A wiring structure and a display panel

Abstract

The embodiment of the present application relates to the field of electronic equipment, and discloses a wiring structure and a display panel.In the present application, the wiring structure comprises: a metal wiring layer; and a metal repair layer arranged on one side of the metal wiring layer and in contact with the metal wiring layer; wherein when the metal wiring layer is broken, the metal repair layer melts at a first temperature state and fills the crack of the metal wiring layer.The wiring structure and the display panel provided by the present application can realize the function of broken line repair, thereby improving the service life of the electronic equipment.

Description

Technical Field

[0001] This invention relates to the field of electronic devices, and in particular to a wiring structure and a display panel. Background Technology

[0002] As electronic devices become smaller, the metal traces within them are also becoming thinner, leading to a widespread problem of trace breakage. This is especially true in flexible display devices, where the display panel may be frequently stretched or bent for extended periods, significantly increasing the risk of internal metal trace breakage. Once a trace breaks, the display panel becomes unusable, thus affecting its lifespan.

[0003] Therefore, it is necessary to provide a new wiring structure to solve the above-mentioned technical problems. Summary of the Invention

[0004] The purpose of this invention is to provide a wiring structure and display panel that can achieve the function of repairing broken wires, thereby improving the service life of electronic devices.

[0005] To address the aforementioned technical problems, embodiments of the present invention provide a trace structure, comprising: a metal trace layer; and a metal repair layer disposed on one side of the metal trace layer and in contact with the metal trace layer; wherein, when the metal trace layer breaks, the metal repair layer melts at a first temperature and fills the crack in the metal trace layer.

[0006] Embodiments of the present invention also provide a display panel, including: a wiring structure as described above, and light-emitting pixels connected to the wiring structure.

[0007] Compared with the prior art, the embodiments of the present invention, when neither the metal trace layer nor the metal repair layer is broken, have an upper and lower stacked structure, and both the metal repair layer and the metal trace layer are conductive. When either the metal trace layer or the metal repair layer, or both of the stacked structures, is broken, the trace structure only needs to be heated to a first temperature, causing the metal repair layer to melt into a molten state. The molten metal repair layer not only repairs its own breakage, but also penetrates into the cracks in the broken metal trace layer to repair it, thereby achieving the function of broken wire repair and improving the service life of electronic devices.

[0008] Furthermore, the first temperature is greater than or equal to 60 degrees Celsius and less than or equal to 90 degrees Celsius; the melting point temperature of the metal trace layer is greater than or equal to 200 degrees Celsius. With this configuration, neither the metal repair layer nor the metal trace layer will melt during the use of the trace structure, ensuring the stability of the trace structure's performance. Simultaneously, if cracks appear in the trace structure, heating the trace structure to the first temperature will melt the metal repair layer while preventing the metal trace layer from melting. This allows the molten metal repair layer to fill and repair cracks in the metal trace layer and / or the metal repair layer, while also preventing the metal trace layer from melting and affecting other areas.

[0009] Furthermore, the metal repair layer is made of a gallium alloy. Because gallium has a very low melting point (29.76 degrees Celsius), the melting point of the metal repair layer can be adjusted to be between 60 and 90 degrees Celsius by adjusting the ratio of gallium to other metals.

[0010] In addition, the mass percentage of gallium in the gallium alloy is greater than or equal to 75% and less than or equal to 90%. This setting ensures that the melting point of the metal repair layer is between 60 and 90 degrees Celsius.

[0011] Furthermore, the pattern of the metal repair layer is identical to that of the metal trace layer. This configuration ensures that each segment of the trace in the metal trace layer can be repaired through the metal repair layer.

[0012] In addition, the metal repair layer includes an overlapping region that intersects with the metal trace layer, and the linewidth of the metal repair layer located in the overlapping region is greater than or equal to 0.8 times the linewidth of the metal trace layer. This configuration ensures that cracks on the metal trace layer are repaired more completely, avoiding the problem of large resistance changes in the metal trace layer caused by cracks, which could affect the display consistency of the display panel.

[0013] Furthermore, the linewidth of the metal repair layer is greater than or equal to the linewidth of the metal trace layer, and the metal repair layer completely covers the metal trace layer. This configuration avoids the problem of resistance changes in the metal trace layer caused by only partially repairing cracks on the metal trace layer, thus improving the display consistency of the repaired display panel.

[0014] Additionally, it includes an insulating layer located on the side of the metal repair layer away from the metal trace layer and having a groove; the metal repair layer is located within the groove. This configuration allows for the restriction of the molten metal repair layer when repairing cracks in the metal trace layer, thus preventing it from affecting other areas.

[0015] Additionally, it includes: an insulating layer located on the side of the metal trace layer away from the metal repair layer and having a groove; the metal trace layer is located within the groove. Attached Figure Description

[0016] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0017] Figure 1 This is a schematic diagram of the wiring structure provided in the first embodiment of the present invention when neither the metal wiring layer nor the metal repair layer is broken;

[0018] Figure 2 This is a schematic diagram of the wiring structure provided in the first embodiment of the present invention when both the metal wiring layer and the metal repair layer are broken;

[0019] Figure 3 This is a schematic diagram of the wiring structure when the molten metal repair layer in the first embodiment of the present invention achieves self-repair and penetrates into the cracks of the metal wiring layer;

[0020] Figure 4 This is a cross-sectional view of a wiring structure provided in the first embodiment of the present invention;

[0021] Figure 5 yes Figure 4 Top view of the cabling structure;

[0022] Figure 6 This is a cross-sectional view of another wiring structure provided in the first embodiment of the present invention;

[0023] Figure 7 This is a schematic diagram of a display panel provided in the first embodiment of the present invention when no groove is provided on the insulating layer;

[0024] Figure 8 This is a schematic diagram of a display panel provided in the first embodiment of the present invention, where the depth of the groove is greater than the thickness of the metal repair layer and the width of the groove is equal to the line width of the metal repair layer.

[0025] Figure 9 This is a schematic diagram of the wiring structure provided in the first embodiment of the present invention when the depth of the groove is less than the thickness of the metal repair layer and the width of the groove is greater than the line width of the metal repair layer;

[0026] Figure 10 This is a schematic diagram of the wiring structure provided in the first embodiment of the present invention when the depth of the groove is greater than the thickness of the metal repair layer and the width of the groove is greater than the line width of the metal repair layer. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been presented in the various embodiments of the present invention to enable the reader to better understand this application. However, the technical solutions claimed in this application can be implemented even without these technical details and various changes and modifications based on the following embodiments.

[0028] The first embodiment of the present invention relates to a wiring structure, such as Figures 1 to 10 As shown, it includes: a metal trace layer 11 and a metal repair layer 12. The metal repair layer 12 is disposed on one side of the metal trace layer 11 and is in contact with the metal trace layer 11. When the metal trace layer 11 is broken, the metal repair layer 12 melts at a first temperature and fills the crack in the metal trace layer 11.

[0029] like Figure 1 As shown, Figure 1 This is a schematic diagram of the wiring structure when neither the metal trace layer 11 nor the metal repair layer 12 is broken. In this case, the metal repair layer 12 and the metal trace layer 11 are stacked on top of each other, and both the metal repair layer 12 and the metal trace layer 11 are conductive.

[0030] like Figure 2 As shown, Figure 2 This is a schematic diagram of the wiring structure when both the metal trace layer 11 and the metal repair layer 12 are broken. Specifically, when either the metal trace layer 11, the metal repair layer 12, or both are broken, the display panel can be heated to between 60 and 90 degrees Celsius, causing the metal repair layer 12 to melt. The molten metal repair layer 12 can repair its own breakage and also penetrate into the cracks 20 of the broken metal trace layer 11 to repair the metal trace layer 11, thereby achieving the function of repairing broken wires and improving the service life of the display panel.

[0031] like Figure 3 , Figure 3 This is a schematic diagram of the wiring structure when the molten metal repair layer 12 repairs itself and penetrates the crack 20 in the metal wiring layer 11.

[0032] In one embodiment, the first temperature is greater than or equal to 60 degrees Celsius and less than or equal to 90 degrees Celsius, that is, the melting point of the material of the metal repair layer 12 is greater than or equal to 60 degrees Celsius and less than or equal to 90 degrees Celsius, and the melting point of the metal trace layer 11 is greater than or equal to 200 degrees Celsius. During the use of the trace structure, neither the metal repair layer 12 nor the metal trace layer 11 will melt, ensuring the stability of the trace structure's performance during use. At the same time, when cracks appear in the trace structure, it can be heated to the first temperature, at which point the metal repair layer 12 will melt, but the metal trace layer 11 will not melt. Thus, the molten metal repair layer 12 can be used to fill and repair the cracks in the metal trace layer 11 and / or the metal repair layer 12, while also preventing the metal trace layer 11 from melting and affecting other areas.

[0033] In practical applications, the material of the metal trace layer can be copper, molybdenum, etc., and the material of the metal repair layer 12 can be a gallium alloy. Because gallium has a very low melting point (29.76 degrees Celsius), the melting point of the metal repair layer 12 can be adjusted to be between 60 and 90 degrees Celsius by adjusting the ratio of gallium to other metals. For example, the material of the metal repair layer 12 can include gallium, and any one or any combination of low-melting-point metals such as indium, tin, and bismuth (e.g., gallium-indium alloy, gallium-tin alloy, gallium-bismuth alloy, etc.). Because gallium has a very low melting point, and indium, tin, and bismuth also have relatively low melting points, it is easier to achieve a melting point of 60 to 90 degrees Celsius for the metal repair layer 12.

[0034] Specifically, the mass percentage of gallium in the gallium alloy can be greater than or equal to 75% and less than or equal to 90%. That is, in the gallium alloy, the mass ratio of gallium to other metals (such as indium, tin, bismuth, etc.) can be greater than or equal to 3 / 1 and less than or equal to 9 / 1, thereby ensuring that the melting point of the metal repair layer 12 is between 60 and 90 degrees Celsius.

[0035] In this embodiment, the pattern of the metal repair layer 12 can be the same as that of the metal trace layer 11. That is, the metal repair layer 12 and the metal trace layer 11 are stacked in a superimposed structure everywhere, so as to ensure that each trace of the metal trace layer 11 can be repaired through the metal repair layer 12.

[0036] Optional, such as Figure 4 , Figure 5 , Figure 6As shown, the metal repair layer 12 may include an overlapping area that overlaps with the metal trace layer 11. In the first direction X, the linewidth of the metal repair layer in the overlapping area is greater than or equal to 0.8 times the linewidth of the metal trace layer 11. Combined with the fluidity of the molten metal repair layer 12, more than 80% of the area of ​​the cracks 20 on the metal trace layer 11 will be filled and repaired, thereby ensuring that the cracks 20 on the metal trace layer 11 are repaired relatively completely, avoiding the problem of large resistance changes in the metal trace layer 11 due to cracks 20, which would affect the display consistency of the display panel.

[0037] Furthermore, the line width of the metal repair layer 12 can be greater than or equal to the line width of the metal trace layer 11, and the metal repair layer 12 can completely cover the metal trace layer 11. In this case, the line width of the metal repair layer in the overlapping area is equal to the line width of the metal trace layer 11, thereby avoiding the problem of resistance change in the metal trace layer 11 caused by only partially repairing the crack 20 on the metal trace layer 11, and improving the display consistency of the repaired display panel.

[0038] In this embodiment, as Figure 4 , Figure 5 As shown, Figure 4 This is a cross-sectional view of a trace structure where the linewidth of the metal repair layer 12 is greater than the linewidth of the metal trace layer 11. Figure 5 for Figure 4 A top view of the intermediate trace structure. At this point, the requirements for the process are relatively low. Even if the position of the metal trace layer 11 is slightly offset due to process errors, the metal repair layer 12 can still completely cover the metal trace layer 11 to avoid the problem of resistance changes in the metal trace layer 11 caused by only partially repairing the cracks 20 on the metal trace layer 11.

[0039] In another feasible embodiment, such as Figure 6 As shown, Figure 6 This is a cross-sectional view of a trace structure where the linewidth of the metal repair layer 12 is equal to the linewidth of the metal trace layer 11. Of course, the linewidth of the metal repair layer 12 can also be smaller than the linewidth of the metal trace layer 11. As long as the linewidth of the overlapping area between the metal repair layer 12 and the metal trace layer 11 is greater than or equal to 0.8 times the linewidth of the metal trace layer 11, it can be ensured that the crack 20 on the metal trace layer 11 is repaired relatively completely.

[0040] In this embodiment, the wiring structure may further include: an insulating layer 13 located on the side of the metal repair layer 12 away from the metal wiring layer 11 and having a groove 30, wherein the metal repair layer 12 is located in the groove 30. The material of the insulating layer 13 may be a photosensitive adhesive, a non-photosensitive adhesive, or other insulating materials. By providing the groove 30, the flow of the molten metal repair layer 12 can be restricted when repairing the crack 20 of the metal wiring layer 11, so as to avoid affecting other areas.

[0041] Optionally, in the stacking direction along the metal trace layer 11 and the metal repair layer 12, the depth of the groove 30 may be greater than the thickness of the metal repair layer 12, and / or, in the stacking direction perpendicular to the metal trace layer 11 and the metal repair layer 12, the width of the groove 30 may be greater than the line width of the metal repair layer 12, thereby better restricting the flow of the molten metal repair layer 12 to avoid affecting other areas.

[0042] Furthermore, in the stacking direction perpendicular to the metal trace layer 11 and the metal repair layer 12, the width of the groove 30 can be more than 1.5 times the line width of the metal repair layer 12, thereby better restricting the molten metal repair layer 12 to avoid affecting other areas.

[0043] In practical applications, the trace structure may also include: a planarization layer 14 covering the metal trace layer 11, the metal repair layer 12, and the insulating layer 13 (if the pattern of the metal repair layer 12 can be the same as the pattern of the metal trace layer 11, and the line width of the metal repair layer 12 is equal to the line width of the metal trace layer 11, then the planarization layer 14 only covers the metal trace layer 11 and the insulating layer 13, and does not cover the metal repair layer 12). By setting the depth of the groove 30 to be greater than the thickness of the metal repair layer 12, and / or the width of the groove 30 to be greater than the line width of the metal repair layer 12, the interface between the planarization layer 14 and the insulating layer 13 around the metal repair layer 12 becomes the inner wall or bottom wall of the groove 30, thereby restricting the molten metal repair layer 12 from flowing out of the groove 30 and affecting other areas.

[0044] The following is a detailed explanation with reference to the attached diagram:

[0045] like Figure 7 As shown, Figure 7 This is a schematic diagram of the wiring structure when the groove 30 is not provided on the insulating layer 13. At this time, the interface between the metal repair layer 12, the planarization layer 14 and the insulating layer 13 is flat. The metal repair layer 12 can easily flow from the interface between the planarization layer 14 and the insulating layer 13 to other areas, causing adverse effects such as short circuits in other areas.

[0046] like Figure 8 As shown, Figure 8 This is a schematic diagram of the wiring structure when the depth of the groove 30 is greater than the thickness of the metal repair layer 12 and the width of the groove 30 is equal to the line width of the metal repair layer 12. In this case, the interface between the planarization layer 14 and the insulating layer 13 around the metal repair layer 12 forms the inner wall of the groove 30. The molten metal repair layer 12 needs to flow out through the side wall of the groove 30, thereby preventing the molten metal repair layer 12 from flowing out of the groove 30 and affecting other areas.

[0047] like Figure 9As shown, Figure 9 This is a schematic diagram of the wiring structure when the depth of the groove 30 is less than the thickness of the metal repair layer 12 and the width of the groove 30 is greater than the line width of the metal repair layer 12. In this case, the interface between the planarization layer 14 and the insulating layer 13 around the metal repair layer 12 forms the bottom wall of the groove 30. The molten metal repair layer 12 needs to flow out through the bottom wall and side wall of the groove 30, thereby preventing the molten metal repair layer 12 from flowing out of the groove 30 and affecting other areas.

[0048] like Figure 10 As shown, Figure 10 This is a schematic diagram of the wiring structure when the depth of the groove 30 is greater than the thickness of the metal repair layer 12 and the width of the groove 30 is greater than the line width of the metal repair layer 12. In this case, the interface between the planarization layer 14 and the insulating layer 13 around the metal repair layer 12 forms the bottom wall of the groove 30. The molten metal repair layer 12 needs to flow out through the bottom wall and side wall of the groove 30. Furthermore, since the depth of the groove 30 is greater than the thickness of the metal repair layer 12, the molten metal repair layer 12 is less likely to flow out, thereby limiting the flow of the molten metal repair layer 12 out of the groove 30 and affecting other areas.

[0049] Of course, the insulating layer 13 can also be located on the side of the metal trace layer 11 away from the metal repair layer 12. The metal trace layer 11 is located in the groove 30. In this case, the depth of the groove 30 can be greater than the total thickness of the stacked structure of the metal trace layer 11 and the metal repair layer 12, and the width of the groove 30 can be greater than the line width of the metal trace layer 11 and greater than the line width of the metal repair layer 12.

[0050] In practical applications, the groove 30 can be trapezoidal (open-mouthed), that is, the width of the side of the groove away from the bottom wall (upper width) is greater than the width of the side of the groove close to the bottom wall (lower width). In this case, the lower width of the groove 30 can be greater than the line width of the metal repair layer 12. This setting makes the preparation more convenient and simple, and also plays a buffering role.

[0051] It should be noted that the above wiring structure can be applied to display panels, specifically as sensing wiring and driving wiring in touch structures, or as anode, peripheral wiring, or wiring connecting light-emitting pixels, etc. Of course, the above wiring structure can also be applied to other devices, which are not limited here.

[0052] In practical applications, the fabrication method of the above-mentioned wiring structure can be specifically as follows:

[0053] First, an adhesive layer (either photosensitive or non-photosensitive adhesive) is coated and grooves 30 are created on the adhesive layer using exposure or etching methods.

[0054] Then, the gallium alloy is deposited using physical vapor deposition (film thickness between 1000 Å and 7500 Å) and patterned, for example, by etching gallium alloy traces (i.e., metal repair layer 12) using acidic solutions (such as any one or a mixture of two or more of hydrochloric acid, nitric acid, phosphoric acid, and acetic acid).

[0055] Finally, a metal film (the specific material can be Mo, Ti, or Al, or a stack of the above metals) is deposited on top of the gallium alloy trace (i.e., the metal repair layer 12), and the metal film is patterned (etched) to form the metal trace layer 11.

[0056] For the scheme of first forming the metal trace layer 11 and then forming the metal repair layer 12, the specific preparation method is similar to the above method, and will not be repeated here.

[0057] Compared with the prior art, when the metal trace layer 11 or the metal repair layer 12 or both of them break, the present invention only needs to heat the display panel to a first temperature to melt the metal repair layer 12 into a molten state. The molten metal repair layer 12 not only repairs its own breakage, but also penetrates into the crack 20 of the broken metal trace layer 11 to repair the metal trace layer 11, thereby achieving the function of repairing broken lines and improving the service life of the display panel.

[0058] The second embodiment of the present invention relates to a display panel, including: a wiring structure as described above, and light-emitting pixels connected to the wiring structure. The wiring structure can be a sensing wiring or a driving wiring in a touch structure, or it can be an anode, a peripheral wiring, or a wiring connecting the light-emitting pixels, etc., and is not limited here.

[0059] Since the first embodiment is a display panel embodiment corresponding to the first embodiment, this embodiment can be implemented in conjunction with the first embodiment. The relevant technical details mentioned in the first embodiment remain valid in this embodiment, and the technical effects achievable in the first embodiment can also be achieved in this embodiment. To reduce repetition, they will not be repeated here. Correspondingly, the relevant technical details mentioned in this embodiment can also be applied to the first embodiment.

[0060] Those skilled in the art will understand that the above embodiments are specific examples of implementing the present invention, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of the present invention.

Claims

1. A wiring structure, characterized in that, include: Metallic trace layer; A metal repair layer is disposed on one side of the metal trace layer and in contact with the metal trace layer; When the metal trace layer breaks, the metal repair layer melts at a first temperature and fills the crack in the metal trace layer. An insulating layer is located on the side of the metal repair layer away from the metal trace layer and has a groove, the width of the groove on the side away from the bottom wall is greater than the width of the groove on the side near the bottom wall, and the metal repair layer is located in the groove.

2. The wiring structure according to claim 1, characterized in that, The first temperature is greater than or equal to 60 degrees Celsius and less than or equal to 90 degrees Celsius; The melting point of the metal trace layer is greater than or equal to 200 degrees Celsius.

3. The wiring structure according to claim 1, characterized in that, The material of the metal repair layer is a gallium alloy.

4. The wiring structure according to claim 3, characterized in that, The gallium alloy contains gallium by mass of 75% or more and 90% or less.

5. The wiring structure according to claim 1, characterized in that, The pattern of the metal repair layer is the same as the pattern of the metal trace layer.

6. The wiring structure according to claim 5, characterized in that, The metal repair layer includes an overlapping region that overlaps with the metal trace layer, and the linewidth of the metal repair layer located in the overlapping region is greater than or equal to 0.8 times the linewidth of the metal trace layer.

7. The wiring structure according to claim 6, characterized in that, The linewidth of the metal repair layer is greater than or equal to the linewidth of the metal trace layer, and the metal repair layer completely covers the metal trace layer.

8. The wiring structure according to claim 1, characterized in that, Along the stacking direction of the metal trace layer and the metal repair layer, the depth of the groove is greater than the thickness of the metal repair layer; And / or, in the stacking direction perpendicular to the metal trace layer and the metal repair layer, the width of the groove is greater than the line width of the metal repair layer.

9. The wiring structure according to any one of claims 1 to 8, characterized in that, In the stacking direction perpendicular to the metal trace layer and the metal repair layer, the width of the groove is more than 1.5 times the line width of the metal repair layer.

10. The wiring structure according to any one of claims 1 to 8, characterized in that, The routing structure also includes a planarization layer covering the metal routing layer, the metal repair layer, and the insulating layer.

11. A display panel, characterized in that, include: The wiring structure as described in any one of claims 1 to 10, and the light-emitting pixel connected to the wiring structure.

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