High frequency module and communication device

Abstract

A Q value of an inductor portion included in an output matching circuit connected to a power amplifier is increased. The output matching circuit (13A) includes a plurality of inductor portions (L1, L2), and the output matching circuit (13A) is connected to an output pad electrode (112A) of the power amplifier (11A). In the high-frequency module (1), a second main surface (92) of the first wiring board (9) faces a third main surface (101) of the second wiring board (10). An external connection terminal (80) is provided to a fourth main surface (102) of the second wiring board (10). The power amplifier (11A) is provided to a first main surface (91) of the first wiring board (9). In the output matching circuit (13A), at least a portion of a first inductor portion, which is an inductor portion (L1) closest to the output pad electrode (112A) among the plurality of inductor portions (L1, L2), is provided to the first main surface (91) of the first wiring board (9).

Description

Technical Field

[0001] This invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module having a power amplifier and a communication device having the high-frequency module. Background Technology

[0002] Conventionally, as a high-frequency module, a power amplifier module is known that includes: a wiring substrate; a semiconductor chip including a power amplifier circuit mounted on the upper surface of the wiring substrate; an inductor mounted on the upper surface of the wiring substrate; and a plurality of external connection terminals formed on the lower surface of the wiring substrate (for example, see Patent Document 1).

[0003] The power amplifier module includes an output matching circuit connected to the power amplifier circuit. The output matching circuit includes the aforementioned inductor element.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2007-88363 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] In high-frequency modules, it is sometimes desirable to improve the Q value of the inductor section included in the output matching circuit connected to the power amplifier.

[0009] The purpose of this invention is to provide a high-frequency module and communication device that can improve the Q value of the inductor section included in the output matching circuit connected to a power amplifier.

[0010] Solution for solving the problem

[0011] One aspect of the present invention relates to a high-frequency module comprising a first wiring substrate, a second wiring substrate, a power amplifier, an output matching circuit, and external connection terminals. The first wiring substrate has a first main surface and a second main surface facing each other. The second wiring substrate has a third main surface and a fourth main surface facing each other. The second wiring substrate is separated from the first wiring substrate in the thickness direction. The power amplifier has output pad electrodes. The output matching circuit includes a plurality of inductor sections, and the output matching circuit is connected to the output pad electrodes of the power amplifier. In the high-frequency module, the second main surface of the first wiring substrate faces the third main surface of the second wiring substrate. The external connection terminals are disposed on the fourth main surface of the second wiring substrate. The power amplifier is disposed on the first main surface of the first wiring substrate. In the output matching circuit, at least a portion of the first inductor section, which is the inductor section closest to the output pad electrodes among the plurality of inductor sections, is disposed on the first main surface of the first wiring substrate.

[0012] One aspect of the present invention relates to a communication device comprising a signal processing circuit and the aforementioned high-frequency module. The signal processing circuit outputs a transmit signal. The power amplifier of the high-frequency module amplifies the transmit signal from the signal processing circuit and outputs it.

[0013] The effects of the invention

[0014] The high-frequency module and communication device described above by the present invention can improve the Q value of the inductor section included in the output matching circuit connected to the power amplifier. Attached Figure Description

[0015] Figure 1 (A) is a cross-sectional view of the high-frequency module involved in Embodiment 1. Figure 1 (B) is an enlarged view of the main part of the same high-frequency module.

[0016] Figure 2 This is a top view of the main parts of the same high-frequency module.

[0017] Figure 3 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0018] Figure 4 This is the circuit diagram of the output matching circuit of the same high-frequency module.

[0019] Figure 5 Here are circuit diagrams for other examples of the output matching circuits for the same high-frequency module.

[0020] Figure 6This is a cross-sectional view of the high-frequency module involved in Variation 1 of Embodiment 1.

[0021] Figure 7 This is a cross-sectional view of the high-frequency module involved in Variation 2 of Embodiment 1.

[0022] Figure 8 This is a cross-sectional view of the high-frequency module involved in Variation 3 of Embodiment 1.

[0023] Figure 9 This is a cross-sectional view of the high-frequency module involved in variation 4 of implementation method 1.

[0024] Figure 10 (A) is a cross-sectional view of the high-frequency module involved in Embodiment 2. Figure 10 (B) is an enlarged view of the main part of the same high-frequency module.

[0025] Figure 11 This is a top view obtained after a part of the high-frequency module above broke.

[0026] Figure 12 This is a cross-sectional view obtained after a part of the high-frequency module above broke.

[0027] Figure 13 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0028] Figure 14 This is the main circuit diagram of the high-frequency module mentioned above. Detailed Implementation

[0029] The following implementation methods, etc., are referenced Figure 1 (A) Figure 1 (B) Figure 2 , Figures 6-9 , Figure 10 (A) Figure 10 (B) Figure 11 as well as Figure 12 These are all schematic diagrams, and the size and thickness ratios of the structural elements in the diagrams may not reflect the actual size ratios.

[0030] (Implementation Method 1)

[0031] Below, refer to Figure 1 (A) Figure 4 To illustrate the high-frequency module 1 and communication device 300 involved in Embodiment 1.

[0032] (1) High-frequency modules and communication devices

[0033] (1.1) Circuit structure of high-frequency module and communication device

[0034] Reference Figure 3 and Figure 4 The circuit structure of the high-frequency module 1 and the communication device 300 involved in Embodiment 1 will be explained.

[0035] The high-frequency module 1 involved in Embodiment 1 is used, for example, in a communication device 300. The communication device 300 is, for example, a portable telephone (e.g., a smartphone), but is not limited thereto; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module capable of supporting 4G (fourth-generation mobile communication) and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, the 3GPP LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity.

[0036] The high-frequency module 1 is configured, for example, to amplify the transmit signal input from the signal processing circuit 301 and output it to the antenna 310. Additionally, the high-frequency module 1 is configured to amplify the receive signal input from the antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a structural element of the high-frequency module 1, but rather a structural element of the communication device 300 incorporating the high-frequency module 1. The high-frequency module 1 according to Embodiment 1 is controlled, for example, by the signal processing circuit 301 in the communication device 300. The communication device 300 includes the high-frequency module 1 and the signal processing circuit 301. The communication device 300 also includes the antenna 310. The communication device 300 further includes a circuit board 320 on which the high-frequency module 1 is mounted (see reference 320). Figure 1 (A)). The circuit board 320 is, for example, a printed circuit board. The circuit board 320 has a ground electrode that is provided with a ground potential.

[0037] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes high-frequency signals. The RF signal processing circuit 302 performs up-conversion and other signal processing on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303, and outputs the processed high-frequency signal. Additionally, the RF signal processing circuit 302 performs down-conversion and other signal processing on the high-frequency signal (receive signal) output from the high-frequency module 1, and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates I-phase and Q-phase signals based on the baseband signals. Baseband signals include, for example, externally input audio signals, image signals, etc. The baseband signal processing circuit 303 performs IQ modulation processing by combining the I-phase and Q-phase signals and outputs the transmit signal. At this time, the transmitted signal is generated as a modulated signal (IQ signal) obtained by amplitude modulation of a carrier signal of a specified frequency with a period longer than the period of the carrier signal. The received signal, processed by the baseband signal processing circuit 303, is used for image display, for example, or for communication, as an image signal. The high-frequency module 1 transmits high-frequency signals (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

[0038] The high-frequency module 1 according to Embodiment 1 includes two power amplifiers 11A and 11B and two output matching circuits 13A and 13B. Additionally, the high-frequency module 1 includes two low-noise amplifiers 21A and 21B. Furthermore, the high-frequency module 1 includes two transmitting filters 12A and 12B and two receiving filters 22A and 22B. Additionally, the high-frequency module 1 includes a transmitting / receiving filter 32C. Furthermore, the high-frequency module 1 includes switches 4 (hereinafter also referred to as the first switch 4), 5 (hereinafter also referred to as the second switch 5), 6 (hereinafter also referred to as the third switch 6), and 7 (hereinafter also referred to as the fourth switch 7). Furthermore, the high-frequency module 1 includes a duplexer 3. Additionally, the high-frequency module 1 includes two input matching circuits 23A and 23B and three matching circuits 14A, 14B, and 14C.

[0039] In addition, the high-frequency module 1 has multiple external connection terminals 80. These external connection terminals 80 include an antenna terminal 81, two signal input terminals 82A and 82B, two signal output terminals 83A and 83B, and multiple ground terminals 85 (see reference). Figure 1 (A)). Multiple ground terminals 85 are terminals that are electrically connected to the ground electrode of the circuit board 320 provided in the communication device 300 to be provided with ground potential.

[0040] Power amplifier 11A is disposed in signal path Tx11 connected to signal input terminal 82A. Power amplifier 11A amplifies and outputs, for example, the transmitted signal from signal processing circuit 301. More specifically, power amplifier 11A amplifies and outputs a transmitted signal of a first predetermined frequency band input from signal processing circuit 301 via signal input terminal 82A. Here, the first predetermined frequency band includes, for example, a first communication frequency band and a second communication frequency band. The first communication frequency band corresponds to the transmitted signal passing through transmitting filter 12A. The second communication frequency band corresponds to the transmitted signal passing through transmitting filter 12B.

[0041] Power amplifier 11B is disposed in signal path Tx12 connected to signal input terminal 82B. Power amplifier 11B amplifies, for example, the transmitted signal from signal processing circuit 301 and outputs it. More specifically, power amplifier 11B amplifies and outputs the transmitted signal of a second predetermined frequency band input from signal processing circuit 301 via signal input terminal 82B. Here, the second predetermined frequency band includes, for example, a third communication frequency band. The third communication frequency band corresponds to the transmitted signal passing through the transmit / receive filter 32C.

[0042] Power amplifier 11A has input terminals ( Figure 1 (B) shows the input pad electrode 111A) and the output terminal ( Figure 1 (B) shows the output pad electrode 112A. The input terminal of the power amplifier 11A is connected to the signal input terminal 82A. Therefore, the input terminal of the power amplifier 11A is connected to the signal processing circuit 301 via the signal input terminal 82A. The signal input terminal 82A is a terminal for inputting a high-frequency signal (transmit signal) from an external circuit (e.g., the signal processing circuit 301) to the high-frequency module 1. The output terminal of the power amplifier 11A is connected to the common terminal 50 of the second switch 5 via the output matching circuit 13A. The high-frequency module 1 also includes a power supply wiring PS1 (see reference 1) for supplying power supply voltage from an external circuit (e.g., the signal processing circuit 301) to the power amplifier 11A. Figure 4The power supply wiring PS1 includes an inductor section L20 having a first terminal and a second terminal, which is connected to the output terminal of the power amplifier 11A. In the power supply wiring PS1, the first terminal of the inductor section L20 is connected to the output terminal of the power amplifier 11A. Additionally, the second terminal of the inductor section L20 is connected to a power supply terminal (one of a plurality of external connection terminals 80) and the first terminal of a capacitor C20 having both a first terminal and a second terminal. The second terminal of the capacitor C20 is connected to ground.

[0043] The power amplifier 11B has input terminals (input pad electrodes) and output terminals (output pad electrodes). The input terminals of the power amplifier 11B are connected to the signal input terminal 82B. Therefore, the input terminals of the power amplifier 11B are connected to the signal processing circuit 301 via the signal input terminal 82B. The signal input terminal 82B is a terminal for inputting a high-frequency signal (transmit signal) from an external circuit (e.g., the signal processing circuit 301) to the high-frequency module 1. The output terminals of the power amplifier 11B are connected to the selection terminal 71 of the fourth switch 7 via the output matching circuit 13B. The high-frequency module 1 also includes power supply wiring for supplying power supply voltage to the power amplifier 11B from an external circuit (e.g., the signal processing circuit 301).

[0044] The high-frequency module 1 may also include a controller for controlling power amplifiers 11A, 11B, etc. The controller is connected to the signal processing circuit 301 via multiple (e.g., four) control terminals. These control terminals are for inputting control signals from external circuitry (e.g., signal processing circuit 301) to the controller. The controller controls the power amplifiers 11A and 11B based on the control signals received from the multiple control terminals. These multiple control terminals may support, for example, the MIPI (Mobile Industry Processor Interface) standard. The controller has multiple terminals connected to the multiple control terminals as input sections for receiving control signals. Furthermore, the controller is connected to the power amplifiers 11A and 11B, and also to the first switch 4 and the second switch 5, and controls the first switch 4 and the second switch 5 based on the aforementioned control signals.

[0045] Output matching circuit 13A is disposed in signal path Tx11, between the output terminal of power amplifier 11A and the common terminal 50 of the second switch 5. Output matching circuit 13A is used to achieve impedance matching between power amplifier 11A and transmitting filters 12A and 12B. Figure 4As shown, the output matching circuit 13A includes, for example, multiple (two in the example) inductor sections L1 and L2 and multiple (two in the example) capacitors C1 and C2. Each of the two inductor sections L1 and L2 has a first terminal and a second terminal. Each of the two capacitors C1 and C2 has a first terminal and a second terminal. In the output matching circuit 13A, the first terminal of inductor section L1 is connected to the output terminal of power amplifier 11A, and the second terminal of inductor section L1 is connected to the first terminal of each of capacitors C1 and C2. The second terminal of capacitor C1 is connected to ground. The second terminal of capacitor C2 is connected to the first terminal of inductor section L2 and the common terminal 50 of the second switch 5. The second terminal of inductor section L2 is connected to ground. The circuit structure of the output matching circuit 13A is not limited to... Figure 4 For example, it could also be in the output matching circuit 13A, for example... Figure 5 As shown, inductor section L1 and inductor section L2 are connected in series. The second end of inductor section L1 is connected to ground via capacitor C1, and the second end of inductor section L2 is connected to ground via capacitor C2.

[0046] Output matching circuit 13B is disposed in the signal path Tx12, between the output terminal of power amplifier 11B and the selection terminal 71 of the fourth switch 7. Output matching circuit 13B is used to achieve impedance matching between power amplifier 11B and transmit / receive filter 32C. Output matching circuit 13B includes, for example, multiple inductor sections and multiple capacitors. The circuit structure of output matching circuit 13B is the same as that of output matching circuit 13A, but is not limited thereto, and may differ.

[0047] The low-noise amplifier 21A has an input terminal and an output terminal. The low-noise amplifier 21A is located in the signal path Rx11 connected to the signal output terminal 83A. The low-noise amplifier 21A amplifies the received signal of a first predetermined frequency band input to the input terminal and outputs it from the output terminal. The input terminal of the low-noise amplifier 21A is connected to the common terminal 60 of the third switch 6. The high-frequency module 1 also includes an input matching circuit 23A located between the input terminal of the low-noise amplifier 21A and the common terminal 60 of the third switch 6. The output terminal of the low-noise amplifier 21A is connected to the signal output terminal 83A. The output terminal of the low-noise amplifier 21A is connected to the signal processing circuit 301, for example, via the signal output terminal 83A. The signal output terminal 83A is a terminal for outputting the high-frequency signal (received signal) from the low-noise amplifier 21A to an external circuit (e.g., the signal processing circuit 301).

[0048] The low-noise amplifier 21B has an input terminal and an output terminal. The low-noise amplifier 21B is located in the signal path Rx12 connected to the signal output terminal 83B. The low-noise amplifier 21B amplifies the received signal of a second predetermined frequency band input to the input terminal and outputs it from the output terminal. The input terminal of the low-noise amplifier 21B is connected to selection terminal 72 of the two selection terminals 71 and 72 of the fourth switch 7. The high-frequency module 1 also includes an input matching circuit 23B located between the input terminal of the low-noise amplifier 21B and the selection terminal 72 of the fourth switch 7. The output terminal of the low-noise amplifier 21B is connected to the signal output terminal 83B. The output terminal of the low-noise amplifier 21B is connected to the signal processing circuit 301, for example, via the signal output terminal 83B. The signal output terminal 83B is used to output the high-frequency signal (received signal) from the low-noise amplifier 21B to an external circuit (e.g., the signal processing circuit 301).

[0049] Transmitting filter 12A is, for example, a filter whose passband is the transmit band of a first communication frequency band. Transmitting filter 12B is, for example, a filter whose passband is the transmit band of a second communication frequency band. Transmitting and receiving filter 32C is, for example, a filter whose passband is the transmit and receive bands of a third communication frequency band. Receiving filter 22A is, for example, a filter whose passband is the receive band of a first communication frequency band. Receiving filter 22B is, for example, a filter whose passband is the receive band of a second communication frequency band.

[0050] The first switch 4 has a common terminal 40 and multiple (here, three) selectable terminals 41 to 43. The first switch 4 is an antenna switch connected to the antenna terminal 81. In the first switch 4, the common terminal 40 is connected to the antenna terminal 81. More specifically, the common terminal 40 is connected to the antenna terminal 81 via the first filter 30 of a duplexer 3 having a first filter 30 and a second filter 31. An antenna 310 is connected to the antenna terminal 81. Selectable terminal 41 is connected via a matching circuit 14A to the connection point between the output terminal of the transmitting filter 12A and the input terminal of the receiving filter 22A. Selectable terminal 42 is connected via a matching circuit 14B to the connection point between the output terminal of the transmitting filter 12B and the input terminal of the receiving filter 22B. Selectable terminal 43 is connected via a matching circuit 14C to the transmitting / receiving filter 32C. The first switch 4 is, for example, a switch capable of connecting at least one of the multiple (here, three) selectable terminals 41 to 43 to the common terminal 40. Here, the first switch 4 is, for example, a switch capable of one-to-one and one-to-many connections.

[0051] The first switch 4 is connected to a transmitting circuit including power amplifier 11A, output matching circuit 13A, second switch 5, transmitting filter 12A, and matching circuit 14A. Additionally, the first switch 4 is connected to a transmitting circuit including power amplifier 11A, output matching circuit 13A, second switch 5, and transmitting filter 12B. Furthermore, the first switch 4 is connected to a transmitting circuit including power amplifier 11B, output matching circuit 13B, fourth switch 7, transmitting / receiving filter 32C, and matching circuit 14C. Additionally, the first switch 4 is connected to a receiving circuit including matching circuit 14A, receiving filter 22A, third switch 6, input matching circuit 23A, and low-noise amplifier 21A. Furthermore, the first switch 4 is connected to a receiving circuit including matching circuit 14B, receiving filter 22B, third switch 6, input matching circuit 23A, and low-noise amplifier 21A. Finally, the first switch 4 is connected to a receiving circuit including matching circuit 14C, transmitting / receiving filter 32C, fourth switch 7, input matching circuit 23B, and low-noise amplifier 21B.

[0052] The first switch 4 is controlled, for example, by a controller. The first switch 4 switches the connection state between the common terminal 40 and multiple select terminals 41-43 according to the control signal from the controller. The first switch 4 is, for example, a switch IC (Integrated Circuit).

[0053] The second switch 5 has a common terminal 50 and multiple (in this case, two) selectable terminals 51 to 52. The common terminal 50 is connected to the output terminal of the power amplifier 11A via the output matching circuit 13A. Selectable terminal 51 is connected to the input terminal of the transmitting filter 12A. Selectable terminal 52 is connected to the input terminal of the transmitting filter 12B. The second switch 5 is, for example, a switch capable of connecting at least one of the multiple selectable terminals 51 to 52 to the common terminal 50. Here, the second switch 5 is, for example, a switch capable of one-to-one and one-to-many connections. The second switch 5 is a frequency band selection switch for switching signal paths for multiple transmitting signals with different communication frequency bands.

[0054] The second switch 5 is controlled, for example, by a controller. The second switch 5, for example, switches the connection state between the common terminal 50 and multiple select terminals 51-52 according to a control signal from the controller. The second switch 5 is, for example, a switch IC.

[0055] The third switch 6 has a common terminal 60 and multiple selectable terminals 61-62. The common terminal 60 is connected to the input terminal of the low-noise amplifier 21A. The selectable terminals 61 are connected to the output terminal of the receiving filter 22A. The selectable terminals 62 are connected to the output terminal of the receiving filter 22B. The third switch 6 is, for example, a switch capable of connecting at least one of the multiple selectable terminals 61-62 to the common terminal 60. Here, the third switch 6 is, for example, a switch capable of one-to-one and one-to-many connections.

[0056] The third switch 6 is controlled, for example, by a controller. The third switch 6, for example, switches the connection state between the common terminal 60 and multiple select terminals 61-62 according to a control signal from the controller. The third switch 6 is, for example, a switch IC.

[0057] As described above, the co-current duplexer 3 has a first filter 30 and a second filter 31. The first filter 30 is, for example, a low-pass filter with a passband that includes a first predetermined frequency band and a second predetermined frequency band. The second filter 31 is, for example, a high-pass filter with a passband that is on the higher side of the frequency band than the frequency band that includes the first predetermined frequency band and the second predetermined frequency band.

[0058] Input matching circuit 23A is disposed in the signal path between the input terminal of low-noise amplifier 21A and the common terminal 60 of third switch 6. Input matching circuit 23A is used to achieve impedance matching between low-noise amplifier 21A and receiving filters 22A, 22B. Input matching circuit 23A is composed of, for example, an inductor, but is not limited thereto; for example, it may sometimes include multiple inductors and multiple capacitors.

[0059] Input matching circuit 23B is disposed in the signal path between the input terminal of low-noise amplifier 21B and the selection terminal 72 of the fourth switch 7. Input matching circuit 23B is a circuit used to achieve impedance matching between low-noise amplifier 21B and transmit / receive filter 32C. Input matching circuit 23B is composed of, for example, an inductor, but is not limited thereto; for example, it may sometimes include multiple inductors and multiple capacitors.

[0060] Matching circuit 14A is disposed between transmitting filter 12A and receiving filter 22A and the selection terminal 41 of first switch 4. Matching circuit 14A is a circuit used to achieve impedance matching between first switch 4 and antenna 310 connected to antenna terminal 81 and transmitting filter 12A and receiving filter 22A. Matching circuit 14A is composed of, for example, an inductor, but is not limited thereto; for example, it may sometimes include multiple inductors and multiple capacitors.

[0061] Matching circuit 14B is disposed between transmitting filter 12B and receiving filter 22B and the first switch 4. Matching circuit 14B is a circuit used to achieve impedance matching between the first switch 4, the antenna 310 connected to antenna terminal 81, and transmitting filter 12B and receiving filter 22B. Matching circuit 14B is composed of, for example, an inductor, but is not limited thereto; for example, it may sometimes include multiple inductors and multiple capacitors.

[0062] Matching circuit 14C is disposed between transmit / receive filter 32C and first switch 4. Matching circuit 14C is a circuit used to achieve impedance matching between first switch 4, antenna 310 connected to antenna terminal 81, and transmit / receive filter 32C. Matching circuit 14C is composed of, for example, an inductor, but is not limited thereto; for example, it may sometimes include multiple inductors and multiple capacitors.

[0063] (1.2) Structure of the high-frequency module

[0064] Below, refer to Figure 1 (A) Figure 1 (B) Figure 2 as well as Figure 3 To illustrate the structure of high-frequency module 1.

[0065] The high-frequency module 1 includes a first wiring substrate 9, a second wiring substrate 10, a power amplifier 11A, an output matching circuit 13A, and an external connection terminal 80.

[0066] The first wiring substrate 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the first wiring substrate 9. The second wiring substrate 10 has a third main surface 101 and a fourth main surface 102 facing each other in the thickness direction D2 of the second wiring substrate 10. The second wiring substrate 10 is separated from the first wiring substrate 9 in the thickness direction D1 of the first wiring substrate 9.

[0067] The first wiring substrate 9 is, for example, a printed circuit board, an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. Here, the first wiring substrate 9 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D1 of the first wiring substrate 9. The multiple conductive layers are formed with a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the first wiring substrate 9. The material of each conductive layer is, for example, copper. The multiple conductive layers include a ground layer. In the high-frequency module 1, multiple ground terminals 85 are electrically connected to the ground layer via through-hole conductors or the like in the first wiring substrate 9.

[0068] The first wiring substrate 9 can also be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. If there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. If there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may also include one or more redistribution portions. In the wiring structure, the first surface of two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 91 of the first wiring substrate 9, and the second surface is the second main surface 92 of the first wiring substrate 9. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate, or it can be a substrate composed of multiple layers.

[0069] The first main surface 91 and the second main surface 92 of the first wiring substrate 9 are separated in the thickness direction D1 of the first wiring substrate 9 and intersect the thickness direction D1 of the first wiring substrate 9. The first main surface 91 of the first wiring substrate 9 is, for example, orthogonal to the thickness direction D1 of the first wiring substrate 9, but it can also be, for example, a surface that is not orthogonal to the thickness direction D1 and includes the side surface of the conductor portion, etc. Similarly, the second main surface 92 of the first wiring substrate 9 is, for example, orthogonal to the thickness direction D1 of the first wiring substrate 9, but it can also be, for example, a surface that is not orthogonal to the thickness direction D1 and includes the side surface of the conductor portion, etc. Furthermore, the first main surface 91 and the second main surface 92 of the first wiring substrate 9 may have fine irregularities, recesses, or protrusions. When viewed from above in the thickness direction D1 of the first wiring substrate 9, the first wiring substrate 9 has a rectangular shape, but it is not limited to this; for example, it can also be a square shape.

[0070] The second wiring substrate 10 is, for example, a printed circuit board, an LTCC substrate, an HTCC substrate, or a resin multilayer substrate. Here, the second wiring substrate 10 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D2 of the second wiring substrate 10. The multiple conductive layers are formed in a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D2 of the second wiring substrate 10. The material of each conductive layer is, for example, copper. The multiple conductive layers include a ground layer. In the high-frequency module 1, multiple ground terminals 85 are electrically connected to the ground layer via through-hole conductors or the like in the second wiring substrate 10.

[0071] The second wiring substrate 10 can also be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. If there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. If there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may also include one or more redistribution portions. In the wiring structure, the first surface of two surfaces facing each other in the thickness direction of the multilayer structure is the third main surface 101 of the second wiring substrate 10, and the second surface is the fourth main surface 102 of the second wiring substrate 10. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate, or it can be a substrate composed of multiple layers.

[0072] The third main surface 101 and the fourth main surface 102 of the second wiring substrate 10 are separated in the thickness direction D2 of the second wiring substrate 10 and intersect the thickness direction D2 of the second wiring substrate 10. The third main surface 101 of the second wiring substrate 10 is, for example, orthogonal to the thickness direction D2 of the second wiring substrate 10, but it may also be a surface that is not orthogonal to the thickness direction D2, including the side surface of the conductor portion, etc. Similarly, the fourth main surface 102 of the second wiring substrate 10 is, for example, orthogonal to the thickness direction D2 of the second wiring substrate 10, but it may also be a surface that is not orthogonal to the thickness direction D2, including the side surface of the conductor portion, etc. Furthermore, the third main surface 101 and the fourth main surface 102 of the second wiring substrate 10 may have fine irregularities, recesses, or protrusions. When viewed from above in the thickness direction D2 of the second wiring substrate 10, the outer peripheral shape of the second wiring substrate 10 is the same as the outer peripheral shape of the first wiring substrate 9, but it is not limited to this and may be different.

[0073] The high-frequency module 1 includes the two power amplifiers 11A and 11B, multiple inductor sections L1 and L2 and multiple capacitors C1 and C2 of the output matching circuit 13A, multiple inductor sections and multiple capacitors of the output matching circuit 13B, two low-noise amplifiers 21A and 21B, two transmitting filters 12A and 12B, two receiving filters 22A and 22B, a transmitting and receiving filter 32C, a first switch 4, a second switch 5, a third switch 6, a fourth switch 7, inductors of the input matching circuit 23A, inductors of the input matching circuit 23B, inductors of the matching circuit 14A, inductors of the matching circuit 14B, inductors of the matching circuit 14C, a duplexer 3, and a controller, which together form multiple circuit element sections.

[0074] On the first main surface 91 of the first wiring substrate 9, a plurality of inductor sections L1, L2 of a power amplifier 11A and an output matching circuit 13A, and a plurality of capacitors C1, C2 are disposed. The power amplifier 11A is, for example, a GaAs-based IC chip having a power amplifier circuit including an HBT (Heterojunction Bipolar Transistor). The power amplifier circuit includes an output stage amplifier circuit and a driver stage amplifier circuit. The power amplifier 11A is not limited to a GaAs-based IC chip; for example, it may also be a Si-based IC chip or a SiGe-based IC chip having a power amplifier circuit. When viewed from the thickness direction D1 of the first wiring substrate 9, the outer periphery of the power amplifier 11A is quadrilateral. The first inductor section L1, which is the closest inductor section to the output pad electrode 112A of the power amplifier 11A among the plurality of inductor sections L1, L2 of the output matching circuit 13A, is a wiring inductor 95 disposed on the first main surface 91 of the first wiring substrate 9. Here, the wiring inductor 95 is formed using a portion of the outermost conductive layer among the multiple conductive layers of the first wiring substrate 9. Furthermore, the inductor section L2 is a surface-mount inductor mounted on the first wiring substrate 9. The inductor section L2 is not limited to a surface-mount inductor and can also be a wiring inductor. The multiple capacitors C1 and C2 are surface-mount electronic components mounted on the first wiring substrate 9. Here, "mounted" refers to both cases where the circuit element section is disposed on the first wiring substrate 9 (in the case of mechanical connection) and cases where the circuit element section is electrically connected to the first wiring substrate 9 (in the case of appropriate conductor sections).

[0075] In addition, multiple inductor sections and multiple capacitors of a power amplifier 11B and an output matching circuit 13B are disposed on the first main surface 91 of the first wiring substrate 9. Like the power amplifier 11A, the power amplifier 11B is a GaAs-based IC chip with a power amplification circuit, but it can also be a Si-based IC chip or a SiGe-based IC chip with a power amplification circuit. The first inductor section of the multiple inductor sections of the output matching circuit 13B, closest to the output pad electrode of the power amplifier 11B, is a wiring inductor disposed on the first main surface 91 of the first wiring substrate 9. The multiple capacitors of the output matching circuit 13B are surface-mount electronic components mounted on the first wiring substrate 9.

[0076] On the first main surface 91 of the first wiring substrate 9, a second switch 5 and transmitting filters 12A and 12B are also disposed. Here, the second switch 5 and transmitting filters 12A and 12B are mounted on the first main surface 91 of the first wiring substrate 9. More specifically, the second switch 5 and transmitting filters 12A and 12B are mounted on the first main surface 91 of the first wiring substrate 9 in a flip-chip mounting manner. Each of the two transmitting filters 12A and 12B is, for example, a trapezoidal filter, having multiple (e.g., four) series arm resonators and multiple (e.g., three) parallel arm resonators. Each of the two transmitting filters 12A and 12B is, for example, an elastic wave filter, wherein each of the multiple series arm resonators and multiple parallel arm resonators of each transmitting filter is composed of an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In the surface acoustic wave filter, each of the multiple series arm resonators and multiple parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

[0077] On the second main surface 92 of the first wiring substrate 9, a first switch 4, receiving filters 22A and 22B, a transmitting / receiving filter 32C, a duplexer 3, and a controller are disposed. Here, the first switch 4, receiving filters 22A and 22B, transmitting / receiving filter 32C, and controller are mounted on the second main surface 92 of the first wiring substrate 9. More specifically, the first switch 4, receiving filters 22A and 22B, and transmitting / receiving filter 32C are mounted on the second main surface 92 of the first wiring substrate 9 using a flip-chip mounting method. Each of the two receiving filters 22A and 22B is, for example, a trapezoidal filter, having multiple (e.g., four) series arm resonators and multiple (e.g., three) parallel arm resonators. Each of the two receiving filters 22A and 22B is, for example, an elastic wave filter, wherein each of the multiple series arm resonators and multiple parallel arm resonators of each receiving filter is composed of an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave filter utilizing surface acoustic waves. In the surface elastic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are each, for example, SAW resonators. The first filter 30 and the second filter 31 of the co-current duplexer 3 each include, for example, multiple inductors and capacitors. The first filter 30 and the second filter 31 of the co-current duplexer 3 also include multiple inductors and multiple capacitors. The first filter 30 and the second filter 31 can also be an IPD (Integrated Passive Device). The controller is an IC chip with at least the function of controlling power amplifiers 11A and 11B.

[0078] On the fourth main surface 102 of the second wiring substrate 10, for example, a transmit / receive filter 32C and a fourth switch 7 are disposed. The transmit / receive filter 32C is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The transmit / receive filter 32C is, for example, an elastic wave filter, in which the multiple series-arm resonators and multiple parallel-arm resonators are each composed of an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In the SAW filter, each of the multiple series-arm resonators and multiple parallel-arm resonators is, for example, a SAW resonator.

[0079] Additionally, on the fourth main surface 102 of the second wiring substrate 10, two low-noise amplifiers 21A and 21B, a third switch 6, an inductor for the input matching circuit 23A, an inductor for the input matching circuit 23B, and multiple external connection terminals 80 are disposed. Here, the two low-noise amplifiers 21A and 21B are Si-based IC chips with amplification circuits. In the high-frequency module 1, the low-noise amplifiers 21A and 21B can also be integrated into a single chip. Furthermore, in the high-frequency module 1, the low-noise amplifiers 21A and 21B, along with the third switch 6, can also be integrated into a single chip.

[0080] The inductors of the two input matching circuits 23A and 23B are, for example, chip inductors. The inductors of the two input matching circuits 23A and 23B are, for example, mounted on the fourth main surface 102 of the second wiring substrate 10, but are not limited thereto.

[0081] The inductors of each of the multiple matching circuits 14A, 14B, and 14C are, for example, chip inductors. The inductors of each of the multiple matching circuits 14A, 14B, and 14C are mounted, for example, on the second main surface 92 of the first wiring substrate 9, but are not limited thereto.

[0082] On the fourth main surface 102 of the second wiring substrate 10, a plurality of external connection terminals 80 are disposed. The material of the plurality of external connection terminals 80 is, for example, copper or a copper alloy. Each of the plurality of external connection terminals 80 is a columnar electrode. Here, the columnar electrode is, for example, a cylindrical electrode.

[0083] As described above, the plurality of external connection terminals 80 include an antenna terminal 81, two signal input terminals 82A and 82B, two signal output terminals 83A and 83B, a plurality of control terminals, and a plurality of ground terminals 85. As described above, the plurality of ground terminals 85 are electrically connected to at least one of the ground planes of the first wiring substrate 9 and the second wiring substrate 10. The ground plane is the circuit ground of the high-frequency module 1, and the plurality of circuit element portions of the high-frequency module 1 include circuit element portions electrically connected to the ground plane.

[0084] The high-frequency module 1 also includes a first resin layer 16. The first resin layer 16 covers a plurality of circuit element portions (two power amplifiers 11A, 11B, two inductor portions L1, L2, two capacitors C1, C2, a second switch 5, two transmitting filters 12A, 12B, etc.) disposed on the first main surface 91 of the first wiring substrate 9. The first resin layer 16 comprises resin. In addition to resin, the first resin layer 16 may also include fillers.

[0085] In addition, the high-frequency module 1 also includes a second resin layer 17. The second resin layer 17 covers a portion of each of the multiple circuit element portions (two low-noise amplifiers 21A, 21B, etc.) disposed on the fourth main surface 102 of the second wiring substrate 10, as well as a portion of each of the multiple external connection terminals 80. The second resin layer 17 is formed such that the front end face of each of the multiple external connection terminals 80 is exposed. The second resin layer 17 includes resin. In addition to resin, the second resin layer 17 may also include filler. The material of the second resin layer 17 may be the same as the material of the first resin layer 16, or it may be a different material. The second resin layer 17 may also be formed such that the main surface of each of the multiple circuit element portions disposed on the fourth main surface 102 of the second wiring substrate 10 is exposed on the side opposite to the second wiring substrate 10 side.

[0086] In addition, the high-frequency module 1 also includes a third resin layer 18. The third resin layer 18 covers a plurality of circuit element portions (first switch 4, receiving filters 22A, 22B, transmitting and receiving filters 32C, duplexer 3, and controller, etc.) disposed on the second main surface 92 of the first wiring substrate 9. The third resin layer 18 includes resin. In addition to resin, the third resin layer 18 may also include filler. The material of the third resin layer 18 may be the same as the material of the first resin layer 16, or it may be a different material. The third resin layer 18 is located between the second main surface 92 of the first wiring substrate 9 and the third main surface 101 of the second wiring substrate 10. In the high-frequency module 1, for example, the third resin layer 18 is bonded to the third main surface 101 of the second wiring substrate 10 (e.g., by heat pressing).

[0087] In addition, the high-frequency module 1 also includes a through electrode 94. When viewed from above in the thickness direction D1 of the first wiring substrate 9, the through electrode 94 overlaps with the power amplifier 11A. The through electrode 94 is connected to the power amplifier 11A and penetrates the first wiring substrate 9 and the second wiring substrate 10. The through electrode 94 includes a conductor portion 941 penetrating the first wiring substrate 9, a conductor portion 942 penetrating the third resin layer 18, and a conductor portion 943 penetrating the second wiring substrate 10. The through electrode 94 connects the power amplifier 11A to heat dissipation terminals 86 included in a plurality of external connection terminals 80. The heat dissipation terminals 86 are connected to the ground of the circuit board 320. Preferably, the high-frequency module 1 includes a plurality of through electrodes 94 connected to the power amplifier 11A.

[0088] (2) Summary

[0089] (2.1) High-frequency module

[0090] The high-frequency module 1 according to Embodiment 1 includes a first wiring substrate 9, a second wiring substrate 10, a power amplifier 11A, an output matching circuit 13A, and an external connection terminal 80. The first wiring substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The second wiring substrate 10 has a third main surface 101 and a fourth main surface 102 facing each other. The second wiring substrate 10 is separated from the first wiring substrate 9 in the thickness direction D1. The power amplifier 11A has an output pad electrode 112A. The output matching circuit 13A includes multiple inductor sections L1 and L2, and is connected to the output pad electrode 112A of the power amplifier 11A. In the high-frequency module 1, the second main surface 92 of the first wiring substrate 9 faces the third main surface 101 of the second wiring substrate 10. The external connection terminal 80 is disposed on the fourth main surface 102 of the second wiring substrate 10. The power amplifier 11A is disposed on the first main surface 91 of the first wiring substrate 9. In the output matching circuit 13A, the first inductor section of the inductor section L1, which is closest to the output pad electrode 112A among the multiple inductor sections L1 and L2, is disposed on the first main surface 91 of the first wiring board 9.

[0091] The high-frequency module 1 according to Embodiment 1 can improve the Q value of the inductor section L1 included in the output matching circuit 13A connected to the power amplifier 11A. In the high-frequency module 1 according to Embodiment 1, the first inductor section of the inductor section L1 closest to the output pad electrode 112A among the plurality of inductor sections L1 and L2 of the output matching circuit 13A is disposed on the first main surface 91 of the first wiring substrate 9. As a result, the parasitic capacitance generated between the inductor section L1 and the ground of the circuit board 320 can be reduced, and the Q value of the inductor section L1 can be improved.

[0092] In the high-frequency module 1 according to Embodiment 1, the entire first inductor of the inductor L1 closest to the output pad electrode 112A among the plurality of inductor sections L1 and L2 is disposed on the first main surface 91 of the first wiring substrate 9. However, it is not limited to this; at least a portion of the first inductor may also be disposed on the first main surface 91 of the first wiring substrate 9. Here, compared to the case where a portion of the first inductor is disposed on the first main surface 91 of the first wiring substrate 9 and the remaining portion of the first inductor is disposed in the first wiring substrate 9, disposing the entire first inductor on the first main surface 91 of the first wiring substrate 9 can improve the Q value of the first inductor.

[0093] In the high-frequency module 1, regarding the output matching circuit 13B connected to the power amplifier 11B, the first inductor section, which is the inductor section closest to the output pad electrode among the multiple inductor sections of the output matching circuit 13B, is disposed on the first main surface 91 of the first wiring substrate 9. Therefore, the high-frequency module 1 according to Embodiment 1 can improve the Q value of the first inductor section included in the output matching circuit 13B connected to the power amplifier 11B.

[0094] The high-frequency module 1 according to Embodiment 1 includes a first wiring substrate 9 and a second wiring substrate 10. The first wiring substrate 9 and the second wiring substrate 10 are separated in the thickness direction D1 of the first wiring substrate 9. Therefore, the high-frequency module 1 can be miniaturized when viewed from the thickness direction D1 of the first wiring substrate 9, and the degree of freedom in the arrangement of multiple circuit element sections can also be improved.

[0095] Furthermore, in the high-frequency module 1 according to Embodiment 1, the first inductor section (inductor section L1) is a wiring inductor 95. Therefore, in the high-frequency module 1 according to Embodiment 1, a height reduction can be achieved.

[0096] Furthermore, the high-frequency module 1 according to Embodiment 1 also includes a through electrode 94. When viewed from above in the thickness direction D1 of the first wiring substrate 9, the through electrode 94 overlaps with the power amplifier 11A. The through electrode 94 is connected to the power amplifier 11A and passes through the first wiring substrate 9 and the second wiring substrate 10. As a result, heat dissipation can be improved in the high-frequency module 1 according to Embodiment 1.

[0097] Furthermore, in the high-frequency module 1 according to Embodiment 1, no circuit element portions overlapping with the power amplifier 11 when viewed from above in the thickness direction D1 are disposed on the second main surface 92 of the first wiring substrate 9, the third main surface 101 of the second wiring substrate 10, and the fourth main surface 102 of the second wiring substrate 10. Therefore, the high-frequency module 1 according to Embodiment 1 has the advantage of easily dissipating heat generated in the power amplifier 11, and the characteristics of the circuit element portions disposed on any of the second main surface 92 of the first wiring substrate 9, the third main surface 101 of the second wiring substrate 10, and the fourth main surface 102 are less susceptible to the influence of heat from the power amplifier 11.

[0098] Furthermore, the high-frequency module 1 according to Embodiment 1 also includes low-noise amplifiers 21A and 21B. The low-noise amplifiers 21A and 21B are disposed on the second wiring substrate 10. Thus, the high-frequency module 1 according to Embodiment 1 can be used for transmitting a transmission signal and receiving a reception signal, and can improve the isolation between the power amplifier 11A and the low-noise amplifiers 21A and 21B.

[0099] (2.2) Communication device

[0100] The communication device 300 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 301. The signal processing circuit 301 performs signal processing on the transmitted signal. The high-frequency module 1 amplifies the transmitted signal from the signal processing circuit 301 and outputs it. The high-frequency module 1 transmits the transmitted signal between the antenna 310 and the signal processing circuit 301.

[0101] The communication device 300 according to Embodiment 1 includes a high-frequency module 1, which can improve the Q value of the inductor section L1 included in the output matching circuit 13A connected to the power amplifier 11A. Multiple electronic components constituting the signal processing circuit 301 can be mounted on the aforementioned circuit board 320, or on a different circuit board (a second circuit board) than the first circuit board on which the high-frequency module 1 is mounted.

[0102] (3) Variations of the high-frequency module

[0103] (3.1) Variation Example 1

[0104] Reference Figure 6 The high-frequency module 1a according to Variation 1 of Embodiment 1 will be described below. For the high-frequency module 1a according to Variation 1, the same reference numerals are used to label the same structural elements as those in the high-frequency module 1 according to Embodiment 1, and the descriptions are omitted.

[0105] The high-frequency module 1a involved in Modification Example 1 differs from the high-frequency module 1 involved in Embodiment 1 in the following aspects: the inductor section L1 of the output matching circuit 13A is a chip inductor 15.

[0106] In the high-frequency module 1a involved in Modification 1, the output matching circuit 13A connected to the power amplifier 11A can be further improved (see reference). Figure 4 The Q value of the inductor section L1 included in the inductor.

[0107] (3.2) Variation Example 2

[0108] Reference Figure 7 The high-frequency module 1b described in Modification 2 of Embodiment 1 will be explained here. For the high-frequency module 1b of Modification 2, the same reference numerals are used to label the same structural elements as those in the high-frequency module 1 of Embodiment 1, and descriptions are omitted.

[0109] The high-frequency module 1b involved in Modification 2 differs from the high-frequency module 1 involved in Embodiment 1 in the following aspects: it also has a shielding layer 19.

[0110] The material of the shielding layer 19 is, for example, metal. The shielding layer 19 covers the main surface and outer peripheral surface of the first resin layer 16, the outer peripheral surface of the first wiring substrate 9, the outer peripheral surface of the third resin layer 18, and the outer peripheral surface of the second wiring substrate 10. The shielding layer 19 is in contact with the ground layer of the first wiring substrate 9 and the ground layer of the second wiring substrate 10. Therefore, the potential of the shielding layer 19 can be set to be approximately the same as the potential of each ground layer.

[0111] In the high-frequency module 1b involved in Modification Example 2, it is possible to suppress the intrusion of noise such as radiated noise from the transmitting circuit including the power amplifier 11A and the output matching circuit 13A to the outside of the high-frequency module 1b, as well as electromagnetic waves from the outside of the high-frequency module 1b.

[0112] (3.3) Variation Example 3

[0113] Reference Figure 8 The high-frequency module 1c involved in Variation 3 of Embodiment 1 will be described below. Regarding the high-frequency module 1c involved in Variation 3, the same reference numerals are used to label the same structural elements as those in the high-frequency module 1 involved in Embodiment 1, and the descriptions are omitted.

[0114] The high-frequency module 1c involved in Modification Example 3 differs from the high-frequency module 1 involved in Embodiment 1 in the following aspects: the power amplifier 11B is disposed on the third main surface 101 of the second wiring substrate 10.

[0115] Furthermore, the high-frequency module 1c involved in Modification 3 differs from the high-frequency module 1 involved in Embodiment 1 in the following aspects: in the output matching circuit 13B (refer to...) Figure 4 The inductor section L1B closest to the output electrode pad of the power amplifier 11B is a chip inductor 15B.

[0116] In the high-frequency module 1c involved in Modification 3, the output matching circuit 13B connected to the power amplifier 11B (see reference) Figure 4 The inductor section L1B included in the inductor section can use a chip inductor 15B with a higher Q value compared to a wiring inductor.

[0117] (3.4) Variation Example 4

[0118] Reference Figure 9 The high-frequency module 1d according to Variation 4 of Embodiment 1 will be described below. For the high-frequency module 1d according to Variation 4, the same reference numerals are used to label the same structural elements as those of the high-frequency module 1 according to Embodiment 1, and the description is omitted.

[0119] The high-frequency module 1d in Modification 4 differs from the high-frequency module 1 in Embodiment 1 in that the plurality of external connection terminals 80 are spherical bumps. Furthermore, the high-frequency module 1d in Modification 4 differs from the high-frequency module 1 in Embodiment 1 in that it does not possess the second resin layer 17 of the high-frequency module 1 in Embodiment 1. The high-frequency module 1d in Modification 4 may also include a bottom filling portion disposed between each circuit element portion (two low-noise amplifiers 21A, 21B, etc.) disposed on the fourth main surface 102 of the second wiring substrate 10 and the fourth main surface 102 of the second wiring substrate 10.

[0120] The material of the spherical bumps of each external connection terminal constituting the plurality of external connection terminals 80 is, for example, gold, copper, or solder.

[0121] Regarding the multiple external connection terminals 80, it is also possible that external connection terminals 80 composed of spherical bumps and external connection terminals 80 composed of columnar electrodes coexist.

[0122] (Implementation Method 2)

[0123] Reference Figure 10 (A) Figure 10 (B) Figures 11-14 The high-frequency module 1e and communication device 300e according to Embodiment 2 will be described below. For the high-frequency module 1e and communication device 300e according to Embodiment 2, structural elements that are identical to those in the high-frequency module 1 and communication device 300 according to Embodiment 1 will be labeled with the same reference numerals and their descriptions will be omitted.

[0124] First, refer to Figure 13 and Figure 14 The circuit structure of the high-frequency module 1e and the communication device 300e involved in Embodiment 2 will be explained.

[0125] The high-frequency module 1e according to Embodiment 2 differs from the high-frequency module 1 according to Embodiment 1 in the following aspects: it has a differential amplifier circuit 100A instead of the power amplifier 11A and the output matching circuit 13A of the high-frequency module 1 according to Embodiment 1, and a differential amplifier circuit 100B instead of the power amplifier 11B and the output matching circuit 13B.

[0126] The differential amplifier circuit 100A includes a power amplifier 11C (hereinafter also referred to as the first power amplifier 11C), a power amplifier 11D (hereinafter also referred to as the second power amplifier 11D), and an unbalanced-to-balanced conversion circuit 110. The first power amplifier 11C has an input pad electrode 111C and an output pad electrode 112C (see reference 111C). Figure 10 (B) and Figure 11The second power amplifier 11D has input pad electrodes and output pad electrodes 112D (see reference). Figure 11 ).

[0127] The unbalanced-to-balanced converter circuit 110 has an unbalanced terminal, a first balanced terminal, and a second balanced terminal. The unbalanced-to-balanced converter circuit 110 is a balun. In the high-frequency module 1e, the first balanced terminal of the unbalanced-to-balanced converter circuit 110 is connected to the first power amplifier 11C, and the second balanced terminal is connected to the second power amplifier 11D.

[0128] The differential amplifier circuit 100A also includes an amplifying element 11E. The amplifying element 11E has input and output terminals. The input terminal of the amplifying element 11E is connected to the signal input terminal 82A. The output terminal of the amplifying element 11E is connected to the unbalanced terminal of the unbalanced-to-balanced converter circuit 110. The first balanced terminal of the unbalanced-to-balanced converter circuit 110 is connected to the input terminal of the first power amplifier 11C. The second balanced terminal of the unbalanced-to-balanced converter circuit 110 is connected to the input terminal of the second power amplifier 11D. A bias voltage Vcc1 is applied to the output terminal of the amplifying element 11E.

[0129] The output matching circuit 13C includes multiple inductor sections L11A, L11B, L12, and L13. Additionally, the output matching circuit 13C includes multiple capacitors C11, C12, and C13.

[0130] Multiple inductor sections L11A, L11B, L12, and L13 each have a first terminal and a second terminal. Additionally, multiple capacitor sections C11, C12, and C13 each have a first terminal and a second terminal.

[0131] The first terminal of inductor section L11A is connected to the output terminal (output pad electrode 112C) of power amplifier 11C. The first terminal of inductor section L11B is connected to the output terminal (output pad electrode 112D) of power amplifier 11D.

[0132] An inductor section L12 is connected between the second terminal of inductor section L11A and the second terminal of inductor section L11B. Additionally, a capacitor C11 is connected between the second terminal of inductor section L11A and the second terminal of inductor section L11B. In other words, capacitor C11 is connected in parallel with inductor section L12.

[0133] The first terminal of inductor L13 is connected to the first terminal of capacitor C12. The second terminal of inductor L13 is connected to ground. The second terminal of capacitor C12 is connected to the common terminal 50 of the second switch 5 and the first terminal of capacitor C13. The second terminal of capacitor C13 is connected to ground.

[0134] The output matching circuit 13C includes a transformer T1 with inductor L12 as the primary winding and inductor L13 as the secondary winding. In other words, the high-frequency module 1e has a differential amplifier circuit 100A including a first power amplifier 11C, a second power amplifier 11D, and the transformer T1.

[0135] Transformer T1 includes a primary winding (inductor section L12) having a first terminal and a second terminal, and a secondary winding (inductor section L13) having a first terminal and a second terminal. The first terminal of the primary winding (inductor section L12) is connected to the output terminal of the first power amplifier 11C via inductor section L11A, and the second terminal of the primary winding (inductor section L12) is connected to the output terminal of the second power amplifier 11D via inductor section L11B. Additionally, a power supply wiring PS2 for supplying a bias voltage Vcc2 from the outside of the high-frequency module 1e is connected at the midpoint of the primary winding. The first terminal of the secondary winding (inductor section L13) is connected to the common terminal 50 of the second switch 5 via capacitor C12. The second terminal of the secondary winding is connected to ground (ground terminal 85).

[0136] In the differential amplifier circuit 100A, the high-frequency signal input from the signal input terminal 82A is amplified by the amplifying element 11E. The high-frequency signal amplified by the amplifying element 11E undergoes unbalanced-to-balanced conversion through the unbalanced-to-balanced converter circuit 110. At this time, a non-inverting input signal is output from the first balanced terminal of the unbalanced-to-balanced converter circuit 110, and an inverting input signal is output from the second balanced terminal of the unbalanced-to-balanced converter circuit 110.

[0137] The non-inverting input signal amplified by the first power amplifier 11C and the inverting input signal amplified by the second power amplifier 11D maintain an out-of-phase state, and impedance transformation is performed by inductors L11A and L11B, transformer T1, and capacitor C11. Thus, through inductors L11A and L11B, transformer T1, and capacitor C11, the output impedance of the differential amplifier circuit 100A is impedance matched with the input impedances of the second switch 5 and the transmitting filters 12A and 12B. In the output matching circuit 13C of the differential amplifier circuit 100A, capacitors C12 and C13 also contribute to the aforementioned impedance matching.

[0138] In the differential amplifier circuit 100A, the first power amplifier 11C and the second power amplifier 11D operate in out-of-phase. At this time, the fundamental currents in the first power amplifier 11C and the second power amplifier 11D are out of phase, meaning they flow in opposite directions. Therefore, no fundamental current flows in the wiring to the power supply line PS2 and ground. Thus, in the differential amplifier circuit 100A, the unwanted current inflow to the power supply line PS2 and the aforementioned wiring can be ignored, thereby suppressing the decrease in power gain observed in conventional power amplifiers. Furthermore, the differential amplifier circuit 100A uses two power amplifiers 11C and 11D, which makes the impedance ratio between the combined output impedance of the two power amplifiers 11C and 11D and the input impedance of the circuit elements connected to the output side of the differential amplifier circuit 100A small, thereby reducing the matching loss of the amplified high-frequency signal. Furthermore, in the differential amplifier circuit 100A, the non-inverting input signal amplified by the first power amplifier 11C and the inverting input signal amplified by the second power amplifier 11D are combined. Therefore, the noise components superimposed on both the non-inverting input signal and the inverting input signal can be canceled out, for example, harmonic components and other unwanted waves can be reduced.

[0139] Furthermore, the amplifying element 11E is not a necessary structural element for the differential amplifier circuit 100A. Additionally, the circuit structure of the unbalanced-to-balanced converter circuit 110 is not particularly limited. Furthermore, the capacitor C11 is not a necessary structural element for impedance matching.

[0140] The circuit structure of differential amplifier circuit 100B is the same as that of differential amplifier circuit 100A. In differential amplifier circuit 100B, the power amplifiers 11F and 11G, and the output matching circuit 13F of differential amplifier circuit 100B correspond to the power amplifiers 11C and 11D, and the output matching circuit 13C of differential amplifier circuit 100A, respectively. Differential amplifier circuit 100A is located between signal input terminal 82A and the common terminal 50 of the second switch 5. Differential amplifier circuit 100B is located between signal input terminal 82B and the selection terminal 71 of the fourth switch 7.

[0141] Below, refer to Figure 10 (A) Figure 10 (B) Figure 11 as well as Figure 12 This will illustrate the structure of the high-frequency module 1e.

[0142] In differential amplifier circuit 100A, the first power amplifier 11C and the second power amplifier 11D are of the same type and have the same chip size. In differential amplifier circuit 100B (refer to...) Figure 13In the first power amplifier 11F and the second power amplifier 11G, they are of the same design and have the same chip size.

[0143] The first power amplifier 11C and the second power amplifier 11D of the differential amplifier circuit 100A are disposed on the first main surface 91 of the first wiring substrate 9. In addition, the first power amplifier 11F and the second power amplifier 11G of the differential amplifier circuit 100B are disposed on the first main surface 91 of the first wiring substrate 9.

[0144] In the differential amplifier circuit 100A, the inductor L11A closest to the output pad electrode 112C of the first power amplifier 11C among the plurality of inductor sections L11A, L11B, L12, and L13 is a wiring inductor 95A. Additionally, in the differential amplifier circuit 100A, the inductor L11B closest to the output pad electrode 112D of the second power amplifier 11D among the plurality of inductor sections L11A, L11B, L12, and L13 is a wiring inductor.

[0145] In the differential amplifier circuit 100A, multiple capacitors C11, C12, and C13 are surface-mount electronic components disposed on the first main surface 91 of the first wiring substrate 9.

[0146] In the differential amplifier circuit 100A, such as Figure 10 (A) Figure 10 (B) and Figure 12 As shown, the second inductor section L12 constituting the primary coil of transformer T1 is an inner layer inductor section provided in the first wiring board 9.

[0147] In the differential amplifier circuit 100A, such as Figure 10 (A) Figure 10 (B) and Figure 11 As shown, the third inductor portion L13 constituting the secondary winding of transformer T1 is a wiring inductor disposed on the first main surface 91 of the first wiring substrate 9. In transformer T1, when viewed from the thickness direction D1 of the first wiring substrate 9, a portion of the third inductor portion L13 overlaps with a portion of the second inductor portion L12, thereby magnetically coupling the primary winding and the secondary winding. A portion of the first wiring substrate 9 exists between the third inductor portion L13 and the second inductor portion L12 along the thickness direction D1 of the first wiring substrate 9. Alternatively, in transformer T1, when viewed from the thickness direction D1 of the first wiring substrate 9, the entire third inductor portion L13 overlaps with the entire second inductor portion L12.

[0148] As described above, the circuit structure of the differential amplifier circuit 100B is the same as that of the differential amplifier circuit 100A. The arrangement of each circuit element in the differential amplifier circuit 100B is the same as that in the differential amplifier circuit 100A.

[0149] The high-frequency module 1e according to Embodiment 2 includes a first wiring substrate 9, a second wiring substrate 10, a power amplifier 11C, an output matching circuit 13C, and an external connection terminal 80. The first wiring substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The second wiring substrate 10 has a third main surface 101 and a fourth main surface 102 facing each other. The second wiring substrate 10 is separated from the first wiring substrate 9 in the thickness direction D1. The power amplifier 11C has an output pad electrode 112C. The output matching circuit 13C includes multiple inductor sections L11A, L11B, L12, and L13, and the output matching circuit 13C is connected to the output pad electrode 112C of the power amplifier 11C. In the high-frequency module 1e, the second main surface 92 of the first wiring substrate 9 faces the third main surface 101 of the second wiring substrate 10. The external connection terminal 80 is disposed on the fourth main surface 102 of the second wiring substrate 10. The power amplifier 11C is disposed on the first main surface 91 of the first wiring substrate 9. In the output matching circuit 13C, the first inductor L11A, which is the inductor closest to the output pad electrode 112C among the plurality of inductor sections L11A, L11B, L12, and L13, is disposed on the first main surface 91 of the first wiring substrate 9.

[0150] The high-frequency module 1e according to Embodiment 2 can improve the Q value of the inductor section L11A included in the output matching circuit 13C connected to the power amplifier 11C. Here, in the high-frequency module 1e according to Embodiment 2, the inductor section L11A is disposed on the first main surface 91 of the first wiring substrate 9. As a result, the parasitic capacitance generated between the inductor section L11A and the ground of the circuit board 320 can be reduced, and the Q value of the inductor section L11A can be improved.

[0151] Furthermore, the high-frequency module 1e according to Embodiment 2 also includes a second power amplifier 11D and an unbalanced-to-balanced conversion circuit 110. The second power amplifier 11D is a power amplifier different from the first power amplifier 11C. The second power amplifier 11D has an output pad electrode 112D. The unbalanced-to-balanced conversion circuit 110 has an unbalanced terminal, a first balanced terminal, and a second balanced terminal. The second power amplifier 11D is disposed on the first main surface 91 of the first wiring substrate 9. The first balanced terminal of the unbalanced-to-balanced conversion circuit 110 is connected to the first power amplifier 11C, and the second balanced terminal is connected to the second power amplifier 11D. The first inductor section L11A is connected to the output pad electrode 112C of the first power amplifier 11C. The plurality of inductor sections L11A, L11B, L12, and L13 include other first inductor sections L11B that are different from the first inductor section L11A. The other first inductor sections L11B are connected to the output pad electrode 112D of the second power amplifier 11D. At least a portion of the other first inductor sections L11B are disposed on the first main surface 91 of the first wiring substrate 9. The output matching circuit 13C includes a transformer T1 with a second inductor section L12 (excluding the first inductor section L11A and the other first inductor sections L11B) as the primary winding and a third inductor section L13 as the secondary winding. The high-frequency module 1e has a differential amplifier circuit 100A including a first power amplifier 11C, a second power amplifier 11D, and the transformer T1. Thus, in the high-frequency module 1e according to Embodiment 2, the decrease in power gain can be suppressed.

[0152] The above-described embodiments 1 and 2 are merely one of the various embodiments of the present invention. As long as the objectives of the present invention are achieved, the above-described embodiments can be modified in various ways according to design, etc.

[0153] In the high-frequency modules 1, 1a to 1e, a first filter (low-pass filter) may be provided instead of the in-direction duplexer 3, or a multiplexer (e.g., a triplexer) may be provided. The multiplexer may include at least two of the following: a low-pass filter, a band-pass filter, and a high-pass filter.

[0154] Furthermore, in high-frequency modules 1, 1a to 1e, a duplexer can also be constructed from the transmitting filter 12A and the receiving filter 22A. Additionally, in high-frequency module 1, a duplexer can also be constructed from the transmitting filter 12B and the receiving filter 22B.

[0155] The number of selection terminals for each of the first switch 4, the second switch 5, the third switch 6, and the fourth switch 7 can be multiple, and is not limited to the number shown in the example.

[0156] Regarding the switches in the first switch 4 and the second switch 5, instead of being controlled by the controller, they can be controlled, for example, by control signals from the RF signal processing circuit 302 of the signal processing circuit 301.

[0157] In addition, elastic wave filters are not limited to elastic wave filters that utilize surface acoustic waves; for example, they can also be elastic wave filters that utilize elastic boundary waves, plate waves, etc.

[0158] Furthermore, in elastic wave filters, multiple series arm resonators and multiple parallel arm resonators are not limited to SAW resonators; for example, they can also be BAW (Bulk Acoustic Wave) resonators.

[0159] In high-frequency modules 1, 1a, 1b, 1c, and 1e, the front end of each of the multiple external connection terminals 80 may also include, for example, a gold-plated layer.

[0160] Alternatively, the communication device 300 according to Embodiment 1 may also include any one of the high-frequency modules 1a, 1b, 1c, and 1d to replace the high-frequency module 1.

[0161] (Way)

[0162] The following methods are disclosed in this specification.

[0163] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) involved in the first embodiment includes a first wiring substrate (9), a second wiring substrate (10), a power amplifier (11A; 11C), an output matching circuit (13A; 13C), and external connection terminals (80). The first wiring substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The second wiring substrate (10) has a third main surface (101) and a fourth main surface (102) facing each other. The second wiring substrate (10) is separated from the first wiring substrate (9) in the thickness direction (D1). The power amplifier (11A; 11C) has output pad electrodes (112A; 112C). The output matching circuit (13A; 13C) includes multiple inductor sections (L1, L2; L11A, L11B, L12, L13), and the output of the output matching circuit (13A; 13C) is connected to the output of the power amplifier (11A; 11C) via pad electrodes (112A; 112C). In the high-frequency module (1; 1a; 1b; 1c; 1d; 1e), the second main surface (92) of the first wiring substrate (9) is opposite to the third main surface (101) of the second wiring substrate (10). An external connection terminal (80) is disposed on the fourth main surface (102) of the second wiring substrate (10). The power amplifier (11A; 11C) is disposed on the first main surface (91) of the first wiring substrate (9). In the output matching circuit (13A; 13C), at least a portion of the first inductor portion (L1; L11A), which is the closest to the output pad electrode (112A; 112C) among the plurality of inductor portions (L1, L2; L11A, L11B, L12, L13), is disposed on the first main surface (91) of the first wiring substrate (9).

[0164] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) involved in the first method can improve the Q value of the inductor section (L1; L11A) included in the output matching circuit (13A; 13C) connected to the power amplifier (11A; 11C).

[0165] In the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the second aspect of the first aspect, all of the first inductor section (L1; L11A) is disposed on the first main surface (91) of the first wiring substrate (9).

[0166] Regarding the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) involved in the second method, compared with the case where only a portion of the first inductor section (L1; L11A) is disposed on the first main surface (91) of the first wiring substrate (9), the Q value of the inductor section (L1; L11A) can be improved.

[0167] In the high-frequency module (1; 1e) according to the third method of the first or second method, the first inductor section (inductor section L1; inductor section L11A) is a wiring inductor (95; 95A).

[0168] In the high-frequency module (1; 1e) involved in the third approach, height reduction can be achieved.

[0169] In the high-frequency module (1a) according to the fourth method of the first or second method, the first inductor section (inductor section L1) is a chip inductor (15).

[0170] In the high-frequency module (1a) involved in the fourth method, the Q value of the first inductor section (inductor section L1) can be improved.

[0171] The high-frequency module (1e) according to the fifth embodiment of the first or second embodiment further includes a second power amplifier (11D) and an unbalanced-to-balanced conversion circuit (110). The second power amplifier (11D) is a power amplifier different from the first power amplifier (11C). The second power amplifier (11D) has an output pad electrode (112D). The unbalanced-to-balanced conversion circuit (110) has an unbalanced terminal, a first balanced terminal, and a second balanced terminal. The second power amplifier (11D) is disposed on the first main surface (91) of the first wiring substrate (9). The first balanced terminal of the unbalanced-to-balanced conversion circuit (110) is connected to the first power amplifier, and the second balanced terminal is connected to the second power amplifier (11D). The first inductor section (L11A) is connected to the output pad electrode (112C) of the first power amplifier. The plurality of inductor sections (L11A, L11B, L12, L13) include other first inductor sections (L11B) that are different from the first inductor section (L11A). The output of the other first inductor section (L11B) is connected to the output of the second power amplifier (11D) via a pad electrode (112D). At least a portion of the other first inductor section (L11B) is disposed on the first main surface (91) of the first wiring substrate (9). The output matching circuit (13C) includes a transformer (T1) with a second inductor section (L12) other than the first inductor section (L11A) and the other first inductor sections (L11B) as the primary winding and a third inductor section (L13) as the secondary winding. The high-frequency module (1e) has a differential amplifier circuit (100A) including the first power amplifier, the second power amplifier (11D), and the transformer (T1).

[0172] The high-frequency module (1e) involved in the fifth method can suppress the decrease in power gain.

[0173] In the high-frequency module (1e) according to the sixth method of the fifth method, the second inductor section (inductor section L12) is an inner inductor section provided in the first wiring substrate (9).

[0174] In the high-frequency module (1e) involved in the sixth method, it is possible to achieve miniaturization of the size when viewed from the thickness direction (D1) of the first wiring substrate (9).

[0175] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the seventh embodiment of any one of the first to sixth embodiments further includes a through electrode (94). When viewed from the thickness direction (D1) of the first wiring substrate (9), the through electrode (94) overlaps with the power amplifier (11A; 11C). The through electrode (94) is connected to the power amplifier (11A; 11C) and penetrates the first wiring substrate (9) and the second wiring substrate (10).

[0176] Regarding the high-frequency modules (1; 1a; 1b; 1c; 1d; 1e) involved in the seventh method, the heat generated in the power amplifier (11A; 11C) is dissipated through the through electrode (94), thus improving heat dissipation.

[0177] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the eighth method of any of the first to seventh methods also includes a low-noise amplifier (21A, 21B) disposed on the second wiring board (10).

[0178] The high-frequency modules (1; 1a; 1b; 1c; 1d; 1e) involved in the eighth method can amplify the received signal through low-noise amplifiers (21A, 21B) and improve the isolation between the power amplifier (11A; 11C) and the low-noise amplifiers (21A, 21B).

[0179] In the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the ninth aspect of the eighth aspect, a low-noise amplifier (21A, 21B) is disposed on the fourth main surface (102) of the second wiring board (10).

[0180] The high-frequency modules (1; 1a; 1b; 1c; 1d; 1e) involved in the ninth method can improve the isolation between the power amplifier (11A; 11C) and the low-noise amplifier (21A, 21B).

[0181] In the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the eighth or ninth method, when viewed from the thickness direction (D1) of the first wiring substrate (9), the power amplifier (11A; 11C) and the low-noise amplifier (21A, 21B) do not overlap.

[0182] The high-frequency modules (1; 1a; 1b; 1c; 1d; 1e) involved in the tenth method can improve the isolation between the power amplifier (11A; 11C) and the low-noise amplifier (21A, 21B).

[0183] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the eleventh method of any of the eighth to tenth methods further includes a receiving filter (22A, 22B) and an input matching circuit (23A, 23B). The input matching circuit (23A, 23B) is disposed between the receiving filter (22A, 22B) and the low-noise amplifier (21A, 21B).

[0184] In the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the eleventh embodiment, the receiving filter (22A, 22B) and the input matching circuit (23A, 23B) are disposed on the third main surface (101) of the second wiring substrate (10).

[0185] The high-frequency modules (1; 1a; 1b; 1c; 1d; 1e) involved in the twelfth method can improve the isolation between the power amplifier (11A; 11C) and the receiving filters (22A, 22B) and the input matching circuits (23A, 23B).

[0186] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the eleventh, twelfth, or thirteenth embodiments also includes a transmitting filter (12A). The transmitting filter (12A) is connected to the power amplifier (11A; 11C) at least via an output matching circuit (13A; 13C). When viewed from the thickness direction (D1) of the first wiring substrate (9), the transmitting path (Tx11) including the power amplifier (11A; 11C), the output matching circuit (13A; 13C), and the transmitting filter (12A) does not overlap with the receiving path (Rx11) including the receiving filter (22A), the input matching circuit (23A), and the low-noise amplifier (21A).

[0187] The high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to the fourteenth embodiment of the thirteenth embodiment has multiple external connection terminals (80). The multiple external connection terminals (80) include a ground terminal (85) connected to the output matching circuit (13A; 13C).

[0188] The high-frequency module involved in the fourteenth method can improve the isolation between the transmit path (Tx11) including the power amplifier (11A) and the receive path (Rx11) including the low-noise amplifier (21A).

[0189] The communication device (300; 300e) involved in the fifteenth method includes a signal processing circuit (301) and a high-frequency module (1; 1a; 1b; 1c; 1d; 1e) according to any one of the first to fourteenth methods. The power amplifier (11A; 11C) of the high-frequency module (1; 1a; 1b; 1c; 1d; 1e) amplifies the transmitted signal from the signal processing circuit (301) and outputs it.

[0190] The communication device (300; 300e) involved in the fifteenth method can improve the Q value of the inductor section included in the output matching circuit (13A; 13C) connected to the power amplifier (11A; 11C).

[0191] Explanation of reference numerals in the attached figures

[0192] 1, 1a, 1b, 1c, 1d, 1e: High-frequency module; 3: Duplexer; 30: First filter; 31: Second filter; 4: Switch (first switch); 40: Common terminal; 41-43: Selection terminals; 5: Switch (second switch); 50: Common terminal; 51, 52: Selection terminals; 6: Switch (third switch); 60: Common terminal; 61, 62: Selection terminals; 7: Switch (fourth switch); 70: Common terminal; 71, 72: Selection terminals; 9: First wiring board; 91: First main surface; 92: Second main surface; 94: Through electrode; 941: Conductor 942: Conductor section; 943: Conductor section; 10: Second wiring substrate; 101: Third main surface; 102: Fourth main surface; 11A, 11B: Power amplifier; 11C: Power amplifier (first power amplifier); 11D: Power amplifier (second power amplifier); 11F: Power amplifier; 11G: Power amplifier; 12A, 12B: Transmitting filter; 13A, 13B: Output matching circuit; 13C, 13F: Output matching circuit; 14A, 14B, 14C: Matching circuit; 15: Chip inductor; 16: First resin layer; 17: Second resin layer Layer; 18: Third resin layer; 19: Shielding layer; 21A, 21B: Low noise amplifier; 22A, 22B: Receiver filter; 32C: Transmitter / receiver filter; 80: External connection terminal; 81: Antenna terminal; 82A, 82B: Signal input terminal; 83A, 83B: Signal output terminal; 85: Ground terminal; 86: Heat dissipation terminal; 100A, 100B: Differential amplifier circuit; 110: Unbalanced-to-balanced converter circuit; 300: Communication device; 301: Signal processing circuit; 302: RF signal processing circuit; 303: Baseband signal processing circuit; 310 : Antenna; 320: Circuit board; C1, C2, C11, C12, C13: Capacitors; D1: Thickness direction; D2: Thickness direction; L1: Inductor section (first inductor section); L2: Inductor section; L11A, L11B: Inductor section (first inductor section); L12: Inductor section (second inductor section); L13: Inductor section (third inductor section); PS1: Power supply wiring; PS2: Power supply wiring; T1: Transformer; Tx11, Tx12: Transmit path; Rx11, Rx12: Receive path; Vcc1: Bias voltage; Vcc2: Bias voltage.

Claims

1. A high-frequency module, comprising: The first wiring substrate has a first main surface and a second main surface facing each other; The second wiring substrate has a third main surface and a fourth main surface facing each other, and the second wiring substrate is separated from the first wiring substrate in the thickness direction of the first wiring substrate. A power amplifier having output pad electrodes; An output matching circuit, comprising a plurality of inductor sections, is connected to the output pad electrodes of the power amplifier; and External connection terminals, Wherein, the second main surface of the first wiring substrate is opposite to the third main surface of the second wiring substrate. The external connection terminal is disposed on the fourth main surface of the second wiring substrate. The power amplifier is disposed on the first main surface of the first wiring substrate. In the output matching circuit, at least a portion of the first inductor section, which is the inductor section closest to the output pad electrode among the plurality of inductor sections, is disposed on the first main surface of the first wiring substrate.

2. The high-frequency module according to claim 1, wherein, The entire first inductor section is disposed on the first main surface of the first wiring substrate.

3. The high-frequency module according to claim 1 or 2, wherein, The first inductor section is a wiring inductor.

4. The high-frequency module according to claim 1 or 2, wherein, The first inductor section is a surface-mount inductor.

5. The high-frequency module according to claim 1 or 2, further comprising: A second power amplifier, which differs from the first power amplifier, has output pad electrodes; and An unbalanced to balanced converter circuit has an unbalanced terminal, a first balanced terminal, and a second balanced terminal. wherein The second power amplifier is disposed on the first main surface of the first wiring substrate. The first balanced terminal of the unbalanced-to-balanced converter circuit is connected to the first power amplifier, and the second balanced terminal is connected to the second power amplifier. The first inductor section is connected to the output pad electrode of the first power amplifier. The plurality of inductor sections includes other first inductor sections that are different from the first inductor sections. These other first inductor sections are connected to the output pad electrodes of the second power amplifier. At least a portion of these other first inductor sections is disposed on the first main surface of the first wiring substrate. The output matching circuit includes a transformer with a second inductor (excluding the first inductor and the other first inductor sections) as the primary winding and a third inductor section as the secondary winding. The high-frequency module has a differential amplifier circuit including the first power amplifier, the second power amplifier, and the transformer.

6. The high-frequency module according to claim 5, wherein, The second inductor section is an inner layer inductor section disposed in the first wiring substrate.

7. The high-frequency module according to claim 1 or 2, wherein, It also has a through electrode that overlaps with the power amplifier when viewed from the thickness direction of the first wiring substrate. The through electrode is connected to the power amplifier and passes through the first wiring substrate and the second wiring substrate.

8. The high-frequency module according to claim 1, wherein, It also includes a low-noise amplifier configured on the second wiring substrate.

9. The high-frequency module according to claim 8, wherein, The low-noise amplifier is disposed on the fourth main surface of the second wiring substrate.

10. The high-frequency module according to claim 8 or 9, wherein, When viewed from the thickness direction of the first wiring substrate, the power amplifier and the low-noise amplifier do not overlap.

11. The high-frequency module according to claim 8 or 9, further comprising: Receiver filter; and An input matching circuit is disposed between the receiving filter and the low-noise amplifier.

12. The high-frequency module according to claim 11, wherein, The receiving filter and the input matching circuit are disposed on the third main surface of the second wiring substrate.

13. The high-frequency module according to claim 11, wherein, It also includes a transmitting filter, which is connected to the power amplifier at least via the output matching circuit. When viewed from the thickness direction of the first wiring substrate, the transmission path including the power amplifier, the output matching circuit, and the transmitting filter does not overlap with the receiving path including the receiving filter, the input matching circuit, and the low-noise amplifier.

14. The high-frequency module according to claim 13, wherein, Equipped with multiple external connection terminals, The plurality of external connection terminals include a ground terminal connected to the output matching circuit.

15. A communication device comprising: Signal processing circuit, whose output is a transmitted signal; and The high-frequency module according to any one of claims 1 to 14, The power amplifier of the high-frequency module amplifies the transmitted signal from the signal processing circuit and outputs it.

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