Etching system

Abstract

The application relates to an etching system, which comprises: an etching cavity used for etching a substrate; a detection cavity used for detecting the etching result of the substrate; a deposition cavity used for depositing the substrate detected in the detection cavity; an optical detection device comprising an optical module and a detection control module, the optical module being located in the detection cavity and used for detecting the etching result of the substrate under the control of the detection control module; wherein the substrate is in a vacuum state when being transferred between the etching cavity, the deposition cavity and the detection cavity; and a central control device electrically connected with the detection control module and used for controlling the substrate in the detection cavity to enter the deposition cavity or the etching cavity according to the etching result of the substrate. The application can effectively improve the production yield of semiconductor products.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and in particular to an etching system. Background Technology

[0002] In semiconductor device fabrication, the substrate to be processed is often etched, and then deposition is performed on the etched substrate to form the desired product. During the process, the etching and deposition processes are usually controlled separately. However, this processing method can affect device performance and product yield when forming some semiconductor devices (such as third-generation semiconductors).

[0003] With the development of semiconductor technology, the requirements for device performance are becoming increasingly stringent. Therefore, it is urgent to improve the existing processing system in order to enhance device performance. Summary of the Invention

[0004] Based on this, embodiments of this application provide an etching system that can improve device performance.

[0005] An etching system, characterized in that it comprises:

[0006] Etching chamber, used for etching the substrate;

[0007] The detection cavity is used to detect the etching results of the substrate;

[0008] A deposition chamber for depositing material onto the substrate after detection within the detection chamber;

[0009] An optical inspection device includes an optical module and a detection control module. The optical module is located inside the detection cavity and is used to detect the etching results of the substrate under the control of the detection control module.

[0010] The substrate is in a vacuum state when it is transferred between the etching cavity, the deposition cavity, and the detection cavity;

[0011] The central control device is electrically connected to the detection control module and is used to control the substrate in the detection cavity to enter the deposition cavity or the etching cavity according to the etching result of the substrate.

[0012] In one embodiment,

[0013] The etching system includes at least two etching cavities, the at least two etching cavities including a low-density etching cavity and a high-density etching cavity;

[0014] The central control device is also used to control the substrate to enter the low-density etching cavity and / or the high-density etching cavity according to the substrate state.

[0015] In one embodiment,

[0016] The optical module includes a light emitting unit and a light receiving unit. The light emitting unit is used to send a detection beam to the substrate, and the light receiving unit is used to receive the feedback beam from the substrate and convert the feedback beam into an electrical signal.

[0017] The detection and control module includes a light source unit, a light emission control unit, and an analysis unit. The light emission control unit is electrically connected to the light source unit and is used to control the light source unit to provide a light source for the light emission unit. The analysis unit is electrically connected to the light receiving unit and is used to analyze the etching results of the substrate based on the electrical signal.

[0018] In one embodiment, the detection cavity is further provided with:

[0019] A temperature detection device is used to detect the temperature of the substrate.

[0020] A cooling device is used to cool the etched substrate.

[0021] In one embodiment,

[0022] The etching system further includes a transfer chamber with a transfer gate valve. When the transfer gate valve is closed, it isolates the interior of the transfer chamber from the outside. A robotic arm is installed inside the transfer chamber. The central control device controls the transfer chamber to rotate, or the central control device controls the transfer chamber to rotate and moves the transfer chamber in the direction where the transfer gate valve is located. When the pressure of the transfer chamber is the same as that of the corresponding other chambers, the central control device controls the transfer gate valve to open.

[0023] In one embodiment,

[0024] The etching chamber has an etching gate valve on the side facing the transfer chamber. When the etching gate valve is closed, it isolates the inside of the etching chamber from the outside.

[0025] The detection chamber has a detection gate valve on the side facing the transmission chamber. When the detection gate valve is closed, it isolates the inside of the detection chamber from the outside.

[0026] The deposition chamber has a deposition gate valve on the side facing the transfer chamber. When the deposition gate valve is closed, it isolates the interior of the deposition chamber from the outside. The detection chamber, the transfer chamber, the etching chamber, and the deposition chamber are all connected to a vacuum system so that the substrate can be transferred between the transfer chamber and other chambers under vacuum.

[0027] In one embodiment, the etching system further includes a peripheral cavity, in which the transfer cavity, the etching cavity, the detection cavity, and the deposition cavity are all located, and the peripheral cavity is also connected to a vacuum system;

[0028] Alternatively, the etching chamber, the detection chamber, and the deposition chamber may form an inner cavity, with the transfer chamber located within the inner cavity, which is also connected to a vacuum system.

[0029] In one embodiment,

[0030] The etching system also includes a test chamber, which has a test gate valve on the side facing the transfer chamber. When the test gate valve is closed, it isolates the interior of the test chamber from the outside. The test chamber is used to perform performance testing on the epitaxial wafer during deposition and / or the product formed on the substrate after deposition.

[0031] In one embodiment,

[0032] During the deposition process in the deposition chamber, the central control equipment controls the deposition chamber to pause deposition and controls the robotic arm to transport the substrate from the deposition chamber to the test chamber to detect the performance of the product formed on the substrate during the deposition process; and determines whether to continue or terminate deposition based on the detection results.

[0033] And / or, when the deposition in the deposition chamber is completed, the central control device controls the robotic arm to transport the substrate from the deposition chamber to the test chamber to detect the performance of the product formed on the substrate after deposition.

[0034] In one embodiment, the etching system further includes a loading and unloading cavity located within the peripheral cavity for loading and unloading the substrate. The loading and unloading cavity has a loading and unloading gate valve on the side facing the transfer cavity, which isolates the interior of the loading and unloading cavity from the exterior when closed.

[0035] The aforementioned etching system, through the setup of a detection chamber, optical inspection device, and central control equipment, can effectively monitor the quality of the etched substrate, thereby improving the performance of devices formed on the substrate. Furthermore, while monitoring the etching results, the detection chamber also cools the substrate after etching, preventing cracking or internal crack formation during subsequent deposition, thus further improving device performance. Simultaneously, the substrate is in a vacuum state during transfer between the etching chamber, deposition chamber, and detection chamber, effectively reducing external contamination such as C, O, and other donor impurities in the air, further improving device performance and product yield. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the etching system provided in one embodiment;

[0038] Figure 2 This is a structural block diagram of the optical inspection device and central control equipment of the etching system provided in one embodiment;

[0039] Figure 3 This is a schematic diagram of the etching system provided in another embodiment;

[0040] Figure 4 This is a schematic diagram of the etching system provided in another embodiment;

[0041] Figure 5 This is a schematic diagram of the etching system provided in another embodiment. Detailed Implementation

[0042] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0044] It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.

[0045] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.

[0046] Embodiments of the invention are described herein with reference to cross-sectional views illustrating ideal embodiments (and intermediate structures) of this application, thus allowing for variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. For instance, implantation regions shown as rectangular typically have rounded or curved features at their edges and / or implantation concentration gradients, rather than a binary change from implantation regions to non-implantation regions. Similarly, the buried regions formed by implantation can result in some implantation in the region between the buried region and the surface traversed during implantation. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device and do not limit the scope of this application.

[0047] In one embodiment, see Figure 1 as well as Figure 2 An etching system is provided, comprising: an etching chamber 100, a detection chamber 200, a deposition chamber 300, an optical detection device 400, and a central control device 500.

[0048] The etching cavity 100 is used to etch the substrate.

[0049] The etching cavity 100 performs the required interface treatment on the substrate. Specifically, the substrate may include, but is not limited to, a nitride epitaxial wafer (such as a gallium nitride epitaxial wafer) for homoepitaxial growth.

[0050] The interface processing at this stage is a specific process, customized according to the different materials of the devices to be grown later. When the target device is an optoelectronic device, the substrate will undergo impurity removal and patterning processing in the etching cavity 100 to improve crystal quality and light extraction efficiency. When the target device is a microelectronic device, the substrate will undergo impurity removal and planarization processing in the etching cavity 100 to improve high voltage and high frequency performance.

[0051] Each etching chamber 100 may be equipped with a first pressure detection device (not shown) and a first gas detection device (not shown). The first pressure detection device and the first gas detection device are used to detect the type and pressure of the gas in the etching chamber 100, and then adjust the gas parameters in the etching chamber 100 to achieve etching.

[0052] Simultaneously, the etching chamber 100 may be equipped with a rotatable workpiece stage for placing the substrate and a control device for adjusting the rotation speed and oscillation angle of the rotatable workpiece stage. By adjusting the control device, the rotatable workpiece stage can be oscillated, enabling it to have an adjustable etching angle. The rotatable workpiece stage itself can also rotate, thus improving etching uniformity. This workpiece stage can improve the uniformity of the etching process and optimize the etching rate. Furthermore, by adjusting the rotation speed and oscillation angle of the rotatable workpiece stage, the etching angle can meet the etching requirements of materials with different crystal orientations, which is beneficial for improving the film etching rate.

[0053] A temperature control device for adjusting the substrate temperature can be connected to the rotatable workpiece stage. The temperature control device may include cooling pipes and coolant circulating within the cooling pipes. The cooling pipes may be located inside or on the surface of the rotatable workpiece stage. By placing a temperature control device inside or on the surface of the rotatable workpiece stage, the stage gains low-temperature control functionality, enabling temperature adjustment and meeting the etching requirements of different devices.

[0054] The rotatable workpiece stage can also be connected to a monitoring device (such as a camera) for monitoring the etching degree of the substrate.

[0055] The etching chamber 100 can also be connected to a gas pipeline for introducing different etching gases. The etching chamber 100 also includes an ion source to perform plasma treatment on the etching gases.

[0056] The detection chamber 200 is used to detect the etching results of the substrate. After the substrate is etched in the etching chamber 100, it is sent to the detection chamber 200 for detection.

[0057] The deposition chamber 300 is used to deposit the substrate after it has been tested in the detection chamber 200. The deposition chamber 300 may be equipped with a second pressure detection device (not shown) and a second gas detection device (not shown). The second pressure detection device and the second gas detection device are used to detect the type and pressure of the gas in the deposition chamber 300, and then to adjust the gas parameters in the deposition chamber 300 to achieve deposition.

[0058] The substrate is in a vacuum state when it is transferred between the etching chamber 100, the deposition chamber 300 and the detection chamber 200, thereby reducing external contamination such as C, O and other donor impurities in the air.

[0059] The optical inspection device 400 includes an optical module 410 and an inspection control module 420. The optical module 410 is located inside the inspection cavity 200 and is used to inspect the etching results of the substrate under the control of the inspection control module 420.

[0060] The optical inspection device 400 can acquire physical parameter information of the substrate after etching, such as the critical size of the substrate, film thickness, etching depth, surface roughness, and distribution of etching pits.

[0061] In specific testing, one or more measurements can be performed at one location on the substrate to meet the requirements of process monitoring. Simultaneously, the incident point of the optical path of the optical module 410 can be changed to measure different locations on the substrate.

[0062] The detection and control module 420 can analyze the physical parameters of the etched substrate to provide information such as the uniformity of the etching process. Based on these results, it can provide feedback on the thinning and / or etching effect in the etching cavity and determine whether to proceed to the next deposition step.

[0063] The central control equipment 500 is electrically connected to the detection and control module, which is used to control the substrate in the detection cavity to enter the deposition cavity or etching cavity according to the etching results of the substrate.

[0064] If the etching results are good and meet the pre-set process requirements, it will be sent into the deposition chamber 300 for the next deposition step.

[0065] If the etching result is unsatisfactory and does not meet the process requirements, the substrate in the detection cavity 200 can be removed and put back into the etching cavity 100 for re-etching until it meets the process requirements.

[0066] If the etching results are poor and seriously fail to meet the standards, the material can be scrapped or otherwise disposed of.

[0067] Therefore, in this embodiment, by setting up the detection cavity 200, the optical detection device 400 and the central control device 500, the quality of the etched substrate can be effectively monitored, which is beneficial to improving the performance of the device formed based on the substrate.

[0068] Furthermore, the etching process within the etching chamber 100 typically involves a high process temperature. The subsequent deposition process also usually requires a relatively high temperature, causing the deposition chamber to rapidly heat from a lower room temperature to a higher temperature. If deposition is performed directly on the substrate after etching, the substrate will experience a rapid cycle of high temperature followed by a lower temperature and back to a higher temperature. This can easily lead to wafer cracking or the formation of internal cracks, affecting the quality of subsequent film deposition and the performance of the final device.

[0069] Therefore, in this embodiment, the detection cavity 200 can monitor the etching results of the substrate and also cool the substrate after etching by the etching cavity 100, thereby preventing the substrate from cracking or forming cracks during subsequent deposition, thus further improving device performance.

[0070] In one embodiment, the etching system may include at least two etching cavities 100. The at least two etching cavities 100 include a high-density etching cavity and a low-density etching cavity.

[0071] Specifically, the high-density etching chamber and the low-density etching chamber can each contain low-density plasma etching equipment and high-density plasma etching equipment, respectively. Low-density plasma etching is typically reactive ion etching (RIE), while high-density plasma etching is typically inductively coupled plasma etching (ICP) or capacitively coupled plasma etching (CCP). Compared to low-density plasma etching equipment, high-density plasma etching equipment features faster etching speeds but relatively coarser surface roughness, making it suitable for substrate thinning and initial and rapid etching of substrate wafers. Low-density plasma etching equipment, on the other hand, can perform more precise etching of substrate wafers, refining the etching pattern and controlling its direction.

[0072] Meanwhile, the central control device 500 is also used to control the substrate to enter the low-density etching cavity and / or high-density etching cavity according to the substrate condition (such as the type of device pre-processed on the substrate and / or the flatness of the substrate surface and / or the substrate thickness, etc.).

[0073] As an example, in some cases, under the control of the central control device 500, the substrate can first be sent to a high-density etching chamber equipped with a high-density plasma etching device. After initial etching, the substrate is sent to a low-density etching chamber equipped with a low-density plasma etching device. Specifically, the thinning thickness, etching depth, and surface morphology can be determined based on the substrate thickness, the type of device pre-processed on the substrate, etc.

[0074] Alternatively, in some cases, high-density plasma etching equipment is not required for etching. In this case, the central control equipment can directly transfer the substrate to the low-density etching chamber where the low-density plasma etching equipment is located.

[0075] In one embodiment, see Figure 2 The optical module 410 includes a light emitting unit 411 and a light receiving unit 412.

[0076] The light emitting unit 411 is used to send a detection beam to the substrate. The detection beam can be infrared light or laser light, etc. The detection beam can illuminate the bottom surface of the substrate or the top surface of the substrate. The light emitting unit 411 can focus and illuminate one location surface of the substrate multiple times, and / or illuminate multiple locations surface.

[0077] The optical receiving unit 412 is used to receive the feedback beam from the substrate and convert the feedback beam into an electrical signal. The feedback beam can be the beam formed after the detection beam is emitted onto the substrate and then subjected to reflection, refraction, scattering, interference, or a combination thereof. The optical receiving unit 412 captures the feedback beam signal and converts it into an electrical signal.

[0078] The detection and control module 420 includes a light source unit 421, a light emission control unit 422, and an analysis unit 423.

[0079] The light source unit 421 may include, but is not limited to, optical chips such as laser chips or infrared light chips.

[0080] The light-emitting control unit 422 is electrically connected to the light source unit 421 and is used to control the light source unit 421 to provide a light source to the light emitting unit 411. Specifically, the light source unit 421 and the light emitting unit 411 can transmit light via optical fiber. As an example, the detection control module 420 can be located outside the detection cavity 200. The optical fiber can penetrate both inside and outside the detection cavity 200.

[0081] The analysis unit 423 is electrically connected to the light receiving unit 412 and is used to analyze the etching results of the substrate based on the electrical signals transmitted by the light receiving unit 412. Specifically, the analysis unit 423 can use professional testing software (such as a tool software corresponding to the optical inspection device 400) to obtain information about the physical parameters of the substrate after etching, such as the critical dimensions of the substrate, film thickness, etching depth, surface roughness, and the distribution of etch pits.

[0082] In one embodiment, the substrate can be cooled to below a preset temperature in the detection cavity 200. The preset temperature can be, for example, 300°C or 200°C. In this case, a temperature detection device can be provided within the detection cavity 200 to effectively detect the temperature of the substrate.

[0083] Of course, this embodiment is not intended to limit the scope of the invention. In other embodiments, the detection cavity 200 may not contain a temperature detection device. In this case, the ideal cooling effect can be achieved by controlling the time the substrate spends in the detection cavity 200.

[0084] In one embodiment, the detection cavity 200 may further include a cooling device. The cooling device can rapidly and effectively cool the etched substrate.

[0085] As an example, the cooling device may include a cooling pipe. A first substrate placement device may be provided inside the detection chamber. The first substrate placement device may include multiple first substrate placement stages, which may be arranged vertically from top to bottom. Each first substrate placement stage can hold one substrate. A cooling pipe may be provided under the substrate placement stage, thereby enabling rapid and effective cooling of the substrate.

[0086] Of course, in other embodiments, the detection cavity 200 may not be equipped with a cooling device. In this case, the substrate can be naturally cooled within the detection cavity 200.

[0087] In one embodiment, see Figure 3 The etching system also includes a transfer chamber 600. The transfer chamber 600 has a transfer gate valve 620, which isolates the interior of the transfer chamber 600 from the exterior when closed.

[0088] A robotic arm 610 is installed inside the transfer chamber 600. The robotic arm 610 is used to transfer the substrate. The transfer chamber 600 has a transfer gate valve 620, which isolates the interior of the transfer chamber 600 from the outside when closed. The transfer chamber 600 can also be connected to a vacuum system, thereby providing a vacuum environment for the interior of the chamber.

[0089] Specifically, the robotic arm 610 includes a robotic arm 611 and a substrate pickup interface 612. The substrate pickup interface 612 picks up the substrate by vacuum adsorption and transports it to other chambers by the robotic arm 611.

[0090] The central control device 500 controls the rotation of the transfer cavity 600, thereby aligning the transfer cavity 600 with other chambers and transferring the substrate between them.

[0091] Alternatively, the central control device 500 controls the rotation of the transfer chamber and moves the transfer chamber in the direction where it is equipped with a transfer gate valve, so that the transfer chamber 600 can be aligned with and close to other chambers, thereby transferring the substrate between the various other chambers.

[0092] Furthermore, when the pressure in the transmission chamber 600 is the same as that in the corresponding other chambers, the central control device 500 controls the transmission gate valve 620 to open, thereby facilitating the opening control of the transmission gate valve 620.

[0093] Furthermore, when the pressure in the transmission chamber is the same as that in the corresponding other chambers, the central control equipment controls the transmission gate valve to open.

[0094] The transfer chamber 600 in this embodiment includes a transfer gate valve 620. When the transfer gate valve 620 is closed, it isolates the interior of the transfer chamber 600 from the exterior, thus making the transfer chamber 600 independent of other chambers. This allows the transfer chamber 600 to be unaffected by other chambers. For example, the size of the transfer chamber 600 can be flexibly adjusted to suit specific needs, as it is not affected by other chambers. Specifically, the transfer chamber 600 can be designed as a relatively small chamber, facilitating evacuation to a higher vacuum level for better protection of the substrate during transfer and preventing contamination. Furthermore, the independence of the transfer chamber 600 from other chambers reduces the difficulty of chamber design, fabrication, and post-use maintenance.

[0095] Furthermore, the transfer chamber 600 in this embodiment can rotate under the control of the control device, so that the same transfer gate valve 620 can be aligned with different process chambers by rotating the transfer chamber 600. This makes it possible to set only one transfer gate valve 620 in the transfer chamber 600, thereby simplifying the structure of the transfer chamber 600 and reducing the manufacturing cost of the transfer chamber 600.

[0096] In one embodiment, see Figure 3 The etching chamber 100 has an etching gate valve 110 on the side facing the transfer chamber 600. When the etching gate valve 110 is closed, it isolates the interior of the etching chamber 100 from the outside. The detection chamber 200 has a detection gate valve 210 on the side facing the transfer chamber 600. When the detection gate valve 210 is closed, it isolates the interior of the detection chamber 200 from the outside. The deposition chamber 300 has a deposition gate valve 310 on the side facing the transfer chamber 600. When the deposition gate valve 310 is closed, it isolates the interior of the deposition chamber 300 from the outside. Therefore, the detection chamber 200, the transfer chamber 600, the etching chamber 100, and the deposition chamber 300 are independent of each other.

[0097] The detection chamber 200, transfer chamber 600, etching chamber 100, and deposition chamber 300 are all connected to a vacuum system to allow the transfer chamber 600 to transfer the substrate with other chambers under vacuum. Specifically, the vacuum system may include multiple vacuum devices. Different chambers can have independent vacuum devices, facilitating flexible vacuuming of each chamber as needed. Of course, different chambers can also share a vacuum device; this is not a limitation.

[0098] In this embodiment, the detection chamber 200, etching chamber 100, and deposition chamber 300 are all connected to a vacuum system, ensuring that each process chamber is under vacuum, thereby preventing contamination of the epitaxial wafer in each chamber. Simultaneously, the transfer chamber 600 is also connected to a vacuum system, preventing contamination of the epitaxial wafer during transfer. Therefore, this embodiment effectively reduces external contamination such as C, O, and other donor impurities in the air.

[0099] In one embodiment, see Figure 3 The etching system also includes a peripheral cavity 700. The transfer cavity 600, etching cavity 100, detection cavity 200 and deposition cavity 300 are all located within the peripheral cavity 700.

[0100] The peripheral cavity 700 is also connected to the vacuum system. The setting of the peripheral cavity 700 can make the entire etching system a closed vacuum environment, thereby effectively preventing the substrate from being contaminated during the etching process.

[0101] It is understood that the peripheral cavity 700 has an external cavity inlet / outlet portion (not shown in the figure) for the substrate to enter and exit.

[0102] In one embodiment, the etching system includes an inner cavity. Other chambers besides the transfer cavity 600 (such as the etching cavity 100, the detection cavity 200, and the deposition cavity 300) surround and form a closed inner cavity. The inner cavity is also connected to a vacuum system, in which case the transfer cavity 500 can be located within the inner cavity.

[0103] Alternatively, in some embodiments, the etching system may also have a peripheral cavity or an inner cavity, etc., and there are no restrictions on this.

[0104] When an outer or inner cavity is provided, the central control device 500 can control the transfer cavity 600 to rotate and move linearly in the direction where the transfer gate valve 620 is located. During substrate transfer between the transfer cavity 600 and other cavities, the transfer gate valve 620 can contact the gate valves of the other cavities. Then, the two cavities are evacuated to a similar pressure, thereby simultaneously opening the gate valves of the transfer cavity 600 and the other cavities to allow substrate transfer via the robotic arm 610. Since the central control device 500 also controls the transfer cavity 600 to move linearly in the direction where the transfer gate valve 620 is located, the vacuum requirement for the outer cavity 700 or the inner cavity is significantly reduced.

[0105] Of course, the central control equipment may also choose not to control the transfer chamber 600 to move in the direction where the transfer gate valve 620 is located. In this case, when the substrate is transferred between the transfer chamber 600 and other chambers, the two chambers and the outer or inner chamber between them can be evacuated simultaneously, so that the pressure of the two chambers is equivalent to that of the outer or inner chamber, thereby opening the gate valves of the two chambers to transfer the substrate.

[0106] In one embodiment, see Figure 3 The etching system also includes a loading / unloading cavity 800. The loading / unloading cavity 800 is used to load and unload the substrate.

[0107] Specifically, the loading / unloading cavity 800 may include a loading / unloading section 810. The loading / unloading cavity 800 may also be connected to a vacuum system, which may also be located within the peripheral cavity 700.

[0108] When the substrate is transferred from the outside to the etching system, the loading / unloading section 810 of the loading / unloading cavity 800 can be opened first. The substrate is then placed inside the loading / unloading cavity 800. The loading / unloading section 810 is then closed. A second substrate placement device (not shown) can be installed inside the loading / unloading cavity 800. The second substrate placement device can include multiple second substrate placement stages, which can be arranged vertically from top to bottom. One substrate can be placed on each second substrate placement stage.

[0109] Meanwhile, the loading / unloading chamber 800 has a loading / unloading gate valve 820 on the side facing the transfer chamber 600. When the loading / unloading gate valve 820 is closed, it isolates the interior of the loading / unloading chamber 800 from the outside. At the same time, substrate transfer can be performed between the loading / unloading chamber 800 and the transfer chamber 600.

[0110] The loading and unloading section 810 is arranged opposite to the loading and unloading gate valve 820, so that substrates can be conveniently transferred to the outside and to the transfer chamber 600 on opposite sides of the loading and unloading chamber 800.

[0111] Specifically, the loading / unloading section 810 can be configured as a gate valve or in other forms (such as a window), and there is no limitation on this. Alternatively, the loading / unloading section 810 may not be provided. In this case, the loading / unloading cavity 800 can be configured to rotate, thereby realizing the transfer of substrate between the loading / unloading cavity 800 and the outside, and the transfer of substrate between the loading / unloading cavity 800 and the transfer cavity 600, respectively, by having the loading / unloading gate valve 820 in different positions.

[0112] As an example, the transfer cavity 600 can be located in the middle area. The loading / unloading cavity 800, the etching cavity 100, the detection cavity 200, and the deposition cavity 300 can surround the transfer cavity 600.

[0113] Specifically, the loading / unloading cavity 800, etching cavity 100, detection cavity 200, and deposition cavity 300 can be located between the vertices of a regular polygon, while the transfer cavity 600 is located at the center of the polygon. Alternatively, the loading / unloading cavity 800, etching cavity 100, detection cavity 200, and deposition cavity 300 can be located at different positions on the same circle, while the transfer cavity 600 is located at the center of the circle. In this case, it can be ensured that the robotic arm 610 within the transfer cavity 600 can transport the substrate at equal distances. This allows for fast and precise substrate transfer.

[0114] Furthermore, the loading / unloading cavity 800, etching cavity 100, detection cavity 200, and deposition cavity 300 can all be located within the peripheral cavity 700. The detection control module 420 of the optical detection device 400 and the central control device 500 can be located outside the peripheral cavity 700. Specifically, the two can be integrated together.

[0115] In one embodiment, see Figure 4 The etching system also includes a test chamber 900, which is used to test the performance of the product formed on the substrate during and / or after deposition. As an example, the deposition method can be epitaxial growth deposition.

[0116] The test chamber 900 has a test gate valve 910 on the side facing the transfer chamber. When the test gate valve 910 is closed, it isolates the interior of the test chamber 900 from the outside, allowing testing to be performed in a closed environment and preventing the test from being affected by external interference signals. At this time, the loading / unloading chamber 800, etching chamber 100, detection chamber 200, deposition chamber 300, and test chamber 900 can be arranged around the transfer chamber 600.

[0117] Test chamber 900 can also be connected to a vacuum system, thereby protecting the test from interfering gases and improving test accuracy. Furthermore, connecting test chamber 900 to a vacuum system also prevents contamination of products deposited on the substrate.

[0118] In one embodiment, during the deposition process in the deposition chamber 300, the central control device 500 controls the deposition chamber 300 to pause deposition and controls the robotic arm 610 to transport the substrate from the deposition chamber 300 to the test chamber 900 to detect the performance of the product formed on the substrate during the deposition process; and determines whether to continue or terminate deposition based on the detection results.

[0119] When the test results meet the test standards, the control unit 300 controls the robot arm 610 to transport the substrate from the test chamber 900 back to the deposition chamber 300, and controls the deposition chamber 300 to continue deposition. When the test results do not meet the test standards, the control unit 300 controls the robot arm 610 to transport the substrate from the test chamber 900 to the loading and unloading chamber, and then out of the etching system, thereby terminating the deposition process.

[0120] And / or, at the end of deposition in the deposition chamber, the central control device 500 controls the robotic arm 610 to transport the substrate from the deposition chamber 300 to the test chamber 900 to test the performance of the product formed on the substrate after deposition.

[0121] In existing technologies, the deposition process is usually separated from the testing process, and testing is typically performed after deposition. In this case, it is impossible to test the product performance during the deposition process.

[0122] In this embodiment, the deposition chamber 300 and the test chamber 900 can be evacuated to the same vacuum environment, allowing the product in the deposition chamber 300 to be transferred to the test chamber 900 for testing during the deposition process. This enables the detection of product performance under high-temperature deposition conditions, allowing for early prediction of product qualification, improving overall product growth efficiency, and also enabling the detection of product performance after deposition.

[0123] In one embodiment, an etching system is also provided; see [link to relevant documentation]. Figure 5 It includes a loading and unloading chamber 800, a stripping chamber 1000, a cleaning and drying chamber 1100, an etching chamber 100, a detection chamber 200, a deposition chamber 300, a testing chamber 900, a transfer chamber 600, a peripheral chamber 700, and a central control device 500.

[0124] The loading / unloading chamber 800, stripping chamber 1000, cleaning and drying chamber 1100, etching chamber 100, detection chamber 200, deposition chamber 300, testing chamber 900, and transfer chamber 600 are all independently connected to different vacuum pumping devices and are all located within the peripheral chamber 700. The peripheral chamber 700 is connected to another independent vacuum pumping device. The number of loading / unloading chamber 800, stripping chamber 1000, cleaning and drying chamber 1100, etching chamber 100, detection chamber 200, deposition chamber 300, and testing chamber 900 can be one or more.

[0125] A loading / unloading chamber 800 is provided with a loading / unloading gate valve 820 on the side facing the transfer chamber 600. Additionally, the loading / unloading chamber 800 may also be provided with a loading / unloading part 810 opposite to the loading / unloading gate valve 820. A stripping chamber 1000 may be provided with a stripping gate valve 1010 on the side facing the transfer chamber 600. A cleaning gate valve 1110 may be provided with a cleaning gate valve 1110 on the side facing the transfer chamber 600. An etching chamber 100 has an etching gate valve 110 on the side facing the transfer chamber 600. A detection chamber 200 has a detection gate valve 210 on the side facing the transfer chamber 600. A deposition chamber 300 has a deposition gate valve 310 on the side facing the transfer chamber 600. A test chamber 900 has a test gate valve on the side facing the transfer chamber 600. The transfer chamber 600 has a transfer gate valve 620, which isolates the interior of the transfer chamber 600 from the exterior when closed.

[0126] As an example, during use, the etching system can either load or unload an epitaxial wafer heterogeneously grown on a substrate via the loading / unloading unit 810, or deposit an epitaxial wafer heterogeneously grown on a substrate within the deposition chamber 300. The stripping chamber 1000 can peel the epitaxial wafer grown on the substrate from the substrate. Specifically, the stripping chamber 1000 may include a stripping sub-chamber for laser stripping, or a separation sub-chamber for separating the epitaxial wafer from the substrate after laser stripping. The separation sub-chamber may be equipped with an acid pickling device. The acid pickling device may contain an acid pickling solution, which reacts with the substances formed by the decomposition of the epitaxial wafer, thereby separating the substrate from the epitaxial wafer. The cleaning and drying chamber 1100 can clean and dry the stripped epitaxial wafer. The etching chamber 100 can etch the stripped epitaxial wafer. The detection chamber 200 can detect the etching results of the stripped epitaxial wafer. Specifically, the detection chamber 200 may be equipped with an optical module 410. The optical module 410, under the control of the detection control module 420 outside the detection cavity 200, detects the etching results of the epitaxial wafer. Simultaneously, the detection control module 420 is electrically connected to the central control device 500. The central control device 500 controls the epitaxial wafer within the detection cavity to enter either the deposition cavity or the etching cavity based on the substrate etching results. The deposition cavity 300 can perform epitaxial deposition on the detected epitaxial wafer within the detection cavity 200. The test cavity 900 can test the performance of the homogeneous epitaxial product formed on the deposition and / or post-deposition epitaxial wafer. The central control device 500 controls the rotation of the transfer cavity 600 and moves it in the direction where it is equipped with a transfer gate valve, thereby aligning the transfer cavity 600 with and approaching other chambers, thus transferring the substrate between these chambers.

[0127] The above example illustrates one possible use of the etching system in this embodiment. It is understood that the various chambers of the etching system may be used in other sequences, and this is not a limitation.

[0128] In one embodiment, an etching method includes:

[0129] In step S100, the substrate is placed into the transfer chamber 600 by the robotic arm 610 through the transfer gate valve 620, and the transfer gate valve 620 is closed.

[0130] Step S200: Rotate the transfer chamber 600 so that the transfer gate valve 620 is opposite to the etching gate valve 110.

[0131] Step S300: In a vacuum environment, open the transfer gate valve and the etching gate valve 110, and use the robot arm 610 to transport the substrate from the transfer chamber to the etching chamber, and close the transfer gate valve 620 and the etching gate valve 110.

[0132] Step S400: Etch the substrate in the etching cavity 100;

[0133] In step S500, under vacuum conditions, the transfer gate valve 620 and the etching gate valve 110 are opened, and the substrate is transported from the etching chamber 100 to the transfer chamber 600 by the robot arm 610. Then the transfer gate valve 620 and the etching gate valve 110 are closed.

[0134] Step S600: Rotate the transmission chamber 600 so that the transmission gate valve 620 is opposite to the detection gate valve 210;

[0135] In step S700, under vacuum conditions, the transfer gate valve 620 and the detection gate valve 210 are opened, and the substrate is transported from the transfer chamber 600 to the detection chamber 200 by the robot arm 610. Then the transfer gate valve 620 and the detection gate valve 210 are closed.

[0136] In step S800, a detection beam is sent to the substrate within the detection cavity 200, and a feedback beam from the substrate is received to detect the etching effect.

[0137] In step S100, as an example, the epitaxial wafer growth system may further include a loading / unloading cavity 800. In this case, step S100 may specifically include:

[0138] In step S110, the substrate is placed from the loading / unloading section 810 into the loading / unloading cavity 800, and the loading / unloading cavity 800 is closed.

[0139] Step S120: Clean the substrate within the loading / unloading cavity 800;

[0140] In step S130, under vacuum conditions, the transfer gate valve 620 and the loading / unloading gate valve 820 are opened, and the substrate is transported from the loading / unloading chamber 800 to the transfer chamber 600 by the robot arm 610. Then, the transfer gate valve 620 and the loading / unloading gate valve 820 are closed.

[0141] Specifically, in step S110, the substrate can be a nitride single crystal substrate, etc.

[0142] In step S120, nitrogen gas can be injected into the loading / unloading chamber 800 through the nitrogen gas filling pipeline. Using nitrogen gas to clean the substrate can remove impurity particles that have adhered to the substrate during transportation. The cleaning time can be 30 seconds to 5 minutes.

[0143] While nitrogen is being introduced into the loading / unloading chamber 800, a vacuum can be evacuated from the chamber. This serves two purposes: firstly, it prevents nitrogen from entering and increasing the pressure inside the loading / unloading chamber 800; secondly, it removes impurity particles purged by nitrogen, thus keeping the substrate in a clean environment and preventing it from being recontaminated.

[0144] After stopping the nitrogen filling, the loading and unloading chamber 800 can be evacuated using a vacuum pump. Evacuation can be stopped when the vacuum level reaches 0.1-0.5 Pa.

[0145] In step S130, the transfer cavity 600 can be evacuated. To save process time, the evacuation of the transfer cavity 600 can begin simultaneously with the evacuation of the loading / unloading cavity 800 in step S120.

[0146] When the pressure in the transfer chamber 600 is equivalent to the pressure in the loading / unloading chamber 800, under the control and drive of the central control device 500, the transfer gate valve 620 of the transfer chamber 600 can be moved towards the loading / unloading gate valve 820 of the loading / unloading chamber 800 to make contact and connect, and then both can be opened. Afterwards, the substrate in the loading / unloading chamber 800 can be taken out and transported to the transfer chamber 600 using the robotic arm 610.

[0147] After the substrate is removed from the loading / unloading chamber 800, the loading / unloading gate valve 820 of the loading / unloading chamber 800 and the transfer gate valve 620 of the transfer chamber 600 are closed. Then, under the control and drive of the central control device 500, the transfer gate valve 620 of the transfer chamber 600 can be moved away from the loading / unloading chamber 800 until it returns to its original position.

[0148] In step S200, the transmission chamber 600 can be rotated by the central control device 500, thereby changing the direction of the transmission gate valve 620 so that the transmission gate valve 620 is opposite to the etching gate valve 110.

[0149] In step S300, the etching chamber 100 can be evacuated. When the pressure in the etching chamber 100 is comparable to the pressure in the transfer chamber, under the control and drive of the central control device 500, the transfer gate valve 620 of the transfer chamber 600 can be moved towards the etching gate valve 110 of the etching chamber 100 to make contact and connect, and then both can be opened. Afterwards, the substrate in the transfer chamber 600 can be removed and transported to the etching chamber 100 using the robotic arm 610.

[0150] In step S400, multiple etching cavities 100 are provided in the entire system. The multiple etching cavities 100 include at least one high-density etching cavity with a high-density plasma etching device and one low-density etching cavity with a low-density plasma etching device.

[0151] Based on the distribution of multiple etching cavities, the substrate can first be sent to the high-density etching cavity of the high-density plasma etching equipment. Compared with low-density plasma etching equipment, high-density plasma etching equipment has the characteristics of fast etching speed and relatively rough etching, and is suitable for substrate thinning and initial etching and rapid etching of substrate wafers. Low-density plasma etching equipment, on the other hand, can etch the substrate wafer more finely, refining the etching and controlling the etching pattern. After the initial etching, the substrate is sent to the low-density etching cavity of the low-density plasma etching equipment. Specifically, the thinning thickness, etching depth, and surface morphology can be determined according to the substrate thickness, device type, etc.

[0152] Alternatively, depending on the device type and substrate thickness, if high-density plasma etching equipment is not required for etching, the substrate can be directly transferred from the transfer cavity 600 to the low-density etching cavity where the low-density plasma etching equipment is located via a control device.

[0153] During the transfer of the substrate to each etching chamber, the robotic arm 610 in the transfer chamber 600 transfers the substrate to the corresponding chamber. During the transfer process, the corresponding vacuum device in each chamber can be used to evacuate the chamber, ensuring that the pressure in each chamber is equal to the pressure in the transfer chamber before opening the gate valve. This allows for convenient opening of the gate valve, and after the substrate is transported to the corresponding chamber, the corresponding gate valve can be closed, maintaining a stable and sealed environment and atmosphere within the chamber.

[0154] In step S500, the substrate transfer process between the etching cavity 100 and the transfer cavity 600 can be similar to the substrate transfer process between the loading / unloading cavity 800 and the transfer cavity 600 in step S130.

[0155] In step S600, the rotating transfer cavity can be used in a manner similar to that in step S200.

[0156] In step S700, the substrate transfer process between the transfer cavity 600 and the detection cavity 200 can be similar to the substrate transfer process between the transfer cavity 600 and the etching cavity 100 in step S300.

[0157] In step S800, the detection cavity 200 can be used to detect the etching effect and reduce the temperature of the substrate during the detection process so as not to affect the subsequent deposition steps.

[0158] Specifically, the etching effect can be detected by the optical inspection device 400. During inspection by the optical inspection device 400, the light-emitting control unit 422 of the inspection and analysis module 420 controls the light source unit 421 to provide a light source to the light-emitting unit 411 of the optical module 410 located within the inspection cavity 200. The light-emitting unit 411 sends a detection beam to the substrate. The light-receiving unit 412 of the optical module 410 receives the feedback beam from the substrate and converts it into an electrical signal. Then, the analysis unit 423 of the inspection and analysis module 420 analyzes the etching effect of the substrate based on the electrical signal.

[0159] In specific testing, one or more measurements can be performed at one location on the substrate to meet the requirements of process monitoring. Simultaneously, the incident point of the optical path of the optical module 410 can be changed to measure different locations on the substrate.

[0160] The analysis unit 423 can use specialized testing software (such as a tool software corresponding to the optical inspection device 400) to obtain information about the physical parameters of the substrate after etching, such as the critical dimensions of the substrate, film thickness, etching depth, surface roughness, and the distribution of etch pits. By analyzing the physical parameters of the etched substrate, information about the uniformity of the etching process can be provided. Based on these results, the effectiveness of thinning and / or etching in the etching cavity can be fed back, and it can be determined whether to proceed to the next deposition step.

[0161] If the etching effect is unsatisfactory and does not meet the process requirements, the substrate in the detection cavity 200 can be removed and put back into the etching cavity 100 for re-etching until it meets the process requirements.

[0162] If the etching effect is poor and seriously fails to meet the standards, it can be scrapped directly.

[0163] If the etching is successful, the substrate can be removed from the detection chamber 200 and then transported to the deposition chamber 300 for further deposition or epitaxial growth processing after etching.

[0164] The number of deposition chambers 300 can be one or more. When there are multiple deposition chambers 300, each deposition chamber 300 can be equipped with a deposition gate valve 310, and each deposition chamber 300 can be connected to a vacuum system. The vacuum systems of each deposition chamber 300 can be independent of each other.

[0165] Specifically, the deposition methods in each deposition chamber 300 may include metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and atomic layer deposition (ALD). Depending on the type of device formed and the layer structure deposited, a robotic arm 610 can be used to control the transport of the substrate within different deposition chambers 300.

[0166] The deposition chamber 300 may contain a growth stage, and the chamber may have an air inlet. When the substrate is fed into the deposition chamber, a vacuum may be drawn depending on the device type. Then, depending on the gas used for deposition or epitaxial growth, different gases are introduced through the air inlet.

[0167] The deposition chamber 300 may also include multiple infrared pyrometry detectors, which can be used to measure the temperature of the center and edge of the substrate during deposition or epitaxial growth, as well as the temperature of the sidewalls of the deposition chamber 300.

[0168] The substrate can be placed in the test chamber for testing during or after deposition in the deposition chamber 300.

[0169] Specifically, during the deposition process in the deposition chamber 300, the central control equipment 500 controls the deposition chamber 300 to pause deposition and controls the robotic arm 610 to transport the substrate from the deposition chamber 300 to the test chamber 900 to detect the performance of the product formed on the substrate during the deposition process; and determines whether to continue or terminate deposition based on the test results.

[0170] When the test results meet the test standards, the control unit 300 controls the robot arm 610 to transport the substrate from the test chamber 900 back to the deposition chamber 300, and controls the deposition chamber 300 to continue deposition. When the test results do not meet the test standards, the control unit 300 controls the robot arm 610 to transport the substrate from the test chamber 900 to the loading and unloading chamber, and then out of the etching system, thereby terminating the deposition process.

[0171] And / or, at the end of deposition in the deposition chamber, the central control device 500 controls the robotic arm 610 to transport the substrate from the deposition chamber 300 to the test chamber 900 to test the performance of the product formed on the substrate after deposition.

[0172] After deposition or testing is completed, the substrate can be removed from the deposition chamber 300 or the testing chamber and transferred to the loading / unloading chamber 800. The loading / unloading gate valve 820 in the loading / unloading chamber 800 is closed. Then, nitrogen gas is introduced into the loading / unloading chamber 800 to ensure that the pressure is consistent with the external pressure. At this point, the loading / unloading section 810 on the other side of the loading / unloading chamber 800 is opened to transport the processed substrate out.

[0173] In the above embodiments, etching is performed first, followed by deposition. However, this application is not limited to this. For example, in some embodiments, deposition can be performed first in the deposition chamber 300, and then the deposited substrate can be placed into the etching chamber 100 for etching.

[0174] In the description of this specification, references to terms such as "some embodiments," "other embodiments," "one embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0175] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0176] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An etching system, characterized in that, include: Etching chamber, used for etching the substrate; The detection chamber is used to detect the etching results of the substrate; wherein, the detection chamber is also provided with a first substrate placement device and a cooling device, the cooling device is used to cool the etched substrate, the cooling device includes a cooling pipe, the first substrate placement device includes a plurality of first substrate placement stages arranged vertically from top to bottom, each first substrate placement stage holds one substrate, and the cooling pipe is provided under the first substrate placement stage; A deposition chamber is used to deposit material onto the substrate after it has been detected in the detection chamber; An optical inspection device includes an optical module and a detection control module. The optical module is located inside the detection cavity and is used to detect the etching result of the substrate under the control of the detection control module. The substrate is in a vacuum state when it is transferred between the etching cavity, the deposition cavity, and the detection cavity. The central control device is electrically connected to the detection and control module and is used to control the substrate in the detection cavity to enter the deposition cavity or the etching cavity according to the etching result of the substrate; The test chamber is used to perform performance testing on the product formed on the substrate during and after deposition; wherein, during the deposition process, the deposition chamber and the test chamber are evacuated to the same vacuum environment so that the product in the deposition chamber can be transported to the test chamber for testing.

2. The etching system according to claim 1, characterized in that, The etching system includes at least two etching cavities, the at least two etching cavities including a low-density etching cavity and a high-density etching cavity; The central control device is also used to control the substrate to enter the low-density etching cavity and / or the high-density etching cavity according to the substrate state.

3. The etching system according to claim 1 or 2, characterized in that, The optical module includes a light emitting unit and a light receiving unit. The light emitting unit is used to send a detection beam to the substrate, and the light receiving unit is used to receive the feedback beam from the substrate and convert the feedback beam into an electrical signal. The detection and control module includes a light source unit, a light emission control unit, and an analysis unit. The light emission control unit is electrically connected to the light source unit and is used to control the light source unit to provide a light source for the light emission unit. The analysis unit is electrically connected to the light receiving unit and is used to analyze the etching results of the substrate based on the electrical signal.

4. The etching system according to claim 1 or 2, characterized in that, The detection chamber is also equipped with: A temperature detection device is used to detect the temperature of the substrate.

5. The etching system according to claim 1 or 2, characterized in that, The etching system further includes a transfer cavity with a transfer gate valve. When the transfer gate valve is closed, it isolates the interior of the transfer cavity from the outside. A robotic arm is installed inside the transfer cavity. The central control device controls the rotation of the transfer cavity, or the central control device controls the rotation of the transfer cavity and controls the transfer cavity to move in the direction in which the transfer gate valve is located. Furthermore, when the pressure in the transmission chamber is the same as that in the corresponding other chambers, the central control device controls the transmission gate valve to open.

6. The etching system according to claim 1 or 2, characterized in that, The etching system further includes a transfer cavity with a transfer gate valve. When the transfer gate valve is closed, it isolates the interior of the transfer cavity from the outside. A robotic arm is installed inside the transfer cavity. The central control device controls the rotation of the transfer cavity, or the central control device controls the rotation of the transfer cavity and controls the transfer cavity to move in the direction in which the transfer gate valve is located. Furthermore, when the pressure in the transmission chamber is the same as that in the corresponding other chambers, the central control device controls the transmission gate valve to open.

7. The etching system according to claim 5, characterized in that, The etching system also includes a peripheral cavity, in which the transfer cavity, the etching cavity, the detection cavity, and the deposition cavity are all located. The peripheral cavity is also connected to a vacuum system. Alternatively, the etching chamber, the detection chamber, and the deposition chamber may form an inner cavity, with the transfer chamber located within the inner cavity, which is also connected to a vacuum system.

8. The etching system according to claim 5, characterized in that, The test chamber has a test gate valve, which isolates the interior of the test chamber from the outside when the test gate valve is closed.

9. The etching system according to claim 8, characterized in that, During the deposition process in the deposition chamber, the central control equipment controls the deposition chamber to pause deposition and controls the robotic arm to transport the substrate from the deposition chamber to the test chamber to detect the performance of the product formed on the substrate during the deposition process; and determines whether to continue or terminate deposition based on the detection results. When the deposition in the deposition chamber is completed, the central control device controls the robotic arm to transport the substrate from the deposition chamber to the test chamber to detect the performance of the product formed on the substrate after deposition.

10. The etching system according to claim 7, characterized in that, The etching system also includes a loading and unloading cavity located within the peripheral cavity for loading and unloading the substrate. The loading and unloading cavity has a loading and unloading gate valve on the side facing the transfer cavity. When the loading and unloading gate valve is closed, it isolates the interior of the loading and unloading cavity from the exterior.

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