Display device

Abstract

A display device includes a first conductive layer, a first insulating layer, a plurality of semiconductor channels, a second conductive layer, a second insulating layer and a light shielding layer. The first conductive layer includes a plurality of scan lines and a plurality of gates connected to the scan lines. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a plurality of data lines, a plurality of touch signal lines, a plurality of gate signal lines, a plurality of source electrodes and a plurality of drain electrodes. The second insulating layer is located on the second conductive layer. The light shielding layer is located on the second insulating layer and includes a plurality of touch electrodes and a plurality of pixel electrodes separated from the touch electrodes. Each touch electrode overlaps with a corresponding plurality of semiconductor channels, and each touch electrode is electrically connected to a corresponding at least one touch signal line. The pixel electrodes are electrically connected to the drain electrodes, respectively.

Description

Technical Field

[0001] The invention relates to a display device. Background Art

[0002] In order to meet the modern people's desire to grasp information at any time, new electronic display devices have been proposed one after another through the ever-changing electronic technology. Electronic paper (electronic paper) using electrophoretic display (EPD) is easier for users to watch for a long time because the image display effect is similar to the appearance of ink on paper. It is often used in devices for reading e-books. In addition, electrophoretic display panels (EPD) also have the advantage of low power consumption, which is more suitable for use in many portable electronic devices. Summary of the invention

[0003] An object of the present invention is to provide a display device having the advantage of low cost.

[0004] A display device of the present invention comprises a first substrate, a first conductive layer, a first insulating layer, a plurality of semiconductor channels, a second conductive layer, a second insulating layer and a light shielding layer. The first conductive layer is located on the first substrate and comprises a plurality of scan lines extending along a first direction and a plurality of gates connected to the scan lines. The first insulating layer is located on the first conductive layer. The semiconductor channels are located on the first insulating layer and overlap the gates respectively. The second conductive layer is located on the first insulating layer and comprises a plurality of data lines, a plurality of touch signal lines, a plurality of gate signal lines, a plurality of source electrodes and a plurality of drain electrodes. The data lines, the touch signal lines and the gate signal lines extend along a second direction. The gate signal lines are electrically connected to the scan lines. The source electrodes are connected to the data lines. The second insulating layer is located on the second conductive layer. The light shielding layer is located on the second insulating layer and comprises a plurality of touch electrodes and a plurality of pixel electrodes separated from the touch electrodes. Each touch electrode overlaps the corresponding plurality of semiconductor channels, and each touch electrode is electrically connected to the corresponding at least one touch signal line. The pixel electrodes are electrically connected to the drain electrodes respectively.

[0005] Based on the above, the touch electrode and the pixel electrode both belong to the light shielding layer and can be formed together, thus saving the manufacturing cost of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1A is a schematic top view of a display device according to an embodiment of the present invention.

[0007] Figure 1B is a partial circuit diagram according to an embodiment of the present invention.

[0008] Figure 2Ais a schematic top view of a display device according to an embodiment of the present invention.

[0009] Figure 2B It is along Figure 2A Schematic cross-sectional view of lines a-a', bb' and c-c'.

[0010] Figure 3 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0011] Figure 4 is a schematic top view of a display device according to an embodiment of the present invention.

[0012] The reference numerals are as follows:

[0013] 10,20,30: Display device

[0014] 12: Display area

[0015] 14: Surrounding area

[0016] 100: first substrate

[0017] 110: first insulating layer

[0018] 120: Second insulation layer

[0019] 122:Through hole

[0020] 130: Flat layer

[0021] 200: driving circuit

[0022] 300: Second substrate

[0023] 300': Covering layer

[0024] 310: Common electrode

[0025] CH: Semiconductor Channel

[0026] CS: Connection Structure

[0027] D: Drain

[0028] DL: Data line

[0029] E1: First Direction

[0030] E2: Second Direction

[0031] EP: Electrophoretic display medium layer

[0032] G: Gate

[0033] GL: Gate signal line

[0034] H: Hole

[0035] M1: first conductive layer

[0036] M2: Second conductive layer

[0037] M3: Light-shielding layer

[0038] MS: mesh structure

[0039] O1, O2: Open

[0040] OL: Oxide Conductive Layer

[0041] PE: Pixel electrode

[0042] RE: Reflective Electrode

[0043] S: Source

[0044] SL: Scan Line

[0045] SS: Sheltering Structure

[0046] T: Active components

[0047] TE: Touch electrode

[0048] TL: Touch signal line DETAILED DESCRIPTION

[0049] Figure 1A is a schematic top view of a display device according to an embodiment of the present invention, wherein Figure 1A The first substrate 100 , the driving circuit 200 , the touch electrodes TE and the touch signal lines TL are shown, and other components are omitted.

[0050] Please refer to Figure 1A The display device 10 includes a first substrate 100 , a driving circuit 200 , touch electrodes TE, and touch signal lines TL. The driving circuit 200 , the touch electrodes TE, and the touch signal lines TL are located on the first substrate 100 .

[0051] The touch control electrodes TE are located in the display area 12 of the display device 10. The touch control electrodes TE are separated from each other. Each touch control electrode TE corresponds to a plurality of pixel electrodes ( Figure 1A Omitted) settings. Figure 1A In the figure, the touch electrodes TE are shown as rectangles, but the present invention is not limited thereto. In fact, each touch electrode TE includes a mesh structure with holes, and each pixel electrode is disposed in a corresponding hole of the corresponding touch electrode TE.

[0052] Each touch electrode TE is electrically connected to at least one corresponding touch signal line TL. In this embodiment, each touch electrode TE is electrically connected to two touch signal lines TL, and the two touch signal lines TL are electrically connected to each other in the peripheral area 14 of the display device 10 and to the driving circuit 200 in the peripheral area 14.

[0053] In the present embodiment, each touch electrode TE is electrically connected to at least one corresponding touch signal line TL through a plurality of connection structures CS.

[0054] Figure 1B is a partial circuit diagram according to an embodiment of the present invention. Figure 1B For example, corresponding to Figure 1A A portion of one of the touch electrodes TE of the display device 10.

[0055] Please refer to Figure 1B In this embodiment, the display device 10 includes a plurality of scan lines SL, a plurality of data lines DL, a plurality of touch signal lines TL, and a plurality of gate signal lines GL.

[0056] The scan lines SL extend along the first direction E1. The data lines DL, the touch signal lines TL and the gate signal lines GL extend along the second direction E2. The data lines DL, the touch signal lines TL and the gate signal lines GL are parallel to each other. The first direction E1 intersects with the second direction E2. In this embodiment, the first direction E1 is perpendicular to the second direction E2.

[0057] The gate signal line GL is electrically connected to the scan line SL. A plurality of active devices T are electrically connected to the corresponding scan line SL, the corresponding data line DL and the corresponding pixel electrode PE.

[0058] In some embodiments, the width of the display area of ​​the display device 10 in the first direction E1 is greater than the width in the second direction E2. Therefore, in the display area of ​​the display device 10, more wires can be arranged in the first direction E1. Therefore, even if the data lines DL, the touch signal lines TL, and the gate signal lines GL are all arranged in the first direction E1, the pixel can still have a sufficient opening area. In some embodiments, the number of scan lines SL is less than the number of data lines DL, that is, the number of sub-pixels arranged in the second direction E2 is less than the number of sub-pixels arranged in the first direction E1.

[0059] Figure 2A is a schematic top view of a display device according to an embodiment of the present invention. Figure 2B It is along Figure 2A Schematic cross-sectional view of lines a-a', bb' and c-c'. Figure 2A For example, corresponding to Figure 1AA portion of one of the touch electrodes TE of the display device 10.

[0060] Please refer to Figure 2A and Figure 2B The display device 10 includes a first substrate 100, a first conductive layer M1, and a first insulating layer 110 ( Figure 2A Omitted from illustration), a plurality of semiconductor channels CH, a second conductive layer M2, a second insulating layer 120 ( Figure 2A In this embodiment, the display device 10 further includes a planar layer 130 ( Figure 2A Omitted from illustration), the second substrate 300 ( Figure 2A Omitted from illustration), common electrode 310 ( Figure 2A Omitted from illustration), electrophoretic display medium layer EP ( Figure 2A Omitted from illustration) and the oxide conductive layer OL ( Figure 2A Omitted for illustration).

[0061] The first substrate 100 may be a hard substrate or a flexible substrate, and the material may be glass, quartz, plastic or other suitable materials.

[0062] The first conductive layer M1 is located on the first substrate 100 and includes a plurality of scan lines SL extending along the first direction E1 and a plurality of gates G connected to the scan lines SL. In this embodiment, the first conductive layer M1 further includes a plurality of reflective electrodes RE. In this embodiment, the reflective electrodes RE are separated from the scan lines SL and the gates G.

[0063] The scan line SL, the gate G, and the reflective electrode RE include the same material, such as metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys thereof, metal oxides thereof, metal nitrides thereof, or combinations thereof or other conductive materials. In some embodiments, the method of forming the scan line SL, the gate G, and the reflective electrode RE includes: depositing a conductive material on the first substrate 100, and then patterning the conductive material to form the scan line SL, the gate G, and the reflective electrode RE.

[0064] The first insulating layer 110 is located on the first conductive layer M1 and covers the scan line SL, the gate G and the reflective electrode RE.

[0065] The semiconductor channels CH are located on the first insulating layer 110 and overlap the gates G respectively. In the present embodiment, each semiconductor channel CH overlaps a corresponding gate G. The semiconductor channel CH is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor material, oxide semiconductor material (for example: indium zinc oxide, indium gallium zinc oxide or other suitable materials, or a combination of the above materials) or other suitable materials or a combination of the above materials.

[0066] The second conductive layer M2 is located on the first insulating layer 110, and includes a plurality of data lines DL, a plurality of touch signal lines TL, a plurality of gate signal lines GL, a plurality of source electrodes S, and a plurality of drain electrodes D. The data lines DL, the touch signal lines TL, and the gate signal lines GL extend along the second direction E2. The source electrode S is connected to the data lines DL, and the drain electrode D is separated from the source electrode S. In this embodiment, the second conductive layer M2 further includes a plurality of capacitor electrodes CE. The capacitor electrodes CE arranged in the second direction E2 are connected to each other.

[0067] The data lines DL, the touch signal lines TL, the gate signal lines GL, the source electrode S, the drain electrode D and the capacitor electrode CE include the same material, such as metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys thereof, metal oxides thereof, metal nitrides thereof or combinations thereof or other conductive materials. In some embodiments, the method of forming the data lines DL, the touch signal lines TL, the gate signal lines GL, the source electrode S, the drain electrode D and the capacitor electrode CE includes: depositing a conductive material on the first insulating layer 110, and then patterning the conductive material to form the data lines DL, the touch signal lines TL, the gate signal lines GL, the source electrode S, the drain electrode D and the capacitor electrode CE.

[0068] In this embodiment, the active element T includes a gate G, a semiconductor channel CH, a source S, and a drain D. One active element T is disposed in each sub-pixel.

[0069] The second insulating layer 120 is located on the second conductive layer M2 and covers the data line DL, the touch signal line TL, the gate signal line GL, the source electrode S, the drain electrode D and the capacitor electrode CE.

[0070] The planar layer 130 is located on the second insulating layer 120. In this embodiment, the planar layer 130 has an opening O1 ( Figure 2A The opening O1 overlaps the touch signal line TL, and the opening O2 overlaps the capacitor electrode CE.

[0071] The light shielding layer M3 is located on the second insulating layer 120 and includes a plurality of touch electrodes TE and a plurality of pixel electrodes PE separated from the touch electrodes TE. Each pixel electrode PE is respectively filled in the through hole 122 of the second insulating layer 120 and is electrically connected to the drain electrode D. The touch electrode TE surrounds the corresponding plurality of pixel electrodes PE.

[0072] The capacitor electrode CE and the reflective electrode RE overlap the pixel electrode PE. In the present embodiment, the pixel electrode PE is at least partially disposed in the opening O2 of the planar layer 130, thereby increasing the capacitance between the pixel electrode PE and the capacitor electrode CE. In the present embodiment, two opposite surfaces of the second insulating layer 120 contact the pixel electrode PE and the capacitor electrode CE, respectively.

[0073] In this embodiment, the touch electrodes TE are located on the planar layer 130. The touch electrodes TE overlap the corresponding plurality of semiconductor channels CH. The touch electrodes TE can be used to shield light to prevent the light from irradiating the semiconductor channels CH and causing leakage of the active elements T.

[0074] Each touch electrode TE is electrically connected to at least one corresponding touch signal line TL. In the present embodiment, the touch electrode TE is electrically connected to the corresponding touch signal line TL through the connection structure CS located in the opening O1 of the planar layer 130 .

[0075] In this embodiment, each touch electrode TE includes a mesh structure MS and a plurality of shielding structures SS. The mesh structure MS has a plurality of holes H. The shielding structures SS connect the mesh structure MS. Each shielding structure SS overlaps a corresponding semiconductor channel CH, and each shielding structure SS and each pixel electrode PE are located in a corresponding hole H of the mesh structure MS.

[0076] The touch electrode TE and the pixel electrode PE include the same material. For example, the touch electrode TE and the pixel electrode PE include metals, such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, or the like, or alloys thereof or combinations thereof. In some embodiments, the method of forming the touch electrode TE and the pixel electrode PE includes: depositing a conductive material on the second insulating layer 120 and the planar layer 130, and then patterning the conductive material to form the touch electrode TE and the pixel electrode PE.

[0077] Oxide conductive layer OL ( Figure 2AThe oxide conductive layer OL covers the light shielding layer M3. In some embodiments, the area of ​​the oxide conductive layer OL is greater than or equal to the area of ​​the light shielding layer M3. In the present embodiment, the material of the light shielding layer M3 includes metal, and the oxide conductive layer OL is suitable for protecting the light shielding layer M3 to prevent the light shielding layer M3 from being oxidized. In some embodiments, the material of the oxide conductive layer OL includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above.

[0078] The second substrate 300 overlaps the first substrate 100. The second substrate 300 may be a hard substrate or a flexible substrate, and the material may be glass, quartz, plastic or other suitable materials.

[0079] The common electrode 310 is located on the second substrate 300 and overlaps the plurality of pixel electrodes PE. The common electrode 310 is a transparent conductive electrode, and its material includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above.

[0080] The electrophoretic display medium layer EP is located between the first substrate 100 and the second substrate 300. In this embodiment, the electrophoretic display medium layer EP is located between the common electrode 310 and the pixel electrode PE. In some embodiments, the display device 10 is, for example, an electronic paper with a touch function, but the present invention is not limited thereto.

[0081] Based on the above, in the present embodiment, the touch electrode TE and the pixel electrode PE both belong to the light shielding layer M3 and can be formed together, thus saving the manufacturing cost of the display device 10 .

[0082] Figure 3 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention. It must be noted here that Figure 3 The implementation examples are used Figure 2A and Figure 2B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0083] Figure 3 The display device 20 and Figure 2B The difference between the display device 10 and the display device 20 is that the display device 20 includes a cover layer 300 ′.

[0084] Please refer to Figure 3 The cover layer 300' is formed on the electrophoretic display medium layer EP, and the common electrode 310 is formed on the cover layer 300'. In this embodiment, the material of the cover layer 300' includes an insulating material.

[0085] Figure 4 is a schematic top view of a display device according to an embodiment of the present invention. It must be noted here that Figure 4 The implementation examples are used Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0086] Figure 4 The display device 30 and Figure 1A The difference between the display device 10 and the display device 30 is that the display device 30 is a bilaterally driven touch device.

[0087] Please refer to Figure 4 In the present embodiment, both ends of each touch signal line TL are electrically connected to the driving circuit 200 , thereby improving the influence of the resistance and capacitance load on the touch quality.

Claims

1. A display device, comprising: a first substrate; A first conductive layer is located on the first substrate and includes: A plurality of scan lines extending along a first direction; and A plurality of gates connected to a plurality of the scanning lines; a first insulating layer, located on the first conductive layer; A plurality of semiconductor channels are located on the first insulating layer and overlap the plurality of gates respectively; a second conductive layer, located on the first insulating layer, and comprising: A plurality of data lines, a plurality of touch signal lines, and a plurality of gate signal lines extending along a second direction, wherein a plurality of the gate signal lines are electrically connected to a plurality of the scan lines; and A plurality of source electrodes and a plurality of drain electrodes, wherein the plurality of source electrodes are connected to the plurality of data lines; and a second insulating layer, located on the second conductive layer; and A light shielding layer is located on the second insulating layer and comprises: A plurality of touch electrodes, wherein each of the touch electrodes overlaps with a corresponding plurality of semiconductor channels, and each of the touch electrodes is electrically connected to at least one corresponding touch signal line; and A plurality of pixel electrodes, separated from the plurality of touch electrodes and electrically connected to the plurality of drain electrodes respectively; Each of the touch electrodes includes a mesh structure with a plurality of holes, and each of the pixel electrodes is located in a corresponding hole of the plurality of mesh structures.

2. The display device as claimed in claim 1, wherein the first conductive layer further comprises: A plurality of reflective electrodes overlap the plurality of pixel electrodes.

3. The display device as claimed in claim 1, wherein the second conductive layer further comprises: A plurality of capacitor electrodes overlap the plurality of pixel electrodes.

4. The display device according to claim 3, further comprising: A planar layer is located on the second insulating layer, wherein two opposite surfaces of the second insulating layer are in contact with the plurality of pixel electrodes and the plurality of capacitor electrodes respectively, and the plurality of touch electrodes are located on the planar layer.

5. The display device according to claim 1, further comprising: a common electrode, overlapping the plurality of pixel electrodes; as well as An electrophoretic display medium layer is located between the common electrode and the plurality of pixel electrodes.

6. The display device as claimed in claim 1, wherein each of the touch electrodes further comprises: A plurality of shielding structures are connected to the mesh structure, wherein each of the shielding structures overlaps a corresponding semiconductor channel, and each of the shielding structures is located in a corresponding hole of the mesh structure. 7 . The display device as claimed in claim 1 , wherein the plurality of touch electrodes are separated from each other, and each of the touch electrodes surrounds a corresponding plurality of pixel electrodes.

8. The display device according to claim 1, further comprising: An oxide conductive layer is formed on the light shielding layer, wherein the material of the light shielding layer includes metal. 9 . The display device as claimed in claim 1 , wherein the number of the plurality of scan lines is smaller than the number of the plurality of data lines.

Images