Processing modules and processing methods

Abstract

The present invention relates to a processing module and a processing method. Detecting the positional deviation of a wafer during transportation within a processing container. The processing module comprises a processing container, a rotating arm, and a sensor. The processing container comprises a plurality of processing spaces therein, the centers of the plurality of processing spaces being located on the same circumference and each being provided with a loading table. The rotating arm comprises a plurality of holding portions capable of holding wafers respectively placed on the loading tables of the plurality of processing spaces, and the rotating arm is configured to rotate with the center of the circumference as the axis of rotation. The sensor is located between adjacent processing spaces and is capable of detecting the position of the wafer held by the rotating arm during the rotating action of the rotating arm.

Description

Technical Field

[0001] The present disclosure relates to a processing module and a processing method. Background Art

[0002] As a processing module for processing substrates (hereinafter also referred to as wafers) in a substrate processing system, there is known a processing module of a type that processes a plurality of wafers simultaneously in one processing container (Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-220509 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a processing module and a processing method capable of detecting positional deviation of a wafer during transportation within a processing container.

[0008] Solutions for solving problems

[0009] A processing module of a technical solution disclosed herein comprises: a processing container having a plurality of processing spaces therein, the centers of the plurality of processing spaces being located on the same circumference and being respectively provided with a loading table; a rotating arm having a plurality of holding portions capable of holding wafers respectively placed on the loading tables of the plurality of processing spaces, the rotating arm being configured to rotate with the center of the circumference as the axis of rotation; and a sensor located between adjacent processing spaces, capable of detecting the position of the wafer held by the rotating arm when the rotating arm rotates.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to detect positional deviation of a wafer during transport within a processing container. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic plan view showing an example of the structure of a substrate processing system according to one embodiment of the present disclosure.

[0013] Figure 2 It is an exploded perspective view showing an example of the structure of the substrate processing apparatus according to the present embodiment.

[0014] Figure 3 This is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the standby position.

[0015] Figure 4FIG. 1 is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the wafer holding position.

[0016] Figure 5 FIG. 1 is a diagram showing an example of a movement path of a wafer in the substrate processing apparatus according to the present embodiment.

[0017] Figure 6 This is a diagram showing an example of the arrangement position of the sensor.

[0018] Figure 7 FIG. 1 is a diagram showing an example of an exhaust path of the substrate processing apparatus according to the present embodiment.

[0019] Figure 8 It is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus according to the present embodiment.

[0020] Figure 9 This is a flowchart showing the steps of a process performed by the substrate processing apparatus according to the embodiment. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the disclosed processing module and processing method will be described in detail based on the accompanying drawings.

[0022] In a processing module that processes multiple wafers simultaneously within a single processing container, multiple processing spaces are provided within the container. Sometimes, two or more of these processing spaces perform different wafer processing operations. In such cases, wafers are transported between the two or more processing spaces within the processing module. This transport of wafers between the two or more processing spaces is typically performed using a wafer transport mechanism that transfers wafers into and out of the processing container. This can complicate the transport process of the wafer transport mechanism.

[0023] In this regard, a technology is considered in which a rotating arm is provided in a processing container and the rotating arm is used to transport substrates between two or more processing spaces. However, when a rotating arm is used to transport wafers in a processing container, the position of the wafer may shift from a predetermined reference position (for example, the center position of the processing space serving as the transport destination) due to positional offset during wafer transfer, vibration of the rotating arm, etc. The positional offset of the wafer becomes the main reason for the decrease in the uniformity of the processing performed on the wafer. Therefore, a technology is desired to detect the positional offset of the wafer during transport in a processing container.

[0024] (Implementation Method)

[0025] [Structure of substrate processing system]

[0026] Figure 1This is a schematic plan view showing an example of the structure of a substrate processing system according to one embodiment of the present disclosure. Figure 1 The substrate processing system 1 shown in FIG. 1 includes an inlet and outlet 11, an inlet and outlet module 12, vacuum transport modules 13a, 13b, and substrate processing devices 2, 2a, 2b. Figure 1 In the description, the X direction is defined as the left-right direction, the Y direction is defined as the front-back direction, the Z direction is defined as the top-bottom direction (height direction), and the inlet / outlet 11 is defined as the front-to-back side. The inlet / outlet 11 is connected to the front-to-back side of the inlet / outlet module 12, facing each other in the front-to-back direction. The vacuum transfer module 13a is connected to the back side of the inlet / outlet module 12, facing each other in the front-to-back direction.

[0027] A carrier, a transport container that holds substrates to be processed, is placed at the inlet / outlet 11. The substrate is a circular wafer W, for example, with a diameter of 300 mm. The inlet / outlet module 12 is used to transfer wafers W between the carrier and the vacuum transport module 13a. The inlet / outlet module 12 includes an atmospheric transport chamber 121, which uses a transport mechanism 120 to transfer wafers W to and from the carrier under atmospheric pressure, and a load lock chamber 122, which switches the atmosphere in which the wafers W are placed between atmospheric pressure and vacuum.

[0028] The vacuum transfer modules 13a and 13b each have a vacuum transfer chamber 14a and 14b formed into a vacuum atmosphere. Substrate transfer mechanisms 15a and 15b are respectively arranged inside the vacuum transfer chambers 14a and 14b. A channel 16 for transferring wafers W between the vacuum transfer modules 13a and 13b is arranged between the vacuum transfer modules 13a and 13b. The vacuum transfer chambers 14a and 14b are each formed, for example, to be rectangular when viewed from above. The substrate processing devices 2 and 2b are respectively connected to the sides of the four side walls of the vacuum transfer chamber 14a that are opposite to each other in the left-right direction. The substrate processing devices 2a and 2b are respectively connected to the sides of the four side walls of the vacuum transfer chamber 14b that are opposite to each other in the left-right direction.

[0029] Furthermore, the load lock chamber 122 provided within the loading and unloading module 12 is connected to the front side of the four side walls of the vacuum transfer chamber 14a. Gate valves G are disposed between the atmospheric transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer module 13a, and between the vacuum transfer modules 13a and 13b and the substrate processing apparatuses 2, 2a, and 2b. The gate valves G open and close the loading and unloading ports for wafers W provided in the interconnected modules.

[0030] The substrate conveying mechanism 15a conveys wafers W between the loading and unloading module 12, the substrate processing devices 2, 2b, and the channel 16 in a vacuum atmosphere. In addition, the substrate conveying mechanism 15b conveys wafers W between the channel 16 and the substrate processing devices 2a, 2b in a vacuum atmosphere. The substrate conveying mechanisms 15a, 15b are formed by a multi-jointed arm and have a substrate holding portion for holding the wafers W. The substrate processing devices 2, 2a, 2b perform substrate processing using a processing gas on multiple (for example, two or four) wafers W at a time in a vacuum atmosphere. Therefore, the substrate holding portion of the substrate conveying mechanism 15a, 15b is configured to, for example, simultaneously hold two wafers W so as to deliver the two wafers W to the substrate processing devices 2, 2a, 2b at a time. In addition, the substrate processing devices 2, 2a can use a rotating arm provided inside to convey the wafers W received on the loading platform on the side of the vacuum conveying module 13a, 13b to the loading platform on the inner side. Furthermore, the substrate processing apparatuses 2 and 2 a can detect the position of the wafer W using a sensor provided therein when the wafer W is transported by the rotary arm.

[0031] In addition, the Y-direction pitch (row spacing) of the mounting tables of the substrate processing devices 2, 2a, and 2b is the same as the pitch Py, so the substrate processing devices 2, 2a, and 2b can be connected to any portion of the sides of the vacuum transfer modules 13a and 13b that are opposite to each other in the left-right direction. Figure 1 In the example, the vacuum transport module 13a is connected to the substrate processing device 2 and the substrate processing device 2b, and the vacuum transport module 13b is connected to the substrate processing device 2a and the substrate processing device 2b. In addition, the substrate processing device 2 and the substrate processing device 2a are substrate processing devices in which the diameters of the reactors (processing containers) corresponding to the process applications, including the processing space corresponding to one loading platform, are different, and the pitches Px1 and Px2, which are the X-direction pitches (column spacings) of the loading platforms, are different. In addition, the pitch Px2 of the substrate processing device 2a is the same value as the pitch Py. In other words, the pitch Py corresponds to the size of the largest reactor. That is, the size of the reactor of the substrate processing device 2 is smaller than that of the substrate processing device 2a, so the pitch Px1 can be made smaller than the pitch Px2.

[0032] The substrate processing apparatus 2b is a type of substrate processing apparatus having two stages. No wafers are transported within the substrate processing apparatus 2b. The substrate processing apparatus 2b is a type of substrate processing apparatus that simultaneously carries in two wafers, processes them, and simultaneously carries them out.

[0033] The substrate processing system 1 has a control unit 8. The control unit 8 is, for example, a computer having a processor, a storage unit, an input device, a display device, and the like. The control unit 8 controls the various parts of the substrate processing system 1. The control unit 8 can use the input device to input commands, etc., so that the operator can manage the substrate processing system 1. In addition, in the control unit 8, the operating status of the substrate processing system 1 can be visually displayed using a display device. Moreover, the storage unit of the control unit 8 stores control programs and process data for controlling various processes performed by the substrate processing system 1 using the processor. The processor of the control unit 8 executes the control program and controls the various parts of the substrate processing system 1 according to the process data, so that the substrate processing system 1 performs the desired substrate processing.

[0034] [Structure of substrate processing apparatus]

[0035] Next, use Figures 2 to 8 An example in which the substrate processing apparatuses 2 and 2 a are applied to a film forming apparatus that performs a plasma CVD (Chemical Vapor Deposition) process on a wafer W will be described. Figure 2 This is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to this embodiment. The internal structure of substrate processing apparatus 2a is essentially the same as that of substrate processing apparatus 2, except for the difference between pitch Px2 and pitch Px1, and the placement of sensors capable of detecting the position of wafer W. Therefore, the following description of substrate processing apparatus 2a will be omitted, and substrate processing apparatus 2 will be used as a representative example. Substrate processing apparatuses 2 and 2a are examples of processing modules.

[0036] like Figure 2 As shown, the substrate processing apparatus 2 includes a processing container (vacuum container) 20 that is rectangular when viewed from above. The processing container 20 is configured to maintain a vacuum atmosphere inside. The processing container 20 is configured to close the open portion of the upper surface using the gas supply unit 4 and the manifold 36 described later. Figure 2 In the figure, internal partitions and the like are omitted to facilitate identification of the relationship between the processing spaces S1 to S4 and the rotary arm 3. The processing container 20 has two inlet and outlet ports 21 formed on the side surface connected to the vacuum transfer chamber 14a or the vacuum transfer chamber 14b, aligned in the Y direction. The inlet and outlet ports 21 are opened and closed by a gate valve G.

[0037] A plurality of processing spaces S1 to S4 are provided inside the processing container 20. A loading table 22 is provided in each of the processing spaces S1 to S4. The loading table 22 can move in the up and down directions, and moves upward when the wafer W is processed, and moves downward when the wafer W is transported. A transport space T is provided in the lower part of the processing spaces S1 to S4, and the transport space T connects the processing spaces S1 to S4, and the wafer W is transported by the rotating arm 3. In addition, the transport space T in the lower part of the processing spaces S1 and S2 is connected to each of the loading and unloading ports 21, and the wafer W is transported in and out of the vacuum transport chambers 14a and 14b by the substrate transport mechanisms 15a and 15b.

[0038] The centers of the plurality of processing spaces S1 to S4 are located on the same circumference C. The center of the circumference C coincides with the center of the substrate processing apparatus 2, that is, the center of the processing container 20. That is, when viewed from the top side, the plurality of processing spaces S1 to S4 are arranged on the circumference C whose center coincides with the center of the processing container 20.

[0039] When viewed from the top, the stages 22 in processing spaces S1 to S4 are arranged in two rows and two columns. This layout creates different spacing between rows and columns. Specifically, when comparing the pitch Py (the Y-direction spacing between rows) and the pitch Px1 (the X-direction spacing between columns) between the stages 22, Py > Px1.

[0040] Figure 3 This is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the standby position. Figure 4 FIG. 1 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the wafer holding position. Figure 3 and Figure 4 As shown, the rotating arm 3 has four end effectors 32 that can hold the wafers W placed on the mounting table 22, and a base member 33 whose rotation axis is located at the center of the circumference C. The rotating arm 3 is configured to be rotatable about the center of the circumference C. The four end effectors 32 are connected to the base member 33 in an X-shaped manner. The X-shape of the rotating arm 3 is as follows: Figure 4 At the holding position of the wafer W shown, the dimension of the X shape in the Y direction corresponding to the row interval is different from the dimension in the X direction corresponding to the column interval.

[0041] exist Figure 3 In the illustrated standby position, the rotary arm 3 is located between the processing spaces S1 to S4 so as not to hinder the vertical movement of the mounting tables 22 . Figure 3The state in which wafers W are placed on each mounting table 22 is described. The movement of the rotary arm 3 will be described from this state, for example, when wafers W are transported in such a manner that the first and second rows of wafers W are swapped, that is, when wafers W in processing spaces S1 and S2 are transported to processing spaces S3 and S4, or when wafers W in processing spaces S3 and S4 are transported to processing spaces S1 and S2.

[0042] First, each stage 22 is moved to the intersection position of the lower conveying space T, and the lifting pins 26 described later provided on each stage 22 are raised to lift the wafer W. Next, the rotating arm 3 is rotated clockwise by about 30 degrees, as shown in FIG. Figure 4 As shown, each end effector 32 is inserted between the mounting table 22 and the wafer W. Then, the lifting pins 26 are lowered to place the wafer W on each end effector 32. Then, the rotating arm 3 is rotated 180° clockwise to transport the wafer W to the holding position on each mounting table 22. When each mounting table 22 raises the lifting pins 26 to receive the wafer W, the rotating arm 3 is rotated approximately 30° counterclockwise and moves to the standby position. In this way, the rotating arm 3 can be used to transport the wafers W in the first column and the second column by exchanging them. Thus, for example, when different processes (for example, film forming process and annealing process) are performed in the processing spaces S1, S2 and the processing spaces S3, S4, the rotating arm 3 can be used to transport the wafer W between the processing spaces S1, S2 and the processing spaces S3, S4. Therefore, for example, when different processes are repeatedly performed in the processing spaces S1 and S2 and the processing spaces S3 and S4 (for example, when film formation and annealing are repeatedly performed), the time associated with transporting the wafer W can be shortened.

[0043] Figure 5 FIG. 1 is a diagram showing an example of a movement path of a wafer in a substrate processing apparatus according to this embodiment. Figure 5 2, the movement path for transporting wafers W from the vacuum transfer chamber 14a into the interior of the substrate processing apparatus 2 is described. First, as shown by path F1, the substrate transfer mechanism 15a of the vacuum transfer chamber 14a simultaneously transfers two wafers W to each mounting table 22 at the intersection of the transfer space T below the processing spaces S1 and S2 corresponding to the mounting tables 22 in the same row. Each mounting table 22 in the processing spaces S1 and S2 then raises its lift pins 26 to receive the wafers W.

[0044] Next, the rotary arm 3 rotates approximately 30° clockwise from its standby position, inserting the end effector 32 between the wafer W and the mounting table 22 at the intersection of the lower processing spaces S1 and S2. The lift pins 26 are lowered, placing the wafer W on each end effector 32. To place the wafer W, as shown by path F2, the rotary arm 3 rotates 180° clockwise and transports the wafer W to the mounting table 22 at the intersection of the transfer space T below the processing spaces S3 and S4 (where the rotary arm 3 holds the wafer W). When the lift pins 26 are raised on the mounting table 22 at the intersection of the lower processing spaces S3 and S4 to receive the wafer W, the rotary arm 3 rotates approximately 30° counterclockwise and moves to its standby position. In this state, no wafer W is placed on the mounting tables 22 in the processing spaces S1 and S2, but wafer W is placed on the mounting tables 22 in the processing spaces S3 and S4. Next, as shown in path F1, the substrate conveying mechanism 15a of the vacuum conveying chamber 14a is used to simultaneously deliver two wafers W to each loading table 22 at the intersection position in the lower part of the processing spaces S1 and S2, and the wafers W are placed on the loading tables 22 in the processing spaces S1 and S2, so that wafers W are placed on the loading tables 22 in all processing spaces S1 to S4.

[0045] Similarly, when transferring wafers, the substrate transfer mechanism 15a first transfers wafers W placed on the loading table 22 at the lower intersection of processing spaces S1 and S2 to the vacuum transfer chamber 14a. Next, the rotating arm 3 transfers wafers W placed on the loading table 22 at the lower intersection of processing spaces S3 and S4 to the loading table 22 at the lower intersection of processing spaces S1 and S2. Next, the substrate transfer mechanism 15a transfers wafers W placed on the loading table 22 at the lower intersection of processing spaces S1 and S2 to the vacuum transfer chamber 14a. In this manner, by using the rotating arm 3 and the substrate transfer mechanism 15a capable of simultaneously transferring two wafers W, wafers W can be transferred to and from processing spaces S1 to S4.

[0046] However, when wafers W are transported within processing container 20 using rotary arm 3, the position of wafer W may shift from a predetermined reference position (e.g., the center of processing spaces S1 to S4, which are the destinations for transport) due to positional deviation during wafer transfer, vibration of rotary arm 3, and the like. This positional deviation of wafer W can cause a decrease in processing uniformity within processing spaces S1 to S4.

[0047] Therefore, in the substrate processing apparatus 2, when the wafer W is transported by the rotating arm 3, the position of the wafer W is detected. Specifically, the substrate processing apparatus 2 has a sensor located between adjacent processing spaces S1 to S4, which can detect the position of the wafer W held by the rotating arm 3 when the rotating arm 3 rotates. Figure 5 In the example of FIG. 1 , the substrate processing apparatus 2 includes sensors 31 a and 31 b between the adjacent processing spaces S1 and S2 and between the adjacent processing spaces S3 and S4 , respectively.

[0048] Each of the sensors 31a and 31b is a set of, for example, two unit sensors, arranged on a straight line in the X direction passing through the center of the substrate processing apparatus 2 (processing container 20), that is, the center of the circle C. The two unit sensors of each of the sensors 31a and 31b are arranged on a straight line in the X direction passing through the center of the circle C, and are positioned so as to sandwich the arc of the circle C. This is to align the direction of thermal expansion of the processing container 20 with the arrangement direction of the two unit sensors of each of the sensors 31a and 31b, thereby reducing detection errors caused by changes in the positional relationship between the two unit sensors due to thermal expansion. For example, optical sensors or millimeter wave sensors can be used as the two unit sensors of each of the sensors 31a and 31b.

[0049] Furthermore, the sensors 31a and 31b can be arranged on a straight line passing through the center of the substrate processing apparatus 2, and are not limited to being arranged in the X direction. Furthermore, in a substrate processing apparatus 2a in which the pitch Py (row spacing) of the mounting tables 22 in the Y direction and the pitch Px2 (column spacing) in the X direction are the same, sensors may be arranged on both a straight line in the X direction and a straight line in the Y direction passing through the center of the substrate processing apparatus 2a. Figure 6 This is a diagram showing an example of the arrangement position of the sensor. Figure 6 The illustrated substrate processing apparatus 2a includes sensors 31a to 31d between adjacent processing spaces S1 and S2, between adjacent processing spaces S3 and S4, between adjacent processing spaces S2 and S3, and between adjacent processing spaces S4 and S1. Sensors 31a and 31b are arranged on a straight line in the X direction passing through the center of substrate processing apparatus 2 (processing container 20), that is, the center of circle C. Sensors 31c and 31d are arranged on a straight line in the Y direction passing through the center of circle C. This is to align the direction of thermal expansion of the processing container 20 with the arrangement direction of the two unit sensors 31a to 31d, thereby reducing detection errors caused by changes in the positional relationship between the two unit sensors during thermal expansion.

[0050] return Figure 5Description. The substrate processing apparatus 2 detects the position of the wafer W using sensors 31a and 31b, thereby being able to detect the amount of positional offset of the wafer W in the processing spaces S1 to S4 to which it is transported. For example, the substrate processing apparatus 2 calculates the amount of positional offset of the wafer W based on the front and rear edge positions of the wafer W detected by the sensors 31a and 31b and the output result (rotation angle of the wafer W) of an encoder (not shown) provided on the rotary arm 3. The amount of positional offset of the wafer W can be calculated, for example, using a calculation model that can calculate the amount of offset based on the front and rear edge positions of the wafer W and the rotation angle of the wafer W.

[0051] exist Figure 5 In the example, location P24 indicates the state where the rear edge of wafer W passes sensor 31b when being transported from processing space S2 to processing space S4, and location P42 indicates the state where the rear edge of wafer W passes sensor 31a when being transported from processing space S4 to processing space S2. For example, substrate processing apparatus 2 calculates the amount of positional offset of wafer W in processing space S4, the destination, based on the position of the rear edge of wafer W detected by sensor 31b when the rear edge of wafer W passes sensor 31b and the output of an encoder. Alternatively, for example, substrate processing apparatus 2 may calculate the amount of positional offset of wafer W in processing space S4, the destination, based on the position of the front edge of wafer W detected by sensor 31b when the front edge of wafer W passes sensor 31b and the output of an encoder. In addition, for example, the substrate processing device 2 can also calculate the average value of the position offset of the wafer W detected when the rear edge of the wafer W passes the sensor 31b and the position offset of the wafer W detected when the front edge of the wafer W passes the sensor 31b.

[0052] Furthermore, the substrate processing apparatus 2 corrects the positional deviation of the wafer W by moving the mounting table 22 in the processing spaces S1 to S4, the destination of the wafer W, at least within the XY plane, based on the amount of positional deviation of the wafer W detected during wafer W transport by the rotary arm 3. Specifically, the substrate processing apparatus 2 includes an adjustment mechanism 700 capable of adjusting the position of the mounting table 22. The adjustment mechanism 700 is controlled based on the detected amount of deviation to move the mounting table 22, thereby correcting the positional deviation of the wafer W. In other words, the substrate processing apparatus 2 adjusts the positional deviation so that the wafer W is located at the center of the processing spaces S1 to S4 when the mounting table 22 is raised.

[0053] The adjustment mechanism 700 and the sensors 31a and 31b are fixed to the bottom 27 of the processing container 20 (see Figure 8This is to secure the adjustment mechanism 700 and the sensors 31a, 31b to the processing container 20, which is a common component, and thereby suppress changes in the positional relationship between the adjustment mechanism 700 and the sensors 31a, 31b caused by thermal expansion of the processing container 20.

[0054] Figure 7 FIG. 1 is a diagram showing an example of an exhaust path of a substrate processing apparatus according to this embodiment. Figure 7 , the processing container 20 is viewed from the top surface with the gas supply unit 4 described later removed. Figure 7 As shown, a manifold 36 is disposed at the center of the substrate processing apparatus 2. The manifold 36 has multiple exhaust passages 361 connected to the processing spaces S1 to S4. Each exhaust passage 361 is connected to a hole 351 of a thrust nut 35 (described later) at the center lower portion of the manifold 36. Each exhaust passage 361 is connected to an annular flow path 363 within a guide member 362 provided above the processing spaces S1 to S4. In other words, the gas within the processing spaces S1 to S4 is exhausted to the confluent exhaust port 205 (described later) via the flow path 363, the exhaust passage 361, and the hole 351.

[0055] Figure 8 It is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus according to the present embodiment. Figure 8 The cross section is equivalent to Figure 7 The cross section of the substrate processing apparatus 2 at line AA is shown. The four processing spaces S1 to S4 are constructed similarly to each other and are formed between the mounting table 22 on which the wafer W is mounted and the gas supply unit 4 arranged opposite to the mounting table 22. In other words, within the processing container 20, the mounting table 22 and the gas supply unit 4 are provided for each of the four processing spaces S1 to S4. Figure 8 , processing spaces S1 and S3 are shown. The following description will be made taking processing space S1 as an example.

[0056] The mounting table 22 also serves as a lower electrode, and is formed into a flat cylindrical shape made of metal or aluminum nitride (AlN) with a metal mesh electrode embedded therein. The mounting table 22 is supported from below by a support member 23. The support member 23 is formed into a cylindrical shape, extends vertically downward, and passes through the bottom 27 of the processing container 20. The lower end of the support member 23 is located outside the processing container 20 and is connected to the rotation drive mechanism 600. The support member 23 is rotated by the rotation drive mechanism 600. The mounting table 22 is configured to be rotatable according to the rotation of the support member 23. In addition, an adjustment mechanism 700 for adjusting the position and inclination of the mounting table 22 is provided at the lower end of the support member 23. The adjustment mechanism 700 is connected to the sensors 31a and 31b (refer to Figure 5 ) are fixed together to the outer surface of the bottom 27 of the processing container 20.

[0057] The mounting table 22 is configured to be able to be raised and lowered between the processing position and the delivery position via the support member 23 using the adjustment mechanism 700. Figure 8 In the figure, the stage 22 at the handover position is depicted by a solid line, and the stage 22 at the processing position is depicted by a dotted line. In addition, at the handover position, the state in which the end effector 32 of the rotating arm 3 is inserted between the stage 22 and the wafer W and the wafer W is received from the lifting pin 26 is shown. In addition, the processing position refers to the position when substrate processing (for example, film forming processing) is performed, and the handover position refers to the position where the wafer W is handed over to the substrate conveying mechanism 15a or the end effector 32. The moving path of the wafer W held by the rotating arm 3 (for example, Figure 5 The path F2) is located closer to the bottom 27 of the processing container 20 than the processing position. Thus, when the wafer W is transported by the rotating arm 3, the wafer W can be brought closer to the sensors 31a and 31b located on the outer surface of the bottom 27 of the processing container 20, thereby improving the detection accuracy of the sensors 31a and 31b.

[0058] A heater 24 is embedded in the mounting table 22. The heater 24 heats each wafer W mounted on the mounting table 22 to, for example, approximately 60° C. to 600° C. The mounting table 22 is connected to a ground potential.

[0059] The mounting platform 22 is also provided with a plurality (e.g., three) of pin through-holes 26a, each of which has a lift pin 26 disposed therein. The pin through-holes 26a extend from the mounting surface (top surface) of the mounting platform 22 to the back surface (bottom surface) opposite the mounting surface. The lift pin 26 is slidably inserted into the pin through-holes 26a. The upper end of the lift pin 26 is suspended from the mounting surface of the pin through-holes 26a. Specifically, the upper end of the lift pin 26 has a larger diameter than the pin through-holes 26a, and a recessed portion having a larger diameter and thickness than the upper end of the lift pin 26 is formed at the upper end of the pin through-holes 26a and capable of accommodating the upper end of the lift pin 26. Consequently, the upper end of the lift pin 26 is secured to the mounting platform 22 and suspended from the mounting surface of the pin through-holes 26a. In addition, the lower ends of the lift pins 26 protrude from the rear surface of the mounting table 22 toward the bottom 27 of the processing container 20 .

[0060] When the stage 22 is raised to the processing position, the upper ends of the lift pins 26 are received in the recessed portions of the pin through-holes 26a on the loading side. When the stage 22 is lowered to the delivery position from this position, the lower ends of the lift pins 26 abut against the bottom 27 of the processing container 20, and the lift pins 26 move within the pin through-holes 26a. Figure 8As shown, the upper ends of the lift pins 26 protrude from the mounting surface of the mounting table 22. In this case, the lower ends of the lift pins 26 may not abut against the bottom 27 of the processing container 20 but may abut against a member such as a lift pin abutting member located on the bottom side.

[0061] The gas supply unit 4 is located at the top of the processing container 20, above the mounting table 22, via a guide member 362 formed of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42; a shower plate 43, which forms an opposing surface facing the mounting surface of the mounting table 22; and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and the shower plate 43 has gas ejection holes 45 arranged vertically and horizontally, extending through the thickness of the shower plate 43. Gas is ejected toward the mounting table 22 in a shower-like manner.

[0062] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, sources for reactant gas (film-forming gas), purge gas, and cleaning gas, piping, valves V, and a flow rate adjustment unit M. For example, the gas supply system 50 includes a cleaning gas supply source 53, a reactant gas supply source 54, a purge gas supply source 55, valves V1 to V3 provided in the piping of each supply source, and flow rate adjustment units M1 to M3.

[0063] The cleaning gas supply source 53 is connected to the cleaning gas supply passage 532 via the flow adjustment unit M1, valve V1, and remote plasma unit (RPU: Remote Plasma Unit) 531. The cleaning gas supply passage 532 branches into four systems on the downstream side of the RPU 531, and each is connected to the gas supply pipe 51. Valves V11 to V14 are provided for each branch pipe branched on the downstream side of the RPU 531. When cleaning, the corresponding valves V11 to V14 are opened. In addition, Figure 8 In FIG, for convenience, only valves V11 and V14 are shown.

[0064] The reaction gas supply source 54 and the purge gas supply source 55 are connected to the gas supply passage 52 via flow rate adjustment units M2 and M3 and valves V2 and V3, respectively. The gas supply passage 52 is connected to the gas supply pipe 51 via a gas supply pipe 510. Figure 8 In FIG. 5 , the gas supply passage 52 and the gas supply pipe 510 collectively represent the respective supply passages and the respective supply pipes corresponding to the respective gas supply units 4 .

[0065] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting table 22. When high-frequency power is applied between the shower plate 43, which serves as the upper electrode, and the mounting table 22, which serves as the lower electrode, the gas (in this example, the reaction gas) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.

[0066] Next, the exhaust path from the processing spaces S1 to S4 to the combined exhaust port 205 will be described. Figure 7 and Figure 8 As shown, the exhaust path extends from the annular flow path 363 within each guide member 362 provided at the upper portion of the processing spaces S1 to S4, through each exhaust passage 361, through the confluence portion and hole 351 at the center lower portion of the manifold 36, and to the confluence exhaust port 205. The cross-section of the exhaust passage 361 is formed into a circular shape, for example.

[0067] A guide member 362 for exhaust is provided around each processing space S1 to S4 so as to surround each processing space S1 to S4. The guide member 362 is, for example, an annular body that is spaced apart from the mounting table 22 located at the processing position and surrounds the area around the mounting table 22. The guide member 362 is configured to form a flow path 363 inside that is, for example, rectangular in longitudinal section and annular in plan view. Figure 7 , the processing spaces S1 to S4 , the guide member 362 , the exhaust passage 361 , and the manifold 36 are schematically shown.

[0068] The guide member 362 forms a slit-shaped slit exhaust port 364 that opens toward the processing spaces S1-S4. As a result, slit exhaust ports 364 are formed circumferentially around the sides of each processing space S1-S4. An exhaust passage 361 is connected to the flow path 363, directing the processing gas exhausted from the slit exhaust port 364 toward the confluence portion at the center lower portion of the manifold 36 and toward the hole 351.

[0069] like Figure 7 As shown, when viewed from the top, the processing spaces S1-S2 and S3-S4 are arranged in a 180° rotationally symmetrical arrangement around the manifold 36. Consequently, the flow paths of the processing gas from each processing space S1 to S4 via the slit exhaust port 364, the flow path 363 of the guide member 362, and the exhaust passage 361 to the hole 351 are formed in a 180° rotationally symmetrical arrangement around the hole 351.

[0070] Hole 351 is connected to exhaust pipe 61 via a combined exhaust port 205, which serves as the inner side of thrust pipe 341 of a dual-axis vacuum seal 34 disposed at the center of process vessel 20. Exhaust pipe 61 is connected to vacuum pump 62, which constitutes the vacuum exhaust mechanism, via valve mechanism 7. For example, one vacuum pump 62 is provided for each process vessel 20, and the downstream exhaust pipes of each vacuum pump 62 merge, for example, to be connected to a factory exhaust system.

[0071] The valve mechanism 7 opens and closes the flow path of the processing gas formed in the exhaust pipe 61. The valve mechanism 7 includes, for example, a housing 71 and an opening and closing portion 72. A first opening 73 connected to the exhaust pipe 61 on the upstream side is formed on the upper surface of the housing 71, and a second opening 74 connected to the exhaust pipe on the downstream side is formed on the side surface of the housing 71.

[0072] The opening and closing portion 72 includes, for example, an opening and closing valve 721 formed to a size that closes the first opening 73 and a lifting mechanism 722 provided outside the housing 71 for lifting the opening and closing valve 721 in the housing 71. The opening and closing valve 721 is configured to Figure 8 The closing position of the first opening 73 indicated by the dotted line is Figure 8 The on-off valve 721 can be raised and lowered freely between an open position, indicated by a solid line, that is set back below the first opening 73 and the second opening 74. When the on-off valve 721 is in the closed position, the downstream end of the merging exhaust port 205 is closed, and exhaust within the processing container 20 is stopped. Conversely, when the on-off valve 721 is in the open position, the downstream end of the merging exhaust port 205 is opened, and exhaust within the processing container 20 is exhausted.

[0073] Next, the biaxial vacuum seal 34 and the thrust nut 35 will be described. The biaxial vacuum seal 34 includes a thrust pipe 341 , bearings 342 and 344 , a rotor 343 , a main body 345 , magnetic fluid seals 346 and 347 , and a direct drive motor 348 .

[0074] The thrust pipe 341 is a non-rotating central axis that, through the thrust nut 35, bears the thrust load applied to the center upper portion of the substrate processing apparatus 2. Specifically, when the processing spaces S1 to S4 are set to a vacuum atmosphere, the thrust pipe 341 bears the vacuum load applied to the center portion of the substrate processing apparatus 2, thereby suppressing deformation of the upper portion of the substrate processing apparatus 2. Furthermore, the thrust pipe 341 has a hollow structure, and its interior serves as the confluent exhaust port 205. The upper surface of the thrust pipe 341 abuts against the lower surface of the thrust nut 35. Furthermore, an O-ring (not shown) is used to seal the inner surface of the upper portion of the thrust pipe 341 against the outer surface of the convex portion on the inner circumference of the thrust nut 35.

[0075] The outer circumference of the thrust nut 35 is threaded, and the thrust nut 35 is threadedly engaged with the bulkhead in the center of the processing container 20. A manifold 36 is provided above the center of the processing container 20. The thrust load is borne by the manifold 36, the bulkhead in the center of the processing container 20, the thrust nut 35, and the thrust pipe 341.

[0076] Bearing 342 is a radial bearing that holds the rotor 343 on the thrust pipe 341 side. Bearing 344 is a radial bearing that holds the rotor 343 on the main body 345 side. The rotor 343 is concentrically arranged with the thrust pipe 341 and serves as the central rotation axis of the rotary arm 3. Furthermore, the base member 33 is connected to the rotor 343. Rotation of the rotor 343 causes the rotary arm 3, that is, the end effector 32 and the base member 33, to rotate.

[0077] The main body 345 houses bearings 342 and 344, a rotor 343, magnetic fluid seals 346 and 347, and a direct drive motor 348. Magnetic fluid seals 346 and 347 are located on the inner and outer circumferences of the rotor 343, sealing the processing spaces S1 to S4 from the outside. The direct drive motor 348 is connected to the rotor 343 and drives the rotor 343, thereby rotating the rotary arm 3.

[0078] Thus, in the dual-axis vacuum seal 34 , the first axis, i.e., the thrust pipe 341 , which is a non-rotating central axis, supports the load on the upper portion of the processing container 20 and serves as a gas exhaust pipe, while the second axis, i.e., the rotor 343 , serves to rotate the rotary arm 3 .

[0079] [Operation of the Substrate Processing Apparatus]

[0080] Next, use Figure 9 The operation of the substrate processing apparatus in the embodiment will be described. Figure 9 1 is a flowchart showing the steps of processing performed by the substrate processing apparatus according to the embodiment. Figure 9 In the embodiment, a series of processes are described in which wafers W in the processing spaces S1 and S2 as the first processing space are transported to the processing spaces S3 and S4 as the second processing space and the wafers are processed in the processing spaces S3 and S4. Figure 9 The various processes shown are mainly executed based on the control of the control unit 8 .

[0081] First, a teaching is performed to align the center positions of the processing spaces S1 to S4, the center positions of the end effectors 32 of the rotary arm 3, the center positions of the mounting tables 22 in the processing spaces S1 to S4, and the center positions of the wafers W mounted on the mounting tables 22. During the teaching, for example, the center positions of the processing spaces S1 to S4 are set as reference positions. The reference positions are stored in, for example, the storage unit of the control unit 8.

[0082] Next, the wafer W located in the processing spaces S1 and S2 is placed on the rotary arm 3 (step S101). In step S101, the stages 22 of the processing spaces S1 and S2 are moved to the intersection with the lower conveying space T. Each stage 22 raises the lift pins 26 to lift the wafer W. Then, the rotary arm 3 is rotated clockwise by approximately 30° to 45° from the standby position, and the end effector 32 is inserted between the stage 22 and the wafer W at the intersection of the lower processing spaces S1 and S2. The lift pins 26 are lowered to place the wafer W on the end effector 32. In addition, the rotation angle of the rotary arm 3 at this time depends on the size of the pitch Px and the pitch Py.

[0083] Next, the rotation of the rotary arm 3 is started, and the transport of the wafer W from the processing spaces S1 and S2 to the processing spaces S3 and S4 is started (step S102 ).

[0084] While the wafer W is being transported from the processing spaces S1 and S2 to the processing spaces S3 and S4 by the rotary arm 3, the amount of positional deviation of the wafer W from the reference position is detected (step S103). In step S103, the control unit 8 calculates the amount of positional deviation of the wafer W based on, for example, the front and rear edge positions of the wafer W detected by the sensors 31a and 31b and the output of an encoder (not shown) provided on the rotary arm 3 (the rotation angle of the wafer W).

[0085] Next, based on the detected misalignment, the positions of the wafers W in the processing spaces S3 and S4 are adjusted by moving the loading tables 22 in the processing spaces S3 and S4 (step S104). In step S104, for example, the control unit 8 controls the adjustment mechanism 700 based on the detected misalignment to move the loading tables 22 in the processing spaces S3 and S4 to positions that eliminate the misalignment. This adjusts the positions of the loading tables 22 in the processing spaces S3 and S4 to coincide with the center positions of the wafers W.

[0086] Next, the rotary arm 3 rotates 180° clockwise from the processing spaces S1 and S2. When the wafer W reaches the processing spaces S3 and S4 (step S105), the wafer W is transferred to the loading table 22 in the processing spaces S3 and S4 (step S106). In step S106, when the loading table 22 at the transfer position below the processing spaces S3 and S4 raises its lift pins 26 to receive the wafer W, the rotary arm 3 rotates approximately 30° to 45° counterclockwise and moves to the standby position. At this stage, the wafer W is placed on the loading table 22 in the processing spaces S3 and S4.

[0087] Next, the positions of the mounting tables 22 in the processing spaces S3 and S4 are moved toward the center positions of the processing spaces S3 and S4, which serve as reference positions (step S107). Thus, the positions of the wafers W on the mounting tables 22 in the processing spaces S3 and S4 are adjusted to coincide with the center positions of the processing spaces S3 and S4, which serve as reference positions.

[0088] Next, wafer processing is performed in the processing spaces S3 and S4 (step S108 ), thereby completing a series of processing.

[0089] As described above, the processing module of this embodiment (e.g., substrate processing device 2, 2a) includes a processing container (e.g., processing container 20), a rotating arm (e.g., rotating arm 3), and sensors (e.g., sensors 31a to 31d). The processing container has multiple processing spaces (e.g., processing spaces S1 to S4) inside, and the centers of each of the multiple processing spaces are located on the same circumference (e.g., circumference C) and are each provided with a loading table (e.g., loading table 22). The rotating arm has multiple holding parts (e.g., end effector 32) that can hold wafers (e.g., wafer W) placed on the loading tables of the multiple processing spaces, and the rotating arm is configured to rotate with the center of the circumference as the rotation axis. The sensor is located between adjacent processing spaces and can detect the position of the wafer held by the rotating arm when the rotating arm rotates. In this way, it is possible to detect the positional deviation of the wafer during transportation within the processing container. Furthermore, when positional deviation of wafers occurs when wafers are transported to the processing module by a wafer transport mechanism (eg, substrate transport mechanisms 15a, 15b), this positional deviation can be detected together with positional deviation of wafers during transport within the processing container.

[0090] Alternatively, the sensor of the embodiment may be a set of two unit sensors, arranged on a straight line passing through the center of the circumference. Alternatively, the two unit sensors may be arranged on a straight line so as to sandwich an arc of the circumference. This can reduce detection errors caused by changes in the positional relationship between the two unit sensors due to thermal expansion of the processing container.

[0091] Alternatively, the processing module of the embodiment may further include an adjustment mechanism that moves the mounting table based on a wafer position offset calculated from the wafer position detected by the sensor, thereby correcting wafer position offset during transport within the processing container.

[0092] Alternatively, the adjustment mechanism and sensor of the embodiment may be fixed to the outer surface of the bottom of the processing container. This can suppress changes in the positional relationship between the adjustment mechanism and the sensor due to thermal expansion of the processing container.

[0093] Alternatively, the loading table of the embodiment may be capable of being raised or lowered between a processing position, where wafers placed on the loading table are processed, and a transfer position, where wafers are transferred between the respective holding portions of the rotary arm. Furthermore, the movement path of the wafers held by the rotary arm may be located closer to the bottom of the processing container than the processing position. This allows the rotary arm to move the wafers closer to the sensor during wafer transport, thereby improving the sensor's detection accuracy.

[0094] Alternatively, the rotary arm of the embodiment may transport wafers between two or more processing spaces performing different processes (e.g., between processing spaces S1 and S2 and processing spaces S3 and S4) among a plurality of processing spaces. This can shorten the time associated with wafer transport when different processes are repeatedly performed between two or more processing spaces.

[0095] In addition, in the processing method of the embodiment, the wafer located in the first processing space is placed on the rotating arm. In the processing method, while the rotating arm is rotated to transport the wafer from the first processing space to the second processing space, the offset of the wafer from the reference position is detected. In the processing method, the position of the carrier arranged in the second processing space is moved according to the offset, thereby adjusting the position of the carrier. In the processing method, the wafer is transferred from the rotating arm to the adjusted carrier. In the processing method, the position of the carrier is moved toward the center position of the second processing space as the reference position. In the processing method, wafer processing is performed in the second processing space. Thus, wafer processing can be performed in a state where the position offset of the wafer during transportation in the processing container is corrected, and as a result, a decrease in the uniformity of the processing performed on the wafer can be suppressed.

[0096] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive, and the embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and the gist thereof.

[0097] For example, in the above embodiment, the substrate processing apparatuses 2 and 2a are described as examples of apparatuses that perform plasma CVD processing as substrate processing. However, the disclosed technology can be applied to any apparatus that performs other substrate processing such as plasma etching.

[0098] Furthermore, in the above embodiment, a direct drive motor 348 is used as a driving method for the rotor 343 in the dual-axis vacuum seal 34, but the present invention is not limited to this. For example, a pulley may be provided on the rotor 343, and the rotor 343 may be driven by a motor provided outside the dual-axis vacuum seal 34 using a timing belt.

Claims

1. A processing module, wherein: The processing module has: A processing container having a plurality of processing spaces therein, wherein the centers of the plurality of processing spaces are located on the same circumference and are respectively provided with a mounting table; a rotating arm having a plurality of holding portions capable of holding wafers respectively placed on the mounting tables of the plurality of processing spaces, the rotating arm being rotatable about the center of the circumference as a rotation axis; as well as A sensor is located between adjacent processing spaces and is capable of detecting the position of the wafer held by the rotating arm during the rotating operation of the rotating arm. The processing module further includes an adjustment mechanism for moving the mounting table according to an amount of positional deviation of the wafer calculated from the position of the wafer detected by the sensor.

2. The processing module according to claim 1, wherein The sensor is a set of two unit sensors, and is arranged on a straight line passing through the center position of the circle.

3. The processing module according to claim 2, wherein: The two unit sensors are arranged on the straight line and are positioned so as to sandwich the arc of the circle.

4. The processing module according to any one of claims 1 to 3, wherein: The adjustment mechanism and the sensor are fixed to the outer surface of the bottom of the processing container.

5. The processing module according to any one of claims 1 to 3, wherein: The mounting table is movable up and down between a processing position for processing the wafer mounted on the mounting table and a transfer position for transferring the wafer to and from the holding portions of the rotary arm. A movement path of the wafer held by the rotary arm is located closer to the bottom of the processing container than the processing position.

6. The processing module according to any one of claims 1 to 3, wherein: The rotary arm transfers the wafer between two or more processing spaces among the plurality of processing spaces that perform different processes.

7. A processing method, wherein: The treatment method includes the following steps: placing the wafer located in the first processing space onto the rotating arm; detecting a positional deviation of the wafer from a reference position while the rotary arm is rotated to transport the wafer from the first processing space to the second processing space; moving a mounting table disposed in the second processing space according to the offset amount, thereby adjusting the position of the mounting table; Transferring the wafer from the rotating arm to the adjusted mounting table; moving the position of the mounting table toward the center position of the second processing space serving as the reference position; and Wafer processing is performed in the second processing space.

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