Chip-integrated optical modulation method based on two-dimensional layered materials

Abstract

This invention discloses a chip-integrated optical modulation method based on two-dimensional layered materials. A large-area, directionally transferred two-dimensional layered materials, represented by transition metal sulfides, are applied to the surface of a chip-integrated optical modulator. Free carriers are generated through optical field radiation, and the refractive index of the chip-integrated waveguide is adjusted to achieve phase modulation of the transmitted optical field within the waveguide. This optical modulation method avoids chip-integrated waveguide breakdown caused by excessively high modulation voltage, while possessing modulation speeds similar to electro-optic modulation methods. It is highly compatible with existing silicon-on-insulator (SiI) passive optical device fabrication processes and is expected to promote the standardized fabrication of chip-integrated optical modulators, providing an important reference for all-optically driven chip-integrated optical paths.

Description

Technical Field

[0001] The present invention belongs to the interdisciplinary field of integrated optics, semiconductor physics and microwave photonics, and specifically refers to a method for achieving light field phase modulation by adjusting the refractive index of chip integrated waveguides through photoinduced free carriers of two-dimensional layered materials, and more particularly to a chip integrated light-controlled modulation method, system and storage medium based on two-dimensional layered materials. Background Art

[0002] Large-scale chip integrated optical circuit technology has developed rapidly in recent years. Compared with traditional discrete device free space optical circuits and all-fiber optical circuits, chip integrated optical circuits have many advantages such as small size, low power consumption, stable performance, etc., and are particularly suitable for building optical systems with relatively complex structures and functions, such as optical communication systems, optical computing systems, all-optical signal processing systems, and microwave photonic systems.

[0003] The performance of chip-integrated optical systems is highly dependent on the performance of discrete devices. With the continuous development of silicon-based optoelectronics manufacturing technology, various passive optical devices based on silicon-on-insulator platforms, including optical directional couplers, optical beam splitters, polarization beam splitters, wavelength division multiplexers, etc., have gradually completed the development process from structural design, performance optimization to standardized manufacturing. On the other hand, as an important active device, chip-integrated optical modulators play an important role in all-optical communication signal encoding and decoding systems, optical interferometers, optical switches and other systems. However, the problems of low modulation rate and complex manufacturing process have never been effectively solved: the thermo-optical modulation method is affected by the dissipation time and has a low rate, and the suspended structure that can shorten the dissipation time has poor mechanical strength; the electro-optical modulation method can achieve fast modulation by controlling the free carrier concentration, but it requires a separate ion implantation process (PIN structure) and electrode growth process, and is prone to breakdown at higher modulation voltages. Summary of the invention

[0004] Based on the problems of the prior art, the technical problem to be solved by the present invention is how to prepare the passive part of the chip-integrated optical modulator (i.e., the transmission waveguide) through a standard process flow, and transfer the two-dimensional layered material represented by transition metal sulfides to the surface of the transmission waveguide in a lossless and directionally manner; modulate the radiation light field with a modulation signal and irradiate the two-dimensional layered material, at which time the two-dimensional layered material generates free carriers through the photoelectric effect and causes the refractive index of the transmission waveguide to change; the phase of the transmission light field in the waveguide replicates the modulation signal as the refractive index changes to complete the optically controlled modulation.

[0005] In order to achieve the above-mentioned effects, the chip-integrated optically controlled modulation method based on two-dimensional layered materials provided by the present invention prepares the passive part of the chip-integrated optical modulator through a standard process flow, and transfers the two-dimensional layered material represented by transition metal sulfides to the surface of the transmission waveguide losslessly and directionally, thereby realizing effective bonding between the two-dimensional layered material and the waveguide surface; uses a modulation signal to control an external light source to generate a radiation light field that replicates the modulation signal, and uses the radiation light field to irradiate the two-dimensional layered material in the area to be modulated, thereby generating free carriers through the photoelectric effect and causing the refractive index of the transmission waveguide to change, and this refractive index change will affect the phase of the light field transmitted in the waveguide, thereby realizing chip-integrated optical field modulation with the radiation light field as the driving source.

[0006] Preferably, the above method specifically includes:

[0007] Step 1: preparing the passive part of the chip-integrated optical modulator;

[0008] Step 2: Using a series of process methods, the two-dimensional layered material is non-destructively transferred to the waveguide surface;

[0009] Step 3: Influence the phase distribution of the transmitted light field and realize optical control modulation.

[0010] Preferably, in the above step 1, the waveguide that effectively transmits the X-band transmission light field, the waveguide cross-sectional structure needs to be optimized to make the transmission loss low and the waveguide refractive index sensitively change, the waveguide length needs to be optimized to take into account both low transmission loss and large modulation depth, and the waveguide spatial arrangement needs to be optimized to make the two-dimensional layered material cover as accurately as possible.

[0011] Preferably, in the above step 2, the two-dimensional layered material is losslessly and directionally transferred to the waveguide surface by chemical vapor deposition. The thickness of the two-dimensional layered material needs to be optimized so that the free carrier concentration generated per unit light radiation intensity is maximized and the dissipation time is minimized. The two-dimensional layered material can fit tightly to the upper and side surfaces of the waveguide or only to the upper surface.

[0012] Preferably, in the above step three, the modulation signal is loaded onto the radiation light source, and the free carriers generated by irradiation of the Y-band radiation light field modulate the refractive index of the waveguide, thereby affecting the phase distribution of the transmission light field and realizing light-controlled modulation.

[0013] Preferably, the above method realizes chip integrated optical modulation controlled by light field by generating free carriers under the action of radiation light field through the two-dimensional layered material covering the upper surface of chip integrated waveguide, affecting the phase distribution of the light field transmitted in the waveguide through the change of the waveguide refractive index.

[0014] Preferably, the passive part of the above modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, the transmission light field to be modulated is transmitted radially along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a two-dimensional layered material of molybdenum disulfide.

[0015] Preferably, loading the modulation signal onto a radiation light source can generate a radiation light field that replicates the modulation signal. Irradiating the radiation light field onto a two-dimensional layered material of molybdenum disulfide can generate free carriers that replicate the modulation signal, and further generate a change in the refractive index of a silicon-based waveguide that replicates the modulation signal.

[0016] A system for realizing the above-mentioned chip-integrated optically controlled modulation method based on two-dimensional layered materials, comprising a chip-integrated optically controlled modulator, wherein the passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, the transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a molybdenum disulfide two-dimensional layered material; the two-dimensional layered material is losslessly and directionally transferred to the waveguide surface by chemical vapor deposition, the thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration generated per unit light radiation intensity and minimize the dissipation time, and the two-dimensional layered material is closely attached to the upper surface and side surface of the waveguide, or only to the upper surface; the radiation light field is irradiated on the surface of the two-dimensional layered material, causing the free carrier concentration to change, and the refractive index of the chip-integrated waveguide covered with the two-dimensional layered material changes and affects the phase distribution of the transmission light field.

[0017] A computer-readable storage medium stores a computer program, which implements the above method when executed by a processor.

[0018] Compared with the prior art, the chip-integrated optical modulator described in the present invention is driven by a radiation light field, has a simple preparation process (no need to grow electrodes), a high modulation rate (no need for heat dissipation), and avoids the risk of waveguide breakdown, providing a new idea for high-performance all-optical drive chip integrated optical circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the following briefly introduces the drawings required for use in the embodiment of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic diagram of the principle of a chip-integrated light-controlled modulator based on two-dimensional layered materials of the present invention is shown. DETAILED DESCRIPTION

[0021] The features and exemplary embodiments of various aspects of the present invention will be described in detail below. In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and Examples. It should be understood that the specific embodiments described herein are only configured to explain the present invention and are not configured to limit the present invention. For those skilled in the art, the present invention can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by illustrating examples of the present invention.

[0022] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0023] The present invention provides an embodiment of a chip-integrated optically controlled modulation method based on two-dimensional layered materials. The passive part of the chip-integrated optical modulator is prepared through a standard process flow, and the two-dimensional layered material represented by transition metal sulfides is losslessly and directionally transferred to the surface of a transmission waveguide, thereby achieving effective bonding between the two-dimensional layered material and the waveguide surface; a modulation signal is used to control an external light source to generate a radiation light field that replicates the modulation signal, and the radiation light field is used to irradiate the two-dimensional layered material in the area to be modulated, thereby generating free carriers through the photoelectric effect and causing the refractive index of the transmission waveguide to change. This refractive index change will affect the phase of the light field transmitted in the waveguide, thereby achieving chip-integrated light field modulation with the radiation light field as the driving source.

[0024] In some embodiments, the method specifically comprises:

[0025] Step 1: preparing the passive part of the chip-integrated optical modulator;

[0026] Step 2: Using a series of process methods, the two-dimensional layered material is non-destructively transferred to the waveguide surface;

[0027] Step 3: Influence the phase distribution of the transmitted light field and realize optical control modulation.

[0028] In some embodiments, in step 1, a waveguide is used to effectively transmit an X-band transmission light field. The waveguide cross-sectional structure needs to be optimized to ensure low transmission loss and sensitive changes in the waveguide refractive index. The waveguide length needs to be optimized to ensure both low transmission loss and large modulation depth. The waveguide spatial arrangement needs to be optimized to ensure that the two-dimensional layered material is covered as accurately as possible.

[0029] In some embodiments, step two is to transfer the two-dimensional layered material to the waveguide surface non-destructively and directionally by chemical vapor deposition. The thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration generated per unit light radiation intensity and minimize the dissipation time. The two-dimensional layered material can fit tightly to the upper and side surfaces of the waveguide or only to the upper surface.

[0030] In some embodiments, step three loads the modulation signal onto the radiation light source, and the free carriers generated by the Y-band radiation light field modulate the waveguide refractive index, thereby affecting the phase distribution of the transmitted light field and realizing light-controlled modulation.

[0031] In some embodiments, the method realizes chip-integrated optical modulation controlled by light field by generating free carriers through the two-dimensional layered material covering the upper surface of the chip-integrated waveguide under the action of the radiation light field, affecting the phase distribution of the transmitted light field in the waveguide through the change of the waveguide refractive index.

[0032] In some embodiments, the passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, the transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a two-dimensional layered material of molybdenum disulfide.

[0033] In some embodiments, loading a modulated signal onto a radiation light source can generate a radiation light field that replicates the modulation signal. Irradiating the radiation light field onto a two-dimensional layered material of molybdenum disulfide can generate free carriers that replicate the modulation signal, and further generate a change in the refractive index of a silicon-based waveguide that replicates the modulation signal.

[0034] The present invention provides a system embodiment for realizing the above-mentioned chip-integrated optically controlled modulation method based on two-dimensional layered materials, including a chip-integrated optically controlled modulator, wherein the passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, and the transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a molybdenum disulfide two-dimensional layered material; the two-dimensional layered material is losslessly and directionally transferred to the waveguide surface by chemical vapor deposition, and the thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration generated per unit light radiation intensity and minimize the dissipation time, and the two-dimensional layered material is tightly attached to the upper surface and side surface of the waveguide, or it can only be attached to the upper surface; the radiation light field is irradiated on the surface of the two-dimensional layered material, causing the free carrier concentration to change, and the refractive index of the chip-integrated waveguide covered by the two-dimensional layered material changes and affects the phase distribution of the transmission light field.

[0035] Figure 1 As shown, the present invention provides an embodiment of a chip-integrated optically controlled modulator based on a two-dimensional layered material of molybdenum disulfide and relying on a silicon-on-insulator preparation process, wherein the passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, and the transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a two-dimensional layered material of molybdenum disulfide; loading a modulation signal on a radiation light source can generate a radiation light field that replicates the modulation signal, and irradiating the radiation light field on the two-dimensional layered material of molybdenum disulfide can generate free carriers that replicate the modulation signal, and further generate a refractive index change of the silicon-based waveguide that replicates the modulation signal; the transmission light field senses this refractive index change, and the phase distribution replicates the modulation signal, thereby realizing the modulation conversion from the initial modulation signal to the transmission light field phase.

[0036] The present invention provides an embodiment of a chip integrated light-controlled modulation method based on two-dimensional layered materials, comprising:

[0037] S101. Prepare the passive part of the chip-integrated optical modulator, that is, the waveguide that can effectively transmit the X-band transmission light field. The waveguide cross-sectional structure needs to be optimized to ensure low transmission loss and sensitive change of the waveguide refractive index. The waveguide length needs to be optimized to take into account low transmission loss and large modulation depth. The waveguide spatial arrangement needs to be optimized to ensure that the two-dimensional layered material is covered as accurately as possible.

[0038] S102. The two-dimensional layered material (which can generate free carriers under light field radiation) can be transferred to the waveguide surface in a lossless and directional manner by chemical vapor deposition or other methods. The thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration generated per unit light radiation intensity and minimize the dissipation time. The two-dimensional layered material can be closely attached to the upper surface and side surface of the waveguide or only to the upper surface.

[0039] S103, loading the modulation signal onto the radiation light source, and modulating the waveguide refractive index by free carriers generated by irradiation with the Y-band radiation light field (the frequency of the light field must be higher than the band gap energy of the two-dimensional layered material), thereby affecting the phase distribution of the transmitted light field and realizing optically controlled modulation.

[0040] The present invention provides an embodiment of a chip-integrated optically controlled modulation method based on two-dimensional layered materials, which realizes chip-integrated optical modulation controlled by the light field by generating free carriers under the action of a radiation light field through the two-dimensional layered material covering the upper surface of a chip-integrated waveguide and influencing the phase distribution of the light field transmitted in the waveguide through the change of the waveguide refractive index.

[0041] In some embodiments, the chip integrated waveguide can be prepared by a standard chip integrated optical path process, has a certain degree of freedom in structural design, can efficiently and losslessly transmit light fields, and can produce a change in refractive index under the action of free carriers. The material platform used for the chip integrated waveguide includes but is not limited to silicon on insulator, hydrogenated amorphous silicon, silicon nitride, silicon carbide, chalcogenide glass, high refractive index quartz, III-V aluminum gallium arsenide, III-V indium phosphide, etc., and a single material integration method or a multi-material hybrid integration method can be used;

[0042] In some embodiments, the two-dimensional layered material can control structural parameters through the growth process, can be non-destructively transferred to the chip integrated waveguide surface through standard processes and achieve tight fitting, can produce photoelectric effect to generate free carriers under the action of light field, and can accurately control electro-optical parameters with lattice structure and film thickness as degrees of freedom. The two-dimensional layered materials include but are not limited to graphene, transition metal sulfides (molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, platinum diselenide, rhenium disulfide, rhenium diselenide, indium triselenide, etc.), black phosphorus and MXene, etc.

[0043] In some embodiments, in optical modulation, the incident light field irradiates the surface of the two-dimensional layered material, causing the free carrier concentration to change, and the refractive index of the chip integrated waveguide covered by the two-dimensional layered material changes and affects the phase distribution of the transmitted light field; the frequency of the radiated light field needs to be higher than the band gap energy of the two-dimensional layered material; the radiation light source can be either a laser or an incoherent light source such as an LED, the radiation light source can be either an external light source or an internal light source (that is, the optical modulator is integrated on the same chip), and the modulation of the radiation light source can be either an external modulation method (that is, modulating after generating the radiation light field) or an internal modulation method (that is, using a modulation signal to drive the radiation light field); there is no limit on the wavelength of the radiation light field and the transmitted light field, no limit on the modulation signal and the application type, no limit on the waveguide structure parameters, and no limit on the number of radiation light sources, deployment positions and luminous intensity.

[0044] Compared with the prior art, the present invention has the following advantages:

[0045] Firstly, the optical control modulation method of the present invention does not use chip integrated electrodes and external modulation voltage, does not require ion implantation (i.e., PIN structure) and chip integrated electrode generation process, and avoids the waveguide breakdown problem caused by excessive modulation voltage, has a simple structure and reliable performance;

[0046] Secondly, the maximum modulation rate of the modulation method of the present invention depends on the free carrier dissipation speed, and the modulation speed is much higher than the traditional thermo-optical modulation method;

[0047] In addition, the present invention provides a new idea for light field control. The design concept of using the radiation light field to control the transmission light field is expected to be widely used in the fields of direct communication of wired and wireless optical communication signals, wavelength conversion of all-optical communication signals, etc.

[0048] For the convenience of description, the above device is described in terms of functions and is described separately in various units. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0049] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0050] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0051] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0052] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0053] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0054] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0055] The memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0056] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0057] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0058] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0059] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A chip-integrated optically controlled modulation method based on two-dimensional layered materials, which comprises preparing the passive part of the chip-integrated optical modulator through a standard process flow, transferring the two-dimensional layered material of molybdenum disulfide to the surface of a transmission waveguide losslessly and directionally, and realizing effective bonding between the two-dimensional layered material and the waveguide surface; using a modulation signal to control an external light source to generate a radiation light field that replicates the modulation signal, and irradiating the two-dimensional layered material in the area to be modulated with the radiation light field, generating free carriers through the photoelectric effect and causing a change in the refractive index of the transmission waveguide, which will affect the phase of the light field transmitted in the waveguide, and realizing chip-integrated optical field modulation with the radiation light field as the driving source.

2. The chip integrated light-controlled modulation method based on two-dimensional layered materials according to claim 1, characterized in that: The method specifically comprises: Step 1: Prepare the passive part of the chip-integrated optical modulator, a waveguide that effectively transmits the X-band transmission light field. The waveguide cross-sectional structure needs to be optimized to ensure low transmission loss and sensitive change of the waveguide refractive index. The waveguide length needs to be optimized to take into account low transmission loss and large modulation depth. The waveguide spatial arrangement needs to be optimized to ensure that the two-dimensional layered material is covered as accurately as possible. Step 2: Transfer the two-dimensional layered material to the waveguide surface non-destructively and directionally by chemical vapor deposition. The thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration per unit light radiation intensity and minimize the dissipation time. The two-dimensional layered material can be closely attached to the upper surface and side surface of the waveguide or only to the upper surface. Step 3: Influence the phase distribution of the transmission light field and realize optically controlled modulation. Load the modulation signal on the radiation light source, and modulate the waveguide refractive index by free carriers generated by irradiation of the Y-band radiation light field, thereby influencing the phase distribution of the transmission light field and realizing optically controlled modulation.

3. The chip integrated light-controlled modulation method based on two-dimensional layered materials according to claim 1, characterized in that: The method realizes chip integrated optical modulation controlled by light field by using free carriers generated by a two-dimensional layered material covering the upper surface of a chip integrated waveguide under the action of a radiation light field and by affecting the phase distribution of the light field transmitted in the waveguide through changes in the refractive index of the waveguide.

4. The chip integrated light-controlled modulation method based on two-dimensional layered materials according to claim 1, characterized in that: The passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide. The transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a two-dimensional layered material of molybdenum disulfide.

5. The chip integrated light-controlled modulation method based on two-dimensional layered materials according to claim 1, characterized in that: Loading the modulation signal onto a radiation light source can generate a radiation light field that replicates the modulation signal. Irradiating the radiation light field onto a two-dimensional layered material of molybdenum disulfide can generate free carriers that replicate the modulation signal, and further generate a change in the refractive index of a silicon-based waveguide that replicates the modulation signal.

6. A system for implementing the chip-integrated optical modulation method based on two-dimensional layered materials as described in any one of claims 1 to 5, comprising a chip-integrated optical modulator, wherein the passive part of the modulator is mainly composed of a silicon dioxide substrate and a silicon-based waveguide, the transmission light field to be modulated is radially transmitted along the silicon-based waveguide, and the upper surface of the silicon-based waveguide is covered with a two-dimensional layered material of molybdenum disulfide; the two-dimensional layered material is losslessly and directionally transferred to the waveguide surface by chemical vapor deposition, the thickness of the two-dimensional layered material needs to be optimized to maximize the free carrier concentration generated per unit light radiation intensity and minimize the dissipation time, the two-dimensional layered material is tightly attached to the upper surface and side surface of the waveguide, or it can only be attached to the upper surface; the radiation light field is irradiated on the surface of the two-dimensional layered material, causing the free carrier concentration to change, and the refractive index of the chip-integrated waveguide covered with the two-dimensional layered material changes and affects the phase distribution of the transmission light field.

7. A computer-readable storage medium having a computer program stored thereon, wherein the program, when executed by a processor, implements the method according to any one of claims 1 to 5.

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