Tantalum capacitor and method for manufacturing the same

Abstract

The present disclosure provides a tantalum capacitor and a manufacturing method thereof. The tantalum capacitor includes: a first surface and a second surface facing a first direction, a third surface and a fourth surface facing a second direction, and a fifth surface and a sixth surface facing a third direction; a tantalum body having a surface, and a tantalum wire extending from the surface in the first direction; and a substrate on which the tantalum body is mounted, wherein the substrate may be an organic-inorganic composite substrate.

Description

[0001] This application claims the benefit of priority of Korean Patent Application No. 10-2020-0122725, filed on Sep. 23, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a tantalum capacitor and a method of manufacturing the same. Background Art

[0003] Tantalum (Ta) material is a metal having mechanical or physical properties such as a high melting point, excellent ductility, and excellent corrosion resistance, and is widely used in various fields of the entire industry such as the electrical, electronic, mechanical, chemical, aerospace, and defense industries. Since tantalum material can form a stable anodic oxide film, tantalum has been widely used as a material for forming a positive electrode for small capacitors. Recently, with the rapid development of the information technology (IT) industry such as electronic information and communication technology (ICT) and electronic technology, the use of tantalum has been increasing year by year.

[0004] To connect the tantalum material and the electrode, a conventional tantalum capacitor uses a structure in which terminals are led to the outside using a structure having an internal lead frame or a structure without an internal lead frame.

[0005] In this case, the electrodes of a tantalum capacitor that does not use a conventional frame are led to the outside in such a manner that the tantalum body and the positive electrode wire are respectively connected to the lower electrode and led to the lower electrode. In a conventional lower electrode structure, a structure has been used that uses a connection portion connecting the positive electrode wire and the tantalum wire and a via hole connecting an external terminal. However, the connection through the via hole has the following problems: due to a limited contact area, the equivalent series resistance (ESR) characteristics may deteriorate, and since a spacer for placing the via hole inside the substrate is required, it may be difficult to reduce the thickness of the substrate. Therefore, there may be a problem that the capacitance of the tantalum capacitor may be limited.

[0006] The information disclosed in the above background art section is for helping to understand the background art of the present disclosure, and should not be regarded as admitting that the information forms any part of the prior art. Summary of the Invention

[0007] One aspect of the present disclosure is to provide a tantalum capacitor having a reduced equivalent series resistance (ESR).

[0008] One aspect of the present disclosure is to provide a tantalum capacitor having a high capacitance.

[0009] One of various objects of the present disclosure is to improve productivity by improving process efficiency.

[0010] One aspect of the present disclosure is to provide a tantalum capacitor having excellent reliability by improving mechanical strength.

[0011] According to one aspect of the present disclosure, a tantalum capacitor includes: a first surface and a second surface facing a first direction, a third surface and a fourth surface facing a second direction, and a fifth surface and a sixth surface facing a third direction; a tantalum body having a surface from which a tantalum wire extends in the first direction; and a substrate on which the tantalum body is mounted in the third direction, wherein the substrate may be an organic-inorganic composite substrate.

[0012] According to another aspect of the present disclosure, a method for manufacturing a tantalum capacitor includes the following operations: etching the first resist layer in a base film in which a carrier film, a base metal layer, and the first resist layer are sequentially stacked; and forming a first plating layer on the etched portion of the base film.

[0013] According to another aspect of the present disclosure, a method for manufacturing a tantalum capacitor includes the following operations: forming and etching a first resist layer on a base film, wherein a carrier film, a base metal layer, and a first metal layer are sequentially stacked in the base film; and etching the first metal layer exposed to the etched portion of the first resist layer.

[0014] According to another aspect of the present disclosure, a tantalum capacitor includes: a tantalum body having a surface from which a tantalum wire extends in a first direction; and a substrate on which the tantalum body is mounted in a second direction, wherein the substrate includes a first resist layer and a second resist layer, and a first through hole and a second through hole, the first resist layer and the second resist layer are stacked on each other in the second direction, the first through hole passes through the first resist layer and the second resist layer in the second direction, the second through hole passes through the first resist layer and the second resist layer in the second direction, and two layers of positive electrodes are disposed in the first through hole, and two layers of negative electrodes are disposed in the second through hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other aspects, features, and advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0016] Figure 1 is a perspective view showing a tantalum capacitor according to an embodiment of the present disclosure;

[0017] Figure 2 is Figure 1 a bottom view of the tantalum capacitor viewed from the direction of the sixth surface S6;

[0018] Figure 3is a schematic exploded perspective view of a Figure 1 substrate;

[0019] Figures 4A to 4C is a cross-sectional view showing a variant form of a tantalum capacitor according to an embodiment of the present disclosure;

[0020] Figure 5 is a perspective view showing a tantalum capacitor according to another embodiment of the present disclosure;

[0021] Figure 6 is Figure 5 a bottom view of the tantalum capacitor viewed from the direction of the sixth surface S6;

[0022] Figures 7A to 7C is a cross-sectional view showing a variant form of a tantalum capacitor according to an embodiment of the present disclosure;

[0023] Figures 8A to 8J is a view showing a manufacturing method of a tantalum capacitor according to an embodiment of the present disclosure; and

[0024] Figures 9A to 9O is a view showing a manufacturing method of a tantalum capacitor according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present disclosure will be described as follows with reference to the accompanying drawings. It is not intended to limit the technology described herein to specific embodiments, and it should be understood to include various variations, equivalents, and / or alternatives of the embodiments of the present disclosure. In the description with reference to the accompanying drawings, like reference numerals may be used for like components.

[0026] In the drawings, for clear description, parts irrelevant to the description may be omitted, and the thickness of elements may be exaggerated to clearly show layers and regions. The same reference numerals may be used to describe components having the same function within the scope of the same concept.

[0027] In this specification, expressions such as "have", "may have", "include", or "may include" may indicate the presence of corresponding features (e.g., numerical values, functions, operations, components, etc.), and may not exclude the presence of additional features.

[0028] In this specification, expressions such as "A or B", "at least one of A and B", or "one or more of A and B" may include all possible combinations of the items listed together. For example, "at least one of A and B" may refer to all cases including (1) at least one A, (2) at least one B, and (3) both at least one A and at least one B.

[0029] In the drawings, the X direction may be defined as the first direction, the L direction, or the length direction, the Y direction may be defined as the second direction, the W direction, or the width direction, and the Z direction may be defined as the third direction, the T direction, or the thickness direction.

[0030] Figure 1 is a schematic perspective view of a tantalum capacitor according to an embodiment of the present disclosure, Figure 2 is a bottom view of the tantalum capacitor, and Figure 3 schematically shows Figure 1 an exploded perspective view of the substrate of.

[0031] Referring to Figures 1 to 3 , a tantalum capacitor 100 according to an embodiment of the present disclosure may include: a tantalum body 110, a tantalum wire 120 exposed from one surface of the tantalum body 110; and a substrate 130, on which the tantalum body 110 is mounted. The substrate 130 may be an organic-inorganic composite substrate. In the present specification, the term "organic-inorganic composite substrate" may refer to a substrate in which an organic material and an inorganic material are mixed, the organic material may refer to a material containing hydrocarbons, and the inorganic material may refer to components other than the organic material. The tantalum capacitor according to the present disclosure may improve the strength of the substrate by using an organic-inorganic composite substrate, and may reduce the thickness of the substrate, thereby achieving low resistance and / or high capacitance characteristics.

[0032] The tantalum capacitor 100 according to the present disclosure may include a first surface S1 and a second surface S2 (a first end surface and a second end surface) facing the first direction (X direction), a third surface S3 and a fourth surface S4 facing the second direction (Y direction), and a fifth surface S5 and a sixth surface S6 facing the third direction (Z direction). Referring to Figure 1 and Figure 2 , the tantalum capacitor 100 according to the present disclosure may have a structure in which the substrate 130 is exposed to the sixth surface S6.

[0033] According to an embodiment of the present disclosure, the tantalum capacitor 100 according to the present disclosure may include a tantalum body 110, and a tantalum wire 120 is exposed from the tantalum body 110. The tantalum body 110 may be formed using a tantalum material. The method of manufacturing the tantalum body 110 is not particularly limited. However, for example, tantalum (Ta) powder and a binder are mixed and stirred in a certain ratio, the mixed powder is compressed and formed into a substantially rectangular parallelepiped, and then sintered at high temperature and high vacuum to manufacture the tantalum body 110.

[0034] In addition, the tantalum body 110 may have tantalum wires 120 exposed in the X direction of the tantalum body 110. The tantalum wires 120 can be installed by inserting the tantalum wires 120 into the mixture of tantalum powder and binder and offsetting them from the center before compressing the powder in which the tantalum powder and the binder are mixed. That is, the tantalum body 110 can insert and install the tantalum wires 120 in the tantalum powder mixed with the binder to form a tantalum element having a desired size, and then sinter the tantalum element in an atmosphere of high temperature and high vacuum (10 -5 Torr or lower) for about 30 minutes to fabricate the tantalum body 110.

[0035] A solid electrolyte layer (not shown) may be provided on the surface of the tantalum body 110 for cathodization. The solid electrolyte layer may include one or more of a conductive polymer and manganese dioxide (MnO2). When the solid electrolyte layer is formed using a conductive polymer, it can be formed on the surface of the tantalum body 110 by a chemical polymerization method or an electrolytic polymerization method. The material of the conductive polymer is not particularly limited as long as it is a conductive polymer material having conductivity, and may include, for example, polypyrrole, polythiophene, polyacetylene, and / or polyaniline. When the solid electrolyte layer is formed using manganese dioxide (MnO2), the tantalum body can be immersed in a manganese aqueous solution such as manganese nitrate, and then the manganese aqueous solution is thermally decomposed to form conductive manganese dioxide on the surface of the tantalum body 110.

[0036] As needed, a negative electrode reinforcing layer (not shown) may be additionally provided on the surface of the solid electrolyte layer of the tantalum body 110. The negative electrode reinforcing layer may be a layer in which a carbon layer and a silver (Ag) layer are stacked. The carbon layer is used to reduce the contact resistance of the surface of the tantalum body 110, and the silver (Ag) layer is a material having high conductivity and is generally used to form a conductive layer in the art, but the present disclosure is not necessarily limited thereto.

[0037] According to an embodiment of the present disclosure, the substrate 130 of the tantalum capacitor 100 may have a two-layer structure including a first layer (or a first resist layer) 131 and a second layer (or a second resist layer) 132. The first layer 131 includes a substrate mounting surface, and the tantalum body 110 is mounted on the second layer 132.

[0038] Figure 3 is an exploded perspective view showing the substrate 130 of the tantalum capacitor 100 according to the present example. Referring to Figure 3 , the substrate 130 of the tantalum capacitor 100 of the present embodiment may include a first layer 131 and a second layer 132, and the first layer 131 and the second layer 132 may be stacked in a third direction (Z direction). The first layer 131 of the substrate 130 may include a substrate mounting surface, and the tantalum capacitor 100 according to the present disclosure is mounted through the substrate mounting surface.

[0039] The substrate mounting surface can be the sixth surface S6 of the tantalum capacitor 100 according to the present disclosure. The second layer 132 of the substrate 130 can have a surface opposite to the substrate mounting surface of the first layer 131, and the first layer 131 and the second layer 132 can be arranged to contact each other in the stacking direction (Z direction). In this case, the tantalum body 110 can be mounted on the surface of the second layer 132 opposite to the surface that contacts the first layer 131 in the third direction (Z direction). The contact between the first layer 131 and the second layer 132 can be visually confirmed by a scanning electron microscope (SEM) or the like.

[0040] In one example, the substrate 130 of the tantalum capacitor 100 according to the present disclosure can include a positive electrode connection portion 141 connected to the tantalum wire 120, a negative electrode connection portion 142 connected to the tantalum body 110, a positive terminal 143 connected to the positive electrode connection portion 141, and a negative terminal 144 connected to the negative electrode connection portion 142.

[0041] In one example, the substrate 130 can include a first resist layer 131 and a second resist layer 132, as well as a first through hole and a second through hole. The first resist layer 131 and the second resist layer 132 are stacked on each other in the third direction (Z direction). The first through hole passes through the first resist layer 131 and the second resist layer 132 in the third direction (Z direction), and the second through hole passes through the first resist layer 131 and the second resist layer 132 in the third direction (Z direction). The positive electrode connection portion 141 and the positive terminal 143 can be disposed in the first through hole, and the negative electrode connection portion 142 and the negative terminal 144 can be disposed in the second through hole.

[0042] Referring to Figure 1 and Figure 3 , the positive electrode connection portion 141 and the negative electrode connection portion 142 can be disposed on the second layer 132 of the substrate 130, and the positive terminal 143 and the negative terminal 144 can be disposed on the first layer 131 of the substrate 130. The positive terminal 143 disposed on the first layer 131 of the substrate 130 can be connected to the tantalum wire 120 through the positive electrode connection portion 141, and the negative terminal 144 disposed on the first layer 131 of the substrate 130 can be connected to the tantalum body 110 through the negative electrode connection portion 142. In addition, the positive terminal 143 is connected to the positive electrode connection portion 141 and exposed to the sixth surface S6; and the negative terminal 144 is connected to the negative electrode connection portion 142 and exposed to the sixth surface S6.

[0043] In one example, the lower surface of the positive electrode connection portion 141 and the upper surface of the positive terminal 143 of the substrate 130 of the tantalum capacitor 100 according to the present disclosure can be arranged to contact each other, and the lower surface of the negative electrode connection portion 142 and the upper surface of the negative terminal 144 can be arranged to contact each other.

[0044] Reference Figure 3 , the upper surface of the positive terminal 143 provided on the first layer 131 of the substrate 130 and the lower surface of the positive electrode connection portion 141 provided on the second layer 132 of the substrate 130 may be set to contact each other, which may mean that one surface of the positive terminal 143 in the third direction (Z direction) is set to contact one surface of the positive electrode connection portion 141 in the third direction (Z direction). In addition, the upper surface of the negative terminal 144 provided on the first layer 131 of the substrate 130 and the lower surface of the negative electrode connection portion 142 provided on the second layer 132 of the substrate 130 may be set to contact each other, which may mean that one surface of the negative terminal 144 in the third direction (Z direction) is set to contact one surface of the negative electrode connection portion 142 in the third direction (Z direction).

[0045] In a conventional frameless structure, the positive electrode connection portion and the positive terminal are connected through vias, and the negative electrode connection portion and the negative terminal are also connected through vias. However, the tantalum capacitor 100 according to the present disclosure may have a structure in which the positive terminal 143 and the positive electrode connection portion 141 and / or the negative terminal 144 and the negative electrode connection portion 142 are connected face to face, so that a low equivalent series resistance (ESR) can be achieved. In addition, since there is no need to provide space for vias, the thickness of the substrate can be reduced by the height of the vias, thereby maximizing the capacitance of the tantalum body within the same device size, and thus realizing a high-capacitance tantalum capacitor.

[0046] In an example of the present disclosure, the positive electrode connection portion 141 and the negative electrode connection portion 142 of the tantalum capacitor 100 according to the present disclosure may respectively have a length and / or a width greater than the thickness.

[0047] Reference Figure 3 , the length and / or width of the positive electrode connection portion 141 and the negative electrode connection portion 142 of the tantalum capacitor 100 according to the present disclosure are greater than the thickness, which may refer to a structure in which the length of the positive electrode connection portion 141 and the negative electrode connection portion 142 in the first direction (X direction) is greater than the thickness in the third direction (Z direction) and / or a structure in which the width of the positive electrode connection portion 141 and the negative electrode connection portion 142 in the second direction (Y direction) is greater than the thickness in the third direction (Z direction). Since the positive electrode connection portion 141 and the negative electrode connection portion 142 may have a structure in which the length and / or width are greater than the thickness, the contact area with the positive terminal 143 and the negative terminal 144 can be increased, thereby effectively reducing the resistance.

[0048] In another example of the present disclosure, the positive terminal 143 and the negative terminal 144 of the tantalum capacitor 100 according to the present disclosure may respectively have a length and / or a width greater than the thickness. Reference Figure 3, for the tantalum capacitor 100 according to the present disclosure, the lengths and / or widths of the positive terminal 143 and the negative terminal 144 are greater than the thickness. This may refer to a structure in which the length of the positive terminal 143 and the negative terminal 144 in the first direction (X direction) is greater than the thickness in the third direction (Z direction) and / or a structure in which the width of the positive terminal 143 and the negative terminal 144 in the second direction (Y direction) is greater than the thickness in the third direction (Z direction). Since the positive terminal 143 and the negative terminal 144 may have a structure in which the length and / or width is greater than the thickness, the contact area with the positive electrode connection portion 141 and the negative electrode connection portion 142 can be increased, thereby effectively reducing the resistance.

[0049] According to an embodiment of the present disclosure, the tantalum capacitor 100 of the present disclosure may further include a positive electrode bonding portion 145 provided on the substrate 130. In this case, the positive electrode bonding portion 145 may be connected to the positive electrode connection portion 141 and the tantalum wire 120. Referring to Figure 1 , the positive electrode bonding portion 145 may be provided on the positive electrode connection portion 141 in the third direction (Z direction) to be connected to the tantalum wire 120.

[0050] The lower surface of the positive electrode connection portion 141 and the upper surface of the positive terminal 143 of the tantalum capacitor according to the present disclosure may be provided to be in contact with each other. In this case, the positive electrode connection portion 141 and the positive terminal 143 may have different sizes from each other, and the positive electrode connection portion 141 may be provided to be offset in any one direction of the first direction (X direction).

[0051] Figures 4A to 4C A modified form of the arrangement of the positive electrode connection portion 141 and the positive terminal 143 is shown. Referring to Figures 4A to 4C , the positive electrode connection portion 141 and the positive terminal 143 of the tantalum capacitor 100 according to the present disclosure may have substantially the same length ( Figure 4A ) or different lengths from each other ( Figure 4B and Figure 4C ). In addition, the positive electrode connection portion 141' or 141” may be provided to be offset in any one direction of the first direction (X direction) with respect to the positive terminal 143 ( Figure 4B and Figure 4C ). When the positive electrode connection portion 141 and the positive terminal 143 are provided to be in large-area contact, the mechanical strength of the tantalum capacitor 100 having a two-layer substrate structure can be improved. In addition, when the positive electrode connection portion 141” is provided to be offset in the first direction with respect to the positive terminal 143 toward the first surface S1 of the tantalum capacitor 100 and away from the tantalum body 110 ( Figure 4C) The gap between the tantalum body 110 and the positive electrode connection part 141 can be maximized to prevent short circuits. In addition, the positive electrode connection part 141' can also be arranged to be away from the first surface S1 of the tantalum capacitor 100 in the first direction with respect to the positive electrode terminal 143 and offset towards the tantalum body 110 ( Figure 4B ). In this example, the description is based on the positive electrode connection part and the positive electrode terminal 143, but the same variation can also be applied to the negative electrode connection part 142 and the negative electrode terminal 144.

[0052] Referring to Figures 4A to 4C , the positive electrode connection part 141 and the positive electrode terminal 143 can be spaced apart from the first surface S1, and the negative electrode connection part 142 and the negative electrode terminal 144 can be spaced apart from the second surface S2. Alternatively, the positive electrode connection part 141 and the positive electrode terminal 143 can be exposed on the first surface S1, and the negative electrode connection part 142 and the negative electrode terminal 144 can be exposed on the second surface S2.

[0053] The positive electrode connection part 141, the negative electrode connection part 142, the positive electrode terminal 143, the negative electrode terminal 144, and / or the positive electrode bonding part 145 of the tantalum capacitor 100 according to the present disclosure can be made of a conductive metal including nickel (Ni), tin (Sn), copper (Cu), chromium titanium intermetallic compound (Cr(Ti)), palladium (Pd), iron (Fe), and / or their alloys.

[0054] In one example, the positive electrode connection part 141, the negative electrode connection part 142, the positive electrode terminal 143, the negative electrode terminal 144, and / or the positive electrode bonding part 145 of the tantalum capacitor 100 of the present disclosure can be a plating layer. As will be described later, when the positive electrode connection part 141, the negative electrode connection part 142, the positive electrode terminal 143, the negative electrode terminal 144, and / or the positive electrode bonding part 145 are formed by plating, while forming each terminal and connection part with a thin thickness, the terminals and connection parts can have high density and low resistance.

[0055] The method of forming the plating layer is not particularly limited. For example, plating methods such as sputtering, subtractive method, additive method, semi-additive method (SAP), improved semi-additive method (MSAP), etc. can be used.

[0056] In a variation of the embodiment of the present disclosure, if necessary, the positive electrode terminal can include a positive electrode extension part, and the negative electrode terminal can include a negative electrode extension part.

[0057] Figures 5 to 7C is a schematic diagram showing a tantalum capacitor 200 formed with a positive electrode extension part 246 and a negative electrode extension part 247. The tantalum capacitor 200 can include a tantalum body 210, a tantalum wire 220, a substrate 230, a positive electrode bonding part 245, and a molding part 260. Referring to Figures 5 to 7C, the positive electrode extension portion 246 can be connected to the positive electrode connection portion 241 and can be exposed on the first surface S1 of the tantalum capacitor 200. Additionally, the negative electrode extension portion 247 can be connected to the negative electrode connection portion 242 and can be exposed on the second surface S2 of the tantalum capacitor 200. When the positive electrode extension portion 246 and / or the negative electrode extension portion 247 are provided, they can be used as connection terminals when mounting the substrate.

[0058] The lower surface of the positive electrode connection portion 241 and the upper surface of the positive electrode terminal 243 of the tantalum capacitor 200 according to the present disclosure can be arranged to contact each other. In this case, the positive electrode connection portion 241 and the positive electrode terminal 243 can have different sizes from each other, and the positive electrode connection portion 241 can be arranged to be offset in any one direction of the first direction (X direction).

[0059] Figures 7A to 7C A variant form of the arrangement of the positive electrode connection portion 241 and the positive electrode terminal 243 is shown. Referring to Figures 7A to 7C , the positive electrode connection portion 241 and the positive electrode terminal 243 of the tantalum capacitor 200 according to the present disclosure can have substantially the same length ( Figure 7A ) or different lengths from each other ( Figure 7B and Figure 7C ). Additionally, the positive electrode connection portion 241' or 241” can be arranged to be offset in any one direction of the first direction (X direction) relative to the positive electrode terminal 243 by being combined with the positive electrode extension portion 246 ( Figure 7B and Figure 7C ). When the positive electrode connection portion 241 and the positive electrode terminal 243 are arranged to contact each other over a large area, the mechanical strength of the tantalum capacitor 200 having a two-layer substrate structure can be improved.

[0060] Additionally, when the positive electrode connection portion 241” is arranged to be offset in the first direction relative to the positive electrode terminal 243 toward the first surface S1 of the tantalum capacitor 200 and away from the tantalum body 210 ( Figure 7C ), the interval between the tantalum body 210 and the positive electrode connection portion 241” can be maximized to prevent short - circuit. In this example, the description is based on the positive electrode connection portion and the positive electrode terminal 243, but the same variant form can also be applied to the negative electrode connection portion 242 and the negative electrode terminal 244. Additionally, compared with the tantalum wire 220 in Figure 7A and Figure 7C , the tantalum wire 220 in Figure 7B can be further extended to contact the positive electrode extension portion 246.

[0061] In an embodiment of the present disclosure, the substrate 130 of the tantalum capacitor 100 can include a curable resin 150 ( Figure 5 and Figure 6250) and inorganic fillers. The curable resin 150 may be a thermosetting resin, a photocurable resin, or a dual-curable resin having both thermosetting properties and photocurable properties. In this specification, a "thermosetting resin" refers to a resin that can be cured by appropriate application of heat treatment or aging treatment, and a "photocurable resin" refers to a resin that can be cured by irradiation with electromagnetic waves. Among the above categories of electromagnetic waves, microwaves, infrared (IR), ultraviolet (UV), X-rays, and γ-rays, as well as particle beams (such as α-particle beams, proton beams, neutron beams, and electron beams) may be included. The photocurable resin may be a cation-curable resin and / or a free-radical curable resin, but is not limited thereto.

[0062] The curable resin 150 may be a resin including thermosetting functional groups (such as isocyanate groups, hydroxyl groups, carboxyl groups, amide groups, epoxy groups, cyclic ether groups, thioether groups, acetal groups, or lactone groups) and / or functional groups curable by irradiation with electromagnetic waves. Additionally, as specific types of resins as described above, acrylic resins, polyester resins, isocyanate resins, epoxy resins, etc. may be included, but are not limited thereto.

[0063] Specific examples of the curable resin 150 may be epoxy resins such as cresol novolac epoxy resin, bisphenol A epoxy resin, bisphenol A novolac epoxy resin, phenol novolac epoxy resin, polyfunctional epoxy resin, biphenyl-type epoxy resin, xylok-type epoxy resin (phenol aralkyl-type epoxy resin), triphenol methane-type epoxy resin, alkyl-modified triphenol methane epoxy resin, naphthalene-type epoxy resin, dicyclopentadiene-type epoxy resin, and dicyclopentadiene-modified phenol-type epoxy resin, etc., but are not limited thereto.

[0064] In one example, the inorganic filler of the substrate of the present disclosure may include at least one selected from the group consisting of silica (SiO2), alumina (Al2O3), silicon carbide (SiC), barium sulfate (BaSO4), talc, clay, mica powder, aluminum hydroxide (Al(OH)3), magnesium hydroxide (Mg(OH)2), calcium carbonate (CaCO3), magnesium carbonate (MgCO3), magnesium oxide (MgO), boron nitride (BN), aluminum borate (AlBO3), barium titanate (BaTiO3), and calcium zirconate (CaZrO3). When the tantalum capacitor according to the present disclosure includes an inorganic filler, the strength of the substrate can be improved, and thus a substrate with a thin thickness can be applied.

[0065] In an example of the present disclosure, the inorganic filler included in the substrate of the tantalum capacitor may have an average D50 particle size of 0.01 μm to 5 μm. In this specification, the D50 particle size may refer to the particle size of the particles corresponding to 50% of the total volume when the particle size is cumulatively measured from small particles using a particle size analyzer. The D50 particle size may be 0.01 μm or more, 0.02 μm or more, 0.03 μm or more, 0.04 μm or more, or 0.05 μm or more, and may be 5 μm or less, 4.5 μm or less, 4.0 μm or less, 3.5 μm or less, or 3.0 μm or less, but is not limited thereto.

[0066] When the substrate according to the present disclosure includes an inorganic filler having a particle size smaller than the above range, the strength of the substrate will be insufficient, and when an inorganic filler having a particle size exceeding the above range is used, the curable resin of the substrate will not be cured uniformly.

[0067] According to an embodiment of the present disclosure, based on the total weight of the substrate, the inorganic filler included in the substrate may be in the range of 10 wt% to 90 wt%. The content of the inorganic filler may be the result obtained by analyzing samples taken from any five positions on the substrate. The inorganic filler may be 10 wt% or more, 15 wt% or more, or 20 wt% or more of the entire substrate, and may be 90 wt% or less, 85 wt% or less, or 80 wt% or less, but is not limited thereto. When the content of the included inorganic filler is less than the above range, sufficient substrate strength cannot be obtained, and when an inorganic filler having a content higher than the above range is used, a sufficient amount of curable resin cannot be cured, and thus the function of the substrate cannot be exhibited.

[0068] In an embodiment of the present disclosure, the tantalum capacitor 100 according to the present disclosure may further include a molding part 160 covering the tantalum body 110. The molding part 160 may be arranged to surround the tantalum body 110. The molding part 160 may be formed by transfer molding a resin (such as an epoxy molding compound (EMC)) to surround the tantalum body 110. The molding part 160 may be used to protect the tantalum wire 120 and the tantalum body 110 from external influences.

[0069] The present disclosure also relates to a method of manufacturing a tantalum capacitor. The manufacturing method described below will be described based on the tantalum capacitor according to the embodiment of the present disclosure, but this may be equally applicable to other embodiments provided with a positive electrode extension part and a negative electrode extension part.

[0070] Figures 8A to 8J is a diagram showing a method of manufacturing a tantalum capacitor according to an embodiment of the present disclosure. Refer to Figures 8A to 8J, the method of manufacturing a tantalum capacitor in an embodiment of the present disclosure may include an operation of etching a first resist layer 1003 on a substrate film 1000 (wherein a carrier film 1001, a substrate metal layer 1002, and a first resist layer 1003 are sequentially stacked in the substrate film 1000). Figure 8A Schematically shows the substrate film 1000 of this embodiment. As Figure 8A shown, in the substrate film 1000, a carrier film 1001, a substrate metal layer 1002, and a first resist layer 1003 may be sequentially stacked. Figure 8B Shows that the first resist layer 1003 on the substrate film 1000 is etched to form a first resist pattern. Subsequently, as Figure 8C shown, a first plating layer is formed on the portion of the substrate film 1000 where the first resist layer 1003 is etched. The first plating layer can be used as the positive terminal 143 and the negative terminal 144 of the tantalum capacitor 100 according to the present disclosure.

[0071] Next, as Figure 8D shown, a second resist layer 1004 is formed on the first plating layer and the first resist layer 1003 of the substrate film 1000. Thereafter, as Figure 8E shown, after etching the second resist layer 1004, a second plating layer is formed on the portion where the second resist layer 1004 is etched. The second plating layer can be used as the positive connection portion 141 and the negative connection portion 142 of the tantalum capacitor 100 according to the present disclosure.

[0072] Figure 8F And Figure 8G are diagrams showing the process of forming the positive electrode joint. Referring to Figure 8F and Figure 8G , a third resist layer 1005 is formed on the substrate film 1000, wherein the second plating layer is formed on the etched portion of the second resist layer 1004. The portion of the third resist layer 1005 where the positive electrode joint is to be formed is etched, and then a positive electrode joint 145 can be formed on the etched portion, and the remaining third resist layer 1005 is removed. The method of forming the positive electrode joint 145 is not particularly limited, but it can be formed by plating.

[0073] Next, a tantalum body 110 with a tantalum wire exposed from one of its surfaces can be mounted on the substrate film 1000 ( Figure 8H ), and then a molding portion 160 can be formed ( Figure 8I ), and a tantalum capacitor according to the present disclosure can be manufactured through cutting and separating operations (for example, removing the carrier film 1001 and the substrate metal layer 1002) ( Figure 8J ). The tantalum wire of the tantalum body 110 and the positive electrode joint 145 and / or the negative connection portion 142 and the tantalum body 110 can be connected by spot welding, laser welding, or applying a conductive adhesive. However, it is not limited thereto.

[0074] Figures 9A to 9O is a diagram showing a method of manufacturing a tantalum capacitor according to another embodiment of the present disclosure. Referring to Figures 9A to 9O , the method of manufacturing a tantalum capacitor according to this embodiment includes the following operations: forming and etching a first resist layer 2004 on a substrate film 2000 in which a carrier film 2001, a substrate metal layer 2002, and a first metal layer 2003 are sequentially stacked. Figure 9A shows the substrate film 2000 according to this embodiment, Figure 9B shows the state in which the first resist layer 2004 is formed on the substrate film 2000, and Figure 9C is a schematic diagram showing the state of etching the first resist layer 2004. The method for manufacturing the tantalum capacitor of this embodiment may include the following operations: etching the first resist layer 2004 as described above, and then etching the first metal layer 2003 exposed to the etched portion of the first resist layer 2004 ( Figure 9D ). The remaining portion of the first metal layer after etching can be used as the positive terminal 143 and the negative terminal 144. Then, as Figure 9E shown, the remaining first resist layer 2004 is removed.

[0075] Figures 9F to 9H shows the operations of forming the positive electrode connection portion 141 and the negative electrode connection portion 142 of the tantalum capacitor 200 in the method of manufacturing the tantalum capacitor according to this embodiment. Referring to Figures 9F to 9H , a second resist layer 2005 is formed on the substrate film 2000 on which the first metal layer 2003 remains ( Figure 9F ). The portions of the second resist layer 2005 where the positive electrode connection portion and the negative electrode connection portion are to be formed are etched to expose the first metal layer 2003 below the second resist layer 2005 ( Figure 9G ). Next, a second metal layer is formed on the exposed first metal layer 2003 to form the positive electrode connection portion 141 and the negative electrode connection portion 142 ( Figure 9H ).

[0076] Subsequently, a third resist layer 2006 is formed on the substrate film 2000 on which the positive electrode connection portion 141 and the negative electrode connection portion 142 are formed ( Figure 9I ). The third resist layer 2006 is used to form the positive electrode bonding portion 145, and Figures 9I to 9L shows the process of forming the positive electrode bonding portion 145 in the method of manufacturing the tantalum capacitor according to this embodiment. The portion of the first formed third resist layer 2006 where the positive electrode bonding portion 145 is to be formed is etched ( Figure 9J ), and the positive electrode bonding portion 145 is formed on the etched portion ( Figure 9K)。Then, the remaining third resistive layer 2006 is removed ( Figure 9L ).

[0077] Next, the tantalum body 110 (where the tantalum wire can be exposed on one surface of the tantalum body 110) is mounted on the substrate film 2000 ( Figure 9M ), a molded portion 160 can be formed ( Figure 9N ), and then the tantalum capacitor 100 according to the present disclosure can be manufactured by a cutting and separating process (for example, removing the carrier film 2001 and the substrate metal layer 2002) ( Figure 9O ). The tantalum wire 120 of the tantalum body 110 can be connected to the positive electrode joint 145 and / or the negative electrode connection portion 142 to the tantalum body 110 by spot welding or laser welding or by applying a conductive adhesive, but is not limited thereto.

[0078] In an embodiment of the present disclosure, the first metal layer, the second metal layer, and / or the positive electrode connection portion can be formed by plating. The method of forming the plating layer is not particularly limited. For example, it can be a plating method such as sputtering, subtractive method, additive method, semi-additive method (SAP), modified semi-additive method (MSAP), etc.

[0079] In an example of the present disclosure, the resistive layer of the above embodiment may include a curable resin and an inorganic filler.

[0080] In one example, the curable resin may include a photocurable resin.

[0081] The description of the photocurable resin and the inorganic filler is the same as the above description, and thus will be omitted.

[0082] As described above, the method of manufacturing a tantalum capacitor according to the present disclosure forms a metal layer by etching and plating of a resistive layer, and accordingly can have excellent process efficiency.

[0083] Conventionally, a method of using a stamping already manufactured substrate to form via holes, forming via electrodes, attaching metal pads on the substrate, and then mounting a tantalum capacitor is used. However, according to the manufacturing method of the present disclosure, a stacking method of sequentially forming a resistive layer and a metal layer on a carrier film can be used, so that unnecessary processes can be reduced, thereby providing a tantalum capacitor with excellent production efficiency.

[0084] As described above, as one of the various effects of the present disclosure, a tantalum capacitor having a reduced equivalent series resistance (ESR) can be provided.

[0085] As one of the various effects of the present disclosure, a tantalum capacitor having a high capacitance can be provided.

[0086] As one of the various effects of the present disclosure, a tantalum capacitor capable of improving productivity can be provided.

[0087] As one of the various effects of the present disclosure, a tantalum capacitor having excellent reliability by improving mechanical strength can be provided.

[0088] However, the various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present disclosure.

[0089] Although the exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and changes can be made without departing from the spirit and scope of the present disclosure as defined by the appended claims.

Claims

1. A tantalum capacitor, comprising: a first surface and a second surface facing a first direction, a third surface and a fourth surface facing a second direction, and a fifth surface and a sixth surface facing a third direction; a tantalum body having a surface, and a tantalum wire extending from the surface in the first direction; and a substrate, the tantalum body being mounted on the substrate in the third direction, wherein the substrate is an organic-inorganic composite substrate, wherein the substrate includes a substrate mounting surface and another surface opposite to the substrate mounting surface, the substrate mounting surface constituting the sixth surface, and the substrate includes: a positive electrode connection portion connected to the tantalum wire and exposed on the another surface; a negative electrode connection portion connected to the tantalum body and exposed on the another surface; a positive terminal connected to the positive electrode connection portion and exposed on the substrate mounting surface; and a negative terminal connected to the negative electrode connection portion and exposed on the substrate mounting surface, and wherein a lower surface of the positive electrode connection portion and an upper surface of the positive terminal are arranged to be in contact with each other, and a lower surface of the negative electrode connection portion and an upper surface of the negative terminal are arranged to be in contact with each other.

2. The tantalum capacitor according to claim 1, wherein, The substrate includes a first layer and a second layer, the first layer having the substrate mounting surface, the tantalum capacitor being mounted through the substrate mounting surface, and the tantalum body being mounted on the second layer.

3. The tantalum capacitor according to claim 2, wherein, The positive electrode connection portion and the negative electrode connection portion are provided inside the second layer and penetrate through the entire thickness of the second layer, and the positive terminal and the negative terminal are provided inside the first layer and penetrate through the entire thickness of the first layer.

4. The tantalum capacitor according to claim 1, wherein, At least one of the length and width of each of the positive terminal and the negative terminal is greater than the thickness.

5. The tantalum capacitor according to claim 1, wherein, At least one of the length and width of each of the positive electrode connection portion and the negative electrode connection portion is greater than the thickness.

6. The tantalum capacitor according to claim 1, wherein: the lower surface of the positive electrode connection portion and the upper surface of the positive terminal are arranged to be in surface contact, and the lower surface of the negative electrode connection portion and the upper surface of the negative terminal are arranged to be in surface contact.

7. The tantalum capacitor according to claim 1, the tantalum capacitor further includes a positive electrode bonding portion provided on the substrate, and the positive electrode bonding portion is connected to the positive electrode connection portion and the tantalum wire.

8. The tantalum capacitor according to claim 7, wherein, The positive electrode bonding portion is arranged between the positive electrode connection portion and the tantalum wire with respect to the third direction.

9. The tantalum capacitor according to claim 1, wherein, The positive electrode connection portion and the positive terminal have the same length as each other in the first direction.

10. The tantalum capacitor according to claim 1, wherein, The positive electrode connection portion and the positive terminal have different lengths from each other in the first direction.

11. The tantalum capacitor according to claim 10, wherein, The length of the positive electrode connection portion is less than the length of the positive terminal.

12. The tantalum capacitor according to claim 10, wherein, The positive electrode connection portion is offset from the positive terminal in any one direction of the first direction.

13. The tantalum capacitor according to claim 12, wherein, The positive electrode connection portion is offset from the positive terminal in the first direction toward the first surface and away from the tantalum body.

14. The tantalum capacitor according to claim 1, wherein, The positive electrode connection portion and the positive terminal are spaced apart from the first surface, and The negative electrode connection portion and the negative terminal are spaced apart from the second surface.

15. The tantalum capacitor according to claim 1, wherein, The positive electrode connection part and the positive terminal are exposed on the first surface, and the negative electrode connection part and the negative terminal are exposed on the second surface.

16. The tantalum capacitor according to claim 1, wherein, The positive electrode connection part includes a positive electrode extension part, and the negative electrode connection part includes a negative electrode extension part.

17. The tantalum capacitor according to claim 16, wherein, The positive electrode extension part is exposed on the first surface, and the negative electrode extension part is exposed on the second surface.

18. The tantalum capacitor according to claim 1, wherein, The substrate includes a curable resin and an inorganic filler.

19. The tantalum capacitor according to claim 18, wherein, The curable resin includes a photocurable resin.

20. The tantalum capacitor according to claim 19, wherein, The inorganic filler includes at least one selected from the group consisting of silica, alumina, silicon carbide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum borate, barium titanate, and calcium zirconate.

21. The tantalum capacitor according to claim 1, wherein the tantalum capacitor further includes a molding part covering the tantalum body.

22. A method for manufacturing a tantalum capacitor, comprising the following operations: etching the first resist layer in a base film in which a carrier film, a base metal layer, and the first resist layer are sequentially stacked; forming a first plating layer on the etched part of the base film; forming a second resist layer on the first plating layer and the first resist layer; and etching the second resist layer to expose the first plating layer, and then forming a second plating layer on the etched part of the second resist layer.

23. A method for manufacturing a tantalum capacitor, comprising the following operations: The first resist layer is formed and etched on the substrate film, wherein, sequentially stacking a carrier film, a base metal layer, and a first metal layer in the base film; etching the first metal layer of the etched part exposed to the first resist layer; forming a second resist layer on the base film on which the first metal layer remains; etching the second resist layer to expose the first metal layer; and forming a second metal layer on the exposed first metal layer.

24. The method for manufacturing a tantalum capacitor according to claim 23, wherein, The first resist layer includes a curable resin and an inorganic filler.

25. The method for manufacturing a tantalum capacitor according to claim 24, wherein, The curable resin includes a photocurable resin.

26. A tantalum capacitor, comprising: a tantalum body having a surface, and a tantalum wire extending from the surface in a first direction; and a substrate, the tantalum body being mounted on the substrate in a second direction, wherein the substrate includes a first resist layer and a second resist layer, and a first through hole and a second through hole, the first resist layer and the second resist layer are stacked on each other in the second direction, the first through hole passes through the first resist layer and the second resist layer in the second direction, the second through hole passes through the first resist layer and the second resist layer in the second direction, and two layers of positive electrodes are disposed in the first through hole, and two layers of negative electrodes are disposed in the second through hole.

27. The tantalum capacitor according to claim 26, wherein: the two layers of positive electrodes include a positive electrode connection part and a positive terminal, the positive electrode connection part is connected to the tantalum wire, and the positive terminal is connected to the positive electrode connection part and is exposed on the lower surface of the tantalum capacitor in the second direction, and The two-layer negative electrode includes a negative electrode connection portion and a negative terminal. The negative electrode connection portion is connected to the tantalum body, and the negative terminal is connected to the negative electrode connection portion and exposed on the lower surface of the tantalum capacitor in the second direction.

28. The tantalum capacitor according to claim 27, wherein: The lower surface of the positive electrode connection portion and the upper surface of the positive terminal are arranged to contact each other, and The lower surface of the negative electrode connection portion and the upper surface of the negative terminal are arranged to contact each other.

29. The tantalum capacitor according to claim 27, the tantalum capacitor further includes a positive electrode bonding portion, the positive electrode bonding portion is arranged on the substrate, and The positive electrode bonding portion is connected to the positive electrode connection portion and the tantalum wire.

30. The tantalum capacitor according to claim 29, wherein, The positive electrode bonding portion is arranged between the positive electrode connection portion and the tantalum wire in the second direction.

31. The tantalum capacitor according to claim 27, wherein, The positive electrode connection portion and the positive terminal have the same length as each other in the first direction.

32. The tantalum capacitor according to claim 27, wherein, The positive electrode connection portion and the positive terminal have different lengths from each other in the first direction.

33. The tantalum capacitor according to claim 32, wherein, The length of the positive electrode connection portion is less than the length of the positive terminal.

34. The tantalum capacitor according to claim 32, wherein, The positive electrode connection portion is offset in any one direction of the first direction with respect to the positive terminal.

35. The tantalum capacitor according to claim 34, wherein, The positive electrode connection portion is offset in the first direction with respect to the positive terminal toward the first end surface of the tantalum capacitor and away from the tantalum body.

36. The tantalum capacitor according to claim 27, wherein, The positive electrode connection portion and the positive terminal are spaced apart from the first end surface of the tantalum capacitor in the first direction, and The negative electrode connection portion and the negative terminal are spaced apart from the second end surface of the tantalum capacitor in the first direction.

37. The tantalum capacitor according to claim 27, wherein, The positive electrode connection portion and the positive terminal are exposed on the first end surface of the tantalum capacitor in the first direction, and The negative electrode connection portion and the negative terminal are exposed on the second end surface of the tantalum capacitor in the first direction.

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