Method for forming corrosion-resistant coating, semiconductor component, and plasma processing apparatus

Abstract

A method for forming a corrosion resistant coating, a semiconductor component and a plasma processing device, the method for forming a corrosion resistant coating comprising: providing a component body; subjecting the component body to an electrochemical reaction in an electrolytic cell, the electrolyte in the electrolytic cell comprising hydrogen ions and yttrium ions, forming a corrosion resistant coating on the surface of the component body, the corrosion resistant coating comprising a yttrium aluminum oxide coating; and subjecting the yttrium aluminum oxide coating to a sealing treatment to form a crystalline yttrium aluminum oxide coating. The corrosion resistant coating is resistant to plasma corrosion.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a method for forming a corrosion-resistant coating on the surface of a component body, a semiconductor component, and a plasma treatment apparatus. Background Technology

[0002] In the manufacturing process of semiconductor devices, plasma etching is a key process for processing wafers into designed patterns.

[0003] In a typical plasma etching process, process gases (such as CF4, O2, etc.) form plasma under radio frequency (RF) excitation. These plasmas, after passing through the electric field (capacitive coupling or inductive coupling) between the upper and lower electrodes, physically bombard and chemically react with the wafer surface, thereby etching a wafer with a specific structure.

[0004] However, during plasma etching, the physical bombardment and chemical reactions also affect all components inside the etching chamber that come into contact with the plasma, causing corrosion. For workpieces within the etching chamber, a plasma-resistant coating (e.g., a Y₂O₃ coating) is typically applied to protect them from corrosion. However, with evolving process requirements, the Y₂O₃ coating also needs improvement. Therefore, there is an urgent need in the industry to develop a high-performance corrosion-resistant coating on the surface of the component to resist plasma corrosion. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a method for forming a corrosion-resistant coating on the surface of a component body, a semiconductor component, and a plasma treatment apparatus, so as to improve the corrosion resistance of the corrosion-resistant coating to plasma.

[0006] To solve the above-mentioned technical problems, the present invention provides a method for forming a corrosion-resistant coating on the surface of a component body, comprising: providing a component body; placing the component body in an electrolytic cell for an electrochemical reaction, wherein the electrolyte in the electrolytic cell includes hydrogen ions and yttrium ions, forming a corrosion-resistant coating on the surface of the component body, wherein the corrosion-resistant coating includes a yttrium aluminum oxide coating; and performing a pore-sealing treatment on the yttrium aluminum oxide coating to form a crystalline yttrium aluminum oxide coating.

[0007] Optionally, the electrolyte includes an acid solution and a yttrium source solution.

[0008] Optionally, the acid solution includes at least one of oxalic acid, phosphoric acid, or sulfuric acid; the yttrium source solution includes at least one of yttrium nitrate, yttrium sulfate, or yttrium chloride.

[0009] Optionally, the electrolytic cell includes a cathode and an anode; the cathode is platinum, and the anode is aluminum; the electrochemical reaction occurring on the cathode surface is 2H₂O. + +2e - →H2, the chemical reaction occurring on the anode surface is: 4OH - +4e - →2H2O+O2; 2Al+3[O]→Al2O3+1675.7KJ, 5Al+3Y+12[O]+1675.7KJ→Y3Al5O 12 .

[0010] Optionally, the pH range of the electrolyte is 3 to 6.8; the mass fraction of the yttrium source in the electrolyte is 10 wt% to 50 wt%.

[0011] Optionally, the corrosion-resistant coating formed by the electrochemical reaction is in a weakly crystalline or amorphous state and contains nanoscale micropores.

[0012] Optionally, the sealing process is a high-temperature steam sealing process; the high-temperature steam sealing process includes high-temperature water steam.

[0013] Optionally, the process parameters of the high-temperature steam sealing process include: the set sealing temperature range is 120 degrees Celsius to 200 degrees Celsius, and the steam flow rate is 10 standard milliliters / minute to 50 standard milliliters / minute.

[0014] Optionally, the sealing treatment is an atomic layer deposition sealing process; the atomic layer deposition sealing process includes: water vapor and a yttrium-based metal-organic source; the yttrium-based metal-organic source includes: yttrium species of YK1K2K3, where K1, K2 and K3 are at least one of: halide, carbonyl, cyclopentadiene, acetamide, acetic acid, amidine salt or diazadiene.

[0015] Optionally, the process parameters of the atomic layer deposition sealing process include: a sealing temperature range of 120 degrees Celsius to 250 degrees Celsius, and a ratio of water vapor flow rate to yttrium-based metal organic source flow rate of 1:0.5 to 1:8.

[0016] Optionally, the thickness of the corrosion-resistant coating is 10 micrometers to 500 micrometers.

[0017] Accordingly, the present invention also provides a semiconductor component, comprising: a component body; and the aforementioned corrosion-resistant coating, located on the surface of the component body, wherein the corrosion-resistant coating comprises a yttrium aluminum oxide coating.

[0018] Optionally, the corrosion-resistant coating includes (420) crystal planes and (211), (321), (422), (521), (532) crystal planes.

[0019] Optionally, the ratio of the (420) crystal plane to other crystal planes is in the range of 1:0.01 to 1:0.1.

[0020] Accordingly, the present invention also provides a plasma processing apparatus, comprising: a reaction chamber for forming a plasma environment; and the aforementioned semiconductor component located within the reaction chamber and exposed to the plasma environment.

[0021] Optionally, the plasma environment contains at least one of fluorine, chlorine, oxygen, or hydrogen plasma.

[0022] Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

[0023] Optionally, when the plasma processing device is an inductively coupled plasma processing device, the components include at least one of the following: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, or a plasma confinement device.

[0024] Optionally, when the plasma treatment device is a capacitively coupled plasma treatment device, the components include at least one of the following: a spray head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, or a plasma confinement device.

[0025] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0026] The method for forming a corrosion-resistant coating on the surface of a component body provided by this invention first involves forming a yttrium aluminum oxide coating on the surface of the component body through an electrochemical reaction. At this stage, the yttrium aluminum oxide coating is in a weakly crystalline or amorphous state. Subsequently, a sealing process is performed to transform the weakly crystalline or amorphous yttrium aluminum oxide into a crystalline yttrium aluminum oxide. This crystalline yttrium aluminum oxide, as a corrosion-resistant coating, helps improve the component body's resistance to plasma bombardment and extends its service life. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention;

[0028] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention;

[0029] Figure 3 This is a process flow diagram of the present invention for forming a corrosion-resistant coating on the surface of a component body;

[0030] Figure 4 and Figure 5This is a schematic diagram of the steps involved in forming a corrosion-resistant coating on the surface of a component body according to the present invention.

[0031] Figure 6 This is a schematic diagram of another structure of the present invention for forming a corrosion-resistant coating on the surface of a component body;

[0032] Figure 7 The image shows the X-ray diffraction pattern of yttrium aluminum oxide formed by the method of this invention and other methods. Detailed Implementation

[0033] As described in the background section, the performance of yttrium oxide corrosion-resistant coatings needs further improvement. Therefore, this invention aims to provide a method for forming a corrosion-resistant coating on the surface of a component body. The formed corrosion-resistant coating is a crystalline yttrium aluminum oxide compound, which exhibits excellent corrosion resistance. This is described in detail below:

[0034] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention.

[0035] Please refer to Figure 1 The plasma reaction apparatus includes: a reaction chamber 100, which is a plasma environment. Semiconductor components and the internal wall of the reaction chamber 100 are exposed to the plasma environment. The plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma, or O-containing plasma.

[0036] The plasma reaction apparatus also includes a base 101, which supports the substrate W to be treated, and the plasma is used to treat the substrate W. Because plasma is highly corrosive, a corrosion-resistant coating needs to be applied to the surface of the semiconductor components to prevent corrosion.

[0037] In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: spray head 102, upper grounding ring 104, moving ring, gas distribution plate 105, gas buffer plate, electrostatic chuck assembly 103, lower grounding ring 106, covering ring 107, focusing ring 108, insulating ring, and plasma confinement device 109.

[0038] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention.

[0039] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: ceramic plate, inner liner 600, gas nozzle 601, gas distribution plate, gas pipe flange, electrostatic chuck assembly 602, cover ring 603, focusing ring 604, insulating ring, and plasma confinement device 605.

[0040] During plasma etching, both physical bombardment and chemical reactions affect all semiconductor components in contact with the plasma within the etching chamber, causing corrosion. Prolonged exposure to the plasma corrosion environment damages the surface structure, leading to the precipitation of bulk components, which detach from the surface and form tiny particles that contaminate the wafer. Advanced semiconductor manufacturing has stringent requirements for preventing microparticle contamination; for example, the number of particles larger than 45nm must be zero, and the contact area must be less than 10. Therefore, corrosion-resistant coatings must be applied to the surfaces of components within the plasma reactor to resist plasma corrosion.

[0041] In this embodiment, the corrosion-resistant coating includes a yttrium aluminum oxide coating. The yttrium aluminum oxide is crystalline, and the crystalline yttrium aluminum oxide coating has strong corrosion resistance. Therefore, it is beneficial to prevent the component body from being corroded by plasma and to improve its service life.

[0042] The following describes in detail the method for forming a corrosion-resistant coating on the surface of a component:

[0043] Figure 3 This is a process flow diagram of forming a corrosion-resistant coating on the surface of the component body according to the present invention.

[0044] Please refer to Figure 3 Step S1: Provide a component body; Step S2: Place the component body in an electrolytic cell for an electrochemical reaction, wherein the electrolyte in the electrolytic cell includes hydrogen ions and yttrium ions, and form a corrosion-resistant coating on the surface of the component body, wherein the corrosion-resistant coating includes a yttrium aluminum oxide coating; Step S3: Perform a pore-sealing treatment on the yttrium aluminum oxide coating to form a crystalline yttrium aluminum oxide coating.

[0045] The following is a detailed explanation:

[0046] Figure 4 and Figure 5 This is a schematic diagram of the structural steps of forming a corrosion-resistant coating on the surface of a component body according to the present invention.

[0047] Please refer to Figure 4The component body 20 is provided; the component body 20 is placed in an electrolytic cell for an electrochemical reaction, the electrolyte in the electrolytic cell includes hydrogen ions and yttrium ions, and a corrosion-resistant coating 21 is formed on the surface of the component body 20, the corrosion-resistant coating including a yttrium aluminum oxide coating.

[0048] The material of the component body 20 is one of Al, Al2O3, Si or SiC.

[0049] The electrolytic cell includes a cathode and an anode; the cathode is platinum, and the anode is aluminum. The electrolyte includes an acid solution and a yttrium source solution. The acid solution includes at least one of oxalic acid, phosphoric acid, or sulfuric acid. The yttrium source solution includes at least one of yttrium nitrate, yttrium sulfate, or yttrium chloride. The electrochemical reaction occurring on the cathode surface is 2H₂O. + +2e - →H2, the chemical reaction occurring on the anode surface is: 4OH - +4e - →2H2O+O2; 2Al+3[O]→Al2O3+1675.7KJ, 5Al+3Y+12[O]+1675.7KJ→Y3Al5O 12 .

[0050] The principle that yttrium aluminum oxide can be formed through electrochemical reaction includes: heat is released when Al reacts with [O], and the electrolyte contains yttrium, so the generated Al2O3 can further react with yttrium to form yttrium aluminum oxide.

[0051] In this embodiment, the pH range of the electrolyte is 3 to 6.8; the mass fraction of the yttrium source in the electrolyte is 10 wt% to 50 wt%. The significance of selecting the mass fraction of the yttrium source in the electrolyte is as follows: if the mass fraction of the yttrium source in the electrolyte is less than 10 wt%, the amount of yttrium aluminum oxide formed is less, resulting in weak protection of the corrosion-resistant coating for the component body; if the mass fraction of the yttrium source in the electrolyte is greater than 50 wt%, excessive yttrium source will mix in yttrium oxide during the formation of yttrium aluminum oxide. Since yttrium aluminum oxide and yttrium oxide have different crystal structures and cannot form a solid solution, excessive stress or even cracking of the corrosion-resistant coating is likely to occur during deposition. Therefore, the corrosion-resistant coating will not provide sufficient protection for the component body 20, and the plasma in the plasma treatment process can easily enter through the cracks in the corrosion-resistant coating and corrode the component body, leading to corrosion of the component body.

[0052] The yttrium aluminum oxide generated by the electrochemical reaction is in a weakly crystalline or amorphous state and contains nanoscale micropores, which makes its resistance to plasma corrosion insufficient. In order to improve the corrosion resistance, the yttrium aluminum oxide coating is subjected to a pore-sealing treatment to form a crystalline yttrium aluminum oxide coating.

[0053] Please refer to Figure 5 The yttrium aluminum oxide coating 21 is then sealed to form a crystalline yttrium aluminum oxide coating 22.

[0054] In this embodiment, the sealing process is a high-temperature steam sealing process; the high-temperature steam sealing process includes high-temperature steam. The process parameters of the high-temperature steam sealing process include: a set sealing temperature range of 120 degrees Celsius to 200 degrees Celsius, and a steam flow rate of 10 standard milliliters / minute to 50 standard milliliters / minute.

[0055] The principle of the high-temperature steam sealing includes: under high temperature conditions, yttrium oxide undergoes a hydration reaction with water, which causes the volume of aluminum oxide to expand. The thermal effect generated by this expansion further reacts with Y2O3 to form dense yttrium aluminum oxide.

[0056] The yttrium aluminum oxide coating 21 is sealed to form a crystalline yttrium aluminum oxide coating 22. The crystalline yttrium aluminum oxide coating 22 has more stable performance and stronger resistance to plasma corrosion. Therefore, the yttrium aluminum oxide coating 22 can resist the erosion of the component body 20 by plasma.

[0057] Figure 6 This is a schematic diagram of another structure of the present invention for forming a corrosion-resistant coating on the surface of the component body.

[0058] Please refer to Figure 6 The yttrium aluminum oxide coating 31 is then sealed to form a crystalline yttrium aluminum oxide coating 32.

[0059] Similar to the above embodiments, before the sealing process, the component body 30 is placed in an electrolytic cell for an electrochemical reaction. The electrolyte in the electrolytic cell includes hydrogen ions and yttrium ions, and a corrosion-resistant coating 31 is formed on the surface of the component body 30. The corrosion-resistant coating 31 includes a yttrium aluminum oxide coating.

[0060] In this embodiment, the sealing process is an atomic layer deposition (ALD) sealing process. The ALD sealing process includes water vapor and a yttrium-based metal-organic source. The yttrium-based metal-organic source includes yttrium species of YK1K2K3, wherein K1, K2, and K3 are independently selected from at least one of halides, carbonyl groups, cyclopentadiene, acetamide, acetic acid, amidinate, or diazadiene. The process parameters of the ALD sealing process include a sealing temperature range of 120°C to 250°C, and a water vapor flow rate to yttrium-based metal-organic source flow rate ratio of 1:0.5 to 1:8.

[0061] In this embodiment, the significance of selecting the ratio of water vapor flow rate to yttrium-based metal-organic source flow rate is as follows: if the ratio of water vapor flow rate to yttrium-based metal-organic source flow rate is less than 1:0.5, it will be difficult to form yttrium aluminum oxide compounds; if the ratio of water vapor flow rate to yttrium-based metal-organic source flow rate is greater than 1:8, the decomposition of yttrium-based metal-organic source is incomplete, which easily leads to carbon deposition.

[0062] The principle of atomic layer deposition sealing includes: under high temperature conditions, yttrium oxide undergoes a hydration reaction with water, and the high-temperature hydration reaction causes the volume of alumina to expand. During this process, the yttrium-based metal organic source undergoes hydrolysis to form yttrium oxide, and at the same time, yttrium oxide reacts further with alumina to generate crystalline yttrium aluminum oxide compound.

[0063] The crystalline yttrium aluminum oxide coating 22 has relatively stable performance and strong resistance to plasma corrosion. Therefore, the yttrium aluminum oxide coating 22 can resist the erosion of the component body 20 by plasma.

[0064] Accordingly, the present invention also provides a semiconductor component formed using the above method, please refer to... Figure 6 The semiconductor component includes: a component body 30; and a corrosion-resistant coating 32 located on the surface of the component body 30, wherein the corrosion-resistant coating 32 includes a yttrium aluminum oxide coating.

[0065] In the semiconductor component formed by the above method, the corrosion-resistant coating 32 includes a (420) crystal plane and (211), (321), (422), (521), and (532) crystal planes. In one embodiment, the ratio of the (420) crystal plane to the other crystal planes ranges from 1:0.01 to 1:0.1. Please refer to [reference needed]. Figure 7 , Figure 7 The X-ray diffraction patterns of yttrium aluminum oxide formed by the method of this invention and other methods are shown below. Figure 7In the figure, 1 represents the X-ray diffraction pattern of the yttrium aluminum oxide corrosion-resistant coating formed by the method of the present invention, and 2 represents the X-ray diffraction pattern of the yttrium aluminum oxide corrosion-resistant coating formed by other methods, including atomic layer deposition (ALD), chemical vapor deposition (CVD), or metal-organic chemical vapor deposition (MOCVD). As can be seen from the figure, the (420) crystal plane occupies the main part of the yttrium aluminum oxide corrosion-resistant coating 32 formed by the method of the present invention.

[0066] The advantage of having more (420) crystal planes in the corrosion-resistant coating 32 is that these crystal planes are close-packed yttrium aluminum oxide, which have the highest chemical stability and are more resistant to chemical corrosion. With the (420) crystal planes as the main component, the grain boundaries between the yttrium aluminum oxide corrosion-resistant coatings will be effectively reduced, resulting in fewer particles generated on the surface by chemical corrosion.

[0067] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method of forming a corrosion resistant coating on a surface of a part body, characterized by, The method comprises the following steps: providing a part body; The part body is placed in an electrolytic cell for electrochemical reaction, the electrolytic cell includes a cathode and an anode, an electrolyte in the electrolytic cell includes an acid solution and yttrium ions, the part body serves as the anode, the cathode is platinum, and the anode is aluminum, a corrosion-resistant coating is formed on the surface of the part body, the corrosion-resistant coating includes a yttrium aluminum oxide coating, the yttrium aluminum oxide coating is formed in one step by the electrochemical reaction, and the yttrium aluminum oxide coating includes: Y3Al5O 12 ​ performing a sealing treatment on the yttrium aluminum oxide compound coating to form a crystallized yttrium aluminum oxide compound coating, wherein the X-ray diffraction pattern of the crystallized yttrium aluminum oxide compound coating is mainly (420) crystal face.

2. The method of forming a corrosion resistant coating on a surface of a part body according to claim 1, wherein The electrolyte further comprises a yttrium source solution.

3. The method of forming a corrosion resistant coating on a surface of a part body according to claim 2, wherein The acid solution comprises at least one of oxalic acid, phosphoric acid or sulfuric acid; and the yttrium source solution comprises at least one of yttrium nitrate, yttrium sulfate or yttrium chloride.

4. The method of forming a corrosion resistant coating on a surface of a part body according to claim 2, wherein The electrochemical reaction occurring at the cathode surface is 2H + + 2e - → H2, and the chemical reaction occurring at the anode surface is 4OH - + 4e - → 2H2O + O2; 2Al + 3[O] → Al2O3 + 1675.7 KJ, 5Al + 3Y + 12[O] + 1675.7 KJ → Y3Al5O 12 .

5. The method of forming a corrosion resistant coating on a surface of a part body according to claim 2, wherein The pH value of the electrolyte ranges from 3 to 6.8; and the mass fraction of the yttrium source in the electrolyte ranges from 10 wt% to 50 wt%.

6. The method of forming a corrosion resistant coating on a surface of a part body according to claim 1, wherein The corrosion-resistant coating formed by the electrochemical reaction is in a weakly crystallized or amorphous state and contains nanoscale micropores.

7. The method of forming a corrosion resistant coating on a surface of a part body according to claim 1, wherein The sealing treatment is a high-temperature steam sealing process; and the high-temperature steam sealing process comprises high-temperature water vapor.

8. The method of forming a corrosion resistant coating on a surface of a part body according to claim 7, wherein The process parameters of the high-temperature steam sealing process include that the set sealing temperature ranges from 120 degrees Celsius to 200 degrees Celsius, and the water vapor flow rate ranges from 10 standard milliliters per minute to 50 standard milliliters per minute.

9. The method of forming a corrosion resistant coating on a surface of a part body according to claim 1, wherein The sealing treatment is an atomic layer deposition sealing process. The atomic layer deposition sealing process comprises water vapor and a yttrium-based metal organic source; the yttrium-based metal organic source comprises yttrium species of YK1K2K3, and K1, K2 and K3 are at least one of halide, carbonyl, cyclopentadiene, acetamide, acetic acid, amidogen or diazadiene.

10. The method of forming a corrosion resistant coating on a surface of a part body according to claim 9, wherein The process parameters of the atomic layer deposition sealing process include that the sealing temperature ranges from 120 degrees Celsius to 250 degrees Celsius, and the ratio of the water vapor flow rate to the yttrium-based metal organic source flow rate ranges from 1:0.5 to 1:

8.

11. The method of forming a corrosion resistant coating on a surface of a part body according to claim 1, wherein The thickness of the corrosion-resistant coating ranges from 10 micrometers to 500 micrometers.

12. A semiconductor component, characterized by The method comprises the following steps: providing a part body; The corrosion-resistant coating formed by the method of any one of claims 1 to 11 is located on the surface of the part body, and the corrosion-resistant coating comprises a crystallized yttrium aluminum oxide compound coating, wherein the X-ray diffraction pattern of the crystallized yttrium aluminum oxide compound coating is mainly (420) crystal face.

13. The semiconductor component according to claim 12, wherein The corrosion-resistant coating comprises (420) crystal face and (211), (321), (422), (521) and (532) crystal faces.

14. The semiconductor component according to claim 13, wherein The ratio of the (420) crystal face to other crystal faces ranges from 1:0.01 to 1:0.

1.

15. A plasma processing apparatus, characterized by comprising: The method comprises the following steps: providing a reaction cavity for forming a plasma environment in the reaction cavity; The semiconductor part of any one of claims 12 to 14 is located in the reaction cavity and exposed to the plasma environment.

16. The plasma processing apparatus of claim 15, wherein, The plasma environment comprises at least one of fluorine, chlorine, oxygen or hydrogen plasma.

17. The plasma processing apparatus of claim 15, wherein the first and second electrodes are disposed in a parallel relationship. The plasma processing device is a plasma etching device or a plasma cleaning device.

18. The plasma processing apparatus of claim 17, wherein, When the plasma processing device is an inductively coupled plasma processing device, the part comprises at least one of a ceramic plate, an inner bushing, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring or a plasma confinement device.

19. The plasma treatment apparatus as described in claim 17, characterized in that, When the plasma processing device is a capacitively coupled plasma processing device, the zero parts include at least one of a showerhead, an upper ground ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.

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