Substrate polishing edge uniformity control using second fluid distribution

Abstract

A method and apparatus for dispensing polishing liquid onto a polishing pad within a chemical mechanical polishing (CMP) system is disclosed herein. In particular, embodiments herein relate to a CMP system having a first fluid delivery arm and a second fluid delivery arm disposed above a polishing pad to dispense a liquid, such as a polishing liquid or water. The first fluid delivery arm is disposed to exceed at least 50% of the radius of the polishing pad, while the second fluid delivery arm is disposed to exceed less than 50% of the radius of the polishing pad. The second fluid delivery arm is configured to dispense a polishing liquid or water onto the polishing pad to affect the polishing rate at the edge of the substrate.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to chemical mechanical polishing (CMP) systems for manufacturing semiconductor devices. Specifically, the embodiments herein relate to apparatus and methods for uniformly removing material at substrate edges during CMP processing. Background Technology

[0002] Chemical mechanical polishing (CMP) is commonly used in the fabrication of semiconductor devices to planarize or polish material layers deposited on substrate surfaces. In a typical CMP process, the substrate is held in a substrate carrier, which presses the back side of the substrate against a rotating polishing pad in the presence of a polishing slurry. Typically, the polishing slurry contains an aqueous solution of one or more chemical components and nanoscale abrasive particles suspended in the aqueous solution. Material is removed from the entire surface of the substrate material layer in contact with the polishing pad through a combination of chemical and mechanical activity provided by the relative motion of the polishing slurry and the substrate with the polishing pad.

[0003] Polishing slurry is typically distributed onto the polishing pad from the first arm toward the center, causing it to move toward the outer edge of the pad as it rotates. The slurry often accumulates near the substrate edge beneath the substrate carrier. This accumulation near the substrate edge leads to uneven substrate material removal profiles and increases or decreases the removal rate near the edge. Even when the slurry is uniformly distributed beneath the substrate, the interaction between the substrate and the retaining rings of the substrate carrier during CMP processing can still cause unevenness near the substrate edge.

[0004] Therefore, there is a need in this field for products and related methods to solve the above problems. Summary of the Invention

[0005] This disclosure generally relates to a chemical mechanical polishing apparatus. More specifically, this disclosure relates to a first fluid dispensing arm and a second fluid dispensing arm for dispensing polishing fluid. In one embodiment, an apparatus for processing a substrate is disclosed, the apparatus including a pad disposed on a worktable, wherein the pad has a pad radius and a central axis extending from the central axis. The apparatus further includes: a carrier assembly configured to be disposed on a surface of the pad and having a carrier radius extending from a rotation axis of the carrier assembly, wherein the rotation axis is disposed at a first radial distance from the central axis; a first fluid delivery arm having a first nozzle configured to provide a first fluid to a first point on the pad at a second radial distance from the central axis; and a second fluid delivery arm having a second nozzle configured to provide a second fluid to a second point on the pad, the second point being disposed at a third radial distance from the central axis, wherein the second radial distance is less than the first radial distance and the third radial distance is greater than or equal to the second radial distance.

[0006] In another embodiment of this disclosure, an apparatus for processing a substrate includes: a worktable; a pad disposed on the worktable, the pad having a pad radius extending from a central axis; a carrier assembly disposed on the pad, the carrier assembly having a carrier radius extending from a rotation axis of the carrier assembly; a first fluid delivery arm extending beyond at least 50% of the pad radius; and a second fluid delivery arm extending beyond less than 60% of the pad radius. The first fluid delivery arm is configured to provide a first fluid to a first point on the pad, while the second fluid delivery arm is configured to provide a second fluid to a second point on the pad. The second point is located at a radial distance from the central axis, the radial distance being greater than approximately 40% of the pad radius.

[0007] In another embodiment of this disclosure, the method of polishing a substrate includes: pressing the substrate against the surface of a pad of a polishing system using a carrier assembly, wherein the pad has a pad radius and a central axis, the pad radius extending from the central axis. The carrier assembly is translated across the surface of the pad while rotating about a rotation axis, wherein translating the carrier assembly across the surface of the pad causes a first radial distance, measured from the central axis to the rotation axis, to vary between a first radial value and a second radial value as the carrier assembly translates across the surface of the pad. A first fluid is dispensed from a first fluid delivery arm onto the pad at a first temperature and a first flow rate, wherein the first fluid is delivered onto the pad at a second radial distance measured from the central axis. A second fluid is dispensed from a second fluid delivery arm onto the pad at a second flow rate and a second temperature, wherein the second fluid is delivered onto the pad at a third radial distance measured from the central axis, such that the second fluid is delivered to a portion of the substrate at a distance of at least 40% of the pad radius from the central axis of the pad. The dispensing of the second and first fluids is stopped.

[0008] In yet another embodiment of this disclosure, the method of polishing a substrate includes: pressing the substrate against the surface of a pad of a polishing system using a carrier assembly, wherein the pad has a pad radius and a central axis, the pad radius extending from the central axis. The carrier assembly is translated across the entire surface of the pad while rotating about a rotation axis. A first fluid is dispensed from a first fluid delivery arm onto the pad at a first temperature and a first flow rate, wherein the first fluid is delivered onto the pad at a second radial distance measured from the central axis. A second fluid is dispensed from a second fluid delivery arm onto the pad at a second flow rate and a second temperature, wherein the second fluid is delivered onto the pad at a third radial distance measured from the central axis, such that the third radial distance is greater than the second radial distance. The dispensing of the second and first fluids is stopped. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting the scope of the embodiments, allowing for other equally effective embodiments.

[0010] Figure 1 This is a schematic side view of a polishing system according to one embodiment that can be used with the methods provided herein.

[0011] Figure 2 According to one embodiment Figure 1 A schematic plan view of the polishing system.

[0012] Figure 3A yes Figure 1 and Figure 2 A schematic side view of a portion of the polishing system.

[0013] Figure 3B yes Figure 3A A simplified schematic plan view of a part of the polishing system.

[0014] Figure 4 This means that in Figure 1-3B A diagram illustrating a method for distributing one or more fluids within a polishing system.

[0015] For ease of understanding, the same reference numerals are used as much as possible to denote common elements in the figures. It is contemplated that elements and features of one embodiment can be advantageously combined with those of other embodiments without further description. Detailed Implementation

[0016] Embodiments of this disclosure generally relate to apparatus and methods for improving the planarization uniformity of chemical mechanical polishing (CMP) processes by controlling the delivery of polishing slurry to a polishing pad within a CMP system. Specifically, embodiments herein relate to a CMP system having a first fluid delivery arm and a second fluid delivery arm disposed above a polishing pad for dispensing liquids, such as polishing slurry or water.

[0017] A first fluid delivery arm is positioned to deliver polishing slurry to an inner portion of the polishing pad, such that the first fluid delivery arm supplies polishing slurry to polish the substrate. A second fluid delivery arm is positioned to supply one or more polishing slurries and / or water to the polishing pad. The first and second fluid delivery arms are positioned to supply polishing slurry and / or water to different portions of the polishing pad. In some embodiments, the first fluid delivery arm supplies one or more polishing slurries and / or water near the center of the polishing pad, while the second fluid delivery arm supplies one or more polishing slurries and / or water near the outer edge of the polishing pad. The second fluid delivery arm may be configured to dispense fluid at a location on the polishing pad radially outward from the location where the first fluid delivery arm dispenses fluid. In some embodiments, the second fluid delivery arm is positioned such that fluid is dispensed over different portions of the polishing pad, which are in desired positions relative to the edge of the substrate when the substrate carrier pushes the substrate against the polishing pad. As the substrate and polishing pad rotate, the fluid dispensed by the second fluid delivery arm interacts with the fluid dispensed by the first fluid delivery arm to provide improved polishing results on the treated substrate.

[0018] As discussed further below, the second fluid delivery arm is movable and can move synchronously with the substrate carrier, such that the second fluid delivery arm delivers fluid to the polishing pad at a consistent distance from the substrate carrier as the substrate carrier moves relative to the polishing pad and the stage supporting the polishing pad. Alternatively, the second fluid delivery arm is configured to deliver fluid to the polishing pad at a desired radius that coincides with a desired position on the substrate carrier and the substrate. In some embodiments, the second fluid delivery arm moves to accommodate a positional change of the substrate carrier from a first carrier position to a second carrier position and delivers fluid to a portion of the polishing pad that intersects with a desired portion of the substrate carrier.

[0019] It has been found that the results of CMP processing can be controlled by changing the distribution and / or concentration of the polishing slurry disposed between the substrate and the polishing pad surface. In some embodiments, planarization uniformity is improved by changing the concentration of the polishing slurry near the substrate edge during polishing. A first fluid delivery arm is typically used to provide polishing slurry dispersed throughout the polishing pad and under the entire substrate carrier. It has been found that polishing slurry accumulates between the retainer and the substrate under the substrate carrier edge closest to the polishing pad edge. Depending on the type of polishing slurry, its viscosity, composition, thickness of the accumulated slurry, the substrate speed or rotation, and the temperature of the polishing slurry, the accumulation of polishing slurry can accelerate or decelerate the polishing rate near the substrate edge.

[0020] The accumulation of polishing slurry near the substrate edge can be controlled by fluid delivery from both a first fluid delivery arm and a second fluid delivery arm. Since the first fluid delivery arm supplies fluid that will interact with the entire substrate, controlling the accumulation of polishing slurry near the substrate edge using fluid dispensed from the first fluid delivery arm is difficult. It has been found that when using the second fluid delivery arm, the concentration and quantity of one or more polishing slurries near the substrate edge can be better controlled. The second fluid delivery arm provides additional control parameters and can be positioned such that the fluid delivered from the second fluid delivery arm interacts directly with the fluid near the desired location on the substrate (e.g., the substrate edge) without interacting with other parts of the substrate (e.g., the interior or central portion of the substrate).

[0021] In embodiments where the dispensed liquid from the second fluid delivery arm includes polishing slurry, the amount of polishing slurry accumulating near the edges and / or other areas of the substrate may increase. In embodiments where the liquid dispensed by the second fluid delivery arm is water, the composition of the polishing slurry accumulating near the edges and / or other areas of the substrate is reduced because water dilutes the polishing slurry and disperses it from locations near the edges and / or other areas of the substrate. Typical polishing slurries used in CMP processes may include aqueous solutions of one or more chemical components and nanoscale abrasive particles suspended in the aqueous solution. Increases or decreases in fluid accumulation near the substrate edges and the concentration of fluid components (such as polishing slurry accumulation and the concentration of abrasive particles and / or polishing slurry chemical components) during CMP processes can accelerate or slow down the removal rate near the substrate edges.

[0022] The polishing rate at the substrate edge can be controlled by dispensing liquid from the second fluid delivery arm, through controlling the delivery of one or more fluids to desired locations relative to the substrate and polishing pad. In addition to the slurry delivered by the first delivery arm, the process of controlling the delivery of one or more fluids typically includes controlling the relative position of the delivery of one or more fluids relative to a region of the substrate. In some configurations, the process takes into account the geometry of the pad and / or stage and how the fluid travels along the polishing pad and beneath the substrate carrier to deliver fluid to desired portions of the substrate (such as the edges of the substrate) without significantly affecting the concentration and / or flow of the fluid through other areas of the substrate (such as the center of the substrate). In some embodiments, the substrate carrier rotation speed and the stage rotation speed can be varied. The rotation speed of both the stage and the substrate carrier assembly can affect the effectiveness of the polishing slurry on the polishing process. This can alter the processing outcome and be used to obtain a desired result. In some embodiments, the substrate carrier rotates at a speed of about 30 revolutions per minute (rpm) to about 165 rpm, such as about 50 rpm to about 150 rpm. In some embodiments, the substrate carrier assembly may remain stationary while the stage rotates. The stage can rotate at speeds from about 10 rpm to about 175 rpm, such as from about 35 rpm to about 160 rpm. In some embodiments, the substrate carrier and the stage can rotate at speeds higher or lower than those listed herein and can be adjusted to suit different polishing applications. While in some embodiments the substrate carrier and the stage both rotate at similar speeds, in other embodiments the substrate carrier and the stage rotate at different speeds, such that the substrate carrier rotates faster than the stage, or the stage rotates faster than the substrate carrier. In the embodiments disclosed herein, the edge of the substrate is defined as the outermost 10 mm of the substrate, such that the center portion of the substrate is the innermost 140 mm of the radius of a 300 mm substrate. The amount and type of one or more fluids delivered to the polishing pad by the second fluid delivery arm are controlled to achieve a more uniform substrate polishing result. The amount and type of fluid vary depending on the type of polishing to be performed. In some embodiments, a metering tool may be placed within the polishing system to measure the thickness of the substrate edge and determine the removal rate. The liquid dispensing from the second fluid delivery arm can then be controlled based on the removal rate measured by the metering tool.

[0023] Figure 1 This is a schematic side view of a polishing system 100 according to one embodiment, which can be used with the methods provided herein. Typically, the polishing system 100 is characterized by a frame (not shown) and a plurality of panels 101 defining a substrate processing environment 103. The polishing system 100 includes a plurality of polishing stations 102 (one shown) and a plurality of substrate carrier assemblies 104 (one shown) disposed within the substrate processing environment 103.

[0024] like Figure 1 As shown, the polishing station 102 includes a worktable 106, a polishing pad 105 mounted on and fixed to the worktable 106, a pad adjuster assembly 110 for cleaning and / or updating the polishing pad, a first fluid delivery arm 112 for dispensing polishing fluid onto the polishing pad 105, a second fluid delivery arm 138 for dispensing one or more fluids (e.g., polishing fluid or water) onto the polishing pad 105, a rotating substrate carrier assembly 104 configured to be disposed on the polishing pad 105, and a controller 160. The controller 160 is connected to each of the worktable 106, the pad adjuster assembly 110, the first fluid delivery arm 112, and the second fluid delivery arm 138. Here, the worktable 106 is disposed above a base plate 114 and surrounded by a worktable shield 120 (both shown in cross-section), the base plate 114 and the worktable shield 120 together defining a drain basin 116. The drain basin 116 is used to collect the fluid that rotates radially outward from the worktable 106 and to discharge the fluid through the discharge port 118 which is in fluid communication with the drain basin 116.

[0025] The pad adjuster assembly 110 is used to clean and / or refresh the polishing pad 105 by sweeping away polishing byproducts from the polishing pad 105 (such as with a brush (not shown)) and / or by pushing the polishing pad adjuster disc 124 (e.g., a diamond dip disc) against the polishing pad 105. The pad adjustment operation can be performed between polishing substrates (i.e., off-site adjustment), simultaneously with the polishing substrates (i.e., in-situ adjustment), or both.

[0026] Here, the pad adjuster assembly 110 includes a first adjuster actuator 126 disposed on a base plate 114, an adjuster arm 128 coupled to the first adjuster actuator 126, and an adjuster mounting plate 130 having an adjuster disk 124 fixedly coupled thereto. A first end of the adjuster arm 128 is coupled to the first adjuster actuator 126, and the mounting plate 130 is coupled to a second end of the adjuster arm 128 remote from the first end. The first adjuster actuator 126 is used to sweep the adjuster arm 128 about axis C and thus sweep the adjuster disk 124 such that when the polishing pad 105 rotates below the adjuster disk 124, the adjuster disk 124 oscillates between the inner radius and the outer radius of the polishing pad 105. In some embodiments, the pad adjuster assembly 110 further includes a second adjuster actuator 132 disposed at and coupled to a second end of the adjuster arm 128, the second adjuster actuator 132 being used to rotate the adjuster disk 124 about axis D. Typically, a shaft 133 disposed between the mounting plate 130 and the second adjuster actuator 132 is used to couple the mounting plate 130 to the second adjuster actuator 132.

[0027] Typically, as the stage 106 and polishing pad 105 rotate about the stage axis B below the stage 106 and polishing pad 105, the rotating substrate carrier assembly 104 sweeps back and forth across the entire desired area of ​​the stage 106. In some configurations, the substrate carrier assembly 104 rotates and moves radially relative to the polishing pad 105 and stage 106, such that the substrate carrier assembly 104 can move along the radius of the rotating polishing pad 105. In other configurations, the substrate carrier assembly 104 rotates and moves in an arcuate path relative to the center of the CMP polishing system (not shown), and thus across the polishing pad 105 and stage 106 in a non-radial direction. The substrate carrier assembly 104 is rotated and moved using a first actuator 170. The first actuator 170 is connected to the substrate carrier assembly 104 at a shaft, and the first actuator 170 may include a track or a set of tracks (not shown) such that the movement of the substrate carrier assembly 104 can cross the surface of the pad in a radial or arcuate path. Polishing slurry is delivered to the polishing pad 105 using a first fluid delivery arm 112 positioned above the polishing pad 105, and further delivered to the polishing interface between the polishing pad 105 and the substrate 148 by rotation of the polishing pad 105 about the stage axis B. Typically, the first fluid delivery arm 112 further includes a first delivery extension member 136 and a plurality of nozzles including a first delivery nozzle 134. The plurality of nozzles are used to deliver polishing slurry or a relatively high-pressure stream of cleaning fluid (e.g., deionized water) to one or more locations along the surface of the polishing pad 105.

[0028] like Figure 3A A close-up cross-sectional view of the substrate carrier assembly 104 and the second fluid delivery arm 138 is shown. The substrate carrier assembly 104 is characterized by a carrier head 146, a carrier ring assembly 149 coupled to the carrier head 146, and a flexible membrane 150 disposed radially inside the carrier ring assembly 149 to hold and push the substrate 148 against the polishing pad 105 during processing. The carrier ring assembly 149 includes a lower annular portion and an upper annular portion, such as a substrate retainer 330 and a pad ring 332, respectively. Figure 3A The substrate retainer 330 is typically formed of a polymer, which is bonded to the gasket 332 using an adhesive layer (not shown) disposed therein. The gasket 332 is formed of a rigid material such as metal or ceramic and is secured to the carrier head 146 using a plurality of fasteners (not shown). Examples of suitable materials for forming the substrate retainer 330 and the gasket 332 include any one or a combination of the polishing slurry-resistant polymer, metal, and / or ceramic described herein. The flexible membrane 150 is typically coupled to the carrier head 146 using one or more annular membrane clips 334 to define a volume 336 together with the carrier head 146.

[0029] During substrate processing, substrate retainer 330 surrounds substrate 148 to prevent substrate 148 from sliding out from under substrate carrier assembly 104. Typically, during polishing, volume 336 is pressurized so that flexible membrane 150 exerts a downward force on substrate 148 as substrate carrier assembly 104 rotates about carrier axis A, thereby pressing substrate 148 against polishing pad 105. Carrier axis A may also be referred to herein as rotation axis, about which substrate carrier assembly 104 rotates during processing. Before and after polishing, vacuum is applied to volume 336 so that flexible membrane 150 deflects upward to create a low-pressure pocket between flexible membrane 150 and substrate 148, thereby vacuum clamping substrate 148 to substrate carrier assembly 104.

[0030] Typically, the inner diameter of the substrate retainer 330 is larger than the diameter of the substrate 148 to allow some gap between the substrate retainer 330 and the substrate 148 during polishing processes and substrate loading and unloading operations, such as greater than about 2 mm or more, or greater than about 3 mm or more. Similarly, the outer diameter of the substrate mounting surface of the flexible film 150 is smaller than the inner diameter of the substrate retainer 330 to allow the flexible film 150 to move relative to the substrate retainer 330. The gaps between the substrate 148 and the substrate retainer 330, and between the flexible film 150 and the substrate retainer 330, create slots. Typically, polishing slurry will accumulate between the edge of the substrate 148 and the substrate retainer 330.

[0031] Return to reference Figure 1 The second fluid delivery arm 138 includes a second actuator 140, a base plate 114, a second delivery extension member 142, and a second delivery nozzle 144. The second actuator 140 is movable about a second delivery arm axis E, causing the second delivery extension member 142 to oscillate about the second delivery arm axis E. The second delivery extension member 142 is coupled to the second actuator 140 at a first distal end of the second delivery extension member 142. The second delivery nozzle 144 is disposed at the opposite end of the second delivery extension member 142, such that the second delivery nozzle 144 is disposed at a second distal end of the second delivery extension member 142. The second delivery nozzle 144 is directed downward toward a polishing pad 105. The second delivery nozzle 144 is configured to provide a fluid, such as polishing slurry or water, to the polishing pad 105 near the outer edge of the substrate support assembly 104.

[0032] The metering unit 165 includes a measuring unit 162, a first opening 164 formed through the stage 106, a second opening 166 formed through the polishing pad 105, and a window 168 disposed within the second opening 166 within the polishing pad 105. The measuring unit 162 may be attached to the bottom of the stage 106 or disposed within the first opening 164. The measuring unit 162 is configured to measure the thickness of the substrate, including the substrate edge, and to determine the removal rate of the entire substrate and the substrate edge during polishing. In some embodiments, a process of dispensing one or more liquids from a second fluid delivery arm is subsequently controllable based on the removal rate measured by the metering tool. As the substrate passes through the window 168, the measuring unit 162 can measure the thickness of the substrate edge by projecting a radiation beam through the window 168 onto the substrate 148. The radiation beam is then reflected back to the measuring unit 162, and the thickness and / or removal rate at the edge of the substrate 148 is determined. The window 168 is an optically transparent window, such as a transparent quartz window or a transparent polymer window.

[0033] Controller 160 is connected to each of the stage 106, pad adjuster assembly 110, metering unit 165, first fluid delivery arm 112, second fluid delivery arm 138, and substrate carrier assembly 104. In some aspects of the CMP polishing process, controller 160 coordinates the rotation of stage 106 and the distribution of polishing fluid or water onto polishing pad 105 via either the first fluid delivery arm 112 or the second fluid delivery arm 138. In some embodiments, controller 160 uses measurements from metering unit 165 to determine when fluid will be delivered to polishing pad 105. Controller 160 also controls the movement of substrate carrier assembly 104 and can increase or decrease the amount of pressure applied to substrate 148 via substrate carrier assembly 104.

[0034] Figure 2 According to one embodiment Figure 1 A schematic plan view of the polishing system 100. (See reference...) Figure 1 The pad adjuster assembly 110, the first fluid delivery arm 112, the second fluid delivery arm 138, and the substrate carrier assembly 104 discussed are each disposed above the polishing pad 105. In one example, the polishing pad 105 is positioned around the stage axis B by a rotary actuator (not shown) coupled to the stage 106. Figure 1 Rotating counterclockwise. When viewed from above, the adjuster mounting plate 130 and the base plate support assembly 104 also typically rotate counterclockwise. Figure 2In some embodiments, each of the polishing pad 105, the adjuster mounting plate 130, and the substrate carrier assembly 104 rotates in the same direction. In some embodiments, the polishing pad 105, the stage 106, the adjuster mounting plate 130, and the substrate carrier assembly 104 rotate clockwise. In some embodiments, one or more of the polishing pad 105, the stage 106, the adjuster mounting plate 130, and the substrate carrier assembly 104 rotate clockwise, while the other components rotate counterclockwise.

[0035] The polishing pad 105 has a pad radius 366 of approximately 10 inches (254 mm) to approximately 30 inches (762 mm), such as approximately 12 inches (305 mm) to approximately 20 inches (508 mm), such as approximately 14 inches (356 mm) to approximately 16 inches (406 mm). In some embodiments, at least a portion of the first fluid delivery arm 112 is configured to deliver fluid at a location at least 50% of the pad radius 366 of the polishing pad 105, such as exceeding at least 60% of the pad radius 366 of the polishing pad 105, such as exceeding at least 80% of the pad radius 366. In some embodiments, the first fluid delivery arm 112 is configured to deliver fluid at a location at approximately 50% to approximately 90% of the pad radius 366 of the polishing pad 105, such as approximately 60% to approximately 85%. The first fluid delivery arm 112 is configured to deliver fluid over the polishing pad 105 at a position approximately 200 mm to approximately 360 mm inward from the edge of the polishing pad 105, such as approximately 210 mm to approximately 360 mm inward, such as approximately 225 mm to approximately 360 mm inward.

[0036] The first delivery extension member 136 of the first fluid delivery arm 112 is configured to exceed at least 50% of the pad radius 366 of the polishing pad 105, such as exceeding at least 70% of the pad radius 366 of the polishing pad, such as exceeding at least 80% of the pad radius 366 of the polishing pad. In some embodiments, the first delivery extension member 136 extends beyond the polishing pad by a first extension distance 329, such as extending beyond the polishing pad 105 by more than about 200 mm, such as extending beyond the polishing pad 105 by more than about 250 mm, such as extending beyond the polishing pad 105 by more than about 300 mm, such as extending beyond the polishing pad 105 by more than about 380 mm.

[0037] A first fluid, such as a polishing slurry, is delivered from one or more nozzles (such as the first delivery nozzle 134 of the first fluid delivery arm 112), and the first fluid travels along a first fluid path 202. The first fluid path 202 is a path around the polishing pad 105, wherein the polishing slurry intersects the substrate carrier assembly 104 and the substrate 148 at their inner edges, such that the first fluid path 202 intersects the substrate carrier assembly 104 and the substrate 148 at their edges, this intersection being closer to the center of the polishing pad 105 and the stage axis B. In some embodiments, the first fluid delivered from the first delivery nozzle 134 intersects the substrate carrier assembly 104 at a distance less than about 230 mm from the stage axis B, such as less than about 200 mm, less than about 150 mm, less than about 100 mm, or less than about 50 mm. The first fluid delivered from the first delivery nozzle 134 intersects the substrate support assembly 104 at a distance of at least 20 mm from the stage axis B, such as at least 30 mm from the stage axis B. When the polishing slurry from the first delivery nozzle 134 is disposed between the polishing pad 105 and the substrate 148, the polishing slurry travels along the second fluid path 204, which further distributes the polishing slurry between the polishing pad 105 and the substrate 148.

[0038] The first fluid delivery arm 112 is configured to dispense a first fluid over a large portion of the polishing pad 105, such that the first fluid delivery arm 112 dispenses fluid to the radially inner side of the substrate carrier assembly 104, and the first fluid delivery arm 112 is configured to supply fluid to the polishing pad such that the dispensed fluid completely overlaps with the radial position occupied by the substrate carrier assembly 104 on the polishing pad 105. The first fluid delivery arm 112 dispenses a first fluid, such as polishing fluid and / or water, onto the polishing pad 105 at a first radial position. The first radial position is relative to the central axis B of the polishing pad 105 from the innermost edge 380 of the substrate carrier assembly 104 (see [link to relevant documentation]). Figure 3B The radially inward position.

[0039] A second fluid delivery arm 138 is also disposed on the polishing pad 105, and in some configurations, the second fluid delivery arm 138 is disposed on the opposite side of the worktable 106 to the first fluid delivery arm 112. In one embodiment, the second fluid delivery arm 138 and the first fluid delivery arm 112 are disposed on opposite sides or halves of the polishing pad 105 (e.g., ...). Figure 2(as shown). The second fluid delivery arm 138 includes a second delivery extension member 142. The second fluid delivery arm 138 dispenses a second fluid, such as polishing slurry and / or water, onto the polishing pad 105. The second fluid travels from the second delivery nozzle 144 along a third fluid path 206. The second fluid is dispensed onto the polishing pad 105 at a second radial position. The second radial position is relative to the central axis B of the polishing pad 105 from the innermost edge 380 of the substrate support assembly 104. Figure 3B Radially outward but relative to the central axis B of the polishing pad 105 from the outermost edge 382 of the substrate support assembly 104. Figure 3B The third fluid path 206 extends radially inward between the second delivery nozzle 144 and the edge of the substrate support assembly 104. In some embodiments, the third fluid path 206 is located at the outermost edge 382 of the substrate support assembly 104. Figure 3B The second fluid path 206 intersects with the edge of the substrate support assembly 104, which is farther from the center of the polishing pad 105 and closer to the edge of the polishing pad 105. Once the second fluid intersects with the edge of the substrate support assembly 104 and the substrate 148, the second fluid travels along the fourth fluid path 208. The fourth fluid path 208 is generally along the path of the outer edge of the substrate 148 and the substrate support assembly 104. The fourth fluid path 208 intersects with the second fluid path 204, causing the first and second fluids to mix. The second fluid is mixed with the first fluid to adjust the amount and composition of the polishing slurry near the edge of the substrate 148. In some embodiments, the mixture of the first and second fluids will increase or decrease the amount or concentration of one or more components of the first fluid on a portion of the substrate 148. In one example, one or more components of the first fluid, which can be adjusted by adding a second fluid, include the amount and / or concentration of abrasive particles (e.g., silica-based abrasives, cerium oxide-based abrasives, and alumina-based abrasives) on a portion of substrate 148 (such as the edge of substrate 148), water, or other chemicals (e.g., acids, alkalis, inhibitors, etc.).

[0040] The second fluid delivery arm 138 can surround the second delivery shaft E ( Figure 1 The second fluid delivery arm 138 rotates about the second delivery axis E to change the position of the second delivery nozzle 144 above the polishing pad 105. The second fluid delivery arm 138 can move into and out of the first and second positions. In one example, the second position 210 creates an alternative fluid path 212, which replaces the third fluid path 206 created by the position of the second delivery extension member 142. Figure 2As shown, fluid path 212 is positioned at a different radial location than the third fluid path 206. The second fluid delivery arm 138 is moved to the second position 210 to allow the third fluid path 206 to be adjusted to an alternative fluid path 212 or another fluid path 212. As the substrate carrier assembly 104 moves through the polishing pad (e.g., along the pad radius 366 of the polishing pad), the movement of the second fluid delivery arm 138 can be synchronized with the movement of the substrate carrier assembly 104 to maintain a similar radial entry point for the second fluid along the outer circumference of the substrate carrier assembly 104. Alternatively, the second fluid delivery arm 138 is movable to allow the radial entry point along the outer circumference of the substrate carrier assembly 104 to be adjustable throughout the process.

[0041] Apart from Figure 2 Beyond the second position 210 shown, it is contemplated that the second fluid delivery arm 138 can be moved to a range of positions above the polishing pad 105 using the second actuator 140 and controller 160. In some embodiments, it is contemplated that the second fluid delivery arm 138 may have the capability to rotate semi-circularly about the second delivery axis E, such that the second fluid delivery arm 138 can rotate approximately 180 degrees. In yet other embodiments, the second fluid delivery arm 138 may rotate less than 180 degrees, such as less than about 120 degrees, such as less than about 90 degrees. In some embodiments, the second fluid delivery arm 138 is configured to rotate to a position in which the second delivery nozzle 144 is always positioned above the polishing pad 105 during the polishing operation.

[0042] Figure 3A yes Figure 1 and Figure 2 A schematic side view of a portion of the polishing system 100. Figure 3A A close-up side view of the substrate carrier assembly 104 and the second fluid delivery arm 138 is shown in more detail. The carrier head 146, carrier ring assembly 149, flexible membrane 150, polishing pad 105, stage 106, and substrate 148 are as described above. The substrate 148 is shown pressed against the polishing pad 105 by the flexible membrane 150. The flexible membrane 150 typically applies an adjustable amount of pressure to the substrate 148 during polishing to improve the planarization of the substrate surface. The flexible membrane 150 is coupled to the substrate carrier assembly via a membrane clamp (not shown).

[0043] Temperature control unit 304 and fluid source 302 are fluidly connected to second fluid delivery arm 138. Temperature control unit 304 and fluid source 302 are connected to and controlled by controller 160. Fluid source 302 supplies one or more fluids to second fluid delivery arm 138 to distribute one or more fluids onto polishing pad 105. Fluid source 302 includes one or more fluid sources configured to provide polishing slurry and water. The fluid sources supplied from fluid source 302 are each configured to provide their respective fluids at desired flow rates and pressures. The polishing slurry source can provide one or more fluids, including chemical solutions (e.g., acids, alkalis, inhibitors, etc.) for substrate polishing and / or solutions containing slurries (e.g., solutions containing abrasive particles (e.g., silica, cerium dioxide, or alumina-based abrasives)). The water source is deionized water. Fluid source 302 may include one or more pumps (one pump for each fluid).

[0044] Fluid source 302 is fluidly connected to temperature control unit 304 via first conduit 306. In some embodiments, temperature control unit 304 may be integrated into fluid source 302 and first conduit 306 may be removed. Temperature control unit 304 controls the temperature of the fluid before it reaches second fluid delivery arm 138. Temperature control unit 304 may include a resistance heating element to heat the fluid disposed within temperature control unit 304. Temperature control unit 304 may also include cooling channels disposed therein for cooling the fluid or for cooling the heating element. Temperature control unit 304 may heat or cool the fluid to a temperature suitable for enhancing or inhibiting CMP polishing processes. It is believed that by controlling the temperature of the fluid supplied to a first region of the substrate during polishing, together with other CMP process control variables discussed herein (e.g., the amount of fluid, the concentration of fluid components, and the applied pressure, etc.), the chemical activity and / or interaction of abrasive particles with the substrate surface can be adjusted to regulate the removal rate in the first region of the substrate relative to other regions of the substrate. The temperature control unit 304 is located outside the second fluid delivery arm 138 to reduce the volume occupied by the second fluid delivery arm 138 and to reduce the impact of heating or cooling on the volume around the second fluid delivery arm 138.

[0045] Temperature control unit 304 is fluidly connected to second fluid delivery arm 138 via second conduit 308. The second conduit extends between temperature control unit 304 and second fluid delivery arm 138. Once fluid reaches second fluid delivery arm 138, it is transferred through second fluid delivery arm 138 via third conduit 312. The third conduit extends through second fluid delivery arm 138 and fluidly connects second fluid delivery arm 138 to second delivery nozzle 144. Both second conduit 308 and third conduit 312 are thermally insulated to reduce heat loss of fluid traveling from temperature control unit 304 to second delivery nozzle 144.

[0046] In some embodiments, each of the first conduit 306, the second conduit 308, and the third conduit 312 includes two or more conduits, such that a first fluid, such as a polishing fluid, is provided through one conduit in a set of conduits, and a second fluid, such as water, is provided through a second set of conduits. The first and second sets of conduits may be connected in parallel and, before being separately supplied to one or more of the second delivery nozzles 144, separately enter the temperature control unit 304 from the fluid source 302 and separately from the temperature control unit 304 into the second fluid delivery arm 138. Thus, in some embodiments involving the delivery of multiple fluids, each of the fluids may be delivered and travel along multiple conduits (one different conduit for each type of fluid), such that the temperature control unit 304 may individually adjust the temperature of each of the multiple conduits to the same or different temperatures.

[0047] As described above, the second delivery nozzle 144 may include multiple nozzles, such as a first nozzle 310a, a second nozzle 310b, and a third nozzle 310c. The first nozzle 310a, the second nozzle 310b, and the third nozzle 310c are disposed along the bottom surface 348 of the second delivery extension member 142 (such as the bottom surface of the second delivery extension member 142). The first nozzle 310a, the second nozzle 310b, and the third nozzle 310c may be angled to spray the fluid 105 delivered through the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c in a direction other than the vertical direction (Z direction) perpendicular to the top surface 350 of the polishing pad 105. Although in Figure 3AThe diagram shows multiple nozzles arranged at multiple radial positions, but the multiple nozzles may also be arranged at positions along the second conveying extension 142 having the same radial distance from the second conveying axis E, such that each of the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c sprays fluid onto a similar radial position on the polishing pad 105. Although three nozzles are depicted herein as the second conveying nozzle 144, it is conceivable that other numbers of nozzles, such as two, four, five, or six nozzles, may also be used, thereby providing one or more different fluids to the surface of the polishing pad 105.

[0048] The spacing 318 between the bottoms of the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c and the top surface 350 of the polishing pad 105 is approximately 5 mm to approximately 120 mm, such as approximately 10 mm to approximately 100 mm, or such as approximately 10 mm to approximately 50 mm. The separation distance 320 between the bottom surface 348 of the second delivery extension member 142 and the top surface 350 of the polishing pad 105 is approximately 10 mm to approximately 160 mm, such as approximately 10 mm to approximately 150 mm, such as approximately 10 mm to approximately 100 mm, or such as approximately 10 mm to approximately 50 mm. The separation distance 320 is greater than approximately 10 mm to prevent the meniscus of the fluid on the pad from contacting the second delivery extension member 142.

[0049] In one example, each of the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c is configured to deliver a different fluid. In another example, the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c are configured to simultaneously or sequentially dispense both a first fluid and a second fluid, such as polishing slurry and water. In some embodiments, the first nozzle 310a is configured to dispense polishing slurry, while the second nozzle 310b and the third nozzle 310c are configured to dispense water. In one example, the first nozzle 310a is configured to dispense polishing slurry, while the second nozzle 310b and the third nozzle 310c are configured to dispense water from each nozzle at different temperatures and / or flow rates. In some embodiments, the first nozzle 310a is configured to dispense water, while the second nozzle 310b and the third nozzle 310c are configured to dispense polishing slurry. In one example, the first nozzle 310a is configured to dispense water, while the second nozzle 310b and the third nozzle 310c are configured to dispense different polishing slurries from each nozzle at the same or different temperatures and / or flow rates. In some embodiments, there may be multiple types of polishing fluids, and each polishing fluid may be dispensed from different nozzles at the desired temperature and flow rate.

[0050] Water and polishing fluid can be dispensed simultaneously or separately. In some embodiments, when water is dispensed from the first nozzle 310a, the second nozzle 310b and the third nozzle 310c simultaneously dispense polishing fluid. In other embodiments, polishing fluid is dispensed from the first nozzle 310a and water is dispensed from the second nozzle 310b and the third nozzle 310c simultaneously. Alternatively, polishing fluid and water are dispensed at separate times. In yet another embodiment, water and polishing fluid are mixed before they reach the first nozzle 310a, the second nozzle 310b, and the third nozzle 310c to change the concentration of the polishing fluid before it is dispensed onto the polishing pad 105. In embodiments where water and polishing fluid are pre-mixed, the water and polishing fluid can be mixed in either the fluid source 302, the temperature control unit 304, or within the conduits 306, 308, and 312.

[0051] The carrier radius 326 of the substrate carrier assembly 104 is approximately 110 mm to approximately 260 mm, such as approximately 155 mm to approximately 175 mm. The outermost edge 382 of the substrate carrier assembly 104... Figure 3B The substrate carrier assembly 104 is positioned at a distance 344 from the edge of the worktable 106 relative to the edge of the carrier edge. The carrier edge distance 344 is approximately 1 mm to approximately 50 mm, such as approximately 2 mm to approximately 40 mm, such as approximately 3 mm to approximately 35 mm. The carrier edge distance 344 can vary during processing as the substrate carrier assembly 104 moves across the entire polishing pad 105 (e.g., along the pad radius 366 and over the worktable 106). In some embodiments, the polishing pad 105 is slightly larger than the worktable 106. If the polishing pad 105 and the worktable 106 are the same size, the carrier edge distance 344 can be measured from the outer edge of the polishing pad 105 or from the outer edge of the worktable 106. The substrate carrier assembly 104 typically oscillates within a range of approximately less than 26 mm along the pad radius 366.

[0052] The outer edge of substrate 148 and the outermost edge 382 of substrate support assembly 104 Figure 3B The distance 328 between the substrate 148 and the substrate carrier 104 is approximately 20 mm to approximately 35 mm, such as approximately 25 mm to approximately 30 mm. The outer edge of the substrate carrier 104 is the outer edge of the substrate retainer 330. The distance 328 may vary slightly during processing as the substrate 148 moves within the substrate carrier 104. At certain moments, the substrate 148 contacts the inner edge of the substrate retainer 330, such that the distance 328 between the outer edge of the substrate 148 and the outer edge of the substrate carrier 104 is approximately equal to the thickness of the substrate retainer 330.

[0053] When the polishing pad 105 rotates, the substrate carrier assembly 104 can be positioned at various radial locations on the polishing pad 105, such that the substrate carrier assembly 104 can be positioned on the annular portion or band of the polishing pad 105 and can travel within the annular portion or band of the polishing pad 105. The radial portion of the polishing pad 105 where the substrate carrier assembly 104 is located is at least 10% of the total radius of the polishing pad 105 and no more than 90% of the total radius of the polishing pad 105 from the center of the polishing pad 105, such as at least 15% of the total radius of the polishing pad 105 and no more than 85% of the total radius of the polishing pad 105 from the center of the polishing pad 105. In some alternative embodiments, the substrate carrier assembly 104 can travel on the central axis of the polishing pad and the worktable and travel outwards along the outer edge of the polishing pad 105, such that the substrate can be positioned on the center of the polishing pad or partially suspended above the edge of the polishing pad 105.

[0054] A second fluid delivery arm 138 extends over the polishing pad 105 and the stage 106. A second actuator 140 of the second fluid delivery arm is coupled to the base plate 114. A second delivery extension member 142 is coupled to the distal end of the second actuator 140 and is disposed horizontally over the polishing pad 105. The second delivery extension member 142 extends beyond the polishing pad 105 by an extension distance 322. The extension distance 322 may be less than 255 mm, such that when polishing a 300 mm substrate, the second delivery extension member 142 extends beyond the polishing pad 105 by less than 250 mm, such as less than 230 mm, such as less than 118 mm. In some embodiments, the second fluid delivery arm 138 is disposed over the outer portion of the polishing pad 105 and at least 170 mm outward from the stage axis B, such as at least 160 mm outward from the stage axis B, such as at least 155 mm outward from the stage axis B. Other substrate sizes, such as 200 mm or 450 mm substrates, may also be used. In embodiments with alternative substrate sizes, in addition to a 300mm substrate, the second delivery extension member 142 can also be measured to extend beyond the polishing pad 105 by less than 75% of the pad radius 366, such as less than 60% of the pad radius 366, such as less than 55% of the pad radius 366, such as less than 50% of the pad radius 366. The second delivery extension member 142 extends over the outer portion of the polishing pad 105 such that the second fluid delivery arm overlaps with a portion of the polishing pad radius.

[0055] Both the second transport extension member 142 and the substrate carrier assembly 104 are disposed along an overlapping radial distance along the radius of the polishing pad 105, the overlapping radial distance being referred herein as the overlap portion 346 of the polishing pad 105. In some embodiments, the overlap portion 346, as measured on the polishing pad 105, is smaller than the diameter of the substrate carrier assembly 104, such that the overlap portion 346 is less than 200% of the carrier radius 326, such as less than 190% of the carrier radius 326, such as less than 180% of the carrier radius 326, such as less than 150% of the carrier radius 326, such as less than 100% of the carrier radius 326. In some embodiments, the overlap radius 346 is less than 380 mm, such as less than 360 mm, such as less than 300 mm, such as less than 200 mm, such as less than 180 mm, such as less than 155 mm. In some embodiments, the overlap radius 346 is greater than half of the carrier radius 326. In other embodiments, the overlap radius 346 is less than half the carrier radius 326, such that the fluid delivered by the second fluid delivery arm is delivered to a position on the polishing pad 105 that coincides with the outer radius of the substrate support assembly 104, said position being located near the outer edge of the polishing pad 105. In the embodiments described herein, the first fluid delivery arm 112 and the first delivery extension member 142 ( Figure 2 The first fluid delivery arm 112 extends a longer length than the second delivery extension member 142 and the second fluid delivery arm 138 along the pad radius 366 of the polishing pad 105 and the worktable 106, such that the first fluid delivery arm 112 extends further toward the central axis B of the worktable 106 than the second fluid delivery arm 138.

[0056] The second delivery nozzle 144 delivers fluid to the top surface 350 of the polishing pad 105 at the spray region 316, which is positioned at a distance from the center of the polishing pad 105 and the carrier axis A. The spray region 316 is an annular region surrounding the carrier axis A. In some embodiments, the spray region 316 may be configured anywhere along the radius of the polishing pad 105, but in other embodiments, the spray region 316 is positioned between the carrier axis A and the outer edge of the substrate support assembly 104.

[0057] Figure 3B yes Figure 3A A simplified schematic plan view of a portion of the polishing system 100. A polishing pad 105 is shown, and a pad adjuster assembly 110 (not shown) is also shown. Figure 2 To simplify the polishing pad 105, a first fluid delivery arm 112 distributes fluid to a first point 354 on the polishing pad 105. The first point 354 is located on a first annular ring 368 centered on the central axis B. A second fluid delivery arm 138 distributes fluid to a second point 358. The second point 358 is located on a second annular ring 372 centered on the central axis B.

[0058] The carrier axis A of the substrate carrier assembly 104 is configured to be at a first radial distance 364 from the central axis B of the polishing pad 105. The first radial distance 364 is approximately 40% to approximately 60% of the pad radius 366, such as approximately 45% to approximately 55% of the pad radius 366. In embodiments configured to polish a 300mm substrate, the first radial distance 364 is approximately 175mm to approximately 250mm, such as approximately 190mm to approximately 240mm.

[0059] The first point 354 is positioned at a second radial distance 352 from the central axis B of the polishing pad 105. In some configurations, the second radial distance 352 is approximately 5% to approximately 20% of the polishing pad radius 366, such as approximately 10% to approximately 15% of the polishing pad radius 366. For a 300mm substrate polishing system, the second radial distance 352 is approximately 40mm to approximately 175mm, such as approximately 50mm to approximately 150mm. The second point 358 is positioned at a third radial distance 356 from the central axis B of the polishing pad 105. In some configurations, the third radial distance 356 is greater than approximately 30% of the polishing pad radius 366 from the central axis B, such as approximately 30% to approximately 90% of the polishing pad radius 366, such as approximately 40% to approximately 90% of the polishing pad radius 366, such as approximately 60% to approximately 80% of the polishing pad radius 366. For a 300mm substrate polishing system, the third radial distance 356 is approximately 125mm to approximately 375mm, such as approximately 150mm to approximately 350mm.

[0060] In some embodiments, a first point 354 is located radially inside the innermost edge 380 of the substrate carrier assembly 104. The outermost edge 382 of the substrate carrier assembly 104 is located at or radially inside the fourth radial distance 360 ​​from the central axis B of the polishing pad 105. The outermost edge 382 remains within a third annular ring 374. The third annular ring 374 is an annular portion centered around the central axis B of the polishing pad. The third annular ring 374 has a radius of a fourth distance such that the third annular ring 374 is located at a fourth radial distance 360 ​​from the central axis B. In some embodiments, the fourth radial distance 360 ​​is approximately 85% to approximately 99% of the polishing pad radius 366, such as approximately 90% to approximately 99% of the polishing pad radius 366. In embodiments where the polishing pad system is configured to polish a 300mm substrate, the fourth radial distance 360 ​​is approximately 325mm to approximately 450mm, such as approximately 350mm to approximately 425mm. However, in other embodiments, the fourth radial distance 360 ​​may be greater than the radius of the polishing pad 105, such that the substrate carrier assembly 104 may sometimes be configured to extend beyond the edge of the polishing pad 105.

[0061] The second annular ring 372 is disposed between the first annular ring 368 and the third annular ring 374, such that the second point 358, where fluid is distributed from the second fluid delivery arm 138, is between the innermost edge 380 and the outermost edge 382, ​​and that the second point 358 passes under the substrate support assembly 104 when the polishing pad 105 rotates. Therefore, the second point 358 is located between the second radial distance 352 and the fourth radial distance 360.

[0062] The second point 358 is additionally located between the second radial distance 352 and the fourth radial distance 360, even when the substrate carrier assembly 104 oscillates (as described below). The oscillation of the substrate carrier assembly 104 can alter the second point 358, such that the second point 358 still passes beneath a portion of the substrate carrier assembly 104. The second radial distance 352 and the fourth radial distance 360 ​​are... Figure 3B The distance shown is a fixed distance, but it is generally understood to vary as the substrate carrier component 104 oscillates.

[0063] As described above, the substrate carrier assembly 104 is composed of a first actuator (such as...) Figure 1 The first actuator 170 moves. The first actuator 170 is configured to move the substrate carrier assembly 104 in a radial direction, an arcuate direction, or both radial and arcuate directions. In embodiments where the radial position of the substrate carrier assembly 104 changes throughout the polishing process, the carrier axis A can oscillate between two radial distances from the central axis B of the polishing pad 105, such that a first radial distance 364 varies between the two radial distances. The first radial distance 364 oscillates between a first radial value 384 and a second radial value 386. The first radial value 384 is from about 175 mm to about 180 mm, such as from about 176 mm to about 178 mm. The second radial value 386 is from about 200 mm to about 205 mm, such as from about 202 mm to about 204 mm. The second radial value 386 is greater than the first radial value 384.

[0064] As described above, the second actuator 140 enables the second fluid delivery arm 138 to rotate about the second delivery shaft E. Rotation of the second delivery shaft E causes the innermost portion of the second fluid delivery arm 138 to oscillate between a third radial value 388 and a fourth radial value 390. In some embodiments, the second delivery nozzle 144 ( Figure 3A It oscillates between a third radial value 388 and a fourth radial value 390. The fourth radial value 390 is greater than the third radial value 388, the first radial value 384, and the second radial value 386. The third radial value 388 is approximately 145 mm to approximately 250 mm, such as approximately 150 mm to approximately 225 mm. The fourth radial value 390 is approximately 340 mm to approximately 380 mm, such as approximately 350 mm to approximately 370 mm.

[0065] Figure 4 This is to explain from Figure 1-3B A figure shows a method 400 for dispensing polishing slurry in a polishing system 100. Method 400 includes a first operation 402, a second operation 404, a third operation 406, and a fourth operation 408. Although described herein in a sequential order, the operations within method 400 may be modified to be performed in an alternative order, at the same time, and / or may include additional operations.

[0066] The first operation 402 includes initiating polishing of a substrate (such as substrate 148) and from a first fluid delivery arm (such as...) Figure 1 and Figure 2 The first fluid delivery arm 112 disclosed herein dispenses a first fluid. The first fluid is provided to the surface of the polishing pad at a first flow rate and a first temperature. The substrate is held and pressed into the polishing pad (such as polishing pad 105 disclosed herein) by a substrate support assembly 104. In this example, the polishing pad rotates counterclockwise. The substrate support assembly 104 may also rotate counterclockwise while oscillating along the radius of the polishing pad. The first fluid is dispensed from one or more nozzles along the first fluid delivery arm at the radius of the polishing pad, the first fluid typically being within 50% of the radius of the polishing pad.

[0067] The first fluid is a polishing slurry used for polishing the substrate. The polishing slurry comprises a mixture containing slurry and / or chemicals, which may include particles suspended therein to aid in polishing the substrate. The first fluid is delivered within the inner half of the radius of the polishing pad and flows along a first fluid path. In some embodiments, the first fluid is dispensed to a location on the polishing pad that is radially inward of the substrate carrier assembly relative to the central axis B of the polishing pad. In some embodiments, the first fluid is delivered to a location such that it interacts with the entire substrate surface as it moves outward along the rotating polishing pad. Due to the rotation of the polishing pad and the centrifugal force applied to the first fluid, the first fluid moves outward along the polishing pad. As the fluid moves outward along the polishing pad, it can be said that the first fluid travels downward, such that the first fluid is delivered at an upstream location and flows downstream and radially outward from the center of the polishing pad towards its edge.

[0068] A substrate carrier assembly holds a substrate beneath it and includes a substrate retainer below it. In some processes, the substrate retainer helps prevent the substrate from slipping out from under the substrate carrier assembly. Therefore, the substrate retainer may sometimes contact the edge of the substrate and may cause uneven removal rates during polishing along the substrate edge. Accumulation of a first fluid may occur at one or more areas of the substrate surface and the substrate retainer. Accumulation of the first fluid also affects the removal rate at one or more areas of the substrate surface, such as near the substrate edge. Accumulation of polishing fluid at different areas of the substrate surface may increase or decrease the removal rate near the substrate edge. In one exemplary embodiment, a decrease in the removal rate may be caused by a barrier layer formed between the affected substrate area (e.g., the substrate edge) and the polishing pad. In yet another exemplary embodiment, accumulation of polishing fluid may increase the removal rate by exposing the substrate to a larger amount of polishing chemicals. Conversely, depending on the application and the polishing fluid used, reducing the accumulation of polishing fluid near the substrate edge may increase or decrease the removal rate. Therefore, a second fluid, such as deionized water or additional polishing fluid, may be dispensed onto the polishing pad, and the second fluid is configured to interact with the first fluid near the substrate edge. The second fluid can dilute or thicken the polishing fluid that accumulates near the edge of the substrate.

[0069] During processing, the carrier assembly is translated across the surface of the pad while simultaneously rotating around the carrier axis. The translation of the carrier assembly across the entire surface of the pad causes a first radial distance, measured from the central axis to the axis of rotation, to vary between a first radial value and a second radial value as the carrier assembly is translated across the entire surface of the pad.

[0070] During the first operation 402, a pad adjuster assembly (such as pad adjuster assembly 110) can be used to clean or refresh the polishing pad. The pad adjuster assembly rotates counterclockwise together with the substrate carrier assembly and the polishing pad. The pad adjuster assembly is positioned on the polishing pad and comes into physical contact with the polishing pad as it moves through it.

[0071] The second operation 404 is typically performed after the first operation 402, but in some embodiments, the second operation 404 may be performed first or simultaneously. The second operation 404 includes dispensing one or more second fluids from a second fluid delivery arm (such as second fluid delivery arm 138). The one or more second fluids are provided to the surface of the polishing pad at a second flow rate and a second temperature. The second fluid may be a different fluid from the first fluid. The first and second flow rates, as well as the first and second temperatures, of the first and second fluids may be the same or different. The second fluid is dispensed to a location on the polishing pad that intersects with a desired portion of the substrate, such as approximately 140 mm outward from the central axis B of the polishing pad, for example, approximately 150 mm outward. In some embodiments, a second fluid is dispensed to an outer region of the polishing pad such that the second fluid is delivered via the polishing pad to a portion of the substrate, said portion being at least 35% greater than the radius of the polishing pad from its central axis B, such as being more than about 40% greater than the radius of the polishing pad from its central axis B, such as being between about 40% and about 95% of the radius of the polishing pad from its central axis B, such as being between about 40% and about 90% of the radius of the polishing pad from its central axis B. As described above, the second fluid is dispensed from one or more nozzles along a second fluid delivery arm, and the second fluid impacts the polishing pad along a spray region 316. The second fluid flows along a second fluid path. The starting point of the second fluid path extends outward from the starting point of the first fluid path, such that the second fluid path is distributed outward relative to the central axis B at the point where the first fluid is dispensed. The second fluid intersects with a carrier assembly, and the first and second fluids mix below the carrier assembly.

[0072] The mixture of the first fluid and the second fluid can alter the properties of the fluid near the substrate edge. The second fluid can be either a polishing slurry or water. As described above, the polishing slurry may include chemicals and / or slurries. In some embodiments, the polishing slurry is dispensed as the second fluid from the second fluid delivery arm to increase the amount of polishing slurry near the substrate edge. In some embodiments, water is dispensed as the second fluid from the second fluid delivery arm to adjust one or more properties of the first fluid supplied from the first delivery arm. In some cases, a second fluid including water is provided to reduce the amount of polishing slurry near the substrate edge, control the temperature and / or concentration of the combined first and second fluids, and / or dilute polishing slurry that may accumulate near the substrate edge.

[0073] In some embodiments, both the substrate carrier assembly and the second fluid delivery arm are movable and move during the second operation 404. The substrate carrier assembly moves along the top surface of the polishing pad and moves the substrate along the polishing pad to different positions. The second fluid delivery arm can be controlled to track the movement of the substrate carrier assembly as it moves. The second fluid delivery arm can track the substrate carrier assembly by moving together with it.

[0074] In some embodiments, the second fluid delivery arm is configured to move such that the radial position from which fluid is dispensed from the second fluid delivery arm intersects the substrate carrier assembly at the same location, such that as the substrate carrier assembly moves, the dispensed fluid intersects the substrate at the same radial position on the substrate. In this embodiment, the second fluid delivery arm always delivers the second fluid to a location with a similar radius to the center of the substrate carrier assembly. This tracking may include oscillating the second fluid delivery arm about axis E to further extend or reduce the amount of extension on the polishing pad.

[0075] In some embodiments, the second fluid delivery arm is configured to move such that the fluid path resulting from the delivery of fluid from the second fluid delivery arm always intersects the substrate carrier assembly at the same relative position on the substrate carrier assembly. In this embodiment, the rotation of the second fluid delivery arm about axis E is controlled such that the ends of the fluid path from the second fluid delivery arm consistently intersect the substrate carrier assembly at similar radial and angular positions relative to the carrier axis A.

[0076] The type of the second fluid dispensed by the first conveying arm and the second fluid conveying arm depends on the material being polished from the substrate. In embodiments where the oxide is polished by the polishing system, the temperature of the second fluid may be controlled by a temperature control unit (such as temperature control unit 304).

[0077] The second operation 404 may include simultaneous dispensing of the first fluid or the dispensing of the first fluid may be stopped during the second operation 404. Even if the dispensing of the first fluid is stopped, the rotation of the polishing pad and the substrate carrier assembly is maintained. In some embodiments, the rotational speed of the polishing pad and / or the substrate carrier assembly is reduced or increased during the second operation, but the rotation will continue without stopping the polishing pad or the substrate carrier assembly.

[0078] A metering unit (such as metering unit 165) measures the thickness of the substrate to estimate the removal rate caused by polishing. The metering unit is connected to a controller, and if any second fluid is used, the controller determines the appropriate amount of second fluid to be used and the temperature of the second fluid, such that the controller determines the dispensing rate from the second fluid delivery arm based on the measured thickness of the substrate. In some embodiments, the temperature of the second fluid is increased to increase the polishing rate at the substrate edges. In other embodiments, the temperature of the second fluid is decreased to decrease the polishing rate at the substrate edges. The metering unit may be an inductive metering unit (e.g., eddy current metering) or a spectral metering unit (e.g., optical metering).

[0079] In some operations, instead of using a metering unit, the second fluid is dispensed sequentially at timed intervals, such that the second fluid is dispensed at predetermined intervals during the polishing process. In some embodiments, the second fluid is dispensed continuously, but the flow rate and / or temperature of the second fluid are adjusted over time.

[0080] The third operation 406 includes stopping the dispensing of the second fluid. The dispensing of the second fluid by the second fluid delivery arm is permanently or periodically stopped. In some embodiments, the dispensing of the second fluid stops in the third operation 406, and the controller restarts the dispensing of the second fluid in the second operation 404. The second operation 404 and the third operation 406 may be repeated or cyclical. If the removal rate near the substrate edge begins to deviate from a preset range, the second operation 404 is repeated after the third operation 406. The removal rate can be measured using a metering unit. In some embodiments, the controller may determine the frequency and number of cycles of the second operation 404 and the third operation 406 to achieve the desired polishing result. The progress of polishing is determined using a metering unit. Alternatively, the frequency and processing parameters for repeating the second operation 404 and the third operation 406 are determined experimentally, such that the second operation 404 and the third operation 406 are repeated a preset number of times.

[0081] The fourth operation 408 includes stopping substrate polishing and dispensing the first fluid. The fourth operation 408 is performed after each of the first operation 402, the second operation 404, and the third operation 406 has been completed. Once the polishing operation performed on the substrate has been completed, substrate polishing and dispensing of the first fluid cease.

[0082] The embodiments disclosed herein relate to a second fluid delivery arm configured to deliver a second fluid to a polishing pad within a CMP system. The second fluid delivery arm differs from a first fluid delivery arm in that it is configured to distribute fluid to the edges of the substrate while significantly reducing its impact on the amount of polishing fluid near the center of the substrate. In some embodiments, the fluid delivered by the second fluid delivery arm will only significantly affect the polishing rate within the outer 10 mm of the substrate, such that for a 300 mm diameter substrate, the polishing rate at the outermost 10 mm will be affected, while the polishing rate within the inner 140 mm will remain substantially unchanged.

[0083] The processes used in this disclosure may vary depending on the type of polishing process. Some polishing processes may use temperature control units and metering units, while others may not. Similarly, some polishing processes use automated dispensing processes based on previous experimental results without metering units. If the polishing process described herein relates to oxide polishing, temperature control units and metering units may be utilized. If the polishing process described herein relates to metal polishing, the process may be automated, and the controller may dispense a second fluid at predetermined intervals without using a metering unit. While temperature control units and metering units are primarily used during oxide polishing as described above, it is contemplated that they may also be used for metal processes, such as tungsten polishing.

[0084] While the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is defined by the appended claims.

Claims

1. An apparatus for processing a substrate, comprising: A pad is disposed on a worktable, wherein the pad has a pad radius and a central axis, the pad radius extending from the central axis; A carrier assembly configured to be disposed on the surface of the pad and having a carrier radius extending from a rotation axis of the carrier assembly, wherein the rotation axis is disposed at a first radial distance from the central axis; A first fluid delivery arm having a first nozzle, the first fluid delivery arm being configured to deliver a first fluid to a first point on the pad at a second radial distance from the central axis; as well as A second fluid delivery arm having a second nozzle, the second fluid delivery arm being configured to provide a second fluid to a second point on the pad, the second point being located at a third radial distance from the central axis, wherein the second radial distance is less than the first radial distance, and the third radial distance is greater than or equal to the second radial distance; as well as A controller adapted to synchronize the movement of the second fluid delivery arm with the movement of the carrier assembly, so that the second fluid supplied to the second point on the pad has a consistent radial entry point below the carrier assembly.

2. The device of claim 1, wherein the first fluid delivery arm extends over a greater length than the second fluid delivery arm over the pad radius.

3. The device of claim 1, wherein the magnitude of the third radial distance is less than the fourth radial distance extending from the central axis to the outermost point on the support assembly.

4. The device of claim 1, wherein the first fluid delivery arm and the bearing assembly occupy a radial position on the pad that are completely overlapped.

5. The device of claim 1, wherein the second fluid delivery arm comprises: Fluid source; as well as A temperature control unit is fluidly coupled to the fluid source and the second fluid delivery arm.

6. An apparatus for processing a substrate, comprising: A pad is disposed on a worktable, wherein the pad has a pad radius and a central axis, the pad radius extending from the central axis; A carrier assembly configured to be disposed on the surface of the pad and having a carrier radius extending from a rotation axis of the carrier assembly, wherein the rotation axis is disposed at a first radial distance from the central axis; A first fluid delivery arm having a first nozzle, the first fluid delivery arm being configured to deliver a first fluid to a first point on the pad at a second radial distance from the central axis; A second fluid delivery arm having a second nozzle, the second fluid delivery arm being configured to provide a second fluid to a second point on the pad, the second point being located at a third radial distance from the central axis, wherein the second radial distance is less than the first radial distance, and the third radial distance is greater than or equal to the second radial distance; A first actuator is configured to translate the carrier assembly across the entire surface of the pad such that the first radial distance varies between a first radial value and a second radial value as the carrier assembly translates across the entire surface of the pad. as well as A second actuator, configured to translate the second fluid delivery arm above the surface of the pad, such that as the second fluid delivery arm translates above the surface of the pad, the third radial distance varies between a third radial value and a fourth radial value. The fourth radial value is greater than the first radial value or the second radial value.

7. The apparatus of claim 6, further comprising a metering unit disposed within the worktable, the metering unit including a window and a measuring unit disposed through the pad, wherein the measuring unit is connected to a controller and configured to measure the polishing rate near the edge of the substrate.

8. An apparatus for processing a substrate, comprising: Workbench; A pad, the pad being disposed on the worktable, the pad having a pad radius extending from the central axis of the pad; A support assembly disposed on the pad, the support assembly having a carrier radius extending from the rotation axis of the support assembly; A first fluid delivery arm extends beyond at least 50% of the radius of the pad and is configured to deliver a first fluid to a first point on the pad; as well as A second fluid delivery arm extends beyond the radius of the pad by less than 60%, and is configured to provide a second fluid to a second point on the pad, the second point being located at a radial distance from the central axis, the radial distance being greater than 40% of the radius of the pad. as well as A controller adapted to synchronize the movement of the second fluid delivery arm with the movement of the carrier assembly to maintain a consistent distance between the second point on the pad and the carrier assembly.

9. The apparatus of claim 8, further comprising a metering unit connected to a controller and configured to measure the polishing rate near the edge of a substrate.

10. The apparatus of claim 8, wherein the second fluid delivery arm comprises: Base plate; A rotary actuator coupled to the base plate; An extension member that extends over the pad; as well as A nozzle, which is coupled to the extension member and disposed on the pad.

11. The device of claim 10, wherein the first fluid delivery arm and the bearing assembly occupy a radial position on the pad that are completely overlapped.

12. The device of claim 8, wherein the bearing component is configured to be at least 10% of the total radius of the pad and no more than 90% of the total radius of the pad from the center of the pad.

13. A method for polishing a substrate, comprising: A substrate is pushed against the surface of a pad in a polishing system using a carrier assembly, wherein the pad has a pad radius and a central axis, the pad radius extending from the central axis; While rotating the bearing assembly around the rotation axis, the bearing assembly is translated across the entire surface of the pad; A first fluid is dispensed from a first fluid delivery arm onto the pad at a first temperature and a first flow rate, wherein the first fluid is delivered to the pad at a second radial distance measured from the central axis; A second fluid is dispensed from a second fluid delivery arm onto the pad at a second flow rate and a second temperature, wherein the second fluid is delivered to the pad at a third radial distance measured from the central axis, such that the third radial distance is greater than the second radial distance; Stop the distribution of the second fluid; as well as Stop the distribution of the first fluid; Both the carrier assembly and the second fluid delivery arm are movable and track each other, so that when the carrier assembly translates across the entire surface of the pad, the fluid dispensed from the second fluid delivery arm intersects with the same portion of the carrier assembly.

14. The method of claim 13, wherein the first fluid is different from the second fluid.

15. The method of claim 13, wherein the magnitude of the third radial distance is less than the fourth radial distance extending from the central axis to the outermost point on the bearing assembly.

16. The method of claim 13, wherein the second fluid is dispensed onto the pad at a radial position relative to the central axis of the pad, from the innermost edge of the support assembly outward but from the outermost edge of the support assembly inward relative to the central axis of the pad.

17. The method of claim 13, wherein the dispensing of the second fluid is synchronized with the movement of the carrier assembly, wherein... Synchronizing the movement of the carrier assembly with the delivery of the second fluid means synchronizing the movement of the second fluid delivery arm with the movement of the carrier assembly. The second fluid is delivered to the pad at a third radial distance measured from the central axis, such that the third radial distance is greater than the second radial distance, and The first fluid and the second fluid are simultaneously delivered to the pad.

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