Silicon carbide Schottky semiconductor device and manufacturing method thereof

Abstract

The present invention relates to a silicon carbide Schottky semiconductor device and a manufacturing method thereof, which comprises a first electron type semiconductor layer, a second electron type semiconductor layer, a first hole type semiconductor layer, a second hole type semiconductor layer, a first anode structure, a second anode structure and a cathode electrode layer. The first anode structure is arranged on the second electron type semiconductor, the second anode structure is arranged on the second hole type semiconductor layer, the doping concentration of the first electron type semiconductor layer is greater than the doping concentration of the second electron type semiconductor layer, and the doping concentration of the first hole type semiconductor layer is less than the doping concentration of the second hole type semiconductor layer. The silicon carbide Schottky semiconductor device and the manufacturing method thereof can solve the problem that the existing silicon carbide Schottky semiconductor device is difficult to increase the breakdown voltage while reducing the forward working voltage, thereby reducing the forward conduction loss of the silicon carbide Schottky semiconductor device and improving the working efficiency of the silicon carbide Schottky semiconductor device.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor device manufacturing, and in particular relates to a silicon carbide Schottky semiconductor device and a method for manufacturing the silicon carbide Schottky semiconductor device. Background Art

[0002] Power electronics technology has become one of the important supporting technologies of modern industrial society. Semiconductor technology, especially silicon carbide semiconductor devices, is widely used in various fields of industrial and agricultural production, transportation, national defense, aerospace, petroleum refining, nuclear industry and energy industry. With the development of industrial technology, improving efficiency has become an important development direction of semiconductor technology. Improving efficiency means that under the condition of obtaining the same output power and meeting the load requirements, the loss is lower, the heat is less, and the design pressure of the heat dissipation system is reduced. From the perspective of long-term energy consumption, it can reduce the consumption of electric energy and achieve the effect of energy saving and emission reduction.

[0003] At present, the measure to improve the efficiency of silicon carbide semiconductor devices, with silicon carbide Schottky semiconductor devices as a typical example, is to reduce the forward working voltage, and the main method of reducing the working voltage is to increase the doping concentration of the epitaxial layer (second electron type semiconductor layer) and reduce the thickness of the epitaxial layer (second electron type semiconductor layer). However, although increasing the doping concentration of the epitaxial layer (second electron type semiconductor layer) and reducing the thickness of the epitaxial layer (second electron type semiconductor layer) can quickly and effectively reduce the forward working voltage, it will also reduce the breakdown voltage, which has an adverse effect on the reverse working characteristics of the silicon carbide Schottky semiconductor device, affecting the further improvement of the working efficiency of the silicon carbide Schottky semiconductor device. Summary of the invention

[0004] The object of the present invention is to provide a silicon carbide Schottky semiconductor device and a method for manufacturing the same, so as to solve the problem that it is difficult to increase the breakdown voltage while reducing the forward operating voltage of the existing silicon carbide Schottky semiconductor device, thereby reducing the forward conduction loss of the silicon carbide Schottky semiconductor device and improving the working efficiency of the silicon carbide Schottky semiconductor device.

[0005] According to a first aspect of the present invention, a silicon carbide Schottky semiconductor device is provided, comprising a plurality of cellular structures, the cellular structures comprising: a first electron type semiconductor layer; a second electron type semiconductor layer, arranged on the upper surface of the first electron type semiconductor layer; a first hole type semiconductor layer, arranged on the upper surface of the first electron type semiconductor layer and adjacent to the second electron type semiconductor layer; a second hole type semiconductor layer, arranged on the upper surface of the first hole type semiconductor layer and adjacent to the second electron type semiconductor layer; an anode layer, comprising a first anode structure arranged on the second electron type semiconductor layer, and a second anode structure arranged on the second hole type semiconductor layer and separated from the first anode structure, wherein Schottky contacts are made between the first anode structure and the second electron type semiconductor layer, and between the second anode structure and the second hole type semiconductor layer; a cathode layer, arranged on the lower surface of the first electron type semiconductor layer and making ohmic contacts with the first electron type semiconductor layer; wherein the doping concentration of the first electron type semiconductor layer is greater than the doping concentration of the second electron type semiconductor layer, and the doping concentration of the first hole type semiconductor layer is less than the doping concentration of the second hole type semiconductor layer.

[0006] Furthermore, the doping concentration of the first hole-type semiconductor layer is 1e14-1e15cm -3 , and its thickness is 5-6μm.

[0007] Furthermore, the doping concentration of the second hole-type semiconductor layer is 1e19-1e21cm -3 , and its thickness is 0.8-1.1μm.

[0008] Furthermore, the doping concentration of the first electron-type semiconductor layer is 1e20-1e21cm -3 , and its thickness is 2-3μm.

[0009] Furthermore, the doping concentration of the second electron type semiconductor layer is 1e15-1e16cm -3 , and its thickness is 3-4μm.

[0010] Furthermore, a contact surface between the first hole-type semiconductor layer and the second hole-type semiconductor layer is arc-shaped.

[0011] Furthermore, the materials of the cathode electrode layer, the first anode structure and the second anode structure all include titanium, nickel and / or silver, the thickness of the cathode electrode layer is 4-5 μm, the thickness of the first anode structure is 4-5 μm, and the thickness of the second anode structure is 4-5 μm.

[0012] Furthermore, the first electron-type semiconductor layer and the second electron-type semiconductor layer are both formed of N-type silicon carbide semiconductor material, and the first hole-type semiconductor layer and the second hole-type semiconductor layer are both formed of P-type silicon carbide semiconductor material.

[0013] According to a second aspect of the present invention, a method for manufacturing a silicon carbide Schottky semiconductor device is provided, wherein the silicon carbide Schottky semiconductor device is the above-mentioned silicon carbide Schottky semiconductor device, and the manufacturing method comprises: step 1, preparing a first electron type semiconductor layer; step 2, preparing a second electron type semiconductor layer and a hole type semiconductor semi-finished layer connected to the side of the second electron type semiconductor layer on the upper surface of the first electron type semiconductor layer; step 3, converting the hole type semiconductor semi-finished layer into a first hole type semiconductor layer and a second hole type semiconductor layer arranged on the upper surface of the first hole type semiconductor layer; step 4, preparing a cathode electrode layer, a first anode structure and a second anode structure on the first electron type semiconductor layer, the second hole type semiconductor layer and the second electron type semiconductor layer, respectively.

[0014] Furthermore, in step 2, the second electron-type semiconductor layer and the hole-type semiconductor semi-finished layer are jointly formed by a stacked composite structure, and the manufacturing steps of each layer of the composite structure include: depositing a silicon carbide layer on the first electron-type semiconductor layer or the previous composite structure, and performing N-type doping on it, and depositing a buffer layer on the silicon carbide layer; depositing a barrier layer on the buffer layer; etching and P-doping the barrier layer, buffer layer and silicon carbide layer in turn to make the silicon carbide layer into the composite structure, and finally removing the buffer layer and barrier layer on the composite structure by etching.

[0015] The silicon carbide Schottky semiconductor device and the manufacturing method thereof provided by the present invention are equivalent to adding a first hole-type semiconductor layer to the prior art, and decomposing the structure of the anode electrode layer, thereby changing the wiring mode of the silicon carbide Schottky semiconductor device in the circuit. When the first anode structure is connected to a positive voltage and the cathode electrode layer is connected to a negative voltage, the silicon carbide Schottky semiconductor device is forward-conducted, and a PN junction is formed in the contact area between the second electron-type semiconductor layer and the first hole-type semiconductor layer and between the second electron-type semiconductor layer and the second hole-type semiconductor layer, thereby preventing electrons in the second electron-type semiconductor layer from entering the first and second hole-type semiconductor layers, and forcing the electrons to be evenly distributed in the second electron-type semiconductor layer, so that the resistance during forward conduction can be effectively reduced, the forward working voltage can be reduced, and the loss of forward conduction can be reduced, thereby improving the working efficiency. When the cathode electrode layer is connected to a positive voltage and the second anode structure is connected to a negative voltage, that is, when a bias voltage is applied to the silicon carbide Schottky semiconductor device, a reverse biased PN junction will be generated at the contact surface between the first hole-type semiconductor layer and the second hole-type semiconductor layer and the second electron-type semiconductor layer, and as the voltage increases, the PN junction depletion layer increases, and the free charges in the second electron-type semiconductor layer can be gradually depleted, so that the second electron-type semiconductor layer is close to the intrinsic semiconductor layer, and a very high lateral electric field is generated, thereby improving the withstand voltage level of the silicon carbide Schottky semiconductor device, that is, improving the breakdown voltage. In other words, the silicon carbide Schottky semiconductor device and its manufacturing method provided by the present invention can solve the problem that the existing silicon carbide Schottky semiconductor device is difficult to increase the breakdown voltage while reducing the forward working voltage, thereby reducing the forward conduction loss of the silicon carbide Schottky semiconductor device and improving the working efficiency of the silicon carbide Schottky semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the drawings:

[0017] Figure 1 Schematic diagram of the structure of a silicon carbide Schottky semiconductor device according to an embodiment of the present invention;

[0018] Figure 2a-2i A schematic diagram of the structural changes of a silicon carbide Schottky semiconductor device during the manufacturing process according to an embodiment of the present invention;

[0019] Figure 3 Schematic diagram of the structure of existing silicon carbide Schottky semiconductor devices Figure 1 ;

[0020] Figure 4 This is a second schematic diagram of the structure of an existing silicon carbide Schottky semiconductor device.

[0021] In the drawings, the same reference numerals are used for the same components. The drawings are not drawn to scale. DETAILED DESCRIPTION

[0022] The present invention will be further described below in conjunction with the accompanying drawings.

[0023] Figure 1 FIG. 1 is a schematic diagram of the structure of a silicon carbide Schottky semiconductor device according to an embodiment of the present invention. Figure 1 As shown, the present invention provides a silicon carbide Schottky semiconductor device 100, which includes a plurality of cellular structures. The cellular structure includes a first electron type semiconductor layer 1, a second electron type semiconductor layer 2, a first hole type semiconductor layer 3, a second hole type semiconductor layer 4, an anode electrode layer and a cathode electrode layer 6. The second electron type semiconductor layer 2 is arranged on the upper surface of the first electron type semiconductor layer 1. The first hole type semiconductor layer 3 is arranged on the upper surface of the first electron type semiconductor layer 1 and is adjacent to the second electron type semiconductor layer 2. The second hole type semiconductor layer 4 is arranged on the upper surface of the first hole type semiconductor layer 3 and is adjacent to the second electron type semiconductor layer 2. The anode electrode layer includes a first anode structure 51 and a second anode structure 52, the first anode structure 51 is separated from the second anode structure 52, the first anode structure 51 is arranged on the second electron type semiconductor layer 2 and is in Schottky contact with the second electron type semiconductor layer 2, and the second anode structure 52 is arranged on the second hole type semiconductor layer 4 and is in Schottky contact between the second hole type semiconductor layer 4. The cathode electrode layer 6 is disposed on the lower surface of the first electron type semiconductor layer 1 and makes ohmic contact with the first electron type semiconductor layer 1. The doping concentration of the first electron type semiconductor layer 1 is greater than the doping concentration of the second electron type semiconductor layer 2, and the doping concentration of the first hole type semiconductor layer 3 is less than the doping concentration of the second hole type semiconductor layer 4.

[0024] like Figure 2a to Figure 2i As shown, the manufacturing method of the silicon carbide Schottky semiconductor device 100 includes: step 1, preparing a first electronic type semiconductor layer 1 (see Figure 2a ); Step 2, preparing a second electron type semiconductor layer 2 and a hole type semiconductor semi-finished layer 7 connected to the side of the second electron type semiconductor layer 2 on the upper surface of the first electron type semiconductor layer 1 (see Figure 2g ); Step 3, the hole-type semiconductor semi-finished product layer 7 is transformed into a first hole-type semiconductor layer 3 and a second hole-type semiconductor layer 4 provided on the upper surface of the first hole-type semiconductor layer 3 (see Figure 2h ); Step 4, respectively prepare a cathode layer 6, a first anode structure 51 and a second anode structure 52 on the first electron type semiconductor layer 1, the second hole type semiconductor layer 4 and the second electron type semiconductor layer 2 (see Figure 2i ).

[0025] like Figure 2a-2gAs shown, in step 2, the second electron-type semiconductor layer 2 and the hole-type semiconductor semi-finished product layer 7 are jointly formed by a stacked composite structure 7a, and the manufacturing steps of each composite structure 7a include: step 2.1, depositing a silicon carbide layer 7b on the first electron-type semiconductor layer 1 or the previous composite structure 7a, and performing N-type doping on it; step 2.2, depositing a buffer layer 8 (also known as an oxide layer) on the silicon carbide layer 7b; step 2.3, depositing a barrier layer 9 (for example, a polysilicon layer) on the buffer layer 8; step 2.4, etching and P-doping the barrier layer 9, the buffer layer 8 and the silicon carbide layer 7b in sequence to make the silicon carbide layer 7b into a composite structure 7a, and finally removing the buffer layer 8 and the barrier layer 9 on the composite structure by etching. The barrier layer 9, the buffer layer 8, the deposition, the N-type doping, the P-type doping and the etching involved in each step are all well known to those skilled in the art, so they will not be repeated here.

[0026] The silicon carbide Schottky semiconductor device 100 and its manufacturing method of this embodiment are equivalent to adding a first hole-type semiconductor layer 3 to the prior art, and decomposing the structure of the anode electrode layer, thereby changing the wiring mode of the silicon carbide Schottky semiconductor device 100 in the circuit. When the first anode structure 51 is connected to a positive voltage and the cathode electrode layer 6 is connected to a negative voltage, the silicon carbide Schottky semiconductor device 100 is forward-conducted, and a PN junction is formed in the contact area between the second electron-type semiconductor layer 2 and the first hole-type semiconductor layer 3 and between the second electron-type semiconductor layer 2 and the second hole-type semiconductor layer 4, preventing the electrons in the second electron-type semiconductor layer 2 from entering the first and second hole-type semiconductor layers 3 and 4, and forcing the electrons to be evenly distributed in the second electron-type semiconductor layer 2, so that the resistance during forward conduction can be reduced, the forward working voltage can be reduced, and the loss of forward conduction can be reduced, thereby improving the working efficiency. When the cathode electrode layer 6 is connected to a positive voltage and the second anode structure 52 is connected to a negative voltage, that is, when a bias voltage is applied to the silicon carbide Schottky semiconductor device 100, a reverse biased PN junction will be generated at the contact surface of the first hole-type semiconductor layer 3 and the second hole-type semiconductor layer 4 with the second electron-type semiconductor layer 2, and as the voltage increases, the PN junction depletion layer increases, and the free charges in the second electron-type semiconductor layer 2 can be gradually depleted, so that the second electron-type semiconductor layer 2 is close to the intrinsic semiconductor layer, and a very high lateral electric field is generated, thereby improving the withstand voltage level of the silicon carbide Schottky semiconductor device 100, that is, improving the breakdown voltage. Therefore, the silicon carbide Schottky semiconductor device 100 and the manufacturing method thereof provided by the present invention can solve the problem that the existing silicon carbide Schottky semiconductor device is difficult to reduce the forward working voltage and improve the breakdown voltage at the same time, thereby reducing the loss of the silicon carbide Schottky semiconductor device in the forward conduction and improving the working efficiency of the silicon carbide Schottky semiconductor device. The silicon carbide Schottky semiconductor device 100 has a simple structure, is easy to assemble, is safe and reliable to use, and is easy to implement and promote.

[0027] In this embodiment, the doping concentration of the first hole-type semiconductor layer 3 is 1e14-1e15 cm -3 The thickness is 5-6 μm. The doping concentration of the second hole-type semiconductor layer 4 is 1e19-1e21 cm -3 The thickness is 0.8-1.1 μm. The doping concentration of the first electron type semiconductor layer 1 is 1e20-1e21 cm -3 The thickness is 2-3 μm. The doping concentration of the second electron type semiconductor layer 2 is 1e15-1e16 cm -3 , and its thickness is 3-4μm. Among them, the contact surface between the first hole-type semiconductor layer 3 and the second hole-type semiconductor layer 4 is preferably arc-shaped. The first electron-type semiconductor layer 1 and the second electron-type semiconductor layer 2 are both formed of N-type silicon carbide semiconductor material, and the first hole-type semiconductor layer 3 and the second hole-type semiconductor layer 4 are both formed of P-type silicon carbide semiconductor material, because silicon carbide semiconductor material has the advantages of large bandgap width, high breakdown field strength, high saturated electron drift velocity and high thermal conductivity.

[0028] In this embodiment, the materials of the cathode electrode layer 6, the first anode structure 51 and the second anode structure 52 all include titanium, nickel and / or silver, the thickness of the cathode electrode layer 6 is 4-5 μm, the thickness of the first anode structure 51 is 4-5 μm, and the thickness of the second anode structure 52 is 4-5 μm, wherein the cathode electrode layer 6, the first anode structure 51 and the second anode structure 52 are all prepared by magnetron sputtering process, and the cathode electrode layer 6 is annealed at 800-1000°C to achieve ohmic contact, and the first anode structure 51 and the second anode structure 52 are annealed at 400-600°C to achieve Schottky contact. In a preferred embodiment, the materials of the cathode electrode layer 6, the first anode structure 51 and the second anode structure 52 are nickel-silver alloy with low cost and good performance.

[0029] Next, the performance of the silicon carbide Schottky semiconductor devices prepared in the aforementioned embodiment (referred to as embodiment 1) and the comparative example was tested.

[0030] Experimental equipment: Keysight 1505A is used for the performance test of silicon carbide Schottky semiconductor devices.

[0031] The silicon carbide Schottky semiconductor device 100 of Example 1 includes a 2μm thick first electron type semiconductor layer 1, a 3.5μm thick second electron type semiconductor layer 2, a 5um thick first hole type semiconductor layer 3, a 0.8um thick second hole type semiconductor layer 4, a 1μm thick anode electrode layer (including a 1μm thick first anode structure 51 and a 1μm thick second anode structure 52) and a 1μm thick cathode electrode layer 6.

[0032] like Figure 3As shown, the silicon carbide Schottky semiconductor device 200 of Comparative Example 1 includes a 2 μm thick first electron type semiconductor layer 1a, a 3.5 μm thick second electron type semiconductor layer 2a, a 5 μm thick first hole type semiconductor layer 3a, a 0.8 μm thick second hole type semiconductor layer 4a, a 1 μm thick anode electrode layer 5a, and a 1 μm thick cathode electrode layer 6a. The difference between Comparative Example 1 and Example 1 is that the anode electrode layer 5a of Comparative Example 1 is an integrated structure.

[0033] like Figure 4 As shown, the silicon carbide Schottky semiconductor device 300 of Comparative Example 2 includes a 2 μm thick first electron type semiconductor layer 1b, a 5 μm thick second electron type semiconductor layer 2b, a 0.8 μm thick second hole type semiconductor layer 4b, a 1 μm thick anode electrode layer 5b, and a 1 μm thick cathode electrode layer 6b. The difference between Comparative Example 2 and Example 1 is that the anode electrode layer 5b of Comparative Example 2 is an integrated structure, the thickness of the second electron type semiconductor layer 2b is 5 μm, and Comparative Example 2 does not have a first hole type semiconductor layer.

[0034] The test results are shown in Table 1:

[0035] Semiconductor device number Forward resistance / R Forward operating voltage / VF Breakdown voltage / BV Example 1 0.14 1.4 650 Comparative Example 1 0.14 1.4 300 Comparative Example 2 0.2 2 500

[0036] It can be seen from this that the silicon carbide Schottky semiconductor device 100 of the embodiment of the present invention is equivalent to adding a first hole-type semiconductor layer 3 to the prior art and decomposing the structure of the anode electrode layer, which can not only effectively increase its breakdown voltage while reducing the forward operating voltage of the silicon carbide Schottky semiconductor device 100, but also effectively reduce the overall thickness of the silicon carbide Schottky semiconductor device 100, thereby promoting the development of semiconductor devices towards thinner directions, and making them suitable for thinner changes in electronic products.

[0037] In summary, the silicon carbide Schottky semiconductor device 100 and its manufacturing method of the embodiment of the present invention can solve the problem that the existing silicon carbide Schottky semiconductor device is difficult to increase the breakdown voltage while reducing the forward operating voltage, thereby reducing the forward conduction loss of the silicon carbide Schottky semiconductor device and improving the working efficiency of the silicon carbide Schottky semiconductor device.

[0038] In the description of the present application, it should be understood that the terms "thickness", "upper" and "lower" etc. indicating orientation or positional relationships are based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0039] In addition, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present invention, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0040] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] The above is only a preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician in the field can easily make changes or variations within the technical scope disclosed in the present invention, and such changes or variations should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims. As long as there is no structural conflict, the various technical features mentioned in each embodiment can be combined in any way. The present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A silicon carbide Schottky semiconductor device, characterized in that: A plurality of cellular structures are included, wherein the cellular structure includes: a first electron type semiconductor layer; A second electron type semiconductor layer is disposed on the upper surface of the first electron type semiconductor layer; a first hole-type semiconductor layer, disposed on an upper surface of the first electron-type semiconductor layer and adjacent to the second electron-type semiconductor layer; a second hole-type semiconductor layer, disposed on an upper surface of the first hole-type semiconductor layer and adjacent to the second electron-type semiconductor layer; an anode layer, comprising a first anode structure disposed on the second electron-type semiconductor layer, and a second anode structure disposed on the second hole-type semiconductor layer and separated from the first anode structure, wherein Schottky contacts are made between the first anode structure and the second electron-type semiconductor layer, and between the second anode structure and the second hole-type semiconductor layer; A cathode electrode layer is disposed on the lower surface of the first electron type semiconductor layer and is in ohmic contact with the first electron type semiconductor layer; The doping concentration of the first electron type semiconductor layer is greater than the doping concentration of the second electron type semiconductor layer, and the doping concentration of the first hole type semiconductor layer is less than the doping concentration of the second hole type semiconductor layer.

2. The silicon carbide Schottky semiconductor device according to claim 1, characterized in that: The doping concentration of the first hole-type semiconductor layer is 1e14-1e15cm -3 , and its thickness is 5-6μm.

3. The silicon carbide Schottky semiconductor device according to claim 1, characterized in that: The doping concentration of the second hole-type semiconductor layer is 1e19-1e21cm -3 , and its thickness is 0.8-1.1μm.

4. The silicon carbide Schottky semiconductor device according to claim 1, characterized in that: The doping concentration of the first electron type semiconductor layer is 1e20-1e21cm -3 , and its thickness is 2-3μm.

5. The silicon carbide Schottky semiconductor device according to claim 1, characterized in that: The doping concentration of the second electron type semiconductor layer is 1e15-1e16cm -3 , and its thickness is 3-4μm.

6. The silicon carbide Schottky semiconductor device according to any one of claims 1 to 5, characterized in that: A contact surface between the first hole-type semiconductor layer and the second hole-type semiconductor layer is arc-shaped.

7. The silicon carbide Schottky semiconductor device according to any one of claims 1 to 5, characterized in that: The materials of the cathode electrode layer, the first anode structure and the second anode structure all include titanium, nickel and / or silver. The thickness of the cathode electrode layer is 4-5 μm, the thickness of the first anode structure is 4-5 μm, and the thickness of the second anode structure is 4-5 μm.

8. The silicon carbide Schottky semiconductor device according to any one of claims 1 to 5, characterized in that: The first electron-type semiconductor layer and the second electron-type semiconductor layer are both formed of N-type silicon carbide semiconductor material, and the first hole-type semiconductor layer and the second hole-type semiconductor layer are both formed of P-type silicon carbide semiconductor material.

9. A method for manufacturing a silicon carbide Schottky semiconductor device, wherein the silicon carbide Schottky semiconductor device is the silicon carbide Schottky semiconductor device according to any one of claims 1 to 8, characterized in that: The manufacturing method comprises: Step 1, preparing a first electron type semiconductor layer; Step 2, preparing a second electron type semiconductor layer and a hole type semiconductor semi-finished layer connected to the side of the second electron type semiconductor layer on the upper surface of the first electron type semiconductor layer; Step 3, transforming the hole-type semiconductor semi-finished product layer into a first hole-type semiconductor layer and a second hole-type semiconductor layer disposed on the upper surface of the first hole-type semiconductor layer; Step 4: prepare a cathode electrode layer, a first anode structure and a second anode structure on the first electron type semiconductor layer, the second hole type semiconductor layer and the second electron type semiconductor layer respectively.

10. The manufacturing method according to claim 9, characterized in that: In step 2, the second electron-type semiconductor layer and the hole-type semiconductor semi-finished product layer are jointly formed by a stacked composite structure, and the manufacturing steps of each layer of the composite structure include: Depositing a silicon carbide layer on the first electron-type semiconductor layer or the previous composite structure and performing N-type doping on the silicon carbide layer. depositing a buffer layer on the silicon carbide layer; depositing a barrier layer on the buffer layer; The barrier layer, the buffer layer and the silicon carbide layer are sequentially etched and P-type doped to form the silicon carbide layer into the composite structure, and finally the buffer layer and the barrier layer on the composite structure are removed by etching.

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