A chemical vapor deposition method

Abstract

The application provides a chemical vapor deposition method, relates to the technical field of semiconductors, and can solve the problem that the plasma effect of different processing chambers has different influences on a hard mask layer. A manufacturing method of a substrate comprises the following steps: placing a substrate into a processing chamber, and forming a hard mask layer on the substrate; introducing gas required for forming plasma into the processing chamber; turning on a power supply of the processing chamber to form a pre-plasma; continuously introducing a precursor and gas required for forming the plasma into the processing chamber to perform a chemical vapor deposition process, and forming a thin film on the hard mask layer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a chemical vapor deposition method. Background Technology

[0002] In semiconductor manufacturing, if a dielectric layer is formed using different equipment after the hard mask pattern has been created, the plasma effects of these different equipment may vary, thus affecting the pattern of the hard mask layer. Once the pattern of the hard mask layer is affected, the linewidth of the film layer manufactured using the hard mask layer will also be affected. Summary of the Invention

[0003] This invention provides a chemical vapor deposition method that can solve the problem that the plasma effect in different processing chambers has different effects on the hard mask layer.

[0004] To achieve the above objectives, the present invention provides a chemical vapor deposition method, comprising: placing a substrate in a processing chamber and forming a hard mask layer on the substrate; introducing a gas required for plasma formation into the processing chamber; turning on the power supply to the processing chamber to form a pre-plasma; continuing to introduce a precursor and a gas required for plasma formation into the processing chamber to perform a chemical vapor deposition process to form a thin film on the hard mask layer.

[0005] Optionally, the time for forming the pre-plasma is 0.1 to 5 seconds.

[0006] Optionally, power can be switched on to the processing chamber, including providing radio frequency power to the processing chamber.

[0007] Optional, the RF power is 10 to 3000W.

[0008] Optionally, the flow rate of the gas required to form plasma introduced into the processing chamber before power is turned on is 50% to 120% of the flow rate of the gas and precursor required to form plasma introduced into the processing chamber during the chemical vapor deposition process.

[0009] Optionally, the plasma gas includes at least one of O2, N2O, Ar, and He.

[0010] Optionally, the hard mask layer can be carbon or SOH.

[0011] Optionally, the precursor may include SiH4.

[0012] Optionally, the material of the thin film includes one of SiO2, SiN, SiON, SiCN, and SiOC.

[0013] The chemical vapor deposition method provided by this invention introduces a gas required for plasma formation into a processing chamber after the formation of a hard mask layer and before the formation of a thin film, and turns on the power to the processing chamber to form a pre-plasma. By adjusting the time of plasma gas introduction, the thickness of the hard mask layer being etched is controlled to neutralize the thickness of the hard mask layer etched by the subsequent plasma. In this way, even when fabricating thin films in different types of processing chambers, the plasma effect affecting the hard mask layer can be the same. Therefore, under the known influence of plasma effects, the critical dimension (CD bias) of the hard mask layer can be rationally designed in advance to avoid affecting the pattern of the hard mask layer, thereby affecting the linewidth of the film layer fabricated using the hard mask layer. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 A manufacturing timeline diagram of chemical vapor deposition provided in an embodiment of the present invention;

[0016] Figure 2 A chemical vapor deposition manufacturing process diagram provided for an embodiment of the present invention;

[0017] Figure 3 A chemical vapor deposition manufacturing process diagram provided for an embodiment of the present invention;

[0018] Figure 4 A chemical vapor deposition manufacturing process diagram provided for an embodiment of the present invention;

[0019] Figure 5 This is a manufacturing timing diagram of chemical vapor deposition provided for an embodiment of the present invention.

[0020] Figure label:

[0021] 10-Substrate; 11-Hard mask layer; 13-Thin film. Detailed Implementation

[0022] Embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0023] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0024] In the context of this disclosure, when a layer / element is referred to as being "above" another layer / element, the layer / element may be directly above the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "above" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0025] Since the gas required to form plasma is also introduced into the processing chamber when forming a thin film on the hard mask layer, as mentioned in the background art, a secondary plasma is formed at the same time as the thin film is formed. The plasma effect caused by the secondary plasma will affect the pattern of the hard mask layer. For example, if the hard mask layer includes vias, the plasma effect will increase the size of the vias.

[0026] To address the aforementioned technical issues, such as Figure 1 As shown in the figure, an embodiment of the present invention provides a chemical vapor deposition method, which will be described below through specific embodiments.

[0027] like Figure 2 As shown, a semiconductor substrate 10 is provided, placed in a processing chamber, and a hard mask layer 11 is formed on the substrate 10. The semiconductor substrate 10 can be a germanium substrate, a bulk silicon substrate, a silicon-on-insulator (SOI) substrate, a III-V compound semiconductor substrate, a germanium-on-insulator (GOI) substrate, a silicon-germanium substrate, or an epitaxial thin film substrate obtained by performing selective epitaxial growth (SEG). Semiconductor patterns, devices, and other structures may have been pre-formed on the semiconductor substrate 10. The hard mask layer 11 can be made of amorphous carbon and formed by a spin-coating process.

[0028] Here, the specific pattern of the hard mask layer 11 is not limited. The specific pattern of the hard mask layer 11 is related to the pattern of the film layer to be etched below the hard mask layer 11.

[0029] like Figure 3As shown, the processing chamber can be heated, and then the gas required to form plasma is introduced into the processing chamber. The gas required to form plasma includes at least one of oxygen (O2), nitrous oxide (N2O), argon (Ar), and helium (He).

[0030] like Figure 4 As shown, the power supply to the processing chamber is turned on to form a pre-plasma. Turning on the power supply to the processing chamber includes providing radio frequency power to the processing chamber, which can be 10 to 3000W.

[0031] The time for forming the pre-plasma can be controlled by controlling the time it takes for the gas required to form the plasma, thereby controlling the thickness of the hard mask layer 11 being etched. For example, the time for forming the pre-plasma can be 0.1 to 5 seconds.

[0032] For example, assuming that when a thin film is formed in processing chamber A, the plasma effect of the secondary plasma affects the etching amount of the hard mask layer 11 by... When the thin film is formed in processing chamber B, the plasma effect of the secondary plasma affects the etching amount of the hard mask layer 11. The plasma effect can be neutralized by controlling the time when the gas required for plasma formation is introduced into processing chamber A and processing chamber B during the formation of pre-plasma, so that the plasma effect in equipment A and equipment B has the same etching amount on hard mask layer 11.

[0033] For example, the time required for the gas to form plasma when introduced into processing chamber A is 5 seconds, and the time required for the gas to form plasma when introduced into processing chamber B is 3 seconds.

[0034] like Figure 5 As shown, the precursor and the gas required to form plasma are continuously introduced into the processing chamber to perform a chemical vapor deposition process to form a thin film on the hard mask layer 11.

[0035] The gas introduced into the processing chamber during a chemical vapor deposition process to form plasma can be the same as the gas introduced into the processing chamber before the power is turned on to form plasma. Alternatively, the gas introduced into the processing chamber during a chemical vapor deposition process to form plasma can be different from the gas introduced into the processing chamber before the power is turned on to form plasma.

[0036] For example, the gas required to form plasma when the chemical vapor deposition process is introduced into the processing chamber is N2O, and the gas required to form plasma when the power is turned on is also N2O.

[0037] Alternatively, the gas required for plasma formation introduced into the processing chamber during chemical vapor deposition is N2O, and the gas required for plasma formation introduced into the processing chamber before power is turned on is He.

[0038] Here, the material of thin film 13 is not limited; the material of thin film 13 is related to its function. For example, thin film 13 can be used as a dielectric layer, then the material of thin film 13 can be an insulating material, and the material of the dielectric layer can be an organic insulating material or an inorganic insulating material.

[0039] If the dielectric layer is made of organic insulating material, then the dielectric layer material can be resin.

[0040] If the dielectric layer is made of inorganic insulating material, then the dielectric layer material can be silicon dioxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), SiCN, SiOC, etc.

[0041] If the thin film material is SiO2, SiN, SiON, SiOC, etc., the precursor introduced into the processing chamber can include SiH4. Taking SiN as an example, a silicon precursor and nitrogen gas can be introduced into the processing chamber.

[0042] The flow rate of the gas required to form plasma introduced into the processing chamber before the power is turned on is 50% to 120% of the flow rate of the gas and precursor required to form plasma introduced into the processing chamber during the chemical vapor deposition process.

[0043] Finally, nitrogen (N2) or other gases that are easy to extract from the processing chamber can be introduced into the processing chamber to replace the unreacted gases that are difficult to extract from the processing chamber; then, the processing chamber is evacuated to a vacuum state in order to carry out subsequent processes.

[0044] The chemical vapor deposition method provided in this invention involves introducing a gas required for plasma formation into a processing chamber after the formation of the hard mask layer 11 and before the formation of the thin film 13, and turning on the power to the processing chamber to form a pre-plasma. The thickness of the hard mask layer 11 etched is controlled by adjusting the duration of the plasma gas introduction, thus neutralizing the thickness of the hard mask layer 11 etched by the subsequent plasma etching. In this way, even when fabricating the thin film 13 in different types of processing chambers, the plasma effect affecting the hard mask layer 11 can be the same. Therefore, under known plasma effect conditions, the critical dimension (CD bias) of the hard mask layer 11 can be pre-designed rationally to avoid affecting the pattern of the hard mask layer 11, thereby affecting the linewidth of the film layer fabricated using the hard mask layer 11.

[0045] This invention also provides a substrate manufactured by the chemical vapor deposition method described in any of the foregoing embodiments.

[0046] The explanation of the substrate can be found in the aforementioned explanation of a chemical vapor deposition method, and will not be repeated here.

[0047] This invention also provides an electronic device comprising the substrate described in any of the foregoing embodiments. For example, the electronic device includes at least one of a smartphone, computer, tablet computer, wearable smart device, artificial intelligence device, and power bank.

[0048] The specific purpose of the electronic device is not limited, as long as the electronic device includes the aforementioned substrate.

[0049] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0050] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A chemical vapor deposition method, characterized in that, include: The substrate is placed in the processing chamber, and a hard mask layer is formed on the substrate; The gas required to form plasma is introduced into the processing chamber; Turn on the power in the processing chamber to form pre-plasma; By controlling the time it takes for the gas required to form plasma to be introduced, the time for the pre-plasma to be formed is controlled, thereby controlling the thickness of the hard mask layer being etched, in order to neutralize the thickness of the hard mask layer etched by the dimensional plasma. The precursor and the gas required to form the plasma are continuously introduced into the processing chamber to perform a chemical vapor deposition process to form a thin film on the hard mask layer. The flow rate of the gas required to form the plasma introduced into the processing chamber before the power is turned on is 50% to 120% of the flow rate of the gas and precursor required to form the plasma introduced into the processing chamber during the chemical vapor deposition process.

2. The chemical vapor deposition method according to claim 1, characterized in that, The time for the pre-plasma to form is 0.1~5s.

3. The chemical vapor deposition method according to claim 1 or 2, characterized in that, Turning on the power to the processing chamber includes: Radio frequency power is supplied to the processing chamber.

4. The chemical vapor deposition method according to claim 3, characterized in that, The radio frequency power is 10~3000W.

5. The chemical vapor deposition method according to claim 1 or 2, characterized in that, The gases required to form plasma include at least one of O2, N2O, Ar, and He.

6. The chemical vapor deposition method according to claim 1 or 2, characterized in that, The hard mask layer is carbon or SOH.

7. The chemical vapor deposition method according to claim 1 or 2, characterized in that, The precursor includes SiH4.

8. The chemical vapor deposition method according to claim 7, characterized in that, The material of the thin film includes one of SiO2, SiN, SiON, SiCN, and SiOC.

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