EUV super high condensing efficiency reflector bowl combination device

Abstract

The utility model provides a kind of EUV super high light-gathering efficiency reflector bowl combination device, including base (1), the base (1) is provided with main reflector bowl (6), side reflector ring bowl (7) and lower reflector bowl (8);It is characterized by: the lower reflector bowl (8) is fixedly supported by support mechanism (3) on side reflector ring bowl (7), and the lower reflector bowl (8) is scattered to the side reflector ring bowl (7) on the EUV (11) of plasma emission again reflection and the reflection EUV light of main reflector bowl (6) superposition converges on same intermediate focus (4).The utility model improves 30-45% of intermediate focus (4) light power by the focusing of lower reflector bowl (8) and side reflector ring bowl (7) structure, greatly saves electric energy, and makes chip manufacturing more environmentally friendly.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of EUV lithography technology and nuclear fusion technology, in particular to a kind of EUV super high light-gathering efficiency reflector bowl combination device. BACKGROUND

[0002] With the requirement of chip manufacturing industry, and the rapid development of chip, micro chip develops faster and faster, but because the EUV light source power of the current photolithography machine is difficult to improve, and the photolithography speed is not high, the production period is longer.

[0003] The reflector bowl device is one of the core devices of the photolithography machine, the EUV light source power is difficult to improve, the existing EUV reflector bowl only has one, and the reflectivity cannot exceed 50%, which wastes valuable energy, increases the photolithography time, and is not conducive to mass production, so it is urgent to improve the EUV light source power, so as to improve the mass production of micro chip. SUMMARY

[0004] According to the above problems, the present application provides a kind of EUV super high light-gathering efficiency reflector bowl combination device, the present application is to stack EUV main reflector bowl (6) and lower reflector bowl (8) to improve reflectivity, which is equivalent to improving the power of EUV light source.

[0005] The technical scheme of the present application is realized by the following way: a kind of EUV super high light-gathering efficiency reflector bowl combination device, comprising base (1), the base (1) is provided with main reflector bowl (6), side reflector ring bowl (7) and lower reflector bowl (8);Characterized in that: the lower reflector bowl (8) is fixed and supported on the side reflector ring bowl (7) by support mechanism (3), the lower reflector bowl (8) reflects the downward scattered EUV light of the EUV (11) emitted by the plasma to the side reflector ring bowl (7) again, and the reflected EUV light of the main reflector bowl (6) is superimposed and converged on the same intermediate focus (4), the light power of the intermediate focus (4) is improved by 30-45% by the focusing of the lower reflector bowl (8) and the side reflector ring bowl (7) structure.

[0006] The base (1) is provided with main reflector bowl (6), side reflector ring bowl (7).

[0007] The side reflector ring bowl (7) is provided with support mechanism (3) and lower reflector bowl (8).

[0008] One or more rods, tubes or strips are arranged on the support mechanism (3) to firmly support the lower reflector bowl (8).

[0009] The beneficial effects of the present invention are: by reflecting the EUV (11) emitted by the plasma downward through the lower reflector bowl (8) to the side reflector ring bowl (7) and then reflecting it again, the EUV light reflected by the main reflector bowl (6) is superimposed and converged on the same EUV intermediate focal point (4). The present invention improves the optical power of the intermediate focal point (4) by 30-45% through the focusing of the structure of the lower reflector bowl (8) and the side reflector ring bowl (7). Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the overall structure of the present invention.

[0011] Figure 2 This is a schematic diagram of the semi-transparent three-dimensional structure of the present invention.

[0012] In the figure, the base is (1); the plasma material channel is (2); the support mechanism is (3); and the central focus is (4).

[0013] Optical path reflector (5); main reflector bowl (6); side reflector ring bowl (7); lower reflector bowl (8); working surface or line (9); etc.

[0014] Plasma bombardment device (10); EUV plasma emission device (11). Detailed Implementation

[0015] To enhance understanding of the present invention, the invention will be further described below with reference to the accompanying drawings and embodiments. These embodiments are only used to explain the invention and do not constitute a limitation on the scope of protection of the invention.

[0016] Depend on Figure 1 Known to be an EUV ultra-high focusing efficiency reflector bowl combination device, characterized in that: the EUV (11) emitted by the plasma generated by the plasma bombardment device (10) after the plasma material channel (2) provides the material is bombarded by the plasma material channel (2) is reflected upward by the main reflector bowl (6) to the central focal point (4); the EUV (11) emitted downward is reflected downward by the lower reflector bowl (8) to the side reflector ring bowl (7) and then reflected to the central focal point (4). The EUV reflected by the lower reflector bowl (8) is arranged in a cross-shaped manner, passing through the narrow gap between the lower reflector bowl (8) and the main reflector bowl (6) to the side reflector ring bowl (7), and then reflected and superimposed to the central focal point (4). After passing through the central focal point (4), it is incident on the optical path reflector device (5) and then reflected out onto the working surface or line (9) for application. This structure maximizes the reflective area of ​​each component to improve the light-gathering efficiency, thereby increasing the light power of the central focal point (4) by 30-45%, greatly saving energy and making chip manufacturing more environmentally friendly.

[0017] The application discloses a kind of EUV super high light-gathering efficiency reflecting bowl combination device, including base (1), the base (1) is provided with main reflecting bowl (6), side reflecting ring bowl (7) and lower reflecting bowl (8);It is characterized in that: the lower reflecting bowl (8) is supported by support mechanism (3) on side reflecting ring bowl (7), the lower reflecting bowl (8) is scattered by EUV (11) emitted by plasma downward EUV light reflection to side reflecting ring bowl (7) again reflection and the EUV light reflected by main reflecting bowl (6) is superimposed and converged on the same intermediate focus (4), the EUV reflected by the lower reflecting bowl (8) is arranged in the form of intersection and is passed through the narrow gap of lower reflecting bowl (8) and main reflecting bowl (6) to side reflecting ring bowl (7) again reflection superimposed focusing on intermediate focus (4);It is characterized in that: according to the reversibility of light, high-power laser is used to bombard nuclear fusion material at EUV (11) emitted by plasma through intermediate focus (4).

[0018] The embodiments of the present application disclose the preferred embodiments, but are not limited thereto, and those skilled in the art can easily understand the spirit of the present application according to the above-mentioned embodiments, and make different inferences and changes, as long as they do not deviate from the spirit of the present application, they are within the protection scope of the present application.

Claims

1. An EUV super-high condensing efficiency reflector bowl combination device, comprising a base (1), wherein a main reflector bowl (6), a side reflector ring bowl (7) and a lower reflector bowl (8) are arranged on the base (1); characterized in that: The lower reflecting bowl (8) is fixed and supported by the supporting mechanism (3) on the side reflecting ring bowl (7), the lower reflecting bowl (8) reflects the downward scattered EUV light of the EUV (11) emitted by the plasma to the side reflecting ring bowl (7) to be reflected again and the EUV light reflected by the main reflecting bowl (6) is superimposed and converged on the same intermediate focus (4), then the EUV light is incident on the light path reflecting device (5) through the intermediate focus (4) again to be reflected out of the working surface or line (9) for application, the EUV light reflected by the lower reflecting bowl (8) is arranged in a cross form and passes through the narrow gap between the lower reflecting bowl (8) and the main reflecting bowl (6) to the side reflecting ring bowl (7) to be reflected again, superimposed and focused on the intermediate focus (4); this structure increases the reflecting area as much as possible to improve the condensing efficiency and increase the light power of the intermediate focus (4) by 30-45%.

2. The EUV super high condensing efficiency reflector bowl combination device according to claim 1, characterized in that: The supporting mechanism (3) is provided with one or more rods, tubes or strips to firmly support the lower reflecting bowl (8).

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