Display backplane, method of manufacturing the same and display device

Abstract

The application provides a display backboard, a manufacturing method thereof and a display device. The display backboard comprises a light-emitting structure, a pixel definition layer and a separation structure. The light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer. At least part of the light-emitting structure is located in an opening of the pixel definition layer. The first electrode layer is arranged close to a substrate. The separation structure is located on a side of the pixel definition layer away from the opening. A part of the second electrode layer extends from the opening of the pixel definition layer along the pixel definition layer, through a gap between the pixel definition layer and the separation structure, and onto a side of the separation structure close to the pixel definition layer. The second electrode layer is electrically connected to the separation structure. The light-emitting layer is not connected at the gap between the pixel definition layer and the separation structure. In a direction perpendicular to the substrate, the height of the separation structure is greater than the height of the first electrode layer. The thickness of the first electrode layer is relatively thin, which can successfully solve the problem of bulging or peeling of the reflective first electrode layer metal film layer, thereby significantly improving the display effect and product yield.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more specifically, to a display backplate, its manufacturing method, and a display device. Background Technology

[0002] Transparent display products are widely used in automotive / subway displays and shop window displays in hotels / clothing stores, offering significant advantages such as clear image quality and realistic display effects. Large-size transparent displays often use very thin cathodes to enhance transparency, but this leads to a significant IR drop (infrared spectral drop). An effective solution is to effectively connect the cathode to a conductive structure on the backplane, greatly mitigating the IR drop problem. Currently, an effective connection method involves fabricating an "I"-shaped Rib structure on the backplane. The protruding tip at the top can smoothly cut the vapor-deposited EL light-emitting material, allowing the cathode to be deposited and successfully connect with the conductive structure. Because the conductive structure has strong conductivity, the IR drop problem is effectively solved. However, current display backplane structures still have many problems, such as interlayer bonding strength and EL light-emitting material cutting. Summary of the Invention

[0003] This invention aims to at least partially solve one of the technical problems in related technologies. Therefore, one object of this invention is to provide a display backplane that can effectively solve the problem of large voltage drop in the second electrode layer, or improve the stability of the first electrode layer structure in the light-emitting structure.

[0004] In one aspect of the present invention, a display backplane is provided. According to an embodiment of the present invention, the display backplane includes: a substrate, and a light-emitting structure, a pixel-defining layer, and an isolation structure located on one side of the substrate. The light-emitting structure includes a first electrode layer, a light-emitting layer, and a second electrode layer stacked thereon, with at least a portion of the light-emitting structure located in an opening of the pixel-defining layer. The first electrode layer is disposed close to the substrate. The isolation structure is located on the side of the pixel-defining layer away from the opening. A portion of the second electrode layer extends from the opening of the pixel-defining layer along the pixel-defining layer, through the gap between the pixel-defining layer and the isolation structure, to the side of the isolation structure close to the pixel-defining layer. The second electrode layer is electrically connected to the isolation structure. The light-emitting layer is not connected at the gap between the pixel-defining layer and the isolation structure. In a direction perpendicular to the substrate, the height of the isolation structure is greater than the height of the first electrode layer. Therefore, the thicker isolation structure can effectively cut the light-emitting layer, thereby making the cathode and the isolation structure make contact and make electrical connection, so as to realize the electrical connection between the cathode and the conductive structure, thereby reducing the IR drop of the second electrode layer; the thinner first electrode layer significantly reduces the stress of the metal layer of the first electrode layer reflected in the display area, thereby greatly reducing the stress difference between the first electrode layer and the underlying organic planarization layer, which can successfully solve the problem of bulging or peeling of the metal film layer of the first electrode layer reflected, thus significantly improving the display effect and product yield.

[0005] According to an embodiment of the present invention, the first electrode layer includes a first transparent layer, a reflective electrode layer and a second transparent layer stacked together, and the isolation structure includes a first layer, an intermediate layer and a second layer stacked together, wherein the thickness of the reflective electrode layer is less than the thickness of the intermediate layer.

[0006] According to an embodiment of the present invention, the thickness of the reflective electrode layer is 1 / 5 to 1 / 2 of the thickness of the intermediate layer.

[0007] According to an embodiment of the present invention, the thickness of the first transparent layer is the same as that of the first layer and is disposed in the same layer, and the thickness of the second transparent layer is the same as that of the second layer and is disposed in the same layer.

[0008] According to an embodiment of the present invention, the orthographic projection of the intermediate layer on the substrate is located inside the orthographic projection of the first layer on the substrate, and is located inside the orthographic projection of the second layer on the substrate.

[0009] According to an embodiment of the present invention, the width of the recess on the side of the first electrode layer near the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer.

[0010] According to an embodiment of the present invention, the display panel further includes a conductive structure disposed on the side of the light-emitting structure near the substrate, and the conductive structure is electrically connected to the isolation structure.

[0011] According to an embodiment of the present invention, the longitudinal section of the intermediate layer is trapezoidal.

[0012] In another aspect of the present invention, a method for manufacturing the aforementioned display backplane is provided. According to an embodiment of the present invention, the method for manufacturing the display backplane includes: forming a substrate; forming an isolation structure, a pixel definition layer, and a light-emitting structure on one side of the substrate, wherein the light-emitting structure includes a first electrode layer, a light-emitting layer, and a second electrode layer, and at least a portion of the light-emitting structure is located in an opening of the pixel definition layer; the first electrode layer is disposed close to the substrate; wherein, in a direction perpendicular to the substrate, the height of the isolation structure is greater than the height of the first electrode layer; wherein the method for forming the first electrode layer and the isolation structure includes: forming a first transparent layer and a first... A first full-surface conductive layer is formed on the surface of the first transparent layer and the first layer away from the substrate; the first full-surface conductive layer is etched to remove a first region of the first full-surface conductive layer, the orthographic projection of the first region on the substrate being substantially the same as the orthographic projection of the first electrode layer on the substrate; a second full-surface conductive layer is formed on the surface of the unremoved first full-surface conductive layer and the exposed surface of the first transparent layer; a transparent layer is formed on the surface of the second full-surface conductive layer away from the substrate; the transparent layer, the second full-surface conductive layer and the retained first full-surface conductive layer are etched to obtain a second transparent layer and a reflective electrode layer, and simultaneously to obtain the intermediate layer and the second layer of the isolation structure. Therefore, the isolation structure produced by the above method is relatively thick, which can effectively cut the light-emitting layer, thereby making the cathode and the isolation structure make contact and make electrical connection, so as to realize the electrical connection between the cathode and the conductive structure, thereby reducing the cathode IR drop; the thickness of the first electrode layer is relatively thin, which greatly reduces the stress of the metal layer of the first electrode layer in the display area, thereby greatly reducing the stress difference between the first electrode layer and the underlying organic planarization layer, which can successfully solve the problem of bulging or peeling of the metal film layer of the first electrode layer, and thus significantly improve the display effect and product yield.

[0013] In another aspect, the present invention provides a display device. According to an embodiment of the present invention, the display device includes the aforementioned display backplate. Therefore, the display device exhibits better display performance and higher product yield. Those skilled in the art will understand that this display device possesses all the features and advantages of the aforementioned display backplate, which will not be elaborated upon further here. Attached Figure Description

[0014] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0015] Figure 1 This is a schematic diagram of the structure of the display back panel in one embodiment of the present invention;

[0016] Figure 2 This is a scanning electron microscope image of a bulge occurring in the reflective electrode layer in the prior art;

[0017] Figure 3 This is a flowchart illustrating the fabrication of the display backplate in another embodiment of the present invention;

[0018] Figure 4 This is a flowchart illustrating the structure for fabricating a display backplate in another embodiment of the present invention. Detailed Implementation

[0019] The present invention will be explained below with reference to embodiments. Those skilled in the art will understand that the following embodiments are for illustrative purposes only and should not be considered as limiting the scope of the invention. Where specific techniques or conditions are not specified in the embodiments, they shall be performed in accordance with the techniques or conditions described in the literature in the art or in accordance with the product manual.

[0020] The present invention will now be described with reference to specific embodiments. It should be noted that these embodiments are merely descriptive and do not limit the present invention in any way.

[0021] In one aspect of the invention, a display back panel is provided. According to an embodiment of the invention, referring to... Figure 1The display backplane includes: a substrate, and a light-emitting structure, a pixel definition layer 40, and an isolation structure 30 located on one side of the substrate. The light-emitting structure includes a first electrode layer 21, a light-emitting layer 22, and a second electrode layer 23 stacked together, and at least a portion of the light-emitting structure is located in the opening of the pixel definition layer 40. The first electrode layer 21 is disposed close to the substrate. The isolation structure 30 is located on the side of the pixel definition layer 40 away from the opening. A portion of the second electrode layer 23 extends from the opening of the pixel definition layer along the pixel definition layer, through the gap between the pixel definition layer 40 and the isolation structure 30, to the side of the isolation structure 30 close to the pixel definition layer 40. The second electrode layer 23 is electrically connected to the isolation structure. The light-emitting layer 22 is not connected at the gap between the pixel definition layer 40 and the isolation structure 30. In the direction perpendicular to the substrate, the height of the isolation structure 30 is greater than the height of the first electrode layer 21. Therefore, the thicker isolation structure can effectively cut off the light-emitting layer, thereby enabling the cathode to make contact with the isolation structure and establish an electrical connection between the second electrode layer and the conductive structure, thus reducing the IR drop of the second electrode layer. The thinner first electrode layer significantly reduces the stress of the metal layer reflecting the first electrode layer in the display area, thereby greatly reducing the stress difference between the first reflective electrode layer and the underlying organic planarization layer. This can effectively solve the problem of bulging or peeling of the metal film layer of the first reflective electrode layer, thus significantly improving the display effect and product yield of the product.

[0022] The first electrode layer can be the anode of the light-emitting structure, and the second electrode layer can be the cathode of the light-emitting structure.

[0023] According to embodiments of the present invention, the specific structure of the substrate is not particularly required, and those skilled in the art can flexibly select it according to actual conditions. In some embodiments, reference is made to... Figure 1The substrate includes a substrate 12; a light-shielding layer 13 disposed on the surface of the substrate 12, the light-shielding layer 13 being formed of a conductive metal; a buffer layer 14 disposed on the surface of the substrate 12 and covering the light-shielding layer 13; an active layer 15 disposed on the surface of the buffer layer 14 away from the substrate 12; a gate insulating layer 16 disposed on the surface of the active layer 15 away from the substrate 12; a gate 17 disposed on the surface of the gate insulating layer 16 away from the substrate 12; and an interlayer dielectric layer 18 covering the exposed surfaces of the active layer and the exposed buffer layer. The surface of the interlayer dielectric layer 18 and the surface of the gate electrode; source 111 and drain 112, the source 111 and drain 112 are disposed on the surface of the interlayer dielectric layer 18 away from the substrate 12, wherein the source 111 and drain 112 are electrically connected to the active layer 15 through vias, and the drain 112 can also be electrically connected to the light-shielding layer 13, and the conductive structure 11 is disposed on the surface of the interlayer dielectric layer 18. In terms of fabrication process, the conductive structure can be prepared in the same step as the source 111 and drain 112; planarization layer 19, the planarization layer 19 is disposed on the surface of the interlayer dielectric layer 18 and covers the source 111 and drain 112. See reference. Figure 1 The light-emitting structure is disposed on the surface of the planarization layer 19, wherein the first electrode layer 21 is electrically connected to the drain 112 through a via penetrating the planarization layer 19, so as to realize the driving of the light-emitting structure by the thin-film transistor. (Refer to...) Figure 1 The isolation structure 30 is electrically connected to the conductive structure through a via penetrating the planarization layer 19.

[0024] The specific materials used in each of the above structures are not specifically required, and those skilled in the art can choose flexibly according to the actual situation. In some embodiments, the substrate may be a glass substrate, a polymer substrate, or a metal substrate; the specific materials of the buffer layer, gate insulating layer, and interlayer dielectric layer include, but are not limited to, at least one of silicon nitride, silicon oxide, silicon oxynitride, and organic insulating materials; the specific materials of the light-shielding layer, source electrode, drain electrode, and conductive structure include, but are not limited to, metals such as copper, aluminum, silver, molybdenum, and neodymium, or alloys of the above metals; the specific materials of the active layer include, but are not limited to, polycrystalline silicon, amorphous silicon, IGZO, or IZTO; the planarization layer may include an inorganic planarization layer and an organic planarization layer, wherein the inorganic planarization layer is disposed on the side near the substrate, and the organic planarization layer is disposed on the side near the first electrode layer. The specific materials of the inorganic planarization layer include, but are not limited to, at least one of silicon nitride, silicon oxide, and silicon oxynitride, and the material of the organic planarization layer is an organic insulating material. The pixel definition layer 40 defines multiple openings, and the effective light-emitting area of ​​the light-emitting structure is located within these openings. The pixel definition layer 40 covers the edge area of ​​the first electrode layer, and the area of ​​the openings exposing the first electrode layer is the effective light-emitting area of ​​the light-emitting structure.

[0025] According to an embodiment of the present invention, referring to Figure 1 The first electrode layer 21 includes a first transparent layer 211, a reflective electrode layer 212, and a second transparent layer 213 stacked together. The isolation structure 30 includes a first layer 31, an intermediate layer 32, and a second layer 33 stacked together. The thickness of the reflective electrode layer 212 is less than the thickness of the intermediate layer 32. Therefore, by reducing the thickness of the reflective electrode layer 212, the stress on the metal layer of the reflective electrode layer 212 in the display area can be effectively and significantly reduced, thereby greatly reducing the stress difference between the reflective electrode layer 212 and the underlying planar layer. This effectively solves the problem of bulging or peeling of the metal film layer of the reflective electrode layer 212, and thus significantly improves the display effect and product yield.

[0026] According to an embodiment of the present invention, the thickness of the first transparent layer 211 is the same as that of the first layer 31 and they are disposed in the same layer; the thickness of the second transparent layer 213 is the same as that of the second layer 33 and they are disposed in the same layer. Thus, the first electrode layer and the isolation structure are fabricated through the same step, i.e., the first transparent layer 211 and the first layer 31 are obtained through the same deposition step, so they have the same thickness; the reflective electrode layer 212 and the intermediate layer 32 are obtained through the same deposition step, so they have the same thickness; and the second transparent layer 213 and the second layer 33 are obtained through the same deposition step, so they have the same thickness. To achieve electrical connection between the cathode and the isolation structure, a currently effective overlapping method is to fabricate an "I"-shaped isolation structure on the backplate. This allows the protruding structure of the first layer to smoothly cut off the vapor-deposited light-emitting layer, and then the cathode can be deposited to electrically connect with the isolation structure, thus achieving smooth overlap between the second electrode layer and the conductive structure. Since the conductive structure has strong conductivity, the cathode IR drop problem can be effectively solved. To achieve successful cutting of the light-emitting layer, the isolation structure must be sufficiently thick. Therefore, the intermediate layer acting as the isolation structure must be sufficiently thick, which also results in a relatively thick reflective electrode layer in the first electrode layer. However, if the reflective electrode layer is too thick, the stress on the metal (i.e., the reflective electrode layer) will become exceptionally high, leading to a large stress difference between it and the underlying planarization layer (especially when the planarization layer includes both non-polar planarization and organic planarization layers, where the stress difference between the reflective electrode layer and the organic planarization layer is relatively large). This can easily cause the reflective electrode layer to bulge or detach (e.g., ...). Figure 2 As shown in the scanning electron microscope image, this severely affects the display effect and product yield. Therefore, in this invention, the inventors reduced the thickness of the reflective electrode layer while maintaining a relatively thick intermediate layer in the isolation structure. This effectively achieves the technical effect of cutting off the light-emitting layer, while simultaneously reducing the stress on the reflective electrode layer and the stress difference between it and the planarization layer. This improves the prevention of bulging or detachment of the reflective electrode layer, thereby enhancing the display effect and product yield of the display panel.

[0027] According to embodiments of the present invention, the thickness of the reflective electrode layer is 1 / 5 to 1 / 2 (e.g., 1 / 5, 1 / 4, 1 / 5, 1 / 2) of the thickness of the intermediate layer. Therefore, the thinner reflective electrode layer effectively reduces stress on the reflective electrode layer and decreases the stress difference between it and the planarization layer, thereby improving the prevention of bulging or detachment of the reflective electrode layer and thus enhancing the display effect and product yield of the display panel. In some embodiments of the present invention, the thickness of the reflective electrode layer is 30nm to 150nm, for example, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, and 150nm. Furthermore, there are no special requirements for the thickness of the intermediate layer in the isolation structure; those skilled in the art can flexibly choose the thickness of the intermediate layer from conventional technologies according to actual needs.

[0028] According to an embodiment of the present invention, referring to Figure 1 The orthographic projection of the intermediate layer 32 onto the substrate lies inside the orthographic projection of the first layer 31 onto the substrate, and also inside the orthographic projection of the second layer 33 onto the substrate. That is, the area of ​​the intermediate layer is smaller than the area of ​​the first layer and smaller than the area of ​​the second layer. Thus, the isolation structure has an "I"-shaped structure, which effectively cuts off the light-emitting layer. In some embodiments, refer to... Figure 1 The orthographic projection of the second layer on the substrate is located inside the orthographic projection of the first layer on the substrate, and the area of ​​the second layer is smaller than the area of ​​the first layer. This helps to ensure a stable connection between the second electrode layer 23 and the intermediate layer 32, so as to realize the electrical connection between the second electrode layer 23 and the isolation structure 30.

[0029] According to an embodiment of the present invention, referring to Figure 1 The width d1 of the indentation on the side of the first electrode layer 21 near the isolation structure 30 is smaller than the width d2 of the indentation between the second layer 33 and the intermediate layer 32. Therefore, the isolation structure effectively isolates the light-emitting layer, preventing the light-emitting layer 22 from connecting at the gap between the pixel definition layer 40 and the isolation structure 30. The specific values ​​of d1 and d2 are not particularly important; those skilled in the art can choose them flexibly according to the actual situation, as long as the function of the isolation pillar is effectively reflected.

[0030] According to an embodiment of the present invention, referring to Figure 1 The display panel also includes a conductive structure 11, which is disposed on the side of the light-emitting structure near the substrate. The conductive structure 11 is electrically connected to the isolation structure 30. Thus, the isolation structure 30 enables the conductive structure 11 to be electrically connected to the second electrode layer 23, thereby improving the voltage drop of the second electrode layer.

[0031] According to embodiments of the present invention, there are no particularly suitable requirements for the specific shape of the intermediate layer, and those skilled in the art can flexibly choose it according to the actual situation. In some embodiments, the intermediate layer can be a cube with a rectangular longitudinal section; in other embodiments, the longitudinal section of the intermediate layer is trapezoidal. Thus, the isolation structure is a square prism, wherein the top surface of the square prism with a smaller area is the surface away from the first layer (i.e., a regular trapezoidal structure, such as...). Figure 1 As shown), or the smaller top surface of the quadrangular prism is the surface closest to the first layer (i.e., the isolation structure is an inverted trapezoidal structure). Thus, the quadrangular prism-shaped middle layer can more effectively isolate the light-emitting layer.

[0032] According to an embodiment of the present invention, the materials of the first transparent layer 211 and the first layer 31 can be ITO, the materials of the reflective electrode layer 212 and the intermediate layer 32 can be metal materials with good reflective effect such as silver or aluminum, the materials of the second transparent layer 213 and the second layer 33 can be ITO, and the material of the second electrode layer 23 can be conductive materials such as magnesium, aluminum or IZO.

[0033] In another aspect, the present invention provides a method for manufacturing the aforementioned display back panel. According to an embodiment of the present invention, the method for manufacturing the display back panel includes:

[0034] S100: Forming a substrate.

[0035] In some embodiments, refer to Figure 1 The substrate includes a substrate 12; a light-shielding layer 13 disposed on the surface of the substrate 12, the light-shielding layer 13 being formed of a conductive metal; a buffer layer 14 disposed on the surface of the substrate 12 and covering the light-shielding layer 13; an active layer 15 disposed on the surface of the buffer layer 14 away from the substrate 12; a gate insulating layer 16 disposed on the surface of the active layer 15 away from the substrate 12; a gate 17 disposed on the surface of the gate insulating layer 16 away from the substrate 12; an interlayer dielectric layer 18 covering the exposed surfaces of the active layer, the exposed surfaces of the buffer layer, and the gate; a source 111 and a drain 112 disposed on the surface of the interlayer dielectric layer 18 away from the substrate 12, wherein the source 111 and the drain 112 are electrically connected to the active layer 15 through vias, and the drain 112 is also electrically connected to the light-shielding layer 13. The step of fabricating the substrate includes the step of forming a conductive structure, wherein the conductive structure 11 is disposed on the surface of the interlayer dielectric layer 18, and in terms of fabrication process, the conductive structure can be prepared in the same step as the source electrode 111 and the drain electrode 112; a planarization layer 19 is disposed on the surface of the interlayer dielectric layer 18 and covers the source electrode 111 and the drain electrode 112.

[0036] S200: An isolation structure 30, a pixel definition layer 40, and a light-emitting structure are formed on one side of the substrate. The light-emitting structure includes a first electrode layer 21, a light-emitting layer 22, and a second electrode layer 23. At least a portion of the light-emitting structure is located in the opening of the pixel definition layer 40. The isolation structure 30 is disposed near the first electrode layer 21. In the direction perpendicular to the substrate, the height of the isolation structure 30 is greater than the height of the first electrode layer 21.

[0037] Reference Figure 1 The light-emitting structure is disposed on the surface of the planarization layer 19, wherein the first electrode layer 21 is electrically connected to the drain 112 through a via penetrating the planarization layer 19, so as to realize the driving of the light-emitting structure by the thin-film transistor. (Refer to...) Figure 1 The isolation structure 30 is electrically connected to the conductive structure 11 through a via penetrating the planarization layer 19. In some embodiments, the isolation structure 30 and the first electrode layer 21 are formed in the same step, and the isolation structure 30 is electrically connected to both the first electrode layer 23 and the conductive structure 11. A schematic diagram can be found in the provided text. Figure 1 .

[0038] According to an embodiment of the present invention, the isolation structure fabricated by the above method is relatively thick, which can effectively cut the light-emitting layer, thereby making the cathode and the isolation structure make contact and electrically connected, so as to realize the electrical connection between the cathode and the conductive structure, thereby reducing the cathode IR drop; the thickness of the fabricated first electrode layer is relatively thin, which greatly reduces the stress of the metal layer of the first electrode layer reflecting the display area, thereby greatly reducing the stress difference between the first electrode layer reflecting the display and the underlying organic planarization layer, which can successfully solve the problem of bulging or peeling of the metal film layer of the first electrode layer reflecting the display, thereby significantly improving the display effect and product yield of the product.

[0039] According to an embodiment of the present invention, referring to Figure 3 and Figure 4 The method for forming the first electrode layer 21 and the isolation structure 30 includes:

[0040] S10: A first transparent layer 211 and a first layer 31 are formed at intervals on one side of a substrate, wherein the first layer 31 is electrically connected to the conductive structure 11, such as... Figure 3 (a) in the middle.

[0041] The first transparent layer 211 and the first layer 31, which are spaced apart, can be formed by: forming a full-layer transparent conductive layer on one side of the substrate by physical vapor deposition, chemical vapor deposition or magnetron sputtering, and then fabricating the first transparent layer 211 and the first layer 31, which are spaced apart, by coating photoresist, exposure, development and etching. That is to say, the first transparent layer 211 and the first layer 31, which are spaced apart, are fabricated by the same step and have the same thickness.

[0042] S20: A first full-surface conductive layer 321 is formed on the surfaces of the first transparent layer 211 and the first layer 31 away from the substrate, such as... Figure 3 (b) in the middle;

[0043] S30: The first conductive layer 321 is etched to remove a first region of the first conductive layer 321. The orthographic projection of the first region onto the substrate is substantially the same as the orthographic projection of the first electrode layer onto the substrate. Figure 3 (c) in the middle.

[0044] In the above steps, the first region is the region directly corresponding to the first electrode layer in the light-emitting structure that needs to be formed. The method for removing the first region of the first conductive layer 321 can include processes such as coating with photoresist, exposure, development, and etching.

[0045] S40: A second full-surface conductive layer 322 is formed on the surface of the first full-surface conductive layer 321 that has not been removed and on the exposed surface of the first transparent layer 211, such as... Figure 4 (d) in the middle.

[0046] There are no special requirements for the specific method of forming the second full-surface conductive layer 322. Those skilled in the art can choose flexibly according to actual needs. For example, the second full-surface conductive layer 322 can be formed by physical vapor deposition, chemical vapor deposition or magnetron sputtering.

[0047] S50: A transparent layer 330 is formed on the surface of the second conductive layer 322 away from the substrate, such as... Figure 4 (e) in the middle.

[0048] There are no special requirements for the specific method of forming the transparent layer 330. Those skilled in the art can choose flexibly according to actual needs. For example, the transparent layer 330 can be formed by physical vapor deposition, chemical vapor deposition or magnetron sputtering.

[0049] S60: Etch the transparent layer 330, the second full-surface conductive layer 322, and the retained first full-surface conductive layer 321 to obtain the second transparent layer 213 and the reflective electrode layer 212, and simultaneously obtain the intermediate layer 32 and the second layer 33 of the isolation structure 30, as shown. Figure 4 (f) in the middle.

[0050] According to an embodiment of the present invention, in step S60, the transparent layer 330 and the second conductive layer 322 are etched using the same etching solution. Since the etching rate of the etching solution differs for the transparent layer 330 and the second conductive layer 322—that is, the etching rate for the second conductive layer 322 is faster, and the etching rate for the transparent layer 330 is relatively slower—the resulting isolation structure has an "I"-shaped structure. Specifically, the orthographic projection of the intermediate layer on the substrate is located inside the orthographic projection of the first layer on the substrate, and also inside the orthographic projection of the second layer on the substrate. The area of ​​the intermediate layer is smaller than the area of ​​the first layer and also smaller than the area of ​​the second layer. Therefore, the isolation structure described above can effectively cut off the light-emitting layer.

[0051] According to embodiments of the present invention, the thickness of the reflective electrode layer is 1 / 5 to 1 / 2 of the thickness of the intermediate layer. Therefore, the thinner reflective electrode layer effectively reduces stress on the reflective electrode layer and decreases the stress difference between it and the planarization layer, thereby improving the prevention of bulging or detachment of the reflective electrode layer and thus enhancing the display effect and product yield of the display panel. In some embodiments of the present invention, the thickness of the reflective electrode layer is 30nm to 150nm, for example, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, and 150nm. Furthermore, there are no special requirements for the thickness of the intermediate layer in the isolation structure; those skilled in the art can flexibly choose the thickness of the intermediate layer from conventional technologies according to actual needs.

[0052] In another aspect, the present invention provides a display device. According to an embodiment of the present invention, the display device includes the aforementioned display backplate. Therefore, the display device exhibits better display performance and higher product yield. Those skilled in the art will understand that this display device possesses all the features and advantages of the aforementioned display backplate, which will not be elaborated upon further here.

[0053] According to embodiments of the present invention, there are no special requirements for the specific type of display device described above, and those skilled in the art can flexibly select one according to the actual situation. In some embodiments, the specific type of display device includes, but is not limited to, mobile phones, laptops, Kindles, iPads, televisions, game consoles, and all other display devices with display functions.

[0054] Those skilled in the art will understand that, in addition to the display panel described above, the display device also includes the structures or components necessary for conventional display devices. Taking a mobile phone as an example, in addition to the display panel described above, it also includes the glass cover, battery back cover, mid-frame, motherboard, touch module, audio module, camera module, and other necessary structures or components.

[0055] The terms "first" and "second" used in this document are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature marked "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0056] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0057] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for manufacturing a display back panel, characterized in that, include: Forming a substrate; An isolation structure, a pixel definition layer, and a light-emitting structure are formed on one side of the substrate. The light-emitting structure includes a first electrode layer, a light-emitting layer, and a second electrode layer, with at least a portion of the light-emitting structure located in an opening of the pixel definition layer. The first electrode layer is disposed close to the substrate. In the direction perpendicular to the substrate, the height of the isolation structure is greater than the height of the first electrode layer. The method for forming the first electrode layer and the isolation structure includes: A first transparent layer and a first layer are formed at intervals on one side of the substrate. A first full-surface conductive layer is formed on the first transparent layer and the surface of the first layer away from the substrate. The first conductive layer is etched to remove a first region of the first conductive layer. The orthographic projection of the first region on the substrate is substantially the same as the orthographic projection of the first electrode layer on the substrate. A second full-surface conductive layer is formed on the surface of the first full-surface conductive layer that has not been removed and on the surface of the first transparent layer that is exposed. A transparent layer is formed on the surface of the second full-surface conductive layer away from the substrate. The transparent layer, the second full-surface conductive layer, and the retained first full-surface conductive layer are etched to obtain the second transparent layer and the reflective electrode layer, and at the same time, the intermediate layer and the second layer of the isolation structure are obtained. The width of the recess on the side of the first electrode layer near the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer.

2. A display back panel, characterized in that, The display back panel manufactured according to the method of manufacturing a display back panel according to claim 1 comprises: A substrate, and a light-emitting structure, a pixel definition layer and an isolation structure located on one side of the substrate, wherein the light-emitting structure includes a first electrode layer, a light-emitting layer and a second electrode layer stacked together, and at least a portion of the light-emitting structure is located in the opening of the pixel definition layer, and the first electrode layer is disposed close to the substrate. The isolation structure is located on the side of the pixel definition layer away from the opening; A portion of the second electrode layer extends from the opening of the pixel definition layer along the pixel definition layer, through the gap between the pixel definition layer and the isolation structure, to the side of the isolation structure near the pixel definition layer, and the second electrode layer is electrically connected to the isolation structure. The light-emitting layer is not connected at the gap between the pixel definition layer and the isolation structure; In a direction perpendicular to the substrate, the height of the isolation structure is greater than the height of the first electrode layer; The width of the recess on the side of the first electrode layer near the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer; The width of the recess on the side of the first electrode layer near the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer.

3. The display back panel according to claim 2, characterized in that, The first electrode layer includes a first transparent layer, a reflective electrode layer and a second transparent layer stacked together, and the isolation structure includes a first layer, an intermediate layer and a second layer stacked together, wherein the thickness of the reflective electrode layer is less than the thickness of the intermediate layer.

4. The display back panel according to claim 3, characterized in that, The thickness of the reflective electrode layer is 1 / 5 to 1 / 2 of the thickness of the intermediate layer.

5. The display back panel according to claim 3, characterized in that, The thickness of the first transparent layer is the same as that of the first layer and they are disposed in the same layer. The thickness of the second transparent layer is the same as that of the second layer and they are disposed in the same layer.

6. The display back panel according to any one of claims 3 to 5, characterized in that, The orthographic projection of the intermediate layer on the substrate is located inside the orthographic projection of the first layer on the substrate, and inside the orthographic projection of the second layer on the substrate.

7. The display back panel according to any one of claims 3 to 5, characterized in that, It also includes a conductive structure disposed on the side of the light-emitting structure near the substrate, and the conductive structure is electrically connected to the isolation structure.

8. The display back panel according to any one of claims 3 to 5, characterized in that, In the direction perpendicular to the substrate, the longitudinal section of the intermediate layer is trapezoidal.

9. A display device, characterized in that, The display back panel includes any one of claims 2 to 8.

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