Shower head and chemical vapor deposition device having the same
By designing cross-arranged process gas and clean gas spray holes on the nozzle, the film uneven problem caused by the nozzle surface contamination during chemical vapor deposition is solved, and the uniform spraying of process gas and the uniformity of the deposited film is achieved.
Patent Information
- Application Number
- CN202011435937.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-12-10
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2040-12-10
AI Technical Summary
During the chemical vapor deposition process, toxic gases and by-product gases in the process gas are prone to adhere to the surface of the nozzle, resulting in changes in the size and angle of the injection holes, resulting in uneven deposited films.
A spray head is designed, and multiple process gas spray holes and multiple cleaning gas spray holes are formed on the main body of the spray head. The injection direction of the cleaning gas spray hole intersects the process gas spray hole, and is used to spray cleaning gas around the process gas spray hole. Clean up the attached toxic gases and by-product gases to maintain uniformity of the spray holes.
It effectively avoids changes in the size and angle of the injection hole, ensures uniform spraying of process gas, and thus ensures uniformity of the chemical vapor deposition film.
Smart Images
Figure CN114622182B_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of semiconductor processing equipment, and specifically relates to a nozzle and a chemical vapor deposition device having the nozzle. Background Art
[0002] This section merely provides background information related to the present disclosure and is not necessarily prior art.
[0003] Chemical vapor deposition (CVD), as one of the semiconductor process technologies, refers to a method of using one or more gas phase compounds or single substances containing thin film elements to chemically react on the surface of a substrate to form a thin film. The chemical vapor deposition device mainly includes a reaction chamber, an air inlet nozzle, an electric field module, a radio frequency module, etc. The process gas is sprayed into the reaction chamber through the air inlet nozzle, and is deposited on the substrate under the action of the electric field. The angle of deposition on the substrate surface is then controlled by the radio frequency module, thereby completing the vapor deposition process.
[0004] Most of the process gases used in chemical vapor deposition are toxic gases. When the toxic gases flow through the air inlet nozzle, the surface of the air inlet nozzle will be contaminated. In addition, the byproduct gases after the process gases are decomposed in the reaction chamber are easy to adhere to the surface of the air inlet nozzle, which will also cause surface contamination of the air inlet nozzle. When the surface of the air inlet nozzle is contaminated, the size of the injection hole of the air inlet nozzle will change or the injection angle of the injection hole will change, resulting in uneven gas injection from the air inlet nozzle, and then uneven deposition of the film. Summary of the invention
[0005] An embodiment of the first aspect of the present invention proposes a nozzle, which includes a nozzle body, a plurality of process gas nozzles are formed on the nozzle body, and a plurality of cleaning gas nozzles are formed on the nozzle body. The injection direction of the cleaning gas nozzles intersects with the injection direction of the process gas nozzles, and is used to inject cleaning gas to the nozzle body around the process gas nozzles.
[0006] An embodiment of the second aspect of the present invention provides a chemical vapor deposition device, which includes a reaction chamber and a nozzle, wherein the nozzle is arranged inside the reaction chamber and the nozzle is the nozzle according to the above embodiment. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the specific embodiments below. The accompanying drawings are only used for the purpose of illustrating specific embodiments and are not to be considered as limiting the present application. In addition, the same reference numerals are used throughout the accompanying drawings to represent the same components. Among them:
[0008] Figure 1 It is a structural schematic diagram of the nozzle of the present invention;
[0009] Figure 2 for Figure 1 A bottom view of one embodiment of the spray head shown;
[0010] Figure 3 for Figure 2 A bottom view of another embodiment of a spray head is shown.
[0011] Reference numerals:
[0012] 100: nozzle;
[0013] 10: nozzle body, 11: shell, 12: diffusion plate, 121: raised portion, 1211: annular structure, 1212: first connecting channel, 1213: columnar structure, 1214: second connecting channel, 1215: third connecting channel, 101: process gas nozzle, 102: cleaning gas nozzle, 103: process gas channel, 104: cleaning gas channel, 105: process gas inlet, 106: cleaning gas inlet. DETAILED DESCRIPTION
[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.
[0015] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various chambers and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may design chambers / layers with different shapes, sizes, and relative positions according to actual needs.
[0016] In the context of the present disclosure, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element or an intervening layer / element may exist therebetween. In addition, if a layer / element is "on" another layer / element in one orientation, the layer / element may be "below" the other layer / element when the orientation is reversed.
[0017] like Figure 1As shown, an embodiment of the first aspect of the present invention proposes a nozzle 100, which includes a nozzle body 10, on which a plurality of process gas nozzles 101 are formed, and on which a plurality of cleaning gas nozzles 102 are formed, wherein the spraying direction of the cleaning gas nozzles 102 intersects with the spraying direction of the process gas nozzles 101, and is used to spray cleaning gas to the nozzle body 10 around the process gas nozzles 101.
[0018] According to the nozzle 100 of the embodiment of the present invention, the nozzle body 10 sprays clean gas to the surface of the nozzle body 10 through the clean gas nozzle hole 102, so as to clean up the toxic gas deposits and by-product gas deposits attached to the surface of the nozzle body 10, and avoid the contamination deposited on the surface of the nozzle body 10 affecting the size of the process gas nozzle hole 101 or its injection angle, thereby ensuring the uniformity of the process gas sprayed from the nozzle 100 to the substrate, and further ensuring the uniformity of the thin film obtained by the chemical vapor deposition method.
[0019] In some embodiments of the present invention, the nozzle 100 includes a housing 11 and a diffuser plate 12, wherein the diffuser plate 12 is a circular plate body, the housing 11 is connected to the diffuser plate 12, a process gas channel 103 is formed between the housing 11 and the diffuser plate 12, and the process gas channel 103 is connected to a plurality of process gas nozzles 101. The process gas enters the process gas channel 103 through the process gas inlet 105, and then enters each process gas nozzle 101 through the process gas channel 103, and finally is sprayed onto the surface of the substrate (not shown in the figure) through the process gas nozzle 101 on the diffuser plate 12.
[0020] A clean gas channel 104 is formed between the housing 11 and the diffuser plate 12, and the clean gas channel 104 is connected to the plurality of clean gas nozzles 102. The clean gas enters the clean gas channel 104 through the clean gas inlet, and then enters each clean gas nozzle 102 through the clean gas channel 104. Finally, the clean gas is sprayed onto the surface of the diffuser plate 12 through the clean gas nozzles 102 to clean the surface of the diffuser plate 12, thereby preventing the size and spray angle of the process gas nozzles 101 on the surface of the diffuser plate 12 from changing.
[0021] Further, a protrusion 121 is provided on the diffuser plate 12, and the protrusion 121 extends from the diffuser plate 12 in a direction away from the housing 11, that is, the protrusion 121 protrudes from the diffuser plate 12. A plurality of clean gas spray holes 102 are provided on the protrusion 121, and a plurality of process gas spray holes 101 are provided on the diffuser plate 12. Since the protrusion 121 protrudes from the diffuser plate 12, the distance between the clean gas spray hole 102 and the housing 11 is greater than the distance between the process gas spray hole 101 and the housing 11. The clean gas spray hole 102 is provided on the side of the protrusion 121, and the clean gas spray hole 102 is arranged toward the diffuser plate 12, so as to ensure that the clean gas can be sprayed onto the surface of the diffuser plate 12 to clean the surface of the diffuser plate 12.
[0022] Specifically, the cleaning gas injection hole 102 may be an inclined hole, the angle between the inclined hole and the diffuser plate 12 is an acute angle, and the inclined hole is arranged toward the diffuser plate 12. The cleaning gas injection hole 102 may also be perpendicular to the flow direction of the process gas and flush with the outer end surface of the diffuser plate 12. Any cleaning gas injection hole 102 that can spray the cleaning gas onto the surface of the diffuser plate 12 may be used.
[0023] In addition, a cavity is formed inside the protrusion 121 , and the cavity is communicated with the clean gas channel 104 , so that the clean gas in the clean gas channel 104 enters the clean gas injection hole 102 through the cavity.
[0024] Specifically, Figure 2 As shown, the raised portion 121 includes three annular structures 1211 with different diameters, each of which has a cavity formed therein. The three annular structures 1211 are interconnected through a first connecting channel 1212. The clean gas enters the outermost annular structure 1211 through the clean gas channel 104 and fills the annular structure 1211, then enters the middle annular structure 1211 through the first connecting channel 1212 and fills the middle annular structure 1211, then enters the innermost annular structure 1211 through the first connecting channel 1212 and fills the innermost annular structure 1211.
[0025] The three annular structures 1211 are coaxially arranged to ensure uniformity of the cleaning gas sprayed onto the surface of the diffuser plate 12. A plurality of process gas spray holes 101 are arranged between two adjacent annular structures 1211, and the plurality of process gas spray holes 101 form two groups of process gas spray hole groups arranged along the circumference of the diffuser plate 12, so as to prevent the area of the diffuser plate 12 between two adjacent annular structures 1211 from being too large, thereby preventing the cleaning gas from incompletely cleaning the surface of the diffuser plate 12.
[0026] The two annular sides of the innermost and middle annular structures 1211 are both provided with a plurality of cleaning gas injection holes 102, so that the cleaning gas is injected from both sides of the innermost and middle annular structures 1211 toward the diffuser plate 12, thereby improving the cleaning efficiency of the surface of the diffuser plate 12. The outermost annular structure 1211 is located at the outermost side of the plurality of process gas injection holes 101, so the outer side of the outermost annular structure 1211 is not provided with a cleaning gas injection hole 102, and the cleaning gas injection hole 102 is only provided on the inner side.
[0027] In this embodiment, three annular structures 1211 are combined. In other embodiments, the number of the annular structures 1211 can be set to two, four, five or more according to the size of the nozzle 100 and the size of the diffusion plate 12.
[0028] In some embodiments of the present invention, Figure 3 As shown, the protrusion 121 includes a plurality of columnar structures 1213, and the plurality of columnar structures 1213 are interconnected through the second connection channel 1214 and the third connection channel 1215. Specifically, the plurality of columnar structures 1213 are evenly arranged along the circumference of the diffuser plate 12, and form three annular structure groups, the three annular structure groups are connected through the second connection channel 1214, each annular structure is connected through the third connection channel 1215, and the second connection channel 1214 is connected with the three third connection channels 1215. The clean gas enters different third connection channels 1215 through the second connection channel 1214, and then diffuses into the plurality of columnar structures 1213, and then is sprayed onto the surface of the diffuser plate 12 through the clean gas spray hole 102.
[0029] One or two process gas spray holes 101 are provided between two adjacent columnar structures 1213 to ensure that the spraying area of the cleaning gas spray holes 102 provided on the two columnar structures 1213 can cover the area of the diffusion plate 12 between the two columnar structures 1213, thereby ensuring that the cleaning gas cleans the diffusion plate 12 thoroughly.
[0030] Specifically, the plurality of cleaning gas spray holes 102 are arranged along the circumference of the side surface of the columnar structure 1213 to ensure that the cleaning gas is sprayed in multiple directions through the columnar structure 1213, thereby increasing the spraying area of the cleaning gas and improving the cleaning efficiency.
[0031] In this embodiment, the protrusions 12 are provided with cleaning gas spray holes 102 . In other embodiments, annular grooves may be provided on both sides of the protrusions 12 to increase the spray area of the cleaning gas and reduce the difficulty of machining the protrusions 12 .
[0032] In some embodiments of the present invention, a plurality of process gas nozzles 101 are arranged at intervals in the radial direction of the nozzle body 10 , and a plurality of process gas nozzles 101 are arranged at intervals in the circumferential direction of the nozzle body 10 , to ensure that the process gas nozzles 101 spray the process gas uniformly in the radial and circumferential directions of the diffuser plate 12 .
[0033] The plurality of cleaning gas nozzles 102 are arranged at intervals along the radial direction of the nozzle body 10 , and the plurality of process gas nozzles 101 are arranged at even intervals along the circumference of the nozzle body 10 , to ensure that the cleaning gas nozzles 102 spray cleaning gas uniformly toward the diffuser plate 12 along the radial and circumferential directions of the diffuser plate 12 .
[0034] The plurality of process gas injection holes 101 and the plurality of cleaning gas injection holes 102 are arranged alternately to ensure that each position of the diffusion plate 12 can be cleaned by the cleaning gas.
[0035] In some embodiments of the present invention, the nozzle 100 is made of aluminum, nickel, chromium, or nickel-chromium alloy. The nozzle containing aluminum, nickel, chromium, or nickel-chromium alloy has the advantages of corrosion resistance and high temperature resistance. The nozzle 100 can avoid being easily corroded by process gas.
[0036] In this embodiment, the number of process gas nozzles 101 is 2 to 10,000, and the number of cleaning gas nozzles 102 is 2 to 10,000. In other embodiments, the number of process gas nozzles 101 and the number of cleaning gas nozzles 102 are not limited and can be designed according to the size of the nozzle head 100.
[0037] An embodiment of the second aspect of the present invention provides a chemical vapor deposition device, which includes a reaction chamber and a nozzle 100. The nozzle 100 is arranged inside the reaction chamber. The nozzle 100 is a nozzle 100 according to any of the above embodiments.
[0038] In the chemical vapor deposition device according to the embodiment of the present invention, the nozzle body 10 sprays clean gas toward the surface of the nozzle body 10 through the clean gas nozzle hole 102, so as to clean up the toxic gas deposits and by-product gas deposits attached to the surface of the nozzle body 10, and prevent the contamination deposited on the surface of the nozzle body 10 from affecting the size of the process gas nozzle hole 102 or its injection angle, thereby ensuring the uniformity of the process gas sprayed from the nozzle 100 to the substrate, and further ensuring the uniformity of the thin film obtained by the chemical vapor deposition method.
[0039] The embodiments of the present disclosure are described above. However, these embodiments are only for the purpose of illustration and are not intended to limit the scope of the present disclosure. In order to achieve the same purpose, those skilled in the art may also design methods that are not completely the same as the methods described above. The scope of the present disclosure is defined by the attached claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.
Claims
1. A nozzle, characterized in that: The nozzle includes a nozzle body, a plurality of process gas spray holes are formed on the nozzle body, a plurality of cleaning gas spray holes are formed on the nozzle body, the spray direction of the cleaning gas spray holes intersects with the spray direction of the process gas spray holes, and is used to spray cleaning gas to the nozzle body around the process gas spray holes; the nozzle body includes a shell and a diffuser, the shell is connected to the diffuser, a protrusion is provided on the diffuser, the protrusion extends from the diffuser in a direction away from the shell, a plurality of the cleaning gas spray holes are provided on the protrusion, and a plurality of the process gas spray holes are opened on the diffuser; a clean gas channel is formed between the shell and the diffuser, and the clean gas channel is connected to the plurality of the cleaning gas spray holes; the protrusion includes a plurality of annular structures with different diameters, the plurality of the annular structures are coaxially arranged, the plurality of the annular structures are connected to each other, a plurality of the process gas spray holes are provided between two adjacent annular structures, and a plurality of the cleaning gas spray holes are provided on the side of the annular structure.
2. The nozzle according to claim 1, characterized in that: The raised portion includes a plurality of columnar structures, which are interconnected and arranged at intervals on the diffusion plate. The process gas spray holes are arranged between two adjacent columnar structures, and a plurality of cleaning gas spray holes are arranged on the side of each columnar structure.
3. The nozzle according to claim 2, characterized in that: The plurality of cleaning gas spray holes are arranged along a circumferential direction of the side surface of the columnar structure.
4. The nozzle according to claim 1, characterized in that: The plurality of process gas spray holes are arranged at intervals along the radial direction of the spray head body, the plurality of cleaning gas spray holes are arranged at intervals along the radial direction of the spray head body, and the plurality of process gas spray holes and the plurality of cleaning gas spray holes are arranged alternately.
5. The nozzle according to claim 1, characterized in that: The plurality of process gas spray holes are evenly spaced and arranged along the circumference of the spray head body, and the plurality of cleaning gas spray holes are evenly arranged along the circumference of the spray head body.
6. The nozzle according to any one of claims 1 to 5, characterized in that: The nozzle is made of aluminum, nickel, chromium, or nickel-chromium alloy.
7. A chemical vapor deposition device, characterized in that: The chemical vapor deposition device comprises a reaction chamber and a nozzle, wherein the nozzle is arranged inside the reaction chamber and the nozzle is the nozzle according to any one of claims 1 to 6.