Sensor die package

Abstract

The present disclosure relates to a package that includes a transparent layer on and covering a sensor of a die and a plurality of electrical connectors extending from a first surface of the package to a second surface of the package opposite the first surface. In at least one embodiment of the package, each of the electrical connectors includes: a conductive structure extending through the transparent layer to a first side of a corresponding contact pad of the die; and at least one electrical via extending to a second side of the corresponding contact pad opposite the first side into a second surface of the die. In at least another embodiment of the package, the electrical connectors: include a conductive structure extending through a molding compound to a first side of a corresponding contact pad of the die; and at least one electrical via extending to a second side of the corresponding contact pad opposite the first side into a second surface of the die.

Description

Technical Field

[0001] The present disclosure relates to packages having sensor dies. Background Art

[0002] Typically, semiconductor device packages, such as chip scale packages, wafer level chip scale packages (WLCSPs), or wafer level packages (WLPs), include semiconductor devices, semiconductor dies, or integrated circuit dies encapsulated in molding compounds, polymers, sealants, etc. The semiconductor devices, semiconductor dies, or integrated circuit dies can be sensors configured to detect any number of quantities or qualities, or can be controllers utilized to control various other electronic components. For example, such semiconductor device packages can detect light, temperature, sound, pressure, stress, strain, or any other quantity or quality. Other semiconductor devices, semiconductor dies, or integrated circuit dies can be controllers, microprocessors, memories, or some other type of semiconductor device, semiconductor die, or integrated circuit die.

[0003] Conventional WLCSPs that detect light are formed to include conductive pads to which bonding materials are directly coupled so that the conventional WLCSPs can be mounted to electronic devices (e.g., laptops, smart phones, tablet computers, gaming consoles, calculators, computers, printed circuit boards (PCBs), etc.). Typically, the bonding materials are in the form of solder balls (e.g., ball grid arrays) and are located only on one side of the conventional WLCSP. On a second side of the conventional WLCSP, a transparent material covers the light sensor and exposes the light sensor to the external environment so that light passes through the transparent material and reaches the light sensor.

[0004] When the conventional WLCSPs are mounted within an electronic device or mounted to a PCB, the transparent materials of the conventional WLCSPs remain uncovered to expose the light sensors to light through the transparent materials. Since there are no electrical contacts or connectors on the second side of the conventional WLCSPs, other conventional packages cannot be stacked on or coupled to the second surface of the conventional WLCSPs. As such, a relatively large amount of space is provided within the electronic device to accommodate the conventional WLCSPs. Additionally, since other conventional packages cannot be stacked on the second side of the conventional WLCSPs, additional space is also provided to accommodate other conventional packages.

[0005] Typically, the electrical connection to the optical sensor formed in a traditional WLCSP is typically formed by wires, traces, or a combination of both. The wires or traces conduct electrical signals and electrical power from an external power source to the sensor die within the traditional WLCSP. As the length of the wires and traces increases, the resistance increases due to the increased distance of the wires and traces. As the length of the wires and traces increases, the distance that the electrical signal or electrical power travels to reach an active component (e.g., die) within the traditional WLCSP also increases. The increase in resistance and distance increases the total time that the electrical signal or electrical power must travel to reach the sensor die, which ultimately increases the impedance and parasitic inductance within the traditional WLCSP. The increase in impedance and parasitic inductance increases the amount of noise in the electrical signal or electrical power conducted through the wires and traces to the sensor die within the traditional WLCSP.

[0006] Other traditional packages that include an optical sensor include the interstitial ball grid array (iBGA) package, the optically enabled ball grid array (OBGA) package, the through-silicon via (TSV) package, and the CPACK package, which typically have solder balls or electrical contact pads (e.g., external electrical connections) only on the first side of the package. Summary of the Invention

[0007] Embodiments of the present disclosure overcome significant challenges associated with traditional WLCSPs that have an optical sensor and have solder balls only on one side, as discussed earlier. One significant challenge is to reduce the overall profile of the semiconductor device package while accommodating the WLCSP with an optical sensor and other packages within an electronic device or on a PCB.

[0008] Another significant challenge is to provide a WLCSP that has electrical connections of relatively short length within the WLCSP to reduce resistance, impedance, and parasitic inductance, and to reduce the impact of other potential power integrity issues within the WLCSP.

[0009] The present disclosure relates to various embodiments of a semiconductor device package that includes a first surface and a second surface opposite the first surface, at least one die within the package, and an electrical connection that extends from a first side of the package to a second side and also extends through the die.

[0010] In some embodiments of the encapsulation of the present disclosure, the die includes a photosensor covered and protected by a transparent material (e.g., transparent epoxy resin, transparent polymer, transparent glass, transparent substrate, etc.), and the transparent material allows light to be transmitted unobstructed from the external environment to the photosensor. The transparent material is located on the first surface of the die. The transparent material includes a plurality of sidewalls and a first dimension extending between opposite sidewalls among the plurality of sidewalls of the transparent material. The die includes a plurality of sidewalls and a second dimension extending between opposite sidewalls among the plurality of sidewalls of the die. The first dimension and the second dimension are substantially equal to each other, and the sidewalls among the plurality of sidewalls of the transparent material are aligned or coplanar with the corresponding sidewalls among the plurality of sidewalls of the die.

[0011] In some embodiments, the first dimension may be less than the second dimension. In these embodiments, the conductive structure extends from the contact pads of the die through the molding compound to the third surface of the molding compound. The conductive structure is laterally adjacent to the transparent material on the die, and the transparent material covers the photosensor of the die.

[0012] Through-silicon vias (TSVs) or electrical vias extend from the contact pads at the first surface of the die into the second surface of the die. The conductive structure extends from the contact pads to the third surface of the transparent material. The third surface faces away from the die. The TSVs, contact pads, and conductive structure form an electrical connection extending directly from the first surface of the package to the second surface of the package.

[0013] A method of manufacturing an electrical connection extending from the first surface of a package to the second surface of the package includes: forming a transparent material on the surface of a wafer and forming a conductive structure on the contact pads at the surface of the wafer. The method further includes: forming a plurality of dies by singulating the wafer, the transparent material, and the conductive structure. The method includes: coupling the plurality of dies to a temporary carrier; forming a molding compound covering the sidewalls of the plurality of dies; removing the molding compound and the plurality of dies from the temporary carrier; and flipping the molding compound and the plurality of dies. The method further includes: coupling the flipped molding compound and the plurality of dies to another temporary carrier; forming a plurality of through-silicon vias extending into the plurality of dies, and forming an embodiment of the WLCSP disclosed in the present disclosure by singulating the plurality of dies and the molding compound.

[0014] Embodiments of the WLCSP in the present disclosure do not have wires like traditional WLCSPs. Instead, in the WLCSP of the present disclosure, the length of the electrical connectors is relatively short compared to the wires and traces in traditional WLCSPs. This relative shortness reduces the resistance, impedance, and parasitic inductance within the WLCSP of the present disclosure. Compared to traditional WLCSPs, this reduction in these various characteristics reduces the impact of power integrity issues within the WLCSP of the present disclosure. Although this reduction in resistance, impedance, and parasitic inductance within a single WLCSP may seem relatively small within an electronic device that includes the WLCSP of the present disclosure as a whole, as the number of WLCSPs within or on the electronic device increases, the combined effect of these multiple WLCSPs due to power integrity issues and noise caused by the combination of WLCSPs within or on the electronic device increases significantly when using multiple traditional WLCSPs instead of embodiments of the WLCSP of the present disclosure.

[0015] The shorter the electrical connectors result in embodiments of the WLCSP of the present disclosure being thinner than traditional WLCSPs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] To better understand the embodiments, reference will now be made by way of example to the drawing information. In the drawings, like reference numerals identify similar elements or acts unless the context otherwise indicates. The sizes and relative proportions of the elements in the figures are not necessarily drawn to scale. For example, some of these elements may be enlarged and positioned to improve the readability of the drawing.

[0017] Figure 1A is a cross-sectional view of an embodiment of the package taken along line A-A in Figure 1B ;

[0018] Figure 1B is Figure 1A a top plan view of the embodiment of the package shown in

[0019] Figure 1C is Figure 1A and Figure 1B a bottom plan view of the embodiment of the package in

[0020] Figure 2A is a cross-sectional view of an alternative embodiment of the package taken along line B-B in Figure 2B ;

[0021] Figure 2B is Figure 2A a top plan view of the alternative embodiment of the package shown in

[0022] Figure 3 is for manufacturing Figures 1A to 1CFlowchart of an embodiment of a method of an encapsulated embodiment;

[0023] Figures 4A to 4K is along the same as Figure 1A Cross-sectional view taken along a line similar to line A-A in, illustrating the manufacture of Figures 1A to 1C Embodiment of a method of an encapsulated embodiment shown in;

[0024] Figure 5 Is a cross-sectional view of an alternative embodiment of the present disclosure;

[0025] Figure 6 Is the manufacture of Figure 2A and Figure 2B Flowchart of an embodiment of a method of an alternative encapsulated embodiment shown in;

[0026] Figures 7A to 7E is along the same as Figure 2A Cross-sectional view taken along a line similar to line B-B in, illustrating the manufacture of Figure 2A and Figure 2B Embodiment of a method of an alternative encapsulated embodiment shown in; and

[0027] Figure 8 Is a cross-sectional view of an alternative encapsulated embodiment. Detailed Description

[0028] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the various embodiments of the present disclosure. However, those skilled in the art will understand that the present disclosure may be practiced without these specific details. In other instances, well-known structures associated with electronic components and semiconductor fabrication techniques have not been described in detail to avoid unnecessarily obscuring the description of the embodiments of the present disclosure.

[0029] Unless the context otherwise requires, throughout the following specification and claims, the word "comprising" and its variations (such as "comprises" and "comprising") are to be interpreted in an open, inclusive sense, i.e., interpreted as "including but not limited to".

[0030] The use of ordinal numbers such as first, second, third, etc. does not necessarily imply a sense of ranking in order, but may only be used to distinguish between multiple instances of actions or similar structures or materials.

[0031] Throughout this specification, references to "one embodiment" or "an embodiment" mean that the particular features, structures, or characteristics described in connection with the embodiment are included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" throughout this specification are not necessarily all referring to the same embodiment. Additionally, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0032] The terms "left" and "right" are used only for the purpose of discussion of the orientation of components in the following discussion based on the figures in the present disclosure. These terms are not limited to the possible positions explicitly disclosed, implicitly disclosed, or inherently disclosed in the present disclosure.

[0033] The term "substantially" is used to clarify that there may be minor differences when manufacturing packages in the real world, as it is impossible to make anything exactly equal or identical. In other words, substantially means that there may be some minor variations in actual practice and that it is within an acceptable tolerance range.

[0034] As used in this specification and the appended claims, unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" include plural forms.

[0035] Although various embodiments are shown and described in connection with a semiconductor die and a semiconductor package having a light sensor, it will be readily understood that the embodiments of the present disclosure are not limited thereto. In various embodiments, the structures, devices, methods, etc. described herein may be embodied in or otherwise utilized with any suitable type or form of semiconductor die or package, and may be fabricated using any suitable semiconductor die and package technology as needed.

[0036] In the present disclosure, embodiments of a semiconductor package include a molding compound that covers sidewalls of a transparent material and sidewalls of a die. The package includes a first side and a second side opposite the first side, and an electrical connector that extends directly through the package from the first side to the second side. In other words, the electrical connector extends integrally and completely through the package from the first side to the second side opposite the first side. The transparent material may have a first dimension that extends between opposite sidewalls in the sidewalls of the transparent material, and the die may have a second dimension that extends between opposite sidewalls in the sidewalls of the die. In some embodiments, the first dimension is substantially equal to the second dimension such that some of the sidewalls in the sidewalls of the die are aligned with corresponding sidewalls in the sidewalls of the transparent material. In other embodiments, the first dimension is less than the second dimension such that some of the sidewalls in the sidewalls of the transparent material are spaced inwardly from some of the sidewalls in the sidewalls of the die.

[0037] Compared to traditional WLCSPs that use wires and traces to access electrical connectors within the traditional WLCSP as previously discussed, electrical connectors that pass through the package as a whole or completely from a first side of the package to a second side of the package reduce the impact of power integrity issues caused by resistance, impedance, and parasitic inductance within the WLCSPs described in this disclosure. The reduction in the impact of power integrity issues is at least partially due to the fact that the length of the electrical connectors within the WLCSPs in this disclosure is less than the length of the wires and traces combined with other electrical connection components within the traditional WLCSPs. Further details of this reduction in the impact of power integrity issues will be discussed in more detail within this disclosure below.

[0038] Figure 1A is a cross-sectional view of an embodiment taken along line A-A in Figure 1B package 80. Package 80 includes die 90, which includes a first surface 92 and a second surface 94 opposite the first surface 92, and a plurality of sidewalls 96 extending from the first surface 92 to the second surface 94. Die 90 includes a dimension D1 extending between opposing sidewalls among the plurality of sidewalls 96.

[0039] Die 90 includes a sensor 98 at the first surface 92 of die 90. For the purposes of this embodiment of package 80 and the following discussion, sensor 98 is a light sensor 98. However, in some other embodiments, sensor 98 may be a vibration sensor, a sound sensor, or some other sensor configured to detect a quantity or quality of the external environment other than light.

[0040] In this disclosure, sensor 98 will be referred to as light sensor 98. Light sensor 98 may be a pixel array, a photoresistor, a photodiode, a phototransistor, a microelectromechanical (MEMS) system, or some other type of sensor configured to detect light and output an electrical signal based on the detection. Light sensor 98 has a dimension D2 extending between opposing ends of light sensor 98.

[0041] A transparent layer 100 is located on the first surface 92 of die 90 and covers light sensor 98. Transparent layer 100 may be a transparent epoxy resin, a transparent polymer, transparent glass, a transparent substrate, a transparent portion, a transparent structure, or some other material through which light can pass to reach light sensor 98. Transparent layer 100 includes a surface 102 and a plurality of sidewalls 104 extending from the first surface 92 of die 90 to surface 102. The sidewalls among the plurality of sidewalls 104 of transparent layer 100 are aligned with corresponding sidewalls among the plurality of sidewalls 96 of die 90. Transparent layer 100 has a dimension D1 between opposing sidewalls among the plurality of sidewalls 104 of transparent layer 100.

[0042] The surface 102 of the transparent layer 100 has a first surface area that is substantially equal to a second surface area of the first surface 92 of the die 90. However, in some other embodiments, the first surface area of the surface 102 of the transparent layer 100 may be less than the second surface area of the first surface 92 of the die 90.

[0043] In some other embodiments, the dimension between opposite sidewalls among the plurality of sidewalls 104 of the transparent layer 100 may be less than the dimension between opposite sidewalls among the plurality of sidewalls 96 of the die 90.

[0044] The dimension D3 extends from the second surface 94 of the die 90 to the surface 102 of the transparent layer 100. The dimension D3 is substantially equal to the sum of the dimensions of the sidewalls 96, 104 of the die 90 and the transparent layer 100 that are parallel to the dimension D3.

[0045] The molding compound 106 covers the sidewalls 96, 104 of the die 90 and the transparent layer 100. The molding compound 106 can be an epoxy resin material, a polymer material, a composite material, a dielectric material, or some other non-conductive material or electrically insulating material. The molding compound 106 is an opaque material through which light cannot pass, instead, light can be reflected or absorbed by the opaque material. For example, the molding compound 106 can have a pigment such as carbon black pigment, which partially constitutes the composition of the molding compound to prevent light from passing through the molding compound 106. The molding compound 106 has a third surface 108 and a fourth surface 110 opposite to the third surface 108. The third surface 108 is substantially coplanar and flush with the second surface 94 of the die 90. The molding compound includes an inner sidewall 112 and an outer sidewall 114. The outer sidewall 114 partially forms the outer surface of the package 80 and is spaced farther from the center of the package 80 compared to the inner sidewall 112.

[0046] Dimension D4 extends from the third surface 108 of the molding compound 106 to the fourth surface 110. Dimension D4 is greater than dimension D3. This difference between dimension D4 and dimension D3 results in an edge portion 112a that protrudes and extends from the surface 102 of the transparent layer 100 at the inner sidewall 112 of the molding compound 106. The edge portion 112a at the inner sidewall 112 is not covered by the die 90 or the transparent material 100. Instead, the edge portion 112a is covered by a non-conductive layer 116 that is on the surface 102 of the transparent material 100 and on the fourth surface 110 of the molding compound 106. The edge portion 112a is adjacent to the edge of the surface 102 of the transparent portion 100, and the edge portion 112a causes the surface 102 of the transparent layer 100 to be recessed within the molding compound 106 of the package 80. The edge portion 112a at the inner sidewall 112 surrounds the transparent layer 100. The edge portion 112a may be referred to as an extension, a protrusion, an extended portion, a protruding portion, or some other reference to the portion that extends outwardly from the molding compound 106 and passes over the surface 102 of the transparent layer 100 to cause the surface 102 to be recessed within the molding compound 106.

[0047] In some embodiments, the edge portion 112a of the molding compound 106 is covered by the transparent layer 100 such that the fourth surface 110 of the molding compound 106 is substantially coplanar and flush with the surface 102 of the transparent layer 100, and dimension D4 is equal to dimension D3.

[0048] The non-conductive layer 116 can be a dielectric material, an insulating material, a passivation material, a re-passivation material, or some other non-conductive or electrically insulating material. The non-conductive material 116 partially covers the fourth surface 110 of the molding compound 106, leaving a region 118 of the fourth surface 110 exposed. The region 118 is directly adjacent to the outer sidewall 114 and is exposed to the external environment outside the package 80. The outer sidewall 114 of the molding compound 106 is spaced outwardly from the sidewall 120 of the non-conductive material 116. In this embodiment of the package 80, the outer sidewall 114 of the molding compound 106 partially forms or fully forms the sidewall of the package 80. The sidewall 120 can be the end of the non-conductive material 116 that is spaced inwardly from the sidewall 114 of the molding compound 106.

[0049] As Figure 1A and Figure 1BAs shown, the non-conductive material 116 only partially covers the fourth surface 110 of the molding compound 106. However, in some other embodiments, the non-conductive layer 116 may entirely cover the fourth surface 110 of the molding compound 106. In these other embodiments, the fourth surface 110 of the molding compound 106 is not exposed to the external environment outside the package 80. In these other embodiments, the outer sidewall 120 of the non-conductive layer 116 is aligned with the sidewall 114 of the molding compound 106. In other words, the sidewalls 120 and 114 are flush with and coplanar with each other, and the sidewalls 120, 114 form the sidewalls of the package 80.

[0050] The opening 122 in the non-conductive layer 116 is aligned with the transparent layer 100 and the light sensor 98. The opening 122 exposes an area of the surface 102 of the transparent layer 100, and the opening 122 divides the non-conductive layer 116 into a first portion 116a and a second portion 116b located on opposite sides of the opening 122. The first portion 116a includes an inner sidewall 124 on the surface 102 of the transparent layer 100, while the second portion 116b has an inner sidewall 126 that is spaced apart from and faces the inner sidewall 124 of the first portion 116a. The inner sidewalls 124, 126 of the first portion 116a and the second portion 116b are on the surface 102 of the transparent layer 100.

[0051] In some other embodiments, the non-conductive layer 116 may be continuous rather than divided into the first portion 116a and the second portion 116b. The continuous non-conductive layer 116 alternatively surrounds all sides of the opening 122. In other words, in these other embodiments, the non-conductive layer 116 forms a perimeter around the opening 122 and is a continuous portion, rather than Figure 1A and Figure 1B the first portion 116a and the second portion 116b which are shown as separate and distinct portions of the non-conductive layer 116.

[0052] The dimension D5 extends between the inner sidewalls 124, 126 of the first portion 116a and the second portion 116b of the non-conductive layer 116. The dimension D5 is less than the dimension D1 and greater than the dimension D2. The opening 122 in the non-conductive layer 116 has the dimension D5. The opening 122 having the dimension D5 that is greater than the dimension D2 and less than the dimension D1 allows light from the external environment outside the package 80 to pass through the transparent layer 100 and be directed to the light sensor 98, such that the light reaches the light sensor 98 without reflecting from other surfaces of the package 80.

[0053] The non-conductive layer 116 can be an opaque material similar to the molding compound 106 such that light cannot pass through the non-conductive layer 116. When the non-conductive layer 116 is opaque, light cannot pass through the non-conductive layer and can only pass through the opening 122 to reach the light sensor 98, such that the light entering the opening 122 and passing through the transparent layer 100 is directly focused on the light sensor 98.

[0054] The non-conductive layer 116 can be a single non-conductive layer or multiple stacked non-conductive layers, which can be a combination of various non-conductive passivation materials, non-conductive re-passivation materials, dielectric materials, insulating materials, or some other non-conductive materials, electrical insulating materials, or a stacked combination thereof.

[0055] The non-conductive layer 116 includes an outer surface 128 facing away from the die 90, the transparent layer 100, and the molding compound 106. A second portion 116b of the non-conductive layer 116 has a first thickness T1 and a second thickness T2 that are different from each other. The first thickness T1 extends from the surface 102 of the transparent layer 100 to the outer surface 128 of the non-conductive layer 116. The second thickness T2 extends from the fourth surface 110 of the molding compound 106 to the outer surface 128 of the non-conductive layer 116. The first thickness T1 is greater than the second thickness T2. As directly discussed above, a first portion 116a of the non-conductive layer 116 has a thickness that is the same as or similar to the first thickness T1 and the second thickness T2 discussed with respect to the second portion 116b of the non-conductive layer 116.

[0056] The die 90 includes a first contact pad 130 and a second contact pad 132 at a first surface 92 of the die 90. The first contact pad 130 is further away from the light sensor 98 than the second contact pad 132. The contact pads in the first contact pad 130 and the contact pads in the second contact pad 132 are coupled to the light sensor 98 and are in electrical communication with the light sensor 98. The first contact pad 130 is completely covered and overlapped by the non-conductive layer 116. As seen on the left hand side of the light sensor 98 in Figure 1A the contact pads in the second contact pad 132 are partially covered and partially overlapped by the non-conductive layer 116. As seen on the right hand side of the light sensor 98 in Figure 1A the contact pads in the second contact pad 132 are completely covered and completely overlapped by the non-conductive layer 116. This partial covering, partial overlapping, complete covering, and complete overlapping of the non-conductive layer 116 over the contact pads in the multiple second contact pads 132 can also be seen in Figure 1B the

[0057] Package 80 includes a conductive structure 134 extending into the surface 102 of the transparent layer 100. The conductive structure in the conductive structure 134 is on a first side of the contact pad in the plurality of first contact pads 130 and is coupled to the first side. The conductive structure 134 can be a conductive column, a conductive pillar, a conductive stub, or some other reference to a conductive structure. The conductive structure 134 extends from the first side of the contact pad in the first contact pad 130 into the non-conductive layer 116. The conductive structure 134 provides a circuit path through which electrical signals can be transmitted or conveyed to and from the die 90.

[0058] In some other embodiments, the conductive structure in the conductive structure 134 can be on a first side of the contact pad in the second contact pad 132 and coupled to the first side, or can be coupled to the first side of the contact pad in the first contact pad 130 and the first side of the contact pad in the second contact pad 132.

[0059] The redistribution layer (RDL) 136 is coupled to an end of the conductive structure 134 in the non-conductive layer 116. The RDL 136 can be a plurality of conductive layers (e.g., electrical traces, electrical connectors, electrical vias, etc.) that, in combination with the conductive structure 134, transmit electrical signals to and from the die 90. Based on Figure 1A the orientation of the package 80 in, the RDL 136 is entirely above the surface 102 of the transparent layer 100.

[0060] In some other embodiments, the RDL 136 can be partially above the surface 102 of the transparent layer 100 and partially above the fourth surface 110 of the molding compound 106. In other words, the RDL can partially overlap the surface 102 of the transparent layer 100 and partially overlap the fourth surface 110 of the molding compound 106.

[0061] A plurality of bonding pads 138 are located on the surface 128 of the non-conductive layer and extend into the non-conductive layer 116 towards the RDL 136. The plurality of bonding pads 138 are electrically coupled to the RDL 136. The plurality of bonding pads 138 can be a plurality of under bump metallizations (UBMs), a plurality of contact pads, a plurality of mounting pads, or some other type of conductive pads or conductive structures that can be utilized to electrically couple the package 80 to external electrical components.

[0062] A plurality of first solder balls 139 are located on the plurality of bonding pads 138 and are coupled to the plurality of bonding pads 138. The plurality of solder balls 139 can be made of a soldering material, a solder paste material, or some other conductive material or combination of conductive materials.

[0063] A plurality of through-silicon vias (TSVs) 140 extend into the second surface 94 of the die 90. The plurality of TSVs 140 can be a plurality of conductive layers extending into the second surface 94 of the die 90. The TSVs in the plurality of TSVs 140 are coupled to the second sides of the contact pads in the first contact pads 130 and the contact pads in the second contact pads 132. The TSVs 140 are in a non-conductive layer 142 extending into the second surface 94 of the die 90 and are surrounded by the non-conductive layer 142. The non-conductive layer 142 is also on the second surface 94 of the die 90 and the third surface 108 of the molding compound 106 and covers them. The non-conductive layer 142 can be the same as or similar to the non-conductive layer 116. The non-conductive layer 142 has an outer surface 143 facing away from the die 90, the transparent layer 100, the molding compound 106, and the non-conductive layer 116. The outer surface 143 partially constitutes the outer surface of an embodiment of the package 80 as shown in Figure 1A shown. Although the non-conductive layer 142 is shown as a single layer in Figure 1A , in some embodiments, the non-conductive layer 142 can be a plurality of non-conductive layers stacked on top of each other to help form the plurality of TSVs.

[0064] As shown in Figure 1A , the non-conductive layer 142 entirely or completely covers the third surface 108 of the molding compound 106. However, in some embodiments, the non-conductive layer 108 can only partially cover the third surface 108 of the molding compound 106. For example, the peripheral region of the third surface 108 of the molding compound 106 can be uncovered by the non-conductive layer 142 such that the peripheral region of the third surface 108 is exposed.

[0065] A plurality of second solder balls 144 are coupled to the exposed portions of the TSVs 140. The plurality of second solder balls 144 can be the same as or similar to the plurality of first solder balls 139. The plurality of second solder balls 144 function in the same or similar manner as the plurality of first solder balls 139. Therefore, for the sake of simplicity and conciseness of the present disclosure, further details regarding the second solder balls will not be discussed here.

[0066] Figure 1B is Figure 1A a top plan view of an embodiment of the package 80 as shown in Figure 1C and Figure 1A is a bottom plan view of an embodiment of the package 80 as shown in

[0067] Refer to Figure 1B, the region 118 not covered by the non-conductive layer 116 surrounds the first part 116a and the second part 116b of the non-conductive layer 116. In other words, the region 118 surrounds the entirety of the non-conductive layer 116. In some embodiments, the region 118 may consist of a plurality of regions that are separated from each other by the non-conductive layer 116 and are different. As Figure 1A and Figure 1B shown, the non-conductive layer 116 only partially covers the fourth surface 110, which exposes the region 118 of the fourth surface 110. However, in some embodiments, the non-conductive layer 116 may alternatively entirely cover the fourth surface 110 such that the region 118 of the fourth surface 110 is completely covered by the non-conductive layer 116.

[0068] Figure 2A relates to an alternative embodiment of the package 180. As Figure 2A shown, the package 180 includes features that are the same as or similar to those of the package 80 as Figure 1A shown. For the sake of simplicity and conciseness of the present disclosure, only the additional, different, or new features of the package 180 compared to the package 80 as Figures 1A to 1C shown will be discussed in further detail below.

[0069] The transparent layer 200 of the package 180 is similar to the transparent layer 100 of the package 80 as Figure 1A shown. However, different from the transparent layer 100 of the package 80, the transparent layer 200 of the package 180 has a dimension D6 that extends from opposite sidewalls among the plurality of sidewalls 204 of the transparent layer 200. The plurality of sidewalls 204 of the transparent layer 200 are on the first surface 192 of the die 190 and are spaced inwardly from the sidewalls 196 of the die 190. The dimension D6 of the transparent layer 200 is less than the dimension D1 of the die 190 such that the transparent layer 200 is positioned on the central region of the die 190. Compared with the dimension D1 of the die 190, the dimension D6 of the transparent layer 200 is numerically closer to the dimension D2 of the light sensor 98. The transparent layer includes a surface 216 that faces away from the die 190 and has the dimension D6.

[0070] The molding compound 206 of the package 180 is similar to the Figure 1AThe molding compound 106 of the package 80 as shown. However, different from the molding compound 106 of the package 80, the molding compound 206 of the package 180 is on the first surface 192 of the die 190 and partially covers the first surface 192, on the first contact pad 130 and covers the first contact pad 130, and on the second contact pad 132 and partially covers the second contact pad 132. The molding compound 206 extends outward and protrudes beyond the surface 216 of the transparent layer 200. The surface 216 of the transparent layer 200 is similar to the surface 102 of the transparent layer 100 of the package 80, but different from the surface 102 of the package 80, the surface 216 of the package 180 has a dimension D6. The molding compound 206 is on the sidewall 204 of the transparent layer 200 and entirely covers the sidewall 204. A portion 246 of the molding compound 206 is on the first surface 192 of the die 190 and has a third thickness T3 that extends from the first surface 192 of the die 190 to the surface 210 of the molding compound 206. The portion 246 can be referred to as an extended portion, a protruding portion, or some other type of portion of the molding compound 106 that is on the first surface 192 of the die. The surface 210 of the molding compound 206 of the package 180 is similar to the fourth surface 110 of the molding compound 106 of the package 80, but different from the fourth surface 110 of the package 80, the surface 210 of the package 180 extends above the first surface 192 of the die 190 and partially covers the first surface 192.

[0071] The surface 216 of the transparent layer 200 has a first surface area that is smaller than a second surface area of the first surface 192 of the die 190. In other words, the first surface area of the surface 216 is adapted to fit within the second surface area of the first surface 192 of the die 190.

[0072] A plurality of conductive structures 234 of the package 180 are similar to the conductive structures 134 of the package 80 as shown in Figure 1A However, different from the conductive structures 134 of the package 80, the conductive structures 234 of the package 180 extend into the molding compound 206 and pass through the molding compound 206 to reach a first side of the contact pads in the first contact pad 130. The conductive structures 234 are surrounded by and within a portion 246 of the molding compound 206 on the first surface 192 of the die 190.

[0073] A non-conductive layer 217 is on the surface 210 of the molding compound 206. The non-conductive layer 217 of the package 180 is similar to the one as shown in Figure 1AThe non-conductive layer 116 of the package 80 as shown. However, different from the non-conductive layer 116 of the package 80, the non-conductive layer 217 of the package 180 has a substantially uniform thickness along the entirety of the non-conductive layer 217, the non-conductive layer 217 is on the surface 210 of the molding compound 206, and the non-conductive layer 217 is not on the transparent layer 200.

[0074] The molding compound 206 includes sidewalls 212 that are the same as or similar to the sidewalls 112 discussed with respect to Figure 1A For simplicity and conciseness of the present disclosure, the discussion of the sidewalls 112 is not repeated here. However, different from the sidewalls 112 in Figure 1A , the sidewalls 212 are on the first surface 192 of the die 190.

[0075] The molding compound 206 includes an edge portion 212a that is the same as or similar to the edge portion 112a discussed with respect to Figure 1A For simplicity and conciseness of the present disclosure, the discussion of the edge portion 112a is not repeated here. However, different from the edge portion 112a in Figure 1A , the edge portion 212a is aligned with the sidewalls 212 on the first surface 192 of the die 190.

[0076] Although the bottom plan view of the package 180 is not shown, the bottom plan view of the package 180 appears to be the same as or similar to the bottom plan view of the package 80 as shown in Figure 1C . Thus, for simplicity and conciseness of the present disclosure, the discussion of the bottom plan view of the package 80 as shown in Figure 1C also applies to the bottom plan view of the package 180, even though the bottom plan view of the package 180 is not depicted or illustrated in the present disclosure.

[0077] Figure 3 is a flowchart of a preferred embodiment of a manufacturing method 300 of the package 80 as illustrated in Figures 1A to 1C . Figures 4A to 4K is a guiding step in an embodiment of a manufacturing method of the package 80 as shown in Figures 1A to 1C . The same or similar reference numerals for the package 80 in Figures 1A to 1C will be used to refer to the same or similar features during the manufacturing method 300 depicted in Figures 4A to 4K below.

[0078] As in Figure 3As shown, the steps under the title "Wafer Preparation" are part of the "Wafer Preparation" process, the steps under the title "Redistribution and Molding" are part of the "Redistribution and Molding" process, the steps under the title "Top-Side Fan-Out" are part of the "Top-Side Fan-Out" process, and the steps under the title "Back-Side TSV Process" are part of the "Back-Side TSV Process".

[0079] Although Figure 3 the flowcharts in Figures 1A to 1C are a preferred sequence of steps for forming the package 80 as illustrated in Figures 4A to 4K it will be readily understood that these steps can be reordered to form the package 80. It will also be readily understood that Figure 3 the simplified steps of the preferred embodiment involving the sequence of steps in Figure 3 Although these steps are discussed in the following specific order, these steps can be reordered to more closely align with the preferred embodiment shown in

[0080] Figure 4A The steps relate to a method 300 of manufacturing the package 80, wherein a transparent material 304 is formed on a substrate 306. The transparent material 304 is formed on a first surface 308 of the substrate 306. The transparent material 304 and the substrate 306 are utilized to form the die 90 and the transparent layer 100 of the package 80 as earlier discussed with respect to Figures 1A to 1C Figure 4A The steps in Figure 3 can be the "transparent material attachment and patterning" step during the "Wafer Preparation" process as shown in

[0081] The transparent material 304 can be formed by a sputtering technique, an injection molding technique, a compression molding technique, or some combination of suitable techniques for forming the transparent material 304 on the first surface 308 of the substrate 306. The first surface 308 is opposite to a second surface 310 of the substrate 306.

[0082] A sensor 312 and a plurality of contact pads 314a, 314b are located at the first surface 308 of the substrate 306. The sensor 312 is the same as or similar to the sensor 98 of the package 80 earlier discussed with respect to Figures 1A to 1C Figure 1CThe contact pads 130, 132 illustrated therein are the same or similar. The sensor 312 can be one of the sensors in a sensor array located at the first surface of the substrate 306, and the plurality of contact pads 314a, 314b can be contact pads in a contact pad array on the first surface 308 of the substrate 306. The first surface 308 can be the active surface of the substrate 306 and the second surface 310 can be the passive surface of the substrate 306.

[0083] After the transparent material 304 is formed on the first surface 308, a hard mask layer 316 is formed on the surface 318 of the transparent material 304 facing away from the substrate 306. The hard mask layer 316 can be formed by similar techniques utilized to form the transparent material 304, such as sputtering techniques, injection molding techniques, compression molding techniques, electroplating techniques, or some other suitable techniques for forming the hard mask layer 316.

[0084] After the hard mask layer 316 is formed to cover the surface 318, the hard mask layer 316 is patterned to expose the exposed area or portion of the surface 318 of the transparent material 304. These exposed areas are a piece, a part, or a partial surface area of the entire surface area constituting the surface 318.

[0085] The hard mask layer can be patterned by laser patterning techniques, etching patterning techniques, photolithography patterning techniques, or some other suitable patterning techniques for patterning the hard mask layer 316. For example, if the hard mask layer is formed by etching patterning techniques, the hard mask layer 316 is selectively exposed to a chemical etchant at certain positions to remove portions of the hard mask layer 316. These portions of the hard mask layer 316 exposed to the chemical etchant are removed, dissolved, or deteriorated to expose a partial surface area of the surface 318 of the transparent material 304.

[0086] After the hard mask layer is formed and patterned, an opening 320 is formed, extending to the surface 318 of the transparent material 304 from the first surface 308 of the substrate 306. The opening 320 extends through the transparent material 304 and the hard mask layer 316. The opening 320 exposes the first contact pad 314a among the plurality of contact pads 314a, 314b at the first surface 308, and the second contact pad 314b among the plurality of contact pads 314a, 314b remains covered by the transparent material 304. The first contact pad 314a among the contact pads 314a, 314b is farther from the sensor 312 than the second contact pad 314b among the contact pads 314a, 314b. The first contact pad 314a is the same or similar to the contact pad 130 of the package 80 discussed earlier with respect to Figures 1A to 1C The second contact pad 314b is the same as that discussed earlier with respect to Figures 1A to 1CThe contact pads 132 of the package 80 under discussion are the same or similar. The opening 320 can be a recess, a groove, a pore diameter, a cavity, or some other suitable structure for exposing the first contact pad 314a among the plurality of contact pads 314a, 314b.

[0087] The opening 320 can be formed by a laser drilling technique, a chemical etching technique, a water jet etching technique, or some other suitable technique for forming the opening 320 in the transparent material 304. For example, if the opening 320 is formed by a chemical etching technique, the chemical etchant is exposed to a partial surface area not covered by the hard mask layer 316, and the chemical etchant removes, dissolves, and deteriorates the portion of the transparent material 304 that forms the opening 320. The material for forming the opening 320 does not remove, dissolve, or deteriorate the hard mask layer 316.

[0088] After forming the opening 320 in the transparent layer 304 to expose the first contact pad 314a among the plurality of contact pads 314a, 314b, a plurality of conductive structures 322 or an array of conductive structures 322 are formed in the opening 320. The plurality of conductive structures 322 are the same or similar to the conductive structures 134 of the package 80 previously discussed with respect to Figures 1A to 1C The plurality of conductive structures 322 extend into the surface 318 of the transparent material 304. The conductive structures among the plurality of conductive structures 322 are coupled to the first contact pad 314a among the plurality of contact pads 314a, 314b.

[0089] In some other embodiments of the manufacturing method 300 of the package 80, the opening 320 extending into the transparent material 304 can be formed by an injection forming technique, wherein a molding tool (not shown) has a protruding portion that forms the opening 320 while forming the transparent material 304 on the first surface 308 of the substrate 306.

[0090] The plurality of conductive structures 322 can be formed by a sputtering technique, an electroplating technique, or some other suitable technique for forming the plurality of conductive structures 322 within the opening 320. For example, if the plurality of conductive structures are formed using an electroplating technique, the transparent material 304, the substrate 306, the hard mask layer 316, and the opening 320 are placed in an electrolytic solution (e.g., an electrolytic solution bath), and, upon completion of the electroplating or electrodeposition process, the conductive structures 322 are formed in the opening 320 and the conductive structures are coupled to the first contact pad 314a among the plurality of contact pads 314a, 314b.

[0091] After forming a plurality of conductive structures 322 in the opening 320 extending through the transparent material 304 and the hard mask layer 316, the hard mask layer 316 is removed. The hard mask layer 316 can be removed by chemical etching techniques, grinding techniques, or some other suitable techniques. If the hard mask layer 316 can be made of a material that deteriorates or dissolves when the hard mask layer 316 is exposed to light.

[0092] After removing the hard mask layer 316, the surface 318 of the transparent material 304 is uncovered and exposed, and each of the plurality of conductive structures 322 has an end surface 324 that is spaced apart from, separated from, and outward of the surface 318 of the transparent material 304. The end surface 324 is not flush and coplanar with the surface 318 of the transparent material 304.

[0093] Figure 4B Illustrated is the formation of a temporary protective layer 326 after removing the hard mask layer 316. The temporary protective layer 326 is formed on the surface 318 of the transparent material 304 and the end surfaces 324 of the plurality of conductive structures 322. The temporary protective layer 326 wholly or completely covers the surface 318 and the end surfaces 324. The temporary protective layer 326 can be a material that deteriorates when exposed to selected chemicals, water, heat, or some other suitable agents that dissolve, deteriorate, and remove the temporary protective layer 326 from the surface 318 and the end surfaces 324. This will be discussed in more detail later with respect to Figure 4E the deteriorating or dissolving characteristics of the temporary protective layer 326. Figure 4B The steps in can be Figure 3 a combination of the "copper pillar plating", "temporary protective layer on transparent material", and "singulation" steps during the "wafer preparation" process shown in.

[0094] After forming the temporary protective layer 326 on the surface 318 and the end surfaces 324, the transparent material 304, the substrate 306, and the temporary protective layer 326 are singulated at the location designated by the dashed line 328. The singulation process can be accomplished by a laser, saw, drill, or some other suitable singulation tool or technique. This singulation forms a plurality of die assemblies 330, which can be seen in subsequent Figure 4C s.

[0095] Figure 4C Illustrated is the coupling of the plurality of die assemblies 330 to a temporary carrier 332. Each of the plurality of die assemblies 330 includes a die 90, a sensor 98, contact pads 130, 132, a conductive structure 134, a transparent layer 100, and a temporary protective portion 338 that covers the end surfaces 324 of the transparent layer 100 and the conductive structure 134. Figure 4C The steps in can be as Figure 3The combination of the "die attach (silicon side) to temporary carrier" and "molding" steps during the "reconstruction and molding" process shown in

[0096] Each die assembly 330 in the plurality of die assemblies 330 coupled to the temporary carrier is spaced apart from each other in a similar array manner, and the die assemblies 330 are spaced apart from each other by a plurality of trenches (not shown). The plurality of die assemblies 330 may be coupled to the temporary carrier 332 by a temporary adhesive (such as a temporary die attach film, a temporary glue, or some other suitable temporary adhesive or temporary coupling technique). The temporary carrier 332 may be a polyimide tape, a dummy wafer, a dummy substrate, or some other suitable temporary carrier to which the plurality of die assemblies may be coupled.

[0097] After the plurality of die assemblies are coupled to the temporary carrier 332, a molding compound 334 is formed in the trenches between adjacent die assemblies in the die assemblies 330. The molding compound 334 completely covers the sidewalls 336 of the die assemblies 330. The sidewalls 336 of the die assemblies 330 are formed by the die 90, the transparent layer 100, and the temporary protection portion 338. The die 90, the transparent layer 100, and the temporary protection portion 338 are formed by a previous singulation process of singulating the substrate 306, the transparent material 304, and the temporary protection layer 326. The molding compound 334 has a surface 340 that is coplanar and flush with the surface 342 of the temporary protection portion 338. The surfaces 340, 342 face away from the temporary carrier 332 and are spaced apart from the temporary carrier 332.

[0098] The molding compound 334 may be formed by an injection molding technique, a compression molding technique, or some other suitable technique for forming the molding compound 334 in the trenches between adjacent die assemblies in the plurality of die assemblies 330 located on the temporary carrier 332. For example, if the molding compound is formed by an injection molding technique, the molding tool may be placed on the surface 342 of the temporary protection portion 338, and the molding compound 334 may be injected from the side opening of the trench to fill the trenches between adjacent die assemblies in the plurality of die assemblies 330. Then the molding compound 334 is allowed to cure and harden within the trench to cover the sidewalls 336 of the die assemblies 330, while leaving the surface 342 of the temporary protection portion 338 uncovered. Once the formation of the molding compound 334 is completed, the surface 340 of the molding compound 334 is substantially coplanar and substantially flush with the surface 342 of the temporary protection portion 338. The molding compound 334 is utilized to form the molding compound 106 of the package 80.

[0099] Figure 4D Illustrated is the removal of the molding compound 334 and the die assemblies 330 from the temporary carrier 332 and the grinding of the temporary protection portion 338 and the molding compound 334. Figure 4CThe steps in Figure 3 can be a combination of "carrier removal" and "top thinning / removal" steps during the "reconstruction and molding" process as shown in

[0100] The die assembly 330 and the molding compound 334 are removed from the temporary carrier 332. After the die assembly 330 and the molding compound 334 are removed from the temporary carrier 332, the die assembly 330 and the molding compound 334 are in the form of a wafer 344. After this removal process from the temporary carrier 332, the surfaces 340, 342 of the molding compound 334 and the temporary protection portion 338 are ground. These surfaces 340, 342 are ground by a grinding tool 346, which can be a diamond wheel. The grinding tool 346 moves along the surfaces 340, 342, grinding away material from the surfaces 340, 342 of the molding compound 334 and the temporary protection portion 338 respectively.

[0101] As Figure 4D shown, the grinding process partially grinds away the temporary protection layer 338 such that a portion of the temporary protection layer 338 remains on the transparent layer 100. However, in some embodiments, the grinding process can completely remove the temporary protection layer 338 to expose the surface 102 of the transparent layer 100. In other words, in some embodiments, the grinding process can completely remove the temporary protection layer 338 such that the end surface 324 of the conductive structure 134, the surface 102 of the transparent layer 100, and the surface 340 of the molding compound 334 are substantially flush and coplanar with each other.

[0102] In some embodiments, the grinding process accomplished using the grinding tool 346 can be accomplished by different processes and tools. For example, different processes can be an etching process using a chemical etchant, a polishing process using a polishing tool, a laser etching using a laser, or some other type of material removal process.

[0103] After the grinding process is accomplished using the grinding tool 346, the surfaces 340, 342 of the molding compound 334 and the temporary protection portion 338 are substantially coplanar and substantially flush with the end surface 324 of the conductive structure 134. The end surface 324 of the conductive structure 134 of the die assembly 330 is exposed from the temporary protection portion 338 that previously covered the end surface 324. In some other embodiments of the method of manufacturing the package 80, a laser tool can be used instead of the grinding tool 346 to partially and selectively remove portions of the molding compound 334 and portions of the temporary protection portion 338. For example, similar to using the grinding tool, the laser can move along the surfaces 340, 342 to dissolve or remove portions of the molding compound 334 and portions of the temporary protection portion 338.

[0104] Figure 4EIllustrated is the removal of the temporary protection portion from the surface 102 of the transparent layer 100 of the die assembly 330. Since the temporary protection portion 338 is formed by the temporary protection layer 326, the temporary protection portion 338 is made of the same material as the temporary protection layer and can be a material that deteriorates when exposed to selected chemicals, water, heat, or some other suitable characteristics that dissolve, deteriorate, and remove the temporary protection layer 326 from the surface 318 and the end surface 324. For example, if the temporary protection portion 338 is made of a material that deteriorates when exposed to a temperature above a threshold, the temporary protection portion 338 can be dissolved or deteriorated by exposing the temporary protection portion 338 to a temperature above the threshold to be removed from the surface 102 of the transparent layer 100 of the die assembly 330. After removing the temporary protection portion 338, the molding compound 334 includes a plurality of edge portions 112a that extend and protrude away from the surface 102 of the transparent layer 100, and the conductive structure 134 of the die assembly 330 extends and protrudes away from the surface 102 of the transparent layer 100. Figure 4E The steps in Figure 3 can be the "optional temporary protection layer removal" step during the "reconstruction and molding" process as shown in

[0105] In some embodiments, the temporary protection layer 338 is completely removed by a grinding process as shown in Figure 4D . When the temporary protection layer 338 is completely removed by the grinding process, Figure 4E the steps in Figure 4D are no longer necessary because no part of the temporary protection layer 338 is located on the surface 102 of the temporary layer 100. Instead, the surface 102 of the transparent layer 100 is exposed by completely removing the temporary protection layer 338 during the grinding process as shown in Figure 4D . In these embodiments, the surface 102 of the transparent layer 100 is substantially coplanar and flush with the end surface 324 of the conductive structure 134 and the surface 340 of the molding compound 334.

[0106] Figure 4F Illustrated is the formation of a plurality of non-conductive layers 348 and a plurality of conductive layers 350. The plurality of non-conductive layers 348 are utilized to form a plurality of non-conductive layers 116, and the plurality of conductive layers 350 are utilized to form the RDL 136. The plurality of non-conductive layers 348 can be formed by sputtering techniques, injection molding techniques, or some other suitable deposition techniques. The non-conductive layers among the plurality of non-conductive layers 348 are patterned and conductive layers are formed in the patterned non-conductive layers 348. The plurality of non-conductive layers 348 and the plurality of conductive layers 350 are formed sequentially and simultaneously based on the stacking orientation of the non-conductive layers 348 and the conductive layers 350. Figure 4F The steps in Figure 3The combination of the "re-passivation-1", "RDL patterning and plating", and "re-passivation-2" steps during the "top-side fan-out" process shown in

[0107] A plurality of first bonding pads 352 are formed to extend into the non-conductive layer 348 and are electrically coupled to the conductive layer 350. The conductive layer 350 electrically couples the first bonding pads 352 to the conductive structure 134. The bonding pads 352 are the same or similar to the bonding pads 138. Some of the first bonding pads 352 may be under-bump metallization (UBM). The plurality of first bonding pads 352 are on the surface 354 of the non-conductive layer 348 facing away from the sensor 98.

[0108] After forming the plurality of non-conductive layers 348 and conductive layers 350, the plurality of non-conductive layers 348 are patterned to form openings 356 aligned with corresponding sensors in the sensor 98. The openings 356 can be formed in a similar manner as the openings 320 discussed earlier with respect to Figure 4A Alternatively, the openings 356 can be formed while forming the non-conductive layers 348 and conductive layers 350 such that the non-conductive layers 348 and conductive layers 350 are not formed at these positions aligned with the sensor 98 to form the openings 356. The openings 356 are the same or similar to the openings 122 discussed with respect to Figure 1A

[0109] A plurality of second bonding pads 353 are formed in a manner similar to the bonding pads 352. However, the second bonding pads 353 are spaced farther from the openings 356 compared to the first bonding pads 352. The plurality of second bonding pads 353 may be coupled to other electrical traces and electrical connectors within the non-conductive layer 348, although these electrical traces and electrical connectors are not shown in Figure 4F

[0110] Figure 4G Illustrated is the formation of a plurality of solder balls 357 on the first bonding pads 352. The plurality of solder balls 357 are the same or similar to the solder balls 139 discussed with respect to Figure 1A The plurality of solder balls 357 can be formed by a solder ball reflow technique or some other suitable technique for forming solder balls 356 on the first bonding pads 352. Figure 4G The steps in Figure 3 can be the "BGA" step during the "top-side fan-out" process as shown in

[0111] Figure 4HIllustrated is flipping the wafer 344 and coupling the flipped wafer 344 to the temporary carrier 358 by means of the adhesive 360 on the temporary carrier 358. The temporary carrier 358 is the same as or similar to the temporary carrier 332. The solder balls 356 and the non-conductive layer 348 are located on and within the adhesive 360. The wafer 344 can be flipped by using flip-chip technology of a pick-and-place machine or can be flipped by using some other suitable technology for flipping the wafer 344. The wafer 344 can be coupled to the adhesive 360 by using a pick-and-place machine or by means of some other suitable technology for the adhesive 360 that couples the wafer 344 to the temporary carrier 358. Figure 4H The step in Figure 3 can be the "top-side tape lamination" step during the "top-side fan-out" process as shown in

[0112] Figure 4I Illustrated is forming an opening 361 that extends into and through each die 90 of the wafer 344 to a corresponding contact pad in the contact pads 130 of each die 90. The opening 361 can be formed in the same or similar manner as the formation of the opening 320 discussed with respect to Figure 4A . The opening 361 exposes a second side of the contact pad 130, which is opposite to the first side of the contact pad exposed by the opening 320 as discussed with respect to Figure 1A . Figure 4I The step in Figure 3 can be the "TSV patterning and silicon etching" step during the "back-side TSV process" as shown in

[0113] Figure 4J Illustrated is forming a plurality of electrical vias or traces 364 at and within the non-conductive layer 362 in the opening 361 and on the die 90 and the molding 334. The non-conductive layer 362 and the electrical vias 364 are formed in the same manner as the non-conductive layer 348 and the conductive layer 350 discussed with respect to Figure 4G . After forming the non-conductive layer 362 and the electrical vias 364, the non-conductive layer 362 is patterned to form an opening 361 that exposes a portion of the electrical vias 364. The opening 361 is formed in the same or similar manner as the opening 320 discussed with respect to Figure 1A . The non-conductive layer 362 is the same as or similar to the non-conductive layer 142, and the electrical vias 364 are the same as or similar to the electrical vias 140. Figure 4J The step in Figure 3 can be a combination of the "re-passivation-1", "RDL patterning and plating", and "re-passivation-2 (optional)" steps during the "back-side TSV process" as shown in

[0114] In some embodiments, with respect to the "backside TSV process", the optional "re-passivation-2" step and the optional "UBM patterning and plating" step shown in Figure 3 are performed. In the optional "re-passivation-2" step, at least one additional non-conductive layer may be formed on the non-conductive layer 362. Then, openings are used to pattern the at least one additional non-conductive layer. The discussion of the optional "re-passivation-2" step also applies to the optional "re-passivation-2" step shown in Figure 6 .

[0115] After completion of the optional "re-passivation-2" step, the optional "UBM patterning and plating" step is performed with respect to the "backside TSV process". In the optional "UBM patterning and plating" step, the openings in the at least one additional non-conductive layer are filled with a conductive material to couple the conductive material to the TSV 140. The conductive material may be formed in the openings by an electroplating process. The conductive material forms an under bump metallization (UBM) that couples to the TSV 140. The discussion of the optional "UBM patterning and plating step" also applies to the optional "re-passivation-2" step shown in Figure 6 .

[0116] Figure 4K illustrates forming a plurality of solder balls 368 in the openings 366 and electrically coupling the plurality of solder balls 368 to the electrical vias 364. The plurality of solder balls 368 are formed in the same or a similar manner as the solder balls 357 discussed with respect to Figure 4G . However, different from the plurality of solder balls 357, the plurality of solder balls 368 are smaller relative to the solder balls 356 formed on the opposite side of the wafer 344. Figure 4K The steps in Figure 3 may be a combination of the "BGA" and "final singulation" steps during the "backside TSV process" shown in

[0117] After forming the solder balls 368, the wafer 344 is singulated at the location designated by the dashed line 370 to form the package 80, which may be removed from the adhesive 360 on the temporary carrier 358.

[0118] In some other embodiments of the method of manufacturing the package 80, the solder balls 356, 368 as discussed with respect to Figure 4G and 4K may not be formed, but rather the solder balls 356, 368 may be attached to the package 80 after the package 80 has been singulated.

[0119] In some embodiments of the method of manufacturing the package 80, as described above with respect to Figure 3 and Figure 4A to Figure 4KAs discussed, the removal of the temporary layer 334 can occur at different times in methods such as Figure 3 and Figures 4A to 4K as shown.

[0120] In some embodiments, the temporary protective layer 338 may not be completely removed during the steps classified as "wafer preparation" as shown in Figure 3 but rather until one of the steps during the "top-side fan-out" step. For example, it can be removed during any one of the steps of the "top-side fan-out" process (e.g., "re-passivation-1", "RDL patterning and plating", "re-passivation-2", "UBM patterning and plating", "BGA", or "top-side tape lamination" of the "top-side fan-out" process as shown in Figure 3 ). For example, different from Figure 4D where the remaining portion of the temporary protective layer 338 after the grinding process as shown in Figure 4E is removed, in some embodiments, the remaining portion of the temporary protective layer 338 after the grinding process can instead be removed later during one of the steps of the "top-side fan-out". In other words, the removal of the remaining portion after the grinding process illustrated by the "removal of the temporary protective layer" in the "reconstruction and molding" step in Figure 3 is optional so that this process can be performed at a later time during the "top-side fan-out" step.

[0121] Figure 5 Alternative embodiments related to alternative packages. Different from package 80, the plurality of conductive structures 372 have end surfaces 374 flush with the surface 376 of the transparent layer 378. In this alternative embodiment, the end surfaces 374 of the conductive structures 372 of the completed package will be spaced apart from the surface 376 of the transparent layer 378, and instead, the end surfaces 374 of the conductive structures 372 will remain substantially coplanar and substantially flush throughout the formation of the completed package and will be substantially flush and coplanar in the completed package.

[0122] Figure 6 is a flowchart of a preferred embodiment of the manufacturing method 400 of the package 180 as illustrated in Figure 2A and Figure 2B . Figures 7A to 7E Relates to steps in an embodiment of the manufacturing method of the package 180 as shown in Figure 2A and Figure 2B . The same or similar reference numerals for the package 180 in Figure 2A and Figure 2B will be used to refer to the same or similar features during the manufacturing method 400 depicted in Figures 7A to 7E .

[0123] As Figure 6 shown, the steps under the title "Wafer Preparation" are part of the "Wafer Preparation" process, the steps under the title "Redistribution and Molding" are part of the "Redistribution and Molding" process, the steps under the title "Top-Side Fan-Out" are part of the "Top-Side Fan-Out" process, and the steps under the title "Back-Side TSV Process" are part of the "Back-Side TSV Process".

[0124] Although Figure 6 the flowchart in Figure 2A and Figure 2B shows the preferred order of steps for forming the package 180 as shown in Figures 7A to 7E and Figure 6 It will be readily understood that these steps can be reordered to form the package 180. It will also be readily understood that

[0125] Figure 7A relates to the steps of the method 400 for manufacturing the package 180, where the transparent portion 402 is formed on the surface 404 of the substrate 406. The transparent portion 402 can be formed in the same or a similar manner as the transparent layer 304 discussed with respect to Figure 4A . Alternatively, the transparent portion 402 can be pre-formed and coupled to the surface 404 of the substrate 406 by a transparent adhesive. The transparent portion 402 is on the sensor 408, and the sensor 408 is located at the first surface 404 of the substrate 406. The transparent portion 402 is one of an array of transparent portions 402 on the substrate 406, and the sensor 408 is one of an array of sensors 408 located at the surface of the substrate 406. The transparent portions in the array of transparent portions 402 are on the sensors in the array of sensors 408. For example, each transparent portion 402 of the array of transparent portions 402 is on the corresponding sensor 408 in the array of sensors 408. The substrate 406 is utilized to form the die 190 in the package 180, and the transparent portion 402 on the substrate 406 is the same or similar to the transparent layer 200 discussed with respect to the package 180 in Figure 2A . The sensor 408 is the same or similar to the sensor 98 of the die 90 of the package 180 as shown in Figure 2A and Figure 7A The steps in Figure 6 can be the "Attaching and Patterning of Transparent Material" step during the "Wafer Preparation" process as shown in

[0126] The transparent portion 402 is formed on the surface 404 of the substrate 406 at a region of the surface 404 where there is no contact pad among the plurality of contact pads 410. The plurality of contact pads 410 are at the surface 404. The plurality of contact pads 410 are the same as or similar to the contact pads 130, 132 of the package 180 as shown in Figure 2A the figure.

[0127] Figure 7B It is illustrated that a temporary layer 412 is formed on the surface 404 of the substrate 406 and on the surface 413 of the transparent portion 402. The temporary layer covers the surface 413 of the transparent portion 402, the sidewalls 415 of the transparent portion 402, and the sidewalls of the conductive structure 416. The temporary layer 412 is patterned to have openings, and a conductive structure 414 is formed within the openings. The openings are aligned with and expose the contact pads among the contact pads 410 such that the conductive structure 414 is coupled to the contact pads among the contact pads 410. In a manner the same as or similar to that of Figure 4B the openings 320 discussed. The openings patterned in the temporary layer 412 are formed in a manner the same as or similar to that of Figure 4B the conductive structure 322 discussed. The conductive structure 414 is formed in the openings in the temporary layer 412 in a manner the same as or similar to that of Figure 2A the conductive structure 234 of the package 180 in Figure 7B the figure. The steps in Figure 6 may be the "copper pillar patterning and electroplating" step during the "wafer preparation" process as shown in

[0128] The temporary layer 412 may be a material that deteriorates when exposed to selected chemicals, water, heat, or some other suitable characteristics that dissolve, deteriorate, and remove the temporary layer 412 from the surface 404 of the substrate 406 and from the sidewalls 416 of the conductive structure 414 after the formation of the conductive structure 414.

[0129] Figure 7C It is illustrated that the temporary layer 412 is removed, and then a temporary protective layer 419 is formed on the surface 413 of the transparent portion 402. For example, if the temporary layer is a material that dissolves and deteriorates when exposed to water, the temporary layer 412 is exposed to water and the temporary layer 412 dissolves and deteriorates such that the temporary layer 412 is removed from the sidewalls 415, 416 of the conductive structure 414 and the transparent portion 402 respectively, and is removed from the surface 413 of the transparent portion 402. The removal of the temporary layer 412 exposes the sidewalls 415 of the conductive structure 414, the sidewalls 416 of the substrate 406, and the first surface 404 of the substrate 406. Figure 7C The steps in Figure 6The combination of the "temporary protective layer on the transparent material" and the "singulation" steps during the "wafer preparation" process shown. However, it will be readily understood that although the formation of the temporary protective layer is shown after the conductive structure 414 in Figure 7B in some embodiments, the temporary protective layer 419 may be formed before the conductive structure in the step sequence shown in Figure 6 .

[0130] After removing the temporary layer 412, a temporary protective layer 419 is formed on the surface 413 of the transparent portion 402. The temporary protective layer 419 can be formed using sputtering techniques or some other suitable deposition techniques for forming the temporary protective layer 419 on the surface 413 of the transparent portion 402. The temporary protective layer 419 includes sidewalls 421 that are substantially coplanar and flush with the sidewalls in the sidewalls 415 of the transparent portion 402.

[0131] The temporary protective layer 419 can be a material that deteriorates when exposed to selected chemicals, water, heat, or some other suitable agents that dissolve, deteriorate, and remove the temporary protective layer 419 from the surface 413 of the transparent portion 402.

[0132] After forming the temporary protective layer 419 on the surface 413 of the transparent portion 402, the substrate 406, the transparent portion 402, and the conductive structure are singulated into die assemblies 422 at the location specified by the dashed line 420. The singulation step is completed in the same or a similar manner as the singulation step discussed with respect to Figure 4B .

[0133] Figure 7D Illustrated is the coupling of the die assemblies 422 to the temporary carrier 424. The die assemblies 422 are spaced apart from each other and trenches are placed between adjacent die assemblies in the die assemblies 422. After the die assemblies 422 are coupled to the temporary carrier 424, a molding compound 426 is formed in the trenches between the die assemblies 422. The molding compound 426 covers the sidewalls 416 of the conductive structures 234 of the die assemblies 422, the sidewalls 196 of the dies 190 of the die assemblies 422, and the sidewalls 421 of the temporary protective layer 419. The end surfaces 431 of the conductive structures 234 and the surface 427 of the temporary protective layer 419 are substantially coplanar and flush with the surface 429 of the molding compound 426. The end surfaces 431 of the conductive structures 234 are transverse to the sidewalls 416 of the conductive structures. The surface 427 of the temporary protective layer 419 is transverse to the sidewalls 421 of the temporary protective layer. Figure 7D The steps in Figure 6 can be a combination of the "die attach (silicon side) to the temporary carrier" and the "molding" steps during the "reconstruction and molding" process shown in

[0134] The wire assembly in the die assembly 422 includes a die 190, a transparent layer 200, and a conductive structure 234, as shown in the complete package 180 shown in Figure 2A As previously discussed, the die 190 is formed using a substrate 406, the transparent portion 402 is the same as or similar to the transparent layer 200, and the conductive structure 414 is the same as or similar to the conductive structure 234.

[0135] The temporary protective layer 418 has a surface 427 that is substantially coplanar and flush with the surface 429 of the molding compound 426. The end surfaces 431 of the conductive structure or all of the conductive structures in the plurality of conductive structures 234 are substantially coplanar and flush with the surfaces 427 and 429 of the temporary protective layer 418 and the molding compound 426, respectively.

[0136] Figure 7E The removal of the temporary protective layer 419 on the transparent layer 200 is illustrated, exposing the surface 216 of the transparent layer. For example, if the temporary protective layer 419 is a material that dissolves and deteriorates when exposed to water, the temporary protective layer 419 is exposed to water and the temporary layer 419 dissolves and deteriorates so that the surface 413 of the transparent portion 402 is uncovered and exposed. Figure 7E The steps in can be the "optional removal of the temporary protective layer" step during the "reconstruction and molding" process as shown in Figure 6 The steps in the "reconstruction and molding" process as shown in Figure 6 .

[0137] In some embodiments, instead of completely removing the temporary protective layer 419 by dissolution, the temporary protective layer 419 can be only partially removed by a grinding process similar to the grinding process shown in Figure 4D shown for the manufacture of the package 80. For example, after this grinding process, a portion of the temporary protective layer 419 can remain, and the remaining portion in the temporary protective layer 419 can be directly removed in a manner similar to that discussed with respect to Figure 7E or can be removed later during one of the steps in the steps under the "top-side fan-out" step as shown in Figure 6 shown in Figure 6 .

[0138] After removing the temporary protective layer, the manufacturing method 400 follows steps similar to or the same as the steps depicted in Figures 4D to 4K to manufacture the package 180. For the sake of simplicity and conciseness of the present disclosure, these steps for manufacturing the package 180 will not be discussed in further detail.

[0139] In some embodiments of the method of manufacturing the package 180, as discussed above with respect to Figure 6 and Figure 7A to Figure 7E the removal of the temporary layer 334 can be during as shown in Figure 6 andFigures 7A to 7E occur at different times of the method shown.

[0140] In some embodiments, the temporary protective layer 419 may not be removed during the steps that remain after the steps shown in Figure 7D but until one of the steps during the "top-side fan-out" step. For example, it may be removed during any of the steps of the "top-side fan-out" process (e.g., "re-passivation-1", "RDL patterning and plating", "re-passivation-2", "UBM patterning and plating", "BGA", or "top-side tape lamination" of the "top-side fan-out" process as shown in Figure 6 Figure 3 Figure 7E Figure 7E Figure 7D the temporary protective layer 419 in the steps of Figure 6

[0141] Figure 8 are steps in an alternative embodiment of a method of manufacturing an alternative embodiment of an encapsulation, where the conductive structure 502 has an end surface 504 that is substantially coplanar and substantially flush with the surface 506 of the molding compound 508 and the surface 510 of the transparent portion 512. By not including the temporary protective layer 419 as illustrated in Figure 7C Figures 4D to 4K Figures 2A to 2B an alternative embodiment of an encapsulation similar to the encapsulation 180 shown in

[0142] For example, to provide the structure shown in Figure 8 Figure 7D Figure 4D the temporary protective layer 419 as shown in Figure 4D ​​​​​​​​​In contrast, the temporary protective layer 419 is completely removed through a grinding process. Since the temporary protective layer 419 is completely removed during the grinding process, the end surface 504 of the conductive structure 502 is exposed, and the end surface 504 of the conductive structure 502, the surface 506 of the molding compound 508, and the surface of the transparent layer 510 are substantially coplanar and flush with each other.

[0143] In view of the above discussion, embodiments of the WLCSP within the present disclosure do not have wires similar to those of conventional WLCSPs. Instead, in the WLCSP of the present disclosure, the lengths of the electrical connectors (e.g., the conductive structures of the die, electrical vias, and contact pads) are relatively short compared to the wires and traces in conventional WLCSPs. This relative shortness of the electrical connectors within the WLCSP disclosed herein reduces the resistance, impedance, and parasitic inductance within the WLCSP of the present disclosure. Compared to conventional WLCSPs, this reduction in these various characteristics reduces the impact on power integrity issues within the WLCSP of the present disclosure. Although the reduction in resistance, impedance, and parasitic inductance within a single WLCSP may seem relatively small within an electronic device that includes the WLCSPs of the present disclosure as a whole, as the number of WLCSPs within the electronic device or on a PCB increases, when multiple conventional WLCSPs are used in place of embodiments of the WLCSP of the present disclosure, the combined effect of these multiple WLCSPs due to power integrity issues and the noise caused by the combination of WLCSPs within the electronic device or on a PCB increases significantly.

[0144] Furthermore, since embodiments of the WLCSP of the present disclosure do not include wires similar to those of conventional WLCSPs, the embodiments of the WLCSP have a relatively smaller thickness compared to conventional WLCSPs with wires. Different from the wires that occupy a large amount of space within the package and cannot be used for other features, the embodiments of the WLCSP have electrical connectors and electrical vias. The electrical connectors are formed by electrically coupling the conductive structures extending into the first side of the package to the first side of the contact pads of the die, and the electrical vias extend from the first side of the contact pads of the die opposite to the first side to the second side of the package opposite to the first side of the package. These electrical connectors in the embodiments of the WLCSP of the present disclosure directly extend through the WLCSP and directly extend through the die. Therefore, with respect to the electrical connectors of the embodiments of the WLCSP that directly extend through the die and the package, the amount of space provided for forming wires within the package is larger, which results in the embodiments of the WLCSP having a relatively smaller thickness compared to conventional WLCSPs with wires.

[0145] In view of the foregoing discussion of the present disclosure, conventional WLCSPs with wires and optical sensors generally cannot be stacked because conventional WLCSPs with wires do not have exposed electrical bonding pads on both sides of the conventional WLCSP. Different from conventional WLCSPs, embodiments of the WLCSP of the present disclosure have electrical bonding pads (e.g., exposed contact pads, under bump metallization (UBM), etc.) available on both sides of the embodiments of the WLCSP, which allows WLCSPs with optical sensors to be utilized in a stacked form with other WLCSPs.

[0146] The various embodiments described above can be combined to provide other embodiments. All U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications, and non-patent publications mentioned in this specification and / or listed in the application data sheet are hereby incorporated by reference in their entirety. Aspects of the embodiments may be modified if necessary to employ concepts of various patents, applications, and publications to provide further embodiments.

[0147] In view of the foregoing detailed description, these and other changes may be made to the embodiments. In general, in the following claims, the terms used should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be construed to include all possible embodiments and the full scope of equivalents to which these claims are entitled. Accordingly, the claims are not limited by the present disclosure.

Claims

1. A device, comprising: A die, comprising: A sensor on a first surface of the die; A first contact pad adjacent to the sensor, and A second contact pad further from the sensor than the first contact pad; A transparent layer on the first surface of the die, the transparent layer having: An outer-facing surface opposite the first surface of the die; and A first sidewall transverse to the outer-facing surface; A molding compound surrounding the die and the transparent layer, the molding compound having an outer surface further from the sensor than the outer-facing surface of the transparent layer, and the first sidewall of the transparent layer contacting the molding compound; A non-conductive layer comprising a plurality of stacked non-conductive layers; the non-conductive layer having: A second surface coplanar with the molding compound; A third surface coplanar with the transparent layer; A fourth surface opposite the second surface and the third surface; A first thickness between the second surface and the fourth surface; and A second thickness between the third surface and the fourth surface, the first thickness being less than the second thickness; and A conductive structure extending from the second contact pad through the transparent layer to the non-conductive layer.

2. The device according to claim 1, further comprising: A conductive layer extending through the non-conductive layer and coupled to the plurality of non-conductive layers of the conductive structure, the conductive layer overlapping the outer-facing surface of the transparent layer, the non-conductive layer partially covering the outer-facing surface of the transparent layer and being on the outer surface of the molding compound.

3. The device according to claim 2, further comprising a bonding pad coupled to the conductive layer, the bonding pad overlapping the outer-facing surface of the transparent layer.

4. The device according to claim 2, further comprising an opening in the plurality of non-conductive layers, the opening partially exposing the outer-facing surface of the transparent layer.

5. The device according to claim 1, wherein the transparent layer and the die comprise: A first dimension extending from a first inner sidewall of the molding compound to a second inner sidewall of the molding compound opposite the first inner sidewall.

6. The device according to claim 1, wherein it further comprises a conductive layer extending into a fifth surface of the die, the fifth surface of the die being opposite the first surface of the die, the conductive layer being coupled to the second contact pad.

7. A device, comprising: A die, the die comprising: A first surface and a second surface opposite the first surface; A plurality of first sidewalls extending from the first surface to the second surface; A sensor at the first surface, the sensor having a first dimension extending in a first direction transverse to the plurality of first sidewalls; and A conductive pad at the first surface; A transparent layer on the first surface, the transparent layer having a second dimension extending in the first direction, the second dimension being greater than the first dimension, and the transparent layer having a plurality of second sidewalls; The molding compound is on multiple first sidewalls of the die and on the multiple second sides of the transparent layer; A non-conductive layer is located on and coplanar with the molding compound and the transparent layer. The non-conductive layer has a first thickness less than a second thickness. The first thickness is on the molding compound, and the second thickness is on the transparent layer; and A conductive structure extends into the transparent layer towards the conductive pad.

8. The device according to claim 7, wherein the multiple first sidewalls of the die are coplanar with the multiple second sidewalls of the transparent layer.

9. The device according to claim 7, wherein the molding compound has an edge portion that extends away from the surface of the transparent layer facing away from the die and surrounds the surface of the transparent layer, such that the surface of the transparent layer is recessed within the molding compound.

10. The device according to claim 7, wherein: The molding compound includes: A third surface coplanar with the second surface of the die, A fourth surface opposite the first surface, and A third dimension extending along a second direction pointing from the third surface towards the fourth surface; and The transparent layer includes: A fifth surface opposite the first surface of the die, a fourth dimension, the fourth dimension extending along the second direction between the fifth surface of the transparent layer and the second surface of the die, and the fourth dimension is less than the third dimension.

11. A method includes: Forming a transparent material on a first surface of a wafer; Forming a conductive structure that extends into the transparent material spaced apart from the wafer towards the first surface of the wafer; Forming a temporary protective material on the second surface; And Forming dies by singulating the transparent material, the wafer, the temporary protective material, and the conductive structure; Wherein the die includes: A sensor located on a first surface of the die; A first contact pad adjacent to the sensor; and A second contact pad farther from the sensor than the first contact pad; The transparent material has: A surface facing the outside, opposite the first surface of the die; and; A first sidewall transverse to the surface facing the outside; Further including: Forming a molding compound on the first sidewalls of the die, on the second sidewalls of the transparent material, and on the third sidewalls of the conductive structure; the first sidewalls of the transparent material are in contact with the molding compound; Forming a non-conductive layer including multiple stacked non-conductive layers, the non-conductive layer having: A second surface coplanar with the molding compound; A third surface coplanar with the transparent material; A fourth surface opposite the second surface and the third surface; A first thickness between the second surface and the fourth surface; and A second thickness between the third surface and the fourth surface, the first thickness being less than the second thickness; and Forming a conductive structure that extends through the transparent material from the second contact pad to the non-conductive layer.

12. The method according to claim 11 further comprises: Remove the temporary protective material from the second surface of the transparent material.

13. The method according to claim 12, wherein removing the temporary protective material from the second surface of the temporary carrier further comprises: Form an edge portion of the molding compound around the second surface of the transparent material.

14. A method comprising: Form a transparent material on a first surface of a wafer; Form a conductive structure on the first surface that extends away from the first surface; Form a temporary protective layer on a surface of the transparent material facing away from the first surface; Form dies by singulating the wafer; and Form a molding compound on sidewalls of the die, sidewalls of the conductive structure, sidewalls of the transparent material, and sidewalls of the temporary protective layer, with the sidewalls of the transparent material in contact with the molding compound; Form a non-conductive layer including a plurality of stacked non-conductive layers having: A second surface coplanar with the molding compound; A third surface coplanar with the transparent material; A fourth surface opposite the second and third surfaces; A first thickness between the second surface and the fourth surface; And A second thickness between the third surface and the fourth surface, the first thickness being less than the second thickness; And Form a conductive structure that extends through the transparent material from a second contact pad to the non-conductive layer; Wherein the die includes: A sensor located on a first surface of the die; A first contact pad adjacent to the sensor; and The second contact pad, farther from the sensor than the first contact pad; Form a transparent layer on a first surface of the die, the transparent layer having: A surface facing outward, opposite the first surface of the die; and; A first sidewall transverse to the surface facing outward.

15. The method according to claim 14 further comprises: Form an edge portion of the molding compound around the surface of the transparent material and form a recess in the molding compound that exposes the surface of the transparent material by removing the temporary protective layer.

16. The method according to claim 14, wherein forming the molding compound further includes: Couple the die to a temporary carrier; Form a molding compound on the temporary carrier, on sidewalls of the die, on sidewalls of the conductive structure, on sidewalls of the transparent material, and on sidewalls of the temporary protective layer; And Form a recess in the molding compound and expose the surface of the transparent material by removing the temporary protective layer.

17. The method according to claim 16, further comprising: Form a plurality of non-conductive layers and redistribution layers on the molding compound; Form a first solder ball on the redistribution layer; Remove the transparent material, the conductive structure, the temporary protective layer, the die, the molding compound, the non-conductive layer, the redistribution layer, and the first solder ball from the temporary carrier; Flip the transparent material, the conductive structure, the temporary protective layer, the die, the molding compound, the non-conductive layer, the redistribution layer, and the first solder ball; And Couple the first solder ball and at least one of the non-conductive layers to a second temporary carrier.

18. The method according to claim 17, further comprising: The conductive layer is electrically coupled to the conductive structure on the first surface of the die by forming a conductive layer extending into a second surface of the die opposite the first surface.

19. The method according to claim 18, further comprising: forming a second solder ball on the conductive layer; forming a package by singulating the transparent material, the conductive structure, the die, the molding compound, the plurality of non-conductive layers, the redistribution layer, the first solder ball, and the conductive layer; and removing the package from the second temporary carrier.

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