Semiconductor device manufacturing sheets

Abstract

The present invention is a sheet for manufacturing semiconductor devices, which includes a substrate, an adhesive layer, an intermediate layer and a film-like adhesive. The sheet for manufacturing semiconductor devices is composed of the adhesive layer, the intermediate layer and the film-like adhesive stacked in sequence on the substrate, and the intermediate layer contains a non-silicone resin with a weight-average molecular weight of 100,000 or less as a main component.

Description

Technical Field

[0001] The present invention relates to a sheet for manufacturing semiconductor devices.

[0002] This application claims priority based on Japanese Patent Application No. 2020-058734, filed in Japan on March 27, 2020, the contents of which are incorporated herein by reference. Background Art

[0003] When manufacturing a semiconductor device, a semiconductor chip with a film adhesive is used, which includes a semiconductor chip and a film adhesive provided on the back surface of the semiconductor chip.

[0004] As an example of a method for producing a semiconductor chip with a film-like adhesive, the following method can be mentioned.

[0005] That is, first, a dicing die bonding sheet is attached to the back side of the semiconductor wafer.

[0006] Examples of cutting wafers include those having a support sheet and a film-like adhesive disposed on one surface of the support sheet. These support sheets can be used as cutting wafers. There are various types of support sheets with different structures, such as a support sheet having a base material and an adhesive layer disposed on one surface of the base material; a support sheet consisting solely of a base material; and the like. For a support sheet having an adhesive layer, the outermost surface on the adhesive layer side is the surface on which the film-like adhesive is disposed. The cutting wafer is attached to the back surface of the semiconductor wafer via the film-like adhesive therein.

[0007] Next, the semiconductor wafer on the support sheet is cut together with the film adhesive by a blade cutting. The "cutting" of the semiconductor wafer is also called "division", whereby the semiconductor wafer is singulated into target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. Thus, a semiconductor chip with a film adhesive having a semiconductor chip and a cut film adhesive arranged on the back of the semiconductor chip can be obtained, and at the same time, a semiconductor chip group with a film adhesive can be obtained in which a plurality of these semiconductor chips with a film adhesive are maintained on the support sheet in an orderly arranged state.

[0008] Then, the semiconductor chip with the film-like adhesive is pulled off the support sheet to be picked up. When using a support sheet with a curable adhesive layer, the adhesive layer can be cured in advance to reduce the tackiness, making it easier to pick up.

[0009] In this way, a semiconductor chip with a film-like adhesive for use in manufacturing a semiconductor device can be obtained.

[0010] As another example of the method for producing a semiconductor chip with a film-like adhesive, the following method can be cited.

[0011] That is, first, a backgrinding tape (sometimes also referred to as "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer.

[0012] Then, inside the semiconductor wafer, a predetermined segmentation portion is set, the area contained in the portion is used as a focus, and the laser is irradiated in such a way that the laser is focused on the focus, thereby forming a modified layer inside the semiconductor wafer. Then, a grinder is used to grind the back of the semiconductor wafer to adjust the thickness of the semiconductor wafer to a target value, and at the same time, the force applied to the semiconductor wafer during grinding is utilized to divide the semiconductor wafer (single-piece) at the portion where the modified layer is formed to produce a plurality of semiconductor chips. This method of dividing a semiconductor wafer accompanied by the formation of a modified layer is called Stealth Dicing (registered trademark), which is completely different in nature from laser cutting, which cuts off the semiconductor wafer from the surface of the semiconductor wafer while cutting the semiconductor wafer at the irradiated portion by irradiating the semiconductor wafer with a laser.

[0013] Next, a bonding wafer is attached to the ground backside (in other words, the ground surface) of all semiconductor chips secured to the backgrinding tape. The bonding wafer can be made of the same material as the dicing bonding wafer described above. As mentioned above, the bonding wafer can sometimes be designed to have the same structure as the dicing bonding wafer, except that it is not used when dicing semiconductor wafers. Alternatively, the bonding wafer can be attached to the backside of the semiconductor chip using a film-like adhesive within the bonding wafer.

[0014] Next, after removing the back grinding tape from the semiconductor chip, the solid wafer is stretched in a direction parallel to its surface (e.g., the surface where the film adhesive is attached to the semiconductor chip) while cooling, performing so-called expansion (cold expansion), thereby cutting the film adhesive along the periphery of the semiconductor chip.

[0015] Thereby, a semiconductor chip with a film-like adhesive can be obtained, which includes a semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip.

[0016] Next, in the same manner as in the case of dicing using a blade, the semiconductor chip with the film-like adhesive is pulled off from the support sheet and picked up, thereby obtaining a semiconductor chip with the film-like adhesive for use in manufacturing a semiconductor device.

[0017] Both the dicing wafer and the bonding wafer can be used to manufacture semiconductor chips with a film-like adhesive, and ultimately to manufacture the target semiconductor device. In this specification, the dicing wafer and the bonding wafer are collectively referred to as "sheets for semiconductor device manufacturing."

[0018] As a sheet for manufacturing semiconductor devices, for example, a dicing bonding tape (equivalent to the dicing bonding chip) is disclosed, which has a structure in which a base layer (equivalent to the support sheet) and an adhesive layer (equivalent to the film-like adhesive) are laminated in direct contact (see Patent Document 1). For this dicing bonding tape, since the 90-degree peeling force of the base layer and the adhesive layer at -15°C is adjusted to a specific range, the adhesive layer can be separated with good precision by expansion, and since the 90-degree peeling force of the base layer and the adhesive layer at 23°C is adjusted to a specific range, when using this dicing bonding tape, a semiconductor chip with an adhesive layer (equivalent to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and the semiconductor wafer and the semiconductor chip can be prevented from peeling off from the adhesive layer during the process until picking up.

[0019] Prior art literature

[0020] Patent Literature

[0021] Patent Document 1: Japanese Patent Application Publication No. 2018-56289 Summary of the Invention

[0022] Technical Problems to be Solved by the Invention

[0023] However, while the dicing tape disclosed in Patent Document 1 is suitable for Stealth Dicing (registered trademark), it is not suitable for blade dicing. Using this dicing tape for blade dicing easily generates whisker-like shavings (sometimes referred to as "whiskers" in the art) from the substrate layer, resulting in poor slicing performance when separating semiconductor wafers.

[0024] An object of the present invention is to provide a sheet for manufacturing semiconductor devices having excellent suitability for dividing semiconductor wafers.

[0025] Technical means to solve technical problems

[0026] The present invention provides a sheet for manufacturing semiconductor devices, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive. The sheet for manufacturing semiconductor devices is constructed by sequentially stacking the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, wherein the intermediate layer contains a non-silicone resin with a weight-average molecular weight of 100,000 or less as a main component.

[0027] In the semiconductor device manufacturing sheet of the present invention, when the film-like adhesive side surface of the intermediate layer is analyzed by X-ray photoelectron spectroscopy, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon may be 1 to 20%.

[0028] In the sheet for manufacturing a semiconductor device of the present invention, the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound. In the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units can be 10 to 40 mass %, in the intermediate layer, the ratio of the content of the ethylene-vinyl acetate copolymer to the total mass of the intermediate layer can be 90 to 99.99 mass %, and in the intermediate layer, the ratio of the content of the siloxane compound to the total mass of the intermediate layer can be 0.01 to 10 mass %.

[0029] Effects of the Invention

[0030] According to the present invention, a sheet for manufacturing semiconductor devices having excellent suitability for dividing semiconductor wafers can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0032] Figure 2 for Figure 1 A top view of a wafer for manufacturing a semiconductor device is shown.

[0033] Figure 3A This is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention.

[0034] Figure 3B This is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention.

[0035] Figure 3C This is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention.

[0036] Figure 4A This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0037] Figure 4B This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0038] Figure 4C This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0039] Figure 5AThis is a cross-sectional view schematically illustrating another example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention.

[0040] Figure 5B This is a cross-sectional view schematically illustrating another example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention.

[0041] Figure 5C This is a cross-sectional view schematically illustrating another example of a method of using the semiconductor device manufacturing sheet according to one embodiment of the present invention. DETAILED DESCRIPTION

[0042] ◇Sheets for semiconductor device manufacturing

[0043] A sheet for manufacturing a semiconductor device according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is formed by sequentially stacking the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, wherein the intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component.

[0044] When the semiconductor device manufacturing sheet of this embodiment is used as a dicing wafer and subjected to blade dicing, the presence of the intermediate layer makes it easier to prevent the blade from reaching the substrate, thereby suppressing the generation of whisker-like chips (also known as whiskers, hereinafter referred to as "chips" and not limited to chips from the substrate) from the substrate. Furthermore, by making the primary component of the intermediate layer cut by the blade a non-silicone resin with a weight-average molecular weight of 100,000 or less, particularly by setting the weight-average molecular weight to 100,000 or less, the generation of chips from the intermediate layer can be further suppressed.

[0045] On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a solid wafer and dicing (Stealth Dicing (registered trademark)) is performed accompanied by the formation of a modified layer in the semiconductor wafer, since the semiconductor device manufacturing sheet has the intermediate layer, the film adhesive can be cut at the target position with good precision by continuing to stretch the semiconductor device manufacturing sheet in a direction parallel to its surface (for example, the attachment surface of the film adhesive to the semiconductor chip), that is, so-called expansion is performed, thereby suppressing poor cutting.

[0046] In this way, the semiconductor device manufacturing sheet of this embodiment can suppress the generation of cutting chips from the substrate and the intermediate layer when blade cutting is performed, and can suppress the poor cutting of the film adhesive when performing the above-mentioned expansion. It has the characteristic of suppressing the occurrence of adverse situations when splitting semiconductor wafers, and has excellent suitability for splitting semiconductor wafers.

[0047] In this specification, unless otherwise specified, the "weight average molecular weight" refers to a polystyrene-equivalent value measured by gel permeation chromatography (GPC).

[0048] The method of using the semiconductor device manufacturing sheet of this embodiment will be described in detail later.

[0049] Hereinafter, the semiconductor device manufacturing sheet of this embodiment will be described in detail with reference to the accompanying drawings. In addition, in order to facilitate understanding of the features of the present invention, important parts of the drawings used in the following description may sometimes be enlarged for convenience, and the dimensional ratios of the various components may not necessarily be the same as the actual ones.

[0050] Figure 1 This is a cross-sectional view schematically showing a semiconductor device manufacturing sheet according to one embodiment of the present invention. Figure 2 for Figure 1 A top view of a wafer for manufacturing a semiconductor device is shown.

[0051] In addition, Figure 2 In the subsequent drawings, the same components as those shown in the already described drawings are denoted by the same reference numerals as those in the already described drawings, and detailed description thereof is omitted.

[0052] The semiconductor device manufacturing sheet 101 shown here includes a substrate 11 and is constructed by sequentially laminating an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 on the substrate 11. The semiconductor device manufacturing sheet 101 further includes a release film 15 on a surface 14a of the film-like adhesive 14 opposite to the side on which the intermediate layer 13 is provided (hereinafter sometimes referred to as the "first surface") .

[0053] In a sheet 101 for manufacturing a semiconductor device, an adhesive layer 12 is provided on one surface 11a of a substrate 11 (sometimes referred to as the "first surface" in this specification). An intermediate layer 13 is provided on the surface 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided (sometimes referred to as the "first surface" in this specification). A film-like adhesive 14 is provided on the surface 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided (sometimes referred to as the "first surface" in this specification), and a release film 15 is provided on the first surface 14a of the film-like adhesive 14. Thus, the sheet 101 for manufacturing a semiconductor device is constructed by laminating the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 in this order along their thickness directions.

[0054] The semiconductor device manufacturing sheet 101 is used as follows: with the release film 15 removed, the first surface 14a of the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the back surface of a semiconductor wafer, a semiconductor chip, or an incompletely divided semiconductor wafer (not shown).

[0055] In this specification, in both semiconductor wafers and semiconductor chips, the surface on which a circuit is formed is referred to as a "circuit-formed surface," and the surface opposite to the circuit-formed surface is referred to as a "back surface."

[0056] In this specification, a laminate having a structure in which a base material and an adhesive layer are laminated in their thickness direction without an intermediate layer is sometimes referred to as a "support sheet". Figure 1 , reference numeral 1 denotes a supporting sheet.

[0057] Furthermore, a laminate having a structure in which a base material, an adhesive layer, and an intermediate layer are sequentially laminated in their thickness direction is referred to as a "laminated sheet." Figure 1 Reference numeral 10 denotes a laminated sheet. A laminated body of the support sheet and the intermediate layer is included in the laminated sheet.

[0058] When looking down at the intermediate layer 13 and the film-like adhesive 14 from above, the planar shapes of the intermediate layer 13 and the film-like adhesive 14 are both circular, and the diameter of the intermediate layer 13 is the same as that of the film-like adhesive 14 .

[0059] In the semiconductor device manufacturing sheet 101 , the intermediate layer 13 and the film adhesive 14 are arranged so that their centers coincide with each other. In other words, the positions of their outer peripheries coincide with each other in their radial directions.

[0060] The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 are both smaller in area than the first surface 12a of the pressure-sensitive adhesive layer 12. 13 The maximum value (ie, diameter) and the width W of the film adhesive 14 14 The maximum value (i.e., diameter) of each of the adhesive layer 12 and the substrate 11 is smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. The release film 15 is in direct contact with and laminated on the area of ​​the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated. When the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may be referred to as a "non-laminated area").

[0061] In addition, in the semiconductor device manufacturing sheet 101 having the release film 15, there may be an area where the release film 15 is not laminated on the area of ​​the adhesive layer 12 not covered by the intermediate layer 13 and the film adhesive 14 as shown here, or there may be no area where the release film 15 is not laminated.

[0062] Semiconductor device manufacturing sheet 101, which is attached to the semiconductor wafer or semiconductor chip by film adhesive 14 without being cut, can be secured by attaching a portion of the non-laminated region of adhesive layer 12 to a jig, such as a ring frame, used to secure the semiconductor wafer. Consequently, there is no need to provide a separate jig adhesive layer on semiconductor device manufacturing sheet 101 to secure it to the jig. Furthermore, since no jig adhesive layer is required, semiconductor device manufacturing sheet 101 can be manufactured efficiently and at low cost.

[0063] Although the semiconductor device manufacturing sheet 101 achieves advantageous effects by not including a jig adhesive layer as described above, it may also include a jig adhesive layer. In this case, the jig adhesive layer is provided in an area near the peripheral edge of the surface of any layer constituting the semiconductor device manufacturing sheet 101. Examples of such areas include the non-laminated area on the first surface 12a of the adhesive layer 12.

[0064] The jig adhesive layer may be a known jig adhesive layer, and may be, for example, a single layer structure containing an adhesive component, or a multilayer structure in which layers containing an adhesive component are laminated on both surfaces of a core sheet.

[0065] Furthermore, when the sheet 101 for manufacturing a semiconductor device is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) in the manner described below, i.e., when so-called expansion is performed, the sheet 101 for manufacturing a semiconductor device can be easily expanded due to the presence of the non-laminated region on the first surface 12a of the adhesive layer 12. Furthermore, not only can the film-like adhesive 14 be easily cut, but it is also possible to suppress the intermediate layer 13 and the film-like adhesive 14 from being peeled off from the adhesive layer 12.

[0066] In the semiconductor device manufacturing sheet 101 , the intermediate layer 13 contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

[0067] The semiconductor device manufacturing sheet of this embodiment is not limited to Figure 1 and Figure 2 The semiconductor device manufacturing sheet shown in the figure can be used for the semiconductor device manufacturing sheet within the range not impairing the effect of the present invention. Figure 1 and Figure 2Part of the configuration of the semiconductor device manufacturing sheet shown is changed, deleted, or added.

[0068] For example, the semiconductor device manufacturing sheet of this embodiment may also include other layers that do not belong to any of the layers of the base material, the adhesive layer, the intermediate layer, the film adhesive, the release film, and the clamp adhesive layer. However, the semiconductor device manufacturing sheet of this embodiment is preferably as follows Figure 1 As shown, the adhesive layer is provided in direct contact with the substrate, the intermediate layer is provided in direct contact with the adhesive layer, and the film adhesive is provided in direct contact with the intermediate layer.

[0069] For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shape of the intermediate layer and the film-like adhesive may be a shape other than a circle, and the planar shapes of the intermediate layer and the film-like adhesive may be the same or different. In addition, it is preferred that the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive are both smaller than the area of ​​the surface of the layer closer to the substrate (e.g., the first surface of the adhesive layer), and the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive may be the same or different. Furthermore, the positions of the outer peripheries of the intermediate layer and the film-like adhesive may be consistent or inconsistent in their radial directions.

[0070] Next, each layer constituting the semiconductor device manufacturing sheet according to this embodiment will be described in more detail.

[0071] ○Base material

[0072] The substrate is in sheet or film form.

[0073] The constituent material of the substrate is preferably various resins, and specific examples include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated products, modified products, cross-linked products or copolymers of any of the above resins, etc.

[0074] In this specification, "(meth)acrylic acid" is a concept encompassing both "acrylic acid" and "methacrylic acid." Terms similar to (meth)acrylic acid are also used in the same manner. For example, "(meth)acrylate" is a concept encompassing both "acrylate" and "methacrylate," and "(meth)acryloyl" is a concept encompassing both "acryloyl" and "methacryloyl."

[0075] The resin constituting the substrate may be one type or two or more types. When two or more types are used, the combination and ratio of the resins may be arbitrarily selected.

[0076] The substrate may be composed of a single layer or a plurality of layers. When the substrate is composed of a plurality of layers, the plurality of layers may be the same as or different from each other. As long as the effects of the present invention are not impaired, the combination of the plurality of layers is not particularly limited.

[0077] In this specification, not limited to the base material, "multiple layers may be the same as or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same", and further, "multiple layers are different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

[0078] The thickness of the substrate can be appropriately selected depending on the intended purpose, preferably ranging from 50 to 300 μm, more preferably from 60 to 150 μm. By setting the substrate thickness above the lower limit, the substrate structure becomes more stable. By setting the substrate thickness below the upper limit, the film adhesive can be more easily cut during blade dicing and during expansion of the semiconductor device manufacturing sheet.

[0079] Here, the “thickness of the substrate” refers to the thickness of the entire substrate. For example, the thickness of a substrate composed of multiple layers refers to the total thickness of all layers constituting the substrate.

[0080] In order to improve the adhesion between the substrate and other layers such as the adhesive layer arranged thereon, the surface of the substrate can be subjected to a concave-convex treatment based on sandblasting, solvent treatment, embossing treatment, etc.; an oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc.

[0081] The surface of the substrate may also be subjected to a primer treatment.

[0082] The substrate may also have an antistatic coating, a layer that prevents the substrate from adhering to other sheets or to a suction table when the solid wafer is stacked and stored, and the like.

[0083] The base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers) in addition to the main constituent materials such as the resin.

[0084] The optical properties of the substrate are not particularly limited as long as the effects of the present invention are not impaired. For example, the substrate may be a substrate that transmits laser light or energy rays.

[0085] The substrate can be produced by a known method. For example, a substrate containing a resin (having a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.

[0086] ○Adhesive layer

[0087] The adhesive layer is in a sheet or film shape and contains an adhesive.

[0088] The adhesive layer can be formed using an adhesive composition containing the adhesive. For example, the adhesive composition is applied to the surface on which the adhesive layer is to be formed and dried as needed to form the adhesive layer at the target site.

[0089] In the adhesive layer, the total content of one or two or more components described below in the adhesive layer does not exceed 100% by mass based on the total mass of the adhesive layer.

[0090] Similarly, in the adhesive composition, the total content of one or two or more components described below in the adhesive composition does not exceed 100% by mass relative to the total mass of the adhesive composition.

[0091] The adhesive composition may be applied by a known method, for example, methods using various coaters such as an air knife coater, blade coater, rod coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, Mayer rod coater, and kiss coater.

[0092] The drying conditions of the adhesive composition are not particularly limited. However, when the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes, for example.

[0093] Examples of the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin, and acrylic resin is preferred.

[0094] In this specification, the term "adhesive resin" encompasses both resins having adhesive properties and resins having tackiness. For example, the adhesive resin includes not only resins having adhesive properties per se but also resins that exhibit adhesive properties through the use of other components such as additives, or resins that exhibit adhesive properties due to the presence of triggers such as heat or water.

[0095] The adhesive layer may be either curable or non-curable, for example, energy-ray curable or non-energy-ray curable. The curable adhesive layer can easily adjust its physical properties before and after curing.

[0096] In this specification, "energy rays" refer to rays having energy quanta such as electromagnetic waves or charged particle beams. Examples of energy rays include ultraviolet rays, radiation, and electron beams. For example, ultraviolet rays can be irradiated using a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light lamp, or an LED lamp as an ultraviolet source. Electron beams can be irradiated using an electron beam generated by an electron beam accelerator or the like.

[0097] In this specification, “energy ray-curable” means a property of being cured by irradiation with energy rays, and “non-energy ray-curable” means a property of not being cured even by irradiation with energy rays.

[0098] The adhesive layer may consist of a single layer or two or more layers. When the adhesive layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0099] The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

[0100] Here, the “thickness of the adhesive layer” refers to the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of multiple layers refers to the total thickness of all layers constituting the adhesive layer.

[0101] The optical properties of the adhesive layer are not particularly limited as long as they are within a range that does not impair the effects of the present invention. For example, the adhesive layer may be one that transmits energy rays.

[0102] Next, the adhesive composition will be described.

[0103] <<Adhesive Composition>>

[0104] When the adhesive layer is energy-ray-curable, examples of adhesive compositions containing energy-ray-curable adhesives, i.e., energy-ray-curable adhesive compositions, include: adhesive compositions (I-1) containing a non-energy-ray-curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as "adhesive resin (I-1a)") and an energy-ray-curable compound; adhesive compositions (I-2) containing an energy-ray-curable adhesive resin (I-2a) (hereinafter sometimes abbreviated as "adhesive resin (I-2a)") having an unsaturated group introduced into the side chain of the non-energy-ray-curable adhesive resin (I-1a); adhesive compositions (I-3) containing the adhesive resin (I-2a) and an energy-ray-curable compound, etc.

[0105] <Adhesive composition (I-1)>

[0106] As described above, the adhesive composition (I-1) contains the non-energy ray-curable adhesive resin (I-1a) and the energy ray-curable compound.

[0107] [Adhesive resin (I-1a)]

[0108] The adhesive resin (I-1a) is preferably an acrylic resin.

[0109] Examples of the acrylic resin include acrylic polymers having at least a structural unit derived from an alkyl (meth)acrylate.

[0110] The acrylic resin may contain only one type of structural unit or two or more types. When there are two or more types, the combination and ratio of these structural units may be arbitrarily selected.

[0111] The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the two kinds can be arbitrarily selected.

[0112] In the adhesive composition (I-1), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-1).

[0113] [Energy ray curable compound]

[0114] Examples of the energy-ray curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy-ray polymerizable unsaturated group and are curable by irradiation with energy rays.

[0115] Examples of monomers in the energy-ray curable compound include polyvalent (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; and epoxy (meth)acrylate.

[0116] Examples of the oligomer in the energy ray-curable compound include oligomers obtained by polymerizing the monomers exemplified above.

[0117] The energy-beam curable compound is preferably urethane (meth)acrylate or urethane (meth)acrylate oligomer because it has a large molecular weight and is less likely to reduce the storage elastic modulus of the adhesive layer.

[0118] The energy-ray curable compound contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.

[0119] In the adhesive composition (I-1), the content of the energy ray-curable compound is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass relative to the total mass of the adhesive composition (I-1).

[0120] [Crosslinking agent]

[0121] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

[0122] The cross-linking agent reacts with the functional group to cross-link the adhesive resins (I-1a).

[0123] Examples of the cross-linking agent include isocyanate cross-linking agents (cross-linking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy cross-linking agents (cross-linking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine cross-linking agents (cross-linking agents having an aziridine group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate cross-linking agents (cross-linking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate cross-linking agents (cross-linking agents having an isocyanuric acid skeleton).

[0124] From the viewpoints of increasing the cohesive force of the adhesive and thus increasing the adhesive force of the adhesive layer, and from the viewpoints of easy availability, the crosslinking agent is preferably an isocyanate crosslinking agent.

[0125] The cross-linking agent contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the cross-linking agents may be arbitrarily selected.

[0126] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[0127] [Photopolymerization initiator]

[0128] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-1) containing a photopolymerization initiator can fully undergo a curing reaction.

[0129] Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, Acylphosphine oxide compounds; sulfides such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc.

[0130] Furthermore, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, etc. can also be used.

[0131] The photopolymerization initiator contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the photopolymerization initiators may be arbitrarily selected.

[0132] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[0133] [Other additives]

[0134] The adhesive composition (I-1) may contain other additives that are not any of the above-mentioned components within a range that does not impair the effects of the present invention.

[0135] Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, thickeners, reaction retarders, and crosslinking accelerators (catalysts).

[0136] A reaction retarder is a component used to inhibit unintended crosslinking reactions in the adhesive composition (I-1) during storage, for example, due to the action of a catalyst mixed into the adhesive composition (I-1). Examples of the reaction retarder include those that form a chelate complex with a chelate corresponding to the catalyst. More specifically, examples include those having two or more carbonyl groups (-C(=O)-) in one molecule.

[0137] The adhesive composition (I-1) may contain other additives of one kind or of two or more kinds. When the number is two or more, the combination and ratio of the additives may be arbitrarily selected.

[0138] The content of other additives in the adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type of additive.

[0139] [Solvent]

[0140] The adhesive composition (I-1) may contain a solvent. By containing a solvent, the coating suitability of the adhesive composition (I-1) on the surface to be coated is improved.

[0141] The solvent is preferably an organic solvent.

[0142] <Adhesive composition (I-2)>

[0143] As described above, the adhesive composition (I-2) contains the energy-ray-curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the non-energy-ray-curable adhesive resin (I-1a).

[0144] [Adhesive resin (I-2a)]

[0145] The adhesive resin (I-2a) can be obtained, for example, by reacting an unsaturated group-containing compound having an energy-ray-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

[0146] The unsaturated group-containing compound is a compound having, in addition to the energy-ray-polymerizable unsaturated group, a group capable of reacting with a functional group in the adhesive resin (I-1a) to thereby bond to the adhesive resin (I-1a).

[0147] Examples of the energy-beam-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl (ethylene) group, and an allyl (2-propenyl) group, and a (meth)acryloyl group is preferred.

[0148] Examples of the group capable of bonding to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group capable of bonding to a hydroxyl group or an amino group, and a hydroxyl group and an amino group capable of bonding to a carboxyl group or an epoxy group.

[0149] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0150] The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the two kinds can be arbitrarily selected.

[0151] In the adhesive composition (I-2), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass based on the total mass of the adhesive composition (I-2).

[0152] [Crosslinking agent]

[0153] For example, when the acrylic polymer having a structural unit derived from a functional group-containing monomer, which is the same as that in the adhesive resin (I-1a), is used as the adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0154] Examples of the cross-linking agent in the adhesive composition (I-2) include the same cross-linking agents as those in the adhesive composition (I-1).

[0155] The cross-linking agent contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the cross-linking agents may be arbitrarily selected.

[0156] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0157] [Photopolymerization initiator]

[0158] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-2) containing a photopolymerization initiator can fully undergo a curing reaction.

[0159] Examples of the photopolymerization initiator in the adhesive composition (I-2) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0160] The photopolymerization initiator contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the photopolymerization initiators may be arbitrarily selected.

[0161] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0162] [Other additives, solvents]

[0163] The adhesive composition (I-2) may contain other additives that are not any of the above-mentioned components within a range that does not impair the effects of the present invention.

[0164] Furthermore, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0165] Examples of the other additives and solvent in the adhesive composition (I-2) include the same additives and solvents as those in the adhesive composition (I-1).

[0166] The adhesive composition (I-2) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When the number of other additives and solvents is two or more, the combination and ratio of these additives and solvents may be arbitrarily selected.

[0167] The contents of other additives and solvents in the adhesive composition (I-2) are not particularly limited and may be appropriately selected depending on their types.

[0168] <Adhesive composition (I-3)>

[0169] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable compound.

[0170] In the adhesive composition (I-3), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-3).

[0171] [Energy ray curable compound]

[0172] Examples of the energy-ray-curable compound contained in the adhesive composition (I-3) include monomers or oligomers having an energy-ray-polymerizable unsaturated group and curable by irradiation with energy rays, and examples include the same energy-ray-curable compounds as those contained in the adhesive composition (I-1).

[0173] The energy-ray curable compound contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.

[0174] In the adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0175] [Photopolymerization initiator]

[0176] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-3) containing a photopolymerization initiator can fully undergo a curing reaction.

[0177] Examples of the photopolymerization initiator in the adhesive composition (I-3) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0178] The photopolymerization initiator contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the photopolymerization initiators may be arbitrarily selected.

[0179] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the energy ray-curable compound.

[0180] [Other additives, solvents]

[0181] The adhesive composition (I-3) may contain other additives that are not any of the above-mentioned components within a range that does not impair the effects of the present invention.

[0182] Furthermore, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0183] Examples of the other additives and solvent in the adhesive composition (I-3) include the same additives and solvents as those in the adhesive composition (I-1).

[0184] The adhesive composition (I-3) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When the number of other additives and solvents is two or more, the combination and ratio of these additives and solvents may be arbitrarily selected.

[0185] The contents of other additives and solvents in the adhesive composition (I-3) are not particularly limited and may be appropriately selected depending on their types.

[0186] <Adhesive compositions other than adhesive compositions (I-1) to (I-3)>

[0187] So far, the adhesive composition (I-1), the adhesive composition (I-2) and the adhesive composition (I-3) have been mainly described, but the components described as contained in them can also be used in all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

[0188] As adhesive compositions other than the adhesive compositions (I-1) to (I-3), in addition to energy-ray-curable adhesive compositions, non-energy-ray-curable adhesive compositions can be mentioned.

[0189] Examples of non-energy ray-curable adhesive compositions include adhesive compositions (I-4) containing non-energy ray-curable adhesive resins (I-1a) such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins. Preferred are non-energy ray-curable adhesive compositions containing acrylic resins.

[0190] It is preferred that adhesive compositions other than adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, and the content thereof can be set to the same as that of the adhesive composition (I-1) and the like.

[0191] <Adhesive composition (I-4)>

[0192] Preferred adhesive compositions (I-4) include, for example, adhesive compositions containing the adhesive resin (I-1a) and a cross-linking agent.

[0193] [Adhesive resin (I-1a)]

[0194] Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resins as those mentioned for the adhesive resin (I-1a) in the adhesive composition (I-1).

[0195] The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the two kinds can be arbitrarily selected.

[0196] In the adhesive composition (I-4), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-4).

[0197] [Crosslinking agent]

[0198] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0199] Examples of the cross-linking agent in the adhesive composition (I-4) include the same cross-linking agents as those in the adhesive composition (I-1).

[0200] The cross-linking agent contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the cross-linking agents may be arbitrarily selected.

[0201] In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, per 100 parts by mass of the adhesive resin (I-1a).

[0202] [Other additives, solvents]

[0203] The adhesive composition (I-4) may contain other additives that are not any of the above-mentioned components within a range that does not impair the effects of the present invention.

[0204] Furthermore, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0205] Examples of the other additives and solvent in the adhesive composition (I-4) include the same additives and solvents as those in the adhesive composition (I-1).

[0206] The adhesive composition (I-4) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When the number of other additives and solvents is two or more, the combination and ratio of these additives and solvents may be arbitrarily selected.

[0207] The contents of other additives and the solvent in the adhesive composition (I-4) are not particularly limited and may be appropriately selected depending on their types.

[0208] <<Method for preparing adhesive composition>>

[0209] Adhesive compositions other than adhesive compositions (I-1) to (I-3), or adhesive composition (I-4), etc., can be obtained by blending the adhesive and, as necessary, components other than the adhesive, etc., which constitute the adhesive composition.

[0210] The order of adding the components when blending them is not particularly limited, and two or more components may be added simultaneously.

[0211] When a solvent is used, the solvent may be mixed with any blending components other than the solvent to dilute the blending components before use, or the solvent may be mixed with the blending components without diluting the blending components before use.

[0212] When blending, the method for mixing the components is not particularly limited and may be appropriately selected from the following known methods: a method of mixing by rotating a stirring bar or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves, etc.

[0213] The temperature and time for adding and mixing the components are not particularly limited and may be appropriately adjusted as long as the components are not degraded. However, the temperature is preferably 15 to 30°C.

[0214] ○Intermediate layer, intermediate layer forming composition

[0215] The intermediate layer is in a sheet or film shape and contains the non-silicone resin as a main component.

[0216] The intermediate layer may be a layer containing only a non-silicone resin (a layer formed of a non-silicone resin), or may be a layer containing a non-silicone resin and a component other than the non-silicone resin.

[0217] The intermediate layer can be formed using, for example, an intermediate layer-forming composition containing the non-silicone resin. For example, the intermediate layer can be formed on the target area by applying the intermediate layer-forming composition on the target surface and drying it as needed.

[0218] In the intermediate layer, the total content of one or two or more components described below in the intermediate layer does not exceed 100% by mass based on the total mass of the intermediate layer.

[0219] Similarly, in the intermediate layer forming composition, the total content of one or two or more components described below contained in the intermediate layer forming composition does not exceed 100% by mass based on the total mass of the intermediate layer forming composition.

[0220] The intermediate layer forming composition can be applied by the same method as the above-mentioned adhesive composition application.

[0221] The drying conditions of the intermediate layer-forming composition are not particularly limited. When the intermediate layer-forming composition contains a solvent described below, it is preferably dried by heating. In this case, for example, drying is preferably performed at 60 to 130° C. for 1 to 6 minutes.

[0222] The weight average molecular weight of the non-silicone resin is 100,000 or less.

[0223] To further improve the semiconductor wafer dividing suitability of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicone resin may be, for example, within any range of 80,000 or less, 60,000 or less, and 40,000 or less.

[0224] The lower limit of the weight average molecular weight of the non-silicone resin is not particularly limited. For example, the non-silicone resin having a weight average molecular weight of 5,000 or more is more readily available.

[0225] The weight average molecular weight of the non-silicone resin can be appropriately adjusted within a range defined by any combination of the above lower limit and any upper limit. For example, in one embodiment, the weight average molecular weight can be any range of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

[0226] In this embodiment, “the intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component” means “the intermediate layer contains the non-silicone resin in an amount sufficient to fully demonstrate the effect of the intermediate layer containing the non-silicone resin having a weight-average molecular weight of 100,000 or less.” From this perspective, in the intermediate layer, the ratio of the non-silicone resin content to the total mass of the intermediate layer (in other words, the ratio of the non-silicone resin content to the total content of all components excluding the solvent in the intermediate layer-forming composition) is preferably 80% by mass or more, more preferably 90% by mass or more, and can be, for example, any of 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0227] On the other hand, the ratio is 100% by mass or less.

[0228] The non-silicone resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component having no silicon atoms as constituent atoms and a weight average molecular weight of 100,000 or less.

[0229] The non-silicone resin may be, for example, a polar resin having a polar group or a non-polar resin having no polar group.

[0230] For example, the non-silicone resin is preferably a polar resin because of its high solubility in the intermediate layer-forming composition and the improved coating suitability of the intermediate layer-forming composition.

[0231] In this specification, unless otherwise specified, the "non-silicone resin" refers to a non-silicone resin having a weight average molecular weight of 100,000 or less.

[0232] The non-silicone resin may be, for example, a homopolymer that is a polymer of one monomer (in other words, having only one structural unit), or a copolymer that is a polymer of two or more monomers (in other words, having two or more structural units).

[0233] Examples of the polar group include a carbonyloxy group (—C(═O)—O—) and an oxycarbonyl group (—OC(═O)—).

[0234] The polar resin may have only a structural unit having a polar group, or may have both a structural unit having a polar group and a structural unit not having a polar group.

[0235] Examples of the structural unit having the polar group include a structural unit derived from vinyl acetate.

[0236] Examples of the structural unit having no polar group include a structural unit derived from ethylene.

[0237] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all the structural units is preferably 5 to 70% by mass, for example, it may also be any range of 7.5 to 55% by mass and 10 to 40% by mass. In other words, in the polar resin, the ratio of the mass of the structural unit not having a polar group to the total mass of all the structural units is preferably 30 to 95% by mass, for example, it may also be any range of 45 to 92.5% by mass and 60 to 90% by mass. By making the ratio of the mass of the structural unit having a polar group above the lower limit, the polar resin more significantly has this characteristic of having a polar group. By making the ratio of the mass of the structural unit having a polar group below the upper limit, the polar resin more moderately has this characteristic of not having a polar group.

[0238] Examples of the polar resin include ethylene vinyl acetate copolymer and the like.

[0239] Preferred polar resins include, for example, those in which the ratio of the mass of structural units derived from vinyl acetate relative to the total mass of all structural units in an ethylene-vinyl acetate copolymer (sometimes referred to as "the content of structural units derived from vinyl acetate" in this specification) is 10 to 40% by mass. In other words, preferred polar resins include, for example, those in which the ratio of the mass of structural units derived from ethylene relative to the total mass of all structural units in an ethylene-vinyl acetate copolymer is 60 to 90% by mass.

[0240] Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

[0241] The non-silicone resin contained in the intermediate layer-forming composition and the intermediate layer may be one type or two or more types. When two or more types are used, the combination and ratio of the non-silicone resins may be arbitrarily selected.

[0242] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins, or may contain one or more non-silicone resins as non-polar resins and no non-silicone resins as polar resins, or may contain one or more non-silicone resins as polar resins and one or more non-silicone resins as non-polar resins at the same time.

[0243] The intermediate layer-forming composition and the intermediate layer preferably contain at least a non-silicone resin as a polar resin.

[0244] In the intermediate layer-forming composition and the intermediate layer, the content of the non-silicone resin as a polar resin relative to the total content of the non-silicone resin is preferably 80% by mass or greater, more preferably 90% by mass or greater, and may be, for example, 95% by mass or greater, 97% by mass or greater, or 99% by mass or greater. By setting the content to be greater than the lower limit, the effects of using the polar resin can be more significantly achieved.

[0245] On the other hand, the ratio is 100% by mass or less.

[0246] That is, in the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the non-silicone resin as the non-polar resin to the total content of the non-silicone resin is preferably 20% by mass or less, more preferably 10% by mass or less, for example, it can be any range of 5% by mass or less, 3% by mass or less and 1% by mass or less.

[0247] On the other hand, the ratio is 0% by mass or more.

[0248] From the perspective of good operability of the intermediate layer forming composition, the intermediate layer forming composition preferably contains a solvent in addition to the non-silicone resin, and may also contain a component that is neither the non-silicone resin nor the solvent (sometimes referred to as "additive" in this specification).

[0249] The intermediate layer may contain only the non-silicone resin, or may contain both the non-silicone resin and the additive.

[0250] The additive may be any of a resin component (in this specification, sometimes referred to as “other resin components”) and a non-resin component.

[0251] Examples of the other resin components include non-silicone resins and silicone resins having a weight average molecular weight (Mw) greater than 100,000 (Mw>100,000).

[0252] The non-silicone resin having a weight average molecular weight of greater than 100,000 is not particularly limited as long as it satisfies the above conditions.

[0253] As described below, the intermediate layer containing the silicone resin facilitates pickup of the semiconductor chip with the film-like adhesive.

[0254] The silicone resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

[0255] Preferred silicone resins include, for example, resin components that exhibit a release effect on adhesive components, and more preferably, siloxane resins (also referred to as resin components having a siloxane bond (—Si—O—Si—) or siloxane compounds).

[0256] Examples of the siloxane-based resin include polydialkylsiloxane and the like.

[0257] The alkyl group of the polydialkylsiloxane preferably has 1 to 20 carbon atoms.

[0258] In the polydialkylsiloxane, the two alkyl groups bonded to one silicon atom may be the same or different. When the two alkyl groups bonded to one silicon atom are different, the combination of the two alkyl groups is not particularly limited.

[0259] Examples of the polydialkylsiloxane include polydimethylsiloxane.

[0260] The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

[0261] The intermediate layer-forming composition and the intermediate layer may contain only one type of additive or two or more types of additives. When two or more types of additives are contained, the combination and ratio of the additives may be arbitrarily selected.

[0262] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more resin components as the additive and no non-resin components, may contain one or more non-resin components as the additive and no resin components, or may contain one or more resin components and one or more non-resin components as the additive.

[0263] When the intermediate layer forming composition and the intermediate layer contain the additive, in the intermediate layer, the ratio of the content of the non-silicone resin to the total mass of the intermediate layer (in other words, in the intermediate layer forming composition, the ratio of the content of the non-silicone resin to the total content of all components excluding the solvent) is preferably 90 to 99.99 mass%, for example, it can be any range of 90 to 97.5 mass%, 90 to 95 mass% and 90 to 92.5 mass%, can be any range of 92.5 to 99.99 mass%, 95 to 99.99 mass% and 97.5 to 99.99 mass%, and can be 92.5 to 97.5 mass%.

[0264] When the intermediate layer forming composition and the intermediate layer contain the additive, the ratio of the content of the additive to the total mass of the intermediate layer in the intermediate layer (in other words, the ratio of the content of the additive to the total content of all components excluding the solvent in the intermediate layer forming composition) is preferably 0.01 to 10 mass%, for example, it can be any range of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, can be any range of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%, and can be 2.5 to 7.5 mass%.

[0265] The solvent contained in the composition for forming the intermediate layer is not particularly limited, but preferred solvents include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, etc.

[0266] The intermediate layer-forming composition may contain only one type of solvent or two or more types of solvent. When the composition contains two or more types of solvent, the combination and ratio of the solvents may be arbitrarily selected.

[0267] The solvent contained in the intermediate layer forming composition is preferably tetrahydrofuran or the like, from the viewpoint of being able to more uniformly mix the components contained in the intermediate layer forming composition.

[0268] The content of the solvent in the intermediate layer forming composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent, for example.

[0269] As described below, from the point of view of being able to more easily pick up a semiconductor chip with a film-like adhesive, a preferred intermediate layer, for example, can be listed as follows: an intermediate layer containing an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicone resin) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges, and the ratio of the content of the siloxane compound (the additive) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges.

[0270] Examples of such an intermediate layer include an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the ethylene-vinyl acetate copolymer content in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the siloxane compound content in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only one preferred example of an intermediate layer.

[0271] A more preferred intermediate layer includes, for example, an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the ratio of the mass of the structural units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total mass of all structural units (in other words, the content of the structural units derived from vinyl acetate) is 10 to 40% by mass, the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only one more preferred example of an intermediate layer.

[0272] The surface of the film-like adhesive layer of the intermediate layer (for example, at the bottom of the sheet for semiconductor device manufacturing) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification). Figure 1 When analyzing the first surface 13a of the intermediate layer 13, the ratio of the silicon concentration (sometimes referred to simply as "silicon concentration ratio" in this specification) relative to the total concentration of carbon, oxygen, nitrogen, and silicon is preferably 1 to 20% on a molar basis of the elements. As described below, by using a sheet for manufacturing a semiconductor device having such an intermediate layer, it is possible to easily pick up a semiconductor chip with a film-like adhesive.

[0273] For XPS analysis, an X-ray photoelectron spectroscopy analyzer can be used with an X-ray irradiation angle of 45° and an X-ray beam diameter of XPS analysis was performed on the film-like adhesive side surface of the intermediate layer to be analyzed under the condition of an output of 4.5 W.

[0274] The ratio of the silicon concentration can be calculated using the following formula.

[0275] [Measured value of silicon concentration based on XPS analysis (atomic%)] / {[Measured value of carbon concentration based on XPS analysis (atomic%)]+[Measured value of oxygen concentration based on XPS analysis (atomic%)]+[Measured value of nitrogen concentration based on XPS analysis (atomic%)]+[Measured value of silicon concentration based on XPS analysis (atomic%)]}×100

[0276] From the perspective of making the above-mentioned effects more significant, the ratio of the silicon concentration can be, on a molar basis of the element, for example, in any range of 4 to 20%, 8 to 20% and 12 to 20%, or in any range of 1 to 16%, 1 to 12% and 1 to 8%, or in any range of 4 to 16% and 8 to 12%.

[0277] When performing XPS analysis in the above manner, other elements that are not carbon, oxygen, nitrogen, or silicon may sometimes be detected in the surface of the intermediate layer (the surface analyzed by XPS). However, even if these other elements are detected, their concentrations are generally very low. Therefore, when calculating the silicon concentration ratio, the silicon concentration ratio can be calculated with high accuracy by using the measured values ​​of the carbon, oxygen, nitrogen, and silicon concentrations.

[0278] The intermediate layer may consist of one layer (single layer) or two or more layers. When consisting of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

[0279] As described above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

[0280] The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer can be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers having a maximum width of 150 mm, 200 mm, or 300 mm in a direction parallel to the surface of the sheet affixed to the semiconductor device manufacturing sheet. However, as described above, after cutting with the formation of a modified layer in the semiconductor wafer, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet, as described below, the plurality of semiconductor chips (semiconductor chip groups) after cutting are gathered together, and a semiconductor device manufacturing sheet is affixed to these semiconductor chips.

[0281] In this specification, unless otherwise specified, "the width of the intermediate layer" refers to, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer having a circular planar shape, the maximum width of the intermediate layer is the diameter of the circle having the planar shape.

[0282] This is also true for semiconductor wafers. That is, the “width of the semiconductor wafer” refers to

[0283] "The width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer attached to the sheet for manufacturing semiconductor devices." For example, in the case of a semiconductor wafer having a circular planar shape, the maximum width of the semiconductor wafer is the diameter of the circle having the planar shape.

[0284] The maximum value of the width of the intermediate layer of 150 to 160 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0285] Likewise, the maximum value of the width of the intermediate layer of 200 to 210 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 200 mm within a range of not more than 10 mm.

[0286] Likewise, the maximum value of the width of the intermediate layer of 300 to 310 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 300 mm within a range of not more than 10 mm.

[0287] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0 to 10 mm.

[0288] The thickness of the intermediate layer can be appropriately selected depending on the intended purpose, preferably ranging from 5 to 150 μm, more preferably from 5 to 120 μm. For example, it can be in the range of 10 to 90 μm or 10 to 60 μm, or in the range of 30 to 120 μm or 60 to 120 μm. By setting the thickness of the intermediate layer to be greater than the lower limit, the structure of the intermediate layer is more stable. By setting the thickness of the intermediate layer to be less than the upper limit, the film adhesive can be more easily cut during blade dicing and during the expansion of the semiconductor device manufacturing sheet.

[0289] Here, the “thickness of the intermediate layer” refers to the thickness of the entire intermediate layer. For example, the thickness of an intermediate layer composed of a plurality of layers refers to the total thickness of all layers constituting the intermediate layer.

[0290] When the interlayer contains the aforementioned silicone resin, particularly when the silicone resin has low compatibility with the aforementioned non-silicone resin as a primary component, the silicone resin in the interlayer tends to be unevenly distributed on both surfaces (the first surface and the surface opposite to the first surface) and the surrounding areas of the interlayer in the semiconductor device manufacturing sheet. Furthermore, the stronger this tendency, the easier it is for the film adhesive adjacent to (in direct contact with) the interlayer to peel from the interlayer, making it easier to pick up semiconductor chips with the film adhesive attached, as described below.

[0291] For example, when comparing intermediate layers that are different only in thickness but identical in composition, area of ​​the two sides, etc., in aspects other than thickness, the ratio (mass %) of the content of silicone resin relative to the total mass of the intermediate layer in these intermediate layers is the same. However, the content (mass parts) of silicone resin in the intermediate layer is greater in the thicker intermediate layer than in the thinner intermediate layer. Therefore, when silicone resin is prone to being unevenly present in the intermediate layer as described above, the amount of silicone resin unevenly present on both sides (the first side and the side opposite to the first side) and its vicinity in the thicker intermediate layer is greater than that in the thinner intermediate layer. Therefore, even without changing the ratio, the pick-up suitability of the semiconductor chip with film-like adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by thickening the thickness of the intermediate layer in the semiconductor device manufacturing sheet, it is possible to more easily pick up the semiconductor chip with film-like adhesive.

[0292] ○Film adhesive

[0293] The film adhesive has curing properties, preferably thermosetting properties, and preferably pressure-sensitive adhesive properties. The film adhesive having both thermosetting and pressure-sensitive adhesive properties can be attached to various adherends by gently pressing in an uncured state. In addition, the film adhesive can also be an adhesive that can be attached to various adherends by softening by heating. The film adhesive is cured to ultimately form a cured product with high impact resistance, which can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

[0294] When looking down at the semiconductor device manufacturing sheet from above, the area of ​​the film adhesive (i.e., the area of ​​the first surface) is preferably set to be smaller than the area of ​​the substrate (i.e., the area of ​​the first surface) and the area of ​​the adhesive layer (i.e., the area of ​​the first surface) in a manner close to the area of ​​the semiconductor wafer before segmentation. In such a semiconductor device manufacturing sheet, a portion of the first surface of the adhesive layer has an area that is not in contact with the intermediate layer and the film adhesive (i.e., the non-laminated area). As a result, the expansion of the semiconductor device manufacturing sheet becomes easier, and the force applied to the film adhesive during expansion is not dispersed, making it easier to cut the film adhesive.

[0295] The film-like adhesive can be formed using an adhesive composition containing its constituent materials. For example, the film-like adhesive can be formed on the target area by applying the adhesive composition to the target surface and drying it as needed.

[0296] In the film-like adhesive, the total content of one or two or more components described below contained in the film-like adhesive does not exceed 100% by mass based on the total mass of the film-like adhesive.

[0297] Similarly, in the adhesive composition, the total content of one or two or more components described below in the adhesive composition does not exceed 100% by mass relative to the total mass of the adhesive composition.

[0298] The adhesive composition can be applied by the same method as the above-mentioned pressure-sensitive adhesive composition.

[0299] The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, for example, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes.

[0300] The film adhesive may consist of a single layer or two or more layers. When consisting of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0301] As described above, the maximum width of the film-like adhesive is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate.

[0302] The maximum width of the film adhesive relative to the size of the semiconductor wafer may be the same as the maximum width of the intermediate layer described above.

[0303] That is, the maximum width of the film adhesive can be appropriately selected based on the size of the semiconductor wafer. For example, the maximum width of the film adhesive can be 150-160 mm, 200-210 mm, or 300-310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in a direction parallel to the surface attached to the semiconductor device manufacturing sheet.

[0304] In this specification, unless otherwise specified, the term "width of a film adhesive" refers to, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive having a circular planar shape, the maximum width of the film adhesive is the diameter of the circle having the planar shape.

[0305] In addition, unless otherwise specified, the "width of the film adhesive" refers to the "width of the film adhesive before cutting (uncut)", and does not refer to the width of the film adhesive after cutting during the manufacturing process of the semiconductor chip with film adhesive described later.

[0306] The maximum width of the film adhesive of 150 to 160 mm means that the maximum width is equal to or greater than the maximum width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0307] Likewise, the maximum width of the film adhesive of 200 to 210 mm means that the maximum width of the semiconductor wafer is equal to or greater than 200 mm within a range of not more than 10 mm.

[0308] Likewise, the maximum width of the film adhesive of 300 to 310 mm means a maximum width equal to or greater than 300 mm of the semiconductor wafer within a range of not more than 10 mm.

[0309] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm.

[0310] In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film-like adhesive may both be within any of the above numerical ranges.

[0311] That is, as an example of the semiconductor device manufacturing sheet of this embodiment, a semiconductor device manufacturing sheet in which the maximum width of the intermediate layer and the maximum width of the film adhesive are both 150-160 mm, 200-210 mm, or 300-310 mm can be listed.

[0312] The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. By making the thickness of the film adhesive above the lower limit, a higher adhesive force to the adherend (semiconductor chip) can be obtained. By making the thickness of the film adhesive below the upper limit, the film adhesive can be more easily cut when performing blade cutting and when performing the expansion of the semiconductor device manufacturing sheet.

[0313] Here, the “thickness of the film adhesive” refers to the thickness of the entire film adhesive. For example, the thickness of a film adhesive composed of multiple layers refers to the total thickness of all layers constituting the film adhesive.

[0314] Next, the adhesive composition will be described.

[0315] <<Adhesive Composition>>

[0316] Preferred adhesive compositions include, for example, adhesive compositions containing a polymer component (a) and a thermosetting component (b).

[0317] In addition, the adhesive composition shown below is only a preferred example, and the adhesive composition of this embodiment is not limited to the adhesive composition shown below.

[0318] [Polymer component (a)]

[0319] The polymer component (a) is considered to be a component formed by a polymerization reaction of a polymerizable compound. It is a polymer compound that imparts film-forming properties and flexibility to the film-like adhesive, and improves adhesion (in other words, adhesion) to the object to be bonded, such as a semiconductor chip. The polymer component (a) has thermoplastic properties but does not have thermosetting properties. In this specification, the polymer compound also includes products of condensation polymerization reactions.

[0320] The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the polymer components can be arbitrarily selected.

[0321] Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins.

[0322] Among them, the polymer component (a) is preferably an acrylic resin.

[0323] In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components excluding the solvent (i.e., the ratio of the content of the polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 to 75% by mass, more preferably 30 to 65% by mass.

[0324] [Thermosetting component (b)]

[0325] The thermosetting component (b) is a component having thermosetting properties and used to thermally cure the film-like adhesive.

[0326] The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the thermosetting components (b) may be arbitrarily selected.

[0327] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.

[0328] Among them, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0329] ○Epoxy thermosetting resin

[0330] The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2).

[0331] The epoxy thermosetting resin contained in the adhesive composition and the film adhesive may be one type or two or more types. When two or more types are used, the combination and ratio of the epoxy thermosetting resins may be arbitrarily selected.

[0332] Epoxy resin (b1)

[0333] As the epoxy resin (b1), known epoxy resins can be listed, for example, epoxy compounds with two or more functionalities such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin can be listed.

[0334] As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The compatibility of epoxy resins having an unsaturated hydrocarbon group with acrylic resins is greater than the compatibility of epoxy resins without unsaturated hydrocarbon groups with acrylic resins. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using a film adhesive is improved.

[0335] The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the epoxy resins may be arbitrarily selected.

[0336] Thermal curing agent (b2)

[0337] The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

[0338] Examples of the thermosetting agent (b2) include compounds having two or more functional groups reactive with epoxy groups in one molecule. Examples of the functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydriding acid groups. Phenolic hydroxyl groups, amino groups, and groups formed by anhydriding acid groups are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0339] Examples of the phenolic curing agent having a phenolic hydroxyl group in the thermosetting agent (b2) include polyfunctional phenol resins, biphenol, novolac-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins.

[0340] Examples of the amine curing agent having an amino group in the thermosetting agent (b2) include dicyandiamide (DICY) and the like.

[0341] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0342] The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the thermosetting agent (b2) may be arbitrarily selected.

[0343] In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1), for example, it can be any range of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By making the content of the thermosetting agent (b2) above the lower limit, it is easier to cure the film adhesive. By making the content of the thermosetting agent (b2) below the upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further increased.

[0344] In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, relative to 100 parts by mass of the polymer component (a). For example, it can be in the range of 5 to 35 parts by mass or 5 to 20 parts by mass. By setting the content of the thermosetting component (b) within the above range, the peeling force between the intermediate layer and the film-like adhesive is further stabilized.

[0345] In order to improve various physical properties of the film adhesive, the adhesive composition and the film adhesive may further contain other components other than the polymer component (a) and the thermosetting component (b) as needed in addition to the polymer component (a) and the thermosetting component (b).

[0346] Preferred components among other components contained in the adhesive composition and film-like adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a cross-linking agent (f), an energy-ray curable resin (g), a photopolymerization initiator (h), and a general additive (i).

[0347] [Curing accelerator (c)]

[0348] The curing accelerator (c) is a component for adjusting the curing speed of the adhesive composition.

[0349] Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphoniumtetraphenylborate and triphenylphosphinetetraphenylborate.

[0350] The adhesive composition and the film-like adhesive may contain only one type of curing accelerator (c), or two or more types. When two or more types are used, the combination and ratio of the curing accelerators may be arbitrarily selected.

[0351] When using a curing accelerator (c), in the adhesive composition and the film adhesive, the content of the curing accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (b). By making the content of the curing accelerator (c) above the lower limit, the effect of using the curing accelerator (c) can be more significantly obtained. By making the content of the curing accelerator (c) below the upper limit, for example, the effect of suppressing the high-polarity curing accelerator (c) from moving to the bonding interface side with the adherend in the film adhesive under high temperature and high humidity conditions and segregating becomes higher, and the reliability of the package obtained using the film adhesive is further improved.

[0352] [Filling material (d)]

[0353] By including a filler (d) in the film adhesive, the film adhesive's shearing properties due to expansion are further enhanced. Furthermore, by including a filler (d) in the film adhesive, the film adhesive's coefficient of thermal expansion is easily adjusted. By optimizing the coefficient of thermal expansion for the object to which the film adhesive is attached, the reliability of the package obtained using the film adhesive is further enhanced. Furthermore, by including a filler (d) in the film adhesive, the moisture absorption rate of the cured film adhesive can be reduced, or heat dissipation properties can be improved.

[0354] The filler (d) may be any of an organic filler and an inorganic filler, and is preferably an inorganic filler.

[0355] Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by sphericalizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc.

[0356] Among them, the inorganic filler is preferably silica or alumina.

[0357] The filler (d) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the fillers may be arbitrarily selected.

[0358] When a filler (d) is used, the ratio of the content of the filler (d) to the total content of all components excluding the solvent in the adhesive composition (i.e., the ratio of the content of the filler (d) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. By setting the ratio within the above range, the effect of using the filler (d) can be more significantly achieved.

[0359] [Coupling agent (e)]

[0360] By including a coupling agent (e) in the film adhesive, the film adhesive's adhesion and tightness to the adherend are improved. Furthermore, by including a coupling agent (e) in the film adhesive, the water resistance of the cured film adhesive is improved without compromising heat resistance. The coupling agent (e) has a functional group that can react with an inorganic compound or an organic compound.

[0361] The coupling agent (e) is preferably a compound having a functional group that can react with a functional group possessed by the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

[0362] The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the coupling agents can be arbitrarily selected.

[0363] When a coupling agent (e) is used, the content of the coupling agent (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b) in the adhesive composition and the film adhesive. By making the content of the coupling agent (e) above the lower limit, the effects of using the coupling agent (e), i.e., improving the dispersibility of the filler (d) in the resin, improving the adhesion between the film adhesive and the adherend, etc., can be more significantly obtained. By making the content of the coupling agent (e) below the upper limit, the generation of outgassing can be further suppressed.

[0364] [Crosslinking agent (f)]

[0365] When a material having functional groups such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, or an isocyanate group capable of bonding with other compounds, such as the acrylic resin described above, is used as the polymer component (a), the adhesive composition and the film adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component used to bond and crosslink the functional groups in the polymer component (a) with other compounds. By crosslinking in this manner, the initial adhesive strength and cohesive strength of the film adhesive can be adjusted.

[0366] Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

[0367] When an organic polyisocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film adhesive through the reaction between the crosslinking agent (f) and the polymer component (a).

[0368] The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the crosslinking agents can be arbitrarily selected.

[0369] When a crosslinking agent (f) is used, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a) in the adhesive composition. By setting the content of the crosslinking agent (f) to be greater than the lower limit, the effect of using the crosslinking agent (f) can be more significantly achieved. By setting the content of the crosslinking agent (f) to be less than the upper limit, excessive use of the crosslinking agent (f) can be suppressed.

[0370] [Energy ray curable resin (g)]

[0371] By containing the energy ray-curable resin (g) in the adhesive composition and the film-like adhesive, the properties of the film-like adhesive can be changed by irradiation with energy rays.

[0372] The energy-beam-curable resin (g) is a resin obtained from an energy-beam-curable compound.

[0373] Examples of the energy-ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

[0374] The energy-ray curable resin (g) contained in the adhesive composition may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0375] When an energy-ray curable resin (g) is used, the content of the energy-ray curable resin (g) in the adhesive composition is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass relative to the total mass of the adhesive composition.

[0376] [Photopolymerization initiator (h)]

[0377] When the adhesive composition and the film-like adhesive contain the energy-ray curable resin (g), they may contain a photopolymerization initiator (h) in order to efficiently advance the polymerization reaction of the energy-ray curable resin (g).

[0378] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; and phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. Acylphosphine oxide compounds; sulfides such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

[0379] Examples of the photopolymerization initiator (h) include photosensitizers such as amines.

[0380] The photopolymerization initiator (h) contained in the adhesive composition may be only one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these can be arbitrarily selected.

[0381] When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable resin (g) in the adhesive composition.

[0382] [General additives (i)]

[0383] The general additive (i) may be a known additive and can be arbitrarily selected according to the purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and gettering agents.

[0384] The adhesive composition and the film-like adhesive may contain only one kind of the general-purpose additive (i), or two or more kinds of the general-purpose additive (i). When two or more kinds of the general-purpose additive (i) are used, the combination and ratio thereof may be arbitrarily selected.

[0385] The content of the adhesive composition and the film-like adhesive is not particularly limited and may be appropriately selected depending on the intended purpose.

[0386] [Solvent]

[0387] The adhesive composition preferably further contains a solvent. A adhesive composition containing a solvent improves handleability.

[0388] The solvent is not particularly limited, but preferred solvents include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

[0389] The adhesive composition may contain only one type of solvent or two or more types of solvent. When the solvent is two or more types, the combination and ratio of the solvents may be arbitrarily selected.

[0390] From the viewpoint of being able to more uniformly mix the components contained in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

[0391] The content of the solvent in the adhesive composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent, for example.

[0392] <<Method for producing adhesive composition>>

[0393] The adhesive composition can be obtained by blending the respective components for constituting the adhesive composition.

[0394] For example, the adhesive composition can be prepared by the same method as that of the adhesive composition described above, except that the types of the blended components are different.

[0395] ◇Method for manufacturing a sheet for semiconductor device manufacturing

[0396] The semiconductor device manufacturing sheet can be manufactured by stacking the above-mentioned layers so that the layers are in a corresponding positional relationship. The method of forming the layers is the same as described above.

[0397] For example, the sheet for manufacturing a semiconductor device can be produced by separately preparing a base material, an adhesive layer, an intermediate layer, and a film adhesive, and laminating and stacking them in this order.

[0398] However, this is only one example of a method for manufacturing a sheet for manufacturing a semiconductor device.

[0399] The semiconductor device manufacturing sheet can also be manufactured, for example, by pre-fabricating two or more intermediate laminates composed of a plurality of layers stacked together to form the semiconductor device manufacturing sheet, and laminating these intermediate laminates to each other. The composition of the intermediate laminate can be appropriately selected. For example, a first intermediate laminate (equivalent to the support sheet) having a structure formed by laminating a substrate and an adhesive layer, and a second intermediate laminate having a structure formed by laminating an intermediate layer and a film-like adhesive can be pre-fabricated, and the adhesive layer in the first intermediate laminate is laminated to the intermediate layer in the second intermediate laminate, thereby manufacturing the semiconductor device manufacturing sheet.

[0400] However, this is only one example of a method for manufacturing a sheet for manufacturing a semiconductor device.

[0401] As the sheet for manufacturing the semiconductor device, for example, Figure 1 In the case of a sheet for manufacturing a semiconductor device in which the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film adhesive are both smaller than the area of ​​the first surface of the adhesive layer and the first surface of the substrate, a step of processing the intermediate layer and the film adhesive to the target size can be added at any stage in the above-mentioned manufacturing method. For example, a sheet for manufacturing a semiconductor device can be manufactured by adding a step of processing the intermediate layer and the film adhesive in the second intermediate laminate to the target size in the manufacturing method using the second intermediate laminate.

[0402] When manufacturing a sheet for manufacturing semiconductor devices having a release film on a film-like adhesive, for example, the film-like adhesive can be formed on the release film and the remaining layers can be laminated while maintaining this state. Alternatively, after laminating the substrate, adhesive layer, intermediate layer, and film-like adhesive, the release film can be laminated on the film-like adhesive to manufacture the sheet for manufacturing semiconductor devices. The release film can be removed at a necessary stage before using the sheet for manufacturing semiconductor devices.

[0403] A sheet for manufacturing a semiconductor device having another layer other than the substrate, pressure-sensitive adhesive layer, intermediate layer, film-like adhesive, and release film can be manufactured by adding a step of forming and laminating the other layer at an appropriate time in the above-mentioned manufacturing method.

[0404] Preferred examples of the semiconductor device manufacturing sheet according to this embodiment include:

[0405] A sheet for manufacturing a semiconductor device comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0406] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate in this order.

[0407] The intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component,

[0408] The intermediate layer contains at least a polar resin as the non-silicone resin.

[0409] In the intermediate layer, the content of the non-silicone resin relative to the total mass of the intermediate layer is in any range of 80 mass % or more, 90 mass % or more, 95 mass % or more, 97 mass % or more, and 99 mass % or more.

[0410] In the intermediate layer, the content of the non-silicone resin, which is the polar resin, relative to the total content of the non-silicone resin is in any range of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0411] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is in any one of the ranges of 5 to 70 mass %, 7.5 to 55 mass %, and 10 to 40 mass %.

[0412] Another preferred example of the semiconductor device manufacturing sheet of this embodiment includes:

[0413] A sheet for manufacturing a semiconductor device comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0414] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate in this order.

[0415] The intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component,

[0416] The intermediate layer contains at least a polar resin as the non-silicone resin.

[0417] In the intermediate layer, the content of the non-silicone resin is any one of 80 mass % or more, 90 mass % or more, 95 mass % or more, 97 mass % or more, and 99 mass % or more relative to the total mass of the intermediate layer.

[0418] In the intermediate layer, the content of the non-silicone resin, which is the polar resin, relative to the total content of the non-silicone resin is in any range of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0419] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is any one of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%.

[0420] When the film adhesive side surface of the intermediate layer is analyzed by X-ray photoelectron spectroscopy, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is in any range of 1-20%, 4-16% and 8-12%.

[0421] Another preferred example of the semiconductor device manufacturing sheet of this embodiment includes:

[0422] A sheet for manufacturing a semiconductor device comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0423] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0424] The intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component, and further contains a silicone resin.

[0425] The intermediate layer contains at least a polar resin as the non-silicone resin.

[0426] In the intermediate layer, the content of the non-silicone resin relative to the total mass of the intermediate layer is in any range of 90 to 99.99 mass %, 90 to 97.5 mass %, 90 to 95 mass % and 90 to 92.5 mass %.

[0427] In the intermediate layer, the content of the silicone resin relative to the total mass of the intermediate layer is in any one of the ranges of 0.01 to 10 mass %, 2.5 to 10 mass %, 5 to 10 mass % and 7.5 to 10 mass %.

[0428] Wherein, in the intermediate layer, the total content of the non-silicone resin and the silicone resin relative to the total mass of the intermediate layer does not exceed 100% by mass.

[0429] In the intermediate layer, the content of the non-silicone resin, which is the polar resin, relative to the total content of the non-silicone resin is in any range of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0430] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is in any one of the ranges of 5 to 70 mass %, 7.5 to 55 mass %, and 10 to 40 mass %.

[0431] Another preferred example of the semiconductor device manufacturing sheet of this embodiment includes:

[0432] A sheet for manufacturing a semiconductor device comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0433] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate in this order.

[0434] The intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component, and further contains a silicone resin.

[0435] The intermediate layer contains at least a polar resin as the non-silicone resin.

[0436] In the intermediate layer, the content of the non-silicone resin relative to the total mass of the intermediate layer is in any range of 90 to 99.99 mass %, 90 to 97.5 mass %, 90 to 95 mass % and 90 to 92.5 mass %.

[0437] In the intermediate layer, the content of the silicone resin relative to the total mass of the intermediate layer is in any one of the ranges of 0.01 to 10 mass %, 2.5 to 10 mass %, 5 to 10 mass % and 7.5 to 10 mass %.

[0438] Wherein, in the intermediate layer, the total content of the non-silicone resin and the silicone resin relative to the total mass of the intermediate layer does not exceed 100% by mass.

[0439] In the intermediate layer, the content of the non-silicone resin, which is the polar resin, relative to the total content of the non-silicone resin is in any range of 80% by mass or more, 90% by mass or more, 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0440] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is in any range of 5 to 70 mass%, 7.5 to 55 mass%, and 10 to 40 mass%.

[0441] The thickness of the intermediate layer is in any range of 5 to 150 μm, 5 to 120 μm, 30 to 120 μm, and 60 to 120 μm.

[0442] ◇How to use a sheet for manufacturing semiconductor devices (Method for manufacturing semiconductor chips with film-like adhesive)

[0443] The sheet for manufacturing a semiconductor device can be used when manufacturing a semiconductor chip with a film-like adhesive in a process of manufacturing a semiconductor device.

[0444] Hereinafter, a method of using the sheet for manufacturing a semiconductor device (a method of manufacturing a semiconductor chip with a film-like adhesive) will be described in detail with reference to the drawings.

[0445] Figure 3A 、 Figure 3B and Figure 3C This is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet, which shows a case where the semiconductor device manufacturing sheet is attached to a semiconductor wafer and then used. In this method, the semiconductor device manufacturing sheet is used as a dicing wafer. Here, Figure 1 Taking the semiconductor device manufacturing sheet 101 shown as an example, a method of using the sheet will be described.

[0446] First, if Figure 3A As shown, the sheet 101 for semiconductor device manufacturing, from which the release film 15 is removed, is heated while the film-like adhesive 14 therein is attached to the back surface 9 b ′ of the semiconductor wafer 9 ′.

[0447] Reference numeral 9 a ′ denotes a circuit formation surface of the semiconductor wafer 9 ′.

[0448] The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40 to 70° C. from the viewpoint of further improving the heat-attachment stability of the semiconductor device manufacturing sheet 101 .

[0449] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is 13 The maximum value of the film adhesive 14 and the width W 14 The maximum values ​​are all equal to the width W of the semiconductor wafer 9' 9’ The maximum values ​​are exactly the same, or different but with slight errors to almost the same.

[0450] For example, when the width W of the semiconductor wafer 9 ′ 9’ When the maximum value is 150 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value is preferably 150 to 160 mm. When the width W of the semiconductor wafer 9' is 9’ When the maximum value is 200 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value of is preferably 200 to 210 mm. When the width W of the semiconductor wafer 9' is 9’When the maximum value is 300 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value is preferably 300 to 310 mm.

[0451] Thus, in this embodiment, the width W of the intermediate layer 13 is 13 The maximum value is related to the width W of the semiconductor wafer 9' 9’ The difference between the maximum values ​​of and the width W of the film adhesive 14 14 The maximum value is related to the width W of the semiconductor wafer 9' 9’ The difference in the maximum value can be 0 to 10 mm.

[0452] Here, the width W of the semiconductor wafer 9 ′ 9’ For example, it refers to the width of the semiconductor wafer 9 ′ in a direction parallel to the back surface 9 b ′ thereof.

[0453] Next, a blade is cut into the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9 ′ obtained above from the circuit formation surface 9 a ′ side of the semiconductor wafer 9 ′ (dicing is performed), thereby dividing the semiconductor wafer 9 ′ and simultaneously cutting the film adhesive 14 .

[0454] Blade dicing can be performed using a known method. For example, after fixing the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not laminated (the non-laminated area) to a fixture such as a ring frame (not shown), a blade can be used to separate the semiconductor wafer 9' and cut the film adhesive 14.

[0455] like Figure 3B As shown, through this process, a plurality of film-adhesive-coated semiconductor chips 914 are obtained, each comprising a semiconductor chip 9 and a cut film-adhesive 140 provided on the back surface 9b thereof. These film-adhesive-coated semiconductor chips 914 are aligned and fixed on the intermediate layer 13 in the laminate sheet 10, and constitute a film-adhesive-coated semiconductor chip group 910.

[0456] The back surface 9b of the semiconductor chip 9 corresponds to the back surface 9b' of the semiconductor wafer 9'. Figure 3B In FIG. 1 , reference numeral 9 a denotes a circuit formation surface of the semiconductor chip 9 , which corresponds to the circuit formation surface 9 a ′ of the semiconductor wafer 9 ′.

[0457] When performing blade dicing, it is preferred that the blade be cut into the entire area of ​​the semiconductor wafer 9' in the thickness direction to separate it, and at the same time, the blade be cut into the middle area of ​​the intermediate layer 13 of the semiconductor device manufacturing sheet 101 from the first surface 14a of the film adhesive 14, thereby cutting the film adhesive 14 in the entire area in its thickness direction without cutting into the adhesive layer 12.

[0458] That is, when performing blade cutting, it is preferred that: the blade is moved from the circuit forming surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13 along the stacking direction of the stacked body of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9', and not to the surface of the intermediate layer 13 opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

[0459] In this step, the blade can be easily prevented from reaching the substrate 11 in the above manner, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, by making the main component of the intermediate layer 13 cut by the blade a non-silicone resin with a weight-average molecular weight of 100,000 or less, and in particular by making the weight-average molecular weight of 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0460] The conditions for blade cutting can be appropriately adjusted according to the purpose and are not particularly limited. Generally, the rotation speed of the blade is preferably 15,000 to 50,000 rpm, and the moving speed of the blade is preferably 5 to 75 mm / second.

[0461] like Figure 3C As shown, after dicing with a blade, the semiconductor chip 914 with the film-like adhesive is pulled off from the intermediate layer 13 in the laminated sheet 10 and picked up. Here, a pulling tool 7 such as a vacuum nozzle (vacuum collet) is used to pull the semiconductor chip 914 with the film-like adhesive in the direction of the arrow P. The pulling tool 7 is not shown in cross section.

[0462] The semiconductor chip 914 with the film-like adhesive can be picked up by a known method.

[0463] When the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0464] When the intermediate layer 13, for example, contains ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, the content of the ethylene vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass %, and the content of the siloxane compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass %, it is possible to more easily pick up the semiconductor chip 914 with a film-like adhesive.

[0465] Preferred embodiments of the method for producing a semiconductor chip with a film-like adhesive described above include, for example:

[0466] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, wherein:

[0467] The semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0468] The manufacturing method includes: a process of heating the semiconductor device manufacturing sheet while attaching the film adhesive therein to the back side of the semiconductor wafer; dividing the semiconductor wafer to which the film adhesive is attached by cutting from its circuit forming surface side into the entire area in the thickness direction, thereby producing the semiconductor chip, and at the same time cutting the semiconductor device manufacturing sheet from its film adhesive side in the thickness direction into the middle area of ​​the intermediate layer, cutting the film adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with film adhesive in which a plurality of semiconductor chips with the film adhesive are neatly arranged on the intermediate layer; and a process of pulling the semiconductor chip with the film adhesive off from the intermediate layer and picking it up (sometimes referred to as "manufacturing method 1" in this specification).

[0469] Figure 4A 、 Figure 4B and Figure 4C This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip used as a sheet for manufacturing a semiconductor device, showing a case where semiconductor chips are manufactured by dicing accompanied by formation of a reformed layer in a semiconductor wafer.

[0470] Figure 5A 、 Figure 5B and Figure 5CThis is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet, which shows a case where the semiconductor device manufacturing sheet is attached to a semiconductor chip and then used. In this method, the semiconductor device manufacturing sheet is used as a wafer. Here, Figure 1 Taking the semiconductor device manufacturing sheet 101 shown as an example, a method of using the sheet will be described.

[0471] First, before using the semiconductor device manufacturing wafer 101, Figure 4A As shown, a semiconductor wafer 9' is prepared, and a back grinding tape (sometimes also referred to as a surface protection tape) 8 is attached to its circuit formation surface 9a'.

[0472] exist Figure 4A In the figure, the reference numeral W 9’ represents the width of the semiconductor wafer 9 ′.

[0473] Then, if Figure 4B As shown, by irradiating a laser beam (not shown) so as to be focused on a focal point set inside the semiconductor wafer 9 ′, a modified layer 90 ′ is formed inside the semiconductor wafer 9 ′.

[0474] It is preferable to irradiate the semiconductor wafer 9 ′ with the laser beam from the back surface 9 b ′ side of the semiconductor wafer 9 ′.

[0475] The focus position at this time is the planned dividing (dicing) position of the semiconductor wafer 9 ′, and is set so that semiconductor chips of a target size, shape, and number can be obtained from the semiconductor wafer 9 ′.

[0476] Next, a grinder (not shown) is used to grind the back side 9b' of the semiconductor wafer 9'. Thus, the thickness of the semiconductor wafer 9' is adjusted to the target value, and at the same time, the force applied to the semiconductor wafer 9' during grinding is used to divide the semiconductor wafer 9' at the portion where the modified layer 90' is formed, as shown in FIG. Figure 4C As shown, a plurality of semiconductor chips 9 are manufactured.

[0477] Unlike other parts of semiconductor wafer 9', modified layer 90' of semiconductor wafer 9' is modified by laser irradiation, and its strength is weakened. Therefore, by applying force to semiconductor wafer 9' with modified layer 90' formed thereon, a force is applied to modified layer 90', causing semiconductor wafer 9' to crack at the modified layer 90', thereby obtaining multiple semiconductor chips 9.

[0478] In this manner, semiconductor chips 9 are obtained as the target of the semiconductor device manufacturing sheet 101. More specifically, this step provides a semiconductor chip group 901 in which a plurality of semiconductor chips 9 are aligned and fixed on the back grinding tape 8.

[0479] When looking down at the semiconductor chipset 901 from above, the planar shape formed by connecting the outermost parts of the semiconductor chipset 901 (in this specification, this planar shape is sometimes referred to as the "planar shape of the semiconductor chipset") is exactly the same as the planar shape of the semiconductor wafer 9' when looking down at the semiconductor wafer 9' in the same way, or the difference between the planar shapes of the two is so slight that it can be ignored. It can be said that the planar shape of the semiconductor chipset 901 is roughly the same as the planar shape of the semiconductor wafer 9'.

[0480] Therefore, if Figure 4C As shown, the width of the planar shape of the semiconductor chip group 901 can be regarded as being equal to the width W of the semiconductor wafer 9 '. 9’ Furthermore, the maximum width of the planar shape of the semiconductor chip group 901 can be considered to be equal to the width W of the semiconductor wafer 9 '. 9’ The maximum value is the same.

[0481] Although the case where semiconductor chips 9 are produced from the semiconductor wafer 9 ′ as intended is shown here, a portion of the semiconductor wafer 9 ′ may not be divided into semiconductor chips 9 depending on the conditions when polishing the back surface 9 b ′ of the semiconductor wafer 9 ′.

[0482] Next, a semiconductor chip with a film-like adhesive is manufactured using the semiconductor chip 9 (semiconductor chip group 901 ) obtained above.

[0483] First, if Figure 5A As shown, while heating a sheet 101 for semiconductor device manufacturing with the release film 15 removed, the film adhesive 14 therein is attached to the back surfaces 9b of all the semiconductor chips 9 in the semiconductor chip group 901. In this case, the film adhesive 14 may be attached to an incompletely divided semiconductor wafer.

[0484] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum values ​​are all equal to the width W of the semiconductor wafer 9' 9’ The maximum values ​​(in other words, the width of the semiconductor chip group 901 ) are exactly the same, or are different but with a slight error, and are almost the same.

[0485] That is, the width W of the intermediate layer 13 13 The relationship between the maximum value of and the maximum value of the width of the semiconductor chip group 901 can be the same as the width W of the intermediate layer 13 described above. 13 The maximum value is related to the width W of the semiconductor wafer 9' 9’The relationship between the maximum values ​​of and is the same. In addition, the width W of the film adhesive 14 14 The relationship between the maximum value of and the maximum value of the width of the semiconductor chip group 901 can be similar to the width W of the film adhesive 14 described above. 14 The maximum value is related to the width W of the semiconductor wafer 9' 9’ The relationship between the maximum values ​​of is the same.

[0486] At this time, the film adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor chip group 901 using the same method as the method of attaching the film adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

[0487] Next, the back grinding tape 8 is removed from the fixed semiconductor chip group 901. Figure 5B As shown, the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) while being cooled, thereby expanding. Arrow E1 indicates the direction of expansion of the semiconductor device manufacturing sheet 101. This expansion allows the film-like adhesive 14 to be cut along the periphery of the semiconductor chip 9.

[0488] Through this process, a plurality of film-adhesive-coated semiconductor chips 914 are obtained, each comprising a semiconductor chip 9 and a cut film-adhesive 140 provided on the back surface 9b thereof. These film-adhesive-coated semiconductor chips 914 are aligned and fixed on the intermediate layer 13 in the laminate sheet 10, and constitute a film-adhesive-coated semiconductor chip group 910.

[0489] The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are basically the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained in the manufacturing method 1 described above.

[0490] When a part of the semiconductor wafer 9 ′ is not divided into the semiconductor chips 9 when the semiconductor wafer 9 ′ is divided as described above, this step can be performed to divide the part into the semiconductor chips.

[0491] The semiconductor device manufacturing sheet 101 is preferably expanded at a temperature of -5 to 5° C. By cooling and expanding the semiconductor device manufacturing sheet 101 (cold expansion) as described above, the film-like adhesive 14 can be cut more easily with high precision.

[0492] The expansion of the semiconductor device manufacturing sheet 101 can be performed using a known method. For example, the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not laminated (the non-laminated area) can be fixed to a fixture such as a ring frame (not shown). Then, the entire area of ​​the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are laminated can be pushed from the substrate 11 toward the adhesive layer 12 to expand the semiconductor device manufacturing sheet 101.

[0493] Figure 5B In the embodiment, although the non-laminated area on the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated is almost parallel to the first surface 13a of the intermediate layer 13, as described above, in a state expanded by pushing up the sheet 101 for manufacturing a semiconductor device, the non-laminated area includes an inclined surface, the height of which gradually decreases as it approaches the periphery of the adhesive layer 12 in a direction opposite to the above-mentioned pushing-up direction.

[0494] In this process, by providing the semiconductor device manufacturing sheet 101 with an intermediate layer 13 (in other words, by providing the film-like adhesive 14 before cutting on the intermediate layer 13), the film-like adhesive 14 can be cut with good precision at the target position (in other words, along the periphery of the semiconductor chip 9), thereby suppressing poor cutting.

[0495] like Figure 5C As shown, after expansion, the semiconductor chip 914 with the film adhesive is pulled away from the intermediate layer 13 in the laminate 10 to be picked up.

[0496] The picking up at this time can be performed by the same method as the picking up in the manufacturing method 1 described above, and the picking up suitability is also the same as the picking up suitability in the manufacturing method 1.

[0497] For example, in this step, when the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0498] In addition, when the intermediate layer 13 contains, for example, ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, the content of the ethylene vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass %, and the content of the siloxane compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass %, it is possible to more easily pick up the semiconductor chip 914 with a film-like adhesive.

[0499] Preferred embodiments of the method for producing a semiconductor chip with a film-like adhesive described above include, for example:

[0500] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, wherein:

[0501] The semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0502] The manufacturing method includes the following steps: forming a modified layer inside the semiconductor wafer by irradiating the semiconductor wafer with a laser beam focused on a focal point set inside the semiconductor wafer; grinding the back surface of the semiconductor wafer after the modified layer is formed and dividing the semiconductor wafer at the portion where the modified layer is formed by using the force applied to the semiconductor wafer during grinding to obtain a semiconductor chip group in which a plurality of semiconductor chips are aligned; heating the sheet for manufacturing semiconductor devices and attaching the film adhesive therein to the back surfaces of all the semiconductor chips in the semiconductor chip group; cooling the sheet for manufacturing semiconductor devices attached to the semiconductor chip group and stretching it in a direction parallel to its surface to cut the film adhesive along the outer periphery of the semiconductor chip to obtain a semiconductor chip group with film adhesive in which a plurality of semiconductor chips with the film adhesive are aligned on the intermediate layer; and pulling the semiconductor chips with the film adhesive off the intermediate layer to pick them up (sometimes referred to as "manufacturing method 2" in this specification).

[0503] So far, any one of the manufacturing methods 1 and 2 is Figure 1 While the method of using the semiconductor device manufacturing sheet 101 shown in the figure is described as an example, other semiconductor device manufacturing sheets of this embodiment can be used in the same manner. In this case, other steps can be added as needed based on the differences in the structure of the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101, so that the semiconductor device manufacturing sheet can be used.

[0504] Not limited to the cases of manufacturing method 1 and manufacturing method 2, after obtaining the semiconductor chip group with film-like adhesive, before picking up the semiconductor chip with film-like adhesive, the stacked sheet can be expanded in a direction parallel to the surface (first surface) on the middle layer side of the adhesive layer, maintaining this state and further heating the peripheral portion of the semiconductor chip with film-like adhesive (semiconductor chip group with film-like adhesive) in the stacked sheet that is not loaded with the film-like adhesive.

[0505] This allows the peripheral portion to be shrunk, while also widening the distance between adjacent semiconductor chips in the laminated sheet, i.e., the kerf width, and maintaining this kerf width with high uniformity. Furthermore, the semiconductor chips with the film adhesive can be more easily picked up.

[0506] Example

[0507] The present invention will be described in more detail below using specific examples, but the present invention is not limited to the following examples.

[0508] <<Raw Materials for Preparation of Adhesive Composition>>

[0509] The raw materials used to prepare the adhesive composition are shown below.

[0510] [Polymer component (a)]

[0511] (a)-1: an acrylic resin (weight average molecular weight: 800,000, glass transition temperature: 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[0512] [Epoxy resin (b1)]

[0513] (b1)-1: Cresol novolac-type epoxy resin to which an acryloyl group is added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight 518 g / eq, number average molecular weight 2100, unsaturated group content equal to epoxy group content)

[0514] [Thermosetting agent (b2)]

[0515] (b2)-1: Aralkyl-type phenolic resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, Inc., number average molecular weight: 1100, softening point: 63° C.)

[0516] [Filling material (d)]

[0517] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatech, average particle size 50 nm, methacrylsilane-treated product)

[0518] [Coupling agent (e)]

[0519] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Chemical Co., Ltd.)

[0520] [Crosslinking agent (f)]

[0521] (f)-1: Toluene diisocyanate crosslinking agent ("CORONATE L" manufactured by TOSOH CORPORATION)

[0522] [Example 1]

[0523] <<Manufacturing of Sheets for Semiconductor Device Manufacturing>>

[0524] <Manufacturing of Base Material>

[0525] Low-density polyethylene (LDPE, "SUMIKATHENE L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, extruded using a T-die method, and biaxially stretched using a cooling roll to obtain an LDPE substrate (thickness 110 μm).

[0526] <Preparation of Adhesive Layer>

[0527] A non-energy ray-curable adhesive composition containing an acrylic resin ("ORIBAIN BPS 6367X" manufactured by TOYOCHEM CO., LTD.) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by TOYOCHEM CO., LTD.) (1 part by mass) was prepared.

[0528] Next, a release film having a single surface of a polyethylene terephthalate film subjected to a release treatment by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface of the release film and heated and dried at 100°C for 2 minutes to prepare a non-energy ray-curable adhesive layer (10 μm thick).

[0529] <Production of the middle layer>

[0530] An ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight of 30,000, content of structural units derived from vinyl acetate of 25% by mass) (15 g) was dissolved in 85 g of tetrahydrofuran at room temperature, and a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan KK., the number of structural units represented by the chemical formula "-Si(-CH3)2-O-" in one molecule being 45 to 230) (1.5 g) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0531] The intermediate layer-forming composition obtained above was applied to the release-treated surface of a release film made of polyethylene terephthalate and subjected to release treatment on one side by silicone treatment. The intermediate layer (20 μm thick) was prepared by heating and drying at 70°C for 5 minutes.

[0532] <Production of Film Adhesive>

[0533] A thermosetting adhesive composition containing a polymer component (a)-1 (100 parts by mass), an epoxy resin (b1)-1 (10 parts by mass), a thermosetting agent (b2)-1 (1.5 parts by mass), a filler (d)-1 (75 parts by mass), a coupling agent (e)-1 (0.5 parts by mass) and a crosslinking agent (f)-1 (0.5 parts by mass) was prepared.

[0534] Next, a release film having a single surface of a polyethylene terephthalate film subjected to a release treatment by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface of the release film and heated and dried at 80°C for 2 minutes to prepare a thermosetting film-like adhesive (7 μm thick).

[0535] <Manufacturing of Sheets for Semiconductor Device Manufacturing>

[0536] The exposed surface of the adhesive layer obtained above, which is opposite to the side provided with the release film, was bonded to one surface of the substrate obtained above to prepare a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0537] The exposed surface of the film-like adhesive obtained above, which is opposite to the side with the release film, is bonded to the exposed surface of the intermediate layer obtained above, which is opposite to the side with the release film, thereby producing a second intermediate layer laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive and a release film).

[0538] Then, for the second intermediate layer stack with a release film, a cutting blade is used to punch out holes from the release film on the intermediate layer side to the film adhesive to remove unnecessary parts, thereby producing a second intermediate layer stack with a release film, which is composed of a film adhesive (7 μm thick) with a circular planar shape (305 mm in diameter), an intermediate layer (20 μm thick) and a release film stacked in sequence along their thickness direction on the release film on the film adhesive side.

[0539] Next, the release film is removed from the release-film-attached first intermediate laminate obtained above to expose one surface of the pressure-sensitive adhesive layer.

[0540] Furthermore, the circular release film was removed from the second intermediate layer laminated product with a release film obtained above to expose one surface of the intermediate layer.

[0541] Next, the newly exposed surface of the adhesive layer in the first intermediate laminate was bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate. The substrate and adhesive layer (i.e., support sheet) in the resulting laminate were punched from the substrate side using a cutting blade (370 mm diameter) to remove unnecessary portions, so that the support sheet had a circular planar shape (370 mm diameter) and the circular film-shaped adhesive and intermediate layer (305 mm diameter) were concentric.

[0542] Thus, a sheet for manufacturing a semiconductor device with a release film is obtained, which is composed of a substrate (thickness of 110 μm), an adhesive layer (thickness of 10 μm), an intermediate layer (thickness of 20 μm), a film-like adhesive (thickness of 7 μm) and a release film stacked in sequence along their thickness direction.

[0543] <<Evaluation of Sheets for Semiconductor Device Manufacturing>>

[0544] <Calculation of the Ratio of Silicon Concentration on the Film-Like Adhesive Side of the Intermediate Layer>

[0545] During the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before lamination with the adhesive layer is analyzed by XPS to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si), and the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is calculated based on the measured values.

[0546] XPS analysis was performed using an X-ray photoelectron spectroscopy device ("Quantra SXM" manufactured by ULVAC, Inc.) with an irradiation angle of 45° and an X-ray beam diameter of The results were carried out under the condition of an output of 4.5 W. The results are shown in the column "Concentration ratio (%) of element in the intermediate layer" in Table 1 together with the concentration ratio (%) of other elements.

[0547] <Evaluation of the Effect of Suppressing Chip Generation During Blade Cutting>

[0548] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0549] The release film is removed from the sheet for producing a semiconductor device obtained above.

[0550] A silicon wafer (300 mm in diameter and 75 μm thick) whose backside had been ground using dry polishing was attached to the backside (ground surface) of the silicon wafer using a tape laminator ("Adwill RAD2500" manufactured by Lintec Corporation) while being heated to 60°C. The sheet was then attached to the backside (ground surface) of the silicon wafer via its film adhesive. This produced a laminate comprising a substrate, an adhesive layer, an intermediate layer, a film adhesive, and a silicon wafer laminated in this order along their thickness direction (a laminate comprising the laminate sheet, the film adhesive, and the silicon wafer laminated in this order along their thickness direction).

[0551] Next, a region near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer in the laminate (the non-laminated region) is fixed to a wafer dicing ring frame.

[0552] Next, a cutting device ("DFD6361" manufactured by DISCO Corporation) was used for cutting, thereby dividing the silicon wafer and also cutting the film adhesive to obtain a silicon chip of 8mm × 8mm in size. The cutting at this time was carried out in the following manner: the rotation speed of the blade was set to 30000rpm and the moving speed of the blade was set to 30mm / second. For the manufacture of semiconductor devices, the blade was cut into the middle area of ​​the intermediate layer (that is, the entire area in the thickness direction of the film adhesive and the area from the face of the film adhesive side of the intermediate layer to the middle area) from the attached surface of the film adhesive of the silicon wafer. As a blade, "Z05-SD2000-D1-90 CC" manufactured by DISCO Corporation was used.

[0553] Thus, a silicon chip group with film adhesive is obtained, in which a plurality of silicon chips with film adhesive are arranged and fixed to the intermediate layer in the laminate sheet via the film adhesive and provided with the cut film adhesive on the back surface of the silicon chip.

[0554] [Evaluation of the Effect of Suppressing Chip Generation]

[0555] The silicon chip set with the film-like adhesive obtained above was observed from above the silicon chip side using a digital microscope (Keyence Corporation "VH-Z100") to check for the presence of shavings. A score of "A" indicated no shavings at all, while a score of "B" indicated a slight amount of shavings. The results are shown in Table 1.

[0556] <Evaluation of Cutting Properties of Film Adhesive During Expansion>

[0557] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0558] A silicon wafer having a circular planar shape with a diameter of 300 mm and a thickness of 775 μm was used, and a backgrinding tape (“Adwill E-3100TN” manufactured by LINTEC Corporation) was attached to one surface of the silicon wafer.

[0559] Next, a laser irradiation device ("DFL73161" manufactured by DISCO Corporation) was used to irradiate the silicon wafer with a laser beam focused on a focal point set within the wafer, thereby forming a modified layer within the wafer. The focal point was set so that multiple 8mm x 8mm silicon chips could be obtained from the wafer. Furthermore, the laser beam was irradiated from the other side of the wafer (the side not affixed with backgrinding tape).

[0560] Next, the other side of the silicon wafer is ground using a grinder to a thickness of 30 μm. The grinding force applied to the silicon wafer simultaneously divides the silicon wafer at the site where the modified layer has formed, forming multiple silicon chips. This results in a silicon chip set in which the multiple silicon chips are neatly aligned and fixed to the backgrinding tape.

[0561] Next, using a tape laminating machine ("Adwill RAD2500" manufactured by LINTEC Corporation), the film-like adhesive in the sheet for semiconductor device manufacturing obtained above was applied to the other surface (in other words, the polished surface) of all the silicon chips (silicon chip group) while being heated to 60°C.

[0562] Next, the area near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer of the sheet for manufacturing semiconductor devices attached to the silicon chip group (the non-laminated area) is fixed to a wafer dicing ring frame.

[0563] Next, the backgrinding tape was removed from the fixed silicon chip set. Next, using a fully automatic chip dicing machine ("DDS2300" manufactured by DISCO Corporation), the semiconductor device manufacturing sheet was cooled at 0°C while being expanded parallel to its surface, thereby severing the film adhesive along the periphery of the silicon chip. At this time, the peripheral edge of the semiconductor device manufacturing sheet was fixed, and the entire area of ​​the semiconductor device manufacturing sheet where the intermediate layer and film adhesive were laminated was pushed up only 15 mm from the substrate side of the semiconductor device manufacturing sheet to achieve expansion.

[0564] Thus, a silicon chip group with film adhesive is obtained, in which a plurality of silicon chips with film adhesive are aligned and fixed on the intermediate layer, including silicon chips and the cut film adhesive provided on the other surface (polished surface) of the silicon chips.

[0565] Next, after temporarily releasing the expansion of the semiconductor device manufacturing sheet, the laminate (i.e., the laminate) composed of the stacked substrate, adhesive layer, and intermediate layer is expanded at room temperature in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the peripheral edge of the laminate, which is not supported by the film-like adhesive, is heated. This shrinks the peripheral edge while maintaining the width of the cut between adjacent silicon chips in the laminate at a constant value or greater.

[0566] [Evaluation of Cutting Properties of Film Adhesives]

[0567] During the production of the aforementioned silicon chip assembly with film adhesive, the obtained silicon chip assembly with film adhesive was observed from above on the silicon chip side using a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION). The number of cut lines extending in one direction and in a direction perpendicular to the direction that would have formed if the film adhesive had been normally cut by expanding the semiconductor device manufacturing sheet was determined. The number of cut lines that were not actually formed or the number of cut lines that were not completely formed was determined. The cuttability of the film adhesive was evaluated according to the following evaluation criteria.

[0568] The results are shown in Table 1.

[0569] (Evaluation Criteria)

[0570] A: The total number of cut lines of the film adhesive that was not actually formed and the cut lines of the film adhesive that was not completely formed was 5 or less.

[0571] B: The total number of cut lines of the film-like adhesive that was not actually formed and the cut lines of the film-like adhesive that was not completely formed was 6 or more.

[0572] <Evaluation of Pickup Properties of Silicon Chips with Film-Shaped Adhesive After Expansion>

[0573] After evaluating the cutting properties of the film adhesive, a silicon chip set with a film adhesive and a die bonder ("PU100" manufactured by FASFORD TECHNOLOGY CO., LTD.) were used to pick up the silicon chips with the film adhesive from the middle layer of the laminated sheet under the conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms. The evaluation was "A" for cases where all silicon chips with the film adhesive were picked up normally, and "B" for cases where more than one silicon chip with the film adhesive could not be picked up normally. The results are shown in Table 1.

[0574] <Measurement of T-Peel Strength between Intermediate Layer and Film-Like Adhesive>

[0575] The release film on the semiconductor device manufacturing sheet obtained above was removed.

[0576] The entire exposed surface of the film-like adhesive in the resulting sheet for manufacturing semiconductor devices was bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A)PL-SHIN 8LK" manufactured by Lintec Corporation), and the resulting laminate was cut into a size of 50 mm × 100 mm to prepare a test piece.

[0577] For this test piece, according to JIS K6854-3, the laminate of the substrate, adhesive layer, and intermediate layer (i.e., the laminated sheet) was pulled apart from the laminate of the film adhesive and adhesive tape, and the test piece was peeled off in a T-shape. The maximum value of the peel force (mN / 50mm) measured at this time was taken as the T-peel strength. The measurement was performed at a peel speed of 50 mm / min. The results are shown in Table 1.

[0578] <<Manufacturing and Evaluation of Sheets for Semiconductor Device Manufacturing>>

[0579] [Example 2]

[0580] A sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Example 1, except that the amount of the intermediate layer-forming composition applied was increased to make the thickness of the intermediate layer 80 μm instead of 20 μm.

[0581] [Example 3]

[0582] A sheet for semiconductor device manufacturing was produced and evaluated using the same method as in Example 1, except that the siloxane compound was not added when preparing the intermediate layer-forming composition, and the amount of the ethylene-vinyl acetate copolymer used was 16.5 g instead of 15 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer, so that only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. "-" in the Additive column in Table 1 indicates that the additive was not used.

[0583] [Comparative Example 1]

[0584] A sheet for semiconductor device manufacturing was produced and evaluated in the same manner as in Example 1, except that an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) of the same mass was used in place of the ethylene-vinyl acetate copolymer when preparing the intermediate layer-forming composition, and the amount of the intermediate layer-forming composition applied was increased to increase the thickness of the intermediate layer to 80 μm instead of 20 μm. The results are shown in Table 1.

[0585] [Comparative Example 2]

[0586] A sheet for semiconductor device manufacturing was produced and evaluated in the same manner as in Example 1, except that an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) of the same mass was used in place of the ethylene-vinyl acetate copolymer when preparing the intermediate layer-forming composition. The results are shown in Table 1.

[0587] [Table 1]

[0588]

[0589] The above results show that Examples 1 to 3 suppress the generation of chips during blade dicing, suppress the failure of the film adhesive to be cut during expansion, and exhibit excellent semiconductor wafer separation suitability.

[0590] In Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer in the sheet for manufacturing a semiconductor device was 30,000.

[0591] In Examples 1 to 3, the content of the ethylene vinyl acetate copolymer in the intermediate layer was 90.9% by mass or more, and the content of the siloxane compound was 9.1% by mass or less, relative to the total mass of the intermediate layer.

[0592] In addition, in Examples 1 and 2, the pickup properties of the silicon chip with the film-like adhesive after expansion were excellent.

[0593] In Examples 1 and 2, the T-peel strength between the interlayer and the film adhesive was moderately low, at 100 mN / 50 mm or less. Furthermore, the silicon concentration in the interlayer was moderately high, at 9%. These evaluation results are consistent with the aforementioned evaluation results of the pickup properties of silicon chips with film adhesives.

[0594] In Example 3, the intermediate layer in the semiconductor device manufacturing sheet did not contain the siloxane compound.

[0595] Although the difference between the semiconductor device manufacturing sheets of Examples 1 and 2 lies only in the thickness of the intermediate layer, the T-peel strength between the intermediate layer and the film adhesive of Example 2 is smaller than that of Example 1, making it easier to pick up the silicon chip with the film adhesive in Example 2 than in Example 1. This is presumably because, even though the ratio (mass %) of the content of the siloxane compound in the intermediate layer relative to the total mass of the intermediate layer is the same in Examples 1 and 2, the content (parts by mass) of the siloxane compound in the intermediate layer of Example 2 is greater than that of Example 1, making it more likely that the siloxane compound is unevenly distributed on both surfaces of the intermediate layer and in the vicinity thereof. Therefore, the amount of siloxane compound unevenly distributed on both surfaces of the intermediate layer and in the vicinity thereof is also greater in Example 2 than in Example 1.

[0596] In addition, in Examples 1 to 3, when the exposed surface of the intermediate layer was analyzed by XPS, no nitrogen was detected.

[0597] On the other hand, in Comparative Examples 1 and 2, generation of chips was not suppressed during blade dicing, and the semiconductor wafer dividing suitability was poor.

[0598] In Comparative Examples 1 and 2, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer in the sheet for manufacturing a semiconductor device was 200,000.

[0599] The semiconductor device manufacturing sheets of Comparative Examples 1 and 2 differed only in the thickness of the intermediate layer, and the relationship between the intermediate layer and the film-like adhesive in Comparative Examples 1 and 2 showed the same tendency as that of Examples 1 and 2.

[0600] In addition, in Comparative Examples 1 and 2, when the exposed surface of the intermediate layer was analyzed by XPS, no nitrogen was detected.

[0601] Industrial Applicability

[0602] The present invention can be used in the manufacture of semiconductor devices.

[0603] Description of Reference Numerals

[0604] 101: Sheet for manufacturing a semiconductor device; 11: Base material; 12: Adhesive layer; 13: Intermediate layer; 13a: First surface of the intermediate layer; 14: Film-like adhesive.

Claims

1. A sheet for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive. The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate in this order. The intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component, The intermediate layer contains ethylene vinyl acetate copolymer and a silicone compound as the non-silicone resin. When the surface of the intermediate layer on the film-like adhesive side is analyzed by X-ray photoelectron spectroscopy, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen, and silicon is 1 to 20%. In the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units is 10 to 40% by mass. In the intermediate layer, the content of the ethylene vinyl acetate copolymer is 90 to 99.99% by mass relative to the total mass of the intermediate layer. In the intermediate layer, the content of the siloxane compound is 0.01 to 10% by mass relative to the total mass of the intermediate layer.

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