A method for testing the high-power microwave damage threshold of solar cells

Abstract

The invention provides a method for testing a high-power microwave damage threshold of a solar cell. The method comprises the following steps: using a solar cell panel as a test target panel, using a test platform to simulate high-power microwaves in a real environment, controlling the injection power of the high-power microwaves, injecting the high-power microwaves into a test target, testing to obtain the output power of the test target panel after each increase in injection power, the injection power at each time, the temperature in the test target panel, and an I-V characteristic curve of the test target panel after each increase in injection power; determining the maximum output power of the test target panel after each increase in injection power according to the I-V characteristic curve; comparing whether two high-power microwave damage threshold powers are the same to determine the high-power microwave damage threshold without a cumulative effect, providing a real environment reference for subsequent damage identification of the solar cell panel, providing an effective parameter benchmark for subsequent research and development of solar cell panels to improve performance, and reducing the damage probability of the solar cell panel.

Description

Technical Field

[0001] The invention belongs to the technical field of battery performance testing, and in particular relates to a method for testing a high-power microwave damage threshold of a solar cell. Background Art

[0002] As a renewable energy source, solar cells play an important role in aerospace, military and other fields. With the continuous development of aerospace technology, the endurance of satellites is constantly improving. Traditional battery power supply can no longer maintain the normal operation of satellites, while solar cells have the advantages of long life, high energy conversion rate and high power, and have gradually become the core of satellite power supply systems. With the continuous development of science and technology, the application of solar cells is becoming more and more extensive, and has expanded from military, aerospace and other fields to industrial, commercial, agricultural and other fields. It has been widely used in photovoltaic power stations, lighting power supplies, transportation and communication and other fields. High power microwave (HPM) is an important form of strong electromagnetic pulse (EMP), which has the characteristics of high frequency, high power and wide range. Compared with other transmission media such as lasers, high power microwaves have higher conversion efficiency and stability in long-distance wireless power transfer (WPT) (especially for 2.4GHz and 5.8GHz transmission frequencies).

[0003] With the rapid development of science and technology in recent years, the new electronic warfare not only includes the use of electronic interference and other means to prevent the enemy from using the electromagnetic spectrum, but also includes the use of high-power directional electromagnetic weapons with destructive performance to accurately attack the enemy's electronic and electrical equipment, causing fatal damage. High-power microwave weapons, as a new type of electromagnetic weapon, play an increasingly important role in modern warfare. As a "beam energy weapon", it is very easy to enter the electronic system through coupling, causing semiconductor components to malfunction or even permanently fail. The high-energy electromagnetic waves emitted by high-power microwave weapons will produce electrical and thermal effects in the process of interacting with the target. The electrical effect refers to the high-power microwave radiation target causing the target system metal surface, cabin, cable and other structures to generate induced current and induced voltage, thereby causing the target device to malfunction or even directly cause electrical breakdown.

[0004] There are currently two main methods for testing high-power microwave effects on electronic systems: system-level irradiation method and pulse injection method.

[0005] System-level irradiation test refers to a method of placing the system to be tested in an open electromagnetic environment for direct testing. It has a wide coverage range and can perform high-power microwave radiation on the entire electronic system, which is closer to the real electromagnetic environment. However, the disadvantages are also obvious. First, high-power microwave simulators are usually large in size and difficult to move. A lot of preparation work is required in the early stage of the test, which is costly. Second, under the test conditions, the high-power microwave intensity is high, which may have an impact on the surrounding residents, so it is necessary to set up electromagnetic radiation hazard area warnings and high-voltage warnings. Third, a large number of monitoring equipment is required, and the accuracy requirements of the monitoring equipment are relatively high. Moreover, the monitoring equipment also needs to have a certain anti-interference ability against the high-power microwave environment.

[0006] The pulse injection method refers to injecting a large voltage or a large current directly into the input and output ports of the device under test or the shielding shell of the device, in order to replace high-power microwaves. Compared with the system-level irradiation test, the pulse source is small in size and easy to coordinate. It will not cause electromagnetic pollution to the environment and is relatively less harmful to the test personnel. Therefore, the pulse injection method is more widely used.

[0007] The prior art achieves the purpose of testing by testing the electromagnetic pulse damage threshold of solar cells based on a transmission line pulse generator (TLP). This method is based on the pulse injection method. Using the TLP test system, a high-level single pulse is injected into the battery through the solar cell electrode port to simulate the situation in which the solar cell is interfered with by a strong electromagnetic pulse in the actual use environment. However, the actual high-power microwave interference time is in the order of seconds. Due to the TLP device itself, the high-level duration of the TLP output voltage is only 200ns at most. The time is too short, so the output current cannot be maintained for a long time, and the solar cell cannot be significantly damaged. Therefore, TLP cannot completely simulate the interference of high-power microwaves in the actual environment. Summary of the invention

[0008] In order to solve the above problems existing in the prior art, the present invention provides a method for testing the high-power microwave damage threshold of a solar cell. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0009] A test method for a high-power microwave damage threshold of a solar cell provided by the present invention uses a test platform, a solar cell panel is placed on the test platform, and the test method includes:

[0010] Step 1: Get multiple solar panels;

[0011] Wherein, the plurality of solar panels include a first solar panel, a second solar panel and a third solar panel;

[0012] Step 2: Using the first solar cell panel as a test target panel, a matching circuit is set between the test target panel and the test platform, so that the external impedance of the overall structure consisting of the test target panel and the matching circuit matches the test signal impedance generated by the test platform, so as to reduce reflection of the test signal;

[0013] Step 3: Simulate high-power microwaves in a real environment and control the injection power of high-power microwaves, inject them into the test target, and test the output power of the test target board after each increase in injection power, the temperature inside the test target board after each injection power increase, and the IV characteristic curve of the test target board after each injection power increase;

[0014] Step 3: According to the IV characteristic curve, determine the maximum output power of the test target board after each increase in injection power;

[0015] Step 4: If the ratio of the maximum output power to the output power of the test target board before the test is lower than the preset damage percentage, the injected power is deemed to be the high-power microwave damage threshold power that causes damage to the test target board;

[0016] Step 5: Starting from a first preset value lower than the high-power microwave damage threshold power, the second solar cell panel is selected as a new test target panel, and the test process from step 3 to step 4 is repeated to test the test target panel until it is determined that the second solar cell panel reaches the high-power microwave damage threshold power;

[0017] Step 6: Determine whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, so as to determine whether there is a cumulative effect in the test process of the test target panel;

[0018] Step 7: If there is an accumulation effect, the third solar cell panel is selected as a new test target, and starting from a second preset value of the high-power microwave damage threshold power lower than the second solar cell panel, the test process of steps 3 to 4 is repeated to test the test target panel until it is determined that the third solar cell panel reaches the high-power microwave damage threshold power, and the high-power microwave damage threshold power without the accumulation effect is obtained.

[0019] Optionally, the test platform includes: a radio frequency signal source, an isolator, a power amplifier, an adjustable attenuator, a circulator, a load, a first power meter, a directional coupler, a light source, a thermal imager, an attenuator, and a second power meter;

[0020] The RF signal originates from the isolator and is connected to transmit the continuous high-frequency sinusoidal signal generated by itself to the power amplifier through the isolator;

[0021] Isolator, used to isolate and protect the reflected waves and echoes from damaging the test target board and RF signal source;

[0022] A power amplifier is used to amplify the power of a continuous high-frequency sinusoidal signal to simulate high-power microwaves in a real environment and output it to an adjustable attenuator;

[0023] An adjustable attenuator is used to control the output power of the high-power microwave to increase in sequence according to a preset step;

[0024] Circulator, used to isolate and protect reflected waves and echoes from damaging other devices;

[0025] A load, for providing an output circuit for the circulator;

[0026] a directional coupler, used for controlling a test power range of the high-power microwave of the first power meter, so as to prevent the high-power microwave from damaging the first power meter;

[0027] Light source, used to provide the solar panels with the same lighting as the real environment;

[0028] A first power meter is used to monitor the input power injected into the solar panel by the directional coupler each time;

[0029] An attenuator is used to control a test power range of the output power of the solar panel tested by the second power meter, so as to prevent the high-power microwave from damaging the second power meter;

[0030] A thermal imager is used to monitor the temperature of the solar panels each time high-power microwaves are injected.

[0031] Optionally, step 6 includes:

[0032] It is determined whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same. If the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, there is no accumulation effect on the test process of the test target panel; if they are not the same, there is an accumulation effect on the test process of the test target panel.

[0033] Optionally, after step 6, the testing method further includes:

[0034] If there is no accumulation effect, the injected power causing damage to the second solar cell panel is determined as the high power microwave damage threshold power.

[0035] Optionally, after step 7, the testing method further includes:

[0036] Slicing at least one of the lost plurality of solar panels;

[0037] The position of the maximum temperature point in the section is assisted in positioning to determine the vulnerable point of the solar panel.

[0038] Optionally, assisting in locating the maximum temperature point in the section to determine the vulnerable point of the solar panel includes:

[0039] Use a thermal imager to assist in locating the maximum temperature point in the slice;

[0040] At the location of the maximum temperature point of the slice, the electron microscope observes the damage morphology of the slice to determine the vulnerable point of the solar panel.

[0041] The invention provides a method for testing a high-power microwave damage threshold of a solar cell. The method comprises the following steps: using a solar cell panel as a test target panel, using a test platform to simulate high-power microwaves in a real environment, controlling the injection power of the high-power microwaves, injecting the high-power microwaves into the test target, testing to obtain the output power of the test target panel after each injection power increase, the temperature in the test target panel after each injection power increase, and an IV characteristic curve of the test target panel after each injection power increase; determining the maximum output power of the test target panel after each injection power increase according to the IV characteristic curve; comparing whether the two high-power microwave damage threshold powers are the same to determine the high-power microwave damage threshold without a cumulative effect, providing a real environment reference for subsequent damage identification of the solar cell panel, providing an effective parameter benchmark for subsequent research and development of solar cell panels to improve performance, and reducing the damage probability of the solar cell panel.

[0042] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a schematic diagram of a test platform provided by an embodiment of the present invention;

[0044] Figure 2 It is a flow chart of a method for testing a high-power microwave damage threshold of a solar cell provided by an embodiment of the present invention;

[0045] Figure 3 is a schematic diagram of the IV characteristic test of a solar cell provided by an embodiment of the present invention;

[0046] Figure 4 It is a comparison diagram of IV characteristic curves of a triple-junction gallium arsenide solar cell before and after microwave injection provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0048] The test target board of the present invention can adopt gallium arsenide solar cells, because gallium arsenide solar cells are gradually being tested and applied on various small spacecraft abroad. The bandgap width of gallium arsenide is 1.42eV, which is located in the bandgap width interval (1.2-1.6eV) required for high photoelectric conversion efficiency. In addition, gallium arsenide has good high temperature resistance and radiation resistance, which better meets the requirements of aerospace missions. Among them, triple-junction gallium arsenide solar cells are popular because they are composed of three sub-cells with different bandgap widths, which can absorb more light wave frequency bands and thus improve the photoelectric conversion efficiency. Therefore, large-scale space solar power stations (Space Solar Power Station, SSPS) mostly use triple-junction gallium arsenide solar cells. With the deterioration of the electromagnetic environment and the widespread application of electronic devices on spacecraft, spacecraft systems have become an important target of modern warfare, so it is very important to ensure that gallium arsenide solar cells can work stably in high-power microwave environments in space. The present invention can be applied to triple-junction gallium arsenide solar cells, and Table 1 is the structural doping and other parameters of triple-junction gallium arsenide solar cells.

[0049] Table 1 Structural parameters of triple-junction GaAs solar cells

[0050]

[0051]

[0052] The present invention provides a method for testing the high-power microwave damage threshold of a solar cell. The method uses a test platform, and a solar cell panel is placed on the test platform.

[0053] like Figure 1 As shown, the test platform of the present invention includes: a radio frequency signal source, an isolator, a power amplifier, an adjustable attenuator, a circulator, a load, a first power meter, a directional coupler, a light source, a thermal imager, an attenuator and a second power meter;

[0054] The RF signal originates from the isolator and is connected to transmit the continuous high-frequency sinusoidal signal generated by itself to the power amplifier through the isolator;

[0055] Isolator, used to isolate and protect the reflected waves and echoes from damaging the test target board and RF signal source;

[0056] A power amplifier is used to amplify the power of a continuous high-frequency sinusoidal signal to simulate high-power microwaves in a real environment and output it to an adjustable attenuator;

[0057] An adjustable attenuator is used to control the output power of the high-power microwave to increase in sequence according to a preset step;

[0058] Circulator, used to isolate and protect reflected waves and echoes from damaging other devices;

[0059] A load, for providing an output circuit for the circulator;

[0060] a directional coupler, used for controlling a test power range of the high-power microwave of the first power meter, so as to prevent the high-power microwave from damaging the first power meter;

[0061] Light source, used to provide the solar panels with the same lighting as the real environment;

[0062] Among them, the same environment is infinitely close to the real environment and is considered to be the same during simulation.

[0063] A first power meter is used to monitor the input power injected into the solar panel by the directional coupler each time;

[0064] An attenuator is used to control a test power range of the output power of the solar panel tested by the second power meter, so as to prevent the high-power microwave from damaging the second power meter;

[0065] Thermal imagers are used to monitor the internal temperature of solar panels each time high-power microwaves are injected.

[0066] It is worth noting that: the pulse signal is a continuous high-frequency sinusoidal signal generated by the RF signal source, and then its power is amplified by the power amplifier to simulate the high-power microwave in the real environment; the adjustable attenuator in the platform can control the output power of the microwave source; the circulator and isolator are used to protect the reflected waves and echoes from damaging the test equipment and signal source; the power meter is connected to the directional coupler to monitor the average power of each injection; the output is connected to the attenuator and the power meter to measure the power at the output port; the injected power should be the power actually injected into the solar panel, that is, the power consumed by the solar panel, which is the result of subtracting the output power from the input power. The thermal imager is used to monitor the temperature of the solar panel each time a high-power microwave is injected.

[0067] like Figure 2 As shown, the testing method of the present invention comprises:

[0068] Step 1: Get multiple solar panels;

[0069] Wherein, the plurality of solar panels include a first solar panel, a second solar panel and a third solar panel;

[0070] Step 2: Using the first solar cell panel as a test target panel, a matching circuit is set between the test target panel and the test platform, so that the external impedance of the overall structure consisting of the test target panel and the matching circuit matches the test signal impedance generated by the test platform, so as to reduce reflection of the test signal;

[0071] It is worth noting that: in actual design, the present invention can design a matching circuit for a solar panel so that the overall impedance of the solar panel presents a matching value of 50 ohms, and reserve RF injection ports at the cathode and anode. Test the IV characteristic curve of the solar panel to obtain the maximum output power.

[0072] Step 3: Simulate high-power microwaves in a real environment and control the injection power of high-power microwaves, inject them into the test target, and test the output power of the test target board after each increase in injection power, the temperature inside the test target board after each injection power increase, and the IV characteristic curve of the test target board after each injection power increase;

[0073] It is worth noting that: the RF sinusoidal pulse is injected into the solar panel through the RF input port of the solar cell. The process is: adjust the adjustable attenuator so that the injected power gradually increases from 0dBm, with each step of 1dBm. After each injection, the IV characteristic curve of the solar panel is tested to obtain the maximum output power. During the entire test process, the lighting conditions of the solar panel are the same to ensure that the light will not affect the test process.

[0074] Step 3: According to the IV characteristic curve, determine the maximum output power of the test target board after each increase in injection power;

[0075] Step 4: If the ratio of the maximum output power to the output power of the test target board before the test is lower than the preset damage percentage, the injected power is deemed to be the high-power microwave damage threshold power that causes damage to the test target board;

[0076] It is worth noting that: if the maximum output power obtained by the present invention decays to less than 92% of that before the test, then the power injected into the solar cell panel at this time is the high-power microwave damage threshold power; if it does not decay to less than 92% of that before the test, proceed to step 5. Figure 3 The comparison of the IV characteristic curves of the triple-junction gallium arsenide solar cell before and after microwave injection shows that the IV curve is normal before injection, with the maximum output power point at (1.78, 1.03) and the maximum output power at 1.83mW. After microwave injection, the IV characteristic of the triple-junction gallium arsenide solar cell panel is abnormal, with the maximum output power point at (0.35, 0.67) and the maximum output power at 0.23mW, attenuating to 12.6% of the original value. At this time, the power injected into the triple-junction gallium arsenide solar cell is the high-power microwave damage threshold of the cell.

[0077] Step 5: Starting from a first preset value lower than the high-power microwave damage threshold power, the second solar cell panel is selected as a new test target panel, and the test process from step 3 to step 4 is repeated to test the test target panel until it is determined that the second solar cell panel reaches the high-power microwave damage threshold power;

[0078] In this step, a new solar cell panel from the same batch with the same maximum output power as the previous solar cell is selected to repeat the test process. However, high-power microwaves are injected in increments of 1 dBm from low to high based on the -10 dB high-power microwave damage threshold power recorded in the previous panel. Steps (4) and (5) are repeated to obtain the damage threshold power of this solar cell panel.

[0079] Step 6: Determine whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, so as to determine whether there is a cumulative effect in the test process of the test target panel;

[0080] It is worth noting that if the damage threshold powers are the same twice, it means that there is no accumulation effect.

[0081] As an optional embodiment of the present invention, step 6 includes:

[0082] It is determined whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same. If the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, there is no accumulation effect on the test process of the test target panel; if they are not the same, there is an accumulation effect on the test process of the test target panel.

[0083] Step 7: If there is an accumulation effect, the third solar cell panel is selected as a new test target, and starting from a second preset value of the high-power microwave damage threshold power lower than the second solar cell panel, the test process of steps 3 to 4 is repeated to test the test target panel until it is determined that the third solar cell panel reaches the high-power microwave damage threshold power, and the high-power microwave damage threshold power without the accumulation effect is obtained.

[0084] It is worth noting that if the two times are different, it means that there is a cumulative effect. Select a new solar panel again, and inject high-power microwaves at -5dB of the damage threshold power of the second solar panel in steps of 1dBm from low to high. Repeat steps 3-4 to obtain the damage threshold power of this solar panel. This damage threshold power is the high-power microwave damage threshold power without cumulative effect.

[0085] The invention provides a method for testing a high-power microwave damage threshold of a solar cell. The method comprises the following steps: obtaining a plurality of solar panels, taking the solar panels as test target panels, using a test platform to simulate high-power microwaves in a real environment and controlling the injection power of the high-power microwaves to inject the high-power microwaves into the test target, testing to obtain the output power of the test target panel after each increase in injection power, the temperature in the test target panel after each injection power increase, and an IV characteristic curve of the test target panel after each injection power increase; determining the maximum output power of the test target panel after each injection power increase according to the IV characteristic curve; comparing whether the two high-power microwave damage threshold powers are the same to determine the high-power microwave damage threshold without a cumulative effect, providing a real environment reference for subsequent damage identification of the solar panel, providing an effective parameter benchmark for subsequent research and development of solar panel performance improvement, and reducing the damage probability of the solar panel.

[0086] As an optional embodiment of the present invention, after step 6, the testing method further includes:

[0087] If there is no accumulation effect, the injected power causing damage to the second solar cell panel is determined as the high power microwave damage threshold power.

[0088] As an optional embodiment of the present invention, after step 7, the testing method further includes:

[0089] Slicing at least one of the lost plurality of solar panels;

[0090] The position of the maximum temperature point in the section is assisted in positioning to determine the vulnerable point of the solar panel.

[0091] The present invention can use a thermal imager to assist in locating the position of the maximum temperature point in the slice; at the position of the maximum temperature point of the slice, an electron microscope observes the damage appearance of the slice to determine the vulnerable point of the solar cell panel.

[0092] It is worth mentioning that the present invention can section damaged solar panels. In addition to using the basic sectioning method: EMMI positioning technology to locate the damage point, the position of the high-temperature point photographed by a thermal imager in the test can be used for auxiliary positioning, and then an electron microscope is used to observe the damage appearance of the solar panel, so as to determine the vulnerable points of the solar panel.

[0093] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0094] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0095] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0096] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A method for testing the high-power microwave damage threshold of a solar cell, characterized in that: A test platform is used, a solar panel is placed on the test platform, and the test method includes: Step 1: Get multiple solar panels; Wherein, the plurality of solar panels include a first solar panel, a second solar panel and a third solar panel; Step 2: Using the first solar cell panel as a test target panel, a matching circuit is set between the test target panel and the test platform, so that the external impedance of the overall structure consisting of the test target panel and the matching circuit matches the test signal impedance generated by the test platform, so as to reduce reflection of the test signal; Step 3: Simulate high-power microwaves in a real environment and control the injection power of the high-power microwaves, inject them into the test target, and test the output power of the test target board after each increase in injection power, the injection power at each time, the temperature in the test target board, and the IV characteristic curve of the test target board after each increase in injection power; Step 3: According to the IV characteristic curve, determine the maximum output power of the test target board after each increase in injection power; Step 4: If the ratio of the maximum output power to the output power of the test target board before the test is lower than the preset damage percentage, the injected power is deemed to be the high-power microwave damage threshold power that causes damage to the test target board; Step 5: Starting from a first preset value lower than the high-power microwave damage threshold power, selecting a second solar cell panel as a new test target panel, and repeating the test process from step 3 to step 4 to test the test target panel until it is determined that the second solar cell panel reaches the high-power microwave damage threshold power; Step 6: Determine whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, so as to determine whether there is a cumulative effect in the test process of the test target panel; Step 7: If there is an accumulation effect, the third solar cell panel is selected as a new test target, and starting from a second preset value of the high-power microwave damage threshold power lower than the second solar cell panel, the test process of steps 3 to 4 is repeated to test the test target panel until it is determined that the third solar cell panel reaches the high-power microwave damage threshold power, and the high-power microwave damage threshold power without the accumulation effect is obtained.

2. The testing method according to claim 1, characterized in that: The test platform includes: a radio frequency signal source, an isolator, a power amplifier, an adjustable attenuator, a circulator, a load, a first power meter, a directional coupler, a light source, a thermal imager, an attenuator and a second power meter; The radio frequency signal is connected to the isolator and is used to transmit the continuous high-frequency sinusoidal signal generated by itself to the power amplifier through the isolator; The isolator is used to isolate and protect the reflected wave and the echo from damaging the test target board and the radio frequency signal source; The power amplifier is used to amplify the power of the continuous high-frequency sinusoidal signal to simulate the high-power microwave in the real environment and output it to the adjustable attenuator; The adjustable attenuator is used to control the output power of the high-power microwave to increase in sequence according to a preset step; The circulator is used to isolate and protect the reflected waves and echoes from damaging other devices; The load is used to provide an output circuit for the circulator; The directional coupler is used to control the test power range of the high-power microwave of the first power meter to prevent the high-power microwave from damaging the first power meter; The light source is used to provide the solar panel with the same lighting as in the real environment; The first power meter is used to monitor the input power injected into the solar panel by the directional coupler each time; The attenuator is used to control the test power range of the second power meter for testing the output power of the solar panel, so as to prevent the high-power microwave from damaging the second power meter; The thermal imager is used to monitor the temperature of the solar panel each time a high-power microwave is injected.

3. The testing method according to claim 1, characterized in that: The step 6 comprises: It is determined whether the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same. If the high-power microwave damage threshold powers of the first solar panel and the second solar panel are the same, there is no accumulation effect on the test process of the test target panel; if they are not the same, there is an accumulation effect on the test process of the test target panel.

4. The testing method according to claim 1, characterized in that: After step 6, the testing method further includes: If there is no accumulation effect, the injected power causing damage to the second solar cell panel is determined as the high power microwave damage threshold power.

5. The testing method according to claim 1, characterized in that: After step 7, the testing method further includes: Slicing at least one of the lost plurality of solar panels; The position of the maximum temperature point in the section is assisted in positioning to determine the vulnerable point of the solar panel.

6. The testing method according to claim 5, characterized in that: The auxiliary positioning of the maximum temperature point in the section to determine the vulnerable point of the solar panel includes: Use a thermal imager to assist in locating the maximum temperature point in the slice; At the location of the maximum temperature point of the slice, the electron microscope observes the damage morphology of the slice to determine the vulnerable point of the solar panel.

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