Refrigeration film and preparation method

Abstract

The present invention discloses a refrigeration film and a preparation method thereof. A first semiconductor and an adjacent second semiconductor can form a thermoelectric component. A first electrode of a power supply, a first conductive layer, a thermoelectric component, a second conductive layer, and a second electrode of the power supply form a conductive structure. Different thermoelectric components can be electrically connected in parallel. After the refrigeration film is cut, even if the conductive structure of a thermoelectric component is broken, other thermoelectric components that have not been cut can still form a conductive loop to achieve its cooling and heating effects without affecting the performance of the remaining refrigeration film.

Description

Technical Field

[0001] The present invention relates to the technical field of refrigeration films, and in particular to a refrigeration film and a preparation method thereof. Background Art

[0002] In semiconductor technology, cooling films typically use TEC (semiconductor refrigeration) technology; TEC is made using the Peltier effect of semiconductor materials; the Peltier effect refers to the phenomenon that when a direct current passes through a galvanic couple composed of two semiconductor materials, one end absorbs heat and the other end releases heat.

[0003] In related technologies, heavily doped N-type and P-type bismuth telluride are generally used as semiconductor materials for TEC. The semiconductor refrigeration film includes multiple P semiconductors and N semiconductors, and the multiple P semiconductors and multiple N semiconductors are connected in series at intervals. When current flows through the TEC, the adjacent ends of the P semiconductor and the N semiconductor absorb heat to form a cold end, and the distant ends release heat to form a hot end. Since the P / N semiconductors are in a series structure, disconnecting any position will cause the circuit to be disconnected. Disconnecting any position after the finished product is manufactured will cause the entire structure to be short-circuited. Therefore, the size of the refrigeration film cannot be changed by cutting.

[0004] Therefore, how to cut the refrigeration film without affecting the performance of the remaining refrigeration film has become a problem that urgently needs to be improved in the existing technology. Summary of the Invention

[0005] The present application aims to provide a refrigeration film and a preparation method thereof, so as to solve the problem of how to cut the refrigeration film without affecting the performance of the remaining refrigeration film.

[0006] The solution adopted by this application to solve the above technical problems is:

[0007] In a first aspect, the present application provides a refrigeration film, comprising:

[0008] a first conductive layer, configured to be electrically connected to a first electrode of a power source;

[0009] a second conductive layer, insulated and disposed on the first conductive layer, the second conductive layer being electrically connected to the second electrode of the power supply, the second conductive layer being provided with a plurality of first through holes spaced apart from each other, the first through holes being connected to the first conductive layer;

[0010] A plurality of second semiconductors are disposed on the second conductive layer, and a first semiconductor is disposed at positions on the first conductive layer that are connected to the first through hole. The first semiconductor is electrically connected to an adjacent second semiconductor through the first through hole.

[0011] In some embodiments of the present application, a plurality of the first through holes are arranged in multiple columns, and the second semiconductor is arranged between two adjacent columns of the first through holes.

[0012] In some embodiments of the present application, the refrigeration film further includes a third conductive layer provided on the first semiconductor and the second semiconductor, and a plurality of independent third conductive portions are provided on the third conductive layer, each third conductive portion being electrically connected to the first semiconductor and the adjacent second semiconductor.

[0013] In some embodiments of the present application, the first conductive layer includes a plurality of first conductive parts electrically connected to each other, and the first conductive parts are electrically connected to the first semiconductors in a one-to-one correspondence; and / or the second conductive layer includes a plurality of second conductive parts electrically connected to each other, and the second conductive parts are electrically connected to the second semiconductors in a one-to-one correspondence.

[0014] In some embodiments of the present application, the first conductive layer includes a first substrate on which a plurality of first conductive portions are disposed, and the second conductive layer includes a second substrate disposed on the first conductive portions.

[0015] In some embodiments of the present application, the first semiconductor includes one of a P-type semiconductor and an N-type semiconductor, and the second semiconductor includes the other of an N-type semiconductor and a P-type semiconductor.

[0016] In some embodiments of the present application, the first conductive layer, the second conductive layer and the third conductive layer are all made of flexible materials.

[0017] In some embodiments of the present application, a first spacer is provided between the first semiconductor and the second semiconductor. When the cooling film is in a bent state, the first spacer is used to prevent the first semiconductor and the second semiconductor from contacting each other.

[0018] In some embodiments of the present application, the first electrode is the positive electrode of the power supply, and the second electrode is the negative electrode of the power supply; or the first electrode is the negative electrode of the power supply, and the second electrode is the positive electrode of the power supply.

[0019] In a second aspect, the present application further provides a method for preparing a refrigeration film, comprising the following steps:

[0020] Providing a first conductive layer, and setting the first conductive layer to be electrically connected to a first electrode of a power supply;

[0021] A second conductive layer is insulated and provided on the first conductive layer, the second conductive layer is electrically connected to the second electrode of the power supply, and a plurality of first through holes are spaced apart on the second conductive layer, the first through holes are connected to the first conductive layer;

[0022] A plurality of second semiconductors are provided on the second conductive layer, and first semiconductors are provided at positions on the first conductive layer connected to the first through-holes. The first semiconductor is electrically connected to an adjacent second semiconductor through the first through-holes.

[0023] The cooling film and preparation method provided in the present application are characterized in that a first semiconductor and an adjacent second semiconductor can form a thermoelectric component, and a first electrode of a power supply, a first conductive layer, a thermoelectric component, a second conductive layer, and a second electrode of the power supply form a conductive structure. Different thermoelectric components can be electrically connected in parallel. After the cooling film is cut, even if the conductive structure of a thermoelectric component is broken, the other thermoelectric components that have not been cut can still form a conductive circuit to achieve their cooling and heating effects without affecting the performance of the remaining cooling film. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 This is a first three-dimensional structural diagram of the refrigeration film of the present invention;

[0026] Figure 2 For the present invention Figure 1 A magnified view of the local area A;

[0027] Figure 3 This is a second three-dimensional structural diagram of the refrigeration film of the present invention;

[0028] Figure 4 is a transverse cross-sectional view of the refrigeration film of the present invention;

[0029] Figure 5 is a longitudinal cross-sectional view of the refrigeration film of the present invention;

[0030] Figure 6 For the present invention Figure 5 A magnified view of the local area B;

[0031] Figure 7 is a schematic transverse cross-sectional view of the refrigeration film of the present invention;

[0032] Figure 8 This is a three-dimensional diagram of the refrigeration film of the present invention in a folded state;

[0033] Figure 9 This is a side view of the refrigeration film of the present invention in a folded state.

[0034] Element symbol description:

[0035] 1-first conductive layer, 2-second conductive layer, 3-third conductive layer, 4-first semiconductor, 5-second semiconductor, 11-first substrate, 12-first conductive portion, 21-second substrate, 22-second conductive portion, 23-first through hole, 31-third substrate, 32-third conductive portion. DETAILED DESCRIPTION

[0036] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present invention.

[0037] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0038] In this application, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described in this application as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is given to enable any person skilled in the art to implement and use the invention. In the following description, details are listed for the purpose of explanation. It should be understood that one of ordinary skill in the art will recognize that the invention can be implemented without these specific details. In other instances, known structures and processes are not described in detail to avoid obscuring the description of the invention with unnecessary detail. Therefore, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles disclosed herein.

[0039] See also Figures 1 to 9The main body of this embodiment is a refrigeration film, including: a first conductive layer 1, which is used to electrically connect to a first electrode of a power supply; a second conductive layer 2, which is insulated and arranged on the first conductive layer 1, and the second conductive layer 2 is electrically connected to the second electrode of the power supply, and a plurality of first through-holes 23 are arranged at intervals on the second conductive layer 2, and the first through-holes 23 are connected to the first conductive layer 1; a plurality of second semiconductors 5 are arranged on the second conductive layer 2, and a first semiconductor 4 is arranged at a position on the first conductive layer 1 that is connected to the first through-holes 23, and the first semiconductor 4 passes through the first through-hole 23 to be electrically connected to an adjacent second semiconductor 5.

[0040] The first semiconductor 4 and the adjacent second semiconductor 5 can form a thermoelectric component. The first electrode of the power supply, the first conductive layer 1, the thermoelectric component, the second conductive layer 2 and the second electrode of the power supply form a conductive structure. Different thermoelectric components can be electrically connected in parallel. After the cooling film is cut, even if the conductive structure of a thermoelectric component is broken, the other thermoelectric components that have not been cut can still form a conductive loop to achieve their cooling and heating effects without affecting the performance of the remaining cooling film.

[0041] In some embodiments of the present application, multiple first through-holes 23 are arranged in multiple rows, and the second semiconductor 5 is disposed between two adjacent rows of first through-holes 23. This allows the thermoelectric components to be arranged in a regular pattern, simplifying the cutting path. In this embodiment, cutting can be performed along the arrangement direction of the first through-holes 23 to preserve as many thermoelectric components as possible. However, cutting is not limited to a regular pattern and can also be performed freely. However, this may result in some thermoelectric components being cut off, resulting in some thermoelectric components not being able to cool or heat normally.

[0042] In some embodiments of the present application, the first semiconductor 4 is arranged on a side of the first conductive layer 1 close to the second conductive layer 2, the second semiconductor 5 is arranged on a side of the second conductive layer 2 away from the first conductive layer 1, and the first semiconductor 4 passes through the second conductive layer 2.

[0043] In some embodiments of the present application, the refrigeration film also includes a third conductive layer 3 arranged on the first semiconductor 4 and the second semiconductor 5, and a plurality of independent third conductive parts 32 are provided on the third conductive layer 3, and each third conductive part 32 is electrically connected to the first semiconductor 4 and the adjacent second semiconductor 5.

[0044] In some embodiments of the present application, a third conductive layer 3 is further included, a first connection end is provided at one end of the first semiconductor 4 away from the first conductive layer 1, a second connection end is provided at one end of the second semiconductor 5 away from the second conductive layer 2, and the third conductive layer 3 is provided on the first connection end and the second connection end.

[0045] In some embodiments of the present application, a plurality of third conductive portions are provided on a side of the third conductive layer 3 close to the second conductive layer 2 , and each third conductive portion is electrically connected to a first connection end and a second connection end.

[0046] In some embodiments of the present application, the first conductive layer 1 includes a first substrate 11 on which a plurality of first conductive portions 12 are provided, and the second conductive layer 2 includes a second substrate 21 which is provided on the first conductive portions 12 .

[0047] In some embodiments, the first conductive layer 1 includes a first substrate 11 and a first conductive portion 12. The first substrate 11 can be made of a thermally conductive material to perform a thermal conductive function. The first conductive portion 12 can be a copper-clad film to perform a conductive function. The first conductive portion 12 electrically connects multiple first semiconductors 4 and the first electrode of the power supply. Even if part of the first semiconductor 4 is cut off, it does not affect the electrical connection between the remaining first semiconductors 4 and the first electrode of the power supply.

[0048] In some embodiments of the present application, a first through hole 23 is provided on the second conductive layer 2, and the first through hole 23 is used for allowing the first semiconductor 4 to pass through; the number of the first through holes 23 is multiple, corresponding to the number of the first semiconductors 4, and the first through holes 23 can be circular or square, or even other special-shaped structures, as long as they can allow the first semiconductor 4 to pass through.

[0049] In some embodiments, the second conductive layer 2 includes a second substrate 21 and a second conductive portion 22. The second substrate 21 can be made of a thermally conductive material to perform a thermal conductive role; the second conductive portion 22 can be a copper film to perform a conductive role; the second conductive portion 22 electrically connects multiple second semiconductors 5 and the second electrode of the power supply. Even if part of the second semiconductor 5 is cut off, it still does not affect the electrical connection between the remaining second semiconductors 5 and the second electrode of the power supply.

[0050] In some embodiments, the third conductive layer 3 includes a third substrate and a third conductive part. The third substrate 31 can be made of a thermally conductive material to perform a thermal conductive role; the third conductive part 32 can be a copper film to perform a conductive role; the third conductive part 32 electrically connects multiple second semiconductors 5 and the first semiconductor 4. Even if part of the second semiconductors 5 and the first semiconductors 4 are cut off, it still does not affect the electrical connection between the remaining second semiconductors 5 and the corresponding first semiconductors 4.

[0051] In some embodiments of the present application, the third conductive layer 3 is connected to the first connection end of the first semiconductor 4, where the first connection end is the end of the first semiconductor 4 away from the first conductive layer 1. The third conductive layer 3 can be parallel to the second conductive layer 2, or can have an inclined structure, or even a special-shaped curved surface or a special-shaped connecting line. It can be understood that the third conductive layer 3 is configured to electrically connect the first semiconductor 4 and the second semiconductor 5. In some embodiments, the third conductive layer 3 can be filled between adjacent first semiconductors 4 and second semiconductors 5, or can overlap the first semiconductor 4 and second semiconductor 5. In some embodiments, the third conductive layer 3 and the second conductive layer 2 do not form ohmic contact, preventing circuit short circuits.

[0052] In some embodiments of the present application, the third conductive layer 3 is connected to the second connection end of the second semiconductor 5, where the second connection end is the end of the second semiconductor 5 away from the second conductive layer 2. In some embodiments, one end of the third conductive layer 3 is disposed on the first connection end and the other end is disposed on the second connection end, thereby maximizing the effective area of ​​the first semiconductor 4 and the second semiconductor 5.

[0053] In some embodiments of the present application, the first semiconductor 4 and the second semiconductor 5 are arranged in an intersecting manner, and the first connection end is electrically connected to the adjacent second connection end. The first semiconductor 4 and an adjacent second semiconductor 5 form a single thermoelectric assembly, thereby generating multiple relatively independent thermoelectric assemblies. Even if part of the thermoelectric assembly is cut away, the operation of the remaining thermoelectric assemblies will not be affected, achieving a free-cutting effect.

[0054] In some embodiments of the present application, the first conductive layer 1 includes a plurality of first conductive portions 12 electrically connected to each other, and the first conductive portions 12 are electrically connected to the first semiconductors 4 in a one-to-one correspondence; and / or the second conductive layer 2 includes a plurality of second conductive portions 22 electrically connected to each other, and the second conductive portions 22 are electrically connected to the second semiconductors 5 in a one-to-one correspondence.

[0055] In some embodiments of the present application, corresponding to the provision of a separate thermoelectric assembly, the first conductive layer 1 includes a plurality of first conductive portions electrically connected to each other, and the first conductive portions are electrically connected one-to-one with the first semiconductors 4. The first conductive portions can be configured as conductive film structures. Since the first conductive layer 1 only needs to energize the first semiconductors 4, the first conductive portions can be arranged only in the area where the first semiconductors 4 are provided. The different first conductive portions can be connected to each other via wires or through other electrical connection structures.

[0056] In some embodiments of the present application, corresponding to the provision of a separate thermoelectric assembly, the second conductive layer 2 includes a plurality of second conductive portions electrically connected to each other, and the second conductive portions are electrically connected to the second semiconductors 5 in a one-to-one correspondence. The second conductive portions can be configured as conductive film structures. Since the second conductive layer 2 only needs to energize the second semiconductors 5, the second conductive portions can be arranged only in the area where the second semiconductors 5 are provided. Different second conductive portions can be connected to each other via wires or through other electrical connection structures.

[0057] In some embodiments of the present application, corresponding to the provision of a separate thermoelectric assembly, the third conductive layer 3 includes multiple third conductive portions, and each group of adjacent first semiconductors 4 and second semiconductors 5 is electrically connected via a third conductive portion. The third conductive portion can be configured as a conductive film structure, and the third conductive layer 3 serves to connect the first semiconductors 4 and second semiconductors 5. Therefore, separate first conductive portions can be provided only in the region between the first semiconductors 4 and second semiconductors 5, and different first conductive portions can be connected via wires or other electrical connection structures.

[0058] In some embodiments, a single power supply can be configured to directly electrically connect multiple first conductive parts simultaneously, or multiple power supplies can be configured to connect different first conductive parts. Similarly, a single power supply can be configured to directly electrically connect multiple second conductive parts simultaneously, or multiple power supplies can be configured to connect different second conductive parts. The power supplies need to be connected to the corresponding first conductive parts and second conductive parts, forming an independent and complete circuit at each first conductive part and second conductive part position. This improves mutual anti-interference performance and facilitates free cutting.

[0059] In some embodiments, the first conductive layer 1 can be set on the second conductive layer 2, or the second conductive layer 2 can be set on the first conductive layer 1, which does not affect the realization of the overall structural function; it is only necessary to set corresponding through holes on the upper first conductive layer 1 or the second conductive layer 2, and the through holes can expose the bottom second conductive layer 2 or the first conductive layer 1, thereby facilitating the completion of the overall electrical connection structure.

[0060] In some embodiments, each thermoelectric component can be distributed in a dot matrix, a linear array, or a block distribution; in the dot matrix distribution, an independent thermoelectric component is formed at each point, and cutting off any thermoelectric component will not affect the normal operation of the remaining thermoelectric components; in the linear array distribution, the first conductive layer 1 and the second conductive layer 2 are a plurality of spaced line structures, and the first conductive layer 1 and the second conductive layer 2 are staggered. Two adjacent lines form a cooling film module, and a cooling film module can include multiple thermoelectric components. When cutting, it can only be cut along the length direction of the line. Although this reduces the degree of freedom of free cutting, it has a better effect than the inability to cut in the prior art. In the block distribution, it can be understood that any closed figure on the plane can form a cooling film module, which can be a triangular structure, a quadrilateral structure, or a circular structure. Similarly, when cutting, it can only be cut along the contour line of the closed figure, which is also better than the prior art.

[0061] Current TEC coolers are generally packaged as ceramic devices of fixed size, and their structure limits their flexibility, making them inapplicable to places where they need to be able to adhere closely to non-planar or flexible surfaces. In some embodiments of the present application, the first conductive layer 1, the second conductive layer 2, and the third conductive layer 3 are all made of flexible materials. This allows the cooling film of this embodiment to have a bending state, allowing it to be directly adhered to non-planar or flexible surfaces; in particular, it can be used in the fields of electrically temperature-controlled clothing, temperature-controlled curtain walls, ceilings and floors, low-temperature insulation bags, etc. In some embodiments, a gap is provided between two adjacent first semiconductors 4 and second semiconductors 5 to reduce the mutual interference between the cooling or heating of the two; at the same time, it can also reduce the force applied during bending, making it easier to bend the overall structure.

[0062] In some embodiments of the present application, a first gap is provided between the first semiconductor 4 and the second semiconductor 5 . When the cooling film is in a bent state, the first gap is used to prevent the first semiconductor 4 and the second semiconductor 5 from contacting each other.

[0063] In some embodiments of the present application, the first semiconductor 4 includes one of a P-type semiconductor and an N-type semiconductor, and the second semiconductor 5 includes the other of the N-type semiconductor and the P-type semiconductor. Specifically, the N-type semiconductor can be heavily doped N-type bismuth telluride, and the P-type semiconductor can be heavily doped P-type bismuth telluride. The connection end of the N-type semiconductor and the P-type semiconductor is the first side, which can be used for heating or cooling, and can achieve cooling or heating conversion by connecting the power supply in the forward and reverse directions.

[0064] In some embodiments of the present application, the first electrode is the positive electrode of the power supply, and the second electrode is the negative electrode of the power supply; or the first electrode is the negative electrode of the power supply, and the second electrode is the positive electrode of the power supply. The heating and cooling surfaces of the cooling film are switched by adjusting the polarity of the first and second electrodes.

[0065] In some embodiments, the first semiconductor 4 is set to be a P-type semiconductor, the second semiconductor 5 is set to be an N-type semiconductor, the first electrode is a positive electrode, and the second electrode is a negative electrode. The current flows through the first conductive layer 1, the first semiconductor 4, the third conductive layer 3, the second semiconductor 5 and the second conductive layer 2. At this time, the first semiconductor 4 and the second semiconductor 5 absorb heat on the side away from the first semiconductor 4 layer for cooling, and release heat on the side close to the first semiconductor 4 layer for heating.

[0066] In some embodiments, the first semiconductor 4 is set to be a P-type semiconductor, the second semiconductor 5 is set to be an N-type semiconductor, the first electrode is a negative electrode, the second electrode is a positive electrode, and the current flows through the second conductive layer 2, the second semiconductor 5, the third conductive layer 3, the first semiconductor 4 and the first conductive layer 1. At this time, the first semiconductor 4 and the second semiconductor 5 release heat on the side away from the first semiconductor 4 layer for heating, and absorb heat on the side close to the first semiconductor 4 layer for cooling.

[0067] In some embodiments, the first semiconductor 4 is set to be an N-type semiconductor, the second semiconductor 5 is set to be a P-type semiconductor, the first electrode is a positive electrode, and the second electrode is a negative electrode. The current flows through the first conductive layer 1, the first semiconductor 4, the third conductive layer 3, the second semiconductor 5 and the second conductive layer 2. At this time, the first semiconductor 4 and the second semiconductor 5 release heat on the side away from the first semiconductor 4 layer for heating, and absorb heat on the side close to the first semiconductor 4 layer for cooling.

[0068] In some embodiments, the first semiconductor 4 is set to be an N-type semiconductor, the second semiconductor 5 is set to be a P-type semiconductor, the first electrode is the positive electrode, the second electrode is the negative electrode, and the current flows through the second conductive layer 2, the second semiconductor 5, the third conductive layer 3, the first semiconductor 4 and the first conductive layer 1. At this time, the first semiconductor 4 and the second semiconductor 5 absorb heat on the side away from the first semiconductor 4 layer for cooling, and release heat on the side close to the first semiconductor 4 layer for heating.

[0069] In some embodiments of the present application, the cooling film includes a multi-layer flexible circuit layer structure and a layer of N / P-type semiconductor layer. The first flexible circuit layer is composed of a flexible substrate laminated with a copper-clad film, and a layer of N-type semiconductor is regularly arranged thereon; the second flexible circuit layer is arranged on the first flexible circuit layer, and the second flexible circuit layer is provided with regular vias for the first layer of N-type semiconductor to pass through, and a regular P-type semiconductor is arranged on the second flexible circuit layer. The N-type semiconductor and the P-type semiconductor are located on the same plane, and a third flexible circuit layer is arranged above them. The third flexible circuit layer can connect two adjacent N-type semiconductors and P-type semiconductors to form a first loop.

[0070] During operation, the first layer of the flexible circuit board can be connected to positive direct current, and the second layer of the flexible circuit board can be connected to negative direct current. According to the Peltier effect, the current flowing through the junction interface of the two different conductors will produce heat absorption and heat release phenomena; each N / P pair of the refrigerator absorbs heat at the junction surface of the third connecting layer, and releases heat at the junction surface of the first and second conductive layers. The third layer of the circuit board composed of multiple N / P pairs absorbs heat to reduce the temperature, and releases heat on the first and second layers to increase the temperature, forming a cooling film with different temperature effects on both sides.

[0071] The main body of this embodiment is

[0072] A method for preparing a refrigeration film comprises the following steps:

[0073] Providing a first conductive layer 1, and setting the first conductive layer 1 to be electrically connected to a first electrode of a power supply;

[0074] A second conductive layer 2 is insulated and provided on the first conductive layer 1, and the second conductive layer 2 is electrically connected to the second electrode of the power supply. A plurality of first through holes 23 are spaced apart on the second conductive layer 2, and the first through holes 23 are connected to the first conductive layer 1;

[0075] A plurality of second semiconductors 5 are provided on the second conductive layer 2 . First semiconductors 4 are provided at positions connected to the first through-holes 23 on the first conductive layer 1 . The first semiconductors 4 pass through the first through-holes 23 and are electrically connected to adjacent second semiconductors 5 .

[0076] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, please refer to the detailed description of other embodiments above and will not be repeated here.

[0077] The basic concepts have been described above. It will be apparent to those skilled in the art that the detailed disclosure above is merely illustrative and does not limit the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and amendments to the present application. Such modifications, improvements, and amendments are suggested in the present application and remain within the spirit and scope of the exemplary embodiments of the present application.

[0078] At the same time, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application may be appropriately combined.

[0079] Similarly, it should be noted that, in order to simplify the presentation of this application and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this application sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of this application requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single embodiment disclosed above.

[0080] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0081] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, and documents, cited in this application is hereby incorporated by reference in its entirety, except for any application history that is inconsistent with or conflicts with this application, and any document (currently or subsequently appended to this application) that limits the broadest scope of the claims of this application. It should be noted that if the descriptions, definitions, and / or terminology used in the accompanying materials are inconsistent with or conflict with the content of this application, the descriptions, definitions, and / or terminology used in this application will control.

[0082] The above is a detailed introduction to the technical solutions provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core ideas. At the same time, for those skilled in the art, according to the ideas of the present invention, there may be changes in the specific implementation methods and application scopes. In summary, the contents of this specification should not be understood as limiting the present invention.

Claims

1. A refrigeration film, characterized in that: include: a first conductive layer, configured to be electrically connected to a first electrode of a power source; a second conductive layer, insulated and disposed on the first conductive layer, the second conductive layer being electrically connected to the second electrode of the power supply, the second conductive layer being provided with a plurality of first through holes spaced apart from each other, the first through holes being connected to the first conductive layer; A plurality of second semiconductors are provided on the second conductive layer, and a first semiconductor is provided at each position on the first conductive layer that is connected to the first through hole, and the first semiconductor is electrically connected to an adjacent second semiconductor through the first through hole; The cooling film further includes a third conductive layer provided on the first semiconductor and the second semiconductor. The third conductive layer is provided with a plurality of mutually independent third conductive portions, and each third conductive portion is electrically connected to the first semiconductor and the adjacent second semiconductor.

2. The refrigeration film according to claim 1, characterized in that The first through holes are arranged in multiple columns, and the second semiconductor is arranged between two adjacent columns of the first through holes.

3. The refrigeration film according to claim 1, characterized in that The first conductive layer includes a plurality of first conductive parts electrically connected to each other, and the first conductive parts are electrically connected to the first semiconductors in a one-to-one correspondence; and / or the second conductive layer includes a plurality of second conductive parts electrically connected to each other, and the second conductive parts are electrically connected to the second semiconductors in a one-to-one correspondence.

4. The refrigeration film according to claim 3, characterized in that: The first conductive layer includes a first substrate on which a plurality of first conductive parts are arranged. The second conductive layer includes a second substrate on which the second substrate is arranged on the first conductive parts.

5. The refrigeration film according to claim 1, characterized in that: The first semiconductor includes one of a P-type semiconductor and an N-type semiconductor, and the second semiconductor includes the other of an N-type semiconductor and a P-type semiconductor.

6. The refrigeration film according to claim 1, characterized in that The first conductive layer, the second conductive layer and the third conductive layer are all made of flexible materials.

7. The refrigeration film according to claim 6, characterized in that A first gap is provided between the first semiconductor and the second semiconductor. When the cooling film is in a bent state, the first gap is used to prevent the first semiconductor and the second semiconductor from contacting each other.

8. The refrigeration film according to claim 1, characterized in that The first electrode is the positive electrode of the power supply, and the second electrode is the negative electrode of the power supply; or the first electrode is the negative electrode of the power supply, and the second electrode is the positive electrode of the power supply.

9. A method for preparing a refrigeration film, characterized in that: The following steps are involved: Providing a first conductive layer, and setting the first conductive layer to be electrically connected to a first electrode of a power supply; A second conductive layer is insulated and provided on the first conductive layer, the second conductive layer is electrically connected to the second electrode of the power supply, and a plurality of first through holes are spaced apart on the second conductive layer, the first through holes are connected to the first conductive layer; A plurality of second semiconductors are provided on the second conductive layer, and a first semiconductor is provided at each position on the first conductive layer connected to the first through hole, wherein the first semiconductor is electrically connected to an adjacent second semiconductor through the first through hole; A third conductive layer is provided on the first semiconductor and the second semiconductor. A plurality of mutually independent third conductive portions are provided on the third conductive layer. Each third conductive portion is electrically connected to the first semiconductor and the adjacent second semiconductor.

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