Magnetic storage unit and in-memory computing method for magnetic storage unit

Abstract

The present invention provides a magnetic storage unit and an in-memory computing method. The magnetic storage unit includes: a spin-orbit torque providing layer and a magnetic tunnel junction above it, a magnetic bias layer on the same side or a different side of the magnetic tunnel junction, an oxide layer and a top electrode above the magnetic tunnel junction, and four terminals for providing write signals. The first terminal is connected to one end of the spin-orbit torque providing layer and configured to apply a first write signal, the second terminal is connected to the other end of the spin-orbit torque providing layer and configured to apply a second write signal, the third terminal is connected to the top electrode and configured to apply a third write signal, and the fourth terminal is connected to the bottom end of the spin-orbit torque providing layer and configured to be grounded after connecting to a switching device. The magnetic storage unit of the present invention can achieve in-memory computing.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic memories, and particularly to a magnetic storage cell and an in-memory computing method for a magnetic storage cell. Background Art

[0002] Spin-orbit torque magnetic random access memory (SOT-MRAM) is one of the promising non-volatile memory devices in the future because of its high write speed and low power consumption.

[0003] Currently, SOT-MRAM is still mainly used for storing data in applications, and the corresponding in-memory computing technology is not yet mature. However, due to the fast in-memory computing speed and low power consumption, it is necessary to propose a magnetic storage cell that can implement in-memory computing. Summary of the Invention

[0004] To solve the above problems, the present invention provides a magnetic storage cell and an in-memory computing method for the magnetic storage cell, which can implement in-memory computing.

[0005] In a first aspect, the present invention provides a magnetic storage cell, comprising:

[0006] A spin-orbit torque providing layer and a magnetic tunnel junction above it;

[0007] A magnetic bias layer located above the magnetic tunnel junction;

[0008] An oxide layer located above the magnetic bias layer;

[0009] A top electrode located above the oxide layer;

[0010] A first terminal connected to one end of the spin-orbit torque providing layer, and the first terminal is configured to apply a first write signal;

[0011] A second terminal connected to the other end of the spin-orbit torque providing layer, and the second terminal is configured to apply a second write signal;

[0012] A third terminal connected to the top electrode, and the third terminal is configured to apply a third write signal;

[0013] A fourth terminal connected to the bottom end of the spin-orbit torque providing layer, and the fourth terminal is configured to be grounded after connecting a switching device;

[0014] Wherein, the first terminal, the second terminal, and the third terminal all have logical values, and the state of the switching device connected to the fourth terminal is related to the logical values of the first terminal and the second terminal.

[0015] Optionally, the logical value of the first terminal is denoted as A. When the first write signal applied to the first terminal is V0, A = 0; when the first write signal applied to the first terminal is V0+ΔV, A = 1, where V0≥0 and ΔV>0;

[0016] The logical value of the second terminal is denoted as B. When the second write signal applied to the second terminal is V0, B = 0; when the second write signal applied to the second terminal is V0+ΔV, B = 1, where V0≥0 and ΔV>0;

[0017] The logical value of the third terminal is denoted as C. When the third write signal applied to the third terminal is -V3, C = 0; when the third write signal applied to the third terminal is V3, C = 1, where V3>0;

[0018] Moreover, when A≠B, the switching device connected to the fourth terminal is turned off; when A = B, the switching device connected to the fourth terminal is turned on.

[0019] Optionally, the magnetic tunnel junction includes:

[0020] A free layer, close to the spin-orbit torque providing layer;

[0021] A barrier layer, located above the free layer;

[0022] A reference layer, located above the barrier layer.

[0023] Optionally, the barrier layer includes one of GdO x , MgO, and MgAl2O4.

[0024] Optionally, the oxide layer includes one of Al2O3 and MgO.

[0025] In a second aspect, the present invention provides a magnetic storage unit, including:

[0026] A spin-orbit torque providing layer and a magnetic tunnel junction above it;

[0027] A magnetic bias layer, located below the spin-orbit torque providing layer;

[0028] An oxide layer, located above the magnetic tunnel junction;

[0029] A top electrode, located above the oxide layer;

[0030] A first terminal, connected to one end of the spin-orbit torque providing layer, and the first terminal is configured to apply a first write signal;

[0031] A second terminal, connected to the other end of the spin-orbit torque providing layer, and the second terminal is configured to apply a second write signal;

[0032] A third terminal, connected to the top electrode, the third terminal being configured to apply a third write signal;

[0033] A fourth terminal, connected to the bottom end of the magnetic bias layer, the fourth terminal being configured to be grounded after connecting to a switching device;

[0034] Wherein, the first terminal, the second terminal, and the third terminal all have logical values, and the state of the switching device connected to the fourth terminal is related to the logical values of the first terminal and the second terminal.

[0035] Optionally, the logical value of the first terminal is denoted as A. When the first write signal applied to the first terminal is V0, A = 0; when the first write signal applied to the first terminal is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0;

[0036] The logical value of the second terminal is denoted as B. When the second write signal applied to the second terminal is V0, B = 0; when the second write signal applied to the second terminal is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0;

[0037] The logical value of the third terminal is denoted as C. When the third write signal applied to the third terminal is -V3, C = 0; when the third write signal applied to the third terminal is V3, C = 1, where V3 > 0;

[0038] And, when A ≠ B, the switching device connected to the fourth terminal is turned off; when A = B, the switching device connected to the fourth terminal is turned on.

[0039] Optionally, the magnetic tunnel junction includes:

[0040] A free layer, close to the spin-orbit torque providing layer;

[0041] A barrier layer, located above the free layer;

[0042] A reference layer, located above the barrier layer.

[0043] Optionally, the barrier layer includes one of GdO x , MgO, and MgAl2O4.

[0044] Optionally, the oxide layer includes one of Al2O3 and MgO.

[0045] In a third aspect, the present invention provides a method for in-memory computing of a magnetic storage unit, implemented by using the magnetic storage unit provided in the first aspect or the second aspect. The method includes:

[0046] Read the data currently stored in the storage unit;

[0047] Control the write signals applied to the first terminal, the second terminal, and the third terminal, as well as the state of the switching device connected to the fourth terminal, so that through logical calculation between the data currently stored in the storage unit and the logical values of the first terminal, the second terminal, and the third terminal, the data to be stored in the storage unit next is obtained.

[0048] Optionally, the logical value of the first terminal is denoted as A. When the first write signal applied to the first terminal is V0, A = 0; when the first write signal applied to the first terminal is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0;

[0049] The logical value of the second terminal is denoted as B. When the second write signal applied to the second terminal is V0, B = 0; when the second write signal applied to the second terminal is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0;

[0050] The logical value of the third terminal is denoted as C. When the third write signal applied to the third terminal is -V3, C = 0; when the third write signal applied to the third terminal is V3, C = 1, where V3 > 0;

[0051] Moreover, when A ≠ B, the switching device connected to the fourth terminal is turned off; when A = B, the switching device connected to the fourth terminal is turned on.

[0052] Optionally, the data currently stored in the storage unit is denoted as X i , and the data to be stored in the storage unit next is denoted as X i+1 , X i and X i+1 represent the resistance state of the storage unit.

[0053] The magnetic storage unit provided by the present invention can not only store data, but also realize in-memory computing based on the combined action of the principles of spin-orbit torque and electric field regulation, reducing the cost and complexity of the chip. The in-memory computing method of the magnetic storage unit provided by the present invention does not require data migration, can realize various logical operations, can improve the computing speed, and reduce the device power consumption. Description of the Drawings

[0054] Figure 1 is a schematic structural diagram of a magnetic storage unit provided by an embodiment of the present invention;

[0055] Figure 2 is a schematic structural diagram of a magnetic storage unit provided by an embodiment of the present invention;

[0056] Figure 3 is a schematic diagram of the current and voltage regulation of the magnetic moment reversal loop. Detailed implementation manners

[0057] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0058] The following will describe in detail some implementation manners of the present invention with reference to the accompanying drawings. Without conflict, the embodiments described below and the features in the embodiments may be combined with each other.

[0059] Embodiment 1

[0060] The embodiment of the present invention provides a magnetic storage unit. As Figure 1 shown, the magnetic storage unit includes: a spin-orbit torque providing layer 101 and a magnetic tunnel junction (MTJ) above it. The magnetic tunnel junction at least includes a free layer 102, a barrier layer 103, and a reference layer 104 stacked in sequence from bottom to top. The thickness of the barrier layer 103 is relatively large, which is beneficial to electric field regulation. A magnetic bias layer 106 is disposed above the reference layer 104, a spacer layer 105 is disposed between the magnetic bias layer 106 and the reference layer 104, an oxide layer 107 is disposed above the magnetic bias layer 106, and a top electrode 108 is disposed above the oxide layer 107. In addition, the magnetic storage unit further includes four terminals. A first terminal 11 is connected to one end of the spin-orbit torque providing layer 101, and the first terminal 11 is configured to apply a first write signal. A second terminal 12 is connected to the other end of the spin-orbit torque providing layer 101, and the second terminal 12 is configured to apply a second write signal. A third terminal 13 is connected to the top electrode 108, and the third terminal 13 is configured to apply a third write signal. A fourth terminal 14 is connected to the bottom end of the spin-orbit torque providing layer 101, and the fourth terminal 14 is configured to be grounded after connecting to a switching device. Among them, the first terminal 11, the second terminal 12, and the third terminal 13 all have logic values, and the state of the switching device connected to the fourth terminal 14 is related to the logic values of the first terminal and the second terminal.

[0061] In this embodiment, the magnetic moment flipping regulation of the terminals 11 and 12 is realized by the current generated by applying a voltage. Since the oxide layer 107 has a high resistance and makes it difficult for the current to pass through, the terminal 13 is mainly used for voltage regulation. The terminal 14 functions as a switch. The function of the magnetic bias layer 106 is to generate a stray field, which can realize the flipping of the free layer without an external magnetic field, and jointly determine the rotation direction of the hysteresis loop with the positive and negative of the voltage of the terminal 13.

[0062] As an implementation manner, the magnetization directions of the magnetic tunnel junction free layer 102 and the reference layer 104 are perpendicular to the film surface, and the magnetic bias layer 106 is magnetized in the plane. The barrier layer 103 can be selected from GdO x , MgO, and MgAl2O4, and the thickness of the barrier layer 103 is greater than or equal to 1.2 nm. The oxide layer 107 is required to have a high resistance and can be selected from Al2O3 and MgO.

[0063] Example Two

[0064] On the other hand, an embodiment of the present invention provides a magnetic storage unit. As Figure 2 shown, the magnetic storage unit includes: a spin-orbit torque providing layer 201 and a magnetic tunnel junction (MTJ) above it. The magnetic tunnel junction at least includes a free layer 202, a barrier layer 203, and a reference layer 204 stacked in sequence from bottom to top. A magnetic bias layer 206 is disposed below the spin-orbit torque providing layer 201, an oxide layer 207 is disposed above the reference layer 204, and a top electrode 208 is disposed above the oxide layer 207. In addition, the magnetic storage unit further includes four terminals. The first terminal 21 is connected to one end of the spin-orbit torque providing layer 201, and the first terminal 21 is configured to apply a first write signal. The second terminal 22 is connected to the other end of the spin-orbit torque providing layer 201, and the second terminal 22 is configured to apply a second write signal. The third terminal 23 is connected to the top electrode 208, and the third terminal 23 is configured to apply a third write signal. The fourth terminal 24 is connected to the bottom end of the magnetic bias layer 206, and the fourth terminal 24 is configured to be grounded after connecting to a switching device. Among them, the first terminal 21, the second terminal 22, and the third terminal 23 all have logical values, and the state of the switching device connected to the fourth terminal 24 is related to the logical values of the first terminal and the second terminal.

[0065] In this embodiment, the magnetic moment flipping regulation of the terminals 21 and 22 is achieved by the current generated by applying a voltage. Since the oxide layer 207 has a high resistance and makes it difficult for the current to pass through, the terminal 23 is mainly used for voltage regulation. The terminal 24 functions as a switch. The role of the magnetic bias layer 206 is to generate a stray field, which can achieve the flipping of the free layer without an external magnetic field and jointly determine the rotation direction of the hysteresis loop with the positive and negative of the voltage of the terminal 23.

[0066] As an implementation manner, the magnetization directions of the magnetic tunnel junction free layer 202 and the reference layer 204 are perpendicular to the film surface, and the magnetic bias layer 206 is magnetized in the plane. The barrier layer 203 can be selected from GdO x , MgO, and MgAl2O4. The oxide layer 207 is required to have a high resistance and can be selected from Al2O3 and MgO.

[0067] The main difference between the second embodiment and the first embodiment lies in the position of the magnetic bias layer. In the first embodiment, the magnetic bias layer and the magnetic tunnel junction are on the same side of the spin-orbit torque providing layer; in the second embodiment, the magnetic bias layer and the magnetic tunnel junction are on different sides of the spin-orbit torque providing layer.

[0068] The magnetic storage unit provided by the embodiment of the present invention can not only store data, but also realize in-memory computing based on the combined action of the principles of spin-orbit torque and electric field regulation, reducing the cost and complexity of the chip.

[0069] Application Figure 1 and Figure 2 The magnetic storage units shown can all realize in-memory computing. The methods for realizing in-memory computing of the two are based on the same principle. Here, taking the storage unit of the first embodiment as an example, how to realize in-memory computing will be introduced in detail. The in-memory computing method provided by the embodiment of the present invention includes:

[0070] Read the data currently stored in the storage unit;

[0071] Control the write signals applied to the first terminal, the second terminal, and the third terminal, and the state of the switching device connected to the fourth terminal, so that through logical calculation between the data currently stored in the storage unit and the logic values of the first terminal, the second terminal, and the third terminal, the next data to be stored in the storage unit is obtained.

[0072] To clearly illustrate this in-memory computing method, the basic principle of how this in-memory computing method is realized will be introduced in detail below.

[0073] The logic value of the first terminal 11 is denoted as A. When the first write signal applied to the first terminal 11 is V0, A = 0; when the first write signal applied to the first terminal 11 is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0;

[0074] The logic value of the second terminal 12 is denoted as B. When the second write signal applied to the second terminal 12 is V0, B = 0; when the second write signal applied to the second terminal 12 is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0;

[0075] The logic value of the third terminal 13 is denoted as C. When the third write signal applied to the third terminal 13 is -V3, C = 0; when the third write signal applied to the third terminal 13 is V3, C = 1, where V3 > 0;

[0076] Moreover, when A ≠ B, the switching device connected to the fourth terminal 14 is disconnected; when A = B, the switching device connected to the fourth terminal 14 is turned on.

[0077] In practical applications, considering the device power consumption, V0 and ΔV will not be taken very large. For example, V0 can be defined as 1V and ΔV as 1V.

[0078] The data currently stored in the storage unit is denoted as X i , and the data to be stored in the storage unit next is denoted as X i+1 , X i and X i+1 represent the resistance states of the storage unit. In this embodiment, 0 and 1 represent the low-resistance state and the high-resistance state of the storage unit respectively. That is, X i = 0 indicates that the storage unit is in the current low-resistance state, and X i = 1 indicates that the storage unit is in the current high-resistance state. X i+1 = 0 indicates that the storage unit is in the low-resistance state after writing, and X i+1 = 1 indicates that the storage unit is in the high-resistance state after writing.

[0079] Specifically, when A ≠ B, the switching device connected to the fourth terminal 14 is turned off. Then, the spin-orbit torque and the electric field act simultaneously to achieve magnetic moment reversal. When A = 1 and B = 0, the current flows from the first terminal 11 to the second terminal 12. When A = 0 and B = 1, the current flows from the second terminal 12 to the first terminal 11.

[0080] After passing a current in the direction of 11 → 12 or 12 → 11, the magnetization direction of the magnetic bias layer and the positive and negative of the voltage of the third terminal determine whether the hysteresis loop (i.e., the R-I curve) flips to a clockwise or counterclockwise loop.

[0081] As an implementation manner, the free layer 102 and the reference layer 104 are magnetized perpendicularly, and the magnetization direction of the magnetic bias layer 106 is along the direction from the first terminal 11 to the second terminal 12 (i.e., horizontally to the right). When the voltage of the third terminal 13 is a positive voltage, as Figure 3 in (a), the hysteresis loop (i.e., the R-I curve) is a clockwise loop; when the voltage of the third terminal 13 is a negative voltage, as Figure 3 in (b), the R-I curve is a counterclockwise loop.

[0082] When the magnetization direction of the reference layer is set downward and unchanged, the lower end of the hysteresis loop corresponds to the free layer magnetic moment downward, and the storage unit is in a low resistance state (0). The upper end of the hysteresis loop corresponds to the free layer magnetic moment upward, and the storage unit is in a high resistance state (1).

[0083] For example: when C = 1, the curve rotates clockwise. Initially, X i = 0. When a positive current is applied (A = 1, B = 0), the resistance state remains unchanged, and X i+1 = 0; initially, X i = 0. When a negative current is applied (A = 0, B = 1), the resistance state changes, and X i+1 = 1; initially, X i = 1. When a positive current is applied (A = 1, B = 0), the resistance state changes, and X i+1 = 0; initially, X i= 1. When a negative current is applied (A = 0, B = 1), the resistance state remains unchanged, X i+1 = 1. And so on.

[0084] Specifically, when A = B, the switching device connected to the fourth terminal 14 conducts. Then, the magnetic moment reversal is achieved by relying on the voltage-controlled magnetic anisotropy (VCMA). When A = B = 1 or A = B = 0, there is no current between the first terminal 11 and the second terminal 12. At this time, a voltage is applied to the third terminal 13, and there is only the VCMA effect. When the third terminal 13 is at a positive voltage V3, the magnetic tunnel junction barrier height decreases, and the free layer magnetic moment reverses. The initial X i = 0 changes to X i+1 = 1, or the initial X i = 1 changes to X i+1 = 0. When the third terminal is at a negative voltage -V3, the magnetic tunnel junction barrier height increases, and the free layer magnetic moment does not reverse, X i = X i+1 = 1 or X i = X i+1 = 0.

[0085] Based on the above magnetic moment reversal principle, taking A, B, C, X i as inputs and X i+1 as the output, the truth table for the logical calculation based on the storage unit of the present invention can be obtained, as shown in Table 1.

[0086] Table 1

[0087]

[0088]

[0089] According to Table 1, among the four variables A, B, C, X i , fixing any two of them and taking the other two as input variables, with X i+1 as the output, the following logical relationships can be obtained.

[0090] 1) When fixing A = 1, B = 0, the obtained truth table is shown in Table 2, and the logical relationship that can be achieved is: X i+1 = NOT C;

[0091] When fixing A = 0, B = 1, the obtained truth table is shown in Table 3, and the logical relationship that can be achieved is: X i+1 = C;

[0092] When fixing A = B = 0, the obtained truth table is shown in Table 4, and the logical relationship that can be achieved is: X i+1 = C XOR X i .

[0093] When fixing A = B = 1, the obtained truth table is shown in Table 5, and the logical relationship that can be realized is: X i+1 = C XOR X i .

[0094] 2) When fixing A = 1 and C = 0, the obtained truth table is shown in Table 6, and the logical relationship that can be realized is: X i+1 = B IMP X i ;

[0095] When fixing A = 0 and C = 1, the obtained truth table is shown in Table 7, and the logical relationship that can be realized is: X i+1 = B RIMP X i ;

[0096] When fixing A = 0 and C = 0, the obtained truth table is shown in Table 8, and the logical relationship that can be realized is: X i+1 = B RNIMP X i ;

[0097] When fixing A = 1 and C = 1, the obtained truth table is shown in Table 9, and the logical relationship that can be realized is: X i+1 = B NIMP X i .

[0098] 3) When fixing B = 1 and C = 0, the obtained truth table is shown in Table 10, and the logical relationship that can be realized is: X i+1 = A AND X i ;

[0099] When fixing B = 0 and C = 1, the obtained truth table is shown in Table 11, and the logical relationship that can be realized is: X i+1 = A NOR X i ;

[0100] When fixing B = 0 and C = 0, the obtained truth table is shown in Table 12, and the logical relationship that can be realized is: X i+1 = A OR X i ;

[0101] When fixing B = 1 and C = 1, the obtained truth table is shown in Table 13, and the logical relationship that can be realized is: X i+1 = A NAND X i .

[0102] 4) When fixing A = 1 and X i = 0, the obtained truth table is shown in Table 14, and the logical relationship that can be realized is: X i+1 = B XNOR C;

[0103] When fixing A = 0 and X i = 1, the obtained truth table is shown in Table 15, and the logical relationship that can be realized is: X i+1=B XNOR C;

[0104] When A is fixed as 0 and X i =0, the truth table obtained is shown in Table 16, and the logical relationship that can be realized is: X i+1 =C;

[0105] When A is fixed as 1 and X i =1, the truth table obtained is shown in Table 17, and the logical relationship that can be realized is: X i+1 =NOT C.

[0106] 5) When B is fixed as 1 and X i =0, the truth table obtained is shown in Table 18, and the logical relationship that can be realized is: X i+1 =C;

[0107] When B is fixed as 0 and X i =1, the truth table obtained is shown in Table 19, and the logical relationship that can be realized is: X i+1 =NOT C;

[0108] When B is fixed as 0 and X i =0, the truth table obtained is shown in Table 20, and the logical relationship that can be realized is: X i+1 =A XOR C;

[0109] When B is fixed as 1 and X i =1, the truth table obtained is shown in Table 21, and the logical relationship that can be realized is: X i+1 =A XOR C.

[0110] 6) When C is fixed as 1 and X i =0, the truth table obtained is shown in Table 22, and the logical relationship that can be realized is: X i+1 =A IMP B;

[0111] When C is fixed as 0 and X i =1, the truth table obtained is shown in Table 23, and the logical relationship that can be realized is: X i+1 =A RIMP B;

[0112] When C is fixed as 0 and X i =0, the truth table obtained is shown in Table 24, and the logical relationship that can be realized is: X i+1 =A NIMP B;

[0113] When C is fixed as 1 and X i =1, the truth table obtained is shown in Table 25, and the logical relationship that can be realized is: X i+1 =A RNIMP B.

[0114] From the above description, it can be seen that a total of 12 logical relationships can be realized. Including: X i+1= C, NOT, XOR, IMP, RIMP, RNIMP, NIMP, AND, NOR, OR, NAND, and XNOR.

[0115] Table 2

[0116]

[0117] Table 3

[0118]

[0119] Table 4

[0120]

[0121] Table 5

[0122]

[0123] Table 6

[0124]

[0125] Table 7

[0126]

[0127] Table 8

[0128]

[0129] Table 9

[0130]

[0131] Table 10

[0132]

[0133] Table 11

[0134]

[0135] Table 12

[0136]

[0137] Table 13

[0138]

[0139] Table 14

[0140]

[0141] Table 15

[0142]

[0143] Table 16

[0144]

[0145] Table 17

[0146]

[0147] Table 18

[0148]

[0149] Table 19

[0150]

[0151] Table 20

[0152]

[0153] Table 21

[0154]

[0155] Table 22

[0156]

[0157] Table 23

[0158]

[0159] Table 24

[0160]

[0161] Table 25

[0162]

[0163] Tables 2 - 25 all conform to the truth table of Table 1. Tables 2 - 25 respectively represent the logical relationships satisfied between the outputs and inputs derived by fixing two inputs and taking the other two inputs as variables. There are a total of 24 tables, which can implement 12 logical calculations.

[0164] In contrast, as another embodiment, if the free layer and the reference layer are magnetized perpendicularly, and the magnetization direction of the magnetic bias layer is along the direction from the second terminal 12 to the first terminal 11 (i.e., horizontally to the left), in this case, the rotation direction of the hysteresis loop is opposite. When the voltage of the third terminal 13 is a positive voltage, the R-I curve is a counterclockwise loop; when the voltage of the third terminal 13 is a negative voltage, the R-I curve is a clockwise loop. Due to the different magnetization directions of the magnetic bias layer, the corresponding truth table is slightly different, and its logical operation relationship is also different. However, 12 kinds of logical calculations can still be achieved. Four examples are as follows: When A = 1 and B = 0 are fixed, the logical relationship: X i+1 = C; when A = 0 and B = 1 are fixed, the logical relationship: X i+1 = NOT C; when A = B = 0 or A = B = 1 are fixed, the logical relationship: X i+1 = C XOR X i .

[0165] The in-memory computing method of the magnetic storage unit provided by the embodiment of the present invention does not require data migration, can implement various logical operations, can improve the computing speed, and reduce the device power consumption.

[0166] The in-memory computing method implemented based on the magnetic storage unit of the second embodiment can refer to the in-memory computing method implemented based on the magnetic storage unit of the first embodiment, and will not be elaborated here.

[0167] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A magnetic storage unit, characterized in that, Comprising: A spin-orbit torque providing layer and a magnetic tunnel junction above it; A magnetic bias layer, located above the magnetic tunnel junction; An oxide layer, located above the magnetic bias layer; A top electrode, located above the oxide layer; A first terminal, connected to one end of the spin-orbit torque providing layer, the first terminal configured to apply a first write signal; A second terminal, connected to the other end of the spin-orbit torque providing layer, the second terminal configured to apply a second write signal; A third terminal, connected to the top electrode, the third terminal configured to apply a third write signal; A fourth terminal, connected to the bottom end of the spin-orbit torque providing layer, the fourth terminal configured to be grounded after connecting to a switching device; Wherein, the first terminal, the second terminal, and the third terminal all have logical values, and the state of the switching device connected to the fourth terminal is related to the logical values of the first terminal and the second terminal.

2. The magnetic storage unit according to claim 1, wherein The logical value of the first terminal is denoted as A. When the first write signal applied by the first terminal is V0, A = 0; when the first write signal applied by the first terminal is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the second terminal is denoted as B. When the second write signal applied by the second terminal is V0, B = 0; when the second write signal applied by the second terminal is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the third terminal is denoted as C. When the third write signal applied by the third terminal is -V3, C = 0; when the third write signal applied by the third terminal is V3, C = 1, where V3 > 0; And, when A ≠ B, the switching device connected to the fourth terminal is disconnected; when A = B, the switching device connected to the fourth terminal is conductive.

3. The magnetic storage unit according to claim 1, wherein The magnetic tunnel junction includes: A free layer, adjacent to the spin-orbit torque providing layer; A barrier layer, located above the free layer; A reference layer, located above the barrier layer.

4. The magnetic storage unit according to claim 3, characterized in that, The barrier layer includes GdO x , one of MgO and MgAl2O4.

5. The magnetic storage unit according to claim 1, characterized in that, The oxide layer includes one of Al2O3 and MgO.

6. A magnetic storage unit, characterized in that, Comprising: A spin-orbit torque providing layer and a magnetic tunnel junction above it; A magnetic bias layer, located below the spin-orbit torque providing layer; An oxide layer, located above the magnetic tunnel junction; A top electrode, located above the oxide layer; A first terminal, connected to one end of the spin-orbit torque providing layer, the first terminal configured to apply a first write signal; A second terminal, connected to the other end of the spin-orbit torque providing layer, the second terminal configured to apply a second write signal; A third terminal, connected to the top electrode, the third terminal configured to apply a third write signal; A fourth terminal, connected to the bottom end of the magnetic bias layer, the fourth terminal configured to be grounded after connecting to a switching device; Wherein, the first terminal, the second terminal, and the third terminal all have logical values, and the state of the switching device connected to the fourth terminal is related to the logical values of the first terminal and the second terminal.

7. The magnetic storage unit according to claim 6, wherein The logical value of the first terminal is denoted as A. When the first write signal applied to the first terminal is V0, A = 0; when the first write signal applied to the first terminal is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the second terminal is denoted as B. When the second write signal applied to the second terminal is V0, B = 0; when the second write signal applied to the second terminal is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the third terminal is denoted as C. When the third write signal applied to the third terminal is -V3, C = 0; when the third write signal applied to the third terminal is V3, C = 1, where V3 > 0; Moreover, when A ≠ B, the switching device connected to the fourth terminal is turned off; when A = B, the switching device connected to the fourth terminal is turned on.

8. The magnetic storage cell according to claim 6, wherein, The magnetic tunnel junction includes: A free layer, adjacent to the spin-orbit torque providing layer; A barrier layer, located above the free layer; A reference layer, located above the barrier layer.

9. The magnetic storage unit according to claim 8, wherein, The barrier layer includes GdO x , one of MgO and MgAl2O4.

10. The magnetic storage unit according to claim 6, wherein The oxide layer includes one of Al2O3 and MgO.

11. A method for in-memory computing of a magnetic storage unit, implemented by using the magnetic storage unit as described in any one of claims 1 to 10, characterized in that, The method includes: Reading the data currently stored in the storage unit; Controlling the write signals applied to the first terminal, the second terminal, and the third terminal, and the state of the switching device connected to the fourth terminal, such that through logical calculation between the data currently stored in the storage unit and the logical values of the first terminal, the second terminal, and the third terminal, the data to be stored in the storage unit next is obtained.

12. The method according to claim 11, wherein The logical value of the first terminal is denoted as A. When the first write signal applied to the first terminal is V0, A = 0; when the first write signal applied to the first terminal is V0 + ΔV, A = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the second terminal is denoted as B. When the second write signal applied to the second terminal is V0, B = 0; when the second write signal applied to the second terminal is V0 + ΔV, B = 1, where V0 ≥ 0 and ΔV > 0; The logical value of the third terminal is denoted as C. When the third write signal applied to the third terminal is -V3, C = 0; when the third write signal applied to the third terminal is V3, C = 1, where V3 > 0; Moreover, when A ≠ B, the switching device connected to the fourth terminal is turned off; when A = B, the switching device connected to the fourth terminal is turned on.

13. The method according to claim 11, wherein The data currently stored in the storage cell is denoted as X i , and the data to be stored next in the storage cell is denoted as X i+1 , X i and X i+1 represent the resistance state of the storage cell.

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