Base ground detection apparatus and method

Abstract

The application relates to a base grounding detection device and method. A voltage signal of a base is collected by a voltage signal collection unit, and a first signal indicating base grounding is determined as an output signal by a voltage detection unit according to the voltage signal and a preset voltage signal. When a process is performed, a control unit immediately instructs a semiconductor device to stop performing the process and sends an alarm signal once the first signal is received, so that the grounding condition caused by the short connection of the base to the chamber wall or the inner liner can be found in time, and the accident of the wafer being broken by the current and the serious influence on the electrical performance of the wafer and the product quality can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a pedestal grounding detection apparatus and method. BACKGROUND

[0002] Magnetron sputtering process is a widely used technology in the field of semiconductor manufacturing. A typical magnetron sputtering process is completed in a high vacuum chamber as shown in FIG. 1. The main structure of the chamber includes: chamber wall 9, target material 1, inner liner 2, compression ring 3, pedestal 4. These structures mainly constitute the closed environment required for the magnetron sputtering process. Before the magnetron sputtering process is performed, the wafer 7 is first placed on the pedestal 4, and then the chamber is pumped to a vacuum state by the vacuum pump 5. When the chamber reaches the specified vacuum degree, the pedestal 4 will be raised and the compression ring 3 will be lifted, so that the compression ring 3 is separated from the inner liner 2, and the pedestal 4 and the compression ring 3 are suspended. Figure 1 When the pedestal 4 reaches the process position, the control system will introduce a specified amount of argon gas 10 into the chamber as a process gas, and the magnetron sputtering process can begin at this time. Referring to FIG. 2, the sputtering power supply 8 applies a specified voltage between the chamber wall 9 and the target material 1, ionizes the argon gas in the chamber, and under the binding action of the rotating magnetron 6 on the electrons, the ionized argon ions are subjected to the action of electric field force and move towards the target material 1 (cathode). The lower surface of the target material 1 will form a stable plasma. Under the action of electric field and magnetic field, the ionized argon ions continuously bombard the surface of the target material 1, causing the target atoms to be sputtered and fall on the surface of the wafer 7 placed on the pedestal 4, thereby realizing the film deposition process on the surface of the wafer 7.

[0003] Figure 2 At the same time, during the above-mentioned magnetron sputtering process, free electrons move towards the chamber inner liner 2 (anode), and some of the free electrons will also fall on the suspended pedestal 4. The suspended pedestal 4 will accumulate a certain amount of free electrons, causing a potential difference between the pedestal 4 and the ground. The greater the power during the process, the more free electrons will accumulate on the pedestal 4.

[0004]

[0005] ​​In the process of performing the process, if the susceptor 4 is short-circuited with the chamber wall 9 or the inner liner 2, for example, foreign matter appears in the chamber to short-circuit the susceptor 4 with the chamber wall 9 or the inner liner 2, or the susceptor 4 is wrongly judged to reach the process position while the susceptor 4 and the compression ring 3 are not completely separated from the inner liner 2, and the magnetron sputtering process is started, at this time, the susceptor 4 is short-circuited with the chamber wall 9 and the inner liner 2, the free electrons accumulated on the susceptor 4 are quickly absorbed by the ground, the susceptor 4 is at the same potential as the ground, and the chamber wall 9 is conductive to the ground, which is equivalent to that the susceptor 4 becomes an anode, resulting in that a current loop is formed between the susceptor 4 and the target material 1 (cathode), and the current flows through the wafer 7 placed on the susceptor 4, which will cause the components on the wafer 7 to be broken down by the current, seriously affecting the electrical performance of the wafer and the product quality. In the prior art, it is difficult to find that the susceptor 4 is short-circuited with the chamber wall 9 or the inner liner 2 in the process of performing the process, so that the process cannot be stopped in time to stop the process in time due to abnormal grounding of the susceptor, which affects the quality of the wafer. SUMMARY

[0006] The purpose of the present application is to provide a method and device capable of conveniently and accurately detecting the grounding of the susceptor.

[0007] In one aspect of the present application, a susceptor grounding detection device is provided, which is used in a semiconductor device, the susceptor is arranged in a process chamber in the semiconductor device for performing a semiconductor process, and the susceptor is used to carry a wafer to be processed, the device comprises a voltage signal acquisition unit, a voltage detection unit and a control unit; wherein:

[0008] The voltage signal acquisition unit is used to acquire the voltage signal of the susceptor;

[0009] The voltage detection unit is used to receive the voltage signal from the voltage signal acquisition unit, and determine whether to send a first signal as an output signal to the control unit according to the voltage signal and a preset voltage signal, the first signal indicating the grounding of the susceptor;

[0010] The control unit is used to instruct the semiconductor device to stop performing the process and send an alarm signal when the first signal is received during the process performed by the semiconductor device.

[0011] Optionally, the voltage detection unit is specifically used to:

[0012] receive the voltage signal, and compare the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is less than the preset voltage signal, the first signal is taken as the output signal.

[0013] Optionally, the voltage detection unit is further used to:

[0014] If the absolute value of the voltage signal is greater than the preset voltage signal, a second signal is taken as the output signal, the second signal indicating that the pedestal is not grounded.

[0015] Optionally, the device further comprises a pressurizing unit for providing a reference voltage signal to the voltage detecting unit in the case that the pedestal has no voltage signal, and the voltage detecting unit is configured to compare the reference voltage signal with the preset voltage signal, and take a second signal as the output signal when the absolute value of the reference voltage signal is greater than the preset voltage signal, the second signal indicating that the pedestal is not grounded.

[0016] Optionally, the control unit is further configured to record the position of the pedestal as a first position and a second position respectively when the output signal changes from the second signal to the first signal and then from the first signal to the second signal, and compare the first position with the second position, and determine that the second position is the lowest process position when the first position is lower than the second position.

[0017] Another aspect of the present application also provides a pedestal grounding detection method for use in a semiconductor device, the method comprising:

[0018] S1, collecting a voltage signal of a pedestal;

[0019] S2, determining whether to take a first signal as an output signal according to the voltage signal and a preset voltage signal, the first signal indicating that the pedestal is grounded;

[0020] S3, stopping the execution of a process and issuing an alarm signal if the output signal is the first signal during the execution of the process.

[0021] Optionally, step S2 specifically comprises:

[0022] comparing the voltage signal with the preset voltage signal, and taking the first signal as the output signal if the absolute value of the voltage signal is less than the preset voltage signal.

[0023] Optionally, step S2 further comprises:

[0024] If the absolute value of the voltage signal is greater than the preset voltage signal, a second signal is taken as the output signal, the second signal indicating that the pedestal is not grounded.

[0025] Optionally, the method further comprises:

[0026] In the case that the pedestal voltage signal is zero, a reference voltage signal is provided, and the reference voltage signal is compared with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, a second signal is taken as the output signal, and the second signal indicates that the pedestal is not grounded.

[0027] Optionally, the method further comprises:

[0028] When the output signal changes from the second signal to the first signal and then from the first signal to the second signal, the position of the pedestal is recorded as a first position and a second position respectively, and the first position and the second position are compared, and when the first position is lower than the second position, the second position is determined as the lowest process position.

[0029] The technical scheme of the present application, through the voltage signal acquisition unit acquires the voltage signal of the pedestal, and the voltage detection unit determines whether to take the first signal indicating that the pedestal is grounded as the output signal according to the voltage signal and the preset voltage signal. When the process is performed, the control unit immediately instructs the semiconductor equipment to stop performing the process and sends an alarm signal as soon as it receives the first signal, so that the grounding condition caused by the short circuit of the pedestal and the chamber wall or the inner liner can be found in time, and the accident that the wafer to be processed is broken by current and the electrical performance of the wafer is seriously affected, and the product quality is affected, can be avoided. BRIEF DESCRIPTION OF DRAWINGS

[0030] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description of exemplary embodiments of the present application taken in conjunction with the accompanying drawings, in which like reference characters designate the same parts throughout the drawings.

[0031] Figure 1 A schematic diagram of a typical high vacuum chamber for performing a magnetron sputtering process is shown.

[0032] Figure 2 A schematic diagram of a magnetron sputtering process performed in a chamber is shown.

[0033] Figure 3 A structural block diagram of a pedestal grounding detection device according to an embodiment of the present application is shown.

[0034] Figure 4 A structural block diagram of a pedestal grounding detection device according to an exemplary embodiment of the present application is shown.

[0035] Figures 5(a), (b) and (c) show output diagrams of a pedestal grounding detection device according to an exemplary embodiment of the present application corresponding to different states.

[0036] Fig. 6(a) and (b) show analysis diagrams for determining the lowest process position according to an exemplary embodiment of the present application.

[0037] Figure 7 Fig. 1 shows a flow chart of a base ground detection method according to an embodiment of the present application.

[0038] Legend of reference signs:

[0039] 1 target; 2 memory; 3 compression ring; 4 base; 5 vacuum system; 6 magnetron;

[0040] 7 wafer; 8 sputtering power source; 9 chamber wall; 10 argon;

[0041] 302 voltage signal acquisition unit; 304 voltage detection unit;

[0042] 306 control unit; 308 pressurizing unit. DETAILED DESCRIPTION

[0043] The present application will be described in more detail by referring to the attached drawings. Although the preferred embodiments of the present application are shown in the drawings, it is understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present application will be thorough and complete, and will fully convey the scope of the present application to those skilled in the art.

[0044] Reference will now be made to Figure 3 . Figure 3 Fig. 1 shows a structure block diagram of a base ground detection device according to an embodiment of the present application. The device is used in a semiconductor device, and the base is arranged in a process chamber in the semiconductor device for performing a semiconductor process, and is used for carrying a wafer to be processed. As shown in the figure, the base ground detection device includes a voltage signal acquisition unit 302, a voltage detection unit 304, and a control unit 306.

[0045] The voltage signal acquisition unit 302 is used for acquiring the voltage signal of the base. Optionally, the voltage signal acquisition unit 302 can acquire the voltage signal of the base by being electrically connected to the part of the base 9 exposed to the outside of the chamber. Before formally starting to perform the magnetron sputtering process, the base 9 will gradually rise from the initial position until reaching the process position. The above-mentioned part of the base "exposed to the outside of the chamber" refers to the part of the base 9 that is always exposed to the outside of the chamber during operation and will not rise into the chamber. The voltage signal acquisition unit 302 can be a voltage signal acquisition wire, which can be connected to the base by screws or the like.

[0046] The voltage detection unit 304 is configured to receive the voltage signal from the voltage signal acquisition unit, and determine whether to send a first signal as an output signal to the control unit according to the voltage signal and a preset voltage signal, the first signal indicating that the pedestal is grounded. In some examples, the voltage signal can be further processed, for example, the voltage signal can be divided by a voltage dividing circuit to meet the range requirement of the control system for the electrical signal, and / or the amplitude thereof can be scaled as required, and / or the voltage signal can be inverted, and the like, and then whether to send the first signal as the output signal to the control unit is determined according to the processing result and the preset voltage signal, which is not limited herein.

[0047] In some possible embodiments, the voltage detection unit 306 is specifically configured to receive the voltage signal, and compare the voltage signal with the preset voltage signal, and if the absolute value of the voltage signal is less than the preset voltage signal, the first signal is sent as the output signal.

[0048] In some possible embodiments, the voltage detection unit 306 is further configured to send a second signal as the output signal if the absolute value of the voltage signal is greater than the preset voltage signal, the second signal indicating that the pedestal is not grounded.

[0049] The control unit 306 is configured to instruct the semiconductor device to stop performing the process and send an alarm signal when the first signal is received during the process performed by the semiconductor device.

[0050] The skilled person in the art can select a suitable preset voltage signal according to actual needs, simulation experiments, and the like.

[0051] In the above examples, the voltage signal of the pedestal is acquired by the voltage signal acquisition unit, and the voltage detection unit determines whether to send a first signal indicating that the pedestal is grounded as an output signal according to the voltage signal and a preset voltage signal. When the process is performed, the control unit instructs the semiconductor device to stop performing the process and sends an alarm signal as soon as the first signal is received, so that the grounding condition caused by the short connection of the pedestal to the chamber wall or the inner liner can be found in time, and the accident of the wafer being broken by the current and thus the electrical performance of the wafer being seriously affected and the product quality being affected can be avoided.

[0052] The above terms "first signal" and "second signal" are used to distinguish signals representing different information. In one example, the first signal refers to an electrical signal with a first level, and the second signal refers to an electrical signal with a second level, for example, the first level can be a high level and the second level can be a low level, or vice versa, the first level can be a low level and the second level can be a high level, which can conveniently and concisely indicate whether the pedestal is grounded and is convenient for subsequent use.

[0053] Figure 4 A structure block diagram of a susceptor ground detection device according to an exemplary embodiment of the present application is shown. As shown, the device further comprises a voltage application unit 308 for providing a reference voltage signal to the voltage detection unit 304 in the case that the susceptor is without voltage signal, and the voltage detection unit 304 is further configured to compare the reference voltage signal with the preset voltage signal, and determine that the absolute value of the reference voltage signal is greater than the preset voltage signal, and output a second signal as the output signal, which indicates that the susceptor is not grounded. Figure 4

[0054] In the case that the susceptor is without voltage signal, the reference voltage signal will be compared as a substitute voltage signal in the subsequent step, so that in the case that the susceptor is suspended and without accumulated electric charge, the voltage detection unit 304 can also output the second signal, which is clearly distinguished from the first signal indicating that the susceptor is grounded, and ensures that the subsequent control unit 306 can output a correct alarm signal.

[0055] The voltage detection unit 304 and the voltage application unit 308 can be realized by a circuit, which can be integrated on the same circuit board, and those skilled in the art can also realize the above-mentioned units by other applicable hardware and / or software, which is not limited in the present application.

[0056] When a process is performed in a process chamber of a semiconductor device, the susceptor needs to be lifted to a suitable process position, which must be the position where the susceptor lifts the compression ring to separate the compression ring from the inner liner. Therefore, it is necessary to determine the lowest position of the susceptor during the process, i.e. the lowest process position of the susceptor. How to determine the appropriate lowest process position is also a technical problem in the art. The lowest process position refers to the lowest position of the susceptor allowed by the process conditions. We usually take the position of the susceptor 4 when the compression ring 3 is just separated from the inner liner 2 and the susceptor 4 is just in a suspended state as the lowest process position of the chamber for performing the magnetron sputtering process. If the lowest process position is too low, the process cannot be normally performed. If the lowest process position is too high, the adjustable space of the susceptor 4 during the performance of different processes will be significantly reduced. The greater the adjustable space, the more processes can be performed subsequently. Correspondingly, the smaller the adjustable space, the more the subsequent processes will be significantly limited. In the prior art, the chamber needs to be opened, one end of the probe of the multimeter is connected to the susceptor 4, the other end is connected to the chamber wall 9, and the susceptor 4 is manually lifted to determine the lowest process position by manually monitoring the conduction between the susceptor and the chamber wall. This method is relatively cumbersome to implement and will disturb the chamber to a certain extent.

[0057] ​According to some embodiments of the present application, the control unit is further configured to record the position of the susceptor as a first position and a second position respectively when the output signal changes from the second signal to the first signal and then from the first signal to the second signal, compare the first position and the second position, and determine the second position as the lowest process position when the first position is lower than the second position.

[0058] In one example, the position of the susceptor can be represented by the distance between the susceptor and the initial position.

[0059] In one example, the position of the susceptor can be obtained from the operation information of the driving motor of the susceptor, for example, the lifting distance of the susceptor can be obtained from the operation information of the driving motor.

[0060] According to the above exemplary embodiments of the present application, the lowest process position can be determined quickly and accurately without interfering with the chamber.

[0061] The output of the susceptor grounding detection device in different states according to the exemplary embodiments of the present application is analyzed below in connection with FIGS. 5(a), (b) and (c).

[0062] The inventors have conducted in-depth and detailed analysis on the entire process of the susceptor being lifted from the initial position to the process position before the process is performed, the process being performed, and the susceptor being lowered from the process position to the initial position after the process is completed, and have considered abnormal situations in which the susceptor is shorted to the chamber wall or the inner liner during the process, and have classified these situations according to the voltage state of the susceptor:

[0063] (1) the susceptor is in a floating state, and there is no accumulated charge on the susceptor;

[0064] (2) the susceptor is in a floating state, and there is accumulated negative charge on the susceptor;

[0065] (3) the susceptor is in a grounded state.

[0066] Before the susceptor is in contact with the compression ring and after the compression ring is lifted and the compression ring is separated from the inner liner during the lifting stage of the susceptor, both belong to the above case (1); during the lowering stage of the susceptor, after the compression ring is placed on the inner liner and separated from the compression ring, it also belongs to the above case (1).

[0067] During the process, it belongs to the above case (2); during the lowering stage of the susceptor, before the compression ring is in contact with the inner liner, it also belongs to the above case (2).

[0068] The base is in the rising stage and contacts the compression ring until the compression ring is separated from the inner liner, which belongs to case (3); the base is in the falling stage and contacts the inner liner until the base is separated from the compression ring, which belongs to case (3); foreign matter appears during the process execution, which causes the base to be short-circuited with the chamber wall or the inner liner, which also belongs to case (3).

[0069] Here, case (1) is analyzed first. FIG. 5(a) analyzes case (1) by taking the state diagram before the base contacts the compression ring in the rising stage as an example, and other states conforming to case (1) are similar to it. When no magnetron sputtering process is performed in the magnetron sputtering chamber, the base is in a suspended state except for the moment when the base lifts the compression ring in the rising process, and there is no accumulated negative charge on the base. In this state, since there is no voltage signal at the voltage signal acquisition unit, and the voltage detection unit judges whether the base is grounded by the voltage signal acquired by the voltage signal acquisition unit, the voltage signal of the base cannot be acquired, and the voltage detection unit cannot be compared with the preset voltage signal, so the voltage signal provided by the voltage signal acquisition unit 308 is a reference voltage signal. The voltage detection unit 304 detects the reference voltage signal provided by the voltage signal acquisition unit 308 and compares it with the preset voltage signal. The setting principle of the reference voltage signal is that its absolute value is greater than the preset voltage signal. Therefore, the voltage detection unit 304 sends the second signal as the output signal to the control unit 306, and the second signal indicates that the base is not grounded. In this way, the base without voltage signal can be normally compared and judged with the set comparison voltage. In an example, the preset voltage signal can be set to 0.5V (volt), and the reference voltage signal can be set to 15V.

[0070] Case (2) is analyzed. FIG. 5(b) analyzes case (2) by taking the magnetron sputtering process as an example, and other states conforming to case (2) are similar to it. At this time, the magnetron sputtering process is performed in the chamber, as described above, the negative charge is accumulated on the suspended base, the suspended base is in a negative voltage state, and the voltage signal acquisition unit 302 acquires the negative voltage signal. In the actual magnetron sputtering process, it is a negative voltage with a large amplitude, and the voltage detection unit 304 compares the voltage signal with the preset voltage signal, and the absolute value of the voltage signal is greater than the preset voltage signal. At this time, the voltage detection unit 304 sends the second signal to the control unit 306 to indicate that the base is not grounded.

[0071] The case (3) is analyzed. Fig. 5(c) analyzes the case (3) with the example of the state that the base is in the stage of rising, the base contacts the compression ring and the compression ring is not separated from the inner liner, and other states meeting the case (3) are similar to it. When there is no magnetron sputtering process in the magnetron sputtering chamber, and the base is in the rising process, the base rises to contact the compression ring and lifts the compression ring from the inner liner at the moment, at this moment, the base is grounded through the contact between the compression ring and the inner liner; similarly, when the process is completed, the base is lowered from the process position, and the compression ring is restored to the original position, at this moment, when the base is separated from the compression ring and the compression ring is placed on the inner liner, the base is grounded through the contact between the compression ring and the inner liner; or when the base should be in the suspended state, but is grounded due to other abnormal conditions, for example, the magnetron sputtering process has an abnormal condition (for example: when there is a foreign matter between the base and the chamber wall, the foreign matter short-circuits the base and the chamber wall; or when the base is at a relatively low process position, the distance between the base and the inner liner is relatively close, if a foreign matter falls between the inner liner and the base, the base and the inner liner are short-circuited), the accumulated negative charge on the base is discharged, the potential of the base is equal to the ground, the voltage signal acquisition unit 302 collects the voltage signal of the base as 0, the voltage detection unit 304 compares the voltage signal with the preset voltage signal (0.5V), the absolute value is less than the preset voltage signal, and therefore the first signal is output as the output signal to the control unit 306, and the first signal indicates that the base is grounded.

[0072] Figs. 6(a) and 6(b) show schematic diagrams for determining the lowest process position according to the exemplary embodiments of the present application, for the convenience of description, the first signal is a low-level signal, and the second signal is a high-level signal. If there is no abnormal condition causing the base to be grounded, the base is only in the state of being grounded as shown in Fig. 5(c). Because the compression ring contacts the inner liner, the inner liner is connected to the ground, and the base is grounded when contacting the compression ring. When determining the lowest process position, it is necessary to ensure that the base moves from bottom to top, because we need the position that the base is separated from the inner liner.

[0073] Figure 6(a) shows a schematic diagram of a pre-process pedestal lifting process. As shown in Figure 6(a), the pedestal starts from an initial position and moves when the pedestal contacts the compression ring at t1 seconds. According to the above analysis, at this time, the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level) because the pedestal is grounded. At this time, the position of the pedestal is the first position (the position where the pedestal contacts the compression ring). As the pedestal lifts the compression ring and continues to move upward, when the pedestal moves to t2 seconds, the pedestal lifts the compression ring to completely separate it from the liner, and the connection point of the compression ring and the liner is disconnected. At this time, the pedestal is not grounded, and the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). At this time, the position of the pedestal is the second position (the position where the pedestal separates from the liner). The inventors have conducted in-depth research on this process. In the above process, at t2, when the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level), the pedestal and the compression ring have completely separated from the liner, and the pedestal and the compression ring have just separated from the liner. Therefore, the above-mentioned second position can be determined as the lowest process position.

[0074] Figure 6(b) shows a schematic diagram of a post-process pedestal lowering process. The pedestal moves from the process position to the initial position, i.e. the pedestal moves from top to bottom, which is the process of the pedestal returning the lifted compression ring to the liner and then returning to the initial position. When the pedestal moves to t3 seconds, the pedestal contacts the compression ring to the liner, and the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level). When the pedestal moves to t4 seconds, the compression ring completely falls onto the liner, and the pedestal separates from the compression ring, and the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). The output signal of the voltage detection unit 304 in Figure 6(b) appears similar to that in Figure 6(a), but after careful analysis, it can be found that at t3, when the above-mentioned output signal changes, the pedestal and the compression ring have already contacted the liner, i.e. the pedestal has just passed the theoretically lowest process position downward. Therefore, the position of the pedestal at t3 is not suitable as the lowest process position.

[0075] Figure 7 A flowchart of a pedestal grounding detection method according to an embodiment of the present application is shown. As shown in Figure 6(a), the method comprises steps S1-S3. Figure 7

[0076] S1, acquiring a voltage signal of the pedestal;

[0077] S2, determining whether to take the first signal as an output signal according to the voltage signal and a preset voltage signal, the first signal indicating that the pedestal is grounded;

[0078] S3, during the process, if the output signal is the first signal, stopping the process and issuing an alarm signal.​

[0079] In some possible implementation manners, the step S2 specifically comprises:

[0080] comparing the voltage signal with the preset voltage signal, and if the absolute value of the voltage signal is less than the preset voltage signal, taking the first signal as the output signal.

[0081] In some possible implementation manners, the step S2 further comprises:

[0082] if the absolute value of the voltage signal is greater than the preset voltage signal, taking a second signal as the output signal, the second signal indicating that the pedestal is not grounded.

[0083] In some possible implementation manners, the method further comprises:

[0084] providing a reference voltage signal in the case that the pedestal voltage signal is absent, comparing the reference voltage signal with the preset voltage signal, and taking a second signal as the output signal when the absolute value of the reference voltage signal is greater than the preset voltage signal, the second signal indicating that the pedestal is not grounded.

[0085] In some possible implementation manners, the method further comprises:

[0086] when the output signal changes from the second signal to the first signal and then from the first signal to the second signal, recording the positions of the pedestal as a first position and a second position respectively, comparing the first position with the second position, and determining that the second position is the lowest process position when the first position is lower than the second position.

[0087] For other details and aspects of the present embodiment, please refer to the above description, which will not be repeated here.

[0088] The embodiments of the present application have been described above, the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A base grounding detection device for use in a semiconductor device, wherein the base is disposed in a process chamber of the semiconductor device for performing semiconductor processes, and the base is used to support a wafer to be processed, characterized in that, The device includes a voltage signal acquisition unit, a voltage detection unit, and a control unit; wherein: The voltage signal acquisition unit is used to acquire the voltage signal of the base; The voltage detection unit is used to receive the voltage signal from the voltage signal acquisition unit, and determine whether to send a first signal as an output signal to the control unit based on the voltage signal and a preset voltage signal, wherein the first signal indicates that the base is grounded; The control unit is configured to, upon receiving the first signal during the semiconductor device's process execution, instruct the semiconductor device to stop executing the process and issue an alarm signal; The device further includes a pressurizing unit, which provides a reference voltage signal to the voltage detection unit when there is no voltage signal on the base. The voltage detection unit compares the reference voltage signal with the preset voltage signal and determines that when the absolute value of the reference voltage signal is greater than the preset voltage signal, it uses a second signal as the output signal. The second signal indicates that the base is not grounded.

2. The apparatus according to claim 1, characterized in that, The voltage detection unit is specifically used for: The voltage signal is received and compared with the preset voltage signal. If the absolute value of the voltage signal is less than the preset voltage signal, the first signal is used as the output signal.

3. The apparatus according to claim 2, characterized in that, The voltage detection unit is also used for: If the absolute value of the voltage signal is greater than the preset voltage signal, then the second signal is used as the output signal, and the second signal indicates that the base is not grounded.

4. The apparatus according to claim 1 or 3, characterized in that, The control unit is further configured to, when receiving the output signal changing from the second signal to the first signal and then from the first signal to the second signal, record the position of the base as a first position and a second position respectively, compare the first position and the second position, and determine the second position as the lowest process position when the first position is lower than the second position.

5. A base grounding detection method for use in semiconductor equipment, characterized in that, The method includes: S1. Acquire the voltage signal of the base; S2. Determine whether to use the first signal as the output signal based on the voltage signal and the preset voltage signal, wherein the first signal indicates that the base is grounded; S3. If the output signal is the first signal during the execution of the process, stop the execution of the process and issue an alarm signal; The method further includes: When there is no voltage signal at the base, a reference voltage signal is provided, and the reference voltage signal is compared with the preset voltage signal. When the absolute value of the reference voltage signal is greater than the preset voltage signal, the second signal is used as the output signal, and the second signal indicates that the base is not grounded.

6. The method according to claim 5, characterized in that, Step S2 specifically includes: The voltage signal is compared with the preset voltage signal. If the absolute value of the voltage signal is less than the preset voltage signal, then the first signal is used as the output signal.

7. The method according to claim 6, characterized in that, Step S2 also includes: If the absolute value of the voltage signal is greater than the preset voltage signal, the second signal is used as the output signal, and the second signal indicates that the base is not grounded.

8. The method according to claim 5 or 7, characterized in that, The method further includes: When the output signal changes from the second signal to the first signal and then from the first signal to the second signal, the position of the base is recorded as a first position and a second position, respectively. The first position and the second position are compared, and when the first position is lower than the second position, the second position is determined to be the lowest process position.

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