Pixel array substrate

Abstract

A pixel array substrate comprises a substrate, an active component layer, a first retaining wall structure, a plurality of second retaining wall structures and a plurality of organic light-emitting layers. The first retaining wall structure comprises a plurality of first extensions and a plurality of second extensions. The plurality of first extensions extend along a first direction. Each second extension is located between two adjacent first extensions in the second direction. The thickness of the first extension is greater than that of the second extension. Each second extension has a plurality of grooves. The second retaining wall structure extends along the first direction and is located on the first extension.

Description

Technical Field

[0001] The present invention relates to a pixel array substrate, and in particular to a pixel array substrate comprising an organic light emitting layer. Background Art

[0002] Organic light-emitting diodes are electroluminescent semiconductor elements with the advantages of high efficiency, long life, resistance to damage, fast response speed, and high reliability. At present, common methods for depositing organic light-emitting materials include evaporation, inkjet and other technologies. However, in high-resolution display devices, the distance between sub-pixels of different colors is very small, which makes it easy for organic light-emitting materials of different colors to stack on each other, causing color mixing problems. Therefore, there is an urgent need for a method that can solve the above problems. Summary of the invention

[0003] The present invention provides a pixel array substrate, which can reduce the problem of color deviation caused by uneven distribution of an organic light-emitting layer.

[0004] The present invention provides a method for manufacturing a pixel array substrate, which can improve the process yield of forming an organic light-emitting layer, thereby avoiding the problem of color deviation.

[0005] At least one embodiment of the present invention provides a pixel array substrate. The pixel array substrate includes a substrate, an active device layer, a first retaining wall structure, a plurality of second retaining wall structures, and a plurality of organic light-emitting layers. The active device layer is located on the substrate. The first retaining wall structure is located on the active device layer and has a plurality of first openings. The first retaining wall structure includes a plurality of first extensions and a plurality of second extensions. The plurality of first extensions extend along a first direction. Each second extension is located between two adjacent first extensions in a second direction. Each first opening is surrounded by two corresponding first extensions and two corresponding second extensions. The thickness of the first extension is greater than the thickness of the second extension. Each second extension has a plurality of grooves. The second retaining wall structure extends along the first direction and is located on the first extension. The vertical projection of each second extension on the substrate is located between the vertical projections of two adjacent second retaining wall structures on the substrate in the second direction. The plurality of organic light-emitting layers are located in the first opening and on the second extensions.

[0006] At least one embodiment of the present invention provides a method for manufacturing a pixel array substrate, comprising: providing a substrate and an active component layer located on the substrate; forming a first retaining wall structure on the active component layer, wherein the first retaining wall structure has a plurality of first openings; the first retaining wall structure includes a plurality of first extension portions and a plurality of second extension portions, the first extension portions extend along a first direction, and each second extension portion is located between two adjacent first extension portions in a second direction, wherein each first opening is surrounded by two corresponding first extension portions and two corresponding second extension portions, wherein the thickness of the first extension portion is greater than the thickness of the second extension portion; forming a plurality of second retaining wall structures on the first extension portions; and forming a plurality of organic light-emitting layers in the first openings and on the second extension portions. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A The figure is a top view of a pixel array substrate according to an embodiment of the present invention.

[0008] Figure 1B It is along Figure 1A Schematic cross-sectional view of line a-a'.

[0009] Figure 1C It is along Figure 1A Schematic cross-sectional view of line b-b'.

[0010] Figure 1D It is along Figure 1A Schematic cross-sectional view of line c-c'.

[0011] Figure 1E It is along Figure 1A A schematic cross-sectional view of line d-d'.

[0012] FIG. 2A to FIG. 2F The figure is a top view of a method for manufacturing a pixel array substrate according to an embodiment of the present invention.

[0013] Figure 3 It is a partial top view of a first mask according to an embodiment of the present invention.

[0014] Figure 4 It is a partial top view of a first mask according to an embodiment of the present invention.

[0015] Figure 5 It is a partial top view of a first mask according to an embodiment of the present invention.

[0016] Fig. 6A It is a partial top view of a pixel array substrate according to an embodiment of the present invention.

[0017] Figure 6B It is along Fig. 6A Schematic cross-sectional view of line e-e'.

[0018] Fig. 7A It is a partial top view of a pixel array substrate according to an embodiment of the present invention.

[0019] Figure 7B It is along Fig. 7A Schematic cross-sectional view of line f-f'.

[0020] FIG. 8A to FIG. 11A It is a top view of a method for manufacturing a first retaining wall structure according to an embodiment of the present invention.

[0021] FIG. 8B to FIG. 11B Along the FIG. 8A to FIG. 11A Schematic cross-sectional view of line c-c'.

[0022] Fig. 9C is a top view of a first mask according to an embodiment of the present invention.

[0023] Fig. 11C is a top view of a second mask according to an embodiment of the present invention.

[0024] Description of reference numerals:

[0025] 10,10a,10b: Pixel array substrate

[0026] 100: Base

[0027] 110: Active component layer

[0028] 120': first photoresist material layer

[0029] 120: First retaining wall structure

[0030] 122: First extension

[0031] 122M: Second mask

[0032] 122S,124S,126S,130S,P3S: Side

[0033] 122T,124T: Top surface

[0034] 124: Second extension

[0035] 124M,M1,M1a,M1b: First mask

[0036] 126: Outer frame

[0037] 130: Second retaining wall structure

[0038] 130B: Bottom surface

[0039] 140: Organic light emitting layer

[0040] 142: First organic light emitting layer

[0041] 144: Second organic light emitting layer

[0042] 146: Third organic light emitting layer

[0043] CH: Channel layer

[0044] D: Drain

[0045] D1: First direction

[0046] D2: Second direction

[0047] DL: Signal line

[0048] E1: First electrode

[0049] E2: Second electrode

[0050] G: Gate

[0051] GI: Gate Insulator

[0052] GV, GVa: Groove

[0053] I1, I2: Dielectric layer

[0054] L, L1a: Light-shielding structure

[0055] O1: First opening

[0056] O2: Second opening

[0057] P1, P1a, P1b: First light-transmitting part

[0058] P2, P2a, P2b: Second light-transmitting part

[0059] P3, P3a, P3b: Light shielding

[0060] R1, R2: Area

[0061] S: Source

[0062] ST, STa: gap

[0063] T: Active components

[0064] t1, t2, t3: thickness

[0065] td1,td2: height difference

[0066] LW, SW, W1, W2: Width

[0067] X1, X2: extension direction DETAILED DESCRIPTION

[0068] Figure 1A The figure is a top view of a pixel array substrate according to an embodiment of the present invention. Figure 1B It is along Figure 1A Schematic cross-sectional view of line a-a'. Figure 1C It is along Figure 1A Schematic cross-sectional view of line b-b'. Figure 1D It is along Figure 1A Schematic cross-sectional view of line c-c'. Figure 1E It is along Figure 1A A schematic cross-sectional view of line d-d'.

[0069] Please refer to Figures 1A to 1E The pixel array substrate 10 includes a substrate 100 , an active device layer 110 , a first retaining wall structure 120 , a plurality of second retaining wall structures 130 and a plurality of organic light emitting layers 140 .

[0070] Please refer to Figure 1A and Figure 1B The material of the substrate 100 can be glass, quartz, organic polymer, or opaque / reflective material (e.g., conductive material, metal, wafer, ceramic or other applicable material) or other applicable materials. If a conductive material or metal is used, an insulating layer (not shown) is covered on the substrate 100 to avoid short circuit problems.

[0071] The active device layer 110 is located on the substrate 100. The active device layer 110 includes a plurality of active devices T. The active device T includes a gate G, a source S, a drain D, and a channel layer CH. The channel layer CH is located on the substrate 100 and overlaps the gate G. The gate insulating layer GI is located between the channel layer CH and the gate G. The dielectric layer I1 is located on the gate G and the gate insulating layer GI. The source S and the drain D are located on the dielectric layer I1 and are electrically connected to the channel layer CH. The dielectric layer I2 is located on the dielectric layer I1.

[0072] In some embodiments, the gate G, the source S, and the drain D are each a single-layer or multi-layer structure, and the material includes metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, the above alloys, the above metal oxides, the above metal nitrides, or the above combinations or other conductive materials. In some embodiments, the channel layer CH is a single-layer or multi-layer structure, and the material includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium zinc oxide or other suitable materials, or the above combinations) or other suitable materials or the above combinations.

[0073] In this embodiment, the active device T is a top-gate thin film transistor, but the present invention is not limited thereto. In other embodiments, the active device T may also be a bottom-gate thin film transistor, a dual-gate thin film transistor or other types of thin film transistors.

[0074] A plurality of first electrodes E1 are located on the dielectric layer I2 and are electrically connected to the drain D of the active device T. As shown in FIG.

[0075] Please refer to Figures 1A to 1E , the first retaining wall structure 120 is located on the active device layer 110, and has a plurality of first openings O1 and a plurality of second openings O2. In the present embodiment, the first retaining wall structure 120 includes a plurality of first extensions 122 and a plurality of second extensions 124, and the first retaining wall structure 120 selectively includes an outer frame portion 126. The first extension portion 122, the second extension portion 124 and the outer frame portion 126 are integrally formed. The first extension portion 122 extends along the first direction D1. Each second extension portion 124 is located between two adjacent first extension portions 122 in the second direction D2, and the two sides of each second extension portion 124 are connected to the two adjacent first extension portions 122. The outer frame portion 126 connects the two sides of the second extension portion 124. The second direction D2 is, for example, perpendicular to the first direction D1.

[0076] In this embodiment, the top surface of the second extension portion 124 is a flat surface, but the present invention is not limited thereto. In some embodiments, the top surface of the second extension portion 124 is wavy or the second extension portion 124 has a plurality of grooves (such as Figure 6B and Figure 7B shown).

[0077] In this embodiment, part of the first opening O1 is surrounded by the corresponding two first extensions 122 and the corresponding two second extensions 124, and another part of the first opening O1 is surrounded by the corresponding two first extensions 122, a corresponding second extension 124, and the outer frame 126. In other words, two sidewalls of the first opening O1 are the side surfaces 122S of the first extension 122, another sidewall is the side surface 124S of the second extension 124, and another sidewall is the side surface 124S of the second extension 124 or the side surface 126S of the outer frame 126. The first electrode E1 is located at the bottom of the first opening O1.

[0078] In this embodiment, the thickness t1 of the first extension portion 122 is greater than the thickness t2 of the second extension portion 124. For example, the thickness t1 is 0.9 micrometers to 1.3 micrometers, and the thickness t2 is 0.3 micrometers to 0.8 micrometers. In some embodiments, the outer frame portion 126 and the first extension portion 122 have the same thickness t1. In some embodiments, the height difference td1 between the top surface 124T of the second extension portion 124 and the top surface of the first electrode E1 (please refer to Figure 1B ) is 0.05 micrometers to 0.2 micrometers. In some embodiments, the height difference td2 between the top surface 122T of the first extension portion 122 and the top surface 124T of the second extension portion 124 (please refer to Figure 1D ) is 1 micron to 0.1 micron. In this embodiment, the thickness t1 of the first extension portion 122 is greater than the height difference td2 between the top surface 122T of the first extension portion 122 and the top surface 124T of the second extension portion 124, and the height difference td2 is greater than 0.1 micron.

[0079] The second opening O2 is located above the second extension portion 124. In this embodiment, the two opposite side walls of the second opening O2 are the side surfaces 122S of the two adjacent first extension portions 122, and the bottom surface of the second opening O2 is the top surface 124T of the corresponding second extension portion 124. Figure 1D shown.

[0080] The second retaining wall structure 130 extends along the first direction D1 and is located on the top surface 122T of the first extension portion 122. The vertical projection of each second extension portion 124 on the substrate 100 is located between the vertical projections of two adjacent second retaining wall structures 130 on the substrate 100 in the second direction D2.

[0081] In this embodiment, the bottom surface 130B of each second retaining wall structure 130 contacts the top surface 122T of the corresponding first extension portion 122, and the width W1 of the bottom surface 130B of each second retaining wall structure 130 is smaller than the width W2 of the top surface 122T of the corresponding first extension portion 122, so that the side surface 130S of the second retaining wall structure 130 is discontinuous with the side surface of the first extension portion 122.

[0082] In some embodiments, the thickness t3 of the second retaining wall structure 130 is 1 micron to 2 microns. In some embodiments, the first retaining wall structure 120 and the second retaining wall structure 130 include the same or different materials. In some embodiments, the first retaining wall structure 120 includes a cured positive photoresist material, and the second retaining wall structure 130 includes a cured negative photoresist material. In some embodiments, the first retaining wall structure 120 includes a hydrophilic material, and the second retaining wall structure 130 includes a hydrophobic material.

[0083] A plurality of organic light emitting layers 140 are located in the first opening O1. In the present embodiment, each organic light emitting layer 140 extends along the first direction D1 and fills the first opening O1 and the second opening O2 arranged in a row in the first direction D1. The organic light emitting layer 140 covers and contacts the top surface of the first electrode E1 and the top surface 124T of the second extension portion 124.

[0084] In the present embodiment, the organic light emitting layer 140 includes a first organic light emitting layer 142, a second organic light emitting layer 144, and a third organic light emitting layer 146. The first organic light emitting layer 142, the second organic light emitting layer 144, and the third organic light emitting layer 146 include, for example, organic light emitting materials of different colors. The first organic light emitting layer 142 extends along the first direction D1 and is filled in the first opening O1 and the second opening O2 arranged in a row in the first direction D1. The second organic light emitting layer 144 extends along the first direction D1 and is filled in the first opening O1 and the second opening O2 arranged in a row in the first direction D1. The third organic light emitting layer 146 extends along the first direction D1 and is filled in the first opening O1 and the second opening O2 arranged in a row in the first direction D1. The first organic light emitting layer 142, the second organic light emitting layer 144, and the third organic light emitting layer 146 are respectively filled in the first opening O1 and the second opening O2 in different rows.

[0085] In this embodiment, since the thickness t2 of the second extension portion 124 is less than the thickness t1 of the first extension portion 122, the organic light emitting layer 140 can more easily flow through the second extension portion 124 along the first direction D1, which helps to improve the process yield of forming the organic light emitting layer 140. In addition, this embodiment can also avoid the color deviation problem caused by the uneven distribution of the organic light emitting layer 140 on the top surface 124 of the second extension portion 124.

[0086] In addition, the first extension portion 122 with a relatively high thickness and the second retaining wall structure 130 located on the first extension portion 122 can be used to prevent organic light-emitting layers 140 of different colors from mixing with each other, thereby avoiding the problem of color shift.

[0087] In this embodiment, the organic light emitting layer 140 does not contact the side surface 130S of the second retaining wall structure 130 , but the present invention is not limited thereto. In other embodiments, the organic light emitting layer 140 contacts the side surface 130S of the second retaining wall structure 130 .

[0088] The common electrode E2 is located above the organic light emitting layer 140. In this embodiment, the common electrode E2 is also located above the first retaining wall structure 120 and the second retaining wall structure 130. In this embodiment, the common electrode E2 is located above the organic light emitting layer 140, the first retaining wall structure 120 and the second retaining wall structure 130.

[0089] Based on the above, the provision of the first extension portion 122 and the second extension portion 124 is helpful to improve the process yield of forming the organic light emitting layer 140 and avoid the color shift problem.

[0090] FIG. 2A to FIG. 2F is a top view of a method for manufacturing a pixel array substrate according to an embodiment of the present invention. It must be noted here that FIG. 2A to FIG. 2F The implementation examples are used Figures 1A to 1E The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0091] Please refer to Figure 2A , providing a substrate and an active device layer 110 located on the substrate. A plurality of first electrodes E1 are arrayed on the active device layer 110 along a first direction D1 and a second direction D2.

[0092] Please refer to Figure 2B and Figure 2C , forming a first retaining wall structure 120 on the active device layer 110 .

[0093] Please refer to Figure 2B , forming a first photoresist material layer 120' on the active device layer 110. The first photoresist material layer 120' is, for example, a positive photoresist material. Then, using the first mask as a mask, the first photoresist material layer 120' is illuminated with light (for example, ultraviolet light, near-ultraviolet light or other suitable light). In the present embodiment, the first mask is, for example, a half-tone mask or a gray-tone mask. For example, the first mask includes a plurality of first light-transmitting portions, a plurality of second light-transmitting portions and a plurality of light-shielding portions, and the transmittance of the first light-transmitting portions is different from the transmittance of the second light-transmitting portions.

[0094] Please refer to Figure 2C , a development process is performed to remove a portion of the first photoresist material layer 120' to form a first retaining wall structure 120. The first retaining wall structure 120 includes a plurality of first extensions 122, a plurality of second extensions 124, and an outer frame portion 126. The first extensions 122 extend along the first direction D1, and each second extension 124 is located between two adjacent first extensions 122 in the second direction D2. The first retaining wall structure 120 has a plurality of first openings O1 and a plurality of second openings O2. The first opening O1 exposes the first electrode E1.

[0095] The first extension portion 122 and the outer frame portion 126 correspond to the light shielding portion with the lowest transmittance in the first mask. Therefore, the first extension portion 122 and the outer frame portion 126 are not irradiated by light or are only irradiated by a small amount of light during the photolithography process, and thus retain a relatively large thickness after the development process.

[0096] The second extension portion 124 (or the second opening O2) corresponds to the second light-transmitting portion in the first mask having a higher transmittance than the light-shielding portion. Therefore, in the photolithography process, the first photoresist material layer 120' corresponding to the second extension portion 124 is partially illuminated by light, so that the first photoresist material layer 120' above the second extension portion 124 is removed in the development process, so that the thickness of the second extension portion 124 is smaller than the thickness of the first extension portion 122 and the outer frame portion 126.

[0097] The first opening O1 corresponds to the first light-transmitting portion with the highest transmittance in the first mask. Therefore, in the photolithography process, the first photoresist material layer 120 ′ corresponding to the first opening O1 is irradiated by light, so that the first photoresist material layer 120 ′ corresponding to the first opening O1 is completely removed in the development process.

[0098] Please refer to Figure 2D and Figure 2E , forming a plurality of second retaining wall structures 130 on the first extending portion 122 .

[0099] Please refer to Figure 2D , forming a second photoresist material layer 130' on the active device layer 110. The second photoresist material layer 130' covers the first retaining wall structure 120 and the first electrode E1. In the present embodiment, the second photoresist material layer 130' fills the first opening O1 and the second opening O2. The second photoresist material layer 130' is, for example, a negative photoresist material. Then, using the second mask as a mask, the second photoresist material layer 130' is irradiated with light (e.g., ultraviolet light, near-ultraviolet light, or other suitable light).

[0100] Please refer to Figure 2E , a development process is performed to remove a portion of the second photoresist material layer 130' to form a second retaining wall structure 130. The second retaining wall structure 130 is located on the first extension portion 122 and extends along the first direction D1.

[0101] Please refer to Figure 2F , a plurality of organic light emitting layers 140 are formed in the first opening O1 and the second opening O2 . The organic light emitting layer 140 is located on the second extension portion 124 .

[0102] In some embodiments, the method of forming the organic light-emitting layer 140 includes inkjet printing. Ink droplets containing organic light-emitting materials are sprayed into the first opening O1 and the second opening O2, and the ink droplets flow into the first opening O1 and the second opening O2. In this embodiment, since the thickness of the second extension portion 124 is less than the thickness of the first extension portion 122, the ink droplets can more easily flow along the first direction D1 over the top surface of the second extension portion 124, so that the ink droplets can be distributed more evenly. Then, the ink droplets are cured to form the organic light-emitting layer 140.

[0103] In this embodiment, the organic light emitting layer 140 includes a first organic light emitting layer 142 , a second organic light emitting layer 144 and a third organic light emitting layer 146 .

[0104] Finally, a second electrode E2 is formed on the organic light emitting layer 140 to obtain Figures 1A to 1E A pixel array substrate 10 is provided.

[0105] Figure 3 FIG. 1 is a partial top view of a first mask according to an embodiment of the present invention. It must be noted that: Figure 3 The implementation examples are used Figures 1A to 1E as well as FIG. 2A to FIG. 2F The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0106] Please refer to Figure 3 In this embodiment, the first mask M1 is a grayscale mask and includes a plurality of first light-transmitting portions P1, a plurality of second light-transmitting portions P2, and a light-shielding portion P3. The light-shielding portion P3 has a lower transmittance than the second light-transmitting portion P2, and the second light-transmitting portion P2 has a lower transmittance than the first light-transmitting portion P1. The transmittance of the aforementioned light, for example, refers to the transmittance of ultraviolet light, near-ultraviolet light, or other suitable light.

[0107] In some embodiments, the light shielding portion P3 includes a solid light shielding material, such as chromium. The second light-transmitting portion P2 includes a plurality of light shielding structures L, such as chromium, and a plurality of gaps ST are provided between the light shielding structures L in the second light-transmitting portion P2, and the gaps ST separate the light shielding structures L from each other. In some embodiments, the width LW of each light shielding structure L is 800 nanometers to 3500 nanometers, and the width SW of each gap ST is 600 nanometers to 1000 nanometers.

[0108] In this embodiment, the extending direction X1 of the light shielding structure L and the slit ST is perpendicular to the side surface P3S of the adjacent light shielding portion P3, but the present invention is not limited thereto. The extending direction X1 of the light shielding structure L and the slit ST may not be perpendicular to the side surface P3S of the adjacent light shielding portion P3.

[0109] In some embodiments, the average transmittance (Tr%) of the second light-transmitting portion P2 and the transmittance variation (ΔTr%) of the light-shielding structure L and the gap ST in the second light-transmitting portion P2 can be obtained by simulation, and the results are shown in Table 1.

[0110] Table 1

[0111]

[0112] In some embodiments, if the variation of the transmittance is less than 0.4%, the second light-transmitting portion may define a second extension portion with a relatively flat top surface. If the variation of the transmittance is greater than 0.4%, the second light-transmitting portion may define a second extension portion with a wavy top surface or a grooved top surface.

[0113] Figure 4 FIG. 1 is a partial top view of a first mask according to an embodiment of the present invention. It must be noted that: Figure 4 The implementation examples are used Figure 3 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0114] Figure 4 The first mask M1a and Figure 3 The main differences of the first mask M1 are: Figure 4 The extending direction X2 of the light shielding structure La and the slit STa of the second light-transmitting portion P2a of the first mask M1a is parallel to the side surface P3S of the adjacent light shielding portion P3.

[0115] Figure 5 FIG. 1 is a partial top view of a first mask according to an embodiment of the present invention. It must be noted that: Figure 5 The implementation examples are used Figure 3 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0116] Figure 5 The first mask M1b is Figure 3 The main differences of the first mask M1 are: Figure 5 The first mask M1b is a half-tone mask.

[0117] Please refer to Figure 5 In this embodiment, the second light-transmitting portion P2b is made of a semi-transparent material. The transmittance of the second light-transmitting portion P2b is greater than the transmittance of the first light-transmitting portion P1, and the transmittance of the second light-transmitting portion P2b is less than the transmittance of the light-shielding portion P3.

[0118] Fig. 6A It is a partial top view of a pixel array substrate according to an embodiment of the present invention. Figure 6B It is along Fig. 6A For the convenience of explanation, Fig. 6A Omitted Figure 6B The organic light emitting layer 140 and the second electrode E2.

[0119] It must be pointed out here that Fig. 6A and Figure 6B The implementation examples are used Figures 1A to 1E as well as FIG. 2A to FIG. 2F The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0120] Please refer to Fig. 6A and Figure 6B In this embodiment, each second extension portion 124 of the pixel array substrate 10a has a plurality of grooves GV, and the grooves GV are located at the bottom of the second opening O2. Figure 3 The first mask M1 defines the shape of the first retaining wall structure 120, and by adjusting the width LW of the light shielding structure L and the width SW of the gap ST in the second light-transmitting portion P2, the transmittance variation is greater than 0.4%, thereby manufacturing a second extension portion 124 having a plurality of grooves GV. It should be noted that Fig. 6A and Figure 6B The number of grooves GV and Figure 3 The number of the light shielding structures L and the slits ST is only for illustration and is not intended to limit the present invention.

[0121] In this embodiment, the groove GV penetrates the second extension portion 124, but the present invention is not limited thereto. In other embodiments, the groove GV does not penetrate the second extension portion 124. In other words, in other embodiments, the depth of the groove GV is less than the thickness of the second extension portion 124. The organic light emitting layer 140 is filled in the groove GV.

[0122] In some embodiments, the same first mask M1 is used as a mask to illuminate different portions of the first photoresist material layer to form the first retaining wall structure 120. For example, the first mask M1 is moved to the top of the first portion of the first photoresist material layer (eg, corresponding to Figure 6B Then, the first mask M1 is moved to the area R1 in the first photoresist material layer (for example, corresponding to the second part of the first photoresist material layer). Figure 6B Then, the second portion is illuminated, wherein the first portion is connected to the second portion; and finally, the first photoresist material layer is developed.

[0123] Through the above method, even if the area of ​​the first mask M1 is smaller than the area of ​​the first photoresist material layer, the shape of the first retaining wall structure 120 can still be defined by a first mask M1. In this embodiment, the second extension portion 124 is located at the intersection of the position corresponding to the aforementioned first part and the position corresponding to the aforementioned second part. Since the groove GV of the second extension portion 124 is approximately parallel to the intersection of the first part and the second part (for example, approximately perpendicular to the extension direction of the organic light-emitting layer 140, that is, approximately perpendicular to the first direction D1), even if the first mask M1 deviates during the movement process, the structure of the second extension portion 124 at the intersection of the first part and the second part will not be significantly different from the second extension portion 124 at other positions. In other words, this embodiment can reduce the problem of inconsistent structure of the second extension portion 124 caused by deviation of mask movement, thereby avoiding the influence of the display screen due to inconsistent structure of the second extension portion 124.

[0124] In some embodiments, the active device layer 110 further includes a signal line DL. The position of the signal line DL in the active device layer 110 can be adjusted according to requirements. In this embodiment, the signal line DL is located on the dielectric layer 12 and overlaps the second extension portion 124, but the present invention is not limited thereto.

[0125] Fig. 7A It is a partial top view of a pixel array substrate according to an embodiment of the present invention. Figure 7B It is along Fig. 7A For the convenience of explanation, Fig. 7A Omitted Figure 7B The organic light emitting layer 140 and the second electrode E2.

[0126] It must be pointed out here that Fig. 7A and Figure 7B The implementation examples are used Fig. 6A as well as Figure 6B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0127] Please refer to Fig. 7A and Figure 7B In this embodiment, each second extension portion 124 of the pixel array substrate 10b has a plurality of grooves GVa, and the grooves GVa are located at the bottom of the second opening O2. Figure 4The first mask M1a defines the shape of the first retaining wall structure 120, and by adjusting the width LW of the light shielding structure La and the width SW of the gap STa in the second light-transmitting portion P2a, the transmittance variation is greater than 0.4%, thereby manufacturing a second extension portion 124 having multiple grooves GVa. It should be noted that Fig. 7A and Figure 7B The number of grooves GVa and Figure 4 The number of the shading structures La and the gaps STa is only for illustration and is not intended to limit the present invention.

[0128] In this embodiment, the groove GVa penetrates the second extension portion 124, but the present invention is not limited thereto. In other embodiments, the groove GVa does not penetrate the second extension portion 124. In other words, in other embodiments, the depth of the groove GVa is less than the thickness of the second extension portion 124. The organic light emitting layer 140 is filled in the groove GVa.

[0129] In the present embodiment, each groove GVa extends from one side surface 124S of the corresponding second extending portion 124 to the other side surface 124S of the corresponding second extending portion 124 .

[0130] In this embodiment, the groove GVa of the second extension portion 124 is approximately parallel to the extension direction of the organic light-emitting layer 140, that is, approximately parallel to the first direction D1. Therefore, ink droplets containing organic light-emitting materials can more easily pass through the groove GVa and flow into the multiple first openings O1 arranged in the first direction D1.

[0131] Based on the above, by disposing the groove GVa, the organic light emitting layer 140 can be more evenly distributed in the first openings O1 on the same column.

[0132] FIG. 8A to FIG. 11A It is a top view of a method for manufacturing a first retaining wall structure according to an embodiment of the present invention. FIG. 8B to FIG. 11B Along the FIG. 8A to FIG. 11A Schematic cross-sectional view of line c-c'.

[0133] It must be pointed out here that FIG. 8A to FIG. 11A as well as FIG. 8B to FIG. 11B The implementation examples are used Figures 1A to 1E as well as FIG. 2A to FIG. 2F The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0134] Please refer to Fig. 8A and Figure 8B, forming a first photoresist material layer 124' on the active device layer 110. The first photoresist material layer 124' covers the plurality of first electrodes and the active device layer 110. In this embodiment, the first photoresist material layer 124' comprises a positive photoresist. In some embodiments, the thickness t2 of the first photoresist material layer 124' is 0.9 micrometers to 1.3 micrometers.

[0135] Please refer to Fig.9A and Fig. 9B , with a first mask 124M (such as Fig. 9C 124M is a mask, and the first photoresist material layer 124' is illuminated. The first mask 124M includes a light-transmitting portion P1a and a plurality of light-shielding portions P3a separated from each other.

[0136] Then, a development process is performed to remove a portion of the first photoresist material layer 124' to form a plurality of second extension portions 124. The second extension portions 124 correspond to the positions of the light shielding portions P3a.

[0137] In this embodiment, each second extension portion 124 is separated from each other and is located between the first electrodes E1 in the first direction D1. In some embodiments, the thickness t2 of the second extension portion 124 is substantially equal to or slightly smaller than the thickness t2 of the first photoresist material layer 124'.

[0138] Please refer to Fig. 10A and Fig. 10B , forming a second photoresist material layer 122' on the active device layer 110. In the present embodiment, the second photoresist material layer 122' covers the second extension portion, the first electrode and the active device layer 110. In some embodiments, the second photoresist material layer 122' includes a material that is the same as or different from the first photoresist material layer. In the present embodiment, the second photoresist material layer 122' includes a positive photoresist, but the present invention is not limited thereto. In other embodiments, the second photoresist material layer 122' includes a negative photoresist. The thickness t1 of the second photoresist material layer 122' is greater than the thickness t2 of the first photoresist material layer 124 (please refer to Figure 8B ).

[0139] Please refer to Fig.11A and Fig. 11B , the second mask 122M is a mask (such as Fig. 11C As shown in FIG. 1 , the second photoresist material layer 122′ is illuminated. The second mask 122M includes a plurality of light-transmitting portions P1b separated from each other and at least one light-shielding portion P3b.

[0140] Then, a development process is performed to remove a portion of the second photoresist material layer 122' to form the first extension portion 122 and the outer frame portion 126. In this embodiment, the first extension portion 122 and the outer frame portion 126 correspond to the position of the light shielding portion P3b, and the first opening O1, the second opening O2 and the second extension portion 124 correspond to the light transmitting portion P1b.

[0141] In this embodiment, since the thickness of the second photoresist material layer is greater than the thickness of the first photoresist material layer, the thickness t1 of the first extending portion 122 is greater than the thickness of the second extending portion 124 .

[0142] In summary, in some embodiments, by making the thickness of the first extension portion greater than the thickness of the second extension portion, the process yield of forming the organic light-emitting layer can be improved, thereby reducing the color shift problem caused by uneven distribution of the organic light-emitting layer.

Claims

1. A pixel array substrate, comprising: a base; an active component layer located on the substrate; A first retaining wall structure is located on the active device layer and has a plurality of first openings, and includes: A plurality of first extension portions extending along a first direction; as well as A plurality of second extension portions, each of which is located between two adjacent first extension portions in a second direction, wherein at least a portion of the first openings are surrounded by the corresponding two first extension portions and the corresponding two second extension portions, wherein the thickness of the first extension portions is greater than that of the second extension portions, and each of the second extension portions has a plurality of grooves; A plurality of second retaining wall structures extending along the first direction and located on the first extension portions, wherein a vertical projection of each second extension portion on the base is located between vertical projections of two adjacent second retaining wall structures on the base in the second direction; and A plurality of organic light-emitting layers are located in the first openings and on the second extensions, The bottom surface of each second retaining wall structure contacts the top surface of the corresponding first extending portion. 2 . The pixel array substrate as claimed in claim 1 , wherein the grooves are parallel to the first direction or perpendicular to the first direction. 3 . The pixel array substrate as claimed in claim 1 , wherein each of the grooves extends from one side surface of the corresponding second extending portion to another side surface of the corresponding second extending portion. 4 . The pixel array substrate as claimed in claim 1 , wherein the organic light emitting layers cover and contact top surfaces of the second extension portions. 5 . The pixel array substrate as claimed in claim 1 , wherein the first retaining wall structure comprises a cured positive photoresist material, and the second retaining wall structures comprise a cured negative photoresist material. 6 . The pixel array substrate as claimed in claim 1 , wherein a width of a bottom surface of each of the second retaining wall structures is smaller than a width of a top surface of the corresponding first extending portion.

7. A pixel array substrate as described in claim 1, wherein the first retaining wall structure also includes a plurality of second openings, wherein the second openings are located above the second extension portions, wherein the two opposite side walls of each of the second openings are respectively the side surfaces of two adjacent first extension portions, and the bottom surface of each of the second openings is the top surface of the corresponding second extension portion, wherein each of the organic light-emitting layers is filled in the first openings and the second openings arranged in a row in the first direction.

8. A method for manufacturing a pixel array substrate, comprising: Providing a substrate and an active device layer located on the substrate; A first retaining wall structure is formed on the active device layer, wherein the first retaining wall structure has a plurality of first openings and includes: A plurality of first extension portions extending along a first direction; as well as a plurality of second extension portions, each of which is located between two adjacent first extension portions in a second direction, wherein at least a portion of the first opening is surrounded by the corresponding two first extension portions and the corresponding two second extension portions, wherein the thickness of the first extension portions is greater than the thickness of the second extension portions; forming a plurality of second retaining wall structures on the first extension portions; and A plurality of organic light-emitting layers are formed in the first openings and on the second extensions.

9. The method for manufacturing a pixel array substrate as claimed in claim 8, wherein the method of forming the first retaining wall structure on the active device layer comprises: forming a first photoresist material layer on the active device layer; Using a first mask as a mask, irradiating the first photoresist material layer with light, wherein the first mask comprises a plurality of first light-transmitting portions, a plurality of second light-transmitting portions and a light-shielding portion, and the transmittance of the first light-transmitting portions is different from the transmittance of the second light-transmitting portions; as well as A development process is performed to remove a portion of the first photoresist material layer to form the first retaining wall structure, wherein the first extensions correspond to the light shielding portions, the second extensions correspond to the second light transparent portions, and the first openings correspond to the first light transparent portions.

10. The method for manufacturing a pixel array substrate as described in claim 9, wherein each of the second light-transmitting portions comprises a plurality of light-shielding structures, wherein a plurality of gaps are provided between the light-shielding structures, and the gaps separate the light-shielding structures from each other, and wherein a width of each of the light-shielding structures is 800 nanometers to 3500 nanometers, and a width of each of the gaps is 600 nanometers to 1000 nanometers. 11 . The method for manufacturing a pixel array substrate as claimed in claim 10 , wherein a variation range of the transmittance of the second light-transmitting portion is greater than 0.4%.

12. The method for manufacturing a pixel array substrate as claimed in claim 8, wherein the method of forming the first retaining wall structure on the active device layer comprises: forming a first photoresist material layer on the active device layer; Using a first mask as a mask, irradiating the first photoresist material layer with light; Performing a development process to remove a portion of the first photoresist material layer to form the second extension portions; Forming a second photoresist material layer on the active device layer, wherein the thickness of the second photoresist material layer is greater than the thickness of the first photoresist material layer; Using a second mask as a mask, irradiating the second photoresist material layer with light; as well as A development process is performed to remove a portion of the second photoresist material layer to form the first extension portions.

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