Display panel and method for manufacturing the same

Abstract

The present application discloses a display panel and a manufacturing method thereof. The display panel includes: a first substrate and a second substrate, wherein a driving circuit is provided on the first substrate; the second substrate is disposed corresponding to the first substrate, and an LED is provided on a side of the second substrate facing the first substrate, and the driving circuit is configured to drive the LED to emit light. The display panel provided by the present application can solve the problem of abnormal display caused by voltage drop when the power supply passes through the thin film transistor in the driving circuit by separately disposing the driving circuit and the power line on the upper and lower substrates and electrically connecting the two substrates.

Description

Technical Field

[0001] This application relates to the field of display technology, and particularly to a display panel and a manufacturing method thereof. Background Art

[0002] LED (Light Emitting Diode) has been widely used in electronic devices. High-density display devices composed of LEDs have advantages such as high brightness, high contrast, and high resolution, and have become one of the focuses in the display field. In a display driven by an LED and a thin film transistor, the LED is electrically connected to a driving circuit on a substrate to drive the LED chip to emit light through the driving circuit.

[0003] In existing display panels, some structures require metal lines, including thin film transistor electrodes, P electrodes and N electrodes of LEDs, and power supply lines (VDD and VSS) for providing power. Among them, thin film transistor electrodes, P / N electrodes of LEDs can use relatively thin metals with a thickness of less than 1 micron, but power supply lines need to use metals as thick as several microns to dozens of microns as much as possible. Since the structure with a thick metal layer has a small resistance and can pass a large current, such as a power supply line; while the structure with a relatively thin metal layer has a relatively large resistance and is prone to voltage loss causing a voltage drop, such as a thin film transistor electrode.

[0004] In existing display panels, the thin film transistor electrodes, P / N electrodes of LEDs, and power supply lines are integrated on a single substrate. The current output by the power supply line is prone to voltage loss causing a voltage drop problem when passing through the thin film transistor electrode, resulting in abnormal display of the display panel. Summary of the Invention

[0005] Embodiments of this application provide a display panel and a manufacturing method thereof. By separately arranging the driving circuit and the power supply line on upper and lower substrates and electrically connecting the two substrates, the problem of abnormal display caused by voltage drop when the power supply passes through the thin film transistor in the driving circuit can be solved.

[0006] On the one hand, embodiments of this application provide a display panel, which is characterized by including: a first substrate and a second substrate, wherein a driving circuit is arranged on the first substrate; the second substrate is correspondingly arranged with the first substrate, and an LED is arranged on a side of the second substrate facing the first substrate, and the driving circuit is used to drive the LED to emit light.

[0007] Optionally, in some embodiments of this application, the driving circuit includes a thin film transistor, and the thin film transistor includes a gate, a source, and a drain; a first contact electrode and a second contact electrode are arranged on the second substrate, the first contact electrode is electrically connected to the source, and the second contact electrode is electrically connected to the drain.

[0008] Optionally, in some embodiments of the present application, the second substrate further includes a first driving signal line, and the first driving signal line is electrically connected to the second contact electrode.

[0009] Optionally, in some embodiments of the present application, the LED includes a first electrode, and the first electrode is electrically connected to the first contact electrode.

[0010] Optionally, in some embodiments of the present application, the LED further includes a second electrode; the second substrate further includes a second driving signal line, and the second driving signal line is electrically connected to the second electrode.

[0011] Optionally, in some embodiments of the present application, the first electrode and the second electrode are disposed on the same side.

[0012] Optionally, in some embodiments of the present application, the first substrate further includes a third driving signal line, one end of the third driving signal line is electrically connected to the drain electrode, and the other end of the third driving signal line is electrically connected to the first driving signal line.

[0013] Optionally, in some embodiments of the present application, the first substrate further includes a scanning signal line, and the scanning signal line is electrically connected to the gate electrode.

[0014] On the other hand, an embodiment of the present application further provides a method for manufacturing a display panel, including the following steps:

[0015] Manufacture a driving circuit on a first substrate; manufacture an LED on a second substrate, and the driving circuit is used to drive the LED to emit light; align the first substrate with the second substrate to form a display panel.

[0016] Optionally, in some embodiments of the present application, the steps of manufacturing a driving circuit on the first substrate; manufacturing an LED on the second substrate; and aligning the first substrate with the second substrate specifically include: manufacturing a thin-film transistor on the first substrate, the thin-film transistor including a source electrode, a drain electrode, and a gate electrode; manufacturing a first contact electrode, a second contact electrode, a first driving signal line, and a second driving signal line on the second substrate, and the LED includes a first electrode and a second electrode; wherein, the source electrode is electrically connected to the first contact electrode, the drain electrode is electrically connected to the second contact electrode, the first driving signal line is electrically connected to the drain electrode, the source electrode is electrically connected to the first electrode, and the second electrode is electrically connected to the second driving signal line to form a display panel.

[0017] An embodiment of the present application provides a display panel and a manufacturing method thereof. The display panel includes: a first substrate and a second substrate. A driving circuit is provided on the first substrate. The second substrate is disposed corresponding to the first substrate, and an LED is provided on a side of the second substrate facing the first substrate. The driving circuit is configured to drive the LED to emit light. In the display panel provided by the present application, by separately disposing the driving circuit and the power supply line on the upper and lower substrates and electrically connecting the two substrates, the problem of abnormal display caused by voltage drop when the power supply passes through the thin film transistor in the driving circuit can be solved. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. The drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0019] Figure 1 It is a schematic structural diagram of the first display panel provided by the embodiment of the present application;

[0020] Figure 2 It is a schematic structural diagram of the second display panel provided by the embodiment of the present application;

[0021] Figure 3 It is a schematic manufacturing process diagram of the display panel provided by the embodiment of the present application.

[0022] Among them:

[0023] 100 / 200, display panel, 10, first substrate, 20, driving circuit / thin film transistor, 21, source electrode, 22, gate insulating layer, 23, active layer, 24, drain electrode, 25, gate electrode, 30, second substrate, 31, first contact electrode, 32, second contact electrode, 33, buffer layer, 34, interlayer dielectric layer, 40, LED, 41, first electrode, 42, second electrode, 50, first driving signal line, 60, second driving signal line, 70, third driving signal line, 71, first sub-driving signal line, 72, second sub-driving signal line. Detailed Embodiments

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0025] An embodiment of the present application provides a display panel and a manufacturing method thereof. By separately disposing thin-film transistors and power supply lines on two upper and lower substrates and electrically connecting the two substrates, it is possible to solve the problem of abnormal display caused by voltage drop when power supply passes through the thin-film transistors. It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. Additionally, in the description of the present application, the term "including" means "including but not limited to". Terms such as "first", "second", "third", etc. are merely used as labels for distinguishing different objects and are not used to describe a specific order.

[0026] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of the first display panel provided by an embodiment of the present application; as Figure 1 shown, an embodiment of the present application provides a display panel 100, and the display panel 100 includes: a first substrate 10 and a second substrate 30. A driving circuit 20 is disposed on the first substrate 10; the second substrate 30 is disposed corresponding to the first substrate 10, and an LED 40 is disposed on a side of the second substrate 30 facing the first substrate 10. The driving circuit 20 is used to drive the LED 40 to emit light.

[0027] In the embodiment of the present application, preferably, the LED 40 is a Micro LED. Specifically, the Micro LED chip has characteristics such as small size, high integration, and self-luminescence, and has greater advantages than traditional display technologies in terms of brightness, resolution, contrast, energy consumption, service life, response speed, and thermal stability.

[0028] Compared with the prior art in which thin-film transistor electrodes and power supply lines (VDD and VSS) for providing power are integrated on one substrate, among which, the thin-film transistor electrodes need to use relatively thin metal, but the power supply lines need to use as thick metal as possible. Since the metal layer of the power supply line is thick, its resistance is small and the current that can pass through is large, while the thin-film transistor electrodes with a relatively thin metal layer have a relatively large resistance. When the current output by the power supply line passes through the thin-film transistor electrodes, it is easy to cause voltage loss and voltage drop problems, resulting in abnormal display of the display panel.

[0029] The display panel 100 provided by the present application can solve the problem of abnormal display caused by voltage drop when power supply passes through the thin-film transistors in the driving circuit by separately disposing the driving circuit 20 and the power supply lines on two upper and lower substrates and electrically connecting the two substrates.

[0030] In the embodiment of the present application, the driving circuit 20 includes a thin-film transistor 20, and the thin-film transistor 20 includes a gate 25, a source 21, and a drain 24.

[0031] In an embodiment of the present application, a gate electrode 25, a gate insulating layer 22, an active layer 23, a source electrode 21, and a drain electrode 24 are stacked on one side of the first substrate 10 facing the second substrate 30. The first substrate 10 further includes scan signal lines (not shown in the figure), wherein the scan signal lines are electrically connected to the gate electrode 25. The thin-film transistor 20 in the embodiment of the present application may be a top-gate oxide thin-film transistor 20 or a top-gate low-temperature polycrystalline silicon thin-film transistor 20 fabricated using top-gate low-temperature polycrystalline silicon technology. The present application does not make any limitation herein.

[0032] In an embodiment of the present application, a first contact electrode 31 and a second contact electrode 32 are provided on the second substrate 30. The first contact electrode 31 is electrically connected to the source electrode 21, and the second contact electrode 32 is electrically connected to the drain electrode 24. Among them, both the first contact electrode 31 and the second contact electrode 32 are made of a conductive material, which may be the same as the materials of the source electrode 21 and the drain electrode 24. The thickness range of the first contact electrode 31 and the second contact electrode 32 is from several micrometers to dozens of micrometers, which can be set by those skilled in the art according to actual needs. The present application does not make any limitation herein.

[0033] In an embodiment of the present application, a buffer layer 33 is further provided on the second substrate 30, and the first contact electrode 31 and the second contact electrode 32 are provided on the buffer layer 33. Specifically, the first substrate 10 and the second substrate 30 may be a glass substrate or a flexible substrate prepared using a polymer. The polymer may be polyimide (PI). The buffer layer 33 may be a silicon oxide (SiO x ) layer or a silicon nitride (SiN x ) layer, or a composite layer composed of a stack of a silicon oxide layer and a silicon nitride layer.

[0034] In an embodiment of the present application, the second substrate 30 further includes a first driving signal line 50, and the first driving signal line 50 is electrically connected to the second contact electrode 32. Preferably, the first driving signal line 50 is used to provide a voltage driving signal (VDD). Specifically, the first driving signal line 50 is provided on the buffer layer 33, and the first driving signal line 50 is electrically connected to the second contact electrode 32 through a via hole (not shown in the figure) and provides a voltage driving signal (VDD) to the drain electrode 24 of the thin-film transistor 20. Further, as Figure 1 shown, the second substrate 30 further includes an interlayer dielectric layer 34, and a part of the first driving signal line 50 is located in the interlayer dielectric layer 34 and is electrically connected to the second contact electrode 32 through a via hole provided on the buffer layer 33.

[0035] In an embodiment of the present application, an LED 40 is provided on the buffer layer 33 of the second substrate 30. The LED 40 includes a first electrode 41, and the first electrode 41 is electrically connected to the first contact electrode 31.

[0036] In the embodiment of the present application, the LED 40 further includes a second electrode 42, and the first electrode 41 and the second electrode 42 are insulated from each other. The second substrate 30 further includes a second drive signal line 60, and the second drive signal line 60 is electrically connected to the second electrode 42. Preferably, the second drive signal line 60 is used to provide a power switch signal (VSS) to the second electrode 42 of the LED 40. The specific type of the first electrode 41 is not limited in the embodiment of the present application. The first electrode 41 can be an N electrode, that is, a cathode, and correspondingly, the second electrode 42 is a P electrode, that is, an anode; in addition, the first electrode 41 can also be a P electrode, that is, an anode, and correspondingly, the second electrode 42 is an N electrode, that is, a cathode. Preferably, Figure 1 In the figure, the first electrode 41 is shown as a P electrode and the second electrode 42 is shown as an N electrode.

[0037] In the embodiment of the present application, LED 40 may be a transparent LED 40, that is, each layer structure of LED 40 is formed of a transparent material. For example, the N-type semiconductor layer or the P-type semiconductor layer may be made of transparent materials such as gallium nitride and gallium arsenide. The first electrode 41 and the second electrode 42 may also be formed of a transparent material. In this embodiment, the specific material of the transparent material forming the first electrode 41 and the second electrode 42 is not limited, and may be a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc., or may be a transparent ultra-thin metal material, such as silver nanowires (each having a thickness of less than 100 nanometers), etc.

[0038] In the embodiment of the present application, the first electrode 41 and the second electrode 42 are arranged on the same side, and the first electrode 41 and the second electrode 42 are both arranged on the buffer layer 33. The LED 40 of the same-side electrode structure includes a first-type semiconductor layer (not shown in the figure), an active layer (not shown in the figure) and a second-type semiconductor layer (not shown in the figure) arranged in a stacked manner, as well as a first electrode 41 and a second electrode 42; the first electrode 41 and the second electrode 42 are located on the same side of the LED semiconductor structure, and the LED 40 structure includes the LED semiconductor structure, and the first electrode 41 and the second electrode 42 located on the same side of the LED semiconductor structure; it should be noted that during the manufacturing process of the first electrode 41 and the second electrode 42, the first electrode 41 is located on the surface of the first-type semiconductor layer away from the active layer, and then the first-type semiconductor layer and the active layer are etched to expose part of the second-type semiconductor layer, and then the second electrode 42 is manufactured on the surface of the second-type semiconductor layer facing the active layer, and finally the same-side electrode LED structure is formed.

[0039] The display panel provided by the present application sets the thin-film transistor 20 on the first substrate 10, sets the power line and the LED 40 on the second substrate 30, and electrically connects the source electrode 21 and the drain electrode 24 of the thin-film transistor 20 to the corresponding first contact electrode 31 and second contact electrode 32 on the second substrate 30, so as to separately set the power line and the thin signal line of other metal lines to improve the stability of the display signal, and can solve the problem of abnormal display caused by voltage drop when the power supply passes through the thin-film transistor 20.

[0040] As a specific embodiment of the present application, please refer to Figure 2 , Figure 2 FIG. is a schematic structural diagram of the second display panel provided by the embodiment of the present application; as Figure 2 shown, the difference between the display panel 200 and the display panel 100 is that in the display panel 200, the first substrate 10 further includes a third driving signal line 70, one end of the third driving signal line 70 is electrically connected to the drain electrode 24, and the other end of the third driving signal line 70 is electrically connected to the first driving signal line 50.

[0041] In the embodiment of the present application, the third driving signal line 70 includes a first sub-driving signal line 71 and a second sub-driving signal line 72. The first sub-driving signal line 71 is disposed on the side of the first substrate 10 facing the second substrate 30, the second sub-driving signal line 72 is disposed between the first substrate 10 and the second substrate 30, one end of the first sub-driving signal line 71 is electrically connected to the drain electrode 24 of the thin-film transistor 20, the other end of the first sub-driving signal line 71 is electrically connected to one end of the second sub-driving signal line 72, and the other end of the second sub-driving signal line 72 is electrically connected to the first driving signal line 50.

[0042] As a specific embodiment of the present application, the third driving signal line 70 is disposed on the side of the first substrate 10 facing the second substrate 30, and the display panel 200 further includes a conductive structure (not shown in the figure), and the third driving signal line 70 is electrically connected to the first driving signal line 50 through the conductive structure. Specifically, the conductive structure can be a longitudinally conductive structure, that is, the conductive structure is conductive in the direction perpendicular to the first substrate 10. Optionally, the conductive structure includes a conductive metal ball and the like. Those skilled in the art can set it according to actual needs, and the embodiment of the present application does not limit this.

[0043] In the embodiment of the present application, the display panel 200 further includes a first substrate 10 and a second substrate 30. A driving circuit 20 is disposed on the first substrate 10; the second substrate 30 is disposed corresponding to the first substrate 10, and an LED 40 is disposed on the side of the second substrate 30 facing the first substrate 10, and the driving circuit 20 is used to drive the LED 40 to emit light.

[0044] In an embodiment of the present application, the driving circuit 20 includes a thin-film transistor 20, and the thin-film transistor 20 includes a gate 25, a source 21, and a drain 24. Specifically, on the side of the first substrate 10 facing the second substrate 30, a gate 25, a gate insulating layer 22, an active layer 23, a source 21, and a drain 24 are stacked. The first substrate 10 further includes scan signal lines (not shown in the figure), wherein the scan signal lines are electrically connected to the gate 25. The thin-film transistor 20 in the embodiment of the present application may be a top-gate oxide thin-film transistor 20, or a top-gate low-temperature polysilicon thin-film transistor 20 made by using top-gate low-temperature polysilicon technology. The present application does not make any limitation herein.

[0045] In an embodiment of the present application, a first contact electrode 31 and a second contact electrode 32 are provided on the second substrate 30. The first contact electrode 31 is electrically connected to the source 21, and the second contact electrode 32 is electrically connected to the drain 24. Among them, both the first contact electrode 31 and the second contact electrode 32 are made of a conductive material, and may be the same as the materials of the source 21 and the drain 24. The thickness range of the first contact electrode 31 and the second contact electrode 32 is from several micrometers to dozens of micrometers, which can be set by those skilled in the art according to actual needs. The present application does not make any limitation herein.

[0046] In an embodiment of the present application, a buffer layer 33 is further provided on the second substrate 30, and the first contact electrode 31 and the second contact electrode 32 are provided on the buffer layer 33. Specifically, the first substrate 10 and the second substrate 30 may be glass substrates or flexible substrates prepared by using a polymer. The polymer may be polyimide (PI). The buffer layer 33 may be a silicon oxide (SiO x ) layer or a silicon nitride (SiN x ) layer, or a composite layer formed by stacking a silicon oxide layer and a silicon nitride layer.

[0047] In an embodiment of the present application, the second substrate 30 further includes a first driving signal line 50, and the first driving signal line 50 is electrically connected to the second contact electrode 32. Preferably, the first driving signal line 50 is used to provide a voltage driving signal (VDD). Specifically, the first driving signal line 50 provides a voltage driving signal (VDD) to the drain 24 of the thin-film transistor 20 through a third driving signal line 70. Further, as Figure 2 shown, the second substrate 30 further includes an interlayer dielectric layer 34. Part of the first driving signal line 50 is located in the interlayer dielectric layer 34, and electrically connects the source 21 of the thin-film transistor 20 and the source 21 of the LED 40 through a via provided on the buffer layer 33.

[0048] In an embodiment of the present application, an LED 40 is provided on the buffer layer 33 of the second substrate 30. The LED 40 includes a first electrode 41, and the first electrode 41 is electrically connected to the first contact electrode 31.

[0049] In the embodiment of the present application, the LED 40 further includes a second electrode 42, and the first electrode 41 and the second electrode 42 are insulated from each other. The second substrate 30 further includes a second drive signal line 60, and the second drive signal line 60 is electrically connected to the second electrode 42. Preferably, the second drive signal line 60 is used to provide a power switch signal (VSS) to the second electrode 42 of the LED 40. The specific type of the first electrode 41 is not limited in the embodiment of the present application. The first electrode 41 can be an N electrode, that is, a cathode, and correspondingly, the second electrode 42 is a P electrode, that is, an anode; in addition, the first electrode 41 can also be a P electrode, that is, an anode, and correspondingly, the second electrode 42 is an N electrode, that is, a cathode. Preferably, Figure 2 In the figure, the first electrode 41 is shown as a P electrode and the second electrode 42 is shown as an N electrode.

[0050] In the embodiment of the present application, LED 40 may be a transparent LED 40, that is, each layer structure of LED 40 is formed of a transparent material. For example, the N-type semiconductor layer or the P-type semiconductor layer may be made of transparent materials such as gallium nitride and gallium arsenide. The first electrode 41 and the second electrode 42 may also be formed of a transparent material. In this embodiment, the specific material of the transparent material forming the first electrode 41 and the second electrode 42 is not limited, and may be a transparent conductive material, such as ITO (indium tin oxide), IZO (indium zinc oxide), etc., or may be a transparent ultra-thin metal material, such as silver nanowires (each having a thickness of less than 100 nanometers), etc.

[0051] In the embodiment of the present application, the first electrode 41 and the second electrode 42 are arranged on the same side, and the first electrode 41 and the second electrode 42 are both arranged on the buffer layer 33. The LED 40 of the same-side electrode structure includes a first-type semiconductor layer (not shown in the figure), an active layer (not shown in the figure) and a second-type semiconductor layer (not shown in the figure) arranged in a stacked manner, as well as a first electrode 41 and a second electrode 42; the first electrode 41 and the second electrode 42 are located on the same side of the LED semiconductor structure, and the LED 40 structure includes the LED semiconductor structure, and the first electrode 41 and the second electrode 42 located on the same side of the LED semiconductor structure; it should be noted that during the manufacturing process of the first electrode 41 and the second electrode 42, the first electrode 41 is located on the surface of the first-type semiconductor layer away from the active layer, and then the first-type semiconductor layer and the active layer are etched to expose part of the second-type semiconductor layer, and then the second electrode 42 is manufactured on the surface of the second-type semiconductor layer facing the active layer, and finally the same-side electrode LED structure is formed.

[0052] The display panel provided by the present application sets the thin-film transistor 20 on the first substrate 10, sets the power supply line and the LED 40 on the second substrate 30, and realizes the separate setting of the power supply line and the thin signal line of other metal lines by electrically connecting the source electrode 21 and the drain electrode 24 of the thin-film transistor 20 to the corresponding first contact electrode 31 and the second contact electrode 32 on the second substrate 30, so as to improve the stability of the display signal, and can solve the problem of abnormal display caused by voltage drop when the power supply passes through the thin-film transistor 20.

[0053] On the other hand, please refer to Figure 3 , Figure 3 which is a schematic diagram of the manufacturing process of the display panel provided by the embodiment of the present application. As Figure 3 shown, the embodiment of the present application also provides a method for manufacturing a display panel, including the following steps:

[0054] S10. Fabricate the driving circuit 20 on the first substrate 10.

[0055] In the embodiment of the present application, the driving circuit 20 is fabricated on the first substrate 10 by using a conventional process. Among them, the driving circuit 20 includes a thin-film transistor 20, and the thin-film transistor 20 includes a gate electrode 25, a source electrode 21, and a drain electrode 24. Specifically, the gate electrode 25, the gate insulating layer 22, the active layer 23, the source electrode 21, and the drain electrode 24 are sequentially fabricated on the side of the first substrate 10 facing the second substrate 30. The first substrate 10 also includes a scan signal line and a data signal line, the scan signal line is electrically connected to the gate electrode 25, and the data signal line is electrically connected to the source electrode 21. The thin-film transistor 20 in the embodiment of the present application can be a top-gate oxide thin-film transistor 20 or a top-gate low-temperature polysilicon thin-film transistor 20 fabricated by using the top-gate low-temperature polysilicon technology, and the present application does not make any limitation here.

[0056] S20. Fabricate the LED 40 on the second substrate 30.

[0057] In the embodiment of the present application, the electrodes of the LED 40 and the first driving signal line 50 (VDD) and the second driving signal line 60 (VSS) for providing the power supply voltage are fabricated on the second substrate 30 by using electroplating or evaporation. Among them, the LED 40 includes a first electrode 41 and a second electrode 42 arranged opposite to each other, and the first electrode 41 is electrically connected to the first contact electrode 31. The specific type of the first electrode 41 is not limited in the embodiment of the present application. The first electrode 41 can be an N electrode, that is, a cathode, and correspondingly, the second electrode 42 is a P electrode, that is, an anode; in addition, the first electrode 41 can also be a P electrode, that is, an anode, and correspondingly, the second electrode 42 is an N electrode, that is, a cathode. Preferably, in the embodiment of the present application, the first electrode 41 is a P electrode and the second electrode 42 is an N electrode for illustration.

[0058] In the embodiment of the present application, the first electrode 41 and the second electrode 42 are arranged on the same side. The LED 40 of the same-side electrode structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked, and a first electrode 41 and a second electrode 42; the first electrode 41 and the second electrode 42 are located on the same side of the LED semiconductor structure, and the LED 40 structure includes the LED semiconductor structure, and the first electrode 41 and the second electrode 42 located on the same side of the LED semiconductor structure; it should be noted that during the manufacturing process of the first electrode 41 and the second electrode 42, the first electrode 41 is located on the surface of the first-type semiconductor layer away from the active layer, and then the first-type semiconductor layer and the active layer are etched to expose part of the second-type semiconductor layer, and then the second electrode 42 is manufactured on the surface of the second-type semiconductor layer facing the active layer, and finally the same-side electrode LED structure is formed.

[0059] Furthermore, a first contact electrode 31 and a second contact electrode 32 are made on the second substrate 30. The first contact electrode 31 and the second contact electrode 32 are both made of conductive materials, which can be the same as the material of the source electrode 21 and the drain electrode 24. Furthermore, a buffer layer 33 is also provided on the second substrate 30, and the first contact electrode 31 and the second contact electrode 32 are provided on the buffer layer 33. Specifically, the first substrate 10 and the second substrate 30 can be glass substrates or flexible substrates made of polymers, and the polymer can be polyimide (PI). The buffer layer 33 can be silicon oxide (SiO x ) layer or silicon nitride (SiN x ) layer, or a composite layer composed of a silicon oxide layer and a silicon nitride layer stacked together.

[0060] Further, a first drive signal line 50 is fabricated on the second substrate 30, and the first drive signal line 50 is electrically connected to the second contact electrode 32. Preferably, the first drive signal line 50 is used to provide a voltage drive signal (VDD). Specifically, the first drive signal line 50 provides a voltage drive signal (VDD) to the drain 24 of the thin film transistor 20 through the second contact electrode 32.

[0061] Furthermore, a second driving signal line 60 is fabricated on the second substrate 30 , and the second driving signal line 60 is electrically connected to the second electrode 42 . Preferably, the second driving signal line 60 is used to provide a power switch signal (VSS) to the second electrode 42 of the LED 40 .

[0062] S30 , aligning the first substrate 10 and the second substrate 30 to form a display panel.

[0063] In an embodiment of the present application, a first contact electrode 31 and a second contact electrode 32 on the second substrate 30 are electrically connected to a source electrode 21 and a drain electrode 24 on the first substrate 10 respectively to complete the fabrication of the display panel. Among them, both the first contact electrode 31 and the second contact electrode 32 are made of a conductive material, which may be the same as the materials of the source electrode 21 and the drain electrode 24.

[0064] An embodiment of the present application provides a display panel and a manufacturing method thereof. The display panel includes: a first substrate 10 and a second substrate 30. A driving circuit 20 is disposed on the first substrate 10; the second substrate 30 is disposed corresponding to the first substrate 10, and an LED 40 is disposed on a side of the second substrate 30 facing the first substrate 10. The driving circuit 20 is configured to drive the LED 40 to emit light. By disposing the thin film transistor 20 on the first substrate 10 and the power supply line and the LED 40 on the second substrate 30 in the display panel provided by the present application, and electrically connecting the source electrode 21 and the drain electrode 24 of the thin film transistor 20 to corresponding first contact electrode 31 and second contact electrode 32 on the second substrate 30, the power supply line and the thin signal lines of other metal lines are separately disposed to improve the stability of the display signal, and the problem of abnormal display caused by voltage drop when the power supply passes through the thin film transistor 20 can be solved.

[0065] The above has introduced in detail a display panel and a manufacturing method thereof provided by an embodiment of the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A display panel, characterized in that, Comprising: A first substrate, on which a driving circuit is provided; A second substrate, which is disposed corresponding to the first substrate, and an LED is provided on a side of the second substrate facing the first substrate, and the driving circuit is configured to drive the LED to emit light; The driving circuit includes a thin-film transistor, and the thin-film transistor includes a gate, a source, and a drain; A first contact electrode and a second contact electrode are provided on the second substrate, the first contact electrode is electrically connected to the source, and the second contact electrode is electrically connected to the drain; The second substrate further includes a first driving signal line, and the first driving signal line is electrically connected to the second contact electrode.

2. The display panel according to claim 1, wherein The LED includes a first electrode, and the first electrode is electrically connected to the first contact electrode.

3. The display panel according to claim 2, wherein The LED further includes a second electrode; the second substrate further includes a second driving signal line, and the second driving signal line is electrically connected to the second electrode.

4. The display panel according to claim 3, wherein The first electrode and the second electrode are disposed on the same side.

5. The display panel according to claim 1, characterized in that The first substrate further includes a third driving signal line, one end of the third driving signal line is electrically connected to the drain, and the other end of the third driving signal line is electrically connected to the first driving signal line.

6. The display panel according to claim 1, wherein The first substrate further includes a scanning signal line, and the scanning signal line is electrically connected to the gate.

7. A manufacturing method of a display panel, characterized in that, Including the following steps: Fabricating a driving circuit on the first substrate; Fabricating an LED on the second substrate, and the driving circuit is configured to drive the LED to emit light; Aligning the first substrate with the second substrate to form a display panel; The step of fabricating a driving circuit on the first substrate; Fabricating an LED on the second substrate; The step of aligning the first substrate with the second substrate includes: Fabricating a thin-film transistor on the first substrate, and the thin-film transistor includes a source, a drain, and a gate; Fabricating a first contact electrode, a second contact electrode, a first driving signal line, and a second driving signal line on the second substrate, and the LED includes a first electrode and a second electrode; wherein, The source is electrically connected to the first contact electrode, the drain is electrically connected to the second contact electrode, the first driving signal line is electrically connected to the drain, the source is electrically connected to the first electrode, and the second electrode is electrically connected to the second driving signal line to form a display panel.

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