Method for manufacturing a semiconductor chip with a film-like adhesive

Abstract

The present invention provides a method for manufacturing a semiconductor chip with a film-like adhesive, which includes a semiconductor chip and a film-like adhesive provided on the back surface thereof. In this manufacturing method, a sheet for manufacturing a semiconductor device is used, which includes a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, and the intermediate layer contains a non-silicon resin with a weight average molecular weight of 100,000 or less as a main component. The manufacturing method has: a step of bonding the film-like adhesive of the sheet for manufacturing a semiconductor device to the back surface of the semiconductor chip to produce a laminate of the sheet for manufacturing a semiconductor device and the semiconductor chip; and a step of irradiating the laminate with a laser along the outer periphery of the semiconductor chip from the side of the laminate on which the semiconductor chip is laminated to cut the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip with a film-like adhesive.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor chip with a film-like adhesive.

[0002] This application claims priority based on Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020, and incorporates its content herein. Background Art

[0003] When manufacturing a semiconductor device, a semiconductor chip with a film-like adhesive provided on its back surface can be used.

[0004] As an example of a method for manufacturing a semiconductor chip with a film-like adhesive, for example, the following manufacturing method can be cited.

[0005] First, a dicing wafer is attached to the back surface of a semiconductor wafer.

[0006] As the dicing wafer, for example, a dicing wafer having a support sheet and a film-like adhesive provided on the surface of the support sheet can be cited. The support sheet can also be used as a dicing sheet. As the support sheet, for example, there are various support sheets with different configurations such as a support sheet having a base material and an adhesive layer provided on the surface of the base material; a support sheet composed only of a base material, etc. The outermost surface on the adhesive layer side of the support sheet having an adhesive layer is the surface on which the film-like adhesive is provided. The dicing wafer can be attached to the back surface of the semiconductor wafer through the film-like adhesive therein.

[0007] Next, the semiconductor wafer on the support sheet is cut together with the film-like adhesive by a blade. The "cutting" of the semiconductor wafer is also called "dicing", whereby the semiconductor wafer can be singulated into target semiconductor chips. The film-like adhesive is cut along the outer periphery of the semiconductor chip. Thus, a semiconductor chip with a film-like adhesive having a semiconductor chip and a cut film-like adhesive provided on its back surface can be obtained, and at the same time, a semiconductor chip group with a film-like adhesive in which a plurality of the above semiconductor chips with a film-like adhesive are held in an aligned state on the support sheet can be obtained.

[0008] Next, the semiconductor chip with a film-like adhesive is picked up by pulling it away from the support sheet. In the case of using a support sheet having a curable adhesive layer, at this time, the adhesiveness is reduced by curing the adhesive layer, making it easy to pick up.

[0009] In the above manner, a semiconductor chip with a film-like adhesive for manufacturing a semiconductor device can be obtained.

[0010] As another example of a method for manufacturing a semiconductor chip with a film-like adhesive, for example, the following manufacturing method can be cited.

[0011] First, an abrading tape (sometimes also referred to as a "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer.

[0012] Next, a position for predetermined division is set inside the semiconductor wafer. Taking the region included in this position as a focus, laser is irradiated in a manner focused on this focus, thereby forming a modified layer inside the semiconductor wafer. Next, the back surface of the semiconductor wafer is ground using a grinder, thereby adjusting the thickness of the semiconductor wafer to a target value. By utilizing the force applied to the semiconductor wafer during grinding at this time, the semiconductor wafer is divided (singulated) at the position where the modified layer is formed, and a plurality of semiconductor chips are fabricated. This method of dividing a semiconductor wafer accompanied by the formation of a modified layer is called Stealth Dicing (registered trademark), which is essentially completely different from laser cutting that cuts off the irradiated part of the semiconductor wafer by irradiating the semiconductor wafer with laser and simultaneously cuts the semiconductor wafer from its surface.

[0013] Next, one dicing sheet is attached to the back surface (in other words, the ground surface) of all these semiconductor chips fixed to the abrading tape that has undergone the above grinding. As the dicing sheet, the same sheet as the above-mentioned cutting dicing sheet can be cited. The dicing sheet can be designed to have the same constitution as the cutting dicing sheet as described above, except that it is not used when cutting the semiconductor wafer. The dicing sheet can also be attached to the back surface of the semiconductor chip through the film-like adhesive therein.

[0014] Next, after removing the abrading tape from the semiconductor chip, while cooling the dicing sheet, it is stretched in a direction parallel to its surface (for example, the surface to which the film-like adhesive is attached to the semiconductor chip), that is, so-called expansion (cold expansion) is performed, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip.

[0015] Thereby, a semiconductor chip with a film-like adhesive having a semiconductor chip and a cut film-like adhesive provided on its back surface can be obtained.

[0016] Next, in the same manner as when using the above-mentioned blade cutting, the semiconductor chip with a film-like adhesive is picked up by pulling it away from the support sheet, thereby obtaining a semiconductor chip with a film-like adhesive for the manufacture of a semiconductor device.

[0017] As other examples of the manufacturing method of a semiconductor chip with a film-like adhesive, for example, the manufacturing method shown below can be cited.

[0018] First, a groove with a predetermined depth from the surface side of the wafer is formed using a cutting blade. This process is also called so-called half-cut.

[0019] Next, an abrading tape is attached to the circuit formation surface of the semiconductor wafer. Then, the back surface of the wafer is ground to adjust the thickness of the semiconductor wafer to a target value. At this time, by grinding up to the position of the pre-formed groove, the semiconductor wafer can be divided (singulated) to fabricate a plurality of semiconductor chips.

[0020] Next, after attaching a dicing wafer to the grinding surface, the abrading tape is removed from the semiconductor chip. The semiconductor chip group is fixed onto the substrate via a film-like adhesive. The film-like adhesive can be cut along the outer periphery of the semiconductor chip by laser irradiation or spreading. Since this method reverses the conventional process of dicing the wafer after grinding the back surface, it is called the dicing before grinding method (DBG: Dicing Before Grinding).

[0021] In addition, the previously mentioned Stealth Dicing (registered trademark) is also called SDBG (Stealth Dicing Before Grinding), and it can be regarded as a modified example of the dicing before grinding method.

[0022] Both the dicing wafer and the dicing tape can be used in the manufacture of semiconductor chips with a film-like adhesive, and ultimately the target semiconductor device can be manufactured. In this specification, the dicing wafer and the dicing tape are collectively referred to as "sheets for manufacturing semiconductor devices".

[0023] As a sheet for manufacturing semiconductor devices, for example, a dicing tape (equivalent to the dicing wafer) having a structure in which a substrate layer (equivalent to the support sheet) and an adhesive layer (equivalent to the film-like adhesive) are laminated in direct contact is disclosed (see Patent Document 1). For this dicing tape, since the 90-degree peel strength of the substrate layer and the adhesive layer at -15°C is adjusted to a specific range, the adhesive layer can be cut by spreading with good precision. And since the 90-degree peel strength of the substrate layer and the adhesive layer at 23°C is adjusted to a specific range, when using this dicing tape, the semiconductor chip with the adhesive layer (equivalent to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and the semiconductor wafer and the semiconductor chip can be prevented from peeling off from the adhesive layer during the picking-up process.

[0024] Prior Art Documents

[0025] Patent Documents

[0026] Patent Document 1: Japanese Patent Application Laid-Open No. 2018-56289 Summary of the Invention

[0027] Technical Problem to be Solved by the Invention

[0028] As described above, there is a case where, for example, the first cutting method (DBG) is applied, and the film-like adhesive is cut by laser irradiation after the wafer is divided.

[0029] However, although the dicing and die bonding tape disclosed in Patent Document 1 is suitable for application to Stealth Dicing (registered trademark), it is not suitable for cutting the adhesive layer based on laser irradiation. If this dicing and die bonding tape is used to cut the adhesive layer based on laser irradiation, it is easy to generate laser processing chips (in this field, sometimes also referred to as "debris", etc.) from the base material layer.

[0030] An object of the present invention is to provide a method for manufacturing a semiconductor chip with a film-like adhesive that is not likely to generate debris when cutting the film-like adhesive.

[0031] Technical means for solving technical problems

[0032] The present invention has the following solutions.

[0033] (1) A method for manufacturing a semiconductor chip with a film-like adhesive, which is a method for manufacturing a semiconductor chip with a film-like adhesive having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip,

[0034] In the manufacturing method, a wafer for semiconductor device manufacturing is used,

[0035] The wafer for semiconductor device manufacturing includes a base material, an adhesive layer, an intermediate layer, and a film-like adhesive,

[0036] The wafer for semiconductor device manufacturing is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the base material,

[0037] The intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component,

[0038] The manufacturing method has:

[0039] A step of producing a laminate of the wafer for semiconductor device manufacturing and the semiconductor chip by bonding the film-like adhesive of the wafer for semiconductor device manufacturing to the back surface of the semiconductor chip; and

[0040] A step of irradiating the laminate with laser from the side where the semiconductor chip is laminated in the laminate to cut the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip with a film-like adhesive.

[0041] (2) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to (1) above, after the step of obtaining the semiconductor chip with a film-shaped adhesive, further includes a step of picking up the semiconductor chip with a film-shaped adhesive by pulling it away from the intermediate layer.

[0042] (3) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to (1) or (2) above, wherein the semiconductor chip is a semiconductor chip group singulated by DBG (dicing before grinding).

[0043] (4) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to any one of (1) to (3) above, wherein in the intermediate layer, the proportion of the non-silicon resin content relative to the total mass of the intermediate layer is 50% by mass or more.

[0044] (5) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to any one of (1) to (4) above, wherein when analyzing the surface of the intermediate layer on the film-shaped adhesive side by X-ray photoelectron spectroscopy, the proportion of the silicon concentration relative to the total concentration of carbon, oxygen, nitrogen, and silicon is 1 to 20%.

[0045] (6) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to any one of (1) to (5) above, wherein the non-silicon resin contains ethylene vinyl acetate copolymer.

[0046] (7) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to (6) above, wherein in the ethylene vinyl acetate copolymer, the proportion of the structural unit derived from vinyl acetate relative to the total mass of all structural units is 30% by mass or less.

[0047] (8) The manufacturing method of the semiconductor chip with a film-shaped adhesive according to any one of (1) to (7) above, wherein the intermediate layer contains ethylene vinyl acetate copolymer as the non-silicon resin and a siloxane compound.

[0048] In the intermediate layer, the proportion of the ethylene vinyl acetate copolymer content relative to the total mass of the intermediate layer is 90 to 99.99% by mass.

[0049] In the intermediate layer, the proportion of the siloxane compound content relative to the total mass of the intermediate layer is 0.01 to 10% by mass.

[0050] Advantages of the Invention

[0051] According to this solution, a manufacturing method of a semiconductor chip with a film-shaped adhesive that is not likely to generate debris when cutting the film-shaped adhesive can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 FIG. 1 is a cross-sectional view of a wafer for manufacturing a semiconductor device, schematically showing an embodiment of the present invention.

[0053] Figure 2 FIG. Figure 1 2 is a plan view of the wafer for manufacturing a semiconductor device shown in FIG. 1.

[0054] Figure 3A FIG. 3 is a cross-sectional view for schematically explaining an example of a method of using the wafer for manufacturing a semiconductor device.

[0055] Figure 3B FIG. 4 is a cross-sectional view for schematically explaining an example of a method of using the wafer for manufacturing a semiconductor device.

[0056] Figure 3C FIG. 5 is a cross-sectional view for schematically explaining an example of a method of using the wafer for manufacturing a semiconductor device.

[0057] Figure 4A FIG. 6 is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor chip.

[0058] Figure 4B FIG. 7 is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor chip.

[0059] Figure 4C FIG. 8 is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor chip.

[0060] Figure 5A FIG. 9 is a cross-sectional view for schematically explaining another example of a method of using the wafer for manufacturing a semiconductor device.

[0061] Figure 5B FIG. 10 is a cross-sectional view for schematically explaining another example of a method of using the wafer for manufacturing a semiconductor device.

[0062] Figure 5C FIG. 11 is a cross-sectional view for schematically explaining another example of a method of using the wafer for manufacturing a semiconductor device.

[0063] Figure 6A FIG. 12 is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor chip.

[0064] Figure 6B FIG. 13 is a cross-sectional view for schematically explaining an example of a method of manufacturing a semiconductor chip.

[0065] Figure 6CA cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0066] Figure 7A A cross-sectional view schematically illustrating another example of a method of using a wafer for manufacturing a semiconductor device according to an embodiment of the present invention.

[0067] Figure 7B A cross-sectional view schematically illustrating another example of a method of using a wafer for manufacturing a semiconductor device according to an embodiment of the present invention.

[0068] Figure 7C A cross-sectional view schematically illustrating another example of a method of using a wafer for manufacturing a semiconductor device according to an embodiment of the present invention. Detailed Description

[0069] ◇ Wafer for Manufacturing Semiconductor Device

[0070] A wafer for manufacturing a semiconductor device according to an embodiment of the present invention includes a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate. The intermediate layer contains a non-silicon resin having a weight-average molecular weight of 100,000 or less as a main component.

[0071] When the wafer for manufacturing a semiconductor device of this embodiment is used to cut a dicing wafer and perform blade cutting, since the wafer for manufacturing a semiconductor device has the intermediate layer, it is possible to easily prevent the blade from reaching the substrate and the adhesive layer, and it is possible to suppress the generation of whisker-like cutting chips (alias: whisker, hereinafter, not limited to cutting chips from the substrate and the adhesive layer, sometimes simply referred to as "cutting chips") from the substrate and the adhesive layer.

[0072] Similarly, when the film-like adhesive is cut by laser irradiation, since the wafer for manufacturing a semiconductor device has the intermediate layer, it is possible to easily prevent the laser from reaching the substrate and the adhesive layer, and it is possible to suppress the generation of debris (alias: debris, hereinafter, not limited to debris from the substrate and the adhesive layer, sometimes simply referred to as "debris") from the substrate and the adhesive layer.

[0073] In addition, by making the main component of the intermediate layer cut by the blade or the laser be a non-silicon resin having a weight-average molecular weight of 100,000 or less, especially by making the weight-average molecular weight 100,000 or less, it is also possible to suppress the generation of the cutting chips or debris from the intermediate layer.

[0074] On the other hand, when the sheet for manufacturing a semiconductor device of the present embodiment is used as a dicing sheet and dicing (Stealth Dicing (registered trademark)) accompanied by the formation of a modified layer in a semiconductor wafer is performed, by providing the intermediate layer in the sheet for manufacturing a semiconductor device and continuously stretching the sheet for manufacturing a semiconductor device in a direction parallel to its surface (for example, the bonding surface of the film-like adhesive attached to the semiconductor chip), that is, performing so-called expansion, the film-like adhesive can be cut at a target position with good accuracy, and cutting defects can be suppressed. It is considered that this is because by providing the intermediate layer, the stress generated during expansion can be effectively utilized for expanding the chip pitch.

[0075] As described above, the sheet for manufacturing a semiconductor device of the present embodiment can suppress the generation of cutting chips from the substrate and the intermediate layer during blade dicing, and can suppress cutting defects of the film-like adhesive during the above-mentioned expansion.

[0076] In addition, the sheet for manufacturing a semiconductor device of the present embodiment has the property of suppressing the generation of debris during cutting of the film-like adhesive based on laser, and the cutting suitability of the film-like adhesive is excellent.

[0077] The sheet for manufacturing a semiconductor device of the present embodiment has the property of suppressing the occurrence of defects during the manufacture of semiconductor chips with a film-like adhesive.

[0078] In this specification, unless otherwise specified, the "weight average molecular weight" refers to the polystyrene conversion value measured by gel permeation chromatography (GPC).

[0079] The method of using the sheet for manufacturing a semiconductor device of the present embodiment will be described in detail later.

[0080] Hereinafter, with reference to the accompanying drawings, the sheet for manufacturing a semiconductor device of the present embodiment will be described in detail. In addition, for the sake of easy understanding of the features of the embodiment, for convenience, sometimes important parts in the drawings used in the following description are enlarged and shown, and the dimensional ratios of the respective components are not necessarily the same as the actual ones.

[0081] Figure 1 To schematically show a cross-sectional view of the sheet for manufacturing a semiconductor device according to an embodiment of the present invention, Figure 2 is Figure 1 a plan view of the shown sheet for manufacturing a semiconductor device.

[0082] In addition, in Figure 2 subsequent figures, for components that are the same as those shown in the figures that have been described, the same reference numerals as those in the figures that have been described are used, and their detailed descriptions are omitted.

[0083] The sheet 101 for manufacturing a semiconductor device shown here includes a substrate 11, and is formed by sequentially laminating an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 on the substrate 11. The sheet 101 for manufacturing a semiconductor device further includes a release film 15 on a surface (hereinafter sometimes referred to as the "first surface") 14a of the film-like adhesive 14 on the side opposite to the side where the intermediate layer 13 is provided.

[0084] In the sheet 101 for manufacturing a semiconductor device, an adhesive layer 12 is provided on one surface (in this specification, sometimes referred to as the "first surface") 11a of the substrate 11. An intermediate layer 13 is provided on a surface (in this specification, sometimes referred to as the "first surface") 12a of the adhesive layer 12 on the side opposite to the side where the substrate 11 is provided. A film-like adhesive 14 is provided on a surface (in this specification, sometimes referred to as the "first surface") 13a of the intermediate layer 13 on the side opposite to the side where the adhesive layer 12 is provided. A release film 15 is provided on the first surface 14a of the film-like adhesive 14. Thus, the sheet 101 for manufacturing a semiconductor device is formed by sequentially laminating the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 in their thickness directions.

[0085] The sheet 101 for manufacturing a semiconductor device is used as follows: In a state where the release film 15 is removed, the first surface 14a of the film-like adhesive 14 in the sheet 101 for manufacturing a semiconductor device is attached to the back surface of a semiconductor wafer, a semiconductor chip, or an incompletely divided semiconductor wafer (not shown).

[0086] In this specification, regardless of whether it is a semiconductor wafer or a semiconductor chip, the surface on which the circuit is formed is referred to as the "circuit formation surface", and the surface opposite to the circuit formation surface is referred to as the "back surface".

[0087] In this specification, a laminate having a substrate and an adhesive layer laminated in their thickness directions and not laminated with an intermediate layer is sometimes referred to as a "support sheet". In Figure 1 it, the support sheet is denoted by reference numeral 1.

[0088] In addition, a laminate having a substrate, an adhesive layer, and an intermediate layer sequentially laminated in their thickness directions is referred to as a "laminated sheet". Figure 1 In it, the laminated sheet is denoted by reference numeral 10. The laminate of the support sheet and the intermediate layer is included in the laminated sheet.

[0089] When looking down on the intermediate layer 13 and the film-like adhesive 14 from above in the vertical direction, the planar shapes of both the intermediate layer 13 and the film-like adhesive 14 are circular, and the diameter of the intermediate layer 13 is the same as the diameter of the film-like adhesive 14.

[0090] Further, in the sheet 101 for manufacturing a semiconductor device, the intermediate layer 13 and the film-like adhesive 14 are arranged such that their centers coincide, in other words, the positions of the outer peripheries of the intermediate layer 13 and the film-like adhesive 14 coincide in their radial directions.

[0091] The areas of the first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 are both smaller than the first surface 12a of the adhesive layer 12. Also, the maximum value of the width W 13 (i.e., the diameter) of the intermediate layer 13 and the maximum value of the width W 14 (i.e., the diameter) of the film-like adhesive 14 are both smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the base material 11. Therefore, in the sheet 101 for manufacturing a semiconductor device, a part of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. The release film 15 is in direct contact with and laminated on this area of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, and in the state where the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may sometimes be referred to as the "non-laminated area").

[0092] In addition, in the sheet 101 for manufacturing a semiconductor device having the release film 15, as shown here, there may or may not be an area where the release film 15 is not laminated on the area of the adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14.

[0093] The sheet 101 for manufacturing a semiconductor device in a state where the film-like adhesive 14 is not cut and is attached to the above-mentioned semiconductor wafer or semiconductor chip etc. via the film-like adhesive 14 can be fixed by attaching a part of the non-laminated area in the adhesive layer 12 thereof to a jig such as an annular frame for fixing the semiconductor wafer. Therefore, there is no need to separately provide a jig adhesive layer for fixing the sheet 101 for manufacturing a semiconductor device to the jig on the sheet 101 for manufacturing a semiconductor device. And since there is no need to provide a jig adhesive layer, the sheet 101 for manufacturing a semiconductor device can be manufactured efficiently at low cost.

[0094] Although the sheet 101 for manufacturing a semiconductor device can achieve advantageous effects by not having a jig adhesive layer as described above, it may also have a jig adhesive layer. At this time, the jig adhesive layer is provided in an area near the peripheral portion of the surface of any layer constituting the sheet 101 for manufacturing a semiconductor device. As such an area, the non-laminated area on the first surface 12a of the adhesive layer 12 etc. can be cited.

[0095] The adhesive layer for the jig can be a well-known adhesive layer for a jig. For example, it can be a single-layer structure containing an adhesive component, or a multi-layer structure formed by laminating layers containing an adhesive component on both surfaces of a sheet serving as a core material.

[0096] Furthermore, when the sheet 101 for manufacturing a semiconductor device is stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12) in the manner described later, that is, when so-called expansion is performed, the presence of the non-laminated region on the first surface 12a of the adhesive layer 12 makes it easy to expand the sheet 101 for manufacturing a semiconductor device. And not only is it easy to cut the film-like adhesive 14, but sometimes it is also possible to suppress the peeling of the intermediate layer 13 and the film-like adhesive 14 from the adhesive layer 12.

[0097] In the sheet 101 for manufacturing a semiconductor device, the intermediate layer 13 contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

[0098] The sheet for manufacturing a semiconductor device of the present embodiment is not limited to Figure 1 and Figure 2 the sheet for manufacturing a semiconductor device shown, and within the range that does not impair the effects of the present invention, the partial configuration of Figure 1 and Figure 2 the sheet for manufacturing a semiconductor device shown can be changed, deleted, or added.

[0099] For example, the sheet for manufacturing a semiconductor device of the present embodiment may also include other layers that do not belong to any of the substrate, adhesive layer, intermediate layer, film-like adhesive, release film, and adhesive layer for the jig. However, the sheet for manufacturing a semiconductor device of the present embodiment preferably has an adhesive layer in a state where the adhesive layer is in direct contact with the substrate, an intermediate layer in a state where the intermediate layer is in direct contact with the adhesive layer, and a film-like adhesive in a state where the film-like adhesive is in direct contact with the intermediate layer, as Figure 1 shown.

[0100] For example, in the sheet for manufacturing a semiconductor device of the present embodiment, the planar shapes of the intermediate layer and the film-like adhesive can be shapes other than circular, and the planar shapes of the intermediate layer and the film-like adhesive can be the same as or different from each other. Furthermore, it is preferable that the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both smaller than the area of the surface of the layer closer to the substrate side than them (for example, the first surface of the adhesive layer), and the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive can be the same as or different from each other. And the positions of the outer peripheries of the intermediate layer and the film-like adhesive can be the same or different in their radial directions.

[0101] Next, each layer constituting the sheet for manufacturing a semiconductor device of the present embodiment will be described in more detail.

[0102] ○Base material

[0103] The base material is in sheet or film form.

[0104] The constituent material of the base material is preferably various resins. Specifically, for example, polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrides, modified products, crosslinked products or copolymers of any of the above resins, etc. can be cited.

[0105] In addition, in this specification, “(meth)acrylic acid” is a concept including both “acrylic acid” and “methacrylic acid”. The same applies to terms similar to (meth)acrylic acid. For example, “(meth)acrylate” is a concept including “acrylate” and “methacrylate”, and “(meth)acryloyl” is a concept including “acryloyl” and “methacryloyl”.

[0106] The resin constituting the base material can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0107] The base material can be composed of one layer (single layer), or can be composed of two or more layers. When the base material is composed of multiple layers, these multiple layers can be the same as each other or different from each other. As long as the effects of the present invention are not impaired, the combination of these multiple layers is not particularly limited.

[0108] In this specification, not limited to the base material, “multiple layers can be the same as each other or different from each other” means “all layers can be the same, or all layers can be different, or only some layers can be the same”. Further, “multiple layers are different from each other” means “at least one of the constituent material and thickness of each layer is different from each other”.

[0109] The thickness of the base material can be appropriately selected according to the purpose, and is preferably 50 to 300 μm, more preferably 60 to 150 μm. By making the thickness of the base material above the lower limit value, the structure of the base material is more stable. By making the thickness of the base material below the upper limit value, when performing blade cutting and during the expansion of the sheet for semiconductor device manufacturing, it is easier to cut the film-like adhesive.

[0110] Here, the "thickness of the substrate" refers to the overall thickness of the substrate. For example, in the case of a substrate composed of multiple layers, the thickness refers to the total thickness of all the layers that make up the substrate.

[0111] In this specification, unless otherwise specified, the "thickness" is the value represented by the average of the thicknesses measured at five randomly selected locations, and can be obtained using a constant-pressure thickness gauge in accordance with JIS K7130.

[0112] In order to improve the adhesion between the substrate and other layers such as the adhesive layer provided thereon, the surface of the substrate can be subjected to roughening treatment based on sandblasting treatment, solvent treatment, embossing treatment, etc.; oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc.

[0113] In addition, the surface of the substrate can also be subjected to primer treatment.

[0114] In addition, the substrate can also have: an antistatic coating; a layer that prevents the substrate from adhering to other sheets or from adhering to a suction table when stacking and storing solid wafers, etc.

[0115] In addition to containing the main constituent materials such as the resin, the substrate can also contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, a softening agent (plasticizer), etc.

[0116] As long as it is within the range that does not impair the effects of the present invention, the optical properties of the substrate are not particularly limited. The substrate can be, for example, a substrate that transmits laser or energy rays.

[0117] The substrate can be manufactured by a known method. For example, a substrate containing a resin (having the resin as a constituent material) can be manufactured by molding the resin or a resin composition containing the resin.

[0118] ○Adhesive layer

[0119] The adhesive layer is in the form of a sheet or film and contains an adhesive.

[0120] The adhesive layer can be formed using an adhesive composition containing the adhesive. For example, by applying the adhesive composition onto the surface of the object on which the adhesive layer is to be formed and drying it as required, an adhesive layer can be formed at the target site.

[0121] The adhesive composition can be applied by a known method. For example, methods using various coaters such as an air knife coater, a doctor blade coater, a rod coater, an intaglio coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a blade coater, a screen coater, a Meyer bar coater, and a kiss coater can be cited.

[0122] The drying conditions of the adhesive composition are not particularly limited. However, when the adhesive composition contains the solvents described later, it is preferably dried by heating. In this case, for example, it is preferably dried at 70 to 130 °C for 10 seconds to 5 minutes.

[0123] Examples of the adhesive include pressure-sensitive adhesive resins such as acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy resins, polyethylene ethers, polycarbonates, and ester resins. Acrylic resins are preferred.

[0124] In addition, in this specification, "pressure-sensitive adhesive resin" includes resins having pressure sensitivity and resins having adhesiveness. For example, the pressure-sensitive adhesive resin includes not only resins having pressure sensitivity by themselves, but also resins that exhibit pressure sensitivity when used in combination with other components such as additives, or resins that exhibit adhesiveness due to the presence of triggers such as heat or water.

[0125] The adhesive layer can be either curable or non-curable, for example, it can be either energy-ray curable or non-energy-ray curable. The curable adhesive layer can easily adjust its physical properties before and after curing.

[0126] In this specification, "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of energy rays include ultraviolet rays, radiation, and electron beams. For example, as ultraviolet rays, irradiation can be performed by using a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light lamp, or an LED lamp as an ultraviolet ray source. For electron beams, electron beams generated by an electron beam accelerator or the like can be irradiated.

[0127] In addition, in this specification, "energy-ray curable" refers to the property of being cured by irradiation with energy rays, and "non-energy-ray curable" refers to the property of not being cured even when irradiated with energy rays.

[0128] The adhesive layer can be composed of one layer (single layer) or two or more layers. When composed of multiple layers, these multiple layers can be the same as each other or different from each other, and the combination of these multiple layers is not particularly limited.

[0129] The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

[0130] Herein, the "thickness of the adhesive layer" refers to the overall thickness of the adhesive layer. For example, in the case of an adhesive layer composed of multiple layers, the thickness refers to the total thickness of all the layers constituting the adhesive layer.

[0131] As long as it is within the range that does not impair the effects of the present invention, there are no particular limitations on the optical properties of the adhesive layer. For example, the adhesive layer can be an adhesive layer that transmits energy rays.

[0132] Next, the adhesive composition will be described.

[0133] The following adhesive composition can contain one or more of the following components in such a manner that the total content (mass%) does not exceed 100 mass%.

[0134] <<Adhesive Composition>>

[0135] When the adhesive layer is energy ray curable, as the adhesive composition containing an energy ray curable adhesive, that is, an energy ray curable adhesive composition, for example, there can be mentioned: an adhesive composition (I-1) containing a non-energy ray curable adhesive resin (I-1a) (hereinafter, sometimes abbreviated as "adhesive resin (I-1a)") and an energy ray curable compound; an adhesive composition (I-2) containing an energy ray curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the non-energy ray curable adhesive resin (I-1a) (hereinafter, sometimes abbreviated as "adhesive resin (I-2a)"); an adhesive composition (I-3) containing the adhesive resin (I-2a) and an energy ray curable compound, etc.

[0136] <Adhesive Composition (I-1)>

[0137] As described above, the adhesive composition (I-1) contains a non-energy ray curable adhesive resin (I-1a) and an energy ray curable compound.

[0138] [Adhesive Resin (I-1a)]

[0139] Preferably, the adhesive resin (I-1a) is an acrylic resin.

[0140] As the acrylic resin, for example, there can be mentioned an acrylic polymer having at least a structural unit derived from an alkyl (meth)acrylate.

[0141] The structural units of the acrylic resin may be only one type, or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0142] The pressure-sensitive adhesive resin (I-1a) contained in the pressure-sensitive adhesive composition (I-1) may be only one type, or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0143] In the pressure-sensitive adhesive composition (I-1), the content of the pressure-sensitive adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0144] [Energy ray curable compound]

[0145] Examples of the energy ray curable compound contained in the pressure-sensitive adhesive composition (I-1) include monomers or oligomers having an energy ray polymerizable unsaturated group and curable by irradiation with energy rays.

[0146] Examples of the monomers in the energy ray curable compound include polyfunctional (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, etc.

[0147] Examples of the oligomers in the energy ray curable compound include oligomers formed by polymerizing the monomers exemplified above.

[0148] In terms of having a relatively large molecular weight and being less likely to reduce the storage modulus of the pressure-sensitive adhesive layer, it is preferred that the energy ray curable compound is urethane (meth)acrylate or urethane (meth)acrylate oligomer.

[0149] The energy ray curable compound contained in the pressure-sensitive adhesive composition (I-1) may be only one type, or two or more types. When there are two or more types, their combination and ratio can be arbitrarily selected.

[0150] In the pressure-sensitive adhesive composition (I-1), the content of the energy ray curable compound relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.

[0151] [Crosslinking agent]

[0152] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an (alkyl) acrylate is used as the pressure-sensitive adhesive resin (I-1a), it is preferred that the pressure-sensitive adhesive composition (I-1) further contains a crosslinking agent.

[0153] The crosslinking agent crosslinks the pressure-sensitive adhesive resins (I-1a) with each other, for example, by reacting with the functional groups.

[0154] Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol diglycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanurate skeleton).

[0155] From the viewpoint of improving the cohesion of the pressure-sensitive adhesive and thus improving the adhesive strength of the pressure-sensitive adhesive layer, and in terms of easy availability, etc., it is preferred that the crosslinking agent is an isocyanate-based crosslinking agent.

[0156] The crosslinking agent contained in the pressure-sensitive adhesive composition (I-1) may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0157] When using a crosslinking agent, in the pressure-sensitive adhesive composition (I-1), relative to 100 parts by mass of the content of the pressure-sensitive adhesive resin (I-1a), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.

[0158] [Photoinitiator]

[0159] The pressure-sensitive adhesive composition (I-1) may further contain a photoinitiator. Even when irradiated with energy rays having a relatively low energy such as ultraviolet rays, the pressure-sensitive adhesive composition (I-1) containing a photoinitiator can sufficiently undergo a curing reaction.

[0160] As the photopolymerization initiator, examples thereof include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoate, methyl benzoin benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acylphosphine oxide compounds such as phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfides such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylethenyl)phenyl]propanone; 2-chloroanthraquinone, etc.

[0161] In addition, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone and photosensitizers such as amines can also be used.

[0162] The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1) can be only one kind or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0163] When using a photopolymerization initiator, in the pressure-sensitive adhesive composition (I-1), relative to 100 parts by mass of the content of the energy ray-curable compound, the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0164] [Other additives]

[0165] The pressure-sensitive adhesive composition (I-1) may also contain other additives that do not belong to any of the above components within the range that does not impair the effects of the present invention.

[0166] As the other additives, examples thereof include known additives such as antistatic agents, antioxidants, softeners (plasticizers), filling materials (fillers), rust inhibitors, coloring agents (pigments, dyes), sensitizers, tackifiers, reaction retardants, crosslinking promoters (catalysts), etc.

[0167] In addition, a reaction retarder refers to a component that inhibits an unintended crosslinking reaction in the pressure-sensitive adhesive composition (I-1) during storage, for example, due to the action of a catalyst mixed in the pressure-sensitive adhesive composition (I-1). As the reaction retarder, for example, a reaction retarder that forms a chelate complex with a chelate using a chelating agent corresponding to the catalyst can be cited. More specifically, a reaction retarder having two or more carbonyl groups (-C(=O)-) in one molecule can be cited.

[0168] The other additives contained in the pressure-sensitive adhesive composition (I-1) can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0169] The content of the other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited, and can be appropriately selected according to their types.

[0170] [Solvent]

[0171] The pressure-sensitive adhesive composition (I-1) may contain a solvent. By containing a solvent, the coating suitability of the pressure-sensitive adhesive composition (I-1) for the coating target surface is improved.

[0172] The solvent is preferably an organic solvent.

[0173] <Pressure-sensitive adhesive composition (I-2)>

[0174] As described above, the pressure-sensitive adhesive composition (I-2) contains a radiation-curable pressure-sensitive adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of a non-radiation-curable pressure-sensitive adhesive resin (I-1a).

[0175] [Pressure-sensitive adhesive resin (I-2a)]

[0176] The pressure-sensitive adhesive resin (I-2a) can be obtained, for example, by reacting a compound containing an unsaturated group having a radiation-polymerizable unsaturated group with a functional group in the pressure-sensitive adhesive resin (I-1a).

[0177] The compound containing an unsaturated group is a compound that further has a group capable of bonding to the pressure-sensitive adhesive resin (I-1a) by reacting with a functional group in the pressure-sensitive adhesive resin (I-1a) in addition to having the radiation-polymerizable unsaturated group.

[0178] As the radiation-polymerizable unsaturated group, for example, (meth)acryloyl group, vinyl (ethylene group), allyl group (2-propenyl group), etc. can be cited, and (meth)acryloyl group is preferred.

[0179] Examples of the group that can bond to the functional group in the pressure-sensitive adhesive resin (I-1a) include an isocyanate group and a glycidyl group that can bond to a hydroxyl group or an amino group, and a hydroxyl group and an amino group that can bond to a carboxyl group or an epoxy group.

[0180] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0181] The pressure-sensitive adhesive resin (I-2a) contained in the pressure-sensitive adhesive composition (I-2) may be only one kind or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0182] In the pressure-sensitive adhesive composition (I-2), the content of the pressure-sensitive adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass, relative to the total mass of the pressure-sensitive adhesive composition (I-2).

[0183] [Crosslinking agent]

[0184] For example, when the acrylic polymer having the same structure unit derived from the functional group-containing monomer as that in the pressure-sensitive adhesive resin (I-1a) is used as the pressure-sensitive adhesive resin (I-2a), the pressure-sensitive adhesive composition (I-2) may further contain a crosslinking agent.

[0185] Examples of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) include the same crosslinking agents as those in the pressure-sensitive adhesive composition (I-1).

[0186] The crosslinking agent contained in the pressure-sensitive adhesive composition (I-2) may be only one kind or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0187] When using a crosslinking agent, in the pressure-sensitive adhesive composition (I-2), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the content of the pressure-sensitive adhesive resin (I-2a).

[0188] [Photoinitiator]

[0189] The pressure-sensitive adhesive composition (I-2) may further contain a photoinitiator. Even when irradiated with energy rays such as ultraviolet rays having relatively low energy, the pressure-sensitive adhesive composition (I-2) containing the photoinitiator can sufficiently undergo a curing reaction.

[0190] As the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2), the same photopolymerization initiators as those in the pressure-sensitive adhesive composition (I-1) can be cited.

[0191] The pressure-sensitive adhesive composition (I-2) may contain only one kind of photopolymerization initiator, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0192] When using a photopolymerization initiator, in the pressure-sensitive adhesive composition (I-2), based on 100 parts by mass of the content of the pressure-sensitive adhesive resin (I-2a), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0193] [Other additives, solvents]

[0194] The pressure-sensitive adhesive composition (I-2) may also contain other additives that do not belong to any of the above components within the range that does not impair the effects of the present invention.

[0195] In addition, for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-2) may also contain a solvent.

[0196] As the other additives and solvents in the pressure-sensitive adhesive composition (I-2), the same other additives and solvents as those in the pressure-sensitive adhesive composition (I-1) can be cited respectively.

[0197] The other additives and solvents contained in the pressure-sensitive adhesive composition (I-2) may each be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0198] The contents of the other additives and solvents in the pressure-sensitive adhesive composition (I-2) are not particularly limited, and can be appropriately selected according to their types.

[0199] <Pressure-sensitive adhesive composition (I-3)>

[0200] As described above, the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and an energy ray curable compound.

[0201] In the pressure-sensitive adhesive composition (I-3), the proportion of the content of the pressure-sensitive adhesive resin (I-2a) relative to the total mass of the pressure-sensitive adhesive composition (I-3) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0202] [Energy ray curable compound]

[0203] As the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3), monomers or oligomers having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays can be cited, and the same energy ray-curable compounds as those contained in the pressure-sensitive adhesive composition (I-1) can be cited.

[0204] The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0205] In the pressure-sensitive adhesive composition (I-3), relative to 100 parts by mass of the content of the pressure-sensitive adhesive resin (I-2a), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass.

[0206] [Photoinitiator]

[0207] The pressure-sensitive adhesive composition (I-3) may further contain a photoinitiator. Even when irradiated with energy rays of relatively low energy such as ultraviolet rays, the pressure-sensitive adhesive composition (I-3) containing a photoinitiator can sufficiently undergo a curing reaction.

[0208] As the photoinitiator in the pressure-sensitive adhesive composition (I-3), the same photoinitiators as those in the pressure-sensitive adhesive composition (I-1) can be cited.

[0209] The photoinitiator contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0210] When using a photoinitiator, in the pressure-sensitive adhesive composition (I-3), relative to 100 parts by mass of the total content of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound, the content of the photoinitiator is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

[0211] [Other additives, solvents]

[0212] The pressure-sensitive adhesive composition (I-3) may also contain other additives that do not belong to any of the above components within the range that does not impair the effects of the present invention.

[0213] In addition, for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-3) may contain a solvent.

[0214] As the other additives and solvents in the pressure-sensitive adhesive composition (I-3), the same other additives and solvents as those in the pressure-sensitive adhesive composition (I-1) can be cited respectively.

[0215] The other additives and solvents contained in the pressure-sensitive adhesive composition (I-3) can each be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0216] The content of the other additives and solvents in the pressure-sensitive adhesive composition (I-3) is not particularly limited, and can be appropriately selected according to their types.

[0217] <Pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3)>

[0218] So far, the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-2), and the pressure-sensitive adhesive composition (I-3) have been mainly described. However, the components described as their contained components can also be used in all pressure-sensitive adhesive compositions other than these three pressure-sensitive adhesive compositions (in this specification, referred to as "pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3)").

[0219] As pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3), in addition to energy ray-curable pressure-sensitive adhesive compositions, non-energy ray-curable pressure-sensitive adhesive compositions can also be cited.

[0220] As non-energy ray-curable pressure-sensitive adhesive compositions, for example, a pressure-sensitive adhesive composition (I-4) containing a non-energy ray-curable pressure-sensitive adhesive resin (I-1a) such as an acrylic resin, a urethane resin, a rubber resin, a silicone resin, an epoxy resin, a polyethylene ether, a polycarbonate, an ester resin, etc. can be cited. A non-energy ray-curable pressure-sensitive adhesive composition containing an acrylic resin is preferred.

[0221] Preferably, the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) contain one or two or more crosslinking agents, and their content can be set to be the same as that of the above-mentioned pressure-sensitive adhesive composition (I-1) and the like.

[0222] <Pressure-sensitive adhesive composition (I-4)>

[0223] As a preferred pressure-sensitive adhesive composition (I-4), for example, a pressure-sensitive adhesive composition containing the pressure-sensitive adhesive resin (I-1a) and a crosslinking agent can be cited.

[0224] [Pressure-sensitive adhesive resin (I-1a)]

[0225] As the pressure-sensitive adhesive resin (I-1a) in the pressure-sensitive adhesive composition (I-4), the same pressure-sensitive adhesive resins as those in the pressure-sensitive adhesive resin (I-1a) in the pressure-sensitive adhesive composition (I-1) can be cited.

[0226] The pressure-sensitive adhesive resin (I-1a) contained in the pressure-sensitive adhesive composition (I-4) may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0227] In the pressure-sensitive adhesive composition (I-4), the content ratio of the pressure-sensitive adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-4) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.

[0228] [Crosslinking agent]

[0229] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an (alkyl) acrylate is used as the pressure-sensitive adhesive resin (I-1a), it is preferred that the pressure-sensitive adhesive composition (I-4) further contains a crosslinking agent.

[0230] As the crosslinking agent in the pressure-sensitive adhesive composition (I-4), the same crosslinking agents as those in the pressure-sensitive adhesive composition (I-1) can be cited.

[0231] The crosslinking agent contained in the pressure-sensitive adhesive composition (I-4) may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0232] In the pressure-sensitive adhesive composition (I-4), with respect to 100 parts by mass of the content of the pressure-sensitive adhesive resin (I-1a), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass.

[0233] [Other additives, solvents]

[0234] The pressure-sensitive adhesive composition (I-4) may also contain other additives that do not belong to any of the above components within the range that does not impair the effects of the present invention.

[0235] In addition, for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-4) may also contain a solvent.

[0236] As the other additives and solvents in the pressure-sensitive adhesive composition (I-4), the same additives and solvents as those in the pressure-sensitive adhesive composition (I-1) can be cited respectively.

[0237] The other additives and solvents contained in the adhesive composition (I-4) may each be only one kind or two or more kinds. When there are two or more kinds, their combinations and ratios can be arbitrarily selected.

[0238] The contents of the other additives and solvents of the adhesive composition (I-4) are not particularly limited and can be appropriately selected according to their types.

[0239] <<Preparation method of the adhesive composition>>

[0240] The adhesive compositions (I-1) to (I-3), or adhesive compositions other than the adhesive compositions (I-1) to (I-3) such as the adhesive composition (I-4), can be obtained by blending the respective components for constituting the adhesive composition, that is, by blending the adhesive and components other than the adhesive as required.

[0241] The addition order when blending the respective components is not particularly limited, and two or more components can be added simultaneously.

[0242] When using a solvent, it can be used by pre-diluting the blending component by mixing the solvent with any blending component other than the solvent, or it can be used by mixing the solvent with these blending components without pre-diluting any blending component other than the solvent.

[0243] When performing blending, the method of mixing the respective components is not particularly limited, and it can be appropriately selected from the following known methods: a method of mixing by rotating a stir bar or stirring blade, etc.; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves, etc.

[0244] As long as each blending component does not deteriorate, the temperature and time when adding and mixing the respective components are not particularly limited and can be appropriately adjusted, but preferably the temperature is 15 to 30°C.

[0245] ○ Intermediate layer, composition for forming intermediate layer

[0246] The intermediate layer is in the form of a sheet or film and contains the non-silicon resin as the main component.

[0247] The intermediate layer can be a layer containing only the non-silicon resin (a layer formed by the non-silicon resin), or can be a layer containing the non-silicon resin and components other than the non-silicon resin.

[0248] The intermediate layer can be formed, for example, using a composition for forming an intermediate layer containing the non-silicon resin. For example, the intermediate layer can be formed by coating the composition for forming an intermediate layer on the surface of the object where the intermediate layer is to be formed and drying as required.

[0249] The weight-average molecular weight of the non-silicon resin is 100,000 or less.

[0250] From the viewpoints of further improving the dicing suitability of the semiconductor wafer of the sheet for manufacturing the semiconductor device and suppressing the generation of debris when cutting the film-like adhesive, the weight-average molecular weight of the non-silicon resin can be, for example, in any one of the ranges of 80,000 or less, 60,000 or less, and 40,000 or less.

[0251] The lower limit value of the weight-average molecular weight of the non-silicon resin is not particularly limited. For example, the non-silicon resin having a weight-average molecular weight of 5,000 or more is more easily obtained.

[0252] The weight-average molecular weight of the non-silicon resin can be appropriately adjusted within a range set by arbitrarily combining the above lower limit value and any upper limit value. For example, in one embodiment, the weight-average molecular weight can be, for example, in any one of the ranges of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

[0253] In the present embodiment, "the intermediate layer contains a non-silicon resin having a weight-average molecular weight of 100,000 or less as a main component" means that "the non-silicon resin is contained in an amount sufficient to fully exhibit the effects resulting from the intermediate layer containing the non-silicon resin having a weight-average molecular weight of 100,000 or less". From the above viewpoints, in the intermediate layer, the proportion of the non-silicon resin relative to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the proportion of the non-silicon resin relative to the total content of all components other than the solvent) is preferably 50% by mass or more, more preferably 80% by mass or more, still more preferably 90% by mass or more, and can be, for example, in any one of the ranges of 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0254] On the other hand, the proportion is 100% by mass or less.

[0255] The non-silicon resin having a weight-average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component having no silicon atom as a constituent atom and having a weight-average molecular weight of 100,000 or less.

[0256] The non-silicon resin can be, for example, any one of a polar resin having a polar group and a non-polar resin having no polar group.

[0257] For example, from the viewpoints of high solubility in the composition for forming the intermediate layer and higher coating suitability of the composition for forming the intermediate layer, the non-silicon resin is preferably a polar resin.

[0258] In this specification, unless otherwise specified, the "non-silicon resin" refers to the non-silicon resin having a weight average molecular weight of 100,000 or less as described above.

[0259] The non-silicon resin can be, for example, a homopolymer that is a polymer of one monomer (in other words, having only one type of structural unit), or a copolymer that is a polymer of two or more monomers (in other words, having two or more types of structural units).

[0260] As the polar group, for example, carbonyl oxy (-C(=O)-O-), oxycarbonyl (-O-C(=O)-), etc. can be cited.

[0261] The polar resin can have only structural units having a polar group, or can have both structural units having a polar group and structural units not having a polar group.

[0262] As the structural unit having the polar group, for example, a structural unit derived from vinyl acetate can be cited.

[0263] As the structural unit not having the polar group, for example, a structural unit derived from ethylene can be cited.

[0264] "Derivative" here means that the monomer has undergone the structural changes required for polymerization.

[0265] In the polar resin, the proportion of the mass of the structural unit having a polar group relative to the total mass of all structural units is preferably 5 to 70% by mass. For example, it can be any range of 7.5 to 55% by mass, 10 to 40% by mass, and 10 to 30% by mass. In other words, in the polar resin, the proportion of the mass of the structural unit not having a polar group relative to the total mass of all structural units is preferably 30 to 95% by mass. For example, it can be any range of 45 to 92.5% by mass, 60 to 90% by mass, and 70 to 90% by mass. By making the proportion of the mass of the structural unit having a polar group be above the lower limit value, the polar resin more significantly has the property of having a polar group. By making the proportion of the mass of the structural unit having a polar group be below the upper limit value, the polar resin more moderately has the property of not having a polar group.

[0266] As the polar resin, for example, ethylene-vinyl acetate copolymer can be cited.

[0267] The proportion of the content of ethylene-vinyl acetate copolymer relative to the total mass of the non-silicon resin contained in the intermediate layer can be, for example, 50 to 100% by mass, can be 80 to 100% by mass, and can be 90 to 100% by mass.

[0268] Among them, as the preferred polar resin, for example, a polar resin in which the proportion of the structural unit derived from vinyl acetate to the total mass of all structural units (in this specification, sometimes referred to as "the content of the structural unit derived from vinyl acetate") is 40% by mass or less, a polar resin in which this proportion is 30% by mass or less, a polar resin in which this proportion is 10 to 40% by mass, and a polar resin in which this proportion is 10 to 30% by mass can be cited. In other words, as the preferred polar resin, for example, a polar resin in which the proportion of the structural unit derived from ethylene to the total mass of all structural units in the ethylene-vinyl acetate copolymer is 60% by mass or more, a polar resin in which this proportion is 70% by mass or more, a polar resin in which this proportion is 70 to 90% by mass, and a polar resin in which this proportion is 60 to 90% by mass can be cited.

[0269] By making the proportion of the content of the structural unit derived from vinyl acetate be below the upper limit value, even when cutting the film-like adhesive by laser irradiation and debris is generated from the intermediate layer, the adhesiveness of the generated debris is moderately reduced, and it is easy to remove the debris from the chip by washing or the like.

[0270] As the non-polar resin, for example, polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); polypropylene (PP), etc. can be cited.

[0271] The composition for forming the intermediate layer and the non-silicon resin contained in the intermediate layer can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0272] For example, the composition for forming the intermediate layer and the intermediate layer can contain one kind or two or more kinds of non-silicon resins as polar resins and do not contain non-silicon resins as non-polar resins, or can contain one kind or two or more kinds of non-silicon resins as non-polar resins and do not contain non-silicon resins as polar resins, or can also contain one kind or two or more kinds of non-silicon resins as polar resins and one kind or two or more kinds of non-silicon resins as non-polar resins at the same time.

[0273] The composition for forming the intermediate layer and the intermediate layer preferably contain at least a non-silicon resin as a polar resin.

[0274] In the composition for forming the intermediate layer and the intermediate layer, the proportion of the non-silicon resin as the polar resin relative to the total content of the non-silicon resins is preferably 50% by mass or more, preferably 80% by mass or more, more preferably 90% by mass or more. For example, it can be in any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By making the proportion above the lower limit value, the effects brought about by using the polar resin can be obtained more significantly.

[0275] On the other hand, the proportion is 100% by mass or less.

[0276] That is, in the composition for forming the intermediate layer and the intermediate layer, the proportion of the non-silicon resin as the non-polar resin relative to the total content of the non-silicon resins is preferably 20% by mass or less, more preferably 10% by mass or less. For example, it can be in any range of 5% by mass or less, 3% by mass or less, and 1% by mass or less.

[0277] On the other hand, the proportion is 0% by mass or more.

[0278] From the viewpoint of good operability of the composition for forming the intermediate layer, the composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicon resin, and may also contain a component that does not belong to either the non-silicon resin or the solvent (in this specification, sometimes referred to as an "additive").

[0279] The intermediate layer may contain only the non-silicon resin, or may contain both the non-silicon resin and the additive.

[0280] The additive may be either a resin component (sometimes referred to as "other resin component") or a non-resin component in this specification.

[0281] As the other resin component, for example, non-silicon resins and silicon resins having a weight average molecular weight (Mw) greater than 100,000 can be cited.

[0282] The non-silicon resin having a weight average molecular weight greater than 100,000 is not particularly limited as long as it satisfies such conditions.

[0283] As described below, the intermediate layer containing the silicon resin is more likely to pick up the semiconductor chip with a film-like adhesive.

[0284] The silicon resin is not particularly limited as long as it is a resin component having a silicon atom as a constituent atom. For example, the weight average molecular weight of the silicon resin is not particularly limited.

[0285] As a preferred silicone resin, for example, a resin component that exhibits a mold release effect on the adhesive component can be cited, and more preferably a siloxane resin (also referred to as a resin component having a siloxane bond (-Si-O-Si-), a siloxane compound).

[0286] As the siloxane resin, for example, polydialkylsiloxane and the like can be cited. The number of carbon atoms of the alkyl group in the polydialkylsiloxane is preferably 1 to 20.

[0287] As the polydialkylsiloxane, polydimethylsiloxane and the like can be cited.

[0288] The non-resin component can be, for example, any one of an organic compound and an inorganic compound, and is not particularly limited.

[0289] The composition for forming the intermediate layer and the additive contained in the intermediate layer can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0290] For example, the composition for forming the intermediate layer and the intermediate layer can contain one or more resin components as the additive and do not contain a non-resin component, or can contain one or more non-resin components as the additive and do not contain a resin component, or can also contain one or more resin components and one or more non-resin components as the additive at the same time.

[0291] When the composition for forming the intermediate layer and the intermediate layer contain the additive, in the intermediate layer, the content ratio of the non-silicone resin to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the content ratio of the non-silicone resin to the total content of all components except the solvent) is preferably 90 to 99.99% by mass. For example, it can be any range among 90 to 97.5% by mass, 90 to 95% by mass, and 90 to 92.5% by mass, can be any range among 92.5 to 99.99% by mass, 95 to 99.99% by mass, and 97.5 to 99.99% by mass, and can be 92.5 to 97.5% by mass.

[0292] When the composition for forming the intermediate layer and the intermediate layer contain the additive, in the intermediate layer, the content ratio of the additive to the total mass of the intermediate layer (in other words, in the composition for forming the intermediate layer, the content ratio of the additive to the total content of all components except the solvent) is preferably 0.01 to 10% by mass. For example, it can be any range among 2.5 to 10% by mass, 5 to 10% by mass, and 7.5 to 10% by mass, can be any range among 0.01 to 7.5% by mass, 0.01 to 5% by mass, and 0.01 to 2.5% by mass, and can be 2.5 to 7.5% by mass.

[0293] The solvent contained in the composition for forming the intermediate layer is not particularly limited, but as preferred solvents, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, etc.

[0294] The solvent contained in the composition for forming the intermediate layer may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0295] From the viewpoint of being able to mix the components contained in the composition for forming the intermediate layer more uniformly, the solvent contained in the composition for forming the intermediate layer is preferably tetrahydrofuran or the like.

[0296] The content of the solvent in the composition for forming the intermediate layer is not particularly limited, and can be appropriately selected according to the types of components other than the solvent, for example.

[0297] As described below, from the viewpoint of being able to more easily pick up the semiconductor chip with the film-like adhesive, as a preferred intermediate layer, for example, the following intermediate layer can be cited: an intermediate layer containing an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, and the content of the ethylene-vinyl acetate copolymer (the non-silicon resin) in the intermediate layer is within any one of the above numerical ranges with respect to the total mass of the intermediate layer, and the content of the siloxane compound (the additive) in the intermediate layer is within any one of the above numerical ranges with respect to the total mass of the intermediate layer.

[0298] As such an intermediate layer, for example, the following intermediate layer can be cited: an intermediate layer containing an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99 mass% with respect to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10 mass% with respect to the total mass of the intermediate layer. However, this is only a preferred example of the intermediate layer.

[0299] As a more preferred intermediate layer, for example, the following intermediate layer can be cited: the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, and in the ethylene-vinyl acetate copolymer, the proportion of the structural unit derived from vinyl acetate relative to the total mass of all structural units (in other words, the content of the structural unit derived from vinyl acetate) is 10 to 40% by mass, and in the intermediate layer, the proportion of the content of the ethylene-vinyl acetate copolymer relative to the total mass of the intermediate layer is 90 to 99.99% by mass, and in the intermediate layer, the proportion of the content of the siloxane compound relative to the total mass of the intermediate layer is 0.01 to 10% by mass. However, this is only a more preferred example of the intermediate layer.

[0300] For a wafer for semiconductor device manufacturing, when analyzing the surface on the film adhesive side of the intermediate layer by X-ray Photoelectron Spectroscopy (in this specification, sometimes referred to as "XPS"), the proportion of the silicon concentration (in this specification, sometimes simply referred to as "the proportion of silicon concentration") relative to the total concentration of carbon, oxygen, nitrogen, and silicon, on a molar basis of elements, is preferably 1 to 20%. As described below, by using a wafer for semiconductor device manufacturing having such an intermediate layer, it is possible to easily pick up a semiconductor chip with a film adhesive. Figure 1 The proportion of the silicon concentration can be calculated using the following formula.

[0301] [Measured value of silicon concentration (atomic%) based on XPS analysis] / {[Measured value of carbon concentration (atomic%) based on XPS analysis] + [Measured value of oxygen concentration (atomic%) based on XPS analysis] + [Measured value of nitrogen concentration (atomic%) based on XPS analysis] + [Measured value of silicon concentration (atomic%) based on XPS analysis]} × 100

[0302] For XPS analysis, an X-ray photoelectron spectroscopy analyzer (for example, "Quantra SXM" manufactured by ULVAC, Inc.) can be used to perform XPS analysis on the surface of the film adhesive side of the intermediate layer under the conditions of an irradiation angle of 45° and an X-ray beam diameter of

[0303] and an output of 4.5 W.

[0304] ​Starting from the fact that the above effects are more significant, the ratio of the silicon concentration, based on the molar basis of the elements, can be, for example, any range among 4 to 20%, 8 to 20%, and 12 to 20%, can be any range among 1 to 16%, 1 to 12%, and 1 to 8%, and can be any range among 4 to 16% and 8 to 12%.

[0305] When performing XPS analysis in the above manner, in the surface of the intermediate layer (the surface to be analyzed by XPS), other elements that do not belong to any of carbon, oxygen, nitrogen, and silicon may sometimes be detected. However, even if the above other elements are detected, usually their concentrations are trace amounts. Therefore, when calculating the ratio of the silicon concentration, as long as the measured values of the concentrations of carbon, oxygen, nitrogen, and silicon are used, the ratio of the silicon concentration can be calculated with high precision.

[0306] The intermediate layer can be composed of one layer (single layer) or can be composed of two or more layers. When composed of multiple layers, these multiple layers can be the same as each other or different from each other, and the combination of these multiple layers is not particularly limited.

[0307] Similar to what was described above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate.

[0308] The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer can be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in the direction parallel to the surface attached to the semiconductor device manufacturing sheet.

[0309] However, as described above, after cutting accompanied by the formation of a modified layer in the semiconductor wafer, when cutting the film-like adhesive by expanding the semiconductor device manufacturing sheet, as described below, the cut semiconductor chips (semiconductor chip groups) are grouped together, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

[0310] Similarly, when cutting the film-like adhesive by laser irradiation after obtaining semiconductor chips by applying the prior cutting method (DBG), as described below, the cut semiconductor chip groups are grouped together, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

[0311] In this specification, unless otherwise specified, the "width of the intermediate layer" refers to, for example, "the width of the intermediate layer in the direction parallel to the first surface of the intermediate layer". For example, in the case of an intermediate layer with a circular planar shape, the maximum value of the width of the above intermediate layer is the diameter of the circle of the planar shape.

[0312] This is the same in the case of a semiconductor wafer. That is, the "width of the semiconductor wafer" means

[0313] "the width of the semiconductor wafer in the direction parallel to the surface of the semiconductor wafer attached to the sheet for manufacturing a semiconductor device". For example, in the case of a semiconductor wafer having a circular planar shape, the maximum value of the width of the semiconductor wafer is the diameter of the circle as the planar shape.

[0314] The maximum value of the width of the intermediate layer of 150 to 160 mm means equal to or greater than the maximum value of the width of the semiconductor wafer of 150 mm within a range not exceeding 10 mm.

[0315] Similarly, the maximum value of the width of the intermediate layer of 200 to 210 mm means equal to or greater than the maximum value of the width of the semiconductor wafer of 200 mm within a range not exceeding 10 mm.

[0316] Similarly, the maximum value of the width of the intermediate layer of 300 to 310 mm means equal to or greater than the maximum value of the width of the semiconductor wafer of 300 mm within a range not exceeding 10 mm.

[0317] That is, in the present embodiment, regardless of which value of 150 mm, 200 mm, and 300 mm the maximum value of the width of the semiconductor wafer is, the difference between the maximum value of the width of the intermediate layer and the maximum value of the width of the semiconductor wafer can be, for example, 0 to 10 mm.

[0318] The thickness of the intermediate layer can be appropriately selected according to the purpose, and is preferably 5 to 150 μm, more preferably 5 to 120 μm. For example, it can be any range of 10 to 90 μm and 10 to 60 μm, and can be any range of 30 to 120 μm and 60 to 120 μm. By making the thickness of the intermediate layer above the lower limit value, the structure of the intermediate layer becomes more stable. By making the thickness of the intermediate layer below the upper limit value, it is easier to cut the film-like adhesive when performing blade cutting and expansion of the sheet for manufacturing a semiconductor device.

[0319] Here, the "thickness of the intermediate layer" refers to the thickness of the entire intermediate layer. For example, in the case of an intermediate layer composed of multiple layers, the thickness of the intermediate layer refers to the total thickness of all the layers constituting the intermediate layer.

[0320] When the intermediate layer contains the silicone resin, especially when the compatibility of the silicone resin with the non-silicone resin as the main component is low, in the semiconductor device manufacturing wafer, the silicone resin in the intermediate layer is likely to be unevenly present on both sides (the first side and the side opposite to the first side) of the intermediate layer and the adjacent regions thereof. Moreover, the stronger this tendency is, the easier it is for the film-like adhesive adjacent to the intermediate layer (in direct contact with the intermediate layer) to peel off from the intermediate layer. As described below, it becomes easier to pick up the semiconductor chip with the film-like adhesive.

[0321] For example, when comparing intermediate layers that are identical in aspects other than thickness, such as composition and the area of both sides, but only differ in thickness, the proportion (mass %) of the silicone resin content relative to the total mass of the intermediate layer is the same among these intermediate layers. However, regarding the content (parts by mass) of the silicone resin in the intermediate layer, the content (parts by mass) of the thicker intermediate layer is more than that of the thinner intermediate layer. Therefore, when the silicone resin is likely to be unevenly present in the intermediate layer as described above, compared with the thinner intermediate layer, the amount of the silicone resin unevenly present on both sides (the first side and the side opposite to the first side) and the adjacent regions thereof in the thicker intermediate layer is more. Thus, even without changing the proportion, the pick-up suitability of the semiconductor chip with the film-like adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing wafer. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing wafer, it becomes easier to pick up the semiconductor chip with the film-like adhesive.

[0322] The intermediate layer is formed using an adhesive composition containing its constituent materials. For example, a film-like adhesive can be formed at the target site by coating the adhesive composition on the surface of the object where the film-like adhesive is to be formed and drying it as needed.

[0323] The coating of the intermediate layer-forming composition can be carried out by the same method as the coating of the above-mentioned adhesive composition.

[0324] The drying conditions of the intermediate layer-forming composition are not particularly limited. When the intermediate layer-forming composition contains the solvent, heat drying is preferably carried out. In this case, for example, it is preferably dried under the conditions of 60 to 130 °C for 1 to 6 minutes.

[0325] ○ Film-like adhesive

[0326] The film-like adhesive has curability, preferably thermosetting property, and preferably pressure-sensitive adhesiveness. The film-like adhesive having both thermosetting property and pressure-sensitive adhesiveness can be attached to various adherends by gently pressing in the uncured state. In addition, the film-like adhesive can also be an adhesive that can be softened by heating and attached to various adherends. The film-like adhesive finally forms a cured product with high impact resistance through curing, and this cured product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

[0327] When looking down on the semiconductor device manufacturing sheet from above, the area of the film-like adhesive (i.e., the area of the first surface) is preferably set to be smaller than the area of the base material (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface) in a manner close to the area of the semiconductor wafer before dicing. In such a semiconductor device manufacturing sheet, there is a region (i.e., the non-laminated region) on a part of the first surface of the adhesive layer that is not in contact with the intermediate layer and the film-like adhesive. Thus, the expansion of the semiconductor device manufacturing sheet becomes easier, and at the same time, the force applied to the film-like adhesive during expansion does not disperse, so it is easier to cut the film-like adhesive.

[0328] The film-like adhesive can be formed using an adhesive composition containing its constituent materials. For example, the adhesive composition can be coated on the target surface where the film-like adhesive is to be formed, and dried as needed, so as to form a film-like adhesive at the target site.

[0329] The coating of the adhesive composition can be carried out by the same method as the coating of the above-mentioned adhesive composition.

[0330] The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described later, heating drying is preferably carried out. At this time, for example, it is preferably dried at 70 - 130 °C for 10 seconds to 5 minutes.

[0331] The film-like adhesive can be composed of one layer (single layer), or can be composed of two or more layers. When composed of multiple layers, these multiple layers can be the same as each other or different from each other, and the combination of these multiple layers is not particularly limited.

[0332] As described above, the maximum value of the width of the film-like adhesive is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the base material.

[0333] The maximum value of the width of the film-like adhesive can be the same as the maximum value of the width of the intermediate layer described above with respect to the size of the semiconductor wafer.

[0334] That is, the maximum value of the width of the film-shaped adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the film-shaped adhesive can be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in the direction parallel to the surface to which the film-shaped adhesive is attached to the sheet for manufacturing semiconductor devices.

[0335] In this specification, unless otherwise specified, the "width of the film-shaped adhesive" refers to, for example,

[0336] "the width of the film-shaped adhesive in the direction parallel to the first surface of the film-shaped adhesive". For example, in the case of a film-shaped adhesive having a circular planar shape, the maximum value of the width of the above-mentioned film-shaped adhesive is the diameter of the circle of the planar shape.

[0337] Furthermore, unless otherwise specified, the "width of the film-shaped adhesive" refers to the "width of the film-shaped adhesive before cutting (uncut)", rather than the width of the film-shaped adhesive after cutting during the manufacturing process of the semiconductor chip with the film-shaped adhesive.

[0338] The maximum value of the width of the film-shaped adhesive of 150 to 160 mm means that it is equal to or greater than the maximum value of the width of the semiconductor wafer of 150 mm within a range not exceeding 10 mm.

[0339] Similarly, the maximum value of the width of the film-shaped adhesive of 200 to 210 mm means that it is equal to or greater than the maximum value of the width of the semiconductor wafer of 200 mm within a range not exceeding 10 mm.

[0340] Similarly, the maximum value of the width of the film-shaped adhesive of 300 to 310 mm means that it is equal to or greater than the maximum value of the width of the semiconductor wafer of 300 mm within a range not exceeding 10 mm.

[0341] That is, in this embodiment, regardless of which value among 150 mm, 200 mm, and 300 mm is the maximum value of the width of the semiconductor wafer, the difference between the maximum value of the width of the film-shaped adhesive and the maximum value of the width of the semiconductor wafer can be, for example, 0 to 10 mm.

[0342] In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film-shaped adhesive can both be any of the above numerical ranges.

[0343] That is, as an example of the sheet for manufacturing semiconductor devices in this embodiment, a sheet for manufacturing semiconductor devices in which the maximum value of the width of the intermediate layer and the maximum value of the width of the film-shaped adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm can be cited.

[0344] The thickness of the film-like adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. By making the thickness of the film-like adhesive equal to or greater than the lower limit value, a higher adhesive force to the adherend (semiconductor chip) can be obtained. By making the thickness of the film-like adhesive equal to or less than the upper limit value, it is easier to cut the film-like adhesive during dicing and during the expansion of the semiconductor device manufacturing wafer.

[0345] Herein, the "thickness of the film-like adhesive" refers to the thickness of the entire film-like adhesive. For example, in the case of a film-like adhesive composed of multiple layers, the thickness refers to the total thickness of all the layers constituting the film-like adhesive.

[0346] Next, the adhesive composition will be described.

[0347] The following adhesive composition can contain one or more of the following components in such a manner that the total content (mass%) does not exceed 100 mass%.

[0348] [[Adhesive Composition]]

[0349] As a preferred adhesive composition, for example, an adhesive composition containing a polymer component (a) and a thermosetting component (b) can be cited. Hereinafter, each component will be described.

[0350] In addition, the adhesive compositions shown below are only preferred examples, and the adhesive composition of the present embodiment is not limited to the adhesive compositions shown below.

[0351] [Polymer Component (a)]

[0352] The polymer component (a) is regarded as a component formed by polymerizing a polymerizable compound, and is a polymer compound that imparts film-forming properties, flexibility, etc. to the film-like adhesive and improves the adhesiveness (in other words, attachability) to a bonding object such as a semiconductor chip. The polymer component (a) has thermoplasticity but does not have thermosetting properties.

[0353] The polymer component (a) contained in the adhesive composition and the film-like adhesive can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0354] As the polymer component (a), for example, acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, etc. can be cited.

[0355] Among them, the polymer component (a) is preferably an acrylic resin.

[0356] In the adhesive composition, the proportion of the content of the polymer component (a) relative to the total content of all components except the solvent (i.e., the proportion of the content of the polymer component (a) in the film adhesive relative to the total mass of the film adhesive) is preferably 20 to 75% by mass, more preferably 30 to 65% by mass.

[0357] [Thermosetting component (b)]

[0358] The thermosetting component (b) is a component having thermosetting properties and is used to thermally cure the film adhesive.

[0359] The thermosetting component (b) contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0360] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, unsaturated polyester resins, etc.

[0361] Among them, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0362] 〇Epoxy-based thermosetting resin

[0363] The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2).

[0364] The epoxy-based thermosetting resin contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0365] ·Epoxy resin (b1)

[0366] As the epoxy resin (b1), known epoxy resins can be cited. For example, polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrides, o-cresol novolak epoxy resins, dicyclopentadiene-type epoxy resins, biphenyl-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, epoxy compounds having a biphenyl skeleton or more bifunctional groups can be cited.

[0367] As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The compatibility of the epoxy resin having an unsaturated hydrocarbon group with the acrylic resin is greater than that of the epoxy resin without an unsaturated hydrocarbon group with the acrylic resin. Therefore, by using the epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using the film adhesive is increased.

[0368] The epoxy resin (b1) contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0369] · Heat curing agent (b2)

[0370] The heat curing agent (b2) functions as a curing agent for the epoxy resin (b1).

[0371] As the heat curing agent (b2), for example, compounds having two or more functional groups capable of reacting with epoxy groups in one molecule can be cited. As the said functional groups, for example, phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, groups formed by acid anhydration, etc. can be cited. Phenolic hydroxyl groups, amino groups or groups formed by acid anhydration, etc. are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0372] As phenolic curing agents having phenolic hydroxyl groups in the heat curing agent (b2), for example, polyfunctional phenolic resins, biphenol, novolak-type phenolic resins, dicyclopentadiene-type phenolic resins, aralkyl-type phenolic resins, etc. can be cited.

[0373] As amine curing agents having amino groups in the heat curing agent (b2), for example, dicyandiamide (DICY), etc. can be cited.

[0374] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0375] The heat curing agent (b2) contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0376] In the adhesive composition and the film adhesive, relative to 100 parts by mass of the content of the epoxy resin (b1), the content of the heat curing agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, and can be, for example, any range among 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By making the content of the heat curing agent (b2) above the lower limit value, the curing of the film adhesive is easier. By making the content of the heat curing agent (b2) below the upper limit value, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained by using the film adhesive is further increased.

[0377] In the adhesive composition and the film adhesive, with respect to 100 parts by mass of the content of the polymer component (a), the content of the thermosetting component (b) (for example, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, particularly preferably 5 to 50 parts by mass, and can be, for example, any range of 5 to 35 parts by mass and 5 to 20 parts by mass. By making the content of the thermosetting component (b) within the above range, the peel strength between the intermediate layer and the film adhesive becomes more stable.

[0378] In order to improve various physical properties of the film adhesive, in addition to containing the polymer component (a) and the thermosetting component (b), the adhesive composition and the film adhesive may further contain other components that do not belong to the polymer component (a) and the thermosetting component (b) as needed.

[0379] As preferred components among the other components contained in the adhesive composition and the film adhesive, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray curable resin (g), a photoinitiator (h), a general additive (i), etc. can be cited.

[0380] [Curing accelerator (c)]

[0381] The curing accelerator (c) is a component for adjusting the curing rate of the adhesive composition.

[0382] As preferred curing accelerators (c), for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphines in which one or more hydrogen atoms are replaced by organic groups); tetraphenylborate salts such as tetraphenyl phosphonium tetraphenyl borate and triphenylphosphine tetraphenylborate can be cited.

[0383] The curing accelerator (c) contained in the adhesive composition and the film adhesive can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0384] When using the curing accelerator (c), in the adhesive composition and the film adhesive, relative to 100 parts by mass of the content of the thermosetting component (b), the content of the curing accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass. By making the content of the curing accelerator (c) above the lower limit value, the effects brought by using the curing accelerator (c) can be obtained more significantly. By making the content of the curing accelerator (c) below the upper limit value, for example, the effect of suppressing the segregation of the highly polar curing accelerator (c) moving to the adhesive interface side with the adherend under high temperature and high humidity conditions in the film adhesive becomes higher, and the reliability of the package obtained using the film adhesive is further increased.

[0385] [Filler (d)]

[0386] By making the film adhesive contain the filler (d), the cuttability of the expanded film adhesive is further increased. In addition, by making the film adhesive contain the filler (d), it becomes easy to adjust the coefficient of thermal expansion of the film adhesive. By optimizing the coefficient of thermal expansion for the adherend of the film adhesive, the reliability of the package obtained using the film adhesive is further increased. In addition, by making the film adhesive contain the filler (d), the moisture absorption rate of the cured film adhesive can be reduced, or the heat dissipation property can be improved.

[0387] The filler (d) can be any one of organic fillers and inorganic fillers, and inorganic fillers are preferred.

[0388] As preferred inorganic fillers, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, etc. can be cited; beads obtained by spheroidizing these inorganic fillers; surface modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc.

[0389] Among them, the inorganic filler is preferably silica or alumina.

[0390] The filler (d) contained in the adhesive composition and the film adhesive can be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0391] When using the filler (d), in the adhesive composition, the proportion of the content of the filler (d) relative to the total content of all components except the solvent (that is, the proportion of the content of the filler (d) in the film adhesive relative to the total mass of the film adhesive) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. By making the proportion within the above range, the effects brought by using the above filler (d) can be obtained more significantly.

[0392] [Coupling agent (e)]

[0393] By making the film - like adhesive contain the coupling agent (e), its adhesiveness and sealing property to the adherend are increased. In addition, by making the film - like adhesive contain the coupling agent (e), the water resistance of the cured product of the film - like adhesive is increased and the heat resistance is not impaired. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

[0394] The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional groups possessed by the polymer component (a), the thermosetting component (b), etc., and more preferably a silane coupling agent.

[0395] The coupling agent (e) contained in the adhesive composition and the film - like adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0396] When using the coupling agent (e), in the adhesive composition and the film - like adhesive, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b), the content of the coupling agent (e) is preferably 0.03 - 20 parts by mass, more preferably 0.05 - 10 parts by mass, and particularly preferably 0.1 - 5 parts by mass. By making the content of the coupling agent (e) above the lower limit value, the effects brought by using the coupling agent (e), such as improving the dispersibility of the filler (d) in the resin and improving the adhesiveness of the film - like adhesive to the adherend, can be obtained more significantly. By making the content of the coupling agent (e) below the upper limit value, the generation of out - gas can be further suppressed.

[0397] [Cross - linking agent (f)]

[0398] When using a substance having functional groups such as vinyl, (meth) acryloyl, amino, hydroxyl, carboxyl, isocyanate group, etc. that can bond with other compounds, such as the above - mentioned acrylic resin, as the polymer component (a), the adhesive composition and the film - like adhesive may also contain a cross - linking agent (f). The cross - linking agent (f) is a component for bonding and cross - linking the functional groups in the polymer component (a) with other compounds. By cross - linking in this way, the initial adhesiveness and cohesive force of the film - like adhesive can be adjusted.

[0399] Examples of the cross - linking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate - type cross - linking agents (cross - linking agents having a metal chelate structure), aziridine - type cross - linking agents (cross - linking agents having an aziridine group), etc.

[0400] When an organic polyisocyanate compound is used as the crosslinking agent (f), a hydroxyl group-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

[0401] The crosslinking agent (f) contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0402] When using the crosslinking agent (f), in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass with respect to 100 parts by mass of the content of the polymer component (a). By making the content of the crosslinking agent (f) be above the lower limit value, the effect brought by using the crosslinking agent (f) can be obtained more significantly. By making the content of the crosslinking agent (f) be below the upper limit value, excessive use of the crosslinking agent (f) can be suppressed.

[0403] [Energy ray curable resin (g)]

[0404] By making the adhesive composition and the film adhesive contain the energy ray curable resin (g), the film adhesive can change its properties by irradiating energy rays.

[0405] The energy ray curable resin (g) is a resin obtained from an energy ray curable compound.

[0406] As the energy ray curable compound, for example, a compound having at least one polymerizable double bond in the molecule can be cited, and an acrylate compound having a (meth)acryloyl group is preferred.

[0407] The energy ray curable resin (g) contained in the adhesive composition may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0408] When using the energy ray curable resin (g), in the adhesive composition, the proportion of the content of the energy ray curable resin (g) with respect to the total mass of the adhesive composition is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.

[0409] [Photoinitiator (h)]

[0410] When the adhesive composition and the film adhesive contain the energy ray curable resin (g), in order to efficiently promote the polymerization reaction of the energy ray curable resin (g), a photoinitiator (h) can be contained.

[0411] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoate, benzoin benzoate methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acylphosphine oxide compounds such as phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfides such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as butanedione; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylethenyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

[0412] In addition, examples of the photopolymerization initiator (h) include photosensitizers such as amines, etc.

[0413] The photopolymerization initiator (h) contained in the adhesive composition may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0414] When using the photopolymerization initiator (h), in the adhesive composition, relative to 100 parts by mass of the content of the energy ray curable resin (g), the content of the photopolymerization initiator (h) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass.

[0415] [General Additive (i)]

[0416] The general additive (i) can be a publicly known additive, which can be arbitrarily selected according to the purpose and is not particularly limited. However, as preferred additives, examples include plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, etc.

[0417] The general additive (i) contained in the adhesive composition and the film-like adhesive may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0418] The content of the adhesive composition and the film-like adhesive is not particularly limited and can be appropriately selected according to the purpose.

[0419] [Solvent]

[0420] The adhesive composition preferably further contains a solvent. The workability of the adhesive composition containing a solvent becomes good.

[0421] The solvent is not particularly limited, but as preferred solvents, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, etc. can be cited.

[0422] The solvent contained in the adhesive composition may be only one kind, or two or more kinds. When there are two or more kinds, their combination and ratio can be arbitrarily selected.

[0423] From the point that the components contained in the adhesive composition can be more uniformly mixed, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

[0424] The content of the solvent in the adhesive composition is not particularly limited, and can be appropriately selected according to the types of components other than the solvent, for example.

[0425] <<Manufacturing method of the sheet for semiconductor device manufacturing>>

[0426] The sheet for semiconductor device manufacturing can be obtained by blending each component for constituting the adhesive composition.

[0427] For example, the adhesive composition can be prepared by the same method as the adhesive composition described above, except for the difference in the types of blended components.

[0428] ◇Manufacturing method of the sheet for semiconductor device manufacturing

[0429] The sheet for semiconductor device manufacturing can be manufactured by laminating each of the above layers in such a manner that the above respective layers are in a corresponding positional relationship. The formation method of each layer is the same as that described above.

[0430] For example, the sheet for semiconductor device manufacturing can be manufactured by the following method: a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive are respectively prepared in advance, and they are bonded and laminated in the order of the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0431] However, this is only an example of the manufacturing method of the sheet for semiconductor device manufacturing.

[0432] The wafer for manufacturing a semiconductor device can also be manufactured, for example, by the following method: Prepare in advance two or more intermediate laminates each formed by laminating a plurality of layers to form the wafer for manufacturing a semiconductor device, and bond these intermediate laminates to each other. The configuration of the intermediate laminate can be appropriately and arbitrarily selected. For example, a first intermediate laminate (corresponding to the support wafer) having a configuration in which a base material and an adhesive layer are laminated, and a second intermediate laminate having a configuration in which an intermediate layer and a film-like adhesive layer are laminated can be prepared in advance, and the adhesive layer in the first intermediate laminate is bonded to the intermediate layer in the second intermediate laminate, thereby manufacturing the wafer for manufacturing a semiconductor device.

[0433] However, this is only an example of the manufacturing method of the wafer for manufacturing a semiconductor device.

[0434] As the wafer for manufacturing a semiconductor device, for example, when manufacturing a wafer for manufacturing a semiconductor device in which the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both smaller than the area of the first surface of the adhesive layer and the area of the first surface of the base material as shown Figure 1 in the figure, a step of processing the intermediate layer and the film-like adhesive into a target size can be added at any stage in the above manufacturing method. For example, in the manufacturing method using the second intermediate laminate, the wafer for manufacturing a semiconductor device can be manufactured by adding a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate into a target size.

[0435] When manufacturing a wafer for manufacturing a semiconductor device in a state where a release film is provided on the film-like adhesive, for example, the film-like adhesive can be formed on the release film and maintained in this state, and the remaining layers can be laminated to manufacture the wafer for manufacturing a semiconductor device; alternatively, after laminating all of the base material, the adhesive layer, the intermediate layer, and the film-like adhesive, the release film can be laminated on the film-like adhesive to manufacture the wafer for manufacturing a semiconductor device. The release film can be removed at a necessary stage before using the wafer for manufacturing a semiconductor device.

[0436] A wafer for manufacturing a semiconductor device having other layers in addition to the base material, the adhesive layer, the intermediate layer, the film-like adhesive, and the release film can be manufactured by adding a step of forming and laminating the other layer at an appropriate timing in the above manufacturing method.

[0437] ◇ Method of using the wafer for manufacturing a semiconductor device (manufacturing method of a semiconductor chip with a film-like adhesive)

[0438] The wafer for manufacturing a semiconductor device can be used in the manufacturing process of a semiconductor device when manufacturing a semiconductor chip with a film-like adhesive.

[0439] Hereinafter, the method of using the wafer for manufacturing a semiconductor device (manufacturing method of a semiconductor chip with a film-like adhesive) will be described in detail with reference to the accompanying drawings.

[0440] In addition, the third embodiment to which the embodiment of the present invention is applied relates to a method for manufacturing a semiconductor chip with a film-like adhesive.

[0441] (First Embodiment (Manufacturing Method 1): Method Related to Dicing with a Blade)

[0442] The method for manufacturing a semiconductor chip with a film-like adhesive according to this embodiment includes: a step of attaching the back surface of a semiconductor wafer to the exposed surface of the film-like adhesive on a semiconductor device manufacturing sheet, to obtain a laminate formed by laminating the base material, the adhesive layer, the intermediate layer, the film-like adhesive, and the semiconductor wafer in this order;

[0443] a step of dicing the semiconductor wafer and simultaneously cutting the film-like adhesive to obtain a semiconductor chip with a film-like adhesive; and

[0444] a step of picking up the semiconductor chip with a film-like adhesive by pulling it away from the base material, the adhesive layer, and the intermediate layer.

[0445] FIG. 3 is a cross-sectional view schematically illustrating an example of the usage method of a semiconductor device manufacturing sheet, which shows the situation where the semiconductor device manufacturing sheet is attached to a semiconductor wafer and then used. In this method, the semiconductor device manufacturing sheet is used as a dicing support wafer. Here, taking Figure 1 the semiconductor device manufacturing sheet 101 shown as an example, its usage method will be described.

[0446] First, as Figure 3A shown, while heating the semiconductor device manufacturing sheet 101 in a state where the release film 15 has been removed, the film-like adhesive 14 therein is attached to the back surface 9b' of the semiconductor wafer 9'.

[0447] Reference numeral 9a' represents the circuit formation surface of the semiconductor wafer 9'.

[0448] The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but from the viewpoint of further improving the heating and attachment stability of the semiconductor device manufacturing sheet 101, it is preferably 40 to 70°C.

[0449] The maximum value of the width W 13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum value of the width W 14 of the film-like adhesive 14 are exactly the same as the maximum value of the width W 9’ of the semiconductor wafer 9', or although different, the error is slight to almost the same.

[0450] Next, a blade is cut into (blade cutting is performed) the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above from the side of the circuit formation surface 9a' of the semiconductor wafer 9', thereby dividing the semiconductor wafer 9' and simultaneously cutting the film-shaped adhesive 14.

[0451] Blade cutting can be performed by a known method. For example, after fixing the region near the peripheral portion of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-shaped adhesive 14 are not laminated (the non-laminated region) to a jig such as an annular frame (not shown), a blade is used to divide the semiconductor wafer 9' and cut the film-shaped adhesive 14.

[0452] As Figure 3B shown, through this process, a plurality of semiconductor chips 914 with film-shaped adhesives having the semiconductor chip 9 and the cut film-shaped adhesive 140 provided on its back surface 9b can be obtained. These semiconductor chips 914 with film-shaped adhesives are in a state of being neatly arranged and fixed on the intermediate layer 13 in the laminated sheet 10, and constitute a semiconductor chip group 910 with film-shaped adhesives.

[0453] The back surface 9b of the semiconductor chip 9 corresponds to the back surface 9b' of the semiconductor wafer 9'. In addition, in FIG. 3, the reference numeral 9a represents the circuit formation surface of the semiconductor chip 9, which corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

[0454] When performing blade cutting, it is preferable that: the blade is cut into the entire region in the thickness direction of the semiconductor wafer 9' to divide it, and at the same time, the blade is cut into the intermediate region of the intermediate layer 13 of the semiconductor device manufacturing sheet 101 from the first surface 14a of the film-shaped adhesive 14, thereby cutting the film-shaped adhesive 14 in its entire thickness region and not cutting into the adhesive layer 12.

[0455] That is, when performing blade cutting, it is preferable that: the blade is cut into at least the first surface 13a of the intermediate layer 13 along the lamination direction of the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' from the circuit formation surface 9a' of the semiconductor wafer 9', and does not cut into the surface of the intermediate layer 13 on the side opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

[0456] In this process, by the above method, it is easy to avoid the blade reaching the substrate 11, thereby being able to suppress the generation of cutting chips from the substrate 11. And by making the main component of the intermediate layer 13 cut by the blade a non-silicon resin with a weight average molecular weight of 100,000 or less, especially by making this weight average molecular weight 100,000 or less, it is also possible to suppress the generation of cutting chips from the intermediate layer 13.

[0457] The conditions for blade cutting can be appropriately adjusted according to the purpose, and there is no particular limitation. Generally, the rotation speed of the blade is preferably 15,000 to 50,000 rpm, and the moving speed of the blade is preferably 5 to 75 mm / second.

[0458] As Figure 3C shown, after blade cutting, the semiconductor chip 914 with a film-like adhesive is pulled away from the intermediate layer 13 in the laminated sheet 10 for picking up. Here, a pulling tool 7 such as a vacuum collet is shown, and the semiconductor chip 914 with a film-like adhesive is pulled away in the direction of arrow P. In addition, the pulling tool 7 is not shown in cross-section here.

[0459] The semiconductor chip 914 with a film-like adhesive can be picked up by a known method.

[0460] When the proportion of the silicon concentration in the first surface 13a of the intermediate layer 13 is 1 to 20%, it is easier to pick up the semiconductor chip 914 with a film-like adhesive.

[0461] When the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer, it is easier to pick up the semiconductor chip 914 with a film-like adhesive.

[0462] As a preferred embodiment of the method for manufacturing the semiconductor chip with a film-like adhesive described above, for example, there can be cited:

[0463] A method for manufacturing a semiconductor chip with a film-like adhesive, which is a method for manufacturing a semiconductor chip with a film-like adhesive having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. In this manufacturing method,

[0464] The sheet for manufacturing a semiconductor device includes the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0465] The manufacturing method has: a step of attaching a film-like adhesive to the back surface of the semiconductor wafer while heating the semiconductor device manufacturing sheet; a step of dividing the semiconductor wafer with the film-like adhesive attached thereto by cutting through the entire region in the thickness direction from the circuit formation surface side thereof to produce semiconductor chips, and at the same time cutting the semiconductor device manufacturing sheet in the thickness direction from the film-like adhesive side thereof to a midway region of the intermediate layer, cutting the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with a plurality of semiconductor chips with the film-like adhesive neatly arranged on the intermediate layer; and a step of picking up the semiconductor chips with the film-like adhesive by pulling them away from the intermediate layer.

[0466] (Second Embodiment (Manufacturing Method 2): Method Related to Stealth Dicing)

[0467] The manufacturing method of the semiconductor chip with a film-like adhesive according to the present embodiment includes: a step of attaching the back surface of a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged to the exposed surface of the film-like adhesive of the semiconductor device manufacturing sheet, thereby obtaining a laminate in which the base material, the adhesive layer, the intermediate layer, the film-like adhesive, and the semiconductor chip group are laminated in this order;

[0468] a step of cutting the film-like adhesive to obtain semiconductor chips with a film-like adhesive; and

[0469] a step of picking up the semiconductor chips with a film-like adhesive by pulling them away from the base material, the adhesive layer, and the intermediate layer.

[0470] FIG. 4 is a cross-sectional view schematically showing an example of a manufacturing method of a semiconductor chip that is an object of use of a semiconductor device manufacturing sheet, which shows a case of manufacturing a semiconductor chip by cutting accompanied by the formation of a modified layer in a semiconductor wafer.

[0471] FIG. 5 is a cross-sectional view schematically showing another example of a usage method of a semiconductor device manufacturing sheet, which shows a case of using the semiconductor device manufacturing sheet after attaching it to a semiconductor chip. In this method, the semiconductor device manufacturing sheet is used as a dicing tape. Here, taking Figure 1 the shown semiconductor device manufacturing sheet 101 as an example, its usage method will be described.

[0472] First, before using the semiconductor device manufacturing sheet 101, as Figure 4AAs shown, a semiconductor wafer 9' is prepared, and a back grinding tape (sometimes also referred to as a surface protection tape) 8 is attached to its circuit formation surface 9a'.

[0473] In FIG. 4, reference numeral W 9’ represents the width of the semiconductor wafer 9'.

[0474] Next, as Figure 4B shown, by irradiating a laser (not shown) in such a manner that the laser is focused on a focal point set inside the semiconductor wafer 9', a modified layer 90' is formed inside the semiconductor wafer 9'.

[0475] Preferably, the semiconductor wafer 9' is irradiated with the laser from the back surface 9b' side of the semiconductor wafer 9'.

[0476] The position of the focal point at this time is the position of a predetermined division (cut) of the semiconductor wafer 9', and this position is set in such a way that semiconductor chips of a target size, shape, and number can be obtained from the semiconductor wafer 9'.

[0477] Next, the back surface 9b' of the semiconductor wafer 9' is ground using a grinding machine (not shown). Thereby, the thickness of the semiconductor wafer 9' is adjusted to a target value, and at the same time, by using the force applied during grinding to the semiconductor wafer 9' at this time, the semiconductor wafer 9' is divided at the portion where the modified layer 90' is formed. As Figure 4C shown, a plurality of semiconductor chips 9 are manufactured.

[0478] Different from other parts of the semiconductor wafer 9', the modified layer 90' of the semiconductor wafer 9' is modified by laser irradiation, and its strength becomes weak. Therefore, by applying a force to the semiconductor wafer 9' on which the modified layer 90' is formed, a force is applied to the modified layer 90', and the semiconductor wafer 9' cracks at the portion of the modified layer 90', and a plurality of semiconductor chips 9 can be obtained.

[0479] In the above-described manner, semiconductor chips 9 that are the objects to be used for the semiconductor device manufacturing sheet 101 can be obtained. More specifically, through this process, a semiconductor chip group 901 in a state where a plurality of semiconductor chips 9 are neatly arranged and fixed to the back grinding tape 8 can be obtained.

[0480] When looking down on the semiconductor chip group 901 from above the semiconductor chip group 901, the planar shape formed by connecting the outermost portions of the semiconductor chip group 901 (in this specification, sometimes this planar shape is simply referred to as "the planar shape of the semiconductor chip group") is exactly the same as the planar shape of the semiconductor wafer 9' when looking down on the semiconductor wafer 9' in the same manner, or the difference between the two planar shapes is so slight as to be negligible. It can be said that the planar shape of the semiconductor chip group 901 is substantially the same as the planar shape of the semiconductor wafer 9'.

[0481] Therefore, as Figure 4C shown, the width of the planar shape of the semiconductor chip group 901 can be regarded as being the same as the width W of the semiconductor wafer 9'. 9’ Moreover, the maximum value of the width of the planar shape of the semiconductor chip group 901 can be regarded as being the same as the maximum value of the width W 9’ of the semiconductor wafer 9'.

[0482] In addition, although the case where the semiconductor chip 9 can be made from the semiconductor wafer 9' to meet the target is shown here, depending on the conditions during the back grinding of the back surface 9b' of the semiconductor wafer 9', a part of the area of the semiconductor wafer 9' may sometimes not be divided into the semiconductor chips 9.

[0483] Next, using the obtained semiconductor chips 9 (semiconductor chip group 901) above, a semiconductor chip with a film-like adhesive is manufactured.

[0484] First, as Figure 5A shown, while heating a semiconductor device manufacturing sheet 101 in a state where the release film 15 has been removed, the film-like adhesive 14 therein is attached to the back surfaces 9b of all the semiconductor chips 9 in the semiconductor chip group 901. At this time, the attachment target of the film-like adhesive 14 can also be an incompletely divided semiconductor wafer.

[0485] The maximum value of the width W 13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum value of the width W 14 of the film-like adhesive 14 are both exactly the same as the maximum value of the width W 9’ of the semiconductor wafer 9' (in other words, the width of the semiconductor chip group 901), or although different, the error is slight and almost equivalent.

[0486] For the attachment of the film-like adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor chip group 901 at this time, except for using the semiconductor chip group 901 instead of the semiconductor wafer 9', it can be implemented by the same method as the attachment of the film-like adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1.

[0487] Next, the back grinding tape 8 is removed from the fixed semiconductor chip group 901. Then, as Figure 5B shown, while cooling the semiconductor device manufacturing sheet 101, it is stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12), thereby performing expansion. Here, the direction of the expansion of the semiconductor device manufacturing sheet 101 is indicated by the arrow E1. By expanding in this way, the film-like adhesive 14 can be cut along the outer periphery of the semiconductor chip 9.

[0488] Through this process, a plurality of semiconductor chips 9 with the film-shaped adhesive 140 cut and provided on the back surface 9b thereof are obtained. These semiconductor chips 914 with the film-shaped adhesive are in a state of being neatly arranged and fixed on the intermediate layer 13 in the laminated sheet 10, and constitute a semiconductor chip group 910 with the film-shaped adhesive.

[0489] The semiconductor chips 914 with the film-shaped adhesive and the semiconductor chip group 910 with the film-shaped adhesive obtained here are basically the same as the semiconductor chips 914 with the film-shaped adhesive and the semiconductor chip group 910 with the film-shaped adhesive obtained in the manufacturing method 1 described above.

[0490] In the case where a part of the semiconductor wafer 9' is not divided into semiconductor chips 9 when dividing the semiconductor wafer 9' as described above, by performing this process, this region can be divided into semiconductor chips.

[0491] Preferably, the temperature of the semiconductor device manufacturing sheet 101 is set to -5 to 5 °C and expansion is performed. By cooling and expanding the semiconductor device manufacturing sheet 101 in the above-described manner (performing cold expansion), it is possible to more easily cut the film-shaped adhesive 14 with high precision.

[0492] The expansion of the semiconductor device manufacturing sheet 101 can be performed by a known method. For example, after fixing the region near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-shaped adhesive 14 are not laminated (the non-laminated region) to a jig such as an annular frame (not shown), the entire region of the semiconductor device manufacturing sheet 101 laminated with the intermediate layer 13 and the film-shaped adhesive 14 is pushed upward from the substrate 11 side in the direction from the substrate 11 to the adhesive layer 12 to expand the semiconductor device manufacturing sheet 101.

[0493] Figure 5B In, although the non-laminated region where the intermediate layer 13 and the film-shaped adhesive 14 are not laminated on the first surface 12a of the adhesive layer 12 is almost parallel to the first surface 13a of the intermediate layer 13, as described above, in the state where expansion is performed by pushing up the semiconductor device manufacturing sheet 101, the non-laminated region includes an inclined surface, and the height of the inclined surface gradually decreases as it approaches the outer periphery of the adhesive layer 12 in the direction opposite to the above-described upward push direction.

[0494] In this process, by providing the semiconductor device manufacturing sheet 101 with the intermediate layer 13 (in other words, by providing the film-shaped adhesive 14 before cutting on the intermediate layer 13), the film-shaped adhesive 14 can be cut with good precision at the target position (in other words, along the outer periphery of the semiconductor chip 9), and cutting defects can be suppressed.

[0495] As Figure 5C shown, after expansion, the semiconductor chip 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminate 10 for picking up.

[0496] At this time, the picking can be carried out by the same method as the picking in the manufacturing method 1 described above, and the picking suitability is also the same as that in the manufacturing method 1.

[0497] For example, in this process, when the proportion of the silicon concentration in the first surface 13a of the intermediate layer 13 is 1 to 20%, it is easier to pick up the semiconductor chip 914 with the film-like adhesive.

[0498] In addition, when the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer, it is easier to pick up the semiconductor chip 914 with the film-like adhesive.

[0499] As a preferred embodiment of the manufacturing method of the semiconductor chip with the film-like adhesive described above, for example, there can be cited:

[0500] A manufacturing method of a semiconductor chip with a film-like adhesive, which is a manufacturing method of a semiconductor chip with a film-like adhesive having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. In this manufacturing method,

[0501] The semiconductor device manufacturing sheet includes the base material, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0502] The manufacturing method has the following steps: a step of forming a modified layer inside the semiconductor wafer by irradiating a laser in a manner focused on a focal point set inside the semiconductor wafer; a step of grinding the back surface of the semiconductor wafer after forming the modified layer, and simultaneously dividing the semiconductor wafer at the portion where the modified layer is formed by using the force applied during the grinding of the semiconductor wafer, to obtain a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; a step of attaching a film-like adhesive to the back surfaces of all the semiconductor chips in the semiconductor chip group while heating the semiconductor device manufacturing sheet; a step of cutting the film-like adhesive along the outer periphery of the semiconductor chip by stretching the semiconductor device manufacturing sheet attached to the semiconductor chip group in a direction parallel to its surface while cooling it, to obtain a film-like adhesive-attached semiconductor chip group in which a plurality of film-like adhesive-attached semiconductor chips are neatly arranged on the intermediate layer; and a step of picking up the film-like adhesive-attached semiconductor chips by pulling them away from the intermediate layer.

[0503] (Third Embodiment (Manufacturing Method 3): A method related to laser cutting after DBG)

[0504] The manufacturing method of the film-like adhesive-attached semiconductor chip in this embodiment is a manufacturing method of a film-like adhesive-attached semiconductor chip having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.

[0505] In the manufacturing method, a semiconductor device manufacturing sheet is used. The semiconductor device manufacturing sheet includes a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate. The intermediate layer contains a non-silicon resin having a weight average molecular weight of 100,000 or less as a main component.

[0506] The manufacturing method includes: a step of producing a laminate of the semiconductor device manufacturing sheet and the semiconductor chip by bonding the film-like adhesive of the semiconductor device manufacturing sheet to the back surface of the semiconductor chip; and

[0507] a step of irradiating the laminate with a laser from the side where the semiconductor chip is laminated in the laminate, and cutting the film-like adhesive in a manner that does not cut into the adhesive layer, to obtain a film-like adhesive-attached semiconductor chip.

[0508] Hereinafter, an example of the manufacturing method of this embodiment will be described.

[0509] FIG. 6 is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip that is an object of use of a wafer for manufacturing a semiconductor device, and shows a case where a semiconductor chip is manufactured by applying a pre-cutting method using a blade to a semiconductor wafer.

[0510] FIG. 7 is a cross-sectional view schematically illustrating another example of a method for using a wafer for manufacturing a semiconductor device, and shows a case where the wafer for manufacturing a semiconductor device is attached to a semiconductor chip and then used. In this method, the wafer for manufacturing a semiconductor device is used as a dicing wafer. Here, taking the wafer for manufacturing a semiconductor device 101 shown in Figure 1 as an example, its usage method will be described.

[0511] In addition, for parts having the same configuration as the above manufacturing method 1 or manufacturing method 2, detailed descriptions are omitted.

[0512] First, before using the wafer for manufacturing a semiconductor device 101, a semiconductor wafer 9' is prepared. Then, as shown in Figure 6A , a blade is cut into the semiconductor wafer 9' from the circuit formation surface 9a' side of the semiconductor wafer 9', and a grooved trench with a bottom is formed on the surface of the semiconductor wafer 9'.

[0513] Next, as shown in Figure 6B , a back grinding tape (sometimes also referred to as a "surface protection tape") 8 is attached to its circuit formation surface 9a'.

[0514] Next, the back surface 9b' of the semiconductor wafer 9' is ground using a grinder (not shown). Thus, by grinding the back surface 9b' so as to adjust the thickness of the semiconductor wafer 9' to a target value and reach the trench, the semiconductor wafer 9' is divided to produce the semiconductor chip 9 shown in Figure 6C .

[0515] Through this process, a semiconductor chip group 902 in which the semiconductor chips 9 are singulated by DBG (pre-cutting and then grinding) and a plurality of semiconductor chips 9 are neatly arranged and fixed on the back grinding tape 8 can be obtained.

[0516] As an example, as singulation using DBG, the following processes can be included: a process of cutting a blade into a semiconductor wafer from the circuit formation surface side of the semiconductor wafer to form a grooved trench with a bottom on the surface of the semiconductor wafer; and a process of grinding the back surface of the semiconductor wafer to divide the semiconductor wafer and produce a plurality of semiconductor chips.

[0517] Next, using the obtained semiconductor chip 9 (semiconductor chip group 902) above, a semiconductor chip with a film-like adhesive is manufactured.

[0518] First, as shown in Figure 7AAs shown, while heating a semiconductor device manufacturing sheet 101 in a state where the release film 15 has been removed, the film-like adhesive 14 is attached to the back surfaces 9b of all the semiconductor chips 9 in the semiconductor chip group 901, thereby producing a laminate of the semiconductor device manufacturing sheet 101 and the semiconductor chip group 902.

[0519] Next, the back grinding tape 8 is removed from the fixed semiconductor chip group 902. Then, as Figure 7B shown, through the grooves formed between the respective chips 9, for the laminate, laser light is irradiated onto the film-like adhesive 14 from the side of the laminate where the semiconductor chip group 902 is laminated, thereby cutting the film-like adhesive 14 along the outer periphery of the semiconductor chips 9. At this time, the film-like adhesive 14 is cut in such a manner as not to cut into the adhesive layer 12.

[0520] The laser is light with a consistent wavelength and phase. For example, any wavelength within the range of 320 to 600 nm can be exemplified. It is known that solid lasers such as YAG (basic wavelength = 1064 nm), or ruby (basic wavelength = 694 nm), or gas lasers such as argon ion lasers (basic wavelength = 1930 nm) and the higher harmonics of these lasers can be used. Various lasers can be used. As the types of lasers, pulsed laser Nd-YAG lasers, Nd-YVO lasers, Nd-YLF lasers, and lasers that cause multi-photon absorption such as titanium sapphire lasers can be listed. As a short-wavelength laser with a relatively high energy density, the third harmonic of the Nd-YAG laser (wavelength = 355 nm) is also preferably used.

[0521] These specific wavelengths are the laser wavelengths mounted on existing laser cutting machines, but in this embodiment, lasers with any wavelength that can be used for cutting the film-like adhesive can be used.

[0522] The intensity and illuminance of the laser can be appropriately determined according to the type and thickness of the film-like firing material to be cut.

[0523] Since the semiconductor device manufacturing sheet 101 has the intermediate layer 13, it is easy to cut the film-like adhesive 14 in the entire region in its thickness direction in such a manner as not to cut into the adhesive layer 12. At this time, it is possible to cut into the intermediate region of the intermediate layer 13. Thereby, it is possible to easily prevent the laser from reaching the base material and the adhesive layer, and it is possible to suppress the generation of debris from the base material and the adhesive layer.

[0524] Moreover, by making the main component of the intermediate layer 13 cut by the laser a non-silicon resin having a weight average molecular weight of 100,000 or less, especially by making the weight average molecular weight 100,000 or less, it is also possible to suppress the generation of debris from the intermediate layer 13.

[0525] The manufacturing method of the semiconductor chip with a film-like adhesive according to this embodiment may further include a process of picking up the semiconductor chip with the film-like adhesive by pulling it away from the intermediate layer after the process of obtaining the semiconductor chip with the film-like adhesive.

[0526] For example, as Figure 7C shown, it is possible to pick up the semiconductor chip 914 with the film-like adhesive by pulling it away from the intermediate layer 13 in the laminated sheet 10.

[0527] The picking-up at this time can be carried out by the same method as the picking-up in Manufacturing Method 1 described above, and the picking-up suitability is also as good as that in Manufacturing Method 1.

[0528] As a preferred embodiment of the manufacturing method of the semiconductor chip with the film-like adhesive described above, for example, it can be cited:

[0529] A manufacturing method of a semiconductor chip with a film-like adhesive, which is a manufacturing method of a semiconductor chip with a film-like adhesive having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. In this manufacturing method,

[0530] the semiconductor device manufacturing sheet includes the base material, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0531] The manufacturing method includes: a process of cutting a blade into the semiconductor wafer from the circuit formation surface side of the semiconductor wafer to form a bottomed groove on the surface of the semiconductor wafer; a process of grinding the back surface of the semiconductor wafer after forming the groove to divide the semiconductor wafer and obtain a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; a process of bonding the film-like adhesive of the semiconductor device manufacturing sheet to the semiconductor chip; a process of cutting the film-like adhesive along the outer periphery of the semiconductor chip by laser irradiation from the film-like adhesive side without cutting into the adhesive layer to obtain a semiconductor chip group with a plurality of semiconductor chips with the film-like adhesive neatly arranged on the intermediate layer; and a process of picking up the semiconductor chip with the film-like adhesive by pulling it away from the intermediate layer.

[0532] So far, any one of Manufacturing Method 1, Manufacturing Method 2, and Manufacturing Method 3 is based on Figure 1Taking the sheet 101 for manufacturing a semiconductor device shown as an example, its usage has been described. However, the sheets for manufacturing a semiconductor device of the present embodiment other than this can also be used in the same manner. At this time, other processes may be appropriately added as needed based on the differences in the configurations between the sheet for manufacturing a semiconductor device and the sheet 101 for manufacturing a semiconductor device, so as to use the sheet for manufacturing a semiconductor device.

[0533] Not limited to the cases of manufacturing method 1 and manufacturing method 2, after obtaining the semiconductor chip group with the film-shaped adhesive, before picking up the semiconductor chip with the film-shaped adhesive, the laminated sheet can be expanded in a direction parallel to the surface (the first surface) on the intermediate layer side of the adhesive layer, and while maintaining this state, the peripheral portion of the laminated sheet where the semiconductor chip with the film-shaped adhesive (the semiconductor chip group with the film-shaped adhesive) is not placed is further heated.

[0534] Thereby, the peripheral portion can be shrunk, and at the same time, the distance between adjacent semiconductor chips in the laminated sheet, that is, the notch width, can be made wide enough and maintained with high uniformity. Furthermore, it becomes easier to pick up the semiconductor chip with the film-shaped adhesive.

[0535] Examples

[0536] Hereinafter, the present invention will be described in more detail with specific examples. However, the present invention is not limited by any of the examples shown below.

[0537] <<Raw materials for preparing the adhesive composition>>

[0538] The raw materials for preparing the adhesive composition are shown below.

[0539] [Polymer component (a)]

[0540] (a)-1: An acrylic resin (weight average molecular weight: 800,000, glass transition temperature: 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[0541] [Epoxy resin (b1)]

[0542] (b1)-1: Cresol novolak type epoxy resin with acryloyl groups added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 518 g / eq, number average molecular weight: 2100, unsaturated group content equal to epoxy group)

[0543] [Thermal curing agent (b2)]

[0544] (b2)-1: Arylalkyl-type phenolic resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, Inc., number-average molecular weight of 1100, softening point of 63 °C)

[0545] [Filler (d)]

[0546] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatech Co., average particle diameter of 50 nm, product treated with methacryloylsilane)

[0547] [Coupling agent (e)]

[0548] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicone Co., Ltd.)

[0549] [Crosslinking agent (f)]

[0550] (f)-1: Toluene diisocyanate-based crosslinking agent ("CORONATE L" manufactured by TOSOH CORPORATION)

[0551] [Reference Example 1]

[0552] [Manufacture of a sheet for semiconductor device manufacturing]

[0553] [Manufacture of the substrate]

[0554] Using an extruder, low-density polyethylene (LDPE, "SUMIKATHENE L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted, the melt was extruded using a T-die method, and the extruded material was biaxially stretched using a cooling roll to obtain a substrate made of LDPE (thickness: 110 μm).

[0555] [Production of the adhesive layer]

[0556] A non-energy-ray-curable adhesive composition containing an acrylic resin ("ORIBAIN BPS 6367X" manufactured by TOYOCHEM CO., LTD.) (100 parts by mass) as the adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by TOYOCHEM CO., LTD.) (1 part by mass) was prepared.

[0557] Next, using a release film whose one surface of a polyethylene terephthalate film had been release-treated by silicone treatment, the above-obtained adhesive composition was coated on the release-treated surface of the release film and heated and dried at 100 °C for 2 minutes to produce a non-energy-ray-curable adhesive layer (thickness: 10 μm).

[0558] <Fabrication of the intermediate layer>

[0559] At room temperature, 15 g of ethylene vinyl acetate copolymer (EVA, weight average molecular weight of 30,000, content of structural units derived from vinyl acetate being 25% by mass) was dissolved in 85 g of tetrahydrofuran. To the resulting solution, 1.5 g of a siloxane compound (polydimethylsiloxane, “BYK-333” manufactured by BYK Japan KK., the number of structural units represented by the chemical formula “-Si(-CH3)2-O-” in one molecule being 45 to 230) was added and stirred to prepare a composition for forming an intermediate layer.

[0560] Using a release film whose one side of a polyethylene terephthalate film has been subjected to a release treatment by silicone treatment, the above-obtained composition for forming an intermediate layer was coated on the release-treated surface of the release film and heated and dried at 70 °C for 5 minutes to fabricate an intermediate layer (thickness: 20 μm).

[0561] <Preparation of the film-like adhesive>

[0562] A thermosetting adhesive composition containing 100 parts by mass of polymer component (a)-1, 10 parts by mass of epoxy resin (b1)-1, 1.5 parts by mass of heat curing agent (b2)-1, 75 parts by mass of filler (d)-1, 0.5 parts by mass of coupling agent (e)-1, and 0.5 parts by mass of crosslinking agent (f)-1 was prepared.

[0563] Subsequently, using a release film whose one side of a polyethylene terephthalate film has been subjected to a release treatment by silicone treatment, the above-obtained adhesive composition was coated on the release-treated surface of the release film and heated and dried at 80 °C for 2 minutes to fabricate a thermosetting film-like adhesive (thickness: 7 μm).

[0564] <Fabrication of the sheet for manufacturing semiconductor devices>

[0565] The exposed surface of the obtained adhesive layer on the side opposite to the side with the release film was bonded to one surface of the obtained substrate to fabricate a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0566] The exposed surface of the obtained film-like adhesive on the side opposite to the side with the release film was bonded to the exposed surface of the obtained intermediate layer on the side opposite to the side with the release film to fabricate a second intermediate laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive, and a release film).

[0567] Next, for the second intermediate laminate with the release film, punching is performed from the release film on the intermediate layer side to the film adhesive using a cutting blade to remove unnecessary portions, thereby producing a processed product of a second intermediate laminate with a release film, in which a film adhesive (thickness: 7 μm) having a circular planar shape (diameter: 305 mm) on the upper surface of the release film on the film adhesive side, an intermediate layer (thickness: 20 μm), and the release film are laminated in this order along their thickness directions.

[0568] Next, the release film is removed from the first intermediate laminate with the release film obtained above to expose the surface of the adhesive layer.

[0569] Furthermore, the circular release film is removed from the processed product of the second intermediate laminate with the release film obtained above to expose the surface of the intermediate layer.

[0570] Next, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the processed product of the second intermediate laminate. For the base material and the adhesive layer (i.e., the support sheet) in the laminate thus obtained, punching is performed from the base material side using a cutting blade (diameter: 370 mm) in such a manner that their (support sheet) planar shape is circular (diameter: 370 mm) and the circular film adhesive and intermediate layer (diameter: 305 mm) are concentric, and unnecessary portions are removed.

[0571] Thus, a sheet for manufacturing a semiconductor device with a release film is obtained, in which a base material (thickness: 110 μm), an adhesive layer (thickness: 10 μm), an intermediate layer (thickness: 20 μm), a film adhesive (thickness: 7 μm), and a release film are laminated in this order along their thickness directions.

[0572] <<Evaluation (1) of the Sheet for Manufacturing a Semiconductor Device>>

[0573] <Calculation of the Ratio of the Silicon Concentration on the Surface of the Intermediate Layer on the Film Adhesive Side>

[0574] During the manufacturing process of the sheet for manufacturing a semiconductor device described above, for the exposed surface of the intermediate layer at the stage before bonding to the adhesive layer, XPS analysis is performed to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N), and silicon (Si), and the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon is calculated based on the measured values.

[0575] XPS analysis is performed using an X-ray photoelectron spectroscopy analyzer ("Quantra SXM" manufactured by ULVAC, Inc.), with an irradiation angle of 45° and an X-ray beam diameter of Implementation under the condition that the output is 4.5 W. The results are shown in the column of "Ratio of Element Concentrations in the Intermediate Layer (%)" in Tables 1 to 2 together with the ratios (%) of the concentrations of other elements.

[0576] <Evaluation of the Effect of Suppressing Chip Generation during Blade Cutting>

[0577] [Manufacture of Silicon Chip Sets with Film - like Adhesives]

[0578] Remove the release film from the semiconductor device - manufacturing wafer obtained above.

[0579] Use a silicon wafer (diameter: 300 mm, thickness: 75 μm) that has been polished on the back surface by dry polishing. Using a tape laminator ("Adwill RAD2500" manufactured by Lintec Corporation), heat the above - mentioned semiconductor device - manufacturing wafer to 60 °C and attach it to the back surface (polished surface) of the silicon wafer through its film - like adhesive. Thus, a laminate is obtained in which a substrate, an adhesive layer, an intermediate layer, a film - like adhesive, and a silicon wafer are laminated in this order along their thickness directions (a laminate in which the laminate wafer, the film - like adhesive, and the silicon wafer are laminated in this order along their thickness directions).

[0580] Next, fix the region near the periphery of the first surface of the adhesive layer in the laminate where the intermediate layer is not provided (the non - laminated region) to a wafer - cutting annular frame.

[0581] Next, use a cutting device ("DFD6361" manufactured by DISCO Corporation) to perform cutting. Thus, the silicon wafer is divided, and at the same time, the film - like adhesive is also cut, obtaining silicon chips of size 8 mm

[0582] × 8 mm. The cutting at this time is performed as follows: Set the rotational speed of the blade to 30000 rpm and the moving speed of the blade to 30 mm / second. For the semiconductor device - manufacturing wafer, cut the blade into the middle region of the intermediate layer from the film - like adhesive - attached surface of the silicon wafer (that is, the entire region in the thickness direction of the film - like adhesive and the region of the intermediate layer from its film - like adhesive - side surface to the middle). As the blade, use "Z05 - SD2000 - D1 - 90 CC" manufactured by DISCO Corporation.

[0583] Thus, a silicon chip set with film - like adhesives is obtained, in which a plurality of silicon chips with film - like adhesives having silicon chips and the cut - off film - like adhesives provided on their back surfaces are neatly arranged and fixed to the intermediate layer in the laminate through the film - like adhesives therein.

[0584] [Evaluation of the Effect of Suppressing Chip Generation]

[0585] Using a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION), the silicon chip side of the silicon chip group with the film-like adhesive obtained above was observed from above to confirm whether cutting chips were generated. Moreover, the case where no cutting chips were generated at all was judged as "A", and the case where cutting chips were generated even in a small amount was judged as "B". The results are shown in Table 1.

[0586] <Evaluation of the cuttability of the film-like adhesive during expansion>

[0587] [Manufacture of silicon chip group with film-like adhesive]

[0588] A silicon wafer having a circular planar shape with a diameter of 300 mm and a thickness of 775 μm was used, and a back grinding tape ("Adwill E-3100TN" manufactured by LINTEC Corporation) was attached to one surface of the silicon wafer.

[0589] Next, a laser irradiation device ("DFL73161" manufactured by DISCO Corporation) was used to irradiate the laser in such a manner that the laser was focused on a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point was set in such a way that a plurality of silicon chips each having a size of 8 mm

[0590] ×8 mm could be obtained from the silicon wafer. In addition, the laser was irradiated to the silicon wafer from the other surface (the surface to which the back grinding tape was not attached) side of the silicon wafer.

[0591] Next, the other surface of the silicon wafer was ground using a grinding machine, whereby the thickness of the silicon wafer was made 30 μm, and at the same time, the silicon wafer was divided at the site where the modified layer was formed by the force applied during the grinding of the silicon wafer at this time, thereby forming a plurality of silicon chips. Thus, a silicon chip group in a state where a plurality of silicon chips were neatly arranged and fixed to the back grinding tape was obtained.

[0592] Next, using a tape laminator ("Adwill RAD2500" manufactured by LINTEC Corporation), while heating one semiconductor device manufacturing sheet obtained above to 60°C, the film-like adhesive was attached to the other surface (in other words, the ground surface) of all the silicon chips (silicon chip group).

[0593] Next, the region near the periphery of the first surface of the adhesive layer in the semiconductor device manufacturing sheet attached to the silicon chip group where the intermediate layer was not provided (the non-laminated region) was fixed to a wafer cutting ring frame.

[0594] Next, the back grinding tape is removed from the silicon chip group in the fixed state. Then, using a fully automatic chip dicing machine ("DDS2300" manufactured by DISCO Corporation), while cooling the semiconductor device manufacturing wafer at 0°C, it is expanded in a direction parallel to its surface, thereby cutting the film-like adhesive along the outer periphery of the silicon chip. At this time, the peripheral portion of the semiconductor device manufacturing wafer is fixed, and the entire region where the intermediate layer and the film-like adhesive are laminated on the semiconductor device manufacturing wafer is only pushed up by a height of 15 mm from the substrate side of the semiconductor device manufacturing wafer, thereby performing the expansion.

[0595] Thereby, a silicon chip group with film-like adhesive is obtained, in which a plurality of silicon chips with film-like adhesive, each having a silicon chip and a cut film-like adhesive provided on the other surface (grinding surface) of the silicon chip, are neatly arranged and fixed on the intermediate layer.

[0596] Next, after temporarily releasing the expansion of the above-mentioned semiconductor device manufacturing wafer, at room temperature, a laminate (i.e., the laminated sheet) formed by laminating a substrate, an adhesive layer, and an intermediate layer is expanded in a direction parallel to the first surface of the adhesive layer. Further, while maintaining the expanded state, the peripheral portion of the laminated sheet where the silicon chips with film-like adhesive are not placed is heated. Thereby, the peripheral portion is shrunk, and at the same time, the cut width between adjacent silicon chips in the laminated sheet is maintained at a value equal to or greater than a certain value.

[0597] [Evaluation of the cutability of the film-like adhesive]

[0598] When manufacturing the above-mentioned silicon chip group with film-like adhesive, a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION) is used to observe it from above the silicon chip side of the obtained silicon chip group with film-like adhesive. Then, it is confirmed the number of cut lines of the film-like adhesive that should be formed but are actually not formed, and the number of cut lines of the film-like adhesive that are formed incompletely, among the multiple cut lines of the film-like adhesive extending in one direction and the multiple cut lines of the film-like adhesive extending in a direction orthogonal to this direction, assuming that the film-like adhesive is normally cut by the expansion of the semiconductor device manufacturing wafer, and the cutability of the film-like adhesive is evaluated according to the following evaluation criteria.

[0599] The results are shown in Table 1.

[0600] (Evaluation criteria)

[0601] A: The total number of cut lines of the film-like adhesive that are actually not formed and the cut lines of the film-like adhesive that are formed incompletely is 5 or less.

[0602] B: The total number of cutting lines of the film-like adhesive that is actually not formed and the cutting lines of the incompletely formed film-like adhesive is 6 or more.

[0603] <Evaluation of the pick-up property of the silicon chip with the film-like adhesive>

[0604] After evaluating the cuttability of the film-like adhesive as described above, next, using a silicon chip group with a film-like adhesive and a die bonder ("PU100" manufactured by FASFORD TECHNOLOGY CO., LTD.), under the conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms, pick up the silicon chip with the film-like adhesive from the intermediate layer in the laminated sheet. And, the case where all the silicon chips with the film-like adhesive can be picked up normally is evaluated as "A", and the case where one or more silicon chips with the film-like adhesive cannot be picked up normally is evaluated as "B". The results are shown in Table 1.

[0605] <Measurement of the T-peel strength between the intermediate layer and the film-like adhesive>

[0606] Remove the release film on the semiconductor device manufacturing sheet obtained above.

[0607] Bond the entire exposed surface of the film-like adhesive in the resulting semiconductor device manufacturing sheet to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A)PL Shin 8LK" manufactured by Lintec Corporation), and cut the resulting laminate into a size of 50 mm × 100 mm to produce a test piece.

[0608] For this test piece, in accordance with JIS K6854-3, separate the laminate of the substrate, the adhesive layer, and the intermediate layer (i.e., the laminated sheet) from the laminate of the film-like adhesive and the adhesive tape, and peel the test piece in a T-shape. Take the maximum value of the peel force (mN / 50 mm) measured at this time as the T-peel strength. At this time, the measurement is carried out under the conditions of a peel speed of 50 mm / minute, 23 °C, and a humidity of 50% RH. The results are shown in Table 1.

[0609] <<Follow-up of the manufacturing and evaluation (1) of the semiconductor device manufacturing sheet>>

[0610] [Reference Example 2]

[0611] Except for increasing the coating amount of the intermediate layer-forming composition and making the thickness of the intermediate layer 80 μm instead of 20 μm, a semiconductor device manufacturing sheet was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1.

[0612] [Reference Example 3]

[0613] Except that when preparing the composition for forming the intermediate layer, the siloxane compound is not added and the amount of the ethylene-vinyl acetate copolymer is set to 16.5 g instead of 15 g (in other words, the ethylene-vinyl acetate copolymer of the same mass is used to replace the siloxane compound, so that only the ethylene-vinyl acetate copolymer is dissolved in tetrahydrofuran), a wafer for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1. The notation "-" in the additive column in Table 1 means that the additive was not used.

[0614] [Comparative Example 1]

[0615] Except that when preparing the composition for forming the intermediate layer, the ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight of 200,000, content of structural units derived from vinyl acetate being 25% by mass) of the same mass was used to replace the ethylene-vinyl acetate copolymer, and the coating amount of the composition for forming the intermediate layer was increased so that the thickness of the intermediate layer was made 80 μm instead of 20 μm, a wafer for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1.

[0616] [Comparative Example 2]

[0617] Except that when preparing the composition for forming the intermediate layer, the ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight of 200,000, content of structural units derived from vinyl acetate being 25% by mass) of the same mass was used to replace the ethylene-vinyl acetate copolymer, a wafer for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1.

[0618] [Comparative Example 3]

[0619] Except that the intermediate layer was not provided, a wafer for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1.

[0620] [Table 1]

[0621]

[0622] From the above results, it can be seen that for Reference Examples 1 to 3, when blade cutting is performed, the generation of cutting chips is suppressed, and when expansion is performed, the cutting failure of the film-like adhesive is suppressed, and the dicing suitability of the semiconductor wafer is excellent.

[0623] For Reference Examples 1 to 3, the weight-average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer in the semiconductor device manufacturing sheet is 30,000.

[0624] In addition, it is considered that the reason for the poor cuttability in Comparative Example 2 is that the above-mentioned weight-average molecular weight is large and the peel strength is large (it is considered that if the peel strength is large, the film adhesive will follow the intermediate layer). Regarding this point, it is speculated that although the peel force is high in Examples 1 and 3, the cuttability is good because the above-mentioned weight-average molecular weight is low.

[0625] In addition, for Reference Examples 1 to 3, the proportion of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90% by mass or more, and the proportion of the siloxane compound relative to the total mass of the intermediate layer is 10% by mass or less.

[0626] Furthermore, for Reference Examples 1 and 2, the pick-up property of the silicon chip with the film adhesive after expansion is excellent.

[0627] For Reference Examples 1 and 2, the T-peel strength between the intermediate layer and the film adhesive is 100 mN / 50 mm or less, which is moderately low, and the proportion of the silicon concentration in the intermediate layer is 9%, which is moderately high. These results are consistent with the evaluation results of the pick-up property of the silicon chip with the film adhesive described above.

[0628] For Reference Example 3, the intermediate layer in the semiconductor device manufacturing sheet does not contain the siloxane compound.

[0629] Although the difference between the semiconductor device manufacturing sheets of Reference Examples 1 and 2 is only in the thickness of the intermediate layer, compared with the semiconductor device manufacturing sheet of Reference Example 1, the T-peel strength between the intermediate layer and the film adhesive of the semiconductor device manufacturing sheet of Reference Example 2 is smaller, and the pick-up of the silicon chip with the film adhesive of Reference Example 2 is easier than that of Reference Example 1. It is speculated that this is because even though the proportion (mass%) of the siloxane compound in the intermediate layer is the same in the semiconductor device manufacturing sheets of Reference Examples 1 and 2, the content (mass parts) of the siloxane compound in the intermediate layer of Reference Example 2 is more than that of Reference Example 1, and the siloxane compound is likely to be unevenly present in the two surfaces and the adjacent regions of the intermediate layer, so the amount of the siloxane compound unevenly present in the two surfaces and the adjacent regions of the intermediate layer of Reference Example 2 is more than that of Reference Example 1.

[0630] In addition, for Reference Examples 1 to 3, when XPS analysis is performed on the exposed surface of the intermediate layer, nitrogen is not detected.

[0631] In contrast, for Comparative Examples 1 to 3, when the blade cutting was performed, the generation of cutting chips was not suppressed, and the dicing suitability of the semiconductor wafer was poor.

[0632] For Comparative Examples 1 and 2, the weight-average molecular weight of the ethylene-vinyl acetate copolymer as the main component contained in the intermediate layer of the semiconductor device manufacturing sheet was 200,000.

[0633] For Comparative Example 3, the intermediate layer was not provided, the blade reached the adhesive layer, and cutting chips from the adhesive layer were generated.

[0634] In addition, the difference between the semiconductor device manufacturing sheets of Comparative Examples 1 and 2 was only in the thickness of the intermediate layer, and the relationship between the T-peel strength between the intermediate layer and the film adhesive in Comparative Examples 1 and 2 showed the same tendency as in Reference Examples 1 and 2.

[0635] Furthermore, for Comparative Examples 1 and 2, when XPS analysis was performed on the exposed surface of the intermediate layer, nitrogen was not detected.

[0636] <<Manufacture and Evaluation of Semiconductor Device Manufacturing Sheet (2)>>

[0637] [Example 1]

[0638] The semiconductor device manufacturing sheet of Reference Example 3 was used for the following evaluation.

[0639] <Evaluation of Chip Attachment Inhibition Effect during Cutting of Laser-Based Film Adhesive>

[0640] · Manufacture of a singulated silicon chip group using DBG

[0641] For a mirror-polished silicon wafer with a diameter of 200 mm and a thickness of 720 μm, a cutting device (DFD-6361, manufactured by DISCO Corporation) was used to cut into the wafer to a depth of 70 μm to form grooves with a chip size of 5 mm × 5 mm.

[0642] Next, a surface protection film (Adwill E-3125KL, manufactured by Lintec Corporation) was attached to the surface on which the grooves were formed.

[0643] Then, using a back grinding device (DGP-8760, manufactured by DISCO Corporation), the back surface of the wafer was ground until the thickness reached 50 μm, and the wafer was diced into chips to obtain a silicon chip group. The surface of the surface protection film was irradiated with ultraviolet light (irradiance: 220 mW / cm 2 , light quantity: 380 mJ / cm2 )。

[0644] ·Manufacture of silicon chip set with film - like adhesive

[0645] Using the wafer for manufacturing semiconductor devices obtained in the above - mentioned Reference Example 3 and the silicon chip set singulated by the above - mentioned DBG. Similar to the above - mentioned Reference Example 1, the silicon chip set is attached to the wafer for manufacturing semiconductor devices to obtain a laminate in which a base material, an adhesive layer, an intermediate layer, a film - like adhesive, a silicon chip set, and a surface protection sheet are laminated in this order along their thickness directions (the laminate in which the laminated sheet, the film - like adhesive, the silicon chip set, and the surface protection sheet are laminated in this order along their thickness directions).

[0646] Next, the obtained laminate is transported to a peeling unit to peel the surface protection sheet. At this time, the temperature of the adsorption workbench for fixing the chip of the sheet with the adhesive resin layer attached is set to 50 °C, and the surface protection sheet is heated and peeled by bringing it close to the same temperature.

[0647] <Evaluation of the effect of suppressing debris adhesion>

[0648] Using a laser cutter DFL7160 manufactured by DISCO Corporation, laser is irradiated to the groove between silicon chips from the side of the film - like adhesive, and the film - like adhesive is cut with the laser. The depth of the irradiated laser, measured as the distance from the surface of the film - like adhesive, is set to the value described in Table 2. Then, the chip surface is washed with a spinner.

[0649] The amount of attachments on the chip surface of the chip peripheral part within 100 μm from the end of a 5 mm×5 mm chip is observed using a microscope. A total of 4 sides of 10 chips are observed, and a chip with an attachment having a major axis of 50 - 100 μm that can be regarded as debris is marked as NG. The number of NG chips among 10 chips is counted. The results are shown in Table 2.

[0650] <Evaluation of pick - up property>

[0651] Using the same operations and evaluation criteria as in the above - mentioned Reference Example 1, the pick - up property of the silicon chip with a film - like adhesive is evaluated. The results are shown in Table 2.

[0652] <Measurement of T - peel strength between the intermediate layer and the film - like adhesive>

[0653] Using the same operations and evaluation criteria as in the above - mentioned Reference Example 1, the T - peel strength of the silicon chip with a film - like adhesive is evaluated. The results are shown in Table 2.

[0654] [Example 2]

[0655] Using the sheet for manufacturing a semiconductor device of Reference Example 1, the effects of suppressing debris adhesion, the pick-up property, and the T-peel strength were evaluated and measured.

[0656] [Comparative Example 4]

[0657] Except that the siloxane compound was not added to the sheet for manufacturing a semiconductor device of Comparative Example 1, the amount of the ethylene-vinyl acetate copolymer was set to 16.5 g instead of 15 g, and the thickness of the intermediate layer was made 20 μm, a sheet for manufacturing a semiconductor device was manufactured by the same method as in Comparative Example 1, and the effects of suppressing debris adhesion, the pick-up property, and the T-peel strength were evaluated and measured.

[0658] [Comparative Example 5]

[0659] Using the sheet for manufacturing a semiconductor device of Comparative Example 3, the effects of suppressing debris adhesion, the pick-up property, and the T-peel strength were evaluated and measured.

[0660] [Comparative Example 6]

[0661] Except that the laser depth at the time of cutting the film-like adhesive was changed to the value described in Table 2 in Comparative Example 4 above, the effects of suppressing debris adhesion, the pick-up property, and the T-peel strength were evaluated and measured in the same manner as in Comparative Example 4 above.

[0662] [Table 2]

[0663]

[0664] From the above results, it can be seen that for Examples 1 to 2, the generation of debris was suppressed when the film-like adhesive was cut by laser.

[0665] For Examples 1 to 2, the weight-average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer of the sheet for manufacturing a semiconductor device was 30,000, and the adhesive layer was not cut by laser irradiation.

[0666] In addition, for Example 2, the pick-up property of the silicon chip with the film-like adhesive was excellent.

[0667] For Example 2, the T-peel strength between the intermediate layer and the film-like adhesive was 100 mN / 50 mm or less, which was moderately low. And the proportion of the silicon concentration in the intermediate layer was 9%, which was moderately high. These results were consistent with the evaluation results of the pick-up property.

[0668] In contrast, for Comparative Examples 4 to 6, the generation of debris was not suppressed when the film-like adhesive was cut by laser.

[0669] For Comparative Example 4, the weight-average molecular weight of the ethylene-vinyl acetate copolymer as the main component contained in the intermediate layer in the semiconductor device manufacturing sheet was 200,000.

[0670] For Comparative Example 5, it was considered that since the intermediate layer was not provided, the laser reached the adhesive layer, and debris from the adhesive layer was generated.

[0671] For Comparative Example 6, it was considered that since the laser depth was set to 30 μm, the laser reached the adhesive layer, and debris from the adhesive layer was generated.

[0672] Each configuration and its combination in each embodiment are examples, and additions, omissions, substitutions, and other changes to the configuration can be made without departing from the gist of the present invention. In addition, the present invention is not limited by each embodiment, but is only limited by the scope of the claims.

[0673] Industrial Applicability

[0674] The present invention can be used for the manufacture of semiconductor devices.

[0675] Description of Reference Numerals

[0676] 101: Semiconductor device manufacturing sheet; 11: Substrate; 12: Adhesive layer; 13: Intermediate layer; 13a: First surface of the intermediate layer; 14: Film adhesive.

Claims

1. A method for manufacturing a semiconductor chip with a film-like adhesive, which is a method for manufacturing a semiconductor chip with a film-like adhesive having a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. In the manufacturing method, a semiconductor device manufacturing wafer is used, the semiconductor device manufacturing wafer includes a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, the semiconductor device manufacturing wafer is formed by sequentially laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, the intermediate layer contains an ethylene-vinyl acetate copolymer having a weight-average molecular weight of 100,000 or less and accounting for 50% by mass or more of the total mass of the intermediate layer, when analyzing the surface of the intermediate layer on the film-like adhesive side by X-ray photoelectron spectroscopy, the proportion of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon is 1 to 20%, the manufacturing method includes: a step of producing a laminate of the semiconductor device manufacturing wafer and the semiconductor chip by bonding the film-like adhesive of the semiconductor device manufacturing wafer to the back surface of the semiconductor chip; and a step of obtaining a semiconductor chip with a film-like adhesive by irradiating the laminate with a laser along the outer periphery of the semiconductor chip from the side where the semiconductor chip is laminated on the laminate so as not to cut into the adhesive layer.

2. The method for manufacturing a semiconductor chip with a film-like adhesive according to claim 1, wherein, After the step of obtaining the semiconductor chip with a film-like adhesive, there is further a step of picking up the semiconductor chip with a film-like adhesive by pulling it away from the intermediate layer.

3. The manufacturing method of the semiconductor chip with a film-like adhesive according to claim 1 or 2, wherein, The semiconductor chip is a semiconductor chip group singulated by DBG, and DBG means dicing first and then grinding.

4. The manufacturing method of a semiconductor chip with a film-like adhesive according to claim 1, wherein, In the ethylene-vinyl acetate copolymer, the proportion of the structural unit derived from vinyl acetate to the total mass of all structural units is 30% by mass or less.

5. The manufacturing method of the semiconductor chip with a film-like adhesive according to claim 1 or 2, wherein, The intermediate layer further contains a siloxane compound, in the intermediate layer, the content of the ethylene-vinyl acetate copolymer accounts for 90 to 99.99% by mass of the total mass of the intermediate layer, in the intermediate layer, the content of the siloxane compound accounts for 0.01 to 10% by mass of the total mass of the intermediate layer.

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