Device and method for transporting a grain in a soldering apparatus, soldering apparatus

Abstract

Embodiments of the present invention provide an apparatus and a method for transferring a semiconductor die in a die bonder, and a die bonder. The apparatus for transferring a semiconductor die in a die bonder includes a pusher, a pusher control section, a gas flow section, a gas flow control section, a tape suction section, a picker, and a picker control section. The picker control section can lower the picker to contact an upper end of the die, the pusher control section and the picker control section can raise the pusher and the picker by a first height, the picker control section can raise the picker by a second height in a state where a vacuum pressure is applied downward by the gas flow control section, and the gas flow control section can apply an air pressure upward in a state where the picker is separated from the pusher.

Description

TECHNICAL FIELD

[0001] The present invention relates to an apparatus and a method for transferring a die in a die bonding apparatus, and more particularly, to an apparatus and a method capable of efficiently transferring a die having a thin thickness. BACKGROUND

[0002] A semiconductor manufacturing process, as a process of manufacturing a semiconductor element on a wafer, includes, for example, exposure, evaporation, etching, ion implantation, cleaning, etc. A die, which is constituted in a chip unit, can be subjected to a process of bonding each die to a substrate (example: PCB (Printed Circuit Board)) for packaging through a semiconductor manufacturing process.

[0003] Each die is transferred in a state of being attached to a dicing tape by being pushed up by a pusher and being adhered by a picker. On the other hand, as the thickness of the die becomes very thin, a scheme for picking up the die while minimizing the impact applied to the die is being studied. SUMMARY

[0004] Therefore, an embodiment of the present invention provides an apparatus and a method capable of efficiently transferring a die having a thin thickness.

[0005] The problems to be solved by the present invention are not limited to the above-mentioned, and other problems to be solved not mentioned can be clearly understood by those skilled in the art from the following description.

[0006] The apparatus for transferring a die in a semiconductor die bonding apparatus according to an embodiment of the present invention includes a pusher that pushes up a die attached to a dicing tape from below, a pusher control portion that controls the rising or lowering of the pusher, a gas flow portion that is located inside the pusher and forms a flow path of a gas for applying a vacuum pressure, a gas flow control portion that controls the vacuum pressure to be applied through the gas flow portion, a tape suction portion that is located outside the pusher and suctions the dicing tape using a vacuum pressure, a picker that suctions and transfers the die from above, and a picker control portion that controls the lifting drive of the picker. The picker control portion lowers the picker so that the picker contacts the upper end of the die, and the pusher control portion and the picker control portion raise the pusher and the picker by a first height in a state in which the picker contacts the upper end of the die, and the picker control portion raises the picker by a second height in a state in which the vacuum pressure is applied downward by the gas flow control portion.

[0007] In an embodiment, the gas flow portion can form a path for applying an air pressure to the die, the gas flow control portion can control the air pressure to be applied through the gas flow portion, and the air pressure can be applied upward in a state in which the picker is spaced apart from the pusher.

[0008] In one embodiment, the airflow control section can be controlled to apply a vacuum pressure downward during descent of the pickup.

[0009] In one embodiment, the airflow control section can be controlled to release the vacuum pressure when the pickup contacts the upper end of the die.

[0010] In one embodiment, the airflow control section can be controlled to apply a vacuum pressure downward during ascent of the pusher and the pickup by the first height.

[0011] In one embodiment, the pusher can include a first pusher formed to surround the gas flow section, and a second pusher formed to surround the first pusher.

[0012] In one embodiment, the pusher control section can individually control ascent of the first pusher and the second pusher.

[0013] In one embodiment, the pickup control section can control the pickup to ascend together with an upper-end pusher among the first pusher and the second pusher during contact and ascent of the pickup to the upper end of the die.

[0014] In one embodiment, the pusher control section can cause the first pusher and the second pusher to ascend by the first height, and cause the second pusher to descend to an intermediate position of the first height in a state where the first pusher is fixed.

[0015] In one embodiment, the pusher control section can cause the first pusher and the second pusher to ascend to an intermediate position of the first height, and cause the first pusher to ascend in a state where the second pusher is fixed at the intermediate position.

[0016] In one embodiment, the first height and the second height can be set to be different from each other.

[0017] In one embodiment, the second height can be set to be smaller than the first height.

[0018] A method for transferring a wafer in a semiconductor wafer bonding apparatus according to an embodiment of the present application includes the steps of: positioning a wafer attached to a dicing tape above a pusher; lowering a picker to contact an upper end of the wafer; raising the pusher and the picker by a first height while the picker is in contact with the upper end of the wafer; raising the picker by a second height while a vacuum pressure is applied downward; and applying an air pressure upward while the picker is separated from the pusher.

[0019] In an embodiment, the step of lowering the picker can include the step of applying a vacuum pressure downward during the lowering of the picker.

[0020] In an embodiment, the step of lowering the picker can include the step of releasing the vacuum pressure when the picker contacts the upper end of the wafer.

[0021] In an embodiment, the pusher can include a first pusher formed to surround a gas flow portion to which the vacuum pressure or the air pressure is applied and a second pusher formed to surround the first pusher, and the step of raising the pusher and the picker by the first height can include the step of controlling the picker to be raised together with a pusher located at an upper end among the first pusher and the second pusher.

[0022] In an embodiment, the step of raising the pusher and the picker by the first height can include the steps of raising the first pusher and the second pusher to an intermediate position of the first height, and raising the first pusher while the second pusher is fixed at the intermediate position.

[0023] In an embodiment, the step of raising the pusher and the picker by the first height can include the steps of raising the first pusher and the second pusher by the first height, and lowering the second pusher to an intermediate position of the first height while the first pusher is fixed.

[0024] A semiconductor bonding apparatus according to an embodiment of the present application includes a wafer stage supporting a wafer having individualized dies and selectively separating the dies, a die transfer unit transferring the dies from the wafer stage, a die stage on which the dies transferred by the die transfer unit are placed and on which inspection of the dies is performed, a bonding unit picking up the dies from the die stage and bonding the dies on a substrate, and a bonding stage supporting the substrate and delivering the substrate on which bonding is completed to a magazine. The wafer stage includes a pusher elevating the dies attached to a dicing tape upward, a pusher control section controlling the pusher to be raised or lowered, a gas flow section located inside the pusher and forming a flow path of gas to which vacuum pressure or air pressure is applied, a gas flow control section controlling the vacuum pressure or the air pressure applied through the gas flow section, and a tape suction section located outside the pusher and suctioning the dicing tape using vacuum pressure. The die transfer unit includes a picker suctioning and transferring the dies upward, and a picker control section controlling the picker to be driven to be raised or lowered. The picker control section lowers the picker so that the picker contacts an upper end of the die, the gas flow control section controls the vacuum pressure to be applied downward during the lowering of the picker, the pusher control section and the picker control section raise the pusher and the picker by a first height in a state where the picker contacts the upper end of the die and the vacuum pressure is applied downward by the gas flow control section, the picker control section raises the picker by a second height in a state where the vacuum pressure is applied downward by the gas flow control section, and the gas flow control section applies air pressure upward to the die in a state where the picker is separated from the pusher so that the die is suctioned to the picker.

[0025] According to an embodiment of the present application, the die is peeled from the dicing tape in a state where the die contacts the pusher and the picker at the beginning, and then the die is picked up in a non-contact manner in a state where the die is separated from the picker, so that the die can be picked up while preventing damage to the die.

[0026] Effects of the present application are not limited to the above-mentioned, and other effects not mentioned can be clearly understood by those skilled in the art from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 An outline structure of a bonding apparatus according to an embodiment of the present application is shown.

[0028] Figure 2 An outline structure of a device for transferring a die in a bonding apparatus according to an embodiment of the present application is shown.

[0029] Figure 3 A sectional view of a pusher according to an embodiment of the present application is shown.

[0030] Figure 4a and Figure 4b A block diagram of an apparatus for transferring a die according to an embodiment of the present application is shown.

[0031] Figure 5 An example of a process for transferring a die according to an embodiment of the present application is shown.

[0032] Figure 6 and Figure 7 A process for transferring a die according to an embodiment of the present application is shown.

[0033] Figure 8 is a cross-sectional view of a pusher according to another embodiment of the present application.

[0034] Figure 9 and Figure 10 A process for transferring a die according to another embodiment of the present application is shown.

[0035] Figure 11 A process for transferring a die according to yet another embodiment of the present application is shown.

[0036] Figure 12 is a flowchart of a method for transferring a die according to an embodiment of the present application. DETAILED DESCRIPTION

[0037] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings so as to be easily practiced by those having ordinary knowledge in the art to which the present application pertains. The present application can be realized in various different ways, and is not limited to the embodiments described herein.

[0038] In order to clearly explain the present application, parts irrelevant to the explanation are omitted, and the same reference numerals are assigned to the same or similar constituent elements throughout the specification.

[0039] In addition, in the plurality of embodiments, the same reference numerals are used to only explain representative embodiments with respect to the constituent elements having the same structure, and only the structure different from the representative embodiments is explained in the remaining other embodiments.

[0040] In the specification, when it is expressed that a certain part is "connected" (or "coupled") to another part, it is not only the case of "directly connected" (or "directly coupled") but also the case of "indirectly connected" (or "indirectly coupled") with other parts interposed therebetween. In addition, when it is expressed that a certain part "includes" a certain constituent element, it means that other constituent elements can be further included, not excluding other constituent elements, unless otherwise specifically noted.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0042] Figure 1 A schematic configuration of a bonding apparatus 100 according to an embodiment of the present application is shown, Figure 2 A schematic configuration of an apparatus for transferring a die 20 in the bonding apparatus 100 according to an embodiment of the present application is shown. The bonding apparatus 100 can be used in a die bonding process for manufacturing a semiconductor package to bond the die 20 on a substrate 30 (e.g., a PCB, a lead frame).

[0043] The bonding apparatus 100 according to an embodiment of the present application includes a wafer stage 110 that supports a wafer 10 provided with singulated dies 20 and selectively separates the dies 20, a die transfer unit 120 that transfers the dies 20 from the wafer stage 110, a die stage 124 that receives the dies 20 transferred by the die transfer unit 120 and performs inspection on the dies 20, a bonding unit 130 that picks up the dies 20 from the die stage 124 and bonds the dies 20 on the substrate 30, and a bonding stage 200 that supports the substrate 30 and delivers the substrate 30 on which bonding is completed to a magazine 42.

[0044] The bonding apparatus 100 can bond the dies 20 on the substrate 30 by picking up the dies 20 from the wafer 10 provided with the singulated dies 20 through a dicing process. The wafer 10 can be provided in a state of being attached to a dicing tape 12, and the dicing tape 12 can be mounted to a substantially circular mounting frame 14. A wafer cassette 50 in which a plurality of wafers 10 are accommodated is dropped from a load port 102. A wafer transfer unit 104 takes out the wafer 10 from the wafer cassette 50 and loads the wafer 10 on the wafer stage 110, and the wafer transfer unit 104 can move along a guide rail 106 provided between the wafer cassette 50 and the wafer stage 110.

[0045] A dishing ring 112 in a circular shape can be disposed on the wafer stage 110, and the dishing ring 112 can support an edge portion of the dicing tape 12. In addition, a clamp 114 for clamping the mounting frame 14 and a clamp driving part (not shown) for expanding the dicing tape 12 by lowering the clamp 114 in a state in which the dicing tape 12 is supported by the dishing ring 112 can be disposed on the wafer stage 110.

[0046] A push unit 116 for selectively separating the dies 20 can be disposed below the wafer 10 supported on the wafer stage 110. According to an embodiment of the present application, as Figure 3 andFigure 4a The pusher unit 116 shown includes a pusher 1161 that pushes up the dies 20 attached to the cutting tape 12 from below, a pusher control section 1162 that controls the raising or lowering of the pusher 1161, a gas flow section 1163 that is located inside the pusher 1161 and forms a flow path for a gas to which a vacuum pressure is applied, a gas flow control section 1164 that controls the vacuum pressure to be applied through the gas flow section 1163, and a tape suction section 1165 that is located outside the pusher 1161 and suctions the cutting tape 12. Also, the gas flow section 1163 can form a path for applying an air pressure to the dies 20, and the gas flow control section 1164 can control the air pressure to be applied through the gas flow section 1163.

[0047] Referring to Figure 3 , the gas flow section 1163 is located at the center of the pusher unit 116 and suctions or discharges a gas, so that a vacuum pressure or an air pressure can be applied to the cutting tape 12 and the dies 20. Although not shown, the gas flow section can be connected to a suction pipe for suctioning a gas and a discharge pipe for discharging a gas, respectively. In addition, a suction valve that controls the flow of a gas inside the suction pipe and a discharge valve that controls the flow of a gas inside the discharge pipe can be provided, and a suction switch that controls the suction valve and a discharge switch that controls the discharge valve can be provided. The gas flow control section 1164 can control the suctioning of a gas through the gas flow section 1163 to apply a vacuum pressure or the discharging of a gas to apply an air pressure, by controlling the on / off of the suction switch or the discharge switch.

[0048] In addition, the pusher 1161 that surrounds the periphery of the gas flow section 1163 and pushes up the dies 20 is provided. The pusher 1161 can be formed of a body having a certain rigidity and can be raised or lowered by a driving section (not shown) such as a linear motor. The pusher control section 1162 can raise or lower the pusher by controlling the driving section for the raising or lowering of the pusher 1161.

[0049] In addition, as Figure 3 and Figure 4bAs shown, the die transfer unit 120 includes a picker 121 that picks up the die 20 and transfers it, and a picker control section 122 that controls the lift drive of the picker 121. The picker 121 can have a hole for applying vacuum pressure formed in the peripheral portion thereof for picking up the die 20. The die 20 can be sucked to the picker 121 by the vacuum pressure applied to the peripheral portion of the picker 121. On the other hand, the picker 121 can be lift-driven by a lift drive section, and can be moved in the horizontal direction by another driving means to transfer the die 20. The picker control section 122 for controlling the lift drive of the picker 121 is provided, and the lift drive and the lift height of the picker 121 can be controlled.

[0050] Although not shown, the wafer stage 110 can be configured to be movable in the horizontal direction by a stage drive section (not shown) that can move the wafer stage 110 to a wafer loading / unloading area (indicated by a dashed line) adjacent to the end portion of the guide rail 106 for loading and unloading the wafer 10. Figure 1 In addition, the stage drive section can move the wafer stage 110 for selectively picking up the die 20. That is, the stage drive section can adjust the position of the wafer stage 110 so that the die 20 to be picked up is positioned above the push unit 116.

[0051] The die 20 separated by the push unit 116 can be picked up by the die transfer unit 120 disposed above the wafer stage 110. The die transfer unit 120 can transfer the die 20 picked up to a die stage 124 disposed at one side of the wafer stage 110, and the die 20 on the die stage 124 can be picked up by the soldering unit 130 and soldered to the substrate 30. To this end, the picker 121 can be configured to be movable in the vertical and horizontal directions.

[0052] The substrate 30 can be taken out from the first magazine 40 and transferred to the soldering stage 200, and can be transferred and housed in the second magazine 42 after the soldering process is completed. The soldering apparatus 100 can include a substrate transfer unit 140 for transferring the substrate 30 to the soldering stage 200. For example, the substrate transfer unit 140 can include a guide rail 142 for guiding the substrate 30 between the first magazine 40, the soldering stage 200, and the second magazine 42, a gripper 144 for gripping one side end portion of the substrate 30, and a gripper drive section 146 for moving the gripper 144 in the horizontal direction (X-axis direction). The gripper drive section 146 can load the substrate 30 onto the soldering stage 200 by moving the gripper 144 after gripping one side end portion of the substrate 30 by the gripper 144. Although not shown, the substrate transfer unit 140 can further include a second gripper (not shown) for moving the substrate 30 to the second magazine 42 after the soldering process is completed.

[0053] The welding apparatus 100 may include: a first head drive unit 132 for vertically moving a welding unit 130 to pick up a die 20 from a die stage 124 and weld it to a substrate 30; and a second head drive unit 134 for moving the welding unit 130 in a second horizontal direction (e.g., the Y-axis direction) perpendicular to the horizontal direction between the die stage 124 and the welding stage 200. Although not shown in detail, the welding unit 130 may include a welding tool for picking up the die 20 using vacuum pressure and a heater for heating the die 20. That is, the welding unit 130 can pick up the die 20 from the die stage 124 and weld it to the substrate 30. Alternatively, the welding unit 130 can also pick up the die 20 from the wafer 10 and weld it directly to the substrate 30.

[0054] On the other hand, above the soldering station 200, a camera can be configured to capture reference marks on the substrate 30 and the area where the die 20 is to be soldered, for position adjustment, i.e., alignment, of the substrate 30. Additionally, although not shown, the soldering equipment 100 may include multiple cameras for detecting the die 20 on the wafer 10, detecting the die 20 on the die stage 124, and detecting the die 20 picked up by the soldering unit 130.

[0055] The following describes an apparatus and method for picking up a die according to an embodiment of the present invention. With the miniaturization of electronic devices, the thickness of the wafer 10 and the die 20 has also become thinner. In the case of a thin die 20, damage may occur when it is pushed by the pusher 1161 and picked up by the picker 121.

[0056] Therefore, the following method can be used: while the die 20 is pushed by the pusher 1161 and the picker 121 is separated from the die 20 by a certain distance without contact, the die 20 is pushed by the air pressure from the gas flow section 1163 and picked up in a non-contact manner.

[0057] Reference Figure 5 First, the pusher 1161 rises and falls from its initial position to be close to the bottom of the die 20, and the picker 121 is positioned above it to pick up the die 20. Figure 5 (a)). Afterwards, the pickup 121 stops at a distance from the die 20. Figure 5 (b) The pusher 1161 rises and falls to a certain height to push the die 20, and peels the die 20 off the wafer in one step. Figure 5 (c)). Here, there is a certain gap between the die 20 and the pickup 121, and they are in a non-contact state. In this state, a vacuum pressure is applied downwards, and the cutting tape 12 is pressed tightly against the pusher 1161, thereby peeling the die 20 from the cutting tape 12 twice. Figure 5(d)). Then, air pressure is applied from above, and the grain 20 is completely peeled off from the cutting tape 12 and adsorbed onto the pickup 121. Figure 5 (e)). Afterwards, the pickup 121 may rise to transfer the die 20, and the pusher 1161 may descend to its initial position. Figure 5 (f)

[0058] On the other hand, as the grains 20 become thinner (less than 30µm), the thinner grains 20 warp and cannot be peeled off from the cutting tape 12, potentially causing the grains 20 to fail to be picked up. For example, in the case of very thin grains 20, the weight is too light, and when warping occurs, even... Figure 5 In step (d), a vacuum pressure is applied downwards, and the cutting tape 12 may not be able to adhere completely to the pusher 1161 due to the floating of the grains 20, and may not be able to peel off.

[0059] Therefore, embodiments of the present invention provide an apparatus and method capable of successfully picking up the die 20 while suppressing damage to the die 20. According to an embodiment of the present invention, initially, with the pickup 121 descending and contacting the die 20, the pickup 121 and the pusher 1161 are simultaneously raised and lowered to peel the die 20 from the cutting tape 12. Then, with the pickup 121 rising and falling without contacting the die 20, gas pressure is used to pick up the die 20 through the pickup 121. Hereinafter, an apparatus and method for picking up a die according to an embodiment of the present invention will be described in detail.

[0060] Figure 6 as well as Figure 7 The process for picking up the grain 20 according to an embodiment of the present invention is shown. Figure 6 The positions of the pusher 1161 and the pickup 121, as well as the gas flow direction, are shown when picking up grain 20. Figure 7 Show Figure 6 The height of the pusher 1161 and the pickup 121 in each step.

[0061] According to an embodiment of the present invention, the pickup control unit 122 lowers the pickup 121 so that the pickup 121 contacts the upper end of the die 20. (See also...) Figure 6 as well as Figure 7 In step (a), the pickup 121 descends to pick up the die 20. Simultaneously, the pusher 1161 can rise and fall from its initial position to lie directly beneath the die 20. Furthermore, the airflow control unit 1164 controls the airflow to apply a vacuum pressure downwards during the descent of the pickup 121. By applying this vacuum pressure downwards, the warped die 20 is straightened and flattened, thereby preventing pickup failures caused by the warping of the die 20.

[0062] exist Figure 6 as well as Figure 7 In step (b), the pickup 121 contacts the upper end of the die 20, and the pickup 121 stops in the state of contacting the die 20. Here, the airflow control unit 1164 can be controlled to release the vacuum pressure when the pickup 121 contacts the upper end of the die 20.

[0063] After that, as Figure 6 as well as Figure 7 As in step (c), with the pickup 121 in contact with the upper end of the die 20, the pusher control unit 1162 and the pickup control unit 122 raise the pusher 1161 and the pickup 121 to a first height h1. Here, the airflow control unit 1164 can control the application of a vacuum pressure downwards during the period when the pusher 1161 and the pickup 121 rise to the first height h1. By raising the die 20 with it in contact with the pickup 121, the die 20 can be peeled off from the cutting tape 12 in one go. Since the die 20 rises in a flat state, the die 20 can be effectively peeled off without the cutting tape 12 floating.

[0064] In one embodiment, the first height h1 and the second height h2 can be set to be different from each other. Here, the second height h2 can be set to be smaller than the first height h1. The second height h2 is the height at which the dicing tape 12 expands upward by air pressure, causing the dicing 20 to be adsorbed onto the pickup 121. Therefore, the second height h2 needs to be set to be smaller than the first height h1 to facilitate the adsorption of the dicing 20. However, it can be set differently according to the user's intention, or according to the embodiment, the second height h2 can be set to be greater than the first height h1.

[0065] After that, as Figure 6 as well as Figure 7 As in step (d), with a vacuum pressure applied downwards by the airflow control unit 1164, the pickup control unit 122 raises the pickup 121 to a second height h2. That is, the pickup 121 is separated from the pusher 1161 by a certain distance. During the rising step of the die 20, when the die 20 is completely peeled off from the cutting tape 12, the die 20 will be adsorbed onto the pickup 121.

[0066] However, depending on the situation, the grain 20 may not be completely peeled off from the cutting tape 12, therefore it may be necessary to additionally use the same method as the non-contact pickup. Figure 6 as well as Figure 7As in step (e) of FIG. 10, the gas flow control section 1164 applies air pressure upward to the pick-up 121 in a state where the pick-up 121 is separated from the pusher 1161, and the wafer 20 is adsorbed to the pick-up 121. Thus, the wafer 20 can be completely separated from the dicing tape 12 and adsorbed to the pick-up 121. After that, as in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position. Figure 8 As in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position. Figure 9 As in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position.

[0067] On the other hand, according to another embodiment of the present application, the pusher 1161 can be provided as a plurality of unit pushers. That is, the pusher 1161 can be configured in a plurality of stages. For example, as in step (e) of FIG. 10, the pusher 1161 can include a first pusher 1161A formed to surround the gas flow section 1163, and a second pusher 1161B formed to surround the first pusher 1161A. Figure 10 As in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position.

[0068] The pusher control section 1162 can individually control the raising and lowering of the first pusher 1161A and the second pusher 1161B, and thus can enable time / spatial multi-stage driving of the pusher 1161. On the other hand, when the pusher 1161 is configured as a single unit pusher, time multi-stage driving can also be enabled.

[0069] In this case, the pick-up control section 122 can control the pick-up 121 to be raised together with the pusher located at the upper end among the first pusher 1161A and the second pusher 1161B during a period in which the pick-up 121 is raised while contacting the upper end of the wafer 20.

[0070] Figure 9 As in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position. Figure 10 A process for picking up the wafer 20 according to another embodiment of the present application is shown. Figure 9 The positions of the pusher 1161 and the pick-up 121 and the flow direction of the gas when picking up the wafer 20 are shown, Figure 9 The heights of the pusher 1161 and the pick-up 121 in each step of FIG. 10 are shown. Figure 10 The heights of the pusher 1161 and the pick-up 121 in each step of FIG. 10 are shown.

[0071] According to an embodiment of the present application, the pick-up control section 122 lowers the pick-up 121 so that the pick-up 121 contacts the upper end of the wafer 20. Referring to Figure 9 As in step (f) of FIG. 10, the pick-up 121 can be raised to transfer the wafer 20, and the pusher 1161 can be lowered to return to the initial position. Figure 10In step (a) of FIG. 1, the picker 121 is lowered for picking up the die 20. At the same time, the first pusher 1161A and the second pusher 1161B can be raised from the initial position together to be close to the lower side of the die 20. In addition, the airflow control section 1164 is controlled to apply vacuum pressure downward during the lowering of the picker 121. By applying vacuum pressure downward, the warped die 20 is stretched flat, so that picking failure due to warping of the die 20 can be prevented.

[0072] In step (b) of FIG. 1, the picker 121 contacts the upper end of the die 20, and the picker 121 is stopped in the state of contacting the die 20. At this time, the airflow control section 1164 can be controlled to release vacuum pressure when the picker 121 contacts the upper end of the die 20. Figure 9 Figure 10 In step (c) of FIG. 1, the picker control section 122 raises the picker 121 to the intermediate position of the first height hi in the state where the picker 121 contacts the upper end of the die 20. At this time, the airflow control section 1164 can be controlled to apply vacuum pressure downward during the raising of the picker 121 to the intermediate position of the first height hi.

[0073] After that, as in step (d) of FIG. 1, the picker control section 122 raises the picker 121 by the second height h2 in the state where vacuum pressure is applied downward by the airflow control section 1164. That is, the picker 121 is separated from the first pusher 1161A by a certain distance. In the raising step of the picker 121, when the die 20 is completely peeled from the dicing tape 12, the die 20 will be adsorbed to the picker 121. Figure 9 Figure 10 In step (c) of FIG. 1, the picker control section 122 raises the picker 121 to the intermediate position of the first height hi in the state where the picker 121 contacts the upper end of the die 20. At this time, the airflow control section 1164 can be controlled to apply vacuum pressure downward during the raising of the picker 121 to the intermediate position of the first height hi.

[0074] In addition, as in step (c) of FIG. 1, the first pusher 1161A can be raised in the state where the second pusher 1161B is fixed at the intermediate position. At this time, the airflow control section 1164 can be controlled to apply vacuum pressure downward during the raising of the first pusher 1161A and the picker 121. Figure 9 Figure 10 According to the present embodiment, by raising the first pusher 1161A and the second pusher 1161B stage by stage, the die 20 can be sequentially peeled from the dicing tape 12 from the outside, so that the die 20 can be more effectively peeled.

[0075] After that, as in step (d) of FIG. 1, the picker control section 122 raises the picker 121 by the second height h2 in the state where vacuum pressure is applied downward by the airflow control section 1164. That is, the picker 121 is separated from the first pusher 1161A by a certain distance. In the raising step of the picker 121, when the die 20 is completely peeled from the dicing tape 12, the die 20 will be adsorbed to the picker 121.

[0076] After that, as in step (d) of FIG. 1, the picker control section 122 raises the picker 121 by the second height h2 in the state where vacuum pressure is applied downward by the airflow control section 1164. That is, the picker 121 is separated from the first pusher 1161A by a certain distance. In the raising step of the picker 121, when the die 20 is completely peeled from the dicing tape 12, the die 20 will be adsorbed to the picker 121. Figure 9 Figure 10 After that, as in step (d) of FIG. 1, the picker control section 122 raises the picker 121 by the second height h2 in the state where vacuum pressure is applied downward by the airflow control section 1164. That is, the picker 121 is separated from the first pusher 1161A by a certain distance. In the raising step of the picker 121, when the die 20 is completely peeled from the dicing tape 12, the die 20 will be adsorbed to the picker 121.​​​​

[0077] Likewise, as in step (e) of Figure 11 and Figure 11 step (a), the picker 121 is lowered in order to pick up the die 20. At the same time, the first pusher 1161A and the second pusher 1161B can be raised together from the initial position to be close to the lower side of the die 20. In addition, the airflow control section 1164 is controlled to apply vacuum pressure downward during the lowering of the picker 121. By applying vacuum pressure downward, the warped die 20 is stretched flat, so that picking failure due to warping of the die 20 can be prevented.

[0078] On the other hand, according to another embodiment of the present application, the first pusher 1161A and the second pusher 1161B are raised by the first height h1 at the same time, and then the second pusher 1161B on the outer side is lowered, so that the die 20 can be peeled off from the outer side of the dicing tape 12 in order.

[0079] Figure 11 A process for picking up the die 20 according to still another embodiment of the present application is shown.

[0080] According to an embodiment of the present application, the picker control section 122 lowers the picker 121 so that the picker 121 contacts the upper end of the die 20. Referring to Figure 11 step (a), the picker 121 is lowered in order to pick up the die 20. At the same time, the first pusher 1161A and the second pusher 1161B can be raised together from the initial position to be close to the lower side of the die 20. In addition, the airflow control section 1164 is controlled to apply vacuum pressure downward during the lowering of the picker 121. By applying vacuum pressure downward, the warped die 20 is stretched flat, so that picking failure due to warping of the die 20 can be prevented.

[0081] In Figure 11 step (b), the picker 121 contacts the upper end of the die 20, and the picker 121 is stopped in the state of contacting the die 20. At this time, the airflow control section 1164 can be controlled to release the vacuum pressure when the picker 121 contacts the upper end of the die 20.

[0082] After that, as in step (c) of Figure 11 with the picker 121 contacting the upper end of the die 20, the pusher control section 1162 and the picker control section 122 raise the first pusher 1161A, the second pusher 1161B, and the picker 121 by the first height. At this time, the airflow control section 1164 can be controlled to apply vacuum pressure downward during the raising of the first pusher 1161A, the second pusher 1161B, and the picker 121 by the first height h1.

[0083] In addition, asFigure 12 As in step (c) of the above embodiment, the second pusher 1161B can be lowered to an intermediate position of the first height hi while the first pusher 1161A is fixed. Also, in this case, the airflow control section 1164 can be controlled to apply the vacuum pressure downward during the lowering of the second pusher 1161B.

[0084] According to the present embodiment, by causing the first pusher 1161A and the second pusher 1161B to be raised together and then causing the outer second pusher 1161B to be lowered, the dies 20 can be sequentially peeled from the dicing tape 12 from the outside, and thus the dies 20 can be more efficiently peeled.

[0085] After that, as in step (d) of the above embodiment, the pickup 121 is raised by the second height h2 while the vacuum pressure is applied downward by the airflow control section 1164. That is, the pickup 121 is separated from the first pusher 1161A by a certain distance. In the raising step of the pickup 121, when the die 20 is completely peeled from the dicing tape 12, the die 20 will be adsorbed to the pickup 121. Figure 12 Also, the airflow control section 1164 applies the air pressure upward to adsorb the die 20 to the pickup 121 while the pickup 121 is separated from the first pusher 1161A. Thus, the die 20 can be completely separated from the dicing tape 12 and adsorbed to the pickup 121. After that, the pickup 121 can be raised to transfer the die 20, and the pusher 1161 can be lowered to return to the initial position.

[0086]

[0087] is a flowchart of a method for transferring a die 20 according to an embodiment of the present application. ​ Each of the operations of the above embodiment can be controlled by each control section or processor and performed by each module of the soldering apparatus 100. ​

[0088] A method for transferring a die 20 according to an embodiment of the present application includes: a step of causing a die 20 in a state of being attached to a dicing tape 12 to be positioned above a pusher 1161 (S1205); a step of lowering a pickup 121 to contact an upper end of the die 20 (S1210); a step of raising the pusher 1161 and the pickup 121 by a first height hi while the pickup 121 contacts the upper end of the die 20 (S1215); a step of raising the pickup 121 by a second height h2 while a vacuum pressure is applied downward (S1220); and a step of applying an air pressure upward to adsorb the die 20 to the pickup 121 while the pickup 121 is separated from the pusher 1161 (S1225). ​

[0089] In one embodiment, the step of lowering the pickup 121 (S1210) can include a step of applying a vacuum pressure downward during the lowering of the pickup 121.

[0090] In one embodiment, the step of lowering the pickup 121 (S1210) can include a step of releasing the vacuum pressure when the pickup 121 contacts the upper end of the die 20.

[0091] In one embodiment, the step of raising the pusher 1161 and the pickup 121 (S1215) can include a step of applying a vacuum pressure downward during the raising of the pusher 1161 and the pickup 121 by a first height hi.

[0092] In one embodiment, the pusher 1161 includes a first pusher 1161A formed to surround a gas flow portion 1163 to which a vacuum pressure or an air pressure is applied, and a second pusher 1161B formed to surround the first pusher 1161A, and the step of raising the pusher 1161 and the pickup 121 by the first height hi (S1215) can include a step of controlling the pickup 121 to be raised together with the pusher located at the upper end among the first pusher 1161A and the second pusher 1161B.

[0093] The step of raising the pusher 1161 and the pickup 121 (S1215) can include a step of raising the first pusher 1161A and the second pusher 1161B to an intermediate position of the first height hi, and a step of raising the first pusher 1161A in a state that the second pusher 1161B is fixed at the intermediate position.

[0094] The step of raising the pusher 1161 and the pickup 121 (S1215) can include a step of raising the first pusher 1161A and the second pusher 1161B by the first height hi, and a step of lowering the second pusher 1161B to an intermediate position of the first height hi in a state that the first pusher 1161A is fixed.

[0095] The present embodiment and the accompanying drawings of the present specification merely explicitly indicate a part of the technical idea included in the present invention, and it is obvious that modifications and embodiments which can be easily derived by those skilled in the art within the scope of the technical idea included in the specification and the drawings of the present invention are included in the scope of the rights of the present invention.

[0096] Therefore, the concept of the present invention should not be limited to the described embodiments, and all concepts which are equivalent or equivalent modifications of the appended claims are included in the scope of the concept of the present invention.

Claims

1. An apparatus for transferring a die in a bonding apparatus, the apparatus comprising: a pusher that pushes up a die attached to a dicing tape from below; a pusher control section that controls the rising or lowering of the pusher; a gas flow section that is located inside the pusher and forms a flow path of gas for applying a vacuum pressure; a gas flow control section that controls the application of the vacuum pressure through the gas flow section; a tape suction section that is located outside the pusher and suctions the dicing tape using a vacuum pressure; a picker that suctions and transfers the die from above; and a picker control section that controls the raising and lowering drive of the picker, the picker control section lowers the picker so that the picker contacts an upper end of the die, in a state where the picker contacts the upper end of the die, the pusher control section and the picker control section raise the pusher and the picker by a first height, in a state where the vacuum pressure is applied downward by the gas flow control section, the picker control section raises the picker by a second height, the gas flow section forms a path for applying an air pressure to the die, the gas flow control section controls the application of the air pressure through the gas flow section and applies the air pressure upward in a state where the picker is raised by the second height to be separated from the pusher.

2. The apparatus according to claim 1, wherein the gas flow control section controls the application of the vacuum pressure downward during the lowering of the picker.

3. The apparatus according to claim 1, wherein the gas flow control section controls the application of the vacuum pressure downward during the raising of the pusher and the picker by the first height.

4. The apparatus according to claim 1, wherein the pusher includes: a first pusher formed to surround the gas flow section; and a second pusher formed to surround the first pusher.

5. The apparatus according to claim 4, wherein the picker control section controls the picker to be raised together with the pusher located at the upper end among the first pusher and the second pusher during the contact of the picker to the upper end of the die and the raising of the picker.

6. The apparatus according to claim 5, wherein the pusher control section raises the first pusher and the second pusher by the first height and lowers the second pusher to an intermediate position of the first height in a state where the first pusher is fixed.

7. The apparatus according to claim 5, wherein the pusher control section raises the first pusher and the second pusher to an intermediate position of the first height and raises the first pusher in a state where the second pusher is fixed at the intermediate position.

8. The apparatus according to claim 1, wherein the first height and the second height are set to be different from each other.

9. The apparatus according to claim 1, wherein the second height is set to be smaller than the first height.

10. A method for transferring a die in a die bonder, the method comprising: a step of positioning a die attached to a state of a dicing tape above a pusher; a step of lowering a picker to contact an upper end of the die; a step of raising the pusher and the picker by a first height in a state where the picker contacts the upper end of the die; and a step of raising the picker by a second height in a state where a vacuum pressure is applied below the pusher, the step of raising the picker includes a step of applying an air pressure upward in a state where the picker is raised by the second height to be spaced apart from the pusher.

11. The method according to claim 10, wherein the step of lowering the picker includes a step of applying a vacuum pressure downward during the lowering of the picker.

12. The method according to claim 10, wherein the step of raising the pusher and the picker includes a step of applying a vacuum pressure downward during the raising of the pusher and the picker by the first height.

13. The method according to claim 10, wherein the pusher includes a first pusher formed to surround a gas flow portion to which the vacuum pressure or the air pressure is applied and a second pusher formed to surround the first pusher, the step of raising the pusher and the picker by the first height includes a step of controlling the picker to be raised together with a pusher located at an upper end among the first pusher and the second pusher.

14. The method according to claim 13, wherein the step of raising the pusher and the picker by the first height includes: a step of raising the first pusher and the second pusher to an intermediate position of the first height; and a step of raising the first pusher in a state where the second pusher is fixed at the intermediate position.

15. The method according to claim 13, wherein the step of raising the pusher and the picker by the first height includes: a step of raising the first pusher and the second pusher by the first height; and a step of lowering the second pusher to an intermediate position of the first height in a state where the first pusher is fixed.

16. A die bonder comprising: a wafer stage supporting a wafer having dies singulated and selectively separating the dies; a die transfer unit transferring the dies from the wafer stage; a die stage on which the dies transferred by the die transfer unit are placed and performing inspection on the dies; a die bonder unit picking up the dies from the die stage and bonding the dies on a substrate; and a substrate stage supporting the substrate and delivering the substrate on which bonding is completed to a magazine, the wafer stage includes: a pusher pushing up the dies attached to a dicing tape below; a pusher control portion controlling raising or lowering of the pusher; a gas flow portion located inside the pusher and forming a flow path of a gas to which a vacuum pressure or an air pressure is applied. ​ a gas flow control section that controls the vacuum pressure or the air pressure by the gas flow section; and a tape suction section that is located outside the pusher and suctions the cutting tape using a vacuum pressure, the die transfer unit includes: a picker that suctions and transfers the die from above; and a picker control section that controls the elevation drive of the picker, the picker control section lowers the picker so that the picker contacts the upper end of the die, the gas flow control section controls to apply a vacuum pressure downward during the lowering of the picker, in a state where the picker contacts the upper end of the die and the vacuum pressure is applied downward, the pusher control section and the picker control section raise the pusher and the picker by a first height, in a state where the vacuum pressure is applied downward by the gas flow control section, the picker control section raises the picker by a second height, the gas flow control section applies an air pressure upward in a state where the picker is separated from the pusher, and suctions the die to the picker.

17. The welding apparatus according to claim 16, wherein the pusher includes: a first pusher formed to surround the gas flow section; and a second pusher formed to surround the first pusher.

18. The welding apparatus according to claim 17, wherein the pusher control section raises the first pusher and the second pusher to an intermediate position of the first height, and raises the first pusher in a state where the second pusher is fixed at the intermediate position.

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