Substrate processing apparatus, substrate support, method of manufacturing semiconductor device, and recording medium

Abstract

The present invention includes: a processing chamber that performs processing on a substrate; a substrate support that supports the substrate in the processing chamber, a plate-shaped member being provided on the substrate support along the substrate, the plate-shaped member having a different thickness at a central portion and an outer peripheral portion located outward of the central portion.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus, a substrate support, a manufacturing method of a semiconductor device, and a recording medium. BACKGROUND

[0002] As a substrate processing apparatus used in a manufacturing process of a semiconductor device, there is, for example, a so-called vertical apparatus in which a load lock chamber (lower chamber) is provided below a processing tube (reaction tube). Such a substrate processing apparatus is configured to raise and lower a boat (substrate support) that supports a substrate between the processing tube and the load lock chamber, and to perform a prescribed process on the substrate in a state in which the boat is accommodated in the processing tube (for example, refer to Patent Literature 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2002-368062 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technology capable of improving uniformity of in-plane temperature distribution of a substrate in substrate processing.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] According to one embodiment of the present disclosure,

[0010] A technology related to a substrate processing apparatus is provided,

[0011] The substrate processing apparatus has:

[0012] a processing chamber that performs processing on a substrate;

[0013] a substrate support that supports the substrate in the processing chamber,

[0014] a plate-shaped member is provided on the substrate support along the substrate, the plate-shaped member having a different thickness at a central portion and an outer peripheral portion located outward of the central portion.

[0015] EFFECTS OF THE INVENTION

[0016] According to the present disclosure, it is possible to improve uniformity of in-plane temperature distribution of a substrate in substrate processing. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 Fig. 1 is a diagram (Fig. 1) that shows a schematic configuration of a substrate processing apparatus, which is preferably used in one embodiment of the present disclosure, using a longitudinal sectional view to show a processing furnace portion.

[0018] Figure 2 This is a schematic structural diagram of a substrate processing apparatus preferably used in one aspect of this disclosure, and is a diagram (2) showing the processing furnace portion in a longitudinal sectional view.

[0019] Figure 3 In the diagram, (a) is an enlarged view showing an example of the main part structure of a substrate processing apparatus preferably used in one aspect of the present disclosure, and (b) and (c) are enlarged views showing modified examples of the main part structure of a substrate processing apparatus preferably used in one aspect of the present disclosure.

[0020] Figure 4 This is a schematic structural diagram of the controller of a substrate processing apparatus preferably used in one aspect of this disclosure, and is a diagram of the control system of the controller represented by a block diagram.

[0021] Figure 5 This is a flowchart illustrating the film-forming process performed in a substrate processing apparatus preferably used in one aspect of this disclosure. Detailed Implementation

[0022] <One method of this disclosure>

[0023] The following is a reference. Figures 1-5 One aspect of this disclosure will be explained.

[0024] (1) Structure of the substrate processing device

[0025] The substrate processing apparatus of this embodiment is used in the manufacturing process of semiconductor devices and is configured as a vertical substrate processing apparatus that processes multiple substrates (e.g., 5) together. Examples of substrates that are to be processed include semiconductor wafer substrates (hereinafter simply referred to as "wafers") used to manufacture semiconductor integrated circuit devices (semiconductor devices).

[0026] like Figure 1 As shown, the substrate processing apparatus of this embodiment includes a vertical processing furnace 1. The vertical processing furnace 1 includes a heater 10, which serves as a heating unit (heating mechanism, heating system). The heater 10 is cylindrical and is supported on a heater base (not shown), which serves as a holding plate, thereby being mounted vertically relative to the mounting floor of the substrate processing apparatus. The heater 10 also functions as an activation mechanism (activation unit) that uses heat to activate (excite) gases.

[0027] A reaction tube 20 that is concentrically formed with the heater 10 is provided on the inner side of the heater 10. The reaction tube 20 has a double tube structure that includes an inner tube (inner tube) 21 and an outer tube (outer tube) 22 that concentrically surrounds the inner tube 21. The inner tube 21 and the outer tube 22 are each formed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The inner tube 21 is formed in a cylindrical shape with the upper end and the lower end open. The outer tube 22 is formed in a cylindrical shape with the upper end closed and the lower end open. The upper end portion of the inner tube 21 extends to the vicinity of the top of the outer tube 22.

[0028] A processing chamber 23 in which processing of the wafer 200 is performed is formed in the cylindrical hollow portion of the inner tube 21. The processing chamber 23 is configured to be able to accommodate the wafer 200 in a state of being arranged from one end side (lower side) toward the other end side (upper side) in the processing chamber 23. The region in which a plurality of wafers 200 are arranged in the processing chamber 23 is also referred to as a substrate arrangement region (wafer arrangement region). In addition, the direction in which the wafers 200 are arranged in the processing chamber 23 is also referred to as a substrate arrangement direction (wafer arrangement direction).

[0029] A lower chamber (load lock chamber) 30 is provided below the outer tube 22 (reaction tube 20). The lower chamber 30 is formed of a metal material such as stainless steel (SUS) and has a cylindrical shape (a bottomed cylindrical shape) with the inner diameter substantially the same as that of the inner tube 21, the upper end open, and the lower end closed. The lower chamber 30 is provided so as to communicate with the inner tube 21. A flange 31 is provided at the upper end portion of the lower chamber 30. The flange 31 is formed of a metal material such as SUS. The upper end portion of the flange 31 is configured to engage with the lower end portions of the inner tube 21 and the outer tube 22 and support the inner tube 21 and the outer tube 22, that is, the reaction tube 20. The inner tube 21 and the outer tube 22 are vertically installed like the heater 10. A transfer chamber (load lock chamber) 33 that functions as a transfer space for transferring the wafer 200 is formed in the cylindrical hollow portion (closed space) of the lower chamber 30.

[0030] A nozzle 24 that is a gas supply portion is provided in the processing chamber 23 in a manner that penetrates the inner tube 21 and the outer tube 22. The nozzle 24 is formed of a heat-resistant material such as quartz or SiC and is configured as an L-shaped long nozzle. The nozzle 24 is connected to a gas supply pipe 51. The gas supply pipe 51 is connected to two gas supply pipes 52 and 54 and is configured to be able to supply a plurality of, in this case, two kinds of gas into the processing chamber 23. The gas supply pipes 51, 52, and 54 and the gas supply pipes 53, 55, and 56 described later are each formed of a metal material such as SUS.

[0031] A mass flow controller (MFC) 52a and a valve 52b as an on-off valve are provided in this order from the upstream side of the gas flow in the gas supply pipe 52. A gas supply pipe 53 is connected at a position downstream of the valve 52b in the gas supply pipe 52. An MFC 53a and a valve 53b are provided in this order from the upstream side of the gas flow in the gas supply pipe 53.

[0032] An MFC 54a and a valve 54b are provided in this order from the upstream side of the gas flow in the gas supply pipe 54. A gas supply pipe 55 is connected at a position downstream of the valve 54b in the gas supply pipe 54. An MFC 55a and a valve 55b are provided in this order from the upstream side of the gas flow in the gas supply pipe 55.

[0033] A gas supply pipe 56 is connected below the side wall of the lower chamber 30. An MFC 56a and a valve 56b are provided in this order from the upstream side of the gas flow in the gas supply pipe 56.

[0034] The nozzle 24 connected to the top end portion of the gas supply pipe 51 is provided in the space between the inner wall of the inner pipe 21 and the wafer 200 in such a manner as to extend along the inner wall of the inner pipe 21 from the lower region to the upper region of the processing chamber 23 (in such a manner as to stand upward in the arrangement direction of the wafer 200). That is, the nozzle 24 is provided in the region laterally of the wafer arrangement region in which the wafers 200 are arranged, in such a manner as to horizontally surround the wafer arrangement region. A gas supply hole 24a for supplying gas is provided in the side surface of the nozzle 24. The gas supply hole 24a opens toward the center of the reaction pipe 20 and is capable of supplying gas toward the wafer 200. A plurality of gas supply holes 24a are provided from the lower portion to the upper portion of the reaction pipe 20 (nozzle 24) at positions opposite to the wafers 200 supported on the boat 41.

[0035] As the first processing gas (first film forming gas, first metal-containing gas), that is, the raw material gas (raw material), a halosilane-based gas containing silicon (Si) and a halogen element as a main element (predetermined element) constituting a film formed on the wafer 200 can be supplied into the processing chamber 23 from the gas supply pipe 52 via the MFC 52a, the valve 52b, the gas supply pipe 51, and the nozzle 24. The raw material gas refers to a raw material in a gaseous state, such as a gas obtained by gasifying a raw material in a liquid state at normal temperature and pressure, a raw material in a gaseous state at normal temperature and pressure, and the like. The halosilane-based gas refers to a silane-based gas having a halogen group. The halogen group includes a halogen element such as chlorine (Cl), fluorine (F), bromine (Br), and iodine (I). As the halosilane-based gas, for example, a raw material gas containing Si and Cl, that is, a chlorosilane-based gas can be used. The chlorosilane-based gas functions as an Si source. As the chlorosilane-based gas, for example, a hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas can be used.

[0036] As a second processing gas (second film formation gas), i.e., a reaction gas (reactant), an oxygen (O)-containing gas can be supplied from the gas supply pipe 54 via the MFC 54a, the valve 54b, the gas supply pipe 51, and the nozzle 24 into the processing chamber 23. The O-containing gas functions as an O source (oxidizing gas, oxidizer). As the O-containing gas, for example, an oxygen (O2) gas can be used.

[0037] As a non-active gas, for example, a nitrogen (N2) gas can be supplied from the gas supply pipes 53, 55 via the MFCs 53a, 55a, the valves 53b, 55b, the gas supply pipes 51, 52, 54, and the nozzle 24 into the processing chamber 23. The N2 gas functions as a purge gas, a dilution gas, or a carrier gas.

[0038] As a non-active gas, for example, an N2 gas can be supplied from the gas supply pipe 56 via the MFC 56a and the valve 56b into the lower chamber 30. The N2 gas functions as a purge gas.

[0039] A first processing gas supply system (first processing gas supply section) is mainly composed of the gas supply pipe 52, the MFC 52a, and the valve 52b. It is also conceivable to include the gas supply pipe 51 and the nozzle 24 in the first processing gas supply system. A second processing gas supply system (second processing gas supply section) is mainly composed of the gas supply pipe 54, the MFC 54a, and the valve 54b. It is also conceivable to include the gas supply pipe 51 and the nozzle 24 in the second processing gas supply system. A first non-active gas supply system (first non-active gas supply section) is mainly composed of the gas supply pipes 53, 55, the MFCs 53a, 55a, and the valves 53b, 55b. It is also conceivable to include the gas supply pipes 51, 52, 54 and the nozzle 24 in the first non-active gas supply system. A second non-active gas supply system (second non-active gas supply section) is mainly composed of the gas supply pipe 56, the MFC 56a, and the valve 56b.

[0040] At the lower end portion of the outer pipe 22, a suction portion 26, which is a gas stagnation space, i.e., an exhaust buffer, is formed so as to surround the periphery of the outer pipe 22. The suction portion 26 is disposed at a position lower than the heater 10, which is disposed so as to surround the outer pipe 22. The suction portion 26 is configured to communicate with the annular space between the inner pipe 21 and the outer pipe 22, i.e., an exhaust flow path 25, and temporarily stagnate the gas flowing in the exhaust flow path 25.

[0041] An opening 27, which exhausts gas from the inner side of the inner pipe 21 and the transfer chamber 33 to the suction portion 26, is provided below the inner pipe 21. A plurality of openings 27 are provided along the circumferential direction of the inner pipe 21 at positions opposite to the suction portion 26 and as close to the lower chamber 30 as possible.

[0042] The suction portion 26 is connected with an exhaust pipe 61 that exhausts the gas remaining in the suction portion 26. The exhaust pipe 61 is connected with a vacuum pump 64 as a vacuum exhaust device via a pressure sensor 62 as a pressure detector (pressure detection portion) that detects the pressure in the processing chamber 23 and an APC (Auto Pressure Controller) valve 63 as a pressure regulator (pressure regulation portion). The APC valve 63 is configured to open and close the valve in a state in which the vacuum pump 64 is operated, whereby the vacuum exhaust and the vacuum exhaust stop in the processing chamber 23 can be performed, and in a state in which the vacuum pump 64 is operated, the valve opening degree is adjusted according to the pressure information detected by the pressure sensor 62, whereby the pressure in the processing chamber 23 can be adjusted. The exhaust system, i.e., the exhaust line, is mainly composed of the exhaust pipe 61, the APC valve 63, and the pressure sensor 62. It is also possible to consider that the exhaust flow path 25, the suction portion 26, and the vacuum pump 64 are included in the exhaust system.

[0043] A substrate carrying-in / out port 32 is provided above the side wall of the lower chamber 30. Through the substrate carrying-in / out port 32, the wafer 200 is moved in and out of a transfer chamber 33 by a carrying robot not shown. The loading of the wafer 200 into the boat 41 described later and the unloading of the wafer 200 from the boat 41 are performed in the transfer chamber 33.

[0044] The boat 41 as a substrate support is configured to support a plurality of (for example, five) wafers 200 in a horizontal posture and in a state in which the centers thereof are aligned with each other in a vertical direction, i.e., in a state in which the wafers 200 are arranged at intervals. The boat 41 is, for example, composed of a heat-resistant material such as quartz or SiC. A heat insulating portion 42 that supports heat insulating plates composed of a heat-resistant material such as quartz or SiC in a horizontal posture in a plurality of stages is provided in the lower portion of the boat 41. The heat insulating portion 42 can also be composed of a heat insulating cylinder composed of a heat-resistant material such as quartz or SiC.

[0045] A plurality of plate-shaped members (spacers, hereinafter also referred to as plates) 46 are provided in a plurality of stages along the wafers 200 at positions between the adjacent wafers 200 of the boat 41 and at a position below the wafer 200 disposed in the lowermost portion.

[0046] The plurality of plates 46 are arranged in the boat 41 so as not to contact the wafer 200 when the wafer 200 is loaded in the boat 41. In addition, in a state where the plates 46 are arranged in the boat 41 and the wafer 200 is loaded in the boat 41, each surface of the plurality of plates 46 opposes (faces) and is parallel to the back surface of the wafer 200. In this specification, the "surface of the wafer 200" refers to a processed surface of the wafer 200, and the "back surface of the wafer 200" refers to a surface on the opposite side of the processed surface of the wafer 200. In addition, in this specification, the "surface of the plate 46" refers to a surface that opposes the back surface of the wafer 200, and the "back surface of the plate 46" refers to a surface on the opposite side of the surface of the plate 46.

[0047] In a case where the plate 46 does not contact the wafer 200 (the wafer 200 is not placed on the plate 46), a space is formed between the back surface of the wafer 200 and the surface of the plate 46, and thus the heating of the wafer 200 is mainly performed by thermal radiation from the heater 10 and secondary thermal radiation from the plate 46. That is, the heat conduction from the plate 46 is not used for the heating of the wafer 200. Thus, in the film formation processing described later, the temperature of the wafer 200 can be easily made uniform among the plurality of wafers 200. That is, the uniformity of the temperature distribution (inter-wafer temperature) of the wafer 200 in the film formation processing can be improved.

[0048] In addition, by making the surface of the plate 46 parallel to the back surface of the wafer 200, the heat capacity of the space between the back surface of the wafer 200 and the surface of the plate 46 can be made uniform in the back surface of the wafer 200. Thus, the heating of the wafer 200 can be performed uniformly in the plane, and the uniformity of the in-plane temperature distribution (wafer in-plane temperature) of the wafer 200 in the film formation processing described later can be improved.

[0049] The plate 46 is disposed in the boat 41 in a manner that the volume of the space opposed to the surface of the wafer 200 is larger than the volume of the space opposed to the back surface of the wafer 200. That is, the plate 46 is disposed in the boat 41 in a manner that the distance between the surface of the plate 46 and the back surface of the wafer 200 located directly above is shorter than the distance between the back surface of the plate 46 and the surface of the wafer 200 located directly below. Further, the "space opposed to the surface of the wafer 200" in the present specification refers to the space on the surface of the wafer 200, that is, the space on the surface side of the wafer 200 for the gas to flow. The "space opposed to the back surface of the wafer 200" in the present specification refers to the space on the back surface of the wafer 200 (the space between the back surface of the wafer 200 and the surface of the plate 46), that is, the space on the back surface side of the wafer 200 for the gas to flow. Thus, the amount of the gas flowing in the space on the surface of the wafer 200 is larger than the amount of the gas flowing in the space on the back surface of the wafer 200, and therefore, it is possible to suppress the decrease in the film formation rate of the film formation process to be described later. In addition, by increasing the amount of the gas flowing in the space on the surface of the wafer 200, it is possible to suppress the stagnation of the gas on the surface of the wafer 200. Thus, it is possible to improve the in-plane uniformity of the process for the wafer 200.

[0050] The plate 46 is formed in a circular shape in a plan view having a diameter larger than the diameter of the wafer 200, for example. The plate 46 is formed so as to have different thermal capacities in the radial direction corresponding to the distance from the heater 10 within the processing chamber 23. That is, as shown in (a) of FIG. 10, the plate 46 has different thicknesses in the central portion and the outer peripheral portion located outward of the central portion. Thus, it is possible to improve the in-plane temperature uniformity of the wafer in the film formation process to be described later. Figure 3

[0051] The "central portion (of the plate 46)" in the present specification refers to the portion located on the inner side in the radial direction of the plate 46 and the portion of the plate 46 opposed to the wafer 200, and the "outer peripheral portion (of the plate 46)" refers to the portion located on the outer side in the radial direction of the plate 46 and the portion of the plate 46 not opposed to the wafer 200.

[0052] The thickness of the outer peripheral portion of the plate 46 is thicker than the thickness of the central portion, that is, the thermal capacity of the outer peripheral portion of the plate 46 is larger than the thermal capacity of the central portion.

[0053] ​The outer peripheral portion of the wafer 200 is shorter in distance from the heater 10 in the processing chamber 23 than the central portion. Therefore, the outer peripheral portion of the wafer 200 is more likely to absorb the radiant heat from the heater 10 and be heated than the central portion of the wafer 200 at the time of heating of the wafer 200 in the film formation processing. At this time, the heat capacity of the outer peripheral portion of the plate 46 is larger than the heat capacity of the central portion, and thus the outer peripheral portion of the plate 46 is less likely to be heated than the central portion. Therefore, the heat radiation from the plate 46 can be reduced at the outer peripheral portion of the wafer 200 and increased at the central portion of the wafer 200 at the time of heating of the wafer 200 in the film formation processing. As a result, the uniformity of the wafer surface temperature at the time of heating in the film formation processing can be improved.

[0054] In addition, the outer peripheral portion of the wafer 200 is more likely to be cooled than the central portion of the wafer 200 at the time of cooling of the wafer 200 in the film formation processing. At this time, the heat capacity of the outer peripheral portion of the plate 46 is larger than the heat capacity of the central portion, and thus the outer peripheral portion of the plate 46 is less likely to be cooled than the central portion. Therefore, the heat radiation from the plate 46 can be increased at the outer peripheral portion of the wafer 200 and reduced at the central portion of the wafer 200 at the time of cooling of the wafer 200 in the film formation processing. As a result, the uniformity of the wafer surface temperature at the time of cooling in the film formation processing can also be improved.

[0055] Further, in the case where the term "uniformity of the wafer surface temperature at the time of the film formation processing" is used in the present specification, it sometimes indicates "uniformity of the wafer surface temperature at the time of heating", sometimes indicates "uniformity of the wafer surface temperature at the time of cooling", or sometimes includes both of the above.

[0056] The thickness of the outer peripheral portion of the plate 46 can be thicker than the thickness of the central portion over the entire circumference in the circumferential direction. Therefore, the uniformity of the wafer surface temperature at the time of the film formation processing can be reliably improved.

[0057] The thickness of the central portion of the plate 46 can be set to a prescribed thickness in the range of 2 to 7 mm, for example, and the thickness of the outer peripheral portion can be set to a prescribed thickness in the range of 5 to 15 mm, for example. By setting the thickness of the central portion of the plate 46 to the above range, the heat capacity of the central portion can be reduced, and the deformation of the plate 46 in a wavy manner (generation of unevenness) at the time of heating in the film formation processing described later can be suppressed. Therefore, the uniformity of the wafer surface temperature at the time of the film formation processing can be improved. By setting the thickness of the outer peripheral portion of the plate 46 to the above range, the ratio of the heat radiation from the outer peripheral portion to the heat radiation from the central portion of the plate 46 can be set to an appropriate range. Therefore, the uniformity of the wafer surface temperature at the time of the film formation processing can be improved.

[0058] The back surface of the outer peripheral portion of the plate 46 is protruded than the back surface of the central portion. That is, the outer peripheral portion of the plate 46 is protruded downward in the wafer arrangement direction (downward in the thickness direction of the plate 46) to form a convex portion. In this way, the convex portion is formed on the back surface of the outer peripheral portion of the plate 46, and the surface of the plate 46 is set to be a flat surface (flat surface), whereby even if the space on the back surface of the wafer 200 is reduced, the flow of the gas can be inhibited on the back surface of the wafer 200. For example, in the film formation processing described later, the flow of the purge gas in the space on the back surface of the wafer 200 is not inhibited, whereby the accumulation of the reactant, the by-product, and the like to the surface of the plate 46 can be inhibited. As a result, the heat capacity in the radial direction of the plate 46 can be inhibited from changing in the middle of the processing, and the decrease in the uniformity of the wafer surface temperature in the film formation processing described later can be inhibited. In addition, the surface of the plate 46 is a flat surface, whereby when the wafer 200 is loaded and unloaded to and from the boat 41 by the transfer robot, the movement of the arm portion of the transfer robot can be inhibited from being obstructed by the plate 46. For example, the arm portion of the transfer robot can be inhibited from being contacted (hooked) with the convex portion of the plate 46. In addition, the surface of the plate 46 is a flat surface, whereby compared to the case where the back surface of the plate 46 is made flat by forming the convex portion on the surface of the outer peripheral portion of the plate 46, the shortest distance (gap) between the adjacent plates 46 can be increased. Thus, for example, even in the case where the arm portion of the transfer robot is deformed (flexed) due to the support of the wafer 200, the arm portion can be prevented from being contacted with the plate 46 at the time of loading and unloading of the wafer 200.

[0059] The convex portion can be continuously formed on the entire circumference of the outer peripheral portion of the plate 46. Thus, the uniformity of the wafer surface temperature in the film formation processing can be reliably improved. In addition, the flow of the gas can be reliably inhibited on the back surface of the wafer 200.

[0060] The plate 46 is formed of, for example, a heat-resistant material such as quartz or SiC and a high-thermal-conductivity material (material having high thermal conductivity). Thus, the heating efficiency of the plate 46 can be improved. The central portion and the outer peripheral portion of the plate 46 can also be formed of different materials. For example, the central portion of the plate 46 can be formed of a material that easily absorbs heat (heat radiation) from the heater 10 compared to the material forming the outer peripheral portion. Specifically, the central portion of the plate 46 can be formed of, for example, SiC, and the outer peripheral portion of the plate 46 can be formed of, for example, quartz. Thus, the uniformity of the wafer surface temperature in the film formation processing described later can be improved.

[0061] The surface of plate 46 can be configured to have a surface treatment that is close to (equal to) the surface area of ​​the back side of wafer 200. That is, the surface of plate 46 can also have a surface condition close to the surface area of ​​the back side of wafer 200. As an example of the surface treatment described above, there is a coating process in which a layer is formed on the surface of plate 46 by silicon sputtering or the like to increase the surface area of ​​plate 46, for example, a layer whose surface area is close to the surface area of ​​the back side of wafer 200. Another example of the surface treatment described above is a roughening process such as sandblasting. By making the surface area of ​​plate 46 close to the surface area of ​​the back side of wafer 200, for example, the consumption (adsorption) of the first processing gas, the second processing gas, etc., between wafer 200 and plate 46 can be made close. As a result, it is possible to suppress any adverse effects of plate 46 on the film formation process described later.

[0062] The boat 41 is supported by a rod 43. The rod 43 maintains the airtightness of the transfer chamber 33 and extends through the bottom of the lower chamber 30, and is connected to a lifting and rotating mechanism (boat lift) 44 below the lower chamber 30. The lifting and rotating mechanism 44 is configured to lift the wafer 200 supported on the boat 41 vertically between the processing chamber 23 and the transfer chamber 33 by lifting the boat 41. That is, the lifting and rotating mechanism 44 is configured to transport the boat 41, i.e., the wafer 200, between the processing chamber 23 and the transfer chamber 33. For example, when the lifting and rotating mechanism 44 performs the lifting action, the boat 41 rises to... Figure 1 The position shown in the processing chamber 23 (wafer processing position) is such that, when the lifting and rotating mechanism 44 performs its lowering action, the boat 41 descends to... Figure 2 The position within the transfer chamber 33 shown (wafer transport position). Furthermore, the lifting and rotating mechanism 44 is configured to rotate the wafer 200 by rotating the boat 41.

[0063] Alternatively, a cover 47 can be provided near the upper end of the rod 43 and below the heat insulation portion 42 to seal the lower part of the reaction tube 20. By providing the cover 47 to seal the lower part of the reaction tube 20, the diffusion of raw material gas and reaction gas present in the reaction tube 20 into the transfer chamber 33 can be suppressed. In addition, pressure control within the reaction tube 20 becomes easier, and the uniformity of the processing of the wafer 200 can be improved.

[0064] A temperature sensor 11, serving as a temperature detector, is installed inside the inner tube 21. The power supply to the heater 10 is adjusted based on the temperature information detected by the temperature sensor 11, thereby achieving the desired temperature distribution within the processing chamber 23. The temperature sensor 11, like the nozzle 24, is L-shaped and is installed along the inner wall of the inner tube 21.

[0065] like Figure 4As shown, the controller 70 as a control section (control unit) is configured as a computer having a CPU (Central Processing Unit) 71, a RAM (Random Access Memory) 72, a storage device 73, and an I / O port 74. The RAM 72, the storage device 73, and the I / O port 74 are configured to be able to exchange data with the CPU 71 via an internal bus 75. The controller 70 is connected with, for example, an input / output device 82 configured as a touch panel or the like, and an external storage device 81.

[0066] The storage device 73 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 73, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes processes, conditions, and the like of the manufacturing method of the semiconductor device described later, and the like are readably stored. The process recipe is composed in a manner that enables the controller 70 to perform each process (each step) in the manufacturing method of the semiconductor device described later to obtain a prescribed result, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively and simply referred to as a program. In addition, the process recipe is simply referred to as a recipe. In the case where such a term as a program is used in the present specification, only the recipe is sometimes included alone, only the control program is sometimes included alone, or both of them are sometimes included. The RAM 72 is configured as a storage area (work area) that temporarily holds a program, data, and the like read out by the CPU 71.

[0067] The I / O port 74 is connected with the MFCs 52a to 56a, the valves 52b to 56b, the pressure sensor 62, the APC valve 63, the vacuum pump 64, the heater 10, the temperature sensor 11, the lift and rotation mechanism 44, and the like described above.

[0068] The CPU 71 is configured to read out and execute the control program from the storage device 73, and to read out the recipe from the storage device 73 in correspondence with, for example, the input of an operation command from the input / output device 82. The CPU 71 is configured to control, in accordance with the content of the read-out recipe, the flow rate adjustment operation of each gas of the MFCs 52a to 56a, the opening / closing operation of the valves 52b to 56b, the opening / closing operation of the APC valve 63, the pressure adjustment operation of the APC valve 63 based on the pressure sensor 62, the start and stop of the vacuum pump 64, the temperature adjustment operation of the heater 10 based on the temperature sensor 11, the lift operation of the boat 41 based on the lift and rotation mechanism 44, the rotation and speed regulation operation, and the like.

[0069] The controller 70 is configured to install the aforementioned program stored in the external storage device 81 onto a computer. The external storage device 81 includes, for example, magnetic tape, HDD, CD, MO, USB memory, and other semiconductor memory. The storage device 73 and the external storage device 81 constitute a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording media. When the term "recording medium" is used in this specification, sometimes only the storage device 73 is included, sometimes only the external storage device 81 is included, or sometimes both are included. Furthermore, providing the program to the computer may also be done without using the external storage device 81, but using communication means such as the Internet or dedicated lines.

[0070] (2) Substrate processing process

[0071] Using the substrate processing apparatus described above, as a step in the manufacturing process of a semiconductor device, an example of a substrate processing sequence, i.e., a film formation sequence, will be described. This sequence involves forming a silicon oxide (SiO) film as a metal film on a wafer 200, which serves as a substrate. In the following description, the operation of each component of the substrate processing apparatus is controlled by a controller 70.

[0072] exist Figure 5 The film-forming process (film-forming sequence) shown includes the following steps:

[0073] The process involves repeating a predetermined number of cycles of supplying HCDS gas to wafer 200 and supplying O2 gas to wafer 200 separately, thereby forming a film containing Si and O (SiO film) on wafer 200.

[0074] In this specification, for convenience, it is sometimes indicated as follows. Figure 5 The film formation sequence is shown. The same notation is used in the descriptions of other methods, etc., below.

[0075]

[0076] When the term "wafer" is used in this specification, it sometimes means the wafer itself, and sometimes it means a laminate of the wafer and a specified layer or film formed on its surface. When the term "surface of the wafer" is used in this specification, it sometimes means the surface of the wafer itself, and sometimes it means the surface of a specified layer, etc., formed on the wafer. When described in this specification as "forming a specified layer on the wafer," it sometimes means forming the specified layer directly on the surface of the wafer itself, and sometimes it means forming the specified layer on top of a layer, etc., formed on the wafer. The use of the term "substrate" in this specification is the same as the use of the term "wafer."

[0077] (Chip material: S110)

[0078] Multiple wafers 200 (e.g., 5 wafers) are loaded into a boat 41 with multiple plates 46 arranged in a multi-level manner (wafer loading). Specifically, in the transfer chamber 33, with the wafer 200 in the boat 41 positioned opposite the substrate inlet / outlet 32, the wafer 200 is placed in a predetermined position on the boat 41 through the substrate inlet / outlet 32. After loading one wafer 200 into the boat 41, the boat 41 is moved vertically using a lifting and rotating mechanism 44, and other wafers 200 are loaded into other wafer positions on the boat 41. This operation is repeated multiple times. Specifically, wafers 200 are loaded while the boat 41 is lowered. Furthermore, multiple plates 46 are pre-arranged in the boat 41 in a multi-level manner along the wafers 200, such that the positions of adjacent wafers 200 when multiple wafers 200 are loaded and the position below the lowest wafer 200. At this time, the wafer 200 filled in the boat 41 is heated by the plate 46.

[0079] (Boat loading: S120)

[0080] After the wafer 200 is loaded into the boat 41, as Figure 1 As shown, a boat 41 supporting multiple wafers 200 is raised (lifted) and moved into the processing chamber 23 via a lifting and rotating mechanism 44 (boat loading). At this time, the height of the boat 41 is adjusted so that the gas supply holes 24a are positioned between the back surface of the outer periphery of the plate 46 and the surface of the wafer 200 directly below it, and also slightly higher than the surface of the uppermost wafer 200. This allows for reliable gas supply to the surface of each wafer 200.

[0081] (Pressure and temperature adjustment: S130)

[0082] Vacuum pump 64 is used to vent a vacuum (pressure reduction venting) inside processing chamber 23 to achieve the desired pressure (vacuum level) within the processing chamber 23, i.e., the space where wafer 200 is located. The pressure inside processing chamber 23 is measured by pressure sensor 62, and the APC valve 63 is controlled based on this measured pressure information (pressure adjustment). Meanwhile, wafer 200 inside processing chamber 23 is heated by heater 10 to reach the desired processing temperature. The energization of heater 10 is controlled based on temperature information detected by temperature sensor 11 (temperature adjustment) to achieve the desired temperature distribution within processing chamber 23. Furthermore, rotation of wafer 200 based on lifting and rotating mechanism 44 begins. The operation of vacuum pump 64, heating of wafer 200, and rotation continue at least until processing of wafer 200 is complete.

[0083] (SiO film formation: S140)

[0084] Then, the following two steps, i.e., HCDS gas supply step (S141) and O2 gas supply step (S143), are sequentially performed.

[0085] <HCDS gas supply step: S141>

[0086] In this step, HCDS gas is supplied to the wafer 200 in the processing chamber 23.

[0087] Specifically, the valve 52b is opened, and HCDS gas is caused to flow to the gas supply pipe 52. The HCDS gas is flow-regulated by the MFC 52a, and is supplied to the processing chamber 23 via the gas supply pipe 51 and the nozzle 24. The HCDS gas supplied to the processing chamber 23 rises in the processing chamber 23, flows out from the upper end opening of the inner pipe 21 to the exhaust flow path 25, and flows down in the exhaust flow path 25, and is exhausted from the exhaust pipe 61 via the suction portion 26. At this time, the HCDS gas is supplied to the wafer 200. At this time, the valves 53b and 55b are opened, and N2 gas is caused to flow to the processing chamber 23 via the gas supply pipes 51, 53, 55 and the nozzle 24. The supply of N2 gas can also not be performed. The exhaust of the gas from the processing chamber 23 is performed via the suction portion 26, and stabilization of the exhaust operation can be achieved.

[0088] As the processing conditions in this step, the following are exemplified:

[0089] HCDS gas supply flow rate: 0.01 to 2 slm, preferably 0.1 to 1 slm

[0090] N2 gas supply flow rate (per gas supply pipe): 0 to 10 slm

[0091] Each gas supply time: 0.1 to 120 seconds, preferably 0.1 to 60 seconds

[0092] Processing temperature: 250 to 900°C, preferably 400 to 700°C

[0093] Processing pressure: 1 to 2666 Pa, preferably 67 to 1333 Pa.

[0094] Further, the expression of a numerical range such as "1 to 2666 Pa" in this specification means that the lower limit value and the upper limit value are included in the range. Therefore, for example, "1 to 2666 Pa" means "1 Pa or more and 2666 Pa or less". The same applies to other numerical ranges.

[0095] A Si-Cl-containing layer is formed on the surface of the wafer 200 by supplying HCDS gas to the wafer 200 under the above conditions. The Si-Cl-containing layer is formed on the surface of the wafer 200 by chemical adsorption, physical adsorption, chemical adsorption of a substance (Si x Cl y ) resulting from decomposition of HCDS, deposition of Si based on thermal decomposition of HCDS, and the like. The Si-Cl-containing layer can be an adsorption layer (physical adsorption layer, chemical adsorption layer) of HCDS, Si x Cl y , or a deposition layer of Si-Cl. In this specification, the Si-Cl-containing layer is simply referred to as a Si-containing layer.

[0096] At this time, N2 gas is supplied to the transfer chamber 33 (purging of the transfer chamber 33). Specifically, the valve 56b is opened, and N2 gas is caused to flow into the gas supply pipe 56. The N2 gas is flow-regulated by the MFC 56a and supplied into the transfer chamber 33. The N2 gas supplied into the transfer chamber 33 rises in the transfer chamber 33 and is discharged to the suction portion 26 via the opening 27. The N2 gas discharged to the suction portion 26 is discharged from the exhaust pipe 61 together with HCDS gas and the like discharged from the processing chamber 23 to the suction portion 26. The gas discharge from the transfer chamber 33 via the suction portion 26 enables stabilization of the exhaust operation.

[0097] The N2 gas is supplied into the transfer chamber 33 under conditions in which the gas pressure in the transfer chamber 33 is higher than the gas pressure in the processing chamber 23 (the gas pressure in the processing chamber 23 < the gas pressure in the transfer chamber 33), and the flow rate of the gas supplied into the transfer chamber 33 is greater than the total flow rate of the gas supplied into the processing chamber 23 (the total flow rate of the gas supplied into the processing chamber 23 < the flow rate of the gas supplied into the transfer chamber 33).

[0098] After the first layer is formed on the surface of the wafer 200, the valve 52b is closed, and the supply of HCDS gas into the processing chamber 23 is stopped. Then, the gas and the like remaining in the processing chamber 23 are discharged (purged) from the processing chamber 23. At this time, the valves 53b and 55b are opened, and N2 gas is supplied into the processing chamber 23 via the gas supply pipe 51 and the nozzle 24. The N2 gas functions as a purge gas, and thus the processing chamber 23 is purged.

[0099] As the source gas, in addition to the HCDS gas, monochlorosilane (SiH3Cl, abbreviated as: MCS) gas, dichlorosilane (SiH2Cl2, abbreviated as: DCS) gas, trichlorosilane (SiHCl3, abbreviated as: TCS) gas, tetrachlorosilane (SiCl4, abbreviated as: STC) gas, octachlorotrisilane (Si3Cl8, abbreviated as: OCTS) gas, and the like can be used.

[0100] As the inactive gas, in addition to the N2 gas, Ar gas, He gas, Ne gas, Xe gas, and the like can be used. This is also the case in the following steps.

[0101] <0 2 gas supply step: S143>

[0102] In this step, the wafer 200 in the processing chamber 23, i.e., the first layer formed on the wafer 200 is supplied with the O2 gas.

[0103] Specifically, the valve 54b is opened, and the O2 gas is caused to flow into the gas supply pipe 54. The O2 gas is flow-regulated by the MFC 54a, and is supplied into the processing chamber 23 via the gas supply pipe 51, the nozzle 24. The O2 gas supplied into the processing chamber 23 rises in the processing chamber 23, flows out from the upper end opening of the inner pipe 21 into the exhaust flow path 25, and flows down in the exhaust flow path 25, and is exhausted from the exhaust pipe 61 via the suction portion 26. At this time, the wafer 200 is supplied with the O2 gas. At this time, the valves 53b, 55b are closed, and the N2 gas is not supplied into the processing chamber 23 together with the O2 gas. That is, the O2 gas is supplied into the processing chamber 23 without being diluted with the N2 gas, and is exhausted from the exhaust pipe 61. In this way, the O2 gas is supplied into the processing chamber 23 without being diluted with the N2 gas, and thus the film formation rate of the SiO film can be increased.

[0104] In addition, at this time, the N2 gas is supplied into the transfer chamber 33 by the same process as the purge in the transfer chamber 33 in the case of the HCDS gas supply step (S141) described above.

[0105] As the processing conditions in this step, the following are exemplified:

[0106] O2 gas supply flow rate: 0.1 to 10 slm

[0107] Processing pressure: 1 to 4000 Pa, preferably 1 to 3000 Pa.

[0108] The other processing conditions are the same as those in the HCDS gas supply step (S141).

[0109] The wafer 200 is supplied with the O2 gas under the above conditions, whereby at least a part of the first layer formed on the wafer 200 is oxidized (modified). By modifying the first layer, a layer containing Si and O, i.e., a SiO layer, is formed on the wafer 200 as a second layer. At the time of forming the second layer, the impurities such as Cl contained in the first layer constitute a gaseous substance containing at least Cl during the modification reaction of the first layer based on the O2 gas, and are exhausted from the processing chamber 23. Thus, the second layer becomes a layer in which the impurities such as Cl are less than the first layer.

[0110] After the second layer is formed, the valve 54b is closed, and the supply of the O2 gas into the processing chamber 23 is stopped. Then, by the same processing as the purge in the above-described HCDS gas supply step (S141), the gas and the like remaining in the processing chamber 23 are exhausted from the processing chamber 23.

[0111] As the reaction gas (oxidizing agent), in addition to the O2 gas, a nitrogen monoxide (N2O) gas, a nitric oxide (NO) gas, a nitrogen dioxide (NO2) gas, an ozone (O3) gas, water vapor (H2O gas), a carbon monoxide (CO) gas, a carbon dioxide (CO2) gas, or the like containing O gas can be used.

[0112] (Implementation number confirmation: S150)

[0113] By performing the cycle in which the above-described HCDS gas supply step (S141) and the O2 gas supply step (S143) are alternately performed non-simultaneously, i.e., asynchronously, a predetermined number of times (n times, n is an integer of 1 or more), it is possible to form a SiO film on the surface of the wafer 200. The above-described cycle is preferably repeated a plurality of times. That is, it is preferable to make the thickness of the SiO layer formed in each 1 cycle thinner than the desired film thickness, and to repeat the above-described cycle a plurality of times (for example, about 10 to 80 times, more preferably about 10 to 15 times) until the film thickness of the film formed by laminating the SiO layers becomes the desired film thickness (for example, 0.1 to 2 nm). Each time the above-described cycle ends, it is determined whether the cycle has been implemented for a predetermined number of times (a predetermined number of times).

[0114] (Post-purge: S160)

[0115] After it is confirmed that the above-described cycle has been repeated a predetermined number of times, the N2 gas is supplied as a purge gas from the gas supply pipes 53, 55 into the processing chamber 23, and is exhausted from the exhaust pipe 61 via the suction portion 26. Thus, the processing chamber 23 is purged, and the gas and the by-products remaining in the processing chamber 23 are removed from the processing chamber 23.

[0116] (Atmospheric pressure recovery: S170)

[0117] After that, the atmosphere in the processing chamber 23 is replaced with a non-reactive gas (non-reactive gas replacement), and the pressure in the processing chamber 23 is returned to the normal pressure.

[0118] (boat unloading: S180)

[0119] After that, in the reverse order of the boat loading process (S120) described above, the boat 41 is lowered by the lift and rotation mechanism 44, and the processed wafer 200 is carried out from the processing chamber 23 to the transfer chamber 33 (boat unloading) of the lower chamber 30 in a state of being supported by the boat 41. Figure 2

[0120] (wafer unloading: S190)

[0121] After that, in the reverse order of the wafer loading process (S110) described above, the processed wafer 200 is unloaded (removed) from the boat 41 and carried out to the outside of the lower chamber 30 through the substrate carrying-in and carrying-out port 32. Further, the removal of the processed wafer 200 from the boat 41 is started from the lower portion. That is, the boat unloading (S180) and the wafer unloading (S190) are performed in parallel.

[0122] Thus, the film formation process of the SiO layer for the plurality of wafers 200 is completed.

[0123] (3) Effects of the present embodiment

[0124] According to the above-described embodiment, one or more of the following effects can be obtained.

[0125] (a) In the present embodiment, the plate 46 having different thicknesses in the central portion and the outer peripheral portion is arranged along the wafer 200 in the boat 41. That is, the plate 46 having different heat capacities in the radial direction corresponding to the distance from the heater 10 in the processing chamber 23 is arranged along the wafer 200 in the boat 41. Thereby, the uniformity of the wafer surface temperature in the film formation process can be improved.

[0126] (b) In the present embodiment, the thickness of the outer peripheral portion of the plate 46 is made thicker than the thickness of the central portion, and the heat capacity of the outer peripheral portion of the plate 46 is made larger than the heat capacity of the central portion. Thereby, as described above, the uniformity of the wafer surface temperature in the heating and cooling times of the film formation process can be reliably improved.

[0127] (c) In the present embodiment, the plate 46 is arranged in the boat 41 in a manner that the surface of the plate 46 is parallel to the back surface of the wafer 200. Thereby, the heat capacity of the space between the surface of the plate 46 and the back surface of the wafer 200 can be made uniform in the back surface of the wafer 200, and the uniformity of the wafer surface temperature in the film formation process can be more reliably improved.

[0128] ​(d) In this mode, the plate 46 is disposed to the boat 41 in a manner that the space (volume) on the surface of the wafer 200 is larger than the space (volume) on the back surface of the wafer 200. Thereby, the amount of the gas flowing in the space on the surface of the wafer 200 can be made larger than the amount of the gas flowing in the space on the back surface of the wafer 200, and the decrease in the film formation rate of the film formation process can be suppressed. Further, by increasing the amount of the gas flowing in the space on the surface of the wafer 200, the stagnation of the gas on the surface of the wafer 200 can be suppressed, and the in-plane uniformity of the process to the wafer 200 can be improved. Further, even in the case where a gas that generates a substance that easily decomposes by heat, such as HCDS gas (chlorosilane-based gas), is used, the stagnation of the decomposed substance on the surface of the wafer 200 can be suppressed, and the in-plane uniformity of the process to the wafer 200 can be improved.

[0129] (e) In this mode, the plate 46 is disposed to the boat 41 in a manner that a space is formed between the back surface of the wafer 200 and the plate 46 (in a manner that the plate 46 does not contact the wafer 200). Thereby, the heating of the wafer 200 is mainly performed by the heat radiation from the heater 10 and the heat radiation from the plate 46, and the wafer-to-wafer temperature uniformity of the film formation process can be improved.

[0130] (f) In this mode, the outer peripheral portion of the plate 46 is made to protrude downward in the wafer arrangement direction to constitute a convex portion, and the surface of the plate 46 is made to be a flat surface. Thereby, even if the space on the back surface of the wafer 200 is reduced, the flow of the gas can be suppressed from being blocked on the back surface of the wafer 200. Further, when the wafer 200 is loaded and unloaded to and from the boat 41 by the transfer robot, the movement of the arm portion of the transfer robot can be suppressed from being hindered by the plate 46. Further, compared to the case where the convex portion is formed on the surface of the outer peripheral portion of the plate 46 and the back surface of the plate 46 is a flat surface, the shortest distance between the adjacent plates 46 can be increased, and the arm portion of the transfer robot can be prevented from contacting the plate 46 when the wafer 200 is loaded and unloaded to and from the boat 41.

[0131] (4) Modification

[0132] The plate 46 in the present disclosure is not limited to the above-described modes, and can be changed as in the following modifications. These modifications can be arbitrarily combined.

[0133] (Modification 1)

[0134] The thickness of the plate 46 can also be made to increase from the radial inner side toward the outer side. For example, as shown in (b) in FIG. 29, the thickness of the plate 46 can also be made to increase from the radial inner side toward the outer side so that the back surface of the plate 46 is a continuous inclined surface or curved surface without a step. Further, for example, as shown in (c) in FIG. 29, the thickness of the plate 46 can also be made to increase from the radial inner side toward the outer side so that the back surface of the plate 46 is a continuous inclined surface or curved surface without a step. Figure 3 Figure 3 ​As shown in (c) in FIG. 6, the thickness of the plate 46 can also be made to increase in stages (stepped) from the radially inner side toward the radially outer side. According to this modification, the same effects as the above-described mode are obtained.

[0135] (Modification 2)

[0136] The thickness of the plate 46 can also be made to differ depending on the arrangement position in the boat 41. The Center region in the central portion in the wafer arrangement direction in the wafer arrangement region is more easily heated than the Top region on the upper side and the Bottom region on the lower side in the wafer arrangement direction in the wafer arrangement region. Therefore, for example, the thickness of the central portion (thinnest portion) of the plate 46 located in the Center region (the plate 46 arranged in the central portion in the vertical direction of the boat 41) can be made thinner than the thickness of the central portion of the plate 46 located in the Top region or the Bottom region (the plate 46 arranged on the upper side or the lower side in the vertical direction of the boat 41). According to this modification, the wafer-to-wafer temperature uniformity in the film formation process can be reliably improved.

[0137] In addition, for example, the thickness of the central portion (thinnest portion) of the plate 46 located in the Center region can be made thinner than the thickness of the central portion of the plate 46 located in the Top region and the Bottom region. Thereby, the wafer-to-wafer temperature uniformity in the film formation process can be more reliably improved.

[0138] In addition, for example, the thickness of the outer peripheral portion of the plate 46 can be made thicker than the thickness of the central portion, and the thickness of the outer peripheral portion (thickest portion) of the plate 46 located in the Center region can be made thinner than the thickness of the outer peripheral portion of the plate 46 located in the Top region or the Bottom region, preferably the Top region and the Bottom region. Thereby, the wafer-to-wafer temperature uniformity in the film formation process can be more reliably improved.

[0139] (Modification 3)

[0140] The material forming the plate 46 can also be made to differ depending on the arrangement position in the boat 41. That is, the plate 46 located in the Center region (the plate 46 arranged in the central portion in the vertical direction of the boat 41) and the plate 46 located in the Top region or the Bottom region (the plate 46 arranged on the upper side or the lower side in the vertical direction of the boat 41) can also be formed of mutually different materials. For example, the plate 46 located in the Top region or the Bottom region can be formed of a material that more easily absorbs heat from the heater 10 than the plate 46 located in the Center region. According to this modification, the wafer-to-wafer temperature uniformity in the film formation process can be reliably improved.

[0141] Further, for example, the forming material of the plate 46 can be made different depending on the disposition position in the boat 41, and the forming material can be made different between the outer peripheral portion and the central portion of the plate 46. Thus, the same effects as the above-described mode can be obtained, and the wafer-to-wafer temperature uniformity in the film formation processing can be reliably improved.

[0142] (Variation 4)

[0143] The outer peripheral portion of the plate 46 can be formed separately from the central portion, not limited to the case where the outer peripheral portion and the central portion are formed integrally. Thus, the heat capacity in the radial direction of the plate 46 can be easily changed in correspondence with the contents of the film formation processing, and the wafer surface temperature uniformity in the film formation processing can be further improved.

[0144] (Variation 5)

[0145] In the case where the central portion of the wafer 200 is more easily heated (easily cooled) than the outer peripheral portion of the wafer 200, the thickness of the central portion of the plate 46 can be made thicker than the thickness of the outer peripheral portion, and the heat capacity of the central portion of the plate 46 can be made larger than the heat capacity of the outer peripheral portion. Thus, in the heating of the wafer 200 in the film formation processing, the heat radiation from the plate 46 can be increased in the outer peripheral portion of the wafer 200, and the heat radiation from the plate 46 can be reduced in the central portion of the wafer 200. Further, in the cooling of the wafer 200 in the film formation processing, the heat radiation from the plate 46 can be reduced in the outer peripheral portion of the wafer 200, and the heat radiation from the plate 46 can be increased in the central portion of the wafer 200. In this way, in the present variation, the same effects as the above-described mode can be obtained.

[0146] <Other Modes of the Present Disclosure>

[0147] The above describes the modes of the present disclosure in detail, but the present disclosure is not limited to the above-described modes, and various changes can be made without departing from the gist thereof.

[0148] In the above-described modes, an example in which the reaction tube has an inner tube and an outer tube is shown, but the present disclosure is not limited thereto, and the reaction tube can have a structure in which the inner tube is not provided and only the outer tube is provided.

[0149] Further, in the above-described modes, an example in which the lower chamber is disposed on the lower side of the reaction tube is shown, but the present disclosure is not limited thereto. For example, the reaction tube can be configured in a horizontal type, and the chamber (lower chamber) can be disposed beside the reaction tube. Further, even in a vertical type apparatus, the chamber (lower chamber) can be disposed on the upper portion of the reaction tube. That is, the chamber that forms the substrate transfer chamber can be disposed so as to be connected to the reaction tube, and is not limited to the above-described lower chamber.

[0150] Further, in the above-described manner, an example in which an SiO film is formed as a thin film using HCDS gas as a raw material gas and O2 gas as a reaction gas is described, but the present disclosure is not limited to this manner.

[0151] For example, as the reaction gas, in addition to the O-containing gas such as O2 gas, a nitrogen (N)-containing gas such as ammonia (NH3) gas, an N- and carbon (C)-containing gas such as triethylamine ((C2H5)3N, abbreviated as TEA) gas, a C-containing gas such as propylene (C3H6) gas, a boron (B)-containing gas such as trichloroborane (BC13) gas, and the like can be used. Also, a silicon nitride film (SiN film), a silicon oxynitride film (SiON) film, a silicon carbonitride film (SiCN film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon boron nitride film (SiBN film), a silicon boron carbonitride film (SiBCN film), and the like can be formed on the surface of the substrate by the gas supply sequence shown below. In these cases, effects similar to those in the above-described manner can be obtained. The processing procedure and processing conditions when these reaction gases are supplied can be the same as those when the reaction gas is supplied in the above-described manner. In these cases, effects similar to those in the above-described manner can be obtained.

[0152]

[0153]

[0154]

[0155]

[0156]

[0157]

[0158]

[0159]

[0160]

[0161]

[0162] Further, for example, the raw material and the reactant can be simultaneously supplied to the substrate to form the various films described above on the substrate. Further, for example, the raw material can be supplied to the substrate as a single body to form a silicon film (Si film) on the substrate. In these cases, the same effects as in the above-described mode can be obtained. The processing procedure and the processing conditions at the time of supplying the raw material and the reactant can be the same as those in the above-described mode. In these cases, the same effects as in the above-described mode can be obtained.

[0163] Further, for example, the present disclosure can be applied to a case where a metal thin film containing titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), or the like is formed. Even in these cases, the same effects as in the above-described mode can be obtained. That is, the present disclosure can be applied to a case where a film containing a prescribed element such as a semimetal element (semiconductor element), a metal element, or the like is formed.

[0164] Further, in the above-described mode, as the substrate processing procedure, a case where a thin film is formed on the surface of a substrate is mainly exemplified, but the present disclosure is not limited thereto. That is, the present disclosure can be applied not only to the thin film formation exemplified in the above-described mode but also to film formation processing other than the thin film formation exemplified in the above-described mode. Further, the details of the substrate processing are not limited, and the present disclosure can be applied not only to the film formation processing but also to a case where other substrate processing such as heat treatment (annealing treatment), plasma treatment, diffusion treatment, oxidation treatment, nitridation treatment, photolithography treatment, carrier activation after ion implantation, reflow treatment for planarization, or the like is performed.

[0165] Preferably, the recipes used for each processing are prepared separately in correspondence with the processing contents, and are stored in advance in the storage device 73 via the electric communication line or the external storage device 81. Further, at the start of each processing, the CPU 71 preferably selects an appropriate recipe from among the plurality of recipes stored in the storage device 73 in correspondence with the processing contents. Thus, various film types, composition ratios, film qualities, and film thicknesses can be formed with one substrate processing apparatus with good reproducibility. Further, the burden on the operator can be reduced, and the operator can be prevented from making a mistake, and each processing can be started quickly.

[0166] The recipe described above is not limited to a case where it is newly made, and for example, it can be prepared by changing an existing recipe already installed in the substrate processing apparatus. In the case of changing the recipe, the changed recipe can be installed in the substrate processing apparatus via the electric communication line or a recording medium on which the recipe is recorded. Further, the input / output device 82 possessed by the existing substrate processing apparatus can be operated to directly change the existing recipe already installed in the substrate processing apparatus.

[0167] In the above-described mode, an example in which a film is formed using a batch type substrate processing apparatus that processes a plurality of substrates at a time is described. The present disclosure is not limited to the above-described mode, and for example, can be appropriately applied to a case in which a film is formed using a single type substrate processing apparatus that processes one or a few substrates at a time. In the above-described mode, an example in which a film is formed using a substrate processing apparatus having a heat wall type processing furnace is described. The present disclosure is not limited to the above-described mode, and can be appropriately applied to a case in which a film is formed using a substrate processing apparatus having a cold wall type processing furnace.

[0168] In the above-described mode, an example in which a substrate is processed by heating by a resistance heating type heater is described. The present disclosure is not limited to this mode, and for example, heating in substrate processing can be performed by irradiation of ultraviolet light or the like. In a case in which heating based on ultraviolet light irradiation is performed, for example, a deuterium lamp, a helium lamp, a carbon arc lamp, a BRV light source, an excimer lamp, a mercury lamp, or the like can be used as a heating unit instead of the heater 10. In addition, these heating units can be used in combination with the heater. In this case, the central portion of the plate-shaped member (plate) can be formed of a material that more easily absorbs a wavelength irradiated from the lamp than a material that forms the outer peripheral portion.

[0169] In a case in which these substrate processing apparatuses are used, each processing can be performed with the same processing procedure and processing conditions as in the above-described mode, and the same effects as in the above-described mode can be obtained.

[0170] The above-described modes can be appropriately combined. At this time, the processing procedure and processing conditions can be set to be the same as those of the above-described mode, for example.

[0171] <Preferred Mode of the Present Disclosure>

[0172] Hereinafter, a preferred mode of the present disclosure will be described.

[0173] [Note 1]

[0174] According to one embodiment of the present disclosure,

[0175] A substrate processing apparatus is provided, including:

[0176] a processing chamber that performs processing on a substrate;

[0177] a substrate support that supports the substrate in the processing chamber,

[0178] a plate-shaped member is disposed on the substrate support along the substrate, the plate-shaped member having a different thickness in a central portion from an outer peripheral portion located outward of the central portion.

[0179] [Note 2]

[0180] The device according to any one of the above 1, preferably,

[0181] The thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion.

[0182] [Para 3]

[0183] The device according to any one of the above 1 or 2, preferably,

[0184] The central portion is a portion of the plate-shaped member that opposes the back surface of the substrate.

[0185] [Para 4]

[0186] The device according to any one of the above 1 to 3, preferably,

[0187] The plate-shaped member is disposed on the substrate support in such a manner that a surface of the plate-shaped member opposes a back surface of the substrate, and is parallel to a surface of the substrate.

[0188] [Para 5]

[0189] The device according to any one of the above 1 to 4, preferably,

[0190] The plate-shaped member is disposed on the substrate support in such a manner that a space opposing a surface of the substrate is larger than a space opposing a back surface of the substrate.

[0191] [Para 6]

[0192] The device according to any one of the above 1 to 5, preferably,

[0193] has: a gas nozzle that supplies a processing gas to a substrate in the processing chamber,

[0194] The substrate support supports a plurality of the substrates in a manner that the substrates are arranged at intervals in a vertical direction,

[0195] The plate-shaped member is disposed so that height positions of a plurality of gas supply holes provided in the gas nozzle are respectively located between a back surface of the outer peripheral portion of the plate-shaped member and a surface of the substrate.

[0196] [Para 7]

[0197] The device according to any one of the above 1 to 6, preferably,

[0198] The thickness of the plate-shaped member is thicker as it goes from the inside to the outside in the radial direction of the plate-shaped member.

[0199] [Para 8]

[0200] The device according to any one of the following notes 1 to 7, preferably,

[0201] The thickness of the outer peripheral portion of the plate-like member is thicker than the thickness of the central portion over the entire circumference in the circumferential direction.

[0202] [Note 9]

[0203] The device according to any one of the following notes 1 to 8, preferably,

[0204] The back surface of the outer peripheral portion of the plate-like member protrudes more than the back surface of the central portion.

[0205] [Note 10]

[0206] The device according to any one of the following notes 1 to 9, preferably,

[0207] The plate-like member is formed of a high-thermal-conductivity material.

[0208] [Note 11]

[0209] The device according to any one of the following notes 1 to 10, preferably,

[0210] The central portion and the outer peripheral portion of the plate-like member are formed of different materials.

[0211] [Note 12]

[0212] The device according to Note 11, preferably,

[0213] has a heating portion that heats the inside of the processing chamber,

[0214] The central portion of the plate-like member is formed of a material that is more easily absorbs heat from the heating portion than the material forming the outer peripheral portion.

[0215] [Note 13]

[0216] The device according to any one of the following notes 1 to 12, preferably,

[0217] The surface of the plate-like member is a surface on which surface treatment equal to the surface area of the back surface of the substrate is performed.

[0218] [Note 14]

[0219] The device according to any one of the following notes 1 to 13, preferably,

[0220] The substrate support supports a plurality of the substrates in a manner that the substrates are arranged at intervals in the vertical direction,

[0221] The thickness of the central portion of the plate-shaped member provided at the central portion of the substrate support portion is thinner than the thickness of the central portion of the plate-shaped member provided at the upper side or the lower side of the substrate support portion.

[0222] [Note 15]

[0223] The device according to any one of Notes 1 to 14 is preferably,

[0224] The substrate support member supports a plurality of the substrates in a manner that the substrates are arranged at intervals in the vertical direction,

[0225] The plate-shaped member provided at the central portion of the substrate support portion and the plate-shaped member provided at the upper side or the lower side of the substrate support portion are formed of different materials.

[0226] [Note 16]

[0227] The device according to any one of Notes 1 to 15 is preferably,

[0228] The outer peripheral portion and the central portion of the plate-shaped member are formed separately.

[0229] [Note 17]

[0230] According to other aspects of the present disclosure,

[0231] A substrate support member is provided, which supports a substrate in a processing chamber of a substrate processing device,

[0232] The substrate support member has a plate-shaped member whose thickness is different between a central portion and an outer peripheral portion located outward of the central portion,

[0233] The plate-shaped member is configured to be provided to the substrate support member along the substrate when the substrate is supported by the substrate support member.

[0234] [Note 18]

[0235] According to still other aspects of the present disclosure,

[0236] A method for manufacturing a semiconductor device or a substrate processing method is provided, which includes a step of performing a prescribed process on a substrate in a state where the substrate is supported by a substrate support member and a plate-shaped member whose thickness is different between a central portion and an outer peripheral portion located outward of the central portion is provided to the substrate support member along the substrate in a processing chamber of a substrate processing device.

[0237] [Note 19]

[0238] According to still other aspects of the present disclosure,

[0239] A program or a computer-readable recording medium recording the program is provided, which causes the substrate processing apparatus to execute the following process by a computer: performing a prescribed process on a substrate in a state where the substrate is supported to a substrate support and a plate-shaped member having a thickness different between a central portion and an outer peripheral portion located outward of the central portion is disposed along the substrate to the substrate support in a processing chamber of the substrate processing apparatus.

[0240] Explanation of Reference Numerals

[0241] 20…reaction tube, 23…processing chamber, 33…transfer chamber, 41…boat (substrate support), 46…plate-shaped member

Claims

1. A substrate processing apparatus characterized by comprising: Having: a processing chamber that performs processing for a substrate; a substrate support that supports the substrate in the processing chamber, a plate-shaped member is arranged on the substrate support along the substrate, the plate-shaped member has a different thickness at a central portion and an outer peripheral portion located outward of the central portion, and the central portion and the outer peripheral portion are formed of mutually different materials, the thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion, the central portion is formed of a material that more easily absorbs heat than the outer peripheral portion.

2. The substrate processing apparatus according to claim 1, wherein the central portion is a portion of the plate-shaped member that opposes the substrate.

3. The substrate processing apparatus according to claim 1, wherein the plate-shaped member is arranged on the substrate support in a manner such that a surface of the plate-shaped member opposes a back surface of the substrate and is parallel to a surface of the substrate.

4. The substrate processing apparatus according to claim 1, wherein the plate-shaped member is arranged on the substrate support in a manner such that a space opposing the surface of the substrate is larger than a space opposing the back surface of the substrate.

5. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a gas nozzle that supplies a processing gas to the substrate in the processing chamber, the substrate support supports a plurality of the substrates in a manner such that the substrates are arranged at intervals in a vertical direction, the plate-shaped member is arranged such that height positions of a plurality of gas supply holes provided in the gas nozzle are respectively located between a back surface of the outer peripheral portion of the plate-shaped member and a surface of the substrate.

6. The substrate processing apparatus according to claim 1, wherein the thickness of the plate-shaped member is thicker as it goes from a radially inner side of the plate-shaped member toward an outer side.

7. The substrate processing apparatus according to claim 1, wherein the thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion on an entire circumference in a circumferential direction.

8. The substrate processing apparatus according to claim 1, wherein a back surface of the outer peripheral portion of the plate-shaped member is more protruding than a back surface of the central portion.

9. The substrate processing apparatus according to claim 1, wherein the plate-shaped member is formed of a high-thermal-conductivity material.

10. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a heating portion that performs heating in the processing chamber, the central portion of the plate-shaped member is formed of a material that more easily absorbs heat from the heating portion than a material forming the outer peripheral portion.

11. The substrate processing apparatus according to claim 1, wherein a surface treatment is performed on a surface of the plate-shaped member such that the surface of the plate-shaped member is equal in surface area to a back surface of the substrate.

12. The substrate processing apparatus according to claim 1, wherein the substrate support supports a plurality of the substrates in a manner such that the substrates are arranged at intervals in a vertical direction, The thickness of the central portion of the plate-shaped member provided at the central portion of the substrate support is thinner than the thickness of the central portion of the plate-shaped member provided at the upper side or the lower side of the substrate support.

13. The substrate processing apparatus according to claim 1, wherein the substrate support supports a plurality of the substrates in a manner that the substrates are arranged at intervals in the vertical direction, the plate-shaped member provided at the central portion of the substrate support and the plate-shaped member provided at the upper side or the lower side of the substrate support are formed of different materials.

14. The substrate processing apparatus according to claim 1, wherein the outer peripheral portion and the central portion of the plate-shaped member are formed integrally.

15. A substrate support that supports a substrate in a processing chamber of a substrate processing apparatus, comprising: the plate-shaped member has a central portion and an outer peripheral portion located outward of the central portion, the thickness of the central portion is different from the thickness of the outer peripheral portion, and the central portion and the outer peripheral portion are formed of different materials, the plate-shaped member is arranged along the substrate on the substrate support when the substrate is supported by the substrate support, the thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion, the central portion is formed of a material that absorbs heat more easily than the outer peripheral portion.

16. A method of manufacturing a semiconductor device, characterized by having the steps of: in a processing chamber of a substrate processing apparatus, performing a predetermined process on a substrate in a state where the substrate is supported by a substrate support and a plate-shaped member is arranged along the substrate on the substrate support, the plate-shaped member has a central portion and an outer peripheral portion located outward of the central portion, the thickness of the central portion is different from the thickness of the outer peripheral portion, and the central portion and the outer peripheral portion are formed of different materials, the thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion, the central portion is formed of a material that absorbs heat more easily than the outer peripheral portion.

17. A computer-readable recording medium having a program recorded thereon, comprising: the program causes a substrate processing apparatus to perform the following process by a computer: in a processing chamber of a substrate processing apparatus, performing a predetermined process on a substrate in a state where the substrate is supported by a substrate support and a plate-shaped member is arranged along the substrate on the substrate support, the plate-shaped member has a central portion and an outer peripheral portion located outward of the central portion, the thickness of the central portion is different from the thickness of the outer peripheral portion, and the central portion and the outer peripheral portion are formed of different materials, the thickness of the outer peripheral portion of the plate-shaped member is thicker than the thickness of the central portion, the central portion is formed of a material that absorbs heat more easily than the outer peripheral portion.

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