Light emitting element, display device and method for manufacturing the same

Abstract

Provided are a light-emitting element, a display device, and a method for manufacturing the same. The light-emitting element includes: a first semiconductor layer doped to have a first polarity; a second semiconductor layer doped to have a second polarity different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulating layer disposed to surround at least the outer surface of the active layer, wherein the insulating layer includes an insulating film and an element dispersant, the insulating film surrounds the active layer, and the element dispersant includes a magnetic metal and is bonded to the outer surface of the insulating film.

Description

Technical Field

[0001] The present invention relates to a light emitting element, a display device and a method for manufacturing the same. Background Art

[0002] As multimedia technology develops, the importance of display devices has steadily increased. To this end, various types of display devices, such as organic light emitting displays (OLEDs), liquid crystal displays (LCDs), etc., have been used.

[0003] The display device is a device for displaying an image, and includes a display panel, such as an organic light-emitting display panel or a liquid crystal display panel. The light-emitting display panel may include a light-emitting element, such as a light-emitting diode (LED), and examples of the light-emitting diode include an organic light-emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light-emitting diode using an inorganic material as a fluorescent material. Summary of the invention

[0004] Technical issues

[0005] Aspects of the present disclosure provide a light emitting element having an element dispersant including a magnetic metal bonded to an outer surface thereof.

[0006] Aspects of the present disclosure also provide a display device including the light emitting element and a method for manufacturing the same.

[0007] It should be noted that aspects of the present disclosure are not limited thereto, and other aspects not mentioned herein will be apparent to those skilled in the art from the following description.

[0008] Technical Solution

[0009] According to an embodiment of the present disclosure, a light-emitting element includes a first semiconductor layer doped with a first polarity, a second semiconductor layer doped with a second polarity different from the first polarity, an active layer arranged between the first semiconductor layer and the second semiconductor layer, and an insulating layer arranged to at least surround the outer surface of the active layer, wherein the insulating layer includes an insulating film and an element dispersant, the insulating film surrounds the active layer, and the element dispersant includes a magnetic metal and is bonded to the outer surface of the insulating film.

[0010] The element dispersant may include a ligand configured to form a coordination bond with the magnetic metal, and a first functional group bonded to the ligand.

[0011] The ligand may be one of a porphyrin structure and a multidentate structure, and the magnetic metal may be one of Fe, Co, Ni, Mn, and Cr.

[0012] The first functional group may form a chemical bond with the insulating film.

[0013] The first functional group may be at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group, and a phosphoric acid group.

[0014] The element dispersant may further include at least one second functional group including a hydrophobic functional group and bonded to the ligand.

[0015] The second functional group may include at least one of an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms.

[0016] The element dispersant may have a structure represented by one of the following Chemical Formulas A to D,

[0017] [Chemical formula A]

[0018]

[0019] [Chemical formula B]

[0020]

[0021] [Chemical formula C]

[0022]

[0023] [Chemical formula D]

[0024]

[0025] Where M is Fe 2+ , Mn 2+ 、Co 2+ 、Ni 2+ and Cr 2+ At least one of R 1 is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group and a phosphoric acid group, R 2 To R 4 Each of is independently one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms, n is an integer from 1 to 6, and the dotted line refers to a coordinate bond.

[0026] According to an embodiment of the present disclosure, a display device includes a first electrode and a second electrode spaced apart from and facing the first electrode, and a light-emitting element arranged between the first electrode and the second electrode, wherein the light-emitting element includes: a first semiconductor layer doped with a first polarity, a second semiconductor layer doped with a second polarity different from the first polarity, an active layer arranged between the first semiconductor layer and the second semiconductor layer, and an insulating layer arranged to at least surround the outer surface of the active layer, wherein the insulating layer includes an insulating film and an element dispersant, the element dispersant includes a magnetic metal and is bonded to the outer surface of the insulating film.

[0027] The element dispersant may include a ligand configured to form a coordination bond with the magnetic metal, a first functional group bonded to the ligand to form a chemical bond with the insulating film, and at least one second functional group including a hydrophobic functional group and bonded to the ligand.

[0028] The element dispersant may have a structure represented by one of Chemical Formula A to Chemical Formula D.

[0029] The display device may further include a first insulating layer disposed between the first electrode and the second electrode and configured to cover at least a portion of each of the first electrode and the second electrode, and a second insulating layer disposed on the first insulating layer between the first electrode and the second electrode, wherein the light-emitting element may be disposed between the first insulating layer and the second insulating layer.

[0030] The element dispersant of the light emitting element may directly contact the first insulating layer and the second insulating layer.

[0031] According to an embodiment of the present disclosure, a method for manufacturing a display device includes preparing an ink in which light-emitting elements are dispersed, each of the light-emitting elements including a semiconductor core and an insulating layer surrounding the semiconductor core, and applying a magnetic field to the light-emitting elements, preparing a target substrate on which a first electrode and a second electrode spaced apart from each other are formed, and ejecting the ink in which the light-emitting elements are dispersed onto the target substrate, and placing the light-emitting elements between the first electrode and the second electrode by generating an electric field on the target substrate.

[0032] The semiconductor core may include a first semiconductor layer doped with a first polarity, a second semiconductor layer doped with a second polarity different from the first polarity, an active layer arranged between the first semiconductor layer and the second semiconductor layer, and an insulating layer arranged to at least surround an outer surface of the active layer, wherein the insulating layer may include an insulating film and an element dispersant, the element dispersant including a magnetic metal and bonded to the outer surface of the insulating film.

[0033] A magnetic force may be applied to the magnetic metal of the element dispersant due to the magnetic field, and in the application of the magnetic field, the magnetic force may be transmitted to the light emitting element in a direction opposite to a direction of gravity.

[0034] The ink may be ejected onto the target substrate in a state in which the magnetic field is applied.

[0035] In the placement of the light emitting elements, one end portion of each of the light emitting elements may be disposed on the first electrode and the other end portion thereof on the second electrode by the electric field.

[0036] The element dispersant may include a ligand configured to form a coordination bond with the magnetic metal, a first functional group bonded to the ligand to form a chemical bond with the insulating film, and at least one second functional group including a hydrophobic functional group and bonded to the ligand.

[0037] The element dispersant may have a structure represented by one of Chemical Formula A to Chemical Formula D.

[0038] Beneficial Effects

[0039] A light-emitting element according to an embodiment includes a semiconductor core and an insulating layer surrounding the semiconductor core, and the insulating layer includes an insulating film and an element dispersant bonded to the outer surface of the insulating film. The element dispersant includes a magnetic metal and a ligand capable of forming a coordination bond with the magnetic metal. A magnetic force can be applied to the magnetic metal due to a magnetic field, and the magnetic force received by the magnetic metal can be transferred to the light-emitting element, and thus the rate at which the light-emitting element is precipitated in ink can be reduced.

[0040] Therefore, during a manufacturing process of a display device including the light emitting elements, the light emitting elements may be ejected through an inkjet printing process in a state where the light emitting elements are uniformly dispersed in the ink, and the ejected ink may include a uniform number of light emitting elements.

[0041] Furthermore, in the display device according to an embodiment, a uniform number of light emitting elements can be provided for each pixel through the above-described manufacturing process.

[0042] The effects according to the embodiment are not limited to the contents exemplified above, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a plan view of a display device according to an embodiment.

[0044] Figure 2 is a plan view illustrating one pixel of a display device according to an embodiment.

[0045] Figure 3 is along Figure 2 A cross-sectional view taken along line III-III'.

[0046] Figure 4 is a schematic diagram of a light emitting element according to an embodiment.

[0047] Figure 5 yes Figure 4 An enlarged schematic diagram of part A.

[0048] Figure 6 is a schematic diagram illustrating a case in which a magnetic field is applied to a light emitting element according to an embodiment.

[0049] Figure 7 yes Figure 6 An enlarged schematic diagram of part B.

[0050] Figure 8 is a flowchart illustrating a method of manufacturing a display device according to an embodiment.

[0051] Fig. 9 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0052] Fig.10 and Fig.11 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0053] Fig.12 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0054] Fig.13 This is an example of Fig.12 Schematic diagram of the situation in which the light emitting element is aligned during operation.

[0055] Fig.14 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0056] Fig.15 is a schematic diagram of a light emitting element according to another embodiment.

[0057] Fig.16 is a plan view illustrating one pixel of a display device according to another embodiment.

[0058] Fig.17 is a plan view illustrating one pixel of a display device according to still another embodiment. DETAILED DESCRIPTION

[0059] The present invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. However, the present invention may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0060] It will also be understood that when a layer is referred to as being 'on' another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. The same reference numerals refer to the same components throughout the specification.

[0061] It should be understood that although the terms "first", "second", etc. can be used to describe various elements in this article, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present invention, the first element discussed below can be referred to as the second element. Similarly, the second element can also be referred to as the first element.

[0062] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0063] Figure 1 is a plan view of a display device according to an embodiment.

[0064] refer to Figure 1 , the display device 10 displays a video and / or a still image. The display device 10 may refer to all electronic devices that provide a display screen. For example, the display device 10 may include a television, a laptop computer, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notepad, an electronic book reader, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a video camera, etc. that provide a display screen.

[0065] The display device 10 includes a display panel that provides a display screen. Examples of the display panel may include an inorganic light emitting diode (LED) display panel, an organic light emitting display panel, a quantum dot light emitting display panel, a plasma display panel, a field emission display panel, etc. Hereinafter, although an example in which an inorganic LED display panel is applied as an example of a display panel is described, the present invention is not limited thereto, and when the same technical gist is applicable, it may be applicable to other display panels.

[0066] The shape of the display device 10 may be variously modified. For example, the display device 10 may have a shape such as a rectangular shape with long lateral sides, a rectangular shape with long longitudinal sides, a square shape, a quadrilateral shape whose corners (vertices) are rounded, other polygonal shapes, a circular shape, etc. The shape of the display area DPA of the display device 10 may also be similar to the overall shape of the display device 10. Figure 1 , a rectangular display device 10 having long lateral sides and a display area DPA are illustrated.

[0067] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA is an area where an image may be displayed, and the non-display area NDA is an area where an image is not displayed. The display area DPA may refer to an active area, and the non-display area NDA may refer to a non-active area. The display area DPA may generally occupy the center of the display device 10.

[0068] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix shape. The shape of each of the pixels PX may be a rectangular shape or a square shape in a plan view, but the present invention is not limited thereto, and the shape may be an oblique square shape in which each side is inclined relative to one direction. The pixels PX may be alternately arranged in a stripe type or a wave tile type. In addition, each of the pixels PX may include one or more light emitting elements 300. (See Figure 2 ) , the light emitting element 300 emits light in a specific wavelength range, thereby displaying a specific color.

[0069] The non-display area NDA may be disposed around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA has a rectangular shape, and the non-display area NDA may be disposed adjacent to four sides of the display area DPA. The non-display area NDA may form a frame of the display device 10. In each non-display area NDA, a line or circuit driving component included in the display device 10 may be disposed, or an external device may be installed.

[0070] Figure 2 is a plan view illustrating one pixel of a display device according to an embodiment. Figure 3 is along Figure 2 A cross-sectional view taken along line III-III'.

[0071] refer to Figure 2 , each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light of a first color, the second sub-pixel PX2 may emit light of a second color, and the third sub-pixel PX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, the present invention is not limited thereto, and the sub-pixels PXn may emit light having the same color. In addition, in Figure 2 In the embodiment, the pixel PX is illustrated as including three sub-pixels PXn, but is not limited thereto, and the pixel PX may include a greater number of sub-pixels PXn.

[0072] Each of the sub-pixels PXn of the display device 10 may include an area defined as a light emitting area EMA. The first sub-pixel PX1 may include a first light emitting area EMA1, the second sub-pixel PX2 may include a second light emitting area EMA2, and the third sub-pixel PX3 may include a third light emitting area EMA2. The light emitting area EMA may be defined as an area in which the light emitting element 300 included in the display device 10 is arranged to emit light of a specific wavelength range. The light emitting element 300 includes an active layer 330 (see Figure 4 ), and the active layer 330 may emit light of a specific wavelength range without directionality. The light emitted from the active layer 330 of the light emitting element 300 may also be emitted in a direction toward the side surface of the light emitting element 300 including both ends thereof. The light emitting area EMA may include a region in which the light emitting element 300 is disposed, and may include a region adjacent to the light emitting element 300 and through which light emitted from the light emitting element 300 is emitted.

[0073] The present invention is not limited thereto, and the emission area EMA may also include an area where light emitted from the light emitting element 300 is emitted due to reflection or refraction of another member. A plurality of light emitting elements 300 may be provided in each sub-pixel PXn, and the area where the light emitting element 300 is provided and an area adjacent to the area form the emission area EMA.

[0074] Although not shown in the drawings, each of the subpixels PXn of the display device 10 may include a non-luminous region defined as a region other than the luminous region EMA. The non-luminous region may be a region where the luminous element 300 is not disposed and where light emitted from the luminous element 300 does not reach and thus does not emit light.

[0075] Figure 3 For example only Figure 2 2 is a cross section of a first subpixel PX1, but the cross section may be similarly applicable to other pixels PX or subpixels PXn. Figure 3 For example, from the setting Figure 2 A cross section of the light emitting element 300 in the first sub-pixel PX1 extending from one end portion to the other end portion.

[0076] Combination Figure 2 refer to Figure 3 , the display device 10 may include a circuit element layer and a display element layer disposed on a first substrate 101. A semiconductor layer, a plurality of conductive layers, and a plurality of insulating layers are disposed on the first substrate 101, each of which may constitute a circuit element layer and a display element layer. The plurality of conductive layers may include a first gate conductive layer, a second gate conductive layer, a first data conductive layer, and a second data conductive layer disposed under the first planarization layer 109 to form a circuit element layer, and electrodes 210 and 220 and a contact electrode 260 disposed on the first planarization layer 109 to form a display element layer. The plurality of insulating layers may include a buffer layer 102, a first gate insulating layer 103, a first protective layer 105, a first interlayer insulating layer 107, a second interlayer insulating layer 108, a first planarization layer 109, a first insulating layer 510, a second insulating layer 520, a third insulating layer 530, a fourth insulating layer 550, and the like.

[0077] The circuit element layer may include circuit elements and multiple lines for driving the light emitting element 300, such as a driving transistor DT, a switching transistor ST, a first conductive pattern CDP, and multiple voltage lines VDL and VSL, and the display element layer may include the light emitting element 300 and include a first electrode 210, a second electrode 220, a first contact electrode 261, a second contact electrode 262, etc.

[0078] The first substrate 101 may be an insulating substrate. The first substrate 101 may be made of an insulating material such as glass, quartz, polymer resin, etc. In addition, the first substrate 101 may be a rigid substrate, but may also be a flexible substrate that is bendable, foldable, rollable, etc.

[0079] The light blocking layers BML1 and BML2 may be disposed on the first substrate 101. The light blocking layers BML1 and BML2 may include a first light blocking layer BML1 and a second light blocking layer BML2. The first light blocking layer BML1 and the second light blocking layer BML2 are disposed to overlap at least the first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST, respectively. The light blocking layers BML1 and BML2 may contain a light blocking material to prevent light from being incident on the first and second active material layers DT_ACT and ST_ACT. As an example, the first and second light blocking layers BML1 and BML2 may be made of an opaque metal material that blocks light transmission. However, the present invention is not limited thereto, and in some cases, the light blocking layers BML1 and BML2 may be omitted. Although not shown in the drawings, the first light blocking layer BML1 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT, which will be described below, and the second light blocking layer BML2 may be electrically connected to the first source / drain electrode ST_SD1 of the switching transistor ST.

[0080] The buffer layer 102 may be completely disposed on the first substrate 101, including the light blocking layers BML1 and BML2. The buffer layer 102 may be formed on the first substrate 101 to protect the transistors DT and ST of the pixel PX from moisture penetration through the first substrate 101 (which is susceptible to moisture penetration), and may perform a surface planarization function. The buffer layer 102 may be formed as a plurality of inorganic layers alternately stacked. For example, the buffer layer 102 may be formed as a layer containing silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) are a plurality of layers in which inorganic layers of at least one of the above-mentioned types are alternately stacked.

[0081] The semiconductor layer is disposed on the buffer layer 102. The semiconductor layer may include a first active material layer DT_ACT of the driving transistor DT and a second active material layer ST_ACT of the switching transistor ST. The first active material layer DT_ACT and the second active material layer ST_ACT may be disposed to partially overlap gate electrodes DT_G and ST_G of a first gate conductive layer to be described below.

[0082] In an exemplary embodiment, the semiconductor layer may include polycrystalline silicon, single crystal silicon, an oxide semiconductor, etc. Polycrystalline silicon may be formed by crystallizing amorphous silicon. Examples of crystallization methods may include rapid thermal annealing (RTA) methods, solid phase crystallization (SPC) methods, excimer laser annealing (ELA) methods, metal induced lateral crystallization (MILC) methods, and sequential lateral solidification (SLS) methods, etc., but the present invention is not limited thereto. When the semiconductor layer includes polycrystalline silicon, the first active material layer DT_ACT may include a first doped region DT_ACTa, a second doped region DT_ACTb, and a first channel region DT_ACTc. The first channel region DT_ACTc may be disposed between the first doped region DT_ACTa and the second doped region DT_ACTb. The second active material layer ST_ACT may include a third doped region ST_ACTa, a fourth doped region ST_ACTb, and a second channel region ST_ACTc. The second channel region ST_ACTc may be disposed between the third doped region ST_ACTa and the fourth doped region ST_ACTb. The first, second, third, and fourth doped regions DT_ACTa, DT_ACTb, ST_ACTa, and ST_ACTb may be regions in which partial regions of the first and second active material layers DT_ACT and ST_ACT are doped with impurities.

[0083] In an exemplary embodiment, the first active material layer DT_ACT and the second active material layer ST_ACT may include an oxide semiconductor. In this case, the doped region of each of the first active material layer DT_ACT and the second active material layer ST_ACT may be a region that already has conductivity. The oxide semiconductor may be an oxide semiconductor containing indium (In). In some embodiments, the oxide semiconductor may include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), indium gallium zinc tin oxide (IGZTO), etc. However, the present invention is not limited thereto.

[0084] The first gate insulating layer 103 is disposed on the semiconductor layer and the buffer layer 102. The first gate insulating layer 103 may be disposed on the buffer layer 102 including the semiconductor layer. The first gate insulating layer 103 may be used as a gate insulating layer of the driving transistor DT and the switching transistor ST. The first gate insulating layer 103 may be formed to include an inorganic material (e.g., silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y )) of an inorganic layer, or a stacked structure thereof.

[0085] The first gate conductive layer is disposed on the first gate insulating layer 103. The first gate conductive layer may include a first gate electrode DT_G of the driving transistor DT and a second gate electrode ST_G of the switching transistor ST. The first gate electrode DT_G is disposed to overlap at least a portion of the first active material layer DT_ACT, and the second gate electrode ST_G is disposed to overlap at least a portion of the second active material layer ST_ACT. For example, the first gate electrode DT_G may be disposed to overlap a first channel region DT_ACTc of the first active material layer DT_ACT in a thickness direction, and the second gate electrode ST_G may be disposed to overlap a second channel region ST_ACTc of the second active material layer ST_ACT in a thickness direction.

[0086] The first gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the present invention is not limited thereto.

[0087] The first protective layer 105 is disposed on the first gate conductive layer. The first protective layer 105 may be disposed to cover the first gate conductive layer and may perform a function of protecting the first gate conductive layer. The first protective layer 105 may be formed to include an inorganic material (e.g., silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y )) of an inorganic layer, or a stacked structure thereof.

[0088] The second gate conductive layer is disposed on the first protective layer 105. The second gate conductive layer may include a first capacitor electrode CE1 of a storage capacitor, which is disposed so that at least a partial area thereof overlaps the first gate electrode DT_G in the thickness direction. The first capacitor electrode CE1 and the first gate electrode DT_G may overlap each other in the thickness direction, with the first protective layer 105 interposed therebetween, and a storage capacitor may be formed therebetween. The second gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. However, the present invention is not limited thereto.

[0089] The first interlayer insulating layer 107 is disposed on the second gate conductive layer. The first interlayer insulating layer 107 may be used as an insulating layer between the second gate conductive layer and other layers disposed thereon. The first interlayer insulating layer 107 may be formed to include an inorganic material (e.g., silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiOx N y )) of an inorganic layer, or a stacked structure thereof.

[0090] The first data conductive layer is disposed on the first interlayer insulating layer 107. The first gate conductive layer may include first and second source / drain electrodes DT_SD1 and DT_SD2 of the driving transistor DT and first and second source / drain electrodes ST_SD1 and ST_SD2 of the switching transistor ST.

[0091] The first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT may contact the first doped region DT_ACTa and the second doped region DT_ACTb of the first active material layer DT_ACT, respectively, through contact holes passing through the first interlayer insulating layer 107 and the first gate insulating layer 103. The first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST may contact the third doped region ST_ACTa and the fourth doped region ST_ACTb of the second active material layer ST_ACT, respectively, through contact holes passing through the first interlayer insulating layer 107 and the first gate insulating layer 103. In addition, the first source / drain electrode DT_SD1 of the driving transistor DT and the first source / drain electrode ST_SD1 of the switching transistor ST may be electrically connected to the first light blocking layer BML1 and the second light blocking layer BML2, respectively, through other contact holes. Meanwhile, in the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 and ST_SD2 of the driving transistor DT and the switching transistor ST, when one electrode is a source electrode, the other electrode may be a drain electrode. However, the present invention is not limited thereto, and in the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 or ST_SD2, when one electrode is a drain electrode, the other electrode may be a source electrode.

[0092] The first data conducting layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the present invention is not limited thereto.

[0093] The second interlayer insulating layer 108 may be disposed on the first data conducting layer. The second interlayer insulating layer 108 may be completely disposed on the first interlayer insulating layer 107, while covering the first data conducting layer and may be used to protect the first data conducting layer. The second interlayer insulating layer 108 may be formed to include an inorganic material (e.g., silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiOx N y )) of an inorganic layer, or a stacked structure thereof.

[0094] The second data conducting layer is disposed on the second interlayer insulating layer 108. The second data conducting layer may include a second voltage line, a first voltage line, and a first conductive pattern CDP. A high potential voltage (first power supply voltage VDD) supplied to the driving transistor DT may be applied to the first voltage line, and a low potential voltage (second power supply voltage VSS) supplied to the second electrode 220 may be applied to the second voltage line. During the manufacturing process of the display device 10, an alignment signal necessary for aligning the light emitting element 300 may be applied to the second voltage line.

[0095] The first conductive pattern CDP may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through a contact hole formed in the second interlayer insulating layer 108. The first conductive pattern CDP may also contact a first electrode 210 to be described below, and the driving transistor DT may transmit a first power supply voltage VDD applied by a first voltage line to the first electrode 210 through the first conductive pattern CDP. Meanwhile, in the drawings, the second data conductive layer is illustrated as including one first voltage line and one second voltage line, but the present invention is not limited thereto. The second data conductive layer may include a larger number of first voltage lines and a larger number of second voltage lines.

[0096] The second data conducting layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or alloys thereof. However, the present invention is not limited thereto.

[0097] The first planarization layer 109 is disposed on the second data conducting layer. The first planarization layer 109 may include an organic insulating material, for example, an organic material such as polyimide (PI), and may perform a surface planarization function.

[0098] The inner blocks 410 and 420, the plurality of electrodes 210 and 220, the outer block 450, the plurality of contact electrodes 260, and the light emitting element 300 are disposed on the first planarization layer 109. In addition, a plurality of insulating layers 510, 520, 530, and 550 may be further disposed on the first planarization layer 109.

[0099] The inner blocks 410 and 420 are disposed directly on the first planarization layer 109. The inner blocks 410 and 420 may include a first inner block 410 and a second inner block 420 disposed adjacent to a central portion of each pixel PX or sub-pixel PXn.

[0100] like Figure 2As shown in the figure, the first internal block 410 and the second internal block 420 may be arranged to be spaced apart from each other and face each other in the first direction DR1. In addition, the first internal block 410 and the second internal block 420 may extend in the second direction DR2, and may be spaced apart from each other and terminate at the boundary between the sub-pixels PXn so as not to extend to another sub-pixel PXn adjacent in the second direction DR2. Therefore, the first internal block 410 and the second internal block 420 may be arranged in each sub-pixel PXn to form a pattern on the entire surface of the display device 10. By arranging the internal blocks 410 and 420 to be spaced apart from each other and face each other, an area in which the light emitting element 300 is arranged may be formed therebetween. In the accompanying drawings, it is illustrated that one first internal block 410 and one second internal block 420 are arranged, but the present invention is not limited thereto. In some cases, each internal block 410 and 420 may be arranged in plurality, or a greater number of internal blocks 410 and 420 may be further arranged according to the number of electrodes 210 and 220, which will be described below.

[0101] In addition, if Figure 3 As shown in FIG. 1 , each of the first inner block 410 and the second inner block 420 may have a structure in which at least a portion of the first inner block 410 and the second inner block 420 protrudes relative to the upper surface of the first planarization layer 109. The protruding portion of each of the first inner block 410 and the second inner block 420 may have an inclined side surface, and light emitted from the light emitting element 300 disposed between the first inner block 410 and the second inner block 420 may travel toward the inclined side surfaces of the inner blocks 410 and 420. As will be described below, when the electrodes 210 and 220 respectively disposed on the inner blocks 410 and 420 contain a material having a high reflectivity, light emitted from the light emitting element 300 may be reflected by the side surfaces of the inner blocks 410 and 420 to be emitted in an upward direction relative to the first substrate 101. That is, the inner blocks 410 and 420 may provide a region in which the light emitting element 300 is disposed, and at the same time may function as a reflective partition wall that reflects light emitted by the light emitting element 300 upward. In an exemplary embodiment, the inner blocks 410 and 420 may include an organic insulating material such as polyimide (PI), but the present invention is not limited thereto.

[0102] The plurality of electrodes 210 and 220 are disposed on the inner blocks 410 and 420 and the first planarization layer 109. The plurality of electrodes 210 and 220 may include a first electrode 210 disposed on the first inner block 410 and a second electrode 220 disposed on the second inner block 420.

[0103] like Figure 2, the first electrode 210 may be disposed in each sub-pixel PXn in the form of extending in the second direction DR2. However, the first electrode 210 may not extend to another sub-pixel PXn adjacent in the second direction DR2, and may be disposed to be partially spaced apart from the outer block 450 surrounding each sub-pixel PXn. At least a partial area of ​​the first electrode 210 is disposed to overlap the outer block 450, and the first electrode 210 may be electrically connected to the driving transistor DT in the area overlapping the outer block 450. For example, the first electrode 210 may contact the first conductive pattern CDP through the first contact hole CT1 formed in the area overlapping the outer block 450 and passing through the first planarization layer 109, and the first electrode 210 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through the first conductive pattern CDP.

[0104] The second electrode 220 may be arranged to extend in the second direction DR2 in each sub-pixel PXn. Unlike the first electrode 210, the second electrode 220 may be arranged to extend to another sub-pixel PXn adjacent in the second direction DR2. That is, one connected second electrode 220 may be arranged in a plurality of sub-pixels PXn adjacent in the second direction DR2. The second electrode 220 may partially overlap the external block 450 at the boundary of the sub-pixels PXn adjacent in the second direction DR2, and the second electrode 220 may be electrically connected to the second voltage line in the region overlapping the external block 450. For example, the second electrode 220 may contact the second voltage line through the second contact hole CT2 formed in the region overlapping the external block 450 and passing through the first planarization layer 109. As shown in the drawings, the second electrodes 220 of the sub-pixels PXn adjacent in the first direction DR1 are electrically connected to the second voltage line through the second contact holes CT2, respectively.

[0105] However, the present invention is not limited thereto. In some cases, each of the first electrode 210 and the second electrode 220 may further include a trunk portion extending in the first direction DR1. In the first electrode 210, a different trunk portion may be provided for each sub-pixel PXn, and in the second electrode 220, one trunk portion extends to the sub-pixel PXn adjacent in the first direction DR1, so that the second electrodes 220 of the sub-pixels PXn may be electrically connected to each other through the trunk portion. In this case, the second electrode 220 may be electrically connected to the second voltage line in the non-display area NDA located at the peripheral portion of the display area DPA in which a plurality of pixels PX or sub-pixels PXn are provided.

[0106] Meanwhile, in the drawings, it is illustrated that one first electrode 210 and one second electrode 220 are provided in each sub-pixel PXn, but the present invention is not limited thereto. In some embodiments, a larger number of first electrodes 210 and second electrodes 220 may be provided in each sub-pixel PXn. In addition, the first electrode 210 and the second electrode 220 provided in each sub-pixel PXn may not necessarily have a shape extending in one direction, and the first electrode 210 and the second electrode 220 may be provided in various structures. For example, the first electrode 210 and the second electrode 220 may each have a partially bent or bent shape, and one of the first electrode 210 and the second electrode 220 may be provided to surround the other electrode therein. As long as at least a portion of each of the first electrode 210 and at least a portion of the second electrode 220 are spaced apart from each other and face each other to form a region in which the light emitting element 300 is to be provided therebetween, the arrangement structure and shape of the first electrode 210 and the second electrode 220 are not particularly limited.

[0107] The plurality of electrodes 210 and 220 may be electrically connected to the light emitting element 300, and may receive a predetermined voltage to cause the light emitting element 300 to emit light. For example, the plurality of electrodes 210 and 220 may be electrically connected to the light emitting element 300 through a contact electrode 260 to be described below, and an electrical signal applied to the electrodes 210 and 220 may be transmitted to the light emitting element 300 through the contact electrode 260.

[0108] In an exemplary embodiment, the first electrode 210 may be a pixel electrode separated for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. One of the first electrode 210 and the second electrode 220 may be an anode of the light emitting element 300, and the other may be a cathode of the light emitting element 300. However, the present invention is not limited thereto, and the opposite case described above may also be feasible.

[0109] In addition, each of the electrodes 210 and 220 may be used to form an electric field in the sub-pixel PXn, thereby aligning the light emitting element 300. The light emitting element 300 may be disposed between the first electrode 210 and the second electrode 220 by a process of forming an electric field between the first electrode 210 and the second electrode 220 by applying an alignment signal to the first electrode 210 and the second electrode 220. As will be described below, the light emitting element 300 may be ejected onto the first electrode 210 and the second electrode 220 by an inkjet printing process in a state of being dispersed in ink, and may be aligned between the first electrode 210 and the second electrode 220 by a method of applying a dielectrophoretic force to the light emitting element 300 by applying an alignment signal between the first electrode 210 and the second electrode 220.

[0110] like Figure 3 As shown in FIG. 1 , the first electrode 210 and the second electrode 220 may be disposed on the first inner block 410 and the second inner block 420, respectively, and may be spaced apart from each other in the first direction DR1 and may face each other. A plurality of light emitting elements 300 may be disposed between the first inner block 410 and the second inner block 420, and the light emitting element 300 may be disposed between the first electrode 210 and the second electrode 220, and simultaneously, at least one end portion of the light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220.

[0111] In some embodiments, the first electrode 210 and the second electrode 220 may be formed to have a greater width than the first inner block 410 and the second inner block 420, respectively. For example, the first electrode 210 and the second electrode 220 may be disposed to cover the outer surfaces of the first inner block 410 and the second inner block 420, respectively. The first electrode 210 and the second electrode 220 may be disposed on the side surfaces of the first inner block 410 and the second inner block 420, respectively, and the separation distance between the first electrode 210 and the second electrode 220 may be less than the separation distance between the first inner block 410 and the second inner block 420. In addition, at least a partial area of ​​each of the first electrode 210 and the second electrode 220 may be disposed directly on the first planarization layer 109.

[0112] Each of the electrodes 210 and 220 may include a transparent conductive material. As an example, each of the electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), etc., but the present invention is not limited thereto. In some embodiments, each of the electrodes 210 and 220 may include a conductive material having a high reflectivity. For example, each of the electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), aluminum (Al), etc. as a material having a high reflectivity. In this case, each of the electrodes 210 and 220 may reflect light emitted from the light emitting element 300 and traveling to the side surfaces of the first internal block 410 and the second internal block 420 in an upward direction relative to each sub-pixel PXn.

[0113] The present invention is not limited thereto, and each of the electrodes 210 and 220 may be formed into a structure in which one or more transparent conductive material layers and a metal layer having high reflectivity are stacked, or may be formed into a single layer including a transparent conductive material and a metal. In an exemplary embodiment, each of the electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy including Al, Ni, lanthanum (La), etc.

[0114] The first insulating layer 510 is disposed on the first planarization layer 109, the first electrode 210, and the second electrode 220. The first insulating layer 510 may be disposed on the side opposite to the area between the internal blocks 410 and 420 with respect to the internal blocks 410 and 420, except for the area between the electrodes 210 and 220 or between the internal blocks 410 and 420 spaced apart from each other. In addition, the first insulating layer 510 is disposed to partially cover the first electrode 210 and the second electrode 220. For example, the first insulating layer 510 may be completely disposed on the first planarization layer 109, including the first electrode 210 and the second electrode 220, and may be disposed to expose a portion of the upper surface of each of the first electrode 210 and the second electrode 220. An opening (not shown) partially exposing the first electrode 210 and the second electrode 220 may be formed in the first insulating layer 510, and the first insulating layer 510 may be disposed to cover only one side and the other side of each of the first electrode 210 and the second electrode 220. Some of the first and second electrodes 210 and 220 disposed on the inner blocks 410 and 420 may be partially exposed due to the openings.

[0115] The first insulating layer 510 can protect the first electrode 210 and the second electrode 220, and simultaneously insulate the first electrode 210 from the second electrode 220. In addition, the light emitting element 300 disposed on the first insulating layer 510 can be prevented from being damaged due to direct contact with other members. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0116] In an exemplary embodiment, a stepped portion may be formed on a portion of the upper surface of the first insulating layer 510 between the first electrode 210 and the second electrode 220. In some embodiments, the first insulating layer 510 may include an inorganic insulating material, and a portion of the upper surface of the first insulating layer 510 disposed to partially cover the first electrode 210 and the second electrode 220 may be stepped due to the stepped portion formed by the electrodes 210 and 220 disposed below the first insulating layer 510. Therefore, an empty space may be formed between the light emitting element 300 disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220 and the upper surface of the first insulating layer 510. The empty space may be filled with a material forming the second insulating layer 520 to be described below.

[0117] However, the present invention is not limited thereto. The first insulating layer 510 may be formed so that a portion of the first insulating layer 510 disposed between the first electrode 210 and the second electrode 220 has a flat upper surface. The upper surface extends in one direction toward the first electrode 210 and the second electrode 220, and the first insulating layer 510 may also be disposed in an area where the electrodes 210 and 220 overlap the inclined side surfaces of the first inner block 410 and the second inner block 420, respectively. The contact electrode 260 to be described below may contact the exposed areas of the first electrode 210 and the second electrode 220, and may smoothly contact the end portion of the light emitting element 300 on the flat upper surface of the first insulating layer 510.

[0118] The outer block 450 may be disposed on the first insulating layer 510. Figure 2 and Figure 3 , the outer block 450 may be disposed at the boundary between the sub-pixels PXn. The outer block 450 may be disposed to extend at least in the second direction DR2 to surround the inner blocks 410 and 420 and some of the electrodes 210 and 220, including a region in which the light emitting element 300 is disposed between the inner blocks 410 and 420 and between the electrodes 210 and 220. In addition, the outer block 450 may further include a portion extending in the first direction DR1, and may form a grid pattern on the entire surface of the display area DPA.

[0119] According to one embodiment, the height of the outer block 450 may be greater than the height of each of the inner blocks 410 and 420. Unlike the inner blocks 410 and 420, the outer block 450 may separate adjacent sub-pixels PXn, and simultaneously, as will be described below, prevent ink from overflowing to adjacent sub-pixels PXn during the inkjet printing process for setting the light-emitting element 300 during the manufacturing process of the display device 10. That is, the outer block 450 may separate inks in which different light-emitting elements 300 are dispersed from each other in different sub-pixels PXn so as to prevent the inks from mixing with each other. Like the inner blocks 410 and 420, the outer block 450 may include polyimide (PI), but the present invention is not limited thereto.

[0120] The light emitting element 300 may be disposed in a region formed between the first electrode 210 and the second electrode 220 or between the first inner block 410 and the second inner block 420. One end portion of the light emitting element 300 may be electrically connected to the first electrode 210, and the other end portion thereof may be electrically connected to the second electrode 220. The light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220 through the contact electrodes 260, respectively.

[0121] A plurality of light emitting elements 300 may be arranged to be spaced apart from each other and aligned to be substantially parallel to each other. The separation distance between the light emitting elements 300 is not particularly limited. In some cases, a plurality of light emitting elements 300 may be arranged adjacent to each other to form a group, and a plurality of other light emitting elements 300 may be grouped in a state spaced apart at predetermined intervals, and may be oriented and aligned in one direction with uneven density. In addition, in an exemplary embodiment, the light emitting element 300 may have a shape extending in one direction, and the direction in which each of the electrodes 210 and 220 extends may be substantially perpendicular to the direction in which the light emitting element 300 extends. However, the present invention is not limited thereto, and the light emitting element 300 may be arranged obliquely, without being perpendicular to the direction in which each of the electrodes 210 and 220 extends.

[0122] The light emitting element 300 according to an embodiment may include an active layer 330 having different materials to emit light of different wavelength ranges to the outside. The display device 10 according to an embodiment may include a light emitting element 300 that emits light of different wavelength ranges. The light emitting element 300 of the first sub-pixel PX1 may include an active layer 330 that emits light of a first color having a first wavelength at a central wavelength band, the light emitting element 300 of the second sub-pixel PX2 may include an active layer 330 that emits light of a second color having a second wavelength at a central wavelength band, and the light emitting element 300 of the third sub-pixel PX3 may include an active layer 330 that emits light of a third color having a third wavelength at a central wavelength band.

[0123] Thus, light of a first color may be emitted from the first subpixel PX1, light of a second color may be emitted from the second subpixel PX2, and light of a third color may be emitted from the third subpixel PX3. In some embodiments, light of the first color may be blue light having a central wavelength band of 450 nm to 495 nm, light of the second color may be green light having a central wavelength band of 495 nm to 570 nm, and light of the third color may be red light having a central wavelength band of 620 nm to 752 nm. However, the present invention is not limited thereto. In some cases, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include the same type of light emitting element 300 to emit light of substantially the same color.

[0124] The light emitting element 300 may be disposed on a region between the inner blocks 410 and 420, or on the first insulating layer 510 between the electrodes 210 and 220. For example, the light emitting element 300 may be disposed on the first insulating layer 510 disposed between the inner blocks 410 and 420. The light emitting element 300 may be disposed so that a partial region thereof overlaps each of the electrodes 210 and 220 in the thickness direction. One end portion of the light emitting element 300 may overlap the first electrode 210 in the thickness direction and may be disposed on the first electrode 210, and the other end portion thereof may overlap the second electrode 220 in the thickness direction and may be disposed on the second electrode 220. However, the present invention is not limited thereto, and although not shown in the drawings, at least some of the light emitting elements 300 disposed in each sub-pixel PXn may be disposed in a region other than the region formed between the inner blocks 410 and 420, for example, between the inner blocks 410 and 420 and the outer block 450.

[0125] The light emitting element 300 may include a plurality of layers arranged therein in a direction parallel to the upper surface of the first substrate 101 or the first planarization layer 109. The light emitting element 300 of the display device 10 according to an embodiment may have a shape extending in one direction, and have a structure in which a plurality of semiconductor layers are sequentially arranged in one direction. The light emitting element 300 may be arranged so that a direction in which the light emitting element 300 extends is parallel to the first planarization layer 109, and a plurality of semiconductor layers included in the light emitting element 300 may be sequentially arranged in a direction parallel to the upper surface of the first planarization layer 109. However, the present invention is not limited thereto. In some cases, when the light emitting element 300 has a different structure, a plurality of layers may be arranged in a direction perpendicular to the first planarization layer 109.

[0126] Meanwhile, as described above, during the manufacturing process of the display device 10, the light emitting element 300 may be ejected onto the first electrode 210 and the second electrode 220 by an inkjet printing process in a state of being dispersed in ink. Then, when an alignment signal is applied to the electrodes 210 and 220, an electric field is formed due to the alignment signal, so that the light emitting element 300 may receive a dielectrophoretic force to be aligned between the electrodes 210 and 220. Here, the light emitting element 300 according to an embodiment may include a plurality of semiconductor layers or insulating layers 380 (see Figure 4 ), and the insulating layer 380 may include an insulating film 381 (see Figure 5 ) and an element dispersant 385 containing a magnetic metal and bonded to the insulating film 381 (see Figure 5). Due to the magnetic field applied from the outside, a magnetic force may be applied to the magnetic metal included in the element dispersant 385, and the magnetic force may be transferred to the light emitting element 300. According to the direction of the magnetic force, the light emitting element 300 may be maintained in a dispersed state in the ink for a long time. Therefore, the light emitting element 300 according to an embodiment may be maintained in a dispersed state during the manufacturing process of the display device 10 without being precipitated in the ink, and may have a uniform degree of dispersion in the ink ejected onto the first electrode 210 and the second electrode 220. A detailed description of the structure of the light emitting element 300 will be provided below with reference to other drawings.

[0127] The second insulating layer 520 may be partially disposed on the light emitting element 300 disposed between the first electrode 210 and the second electrode 220. That is, the second insulating layer 520 may be disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220, and the light emitting element 300 may be disposed between the first insulating layer 510 and the second insulating layer 520. In the exemplary embodiment, in the light emitting element 300, the insulating layer 380 (see Figure 4 ) may directly contact the first insulating layer 510 and the second insulating layer 520. For example, the second insulating layer 520 may be provided to partially surround the outer surface of the light emitting element 300 and thus may protect the light emitting element 300, and simultaneously, may fix the light emitting element 300 during the manufacturing process of the display device 10. Therefore, the element dispersant 385 of the light emitting element 300 may directly contact each of the first insulating layer 510 and the second insulating layer 520.

[0128] In a plan view, a portion of the second insulating layer 520 disposed on the light emitting element 300 may have a shape extending in the second direction DR2 between the first electrode 210 and the second electrode 220. As an example, the second insulating layer 520 may form a stripe or island pattern in each subpixel PXn.

[0129] The second insulating layer 520 may be disposed on the light emitting element 300, and may expose one end portion and the other end portion of the light emitting element 300. The exposed end portion of the light emitting element 300 may contact the contact electrode 260 to be described below. Such a shape of the second insulating layer 520 may be formed by a patterning process using a material forming the second insulating layer 520 using a typical mask process. The mask for forming the second insulating layer 520 has a width less than the length of the light emitting element 300, and the material forming the second insulating layer 520 is patterned to expose both end portions of the light emitting element 300. However, the present invention is not limited thereto.

[0130] In addition, in an exemplary embodiment, a portion of the material of the second insulating layer 520 may be disposed between the first insulating layer 510 and the lower surface of the light emitting element 300. The second insulating layer 520 may be formed to fill a space between the first insulating layer 510 and the light emitting element 300 formed during a manufacturing process of the display device 10. Thus, the second insulating layer 520 may be formed to partially surround the outer surface of the light emitting element 300. However, the present invention is not limited thereto.

[0131] A plurality of contact electrodes 260 and a third insulating layer 530 may be disposed on the second insulating layer 520 .

[0132] like Figure 2 As shown in FIG. 1 , the plurality of contact electrodes 260 may each have a shape extending in one direction. The plurality of contact electrodes 260 may contact the respective electrodes 210 and 220 and the light emitting element 300 , and the light emitting element 300 may receive electrical signals from the first electrode 210 and the second electrode 220 through the contact electrodes 260 .

[0133] The contact electrode 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 may be disposed on the first electrode 210 and the second electrode 220, respectively. The first contact electrode 261 may be disposed on the first electrode 210, the second contact electrode 262 may be disposed on the second electrode 220, and the first contact electrode 261 and the second contact electrode 262 may each have a shape extending in the second direction DR2. The first contact electrode 261 and the second contact electrode 262 may be spaced apart from each other in the first direction DR1 and face each other, and may form a stripe pattern in the emission area EMA of each subpixel PXn.

[0134] In some embodiments, the width of each of the first contact electrode 261 and the second contact electrode 262 measured in one direction may be greater than or equal to the width of each of the first electrode 210 and the second electrode 220 measured in one direction. The first contact electrode 261 and the second contact electrode 262 may be disposed to contact one end portion and the other end portion of the light emitting element 300, respectively, and simultaneously, cover both side surfaces of the first electrode 210 and the second electrode 220, respectively. As described above, the upper surface of each of the first electrode 210 and the second electrode 220 may be partially exposed, and the first contact electrode 261 and the second contact electrode 262 may contact the exposed upper surfaces of the first electrode 210 and the second electrode 220, respectively. For example, the first contact electrode 261 may contact a portion of the first electrode 210 positioned on the first inner block 410, and the second contact electrode 262 may contact a portion of the second electrode 220 positioned on the second inner block 420. However, the present invention is not limited thereto, and in some cases, the widths of the first contact electrode 261 and the second contact electrode 262 may be formed to be smaller than the widths of the first electrode 210 and the second electrode 220, respectively, and the first contact electrode 261 and the second contact electrode 262 may be disposed to cover the exposed portions of the upper surfaces of the first electrode 210 and the second electrode 220, respectively. Figure 3 As shown in FIG. 5 , at least a partial region of each of the first contact electrode 261 and the second contact electrode 262 is disposed on the first insulating layer 510 .

[0135] According to one embodiment, the light emitting element 300 has a semiconductor layer whose two end surfaces are exposed in the extension direction, and the first contact electrode 261 and the second contact electrode 262 may contact the light emitting element 300 on the end surfaces where the semiconductor layer is exposed. However, the present invention is not limited thereto. In some cases, both end side surfaces of the light emitting element 300 may be partially exposed. During the manufacturing process of the display device 10, in the process of forming the second insulating layer 520 covering the outer surface of the light emitting element 300, the insulating layer 380 (see FIG. 1 ) surrounding the outer surface of the semiconductor layer of the light emitting element 300 is formed. Figure 4 ) may be partially removed, and the exposed side surface of the light emitting element 300 may contact the first contact electrode 261 and the second contact electrode 262. One end portion of the light emitting element 300 may be electrically connected to the first electrode 210 through the first contact electrode 261, and the other end portion thereof may be electrically connected to the second electrode 220 through the second contact electrode 262.

[0136] In the drawings, one first contact electrode 261 and one second contact electrode 262 are provided in one subpixel PXn, but the present invention is not limited thereto. The number of the first contact electrode 261 and the second contact electrode 262 may vary according to the number of the first electrode 210 and the second electrode 220 provided in each subpixel PXn.

[0137] In addition, if Figure 3 , the first contact electrode 261 is disposed on the first electrode 210 and the second insulating layer 520. The first contact electrode 261 may contact one end portion of the light emitting element 300 and the exposed upper surface of the first electrode 210. One end portion of the light emitting element 300 may be electrically connected to the first electrode 210 through the first contact electrode 261.

[0138] The third insulating layer 530 is disposed on the first contact electrode 261. The third insulating layer 530 may electrically insulate the first contact electrode 261 and the second contact electrode 262 from each other. Specifically, the third insulating layer 530 may be disposed to cover the first contact electrode 261, and may not be disposed on the other end portion of the light emitting element 300, so that the light emitting element 300 may contact the second contact electrode 262. The third insulating layer 530 may partially contact the first contact electrode 261 and the second insulating layer 520 at the upper surface of the second insulating layer 520. The side surface of the third insulating layer 530 in the direction in which the second electrode 220 is disposed may be aligned with one side surface of the second insulating layer 520. In addition, the third insulating layer 530 may be disposed in the non-light emitting area NEA, for example, on the first insulating layer 510 disposed on the first planarization layer 109. However, the present invention is not limited thereto.

[0139] The second contact electrode 262 is disposed on the second electrode 220, the second insulating layer 520, and the third insulating layer 530. The second contact electrode 262 may contact the other end portion of the light emitting element 300 and the exposed upper surface of the second electrode 220. The other end portion of the light emitting element 300 may be electrically connected to the second electrode 220 through the second contact electrode 262.

[0140] That is, the first contact electrode 261 is provided between the first electrode 210 and the third insulating layer 530, and the second contact electrode 262 may be provided on the third insulating layer 530. The second contact electrode 262 may partially contact the second insulating layer 520, the third insulating layer 530, the second electrode 220, and the light emitting element 300. One end portion of the second contact electrode 262 in the direction in which the first electrode 210 is provided may be provided on the third insulating layer 530. The first contact electrode 261 and the second contact electrode 262 may not contact each other due to the second insulating layer 520 and the third insulating layer 530. However, the present invention is not limited thereto, and in some cases, the third insulating layer 530 may be omitted.

[0141] The contact electrode 260 may include a conductive material. For example, the contact electrode 260 may include ITO, IZO, ITZO, aluminum (Al), etc. As an example, the contact electrode 260 may include a transparent conductive material, and the light emitted from the light emitting element 300 may pass through the contact electrode 260 and travel toward the electrodes 210 and 220. Each of the electrodes 210 and 220 may include a material having a high reflectivity, and the electrodes 210 and 220 disposed on the inclined side surfaces of the inner blocks 410 and 420 may reflect the incident light in an upward direction relative to the first substrate 101. However, the present invention is not limited thereto.

[0142] The fourth insulating layer 550 may be entirely disposed on the first substrate 101. The fourth insulating layer 550 may serve to protect members disposed on the first substrate 101 from external environments.

[0143] Each of the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 described above may include an inorganic insulating material or an organic insulating material. In an exemplary embodiment, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 may each include an inorganic insulating material, such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3), aluminum nitride (AlN), etc. Alternatively, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 may each include an organic insulating material, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, PI resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene resin, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, or polymethyl methacrylate-polycarbonate synthetic resin. However, the present invention is not limited thereto.

[0144] Meanwhile, the light emitting element 300 may be a light emitting diode, and specifically, may be an inorganic light emitting diode having a size in micrometer units or nanometer units and made of an inorganic material. By forming an electric field in a specific direction between two electrodes facing each other, the inorganic light emitting diode may be aligned between the two electrodes in which polarity is formed. The light emitting element 300 may be aligned between the electrodes due to the electric field formed on the two electrodes.

[0145] The light emitting element 300 according to an embodiment may have a shape extending in one direction. The light emitting element 300 may have the shape of a rod, a wire, a tube, etc. In an exemplary embodiment, the light emitting element 300 may have a cylindrical shape or a rod shape. However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may have the shape of a cube, a cuboid, a polygonal column (e.g., a hexagonal column), etc., or a shape extending in one direction and having a partially inclined outer surface. Therefore, the light emitting element 300 may have various shapes. A plurality of semiconductors included in the light emitting element 300, which will be described below, may have a structure in which semiconductors are sequentially arranged or stacked in one direction.

[0146] The light emitting element 300 may include a semiconductor core and an insulating layer surrounding the semiconductor core. The semiconductor core of the light emitting element 300 may include a semiconductor layer doped with impurities of any conductive type (e.g., p-type or n-type). The semiconductor layer may receive an electrical signal applied by an external power source and emit light of a specific wavelength range.

[0147] Figure 4 is a schematic diagram of a light emitting element according to an embodiment.

[0148] refer to Figure 4 The light emitting element 300 may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330, an electrode layer 370 and an insulating layer 380. The light emitting element 300 may include a semiconductor core including the first semiconductor layer 310, the second semiconductor layer 320 and the active layer 330 and an insulating layer 380 surrounding the outer surface of the semiconductor core.

[0149] The first semiconductor layer 310 may be a semiconductor doped to have a first polarity and may be an n-type semiconductor. As an example, when the light emitting element 300 emits light in a blue wavelength range, the first semiconductor layer 310 may include Al x Ga y In 1-x-y N (0<=x<=1, 0<=y<=1 and 0<=x+y<=1). For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with n-type impurities. The first semiconductor layer 310 may be doped with an n-type dopant. As an example, the n-type dopant may be Si, Ge, Sn, etc. In an exemplary embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be 1.5 μm to 5 μm, but the present invention is not limited thereto.

[0150] The second semiconductor layer 320 is disposed on the active layer 330 to be described below. For example, the second semiconductor layer 320 may be a semiconductor doped to have a second polarity different from the first polarity and may be a p-type semiconductor. As an example, when the light emitting element 300 emits light in a blue or green wavelength range, the second semiconductor layer 320 may include Al x Ga y In 1-x-y N (0<=x<=1, 0<=y<=1 and 0<=x+y<=1). For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with p-type impurities. The second semiconductor layer 320 may be doped with a p-type dopant. As an example, the p-type dopant may be Mg, Zn, Ca, Se, Ba, etc. In an exemplary embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 may be 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0151] Meanwhile, each of the first semiconductor layer 310 and the second semiconductor layer 320 is illustrated in the drawings as being formed as one layer, but the present invention is not limited thereto. According to some embodiments, each of the first semiconductor layer 310 and the second semiconductor layer 320 may further include a larger number of layers, for example, a cladding layer or a tensile strain barrier reduction (TSBR) layer, according to the material of the active layer 330. A description thereof will be provided below with reference to other drawings.

[0152] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may include a material having a single quantum well structure or a multi-quantum well structure. When the active layer 330 includes a material having a multi-quantum well structure, the active layer 330 may have a structure in which quantum layers and well layers are alternately stacked. The active layer 330 may emit light due to the recombination of hole-electron pairs in response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320. As an example, when the active layer 330 emits light in a blue wavelength range, the active layer 330 may include materials such as AlGaN, AlGaInN, etc. Specifically, when the active layer 330 has a multi-quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layer may include a material such as AlGaN or AlGaInN, and the well layer may include a material such as GaN or AlInN. In an exemplary embodiment, the active layer 330 includes AlGaInN as a quantum layer and AlInN as a well layer. As described above, the active layer 330 may emit blue light having a central wavelength band of 450 nm to 495 nm.

[0153] However, the present invention is not limited thereto, and the active layer 330 may have a structure in which a semiconductor material having a large band gap energy and a semiconductor material having a small band gap energy are alternately stacked, or contain other group III or group V semiconductor materials according to the wavelength range of the emitted light. The light emitted by the active layer 330 is not limited to light in the blue wavelength range, and in some cases, the active layer 330 may also emit light in the red or green wavelength range. The length of the active layer 330 may be 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0154] Meanwhile, light emitted from the active layer 330 may be emitted not only to the outer surface of the light emitting element 300 in the length direction but also to both side surfaces of the light emitting element 300. Directivity of light emitted from the active layer 330 is not limited to one direction.

[0155] The electrode layer 370 may be an ohmic contact electrode. However, the present invention is not limited thereto, and the electrode layer 370 may also be a Schottky contact electrode. The light emitting element 300 may include at least one electrode layer 370. Although the light emitting element 300 is Figure 4 370, but the present invention is not limited thereto. In some cases, the light emitting element 300 may include a larger number of electrode layers 370, or the electrode layer 370 may be omitted. Even when the number of electrode layers 370 varies or further includes other structures, the description of the light emitting element 300 provided below may also be equally applicable.

[0156] When the light emitting element 300 is electrically coupled to the electrodes 210 and 220 or the contact electrode 260, the electrode layer 370 can reduce the resistance between the light emitting element 300 and the electrode or the contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layer 370 may include a semiconductor material doped with n-type or p-type impurities. The electrode layer 370 may include the same material or different materials, but the present invention is not limited thereto.

[0157] The insulating layer 380 is provided to surround the outer surfaces of the plurality of semiconductor layers and electrode layers described above. In an exemplary embodiment, the insulating layer 380 may be provided to surround at least the outer surface of the active layer 330, and may extend in one direction in which the light emitting element 300 extends. The insulating layer 380 may be used to protect the member. As an example, the insulating layer 380 may be formed to surround the side surface portion of the member and expose both end portions of the light emitting element 300 in the length direction.

[0158] In the drawings, the insulating layer 380 is illustrated as being formed to extend in the length direction of the light emitting element 300 to cover the side surface from the first semiconductor layer 310 to the electrode layer 370, but the present invention is not limited thereto. Since the insulating layer 380 covers only the outer surfaces of some semiconductor layers (including the active layer 330) or only covers a portion of the outer surface of the electrode layer 370, the outer surface of the electrode layer 370 may be partially exposed. In addition, the upper surface of the insulating layer 380 may be formed to be circular in cross section in a region adjacent to at least one end portion of the light emitting element 300.

[0159] The thickness of the insulating layer 380 may be 10 nm to 1.0 μm, but the present invention is not limited thereto. Preferably, the thickness of the insulating layer 380 may be about 40 nm.

[0160] The length h of the light emitting element 300 may be 1 μm to 10 μm or 2 μm to 6 μm, and preferably 3 μm to 5 μm. In addition, the diameter of the light emitting element 300 may be 300 nm to 700 nm, and the aspect ratio of the light emitting element 300 may be 1.2 to 100. However, the present invention is not limited thereto, and the plurality of light emitting elements 300 included in the display device 10 may have different diameters according to the composition difference of the active layer 330. Preferably, the diameter of the light emitting element 300 may be about 500 nm.

[0161] Meanwhile, as described above, in the light emitting element 300 according to one embodiment, the insulating layer 380 may include an insulating film 381 and an element dispersant 385. The element dispersant 385 may be bonded to the outer surface of the insulating film 381 and may include a magnetic metal. The light emitting elements 300 may each include an element dispersant 385 including a magnetic metal to receive a magnetic force directed in a specific direction and maintain a dispersed state in the ink for a long time.

[0162] Specifically, the insulating film 381 may be formed to surround the outer surfaces of the plurality of semiconductor layers of the light emitting element 300. For example, the insulating film 381 may be formed to surround at least the outer surface of the active layer 330, and may extend in one direction in which the light emitting element 300 extends, for example, in a direction in which the first semiconductor layer 310, the active layer 330, and the second semiconductor layer 320 are stacked. As described above, the insulating film 381 may be formed to surround the outer surfaces of the first semiconductor layer 310, the second semiconductor layer 320, and the electrode layer 370 (including the active layer 330).

[0163] The insulating film 381 may include at least one selected from materials having insulating properties, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN), aluminum oxide (A 2 O 3 ) etc. Therefore, it is possible to prevent an electrical short circuit that may occur when the active layer 330 directly contacts an electrode through which an electrical signal is transmitted to the light emitting element 300. In addition, since the insulating film 381 protects the outer surface of the light emitting element 300 (including the active layer 330), it is possible to prevent the light emitting efficiency from being deteriorated.

[0164] The element dispersant 385 may include a magnetic metal. According to one embodiment, the element dispersant 385 may include a ligand 385p that forms a coordination bond with the magnetic metal, and a first functional group 385a that bonds with the ligand 385p to form a chemical bond with the insulating film 381. In addition, the element dispersant 385 may include a second functional group 385b that is bonded to the ligand 385p and is different from the first functional group 385a.

[0165] Figure 5 yes Figure 4 An enlarged schematic diagram of part A. Figure 5 By zooming in Figure 4 The insulating film 381 and the element dispersant 385 are schematically illustrated on the outer surface of the insulating layer 380.

[0166] Combination Figure 4 refer to Figure 5, ligand 385p of element dispersant 385 ( Figure 5 The "P" in the ink) can form a coordination bond with a magnetic metal (not shown). The magnetic metal can form a coordination bond with the ligand 385p. As will be described below, when a magnetic field is applied to the light-emitting element 300, a magnetic force can be applied to the magnetic metal in one direction due to the magnetic field. The light-emitting element 300 can receive the magnetic force received by the magnetic metal, and because the precipitation rate of the light-emitting element in the ink is reduced, the dispersed state can be maintained for a long time. In some embodiments, during the manufacturing process of the display device 10, the light-emitting element 300 can be uniformly dispersed in a state where a magnetic field is applied thereto, and ejected by an inkjet printing process.

[0167] The types of ligand 385p and magnetic metal are not particularly limited. For example, ligand 385p is not particularly limited as long as it has a structure capable of fixing the magnetic metal by forming a coordination bond with the magnetic metal as the central metal. In an exemplary embodiment, ligand 385p may be a porphyrin structure, a multidentate structure, etc., and the magnetic metal may be Fe, Mn, Co, Ni, Cr, etc., but the present invention is not limited thereto.

[0168] The first functional group 385a of the element dispersant 385 ( Figure 5 The "X" in the figure may be bonded to the ligand 385p to form a chemical bond with the outer surface of the insulating film 381. For example, the first functional group 385a may form a covalent bond with the material forming the insulating film 381, and the ligand 385p forming a coordination bond with the magnetic metal may be bonded to the insulating film 381 through the first functional group 385a.

[0169] The first functional group 385a may include a bonding portion that forms a chemical bond with the insulating film 381, and a connecting portion connected to the bonding portion that is bonded to the ligand 385p. In an exemplary embodiment, the insulating film 381 may include a bonding portion such as aluminum oxide (Al2O3) as described above. 2 O 3 ) or silicon oxide (SiO x ) material, and the bonding portion of the first functional group 385a may be any one of the following functional groups: for example, a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group, and a phosphoric acid group. However, the present invention is not limited thereto.

[0170] In addition, the first functional group 385a may include an alkenyl group, an alkynyl group, etc. having 1 to 6 carbon atoms as a connecting portion. That is, the first functional group 385a may include a carbon chain having a single bond. The carbon chain having a single bond may be able to perform single bond rotation, and the ligand 385p and the magnetic metal bonded to the insulating film 381 by the first functional group 385a may be oriented in a random direction. However, when a magnetic field is formed in the ink in which the light-emitting element 300 is dispersed, the magnetic force generated by the magnetic field may be applied to the magnetic metal in one direction, the connecting portion of the first functional group 385a rotates, and the element dispersant 385 may be oriented in the same direction.

[0171] The element dispersant 385 may further include at least one second functional group 385b ( Figure 5 385a). The second functional group 385b may be a functional group different from the first functional group 385a. As described above, the light-emitting element 300 may be prepared in a state dispersed in the ink, and the outer surface of each light-emitting element 300 may be surface-treated so that the light-emitting element 300 does not aggregate with other light-emitting elements 300. According to one embodiment, in the insulating layer 380 of the light-emitting element 300, the element dispersant 385 may further include a second functional group 385b including a hydrophobic functional group, and a plurality of light-emitting elements 300 may be dispersed in the ink without agglomerating with each other. In some embodiments, the second functional group 385b may be an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, etc., but the present invention is not limited thereto.

[0172] In an exemplary embodiment, the element dispersant 385 of the light emitting element 300 may have a structure represented by any one of the following Chemical Formulas A to D.

[0173] [Chemical formula A]

[0174]

[0175] [Chemical formula B]

[0176]

[0177] [Chemical formula C]

[0178]

[0179] [Chemical formula D]

[0180]

[0181] In Formulas A to D, M is Fe 2+ , Mn2+ 、Co 2+ 、Ni 2+ and Cr 2+ At least one of R 1 is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group and a phosphoric acid group, R 2 To R 4 Each is independently one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms, n is an integer of 1 to 6, and the dotted line indicates a coordinate bond.

[0182] The element dispersant 385 may have a structure represented by one of the above-described chemical formulas A to D. In the chemical formulas A to D, M may be a magnetic metal, R 1 may be a bonding portion of the first functional group 385a, and R 2 To R 4 It may be the second functional group 385b.

[0183] As described above, the element dispersant 385 may include a ligand 385p that forms a coordination bond with a magnetic metal as a central metal. As an example, the ligand 385p of the element dispersant 385 may be a porphyrin structure or a multidentate structure. Chemical formula A is a case where the ligand 385p is a porphyrin structure, and at least some of the four nitrogen atoms (N) of the porphyrin structure can form a coordination bond with a magnetic metal (M). In addition, chemical formulas B to D are cases where the ligand 385p is a multidentate structure, and at least some of the oxygen atoms (O) or nitrogen atoms (N) of the tooth structure can form a coordination bond with a magnetic metal. The magnetic metal can form a coordination bond with the ligand 385p in the form of a charged ion.

[0184] In addition, the first functional group 385a may include R corresponding to the bonding portion. 1 and -C corresponding to the connecting part n H 2n . R 1 A chemical bond, for example, a covalent bond, may be formed with the insulating film 381 of the insulating layer 380, and the carbon chain (—C n H 2n ) may be bonded to the porphyrin structure or the tooth structure. 2 To R 4 May include hydrophobic functional groups as described above. However, when R 2 To R 4 When each is independently hydrogen, the element dispersant 385 may have a structure not including the second functional group 385 b .

[0185] The magnetic metal (M) can be fixed to the ligand 385p by forming a coordination bond therewith. When the light-emitting element 300 including the element dispersant 385 is placed in a magnetic field pointing in one direction, the magnetic metal (M) can receive a magnetic force according to the direction of the magnetic field. For example, the light-emitting element 300 can receive a magnetic force pointing in a direction opposite to the direction of gravity according to the direction of the magnetic field, and the precipitation rate of the light-emitting element 300 in the ink in which the magnetic field is formed can be reduced.

[0186] Figure 6 is a schematic diagram illustrating a case in which a magnetic field is applied to a light emitting element according to an embodiment. Figure 7 yes Figure 6 An enlarged schematic diagram of part B.

[0187] refer to Figure 6 and Figure 7 Described in detail, the light emitting elements 300 according to one embodiment each include an insulating layer 380 and an element dispersant 385 , and thus may be prepared in a state of being dispersed in the ink S during the manufacturing process of the display device 10 .

[0188] Ink S may be an organic solvent capable of storing the light emitting element 300 in a dispersed state without reacting with the light emitting element 300. In addition, ink S may be a material that evaporates or volatilizes by heating. As will be described below, after the light emitting element 300 is aligned between the electrodes 210 and 220 during the manufacturing process of the display device 10, the ink S may be volatilized and removed by a heating treatment process. In other words, ink S may have a viscosity sufficient to smoothly disperse the light emitting element 300, and may have a boiling point and viscosity that may be easily volatilized by heating. For example, ink S may be propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol (PG), acetone, ethanol, toluene, etc. However, the present invention is not limited thereto.

[0189] As described above, the light emitting element 300 includes a semiconductor layer or a semiconductor core having a high specific gravity. Figure 7 As shown in FIG. 1 , the light emitting elements 300 dispersed in the ink S can receive the gravity F 1 , and may settle to the lower surface of the container in which the ink S is prepared. When the light emitting elements 300 are settled in the ink S, the number of light emitting elements 300 included in the ink S may be uneven during ejection of the ink S during the manufacturing process of the display device 10 .

[0190] However, the light emitting element 300 according to one embodiment may include an element dispersant 385 including a magnetic metal (M), and when placed in a magnetic field directed in one direction, may receive a magnetic force directed in one direction. Figure 7 As shown in FIG. 1 , when a magnetic field B is formed in the ink S in the direction opposite to the direction of gravity,0 When the magnetic force is 0 The magnetic metal in the element dispersant 385 included in the light emitting element 300 is applied in a direction parallel to the direction of the magnetic field B. As in the chemical formula A to the chemical formula D, the magnetic metal can form a coordination bond with the ligand 385p in the form of a charged ion. 0 A magnetic force in the direction of attraction or repulsion can be applied to a magnetic metal having an electric charge.

[0191] The magnetic force of the magnetic metal applied to the element dispersant 385 can be transferred to the light emitting element 300 ( Figure 6 F 2 ), and in some embodiments, wherein a magnetic field B is formed 0 The direction of the magnetic field B can be opposite to the direction of gravity. 0 The light emitting element 300 can receive a magnetic force F pointing in the direction opposite to the gravity direction. 2 Therefore, the light emitting element 300 according to an embodiment can maintain a dispersed state for a long time because the precipitation rate of the light emitting element 300 in the ink S is reduced, and during the manufacturing process of the display device 10, the light emitting element 300 can be ejected by the inkjet printing process in a uniformly dispersed state.

[0192] Meanwhile, although not shown in the drawings, a magnetic field B is applied to the light emitting element 300. 0 The method is not particularly limited. For example, the magnetic field B may be formed by a coil surrounding a container in which the light emitting element 300 is prepared and the ink S is dispersed therein. 0 , and in some cases, a predetermined magnetic field B may be applied from a device prepared outside the container 0 .

[0193] Hereinafter, a method of manufacturing the display device 10 according to an embodiment will be described with reference to other drawings.

[0194] Figure 8 is a flowchart illustrating a method of manufacturing a display device according to an embodiment.

[0195] refer to Figure 8 According to one embodiment, a method for manufacturing a display device 10 may include preparing ink S in which light-emitting elements 300 are dispersed and applying a magnetic field to the light-emitting elements 300 (S1), preparing a target substrate SUB on which a first electrode 210 and a second electrode 220 spaced apart from each other are formed, and ejecting the ink S onto the target substrate SUB (S2), and generating an electric field on the target substrate SUB to place the light-emitting element 300 between the first electrode 210 and the second electrode 220 (S3).

[0196] A magnetic field may be applied to the light emitting element 300 prepared in a state of being dispersed in the ink S. As described above, when a magnetic field is applied, the magnetic force received by the magnetic metal included in the element dispersant 385 may be transferred to the light emitting element 300, so that the precipitation rate of the light emitting element 300 may be reduced. The light emitting element 300 may be kept in a uniformly dispersed state before being ejected onto a target substrate SUB disposed between the first electrode 210 and the second electrode 220 through an inkjet printing process. Hereinafter, a method for manufacturing the display device 10 will be described in detail with further reference to other drawings.

[0197] First, as mentioned above Figure 6 and Figure 7 In the present invention, an ink S in which light-emitting elements 300 are dispersed is prepared, each of the light-emitting elements 300 includes a semiconductor core and an insulating layer 380, and a magnetic field (S1) is applied to the light-emitting elements 300. Due to the magnetic field, a magnetic force may be applied to the magnetic metal included in the element dispersant 385, and the magnetic force may be transferred to the light-emitting elements 300. According to one embodiment, during the manufacturing process of the display device 10, in applying the magnetic field (S1), a magnetic force may be applied to the light-emitting elements 300 in a direction opposite to the direction of gravity.

[0198] As will be described below, during the process of ejecting the ink S in which the light emitting elements 300 are dispersed, a magnetic field is applied to the light emitting elements 300 in one direction so that the light emitting elements 300 can maintain a uniformly dispersed state in the ink S. The magnetic field may be applied so that the magnetic force transmitted to the light emitting elements 300 points in a direction opposite to the direction of gravity. Figure 6 As shown, the magnetic force F 2 can be in the same 1 The opposite direction is transferred to the light emitting element 300, and the precipitation rate of the light emitting element 300 in the ink S may be reduced.

[0199] Fig. 9 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0200] Then, refer to Fig. 9 , a target substrate SUB on which a first electrode 210 and a second electrode 220 are disposed is prepared. Although for ease of description, Fig. 9 , only the target substrate SUB, the first electrode 210 and the second electrode 220 are illustrated, but in the display device 10, multiple conductive layers and multiple insulating layers disposed under the first electrode 210 and the second electrode 220 may be further disposed as described above. That is, Fig. 9 The target substrate SUB may be understood to include Figure 3The invention relates to a first substrate 101 and includes a plurality of conductive layers and a plurality of insulating layers provided on the first substrate 101. Since the description thereof is the same as that described above, the detailed description thereof will be omitted.

[0201] Fig.10 and Fig.11 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0202] Then, refer to Fig.10 , the ink S in which the light emitting elements 300 are dispersed is ejected onto the first substrate 101 (S2). In an exemplary embodiment, the ink S may be ejected onto the first substrate 101 through an inkjet printing process via an inkjet printing device (not shown). The ink S in which the light emitting elements 300 are dispersed may be prepared in the inkjet printing device, and as described above, a magnetic field directed in one direction may be formed in the ink S.

[0203] According to one embodiment, a magnetic field B may be applied therein 0 The ink S is ejected onto the first substrate 101 in a state of being uniformly dispersed. As described above, the display device 10 includes a plurality of pixels PX and a plurality of sub-pixels PXn, and during the inkjet printing process, the ink S in which the light-emitting elements 300 are dispersed may be ejected in each sub-pixel PXn. The inkjet printing process may be performed in a state in which a magnetic field is applied to the light-emitting elements 300, so that the light-emitting elements 300 may maintain a uniformly dispersed state during the process of ejecting the ink S. Therefore, a uniform number of light-emitting elements 300 may be dispersed in the ink S ejected in each pixel PX or sub-pixel PXn.

[0204] refer to Fig.11 , when the ink S' is ejected in a state in which a magnetic field is not applied to the light emitting elements 300, some of the light emitting elements 300 may be deposited on the lower surface of the container in which the ink S' is prepared. In this case, in the inkjet printing process, the ink S' ejected onto some sub-pixels PXn may include a smaller number of light emitting elements 300 than the ink S' ejected onto other sub-pixels PXn.

[0205] The method of manufacturing the display device 10 according to an embodiment may perform the ejection of the ink S in a state where a magnetic field is applied to the light emitting element 300, and the ink S ejected in each sub-pixel PXn may include a uniform number of light emitting elements 300. Therefore, in the display device 10, a uniform number of light emitting elements 300 may be provided in each of a plurality of pixels PX or sub-pixels PXn.

[0206] Fig.12 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment. Fig.13 This is an example of Fig.12 Schematic diagram of the situation in which the light emitting element is aligned during operation.

[0207] Then, refer to Fig.12 and Fig.13 , an electric field is generated on the target substrate SUB to place the light emitting element 300 between the first electrode 210 and the second electrode 220 (S3). When the alignment signal is applied to the first electrode 210 and the second electrode 220, an electric field E may be generated on the target substrate SUB. In an exemplary embodiment, the alignment signal may be an alternating current (AC) voltage, and the AC voltage may have a voltage of + / -10 to 50 V and a frequency of 10 kHz to 1 MHz.

[0208] When AC voltage is applied to the first electrode 210 and the second electrode 220, an electric field E is generated therebetween, and the electric field E may be applied to the light emitting element 300 dispersed in the ink S. The light emitting element 300 to which the electric field E is applied may receive a dielectrophoretic force FE in the ink S (see Fig.13 ), and the light emitting element 300 receiving the dielectrophoretic force can be placed between the first electrode 210 and the second electrode 220, while changing the orientation direction and position of each light emitting element 300.

[0209] According to one embodiment, in placing the light emitting elements 300, one end portion of each of the light emitting elements 300 may be disposed on the first electrode 210 and the other end portion thereof may be disposed on the second electrode 220 by the electric field E. Fig.13 As shown in FIG. 1 , the two end portions of each light emitting element 300 can be respectively ejected from the initial ejection position ( Fig.13 The dotted line portion of the light emitting element 300 moves toward the electrodes 210 and 220, and each light emitting element 300 may be oriented so that its extension direction points to one direction. Although both end portions of each light emitting element 300 may be disposed on the electrodes 210 and 220, respectively, the present invention is not limited thereto, and the light emitting element 300 may be disposed between the electrodes 210 and 220.

[0210] Fig.14 is a cross-sectional view illustrating one operation of a manufacturing process of a display device according to an embodiment.

[0211] Then, referring to 14, the ink S ejected onto the target substrate SUB is removed. The removal of the ink S may be performed by a heat treatment device, and the heat treatment device may radiate heat or infrared light onto the target substrate SUB. When the ink S ejected onto the target substrate SUB is removed, the light emitting element 300 may be prevented from moving and placed between the electrodes 210 and 220.

[0212] The display device 10 according to an embodiment can be manufactured by the above process. The manufacturing process of the display device 10 includes applying a magnetic field to the light-emitting elements 300 each including the element dispersant 385. When the magnetic field is applied to the light-emitting element 300, the magnetic force can be applied to the magnetic metal of the element dispersant 385, and the magnetic force can be transmitted to the light-emitting element 300. The light-emitting element 300 can maintain a dispersed state in the ink S in which the magnetic field is formed, and the ink S ejected during the inkjet printing process can include a uniform number of light-emitting elements 300. Therefore, in the display device 10, each sub-pixel PXn can include a uniform number of light-emitting elements 300.

[0213] Hereinafter, various embodiments of a light emitting element 300 and a display device 10 according to an embodiment will be described.

[0214] Meanwhile, the structure of the light emitting element 300 is not limited to Figure 4 The structure shown in FIG. 1 and may have other structures.

[0215] Fig.15 is a schematic diagram of a light emitting element according to another embodiment.

[0216] refer to Fig.15 , the light emitting element 300' according to one embodiment may have a shape extending in one direction and having a partially inclined side surface. That is, the light emitting element 300' according to one embodiment may have a partially tapered shape. Fig.15 The light emitting element 300' and Figure 4 The light emitting element 300 is the same as that of FIG. 1 , but the shape of the layer is partially different. Hereinafter, the same description will be omitted, and the difference will be described.

[0217] The light emitting element 300' may be formed such that a plurality of layers are not stacked in one direction and each of the plurality of layers surrounds an outer surface of another layer. Fig.15 The light emitting element 300' is a light emitting element 300', so that a plurality of semiconductor layers surround at least a portion of the outer surface of another layer. The light emitting element 300' may include a semiconductor core whose at least a portion of the region partially extends in one direction and an insulating layer 380' formed to surround the semiconductor core. The semiconductor core may include a first semiconductor layer 310', an active layer 330', a second semiconductor layer 320', and an electrode layer 370'.

[0218] According to one embodiment, the first semiconductor layer 310 ′ may extend in one direction, and both end portions thereof may be formed to be inclined toward a center portion thereof. Fig.15The first semiconductor layer 310' may have a shape in which a rod-shaped or cylindrical body portion and end portions having inclined side surfaces at upper and lower portions of the body portion are formed. The upper end portion of the body portion may have a steeper slope than the lower end portion thereof.

[0219] The active layer 330' is disposed to surround the outer surface of the main body portion of the first semiconductor layer 310'. The active layer 330' may have a ring shape extending in one direction. The active layer 330' may not be formed on the upper end portion and the lower end portion of the first semiconductor layer 310'. The active layer 330' may be formed only on the non-inclined side surface of the first semiconductor layer 310'. However, the present invention is not limited thereto. Therefore, the light emitted by the active layer 330' may be emitted not only to the two end portions of the light emitting element 300' in the length direction, but also to its two side surfaces based on the length direction. When compared with Figure 4 When compared with the light emitting element 300, Fig.15 The light emitting element 300' may include an active layer 330' having a larger area, thereby emitting a larger amount of light.

[0220] The second semiconductor layer 320' is disposed to surround the outer surface of the active layer 330' and the upper end portion of the first semiconductor layer 310'. The second semiconductor layer 320' may include an annular main body portion extending in one direction and an upper end portion having a side surface formed to be inclined. That is, the second semiconductor layer 320' may directly contact the parallel side surfaces of the active layer 330' and the inclined upper end portion of the first semiconductor layer 310'. However, the second semiconductor layer 320' is not formed in the lower end portion of the first semiconductor layer 310'.

[0221] The electrode layer 370' is disposed to surround the outer surface of the second semiconductor layer 320'. That is, the shape of the electrode layer 370' may be substantially the same as the shape of the second semiconductor layer 320'. That is, the electrode layer 370' may fully contact the outer surface of the second semiconductor layer 320'.

[0222] The insulating layer 380' may be disposed around outer surfaces of the electrode layer 370' and the first semiconductor layer 310'. The insulating layer 380' may directly contact the electrode layer 370', lower end portions of the first semiconductor layer 310', and exposed lower end portions of the active layer 330' and the second semiconductor layer 320'.

[0223] Even in Fig.15 In the case of the light emitting element 300', the insulating layer 380' may also include an insulating film 381' and an element dispersant 385'. The description thereof is the same as that described above.

[0224] Meanwhile, the display device 10 according to an embodiment may include a display device having Figure 2 and Figure 3 The electrodes 210 and 220 have different shapes.

[0225] Fig.16 is a plan view illustrating one pixel of a display device according to another embodiment.

[0226] refer to Fig.16 , in the display device 10_1 according to an embodiment, each of the first electrode 210_1 and the second electrode 220_1 may further include a portion extending in the first direction DR1. Fig.16 The display device 10_1 and Figure 2 The display device 10 of FIG. 1 is different in that the shapes of the first electrode 210_1 and the second electrode 220_1 are different. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on differences from the above.

[0227] exist Fig.16 In the display device 10_1 , the first electrode 210_1 and the second electrode 220_1 may respectively include electrode stem portions 210S_1 and 220S_1 extending in the first direction DR1 and one or more electrode branch portions 210B_1 and 220B_1 respectively branching from the electrode stem portions 210S_1 and 220S_1 in the second direction DR2 .

[0228] Specifically, the first electrode 210_1 may include a first electrode stem portion 210S_1 disposed to extend in the first direction DR1 and one or more first electrode branch portions 210B_1 branched from the first electrode stem portion 210S_1 to extend in the second direction DR2.

[0229] Both ends of the first electrode stem portion 210S_1 of any one pixel may be spaced apart from each other, terminate between sub-pixels PXn, and be placed on substantially the same straight line as the first electrode stem portion 210S_1 of adjacent sub-pixels PXn (e.g., adjacent in the first direction DR1) of the same row. Since both ends of each first electrode stem portion 210S_1 disposed in each sub-pixel PXn are spaced apart from each other, an electrical signal may be independently transmitted to each first electrode branch portion 210B_1.

[0230] The first electrode branch portion 210B_1 branches from at least a portion of the first electrode stem portion 210S_1 and is disposed to extend in the second direction DR2. However, the first electrode branch portion 210B_1 may terminate in a state of being spaced apart from the second electrode stem portion 220S_1 disposed to face the first electrode stem portion 210S_1.

[0231] The second electrode 220_1 may include a second electrode stem portion 220S_1 disposed to extend in the first direction DR1 and one or more second electrode branch portions 220B_1 branched from the second electrode stem portion 220S_1 to extend in the second direction DR2. The second electrode stem portion 220S_1 may be disposed to be spaced apart from and face the first electrode stem portion 210S_1, and the second electrode branch portion 220B_1 may be disposed to be spaced apart from and face one or more first electrode branch portions 210B_1.

[0232] Unlike the first electrode stem portion 210S_1, the second electrode stem portion 220S_1 may be disposed to extend in the first direction DR1 to traverse each sub-pixel PXn. The second electrode stem portion 220S_1 traversing each sub-pixel PXn may be connected to a peripheral portion of the display area DPA in which each pixel PX or sub-pixel PXn is disposed, or to a portion extending in one direction from the non-display area NDA.

[0233] The second electrode branch portion 220B_1 may branch from the second electrode trunk portion 220S_1 in the second direction DR2 and terminate in a state of being spaced apart from the first electrode trunk portion 210S. Since the second electrode branch portion 220B_1 is disposed to be spaced apart from and face the first electrode branch portion 210B_1, a region in which the light emitting element 300 is disposed may be formed between the second electrode branch portion 220B_1 and the first electrode branch portion 210B_1.

[0234] In the drawings, two first electrode branch portions 210B_1 and one second electrode branch portion 220B_1 are illustrated as being disposed in one subpixel PXn, and the first electrode 210_1 is disposed in a shape surrounding the outer surface of the second electrode branch portion 220B_1. However, the present invention is not limited thereto. In the display device 10_1, a greater or smaller number of electrode branch portions 210B_1 and 220B_1 may be disposed in each subpixel PXn. In this case, the first electrode branch portion 210B_1 and the second electrode branch portion 220B_1 may be alternately disposed to be spaced apart from each other.

[0235] The light emitting element 300 may be disposed between the first electrode branch portion 210B_1 and the second electrode branch portion 220B_1, and the first contact electrode 261 and the second contact electrode 262 may be disposed on the first electrode branch portion 210B_1 and the second electrode branch portion 220B_1, respectively. Fig.16The display device 10_1 includes a larger number of electrodes 210_1 and 220_1 or electrode branch portions 210B_1 and 220B_1 in one sub-pixel PXn, and thus a larger number of light emitting elements 300 can be provided. In addition, the description of other components is the same as that of the above reference Figure 2 and Figure 3 Those described are the same, and thus a detailed description thereof will be omitted.

[0236] Fig.17 is a plan view illustrating one pixel of a display device according to still another embodiment.

[0237] refer to Fig.17 According to an embodiment, a display device 10_2 may include a first electrode 210_2 and a second electrode 220_2, at least a portion of which has a curved shape, and the curved region of the first electrode 210_2 may be spaced apart from and face the curved region of the second electrode 220_2. Fig.17 The display device 10_2 and Figure 2 The display device 10 of FIG. 1 is different in that the shapes of the first electrode 210_2 and the second electrode 220_2 are different. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on differences from the above.

[0238] Fig.17 The first electrode 210_2 of the display device 10_2 in the embodiment may include a plurality of holes HOL. As an example, as shown in the drawings, the first electrode 210_2 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction DR2. However, the present invention is not limited thereto, and the first electrode 210_2 may include a larger or smaller number of holes HOL, or only one hole HOL. Hereinafter, an example in which the first electrode 210_2 includes the first hole HOL1, the second hole HOL2, and the third hole HOL3 will be described.

[0239] In an exemplary embodiment, the first hole HOL1, the second hole HOL2, and the third hole HOL3 may each have a circular planar shape. Therefore, the first electrode 210_2 may include a curved area formed by each hole HOL and may face the second electrode 220_2 at the curved area. However, the above description is exemplary, and the present invention is not limited thereto. The shape of each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited as long as the shape can provide a space in which the second electrode 220_2 is set as described below. For example, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a planar shape, such as an elliptical shape, a rectangular shape, or a more polygonal shape.

[0240] A plurality of second electrodes 220_2 may be disposed in each subpixel PXn. For example, in each subpixel PXn, three second electrodes 220_2 may be disposed corresponding to the first to third holes HOL1 to HOL3 of the first electrode 210_2. The second electrode 220_2 may be located in each of the first to third holes HOL1 to HOL3 and may be surrounded by the first electrode 210_2.

[0241] In an exemplary embodiment, each hole HOL of the first electrode 210_2 may have an outer surface with a curved shape, and the second electrode 220_2 disposed corresponding to the hole HOL of the first electrode 210_2 may have an outer surface with a curved shape and may be spaced apart from and face the first electrode 210_2. Fig.17 , the first electrode 210_2 includes holes HOL each having a circular shape in a plan view, and the second electrode 220_2 may have a circular shape in a plan view. In the first electrode 210_2, the curved surface of the region in which the hole HOL is formed may be spaced apart from and face the curved outer surface of the second electrode 220_2. As an example, the first electrode 210_2 may be disposed to surround the outer surface of the second electrode 220_2.

[0242] As described above, the light emitting element 300 may be disposed between the first electrode 210_2 and the second electrode 220_2. The display device 10_2 according to the present embodiment may include the second electrode 220_2 having a circular shape and the first electrode 210_2 disposed to surround the second electrode 220_2, and a plurality of light emitting elements 300 may be arranged along the curved outer surface of the second electrode 220_2. As described above, since each light emitting element 300 has a shape extending in one direction, the light emitting element 300 arranged along the curved outer surface of the second electrode 220_2 in each sub-pixel PXn may be arranged so that its extension direction points to different directions. Each sub-pixel PXn may have various emission directions according to the direction in which the extension direction of the light emitting element 300 points. In the display device 10_2 according to the present embodiment, each of the first electrode 210_2 and the second electrode 220_2 is disposed to have a curved shape, and thus the light emitting element 300 disposed therebetween may be disposed to point to different directions, so that the lateral visibility of the display device 10_2 may be improved.

[0243] In summarizing the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the disclosed preferred embodiments of the present invention are used in a general and descriptive sense only and not for limiting purposes.

Claims

1. Light-emitting element, including: doping a first semiconductor layer having a first polarity; a second semiconductor layer doped to have a second polarity different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer; as well as an insulating layer arranged to surround at least an outer surface of the active layer, The insulating layer includes an insulating film and an element dispersant, the insulating film surrounds the active layer, and the element dispersant includes a magnetic metal and is bonded to an outer surface of the insulating film. 2 . The light-emitting element according to claim 1 , wherein the element dispersant includes a ligand configured to form a coordinate bond with the magnetic metal and a first functional group bonded to the ligand.

3. The light emitting element according to claim 2, wherein The ligand is one of a porphyrin structure and a multidentate structure, and The magnetic metal is one of Fe, Co, Ni, Mn and Cr. The light-emitting element according to claim 2 , wherein the first functional group forms a chemical bond with the insulating film. 5 . The light-emitting element according to claim 4 , wherein the first functional group is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group, and a phosphoric acid group. 6 . The light-emitting element according to claim 4 , wherein the element dispersant further includes at least one second functional group, the second functional group includes a hydrophobic functional group and is bonded to the ligand. 7 . The light-emitting element according to claim 6 , wherein the second functional group includes at least one of an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms.

8. The light-emitting element according to claim 1, wherein the element dispersant has a structure represented by one of the following Chemical Formulas A to D, [Chemical formula A] [Chemical formula B] [Chemical formula C] [Chemical formula D] Where M is Fe 2+ , Mn 2+ 、Co 2+ 、Ni 2+ and Cr 2+ At least one of R1 is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group and a phosphoric acid group, Each of R2 to R4 is independently one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms, n is an integer from 1 to 6, and Dashed lines indicate coordinate bonding.

9. A display device, comprising: a first electrode and a second electrode spaced apart from the first electrode and facing the first electrode; as well as a light emitting element disposed between the first electrode and the second electrode, The light emitting element comprises: doping a first semiconductor layer having a first polarity; a second semiconductor layer doped to have a second polarity different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulating layer arranged to surround at least an outer surface of the active layer, The insulating layer includes an insulating film and an element dispersant, the element dispersant includes a magnetic metal and is bonded to an outer surface of the insulating film.

10. The display device of claim 9, wherein the element dispersant includes a ligand configured to form a coordination bond with the magnetic metal, a first functional group bonded to the ligand to form a chemical bond with the insulating film, and at least one second functional group including a hydrophobic functional group and bonded to the ligand.

11. The display device according to claim 10, wherein the element dispersant has a structure represented by one of the following Chemical Formulas A to D, [Chemical formula A] [Chemical formula B] [Chemical formula C] [Chemical formula D] Where M is Fe 2+ , Mn 2+ 、Co 2+ 、Ni 2+ and Cr 2+ At least one of R1 is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group and a phosphoric acid group, Each of R2 to R4 is independently one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms, n is an integer from 1 to 6, and Dashed lines indicate coordinate bonding.

12. The display device according to claim 9, further comprising: a first insulating layer disposed between the first electrode and the second electrode and configured to cover at least a portion of each of the first electrode and the second electrode; as well as a second insulating layer disposed on the first insulating layer between the first electrode and the second electrode, The light emitting element is disposed between the first insulating layer and the second insulating layer. 13 . The display device according to claim 12 , wherein the element dispersant of the light emitting element directly contacts the first insulating layer and the second insulating layer.

14. A method for manufacturing a display device, the method comprising: preparing an ink in which light-emitting elements are dispersed, each of the light-emitting elements including a semiconductor core and an insulating layer surrounding the semiconductor core, and applying a magnetic field to the light-emitting elements; preparing a target substrate on which a first electrode and a second electrode disposed spaced apart from each other are formed, and ejecting the ink in which the light emitting elements are dispersed onto the target substrate; as well as placing the light emitting element between the first electrode and the second electrode by generating an electric field on the target substrate, The insulating layer includes an insulating film and an element dispersant, the element dispersant includes a magnetic metal and is bonded to an outer surface of the insulating film.

15. The method of claim 14, wherein the semiconductor core comprises: doping a first semiconductor layer having a first polarity; a second semiconductor layer doped to have a second polarity different from the first polarity; an active layer disposed between the first semiconductor layer and the second semiconductor layer; as well as The insulating layer is arranged to surround at least the outer surface of the active layer.

16. The method of claim 15, wherein a magnetic force is applied to the magnetic metal of the element dispersant due to the magnetic field, and In the applying of the magnetic field, the magnetic force is transmitted to the light emitting element in a direction opposite to a direction of gravity.

17. The method of claim 16, wherein the ink is ejected onto the target substrate in a state in which the magnetic field is applied.

18. The method of claim 16, wherein: In the placement of the light emitting elements, one end portion of each of the light emitting elements is disposed on the first electrode and the other end portion thereof is disposed on the second electrode by the electric field.

19. The method of claim 15, wherein the element dispersant includes a ligand configured to form a coordination bond with the magnetic metal, a first functional group bonded to the ligand to form a chemical bond with the insulating film, and at least one second functional group including a hydrophobic functional group and bonded to the ligand.

20. The method of claim 15, wherein the element dispersant has a structure represented by one of the following Chemical Formulas A to D, [Chemical formula A] [Chemical formula B] [Chemical formula C] [Chemical formula D] Where M is Fe 2+ , Mn 2+ 、Co 2+ 、Ni 2+ and Cr 2+ At least one of R1 is at least one of a silane group, a borate group, a carboxylic acid group, an amine group, a thiol group and a phosphoric acid group, Each of R2 to R4 is independently one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 3 to 6 carbon atoms, n is an integer from 1 to 6, and Dashed lines indicate coordinate bonding.

Images