Method for electrically conductively contacting an optoelectronic component having at least one protective layer, and optoelectronic component having such contacting

Abstract

The invention relates to a method for electrically conductively contacting an optoelectronic component (10) having at least one protective layer (7), wherein: a) an optoelectronic component (10) having the at least one protective layer (7) is provided, wherein the optoelectronic component (10) has at least one busbar (1) arranged below the at least one protective layer (7); b) at least one opening (8) is formed in the at least one protective layer (7) by laser ablation using at least one laser beam, wherein the wavelength of the laser light is in the range of 8 pm to 12 pm, wherein at least one busbar (1) arranged below the at least one protective layer (7) is formed. A busbar (1) is at least partially exposed so that the at least one busbar (1) is not damaged; c) a low melting point solder is introduced into at least one opening (8) of the at least one protective layer (7), and a flexible conductive element (2) is aligned and fixed on a side of the at least one opening (8) opposite to the at least one busbar (1); and d) a conductive connecting element (11) is formed in the at least one opening (8) by induction welding with uniform heat input, so that the conductive element (2) and the at least one busbar (1) are conductively contacted via the at least one connecting element (11).

Description

[0001] The invention relates to a method for electrically conductively contacting an optoelectronic component having at least one protective layer, and to an optoelectronic component having such a contact.

[0002] Optoelectronics consists of the fields of optics and semiconductor electronics. It specifically covers systems and methods capable of converting energy generated by electrons into light emission or converting light emission into energy. Optoelectronic components, specifically organic photovoltaic elements (OPV) and organic light emitting diodes (OLED), generate electrical energy or convert electrical energy into light emission, which must then be led out or introduced from the photovoltaic element for application purposes. This requires so-called busbars, which must meet the requirements of flexible photovoltaic elements. The busbars constitute the points in the optoelectronic component at which the converted energy is concentrated and transmitted in the form of electric current. In the field of photovoltaic elements, it is known that busbars are applied to the front or back of the photovoltaic element. The cross-sectional size of the busbar depends on the current intensity to be transmitted. However, in order to prevent external influences, photovoltaic elements are usually provided with or encapsulated with a protective layer, specifically in order to mechanically protect these photovoltaic elements and protect them from environmental influences, such as moisture or oxygen diffusion. The busbars are arranged below the protective layer. In order to lead the electrical energy generated from the photovoltaic element through the protective layer, the busbars located in the protective layer must be conductively contacted through the protective layer.

[0003] WO 2009 / 13468 A1 discloses a method for contacting an optoelectronic component, wherein the contact is made by drilling or milling. In this case, after the lamination of the optoelectronic component is completed, a specific area of ​​the lamination layer is completely pierced or removed, and the exposed contact area is contacted by a connecting element that can be tapped from the outside.

[0004] DE 102007052972 A1 discloses a method for connecting a thin metal layer on a polymer carrier (e.g. a solar cell), which method uses a laser beam to open the polymer layer and then rivet the thin metal layer to connect the metal layer. In this method, a laser with different energies and time control of the applied laser energy is used to introduce an opening into the polymer carrier film and rivet the thin metal layer.

[0005] JP 2015154049 A discloses a flexible thin-film solar cell having a protective layer on the front side of the solar cell and a protective layer on the back side, the solar cell having a connecting element and a connecting terminal connected to the connecting element. The connecting terminal is connected to a connecting terminal arranged on a side surface of the solar cell for the purpose of extracting current, and the thickness of the connecting terminal is smaller than the layer thickness of the solar cell.

[0006] US 20110308562 A1 discloses a junction box for a photovoltaic element having a protective layer, wherein the junction box has a contact point configured to pierce the protective layer so as to form an electrically conductive contact with the photovoltaic element having the protective layer.

[0007] However, a disadvantage of the prior art is that known methods for electrically conductively contacting photovoltaic components having at least one protective layer adversely affect the function of the protective layer and / or at least partially damage the underlying element. Furthermore, the known methods are particularly unsuitable for roll-to-roll processes for producing photovoltaic elements.

[0008] The invention is therefore based on the object of providing a method for electrically conductively contacting a photovoltaic component having at least one protective layer, wherein the mentioned disadvantages do not occur and wherein, in particular in a roll-to-roll method, a simple and reliable electrical contacting of a photovoltaic component having at least one protective layer is provided, wherein in particular the function of the at least one protective layer and / or elements arranged thereunder is not adversely affected, in particular these elements are not damaged.

[0009] This object is achieved by a method for electrically conductively contacting an optoelectronic component having at least one protective layer and by an optoelectronic component as described below. The invention also has advantageous configurations.

[0010] The object is achieved in particular by providing a method for electrically conductively contacting an optoelectronic component, in particular a flexible optoelectronic component, having at least one protective layer. The method comprises the following method steps:

[0011] a) providing the photovoltaic component with the at least one protective layer, wherein the photovoltaic component has at least one busbar arranged below the at least one protective layer,

[0012] b) forming at least one opening in the at least one protective layer by laser ablation using at least one laser beam, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein at least one busbar arranged below the at least one protective layer is partially exposed, such that the at least one busbar is not damaged,

[0013] c) introducing a low melting point solder into at least one opening of the at least one protective layer, and aligning and fixing a flexible conductive element on a side of the at least one opening opposite to the at least one busbar, and

[0014] d) forming at least one electrically conductive connecting element in the at least one opening by induction welding with uniform heat input, so that the electrically conductive element and the at least one busbar are in electrically conductive contact via the at least one connecting element.

[0015] In a preferred embodiment, after d), the conductive element is at least partially coated on the surface with an insulating layer.

[0016] In a preferred embodiment, at least one opening is formed in the protective layer by laser ablation, so that an electrically conductive contact between the busbar and the conductive element is possible.

[0017] In a preferred embodiment, in order to form at least one opening by laser ablation in step b), parameters, preferably energy density, pulse duration, pulse shape, pulse frequency and / or wavelength of at least one laser beam are adapted depending on the material and layer thickness of at least one protective layer.

[0018] In a preferred embodiment, a continuous laser is used. In an alternative preferred embodiment, a pulsed laser is used. In a preferred embodiment, the pulse duration of the laser in step b) is less than 60 μs, preferably less than 40 μs, preferably less than 20 μs, preferably less than 10 μs, preferably less than 8 μs, preferably less than 6 μs or preferably less than 4 μs.

[0019] In a preferred embodiment, the wavelength range of the laser in step b) is 8 μm to 12 μm, preferably 9 μm to 12 μm, preferably 10 μm to 12 μm, preferably 11 μm to 12 μm, preferably 8 μm to 11 μm, preferably 8 μm to 10 μm, preferably 8 μm to 9 μm, preferably 9 μm to 11 μm, preferably 9 μm to 10 μm or preferably 10 μm to 11 μm.

[0020] In a preferred embodiment, in order to form the connecting element by induction welding in step d), the parameters are adapted depending on the material and dimensions of the connecting element to be formed, so that induction welding ensures the formation of a connecting element for electrically conductively contacting at least one busbar and the conductive element, and in the process the at least one busbar and the layer system are not damaged.

[0021] In a preferred embodiment, the evaporated substance is extracted by suction during the laser ablation in step b) and / or during the induction welding in step d).

[0022] In a preferred embodiment, in the case of laser ablation in step b), the energy density of at least one laser beam is adapted during ablation as a function of the removal depth of the at least one protective layer.

[0023] In a preferred embodiment, the cycle time of the laser ablation in step b) is less than 4 s, preferably less than 2 s, and / or the cycle time of the induction welding in step d) is less than 10 s, preferably less than 4 s.

[0024] In a preferred embodiment, in step b), at least one opening is introduced into at least one protective layer on the side of the photovoltaic component, preferably a solar cell, facing away from the sun as intended.

[0025] The so-called busbar is understood to mean in particular an arrangement which is preferably electrically conductively connected to input and output lines with at least one electrode and / or at least one counter-electrode as a central distributor of electrical energy for the purpose of electrical contact. The busbar is in particular implemented in a planar manner as a strip, a strip, a plate or a metal layer.

[0026] In a preferred embodiment, the layer thickness of at least one busbar is 10 to 500 μm, preferably 100 to 500 μm, preferably 10 to 200 μm, preferably 10 to 100 μm, preferably 10 to 50 μm or preferably 20 to 40 μm.

[0027] In a preferred embodiment, the at least one busbar has a low absorptivity for heat and / or a high reflectivity for the wavelength of at least one laser beam, so that the at least one busbar is only slightly heated during the laser ablation in step b).

[0028] Optoelectronic component is understood to mean in particular a photovoltaic element.

[0029] Photovoltaic element is understood to mean in particular a photovoltaic cell, in particular a solar cell. A photovoltaic element preferably consists of a plurality of photovoltaic cells which can be interconnected in series or in parallel. A plurality of photovoltaic cells can be arranged and / or interconnected in various ways in an optoelectronic component.

[0030] In a preferred embodiment, the optoelectronic component, in particular the photovoltaic element, comprises at least one electrode, a counter-electrode and a layer system having at least one photoactive layer, wherein the layer system is arranged between the two electrodes and wherein at least one busbar is at least partially electrically conductively contacted at the electrode and / or the counter-electrode.

[0031] In a preferred embodiment, the electrode, the layer system and the counter-electrode are laser structured so that the electrode and / or the counter-electrode can be electrically conductively contacted with at least one busbar from the side of the photovoltaic component facing away from the sun as intended or from the side of the photovoltaic component facing the sun as intended. This is achieved in particular via at least one busbar in a plane of the photovoltaic component, in particular a plane parallel to the extension direction of the laser system, at different potentials. In a preferred embodiment, two busbars are arranged at the electrode and / or the counter-electrode, wherein a first busbar is assigned to a first potential and a second busbar is assigned to a second potential.

[0032] In a preferred embodiment, the optoelectronic component is a flexible optoelectronic component. In a preferred embodiment, the flexible optoelectronic component is a flexible photovoltaic element, in particular a flexible organic photovoltaic element.

[0033] A flexible optoelectronic component is understood to mean in particular an optoelectronic component which is bendable and / or extendable in certain areas.

[0034] In a preferred embodiment, the photovoltaic element comprises a cell having at least one photoactive layer, in particular a CIS, CIGS, GaAs or Si cell, a perovskite cell or an organic photovoltaic element (OPV), i.e. a so-called organic solar cell. An organic photovoltaic element is understood to mean in particular a photovoltaic element having at least one organic photoactive layer, in particular a polymer organic photovoltaic element or an organic photovoltaic element based on small molecules. While polymers are characterized in that they are not evaporable and can therefore only be applied from a solution, small molecules are generally evaporable and can be applied either as a solution like a polymer or by evaporation techniques, in particular by evaporation from a vacuum. Particularly preferably, the photovoltaic element is a flexible organic photovoltaic element based on small molecules.

[0035] In a preferred embodiment, the photosensitive layer of the layer system comprises small molecules which are evaporable in a vacuum.In a preferred embodiment, at least the photosensitive layer of the layer system is applied by vapour deposition in a vacuum.

[0036] Small molecules are understood to mean, in particular, non-polymeric organic molecules having a monodisperse molar mass between 100 and 2000 g / mol, which exist in the solid phase at standard pressure (the pressure of the surrounding atmosphere) and room temperature. In particular, small molecules are photosensitive, wherein photosensitive is understood to mean that the molecule changes its charge state and / or its polarization state when incident on light.

[0037] A protective layer is understood to mean in particular a barrier layer for preventing the possible passage of external influences, in particular atmospheric oxygen and / or moisture, a protective layer for increasing the mechanical durability, in particular scratch resistance, and / or a filter layer, preferably a layer with a UV filter.

[0038] An element arranged below the protective layer is understood to mean in particular an element which is arranged at the protective layer such that the protective layer protects it from external influences.

[0039] In a preferred embodiment, the photovoltaic component has at least one protective layer on the front side of the photovoltaic component and at least one protective layer on the back side. In a preferred embodiment, at least one of the at least one protective layer on the front side is bonded to one of the at least one protective layer on the back side with an adhesive.

[0040] The front side of a photovoltaic component is understood to mean in particular the side of the photovoltaic component that is intended to face the sun. Correspondingly, the back side of a photovoltaic component is understood to mean in particular the side of the photovoltaic component that is intended to face away from the sun.

[0041] In a preferred embodiment, the optoelectronic component has an encapsulation consisting of at least one protective layer, which encapsulation surrounds (ie seals) the optoelectronic component in a diffusion-proof manner. In a preferred embodiment, the encapsulation is a polymer encapsulation.

[0042] In a preferred embodiment, the photovoltaic component is in conductive contact with the conductive element from the side facing away from the sun as intended.

[0043] In a preferred embodiment, the conductive element is arranged directly on the at least one protective layer. In an alternative preferred embodiment, the conductive element is arranged on a conductive connecting layer applied on the at least one protective layer.

[0044] In a preferred embodiment, the conductive element is implemented as a cross-connector.

[0045] In a preferred embodiment, a functional layer, preferably a color layer, a filter layer and / or an adhesive layer is at least partially arranged between the at least one protective layer and the conductive element. In a preferred embodiment, the functional layer is applied to the at least one protective layer by a roll-to-roll process.

[0046] In a preferred embodiment, in step c) and / or d), the flexible conductive element is fixed on a side of the at least one opening opposite to the at least one busbar.

[0047] In a preferred embodiment, in step c), the flexible conductive element is fixed on a side of the at least one opening opposite to the at least one busbar by means of a fixing tape, preferably an adhesive tape.

[0048] In a preferred embodiment, in step c) and / or d), the conductive element is fixed on the side of the at least one opening opposite to the at least one busbar by applying pressure.

[0049] In a preferred embodiment, a connecting material, in particular an adhesive, is applied between the at least one busbar and the at least one protective layer, wherein the at least one protective layer and the at least one busbar are preferably connected in a self-locking manner. In a preferred embodiment, the connecting material is at least substantially transmissive to visible light.

[0050] In a preferred embodiment, the optoelectronic component has two protective layers arranged one above the other, preferably three protective layers arranged one above the other or preferably four protective layers arranged one above the other. In a preferred embodiment, at least one connecting material, in particular an adhesive, is arranged between the protective layers, wherein the type of at least one connecting material can be different between the individual protective layers.

[0051] In a preferred embodiment, at least one protective layer is implemented by a film or a coating, which preferably consists of a lacquer or a polymer.

[0052] In a preferred embodiment, the at least one protective layer is implemented by at least one front-side film and at least one back-side film of the photovoltaic component. In a preferred embodiment, the at least one protective layer is implemented as an encapsulant.

[0053] In a preferred embodiment, the at least one busbar is covered by at least one protective layer, such that the at least one busbar does not extend beyond the protective layer and is therefore not electrically contactable via cables outside the at least one protective layer.

[0054] In the context of the present invention, uniform heat input is understood to mean in particular that the welding point is heated uniformly from all sides during induction welding, in particular in order to obtain a temperature distribution in the welding point that is as uniform as possible.

[0055] In connection with the present invention, a low-melting solder is understood to mean in particular a solder which melts below a temperature at which at least the electrodes and the layer system of the optoelectronic component are not damaged; preferably, the low-melting solder solders without flux.

[0056] The method for conductively contacting a photovoltaic component with at least one protective layer according to the present invention has advantages over the prior art. Advantageously, a simple and reliable conductive contact of the photovoltaic component is ensured. Advantageously, damage to the layer system and / or the electrode is avoided. Advantageously, the heat input is limited in time and heat, thereby avoiding damage to the adjacent layer system. Advantageously, the busbar, in particular the busbar implemented as a thin metal layer, and the conductive connecting material arranged between the electrode and / or the counter electrode and at least one busbar are not damaged. Advantageously, the diffusion resistance of at least one protective layer is not weakened. Advantageously, the method is particularly cost-effective. Advantageously, the method can be performed in a roll-to-roll method. Advantageously, mechanical stresses between at least one busbar and the conductive element and cracking caused thereby are avoided by non-contact and uniform heat input. Advantageously, no cable is required to conductively contact at least one busbar with a junction box. Advantageously, multiple busbars, in particular multiple connecting elements, can be connected via conductive contact. Advantageously, only one junction box is required to conductively contact the photovoltaic component. Advantageously, precise repeat accuracy and a high degree of automation with short cycle times are possible. Advantageously, the junction box can be easily integrated at different areas of the photovoltaic component. Advantageously, the number of potential weak points is reduced in the case of an integrated junction box. Advantageously, a photovoltaic element with such a contact can be fixed to a surface in a self-locking manner.

[0057] According to a development of the invention, it is provided that after step d), at least one electrically conductive element is electrically conductively connected to a junction box, wherein the junction box is arranged on the optoelectronic component, preferably on a region at a distance from a corner of the optoelectronic component.

[0058] In a preferred embodiment, the junction box is arranged directly on the surface of the photovoltaic component.

[0059] In a preferred embodiment, the junction box is arranged at the edge of at least one protective layer and / or the encapsulation of the photovoltaic component. In a preferred embodiment, the junction box is bonded to the surface of the photovoltaic component with an adhesive.

[0060] A junction box is understood to mean in particular an element for connecting an optoelectronic component to an electrical circuit. The junction box is used in particular to electrically conductively connect at least one busbar arranged below at least one protective layer of the optoelectronic component to the electrical circuit.

[0061] In a preferred embodiment, the junction box is arranged on a region of the photovoltaic component which has no layer system, in particular no photoactive layer, so that degradation processes of the photoactive layer are avoided.

[0062] According to a development of the invention, it is provided that the laser medium of at least one laser beam in step b) is CO 2 .

[0063] According to a development of the invention, it is provided that, in step c), a solder preform is introduced into the at least one opening. In a preferred embodiment, the solder preform is formed from a low-melting solder.

[0064] According to a development of the invention, it is provided that at least one opening has a cross-sectional area of ​​0.1 mm 2 Up to 75mm 2 , preferably 1 mm 2 Up to 30mm 2 , wherein, preferably, a contact area between the connecting element and at least one busbar and / or the conductive element is smaller than an area of ​​the busbar facing the connecting element.

[0065] In a preferred embodiment, the cross-sectional area of ​​at least one opening is 0.1 mm 2 Up to 75mm 2 , preferably 0.1 mm 2 Up to 30mm 2 , preferably 1 mm 2 Up to 75mm 2 , preferably 1 mm 2 Up to 30mm 2 , preferably 1 mm 2 Up to 10mm 2 , preferably 0.1 mm 2 Up to 10mm 2 , preferably 20 mm 2 Up to 50mm 2 Or preferably 10 mm 2 Up to 30mm 2 .

[0066] In a preferred embodiment, the opening is formed in a circular shape, but in an alternative preferred embodiment, the opening may be formed in a different polygonal or elliptical shape, specifically a square, a triangle, a hexagon or an octagon.

[0067] In a preferred embodiment, the diameter of the at least one opening is 10 μm to 5 mm, preferably 100 μm to 5 mm, 1 mm to 5 mm, preferably 1 mm to 2 mm, preferably 10 μm to 1 mm, preferably 100 μm to 1 mm or preferably 10 μm to 100 μm.

[0068] In a preferred embodiment, the cross-sectional area of ​​the connecting element is 0.1 mm 2 Up to 75mm 2 , preferably 0.1 mm 2 Up to 30mm 2 , preferably 1 mm 2 Up to 75mm 2 , preferably 1 mm 2 Up to 30mm 2 , preferably 1 mm 2 Up to 10mm 2 , preferably 0.1 mm 2 Up to 10mm 2 , preferably 20 mm 2 Up to 50mm 2 Or preferably 10 mm 2 Up to 30mm 2 .

[0069] In a preferred embodiment, the opening is formed in a circular shape, but in an alternative preferred embodiment, the opening may be formed in a different polygonal or elliptical shape, specifically a square, a triangle, a hexagon or an octagon.

[0070] In a preferred embodiment, the diameter of the connecting element is 10 μm to 5 mm, preferably 100 μm to 5 mm, preferably 1 mm to 5 mm, preferably 1 mm to 2 mm, preferably 10 μm to 1 mm, preferably 100 μm to 1 mm or preferably 10 μm to 100 μm.

[0071] In a preferred embodiment, the cross-sectional area of ​​the at least one opening at least substantially corresponds to the cross-sectional area of ​​the connecting element.

[0072] According to a development of the invention, it is provided that the low-melting solder for forming the connection element is selected from the group consisting of: bismuth, copper, silver and tin and alloys of at least one of these elements. In a particularly preferred embodiment, the low-melting solder for forming the connection element is formed by tin and bismuth or alloys thereof, preferably by tin, bismuth, copper and silver. In a preferred embodiment, the low-melting solder has a maximum of 5% by weight, preferably a maximum of 2% by weight of other element contaminants.

[0073] In a preferred embodiment, at least one protective layer is implemented by a film, in particular a light-transmitting film. In a preferred embodiment, at least one protective layer is implemented by ethylene tetrafluoroethylene (ETFE), ethylene vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polypropylene (PP) or thermoplastic polyurethane (TPU).

[0074] According to one development of the invention, it is provided that at least one connecting material, preferably an adhesive, is arranged between at least one protective layer and at least one busbar, wherein in step b), at least one opening is formed in at least one protective layer and in the connecting material arranged on the at least one protective layer.

[0075] In a preferred embodiment, the connecting material is connected to the at least one protective layer and / or the at least one busbar in a self-locking manner. In a preferred embodiment, the connecting material is an at least substantially light-transmissive adhesive.

[0076] In a preferred embodiment, the conductive contact of at least one busbar with the conductive element and the conductive contact of the conductive element with the junction box is performed without a cable. In an alternative preferred embodiment, the conductive contact of the conductive element with the junction box is performed via at least one cable.

[0077] In a preferred embodiment, the layer thickness of the at least one protective layer is 10 μm to 500 μm, preferably 100 μm to 500 μm, preferably 10 μm to 100 μm, preferably 10 μm to 50 μm or preferably 20 μm to 40 μm.

[0078] According to one development of the invention, it is provided that the electrically conductive element is embodied as a plate or strip, wherein the layer thickness of the plate or strip is preferably 10 μm to 100 μm, preferably 10 μm to 60 μm, or as a wire, wherein the cross-sectional area of ​​the wire is preferably 0.1 mm 2 Up to 2mm 2 , preferably 0.5 mm 2 Up to 1mm 2 .

[0079] In a preferred embodiment, the layer thickness of the electrically conductive element is 10 to 500 μm, 10 to 200 μm, preferably 100 to 200 μm, preferably 10 to 100 μm, preferably 10 to 60 μm or preferably 20 to 40 μm.

[0080] In a preferred embodiment, the cross-sectional area of ​​the conductive element is 0.1 mm 2 Up to 2mm 2 , preferably 0.1 mm 2 Up to 1.5mm 2 , preferably 0.2 mm 2 Up to 1.5mm 2 , preferably 0.5 mm 2 Up to 1.5mm 2 , preferably 0.2 mm 2 Up to 1mm 2 or preferably 0.5 mm 2 Up to 1mm 2 .

[0081] According to one development of the invention, it is provided that the at least one busbar is embodied as a metal layer of at least one metal or an alloy thereof, preferably of copper and tin, wherein the at least one busbar and the conducting element are preferably embodied from the same material.

[0082] In a preferred embodiment, at least one busbar is adhesively connected to the connecting element and / or the conducting element is adhesively connected to the connecting element.

[0083] In a preferred embodiment, after the induction welding in step d), a sealing material is applied in and / or on the opening with the connecting element, so that at least one opening with the connecting element is sealed.

[0084] According to one development of the invention, it is provided that, after step d), at least one electrically conductive element is electrically conductively connected to a junction box, wherein the junction box is arranged on the optoelectronic component.

[0085] In a preferred embodiment, for the purpose of conductively connecting the junction box to the conductive element of the photovoltaic component having at least one protective layer after step d), in step e), at least one connection opening is formed in the at least one protective layer by laser ablation using at least one laser beam using the conductive element obtained in step d), preferably from the side of the photovoltaic component having at least one protective layer that is intended to face the sun, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein the conductive element arranged behind the at least one protective layer on the side that is intended to face away from the sun is at least partially exposed, so that the conductive element is not damaged.

[0086] In an alternative preferred embodiment, in step e), at least one connection opening is introduced into the insulating layer of the electrically conductive element on the side of the photovoltaic component, preferably of the solar cell, facing away from the sun as intended.

[0087] The implementation of the laser ablation with the relevant parameters in step e) corresponds essentially to that in step b).

[0088] In a preferred embodiment, for the purpose of forming at least one connecting opening by laser ablation in step e), the parameters, preferably the energy density, pulse duration, pulse shape, pulse frequency and / or wavelength of at least one laser beam are adapted depending on the material and layer thickness of at least one protective layer.

[0089] In a preferred embodiment, the laser medium of at least one laser beam in step e) is CO2.

[0090] In a preferred embodiment, the cross-sectional area of ​​at least one connecting opening is 0.1 mm 2 Up to 75mm 2 , preferably 1 mm 2 Up to 40mm 2 or preferably 1 mm 2 Up to 30mm 2 .

[0091] In a preferred embodiment, in step f), solder is introduced into at least one connection opening of at least one protective layer formed in step e), and a junction box is aligned and fixed on the side of the at least one connection opening opposite to the conductive element, and in step g), a conductive connection element is formed in the at least one connection opening by induction soldering, so that the conductive element and the junction box are conductively contacted via the at least one connection element.

[0092] In a preferred embodiment, in step f) and / or step g), the junction box is fixed on a side of the at least one connection opening opposite to the conductive element.

[0093] In a preferred embodiment, in step e), at least one connection opening is introduced into at least one protective layer on the side of the photovoltaic component, preferably a solar cell, intended to face the sun.

[0094] In a preferred embodiment, for the purpose of forming the connecting element by induction welding in step g), the parameters are adapted depending on the material and the dimensions of the connecting element to be formed.

[0095] In a preferred embodiment, in step f), a solder preform is introduced into the at least one opening. In a preferred embodiment, the terminal box has a solder preform. In an alternative preferred embodiment, in step g), the terminal box, in particular the connecting wires of the terminal box, are adhesively connected to the connecting element.

[0096] In a preferred embodiment, the cross-sectional area of ​​the connecting element is 0.1 mm 2 Up to 75mm 2 , preferably 1 mm 2 Up to 40mm 2 or preferably 1 mm 2 Up to 30mm 2 .

[0097] In a preferred embodiment, the solder used to form the connection element is selected from the group consisting of bismuth, copper, silver and tin and alloys of at least one of these elements.

[0098] In a preferred embodiment, the conducting element and the junction box are directly in conductive contact via the connecting element, wherein in particular no additional cable is arranged between the conducting element and the junction box for the purpose of conductive contact.

[0099] In a preferred embodiment, after the induction welding in step g), a sealing material is applied and / or introduced in and / or onto the connection opening with the connection element so that at least one connection opening with the connection element is sealed; preferably, the sealing material is silicone and / or resin.

[0100] In an alternative preferred embodiment, the junction box is conductively connected to the conductive element via a plug connection.The junction box can thus be reversibly mounted particularly easily at the optoelectronic component, in particular at the mounting location of the optoelectronic component.

[0101] In a preferred embodiment, the junction box has a diode.

[0102] Organic photovoltaic elements, in particular organic solar cells, consist of a series of thin layers including at least one photosensitive layer, which are preferably applied by vapor deposition in a vacuum or processed from a solution. The electrical connection can be achieved by metal layers, transparent conductive oxides and / or transparent conductive polymers. Vacuum vapor deposition of organic layers is particularly advantageous for producing multilayer solar cells, in particular tandem cells or triple cells.

[0103] In a preferred embodiment, the photovoltaic element, in particular the organic photovoltaic element, is implemented by at least one cell. In a preferred embodiment, the cell is a single cell, a tandem cell or a multicell. Tandem cells and multicells consist of at least two cells arranged one above the other between electrodes, wherein each cell has at least one photoactive layer.

[0104] In a preferred embodiment, a plurality of cells of the photovoltaic element are arranged in strips with contacts adjacent to each other and interconnected in series. Preferably, in this case, each cell has its own electrode and counter-electrode. The series connection is achieved by electrically connecting the electrode of one cell to the counter-electrode of the next cell.

[0105] In a preferred embodiment, the optoelectronic component is additionally provided with a barrier layer and / or is additionally encapsulated with a barrier layer in order to minimize degradation due to external influences.

[0106] According to a development of the invention, it is provided that the method for electrically conductively contacting an optoelectronic component is used in a roll-to-roll process.

[0107] The object of the present invention is also achieved by providing an optoelectronic component, in particular a flexible optoelectronic component, which has at least one protective layer and has at least one busbar arranged below the at least one protective layer of the optoelectronic component, preferably produced according to the method according to the present invention, in particular according to one of the exemplary embodiments described above. In this case, the optoelectronic component has at least one electrically conductive contact, wherein the at least one electrically conductive contact electrically conductively contacts the at least one busbar with the flexible electrically conductive element via an electrically conductive connecting element, and wherein the optoelectronic component is preferably connected to a junction box. In this case, in particular, the advantages already described in conjunction with the method for electrically conductively contacting an optoelectronic component having at least one protective layer are provided to the optoelectronic component.

[0108] In a preferred embodiment, the conductive element is arranged directly on the at least one protective layer. In an alternative preferred embodiment, the conductive element is arranged on a connecting layer applied on the at least one protective layer.

[0109] In a preferred embodiment, at least one busbar is arranged on an electrode or a counter-electrode.In a preferred embodiment, at least one busbar is arranged on the side of the photovoltaic component, in particular the photovoltaic element, facing away from the sun as intended.

[0110] In a preferred embodiment, at least one busbar is arranged at least substantially over the width or length of the layer system which leads the two poles (including the negative pole and the positive pole) of the photovoltaic element to the junction point.

[0111] In a preferred embodiment, at least one busbar is applied directly to the electrode or the counter-electrode.In an alternative preferred embodiment, the conductive layer is arranged between at least one busbar and the electrode or the counter-electrode.

[0112] According to a development of the invention, it is provided that at least one connecting material, preferably an adhesive, is arranged between at least one protective layer and at least one busbar, wherein at least one opening is formed in the at least one protective layer and in the connecting material arranged on the at least one protective layer. In a preferred embodiment, the at least one connecting material is arranged over the entire extent of the at least one protective layer.

[0113] According to one development of the invention, it is provided that the flexible photovoltaic component is a flexible solar cell having an electrode, a counter-electrode and a layer system, the layer system having at least one photoactive layer, wherein the layer system is arranged between the two electrodes and wherein at least one busbar is at least partially conductively contacted at the electrode and / or the counter-electrode.

[0114] According to a development of the invention, it is provided that a first busbar is in conductive contact with at least one electrode and a second busbar is in conductive contact with at least one counter-electrode, wherein the first busbar leads to a first conductive element and the second busbar leads to a second conductive element, wherein, preferably, both conductive elements are conductively connected to a junction box.

[0115] In a preferred embodiment, the junction box is arranged on a region at a distance from the edge of the photovoltaic component. In an alternative preferred embodiment, the junction box is arranged on the edge of at least one protective layer and / or the encapsulation of the photovoltaic component.

[0116] In a preferred embodiment, the junction box is arranged on the front side of the solar cell, in particular on the region of the edge of the solar cell.In an alternative embodiment of the invention, the junction box is arranged on the front side of the solar cell, in particular on a region at a distance from the layer system of the photovoltaic component.

[0117] In a preferred embodiment, the junction box is arranged on the side of the solar cell as intended to face the sun. In an alternative preferred embodiment, the junction box is arranged on the side of the solar cell as intended to face away from the sun.

[0118] In a preferred embodiment, the conductive element conductively connects at least two busbars, preferably busbars of different cells, and guides these busbars to the junction box.

[0119] According to one development of the invention, it is provided that the junction box is arranged on the side of the photovoltaic component, preferably the solar cell, facing the sun, and the conductive element is arranged on the side of the photovoltaic component, preferably the solar cell, facing away from the sun as intended.

[0120] The present invention is explained in more detail below with reference to the accompanying drawings, in which:

[0121] Figure 1 A schematic diagram of an exemplary embodiment of a method for electrically conductively contacting an optoelectronic component having at least one protective layer is shown in the form of a flow chart;

[0122] Figure 2 A schematic diagram showing an exemplary embodiment of an optoelectronic component with conductive contacts having a protective layer in side view; and

[0123] Figure 3A and Figure 3B Schematic representations of two exemplary embodiments of optoelectronic components with electrically conductive contacts having a protective layer are shown in plan view.

[0124] Exemplary Embodiments

[0125] Figure 1 A schematic diagram of an exemplary embodiment of a method for conductively contacting a photovoltaic component 10 having at least one protective layer 7 is shown in the form of a flow chart. The photovoltaic component 10, in particular a photovoltaic element, comprises at least one electrode 6, a counter-electrode 5 and a layer system 4 having at least one photoactive layer, wherein the layer system 4 is arranged between the two electrodes 5, 6 and wherein at least one busbar 1 is conductively contacted at least partially at the electrode 6 and / or the counter-electrode 5.

[0126] The method for conductively contacting an optoelectronic component 10, in particular a flexible optoelectronic component 10, having at least one protective layer 7 comprises the following method steps: a) providing an optoelectronic component 10 having at least one protective layer 7, wherein the optoelectronic component 10 has at least one busbar 1 arranged below the at least one protective layer 7; b) forming at least one opening 8 in the at least one protective layer 7 by laser ablation using at least one laser beam, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein the at least one busbar 1 arranged below the at least one protective layer 7 is partially exposed, so that the at least one busbar 1 is not damaged; c) introducing a low-melting-point solder into the at least one opening 8 of the at least one protective layer 7, and aligning and fixing a flexible conductive element 2 on the side of the at least one opening 8 opposite to the at least one busbar 1; and d) forming a conductive connecting element 11 in the at least one opening 8 by induction welding with uniform heat input, so that the conductive element 2 and the at least one busbar 1 are conductively contacted via the at least one connecting element 11.

[0127] Thus, a simple and reliable conductive contact is ensured. In addition, damage to the sensitive layer system and / or the electrode is avoided. Advantageously, the busbars, in particular the busbars implemented as thin metal layers, and the conductive connecting material arranged between the electrode and / or the counterelectrode and at least one busbar are not damaged. Advantageously, the heat input is limited in time and in heat, so that damage to the adjacent layer system is avoided. Advantageously, a plurality of connecting elements, in particular a plurality of busbars, can be connected via conductive contact. Advantageously, the method can be implemented in a roll-to-roll method.

[0128] The parameters of the laser ablation, specifically the energy density, pulse duration, pulse shape, pulse frequency and / or wavelength of at least one laser beam, are set according to the material and layer thickness of at least one protective layer 7, so that the laser ablation of the protective layer 7 ensures the removal of the protective layer 7 so as to expose the busbar 1 without damaging at least one busbar and the layer system 4.

[0129] The parameters of the induction welding are set according to the material and dimensions of the connecting element 11 to be formed so that the induction welding ensures the formation of the connecting element 11 for electrically conductively contacting at least one busbar 1 and the conducting element 2 without damaging at least one busbar 1 and the layer system 4 in the process.

[0130] In one configuration of the invention, the electrode 6, the counter electrode 5 and the layer system 4 are laser structured so that the electrode 6 and / or the counter electrode 5 can be electrically conductively contacted with at least one busbar 1 in each case from the side of the photovoltaic component 10 facing away from the sun as intended or in each case from the side of the photovoltaic component facing the sun as intended. This achieves electrically conductive contacting of different potentials via at least one busbar 1 in a plane of the photovoltaic component 10, in particular a plane parallel to the extension direction of the layer system 4. In one configuration of the invention, two busbars 1 are arranged at the electrode 6 and / or the counter electrode 5.

[0131] In one configuration of the invention, after step d), at least one conductive element 2 is conductively connected to a junction box 3 , wherein the junction box 3 is arranged on the optoelectronic component 10 , preferably on an area at a distance from a corner of the optoelectronic component 10 .

[0132] In a further configuration of the invention, the laser medium of at least one laser beam in step b) is CO 2 .

[0133] In a further configuration of the invention, in step c), a solder preform is introduced into the at least one opening 8 .

[0134] In a further configuration of the invention, the cross-sectional area of ​​at least one opening 8 is 0.1 mm 2 Up to 75mm 2, preferably 1 mm 2 Up to 30mm 2 , wherein preferably, the contact area between the connecting element 11 and the at least one busbar 1 and / or the conductive element 2 is smaller than the area of ​​the at least one busbar 1 facing the connecting element 11 .

[0135] In a further configuration of the invention, the cross-sectional area of ​​the at least one opening corresponds to the cross-sectional area of ​​the connecting element.

[0136] In a further configuration of the invention, the low-melting-point solder used to form the connection element 11 is selected from the group consisting of bismuth, copper, silver and tin and alloys of at least one of these elements.

[0137] In a further configuration of the present invention, at least one connecting material 9, preferably an adhesive, is arranged between at least one protective layer 7 and at least one busbar 1, wherein, in step b), at least one opening 8 is formed in at least one protective layer 7 and in the connecting material 9 arranged on at least one protective layer 7. Figure 2 The connecting material 9 shown in FIG. 1 is embodied in another alternative manner.

[0138] In a further configuration of the invention, the conductive element 2 is embodied as a plate or strip, wherein the layer thickness of the plate or strip is preferably 10 μm to 100 μm, preferably 10 μm to 60 μm, or as a wire, wherein the cross-sectional area of ​​the wire is preferably 0.1 mm 2 Up to 2mm 2 , preferably 0.5 mm 2 Up to 1mm 2 .

[0139] In a further configuration of the invention, the at least one busbar 1 is embodied as a metal layer of at least one metal or an alloy thereof, preferably copper and tin, wherein the at least one busbar 1 and the conducting element 2 are preferably embodied from the same material.

[0140] In a further configuration of the invention, after step d), the electrically conductive element 2 is at least partially superficially coated with an insulating layer 13 .

[0141] In a further configuration of the present invention, for the purpose of conductively connecting the junction box 3 to the conductive element 2 of the photovoltaic component 10 having at least one protective layer 7 after step d), in step e), at least one connection opening is formed in the at least one protective layer 7 by laser ablation using at least one laser beam using the conductive element 2 obtained in step d), preferably from the side of the photovoltaic component 10 having at least one protective layer 7 as intended to face the sun, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein the conductive element 2 arranged behind the at least one protective layer 7 on the side as intended to face away from the sun is at least partially exposed, so that the conductive element 2 is not damaged.

[0142] In a further configuration of the present invention, in step f), solder is introduced into at least one connection opening of at least one protective layer 7 formed in step e), and the junction box 3 is aligned and fixed on the side of the at least one connection opening opposite to the conductive element 2, and in step g), a conductive connection element 12 is formed in the at least one connection opening by induction soldering, so that the conductive element 2 and the junction box 3 are conductively contacted via the at least one connection element 12.

[0143] In a further configuration of the invention, the method is used for electrically conductively contacting optoelectronic components 10 in a roll-to-roll process.

[0144] Figure 2 A schematic diagram of an exemplary embodiment of an optoelectronic component 10 with an electrically conductive contact having a protective layer 7 is shown in a side view. Identical and functionally identical elements are provided with the same reference numerals and reference is therefore made to the above description in this respect. The optoelectronic component 10, in particular a flexible optoelectronic component 10, has at least one protective layer 7 and at least one busbar 1 arranged below the at least one protective layer 7 of the optoelectronic component 10. Furthermore, the optoelectronic component 10 has at least one electrically conductive contact, in particular an electrically conductive contact produced according to the method for electrically conductively contacting an optoelectronic component 10 having at least one protective layer 7, wherein the at least one electrically conductive contact electrically conductively contacts the at least one busbar 1 with a flexible electrically conductive element 2 via an electrically conductive connecting element 11.

[0145] In one configuration of the invention, at least one electrically conductive element 2 is electrically conductively connected to a junction box 3 , wherein the junction box 3 is arranged on the optoelectronic component 10 .

[0146] In one configuration of the present invention, the junction box 3 is arranged at a region at a certain distance from a corner of the optoelectronic component 10 .

[0147] In a further configuration of the invention, at least one connecting material 9 , preferably an adhesive, is arranged between the at least one protective layer 7 and the at least one busbar 1 .

[0148] In a further configuration of the invention, a functional layer 14 , preferably a color layer, a filter layer and / or an adhesive layer, is at least partially arranged between the at least one protective layer 7 and the electrically conductive element 2 .

[0149] In a further configuration of the invention, the flexible photovoltaic component 10 is a flexible solar cell and comprises an electrode 6, a counter electrode 5 and a layer system 4, which has at least one photoactive layer, wherein the layer system 4 is arranged between the two electrodes 5, 6, and wherein at least one busbar 1 is at least partially in conductive contact at the electrode 6 and / or the counter electrode 5. The two electrodes 5, 6 and the layer system 4 arranged therebetween constitute the basic structure of the solar cell. The layer system 4 can be implemented in different ways, specifically can include different amounts of absorber materials and / or different amounts of photoactive layers. The production of the photovoltaic component 10, specifically a photovoltaic element having a layer system 4, can be carried out by evaporation in a vacuum with or without a carrier gas or, for example, by processing from a solution or suspension in the case of coating or printing. The individual layers can also be applied by sputtering. The layers are preferably produced by evaporating small molecules in a vacuum.

[0150] In a further configuration of the invention, the first busbar 1 is in conductive contact with at least one electrode 6 and the second busbar 15 is in conductive contact with at least one counter-electrode 5, wherein the first busbar 1 leads to a first conductive element 2 and the second busbar 15 leads to a second conductive element 16, and wherein preferably both conductive elements 2, 16 are conductively connected to the junction box 3.

[0151] In the present exemplary embodiment, the optoelectronic component 10 is a flexible optoelectronic component 10, in particular a flexible solar cell. The flexible solar cell is in particular an organic solar cell having at least one photoactive layer based on small molecules; however, the use of other flexible organic solar cells is also conceivable.

[0152] In a further configuration of the invention, the junction box 3 is arranged on the side of the photovoltaic component 10 , preferably a solar cell, intended to face the sun, and the conductive element 2 is arranged on the side of the photovoltaic component 10 , preferably a solar cell, intended to face away from the sun.

[0153] In a further configuration of the invention, a functional layer 14 , preferably a color layer, a filter layer and / or an adhesive layer, can be arranged at least partially between the at least one protective layer 7 and the electrically conductive element 2 .

[0154] Figure 3A and Figure 3B The schematic diagrams of two exemplary embodiments of optoelectronic components 10 with electrically conductive contacts are shown in plan view with a protective layer 7. Identical and functionally identical elements are provided with the same reference numerals and reference is therefore made to the above description in this respect.

[0155] In these exemplary embodiments, two busbars 1, 15 are arranged on an electrode 6 and / or a counter-electrode 5, wherein the first busbar 1 is assigned to a first potential and the second busbar 15 is assigned to a second potential. The electrode 6, the counter-electrode 5 and the layer system 4 are laser structured, wherein the electrode 6 and / or the counter-electrode 5 are in conductive contact with the busbars 1, 15 in each case from the side of the photovoltaic component 10 facing away from the sun as intended or in each case from the side of the photovoltaic component facing the sun as intended.

[0156] In the first exemplary embodiment ( Figure 3A ), there are two conductive contacts, which are produced according to the method of the invention for conductively contacting a photovoltaic component 10 having at least one protective layer 7 according to steps a) to d). In this case, the busbar 1 is conductively connected to the conductive element 2 via the connecting element 11 and the busbar 15 is conductively connected to the conductive element 16 via the connecting element 11. In one configuration of the invention, the conductive elements 2, 16 are at least partially coated with an insulating layer 13 on the surface. In addition, for the purpose of conductively connecting the junction box 3 to the conductive elements 2, 16, two connection openings are formed in the at least one protective layer 7 by laser ablation using at least one laser beam according to step e), preferably from the side of the photovoltaic component 10 having at least one protective layer that is intended to face the sun, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm. The conductive elements 2, 16 arranged on the side that is intended to face away from the sun behind the at least one protective layer 7 are thus partially exposed, so that the conductive elements 2, 16 are not damaged. In the two connection openings of the at least one protective layer 7, according to steps f) and g), conductive connection elements 12 are formed in the two connection openings, so that the conductive elements 2, 16 and the terminal box 3 are conductively contacted via the two connection elements 12. As shown in the plan view, the terminal box 3 is partially located behind the at least one protective layer 7.

[0157] In the second exemplary embodiment ( Figure 3B ), there are two conductive contacts, which are produced according to the method of the present invention for conductively contacting a photovoltaic component 10 having at least one protective layer 7 according to steps a) to d). In this case, the busbar 1 is conductively connected to the conductive element 2 via the connecting element 11 and the busbar 15 is conductively connected to the conductive element 16 via the connecting element 11. In one configuration of the present invention, the conductive elements 2, 16 are at least partially coated on the surface with an insulating layer 13. The conductive elements 2, 16 are implemented in the form of wires or narrow strips, are guided to the junction box 3 on the surface of the photovoltaic component 10 and are conductively connected to the junction box 3.

[0158] In one configuration of the invention, the conductive elements 2, 16 are at least partially coated on the surface with an insulating layer 13. The conductive elements 2, 16 are guided to the junction box 3 on the side of the photovoltaic component 10 facing away from the sun as intended. Alternatively, it is also conceivable that according to steps e) to g), the conductive elements 2, 16 are guided through the edge region of the at least one protective layer 7, in particular the region where no layer system 4 is arranged, to the side of the photovoltaic component 10 facing the sun as intended and / or are conductively connected there to the junction box 3. As shown in the plan view, the junction box 3 is partially located behind the at least one protective layer 7.

Claims

1. A method for electrically conductively contacting an optoelectronic component (10) having at least one protective layer (7), the method comprising the following method steps: a) providing the optoelectronic component (10) having the at least one protective layer (7), wherein: The photovoltaic component (10) has a first busbar (1) arranged below the at least one protective layer (7), b) forming at least one opening (8) in the at least one protective layer (7) by laser ablation using at least one laser beam on the side of the photovoltaic component (10) facing away from the sun as intended, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein the first busbar (1) arranged below the at least one protective layer (7) is partially exposed, so that the first busbar (1) is not damaged, c) introducing a low melting point solder into at least one opening (8) of the at least one protective layer (7), and aligning and fixing the flexible first conductive element (2) on the side of the at least one opening (8) opposite to the first busbar (1), and d) forming a first conductive connection element (11) in the at least one opening (8) by induction welding with uniform heat input, so that the flexible first conductive element (2) and the first busbar (1) are in conductive contact via the first conductive connection element (11), e) forming at least one connection opening in the at least one protective layer (7) from the side of the photovoltaic component (10) having the at least one protective layer (7) intended to face the sun by laser ablation, wherein the wavelength of the laser light is in the range of 8 μm to 12 μm, wherein the flexible first conductive element (2) arranged behind the at least one protective layer (7) on the side intended to face away from the sun is at least partially exposed, so that the flexible first conductive element (2) is not damaged, f) introducing solder into at least one connection opening of the at least one protective layer (7), and aligning and fixing a junction box (3) on the side of the at least one connection opening opposite to the flexible first conductive element (2), wherein the junction box (3) is arranged on the optoelectronic component (10), and g) forming a second conductive connection element (12) in the at least one connection opening by induction welding, so that the flexible first conductive element (2) and the junction box (3) are in conductive contact via the second conductive connection element (12).

2. The method of claim 1, wherein: The optoelectronic component (10) is a flexible optoelectronic component.

3. The method according to claim 1 or 2, wherein: The laser medium of the at least one laser beam in step b) is CO2.

4. The method according to claim 1 or 2, wherein: The cross-sectional area of ​​the at least one opening (8) is 0.1 mm 2 Up to 75mm 2 .

5. The method of claim 1, wherein: The contact area between the first conductive connection element (11) and the first busbar (1) and / or the flexible first conductive element (2) is smaller than the area of ​​the first busbar (1) facing the first conductive connection element (11).

6. The method according to claim 1 or 2, wherein: The low melting point solder used to form the first conductive connection element (11) is selected from the group consisting of bismuth, copper, silver and tin and alloys of at least one of these elements.

7. The method according to claim 1 or 2, wherein: At least one connecting material (9) is arranged between the at least one protective layer (7) and the first busbar (1), wherein, in step b), at least one opening (8) is formed in the at least one protective layer (7) and in the connecting material (9) arranged on the at least one protective layer (7).

8. The method according to claim 1 or 2, wherein: The flexible first conductive element (2) is implemented as a plate or a strip, or as a wire.

9. The method according to claim 1 or 2, wherein: The flexible first conductive element (2) is implemented as a plate or strip with a layer thickness of 10 μm to 100 μm, or as a cross-sectional area of ​​0.1 mm 2 Up to 2mm 2 of wire.

10. The method according to claim 1 or 2, wherein: The first busbar (1) is implemented as a metal layer composed of at least one metal or an alloy thereof.

11. The method according to claim 1 or 2, wherein: A method for electrically conductively contacting an optoelectronic component (10) is used in a roll-to-roll process.

12. A photovoltaic component (10) comprising at least one protective layer (7) and comprising a first busbar (1), the first busbar being arranged below the at least one protective layer (7) of the photovoltaic component (10), wherein: The photovoltaic component (10) has at least one electrically conductive contact produced according to the method as claimed in any one of claims 1 to 11, wherein the at least one electrically conductive contact electrically conductively contacts the first busbar (1) with the flexible first electrically conductive element (2) via a first electrically conductive connecting element (11), wherein a junction box (3) is arranged on the side of the photovoltaic component (10) facing the sun as intended, and the flexible first electrically conductive element (2) is arranged on the side of the photovoltaic component (10) facing away from the sun as intended, wherein the flexible first electrically conductive element (2) and the junction box (3) are electrically conductively contacted via a second electrically conductive connecting element (12).

13. The optoelectronic component (10) according to claim 12, wherein: At least one connecting material (9) is arranged between the at least one protective layer (7) and the first busbar (1).

14. The optoelectronic component (10) according to claim 12, wherein: The optoelectronic component (10) is a flexible optoelectronic component (10).

15. The optoelectronic component (10) according to claim 13 or 14, wherein: The flexible photovoltaic component (10) is a flexible solar cell having an electrode (6), a counter-electrode (5) and a layer system (4), the layer system having at least one photoactive layer, wherein the layer system (4) is arranged between the two electrodes (5, 6) and wherein the first busbar (1) is at least partially in conductive contact with the electrode (6) and / or the counter-electrode (5).

16. The optoelectronic component (10) according to claim 13 or 14, wherein: The first busbar (1) is in conductive contact with at least one electrode (6) and the second busbar (15) is in conductive contact with at least one counter-electrode (5), wherein the first busbar (1) leads to the flexible first conductive element (2) and the second busbar (15) leads to the flexible second conductive element (16).

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