Dual sensing device

Abstract

A dual sensing device includes a first substrate, a first sensing element layer, a second substrate, and a second sensing element layer. The first sensing element layer is located on the first substrate and includes a plurality of first sensing elements. The second substrate is located on the first sensing element layer. The second sensing element layer is located on a side of the second substrate close to the first sensing element layer and includes a plurality of second sensing elements.

Description

Technical Field

[0001] The present invention relates to a sensing device, and in particular to a dual sensing device. Background Art

[0002] In order to provide the information needed to build a smart living environment, sensing technology has been widely used in various electronic devices. For example, portable devices such as mobile phones and smart watches use various optical sensors to sense biometric features, such as fingerprints, vein images, heart rate, blood oxygen concentration, etc., which can not only protect personal data security, but also support applications such as personal health management and mobile payment, while also increasing the added value of electronic devices.

[0003] However, the structures of different sensors are not the same, which makes it difficult to integrate them into the structure of electronic devices. In addition, when applied to display devices, more sensors will occupy more display area, resulting in a decrease in the aperture ratio of the display device. Summary of the invention

[0004] An object of the present invention is to provide a dual sensing device with a simplified integrated structure.

[0005] One embodiment of the present invention provides a dual sensing device, comprising: a first substrate; a first sensing element layer located on the first substrate and comprising a plurality of first sensing elements; a second substrate located on the first sensing element layer; and a second sensing element layer located on a side of the second substrate close to the first sensing element layer and comprising a plurality of second sensing elements.

[0006] In one embodiment of the present invention, the first sensing element is a visible light sensing element.

[0007] In one embodiment of the present invention, the first sensing element is a fingerprint sensing element.

[0008] In one embodiment of the present invention, the second sensing element is an infrared light sensing element.

[0009] In one embodiment of the present invention, the second sensing element is a fingerprint sensing element or a living anti-counterfeiting sensing element.

[0010] In one embodiment of the present invention, the second sensing element is an organic photodiode.

[0011] In one embodiment of the present invention, the organic photodiode comprises an electron transport layer, a hole transport layer and a photosensitive layer located between the electron transport layer and the hole transport layer, and the electron transport layer is located between the photosensitive layer and the second substrate.

[0012] In one embodiment of the present invention, the orthographic projection of the second sensing element on the first substrate is outside the orthographic projection of the first sensing element on the first substrate.

[0013] In one embodiment of the present invention, the dual sensing device further includes a plurality of spacers located between the first sensing element layer and the second sensing element layer.

[0014] In an embodiment of the present invention, the dual sensing device further includes a first switch element located on the first substrate and electrically connected to the first sensing element.

[0015] In an embodiment of the present invention, the first switch element is further electrically connected to the second sensing element.

[0016] In one embodiment of the present invention, the dual sensing device further includes a second switch element located on the second substrate and electrically connected to the second sensing element.

[0017] In one embodiment of the present invention, the dual sensing device further includes a first alignment structure located on the first sensing element.

[0018] In one embodiment of the present invention, the dual sensing device further comprises a second collimating structure located on a side of the second sensing element layer close to the first sensing element layer, and an orthographic projection of the second collimating structure on the first substrate overlaps an orthographic projection of the first collimating structure on the first substrate.

[0019] In one embodiment of the present invention, the dual sensing device further includes a light source located on a side of the second substrate opposite to the second sensing element layer.

[0020] The beneficial effect of the present invention is that the first sensing element and the second sensing element of the dual sensing device of the present invention are respectively disposed on the first substrate and the second substrate, which not only simplifies the integrated structure and corresponding process of the dual sensing device, but also does not affect the aperture ratio of the display device when applied to the display device.

[0021] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1A FIG. 4 is a schematic top view of a dual sensing device according to an embodiment of the present invention.

[0023] Figure 1B is along Figure 1A A schematic cross-sectional view taken along the section line AA'.

[0024] Figure 1C is along Figure 1A A schematic cross-sectional view taken along section line BB'.

[0025] Figure 2 FIG. 4 is a cross-sectional diagram of a dual sensing device according to an embodiment of the present invention.

[0026] Figure 3 FIG. 4 is a cross-sectional diagram of a dual sensing device according to an embodiment of the present invention.

[0027] The reference numerals are as follows:

[0028] 10, 20, 30: Dual sensing device

[0029] 110: First substrate

[0030] 120: Second substrate

[0031] 130: First sensing element layer

[0032] 140: Second sensing element layer

[0033] A-A', B-B': hatching line

[0034] BM1, BM2, BM3: light shielding layer

[0035] CF: Flip Chip Film

[0036] CH1, CH2: Semiconductor layer

[0037] CL: Collimation Layer

[0038] DE1, DE2: drain

[0039] DL1, DL2: driving circuit layer

[0040] E11, E12, E21, E22: Electrodes

[0041] ET: Electron Transport Layer

[0042] F1: Lower surface

[0043] F2: Top surface

[0044] GE1, GE2: Gate

[0045] GP: Gap

[0046] H1, H2: Conductive adhesive

[0047] HT: Hole transport layer

[0048] I1, I5: Buffer layer

[0049] I2, I6: Gate insulation layer

[0050] I3, I7: interlayer insulation layer

[0051] I4: Insulation layer

[0052] LS: Light Source

[0053] ML1, ML2: Collimation structure

[0054] PL1~PL9: Flat layer

[0055] PS: Interstitial

[0056] PT: Photosensitive layer

[0057] RC: infrared light shielding layer

[0058] S1: First sensing element

[0059] S2: Second sensing element

[0060] SE1, SE2: Source

[0061] SL: Signal line

[0062] SR: Sensing layer

[0063] ST: Concave

[0064] SU: Sensing Unit

[0065] T1: First switching element

[0066] T2: Second switching element

[0067] TH: Hole

[0068] V1, V2, V3: Through hole

[0069] VA1, VA2: Through hole DETAILED DESCRIPTION

[0070] In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" can be other elements between two elements.

[0071] It should be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, regions, layers and / or parts in this article, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first "element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this article.

[0072] The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to represent "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "comprising" and / or "including" specify the presence of the features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or combinations thereof.

[0073] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, the element described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is turned over, the element described as being "lower" or "below" the other elements will be oriented as being "above" the other elements. Therefore, the exemplary term "lower" or "below" can include both above and below orientations.

[0074] Figure 1A FIG. 1 is a schematic top view of a dual sensing device 10 according to an embodiment of the present invention. Figure 1B is along Figure 1A A schematic cross-sectional view taken along the section line AA'. Figure 1C is along Figure 1A In order to make the expression of the accompanying drawings more concise, Figure 1A The first substrate 110 , the first sensing element S1 , and the second sensing element S2 are schematically shown, and other components are omitted.

[0075] Please refer to Figures 1A to 1CThe dual sensing device 10 includes: a first substrate 110; a first sensing element layer 130, which is located on the first substrate 110 and includes a plurality of first sensing elements S1; a second substrate 120, which is located on the first sensing element layer 130; and a second sensing element layer 140, which is located on a side of the second substrate 120 close to the first sensing element layer 130 and includes a plurality of second sensing elements S2.

[0076] In the dual sensing device 10 of one embodiment of the present invention, the first sensing element S1 and the second sensing element S2 are respectively disposed on the first substrate 110 and the second substrate 120 and then assembled, so that the integrated structure of the dual sensing device 10 can be simplified. Figures 1A to 1C , the implementation of each component of the dual sensing device 10 is further described, but the present invention is not limited thereto.

[0077] Please refer to Figure 1A In the present embodiment, a first sensing element S1 and a second sensing element S2 may constitute a sensing unit SU, but the present invention is not limited thereto. Generally speaking, there is no special restriction on the ratio of the number of first sensing elements S1 to the number of second sensing elements S2, and the number of first sensing elements S1 may be greater than, equal to, or less than the number of second sensing elements S2. For example, in some embodiments, a first sensing element S1 may be provided in each sensing unit SU, and a second sensing element S2 may be provided in a plurality of (e.g., 2, 4, 6, 9 or more) sensing units SU. In some embodiments, a second sensing element S2 may be provided in each sensing unit SU, and a first sensing element S1 may be provided in a plurality of (e.g., 2, 4, 6, 9 or more) sensing units SU.

[0078] In addition, in this embodiment, there is no special restriction on the shape and area ratio of the first sensing element S1 and the second sensing element S2 in each sensing unit SU, and the area of ​​the first sensing element S1 can be greater than, equal to, or less than the area of ​​the second sensing element S2. In addition, the orthographic projections of the first sensing element S1 and the second sensing element S2 on the first substrate 110 can be completely staggered or partially overlapped, as long as the second sensing element S2 does not affect the light collection of the first sensing element S1. For example, the orthographic projection of the second sensing element S2 on the first substrate 110 can be outside the orthographic projection of the first sensing element S1 on the first substrate 110, but is not limited thereto.

[0079] Please refer to Figure 1B In the present embodiment, the first substrate 110 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other appropriate materials, but is not limited thereto.

[0080] The first sensing element layer 130 may include planar layers PL2, PL3 and a plurality of first sensing elements S1, wherein the first sensing element S1 may be a visible light sensing element, such as a visible light fingerprint sensing element, but not limited thereto. In some embodiments, the first sensing element S1 may be an invisible light sensing element. For example, in the present embodiment, the first sensing element S1 may include an electrode E11, a sensing layer SR and an electrode E12, and the sensing layer SR is located between the electrode E11 and the electrode E12, and the electrode E12 may be located between the planar layers PL2 and PL3. In some embodiments, the planar layer PL2 may have a plurality of holes TH, and the electrode E12 may be conformally formed on the planar layer PL2, so that the electrode E12 is correspondingly formed with a plurality of recesses ST.

[0081] For example, the material of the electrode E11 may be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy or stack of two or more of the above materials. The material of the sensing layer SR may be silicon-rich oxide (SRO), germanium-doped silicon-rich oxide or other suitable materials. The material of the electrode E12 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or a stack of at least two of the above. The material of the planar layers PL2 and PL3 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy materials or stacks of the above materials, but the present invention is not limited thereto.

[0082] In the present embodiment, the dual sensing device 10 may further include a driving circuit layer DL1 located between the first sensing element layer 130 and the first substrate 110. The driving circuit layer DL1 may include elements or circuits required by the dual sensing device 10, such as driving elements, switching elements, power lines, driving signal lines, timing signal lines, detection signal lines, etc. For example, the driving circuit layer DL1 may be formed by a thin film deposition process, a photolithography process, and an etching process, and the driving circuit layer DL1 may include an active element array, wherein the active element array may include a plurality of first switching elements T1 arranged in an array, and the plurality of first switching elements T1 are respectively electrically connected to a plurality of first sensing elements S1.

[0083] Specifically, the driving circuit layer DL1 may include a first switching element T1, a buffer layer I1, a gate insulating layer I2, an interlayer insulating layer I3, and a planar layer PL1. The first switching element T1 may be composed of a semiconductor layer CH1, a gate GE1, a source SE1, and a drain DE1. The region where the semiconductor layer CH1 overlaps the gate GE1 may be regarded as a channel region of the first switching element T1. The gate insulating layer I2 is located between the gate GE1 and the semiconductor layer CH1, and the interlayer insulating layer I3 is disposed between the source SE1 and the gate GE1, and between the drain DE1 and the gate GE1. The gate GE1 and the source SE1 may receive signals from, for example, a driving element, respectively, and the electrode E11 of the first sensing element S1 may be electrically connected to the drain DE1 through a through hole VA1 in the planar layer PL1. When the gate GE1 receives a signal and turns on the first switching element T1, the signal received by the source SE1 may be transmitted to the electrode E11 of the first sensing element S1 through the drain DE1. In other embodiments, the driving circuit layer DL1 may further include more insulating layers and conductive layers as needed.

[0084] For example, the material of the semiconductor layer CH1 may include a silicon semiconductor material (such as polycrystalline silicon, amorphous silicon, etc.), an oxide semiconductor material, an organic semiconductor material, and the material of the gate GE1, the source SE1, and the drain DE1 may include a metal with good conductivity, such as aluminum, molybdenum, titanium, copper, or an alloy or stack of the above metals, but not limited thereto. The material of the buffer layer I1, the gate insulating layer I2, and the interlayer insulating layer I3 may include a transparent insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or a stack of the above materials, but the present invention is not limited thereto. The material of the planar layer PL1 may include a transparent insulating material, such as an organic material, an acrylic material, a siloxane material, a polyimide material, an epoxy material, etc., but not limited thereto. The buffer layer I1, the gate insulating layer I2, the interlayer insulating layer I3 and the planar layer PL1 may also have a single-layer structure or a multi-layer structure respectively. The multi-layer structure is, for example, a stack of any two or more layers of the above insulating materials, which can be combined and changed as needed.

[0085] In some embodiments, the dual sensing device 10 may further include a collimating layer CL as needed. The collimating layer CL may be located on the first sensing element layer 130 to limit the light collection angle of the first sensing element S1 , thereby improving the light sensing efficiency of the first sensing element S1 .

[0086] For example, the collimating layer CL may include a light shielding layer BM1, a flat layer PL4, a light shielding layer BM2, a flat layer PL5, an infrared light shielding layer RC, a flat layer PL6, a light shielding layer BM3 and a collimating structure ML1, wherein the light shielding layer BM1, the light shielding layer BM2 and the light shielding layer BM3 may have through holes V1, V2 and V3 respectively, and the orthographic projections of the through holes V1, V2 and V3 on the electrode E12 all fall into the recess ST. The collimating structure ML1 may be disposed in the through hole V3, and the collimating structure ML1 may be a lens structure with a center thickness greater than an edge thickness, such as a symmetrical biconvex lens, an asymmetrical biconvex lens, a plano-convex lens or a concave-convex lens. The collimating structure ML1 may improve light collimation, reduce light leakage and light mixing problems caused by scattered light or refracted light, and thereby improve image resolution. For example, the light may first pass through the collimating structure ML1 , the through hole V2 and the through hole V1 to improve the collimation, and then enter the concave portion ST of the first sensing element S1 to obtain a fingerprint image with good quality, thereby providing good fingerprint recognition.

[0087] The materials of the light shielding layer BM1, the light shielding layer BM2 and the light shielding layer BM3 may include light shielding materials such as metal, black resin or graphite, or stacks of the above light shielding materials. For example, in some embodiments, the light shielding layer BM1, the light shielding layer BM2 or the light shielding layer BM3 may include a metal layer and a stack of semi-transparent metal oxide layers, wherein the material of the metal layer may include a metal with good electrical conductivity, such as aluminum, molybdenum, titanium, copper, silver and other metals or stacks thereof, and the material of the semi-transparent metal oxide layer may include a metal oxide that can reduce the reflectivity of the metal layer, such as molybdenum tantalum oxide (MoTaOx) or molybdenum niobium oxide (MoNbOx), but is not limited thereto.

[0088] In this embodiment, the second substrate 120 may be a transparent substrate, and its material includes a quartz substrate, a glass substrate, a polymer substrate, etc., but is not limited thereto.

[0089] The second sensing element layer 140 may include flat layers PL7, PL8, an insulating layer I4, and a plurality of second sensing elements S2, wherein the second sensing element S2 may be an invisible light sensing element, such as an infrared light sensing element, so that the second sensing element S2 may be used, for example, to extract a vein image for live anti-counterfeiting, or to extract a fingerprint image, that is, the second sensing element S2 may be an invisible light fingerprint sensing element or a live anti-counterfeiting sensing element. In the present embodiment, the second sensing element S2 may be an organic photodiode (OPD), and the second sensing element S2 may include an electrode E21, an electron transport layer ET, a photosensitive layer PT, a hole transport layer HT, and an electrode E22, wherein the electron transport layer ET, the photosensitive layer PT, and the hole transport layer HT are located between the electrode E21 and the electrode E22, the photosensitive layer PT is located between the electron transport layer ET and the hole transport layer HT, and the electron transport layer ET may be located between the photosensitive layer PT and the second substrate 120 adjacent to the electrode E21.

[0090] For example, the material of the electrode E21 may be a transparent conductive material, such as indium tin oxide (ITO); the electron transport layer ET may include zinc oxide (ZnO) or aluminum zinc oxide (AZO); the photosensitive layer PT may include a photosensitive polymer that absorbs in the infrared light (IR) region and the near infrared light (NIR) region, such as P3HT:PCBM (poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester) or PDPP3T-PCBM (poly-(diketopyrrole-terthiophene):[6,6]-phenyl-C61-butyricacid methyl ester); the hole transport layer HT may include PEDOT:PSS (poly(3,4-ethylenedioxythiophene:polystyrene sulfonate)) or a high work function metal oxide (such as MoO3); and the electrode E22 may be a silver layer or an aluminum layer.

[0091] In this embodiment, the dual sensing device 10 may further include a driving circuit layer DL2 located between the second sensing element layer 140 and the second substrate 120. The driving circuit layer DL2 may include elements or circuits required by the dual sensing device 10, such as a signal line SL, and the signal line SL may be electrically connected to the electrode E21 of the second sensing element S2.

[0092] In the present embodiment, the dual sensing device 10 may further include a plurality of spacers PS, and the spacers PS may be located between the first sensing element layer 130 and the second sensing element layer 140. For example, when the dual sensing device 10 includes an alignment layer CL disposed above the first sensing element layer 130, the spacers PS may be disposed between the planar layer PL6 of the alignment layer CL and the planar layer PL8 of the second sensing element layer 140, so that a gap GP can be formed between the planar layer PL6 and the planar layer PL8, thereby preventing the alignment structure ML1 of the alignment layer CL from being compressed by an external force.

[0093] In this embodiment, the dual sensing device 10 may further include a light source LS, which may be disposed on a side of the second substrate 120 opposite to the second sensing element layer 140, and the light source LS may include a visible light source and an invisible light source, such as an infrared light source. The visible light emitted by the light source LS may be reflected by a finger and enter the first sensing element S1, and the infrared light emitted by the light source LS may be reflected by a finger and enter the second sensing element S2. In this way, the electron transport layer ET of the second sensing element S2 may be closer to the upper light source LS than the hole transport layer HT, so that the second sensing element S2 can have a better photoelectric conversion efficiency (EQE).

[0094] For example, in some embodiments, the light source LS may be a light emitting diode display module, so that the dual sensing device 10 can be used as a display device capable of providing fingerprint sensing function and vein image extraction function, and the first sensing element S1 and the second sensing element S2 do not affect the aperture ratio of the display device.

[0095] Please refer to Figure 1C In some embodiments, the dual sensing device 10 may further include a flip chip film (Chip on film) CF. The flip chip film CF may be located in a peripheral area of ​​the dual sensing device 10 , and the flip chip film CF may electrically connect the first sensing element layer 130 and the second sensing element layer 140 .

[0096] For example, the flip chip film CF may be sandwiched between the first sensing element layer 130 and the second sensing element layer 140, and the flip chip film CF may extend between the peripheral area of ​​the first substrate 110 and the peripheral area of ​​the second substrate 120. A plurality of pins may be respectively disposed on the lower surface F1 and the upper surface F2 of the flip chip film CF, wherein the pins located on the lower surface F1 may be electrically connected to the first sensing element S1 through a conductive glue H1 or other conductive materials (e.g., silver paste), and the pins located on the upper surface F2 may be electrically connected to the second sensing element S2 through a conductive glue H2 or other conductive materials.

[0097] In some embodiments, the flip chip film CF can be electrically connected to the first sensing element S1 through the first switch element T1 in the driving circuit layer DL1, and the flip chip film CF can be electrically connected to the second sensing element S2 through the signal line SL in the driving circuit layer DL2, so that the first switch element T1 can also be electrically connected to the second sensing element S2. In this way, the dual sensing device 10 can also use the first switch element T1 to control the signal reception of the second sensing element S2, and then receive the signals of the first sensing element S1 and the second sensing element S2 at different time periods through timing control.

[0098] Below, use Figures 2 to 3 Continue to describe other embodiments of the present invention, and continue to use Figures 1A to 1C The component numbers and related contents of the embodiments are the same, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to Figure 1A to Figure 1B The embodiments of the present invention will not be repeated in the following description.

[0099] Figure 2 1 is a cross-sectional view of a dual sensing device 20 according to an embodiment of the present invention. The dual sensing device 20 includes a first substrate 110, a second substrate 120, a first sensing element layer 130, a second sensing element layer 140, a driving circuit layer DL1, DL2, a collimating layer CL, a light source LS, and a plurality of spacers PS. Figures 1A to 1C Compared with the dual sensing device 10 shown, Figure 2 The dual sensing device 20 shown is different in that the dual sensing device 20 further includes an alignment structure ML2 .

[0100] In the present embodiment, the collimating structure ML2 may be located on a side of the second sensing element layer 140 close to the first sensing element layer 130. For example, the collimating structure ML2 may be disposed on the flat layer PL8 of the second sensing element layer 140 and protrude from the gap GP, and the orthographic projection of the collimating structure ML2 on the first substrate 110 may overlap the orthographic projection of the collimating structure ML1 on the first substrate 110. Preferably, the central axis of the collimating structure ML2 may be coaxial with the central axis of the collimating structure ML1, so as to effectively enhance the light collimation effect of the light entering the first sensing element layer 130.

[0101] Figure 3 1 is a cross-sectional view of a dual sensing device 30 according to an embodiment of the present invention. The dual sensing device 30 includes a first substrate 110, a second substrate 120, a first sensing element layer 130, a second sensing element layer 140, a driving circuit layer DL1, DL2, a collimating layer CL, a light source LS, and a plurality of spacers PS. Figures 1A to 1C Compared with the dual sensing device 10 shown, Figure 3The difference of the dual sensing device 30 shown is that the driving circuit layer DL2 of the dual sensing device 30 includes a second switching element T2 .

[0102] For example, in the present embodiment, the driving circuit layer DL2 may include a second switching element T2, a buffer layer I5, a gate insulating layer I6, an interlayer insulating layer I7, and a planar layer PL9. The second switching element T2 may be composed of a semiconductor layer CH2, a gate GE2, a source SE2, and a drain DE2. The region where the semiconductor layer CH2 overlaps the gate GE2 may be regarded as a channel region of the second switching element T2. The gate insulating layer I6 is located between the gate GE2 and the semiconductor layer CH2, and the interlayer insulating layer I7 is disposed between the source SE2 and the gate GE2, and between the drain DE2 and the gate GE2. The gate GE2 and the source SE2 may receive signals from, for example, a driving element, respectively, and the electrode E21 of the second sensing element S2 may be electrically connected to the drain DE2 through a through hole VA2 in the planar layer PL9. When the gate GE2 receives a signal and turns on the second switching element T2, the signal received by the source SE2 may be transmitted to the electrode E21 of the second sensing element S2 through the drain DE2. In this way, the dual sensing device 30 can also utilize the first switch element T1 and the second switch element T2 to control the signal reception of the first sensing element S1 and the second sensing element S2 respectively.

[0103] In summary, the first sensing element and the second sensing element of the dual sensing device of the present invention are respectively disposed on the first substrate and the second substrate. In addition to simplifying the integration structure and corresponding processes of the dual sensing device, when applied to a display device, the aperture ratio of the display device will not be affected.

[0104] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Those skilled in the art may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended claims.

Claims

1. A dual sensing device, comprising: a first substrate; A first sensing element layer, located on the first substrate and comprising a plurality of first sensing elements; A second substrate, located on the first sensing element layer; as well as A second sensing element layer is located on a side of the second substrate close to the first sensing element layer and includes a plurality of second sensing elements; A first driving circuit layer is included between the first sensing element layer and the first substrate, and a second driving circuit layer is included between the second sensing element layer and the second substrate; a collimating layer, the collimating layer being located on the first sensing element layer; A plurality of spacers are located between the alignment layer and the second sensing element layer, so that there is a gap between the alignment layer and the second sensing element layer. 2 . The dual sensing device as claimed in claim 1 , wherein the first sensing element is a visible light sensing element. 3 . The dual sensing device as claimed in claim 1 , wherein the first sensing element is a fingerprint sensing element. The dual sensing device as claimed in claim 1 , wherein the second sensing element is an infrared light sensing element. 5 . The dual sensing device as claimed in claim 1 , wherein the second sensing element is a fingerprint sensing element or a living body anti-counterfeiting sensing element. The dual sensing device as claimed in claim 1 , wherein the second sensing element is an organic photodiode.

7. The dual sensing device as claimed in claim 6, wherein the organic photodiode comprises an electron transport layer, a hole transport layer and a photosensitive layer located between the electron transport layer and the hole transport layer, and the electron transport layer is located between the photosensitive layer and the second substrate. 8 . The dual sensing device as claimed in claim 1 , wherein an orthographic projection of the second sensing element on the first substrate is outside an orthographic projection of the first sensing element on the first substrate. 9 . The dual sensing device as claimed in claim 1 , wherein a plurality of spacers are located between the first sensing element layer and the second sensing element layer. 10 . The dual sensing device as claimed in claim 1 , further comprising a first switch element located on the first substrate and electrically connected to the first sensing element. 11 . The dual sensing device as claimed in claim 10 , wherein the first switch element is further electrically connected to the second sensing element. 12 . The dual sensing device as claimed in claim 10 , further comprising a second switch element located on the second substrate and electrically connected to the second sensing element.

13. The dual sensing device of claim 1, wherein the alignment layer comprises a first alignment structure, the first alignment structure being located on the first sensing element.

14. The dual sensing device as claimed in claim 13, further comprising a second collimating structure located on a side of the second sensing element layer close to the first sensing element layer, and an orthographic projection of the second collimating structure on the first substrate overlaps an orthographic projection of the first collimating structure on the first substrate. 15 . The dual sensing device of claim 1 , further comprising a light source located on a side of the second substrate opposite to the second sensing element layer.

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