Display device

Abstract

A display device is disclosed. The display device includes a substrate including a first area, a second area, and a first curved area between the first area and the second area. The first curved area is curved around a first curved axis extending in a first direction. The display device further includes a first inorganic insulating layer disposed over the substrate and having a first opening or a first groove at least in the first curved area, an organic material layer filling at least a portion of the first opening or the first groove, and a first conductive layer extending from the first area to the second area across the first curved area and positioned over the organic material layer.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2016-0016599, filed on February 12, 2016, Korean Patent Application No. 10-2016-0029690, filed on March 11, 2016, and Korean Patent Application No. 10-2016-0042416, filed on April 6, 2016, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] The technology described generally relates to display devices. Background Technology

[0004] Typically, a display device includes display units on a substrate. Such a display device can be at least partially bent to improve visibility from multiple angles or reduce the area of ​​the non-display region.

[0005] However, defects may occur during the manufacturing of curved display devices, or the lifespan of the display devices may be reduced. Summary of the Invention

[0006] One aspect of the invention relates to a display device that has a long service life and fewer defects (such as disconnections during its manufacturing process).

[0007] Another aspect is a display device comprising: a substrate including a first region, a second region, and a first curved region located between the first region and the second region, wherein the first curved region is curved about a first curved axis extending in a first direction; a first inorganic insulating layer disposed on the substrate and including a first opening or a first groove corresponding to the first curved region; an organic material layer filling at least a portion of the first opening or the first groove; and a first conductive layer extending from the first region across the first curved region to the second region and located on the organic material layer.

[0008] The first opening or the first groove may overlap with the first curved region. The area of ​​the first opening or the first groove may be larger than the area of ​​the first curved region.

[0009] The display device may further include a protective film on the surface of a substrate, wherein the surface may be opposite to the first inorganic insulating layer and includes an opening corresponding to the first curved region. The area of ​​the opening may be larger than the area of ​​the first curved region, but smaller than the area of ​​the first opening or the first groove.

[0010] An organic material layer may cover the inner surface of the first opening or the first groove.

[0011] The organic material layer may include at least a portion of an uneven surface in its upper surface. The organic material layer may include the uneven surface only in the first opening or the first groove. The area of ​​the uneven surface in the organic material layer may be larger than the area of ​​the first curved region and smaller than the area of ​​the first opening or the first groove.

[0012] The organic material layer may include a plurality of grooves extending in a first direction and defining an uneven surface in the upper surface of the organic material layer.

[0013] The upper surface of the first conductive layer on the organic material layer can have a shape corresponding to the shape of the upper surface of the organic material layer.

[0014] The uneven surface may include a plurality of protrusions in a second direction intersecting the first direction, and the distance between protrusions at the central portion of the first opening or the first groove may be less than the distance between protrusions at other portions of the first opening or the first groove.

[0015] The uneven surface may include a plurality of protrusions in a second direction intersecting the first direction, and the height of the protrusions from the upper surface of the substrate to the center portion of the first opening or the first groove may be greater than the height of the protrusions from the upper surface of the substrate to other portions of the first opening or the first groove.

[0016] The display device may further include a stress-neutralizing layer located on the upper portion of the first conductive layer, wherein the upper surface of the stress-neutralizing layer has at least partially a shape corresponding to the uneven surface. The upper surface of the stress-neutralizing layer may have the same shape as the uneven surface. All protrusions on the upper surface of the stress-neutralizing layer may correspond to at least some of the protrusions in the uneven surface.

[0017] The organic material layer may include an uneven surface having a plurality of protrusions located on the upper surface in a second direction at least partially intersecting the first direction, and the distance between the protrusions at a portion adjacent to the inner surface of the first opening or the first groove may be less than the distance between the protrusions at other portions of the first opening or the first groove.

[0018] The organic material layer may include an uneven surface having a plurality of protrusions located on the upper surface in a second direction at least partially intersecting the first direction, and the height of the protrusions from the upper surface of the substrate to the portion adjacent to the inner surface of the first opening or the first groove may be greater than the height of the protrusions from the upper surface of the substrate to other portions of the first opening or the first groove.

[0019] The organic material layer may include multiple islands that extend in a first direction and are spaced apart from each other in a second direction that intersects the first direction.

[0020] The upper surface of the first conductive layer located above the island can have a shape corresponding to the shape of the upper surface of the island.

[0021] The distance between islands at the center of the first opening or the first groove can be less than the distance between islands at other parts of the first opening or the first groove.

[0022] The height of the island from the upper surface of the substrate to the center of the first opening or the first groove can be greater than the height of the island from the upper surface of the substrate to other parts of the first opening or the first groove.

[0023] The display device may further include: a thin-film transistor (TFT) disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode; an encapsulation layer covering the display device on the first region; and a touch electrode of a touch sensing layer located on the encapsulation layer, wherein the first conductive layer may include the same material as the touch electrode.

[0024] The display device may also include a touch protection layer that covers the touch electrodes and the first conductive layer.

[0025] The display device may further include: an encapsulation layer, including a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, the encapsulation layer being configured to cover the display device over a first region, wherein the organic material layer may include the same material as the organic encapsulation layer.

[0026] The display device may further include a second conductive layer disposed on the first region or the second region and located on a different layer than the layer on which the first conductive layer is located, and the second conductive layer may be electrically connected to the first conductive layer.

[0027] The elongation of the first conductive layer can be greater than that of the second conductive layer.

[0028] The display device may further include: a TFT disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode, wherein a first conductive layer may be located on the same layer as the source electrode and the drain electrode, and a second conductive layer may be located on the same layer as the gate electrode.

[0029] The TFT may also include a semiconductor layer, and a first inorganic insulating layer may be disposed between the semiconductor layer and the gate electrode.

[0030] A first inorganic insulating layer may be disposed between the TFT and the substrate. The TFT may also include a semiconductor layer, and an organic material layer may extend to be disposed between the semiconductor layer and the gate electrode.

[0031] The display device may further include: a TFT disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode; and a planarization layer covering the TFT and including an organic material, wherein the organic material layer may include the same material as the planarization layer.

[0032] The organic material layer can be integrally formed with the interlayer insulation layer.

[0033] The display device may further include: a first TFT disposed on a first region or a second region and including a first semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode; and a second TFT disposed on the first region or the second region and including a second semiconductor layer, a second source electrode, a second drain electrode, and a second gate electrode, wherein the distance between the layer in which the first gate electrode is located and the substrate may be smaller than the distance between the layer in which the second gate electrode is located and the substrate, a first inorganic insulating layer may be disposed between the first semiconductor layer and the first gate electrode and between the second semiconductor layer and the second gate electrode, and an organic material layer may extend to be disposed between the first inorganic insulating layer and the second gate electrode. The display device may further include a second inorganic insulating layer disposed on the organic material layer and including a second opening or a second groove corresponding to the first curved region.

[0034] The display device may further include: a second conductive layer disposed on the first region or the second region, comprising the same material as the first gate electrode and electrically connected to the first conductive layer, wherein the first conductive layer may comprise the same material as the second gate electrode.

[0035] The substrate may include a second curved region extending in a second direction intersecting the first direction within a first region, and the second curved region may be curved about a second curved axis extending in the second direction.

[0036] The substrate may have chamfered corners, the chamfered corners being closest to the point where the first and second bending axes intersect each other.

[0037] The radius of curvature at the first bending region may be smaller than the radius of curvature at the second bending region. The first inorganic insulating layer may be continuous over at least one region within the first region that includes the second bending region.

[0038] Another aspect is a display device comprising: a substrate including a first region, a second region, and a first curved region located between the first region and the second region, wherein the first curved region is curved about a first curved axis extending in a first direction; a first inorganic insulating layer disposed on the substrate and having at least a first opening or a first groove in the first curved region; an organic material layer filling at least a portion of the first opening or the first groove; and a first conductive layer extending from the first region across the first curved region to the second region and located on the organic material layer.

[0039] In the above display device, the first opening or the first groove overlaps with the first curved area.

[0040] In the above display device, the first opening or the first groove has a larger area than the first curved area.

[0041] The above display device also includes a protective film located on the surface of a substrate, wherein the surface is opposite to the first inorganic insulating layer, and wherein the protective film has a protective film opening at least in the first curved region.

[0042] In the above display device, the opening of the protective film has a larger area than the first curved region.

[0043] In the above display device, the protective film opening has an area that is larger than the first curved area and smaller than the area of ​​the first opening or the first groove.

[0044] In the above display device, an organic material layer covers the inner surface of the first opening or the first groove.

[0045] In the above display device, the organic material layer includes at least a partially uneven upper surface.

[0046] In the above display device, the uneven portion of the upper surface of the organic material layer is only provided in the first opening or the first groove.

[0047] In the above display device, the uneven portion of the organic material layer has an area that is larger than the first curved region and smaller than the area of ​​the first opening or the first groove.

[0048] In the above display device, the upper surface of the organic material layer includes a plurality of grooves extending in a first direction, wherein the grooves define an uneven portion of the upper surface.

[0049] In the above display device, the upper surface of the first conductive layer has a shape corresponding to the shape of the upper surface of the organic material layer.

[0050] In the above display device, the uneven portion of the upper surface includes a plurality of protrusions in a second direction intersecting the first direction, wherein the distance between the protrusions at the center portion of the first opening or the first groove is less than the distance between the protrusions at other portions of the first opening or the first groove.

[0051] In the above display device, the uneven portion of the upper surface includes a plurality of protrusions in a second direction intersecting the first direction, and wherein the height of the protrusions from the upper surface of the substrate to the center portion of the first opening or the first groove is greater than the height of the protrusions from the upper surface of the substrate to other portions of the first opening or the first groove.

[0052] The above display device may further include a stress neutralizing layer located on the upper portion of the first conductive layer, wherein the upper surface of the stress neutralizing layer has at least partially a shape corresponding to the uneven portion of the upper surface of the organic material layer.

[0053] In the above display device, the upper surface of the stress neutralizing layer has the same shape as the uneven portion.

[0054] In the above display device, all the protrusions on the upper surface of the stress neutralization layer correspond to at least some of the protrusions in the uneven portion.

[0055] In the above display device, the organic material layer includes an uneven surface having a plurality of protrusions in a second direction intersecting the first direction, wherein the distance between the protrusions in the portion adjacent to the inner surface of the first opening or the first groove is less than the distance between the protrusions in other portions of the first opening or the first groove.

[0056] In the above display device, the organic material layer includes an uneven surface having a plurality of protrusions in a second direction intersecting the first direction, and wherein the height of the protrusions from the upper surface of the substrate to the portion adjacent to the inner surface of the first opening or the first groove is greater than the height of the protrusions from the upper surface of the substrate to other portions of the first opening or the first groove.

[0057] In the above display device, the organic material layer includes multiple islands that extend in a first direction and are spaced apart from each other in a second direction that intersects the first direction.

[0058] In the above display device, the upper surface of the first conductive layer located on the island has a shape corresponding to the island.

[0059] In the above display device, the distance between islands at the center of the first opening or the first groove is less than the distance between islands at other parts of the first opening or the first groove.

[0060] In the above display device, the height of the island from the upper surface of the substrate to the center of the first opening or the first groove is greater than the height of the island from the upper surface of the substrate to other parts of the first opening or the first groove.

[0061] The above display device further includes: a thin-film transistor (TFT) disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode; an encapsulation layer covering an organic light-emitting diode (OLED) on the first region; and a touch electrode of a touch sensing layer located on the encapsulation layer, wherein the first conductive layer and the touch electrode are formed of at least one of the same materials.

[0062] The above display device also includes a touch protective layer covering the touch electrodes and the first conductive layer.

[0063] The above display device also includes an additional OLED in the second region, wherein the encapsulation layer covers the additional OLED in the second region.

[0064] The above display device further includes an encapsulation layer comprising a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, wherein the encapsulation layer covers the display device on the first region, and wherein the organic material layer and the organic encapsulation layer are formed of at least one of the same materials.

[0065] The above display device further includes a second conductive layer, which is disposed on the first region or the second region and located on a different layer than the layer on which the first conductive layer is located, wherein the second conductive layer is electrically connected to the first conductive layer.

[0066] In the above display device, the elongation of the first conductive layer is greater than that of the second conductive layer.

[0067] The above display device further includes: a TFT, disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode, wherein a first conductive layer is located on the same layer as the source electrode and the drain electrode, and wherein a second conductive layer is located on the same layer as the gate electrode.

[0068] In the above display device, the TFT also includes a semiconductor layer, wherein a first inorganic insulating layer is disposed between the semiconductor layer and the gate electrode.

[0069] In the above display device, the first inorganic insulating layer is disposed between the TFT and the substrate.

[0070] In the above display device, the TFT also includes a semiconductor layer, wherein an organic material layer extends and is interposed between the semiconductor layer and the gate electrode.

[0071] The above display device further includes: a TFT disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode; and a planarization layer covering the TFT and formed of an organic material, wherein the organic material layer and the planarization layer are formed of at least one of the same materials.

[0072] The above display device further includes: a TFT disposed on a first region or a second region and including a source electrode, a drain electrode and a gate electrode; and an interlayer insulating layer disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, wherein the organic material layer and the interlayer insulating layer are formed of at least one identical material.

[0073] In the above display device, the organic material layer and the interlayer insulating layer are integrally formed.

[0074] The above display device further includes: a first TFT disposed on a first region or a second region and including a first semiconductor layer, a first source electrode, a first drain electrode and a first gate electrode; and a second TFT disposed on the first region or the second region and including a second semiconductor layer, a second source electrode, a second drain electrode and a second gate electrode, wherein the distance between the layer in which the first gate electrode is located and the substrate is less than the distance between the layer in which the second gate electrode is located and the substrate, wherein a first inorganic insulating layer is disposed between the first semiconductor layer and the first gate electrode and between the second semiconductor layer and the second gate electrode, and wherein an organic material layer extends to be inserted between the first inorganic insulating layer and the second gate electrode.

[0075] The above display device also includes a second inorganic insulating layer disposed on the organic material layer and including a second opening or a second groove corresponding to the first bending region.

[0076] The above display device further includes a second conductive layer disposed on a first region or a second region, wherein the second conductive layer and the first gate electrode are formed of at least one of the same materials, wherein the second conductive layer is electrically connected to the first conductive layer, and wherein the first conductive layer and the second gate electrode are formed of at least one of the same materials.

[0077] In the above display device, the substrate includes a second curved region extending in a second direction intersecting the first direction within a first region, wherein the second curved region is curved about a second curved axis extending in the second direction.

[0078] In the above display device, the substrate has a chamfered corner, and the chamfered corner is closest to the point where the first bending axis and the second bending axis intersect each other.

[0079] In the above display device, the radius of curvature at the first curved region is smaller than the radius of curvature at the second curved region.

[0080] In the above display device, the first inorganic insulating layer is continuous over at least one region within the first region, including the second curved region.

[0081] The above display device also includes an additional inorganic insulating layer, which includes additional openings corresponding to the first curved region and overlapping the first conductive layer.

[0082] In the above display device, the additional opening overlaps with the first curved area.

[0083] In the above display device, the additional opening has an area larger than that of the first curved region.

[0084] In the above display device, the first opening or the first groove overlaps with the first curved area.

[0085] In the above display device, the area of ​​the first opening or the first groove is larger than that of the first curved area.

[0086] In the above display device, the additional opening has an area larger than that of the first opening or the first recess.

[0087] In the above display device, the additional opening corresponds to the first conductive layer within the first curved area.

[0088] In the above display device, the additional opening overlaps with the first conductive layer within the first curved region.

[0089] In the above display device, the additional opening has an area larger than the area of ​​the upper surface of the first conductive layer within the first curved region.

[0090] In the above display device, an additional inorganic insulating layer at least partially covers the upper surface of the organic material layer on the outer portion of the first conductive layer within the first bending region.

[0091] Another aspect is a display device comprising: a substrate including a first region, a second region, and a first curved region located between the first region and the second region, wherein the first curved region is curved about a first curved axis extending in a first direction; a first inorganic insulating layer disposed on the substrate and having a first opening or a first groove located at least in the first curved region; an organic material layer filling at least a portion of the first opening or the first groove; and a first conductive layer extending across the first curved region from the first region to the second region and located on the organic material layer. Attached Figure Description

[0092] Figure 1 This is a schematic perspective view showing a display device according to an embodiment.

[0093] Figure 2 It is partially shown Figure 1A schematic cross-sectional view of the display device.

[0094] Figure 3 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0095] Figure 4 This is a schematic cross-sectional view of the display device according to the comparative example.

[0096] Figure 5 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0097] Figure 6 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0098] Figure 7 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0099] Figure 8 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0100] Figure 9 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0101] Figure 10 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0102] Figure 11 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0103] Figure 12 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0104] Figure 13 , Figure 14 and Figure 15 It shows the manufacturing process. Figure 12 A schematic cross-sectional view of the process of the display device.

[0105] Figure 16 It shows the manufacturing process. Figure 12 A schematic cross-sectional view of the process of the display device.

[0106] Figure 17 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0107] Figure 18 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0108] Figure 19This is a schematic cross-sectional view showing a display device according to an embodiment.

[0109] Figure 20 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0110] Figure 21 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0111] Figure 22 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0112] Figure 23 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0113] Figure 24 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0114] Figure 25 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0115] Figure 26 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0116] Figure 27 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0117] Figure 28 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0118] Figure 29 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0119] Figure 30 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0120] Figure 31 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0121] Figure 32 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0122] Figure 33 It is a section taken along the first bending axis of the first bending region. Figure 32 A schematic cross-sectional view of the display device.

[0123] Figure 34This is a schematic cross-sectional view showing a display device according to an embodiment.

[0124] Figure 35 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0125] Figure 36 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0126] Figure 37 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0127] Figure 38 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0128] Figure 39 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0129] Figure 40 This is a schematic cross-sectional view showing a display device according to an embodiment.

[0130] Figure 41 This is a schematic plan view of a display device according to an embodiment.

[0131] Figure 42 This is a schematic plan view of a display device according to an embodiment.

[0132] Figure 43 This is a schematic perspective view showing a display device according to an embodiment.

[0133] Figure 44 It is partially shown Figure 43 A schematic plan view of the display device.

[0134] Figure 45 This is a schematic perspective view showing a display device according to an embodiment.

[0135] Figure 46 This is a schematic perspective view showing a display device according to an embodiment. Detailed Implementation

[0136] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout the drawings. In this respect, embodiments of this disclosure may take different forms and should not be construed as limited to the description set forth herein. Therefore, these embodiments are merely examples of aspects of the invention described below with reference to the accompanying drawings. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When a statement such as “at least one of…” follows a list of elements, it modifies the entire list of elements and does not modify any individual element in the list.

[0137] The described technology will be described in detail below by referring to the accompanying drawings and explaining preferred embodiments. The same reference numerals in the drawings denote the same elements.

[0138] For ease of explanation, the dimensions of the components in the accompanying drawings may be exaggerated. In other words, since the dimensions and thicknesses of the components in the drawings are arbitrarily shown for ease of interpretation, the embodiments described below are not limited thereto.

[0139] In the examples below, the x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. In this disclosure, the term "substantially" includes, in some applications, and according to the degree of completeness, substantiality, or any significant extent as understood by those skilled in the art. Furthermore, "forming, setting, or positioning on" may also mean "forming, setting, or positioning on". The term "connection" includes electrical connection.

[0140] Figure 1 This is a schematic perspective view partially showing a display device according to an embodiment, and Figure 2 It is partially shown Figure 1 A schematic cross-sectional view of a display device. In the display device, the substrate 100, which is part of the display device, is as follows: Figure 1 The substrate 100 is partially bent, and therefore, the display device is also bent due to the bent substrate 100. However, for ease of description, Figure 2 An unbent display device is shown. For ease of description, other sectional views and plan views according to one or more embodiments, which will be described later, also show the unbent display device.

[0141] like Figure 1 and Figure 2As shown, the substrate 100 included in the display device includes a first curved region 1BA extending in a first direction (+y direction). The first curved region 1BA is located between the first region 1A and the second region 2A in a second direction (+x direction) intersecting the first direction. Additionally, as... Figure 1 As shown, substrate 100 is bent about a first bending axis 1BAX extending in a first direction (+y direction). Substrate 100 may include a variety of materials having flexible or bendable properties, such as polymeric resins, such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallyl compounds, polyimide (PI), polycarbonate (PC), and cellulose acetate propionate (CAP).

[0142] The first region 1A includes the display region DA. For example... Figure 2 As shown, the first region 1A may include a portion of the non-display area located outside the display area DA, as well as the display area DA. The second region 2A also includes a non-display area. If necessary, the second region 2A may also include an additional display area (not shown).

[0143] like Figure 2 As shown, in addition to the display device 300, the thin-film transistor (TFT) 210 electrically connected to the display device 300 can be located on the display area DA of the substrate 100. Figure 2 In this design, an organic light-emitting diode (OLED) serves as a display device 300 located on the display area DA. If the second area 2A includes an additional display area, the OLED can be located on the additional display area, and the TFT can also be located on the additional display area. Such an electrical connection from the OLED to the TFT 210 indicates that the pixel electrode 310 is electrically connected to the TFT 210. If desired, a TFT (not shown) can be arranged on a peripheral region outside the display area DA of the substrate 100. The TFT located on the peripheral region can be, for example, part of a circuit unit for controlling electrical signals applied to the display area DA.

[0144] TFT 210 may include a semiconductor layer 211 comprising amorphous silicon, polycrystalline silicon, or organic semiconductor materials, a gate electrode 213, a source electrode 215a, and a drain electrode 215b. To ensure insulation between the semiconductor layer 211 and the gate electrode 213, a gate insulating layer 120 formed of an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be inserted between the semiconductor layer 211 and the gate electrode 213. Additionally, an interlayer insulating layer 130 formed of an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed on the gate electrode 213, and the source electrode 215a and drain electrode 215b may be disposed on the interlayer insulating layer 130. As described above, the insulating layer comprising inorganic materials may be formed using chemical vapor deposition (CVD) or atomic layer deposition (ALD) methods. This also applies to one or more embodiments and their modified examples, which will be described later.

[0145] A buffer layer 110 formed of an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride can be disposed between the TFT 210 having the above structure and the substrate 100. The buffer layer 110 can improve the smoothness of the upper surface of the substrate 100, or can prevent or reduce the penetration of impurities into the semiconductor layer 211 of the TFT 210.

[0146] Additionally, the planarization layer 140 can be disposed on the TFT 210. For example, as Figure 2 As shown, the OLED is disposed on the TFT 210, and the planarization layer 140 can planarize the upper portion of the protective layer covering the TFT 210. The planarization layer 140 can be formed of an organic material such as benzocyclobutene (BCB) or hexamethyldisiloxane (HMDSO). Figure 2 In this context, planarization layer 140 has a single-layer structure, but planarization layer 140 can also have a multi-layer structure. Additionally, as... Figure 2 As shown, the planarization layer 140 may have an opening on the outer portion of the display area DA, such that a portion of the planarization layer 140 on the display area DA and a portion of the planarization layer 140 on the second region 2A can be physically separated. Therefore, impurities from the outside may not penetrate the planarization layer 140 into the display area DA.

[0147] In the display area DA of the substrate 100, the OLED can be located on the planarization layer 140, wherein the OLED includes a pixel electrode 310, a counter electrode 330, and an intermediate layer 320 including an emission layer and disposed between the pixel electrode 310 and the counter electrode 330. Figure 2 As shown, the pixel electrode 310 is electrically connected to the TFT 210 through an opening formed in the planarization layer 140, which contacts one of the source electrode 215a and the drain electrode 215b.

[0148] A pixel defining layer 150 may be disposed on the planarization layer 140. The pixel defining layer 150 has an opening corresponding to each sub-pixel (i.e., an opening exposing at least the central portion of the pixel electrode 310) to define the pixel. Furthermore, in Figure 2 In the example, the pixel defining layer 150 increases the distance between the edge of the pixel electrode 310 and the opposing electrode 330 located above the pixel electrode 310 to prevent arcing at the edge of the pixel electrode 310. The pixel defining layer 150 may include, for example, an organic material, such as polyimide or hexamethyldisiloxane (HMDSO).

[0149] The intermediate layer 320 of the OLED can be formed of a low molecular weight organic material or a polymeric organic material. When the intermediate layer 320 is formed of a low molecular weight organic material, the emitter layer can be a single-layer or multi-layer structure including a hole injection layer (HIL), a hole transport layer (HTL), an emitter layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL), and examples of organic materials can include copper phthalocyanine (CuPc), N,N'-bis(naphthyl-1-yl)-N,N'-benzidine (NPB), and aluminum tri-8-hydroxyquinoline (Alq3). The low molecular weight organic material can be deposited by vacuum deposition.

[0150] When the intermediate layer 320 is formed of a polymer material, the intermediate layer 320 may include a hole transport layer (HTL) and an emitter layer (EML). Here, the HTL may include PEDOT, and the EML may include a polystyrene (PPV)-based or polyfluorene-based polymer material. This intermediate layer 320 may be formed by screen printing, inkjet printing, or laser-induced thermal imaging (LITI).

[0151] The intermediate layer 320 is not limited to the above example, but can have various structures. In addition, the intermediate layer 320 may include a layer integrally formed in the plurality of pixel electrodes 310, or may be patterned to correspond to each of the pixel electrodes 310.

[0152] The relative electrode 330 is arranged above the display area DA, and as shown... Figure 2 The diagram shows that the display area DA can be covered. In other words, the relative electrode 330 can be formed relative to multiple OLEDs to correspond to multiple pixel electrodes 310.

[0153] Because OLEDs are susceptible to damage from external moisture or oxygen, an encapsulation layer 400 can cover the OLED to protect it. The encapsulation layer 400 covers the display area DA and can then extend beyond the display area DA. Figure 2 As shown, the encapsulation layer 400 may include a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430.

[0154] The first inorganic encapsulation layer 410 covers the opposing electrode 330 and may include silicon oxide, silicon nitride, and / or silicon oxynitride. If desired, other layers, such as a capping layer, may be disposed between the first inorganic encapsulation layer 410 and the opposing electrode 330. Since the first inorganic encapsulation layer 410 is formed according to the structure disposed beneath it, the first inorganic encapsulation layer 410 may have an uneven upper surface. An organic encapsulation layer 420 covers the first inorganic encapsulation layer 410 and, unlike the first inorganic encapsulation layer 410, the organic encapsulation layer 420 may have a flat upper surface. For example, the organic encapsulation layer 420 may have a generally flat upper surface at the portion corresponding to the display area DA. The organic encapsulation layer 420 may contain at least one material including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane. The second inorganic encapsulation layer 430 covers the organic encapsulation layer 420 and may include silicon oxide, silicon nitride, and / or silicon oxynitride. The second inorganic encapsulation layer 430 may contact the first inorganic encapsulation layer 410 through its edge located at the outer portion of the display area DA, so as not to expose the organic encapsulation layer 420 to the outside.

[0155] As described above, since the encapsulation layer 400 includes a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430, even if cracks exist in the encapsulation layer 400 in the above multilayer structure, the cracks can be interrupted between the first inorganic encapsulation layer 410 and the organic encapsulation layer 420 or between the organic encapsulation layer 420 and the second inorganic encapsulation layer 430. In this way, the formation of pathways through which external moisture or oxygen can penetrate into the display area DA can be prevented or reduced.

[0156] The polarization plate 520 can be mounted on the encapsulation layer 400 using an optically clear adhesive (OCA) 510. The polarization plate 520 can reduce the reflection of external light. For example, when external light passing through the polarization plate 520 is reflected by the upper surface of the opposing electrode 330 and then passes through the polarization plate 520 again, the external light passes through the polarization plate 520 twice, and the phase of the external light can be changed. Therefore, the phase of the reflected light is different from the phase of the external light entering the polarization plate 520, causing destructive interference, and thus reducing the reflection of external light and improving visibility. Figure 2 As shown, the OCA 510 and polarization plate 520 can cover the openings in the planarization layer 140. The display device according to the embodiment may substantially exclude the polarization plate 520, and if necessary, the polarization plate 520 can be omitted or replaced with other components. For example, the polarization plate 520 can be omitted, and instead, a black matrix and color filters can be used to reduce the reflection of external light.

[0157] Additionally, the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130, which contain inorganic materials, can be referred to as the first inorganic insulating layer. For example... Figure 2 As shown, the first inorganic insulating layer may include a first opening corresponding to the first curved region 1BA. That is, the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 may each include openings 110a, 120a, and 130a corresponding to the first curved region 1BA, respectively. The correspondence between the first opening and the first curved region 1BA indicates that the first opening overlaps with the first curved region 1BA. Here, the area of ​​the first opening may be larger than the area of ​​the first curved region 1BA. Therefore, in Figure 2 In this context, the width OW of the first opening is greater than the width of the first curved region 1BA. Here, the area of ​​the first opening can be defined as the area of ​​the opening with the smallest area among the openings 110a, 120a, and 130a of the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130. Furthermore, in... Figure 2 In this context, the area of ​​the first opening is described as being defined by the area of ​​the opening 110a in the buffer layer 110.

[0158] exist Figure 2 In this context, the inner surface of the opening 110a in the buffer layer 110 and the inner surface of the opening 120a in the gate insulating layer 120 are described as flush with each other; however, one or more embodiments are not limited to this. For example, such as Figure 3 As shown, Figure 3 This is a schematic cross-sectional view of a portion of a display device according to another embodiment. The area of ​​the opening 120a in the gate insulating layer 120 may be larger than the area of ​​the opening 110a in the buffer layer 110. In this case, the area of ​​the first opening may also be defined as the area of ​​the opening with the smallest area among the openings 110a, 120a, and 130a in the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130.

[0159] The display device may include an organic material layer 160 that fills at least a portion of a first opening in a first inorganic insulating layer. Figure 2 In this configuration, the organic material layer 160 completely fills the first opening. Additionally, the display device may include a first conductive layer 215c, which extends from the first region 1A toward the second region 2A through the first curved region 1BA to be positioned on the organic material layer 160. The first conductive layer 215c may be located on an inorganic insulating layer, such as an interlayer insulating layer 130, where the organic material layer 160 is not present. The first conductive layer 215c may be formed simultaneously or together with the source electrode 215a or drain electrode 215b using the same material as the source electrode 215a or drain electrode 215b.

[0160] As mentioned above, although Figure 2The display device is shown without bending for ease of description, but in reality, the display device is in a state where the substrate 100 is bent at the first bending region 1BA. Therefore, the display device is manufactured such that the substrate 100 is bent as... Figure 2 As shown, the substrate is flat, and then the substrate 100 is bent at the first bending region 1BA, so that the display device can have the following characteristics: Figure 1 The shape shown. Here, when the substrate 100 is bent at the first bending region 1BA, tensile stress can be applied to the first conductive layer 215c, but the display device can prevent or reduce the occurrence of defects in the first conductive layer 215c during the bending process.

[0161] If the first inorganic insulating layer, including the buffer layer 110, the gate insulating layer 120, and / or the interlayer insulating layer 130, does not include an opening at the first bending region 1BA, but is formed continuously from the first region 1A to the second region 2A, and if the first conductive layer 215c is located on the first inorganic insulating layer, then when the substrate 100 is bent, a large tensile stress is applied to the first conductive layer 215c. For example, the first inorganic insulating layer has a higher hardness than the organic material layer, making it more prone to cracking at the first bending region 1BA. If cracks appear in the first inorganic insulating layer, the first conductive layer 215c on the first inorganic insulating layer may also have cracks, and therefore, there is a high probability of defects such as breaks occurring in the first conductive layer 215c.

[0162] However, according to the display device of the embodiment, the first inorganic insulating layer has a first opening at the first bending region 1BA as described above, and the portion of the first conductive layer 215c corresponding to the first bending region 1BA is located on the organic material layer 160 that fills at least a portion of the first opening of the first inorganic insulating layer. Since the first inorganic insulating layer has a first opening at the first bending region 1BA, the possibility of cracks forming in the first inorganic insulating layer is very low, and due to the organic material contained in the organic material layer 160, the organic material layer 160 has a low possibility of cracking. Therefore, the occurrence of cracks in a portion of the first conductive layer 215c, which corresponds to the first bending region 1BA and is located on the organic material layer 160, can be prevented or reduced. Since the organic material layer 160 has a hardness lower than that of the inorganic material layer, the tensile stress generated by the bending of the substrate 100 can be absorbed by the organic material layer 160, thereby effectively reducing the concentration of tensile stress on the first conductive layer 215c.

[0163] In addition to the first conductive layer 215c, the display device may include second conductive layers 213a and 213b. The second conductive layers 213a and 213b may be disposed on the first region 1A or the second region 2A, located at a different level than the first conductive layer 215c, and may be electrically connected to the first conductive layer 215c. Figure 2 In this configuration, the second conductive layers 213a and 213b are located at the same layer level as the gate electrode 213 of the TFT 210, that is, on the gate insulating layer 120, and comprise the same material as the gate electrode 213. Furthermore, the first conductive layer 215c contacts the second conductive layers 213a and 213b via contact holes formed in the interlayer insulating layer 130. Additionally, the second conductive layer 213a is located on the first region 1A, and the second conductive layer 213b is located on the second region 2A.

[0164] The second conductive layer 213a located on the first region 1A can be electrically connected to the TFT in the display region DA, and therefore, the first conductive layer 215c can be electrically connected to the TFT in the display region DA via the second conductive layer 213a. The second conductive layer 213b located on the second region 2A can also be electrically connected to the TFT in the display region DA via the first conductive layer 215c. As described above, the second conductive layers 213a and 213b located on the outer portion of the display region DA can be electrically connected to components located in the display region DA, or can extend toward the display region DA to be at least partially positioned in the display region DA.

[0165] As mentioned above, for ease of description, Figure 2 An unbent display device is shown, but the display device is actually positioned on substrate 100 as shown. Figure 1 The diagram shows a bent state at the first bending region 1BA. Therefore, the display device is manufactured in such a state that the substrate 100, as shown... Figure 2 As shown, the substrate is flat. Then, the substrate 100 can be bent at the first bending region 1BA, allowing the display device to have, for example... Figure 1 The shape shown. Here, when the substrate 100 is bent at the first bending region 1BA, tensile stress can be applied to the component located within the first bending region 1BA.

[0166] Therefore, the first conductive layer 215c extending across the first bending region 1BA may include a material with a high strain rate, and thus, cracks or defects such as breaks in the first conductive layer 215c can be prevented. Additionally, the second conductive layers 213a and 213b may include materials in the first region 1A or the second region 2A having a lower strain rate than that of the first conductive layer 215c and the same electrical / physical properties as the first conductive layer 215c, and thus, the efficiency of transmitting electrical signals in the display device can be improved, or the defect rate during the manufacturing process can be reduced. For example, the second conductive layers 213a and 213b may include molybdenum, and the first conductive layer 215c may include aluminum. If desired, the first conductive layer 215c and the second conductive layers 213a and 213b may include a multilayer structure.

[0167] and Figure 2 Unlike the example shown, the upper surface of the second conductive layer 213b located on the second region 2A may not be at least partially covered by the planarization layer 140, but may be exposed to the outside in order to be electrically connected to a variety of electronic devices or printed circuit boards.

[0168] like Figure 2 As shown, the organic material layer 160 may cover the inner surface of the first opening in the first inorganic insulating layer. As described above, since the first conductive layer 215c may have the same material as the source electrode 215a and the drain electrode 215b, and may be formed simultaneously with the source electrode 215a and the drain electrode 215b, the conductive layer may be formed on the entire surface of the substrate 100 and patterned to form the source electrode 215a, the drain electrode 215b, and the first conductive layer 215c. If the organic material layer 160 does not cover the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130, the conductive material may not be removed, but may remain on the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130 during the patterning of the conductive layer. In this situation, the conductive material retained on the inner layer may cause an electrical short circuit with other conductive layers.

[0169] Therefore, when the organic material layer 160 is formed, the organic material layer 160 can cover the inner surface of the first opening in the first inorganic insulating layer. Figure 2In this context, the organic material layer 160 is described as having a constant thickness; however, the organic material layer 160 may have a thickness that varies depending on its location, such that the organic material layer 160 may have a gently sloping upper surface on the inner surface of the opening 110a of the buffer layer 110, the inner surface of the opening 120a of the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130. Therefore, when the conductive layer is patterned to form the source electrode 215a, the drain electrode 215b, and the first conductive layer 215c, the residue of conductive material that should be removed can be effectively prevented.

[0170] In addition, such as Figure 2 As shown, the organic material layer 160 may have a non-flat surface 160a on at least a portion of its upper surface in the +z direction. Since the organic material layer 160 includes the non-flat surface 160a, the first conductive layer 215c located on the organic material layer 160 may have an upper surface and / or a lower surface having a shape corresponding to the non-flat surface 160a of the organic material layer 160.

[0171] As described above, since tensile stress can be applied to the first conductive layer 215c when the substrate 100 is bent at the first bending region 1BA during the manufacturing process, the amount of tensile stress applied to the first conductive layer 215c can be reduced when the upper and / or lower surfaces of the first conductive layer 215c have a shape corresponding to the uneven surface 160a of the organic material layer 160. In other words, the tensile stress generated during the bending process can be reduced by deformation of the shape of the organic material layer 160, which has lower hardness. Here, the first conductive layer 215c, which has an uneven shape at least before the bending process, can be deformed to correspond to the shape of the organic material layer 160 deformed due to the bending process, and therefore, defects such as breaks in the first conductive layer 215c can be prevented.

[0172] Furthermore, the uneven surface 160a is at least partially formed on the upper surface of the organic material layer 160 (in the +z direction), which increases the surface area of ​​the upper surface of the organic material layer 160 in the first opening, as well as the surface areas of the upper and lower surfaces of the first conductive layer 215c. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin, thereby reducing the tensile stress caused by the bending of the substrate 100.

[0173] Since the first conductive layer 215c is located on the organic material layer 160, the lower surface of the first conductive layer 215c has a shape corresponding to the uneven surface 160a of the organic material layer 160. However, the upper surface of the first conductive layer 215c may have an uneven surface that is independent of the shape of the uneven surface 160a of the organic material layer 160.

[0174] For example, after forming a conductive material layer on the organic material layer 160, photoresist is applied to the conductive material layer, and the photoresist is developed by varying the exposure amount according to the position of the photoresist using a slit mask or a halftone mask. Therefore, the conductive material layer exposed by the development of the photoresist is etched, then the photoresist is removed, and then a first conductive layer 215c is formed. Since the exposure amount varies according to the position of the photoresist using a slit mask or a halftone mask, the degree of etching of the conductive material layer can vary depending on the position of the conductive material layer. Therefore, an uneven surface can be artificially formed on the upper surface of the first conductive layer 215c, and in this case, the upper surface of the first conductive layer 215c can have an uneven surface independent of the uneven surface 160a of the organic material layer 160. This will apply to one or more embodiments and their modified examples described later. Even if the process of artificially forming an uneven surface on the upper surface of the first conductive layer 215c is performed as described above, the uneven surface on the upper surface of the first conductive layer 215c can correspond to the uneven surface 160a of the organic material layer 160.

[0175] The uneven surface 160a on the upper surface (+z direction) of the organic material layer 160 can be formed in various ways. For example, when forming the organic material layer 160, a photoresist material is used, and the exposure is varied according to the position of the organic material layer 160 (the upper surface of the organic material layer 160 is flat) by using a slit mask or a halftone mask, so that certain portions can be etched (removed) more than other portions. Here, the portion that is etched more can be a recessed portion in the upper surface of the organic material layer 160. The methods used in manufacturing the display device according to the embodiment are not limited to the examples described above. For example, after forming the organic material layer 160 with a flat upper surface, certain portions can be removed by a dry etching method, and many other methods can be used.

[0176] To give the organic material layer 160 a non-uniform surface 160a on its upper surface (in the +z direction), the organic material layer 160 may include a plurality of grooves on its upper surface (in the +z direction), wherein the grooves extend in the first direction (+y direction). Here, the shape of the upper surface of the first conductive layer 215c on the organic material layer 160 corresponds to the shape of the upper surface of the organic material layer 160.

[0177] The organic material layer 160 may have an uneven surface 160a only within the first opening of the first inorganic insulating layer. Figure 2In this process, the width UEW of the uneven surface 160a of the organic material layer 160 is smaller than the width OW of the first opening of the first inorganic insulating layer. If the organic material layer 160 has an uneven surface 160a throughout the entire interior and exterior of the first opening in the first inorganic insulating layer, then the organic material layer 160 has an uneven surface 160a near the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130.

[0178] In this case, as shown in the comparison example, a portion of the display device is shown. Figure 4 As shown, the thickness of the organic material layer 160 in the recessed portion is relatively smaller than the thickness of the protruding portion. Therefore, when the recessed portion is located around the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130, the organic material layer 160 may break. Therefore, the organic material layer 160 may have an uneven surface 160a only within the first opening of the first inorganic insulating layer, which can prevent the organic material layer 160 around the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130.

[0179] As described above, in order to prevent a break in the first conductive layer 215c at the first bending region 1BA, the organic material layer 160 can have a non-uniform surface 160a on the first bending region 1BA. Therefore, the area of ​​the non-uniform surface 160a of the organic material layer 160 can be larger than the area of ​​the first bending region 1BA and smaller than the area of ​​the first opening. That is, as... Figure 2 As shown, the width UEW of the uneven surface 160a of the organic material layer 160 is greater than the width of the first curved region 1BA and less than the width OW of the first opening.

[0180] Additionally, as shown in the example of a portion of the display device according to an embodiment... Figure 6As shown, even if the organic material layer 160 has an uneven surface 160a throughout the entire interior and exterior of the first opening in the first inorganic insulating layer, the protruding portion of the organic material layer 160 can be located around the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130. In this case, since the protruding portion of the organic material layer 160 is relatively thicker than the recessed portion of the organic material layer 160, breakage of the organic material layer 160 around the inner surface of the opening 110a in the buffer layer 110, the inner surface of the opening 120a in the gate insulating layer 120, or the inner surface of the opening 130a in the interlayer insulating layer 130 can be prevented.

[0181] Additionally, the stress neutralizing layer (SNL) 600 may be located on the outer portion of the display area DA. That is, the SNL 600 may be located on the first conductive layer 215c to at least correspond to the first bending region 1BA.

[0182] When the stacked structure is bent, a stress-neutral surface exists within it. Without the SNL 600, excessive tensile stress might be applied to the first conductive layer 215c in the first bending region 1BA when the substrate 100 bends, because the position of the first conductive layer 215c might not correspond to the stress-neutral surface. However, by forming the SNL 600 and adjusting its thickness and modulus, the position of the stress-neutral surface in the structure comprising the substrate 100, the first conductive layer 215c, and the SNL 600 can be adjusted. Therefore, the stress-neutral surface can be adjusted to be located around the first conductive layer 215c via the SNL 600, thereby reducing the tensile stress applied to the first conductive layer 215c.

[0183] and Figure 2 Unlike other examples, SNL 600 can extend to the end of the substrate 100 in a display device. For example, in the second region 2A, the first conductive layer 215c, the second conductive layer 213b, and / or other conductive layers electrically connected to the first and second conductive layers are at least partially not covered by the interlayer insulating layer 130 or the planarization layer 140, but are electrically connected to various electronic devices or printed circuit boards. Therefore, the first conductive layer 215c, the second conductive layer 213b, and / or other conductive layers electrically connected to the first and second conductive layers can have portions electrically connected to various electronic devices or printed circuit boards. Here, it is necessary to protect the electrical connection portions from external impurities (e.g., moisture), and therefore, SNL 600 can cover the electrical connection portions so as to also serve as a protective layer. For this purpose, SNL 600 can extend to, for example, the end of the substrate 100 of a display device.

[0184] In addition, Figure 2In this embodiment, the upper surface of SNL 600 in the direction toward the display area DA (-x direction) is flush with the upper surface of polarization plate 520 (in the +z direction), but one or more embodiments are not limited thereto. For example, the end of SNL 600 in the direction toward the display area DA (-x direction) may partially cover the upper surface at the edge of polarization plate 520. Alternatively, the end of SNL 600 in the direction toward the display area DA (-x direction) may not contact polarization plate 520 and / or OCA 510. In the latter case, during or after the formation of SNL 600, degradation of the display device (e.g., OLED) due to gas generated from SNL 600 and moving toward the display area DA (-x direction) can be prevented.

[0185] like Figure 2 As shown, if the upper surface of SNL 600 in the direction toward the display area DA (-x direction) is flush with the upper surface of polarization plate 520 in the +z direction, if the end of SNL 600 in the direction toward the display area DA (-x direction) partially covers the upper surface at the end of polarization plate 520, or if the end of SNL 600 in the direction toward the display area DA (-x direction) contacts OCA 510, then the thickness of the end of SNL 600 near the display area DA (-x direction) can be greater than the thickness of other parts of SNL 600. Since liquid phase material or paste material can be applied and hardened to form SNL 600, the volume of SNL 600 may be reduced by the hardening process. Here, if the end of SNL 600 near the display area DA (-x direction) contacts polarization plate 520 and / or OCA 510, then said end of SNL 600 is fixed in this position, and therefore, volume reduction occurs in other parts of SNL 600. Therefore, the thickness of the end of the SNL 600 near the display area DA (-x direction) can be greater than the thickness of other parts of the SNL 600.

[0186] Figure 6 This is a schematic cross-sectional view showing a portion of a display device according to an embodiment, and for example, a portion around a first opening in a first inorganic insulating layer. In the display device, as described above, the uneven surface 160a of the organic material layer 160 has a plurality of protrusions in a second direction (+x direction) intersecting the first direction (+y direction). Here, the distance d1 between two adjacent protrusions at the central portion of the first opening is smaller than the distance d2 between two adjacent protrusions in other portions of the first opening.

[0187] As referenced above Figure 1The substrate 100 of the display device is bent about a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and at this time, the maximum tensile stress may be applied to the first conductive layer 215c at the central portion of the first bending region 1BA (i.e., the central portion of the first opening). Therefore, by reducing the distance d1 between the protrusions at the central portion of the first opening to be smaller than the distance d2 between the protrusions at other portions of the first opening, the surface area of ​​the upper surface of the organic material layer 160 at the central portion of the first opening and the surface areas of the upper and lower surfaces of the first conductive layer 215c at the central portion of the first opening can be relatively larger than the surface areas of other portions of the first opening. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing the tensile stress caused by the bending of the substrate 100. Here, the point where the distance d1 between the protrusions changes to the distance d2 can be located within the first bending region 1BA.

[0188] In the portion of the first opening other than the central portion or the portion adjacent to the edge of the first opening, the distance between adjacent protrusions may differ from distance d1 or distance d2. Furthermore, the distance between adjacent protrusions may gradually increase from the central portion of the first opening toward the edge of the first opening. This applies to other embodiments and their modifications described below.

[0189] Figure 7 This is a schematic cross-sectional view of a part of a display device according to an embodiment, and for example, a portion around a first opening in a first inorganic insulating layer. In the display device, as described above, the uneven surface 160a of the organic material layer 160 may have multiple protrusions in a second direction (+x direction) intersecting the first direction (+y direction). Here, the height h1 of the protrusion from the upper surface of the substrate 100 to the center portion of the first opening is greater than the height h2 of the protrusion from the upper surface of the substrate 100 to other portions of the first opening.

[0190] As referenced above Figure 1The substrate 100 of the display device is bent about a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and at this time, the maximum tensile stress can be applied to the first conductive layer 215c at the center portion of the first bending region 1BA (i.e., the center portion of the first opening). Therefore, by increasing the height h1 of the protrusion from the upper surface of the substrate 100 to the center portion of the first opening to be greater than the height h2 of the protrusion from the upper surface of the substrate 100 to other portions of the first opening, the surface area of ​​the upper surface of the organic material layer 160 at the center portion of the first opening and the surface areas of the upper and lower surfaces of the first conductive layer 215c at the center portion of the first opening can be relatively larger than the surface areas of other portions of the first opening. The large surface areas of the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing the tensile stress caused by the bending of the substrate 100. Here, the point where the height h1 of the protrusion changes to the height h2 from the upper surface of the substrate 100 can be located within the first bending region 1BA.

[0191] In the portion of the first opening other than the central portion or the portion adjacent to the edge of the first opening, the height from the upper surface of the substrate 100 to the protrusion may differ from height h1 or height h2. Furthermore, the height from the upper surface of the substrate 100 to the protrusion may gradually decrease from the central portion of the first opening toward the edge of the first opening. This applies to other embodiments and their modifications described below.

[0192] As schematically shown is a portion of a display device according to an embodiment. Figure 8 As shown, Figure 6 and Figure 7 The example shown can also be applied to display devices.

[0193] For example, the distance d1 between adjacent protrusions at the center of the first opening is less than the distance d2 between protrusions in other parts of the first opening, and simultaneously, the height h1 from the upper surface of the substrate 100 to the protrusion at the center of the first opening can be greater than the height h2 from the upper surface of the substrate 100 to the protrusion in other parts of the first opening. Thus, the increase in the surface area of ​​the upper surface of the organic material layer 160 at the center of the first opening, and the surface area of ​​the upper and lower surfaces of the first conductive layer 215c at the center of the first opening, can be maximized, such that the surface area of ​​the upper layer at the center of the first opening can be relatively larger than the surface area of ​​other parts. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing tensile stress caused by bending of the substrate 100. In this case, the height of the protrusion or the distance between the protrusions can be gradually changed. Here, the point where the distance d1 between the protrusions changes to the distance d2 can be located within the first bending region 1BA.

[0194] Figure 9 This is a schematic cross-sectional view of a part of a display device according to an embodiment, and for example, a portion around a first opening in the first inorganic insulating layer. In the display device, the uneven surface 160a of the organic material layer 160 may have a plurality of protrusions in a second direction (+x direction) intersecting the first direction (+y direction). Here, the distance d2 between adjacent protrusions among the protrusions adjacent to the inner surface of the first opening may be smaller than the distance d1 between adjacent protrusions in other portions of the first opening.

[0195] As referenced above Figure 1 The substrate 100 of the display device is bent about a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and tensile stress can be applied to the organic material layer 160 and the first conductive layer 215c. For example, since the buffer layer 110, gate insulating layer 120, and / or interlayer insulating layer 130, which contains inorganic material and is referred to as the first inorganic insulating layer, have a first opening, the first inorganic insulating layer is not present in the first bending region 1BA. However, a portion of the organic material layer 160 adjacent to the inner surface of the first opening is in contact with or adjacent to the first inorganic insulating layer, and therefore, this portion of the organic material layer 160 may be affected by the first inorganic insulating layer, which has relatively high hardness, and may therefore be damaged due to tensile stress.

[0196] Therefore, by reducing the distance d2 between protrusions adjacent to the inner surface of the first opening to be smaller than the distance d1 between protrusions in other parts of the first opening, the surface area of ​​the upper surface of the organic material layer 160 adjacent to the inner surface of the first opening, and the surface areas of the upper and lower surfaces of the first conductive layer 215c adjacent to the inner surface of the first opening, can be relatively larger than the surface areas in other parts of the first opening. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing tensile stress caused by bending of the substrate 100. Here, the point where the distance d1 between the protrusions changes to the distance d2 can be located within the first bending region 1BA.

[0197] In the portion of the first opening other than the central portion or the portion adjacent to the edge of the first opening, the distance between adjacent protrusions may differ from distance d1 or distance d2. Furthermore, the distance between adjacent protrusions may gradually decrease from the central portion of the first opening toward the edge of the first opening.

[0198] The display device according to the embodiment may have Figure 6 and Figure 9 The examples shown all apply to the structure. For instance, the distance between adjacent protrusions at the center of the first opening and the distance between adjacent protrusions at the portion adjacent to the inner surface of the first opening can be smaller than the distance d2 between adjacent protrusions at other portions of the first opening.

[0199] Figure 10 This is a schematic cross-sectional view of a part of a display device according to an embodiment, and for example, a portion around a first opening in the first inorganic insulating layer. In the display device, as described above, the uneven surface 160a of the organic material layer 160 may have multiple protrusions in a second direction (+x direction) intersecting the first direction (+y direction). Here, the height h2 of the multiple protrusions from the upper surface of the substrate 100 to the portion adjacent to the inner surface of the first opening may be greater than the height h1 of the protrusions from the upper surface of the substrate 100 to other portions in the first opening.

[0200] As referenced above Figure 1The substrate 100 of the display device is bent about a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and tensile stress can be applied to the organic material layer 160 and the first conductive layer 215c. For example, since the buffer layer 110, gate insulating layer 120, and / or interlayer insulating layer 130, which contains inorganic material and is referred to as the first inorganic insulating layer, have a first opening, the first inorganic insulating layer is not present in the first bending region 1BA. However, a portion of the organic material layer 160 adjacent to the inner surface of the first opening is in contact with or adjacent to the first inorganic insulating layer, and therefore, this portion of the organic material layer 160 may be affected by the first inorganic insulating layer, which has relatively high hardness, and may therefore be damaged due to tensile stress.

[0201] Therefore, by setting the distance h2 from the upper surface of the substrate 100 to the portion of the protrusion adjacent to the inner surface of the first opening to be greater than the distance h1 from the upper surface of the substrate 100 to the protrusions in other portions of the first opening, the surface area of ​​the upper surface of the organic material layer 160 adjacent to the inner surface of the first opening, and the surface areas of the upper and lower surfaces of the first conductive layer 215c adjacent to the inner surface of the first opening, can be relatively larger than the surface areas of other portions of the first opening. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing the tensile stress caused by the bending of the substrate 100. Here, the point where the height h1 from the upper surface of the substrate 100 to the protrusion changes to the height h2 can be located within the first bending region 1BA.

[0202] In the portion of the first opening other than the central portion or the portion adjacent to the edge of the first opening, the height from the upper surface of the substrate 100 to the protrusion may differ from height h1 or height h2. Furthermore, the height from the upper surface of the substrate 100 to the protrusion may gradually increase from the central portion of the first opening toward the edge of the first opening. This applies to other embodiments and their modifications described below.

[0203] The display device according to the embodiment may have Figure 7 and Figure 10 The examples shown all use structures that are applied. For example, the height of the protrusion from the upper surface of the substrate 100 to the center portion of the first opening and the height of the protrusion from the upper surface of the substrate 100 to the portion adjacent to the inner surface of the first opening can be greater than the height of the protrusion from the upper surface of the substrate 100 to other portions of the first opening.

[0204] Additionally, as schematically shown, a portion of the display device according to an embodiment... Figure 11 As shown, it can be applied Figure 9 and Figure 10 The structures shown in both cases are as follows. For example, the distance d2 between adjacent protrusions at the portion adjacent to the inner surface of the first opening is less than the distance d1 between adjacent protrusions at other portions of the first opening. Furthermore, the height h2 of the protrusion from the upper surface of the substrate 100 to the portion adjacent to the inner surface of the first opening can be greater than the height h1 of the protrusion from the upper surface of the substrate 100 to other portions of the first opening. Thus, the increase in the surface area of ​​the upper surface of the organic material layer 160 at the central portion of the first opening and the surface area of ​​the upper and lower surfaces of the first conductive layer 215c at the portions adjacent to the inner surface of the opening can be maximized, such that the surface area of ​​the upper layer at the portion adjacent to the inner surface of the first opening can be relatively larger than the surface area of ​​other portions. The large surface area of ​​the upper surface of the organic material layer 160 and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing tensile stress caused by bending of the substrate 100. In this case, the height of the protrusion or the distance between the protrusions can be gradually changed.

[0205] Figure 12 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. (e.g.) Figure 12 As shown, SNL 600 includes an uneven surface 600a on at least a portion of its upper surface. The uneven surface 600a may at least correspond to the first curved region 1BA, or may have an area larger than the first curved region 1BA. Here, the uneven surface 600a of SNL 600 may have a shape corresponding to the shape of the uneven surface 160a of the organic material layer 160.

[0206] As described above, SNL 600 can adjust the position of the stress-neutral surface in the stacked structure including substrate 100, first conductive layer 215c, and SNL 600. Therefore, SNL 600 can allow the stress-neutral surface to be positioned around the first conductive layer 215c to reduce the tensile stress applied to the first conductive layer 215c. Here, as... Figure 12 As shown, since the uneven surface 600a of SNL 600 has a shape corresponding to the shape of the uneven surface 160a of the organic material layer 160, the stress neutral surface can be precisely located on the first conductive layer 215c, which has a shape corresponding to the uneven surface 160a of the organic material layer 160. Therefore, the tensile stress applied to the first conductive layer 215c when the substrate 100 is bent at the first bending region 1BA can be reduced, thereby preventing or reducing the occurrence of defects in the first conductive layer 215c.

[0207] SNL 600 is formed from organic materials and can be formed through a variety of methods.

[0208] For example, such as Figure 13 As shown, a first portion 601, extending along the edge of the substrate 100 in the y-axis direction and corresponding to a first protrusion on a non-uniform surface 160a of the organic material layer 160, is formed by inkjet printing, jetting, or dotting, and then ultraviolet (UV) rays are irradiated onto the first portion 601 to harden it. Additionally, as... Figure 14 As shown, a second portion 602 is formed extending along the edge of the substrate 100 in the y-axis direction to correspond to the second protrusion (adjacent to the first protrusion) in the protrusions of the uneven surface 160a of the organic material layer 160. UV rays can then be irradiated onto the second portion 602 to harden it. Here, the contact portion between the first portion 601 and the second portion 602 is a recess, and both the first portion 601 and the second portion 602 have convex portions at their central portions. When the first portion 601 and the second portion 602 are formed, the central portions of the first portion 601 and the second portion 602 are convex due to the properties of the organic material included in the first portion 601 and the second portion 602. By repeating the above process, as... Figure 15 As shown, the uneven surface 600a of SNL 600 can correspond to the uneven surface 160a of the organic material layer 160. However, with Figure 15 The example shown is different because the first and second parts are formed using the same organic material, so there may be no boundary between the first and second parts.

[0209] Additionally, the organic material used to form SNL 600 is located on the first conductive layer 215c to at least correspond to the first bending region 1BA, and as... Figure 16 As shown, a mold M having a lower surface corresponding to the uneven surface 160a of the organic material layer 160 can contact the organic material used to form SNL 600. In this state, UV rays are irradiated onto the organic material used to form SNL 600 to harden the organic material, and then the mold M is removed. Thus, the uneven surface 600a of SNL 600 can correspond to the uneven surface 160a of the organic material layer 160. If necessary, before contacting the mold M with the organic material used to form SNL 600, UV rays are irradiated onto the organic material used to form SNL 600 to harden the organic material for the first time, and after this, the lower surface of the mold M contacts the organic material used to form SNL 600. Then, UV rays are irradiated onto the organic material used to form SNL 600 again to harden the organic material for the second time, and then the mold M is removed.

[0210] Figures 13 to 16 as well as Figure 12 The display device according to the embodiment is shown schematically, and therefore, for the sake of convenience of description, the thickness of the components may be exaggerated or simplified, and this is the same in one or more embodiments and their modified examples described below.

[0211] Despite Figure 12 The uneven surface 600a of the SNL 600 shown can precisely correspond to the uneven surface 160a of the organic material layer 160, but as Figure 17 The uneven surface 600a of SNL 600 shown can roughly correspond to the uneven surface 160a of the organic material layer 160, wherein, Figure 17 This is a schematic cross-sectional view of a display device according to an embodiment.

[0212] For example, such as Figure 17 As shown, the spacing between protrusions on the uneven surface 600a of SNL 600 can be an integer multiple, for example, twice the spacing between protrusions on the uneven surface 160a of organic material layer 160. In this case, all the protrusions on the uneven surface 600a of SNL 600 correspond to at least some of the protrusions on the uneven surface 160a of organic material layer 160, and therefore, the tensile stress applied to the first conductive layer 215c during bending of the substrate 100 at the first bending region 1BA can be reduced. Thus, the occurrence of defects in the first conductive layer 215c can be reduced or prevented. Conversely, the spacing between protrusions on the uneven surface 160a of organic material layer 160 can be an integer multiple the spacing between protrusions on the uneven surface 600a of SNL 600. In this configuration, all the protrusions on the uneven surface 160a of the organic material layer 160 correspond to at least some of the protrusions on the uneven surface 600a of the SNL 600, and therefore, the tensile stress applied to the first conductive layer 215c during bending of the substrate 100 at the first bending region 1BA can be reduced. Thus, the occurrence of defects in the first conductive layer 215c can be reduced or prevented.

[0213] In addition, such as Figure 12 As shown, the upper surface of the planarization layer 140 can be flat, or it can have a surface like... Figure 18 The uneven surface 140a shown is... Figure 18 This is a schematic cross-sectional view of a part of the display device according to an embodiment. The method of forming an uneven surface 140a on the upper surface of the planarization layer 140 can be the same as / similar to the method of forming an uneven surface 160a on the upper surface of the organic material layer 160.

[0214] The above references Figures 12 to 18The structure of the SNL 600 described herein can be applied to display devices according to the above embodiments and other embodiments described below.

[0215] Up to now, the first inorganic insulating layer has been described as having an opening, but one or more embodiments are not limited to this. For example, the first inorganic insulating layer may not include a first opening that completely penetrates the first inorganic insulating layer, but may instead include a first groove at a location corresponding to the first curved region 1BA. Figure 19 This is a schematic cross-sectional view of a part of a display device according to an embodiment.

[0216] like Figure 19 As shown, the buffer layer 110 can be continuously formed throughout the entire first region 1A, the first curved region 1BA, and the second region 2A. Additionally, the gate insulating layer 120 includes an opening 120a corresponding to the first curved region 1BA, and the interlayer insulating layer 130 similarly includes an opening 130a corresponding to the first curved region 1BA. Therefore, the first inorganic insulating layer including the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 can be described as having a first groove corresponding to the first curved region 1BA. The first inorganic insulating layer can include different types of first grooves. For example, the upper surface of the buffer layer 110 (in the +z direction) can be partially removed, or the lower surface of the gate insulating layer 120 (in the -z direction) can be left unremoved.

[0217] The first groove corresponds to the first curved region 1BA, which can be interpreted as the first groove overlapping the first curved region 1BA. Here, the area of ​​the first groove can be larger than the area of ​​the first curved region 1BA. Therefore, the width GW of the first groove is shown to be greater than... Figure 19 The width of the first curved region 1BA in the middle. Here, the area of ​​the first groove can be defined as the area of ​​the opening with the smallest area among the opening 120a of the gate insulating layer 120 and the opening 130a of the interlayer insulating layer 130. In Figure 20 In the first groove, the area is defined by the area of ​​the opening 120a in the gate insulating layer 120.

[0218] In the display device, the organic material layer 160 may at least partially fill the first groove. Additionally, the first conductive layer 215c is located on the organic material layer 160 in the region where the organic material layer 160 is formed.

[0219] exist Figure 19 In this description, for ease of depiction, the display device is not shown in a bent state, but the substrate 100 in the display device according to the embodiment is actually as shown. Figure 1 The display device is bent at the first bending region 1BA, as shown. For this purpose, the substrate 100 is flat, and the display device is manufactured as follows: Figure 19As shown, and thereafter, the substrate 100 bends at the first bending region 1BA, so that the display device can be positioned... Figure 1 The state is shown. Here, when the substrate 100 is bent at the first bending region 1BA, tensile stress can be applied to the first conductive layer 215c. However, in the display device, the first inorganic insulating layer includes a first groove corresponding to the first bending region 1BA, and the portion of the first conductive layer 215c corresponding to the first bending region 1BA is located on the organic material layer 160 that at least partially fills the first groove of the first inorganic insulating layer. Therefore, cracks can be prevented from appearing in the portion of the first conductive layer 215c located on the organic material layer 160 (which corresponds to the first bending region 1BA), or the possibility of cracks can be reduced.

[0220] Furthermore, the above description regarding the case where the first inorganic insulating layer includes a first opening can be applied to the case where the first inorganic insulating layer has a first groove. For example, the organic material layer 160 may cover the inner surface of the first groove. Additionally, the organic material layer 160 may have a non-uniform surface 160a within the first groove, at least partially located on its upper surface. Furthermore, the area of ​​the non-uniform surface 160a in the organic material layer 160 may be larger than the area of ​​the first curved region 1BA, and may be smaller than the area of ​​the first groove. (See reference...) Figures 6 to 10 The above description regarding the spacing or height of the protrusions on the uneven surface 160a of the organic material layer 160 can also be applied to the case where the first inorganic insulating layer includes the first groove. Additionally, for ease of description, the case where the first inorganic insulating layer includes the first opening will be described below, but the following description can also be applied to the case where the first inorganic insulating layer includes the first groove.

[0221] Figure 20 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. In the display device, the organic material layer 160 includes a plurality of islands 160b. The islands 160b extend in a first direction (+y direction) and are spaced apart from each other in a second direction (+x direction). A first conductive layer 215c covers the islands 160b, and therefore, the first conductive layer 215c located on the islands 160b has an upper surface corresponding to the shape of the islands 160b. Consequently, the surface area of ​​the upper surface (+z direction) of the first conductive layer 215c is increased.

[0222] During the manufacturing process, the substrate 100 is bent at the first bending region 1BA, and then tensile stress can be applied to the first conductive layer 215c. Therefore, when the upper and / or lower surfaces of the first conductive layer 215c can have a shape corresponding to the islands 160b of the organic material layer 160, the amount of tensile stress applied to the first conductive layer 215c can be reduced. That is, the tensile stress that may occur during the bending process can be reduced by the deformation of the islands 160b of the organic material layer 160, which have relatively low strength. Here, the shape of the first conductive layer 215c, which has an uneven shape at least before the bending process, is deformed to correspond to the shape of the organic material layer 160 that has already been deformed due to the bending process, and therefore, defects such as breaks in the first conductive layer 215c can be effectively prevented.

[0223] Since the first conductive layer 215c is located on the organic material layer 160, the lower surface of the first conductive layer 215c corresponds to the island 160b of the organic material layer 160. However, the upper surface of the first conductive layer 215c may have an uneven surface, but the uneven surface may be formed independently of the island 160b of the organic material layer 160.

[0224] For example, a conductive material layer is formed on the organic material layer 160, and photoresist is applied to the conductive material layer. The photoresist is then developed, thereby varying the exposure amount according to the position of the photoresist using a slit mask or a halftone mask, and thus, the exposed conductive material layer is etched, and the photoresist is removed to form a first conductive layer 215c. Since the exposure amount varies according to the position of the photoresist using a slit mask or a halftone mask, the conductive material layer has an etch degree that varies according to its position. Therefore, an uneven surface can be artificially formed on the upper surface of the first conductive layer 215c in the manner described above, and in this case, the uneven surface of the upper surface of the first conductive layer 215c can have a shape that does not correspond to the island 160b of the organic material layer 160. This will apply to the embodiments and their modified examples described below. However, even when performing the process of artificially forming an uneven surface on the upper surface of the first conductive layer 215c, the uneven surface of the first conductive layer 215c can still correspond to the island 160b of the organic material layer 160.

[0225] Figure 21 This is a schematic cross-sectional view of a part of a display device according to an embodiment, and for example, a portion around a first opening in the first inorganic insulating layer. In the display device, the islands 160b of the organic material layer 160 are spaced apart from each other in a second direction (+x direction) as described above. Here, the distance d1 between adjacent islands 160b in the central portion of the first opening is smaller than the distance d2 between adjacent islands 160b in other portions of the first opening.

[0226] As referenced above Figure 1 The substrate 100 of the display device is bent about a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and at this time, the maximum tensile stress can be applied to the first conductive layer 215c at the central portion of the first bending region 1BA (i.e., the central portion of the first opening). Therefore, when the distance d1 between the islands 160b at the central portion of the first opening is less than the distance d2 between the islands 160b at other portions of the first opening, the surface area of ​​the islands 160b at the central portion of the first opening, as well as the surface areas of the upper and lower surfaces of the first conductive layer 215c at the central portion of the first opening, can be relatively larger than the surface areas of other portions of the first opening. The large surface areas of the islands 160b and the upper and lower surfaces of the first conductive layer 215c can represent a large deformation margin for reducing the tensile stress caused by the bending of the substrate 100.

[0227] Figure 22 This is a schematic cross-sectional view of a part of a display device according to an embodiment, and for example, a portion around a first opening in a first inorganic insulating layer. In the display device, the height h1 of the island 160b from the upper surface of the substrate 100 to the center portion of the first opening is greater than the height h2 of the plurality of islands 160b from the upper surface of the substrate 100 to other portions of the first opening.

[0228] As referenced above Figure 1 The substrate 100 of the display device is bent around a first bending axis 1BAX extending in a first direction (+y direction). Therefore, the substrate 100, the organic material layer 160, and the first conductive layer 215c are bent at the first bending region 1BA, and at this time, the maximum tensile stress can be applied to the first conductive layer 215c at the center portion of the first bending region 1BA (i.e., the center portion of the first opening). Therefore, when the height h1 of the island 160b from the upper surface of the substrate 100 to the center portion of the first opening is greater than the height h2 of the island 160b from the upper surface of the substrate 100 to other portions of the first opening, the surface area of ​​the island 160b at the center portion of the first opening, as well as the surface areas of the upper and lower surfaces of the first conductive layer 215c at the center portion of the first opening, can be relatively larger than the surface areas of other portions of the first opening.

[0229] In addition, such as Figure 23 As shown, Figure 23 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. The display device may further include a protective film 170 for protecting the substrate 100. The protective film 170 is a lower protective film for protecting the lower surface of the substrate 100, and as... Figure 23 As shown, the protective film 170 may include an opening 170OP. The opening 170OP corresponds to the first curved region 1BA, and the area of ​​the opening 170OP may be larger than the area of ​​the first curved region 1BA. Figure 23 In the middle, the width of the opening 170OP is greater than the width of the first curved region 1BA.

[0230] Because the protective film 170 protects the lower surface of the substrate 100, the protective film 170 can possess inherent strength. Therefore, if the protective film 170 has a low level of flexibility, it may separate from the substrate 100 when the substrate 100 is bent. Thus, as... Figure 23 As shown, when the protective film 170 includes an opening 170OP corresponding to the first curved region 1BA, separation between the protective film 170 and the substrate 100 can be effectively prevented. Therefore, as described above, the area of ​​the opening 170OP of the protective film 170 needs to be larger than the area of ​​the first curved region 1BA.

[0231] However, considering that the protective film 170 must protect the lower surface of the substrate 100 as much as possible, the area of ​​the opening 170OP in the protective film 170 needs to be reduced. Therefore, the area of ​​the opening 170OP in the protective film 170 can be larger than the area of ​​the first curved region 1BA, and simultaneously smaller than the area of ​​the first opening in the first inorganic insulating layer. Furthermore, the area of ​​the opening 170OP in the protective film 170 can be smaller than the area of ​​the uneven surface 160a of the organic material layer 160. Therefore, in Figure 23 In this process, the width of the opening 170OP is greater than the width of the first curved region 1BA, while the width of the opening 170OP is less than the width OW of the first opening in the first inorganic insulating layer and the width UEW of the uneven surface 160a of the organic material layer 160. The protective film 170 having the above-described shape can be applied to display devices according to the foregoing embodiments and other embodiments described below.

[0232] If needed, with Figure 23 The protective film 170 shown is different; the protective film 170 may not cover the edge of the substrate 100. That is, the protective film 170 may not be present on the second region 2A.

[0233] So far, the above has described an example in which the first conductive layer 215c and the source electrode 215a or drain electrode 215b in the TFT 210 are formed of the same material and are formed simultaneously, but one or more embodiments are not limited thereto.

[0234] For example, a schematic cross-sectional view that is part of a display device according to an embodiment. Figure 24As shown, touch electrodes 710 with various patterns can be located on the encapsulation layer 400 used to implement touch sensing functionality. That is, touch electrodes 710 can be part of the touch sensing layer. When forming touch electrodes 710, the first conductive layer 215c can be formed simultaneously using the same material as the touch electrode 710. Furthermore, when forming a touch protective layer 720 to protect the touch electrodes 710, a protective layer covering the first conductive layer 215c can be formed simultaneously. If necessary, such as... Figure 24 As shown, the touch protective layer 720 can extend integrally from the display area DA to at least the first curved area 1BA. As described above, the structure of forming the first conductive layer 215c simultaneously with the touch electrode 710 can be applied to the display device described above or below. Unlike the above example, the first conductive layer 215c can be formed simultaneously with the opposite electrode 330 using the same material as the opposite electrode 330.

[0235] Furthermore, the organic material layer 160 can be formed simultaneously with the planarization layer 140 using the same material as the planarization layer 140. If desired, the organic material layer 160 can be formed in a separate process, without considering the planarization layer 140. Additionally, as shown in the schematic cross-sectional view as part of the display device according to the embodiment... Figure 25 As shown, the organic material layer 160 can be formed simultaneously with the organic encapsulation layer 420 using the same material as the organic encapsulation layer 420 in the encapsulation layer 400.

[0236] The organic material layer 160 can be formed simultaneously with other layers, except for the planarization layer 140, using the same material. For example, as shown in a schematic cross-sectional view as part of a display device according to an embodiment. Figure 26 As shown, when the interlayer insulation layer 130 comprises an organic insulating material, the organic material layer 160 can be formed simultaneously with the interlayer insulation layer 130 using the same material as the interlayer insulation layer 130. Because Figure 26 This is a cross-sectional view, so the interlayer insulating layer 130 and the organic material layer 160 are shown as separate layers due to the contact holes, wherein the first conductive layer 215c is connected to the second conductive layers 213a and 213b through the contact holes. However, except for the area forming the contact holes, the interlayer insulating layer 130 and the organic material layer 160 can be integrally formed with each other.

[0237] As described above, when the interlayer insulating layer 130 is formed of an organic material, the structure in which the organic material layer 160 and the interlayer insulating layer 130 are formed simultaneously can be applied to other display devices described above or to be described below. Here, as Figure 26As shown, the first conductive layer 215c can be formed simultaneously with the touch electrode 710 using the same material as the touch electrode 710. In this case, as... Figure 26 As shown, the touch protective layer 720 may cover the first conductive layer 215c. Additionally, an organic insulating layer besides the touch protective layer 720 may be necessary to achieve the touch sensing function. For example, an additional touch electrode may be formed in addition to the touch electrode 710, and an organic insulating layer may be inserted between the touch electrode 710 and the additional touch electrode. In this case, the organic insulating layer may extend to cover the first conductive layer 215c, or it may cover the first conductive layer 215c by using a layer formed simultaneously with the organic insulating layer using the same material.

[0238] The first conductive layer 215c can be modified in different ways. For example, the first conductive layer 215c can be formed simultaneously with the source electrode 215a or the drain electrode 215b, but not simultaneously with the touch electrode 710. Alternatively, in this case, the first conductive layer 215c can be covered by the planarization layer 140 or another insulating layer.

[0239] So far, the first inorganic insulating layer has been described as including a gate insulating layer 120 inserted between the semiconductor layer 211 and the gate electrode 213; however, one or more embodiments are not limited thereto. For example, a schematic cross-sectional view as part of a display device according to an embodiment is shown. Figure 27 As shown, the first inorganic insulating layer may consist only of a buffer layer 110 disposed between the TFT 210 and the substrate 100. In this case, the buffer layer 110 includes an opening 110a, which may be referred to as the first opening. Additionally, the gate insulating layer 120 may be used as the organic material layer 160 described in the foregoing embodiments. That is, the gate insulating layer 120 may include an insulating organic material.

[0240] In this case, such as Figure 27 As shown, the gate insulating layer 120 may have a non-uniform surface 120b in at least a portion of its upper surface within the first opening. The shape of the non-uniform surface 120b of the gate insulating layer 120 and the spacing or height of the plurality of protrusions included in the non-uniform surface 120b can be determined using a reference. Figures 6 to 10 The description pertains to the shape of the uneven surface 160a of the organic material layer 160, the spacing and height of the protrusions in the uneven surface 160a. Furthermore, similar descriptions include... Figure 20 The organic material layer 160, with its spaced-apart islands 160b, shown in the diagram, and the gate insulating layer 120, may include a plurality of spaced-apart islands, which is different from... Figure 27 The example shown. In this case, regarding the reference above... Figure 21 and Figure 22The description of the spacing or height of the islands 160b can be applied to the islands of the gate insulation layer 120.

[0241] As mentioned above, such as Figure 27 As shown, when the gate insulating layer 120 is used as an organic material layer, the first conductive layer 215c can be formed simultaneously with the source electrode 215a or the drain electrode 215b using the same material as the source electrode 215a or the drain electrode 215b. (See reference...) Figures 24 to 26 As shown, if a touch electrode 710 with multiple patterns is located on the encapsulation layer 400 covering the OLED 300 for the purpose of implementing touch sensing function, the first conductive layer 215c can be formed with the touch electrode 710 using the same material as the touch electrode 710.

[0242] Figure 28 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. In addition to TFT 210, the display device may include a TFT 210' located on the display area DA. TFT 210' may include a semiconductor layer 211', a source electrode 215a', a drain electrode 215b', and a gate electrode 213'. Here, the semiconductor layer 211' may include the same material as the semiconductor layer 211 and may be located at the same layer level as the semiconductor layer 211. The source electrode 215a' and drain electrode 215b' may also include the same material as the source electrode 215a and drain electrode 215b, and may be located at the same layer level as the source electrode 215a and drain electrode 215b. However, the gate electrode 213' may be located at a different layer level than the gate electrode 213.

[0243] For example, gate insulating layer 120' is located on gate insulating layer 120, and source electrode 215a, drain electrode 215b, source electrode 215a', and drain electrode 215b' may be located on interlayer insulating layer 130 covering gate insulating layer 120'. Additionally, gate electrode 213 is located on gate insulating layer 120, gate insulating layer 120' covers gate electrode 213, and gate electrode 213' may be located on gate insulating layer 120'. Here, buffer layer 110 and gate insulating layer 120 respectively include openings 110a and 120a, and gate insulating layer 120' may be used as the organic material layer 160 described above with reference to the foregoing embodiments. That is, gate insulating layer 120' may include insulating organic material.

[0244] In this case, such as Figure 28 As shown, the gate insulating layer 120' may have a non-uniform surface 120'a in at least a portion of its upper surface within the first opening. The shape of the non-uniform surface 120'a of the gate insulating layer 120' and the spacing or height of the plurality of protrusions in the non-uniform surface 120'a can be obtained using the above reference. Figures 6 to 10The description describes the shape of the uneven surface 160a of the organic material layer 160 and the spacing or height of the protrusions in the uneven surface 160a. Additionally, similar to... Figure 20 The islands 160b shown are spaced apart from each other in the organic material layer 160. The gate insulating layer 120' may include a plurality of islands spaced apart from each other, which is different from the islands 160b shown in the organic material layer 160. Figure 28 The example shown. In this case, the above reference... Figure 21 and Figure 22 The description of the spacing or height of island 160b can be applied to islands of gate insulation layer 120'.

[0245] In the above structure, such as Figure 28 As shown, when the source electrode 215a or the drain electrode 215b is formed, the first conductive layer 215c can be formed simultaneously. However, one or more embodiments are not limited to this, and the first conductive layer 215c can be formed simultaneously with the gate electrode 213' using the same material as the gate electrode 213'. Furthermore, as referenced above... Figures 24 to 26 As described, when the touch electrode 710 with multiple patterns for implementing touch sensing function is located on the encapsulation layer 400 covering the OLED 300, the first conductive layer 215c can be formed simultaneously with the touch electrode 710 using the same material as the touch electrode 710.

[0246] exist Figure 28 In the illustrated embodiment, the interlayer insulating layer 130 is located on the gate insulating layer 120', which serves as an organic material layer, and therefore, the interlayer insulating layer 130 includes an opening 130a corresponding to a first opening of the first inorganic insulating layer comprising the buffer layer 110 and the gate insulating layer 120. This aforementioned interlayer insulating layer can be defined as a second inorganic insulating layer, and the opening 130a can be defined as a second opening of the second inorganic insulating layer.

[0247] Figure 29 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. The display device is... Figure 28 The difference in the display device shown is that the first conductive layer 215c is formed simultaneously with the gate electrode 213' by using the same material as the gate electrode 213' instead of the same material as the source electrode 215a or the drain electrode 215b.

[0248] Since the gate electrode 213' is located on the gate insulating layer 120' covering the gate electrode 213, a first conductive layer 215c, formed simultaneously with the gate electrode 213' using the same material as the gate electrode 213', is located on the uneven surface 120'a of the second conductive layers 213a and 213b and the gate insulating layer 120' containing organic material, wherein the second conductive layers 213a and 213b are formed simultaneously with the gate electrode 213 using the same material as the gate electrode 213. Here, if necessary, the interlayer insulating layer 130 can cover a portion of the first conductive layer 215c. The interlayer insulating layer 130 includes an opening 130a corresponding to the opening 110a of the buffer layer 110 and the opening 120a of the gate insulating layer 120, making it easy to bend in the first bending region 1BA.

[0249] As described above, the location, material, and method of forming the first conductive layer 215c can be modified in different ways.

[0250] Figure 30 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. Given that an additional conductive layer 215d is also included on the first conductive layer 215c, the display device of this embodiment is similar to the one described above. Figure 29 The described display device differs. As described above, when the first conductive layer 215c is formed simultaneously with the gate electrode 213' using the same material as the gate electrode 213', the additional conductive layer 215d can be formed simultaneously with the source electrode 215a or the drain electrode 215b using the same material as the source electrode 215a or the drain electrode 215b. The additional conductive layer 215d can be located on the first conductive layer 215c in the first bending region 1BA so as to be electrically connected to the first conductive layer 215c.

[0251] In the display device, since the first conductive layer 215c and the additional conductive layer 215d are present on the first curved region 1BA, a multilayer conductive layer structure is formed on the first curved region 1BA. Therefore, even if a defect such as a crack appears in the first conductive layer 215c on the first curved region 1BA, an electrical signal can still be transmitted to the display region DA via the additional conductive layer 215d. Furthermore, even if a defect such as a crack appears in the additional conductive layer 215d, an electrical signal can still be transmitted to the display region DA via the first conductive layer 215c.

[0252] As described above, the organic material layer 160 is described as being formed simultaneously with the gate insulating layer 120, the gate insulating layer 120', the interlayer insulating layer 130, and / or the planarization layer 140. However, one or more embodiments are not limited thereto. For example, the organic material layer 160 may be formed by a process separate from the process of forming the gate insulating layer 120, the gate insulating layer 120', the interlayer insulating layer 130, and / or the planarization layer 140. Furthermore, even when the gate insulating layer 120, the gate insulating layer 120', the interlayer insulating layer 130, and / or the planarization layer 140 comprises an organic material, the organic material layer 160 may also comprise a material different from the material of the gate insulating layer 120, the gate insulating layer 120', the interlayer insulating layer 130, and / or the planarization layer 140.

[0253] Figure 31 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. The display device according to the embodiment is referenced above. Figure 30 The difference in the described display device is that the interlayer insulating layer 130 is disposed between the first conductive layer 215c and the additional conductive layer 215d. Here, since the interlayer insulating layer 130 comprises an insulating organic material, damage to the interlayer insulating layer 130, the first conductive layer 215c, and / or the additional conductive layer 215d due to the bending process can be prevented even when the interlayer insulating layer 130 is present in the first bending region 1BA.

[0254] Furthermore, the additional conductive layer 215d on the interlayer insulating layer 130 is electrically connected to the first conductive layer 215c below the interlayer insulating layer 130 via contact holes formed on the outer portion of the first curved region 1BA. Therefore, even if a defect such as a crack appears in the first conductive layer 215c on the first curved region 1BA, an electrical signal can still be transmitted to the display area DA via the additional conductive layer 215d. Similarly, even if a defect such as a crack appears in the additional conductive layer 215d, an electrical signal can still be transmitted to the display area DA via the first conductive layer 215c. Moreover, since the interlayer insulating layer 130 is disposed between the first conductive layer 215c and the additional conductive layer 215d, cracks appearing in one of the first conductive layer 215c and the additional conductive layer 215d can be effectively prevented from growing into the other layer.

[0255] Reference Figure 30 and Figure 31In the described structure, the widths of the first conductive layer 215c and the additional conductive layer 215d in the first direction (+y direction) can be different from each other. For example, the first conductive layer 215c and the additional conductive layer 215d can comprise different materials, and therefore, the flexibility (elongation) of the material forming the first conductive layer 215c and the flexibility (elongation) of the material forming the additional conductive layer 215d can be different from each other. A larger flexibility (elongation) indicates a lower probability of breakage even when tensile stress is applied. Therefore, of the first conductive layer 215c and the additional conductive layer 215d, the one comprising a material having a relatively larger flexibility (elongation) than the other can have a smaller width than the other.

[0256] Figure 32 This is a schematic cross-sectional view of a portion of a display device according to an embodiment. Given that a protective layer 180 covering the TFT 210 is also included, the display device according to the embodiment is similar to the one referenced above. Figure 2 The described display device differs. The protective layer 180 may cover a lower layer, such as the interlayer insulating layer 130, on the portion where the TFT 210 is not present. The protective layer 180 may comprise inorganic materials such as silicon nitride, silicon oxide, and / or silicon oxynitride, and may have a single-layer or multi-layer structure. As described above, since the buffer layer 110, gate insulating layer 120, and interlayer insulating layer 130, which include inorganic materials, can be referred to as inorganic insulating layers, the protective layer 180, which includes inorganic materials, can be referred to as an additional inorganic insulating layer.

[0257] As described above, the protective layer 180 (e.g., an additional inorganic insulating layer) can cover most of the first region 1A and the second region 2A on the substrate 100, and includes an additional opening 180a corresponding to the first curved region 1BA. Here, the correspondence between the additional opening 180a and the first curved region 1BA can mean that the additional opening 180a overlaps with the first curved region 1BA. Here, the area of ​​the additional opening 180a can be larger than the area of ​​the first curved region 1BA. Therefore, in Figure 32 In the diagram, the width of the additional opening 180a is shown to be greater than the width of the first curved region 1BA.

[0258] As mentioned above, Figure 32 The display device shown is not in a bent state, but it is actually bent, that is, the substrate 100 is as follows: Figure 1 The substrate 100 is bent at the first bending region 1BA, as shown. Therefore, the display device is manufactured such that the substrate 100 is... Figure 32 As shown, the substrate is flat. After this, the substrate 100 is bent at the first bending region 1BA, so that the display device has... Figure 1 The shape shown.

[0259] If the protective layer 180 does not include the additional opening 180a and is located on the first conductive layer 215c in the first bending region 1BA, tensile stress may be applied to the protective layer 180 in the first bending region 1BA during bending of the substrate 100 at the first bending region 1BA, and then cracks may appear in the protective layer 180. When cracks appear in the protective layer 180, the cracks may extend to the first conductive layer 215c covered by the protective layer 180, and therefore may greatly increase the likelihood of defects such as breaks appearing in the first conductive layer 215c.

[0260] However, in the display device according to the embodiment, the protective layer 180 (i.e., the additional inorganic insulating layer) includes an additional opening 180a corresponding to the first bending region 1BA. Therefore, damage to the first conductive layer 215c can be prevented or reduced.

[0261] Figure 33 It is a section taken along the first bending axis 1BAX in the first bending region 1BA. Figure 32 A schematic cross-section of the display device. Based on Figure 1 , Figure 33 This can be understood as showing a portion of a cross-section of the display device taken along a plane parallel to the xy plane and including the first bending axis 1BAX on the first bending region 1BA. For example... Figure 33 As shown, the protective layer 180 may not be present within the first bending region 1BA. Figure 33 In this structure, there are multiple first conductive layers 215c, and therefore, the display device may include multiple first conductive layers 215c as wiring extending in one direction. As described above, the protective layer 180 may not be present in the first bending region 1BA, but is not limited thereto.

[0262] For example, a schematic cross-sectional view that is part of a display device according to an embodiment. Figure 34 As shown, the protective layer 180 may be formed in the first bending region 1BA. That is, the protective layer 180 (e.g., an additional inorganic insulating layer) has an additional opening 180a corresponding to the first bending region 1BA, indicating that the additional opening 180a corresponds to the first bending region 1BA, and it is not limited to the protective layer 180 not being present on the first bending region 1BA.

[0263] Here, as Figure 34 As shown, the additional opening 180a can correspond to the first conductive layer 215c within the first curved region 1BA. For example, the additional opening 180a can overlap with the first conductive layer 215c in the first curved region 1BA. Figure 34 In the middle, the additional opening 180a largely overlaps with the upper surface of the first conductive layer 215c, so that the protective layer 180 can cover the edge of the first conductive layer 215c.

[0264] In the display device according to the embodiment, a large portion of the upper surface of the first conductive layer 215c may not be covered by the protective layer 180. Therefore, even if tensile stress is applied to the protective layer 180 in the first bending region 1BA during bending of the substrate 100 at the first bending region 1BA and cracks may appear in the protective layer 180, the likelihood of cracks extending to the first conductive layer 215c and causing damage to the first conductive layer 215c can be reduced. In the first bending region 1BA, the organic material layer 160 is located below the protective layer 180, and the planarization layer 140 including the organic material is located on the protective layer 180. Therefore, even if cracks appear in the protective layer 180 in the first bending region 1BA, the extension of cracks towards the upper and / or lower portions of the protective layer 180 can be prevented.

[0265] One or more embodiments are not limited to the examples described above, i.e., such as the schematic cross-sectional view that is part of a display device according to an embodiment. Figure 35 As shown, the area of ​​the additional opening 180a can be larger than the area of ​​the upper surface of the first conductive layer 215c within the first bending region 1BA, so that the first conductive layer 215c can be left uncovered by the protective layer 180 within the first bending region 1BA. In this case, as... Figure 35 As shown, within the first bending region 1BA, the protective layer 180 can at least partially cover the upper surface of the organic material layer 160 on the outer portion of the first conductive layer 215c.

[0266] A schematic cross-sectional view, as part of a display device according to an embodiment. Figure 36 As shown, an upper conductive layer 215c' located at a different level from the first conductive layer 215c can exist in the first bending region 1BA. The upper conductive layer 215c' can be a wiring extending in the same or similar direction as the first conductive layer 215c. Additionally, the protective layer can have a dual-layer structure comprising a first protective layer 181 containing inorganic material and a second protective layer 182 containing inorganic material. The first protective layer 181 and the second protective layer 182 comprise the same material as the protective layer 180. Figure 36 In this structure, the first conductive layer 215c and the first protective layer 181 are covered by the first planarization layer 141, and the upper conductive layer 215c' and the second protective layer 182 are located on the first planarization layer 141. Furthermore, the upper conductive layer 215c' and the second protective layer 182 are covered by the second planarization layer 142.

[0267] In the display device according to the embodiment, in the first bending region 1BA, the first protective layer 181 does not cover the first conductive layer 215c, and the second protective layer 182 does not cover the upper conductive layer 215c', and thus damage to the first conductive layer 215c and / or the upper conductive layer 215c' due to bending can be prevented or reduced. However, similar to the above reference... Figure 34 As described, the first protective layer 181 may cover the edge of the first conductive layer 215c, and the second protective layer 182 may cover the edge of the upper conductive layer 215c'. Additionally, as shown in the schematic cross-sectional view that is part of the display device according to the embodiment... Figure 37 As shown, the first protective layer 181 and the second protective layer 182 may not exist within the first bending region 1BA.

[0268] Additionally, as shown in the schematic cross-sectional view that is part of the display device according to the embodiment. Figure 38 As shown, the additional opening 180a of the protective layer 180, which serves as an additional inorganic insulating layer, not only corresponds to the first bending region 1BA, but can also have an area larger than that of the first opening in the inorganic insulating layer. Figure 38 In this case, the width AOW of the additional opening 180a is greater than the width OW of the first opening. As mentioned above, although Figure 38 The display device is described as unbent, but the display device according to the embodiment is actually bent, that is, the substrate 100 is bent at the first bending region 1BA. When the substrate 100 is bent at the first bending region 1BA, a relatively large tensile stress can be applied to the inorganic insulating layer located at a higher level than the inorganic insulating layer located at a lower level. Therefore, when the area of ​​the additional opening 180a of the protective layer 180 is sufficiently larger than the area of ​​the first opening in the inorganic insulating layer, damage to the protective layer 180 located above the inorganic insulating layer can be prevented or reduced. However, one or more embodiments are not limited thereto, that is, if necessary, such as Figure 32 As shown, the area of ​​the additional opening 180a in the protective layer 180 can be smaller than the area of ​​the first opening in the inorganic insulating layer.

[0269] exist Figure 32 and Figure 38 In this embodiment, the inner surface of the opening 110a in the buffer layer 110 and the inner surface of the opening 120a in the gate insulating layer 120 correspond to each other, but are not limited thereto. For example, as shown in the schematic cross-sectional view that is part of the display device according to the embodiment. Figure 39As shown, the opening 110a in the buffer layer 110 can have an area smaller than the area of ​​the opening 120a in the gate insulating layer 120. In this case, the area of ​​the first opening can be defined as the area of ​​the opening with the smallest area among the openings 110a, 120a, and 130a in the buffer layer 110, gate insulating layer 120, and interlayer insulating layer 130. Figure 39 In the example shown, the inner surface of the opening 120a in the gate insulating layer 120 and the inner surface of the opening 130a in the interlayer insulating layer 130 can be flush with each other.

[0270] So far, inorganic insulating layers have been described as having openings, but one or more embodiments are not limited to this. For example, the inorganic insulating layer may not include a first opening that completely penetrates the inorganic insulating layer at the portion corresponding to the first curved region 1BA, but may include a first groove corresponding to the first curved region 1BA. Figure 40 This is a schematic cross-sectional view of a display device according to an embodiment (i.e., the embodiment showing the above example).

[0271] like Figure 40 As shown, the buffer layer 110 can be continuously formed throughout the entire first region 1A, the first curved region 1BA, and the second region 2A. Additionally, the gate insulating layer 120 can have an opening 120a corresponding to the first curved region 1BA, and the interlayer insulating layer 130 can have an opening 130a corresponding to the first curved region 1BA. Therefore, the inorganic insulating layer including the buffer layer 110, the gate insulating layer 120, and the interlayer insulating layer 130 can be understood as having a first groove corresponding to the first curved region 1BA. The inorganic insulating layer can include first grooves of various shapes. For example, the upper surface of the buffer layer 110 (in the +z direction) can be partially removed, but the lower surface of the gate insulating layer 120 (in the -z direction) can remain unremoved.

[0272] The first groove corresponding to the first curved region 1BA indicates that the first groove can overlap with the first curved region 1BA. Here, the area of ​​the first groove can be larger than the area of ​​the first curved region 1BA. Therefore, in Figure 40 In the diagram, the width GW of the first groove is shown to be greater than the width of the first curved region 1BA. Here, the area of ​​the first groove can be defined as the area of ​​the smaller opening between the opening 120a of the gate insulating layer 120 and the opening 130a of the interlayer insulating layer 130. Figure 40 In the first groove, the area is defined by the area of ​​the opening 120a of the gate insulating layer 120.

[0273] In the display device according to the embodiment, the organic material layer 160 may fill at least a portion of the first recess. Furthermore, in the region where the organic material layer 160 is present, the first conductive layer 215c is located on the organic material layer 160. Additionally, the protective layer 180 (i.e., the additional inorganic insulating layer) includes an additional opening 180a corresponding to the first curved region 1BA and covers the first conductive layer 215c.

[0274] exist Figure 40 For ease of description, the display device is not bent, but in the display device according to the embodiment, the substrate 100 is actually bent as shown. Figure 1 The display device is bent at the first bending region 1BA, as shown. Therefore, the display device is manufactured as follows... Figure 40 As shown, the substrate 100 is in a flat state, and thereafter, the substrate 100 is bent at the first bending region 1BA, so that the display device can be positioned... Figure 1 The state shown.

[0275] Here, when the substrate 100 is bent at the first bending region 1BA, tensile stress can be applied to the first conductive layer 215c. However, in the display device, the inorganic insulating layer includes a first groove on the first bending region 1BA, and a portion of the first conductive layer 215c (which corresponds to the first bending region 1BA) is located on the organic material layer 160 that fills at least a portion of the first groove in the inorganic insulating layer. Therefore, cracks can be prevented from occurring in the first conductive layer 215c that corresponds to the first bending region 1BA and is located on the organic material layer 160, or the possibility of cracks can be reduced. In addition, since the protective layer 180 (i.e., the additional inorganic insulating layer) includes an additional opening 180a that corresponds to the first bending region 1BA, cracks can be prevented or reduced in the first conductive layer 215c that is located on the organic material layer 160 and corresponds to the first bending region 1BA. In addition, since the protective layer 180 (i.e., the additional inorganic insulating layer) includes an additional opening 180a corresponding to the first bending region 1BA, cracks can be prevented from appearing in the protective layer 180, or even if cracks appear in the protective layer 180, the transfer of cracks to the first conductive layer 215c can be effectively prevented and defects can be effectively prevented from appearing in the first conductive layer 215c.

[0276] The above description regarding the case where the inorganic insulating layer includes a first opening can be fully applied to the case where the inorganic insulating layer includes a first groove. For example, the above reference... Figures 33 to 37 The described structure can be applied to Figure 40 The structure is shown. In the following text, for ease of description, the case where the inorganic insulating layer includes a first opening will be described; however, the description can also be applied to the case where the inorganic insulating layer includes a first groove.

[0277] In the above embodiment, the first conductive layer 215c extends in the second direction (+x direction) and intersects with the first direction (+y direction) extending from the uneven surface 160a in the upper surface of the organic material layer 160. The intersection angle can be as follows: Figure 41 The figure shown is 90°. Figure 41 (A plan view of a portion of the display device according to the embodiment), or as shown below. Figure 42 The figures shown are angles other than 90°. Figure 41 and Figure 42 In the accompanying drawings, the reference numeral GD indicates the direction in which the uneven surface 160a extends from the upper surface of the organic material layer 160. When compared with... Figure 41 When making comparisons, Figure 42 The diagram shows that the uneven surface 160a in the upper surface of the organic material layer 160 extends in a direction inclined toward the second direction (+x direction), but one or more embodiments are not limited thereto. For example, the uneven surface 160a in the upper surface of the organic material layer 160 extends in the first direction (+y direction), and the first conductive layer 215c extends in a direction inclined relative to the second direction (+x direction) (e.g., at a 45° angle to the second direction (+x direction)) instead of in the second direction (+x direction). If there are multiple first conductive layers 215c, the angle formed by the extension direction of some of the first conductive layers 215c with respect to the second direction (+x direction) may be different from the angle formed by the extension direction of some of the other first conductive layers 215c with respect to the second direction (+x direction).

[0278] in addition, Figure 41 and Figure 42 The diagram shows a first conductive layer 215c extending straight in the second direction (+x direction), but one or more embodiments are not limited thereto. For example, the first conductive layer 215c extends straight in the second direction (+x direction) and may simultaneously include a plurality of vias extending in the +z direction. That is, at least a portion of the first conductive layer 215c may have a plane (xy plane) spanning the first direction (+y direction) and the second direction (+x direction), wherein the plane has a honeycomb shape. Alternatively, the first conductive layer 215c may not extend straight in the second direction (+x direction), but may have a zigzag or wave-like shape in the plane (xy plane) spanning the first direction (+y direction) and the second direction (+x direction).

[0279] In addition, such as Figure 41 and Figure 42 As shown, multiple first conductive layers 215c extending in the second direction (+x direction) can exist. Here, unlike... Figure 41 and Figure 42In the example shown, the distance between the centers of the first conductive layers 215c in the first curved region 1BA can be greater than the distance between the centers of the first conductive layers 215c in at least one region other than the first curved region 1BA. Therefore, the width of each first conductive layer 215c in the first curved region 1BA in the first direction (+y direction) can be greater than the width of each first conductive layer 215c in the first direction (+y direction) in at least one region other than the first curved region 1BA. As described above, when the width of the first conductive layer 215c in the first curved region 1BA increases, the possibility of a breakage in the first conductive layer 215c due to stress caused by bending at the first curved region 1BA can be greatly reduced.

[0280] The distance between the first conductive layers 215c on the first bending region 1BA and the distance between the first conductive layers 215c on at least one region other than the first bending region 1BA can be substantially equal to each other. In this case, the width of the first conductive layer 215c on the first bending region 1BA in the first direction (+y direction) can be formed to be greater than the width of the first conductive layer 215c on at least one region other than the first bending region 1BA in the first direction (+y direction), and therefore, the possibility of a break in the first conductive layer 215c due to the stress caused by bending at the first bending region 1BA can be greatly reduced.

[0281] Figure 43 This is a schematic perspective view of a portion (e.g., substrate 100) of a display device according to an embodiment. Additionally, Figure 44 yes Figure 43 A schematic plan view of the substrate 100 before bending.

[0282] Unlike reference Figure 1 In the example shown, in addition to the first bending region 1BA, the display device also includes a second bending region 2BA. The second bending region 2BA is located within the first region 1A. When the substrate 100 bends at the first bending region 1BA about a first bending axis 1BAX extending in a first direction (+y direction), the substrate 100 also bends about a second bending axis 2BAX extending in a second direction (+x direction). Here, the corners of the substrate 100 are chamfered, with the corners closest to the portions where the first bending axis 1BAX and the second bending axis 2BAX intersect each other, and therefore, the substrate 100 has a chamfered portion CP. Due to the presence of the chamfered portion CP, the substrate 100 can bend not only about the first bending axis 1BAX but also about the second bending axis 2BAX simultaneously.

[0283] Here, the radius of curvature R1 of the first bending region 1BA can be smaller than the radius of curvature R2 of the second bending region 2BA. It is understood that the substrate 100 bends more gently in the second bending region 2BA than in the first bending region 1BA. Therefore, in the gently bending second bending region 2BA of the substrate 100, the tensile stress applied to the components of the display device can be relatively smaller than the tensile stress applied to the components in the first bending region 1BA. The first inorganic insulating layer in the display device, as described above, includes a first opening or a first groove in the first bending region 1BA, but it can be continuously formed in at least one region of the first region 1A that includes the second bending region 2BA. The reason for the continuous formation of the first inorganic insulating layer in at least one region is that the first inorganic insulating layer can include contact holes for electrically connecting the conductive layers located on its upper and lower portions in the first region 1A. The contact holes can have a circular shape, an elliptical shape, a square shape, etc., in the plan view, and the first opening or the first groove can be shown as a rectangular shape with a very large aspect ratio in the plan view.

[0284] Although no display device exists within the first curved region 1BA, a display device can be formed on the second curved region 2BA included in the first region 1A. Therefore, a display device having at least a curved portion can be realized. Furthermore, since the display device is curved at the second curved region 2BA, when a user views the display surface of an image, the user can perceive that the peripheral area appears to have a reduced area, wherein the image is not displayed on the peripheral area, and the pads are located on the peripheral area.

[0285] Furthermore, as described above, due to the formation of the chamfered portion CP, the substrate 100 can be bent simultaneously around a second bending axis 2BAX intersecting the first bending axis 1BAX and around the first axis 1BAX. Here, the chamfered portion CP can be rounded, so that it does not form an acute angle towards the center of the substrate 100, such as... Figure 44 As shown.

[0286] like Figure 43 As shown, the first bending region 1BA bends around the first bending axis 1BAX, and the second bending region 2BA bends around the second bending axis 2BAX. Stress is applied in the chamfered portion CP towards the center of the substrate 100 to the corner CN, and therefore, the substrate 100 may be torn or damaged. Therefore, to prevent defects, the chamfered portion CP can have the following characteristics: Figure 44 The corner CN shown is rounded towards the center portion of the substrate 100. Here, the radius of curvature at the corner CN towards the center portion of the substrate 100 can be approximately 1 / 20 to approximately 1 / 5 of the radius of curvature at the first curved region 1BA, for example, 1 / 10.

[0287] Furthermore, to prevent high stress from being applied towards the center portion of the substrate 100 and to the corner CN when the first bending region 1BA bends around the first bending axis 1BAX and the second bending region 2BA bends around the second bending axis 2BAX, the end of the first bending region 1BA facing the first region 1A can be closer to the edge of the substrate 100 than the extension of the first cutting line 1CL of the chamfered portion CP. For example, the distance between the end of the first bending region 1BA facing the first region 1A and the extension of the first cutting line 1CL can be approximately 500 μm.

[0288] The end of the second curved region 2BA facing the center of the substrate 100 can be closer to the edge of the substrate 100 than the extension of the second cutting line 2CL of the chamfered portion CP. Here, as described above, since the radius of curvature R2 at the second curved region 2BA is greater than the radius of curvature R1 at the first curved region 1BA, the stress applied to the corner CN of the chamfered portion CP due to the curvature at the second curved region 2BA is less than the stress applied to the corner CN of the chamfered portion CP due to the curvature at the first curved region 1BA. Therefore, the distance between the end of the second curved region 2BA facing the center of the substrate 100 and the extension of the second cutting line 2CL can be shorter than the distance between the end of the first curved region 1BA facing the first region 1A and the extension of the first cutting line 1CL.

[0289] The above description of the chamfered portion CP and its corner CN can be applied to other implementation methods or their modifications.

[0290] exist Figure 43 In this embodiment, the display device is described to include a second curved region 2BA in addition to the first curved region 1BA, but is not limited thereto. For example, a schematic perspective view as part of a display device according to an embodiment is shown. Figure 45 As shown, in addition to the first curved region 1BA or the second curved region 2BA, a third curved region 3BA and a fourth curved region 4BA can be provided. In the above-described display device, it is understood that all four edges of the display device are curved. Here, the third curved region 3BA and the fourth curved region 4BA can have the same / similar structure as the second curved region 2BA.

[0291] The display device can be located in the second curved region 2BA, the third curved region 3BA, and the fourth curved region 4BA, which are included in the first region 1A. Therefore, a display device with four curved edges can be realized. Furthermore, since the display device is curved from the second curved region 2BA to the fourth curved region 4BA, when a user views the display device, the user can perceive that the peripheral area appears to be shrunk, where the image is not displayed on the peripheral area and the pads are located on the peripheral area.

[0292] Figure 46 This is a schematic perspective view of a portion of a display device according to an embodiment. Different from... Figure 45 In the example shown, the first curved region 1BA and the second region 2A can be positioned in a second direction (+x direction) and the opposite direction (-x direction). Similar to the second region 2A present in the second direction (+x direction), various electronic devices can be located in the second region 2A, or a printed circuit board can be electrically connected to the second region 2A.

[0293] As described above regarding display devices according to one or more embodiments, at least two embodiments can be applied to a display device unless they contradict each other. For example, according to reference... Figure 23 The protective film 170 of the display device shown in the embodiment can be applied according to the reference. Figure 32 The display device of the embodiment shown.

[0294] The aforementioned bending region can be understood to include both a region capable of bending and a region that bends, since the substrate can be bent within said region. However, the invention is not limited thereto, and therefore can be applied to flexible or bendable displays having bending regions.

[0295] According to one or more embodiments, a longer lifespan of the display device can be guaranteed, and the generation of defects can be reduced during the manufacturing of the display device.

[0296] It should be understood that the embodiments described herein are to be regarded as descriptive in nature only and not for limiting purposes. The description of features or aspects in each embodiment should typically be considered as applicable to other similar features or aspects in other embodiments.

[0297] Although the inventive technique has been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. A display device comprising: a substrate including a first region, a second region, and a first curved region between the first region and the second region, wherein the first curved region is curved around a first curved axis extending in a first direction; a first inorganic insulating layer disposed over the substrate and having a first opening or a first recess at least in the first curved region; a second inorganic insulating layer disposed over the first inorganic insulating layer and having a second opening at least in the first opening or the first recess; an organic material layer filling at least a portion of the second opening; and a first conductive layer extending from the first region to the second region across the first curved region and over the organic material layer, wherein the second opening has an area larger than the first opening or the first recess, and wherein the organic material layer is at least partially disposed between an upper surface of the first inorganic insulating layer and the first conductive layer and / or between an upper surface of the second inorganic insulating layer and the first conductive layer.

2. The display device according to claim 1, wherein The first opening or the first recess has an area larger than the first curved region.

3. The display device according to claim 1, wherein The organic material layer covers an inner side surface of the first opening or the first recess.

4. The display device according to claim 1, further comprising a second conductive layer arranged over the first region or the second region and on a layer different from a layer on which the first conductive layer is located, wherein, The second conductive layer is electrically connected to the first conductive layer.

5. The display device according to claim 4, further comprising a thin film transistor arranged over the first region or the second region and including a source electrode, a drain electrode, and a gate electrode, wherein The first conductive layer is on the same layer as the source electrode and the drain electrode, and wherein the second conductive layer is on the same layer as the gate electrode.

6. The display device according to claim 1, further comprising a thin film transistor arranged over the first region or the second region and including a semiconductor layer, a source electrode, a drain electrode, and a gate electrode, wherein The first inorganic insulating layer is disposed between the substrate and the semiconductor layer, and the second inorganic insulating layer is disposed between the semiconductor layer and the gate electrode.

7. The display device according to claim 1, wherein The substrate includes a second curved region extending in a second direction intersecting the first direction within the first region, and wherein the second curved region is curved around a second curved axis extending in the second direction.

8. The display device of claim 7, wherein, The substrate has a chamfered corner closest to a point at which the first curved axis and the second curved axis intersect each other.

9. The display device according to claim 1, wherein The organic material layer continuously extends within the second opening between the substrate and the first conductive layer.

10. The display device according to claim 1, wherein The organic material layer includes an upper surface that is at least partially uneven.

11. The display device of claim 10, wherein, An upper surface of the first conductive layer has a shape corresponding to a shape of the upper surface of the organic material layer. 12.A display device comprising: a substrate including a first region, a second region, and a first curved region between the first region and the second region, wherein the first curved region is curved around a first curved axis extending in a first direction; an inorganic insulating layer disposed over the substrate and having an opening or a recess at least in the first curved region; an organic material layer filling at least a portion of the opening or the recess; and a first conductive layer extending from the first region to the second region across the first curved region and over the organic material layer, wherein an inner side surface of the opening or the recess has a stepped portion, and wherein the first conductive layer is electrically connected to the second conductive layer. The organic material layer is at least partially disposed between the upper surface of the inorganic insulating layer and the first conductive layer.

13. The display device of claim 12, wherein, The inorganic insulating layer includes a first inorganic insulating layer disposed on the substrate and a second inorganic insulating layer disposed on the first inorganic insulating layer. The first inorganic insulating layer has at least a first opening or a first groove in the first curved region. The second inorganic insulating layer has a second opening at least in the first opening or the first groove. The second opening has an area larger than the first opening or the first groove.

14. The display device of claim 13, wherein, The first opening or the first groove has an area larger than the first curved region.

15. The display device according to claim 13, further comprising a thin film transistor arranged over the first region or the second region and including a semiconductor layer, a source electrode, a drain electrode, and a gate electrode, wherein The first inorganic insulating layer is disposed between the substrate and the semiconductor layer, and the second inorganic insulating layer is disposed between the semiconductor layer and the gate electrode.

16. The display device according to claim 12, further comprising a second conductive layer arranged over the first region or the second region and on a layer different from a layer on which the first conductive layer is located, wherein, The second conductive layer is electrically connected to the first conductive layer.

17. The display device according to claim 16, further comprising a thin film transistor arranged over the first region or the second region and including a source electrode, a drain electrode, and a gate electrode, wherein The first conductive layer is located on the same layer as the source electrode and the drain electrode, and the second conductive layer is located on the same layer as the gate electrode.

18. The display device of claim 12, further comprising a stress neutralizing layer located on the upper portion of the first conductive layer.

19. The display device of claim 12, wherein, The organic material layer includes an upper surface that is at least partially uneven.

20. The display device of claim 19, wherein, The upper surface of the first conductive layer has a shape corresponding to the shape of the upper surface of the organic material layer.

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