compensation parameter T1, the pattern 701 to be processed of the 7th initial region R4 is compensated, wherein the compensation parameter T1 includes A1 and B1.

[0220] In this embodiment, the first edge 711 in the 7th initial region R4 is offset by a distance X towards the graphic 701 to be processed. 71 And X 71 =A1+B1; Offset the second side 712 in the 7th initial region R4 by a distance X in the direction away from the graphic 701 to be processed. 72 And X 72 =B1.

[0221] In this embodiment, the method for compensating the graphic 701 to be processed further includes: when the k-th initial region R4 is at least a part of the region corresponding to v2, and the positioning parameter L k1 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the region corresponding to v2. v According to the compensation parameter T v The processing graphic 701 of the k-th initial region R4 is compensated.

[0222] Specifically, obtain the compensation parameter T. v and according to the compensation parameter T v The method for compensating the image 701 to be processed in the k-th initial region R4 is similar to the method for obtaining the compensation parameter T for the image 601 to be processed. v and according to the compensation parameter T v The method for compensating the unprocessed image 601 of the k-th initial region R3 is the same, and will not be repeated here.

[0223] Specifically, in this embodiment, since the third initial region R4 is at least a part of the second corresponding region, and the third initial region R4 is not the corresponding region of the first reference pattern 730, the compensation parameter T0 corresponding to the second corresponding region is obtained; according to the compensation parameter T0, the pattern 701 to be processed in the third initial region R4 is compensated, wherein the compensation parameter T0 includes A0 and B0.

[0224] In this embodiment, the second side 712 in the third initial region R4 is offset by a distance X towards the graphic 701 to be processed. 32 And X 32 =A0+B0; Offset the first edge 711 in the 7th initial region R4 by a distance X in the direction away from the graphic 701 to be processed. 31 And X 31 =B0.

[0225] Similarly, in this embodiment, since the second initial region R4 is at least a part of the 12th corresponding region, and the second initial region R4 is not the corresponding region of the first reference pattern 730, the compensation parameter T1 corresponding to the 12th corresponding region is obtained; according to the compensation parameter T1, the pattern 701 to be processed of the second initial region R4 is compensated, wherein the compensation parameter T1 includes A1 and B1.

[0226] In this embodiment, the second side 712 in the second initial region R4 is offset by a distance X towards the graphic 701 to be processed. 22 And X22 =A1+B1; Offset the first edge 711 in the 7th initial region R4 by a distance X in the direction away from the graphic 701 to be processed. 21 And X 21 =B1.

[0227] In this embodiment, since the first initial region R4 is neither the corresponding region of the first reference pattern 730 nor the corresponding region of the second reference pattern 740, no compensation is performed on the first initial region R4.

[0228] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for correcting a mask layout, characterized in that, include: An initial target layout is provided, the initial target layout including a plurality of initial first target graphics and a plurality of second target graphics arranged along a first direction, and in a second direction, the length of the second target graphics is less than the length of the initial first target graphics, and the first direction and the second direction are perpendicular to each other; Several graphics to be processed and several reference graphics corresponding to each graphics to be processed are obtained from the initial target layout. The graphics to be processed are the initial first target graphics adjacent to the second target graphics, and the reference graphics are the second target graphics adjacent to the graphics to be processed. Based on each reference graphic, several adjacent and corresponding regions are obtained on the graphic to be processed; Based on the corresponding region corresponding to each reference graphic, the graphic to be processed is compensated to obtain the target layout. The method for obtaining several adjacent regions corresponding to the reference graphics on the graphic to be processed, based on each reference graphic, includes: dividing the graphic to be processed into regions to obtain m adjacent initial regions, where m is a natural number greater than or equal to 1; providing n preset ranges, wherein different preset ranges do not overlap, where n is a natural number greater than or equal to 1; and obtaining the positioning parameter L of the k-th initial region relative to any reference graphic. k When the positioning parameter L k Within the i-th preset range, the k-th initial region is at least a part of the i-th corresponding region of the reference graphic, where k and i are both natural numbers, and 1≤k≤m, 1≤i≤n.

2. The mask layout correction method as described in claim 1, characterized in that, In the second direction, the outline of the graphic to be processed includes a first side and a second side opposite to each other; the plurality of reference graphics includes a first reference graphic adjacent to the first side.

3. The mask layout correction method as described in claim 2, characterized in that, The method for compensating the image to be processed includes: when the k-th initial region is at least a part of the i1-th corresponding region, obtaining the compensation parameter T corresponding to the i1-th corresponding region. i The i1th corresponding region is the i-th corresponding region of the first reference graphic; according to the compensation parameter T i The image to be processed in the kth initial region is compensated.

4. The mask layout correction method as described in claim 3, characterized in that, The compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

5. The mask layout correction method as described in claim 4, characterized in that, The first compensation parameter A i =(W i -W ipre ) / 2, the W i It is the uncompensated linewidth value of the i1th corresponding region, the W ipre It is the line width of the graphic to be processed in the first direction in the i1th corresponding region.

6. The mask layout correction method as described in claim 4, characterized in that, The compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

7. The mask layout correction method as described in claim 5, characterized in that, Second compensation parameter B i =(S i -S ipre ) / 2, the S i It is the uncompensated contour spacing value of the i1th corresponding region, the S ipre It is the distance in the first direction between the second side in the i1 corresponding region and the outline of the initial first target graphic adjacent to the second side.

8. The mask layout correction method as described in claim 2, characterized in that, The plurality of reference figures also include a second reference figure adjacent to the second side.

9. The mask layout correction method as described in claim 8, characterized in that, The method for compensating the image to be processed includes: when the k-th initial region is at least a part of the i1-th corresponding region, and the k-th initial region is at least a part of the v2-th corresponding region, obtaining a compensation parameter T that corresponds to both the i1-th and v2-th corresponding regions. iv The i1th corresponding region is the i-th corresponding region of the first reference graphic, and the v2th corresponding region is the v-th corresponding region of the second reference graphic, where v is a natural number and 1 ≤ v ≤ n; according to the compensation parameter T iv The image to be processed in the kth initial region is compensated.

10. The mask layout correction method as described in claim 9, characterized in that, The compensation parameter T iv Including: Third compensation parameter C iv The third compensation parameter C iv This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

11. The mask layout correction method as described in claim 10, characterized in that, The method for compensating the graphic to be processed further includes: shifting the first edge of the k-th initial region toward the graphic to be processed by a distance X. K1 And offset the second edge of the k-th initial region toward the graphic to be processed by a distance X. K2 And X K1 =X K2 =C iv .

12. The mask layout correction method as described in claim 11, characterized in that, The third compensation parameter C iv =(W iv -W ivpre ) / 2, the W iv It is the uncompensated linewidth value corresponding to both the i1-th and v2-th regions, the W ivpre It is the line width in the first direction of the portion of the graphic to be processed that is simultaneously located in the i1 corresponding region and the v2 corresponding region.

13. The mask layout correction method as described in claim 9, characterized in that, The method for compensating the image to be processed further includes: when the k-th initial region is at least a part of the i1-th corresponding region, and the positioning parameter L k2 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the i1th region. i The positioning parameter L k2 L is the positioning parameter L of the k-th initial region relative to the second reference image. k According to the compensation parameter T i The image to be processed in the kth initial region is compensated.

14. The mask layout correction method as described in claim 13, characterized in that, The compensation parameter T i Includes: First compensation parameter A i The first compensation parameter A i This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

15. The mask layout correction method as described in claim 14, characterized in that, The compensation parameter T i It also includes: the second compensation parameter B i The second compensation parameter B i This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

16. The mask layout correction method as described in claim 6 or 15, characterized in that, The method for compensating the graphic to be processed further includes: shifting the first edge of the k-th initial region toward the graphic to be processed by a distance X. K1 And X K1 =A i +B i Offset the second edge of the k-th initial region by a distance X in the direction away from the graphic to be processed. K2 And X K2 =B i .

17. The mask layout correction method as described in claim 13, characterized in that, The method for compensating the image to be processed further includes: when the k-th initial region is at least a part of the region corresponding to v2, and the positioning parameter L k1 When the region is not within any one of the n preset ranges, obtain the compensation parameter T corresponding to the region corresponding to v2. v The positioning parameter L k1 L is the positioning parameter L of the k-th initial region relative to the first reference image. k According to the compensation parameter T v The image to be processed in the kth initial region is compensated.

18. The mask layout correction method as described in claim 17, characterized in that, The compensation parameter T v Includes: First compensation parameter A v The first compensation parameter A v This is used to compensate for the line width of the graphic to be processed in the first direction in the kth initial region.

19. The mask layout correction method as described in claim 18, characterized in that, The compensation parameter T v It also includes: the second compensation parameter B v The second compensation parameter B v This is used to compensate for the eccentricity of the center of the graphic to be processed in the k-th initial region in the first direction.

20. The mask layout correction method as described in claim 19, characterized in that, The method for compensating the graphic to be processed further includes: shifting the second edge of the k-th initial region toward the graphic to be processed by a distance X. K2 And X K2 =A v +B v Offset the first edge of the k-th initial region by a distance X in the direction away from the graphic to be processed. K1 And X K1 =B v .

21. The mask layout correction method as described in claim 1, characterized in that, The method for dividing the graphic to be processed into regions and obtaining m adjacent initial regions includes: obtaining m positioning lines extending along a first direction, the m positioning lines being adjacent and arranged along a second direction, and in the first direction, all m positioning lines penetrating the graphic to be processed; obtaining m adjacent initial regions based on the m positioning lines, each initial region being penetrated by one positioning line.

22. The mask layout correction method as described in claim 21, characterized in that, The method for obtaining m positioning lines extending along a first direction includes: providing m positioning patterns extending along the first direction, the m positioning patterns being adjacent and arranged along a second direction; obtaining m positioning lines based on the m positioning patterns, each positioning line being the center line of a positioning pattern in the first direction.

23. The mask layout correction method as described in claim 22, characterized in that, The positioning pattern is used to form a pseudo-gate structure or a gate structure.

24. The mask layout correction method as described in claim 22, characterized in that, In the first direction, each reference pattern is penetrated by at least one of the m positioning lines; Obtain the positioning parameters L of the k-th initial region relative to each reference graphic. k The method includes: obtaining a baseline for each reference graphic, wherein the baseline is a positioning line that runs through the reference graphic among the m positioning lines; Based on the baseline and the positioning line passing through the kth initial region, obtain the positioning parameter L of the kth initial region relative to each reference pattern. k .

25. The mask layout correction method as described in claim 24, characterized in that, When the number of the baselines is 1, the positioning parameter L k The distance between the positioning line passing through the k-th initial region and the baseline in the second direction; when there are multiple baselines, the positioning parameter L... k The minimum distance between the positioning line that passes through the k-th initial region in the second direction and each baseline.

26. The mask layout correction method as described in claim 24, characterized in that, When the positioning line passing through the kth initial region is the baseline, the positioning parameter L k =Q; when the positioning line passing through the kth initial region is not the baseline, the positioning parameter L k =Q+1, where Q is the number of positioning lines that are spaced between the positioning line and the baseline in the second direction, passing through the k-th initial region.

27. The mask layout correction method as described in claim 1, characterized in that, The positioning parameter L k It is the distance between the k-th initial region and the reference pattern.

Images