Integrated circuit components and their packaging components

Abstract

This application discloses an integrated circuit assembly and a packaging assembly. The integrated circuit assembly includes: a semiconductor chip, a first insulating layer, and a plurality of first to third metal electrodes. The first insulating layer is located on a first surface of the semiconductor chip, and the first metal electrodes are located on the surface of the first insulating layer. Each first metal electrode is electrically connected to an electrode of an electronic device in the semiconductor chip. A second metal electrode is located above the first metal electrode and is electrically connected to the first metal electrode. A third metal electrode is located above the second metal electrode and is electrically connected to the second metal electrode. Each second metal electrode has a comb-like structure extending along a first direction. The second metal electrodes are used to improve the current capability of the integrated circuit assembly when the maximum current that can flow through the first metal electrode and the third metal electrode is less than the current required by the electronic device in the semiconductor chip, thereby improving the electrical performance of the integrated circuit assembly.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and more specifically to an integrated circuit component and its packaging component. Background Technology

[0002] Power transistors are widely used in various power management systems and are an important component of power and system monitoring products.

[0003] Figure 1 A circuit diagram of a traditional switching regulator is shown. (Example) Figure 1 As shown, the switching regulator 100 includes a control stage and a power stage. The control stage includes a control chip U1, and the power stage includes power transistors Q1 and Q2. The power transistors are, for example, field-effect transistors (FETs) or bipolar transistors (BPTs). Power transistors Q1 and Q2 are connected in series between the input voltage Vin and ground GND, with their intermediate node serving as the output terminal Lx. The input and output electrodes of the control chip U1 are connected to I / O ports, and its drive electrodes are connected to the gate electrodes of the power transistors Q1 and Q2, respectively, to control the on and off states of the power transistors Q1 and Q2, thereby generating an output current.

[0004] To meet the requirements of low control voltage and high output current for switching regulators, existing technologies generally require increasing the metal area on power transistors Q1 and Q2 to increase the maximum output current. However, this means that the chip area will become larger, which does not meet the miniaturization requirements of switching regulators.

[0005] Therefore, further improvements are needed to the integrated circuit components of existing switching regulators to simultaneously meet the requirements for miniaturization and high output current of switching regulators. Summary of the Invention

[0006] In view of this, the object of the present invention is to provide an integrated circuit component and its packaging component to simultaneously address the requirements of chip miniaturization and high output current.

[0007] According to one aspect of the present invention, an integrated circuit assembly is provided, comprising: a semiconductor chip having a first surface and a second surface opposite to the first surface; a first insulating layer located on the first surface of the semiconductor chip; a plurality of first metal electrodes located on the surface of the first insulating layer, each first metal electrode being electrically connected to an electrode of an electronic device in the semiconductor chip; at least one second metal electrode located above the first metal electrodes and electrically connected to the plurality of first metal electrodes; and a plurality of third metal electrodes located above the at least one second metal electrode and electrically connected to the second metal electrodes, wherein each second metal electrode has a comb-like structure extending along a first direction.

[0008] Optionally, each of the second metal electrodes includes a body structure extending along the first direction and a finger structure extending along the second direction, and the first direction and the second direction intersect.

[0009] Optionally, the first direction is perpendicular to the second direction.

[0010] Optionally, each of the first metal electrodes is a strip-shaped structure extending along the second direction, and each of the third metal electrodes is a strip-shaped structure extending along the first direction.

[0011] Optionally, the integrated circuit assembly further includes: a plurality of first conductive channels, each of the first conductive channels passing through the first insulating layer, to electrically connect the first metal electrode to an electrode of an electronic device in the semiconductor chip, respectively.

[0012] Optionally, the integrated circuit assembly further includes: a second insulating layer located between the plurality of first metal electrodes and the at least one second metal electrode; and a plurality of second conductive channels passing through the second insulating layer to electrically connect at least a portion of the first metal electrodes and the second metal electrodes to each other.

[0013] Optionally, the integrated circuit assembly further includes: a third insulating layer located between the at least one second metal electrode and the plurality of third metal electrodes; and a plurality of third conductive channels passing through the third insulating layer to electrically connect at least a portion of the third metal electrodes to the second metal electrodes, respectively.

[0014] Optionally, there are two third metal electrodes, wherein a first potential is supplied to one of the plurality of third metal electrodes, and a second potential different from the first potential is supplied to the other of the plurality of third metal electrodes.

[0015] According to another aspect of the present invention, a packaging assembly is provided, comprising: the aforementioned integrated circuit assembly; a lead frame including a plurality of pins, the integrated circuit assembly being mounted on the lead frame; and a packaging material covering the integrated circuit assembly and covering at least a portion of the lead frame, such that a portion of each of the plurality of pins is exposed for external electrical connection.

[0016] The integrated circuit assembly of this invention includes first to third metal electrodes, and a second metal electrode in the form of a comb-like structure extending in a certain direction. The second metal electrode is used to improve the current capability of the integrated circuit assembly when the maximum current value that can flow through the first and third metal electrodes is less than the current required by the electronic devices in the semiconductor chip. Thus, the electrical performance of the integrated circuit assembly can be improved without increasing the linewidth of the first and third metal electrodes, while solving the requirements of chip miniaturization and large output current.

[0017] Furthermore, the linewidth ratio of the main structure and the finger structure of the second metal electrode can be calculated and adjusted based on the current capability per unit area of ​​the metal and the principle that the current density gradually decreases from the current start to the current end when the current flows through multiple power devices in the semiconductor chip, so as to uniformly improve the current capability of the entire device. Attached Figure Description

[0018] The above and other objects, features and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings.

[0019] Figure 1 A circuit diagram of a traditional switching regulator is shown;

[0020] Figure 2 An exploded perspective view of an integrated circuit assembly 200 applied to a switching regulator according to a first embodiment of the present invention is shown;

[0021] Figure 3a and Figure 3b Cross-sectional views of an integrated circuit assembly 200 applied to a switching regulator according to a first embodiment of the present invention are shown along the AA direction and along the BB direction, respectively.

[0022] Figure 4 An exploded perspective view of an integrated circuit component 300 applied to a switching regulator according to a second embodiment of the present invention is shown. Detailed Implementation

[0023] The invention will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by similar reference numerals.

[0024] For clarity, the various parts in the accompanying drawings are not drawn to scale. Furthermore, certain well-known components may not be shown in the drawings; for example, in some cases, solder, encapsulation material, support material for the lead frame, and / or the external frame are not shown.

[0025] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0026] Many specific details of the invention, such as the structure, materials, dimensions, processing techniques, and methods of integrated circuit components, are described below to provide a clearer understanding of the invention. However, as those skilled in the art will understand, the invention may be implemented without following these specific details.

[0027] Figure 2 An exploded perspective view of an integrated circuit assembly 200 applied to a switching regulator according to a first embodiment of the present invention is shown. Figure 3a and Figure 3b Cross-sectional views of the integrated circuit assembly 200 applied to a switching regulator according to the first embodiment of the present invention are shown along the AA direction and along the BB direction, respectively.

[0028] The integrated circuit assembly 200 includes a semiconductor chip 210. At least two power transistors and / or an optional control chip are formed in the semiconductor chip 210. Each power transistor includes a first electrode and a second electrode exposed on a first surface of the semiconductor chip 210, and a control electrode located on the first surface or on a second surface opposite to the first surface. In each power transistor, the first electrode, the second electrode, and the control electrode are electrically isolated from each other.

[0029] Power transistors are, for example, selected from bipolar transistors and field-effect transistors. In the case of a bipolar transistor, the first electrode of the power transistor is one of the emitter and collector, the second electrode is the other of the emitter and collector, and the control electrode is the base. In the case of a field-effect transistor, the first electrode of the power transistor is one of the source and drain, the second electrode is the other of the source and drain, and the control electrode is the gate.

[0030] In this embodiment, the integrated circuit component 200 includes five power transistors. In an alternative embodiment, the integrated circuit component 200 may include multiple power transistor groups, and each power transistor group may include more power transistors. Figure 3a and Figure 3bAs shown, five power transistors in integrated circuit component 200 are arranged in a row, with adjacent power transistors sharing a single electrode. For example, power transistor 211 includes a first electrode 211-a and a second electrode 211-b, and power transistor 212 includes a first electrode 212-a and a second electrode 211-b. Power transistors 211 and 212 share the second electrode 211-b.

[0031] It should be noted that the structure of the semiconductor chip 210 in this embodiment is only an example. Those skilled in the art can choose other semiconductor chip structures according to specific circumstances, and the present invention does not limit this.

[0032] The integrated circuit assembly 200 also includes a first insulating layer 221 and a plurality of first metal electrodes (e.g., first metal electrodes 231-a to 231-c, etc.). The first insulating layer 221 is composed, for example, silicon oxide and is located on the surface of the semiconductor chip 210. The plurality of first metal electrodes are composed, for example, aluminum or copper. The plurality of first metal electrodes are arranged in a strip-like structure extending in a certain direction on the first insulating layer 221 and are parallel to each other. Each first metal electrode is electrically connected to an electrode of a power device in the semiconductor chip 210. Further, the integrated circuit assembly 200 also includes a plurality of first conductive channels 251, each first conductive channel 251 passing through the first insulating layer 221 to electrically connect the first metal electrodes to an electrode of a corresponding power device in the semiconductor chip 210, respectively.

[0033] The integrated circuit assembly 200 also includes a second insulating layer 222 and second metal electrodes 232 for electrically connecting a plurality of first metal electrodes. The second insulating layer 222 is composed, for example, silicon oxide and is located on the surface of the plurality of first metal electrodes. The second metal electrodes 232 are composed, for example, aluminum or copper. The second metal electrodes 232 have a comb-like structure extending in a certain direction on the second insulating layer 222.

[0034] Furthermore, the second metal electrode 232 includes a main body structure 241 extending along a first direction and a finger-like structure 242 extending along a second direction, and the first direction and the second direction intersect, for example, the first direction and the second direction are perpendicular to each other. The plurality of first metal electrodes are in the form of strip-like structures extending along the second direction, and a portion of the plurality of first metal electrodes is electrically connected to the second metal electrode 232.

[0035] like Figure 3a and 3bAs shown, the first metal electrodes 231-a, 231-b, and 231-c of the plurality of first metal electrodes are electrically connected to the second metal electrode. Furthermore, the integrated circuit assembly 200 also includes a plurality of second conductive channels 252 that pass through the second insulating layer 222 to electrically connect the first metal electrodes 231-a, 231-b, and 231-c to the main structure 241 and the corresponding finger structure 242 of the second metal electrode 232, respectively.

[0036] It should be noted that in other embodiments, other metal electrodes among the plurality of first metal electrodes besides the first metal electrodes 231-a, 231-b and 231-c may be electrically connected to the second metal electrode, and the present invention does not limit this.

[0037] The integrated circuit assembly 200 also includes a third insulating layer 223 and a plurality of third metal electrodes 233 for providing external electrical connections. The third insulating layer 223 is composed, for example, silicon oxide and is located on the surface of the second metal electrode 232. The plurality of third metal electrodes are composed, for example, aluminum or copper.

[0038] To provide external electrical connection, multiple third metal electrodes can be connected to the lead frame via conductive bumps and / or solder balls. For example, in a switching regulator, there are two third metal electrodes: one third metal electrode 233-a is connected to the voltage signal terminal Vin, and the other third metal electrode 233-b is connected to the output terminal Lx.

[0039] The third metal electrodes 233-a and 233-b are respectively arranged in strip-like structures extending in a certain direction on the third insulating layer 223 and are parallel to each other. Further, the third metal electrodes 233-a and 233-b are arranged in strip-like structures extending in a first direction on the third insulating layer 223.

[0040] Furthermore, one of the third metal electrodes 233-a and 233-b is electrically connected to the main structure 241 of the second metal electrode 232. For example... Figure 3a and Figure 3b As shown, the third metal electrode 233-a is electrically connected to the second metal electrode 232. Furthermore, the integrated circuit assembly 200 also includes a plurality of third conductive channels 253 that pass through the third insulating layer 223 to electrically connect the main structure 241 of the third metal electrode 233-a and the second metal electrode 232, as well as the corresponding finger structures 242, to each other. (Refer to the following...) Figure 3a and Figure 3b The integrated circuit component 200 of the present invention will be described in detail.

[0041] Assuming the semiconductor chip 210 includes m power devices (m is an integer greater than or equal to 1), when a current of nA flows into the m power devices from left to right as shown in the figure, each power device requires (n / m)A of current. Based on the current capacity per unit area of ​​metal and the principle that the current density gradually decreases from the beginning to the end when current flows through multiple power devices in the semiconductor chip 210, the maximum current value that can flow is first determined based on the width of the main structure 241 of the third metal electrode 233-a and the second metal electrode 232. Then, the maximum current value that can flow through each first metal electrode is determined based on the linewidth of the first metal electrode. The portion of the maximum current value that can flow through the first metal electrode that is less than (n / m)A requires the second metal electrode 232 to increase the current capacity of the integrated circuit component. Therefore, by calculating and adjusting the linewidth ratio of the main structure 241 and the finger structure 242 of the second metal electrode 232, the current capacity of the entire device can be uniformly improved.

[0042] Figure 4 An exploded perspective view of an integrated circuit component 300 applied to a switching regulator according to a second embodiment of the present invention is shown.

[0043] like Figure 4 As shown, the integrated circuit assembly 300 includes a semiconductor chip 310. At least two power transistors and / or an optional control chip are formed in the semiconductor chip 310. Each power transistor includes a first electrode and a second electrode exposed on a first surface of the semiconductor chip 310, and a control electrode located on the first surface or on a second surface opposite to the first surface. In each power transistor, the first electrode, the second electrode, and the control electrode are electrically isolated from each other.

[0044] Power transistors are, for example, selected from bipolar transistors and field-effect transistors. In the case of a bipolar transistor, the first electrode of the power transistor is one of the emitter and collector, the second electrode is the other of the emitter and collector, and the control electrode is the base. In the case of a field-effect transistor, the first electrode of the power transistor is one of the source and drain, the second electrode is the other of the source and drain, and the control electrode is the gate.

[0045] In this embodiment, the integrated circuit component 300 includes five power transistors. In an alternative embodiment, the integrated circuit component 300 may include multiple power transistor groups, and each power transistor group may include more power transistors.

[0046] The integrated circuit assembly 300 also includes a first insulating layer 321 and a plurality of first metal electrodes (e.g., first metal electrodes 331-a to 331-f). The first insulating layer 321, for example, is composed of silicon oxide and is located on the surface of the semiconductor chip 310. The plurality of first metal electrodes are, for example, composed of aluminum or copper. The plurality of first metal electrodes are arranged in a strip-like structure extending in a certain direction on the first insulating layer 321 and are parallel to each other. Each first metal electrode is electrically connected to an electrode of a power device in the semiconductor chip 310. Similar to the first embodiment, the integrated circuit assembly 300 also includes a plurality of first conductive channels (not shown in the figure), each first conductive channel passing through the first insulating layer 321 to electrically connect the first metal electrodes to an electrode of a corresponding power device in the semiconductor chip 310.

[0047] The integrated circuit assembly 300 also includes a second insulating layer 322 and a plurality of second metal electrodes for electrically connecting a plurality of first metal electrodes (e.g., Figure 4 The second metal electrodes 332-a and 332-b are, for example, composed of silicon oxide and located on the surface of the first metal electrode 331. The second metal electrodes 332-a and 332-b are, for example, composed of aluminum or copper. Each second metal electrode has a comb-like structure extending in a certain direction on the second insulating layer 322.

[0048] Furthermore, each second metal electrode includes a main body structure 341 extending along a first direction and a finger-like structure 342 extending along a second direction, and the first and second directions intersect, for example, the first and second directions are perpendicular to each other. The plurality of first metal electrodes 331-a to 331-f are strip-like structures extending along the second direction, and the plurality of first metal electrodes 331-a to 331-f are electrically connected to the second metal electrode 332-a or 332-b, respectively. For example, first metal electrodes 331-a, 331-c, and 331-e are electrically connected to the second metal electrode 332-b, and first metal electrodes 331-b, 331-d, and 331-f are electrically connected to the second metal electrode 332-a.

[0049] Similarly, the integrated circuit component 300 also includes a plurality of second conductive channels (not shown in the figure), each second conductive channel passing through the second insulating layer 322 to electrically connect the corresponding first metal electrode and the corresponding second metal electrode to each other.

[0050] The integrated circuit assembly 300 also includes a third insulating layer 323 and a plurality of third metal electrodes (e.g., third metal electrodes 333-a and 333-b) for providing external electrical connections. The third insulating layer 323, for example, is composed of silicon oxide and is located on the surface of the plurality of second metal electrodes. The plurality of third metal electrodes are, for example, composed of aluminum or copper.

[0051] To provide external electrical connection, multiple third metal electrodes can be connected to the lead frame via conductive bumps and / or solder balls. For example, in a switching regulator, there are two third metal electrodes: third metal electrode 333-a is connected to the voltage signal terminal Vin, and third metal electrode 333-b is connected to the output terminal Lx.

[0052] Multiple third metal electrodes are arranged in strip-like structures extending along a certain direction and parallel to each other on the third insulating layer 323. Further, multiple third metal electrodes are arranged in strip-like structures extending along a first direction on the third insulating layer 323.

[0053] Furthermore, multiple third metal electrodes are electrically connected to corresponding second metal electrodes. For example, third metal electrode 333-a is electrically connected to second metal electrode 332-a, and third metal electrode 333-b is electrically connected to second metal electrode 332-b. Similarly, the integrated circuit assembly 300 also includes multiple third conductive channels (not shown in the figure), each third conductive channel passing through the third insulating layer 323 to electrically connect corresponding third metal electrodes to the second metal electrodes.

[0054] In a further embodiment, the present invention also provides a packaging assembly comprising the integrated circuit assembly, lead frame, and encapsulating material described in the above embodiments. As described above, the integrated circuit assembly includes a semiconductor chip, a plurality of first metal electrodes, at least one second metal electrode, a plurality of third metal electrodes, and a first insulating layer to a third insulating layer. Each first metal electrode electrically connects an electrode of a power device in the semiconductor chip to a second metal electrode, the second metal electrode is electrically connected to a third metal electrode, and the third metal electrode is used for electrical connection to an external signal terminal. Further, the integrated circuit assembly also includes a plurality of conductive bumps and / or solder balls, and each third metal electrode is interconnected with at least one conductive bump. The integrated circuit assembly also includes a control chip (not shown) formed together with the power device in the semiconductor chip, the input and output electrodes of the control chip being interconnected with the conductive bumps or the gate of the integrated circuit assembly, respectively.

[0055] The integrated circuit assembly is mounted on a leadframe. For example, conductive bumps of the integrated circuit assembly form solder interconnects with the upper surface of the leadframe pins. A portion of the pins on the leadframe provide voltage signal terminals Vin, another portion provides switching signal terminals LX, and a third portion provides ground terminals GND. The package covers the integrated circuit assembly and also covers at least a portion of the leadframe.

[0056] In the above embodiments, an integrated circuit assembly including a power device and a packaging assembly are described. In alternative embodiments, at least one electronic device selected from diodes, transistors, resistors, and inductors may be used instead of the power device.

[0057] In summary, the integrated circuit component of the present invention includes first to third metal electrodes, and a second metal electrode has a comb-like structure extending in a certain direction. The second metal electrode is used to improve the current capability of the integrated circuit component when the maximum current value that can flow through the first and third metal electrodes is less than the current required by the electronic devices in the semiconductor chip. Thus, the electrical performance of the integrated circuit component can be improved without increasing the linewidth of the first and third metal electrodes, while solving the requirements of chip miniaturization and high output current.

[0058] Furthermore, the linewidth ratio of the main structure and the finger structure of the second metal electrode can be calculated and adjusted based on the current capability per unit area of ​​the metal and the principle that the current density gradually decreases from the current start to the current end when the current flows through multiple power devices in the semiconductor chip, so as to uniformly improve the current capability of the entire device.

[0059] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0060] As described above, these embodiments of the present invention do not exhaustively cover all details, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to effectively utilize the invention and its modifications. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. An integrated circuit component, comprising: A semiconductor chip having a first surface and a second surface opposite to the first surface; A first insulating layer is located on the first surface of the semiconductor chip; Multiple first metal electrodes are located on the surface of the first insulating layer, and each first metal electrode is electrically connected to an electrode of an electronic device in the semiconductor chip. At least one second metal electrode is located above the first metal electrode and is electrically connected to the plurality of first metal electrodes; as well as A plurality of third metal electrodes are located above the at least one second metal electrode and are electrically connected to the second metal electrode. Each of the second metal electrodes has a comb-like structure extending along a first direction. The comb-like structure includes a main structure extending along the first direction and finger-like structures extending along a second direction, wherein the first direction intersects the second direction.

2. The integrated circuit assembly according to claim 1, wherein, The first direction is perpendicular to the second direction.

3. The integrated circuit assembly according to claim 2, wherein, Each of the first metal electrodes is a strip-shaped structure extending along the second direction, and each of the third metal electrodes is a strip-shaped structure extending along the first direction.

4. The integrated circuit assembly according to claim 1, further comprising: Multiple first conductive channels, each of which passes through the first insulating layer, are provided to electrically connect the first metal electrode to an electrode of an electronic device in the semiconductor chip, respectively.

5. The integrated circuit assembly according to claim 1, further comprising: A second insulating layer is located between the plurality of first metal electrodes and the at least one second metal electrode; as well as A plurality of second conductive channels passing through the second insulating layer to electrically connect at least a portion of the first metal electrode and the second metal electrode to each other.

6. The integrated circuit assembly according to claim 1, further comprising: A third insulating layer is located between the at least one second metal electrode and the plurality of third metal electrodes; as well as A plurality of third conductive channels passing through the third insulating layer to electrically connect at least a portion of the third metal electrode to the second metal electrode.

7. The integrated circuit assembly according to claim 1, wherein, The number of the third metal electrodes is two. Specifically, a first potential is supplied to one of the plurality of third metal electrodes, and a second potential different from the first potential is supplied to the other of the plurality of third metal electrodes.

8. An encapsulation component, comprising: The integrated circuit assembly according to any one of claims 1-7; A lead frame including multiple pins, wherein the integrated circuit assembly is mounted on the lead frame; as well as The encapsulation material covers the integrated circuit assembly and at least a portion of the lead frame, such that a portion of each of the plurality of pins is exposed for external electrical connection.

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