Configurable Faraday shield and operation method thereof, and plasma processing device

Abstract

The present disclosure provides a configurable Faraday shield, a method of operating the same, and a plasma processing apparatus. The configurable Faraday shield includes a plurality of rib-like bodies. Each rib-like body may be spaced apart from each other in a circumferential direction. In addition, at least a portion of the configurable Faraday shield is movable at least between a first position and a second position to selectively couple the configurable Faraday shield to a radio frequency ground plane. When at least a portion of the configurable Faraday shield is in the first position, the configurable Faraday shield may be decoupled from the radio frequency ground plane such that the configurable Faraday shield is electrically floating. In contrast, when at least a portion of the configurable Faraday shield is in the second position, the configurable Faraday shield may be coupled to the radio frequency ground plane such that the configurable Faraday shield is electrically grounded.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Provisional Application Serial No. 63 / 130,990, filed on December 28, 2020, entitled “Configurable Faraday Shield,” the entire contents of which are incorporated herein by reference. This application claims priority to U.S. Provisional Application Serial No. 63 / 208,050, filed on June 8, 2021, entitled “Configurable Faraday Shield,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates generally to plasma processing apparatus and, more particularly, to a configurable Faraday shield for a plasma processing apparatus. Background Art

[0004] Plasma processing is widely used in the semiconductor industry for deposition, etching, resist removal and related processing of semiconductor wafers and other substrates. Plasma sources (e.g., microwave, ECR, inductive coupling, etc.) are typically used in plasma processing to generate high-density plasma and reactive species for processing substrates. In a plasma dry stripping process, neutral species (e.g., free radicals) from a plasma generated in a remote plasma chamber pass through a barrier into a processing chamber to process a workpiece, such as a semiconductor wafer. In a plasma etching process, free radicals, ions, and other species generated in the plasma directly exposed to the workpiece can be used to etch and / or remove material from the workpiece. Summary of the invention

[0005] Aspects and advantages of embodiments of the present disclosure will be set forth in part in the following description, or may be learned from the description, or may be learned through practice of the embodiments.

[0006] In one aspect, a configurable Faraday shield is provided. The configurable Faraday shield includes a plurality of ribs. Each rib may be spaced apart from each other in a circumferential direction. The configurable Faraday shield may include a plurality of conductive strips. The configurable Faraday shield may include a locking member movable between at least a first position and a second position to selectively couple each of the plurality of ribs to a radio frequency ground plane via a corresponding conductive strip of the plurality of conductive strips.

[0007] In another aspect, a method of operating a configurable Faraday shield of a plasma processing apparatus is provided. The method includes moving at least a portion of the configurable Faraday shield to a first position to decouple the configurable Faraday shield from a radio frequency ground plane, such that the configurable Faraday shield electrically floats during a first portion of a plasma processing process for a workpiece disposed within a processing chamber of the plasma processing apparatus. The method includes applying radio frequency power to the configurable Faraday shield when at least a portion of the configurable Faraday shield is in the first position. The method includes moving at least a portion of the configurable Faraday shield from the first position to a second position to couple the configurable Faraday shield to the radio frequency ground plane, such that the configurable Faraday shield is electrically grounded during a second portion of the plasma processing process.

[0008] In yet another aspect, a plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber. The plasma processing apparatus further includes an induction coil positioned outside the plasma chamber. The plasma processing apparatus even further includes a configurable Faraday shield positioned outside the plasma chamber, such that the configurable Faraday shield is positioned between the induction coil and an outer surface of the plasma chamber. The configurable Faraday shield includes a plurality of ribs spaced apart from each other. In addition, at least a portion of the configurable Faraday shield is movable between at least a first position and a second position to selectively couple the configurable Faraday shield to a radio frequency ground plane.

[0009] These and other features, aspects and advantages of various embodiments will be better understood with reference to the following description and appended claims.The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the relevant principles. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] A detailed discussion of embodiments for those of ordinary skill in the art is set forth in the specification with reference to the accompanying drawings, in which:

[0011] Figure 1 An exemplary plasma processing apparatus according to an exemplary embodiment of the present disclosure is depicted.

[0012] Figure 2 A configurable Faraday shield having a movable member in a first position is depicted according to an exemplary embodiment of the present disclosure.

[0013] Figure 3 Depicts a locking member without an exemplary embodiment of the present disclosure. Figure 2 Configurable Faraday shield.

[0014] Figure 4Depicted is an exemplary embodiment according to the present disclosure Figure 2 Side view of.

[0015] Figure 5 A configurable Faraday shield having a movable member in a second position is depicted according to an exemplary embodiment of the present disclosure.

[0016] Figure 6 Depicted is an exemplary embodiment according to the present disclosure Figure 5 Side view of.

[0017] Figure 7 A configurable Faraday shield having a movable member in a third position is depicted according to an exemplary embodiment of the present disclosure.

[0018] Figure 8 Depicted is an exemplary embodiment according to the present disclosure Figure 7 Side view of.

[0019] Fig. 9 A locking member of a configurable Faraday shield is depicted in a first position such that the Faraday shield is electrically floating, according to an exemplary embodiment of the present disclosure.

[0020] Fig.10 A locking member of a configurable Faraday shield is depicted in a second position such that the Faraday shield is electrically grounded, according to an exemplary embodiment of the present disclosure.

[0021] Fig.11 A configurable Faraday shield for an electrically floating plasma processing apparatus is depicted according to an exemplary embodiment of the present disclosure.

[0022] Fig.12 Depicts an exemplary embodiment of the present disclosure Fig.11 Cross-sectional view of .

[0023] Fig.13 A configurable Faraday shield for an electrically grounded plasma processing apparatus is depicted according to an exemplary embodiment of the present disclosure.

[0024] Fig.14 A flow chart of a method of controlling operation of a configurable Faraday shield is depicted according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] Reference will now be made in detail to embodiments of the present invention, one or more examples of which are shown in the accompanying drawings. Each example is provided to explain the embodiments and is not intended to be a limitation of the present invention. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the embodiments without departing from the scope or spirit of the present disclosure. For example, a feature shown or described as part of one embodiment may be used together with another embodiment to produce yet another embodiment. Therefore, the present invention is intended to encompass such modifications and variations within the scope of the appended claims and their equivalents.

[0026] Exemplary aspects of the present disclosure relate to plasma processing apparatus. The plasma processing apparatus may include an electrically grounded Faraday shield. Alternatively, the plasma processing apparatus may include a non-electrically grounded (e.g., floating) Faraday shield. However, it is desirable that the plasma processing apparatus include a Faraday shield that can be selectively coupled to an electrical ground (e.g., an RF ground plane) so that the Faraday shield can be selectively grounded or selectively floating.

[0027] Exemplary aspects of the present disclosure relate to a configurable Faraday shield. The configurable Faraday shield may include a plurality of ribs. Each of the plurality of ribs may be spaced apart from one another. For example, in some embodiments, the plurality of ribs may be spaced apart circumferentially from one another. The configurable Faraday shield may include a plurality of conductive strips. In some embodiments, each of the plurality of conductive strips may be coupled to a corresponding rib of the plurality of ribs.

[0028] In some embodiments, a configurable Faraday shield can include a locking member. The locking member can be movable between at least a first position and a second position to selectively couple the plurality of ribs to a radio frequency ground plane via corresponding ones of the plurality of conductive strips. For example, in some embodiments, the locking member can define a plurality of notches. When the locking member is in the first position, each of the plurality of conductive strips can be positioned in a corresponding one of the plurality of notches such that the plurality of conductive strips do not contact (e.g., touch) the radio frequency ground plane. In this manner, the plurality of ribs can be decoupled from the radio frequency ground plane such that the Faraday shield is electrically floating (e.g., not electrically grounded).

[0029] In some embodiments, the locking member can rotate about the axis and move (e.g., translate) along the axis to move from the first position to the second position. When the locking member is in the second position, the locking member presses a portion of each of the plurality of conductive strips against the RF ground plane. In this way, each of the plurality of ribs can be electrically coupled to the RF ground plane via a corresponding conductive strip of the plurality of conductive strips, so that the Faraday shield is electrically grounded.

[0030] A configurable Faraday shield according to an exemplary embodiment of the present disclosure can provide many benefits and technical effects. For example, a locking member can be moved between a first position and a second position to selectively couple the ribs of the Faraday shield to a radio frequency ground plane. In this way, the process window of a plasma processing device having a configurable Faraday shield according to an exemplary embodiment of the present disclosure can be expanded because the Faraday shield can be grounded or floated via the movement of the locking member. For example, during a plasma strike window of a plasma processing process (e.g., stripping, etching), the locking member can be moved to a first position to electrically float the Faraday shield, thereby reducing the amount of radio frequency power consumed during the plasma strike process. Conversely, during a plasma maintenance window of a plasma processing process, the locking member can be moved to a second position to electrically ground the Faraday shield.

[0031] For purposes of illustration and discussion, aspects of the present disclosure are discussed with reference to a "workpiece," "wafer," or semiconductor wafer. One of ordinary skill in the art, using the disclosure provided herein, will understand that the exemplary aspects of the present disclosure can be used in association with any semiconductor workpiece or other suitable workpiece. In addition, the term "about" used in conjunction with a numerical value will be intended to refer to within ten percent (10%) of the stated value. "Pedestal" refers to any structure that can be used to support a workpiece. "Remote plasma" refers to a plasma generated away from a workpiece, such as a plasma generated in a plasma chamber separated from the workpiece by a barrier. "Direct plasma" refers to a plasma directly exposed to a workpiece, such as a plasma generated in a processing chamber having a pedestal operable to support a workpiece.

[0032] Now referring to the accompanying drawings, Figure 1 An exemplary plasma processing apparatus 100 according to an exemplary embodiment of the present disclosure is depicted, which can be used to perform a plasma processing process (e.g., etching, stripping) on ​​a workpiece (e.g., a semiconductor wafer). The plasma processing apparatus 100 may include a processing chamber 110 and a plasma chamber 120 separated from the processing chamber 110. For example, the plasma processing apparatus 100 may include a grill assembly 130 configured to separate the processing chamber 110 from the plasma chamber 120.

[0033] In some embodiments, the grid assembly 130 may include at least a first grid plate 132 and a second grid plate 134. The first grid plate 132 and the second grid plate 134 may be arranged relative to each other so that the first grid plate 132 and the second grid plate 134 are substantially parallel to each other. The first grid plate 132 may have a first grid pattern with a plurality of holes. The second grid plate 134 may have a second grid pattern with a plurality of holes. In some embodiments, the first grid pattern may be the same as the second grid pattern. In an alternative embodiment, the first grid pattern may be different from the second grid pattern.

[0034] Charged particles (e.g., ions) may recombine on the walls in their path through the holes of each grid plate 132, 134 in the grid assembly 130. Neutral species (e.g., free radicals) may flow relatively freely through the holes in the first grid plate 132 and the second grid plate 134.

[0035] As shown, the plasma processing apparatus 100 may include a workpiece support 112 (e.g., a susceptor) disposed within a processing chamber 110. The workpiece support 112 may support a workpiece 114 to be processed, such as a semiconductor wafer. In this exemplary illustration, a remote plasma 102 is generated in a plasma chamber 120 (i.e., a plasma generation region) by an inductively coupled plasma source 140, and a desired species is transported through a barrier assembly 130 and onto the workpiece 114 via a channel.

[0036] The plasma chamber 120 may include dielectric sidewalls 122 and a top 124. The dielectric sidewalls 122, top 124, and a barrier assembly 130 may define a plasma chamber interior 125. The dielectric sidewalls 122 may be formed of a dielectric material, such as quartz and / or alumina. In an alternative embodiment, the dielectric sidewalls 122 may be formed of a ceramic material. The inductively coupled plasma source 140 may include an inductive coil 142 disposed proximate the dielectric sidewalls 122 around the plasma chamber 120. The inductive coil 142 may be electrically coupled to an RF power generator 144 via a suitable matching network 146.

[0037] The process gas may be provided to the plasma chamber interior 125 from a gas supply 150 and a gas distribution channel 151 or other suitable gas introduction mechanism. When the induction coil 142 is excited by RF power from an RF power generator 144, a remote plasma 102 may be generated in the plasma chamber 120. In a specific embodiment, the plasma processing apparatus 100 may include a grounded Faraday shield 128 positioned to reduce capacitive coupling of the induction coil 142 with the remote plasma 102. For example, the grounded Faraday shield 128 may be positioned between the induction coil and the outer surface of the dielectric sidewall 122 of the plasma chamber 120. Although one induction coil 142 is shown, the present disclosure is not limited thereto. In fact, any number of induction coils or induction coil assemblies may be utilized herein to generate a remote plasma 102 in the plasma chamber 120.

[0038] The plasma processing apparatus 100 is operable to generate a remote plasma 102 (e.g., a remote plasma) in a plasma chamber 120. In addition, the plasma processing apparatus 100 is operable to generate a direct plasma 104 in a processing chamber 110. The remote plasma 102 may be generated by an inductively coupled plasma source. The direct plasma 104 may be generated by, for example, a capacitively coupled plasma source (e.g., a bias in combination with a grounded shield).

[0039] More specifically, the plasma processing apparatus 100 includes a bias source having a bias electrode 160 in a workpiece support 112. The bias electrode 160 may be coupled to an RF power generator 162 via a suitable matching network 164. When the bias electrode 160 is energized by RF energy, a direct plasma 104 may be generated in the process chamber 110 from a filtered mixture or process gas for direct exposure to the workpiece 114. The process chamber 110 may include an exhaust port 166 for exhausting gases from the process chamber 110.

[0040] In some embodiments, the workpiece support 112 is configured so that a DC bias can be applied to the workpiece 114. In some embodiments, a DC power source is applied to a bias electrode 160 located in the workpiece support 112. The DC bias can be applied to generate an electric field so that certain species can be attracted to and / or accelerated toward the workpiece 114 by the workpiece 114. By applying a DC bias to the workpiece 114, the flux of certain ion species can be controlled. This can promote polymer film growth or free radical etching on the structure of the workpiece 114. In some embodiments, the DC bias applied or provided to the bias electrode is from about 50W to about 150W. The DC bias can be applied to the workpiece 114 to accelerate certain species from the first plasma 502 and / or the second plasma 504 toward the workpiece 114.

[0041] like Figure 1 As shown, according to exemplary aspects of the present disclosure, the plasma processing apparatus 100 may include a gas delivery system configured to deliver process gas to the plasma chamber 120, for example, via a gas distribution channel 151 or other distribution system (e.g., a showerhead). The gas delivery system may include a plurality of feed gas pipelines 159. The feed gas pipelines 159 may be controlled using valves 158 and / or gas flow controllers to deliver a desired amount of gas as a process gas into the plasma chamber 120. The gas delivery system may be used to deliver any suitable process gas. Exemplary process gases include oxygen-containing gases (e.g., O 2 , O 3 、N 2 O, H 2 O), hydrogen-containing gases (such as H 2 , D 2 ), nitrogen-containing gases (such as N 2 NH 3 、N 2 O), fluorine-containing gases (such as CF 4 , C 2 F 4 , CHF 3 , CH 2 F 2 , CH 3 F. SF 6 NF 3 ), hydrocarbon-containing gases (such as CH 4 ) or a combination thereof. Additional feed gas lines containing other gases may be added as needed. In some embodiments, the process gas may be mixed with what may be referred to as a "carrier" gas (such as He, Ar, Ne, Xe, or N 2 ) is mixed with an inert gas. A control valve 158 may be used to control the flow rate of each feed gas line to flow the process gas into the plasma chamber 120. In an embodiment, the gas delivery system may be controlled by a gas flow controller.

[0042] Reference now Figures 2 to 4 According to an exemplary embodiment of the present disclosure, a configurable Faraday shield 200 is provided. It should be understood that the configurable Faraday shield 200 can be used to replace the above reference Figure 1 The grounded Faraday shield 128 discussed. The configurable Faraday shield 200 defines an axial direction A, a circumferential direction C, and a radial direction R. The configurable Faraday shield 200 may include a plurality of ribs 210. As shown, each rib 210 may be spaced apart from one another along the circumferential direction C. In this manner, an air gap 212 may be defined between adjacent ribs 210.

[0043] In some embodiments, the plurality of ribs 210 can be coupled between the first RF ground plane 220 of the configurable Faraday shield 200 and the second RF ground plane 222 of the configurable Faraday shield 200 along the axial direction A. Additionally, in some embodiments, the configurable Faraday shield 200 can include a first dielectric spacer 230 and a second dielectric spacer 232 spaced apart from the first dielectric spacer 230 along the axial direction A. It should be understood that the first dielectric spacer 230 and the second dielectric spacer 232 can be formed of any suitable dielectric material. In some embodiments, the first dielectric spacer 230 can be coupled between the first RF ground plane 220 and the plurality of ribs 210 along the axial direction A. Additionally, the second dielectric spacer 232 can be coupled between the second RF ground plane 222 and the plurality of ribs 210 along the axial direction A.

[0044] The configurable Faraday shield 200 may include a plurality of conductive strips 240. In some embodiments, each conductive strip 240 may be coupled to a corresponding rib 210 of the plurality of ribs 210. As shown, each of the plurality of conductive strips 240 may have a first portion 242, a second portion 244, and a third portion 246. In some embodiments, the first portion 242 of each conductive strip 240 may be coupled to a corresponding rib 210 of the plurality of ribs 210 ( Figure 3 ). The second portion 244 can be bent relative to the first portion 242. For example, in some embodiments, the second portion 244 can be bent at an angle greater than 90 degrees. The third portion 246 can be bent relative to the second portion 244 so that the third portion 246 is substantially parallel to the first portion 242. In some embodiments, at least one of the plurality of conductive strips 240 can include beryllium copper (BeCu). It should be understood that the plurality of conductive strips 240 can include any suitable conductive material. Alternatively or additionally, the thickness of each of the plurality of conductive strips 240 can be in the range of about 2 mm to about 15 mm.

[0045] The configurable Faraday shield 200 may include a locking member 250. In some embodiments, the locking member 250 may define a plurality of notches 252. As shown, the locking member 250 is in a first position, wherein each of the plurality of conductive strips 240 is positioned in a corresponding notch in the plurality of notches 252 such that the plurality of conductive strips 240 do not contact (e.g., touch) the first RF ground plane 220. In this manner, the plurality of ribs 210 may be decoupled from the first RF ground plane 220 such that the configurable Faraday shield 200 is electrically floating (e.g., not electrically grounded). As will be discussed below, the locking member 250 may be moved to a second position ( Figure 7 and Figure 8) to couple each of the plurality of ribs 210 to an RF ground plane (eg, first RF ground plane 220) via corresponding conductors of the plurality of conductive strips 240 so that the configurable Faraday shield 200 is electrically grounded.

[0046] Reference now Figure 5 and Figure 6 , according to an exemplary embodiment of the present disclosure, depicts a configurable Faraday shield 200 with the locking member 250 in an intermediate third position. In some embodiments, the locking member 250 can be rotated about the axis A to move from the first position ( Figure 2 and Figure 4 ) to an intermediate third position. When the locking member 250 is in the intermediate third position, the plurality of conductive strips 240 are no longer positioned within corresponding notches of the plurality of notches 252 defined by the locking member 250. Instead, the locking member 250 presses against the second portion 244 of each of the plurality of conductive strips 240. In some embodiments, the locking member 250 may press the second portion 244 of each of the plurality of conductive strips 240 against the first dielectric spacer 230.

[0047] Reference now Figure 7 and Figure 8 , according to an exemplary embodiment of the present disclosure, a configurable Faraday shield 200 is depicted with the locking member 250 in a second position. In some embodiments, the locking member 250 can be moved along the axial direction A in a first direction (e.g., downward) to move from the intermediate third position to the second position. When the locking member 250 is in the second position, the locking member 250 presses the third portion 246 of each of the plurality of conductive strips 240 against the first RF ground plane 220. In this manner, each of the plurality of ribs 210 can be electrically coupled to the first RF ground plane 220 via a corresponding conductive strip of the plurality of conductive strips 240. It should be understood that the locking member 250 can be moved along the axial direction A in a second direction opposite to the first direction (e.g., upward) to move from the second position to the intermediate third position ( Figure 5 and 6 ).

[0048] In some embodiments, the configurable Faraday shield 200 may include a second locking member (not shown) that is in the first position ( Figure 2 and Figure 4) and a second position to selectively couple the plurality of ribs 210 to the second RF ground plane 222. When the second locking member is in the first position, the plurality of ribs 210 can be decoupled from the second RF ground plane such that the configurable Faraday shield 200 is electrically floating (e.g., not electrically grounded). Conversely, when the second locking member is in the second position, the plurality of ribs 210 can be electrically coupled to the second RF ground plane 222 via corresponding conductive strips in the plurality of conductive strips 240. It should be understood that when both locking members are in the second position, the configurable Faraday shield 200 can be fully electrically grounded such that each of the plurality of ribs 210 is electrically coupled to the first RF ground plane 220 and the second RF ground plane 222 via corresponding conductive strips in the plurality of conductive strips 240.

[0049] In some embodiments, the movement of the locking member 250 between the first position and the second position can be manually controlled by a user. For example, a user can interact with one or more input devices (e.g., actuators) to provide user input associated with moving the locking member 250 from the first position to the second position, or vice versa. In alternative embodiments, the movement of the locking member 250 can be automated. For example, one or more control devices (e.g., processors) can be configured to control the movement of the locking member 250 based at least in part on data (e.g., pressure, temperature, etc.) associated with a plasma processing process (e.g., stripping, etching), wherein these data are performed on a workpiece positioned within a processing chamber of a plasma processing device.

[0050] Reference now Fig. 9 and Fig.10 According to an exemplary embodiment of the present disclosure, there is provided a device having at least a first position ( Fig. 9 ) and the second position ( Fig.10 ) between the locking member 310 and the locking member 310. In some embodiments, the locking member 310 can be coupled to the main body 320 (e.g., the top plate) via a plurality of conductive strips 330. For example, a first end of each of the plurality of conductive strips 330 can be coupled to the locking member 310, and a second end of each of the plurality of conductive strips 330 can be coupled to the top surface 322 of the main body 320. In some embodiments, the plurality of conductive strips 330 can be integrally formed with the locking member 310. In such embodiments, the locking member 310 and the plurality of conductive strips 330 can include any suitable metal.

[0051] When the locking member 310 is in the first position ( Fig. 9), the locking member 310 is positioned outside the cavity 324 defined by the main body 320 (e.g., the top plate), so that the locking member 310 does not contact (e.g., touch) the plurality of ribs 340 of the configurable Faraday shield 300 disposed in the cavity 324. In this way, the plurality of ribs 340 can be decoupled from the main body 320, so that the configurable Faraday shield 300 is electrically floating (e.g., non-grounded).

[0052] As shown, the locking member 310 can be lowered into the cavity 324 to move from the first position ( Fig. 9 ) moves to the second position ( Fig.10 ). For example, the locking member 310 can be lowered into the cavity 332 until the locking member 310 contacts (e.g., touches) the plurality of ribs 340. When the locking member 310 contacts the plurality of ribs 340, each of the plurality of ribs 340 can be electrically coupled to the body 320 (e.g., the top plate) via the locking member 310 and the plurality of conductive strips 330. In this manner, the configurable Faraday shield 300 can be electrically grounded when the locking member 310 is in the second position.

[0053] Reference now Figures 11 to 13 According to an exemplary embodiment of the present disclosure, a plasma processing device 400 is provided. The plasma processing device 400 may define an axial direction A, a radial direction R, and a circumferential direction. The plasma processing device 400 includes a processing chamber 410 having an inner surface 412 and an outer surface 414. In some embodiments, the processing chamber 410 may be a plasma chamber.

[0054] In some embodiments, the plasma processing apparatus 400 may include a lid 420. As shown, the lid 420 may be positioned such that the top plate 420 defines a top of the processing chamber 410. In some embodiments, a gas inlet (e.g., a showerhead) may extend into the processing chamber 410 via an opening defined by the lid 420. In this manner, a gas may flow into the processing chamber 410 via the gas inlet.

[0055] In some embodiments, the plasma processing apparatus 400 may include the above reference Figure 1 The induction coil 142 discussed. As shown, the induction coil 142 can surround a portion of the outer surface 414 of the processing chamber 410. It should be understood that the induction coil 142 can be electrically coupled to the RF generator via a suitable matching network.

[0056] The plasma processing apparatus 400 may include a configurable Faraday shield 430 positioned between the induction coil 142 and the outer surface 414 of the processing chamber 410. The configurable Faraday shield 430 may include a base 432. The configurable Faraday shield 430 may further include a plurality of ribs 434. As shown, each of the plurality of ribs 434 may extend from the base 432, such that each of the plurality of ribs 434 is substantially perpendicular (e.g., less than 15 degrees, less than 10 degrees, less than 5 degrees, less than 1 degree, etc., from 90 degrees) to the base 432. In addition, the plurality of ribs 434 may be spaced apart from each other in a circumferential direction.

[0057] The configurable Faraday shield 430 can be positioned along the axial direction A in at least a first position ( Fig.11 and Fig.12 ) and the second position ( Fig.13 ) to selectively couple the configurable Faraday shield 430 to an RF ground plane. For example, in some embodiments, the RF ground plane may include a top plate 440 of the plasma processing apparatus 400. When the configurable Faraday shield 430 is in the first position, the configurable Faraday shield 430 may be spaced apart from the top plate 440 along the axial direction A, such that the configurable Faraday shield 430 is electrically floating (e.g., not electrically grounded). Conversely, when the configurable Faraday shield 430 is in the second position, the base 432 of the configurable Faraday shield 430 may contact (e.g., touch) the top plate 440, such that the configurable Faraday shield 430 is electrically grounded.

[0058] In some embodiments, the configurable Faraday shield 430 can be manually positioned in the first position ( Fig.11 and Fig.12 ) and the second position ( Fig.13 ) between the top plate 440 and the base 432 of the configurable Faraday shield 430. For example, a user (e.g., a technician) can open the RF cage to gain access to the configurable Faraday shield 430. In such embodiments, the user can move the configurable Faraday shield 430 from the second position to the first position along the axial direction A. Additionally, once the configurable Faraday shield 430 is in the first position, the user can insert the spacer 450 between the top plate 440 and the base 432 of the configurable Faraday shield 430 to maintain the configurable Faraday shield 430 in the first position.

[0059] It should be understood that the spacer 450 can include any suitable insulating material. For example, in some embodiments, the spacer 450 can include a ceramic material. In alternative embodiments, the spacer 450 can include a plastic material (e.g., Teflon, polyetherimide, polyetheretherketone).

[0060] In an alternative embodiment, the configurable Faraday shield 430 can be automatically positioned in the first position ( Fig.11 and Fig.12 ) and the second position ( Fig.13 ). For example, in some embodiments, the plasma processing apparatus may include a motor configured to drive the configurable Faraday shield 430 to move between the first position and the second position along the axial direction A. In such embodiments, the spacer 450 is not required. Instead, when the configurable Faraday shield 430 is in the first position ( Fig.11 and 12 ), an air gap will be defined between the top plate 440 and the base 432 of the configurable Faraday shield 430, such that the configurable Faraday shield 430 is electrically floating (eg, not electrically grounded).

[0061] Reference now Fig.14 According to an exemplary embodiment of the present disclosure, a flow chart of a method 500 for controlling a pressure control system for a multi-head pump for a plasma processing apparatus is provided. It should be understood that the method 500 may be used with reference to Figures 2 to 8 as well as Figures 11 to 13 The configurable Faraday shields 200, 400 discussed above are implemented. Fig.14 The steps are depicted as being performed in a particular order for purposes of illustration and discussion. A person of ordinary skill in the art will understand, using the disclosure provided by this specification, that the various steps of method 500 may be adjusted, modified, rearranged, performed simultaneously, or modified in various ways without departing from the scope of the present disclosure.

[0062] At (502), method 500 may include moving at least a portion of a configurable Faraday shield to a first position to decouple the configurable Faraday shield from a radio frequency ground plane such that the configurable Faraday shield electrically floats during a first portion (e.g., a plasma strike window) of a plasma processing process (e.g., stripping, etching) for a workpiece disposed within a processing chamber of a plasma processing apparatus.

[0063] In some embodiments, moving at least a portion of the configurable Faraday shield may include moving a locking member of the configurable Faraday shield to a first position to decouple a plurality of ribs of the configurable Faraday shield from a radio frequency ground plane, such that the configurable Faraday shield electrically floats during a first portion (e.g., a plasma strike window) of a plasma processing process (e.g., stripping, etching) for a workpiece disposed within a processing chamber of a plasma processing apparatus. For example, in some embodiments, moving the locking member to the first position may include rotating the locking member about an axis. Alternatively or additionally, moving the locking member to the first position may include moving (e.g., translating) the locking member along the axis.

[0064] In an alternative embodiment, moving at least a portion of the configurable Faraday shield to the first position may include moving the entire configurable Faraday shield along an axis (e.g., axial direction) to the first position. For example, in some embodiments, a user may manually move the configurable Faraday shield to the first position. In an alternative embodiment, the configurable Faraday shield may be operably coupled to a motor such that the motor may be operated to move the configurable Faraday shield to the first position.

[0065] At (504), method 500 may include applying RF power to the Faraday shield while the locking member is in the first position. For example, in some embodiments, the Faraday shield may be electrically coupled to an RF power source via a suitable matching network. In this manner, RF power may be applied to the Faraday shield, for example, to capacitively couple the Faraday shield to the inductive coil. However, it should be understood that RF power may be applied to capacitively couple the Faraday shield to any suitable device. It should be understood that applying RF power to the Faraday shield while the Faraday shield is electrically floating may expand a process window associated with a workpiece processed by a plasma processing apparatus.

[0066] At (506), method 500 may include moving at least a portion of the configurable Faraday shield from a first position to a second position to couple the configurable Faraday shield to a RF ground plane such that the configurable Faraday shield is electrically grounded during a second portion (e.g., a plasma sustaining window) of a plasma treatment process (e.g., stripping, etching).

[0067] In some embodiments, moving at least a portion of a configurable Faraday shield from a first position to a second position may include moving a locking member of the configurable Faraday shield from the first position to the second position. For example, in some embodiments, moving the locking member from the first position to the second position may include moving (e.g., translating) the locking member along an axis and rotating the locking member about the axis. In some embodiments, rotating the locking member about the axis may occur simultaneously with moving the locking member along the axis.

[0068] In an alternative embodiment, moving at least a portion of the configurable Faraday shield from a first position to a second position may include moving the entire configurable Faraday shield along an axis (e.g., an axial direction) from the first position to the second position. For example, in some embodiments, a user may manually move the configurable Faraday shield from the first position to the second position. In an alternative embodiment, the configurable Faraday shield may be operably coupled to a motor such that the motor may be operated to move the configurable Faraday shield to the first position.

[0069] Although the subject matter has been described in detail with respect to specific exemplary embodiments of the subject matter, it should be understood that those skilled in the art can easily generate changes, variations, and equivalents of such embodiments after obtaining an understanding of the foregoing. Therefore, the scope of the present disclosure is by way of example rather than by way of limitation, and the subject disclosure does not exclude such modifications, variations, and / or additions to the subject matter, which are apparent to those of ordinary skill in the art.

Claims

1. A configurable Faraday shield, wherein the configurable Faraday shield defines an axial direction, a circumferential direction, and a radial direction, wherein the configurable Faraday shield include: a plurality of ribs, each of the ribs being spaced apart from each other along the circumferential direction, the plurality of ribs being coupled between a first RF ground plane and a second RF ground plane; a plurality of conductive strips; as well as A locking member is movable between at least a first position and a second position to selectively couple each of the plurality of ribs to the first radio frequency ground plane via a corresponding conductive strip of the plurality of conductive strips.

2. The configurable Faraday shield of claim 1, in, Each conductive strip of the plurality of conductive strips is coupled to a corresponding rib of the plurality of ribs.

3. The configurable Faraday shield of claim 1, in, The locking member rotates about the axial direction and translates along the axial direction to move between the first position and the second position.

4. The configurable Faraday shield of claim 1, in, Each of the plurality of conductive strips comprises: a first portion coupled to a corresponding rib of the plurality of ribs; a second portion curved relative to the first portion; and The third portion is bent relative to the second portion and is parallel to the first portion.

5. The configurable Faraday shield of claim 4, in, The second portion is bent at an angle greater than 90 degrees relative to the first portion.

6. The configurable Faraday shield of claim 4, in, At least one conductive strip of the plurality of conductive strips comprises beryllium copper.

7. The configurable Faraday shield of claim 4, in, The configurable Faraday shield further comprises: A dielectric spacer is positioned between the first RF ground plane and the plurality of ribs along the axial direction.

8. The configurable Faraday shield of claim 7, in, when the locking member is in the first position, each of the plurality of conductive straps is positioned within a corresponding notch of a plurality of notches defined by the locking member such that the plurality of conductive straps are spaced apart from the first RF ground plane; as well as When the locking member is in the second position, the locking member presses the third portion of each of the plurality of conductive straps against the first RF ground plane.

9. The configurable Faraday shield of claim 7, in, The locking member is in an intermediate third position, the locking member pressing the second portion of each of the plurality of conductive straps against the dielectric spacer.

10. The configurable Faraday shield of claim 1, in, The locking member includes a ring defining a plurality of notches.

11. A method of operating a configurable Faraday shield of a plasma processing apparatus, the method include: moving at least a portion of the configurable Faraday shield to a first position to decouple a plurality of ribs of the configurable Faraday shield from a first radio frequency ground plane such that the configurable Faraday shield electrically floats during a first portion of a plasma processing process for a workpiece disposed within a processing chamber of the plasma processing apparatus with the plurality of ribs coupled between the first radio frequency ground plane and a second radio frequency ground plane; applying radio frequency power to the configurable Faraday shield when the at least a portion of the configurable Faraday shield is in the first position; as well as The at least a portion of the configurable Faraday shield is moved from the first position to a second position to couple the configurable Faraday shield to the first RF ground plane such that the configurable Faraday shield is electrically grounded during a second portion of the plasma treatment process.

12. The method according to claim 11, in, The first portion includes a plasma strike window for the process; and The second portion includes a plasma sustaining window for the process.

13. The method according to claim 11, in, moving the at least a portion of the configurable Faraday shield to the first position comprises moving a locking member of the configurable Faraday shield to the first position to decouple the plurality of ribs of the configurable Faraday shield from the first RF ground plane; as well as Moving the at least a portion of the configurable Faraday shield from the first position to the second position includes moving the locking member of the configurable Faraday shield from the first position to the second position to couple the plurality of ribs to the first RF ground plane.

14. The method according to claim 13, in, Moving the locking member from the first position to the second position to couple the plurality of ribs to the first RF ground plane comprises: rotating the locking member about an axis; and The locking member is moved along the axis.

15. The method according to claim 14, in, Moving the locking member occurs simultaneously with rotating the locking member.

16. The method according to claim 11, in, Applying the radio frequency power to the configurable Faraday shield includes applying radio frequency power to capacitively couple the configurable Faraday shield to a frequency associated with an inductive coil surrounding the configurable Faraday shield.

17. A plasma processing device, include: Plasma chamber; an induction coil positioned outside the plasma chamber; as well as a configurable Faraday shield positioned outside the plasma chamber such that the Faraday shield is positioned between the induction coil and an outer surface of the plasma chamber, the configurable Faraday shield comprising a plurality of ribs, each of the ribs being spaced apart from one another, the plurality of ribs being coupled between a first RF ground plane and a second RF ground plane, At least a portion of the configurable Faraday shield is movable between at least a first position and a second position to selectively couple the configurable Faraday shield to the first radio frequency ground plane.

18. The plasma processing apparatus according to claim 17, in, The configurable Faraday shield further comprises: a plurality of conductive strips; and At least one locking member is movable between at least the first position and the second position to selectively couple each of the plurality of ribs to the first radio frequency ground plane via a corresponding conductive strip of the plurality of conductive strips.

19. The plasma processing apparatus according to claim 18, in, The at least one locking member comprises: a first locking member movable between at least the first position and the second position to selectively couple each of the plurality of ribs to the first RF ground plane; and A second locking member is movable between at least the first position and the second position to selectively couple each rib of the plurality of ribs to a second radio frequency ground plane.

20. The plasma processing apparatus according to claim 18, in, Each of the plurality of conductive strips is coupled to the locking member.

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