A highly sensitive temperature sensor based on origami structure

Abstract

The invention discloses a high-sensitivity temperature sensor based on an origami structure, comprising a substrate, a honeycomb structure beam, a honeycomb structure beam anchoring area, a first V-shaped beam support beam, a second V-shaped beam support beam, a third V-shaped beam support beam, a fourth V-shaped beam support beam, a first V-shaped beam anchoring area, a second V-shaped beam anchoring area, a third V-shaped beam anchoring area, a fourth V-shaped beam anchoring area, a first V-shaped beam push rod, a second V-shaped beam push rod, an origami structure beam, a first folded film structure, a second folded film structure, a third folded film structure, a fourth folded film structure, an origami structure beam anchoring area, a metal electrode and a planar inductor. The temperature sensor of the invention adopts the temperature-displacement-capacitance conversion principle, has high sensitivity, small detection error, and has the advantages of process compatibility, flexible design, simple structure, etc.

Description

Technical Field

[0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a high-sensitivity temperature sensor based on an origami structure. Background Art

[0002] Temperature sensors are the earliest developed and most widely used sensors. They convert temperature changes into electrical quantity changes. They are of various types and widely used. Temperature sensors can be divided into four categories according to their principles, namely resistance type, thermistor type, thermocouple type and micro temperature sensor. Micro temperature sensor is a new type of temperature sensor prepared by MEMS technology. Compared with traditional sensors, it has the advantages of small size, light weight, small inherent heat capacity, etc., and has great advantages over traditional temperature sensors in measuring temperature. At the same time, micro temperature sensors are compatible with MEMS technology and can realize miniaturization and integrated design. Therefore, they have broad application prospects in meteorological detection, industrial control, security alarm and other fields. However, existing temperature sensors have problems such as high power consumption, low sensitivity and large measurement errors. Summary of the invention

[0003] The purpose of the present invention is to provide a high-sensitivity temperature sensor based on an origami structure to solve the technical problems of high power consumption, low sensitivity, large measurement error and inflexible design of existing temperature sensors.

[0004] In order to solve the above technical problems, the specific technical solutions of the present invention are as follows:

[0005] A high-sensitivity temperature sensor based on an origami structure, comprising a substrate, a honeycomb structure beam, a honeycomb structure beam anchoring area, a first V-shaped beam support beam, a second V-shaped beam support beam, a third V-shaped beam support beam, a fourth V-shaped beam support beam, a first V-shaped beam anchoring area, a second V-shaped beam anchoring area, a third V-shaped beam anchoring area, a fourth V-shaped beam anchoring area, a first V-shaped beam push rod, a second V-shaped beam push rod, an origami structure beam, a first folded film structure, a second folded film structure, a third folded film structure, a fourth folded film structure, an origami structure beam anchoring area, a metal electrode and a planar inductor;

[0006] The first V-shaped beam support, the second V-shaped beam support, the first V-shaped beam anchoring area, the second V-shaped beam anchoring area and the first V-shaped beam pushing rod constitute a first V-shaped beam; the third V-shaped beam support, the fourth V-shaped beam support, the third V-shaped beam anchoring area, the fourth V-shaped beam anchoring area and the second V-shaped beam pushing rod constitute a second V-shaped beam;

[0007] The honeycomb structure beam anchor area is placed on the substrate, the two ends of the honeycomb structure beam in the x-axis direction are respectively connected to the first V-shaped beam pushing rod and the second V-shaped beam pushing rod, one end of the honeycomb structure beam in the positive direction of the y-axis is connected to the honeycomb structure beam anchor area, the two ends of the first V-shaped beam support beam are respectively connected to the first V-shaped beam anchor area and the first V-shaped beam pushing rod, the two ends of the second V-shaped beam support beam are respectively connected to the second V-shaped beam anchor area and the first V-shaped beam pushing rod, the two ends of the third V-shaped beam support beam are respectively connected to the third V-shaped beam anchor area and the second V-shaped beam pushing rod, the two ends of the fourth V-shaped beam support beam are respectively connected to the fourth V-shaped beam anchor area and the second V-shaped beam pushing rod, and the origami structure beam anchor area is placed Placed on a substrate, the two ends of the origami structure beam are respectively connected to one end of the honeycomb structure beam in the negative direction of the y-axis and the origami structure beam anchor area, the first folded film structure, the second folded film structure, the third folded film structure and the fourth folded film structure are symmetrically distributed on the origami structure beam, the first folded film structure and the second folded film structure are located on the upper surface of the origami structure beam, the third folded film structure and the fourth folded film structure are located on the lower surface of the origami structure beam, the metal electrode is located below the origami structure beam, and the two ends of the planar inductor are respectively connected to the metal electrode and the origami structure beam anchor area; the origami structure beam is suspended on the substrate; the metal electrode and the planar inductor are placed on the substrate.

[0008] Furthermore, the first folded membrane structure and the second folded membrane structure are symmetrical about the y-axis direction of the origami structure beam, the third folded membrane structure and the fourth folded membrane structure are symmetrical about the y-axis direction of the origami structure beam, the first folded membrane structure and the third folded membrane structure are located near the honeycomb structure beam, and the second folded membrane structure and the fourth folded membrane structure are located near the anchor area of ​​the origami structure beam.

[0009] Furthermore, the honeycomb structure beam is a centrally symmetrical diamond structure, and the honeycomb structure beam is suspended above the substrate.

[0010] Furthermore, the first V-shaped beam support and the second V-shaped beam support are symmetrical about the y-axis direction of the first V-shaped beam pushing rod, the first V-shaped beam anchor area and the second V-shaped beam anchor area are symmetrical about the y-axis direction of the first V-shaped beam pushing rod, the first V-shaped beam support, the second V-shaped beam support and the first V-shaped beam pushing rod are suspended on the substrate, and the first V-shaped beam anchor area and the second V-shaped beam anchor area are placed on the substrate.

[0011] Furthermore, the third V-shaped beam support and the fourth V-shaped beam support are symmetrical about the y-axis direction of the second V-shaped beam pushing rod, the third V-shaped beam anchor area and the fourth V-shaped beam anchor area are symmetrical about the y-axis direction of the second V-shaped beam pushing rod, the third V-shaped beam support, the fourth V-shaped beam support and the second V-shaped beam pushing rod are suspended above the substrate, and the third V-shaped beam anchor area and the fourth V-shaped beam anchor area are placed on the substrate.

[0012] Furthermore, the first V-shaped beam and the second V-shaped beam are symmetrical about the x-axis direction of the honeycomb structural beam.

[0013] Furthermore, the size of the metal electrode is 200*100 μm 2 .

[0014] A method for using a high-sensitivity temperature sensor based on an origami structure. When the ambient temperature rises, a first V-shaped beam support, a second V-shaped beam support, a third V-shaped beam support and a fourth V-shaped beam support expand due to the heat, and push the first V-shaped beam push rod and the second V-shaped beam push rod to achieve a small displacement movement, squeeze the honeycomb structure beam, and achieve displacement amplification in the y direction through the honeycomb structure beam; the large displacement of the honeycomb structure beam in the y direction squeezes the origami structure beam, so that the first folded film structure, the second folded film structure, the third folded film structure and the fourth folded film structure on the origami structure beam are folded, causing the origami structure beam to bend downward, the distance from the metal electrode is reduced, the capacitance between the origami structure beam and the metal electrode is increased, so that the resonant frequency of the LC resonant circuit composed of the capacitor and the planar inductor changes, and the LC resonant frequency is measured to detect the ambient temperature.

[0015] The high-sensitivity temperature sensor based on origami structure of the present invention has the following advantages: the high-sensitivity temperature sensor based on origami structure of the present invention combines displacement amplification structure and origami structure on the basis of MEMS technology, realizes the conversion of temperature change into large displacement change through V-shaped beam and honeycomb structure beam, and then uses origami structure to realize the conversion from plane structure to three-dimensional structure, realizes the change of resonant frequency of LC resonant circuit, and has the advantage of easy measurement. At the same time, the temperature sensor based on origami structure also has the advantages of simple structure, high reliability, high sensitivity, process compatibility, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A top view of the high-sensitivity temperature sensor based on an origami structure of the present invention;

[0017] Figure 2 AA′ cross-sectional view of the high-sensitivity temperature sensor based on origami structure of the present invention;

[0018] Figure 3 It is a BB′ cross-sectional view of the high-sensitivity temperature sensor based on the origami structure of the present invention;

[0019] Markings in the figure are as follows: 1. substrate; 21. honeycomb structural beam; 22. honeycomb structural beam anchoring area; 311. first V-shaped beam supporting beam; 312. second V-shaped beam supporting beam; 313. third V-shaped beam supporting beam; 314. fourth V-shaped beam supporting beam; 321. first V-shaped beam anchoring area; 322. second V-shaped beam anchoring area; 323. third V-shaped beam anchoring area; 324. fourth V-shaped beam anchoring area; 331. first V-shaped beam pushing rod; 332. second V-shaped beam pushing rod; 41. origami structural beam; 421. first folded film structure; 422. second folded film structure; 423. third folded film structure; 424. fourth folded film structure; 43. origami structural beam anchoring area; 5. metal electrode; 6. planar inductor. DETAILED DESCRIPTION

[0020] In order to better understand the purpose, structure and function of the present invention, the following is a further detailed description of a high-sensitivity temperature sensor based on an origami structure of the present invention in conjunction with the accompanying drawings.

[0021] See also Figure 1 , Figure 2 and Figure 3The present invention provides a high-sensitivity temperature sensor based on an origami structure, which includes a substrate 1, a honeycomb structure beam 21, a honeycomb structure beam anchor area 22, a first V-shaped beam support beam 311, a second V-shaped beam support beam 312, a third V-shaped beam support beam 313, and a fourth V-shaped beam support beam 314, a first V-shaped beam anchor area 321, a second V-shaped beam anchor area 322, a third V-shaped beam anchor area 323, and a fourth V-shaped beam anchor area 324, a first V-shaped beam push rod 331, a second V-shaped beam push rod 332, an origami structure beam 41, a first folded film structure 421, a second folded film structure 422, a third folded film structure 423, and a fourth folded film structure 424, an origami structure beam anchor area 43, a metal electrode 5 and a planar inductor 6.The honeycomb structure beam 21 is a centrally symmetrical diamond structure. The honeycomb structure beam 21 is suspended on the substrate 1. The honeycomb structure beam anchor area 22 is placed on the substrate 1. The two ends of the honeycomb structure beam 21 in the x-axis direction are respectively connected to the first V-shaped beam pushing rod 331 and the second V-shaped beam pushing rod 332. One end of the honeycomb structure beam 21 in the positive direction of the y-axis is connected to the honeycomb structure beam anchor area 22. The first V-shaped beam support beam 311, the second V-shaped beam support beam 312, the first V-shaped beam anchor area 321, the second V-shaped beam anchor area 322 and the first V-shaped beam pushing rod 331 form a first V-shaped beam. The first V-shaped beam support beam 311 and the second V-shaped beam support beam 312 are symmetrical about the y-axis direction of the first V-shaped beam pushing rod 331. The first V-shaped beam anchor area 321 and the second V-shaped beam anchor area 322 The second V-beam anchoring area 322 is symmetrical about the y-axis direction of the first V-beam pushing rod 331, the first V-beam supporting beam 311, the second V-beam supporting beam 312 and the first V-beam pushing rod 331 are suspended on the substrate 1, the first V-beam anchoring area 321 and the second V-beam anchoring area 322 are placed on the substrate 1, the two ends of the first V-beam supporting beam 311 are respectively connected to the first V-beam anchoring area 321 and the first V-beam pushing rod 331, the two ends of the second V-beam supporting beam 312 are respectively connected to the second V-beam anchoring area 322 and the first V-beam pushing rod 331, the third V-beam supporting beam 313, the fourth V-beam supporting beam 314, the third V-beam anchoring area 323, the fourth V-beam anchoring area 324 and the second V-beam pushing rod 332 form a second V-beam, The third V-beam support beam 313 and the fourth V-beam support beam 314 are symmetrical about the y-axis direction of the second V-beam pushing rod 332, the third V-beam anchoring area 323 and the fourth V-beam anchoring area 324 are symmetrical about the y-axis direction of the second V-beam pushing rod 332, the third V-beam support beam 313, the fourth V-beam support beam 314 and the second V-beam pushing rod 332 are suspended above the substrate 1, the third V-beam anchoring area 323 and the fourth V-beam anchoring area 324 are placed on the substrate 1, the two ends of the third V-beam support beam 313 are respectively connected to the third V-beam anchoring area 323 and the second V-beam pushing rod 332, the two ends of the fourth V-beam support beam 314 are respectively connected to the fourth V-beam anchoring area 324 and the second V-beam pushing rod 332, the first V-beam and the second V The origami structure beam is symmetrical about the x-axis direction of the honeycomb structure beam 21, the origami structure beam 41 is suspended on the substrate 1, the origami structure beam anchor area 43 is placed on the substrate 1, the two ends of the origami structure beam 41 are respectively connected to one end of the honeycomb structure beam 21 in the negative direction of the y-axis and the fixed metal anchor area 5, the first folded film structure 421, the second folded film structure 422, the third folded film structure 423 and the fourth folded film structure 424 are symmetrically distributed on the origami structure beam 41, the first folded film structure 421 and the second folded film structure 422 are located on the upper surface of the origami structure beam 41, the third folded film structure 423 and the fourth folded film structure 424 are located on the lower surface of the origami structure beam 41, and the size of the metal electrode 5 is 200*100μm.2 The metal electrode 5 is placed on the substrate 1, the metal electrode 5 is located below the origami structure beam 41, the planar inductor 6 is placed on the substrate 1, and the two ends of the planar inductor 6 are respectively connected to the metal electrode 5 and the origami structure beam anchor area 43.

[0022] The method of using the temperature sensor is as follows: when the ambient temperature rises, the first V-shaped beam support beam 311, the second V-shaped beam support beam 312, the third V-shaped beam support beam 313 and the fourth V-shaped beam support beam 314 expand due to heat, push the first V-shaped beam push rod 331 and the second V-shaped beam push rod 332 to achieve a small displacement movement, squeeze the honeycomb structure beam 21, and realize the displacement amplification in the y direction through the honeycomb structure beam 21. The large displacement of the honeycomb structure beam 21 in the y direction squeezes the origami structure beam 41, so that the first folded film structure 421, the second folded film structure 422, the third folded film structure 423 and the fourth folded film structure 424 on the origami structure beam 41 are folded, causing the origami structure beam 41 to bend downward, the distance from the metal electrode 5 is reduced, and the capacitance between the origami structure beam 41 and the metal electrode 5 is increased, so that the resonant frequency of the LC resonant circuit composed of the capacitor and the planar inductor 6 changes, and the LC resonant frequency is measured to detect the ambient temperature. Therefore, the temperature sensor has the advantages of high sensitivity, small detection error, process compatibility, and novel structure.

[0023] The temperature sensor can realize displacement amplification drive by controlling the V-shaped beam and the honeycomb structure beam, and then use the origami structure beam to transform the plane structure into a three-dimensional structure to complete the temperature-displacement-capacitance form conversion. Therefore, it has the advantages of high sensitivity and small detection error.

[0024] A high-sensitivity temperature sensor based on an origami structure in the present invention is different from other temperature sensors and has the following main features: 1. A V-shaped beam and a honeycomb structure beam form a displacement amplification driving structure to achieve a large range of displacement amplification and reduce detection errors; 2. The origami structure beam realizes the transformation from a planar structure to a three-dimensional structure, increases the capacitance change between the metal electrode and improves sensitivity; 3. The production of the temperature sensor does not require special materials and is compatible with traditional MEMS manufacturing technology, and can meet the application requirements of high reliability and miniaturization.

[0025] The criteria for distinguishing whether it is this structure are as follows:

[0026] (a) The displacement amplification drive structure is composed of a V-shaped beam and a honeycomb structure beam.

[0027] (b) Using origami structural beams to achieve the transformation from a plane structure to a three-dimensional structure.

[0028] (c) The capacitor composed of the origami structure beam and metal electrode and the planar inductor form an LC resonant circuit.

[0029] The structure that meets the above three conditions should be regarded as the high-sensitivity temperature sensor based on origami structure.

[0030] It is to be understood that the present invention is described by some embodiments, and it is known to those skilled in the art that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the teachings of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the scope of protection of the present invention.

Claims

1. A high-sensitivity temperature sensor based on an origami structure, characterized in that: The invention comprises a substrate (1), a honeycomb structure beam (21), a honeycomb structure beam anchoring area (22), a first V-shaped beam support beam (311), a second V-shaped beam support beam (312), a third V-shaped beam support beam (313), a fourth V-shaped beam support beam (314), a first V-shaped beam anchoring area (321), a second V-shaped beam anchoring area (322), a third V-shaped beam anchoring area (323), a fourth V-shaped beam anchoring area (324), a first V-shaped beam pushing rod (331), a second V-shaped beam pushing rod (332), an origami structure beam (41), a first folded film structure (421), a second folded film structure (422), a third folded film structure (423), a fourth folded film structure (424), an origami structure beam anchoring area (43), a metal electrode (5) and a planar inductor (6); The first V-shaped beam support beam (311), the second V-shaped beam support beam (312), the first V-shaped beam anchoring area (321), the second V-shaped beam anchoring area (322) and the first V-shaped beam pushing rod (331) form a first V-shaped beam; the third V-shaped beam support beam (313), the fourth V-shaped beam support beam (314), the third V-shaped beam anchoring area (323), the fourth V-shaped beam anchoring area (324) and the second V-shaped beam pushing rod (332) form a second V-shaped beam; The honeycomb structure beam anchoring area (22) is placed on the substrate (1), the two ends of the honeycomb structure beam (21) in the x-axis direction are respectively connected to the first V-shaped beam pushing rod (331) and the second V-shaped beam pushing rod (332), one end of the honeycomb structure beam (21) in the y-axis positive direction is connected to the honeycomb structure beam anchoring area (22), the two ends of the first V-shaped beam support beam (311) are respectively connected to the first V-shaped beam anchoring area (321) and the first V-shaped beam pushing rod (331), and the second The two ends of the V-shaped beam support beam (312) are respectively connected to the second V-shaped beam anchoring area (322) and the first V-shaped beam pushing rod (331), the two ends of the third V-shaped beam support beam (313) are respectively connected to the third V-shaped beam anchoring area (323) and the second V-shaped beam pushing rod (332), the two ends of the fourth V-shaped beam support beam (314) are respectively connected to the fourth V-shaped beam anchoring area (324) and the second V-shaped beam pushing rod (332), and the origami structure beam anchoring area (43) is placed on the substrate. (1), the two ends of the origami structure beam (41) are respectively connected to one end of the honeycomb structure beam (21) in the negative direction of the y-axis and the origami structure beam anchor region (43); the first folded film structure (421), the second folded film structure (422), the third folded film structure (423) and the fourth folded film structure (424) are symmetrically distributed on the origami structure beam (41); the first folded film structure (421) and the second folded film structure (422) are located on the upper surface of the origami structure beam (41); the third folded film structure (423) and the fourth folded film structure (424) are located on the lower surface of the origami structure beam (41); the metal electrode (5) is located below the origami structure beam (41); the two ends of the planar inductor (6) are respectively connected to the metal electrode (5) and the origami structure beam anchor region (43); the origami structure beam (41) is suspended on the substrate (1); and the metal electrode (5) and the planar inductor (6) are placed on the substrate (1).

2. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The first folded film structure (421) and the second folded film structure (422) are symmetrical about the y-axis direction of the origami structure beam (41), and the third folded film structure (423) and the fourth folded film structure (424) are symmetrical about the y-axis direction of the origami structure beam (41). The first folded film structure (421) and the third folded film structure (423) are located near the honeycomb structure beam (21), and the second folded film structure (422) and the fourth folded film structure (424) are located near the origami structure beam anchor area (43).

3. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The honeycomb structure beam (21) is a centrally symmetrical diamond structure, and the honeycomb structure beam (21) is suspended on the substrate (1).

4. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The first V-shaped beam support (311) and the second V-shaped beam support (312) are symmetrical about the y-axis direction of the first V-shaped beam push rod (331); the first V-shaped beam anchoring area (321) and the second V-shaped beam anchoring area (322) are symmetrical about the y-axis direction of the first V-shaped beam push rod (331); the first V-shaped beam support (311), the second V-shaped beam support (312) and the first V-shaped beam push rod (331) are suspended on the substrate (1); and the first V-shaped beam anchoring area (321) and the second V-shaped beam anchoring area (322) are placed on the substrate (1).

5. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The third V-shaped beam support (313) and the fourth V-shaped beam support (314) are symmetrical about the y-axis direction of the second V-shaped beam push rod (332), the third V-shaped beam anchoring area (323) and the fourth V-shaped beam anchoring area (324) are symmetrical about the y-axis direction of the second V-shaped beam push rod (332), the third V-shaped beam support (313), the fourth V-shaped beam support (314) and the second V-shaped beam push rod (332) are suspended on the substrate (1), and the third V-shaped beam anchoring area (323) and the fourth V-shaped beam anchoring area (324) are placed on the substrate (1).

6. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The first V-shaped beam and the second V-shaped beam are symmetrical with respect to the x-axis direction of the honeycomb structural beam (21).

7. The high-sensitivity temperature sensor based on origami structure according to claim 1, characterized in that: The size of the metal electrode (5) is 200*100 μm 2 .

8. A method for using the high-sensitivity temperature sensor based on origami structure as claimed in claim 1, characterized in that: When the ambient temperature rises, the first V-shaped beam support beam (311), the second V-shaped beam support beam (312), the third V-shaped beam support beam (313) and the fourth V-shaped beam support beam (314) expand due to the heat, and push the first V-shaped beam push rod (331) and the second V-shaped beam push rod (332) to achieve a small displacement movement, squeeze the honeycomb structure beam (21), and achieve displacement amplification in the y direction through the honeycomb structure beam (21); the large displacement of the honeycomb structure beam (21) in the y direction squeezes the origami structure beam (41), so that the origami The first folded film structure (421), the second folded film structure (422), the third folded film structure (423) and the fourth folded film structure (424) on the structural beam (41) are folded, causing the origami structural beam (41) to bend downward, thereby reducing the distance from the metal electrode (5), and increasing the capacitance between the origami structural beam (41) and the metal electrode (5), causing the resonance frequency of the LC resonance circuit composed of the capacitor and the planar inductor (6) to change. The LC resonance frequency is measured to detect the ambient temperature.

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