Full-solid-state high-voltage pulse module switch group

Abstract

The all-solid-state high-voltage pulse module switch group disclosed by the present invention includes: a DC voltage source module, a pre-stage switch module, a driving module, a voltage boosting module, a pulse compression module, and a load module; the DC voltage source module is connected to the input end of the pre-stage switch module; the driving module is connected to the control end of the pre-stage switch module; the output end of the pre-stage switch module is connected to the input end of the voltage boosting module; the output end of the voltage boosting module is connected to the input end of the pulse compression module; the output end of the pulse compression module is connected to the load module. This all-solid-state high-voltage pulse module switch group has the advantages of being simple and easy to implement, and having a stable operating frequency.

Description

Technical Field

[0001] The present invention relates to the technical field of pulse power, and particularly to a fully solid-state high-voltage pulse module switch group. Background Art

[0002] Fully solid-state high-voltage pulses have always been one of the important pursuit goals in the technical field of pulse power, and are widely used in fields such as lasers, ground-penetrating radars, high-speed cameras, and high-energy physics, with important research and practical value. The switch is the core device of the pulse power system. Among them, semiconductor solid-state switches generally have the characteristic of relatively low output voltage of a single device, and appropriate technical means often need to be adopted to achieve the output of high-voltage pulses in the system. For example, a series circuit of multiple semiconductor solid-state switch devices, a Marx circuit, or a circuit mixed with both. The series circuit of switches has high requirements for the consistency of devices, and the devices need to be screened. Otherwise, they are easily damaged during the series operation process, and a higher supply voltage and large power consumption are required when multiple tubes are cascaded. The Marx circuit is composed of multiple stages of circuits, and multiple mutually isolated multi-channel synchronous drive signals need to be provided for the switch devices. Usually, the number of optical fiber signal isolations (or transformer isolations, optocoupler isolations, etc.) is not less than the number of switch devices. Even subsequent circuit topologies such as transmission line transformers are required to complete the power synthesis of the pulses to meet the requirements. Therefore, in order to achieve the synchronous triggering and isolation protection of the switch devices, the structure of the Marx circuit is relatively complex, and the output efficiency of the Marx circuit decreases significantly with the increase in the number of stages. In the Marx circuit with multiple tubes in series, each stage replaces a single switch device with multiple series switch devices, and its DC withstand voltage level is significantly improved to increase the output voltage. However, affected by the charging speed and the current overcurrent multiple borne by the switch device, it is difficult to work at a higher frequency, and the Marx circuit with multiple tubes in series also has the disadvantage of complex circuit. The above-mentioned several high-voltage pulse module switch groups have the disadvantages of complex structure, many devices used, large volume, and high cost, resulting in limited applications in many high-voltage occasions. Summary of the Invention

[0003] The purpose of the present invention is to provide a fully solid-state high-voltage pulse module switch group, which has the advantages of being simple and easy to implement and having a stable operating frequency.

[0004] The technical solution adopted by the present invention is that the fully solid-state high-voltage pulse module switch group includes: a DC voltage source module, a pre-stage switch module, a drive module, a voltage boosting module, a pulse compression module, and a load module;

[0005] The DC voltage source module is connected to the input end of the pre-stage switch module; the drive module is connected to the control end of the pre-stage switch module; the output end of the pre-stage switch module is connected to the input end of the voltage boosting module; the output end of the voltage boosting module is connected to the input end of the pulse compression module; the output end of the pulse compression module is connected to the load module.

[0006] The features of the present invention also lie in that

[0007] the driving module is a driver; the load module is a load resistor R L .

[0008] The DC voltage source module includes a DC voltage source, a current-limiting resistor R1 and an energy storage capacitor C1;

[0009] The DC voltage source provides a positive DC voltage;

[0010] The V in + terminal of the DC voltage source is connected to the first end of the current-limiting resistor R1, and the V in - terminal of the DC voltage source is respectively connected to the second end of the energy storage capacitor C1, the pulse compression module and the first end of the load resistor R L ; the second end of the current-limiting resistor R1 is respectively connected to the first end of the energy storage capacitor C1 and the pre-stage switching module.

[0011] The pre-stage switching module includes a dynamic voltage-sharing resistor R2, a dynamic voltage-sharing diode D1, a dynamic voltage-sharing capacitor C2, a static voltage-sharing resistor R3 and a pre-stage switching device;

[0012] After the pre-stage switching device is turned on, all the switching devices in the voltage boosting module and the pulse compression module are caused to break down by themselves;

[0013] The parameter settings of the voltage equalizing devices must ensure that the voltage division value of the pre-stage switching device is limited below the breakdown voltage to ensure the safety and stability of the pre-stage switching device;

[0014] The pre-stage switching device is a MOSFET, an IGBT or a thyristor; when the pre-stage switching device is a MOSFET, the first end of the dynamic voltage-sharing resistor R2, the anode of the dynamic voltage-sharing diode D1, the first end of the static voltage-sharing resistor R3, and the drain of the pre-stage switching device MOSFET are all connected to the second end of the current-limiting resistor R1;

[0015] The second end of the dynamic voltage-sharing resistor R2 is respectively connected to the cathode of the dynamic voltage-sharing diode D1 and the first end of the dynamic voltage-sharing capacitor C2;

[0016] The source of the pre-stage switching device MOSFET is respectively connected to the second end of the static voltage-sharing resistor R3, the second end of the dynamic voltage-sharing capacitor C2 and the input end of the voltage boosting module; the gate of the pre-stage switching device MOSFET is connected to the output end of the driver.

[0017] The voltage boosting module includes a semiconductor discharge tube group, a dynamic voltage-sharing resistor R4, a dynamic voltage-sharing diode D2, a dynamic voltage-sharing capacitor C3 and a static voltage-sharing resistor R5;

[0018] The first ends of the semiconductor discharge tube groups are respectively connected to the source electrode of the pre-stage switching device MOSFET, the first end of the static voltage-sharing resistor R5, the first end of the dynamic voltage-sharing resistor R4, and the anode of the dynamic voltage-sharing diode D2;

[0019] The second end of the dynamic voltage-sharing resistor R4 is respectively connected to the cathode of the dynamic voltage-sharing diode D2 and the first end of the dynamic voltage-sharing capacitor C3;

[0020] The last ends of the semiconductor discharge tube groups are respectively connected to the second end of the static voltage-sharing resistor R5, the second end of the dynamic voltage-sharing capacitor C3, and the input end of the pulse compression module.

[0021] The compression module includes an energy storage capacitor C4, a semiconductor discharge tube TSS0, and a pulse compression diode;

[0022] The first end of the energy storage capacitor C4 is connected to the V end of the DC voltage source in - The second end of the energy storage capacitor C4 and the first end of the semiconductor discharge tube TSS0 are both connected to the last end of the semiconductor discharge tube group; the last end of the semiconductor discharge tube TSS0 is connected to the anode of the pulse compression diode, and the cathode of the pulse compression diode is connected to the second end of the load resistor R L ;

[0023] The conduction speed of the semiconductor discharge tube is less than 1 ns.

[0024] The pulse compression diode includes an upper electrode, a p-type epitaxial layer, a semi-insulating layer, a lower p-type layer, and a lower electrode arranged in sequence from top to bottom; the upper electrode is connected to the last end of the semiconductor discharge tube TSS0, and the lower electrode is connected to the second end of the load resistor R L ;

[0025] The fastest turn-on time of the pulse compression diode is 500 ps.

[0026] The upper electrode is a gold-germanium-nickel ohmic contact electrode or a silver electrode or a platinum electrode; the p-type epitaxial layer is a p+GaAs upper epitaxial layer, the epitaxial thickness is 2 nm - 100 um, and the epitaxial doping concentration is 1×10 14 / cm 3 -9×10 20 / cm 3 ; the semi-insulating layer is a semi-insulating GaAs layer or an epitaxial intrinsic gallium arsenide layer or an epitaxial low-temperature semi-insulating gallium arsenide layer; when the semi-insulating layer is a semi-insulating GaAs layer, its electron mobility is 1000 cm 2 / Vs - 12000 cm 2 / Vs, and the resistivity is 10 6 -10 10 Ω / cm; the lower p-type layer is a p+GaAs lower epitaxial layer, the epitaxial thickness is 2 nm - 100 um, and the epitaxial doping concentration is 1×1014 / cm 3 -9×10 20 / cm 3 ; The lower electrode is a gold-germanium-nickel ohmic contact electrode, a silver electrode, or a platinum electrode.

[0027] The beneficial effects of the present invention are as follows:

[0028] The all-solid-state high-voltage pulse module switch group provided by the present invention uses only one stage of the driving module to control the pre-stage switch module, and realizes the high-voltage switch function through the voltage boosting technology of the voltage boosting module; the subsequent circuit effectively utilizes the compression characteristics of the pulse compression module to output a high-voltage fast pulse on the load module. The all-solid-state high-voltage pulse module switch group provided by the present invention has the advantages of being simple and easy to implement, having a stable operating frequency, good heat dissipation effect, high efficiency, small volume, and low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic block diagram of the all-solid-state high-voltage pulse module switch group of the present invention;

[0030] Figure 2 is a circuit diagram of Embodiment 1 of the all-solid-state high-voltage pulse module switch group of the present invention;

[0031] Figure 3 is a circuit diagram of Embodiment 2 of the all-solid-state high-voltage pulse module switch group of the present invention;

[0032] Figure 4 is a circuit diagram of Embodiment 3 of the all-solid-state high-voltage pulse module switch group of the present invention;

[0033] Figure 5 is a structural diagram of the pulse compression diode in the all-solid-state high-voltage pulse module switch group of the present invention.

[0034] In the figure, 10. DC voltage source module, 20. Pre-stage switch module, 30. Driving module, 40. Voltage boosting module, 50. Pulse compression module, 60. Load module;

[0035] 201. Pre-stage switch device MOSFET, 501. Pulse compression diode;

[0036] 51. Upper electrode, 52. p-type epitaxial layer, 53. Semi-insulating layer, 54. Lower p-type layer, 55. Lower electrode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0037] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0038] The present invention provides an all-solid-state high-voltage pulse module switch group, as Figure 1As shown in the figure, it includes: a DC voltage source module 10, a pre-stage switch module 20, a drive module 30, a voltage boosting module 40, a pulse compression module 50, and a load module 60;

[0039] The DC voltage source module 10 is connected to the input end of the pre-stage switch module 20 and is used to provide a positive DC voltage to the pre-stage switch module 20; the drive module 30 is connected to the control end of the pre-stage switch module 20 and is used to drive the pre-stage switch device in the pre-stage switch module 20; the output end of the pre-stage switch module 20 is connected to the input end of the voltage boosting module 40 and is used to further expand and boost the low pulse voltage output by the pre-stage switch module 20; the output end of the voltage boosting module 40 is connected to the input end of the pulse compression module 50 and is used to compress the pulse waveform; the output end of the pulse compression module 50 is connected to the load module 60.

[0040] The working principle of the full-solid-state high-voltage pulse module switch group principle block diagram will be described below.

[0041] When the positive voltage value provided by the DC voltage source 10 is higher than the conduction voltage of the pre-stage switch module 20, and at the same time the drive module 30 controls the pre-stage switch module 20 to drive, the pre-stage switch module 20 will be in the working state and output a low-voltage electrical pulse. After the voltage boosting module 40 works to complete the further expansion and boosting of the voltage, a high-voltage electrical pulse is output. Finally, the pulse compression module compresses the high-voltage pulse waveform to realize the output of a high-voltage fast pulse on the load.

[0042] Embodiment 1

[0043] As Figure 2 shown, it is the circuit diagram of the embodiment of the full-solid-state high-voltage pulse module switch group. Among them, the DC voltage source module 10 includes: a DC voltage source, a current-limiting resistor R1, and an energy storage capacitor C1; the pre-stage switch module 20 includes: a pre-stage switch device MOSFET201, a dynamic voltage-sharing resistor R2, a dynamic voltage-sharing diode D1, a dynamic voltage-sharing capacitor C2, and a static voltage-sharing resistor R3; the drive module 30 includes: a driver; the voltage boosting module 40 includes: a semiconductor discharge tube group, a dynamic voltage-sharing resistor R4, a dynamic voltage-sharing diode D2, a dynamic voltage-sharing capacitor C3, and a static voltage-sharing resistor R5. The semiconductor discharge tube group includes a series-parallel array structure in different forms. The semiconductor discharge tube group in this embodiment includes a first semiconductor discharge tube TSS1, a second semiconductor discharge tube TSS2, a third semiconductor discharge tube TSS3... an nth semiconductor discharge tube TSSn connected in series in sequence at the head and tail; the compression module 50 includes: an energy storage capacitor C4, a semiconductor discharge tube TSS0, and a pulse compression diode 501; the load module 60 includes: a load resistor R L .

[0044] The V of the DC voltage source in +The end is connected to the first end of the current-limiting resistor R1, and the V of the DC voltage source in - ends are respectively connected to the second end of the energy storage capacitor C1, the first end of the energy storage capacitor C4, and the first end of the load resistor R L The second end of the current-limiting resistor R1 is respectively connected to the first end of the energy storage capacitor C1, the drain of the pre-stage switching device MOSFET201, the first end of the static voltage-sharing resistor R3, the first end of the dynamic voltage-sharing resistor R2, and the anode of the dynamic voltage-sharing diode D1; the second end of the dynamic voltage-sharing resistor R2 is respectively connected to the cathode of the dynamic voltage-sharing diode D1 and the first end of the dynamic voltage-sharing capacitor C2; the source of the pre-stage switching device MOSFET201 is respectively connected to the second end of the static voltage-sharing resistor R3, the second end of the dynamic voltage-sharing capacitor C2, and the first end of the first semiconductor discharge tube TSS1. The gate of the pre-stage switching device MOSFET201 is connected to the output end of the driver. The tail end of the first semiconductor discharge tube TSS1 is connected to the first end of the second semiconductor discharge tube TSS2. The tail end of the second semiconductor discharge tube TSS2 is connected to the first end of the third semiconductor discharge tube TSS3. The remaining multiple semiconductor discharge tubes are connected end to end in sequence to form a series. The first end of the first semiconductor discharge tube TSS1 is respectively connected to the first end of the static voltage-sharing resistor R5, the first end of the dynamic voltage-sharing resistor R4, and the anode of the dynamic voltage-sharing diode D2. The second end of the dynamic voltage-sharing resistor R4 is respectively connected to the cathode of the dynamic voltage-sharing diode D2 and the first end of the dynamic voltage-sharing capacitor C3. The tail end of the last semiconductor discharge diode TSSn is respectively connected to the second end of the static voltage-sharing resistor R5, the second end of the dynamic voltage-sharing capacitor C3, the second end of the energy storage capacitor C4, and the first end of the semiconductor discharge tube TSS0. The tail end of the semiconductor discharge tube TSS0 is connected to the anode of the pulse compression diode 501. The cathode of the pulse compression diode 501 is connected to the second end of the load resistor R L The second end is connected.

[0045] The working principle of the circuit of the embodiment of the all-solid-state high-voltage pulse module switch group will be described below.

[0046] The DC voltage source 10 is used to provide a forward DC voltage, and charges the energy storage capacitor C1 through the current limiting resistor R1. At the same time, the drive module 30 outputs a signal to control the front-stage switch device MOSFET201 to turn on and off. The low voltage output by the front-stage switch device MOSFET201 causes the first semiconductor discharge tube TSS1, the second semiconductor discharge tube TSS2, the third semiconductor discharge tube TSS3...the nth semiconductor discharge tube TSSn to self-break down in sequence. In theory, the output voltage of the nth semiconductor discharge tube TSSn is n times the breakdown voltage of the semiconductor discharge tube TSS and the sum of the source and drain rated voltages of the front-stage switch device. Therefore, the series-connected semiconductor discharge tube TSS achieves voltage expansion and improvement. In this process, since the front-stage switch has a spike voltage at both ends of its source and drain at the moment of shutdown, the overvoltage will cause a great impact on the switch tube, especially in high-frequency, high-power, and high-voltage circuits. Therefore, in order to ensure the safety and stability of the front-stage switch device MOSFET201 and the semiconductor discharge tube TSS, static voltage balancing and dynamic voltage balancing circuits are connected in parallel at both ends of the switch device. The principle of the voltage equalization circuit of the front-stage switching device MOSFET201 is that at the moment the switch is turned off, the dynamic diode D short-circuits the dynamic resistor R, providing a discharge channel for the input current of the switch, and the dynamic capacitor C is quickly charged, and the voltage across the source and drain of the switch tube is clamped by the capacitor voltage. The same is true for the voltage equalization circuit of the semiconductor discharge tube. Subsequently, the high voltage output by the n-th-stage semiconductor discharge tube TSSn charges the capacitor C4 of the pulse compression module, and the discharge of the energy storage capacitor C4 causes the semiconductor discharge tube TSS0 and the pulse compression diode to self-breakdown. Since the conduction speed of the semiconductor discharge tube TSS0 is less than 1ns, the semiconductor discharge tube TSS0 is connected in series with the pulse compression diode, which can realize the input of the fast-loaded voltage to the pulse compression diode, further improving the compression performance of the pulse compression diode. Finally, at the load resistor R L Output high voltage fast pulse.

[0047] like Figure 5 As shown in FIG. 1 , the structure of the pulse compression diode includes: an upper electrode 51, a p-type epitaxial layer 52, a semi-insulating layer 53, a lower p-type layer 54, and a lower electrode 55. The upper electrode 51 is a gold-germanium-nickel ohmic contact electrode. The p-type epitaxial layer 52 is a p+GaAs upper epitaxial layer with an epitaxial thickness of 2 nm and an epitaxial doping concentration of 1×10 14 / cm 3 The semi-insulating layer 53 is a semi-insulating GaAs layer. When the semi-insulating layer 53 is a semi-insulating GaAs layer, its electron mobility is 1000 cm 2 / Vs, resistivity 10 6 Ω / cm. The lower p-type layer 54 is a p+GaAs lower epitaxial layer with an epitaxial thickness of 2nm and an epitaxial doping concentration of 1×10 14 / cm3 The lower electrode 55 is a gold-germanium-nickel ohmic contact electrode.

[0048] Example 2

[0049] As Figure 3 shown, it is the circuit diagram of other embodiments of the all-solid-state high-voltage pulse module switch group. In this embodiment, the semiconductor discharge tube group includes: semiconductor discharge tubes TSS(1),..., semiconductor discharge tubes TSS(n), semiconductor discharge tubes TSS(m),..., semiconductor discharge tubes TSS(m + n); the semiconductor discharge tubes TSS(1),..., semiconductor discharge tubes TSS(n) are connected in series end to end, the semiconductor discharge tubes TSS(m),..., semiconductor discharge tubes TSS(m + n) are connected in series end to end, n semiconductor discharge tubes are connected in series end to end, and then m series structures are connected in parallel to form an n×m TSS matrix. The first ends of the semiconductor discharge tube matrix are respectively connected to the source electrode of the pre-stage switching device MOSFET201, the first end of the static voltage-sharing resistor R5, the first end of the dynamic voltage-sharing resistor R4, and the anode of the dynamic voltage-sharing diode D2; the last ends of the semiconductor discharge tube matrix are respectively connected to the second end of the static voltage-sharing resistor R5, the second end of the dynamic voltage-sharing capacitor C3, and the input end of the pulse compression module 50.

[0050] The number of TSSs in the series-parallel branches of the semiconductor discharge tube group can be adjusted according to actual needs, where both n and m are integers.

[0051] Among them, the pulse compression diode 501 includes: upper electrode 51, p-type epitaxial layer 52, semi-insulating layer 53, lower p-type layer 54, lower electrode 55. The upper electrode 51 is a platinum electrode. The p-type epitaxial layer 52 is a p+GaAs upper epitaxial layer with an epitaxial thickness of 100um and an epitaxial doping concentration of 9×10 20 / cm 3 . The semi-insulating layer 53 is an epitaxial low-temperature semi-insulating gallium arsenide layer. The lower p-type layer 54 is a p+GaAs lower epitaxial layer with an epitaxial thickness of 100um and an epitaxial doping concentration of 9×10 20 / cm 3 . The lower electrode 55 is a platinum electrode.

[0052] The other part structures of the all-solid-state high-voltage pulse module switch group are the same as those in Example 1.

[0053] Example 3

[0054] As Figure 4As shown, it is the circuit diagram of other embodiments of the all-solid-state high-voltage pulse module switch group. In this embodiment, the semiconductor discharge tube group includes semiconductor discharge tubes TSS1, …, semiconductor discharge tube TSSm, semiconductor discharge tube TSS(m + 1), …, semiconductor discharge tube TSS(2m), semiconductor discharge tube TSS(2m + 1), …, semiconductor discharge tube TSS(n + 2m); semiconductor discharge tubes TSS1, …, semiconductor discharge tube TSSm are connected in series end to end, semiconductor discharge tubes TSS(m + 1), …, semiconductor discharge tube TSS(2m) are connected in series end to end, and semiconductor discharge tubes TSS(2m + 1), …, semiconductor discharge tube TSS(n + 2m) are connected in series end to end. The head end of semiconductor discharge tube TSS1 and the head end of semiconductor discharge tube TSS(m + 1) are connected, and the tail end of semiconductor discharge tube TSSm and the tail end of semiconductor discharge tube TSS(2m) are connected to form a parallel branch. The head end of the parallel branch is respectively connected to the source electrode of the previous-stage switching device MOSFET201, the first end of the static voltage-sharing resistor R5, the first end of the dynamic voltage-sharing resistor R4, and the anode of the dynamic voltage-sharing diode D2; the tail end of the parallel branch is connected to the head end of semiconductor discharge tube TSS(2m + 1), and the tail end of semiconductor discharge tube TSS(n + 2m) is respectively connected to the second end of the static voltage-sharing resistor R5, the second end of the dynamic voltage-sharing capacitor C3, and the input end of the pulse compression module 50. The number of TSSs on the series-parallel branches of the semiconductor discharge tube group can be adjusted according to actual needs, where both n and m are integers.

[0055] Among them, the pulse compression diode 501 includes: an upper electrode 51, a p-type epitaxial layer 52, a semi-insulating layer 53, a lower p-type layer 54, and a lower electrode 55. The upper electrode 51 is a platinum electrode. The p-type epitaxial layer 52 is a p+ GaAs upper epitaxial layer, with an epitaxial thickness of 100 um and an epitaxial doping concentration of 9×10 20 / cm 3 . The semi-insulating layer 53 is an epitaxial low-temperature semi-insulating gallium arsenide layer. The lower p-type layer 54 is a p+ GaAs lower epitaxial layer, with an epitaxial thickness of 100 um and an epitaxial doping concentration of 9×10 20 / cm 3 . The lower layer electrode 55 is a platinum electrode.

[0056] The structures of other parts of the all-solid-state high-voltage pulse module switch group are the same as those in Embodiment 1.

Claims

1. All-solid-state high-voltage pulse module switch group, characterized in that, Including: A DC voltage source module (10), a pre-stage switching module (20), a driving module (30), a voltage boosting module (40), a pulse compression module (50), and a load module (60); The driving module (30) is a driver; the load module (60) is a load resistor R L ; The DC voltage source module (10) includes a DC voltage source, a current-limiting resistor R1, and an energy storage capacitor C1; V of the DC voltage source in + terminal is connected to the first terminal of the current-limiting resistor R1, and the V in - terminal of the DC voltage source is respectively connected to the second terminal of the energy storage capacitor C1, the pulse compression module (50), and the first terminal of the load resistor R L ; the second terminal of the current-limiting resistor R1 is respectively connected to the first terminal of the energy storage capacitor C1 and the pre-stage switch module (20); The pre-stage switching module (20) includes a dynamic voltage-sharing resistor R2, a dynamic voltage-sharing diode D1, a dynamic voltage-sharing capacitor C2, a static voltage-sharing resistor R3, and a pre-stage switching device MOSFET (201); The first end of the dynamic voltage-sharing resistor R2, the anode of the dynamic voltage-sharing diode D1, the first end of the static voltage-sharing resistor R3, and the drain of the pre-stage switching device MOSFET (201) are all connected to the second end of the current-limiting resistor R1; The second end of the dynamic voltage-sharing resistor R2 is respectively connected to the cathode of the dynamic voltage-sharing diode D1 and the first end of the dynamic voltage-sharing capacitor C2; The source of the pre-stage switching device MOSFET (201) is respectively connected to the second end of the static voltage-sharing resistor R3, the second end of the dynamic voltage-sharing capacitor C2, and the input end of the voltage boosting module (40); the gate of the pre-stage switching device MOSFET (201) is connected to the output end of the driver; The voltage boosting module (40) includes a semiconductor discharge tube group, a dynamic voltage-sharing resistor R4, a dynamic voltage-sharing diode D2, a dynamic voltage-sharing capacitor C3, and a static voltage-sharing resistor R5; The semiconductor discharge tube group is composed of a plurality of semiconductor discharge tubes connected in series end to end; Or, it is composed of a plurality of series structures connected in parallel, where each series structure is composed of a plurality of semiconductor discharge tubes connected in series end to end; Or, it is composed of a parallel branch and a plurality of semiconductor discharge tubes connected in series end to end, where the parallel branch is composed of a plurality of series structures connected in parallel, and each series structure is composed of a plurality of semiconductor discharge tubes connected in series end to end; The head end of the semiconductor discharge tube group is respectively connected to the source of the pre-stage switching device MOSFET (201), the first end of the static voltage-sharing resistor R5, the first end of the dynamic voltage-sharing resistor R4, and the anode of the dynamic voltage-sharing diode D2; The second end of the dynamic voltage-sharing resistor R4 is respectively connected to the cathode of the dynamic voltage-sharing diode D2 and the first end of the dynamic voltage-sharing capacitor C3; The tail end of the semiconductor discharge tube group is respectively connected to the second end of the static voltage-sharing resistor R5, the second end of the dynamic voltage-sharing capacitor C3, and the input end of the pulse compression module (50); The compression module (50) includes an energy storage capacitor C4, a semiconductor discharge tube TSS0, and a pulse compression diode (501); The first end of the energy storage capacitor C4 is connected to the V end of the DC voltage source. in - The second end of the energy storage capacitor C4 and the first end of the semiconductor discharge tube TSS0 are both connected to the tail end of the semiconductor discharge tube group; the tail end of the semiconductor discharge tube TSS0 is connected to the anode of the pulse compression diode (501), and the cathode of the pulse compression diode (501) is connected to the second end of the load resistor R. L is connected.

2. The all-solid-state high-voltage pulse module switch group according to claim 1, characterized in that, The pulse compression diode (501) includes an upper electrode (51), a p-type epitaxial layer (52), a semi-insulating layer (53), a lower p-type layer (54), and a lower electrode (55) arranged in sequence from top to bottom; the upper electrode (51) is connected to the tail end of the semiconductor discharge tube TSS0, and the lower electrode (55) is connected to the second end of the load resistor R L is connected.

3. The all-solid-state high-voltage pulse module switch group according to claim 2, characterized in that, The upper electrode (51) is a gold-germanium-nickel ohmic contact electrode, or a silver electrode, or a platinum electrode; the p-type epitaxial layer (52) is a p+ GaAs epitaxial layer, with an epitaxial thickness of 2 nm - 100 μm and an epitaxial doping concentration of 1×10 14 / cm 3 -9×10 20 / cm 3 ; the semi-insulating layer (53) is a semi-insulating GaAs layer, or an epitaxial intrinsic gallium arsenide layer, or an epitaxial low-temperature semi-insulating gallium arsenide layer; when the semi-insulating layer (53) is a semi-insulating GaAs layer, its electron mobility is 1000 cm 2 / Vs - 12000 cm 2 / Vs, and its resistivity is 10 6 -10 10 Ω / cm; the lower p-type layer (54) is a p+ GaAs lower epitaxial layer, with an epitaxial thickness of 2 nm - 100 μm and an epitaxial doping concentration of 1×10 14 / cm 3 -9×10 20 / cm 3 ; the lower electrode (55) is a gold-germanium-nickel ohmic contact electrode, or a silver electrode, or a platinum electrode.

Images