Low temperature solder in photonic devices

By using solder connections with temperatures below the adhesive curing temperature in photonic devices, the problem of testing photonic devices after photonic die coupling was solved, enabling early fault identification and rejection of photonic components, improving production yield and reducing costs.

CN114365278BActive Publication Date: 2026-07-03CISCO TECHNOLOGY INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CISCO TECHNOLOGY INC
Filing Date
2020-09-21
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In the existing technology, the reflow temperature of the solder connection of photonic devices is higher than the curing temperature of the adhesive, which means that the optical devices can only be tested after the photonic die is coupled to the substrate, which increases production costs and reduces production yield.

Method used

Using solder bonding with a temperature lower than the adhesive curing temperature, the optical components are first attached to the photonic die, and then the solder bond is formed by reflow at a low temperature, allowing electrical and optical performance testing to be performed before the photonic die is attached to the substrate.

Benefits of technology

By using low-temperature soldering, defective photonic components can be identified and rejected before they are separated from the substrate, thereby improving production yield and reducing production costs.

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Abstract

A photonic device includes a photonic component and a substrate coupled to the photonic component. The photonic component includes a photonic die and optics, the optics being coupled to the photonic die using an adhesive to form an optical connection between the optics and the photonic die. The photonic component is coupled by reflowing multiple solder joints at a temperature below the curing temperature of the adhesive.
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Description

Technical Field

[0001] The embodiments presented in this disclosure generally relate to the formation of photonic devices. More specifically, the embodiments disclosed herein utilize low-temperature solder to form photonic devices. Background Technology

[0002] Photonic devices are used to transmit and receive optical signals in optical communication systems. A photonic device can be formed by attaching a photonic assembly (having one or more optics (e.g., fiber arrays and / or lasers)) and a photonic die to a substrate. The optics are attached to the photonic die using adhesive, and the photonic die is coupled to the substrate using reflow solder joints. Attached Figure Description

[0003] To gain a more detailed understanding of the features described above, a more specific description of the disclosure, which has been briefly outlined above, can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate typical embodiments and should not be considered limiting; other equally effective embodiments are also contemplated.

[0004] Figure 1 This is a schematic diagram of a photonic device according to one or more embodiments.

[0005] Figure 2 This is a schematic diagram of a photonic component according to one or more embodiments.

[0006] Figure 3 and Figure 4 This is a schematic diagram of a photonic device according to one or more embodiments.

[0007] Figure 5 This is a flowchart of a method for forming a photonic device according to one or more embodiments.

[0008] Figure 6 This is a flowchart of a method for forming a photonic device according to one or more embodiments.

[0009] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. Elements disclosed in one embodiment are expected to be usefully used in other embodiments without specific description. Detailed Implementation

[0010] Overview

[0011] In many cases, the reflow temperature of the solder joint is higher than the curing temperature of the adhesive. Therefore, after attaching the photonic die to the substrate, the optics are attached to the photonic die. In this situation, the electrical and optical performance of the photonic assembly cannot be tested until the photonic die is coupled to the substrate and one or more optics are attached to the photonic die. Therefore, if any electrical or optical performance problems are found during testing, the entire photonic device will be scrapped, leading to increased production costs and reduced production yield.

[0012] One embodiment presented in this disclosure describes a method for forming a photonic device, including forming a photonic assembly and attaching the photonic assembly to a substrate. The photonic assembly is formed by attaching an optical element to a photonic die using an adhesive to create an optical connection between the optical element and the photonic die. Furthermore, the photonic assembly is attached to the substrate by reflow forming one or more solder joints between the photonic assembly and the substrate. Additionally, the reflow temperature of the one or more solder joints is lower than the curing temperature of the adhesive.

[0013] One embodiment presented in this disclosure describes a photonic device including a photonic component and a substrate coupled to the photonic component. The photonic component includes optics coupled to a photonic die via an adhesive to form an optical connection between the optics and the photonic die. The photonic component also includes a plurality of solder joints having a reflow temperature below the curing temperature of the adhesive.

[0014] One embodiment presented in this disclosure describes a photonic assembly. The photonic assembly includes a photonic die and optics coupled to the photonic die via an adhesive. The adhesive forms an optical connection between the optics and the photonic die. The photonic assembly also includes a plurality of solder joints having a reflow temperature lower than the curing temperature of the adhesive.

[0015] Example Implementation

[0016] In various embodiments, photonic devices are formed by attaching one or more optics to a photonic die before it is attached to a substrate. An adhesive is used to attach the optics to the photonic die, and this adhesive has a curing temperature higher than the reflow temperature of the solder joint formed between the photonic die and the substrate. In such embodiments, because the adhesive is not negatively affected by the solder reflow process, the electrical and / or optical connections between the optics(s) and the photonic die(s) can be tested before the photonic die(s) is attached to the substrate. For example, using a solder joint with a reflow temperature lower than the adhesive's curing temperature ensures that the cured adhesive does not weaken during the reflow process and ensures proper alignment between the optics and the photonic die. Therefore, damage to the electrical and / or optical connections between the optics and the photonic die is mitigated. Furthermore, because the photonic components can be tested before being attached to the substrate, defective photonic components can be identified and discarded before the photonic device is formed, improving production yield and reducing production costs.

[0017] Figure 1 A photonic device 100 according to one or more embodiments is illustrated. The photonic device 100 includes a photonic component 102 coupled to a substrate 150. In various embodiments, the photonic device 100 may be referred to as a photonic optical engine. For example, the photonic device 100 may be a transceiver of a fiber optic system. In one or more embodiments, the photonic device 100 may perform at least one of the following: transmitting an optical signal or receiving an optical signal. Furthermore, the photonic device 100 may convert an optical signal into an electrical signal and / or convert an electrical signal into an optical signal.

[0018] The photonic assembly 102 includes an optics device 120, a photonic die 110, and a solder joint 140. The optics device 120 is coupled to the photonic die 110 via an adhesive 130. The adhesive 130 forms an optical connection between the optics device 120 and the photonic die 110. In one embodiment, the adhesive 130 is disposed on at least a portion of the surface 121 of the optics device 120 and / or at least a portion of the surface 111 of the photonic die 110. The adhesive 130 may have a curing temperature less than or equal to about 160 degrees Celsius. In other embodiments, the curing temperature of the adhesive 130 may be in the range of about 120 degrees Celsius to about 160 degrees Celsius. Furthermore, the adhesive 130 may have a curing temperature less than about 120 degrees Celsius or greater than about 160 degrees Celsius. The adhesive 130 may be an ultraviolet (UV) curable adhesive. Alternatively, the adhesive 130 may be a visible light curable adhesive. Furthermore, the adhesive 130 may be an optically transparent adhesive. Furthermore, adhesive 130 can be one or more of the following: high-strength optical adhesive, low-stress optical adhesive, solvent-free adhesive, low-shrinkage adhesive, adhesive with low degassing properties, and one-component adhesive. Additionally, adhesive 130 can include gel viscosity. Alternatively or concurrently, adhesive 130 can include medium viscosity and be capable of filling the gap between optical device 120 and photonic die 110. Furthermore, adhesive 130 can have a refractive index of about 1.4 or less. Alternatively, the refractive index of adhesive 130 can be greater than about 1.4. For example, the refractive index of adhesive 130 can be about 1.6. However, adhesives with a refractive index greater than 1.6 can be used.

[0019] Optical device 120 provides a path for transmitting optical signals to and / or from photonic device 100. In one or more embodiments, optical device 120 may be an optical fiber array comprising one or more optical fibers. Furthermore, the optical fiber array may be a one-dimensional array or a two-dimensional array.

[0020] In one or more embodiments, the photonic chip 110 includes a semiconductor substrate on which any number of optical elements (e.g., optical modulators, waveguides, amplifiers, etc.) are disposed. For example, the photonic chip 110 can convert optical signals into electrical signals, modulate optical signals, demodulate optical signals, and / or convert electrical signals into optical signals. In one embodiment, the photonic chip 110 includes an optical coupler that transmits and / or receives optical signals from the optical device 120.

[0021] Solder connections 140 are formed on the surface 112 of the photonic die 110. Solder connections 140 include input / output (I / O) pads 141 and solder bumps 142. In one embodiment, forming a solder connection includes forming I / O pads 141 on the surface 112 of the photonic die 110. I / O pads 141 may be part of a redistribution layer (RDL) of the photonic die 110. I / O pads 141 can be formed according to various photolithography and metallization processes. An exemplary metallization process is under-bump metallization; however, in other embodiments, other metallization processes may be used to form I / O pads 141.

[0022] Solder bumps 142 of solder connections 140 are formed on I / O pads 141. Furthermore, solder bumps 142 are reflowed to form electrical and mechanical connections between the photonic die 110 and the substrate 150. In one embodiment, the reflow temperature of solder bumps 142 is lower than the curing temperature of adhesive 130. For example, the reflow temperature of solder bumps 142 is lower than 160 degrees Celsius. However, in other embodiments, the reflow temperature of solder bumps 142 can be greater than 160 degrees Celsius, as long as the reflow temperature is lower than the curing temperature of adhesive 130. Solder bumps 142 can be formed from various types of solder. In one or more embodiments, solder bumps 142 are formed from one or more of the following: indium (IN), tin (SN), silver (Ag), and bismuth (Bi), etc. For example, solder bump 142 can be formed from In49Sn, SnIn52, In, SnBi58, In-3Ag, In90Sn10 or In67Bi, etc.

[0023] The substrate 150 is coupled to the photonic component 102 via solder connections 140, and the substrate 150 includes I / O pads 151. The I / O pads 151 are coupled to the I / O pads 141 of the photonic die 110 via corresponding solder bumps 142. In one or more embodiments, the substrate 150 may be a printed circuit board (PCB).

[0024] In many implementations, the reflow temperature of conventional solder bumps is higher than the curing temperature of the adhesive used to couple optics to the photonic die. Therefore, optics are typically coupled to the photonic die after it has been coupled to the substrate. However, if a failure of the photonic assembly is detected after the photonic die has been coupled to substrate 150, the entire photonic device is considered unusable and scrapped. However, employing solder bumps (e.g., solder bump 142) with a reflow temperature lower than the curing temperature of the adhesive (e.g., adhesive 130) prevents the adhesive from weakening during the reflow process. This mitigates movement of the optics (e.g., optics 120) relative to the photonic die (e.g., photonic die 110) and avoids any misalignment between the optics and the photonic die. In one embodiment, employing solder bumps with a reflow temperature lower than the curing temperature of the adhesive allows the optics to be attached to the photonic die before it is coupled to the substrate (e.g., substrate 150). Therefore, the corresponding photonic assembly can be electrically and / or optically tested before being coupled to the substrate. Therefore, photonic components with one or more electrical or optical faults can be identified before integration with the substrate, and faulty photonic components, rather than the entire photonic device, can be scrapped. Thus, faulty photonic components can be removed from production before being coupled to the substrate 150, thereby reducing the failure rate of the corresponding photonic device and improving production yield.

[0025] Figure 2 A photonic assembly 202 according to one or more embodiments is illustrated. Photonic assembly 202 and photonic assembly 102 are configured similarly to each other. Compared to photonic assembly 102, photonic assembly 202 further includes an optics device 210 and an electronic integrated circuit (IC) (EIC) 220. The optics device 210 may be a laser, photodiode, lens, prism, isolator, and optical multiplexer / demultiplexer (MUX / DMUX) device, etc. In various embodiments, photonic assembly 202 may include more than one optics device 210. For example, photonic assembly 202 may include a laser and a lens. However, in other embodiments, photonic assembly 202 may include other combinations of optics. The optics device 210 can be coupled to the optical interface of photonic die 110 via solder 230.

[0026] EIC 220 is coupled to surface 113 of photonic die 110 via connector 250. Connector 250 may be a solder connector, and coupling EIC 220 to surface 113 of photonic die 110 may include a solder connector for reflowing connector 250. Because connector 250 may be reflowed before optics 120 is attached, the reflow temperature of connector 250 may exceed the curing temperature of adhesive 130 and connector 140. In other embodiments, the reflow temperature of connector 250 may be lower than the curing temperature of adhesive 130.

[0027] In various embodiments, EIC 220 processes and / or generates electrical signals. For example, EIC 220 may process analog and / or digital signals transmitted from photonic component 202. Alternatively, EIC 220 may process analog and / or digital signals received by photonic component 202. In one embodiment, EIC 220 generates control signals for modulating optical signals in optics 210. Furthermore, EIC 220 may analyze electrical signals based on received optical signals, transmit electrical signals to other circuits based on received optical signals, and / or provide power to photonic die 110 for analyzing optical signals or converting optical signals into electrical signals or forming electrical signals. In various embodiments, EIC 220 may be omitted and the functions of EIC 220 may be performed by photonic die 110.

[0028] Figure 3 A photonic device 300 according to one or more embodiments is shown. The configuration of the photonic device 300 is similar to that of the photonic device 100. As shown, the photonic device 300 includes a photonic component 302 and a substrate 150.

[0029] Photonic assembly 302 includes a photonic die 310, optics 120, and solder connections 140. Photonic assembly 302 may also include one or more of a laser 314 and an EIC 220. Photonic die 310 includes a photonic IC (PIC) 320 embedded within a mold compound 330. Furthermore, one or more vias 340 may be embedded within the mold compound 330. In various embodiments, one or more interposers may also be embedded within the mold compound 330. Additionally, photonic assembly 302 may include one or more passive elements.

[0030] According to Figure 1 In more detail, photonic component 302 is coupled to substrate 150 via solder connection 140. Photonic die 310 may be part of a larger wafer on which one or more optical devices are attached. After the optical devices are attached, the wafer may be diced to form individual photonic components (e.g., photonic component 302).

[0031] In one or more embodiments, EIC 220 is coupled to PIC 320. PIC 320 can perform one or more of the functions described above with respect to photonic die 110. In various embodiments, PIC 320 provides an optical interface for sending optical signals to and / or receiving optical signals from photonic assembly 302. Furthermore, molding compound 330 can be any epoxy resin or substrate used for fabricating reconstructed wafers.

[0032] One or more vias 340 provide an electrical path between surface 312 (e.g., bottom surface) and surface 311 (e.g., top surface) of photonic component 302. For example, one or more vias 340 allow electrical signals to be transmitted between surface 311 and surface 312.

[0033] In various embodiments, the optics 120 is coupled to the photonic die 310 at interface 350 via an adhesive (e.g., adhesive 130). Additionally, the laser 314 may be coupled to the photonic die at interface 352 via solder (e.g., solder 230).

[0034] Figure 4 A photonic device 400 according to one or more embodiments is shown. The configuration of the photonic device 400 is similar to that of the photonic device 100. As shown, the photonic device 400 includes a photonic component 402 and a substrate 150.

[0035] Photonic assembly 402 includes a photonic die 410 and optics 120. In one or more embodiments, photonic assembly 402 further includes one or more of a laser 314 and an EIC 220. In various embodiments, optics 120 is coupled to photonic die 310 at interface 450 via an adhesive (e.g., adhesive 130). Furthermore, laser 314 may be coupled to photonic die at interface 452 via solder (e.g., solder 230). Solder 230 may be a gold-tin (AuSn) eutectic solder. Additionally, solder 230 may have a eutectic temperature of 280 degrees Celsius. Alternatively, solder 230 may be formed of other alloys having other reflow temperatures.

[0036] Photonic die 410 is configured similarly to photonic die 110. For example, photonic die 410 may include one or more IC elements configured to perform the functions described with respect to photonic die 110. In various embodiments, photonic die 410 also includes one or more vias 440. These vias 440 provide an electrical path (e.g., a through-silicon via (TSV)) between surface 412 and surface 411 of photonic die 410. For example, the one or more vias 440 may transmit electrical signals from surface 412 and surface 411 of photonic die 410.

[0037] Figure 5This is a flowchart of a method 500 for forming a photonic device according to one or more embodiments. At operation 510, an optical device 120 is attached to a photonic die 110. In one embodiment, the optical device 120 is attached to the photonic die 110 via an adhesive 130. The adhesive 130 may be disposed on at least a portion of the surface 121 of the optical device and / or on at least a portion of the surface 111 of the photonic die 110. In one embodiment, the adhesive 130 forms an optical connection between the optical device 120 and the photonic die 110. In various embodiments, the adhesive 130 forms a mechanical connection between the optical device 120 and the photonic die 110. In one or more embodiments, the adhesive 130 may be part of the optical connection (e.g., light signals travel through the adhesive). Furthermore, in one or more embodiments, attaching the optical device 120 to the photonic die 110 includes aligning a light source (e.g., a fiber array) with the photonic die 110 (operation 512). Furthermore, at operation 514, a second optical element (e.g., optical element 210) can be aligned with the photonic die 110. In various embodiments, the second optical element is attached to the photonic die 110 via solder 230. Furthermore, the second optical element is one of the following: a laser, a photodiode, a lens, a prism, an isolator, and an optical MUX / DMUX device, etc. In any case, an adhesive maintains alignment by establishing a mechanical connection between the photonic die 110 and the optical element 120.

[0038] At operation 520, a photonic component (e.g., photonic component 102, 202, 302, or 402) is attached to substrate 150. For example, the photonic component can be attached to substrate 150 via solder joint 140. Attaching the photonic component to substrate 150 via solder joint 140 includes reflowing the solder joint 140, as shown in operation 522. The solder joint 140 is reflowed at a temperature below the curing temperature of the adhesive 130. For example, the solder joint 140 includes solder bumps 142 formed from solder with a reflow temperature below the curing temperature of the adhesive 130. In one embodiment, the solder joint is reflowed at a temperature below approximately 160 degrees Celsius.

[0039] Figure 6 This is a flowchart of a method 600 for forming a photonic device according to one or more embodiments. At operation 610, an optical device 120 is attached to a photonic die 110 to form a photonic assembly (e.g., photonic assembly 102, 202, 302, or 402). Operation 610 is similar to the above description regarding... Figure 5 For a more detailed description of operation 510.

[0040] At operation 620, solder connections 140 are formed on a photonic die (e.g., photonic die 110, 310, or 410). In one embodiment, forming solder connections 140 includes forming I / O pads on the bottom surface of the photonic die (e.g., surface 112, 312, or 412) and forming solder bumps 142 on each I / O pad 141.

[0041] At operation 630, the photonic component is tested. For example, the optical and / or electrical properties of the photonic component can be tested. In one embodiment, testing the electrical properties of the photonic component involves testing the electrical connections between the various elements of the photonic component. For example, refer to... Figure 1 The electrical performance of the photonic component 102 is tested, as is the electrical connection between the optical device 120 and the photonic chip 110. Additionally, reference... Figure 2 The electrical performance of the photonic assembly 202 is tested using the EIC 220 and the electrical connection between the photonic chip 110. A photonic assembly can be considered to have an electrical fault when the electrical connection between one or more optical elements (e.g., optical device 120) and the photonic chip (e.g., photonic chip 110) is determined to be faulty. For example, a faulty electrical connection may prevent the transmission of electrical signals between one or more optical elements (e.g., optical device 120) and the photonic chip (e.g., photonic chip 110).

[0042] In various embodiments, testing the optical performance of the photonic component involves testing the optical connections between the various elements of the photonic component. For example, refer to... Figure 1 The optical performance of the photonic component 102 is tested, as is the optical connection between the optical device 120 and the photonic chip 110. Additionally, reference... Figure 2 The optical performance of the photonic assembly 202 is tested using the optical connection between the EIC 220 and the photonic die 110. The photonic assembly is considered to have an optical connection fault when the optical connection between one or more optical elements and the photonic die is determined to be faulty. For example, a faulty optical connection may prevent the transmission of optical signals between one or more optical elements (e.g., optics 120) and the photonic die (e.g., photonic die 110). In one embodiment, the optical connection fault may be due to misalignment between the optical elements (e.g., optics 120) and the photonic die (e.g., photonic die 110).

[0043] In one or more embodiments, operation 620 may occur before operation 630. Alternatively, operation 620 may occur after operation 630. Furthermore, in one or more embodiments, method 600 may include the operation of dicing a wafer to form various photonic components (e.g., photonic components 102, 202, 302, or 402). For example, photonic die 110 may be part of a larger wafer on which one or more optics are attached. After the optics are attached, the wafer may be diced to form the various photonic components. In one embodiment, solder bumps 142 are formed on I / O pads 141 before the wafer is diced to form the various photonic components. Alternatively, solder bumps 142 may be formed on I / O pads 141 after the wafer is diced to form the various photonic components. Furthermore, after the wafer has been diced to form the various photonic components, the photonic components may be tested as described in operation 630.

[0044] At operation 640, a photonic component (e.g., photonic component 102, 202, 302, or 402) is attached to substrate 150. For example, the photonic component can be attached to substrate 150 via solder joint 140. In one or more embodiments, the photonic component (e.g., photonic component 102, 202, 302, or 402) is attached to substrate 150 via solder joint 140 by reflowing the solder joint. The solder joint 140 is reflowed at a temperature below the curing temperature of adhesive 130. In one embodiment, the solder joint is reflowed at a temperature below approximately 160 degrees Celsius.

[0045] At operation 650, the solder of solder joint 140 (e.g., the solder of solder bump 142) is converted into an intermetallic compound. In one embodiment, all the solder of each solder joint 140 may be converted into an intermetallic compound. In other embodiments, at least a portion of the solder of each solder joint 140 is converted into an intermetallic compound. For example, at least 50% of the solder of each solder joint 140 is converted into an intermetallic compound. In one embodiment, the solder of solder joint 140 may be referred to as an all-intermetallic compound when at least 90% of the solder of each solder joint 140 is converted into an all-intermetallic compound. In various embodiments, a first portion of the solder of solder joint 140 is converted into an intermetallic compound when solder bump 142 is formed on I / O pad 141. Furthermore, a second portion of the solder of solder joint 140 is converted into an intermetallic compound in response to a heating process for curing adhesive 130 to attach optical device 120 to photonic die 110. In response to a reflow process for attaching photonic components (e.g., photonic components 102, 202, 302, or 402) to substrate 150, a third portion of the solder on the solder joint 140 is converted into an intermetallic compound. Finally, in response to a heating (or annealing) process as described in operation 650, a fourth portion of the solder on the solder joint 140 is converted into an intermetallic compound.

[0046] In one embodiment, converting the solder into an intermetallic compound includes heating the photonic device (e.g., photonic device 100, 300, 400) for a period of time at a temperature below the reflow temperature of the solder joint 140 and below the curing temperature of the binder 130. In various embodiments, heating the photonic device includes heating the respective photonic component (e.g., photonic component 102, 202, 302, or 402) and the substrate (e.g., substrate 150). The temperature can be in the range of about 100 degrees Celsius to about 120 degrees Celsius. However, in other embodiments, the temperature can be below about 100 degrees Celsius or above about 120 degrees Celsius. Furthermore, the time period can be in the range of about 1 hour to about 3 hours. However, in other embodiments, a time period of less than about 1 hour or greater than about 3 hours can be used. In various embodiments, converting the solder of the solder joint 140 into an intermetallic compound reduces the risk of remelting of the solder bump 142 during the manufacturing process because the conversion reduces the risk of remelting of the solder bump 142. Therefore, the possibility of a disconnection between the photonic components (e.g., photonic components 102, 202, 302 or 402) and the substrate 150 can be reduced.

[0047] Various embodiments have been referenced in this disclosure. However, the scope of this disclosure is not limited to the embodiments specifically described. Rather, any combination of the described features and elements, whether or not associated with different embodiments, is contemplated to achieve and practice the intended embodiments. Furthermore, when elements of an embodiment are described in the form of "at least one of A and B," it will be understood that embodiments including element A alone, including element B alone, and including both elements A and B are contemplated. Moreover, while some embodiments disclosed herein may achieve advantages over other possible solutions or prior art, whether a particular advantage is achieved by a given embodiment does not limit the scope of this disclosure. Therefore, the aspects, features, embodiments, and advantages disclosed herein are illustrative only and should not be considered elements or limitations of the appended claims unless expressly stated in one or more claims. Similarly, references to "the invention" should not be construed as a generalization of any inventive subject matter disclosed herein and should not be considered elements or limitations of the appended claims unless expressly stated in one or more claims.

[0048] As those skilled in the art will understand, the embodiments disclosed herein can be embodied as systems, methods, or computer program products. Therefore, embodiments can take the form of entirely hardware embodiments, entirely software embodiments (including firmware, resident software, microcode, etc.), or embodiments combining software and hardware aspects, which can be collectively referred to herein as “circuit,” “module,” or “system.” Furthermore, embodiments can take the form of computer program products contained in one or more computer-readable media having computer-readable program code embodied thereon.

[0049] Program code embodied on a computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, fiber optic cable, RF, or any suitable combination thereof.

[0050] Computer program code used to perform the operations of embodiments of this disclosure may be written in any combination of one or more programming languages, including object-oriented programming languages ​​(e.g., Java, Smalltalk, C++, etc.) and traditional procedural programming languages ​​(e.g., the "C" programming language or similar programming languages). The program code may be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0051] Various aspects of this disclosure are described herein with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments set forth in this disclosure. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams.

[0052] These computer program instructions may also be stored in a computer-readable medium that can direct a computer, other programmable data processing apparatus or other device to operate in a particular manner, causing the instructions stored in the computer-readable medium to produce an article of art, including instructions that implement the functions / actions specified in one or more blocks of a flowchart description and / or block diagram.

[0053] Computer program instructions may also be loaded onto a computer, other programmable data processing apparatus or other equipment to cause a series of operational steps to be performed on the computer, other programmable apparatus or other equipment to produce a computer-implemented process, such that the instructions, which execute on the computer, other programmable data processing apparatus or other equipment, provide a process for implementing the functions / actions specified in one or more blocks of a flowchart description and / or block diagram.

[0054] The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments. In this regard, each block in the flowchart or block diagram may represent a module, segment, or code portion, comprising one or more executable instructions for implementing one or more specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the blocks may not appear in the order indicated in the figures. For example, depending on the functions involved, two blocks shown consecutively may actually be executed substantially simultaneously, or sometimes these blocks may be executed in reverse order. It will also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented by a dedicated hardware-based system that performs the specified functions or actions or combinations of dedicated hardware and computer instructions.

[0055] In view of the foregoing, the scope of this disclosure is defined by the appended claims.

Claims

1. A method for forming a photonic device, the method comprising: A photonic assembly is formed by attaching an optical device to a photonic die by curing an optically transparent adhesive at a curing temperature to create an optical connection between the optical device and the photonic die. as well as The photonic component is attached to the substrate by reflow forming one or more solder joints between the photonic component and the substrate, wherein the reflow temperature of the one or more solder joints is lower than the curing temperature of the optically transparent adhesive.

2. The method according to claim 1, wherein, Attaching the optical device to the photonic chip includes aligning the fiber array with the photonic chip.

3. The method according to claim 2, further comprising: The laser is attached to the photonic chip.

4. The method according to any one of the preceding claims, further comprising: Before attaching the photonic component to the substrate, at least one of electrical and optical tests is performed on the photonic component.

5. The method according to any one of claims 1-3, further comprising: The photonic component and the substrate are heated at a temperature below the reflow temperature to convert the solder of the one or more solder joints into an intermetallic compound.

6. The method according to any one of claims 1-3, wherein, The optically transparent adhesive has a curing temperature below approximately 160 degrees Celsius.

7. The method according to any one of claims 1-3, further comprising: Solder bumps are provided on the photonic die to form one or more solder connections, wherein the solder bumps include one of the following: In49Sn, SnIn52, In, SnBi58, In-3Ag, In90Sn10, and In67Bi.

8. A photonic device, comprising: Photonic components, including: Photonic chip; An optical device is coupled to a photonic chip using an optically transparent adhesive to form an optical connection between the optical device and the photonic chip, wherein the optically transparent adhesive is cured at a curing temperature to couple the optical device to the photonic chip; Multiple solder joints, the multiple solder joints having a reflow temperature lower than the curing temperature of the optically clear adhesive; and A substrate, which is coupled to the photonic component via the plurality of solder connections.

9. The photonic device according to claim 8, wherein, The optical device is a fiber optic array.

10. The photonic device according to claim 9, wherein, The photonic component also includes a laser coupled to the photonic chip.

11. The photonic device according to any one of claims 8 to 10, wherein, Each of the plurality of solder joints includes an intermetallic compound formed by heating the photonic component and the substrate at a temperature below the reflow temperature.

12. The photonic device according to any one of claims 8 to 10, wherein, The optically transparent adhesive has a curing temperature below approximately 160 degrees Celsius.

13. The photonic device according to any one of claims 8 to 10, wherein, The solder joint includes solder bumps consisting of one of the following: In49Sn, SnIn52, In, SnBi58, In-3Ag, In90Sn10, and In67Bi.

14. A photonic component, comprising: Photonic chip; An optical device is coupled to a photonic chip using an optically transparent adhesive to form an optical connection between the optical device and the photonic chip, wherein the optically transparent adhesive is cured at a curing temperature to couple the optical device to the photonic chip; as well as The first plurality of solder joints have a reflow temperature lower than the curing temperature of the optically clear adhesive.

15. The photonic component of claim 14, wherein, The optical device is a fiber optic array.

16. The photonic component of claim 15, wherein, The photonic component also includes a laser coupled to the photonic chip.

17. The photonic component according to any one of claims 14 to 16, wherein, The photonic die includes at least one of an integrated circuit and a molded compound.

18. The photonic component according to any one of claims 14 to 16, wherein, The optically transparent adhesive has a curing temperature below approximately 160 degrees Celsius.

19. The photonic component according to any one of claims 14 to 16, further comprising an integrated circuit coupled to the photonic die via a second plurality of solder connections, the reflow temperature of the second plurality of solder connections being higher than the reflow temperature of the first plurality of solder connections.

20. The photonic component according to any one of claims 14 to 16, wherein, The first plurality of solder joints include solder bumps consisting of one of the following: In49Sn, SnIn52, In, SnBi58, In-3Ag, In90Sn10, and In67Bi.

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