A method for placing an ultrathin wafer into a grooved carrier disk
By using the Bernoulli principle to blow and suspend the ultra-thin wafer substrate and fit it into a grooved loading disk with air holes, the problem of ultra-thin wafer warping during processing is solved, and the stable placement of the wafer and the smooth progress of the subsequent process is achieved.
Patent Information
- Application Number
- CN202111672126.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-31
- Publication Date
- 2025-05-16
- Estimated Expiration
- 2041-12-31
AI Technical Summary
Ultra-thin wafers are prone to warping during processing, resulting in degradation of equipment performance, shutdown or dropping of equipment, and the existing dielectric layer film cannot effectively adjust stress in different directions.
The ultra-thin wafer substrate is blown flattened through a jet mechanism to suspend it, and then the grooved carrier disk with air holes is aligned with the ultra-thin wafer substrate, and the overall flip is 180°, so that the ultra-thin wafer substrate is fitted into the groove of the carrier disk.
The ultra-thin wafer is stably placed into the groove-type carrier disk to prevent warping and ensure the smooth progress of subsequent wafer processes.
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Figure CN114300409B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of semiconductor processing, in particular to a method for placing an ultra-thin wafer into a groove-type carrier. Background Art
[0002] To improve product performance, ultra-thin chip design is being used more and more widely. Usually, the thickness of integrated circuit wafers is about 1 mm. If it is thinned to less than 100 microns, the wafer will bend and deform, which is particularly obvious on large-diameter wafers. In the current wafer manufacturing process, since it is difficult to thin compound semiconductors, the thickness of compound semiconductor substrates is minimized when making compound semiconductor substrates, resulting in particularly obvious bending and deformation of compound semiconductor substrates.
[0003] Warped wafers will have adverse effects on equipment performance, stability, line width control and other parameters in multiple process steps. First of all, the wafer, for example, the wafer coating and development process is usually completed by rotating the base with the wafer adsorbed by the centrifuge. However, if the wafer is warped in the previous process, the base will not be able to completely absorb the wafer, causing the equipment to shut down due to the weak adsorption force during the rotation process, or even the wafer will fall off, causing unnecessary losses.
[0004] In the current technology, a dielectric layer is usually deposited on the top or back of the wafer, and the dielectric layer is annealed at high temperature to neutralize or offset the stress of the wafer. However, since the dielectric layer is deposited uniformly, the change in stress in each direction is the same, which cannot meet the requirements of adjusting stress in different directions. Summary of the invention
[0005] In order to solve the deficiencies mentioned in the above-mentioned background technology, the purpose of the present invention is to provide a method for placing an ultra-thin wafer into a groove-type carrier. The present invention utilizes the Bernoulli principle to blow the ultra-thin wafer substrate flat from bottom to top and make it suspended, and then places the groove-type carrier with air holes above the ultra-thin wafer substrate. After the groove of the carrier is aligned with the ultra-thin wafer substrate, the carrier and the ultra-thin wafer substrate are quickly flipped 180° as a whole, so that the ultra-thin wafer substrate is embedded in the groove of the carrier, thereby realizing the placement of the thin wafer substrate into the groove-type carrier, and at the same time preventing the warping of the ultra-thin wafer substrate, so as to carry out subsequent wafer processing.
[0006] The purpose of the present invention can be achieved by the following technical solutions:
[0007] A method for placing an ultra-thin wafer into a groove-type carrier comprises the following steps:
[0008] (1) placing an ultra-thin wafer substrate on a robotic arm with an air-jet mechanism, and blowing air through the robotic arm to suspend the ultra-thin wafer substrate above the robotic arm;
[0009] (2) using a mechanical arm with a clamping mechanism to clamp the grooved carrier, with the concave surface of the grooved carrier facing downward, aligning the grooved carrier with the ultra-thin wafer substrate from above, and then fitting the ultra-thin wafer substrate with the grooved carrier;
[0010] (3) After the mating is completed, the clamping robot arm and the jet robot arm are turned 180 degrees as a whole, the ultra-thin wafer substrate is placed on the carrier, and the jet robot arm is removed.
[0011] Further preferably, steps (1)-(3) are all completed in a negative pressure operation box, and a negative pressure exhaust device is connected to the bottom of the operation box.
[0012] Further preferably, in step (1), the robot arm with the air jet mechanism uses the Bernoulli principle to flatten the warped ultra-thin wafer substrate and make it suspend.
[0013] Further preferably, in step (2), the bottom of the groove of the groove-type carrier is provided with evenly distributed small holes to avoid uneven stress caused by uneven airflow distribution during engagement.
[0014] Beneficial effects of the present invention:
[0015] The present invention utilizes the Bernoulli principle to blow the ultra-thin wafer substrate flat from bottom to top and make it suspended, and then places a groove-type carrier with air holes above the ultra-thin wafer substrate. After the groove of the carrier is aligned with the ultra-thin wafer substrate, the carrier and the ultra-thin wafer substrate are quickly turned 180 degrees as a whole, so that the ultra-thin wafer substrate is embedded in the groove of the carrier, and the thin wafer substrate is placed in the groove-type carrier, while preventing the ultra-thin wafer substrate from warping, so as to carry out subsequent wafer processing. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The present invention will be further described below in conjunction with the accompanying drawings.
[0017] Figure 1 is a schematic diagram of process step (1) of the present invention;
[0018] Figure 2 is a schematic diagram of process step (2) of the present invention;
[0019] Figure 3 It is a schematic diagram of process step (3) of the present invention. DETAILED DESCRIPTION
[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0021] like Figure 1-3 As shown, a method for placing an ultra-thin wafer into a groove-type carrier comprises the following steps:
[0022] (1) placing an ultra-thin wafer substrate on a robotic arm with an air-jet mechanism, and blowing air through the robotic arm to suspend the ultra-thin wafer substrate above the robotic arm;
[0023] (2) using a mechanical arm with a clamping mechanism to clamp the grooved carrier, with the concave surface of the grooved carrier facing downward, aligning the grooved carrier with the ultra-thin wafer substrate from above, and then fitting the ultra-thin wafer substrate with the grooved carrier;
[0024] (3) After the mating is completed, the clamping robot arm and the jet robot arm are turned 180 degrees as a whole, the ultra-thin wafer substrate is placed on the carrier, and the jet robot arm is removed.
[0025] Steps (1)-(3) are all completed in a negative pressure operating box, and the bottom of the operating box is connected to a negative pressure exhaust device.
[0026] In step (1), the robot arm with the air jet mechanism uses the Bernoulli principle to blow the warped ultra-thin wafer substrate flat and make it levitate.
[0027] In step (2), evenly distributed small holes are opened at the bottom of the groove of the groove-type carrier to avoid uneven stress caused by uneven airflow distribution during insertion.
[0028] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0029] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.
Claims
1. A method for placing an ultra-thin wafer into a groove-type carrier, characterized in that: The following steps are involved: Step (1), placing the ultra-thin wafer substrate on a robot arm with an air-jet mechanism, and blowing air through the robot arm to suspend the ultra-thin wafer substrate above the robot arm; Step (2), using a mechanical arm with a clamping mechanism to clamp the grooved carrier, with the concave surface of the grooved carrier facing downward, aligning the ultra-thin wafer substrate from above, and then fitting the ultra-thin wafer substrate and the grooved carrier; Step (3), after the fitting is completed, the clamping robot arm and the jet robot arm are turned 180 degrees as a whole, the ultra-thin wafer substrate is placed on the carrier, and the jet robot arm is removed; In the step (1), the robot arm with the air jet mechanism uses the Bernoulli principle to blow the warped ultra-thin wafer substrate flat and make it levitate; In the step (2), evenly distributed small holes are opened at the bottom of the groove of the groove-type carrier to avoid uneven stress caused by uneven airflow distribution during insertion.
2. The method for placing an ultra-thin wafer into a groove-type carrier according to claim 1, characterized in that: Steps (1)-(3) are all completed in a negative pressure operating box, and the bottom of the operating box is connected to a negative pressure exhaust device.
Citation Information
Patent Citations
Turnover mechanism and manufacturing method thereof
CN109860089A
Processing technology of ultrathin semiconductor substrate
CN113707564A
Substrate inverting device, substrate inverting method, and peeling system
US20130292062A1