Carrier and semiconductor process equipment

Abstract

The present application discloses a carrier device and semiconductor process equipment, which relate to the field of semiconductor equipment. A carrier device comprises: a base body and a heating element distributed inside the base body; the base body has a first area close to its middle area and a second area surrounding the first area; the distribution density of the heating element in the first area is greater than the distribution density in the second area; the base body is provided with a first cavity in the first area, and along the axial direction of the base body, the first cavity is at least partially located between the heating element and the bearing surface of the base body, and the bearing surface is used to bear a wafer. A semiconductor process equipment comprises the above-mentioned carrier device. The present application can at least solve the problems such as the uneven temperature distribution of the current heating base.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor equipment, and specifically relates to a carrier device and semiconductor process equipment. Background Art

[0002] During the chemical vapor deposition process, the wafer is heated by a heating base. After being heated to a certain temperature, the reaction gas is introduced for chemical vapor deposition to generate a thin film. The reaction rate of chemical vapor deposition is directly related to the temperature of the wafer surface, that is, the reaction rate is high in the high temperature area and low in the low temperature area. The thickness uniformity of the film generated by the reaction is directly related to the temperature uniformity of the wafer surface. Therefore, the uniform temperature distribution of the heating base is crucial to improving the uniformity of the film.

[0003] At present, the heating base used in some chemical vapor deposition equipment includes a base and a heating element, and the heating element is embedded in the base to heat the base. However, due to the uneven distribution of the heating elements in different positions in the base, the temperature distribution of the base is uneven, which in turn leads to poor uniformity of the film generated on the wafer surface during the process, affecting the product yield. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a carrier device and semiconductor process equipment, which can at least solve the current problems such as uneven temperature distribution of the heating base.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] The embodiment of the present application provides a carrying device, which includes: a base body and a heating element distributed inside the base body;

[0007] The base body has a first area close to the middle area thereof and a second area surrounding the first area, and the distribution density of the heating elements in the first area is greater than that in the second area;

[0008] The base body is provided with a first cavity in the first region. Along the axial direction of the base body, the first cavity is at least partially located between the heating element and a bearing surface of the base body, and the bearing surface is used to bear a wafer.

[0009] An embodiment of the present application also provides a semiconductor process equipment, including the above-mentioned carrier device.

[0010] In the embodiment of the present application, the base body can be heated by the heating element. Since the density of the heating element in the first area is greater than the distribution density in the second area, the temperature of the first area is higher than the temperature of the second area. By setting the first cavity in the first area, a certain space can be formed between at least part of the heating element and the bearing surface, so that the heat transfer mode in the first cavity is changed, that is, the heat is directly transferred from the solid to the gas or the heat is transferred by thermal radiation, which can reduce the heat transfer efficiency here to a certain extent. Based on the above configuration, compared with the heating base without the first cavity, the bearing device in the embodiment of the present application can make the heat transfer mode in the first area different from the heat transfer mode in the second area by setting the first cavity in the first area, so as to reduce the heat transfer efficiency in the first area, so that the temperature of the first area approaches the temperature of the second area, and the temperature of the base body as a whole approaches to be equal, thereby improving the temperature uniformity of the bearing device, ensuring the uniformity of the thin film generated on the surface of the wafer during the process, and improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a first cross-sectional schematic diagram of the carrying device disclosed in the embodiment of the present application;

[0012] Figure 2 A second cross-sectional schematic diagram of the carrying device disclosed in the embodiment of the present application;

[0013] Figure 3 A cross-sectional schematic diagram of a base body disclosed in an embodiment of the present application;

[0014] Figure 4 This is a temperature distribution relationship diagram of the base body under the first pressure condition disclosed in the embodiment of the present application, wherein the center of the base body is taken as the origin, the parameter of the X-axis represents the coordinate of a certain point on the base body in the X direction, and the parameter of the Y-axis represents the coordinate of a certain point on the base body in the Y direction;

[0015] Figure 5 This is a temperature distribution relationship diagram of the base body under the second pressure condition disclosed in the embodiment of the present application, wherein the center of the base body is taken as the origin, the parameter of the X-axis represents the coordinate of a certain point on the base body in the X direction, and the parameter of the Y-axis represents the coordinate of a certain point on the base body in the Y direction;

[0016] Figure 6 This is a temperature distribution relationship diagram of the base body under the third pressure condition disclosed in the embodiment of the present application, wherein the center of the base body is taken as the origin, the parameters of the X-axis represent the coordinates of a certain point on the base body in the X direction, and the parameters of the Y-axis represent the coordinates of a certain point on the base body in the Y direction.

[0017] Description of reference numerals:

[0018] 100-base body; 110-bearing surface; 120-first cavity; 121-first wall surface; 122-second wall surface; 123-cavity unit; 130-second cavity;

[0019] 200-heating element;

[0020] 300-air supply component; 310-air supply pipeline; 311-main pipeline; 312-first branch; 313-second branch; 314-third branch; 320-pressure controller; 330-air pump;

[0021] 400-temperature controlled heating rod;

[0022] 500 - Support structure. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0025] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0026] refer to Figures 1 to 6 The embodiment of the present application discloses a carrier device, which can be applied to a process chamber of a chemical vapor deposition process equipment to carry and heat a wafer undergoing a chemical vapor deposition process. Of course, the carrier device can also be applied to other semiconductor process equipment, and the embodiment of the present application does not limit this.

[0027] The disclosed carrying device includes a base body 100 and a heating element 200. The base body 100 is used to carry the wafer, and the heating element 200 is used to heat the base body 100, and the carried wafer is heated by the base body 100 to meet the temperature requirements of the process. Optionally, the base body 100 can be disc-shaped, which is consistent with the shape of the wafer.

[0028] The base body 100 may have a carrying surface 110 for carrying a wafer, wherein the carrying surface 110 is perpendicular to the axis of the base body 100 and is located at the top of the base body 100 when the base body 100 is in use.

[0029] The base body 100 has a first area close to its middle area and a second area surrounding the first area. Optionally, a circle can be drawn with the center of the base body 100 as the center and r1 as the radius, and the area inside the circle is the area close to the middle, that is, the first area, and the area outside the circle is the second area. When the wafer is placed on the carrying surface 110, the center area and edge area of ​​the wafer are opposite to the first area and the second area respectively.

[0030] In order to fix the carried wafer, in some embodiments, the carrying surface 110 may be provided with a groove, and the pressure difference between the internal pressure of the process chamber and the pressure in the groove is controlled to ensure that the wafer does not move on the carrying surface 110 during the process.

[0031] In order to meet the temperature requirements of the wafer during the process, the heating element 200 can be distributed inside the base body 100, so that the base body 100 is heated by the heating element 200, and the heat is transferred to the wafer through the supporting surface 110 of the base body 100 to achieve heating of the wafer.

[0032] Optionally, the heating element 200 may include a heating wire or a heating sheet having a certain length. When arranged, the heating element 200 may be arranged around the axis of the base body 100 and inside the base body 100. Of course, other distribution methods are also possible, as long as the distribution area is large enough, so that the base body 100 has a large enough heating area.

[0033] In addition, there may be multiple heating elements 200 , and the multiple heating elements 200 are discretely distributed inside the base body 100 . In this case, the distribution density is the density of the discrete distribution of the multiple heating elements 200 .

[0034] When the heating element 200 is set, the distribution density of the heating element 200 in the first area is greater than the distribution density in the second area. Although this distribution method can increase the distribution area of ​​the heating element 200 in the base body 100, thereby expanding the heating area of ​​the base body 100, due to the large distribution density in the first area, the base body 100 absorbs relatively more heat in the first area, so that the temperature of the base body 100 in the first area is relatively high; and due to the small distribution density in the second area, the base body 100 absorbs relatively less heat in the second area, so that the temperature of the base body 100 in the second area is relatively low. In this way, there is a certain difference in temperature between different areas of the base body 100. In this case, heating the wafer will cause uneven temperature distribution on the wafer, thereby affecting the uniformity of the film generated on the wafer surface during the process, and further affecting the product yield.

[0035] Based on the above situation, in the embodiment of the present application, the base body 100 is provided with a first cavity 120 in the first region, and along the axial direction of the base body 100, the first cavity 120 is at least partially located between the heating element 200 and the bearing surface 110. By providing the first cavity 120, a certain space can be formed between the heating element 200 and the bearing surface 110, so that the heating element 200 and the base body 100 are not completely in close contact, thereby preventing the heat generated by the heating element 200 from being transferred to the bearing surface 110 at the first cavity 120, and to a certain extent, the temperature in the first region can be reduced. Optionally, the first cavity 120 can be a cubic space with a height of a, a length of b, and a width of c. Of course, it can also be in other forms. The embodiment of the present application does not limit the shape of the first cavity 120, as long as a certain space can be formed.

[0036] It should be noted here that the first cavity 120 may have a certain degree of vacuum, and may also be filled with gas of a certain pressure to achieve heat transfer.

[0037] In the embodiment of the present application, the base body 100 can be heated by the heating element 200. Since the density of the heating elements 200 in the first area is greater than the distribution density in the second area, the temperature of the first area is higher than the temperature of the second area. By setting the first cavity 120 in the first area, a certain space can be formed between at least part of the heating element 200 and the supporting surface 110, so that the heat transfer mode in the first cavity 120 is changed from direct heat conduction by solid to indirect heat conduction by air or heat transfer by thermal radiation, which can reduce the heat transfer efficiency here to a certain extent, and finally reduce the temperature in the first area.

[0038] Based on the above configuration, compared to a heating base without the first cavity 120, the carrier device in the embodiment of the present application can make the heat transfer method in the first area different from that in the second area by setting the first cavity 120 in the first area, so as to reduce the heat transfer efficiency in the first area, thereby reducing the temperature of the first area and approaching the temperature of the second area, so that the overall temperature of the base body 100 is close to the same, improving the problem of high temperature in the middle area, and further improving the temperature uniformity of the carrier device, ensuring the uniformity of the thin film generated on the wafer surface during the process, so as to improve the product yield.

[0039] refer to Figure 3 In order to arrange the heating element 200, the base body 100 may further be provided with a second cavity 130, the second cavity 130 is distributed in the first area and the second area, the heating element 200 may be arranged in the second cavity 130, and the heating element 200 may be accommodated by the second cavity 130. Optionally, the heating element 200 may be embedded in the second cavity 130, that is, the outer wall of the heating element 200 fits exactly with the inner wall of the second cavity 130, and there is no gap between the outer wall of the heating element 200 and the inner wall of the second cavity 130, so that the heating element 200 is firmly installed, and the heat generated by the heating element 200 is transferred to the base body 100, thereby improving the heat transfer efficiency.

[0040] Optionally, the second cavity 130 may be arranged in a spiral shape, such as in a "mosquito-repellent coil" shape, and accordingly, the heating element 200 may include a heating wire, which is arranged in a spiral shape in the second cavity 130. With this arrangement, the heating area can be expanded to improve the heating efficiency.

[0041] Since the first cavity 120 is located between the heating element 200 and the carrying surface 110, when the second cavity 130 is set, the second cavity 130 is located on the side of the first cavity 120 away from the carrying surface 110, so that the heating element 200 installed in the second cavity 130 can be separated from the carrying surface 110 by the first cavity 120.

[0042] In some embodiments, the second cavity 130 may be connected to the first cavity 120. Of course, the second cavity 130 and the first cavity 120 may be arranged opposite to each other along the axial direction of the base body 100. The specific arrangement may be selected according to actual conditions.

[0043] refer to Figure 2 In the embodiment of the present application, the first cavity 120 may have a first wall 121 close to the bearing surface 110 and a second wall 122 away from the bearing surface 110, so that the first wall 121 and the second wall 122 are arranged opposite to each other along the axial direction of the base body 100, thereby forming a certain space between the bearing surface 110 and the heating element 200.

[0044] In order to expose the heating element 200 , a through hole may be opened in the second wall surface 122 . The through hole connects the first cavity 120 and the second cavity 130 . Furthermore, the heating element 200 is disposed opposite to the first wall surface 121 through the through hole.

[0045] Based on the above arrangement, since a through hole is opened in the second wall 122, the upper surface of the heating element 200 is exposed. At this time, the heat generated by the heating element 200 can be transmitted to the first wall 121 to heat the first wall 121, and then the heat is transferred to the bearing surface 110 through the portion between the first wall 121 and the bearing surface 110 to achieve heating of the bearing surface 110.

[0046] It should be noted here that the heat transfer between the heating element 200 and the first wall 121 can be thermal radiation, thermal conduction using gas as the medium, or a mixed heat transfer method of thermal radiation and thermal conduction, which can be selected according to actual conditions.

[0047] In some embodiments, the first cavity 120 may be a vacuum cavity, that is, there is a certain degree of vacuum in the first cavity 120. At this time, since there is no heat transfer medium in the first cavity 120, heat can be transferred between the heating element 200 and the first wall 121 by thermal radiation.

[0048] In some other embodiments, the first cavity 120 may also contain gas at a preset pressure. In this case, the heat generated by the heating element 200 may be transferred to the first wall 121 through the gas, that is, heat transfer is performed by heat conduction. In addition, when the gas pressure in the first cavity 120 is relatively low, the heat generated by the heating element 200 may be transferred by both heat radiation and heat conduction, thereby realizing a mixed heat transfer method that combines heat radiation and heat conduction.

[0049] Optionally, the gas introduced into the first cavity 120 may be argon, helium, hydrogen, etc., but of course, it is not limited thereto, and may be any other gas that meets the requirements.

[0050] In the case where gas is introduced into the first cavity 120, considering that the gas concentration will affect the heat transfer effect to a certain extent, the embodiment of the present application can change the heat transfer effect by adjusting the gas concentration in the first cavity 120. Since the volume of the first cavity 120 remains unchanged, the concentration of the gas can be reflected by the gas pressure, that is, the greater the gas pressure in the first cavity 120, the more gas molecules there are, the greater the gas concentration, the better the heat transfer effect, and the higher the temperature of the bearing surface 110 in the area opposite to the first cavity 120; conversely, the smaller the gas pressure in the first cavity 120, the fewer gas molecules there are, the smaller the gas concentration, the worse the heat transfer effect, and the lower the temperature of the bearing surface 110 in the area opposite to the first cavity 120. Therefore, by controlling the gas pressure in the first cavity 120, flexible optimization of temperature distribution can be achieved.

[0051] Through simulation analysis, it can be seen that when the gas pressure in the first cavity 120 is 5 Torr (low pressure), the heat transfer is slow due to the relatively low gas pressure. At this time, the temperature of the middle area of ​​the base body 100 is low, about 395°C, and the temperature of the edge area (far away from the middle area) is high, about 398°C. Figure 4 shown.

[0052] When the gas pressure in the first cavity 120 is 90 Torr (medium pressure), the gas pressure is moderate and the heat transfer is moderate. At this time, the temperature of the middle area of ​​the base body 100 is not much different from that of the edge area, and the uniformity is good, both of which are about 398°C. Figure 5 shown.

[0053] When the gas pressure in the first cavity 120 is 300 Torr (high pressure), the heat transfer is fast because the gas pressure is relatively high. At this time, the temperature of the middle area of ​​the base body 100 is high, about 399° C., and the temperature of the edge area is low, about 398° C. Figure 6 shown.

[0054] It can be seen that the greater the gas pressure in the first cavity 120 , the higher the temperature in the middle area. Therefore, by controlling the gas pressure in the first cavity 120 , the temperature in the middle area can be controlled, and the temperature distribution of the base body 100 can be flexibly adjusted.

[0055] refer to Figure 1 In order to adjust the gas pressure in the first cavity 120, the carrier device may further include a gas supply component 300. The first cavity 120 has a gas inlet, which is connected to the gas supply component 300. In this way, the gas supply component 300 can pass gas into the first cavity 120 through the gas inlet, and can adjust the gas pressure in the first cavity 120, thereby adjusting the heat transfer effect.

[0056] In some embodiments, the gas supply component 300 may include a gas supply pipeline 310 and a pressure controller 320, wherein one end of the gas supply pipeline 310 is used to receive gas, and the other end of the gas supply pipeline 310 is connected to the air inlet, so that the gas can enter the first cavity 120 through the gas supply pipeline 310 and the air inlet.

[0057] The pressure controller 320 is arranged on the gas supply pipeline 310, so that when supplying gas to the first cavity 120, the gas pressure in the gas supply pipeline 310 can be controlled by the pressure controller 320, and the gas pressure in the gas supply pipeline 310 can be controlled at a set value. At this time, the gas pressure in the first cavity 120 can also reach the set value, thereby realizing the control of the gas pressure in the first cavity 120; and, the gas pressure values ​​in the gas supply pipeline 310 and the first cavity 120 can also be adjusted by the pressure controller 320 to meet different heat transfer requirements.

[0058] Optionally, one end of the gas supply pipeline 310 may be connected to a gas supply pump or a gas tank so that gas can be delivered to the gas supply pipeline 310 through the gas supply pump or the gas tank.

[0059] It should be noted here that the specific structure and working principle of the pressure controller 320 can refer to the relevant technology and will not be repeated here.

[0060] In some embodiments, the air supply component 300 may further include an air pump 330, and air can be pumped out by the air pump 330. The air supply pipeline 310 includes a main pipeline 311, a first branch 312, and a second branch 313, and the first branch 312 and the second branch 313 are both connected to the main pipeline 311; the pressure controller 320 is disposed on the main pipeline 311, the first branch 312 is communicated with the air inlet of the first cavity 120, and the air pump 330 is connected to the second branch 313.

[0061] Based on the above settings, the gas pressure of the main line 311 can be adjusted by the pressure controller 320. At the same time, the vacuum pump 330 can draw gas outward through the second branch 313, so that the gas can flow along the main line 311 toward the first branch 312 and the second branch 313, and the vacuum pump 330 can play a role in auxiliary pressure control.

[0062] It should be noted here that the air extraction pump 330 can be configured with a control valve, and the flow rate of the extracted gas can be controlled by adjusting the opening of the control valve.

[0063] For example, when the gas pressure in the main line 311 is constant, the gas flow rate is Q, and the gas flow rate extracted by the suction pump 330 is less than Q, the first branch 312 and the first cavity 120 will have a certain gas pressure, and as the gas flow rate extracted by the extraction pump gradually decreases, the gas pressure in the first branch 312 and the first cavity 120 gradually increases, thereby playing a role in auxiliary pressure control.

[0064] Based on the above configuration, the pressure controller 320 and the vacuum pump 330 can cooperate with each other to adjust and control the gas pressure in the first cavity 120 to meet different working conditions.

[0065] refer to Figure 2 In order to expand the overlapping area of ​​the first cavity 120 relative to the heating element 200, the first cavity 120 may include a plurality of cavity units 123, and each cavity unit 123 is respectively arranged relative to a partial area of ​​the heating element 200. In this way, a space can be formed between multiple positions of the heating element 200 and the carrying surface 110, so that the temperature at multiple positions in the first area can be reduced, and the temperature in the first area can be brought close to the temperature in the second area.

[0066] In order to inflate the multiple cavity units 123, each cavity unit 123 can be connected to the gas supply pipeline 310 through the third branch 314. In this way, the gas can be distributed to the multiple third branches 314 through the gas supply pipeline 310, and pass into each cavity unit 123 through the multiple third branches 314 one by one, so as to achieve the filling of gas into each cavity unit 123.

[0067] Of course, in other embodiments, an integral first cavity 120 may also be used. In this case, a space may be formed between the heating element 200 and the bearing surface 110 through the first cavity 120, thereby playing a role in reducing the temperature. However, considering that the heating element 200 does not completely fill the first area, but is dispersedly arranged in the first area, in order to avoid setting the first cavity 120 at a position deviating from the heating element 200, the projection of the first cavity 120 in a plane perpendicular to the axis of the base body 100 may be made to coincide with the projection of the heating element 200 in the plane, so that the heating element 200 and the bearing surface 110 may be separated in a targeted manner.

[0068] In addition, in order to prevent the temperature in the first area from being too low, cavity units 123 may be respectively arranged at positions opposite to partial areas of the heating element 200. In this way, a portion of the heating element 200 in the first area may be opposite to the carrying surface 110, while another portion of the area may be separated from the carrying surface 110 by the cavity unit 123, thereby reducing the degree of cooling and preventing the temperature in the first area from being too low.

[0069] In order to achieve the temperature control effect on the heating element 200, the carrying device may further include a temperature control heating rod 400, which is at least partially located inside the base body 100 and connected to the heating element 200. The temperature of the heating element 200 can be controlled to rise to a preset value by the temperature control heating rod 400 to meet the process requirements. It should be noted here that the specific structure of the temperature control heating rod 400 and its temperature control principle can be referred to the relevant technology and will not be repeated here.

[0070] In order to support the base body 100 , a support structure 500 may be connected to the side of the base body 100 away from the bearing surface 110 . The base body 100 may be supported by the support structure 500 to ensure that the base body 100 is more stable.

[0071] Based on the above-mentioned carrier device, an embodiment of the present application further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the above-mentioned carrier device.

[0072] To sum up, the embodiments of the present application can not only solve the problem of uneven temperature distribution on the base body 100, but also solve the problem that the temperature distribution on the base body 100 cannot be flexibly optimized in the later stage, so that the gas pressure in the first cavity 120 can be adjusted according to the actual process results to improve the temperature distribution, thereby optimizing the process uniformity. For example, in the actual process, the reaction rate at the center of the wafer is fast and the reaction rate at the edge is slow. By adopting the above-mentioned design method, the reaction rate at the center can be reduced by lowering the temperature at the center, thereby achieving the purpose of optimizing the process uniformity. In addition, the above-mentioned temperature control method is relatively flexible and has low cost.

[0073] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A carrying device, It is characterized in that include: A base body (100) and a heating element (200) distributed inside the base body (100); The base body (100) has a first area close to its middle area and a second area surrounding the first area, and the distribution density of the heating element (200) in the first area is greater than that in the second area; The base body (100) is provided with a first cavity (120) in the first area. Along the axial direction of the base body (100), the first cavity (120) is at least partially located between the heating element (200) and a carrying surface (110) of the base body (100), and the carrying surface (110) is used to carry a wafer, wherein the first cavity (120) has a first wall surface (121) close to the carrying surface (110) and a second wall surface (122) away from the carrying surface (110).

2. The carrying device according to claim 1, It is characterized in that The base body (100) is provided with a second cavity (130), the second cavity (130) is distributed in the first area and the second area, and the heating element (200) is arranged in the second cavity (130); The second cavity (130) is located on a side of the first cavity (120) away from the bearing surface (110), and the second cavity (130) is connected to the first cavity (120), or the second cavity (130) and the first cavity (120) are spaced apart along the axial direction of the base body (100).

3. The carrying device according to claim 2, It is characterized in that The first wall surface (121) and the second wall surface (122) are arranged opposite to each other; The second wall surface (122) is provided with a through hole, and the through hole communicates with the first cavity (120) and the second cavity (130); The heating element (200) is disposed opposite to the first wall surface (121) through the through hole.

4. The carrying device according to claim 3, It is characterized in that The first cavity (120) is a vacuum cavity, or the first cavity (120) contains gas at a preset pressure.

5. The carrying device according to claim 1, It is characterized in that The carrying device also includes an air supply component (300); The first cavity (120) has an air inlet, and the air inlet is connected to the air supply component (300).

6. The carrying device according to claim 5, It is characterized in that The gas supply component (300) comprises a gas supply pipeline (310) and a pressure controller (320); One end of the gas supply pipeline (310) is used to receive gas, and the other end of the gas supply pipeline (310) is connected to the gas inlet; The pressure controller (320) is arranged on the gas supply pipeline (310).

7. The carrying device according to claim 6, It is characterized in that The air supply component (300) further includes an air pump (330); The air supply pipeline (310) comprises a main pipeline (311) and a first branch pipeline (312) and a second branch pipeline (313); the first branch pipeline (312) and the second branch pipeline (313) are both connected to the main pipeline (311); the pressure controller (320) is arranged on the main pipeline (311); the first branch pipeline (312) is connected to the air inlet; and the air pump (330) is connected to the second branch pipeline (313).

8. The carrying device according to claim 6 or 7, It is characterized in that The first cavity (120) includes a plurality of cavity units (123); Each of the cavity units (123) is connected to the air supply pipeline (310) via a third branch (314), and each of the cavity units (123) is arranged opposite to at least a partial area of ​​the heating element (200).

9. The carrying device according to claim 1 or 2, It is characterized in that The heating element (200) comprises a heating wire, and the heating wire is spirally arranged inside the base body (100).

10. A semiconductor process equipment, It is characterized in that A carrying device comprising any one of claims 1 to 9.

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