Packaging method, packaging structure and display device

Abstract

The present application relates to the field of display technology, and the embodiments of the present application provide a packaging method, a packaging structure, and a display device. By using an atomic layer deposition process to form a first inorganic layer covering the device to be packaged on the outside of the device to be packaged, an excellent bonding interface between the first inorganic layer and the device to be packaged is obtained, which can not only prevent the first inorganic layer from breaking or peeling off from the device to be packaged when bending, but also improve the water and oxygen barrier ability. Subsequently, a plasma enhanced chemical vapor deposition process is used to deposit a second inorganic layer on the first inorganic layer. At this time, not only can the device to be packaged be protected from damage by plasma, but also the film formation time of the first inorganic layer can be reduced. In this way, the service life and reliability of the packaging structure are improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a packaging method, a packaging structure and a display device. Background Art

[0002] In the related art, after the display device is packaged, when it is bent, the inorganic layer in the packaging structure is easily broken or the inorganic layer is peeled off from the display device, causing failure of the packaging structure. Summary of the invention

[0003] Based on this, it is necessary to provide a packaging method, a packaging structure and a display device to address the above technical problems, so as to improve the mechanical properties of the packaging structure in terms of stretchability and bending resistance, and improve the reliability of the packaging structure.

[0004] According to one aspect of the present application, an embodiment of the present application provides a packaging method, comprising the following steps:

[0005] Using an atomic layer deposition process to form a first inorganic layer covering the device to be packaged on the outside of the device to be packaged;

[0006] Depositing a second inorganic layer on the first inorganic layer using a plasma enhanced chemical vapor deposition process;

[0007] forming an organic layer on the second inorganic layer;

[0008] The steps of forming the second inorganic layer and forming the organic layer are repeated to form a packaging structure including the first inorganic layer, a plurality of the second inorganic layers and at least one organic layer.

[0009] In one embodiment, the step of forming a first inorganic layer covering the device to be packaged on the outside of the device to be packaged by using an atomic layer deposition process specifically includes:

[0010] Using an atomic layer deposition process to form a metal oxide layer covering the device to be packaged on the outside of the device to be packaged;

[0011] An atomic layer deposition process is used to form a silicon-containing layer on the metal oxide layer to form the first inorganic layer including the metal oxide layer and the silicon-containing layer.

[0012] In one embodiment, the thickness of the metal oxide layer is 1 nanometer to 5 nanometers; and / or

[0013] The thickness of the silicon-containing layer is 5 nanometers to 50 nanometers.

[0014] In one embodiment, the metal oxide layer includes one or more of aluminum oxide, magnesium oxide or titanium oxide.

[0015] In one embodiment, the silicon-containing layer includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride.

[0016] In one embodiment, forming an organic layer on the second inorganic layer specifically includes:

[0017] spraying an organic solution on the second inorganic layer by inkjet printing process;

[0018] The organic solution on the second inorganic layer is cured by a thermal curing process and / or a photocuring process to form the organic layer.

[0019] In one embodiment, before forming an organic layer on the second inorganic layer, the method includes:

[0020] A first preset process is used to pattern a surface of the second inorganic layer on a side away from the device to be packaged, so as to form a first structure.

[0021] In one embodiment, the first predetermined process includes a laser process.

[0022] In one embodiment, the first structure includes one or more of a water ripple structure and a polygonal structure.

[0023] In one embodiment, the width of the recessed portion in the first structure in the first direction is 50 micrometers to 200 micrometers.

[0024] In one embodiment, the step of forming an organic layer on the second inorganic layer comprises:

[0025] A second preset process is used to roughen a surface of the organic layer on a side facing away from the device to be packaged, so as to form a second structure.

[0026] In one embodiment, the second preset process includes a photolithography process or a laser process.

[0027] In one embodiment, the second structure includes one or more of a pit-shaped structure, a grid-shaped structure, and a prism-shaped structure.

[0028] In one embodiment, the width of the recessed portion in the second structure in the first direction is 30 micrometers to 80 micrometers.

[0029] In one embodiment, the material of the second inorganic layer includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride.

[0030] In one embodiment, the thickness of the second inorganic layer is 800 nanometers to 1200 nanometers.

[0031] In one embodiment, the material of the organic layer includes polymethyl methacrylate.

[0032] In one embodiment, the thickness of the organic layer is 1000 nanometers to 15000 nanometers.

[0033] According to another aspect of the present application, an embodiment of the present application provides a packaging structure, which is manufactured using the packaging method as described above.

[0034] According to another aspect of the present application, an embodiment of the present application provides a display device, including a display device and the above-mentioned packaging structure;

[0035] Wherein, the display device includes an organic light emitting diode device or a quantum dot light emitting diode device.

[0036] Based on the packaging method, packaging structure and display device of the embodiment of the present application, the first inorganic layer covering the device to be packaged is formed on the outside of the device to be packaged by using the atomic layer deposition process, and an excellent bonding interface between the first inorganic layer and the device to be packaged is obtained, which can not only prevent the first inorganic layer from breaking or peeling off from the device to be packaged when bending, but also improve the water and oxygen barrier ability. Subsequently, the second inorganic layer is deposited on the first inorganic layer by using the plasma enhanced chemical vapor deposition process. At this time, not only can the device to be packaged be protected from damage by plasma, but also the film forming time of the first inorganic layer can be reduced. In this way, the service life and reliability of the packaging structure are improved.

[0037] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a structural schematic diagram of a packaging structure in an embodiment of the related technology;

[0039] Figure 2 It is a schematic diagram of the film layer of the packaging structure in an embodiment of the related technology;

[0040] Figure 3 This is a schematic diagram of the packaging structure in one embodiment of the present application;

[0041] Figure 4 This is a schematic diagram of a packaging method in an embodiment of the present application;

[0042] Figure 5 This is a partially enlarged schematic diagram of the first inorganic layer and the second inorganic layer being combined together in one embodiment of the present application;

[0043] Figure 6It is an enlarged schematic diagram of the deposition boundary between the first inorganic layer and the second inorganic layer in one embodiment of the present application;

[0044] Figure 7 A schematic diagram of water and oxygen intrusion into a packaging structure in an embodiment of the present application;

[0045] Figure 8 A schematic diagram of a packaging structure in another embodiment of the present application in which water and oxygen invade;

[0046] Fig. 9 This is a schematic diagram of a packaging method in another embodiment of the present application;

[0047] Fig.10 This is a structural schematic diagram of a first structure in an embodiment of the present application;

[0048] Fig.11 This is a structural schematic diagram of a first structure in another embodiment of the present application;

[0049] Fig.12 This is a schematic diagram of a packaging method in another embodiment of the present application;

[0050] Brief description of component symbols:

[0051] 10: Glass substrate

[0052] 20: Display device

[0053] 30: Inorganic barrier layer 31: First sub-inorganic layer

[0054] 32: second inorganic sub-layer 33: third inorganic sub-layer

[0055] 34: The fourth inorganic layer

[0056] 40: Organic buffer layer

[0057] 100: Substrate

[0058] 101: Device to be packaged 102: Cathode layer

[0059] 200: first inorganic layer 210: metal oxide layer

[0060] 220: Silicon-containing layer

[0061] 300: second inorganic layer 310: first structure

[0062] 400: organic layer 410: second structure

[0063] A: Depression

[0064] p1: first path p2: second path

[0065] d1, d2: width DETAILED DESCRIPTION

[0066] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and easy to understand, the specific implementation of the embodiment of the present application is described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the embodiment of the present application. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. The embodiment of the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention. Therefore, the embodiment of the present application is not limited by the specific embodiments disclosed below.

[0067] It is understood that the terms "first", "second", etc. used in this application can be used in this article to describe various professional terms, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. However, unless otherwise specified, these professional terms are not limited by these terms. These terms are only used to distinguish one professional term from another professional term. For example, without departing from the scope of this application, the first structure and the second structure are different structures. In the description of the embodiments of the present application, the meaning of "multiple" and "several" is at least two, such as two, three, etc., unless otherwise clearly and specifically limited.

[0068] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0069] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than the horizontal height of the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0070] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0071] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in this application and in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0072] At present, since the display device in the display apparatus is easily corroded by components such as moisture and oxygen in the air, it is usually necessary to use a packaging structure to package the display device to prevent the intrusion of moisture and oxygen and extend the service life of the display device.

[0073] Figure 1 A schematic diagram of the packaging structure in an embodiment of the related art is shown. Figure 2 A schematic diagram of the film layer of the packaging structure in an embodiment of the related technology is shown; for ease of explanation, only the part related to the embodiment of the related technology is shown.

[0074] In the related art, a single layer or multiple layers of thin films are usually deposited on a glass substrate 10 to encapsulate the display device 20. Figure 1 As shown, the packaging structure includes a glass substrate 10, a display device 20 disposed on the glass substrate 10, and an inorganic barrier layer 30, an organic buffer layer 40, and an inorganic barrier layer 30 stacked in sequence on the display device 20. The inorganic barrier layer 30 has a certain water and oxygen barrier capability, and can isolate the display device 20 from the outside air. The organic buffer layer 40 has a certain bendability, and can display the display device 20 flexibly.

[0075] The inventors of the present application have noticed that the more film layers there are, the stronger its water and oxygen barrier ability is. However, if the more film layers there are and the thicker its packaging structure is, the lower the light transmittance and the poor bendability will be, which will affect the use of the display device. Therefore, in the related art, the PECVD (Plasma Enhanced Chemical Vapor Deposition) process is usually used to deposit the Figure 2 The film layer shown in the figure can meet the water and oxygen barrier capability without affecting the use of the display device. Figure 2For example, the inorganic barrier layer 30 stacked on the display device 20 includes a first sub-inorganic layer 31 and a second sub-inorganic layer 32 deposited in sequence by a PECVD process, the thickness of the first sub-inorganic layer 31 is generally 6000 angstroms to 12000 angstroms, the thickness of the second sub-inorganic layer 32 is generally 150 angstroms to 300 angstroms, the thickness of the organic buffer layer 40 stacked on the aforementioned inorganic barrier layer 30 by inkjet printing is generally 8 microns to 12 microns, and the inorganic barrier layer 30 stacked on the organic buffer layer 40 includes a third sub-inorganic layer 33 and a fourth sub-inorganic layer 34 deposited in sequence by a PECVD process, the thickness of the third sub-inorganic layer 33 is generally 150 angstroms to 300 angstroms, and the thickness of the fourth sub-inorganic layer 34 is generally 6000 angstroms to 12000 angstroms.

[0076] The inventors of the present application have further discovered that, due to the PECVD process used for deposition, plasma has a corrosive effect, and the plasma generated in the process may damage the display device 20. Furthermore, when bending, curling or folding, the bending stress generated may cause the inorganic barrier layer 30 to break or peel off from the display device 20, and its reliability cannot be guaranteed.

[0077] Based on this, the embodiments of the present application improve the packaging method to avoid the aforementioned problems. The packaging method and packaging structure provided by the embodiments of the present application are described below in conjunction with the relevant descriptions of some embodiments.

[0078] Figure 3 This is a schematic diagram of the packaging structure in one embodiment of the present application; Figure 4 This is a flow chart of a packaging method in an embodiment of the present application. For ease of explanation, only the parts related to the embodiment of the present application are shown.

[0079] Please refer to Figure 3 The packaging structure provided in the embodiment of the present application includes a device to be packaged 101 disposed on a substrate 100, and a first inorganic layer 200, a second inorganic layer 300, an organic layer 400, and a second inorganic layer 300 sequentially stacked on the device to be packaged 101. In some embodiments, the material of the substrate 100 can be low-temperature polysilicon, low-temperature polycrystalline oxide, indium gallium zinc oxide, etc., which can be selected according to actual needs, and the embodiment of the present application does not specifically limit this.

[0080] Please refer to Figure 4 , and combined with reference Figure 3 , an embodiment of the present application provides a packaging method, the packaging method comprising the following steps:

[0081] S401, forming a first inorganic layer 200 covering the device to be packaged 101 on the outside of the device to be packaged 101 by using an atomic layer deposition process;

[0082] Specifically, atomic layer deposition (ALD) is a method of coating a substance on a substrate surface layer by layer in the form of a single atomic film. In some embodiments, an atomic layer deposition process can be used to form a metal oxide layer 210 covering the device to be packaged 101 on the outside of the device to be packaged 101, and then an atomic layer deposition process is used to form a silicon-containing layer 220 on the metal oxide layer 210 to form a first inorganic layer 200 including the metal oxide layer 210 and the silicon-containing layer 220. Due to the self-limiting characteristics of atomic layer deposition, its deposition process is driven by the chemical reaction between the active precursor substance and the surface of the active matrix material, and the deposited film obtained in this way is formed by the chemical reaction between the precursor and the matrix material. That is to say, when the metal oxide layer 210 covering the device to be packaged 101 is formed, the density of the metal oxide layer 210 deposition is very high, and it can be tightly combined with the surface of the device to be packaged 101 and is not affected by the surface structure of the device to be packaged 101, so as to obtain a metal oxide film with uniform thickness, thereby reducing the possibility of the first inorganic layer 200 peeling off or breaking from the surface of the device to be packaged 101 during the bending process. And because each atomic layer deposition only forms a film with a thickness of one atomic layer, precise film thickness control can be achieved. Optionally, a low-pressure atomic deposition process can be used for deposition operations to facilitate more precise film thickness control. When the metal oxide layer 210 and the silicon-containing layer 220 are thin, the grain boundaries between the two are not obvious, and they have excellent water-blocking capabilities.

[0083] The inventors of the present application have found that if the mixing ratio of the metal oxide is too small, it cannot achieve the effect of a protective layer, and if the mixing ratio of the metal oxide is too large, it is hard in itself, and after adding the silicon-containing layer 220, the overall film of the first inorganic layer 200 will be too hard, resulting in the inability to release the bending stress, and it is easy to cause the first inorganic layer 200 to break or peel off. Therefore, in some embodiments, the mixing ratio of the metal oxide layer 210 and the silicon-containing layer 220 can be set to 1:10. Specifically in some embodiments, the thickness of the metal oxide layer 210 is 1 nanometer to 5 nanometers, and the thickness of the silicon-containing layer 220 is 5 nanometers to 50 nanometers. Specifically in some embodiments, the metal oxide layer includes one or more of aluminum oxide, magnesium oxide or titanium oxide. Optionally, the metal oxide layer can be set to an aluminum oxide layer with a thickness of 5 nanometers. In this way, a metal oxide layer with better performance can be obtained through the compactness of aluminum oxide and the characteristics of being able to be closely combined with the body. Specifically in some other embodiments, the silicon-containing layer 220 includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride, so as to obtain excellent water and oxygen barrier properties.

[0084] In addition, before executing step S401, a process of covering the cathode layer 102 can be performed on the display device to facilitate the packaging step. In some embodiments, the cathode layer 102 can be formed into a transparent cathode layer 102 by using at least one of Mg:Ag, LiF:Al, Ca, Ag and Al, which can be selected according to actual needs, and the embodiment of the present application does not impose specific restrictions on this.

[0085] S402, depositing a second inorganic layer 300 on the first inorganic layer 200 using a plasma enhanced chemical vapor deposition process;

[0086] Specifically, since it takes a certain amount of time to deposit the first inorganic layer 200 by an atomic layer deposition process (for example, a deposition film with a thickness of 5 nanometers takes 50 seconds), on the basis of the first inorganic layer 200, a second inorganic layer 300 is formed by a plasma enhanced chemical vapor deposition process to reach the required height. In this way, under the condition of ensuring low water and oxygen permeability, not only the damage to the display device is reduced, but also the film-forming time of the first inorganic layer 200 is reduced. Since the ratio between the first inorganic layer 200 and the second inorganic layer 300 is too small, the water blocking ability will be reduced, and the ratio is too large, which will cause stress to rise and abnormal film quality. Therefore, in some embodiments, the thickness of the second inorganic layer 300 can be 800 nanometers to 1200 nanometers by using a plasma enhanced chemical vapor deposition process, optionally, the thickness of the metal oxide layer 210 is 1 nanometer to 5 nanometers, and the thickness of the silicon-containing layer 220 is 5 nanometers to 50 nanometers. In this way, the low water and oxygen permeability is further guaranteed. In other embodiments, the material of the second inorganic layer 300 includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride to obtain excellent water and oxygen barrier properties. Figure 5 For example, Figure 5 The diagram shows a case where the second inorganic layer 300 is a silicon dioxide layer and the first inorganic layer 200 includes an aluminum oxide layer and a silicon nitride layer. The first inorganic layer 200 and the second inorganic layer 300 are tightly and densely bonded and have excellent water and oxygen blocking capabilities.

[0087] S403, forming an organic layer 400 on the second inorganic layer 300;

[0088] Specifically, since the organic layer 400 has a certain degree of bendability, a flexible display of the display device can be achieved. In some embodiments, an organic solution can be sprayed on the second inorganic layer 300 using an inkjet printing process, and then a thermal curing process and / or a photocuring process can be used to cure the organic solution on the second inorganic layer 300 to form an organic layer 400. In some embodiments, the material of the organic layer 400 includes polymethyl methacrylate, which has a light transmittance of 92% and is easy to machine. For the overall packaging structure, if the thickness of the organic layer 400 is too large, it will affect the bending ability, and if the thickness of the organic layer 400 is too small, the ability of the organic layer 400 to delay water and oxygen intrusion will become weak. In some embodiments, the thickness of the organic layer 400 can be 1000 nanometers to 15000 nanometers. In this way, combined with the thickness control process of the first inorganic layer 200 and the second inorganic layer 300 analyzed in some of the aforementioned embodiments, the thickness of the overall packaging structure can be controlled by combining the thickness of the organic layer 400. Figure 6 For example, in Figure 5 In the schematic diagram, it can be seen that the first inorganic layer 200 and the second inorganic layer 300 have an uneven surface on the deposition interface. After the second inorganic layer 300 is deposited on the first inorganic layer 200, the following can be obtained: Figure 7 In the structure shown in FIG. 1 , the surface of the second inorganic layer 300 changes along with the deposition boundary, and also presents an uneven surface. Figure 7 As shown in FIG. 1 , water and oxygen can enter from the depression A on the surface of the second inorganic layer 300 from top to bottom along the first path p1. After the organic layer 400 is formed on the surface of the second inorganic layer 300, the organic layer 400 changes the invasion path of water and oxygen, such as Figure 8 As shown, water and oxygen are released from the second path p2. Therefore, by providing the organic layer 400, the path of water and oxygen invasion can be slowed down and changed, and stress can be released during bending.

[0089] S404 , repeat the above steps of forming the second inorganic layer 300 and forming the organic layer 400 to form an encapsulation structure including the first inorganic layer 200 , a plurality of second inorganic layers 300 and at least one organic layer 400 .

[0090] Specifically, after the organic layer 400 is formed, the second inorganic layer 300, the organic layer 400, the second inorganic layer 300, etc. are sequentially stacked on the organic layer 400, thereby forming a packaging structure. For example, the second inorganic layer 300 located on the organic layer 400 can be deposited by a plasma enhanced chemical vapor deposition process. It is understandable that the number of film layers required to be formed can be determined according to needs. For example, Figure 3 It schematically shows a situation where a first inorganic layer 200 , a second inorganic layer 300 , an organic layer 400 , and a second inorganic layer 300 are sequentially stacked on a device to be packaged 101 .

[0091] Thus, by using the atomic layer deposition process to form the first inorganic layer 200 covering the device to be packaged 101 on the outside of the device to be packaged 101, an excellent bonding interface between the first inorganic layer 200 and the device to be packaged 101 is obtained, which can not only prevent the first inorganic layer 200 from breaking or peeling off from the device to be packaged 101 when bending, but also improve the water and oxygen barrier ability, and then use the plasma enhanced chemical vapor deposition process to deposit the second inorganic layer 300 on the first inorganic layer 200, at this time, not only can the device to be packaged 101 be protected from damage by plasma, but also can reduce the film forming time of the first inorganic layer 200. In this way, the service life and reliability of the packaging structure are improved.

[0092] Fig. 9 A flow chart of a packaging method in another embodiment of the present application is shown; for ease of explanation, only the parts related to the embodiment of the present application are shown.

[0093] Please refer to Fig. 9 , and combined with reference Figure 3 , an embodiment of the present application provides a packaging method, the packaging method comprising the following steps:

[0094] S901, forming a first inorganic layer 200 covering the device to be packaged 101 on the outside of the device to be packaged 101 by using an atomic layer deposition process;

[0095] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0096] S902, depositing a second inorganic layer 300 on the first inorganic layer 200 using a plasma enhanced chemical vapor deposition process;

[0097] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0098] S903, patterning the surface of the second inorganic layer 300 facing away from the device to be packaged 101 by using a first preset process to form a first structure 310;

[0099] Specifically, since the surface of the second inorganic layer 300 has the first structure 310, when the organic solution is sprayed on the second inorganic layer 300 using inkjet printing technology in the subsequent step, it is beneficial to spread the organic solution. In some embodiments, the first preset process includes a laser process. In other embodiments, the first structure 310 includes one or more of a water ripple structure and a polygonal structure, so that it has excellent adhesion to the organic solution, which is more conducive to the spreading of the organic solution, and a more excellent organic layer 400 is obtained. In some embodiments, such as Fig.10As shown in FIG. 3 , the first structure 310 may be configured as a hexagonal structure imitating the sole of a salamander. Fig.11 As shown, the first structure 310 can be set as a water ripple structure. Optionally, the width of the concave portion A in the first structure 310 is 50 micrometers to 200 micrometers. Fig.10 For example, the width d2 between the hexagonal structures imitating the sole of the salamander can be set to 50 microns to 200 microns. Fig.11 For example, the width d1 between the water ripple structures can be set to 50 microns to 200 microns. In this way, a structure that is more conducive to the spreading of the organic solution is obtained. It should be noted that Fig.10 and Fig.11 FIG. 3 is a schematic diagram of a top view of the structure of the second inorganic layer 300 .

[0100] S904, forming an organic layer 400 on the second inorganic layer 300;

[0101] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0102] S905 , repeat the above steps of forming the second inorganic layer 300 and forming the organic layer 400 to form an encapsulation structure including the first inorganic layer 200 , a plurality of second inorganic layers 300 and at least one organic layer 400 .

[0103] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0104] Therefore, since the first structure 310 is provided, it is more conducive to manufacturing the organic layer 400 and is convenient for forming the required organic layer 400. For the overall structure, in addition to obtaining a more excellent process, the time can also be shortened.

[0105] Fig.12 This is a flow chart of a packaging method in another embodiment of the present application. For ease of explanation, only the parts related to the embodiment of the present application are shown.

[0106] S1201, forming a first inorganic layer 200 covering the device to be packaged 101 on the outside of the device to be packaged 101 by using an atomic layer deposition process;

[0107] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0108] S1202, depositing a second inorganic layer 300 on the first inorganic layer 200 using a plasma enhanced chemical vapor deposition process;

[0109] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0110] S1203, forming an organic layer 400 on the second inorganic layer 300;

[0111] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0112] S1204, roughening the surface of the organic layer 400 on one side away from the device to be packaged 101 by using a second preset process to form a second structure 410;

[0113] Specifically, since the surface of the organic layer 400 is roughened, a hydrophobic surface can be obtained, which can further effectively hinder the penetration of water vapor. In some embodiments, the second preset process includes a photolithography process or a laser process. Optionally, the organic layer 400 can be made using a photolithography process. In other embodiments, the second structure 410 includes one or more of a pit-like structure, a grid-like structure, and a prismatic structure. In this way, a surface of the organic layer 400 with better hydrophobic properties can be obtained. Specifically in some embodiments, the width of the recessed portion A in the second structure 410 is 30 microns to 80 microns. In some embodiments, in order to obtain excellent film mechanical properties, the second inorganic layer 300 located above the organic layer 400 and below the organic layer 400 can be symmetrically arranged.

[0114] S1205 , repeat the above steps of forming the second inorganic layer 300 and forming the organic layer 400 to form an encapsulation structure including the first inorganic layer 200 , a plurality of second inorganic layers 300 and at least one organic layer 400 .

[0115] Specifically, the specific process of the above steps can refer to the contents of the aforementioned embodiments, which will not be repeated here.

[0116] In this way, by disposing the second structure 410 on the surface of the organic layer 400 , the water and oxygen barrier capability of the overall packaging structure can be further improved.

[0117] It should be noted that some of the technical solutions described above can be implemented as independent embodiments in the actual implementation process, or they can be combined with each other and implemented as combined embodiments. Some of the technical solutions described above are exemplary solutions. How to combine them for implementation can be selected according to actual needs, and the embodiments of the present application are not specifically limited. In addition, when the above-mentioned embodiments of the present application are described, different embodiments are described in the corresponding order based on the idea of ​​convenient description, such as the order preset according to the requirements in the actual implementation process, rather than limiting the execution order between different embodiments. Accordingly, in the actual implementation process, if it is necessary to implement multiple embodiments provided by the embodiments of the present application, it is not necessarily necessary to follow the execution order provided when the embodiments are described in the present invention, but the execution order between different embodiments can be arranged according to the needs.

[0118] It should be understood that although Figure 4 , Fig. 9 and Fig.12 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 4 , Fig. 9 and Fig.12 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0119] Based on the same inventive concept, Figure 3 As shown, an embodiment of the present application provides a packaging structure, which is manufactured using the packaging method in the above embodiment.

[0120] Based on the same inventive concept, an embodiment of the present application provides a display device, including a display device and the packaging structure in the above embodiment. In some embodiments, the display device includes an organic light emitting diode device or a quantum dot light emitting diode device.

[0121] In this way, by using the packaging structure manufactured by the packaging methods in some of the above embodiments, the service life and reliability of the display device are improved.

[0122] It should be noted that when the packaging methods in some of the above embodiments are adopted, some packaging structures or display devices that can be obtained or formed can refer to the relevant structures illustrated in some of the above embodiments, and will not be described in detail here.

[0123] In summary, in the packaging method, packaging structure and display device provided by the embodiment of the present application, the first inorganic layer 200 covering the device to be packaged 101 is formed on the outside of the device to be packaged 101 by using the atomic layer deposition process, and the first inorganic layer 200 is set to a structure combining a metal oxide layer and a silicon-containing layer 220, so that an excellent bonding interface is obtained, which can not only prevent the first inorganic layer 200 from breaking or peeling off from the device to be packaged 101 when bending, but also improve the water and oxygen barrier ability, and then the second inorganic layer 300 is deposited on the first inorganic layer 200 by using the plasma enhanced chemical vapor deposition process. At this time, not only can the device to be packaged 101 be protected from damage by plasma, but also the film forming time of the first inorganic layer 200 can be reduced. The atomic layer deposition process is used in combination with the plasma enhanced chemical vapor deposition process, and the overall thickness of the first inorganic layer 200 and the second inorganic layer 300 can also be adjusted. Furthermore, by providing the first structure 310, it is easy to manufacture and adjust the organic layer 400. In this way, the thickness of the organic layer 400 can be adjusted to make the overall package structure thickness lower than that of the overall package structure shown in some of the above-mentioned related embodiments. By providing the second structure 410, the water and oxygen barrier capacity of the package structure can be further improved. Thus, the service life and reliability of the package structure are improved.

[0124] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0125] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A packaging method, characterized in that: The following steps are involved: Using an atomic layer deposition process to form a first inorganic layer covering the device to be packaged on the outside of the device to be packaged; Depositing a second inorganic layer on the first inorganic layer using a plasma enhanced chemical vapor deposition process; forming an organic layer on the second inorganic layer; A second preset process is used to roughen the surface of the organic layer on the side away from the device to be packaged to form a second structure, so that the surface of the organic layer on the side away from the device to be packaged is a hydrophobic surface; The width of the concave portion in the second structure is 30 μm to 80 μm; The steps of forming the second inorganic layer and forming the organic layer are repeated to form a packaging structure including the first inorganic layer, a plurality of the second inorganic layers and at least one organic layer.

2. The packaging method according to claim 1, characterized in that: The step of using an atomic layer deposition process to form a first inorganic layer covering the device to be packaged on the outside of the device to be packaged specifically includes: Using an atomic layer deposition process to form a metal oxide layer covering the device to be packaged on the outside of the device to be packaged; An atomic layer deposition process is used to form a silicon-containing layer on the metal oxide layer to form the first inorganic layer including the metal oxide layer and the silicon-containing layer.

3. The packaging method according to claim 2, characterized in that: The thickness of the metal oxide layer is 1 nanometer to 5 nanometers; and / or The thickness of the silicon-containing layer is 5 nanometers to 50 nanometers.

4. The packaging method according to claim 2, characterized in that: The metal oxide layer includes one or more of aluminum oxide, magnesium oxide or titanium oxide.

5. The packaging method according to claim 2, characterized in that: The silicon-containing layer includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride.

6. The packaging method according to claim 1, characterized in that: The forming of an organic layer on the second inorganic layer specifically includes: spraying an organic solution on the second inorganic layer by inkjet printing process; The organic solution on the second inorganic layer is cured by a thermal curing process and / or a photocuring process to form the organic layer.

7. The packaging method according to claim 1, characterized in that: Before forming an organic layer on the second inorganic layer, the method comprises: A first preset process is used to pattern a surface of the second inorganic layer on a side away from the device to be packaged, so as to form a first structure.

8. The packaging method according to claim 7, characterized in that: The first preset process includes a laser process.

9. The packaging method according to claim 7, characterized in that: The first structure includes one or more of a water ripple structure and a polygonal structure.

10. The packaging method according to claim 7, characterized in that: The width of the concave portion in the first structure is 50 micrometers to 200 micrometers.

11. The packaging method according to any one of claims 1 to 10, characterized in that: The second preset process includes a photolithography process or a laser process.

12. The packaging method according to any one of claims 1 to 10, characterized in that: The second structure includes one or more of a pit-shaped structure, a grid-shaped structure, and a prism-shaped structure.

13. The packaging method according to any one of claims 1 to 10, characterized in that: The material of the second inorganic layer includes one or more of silicon oxynitride, silicon dioxide, and silicon nitride.

14. The packaging method according to any one of claims 1 to 10, characterized in that: The thickness of the second inorganic layer is 800 nanometers to 1200 nanometers.

15. The packaging method according to any one of claims 1 to 10, characterized in that: The material of the organic layer includes polymethyl methacrylate.

16. The packaging method according to any one of claims 1 to 10, characterized in that: The thickness of the organic layer is 1000 nanometers to 15000 nanometers.

17. A packaging structure, characterized in that: The packaging method is used to manufacture the device.

18. A display device, characterized in that: A display device and the packaging structure according to claim 17; Wherein, the display device includes an organic light emitting diode device or a quantum dot light emitting diode device.

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