Semiconductor process equipment

Abstract

The present invention provides a semiconductor process equipment, including a process chamber and an electrostatic chuck arranged in the process chamber, wherein a plurality of bumps are arranged on the bearing surface of the electrostatic chuck for supporting a wafer; the equipment also includes a charge elimination device and a grounded wafer taking component; wherein the charge elimination device includes an elastic conductive component, which can produce elastic deformation under the action of electrostatic force when placed on the plurality of bumps and when the electrostatic chuck is energized, so as to contact the bearing surface of the electrostatic chuck to transfer the residual charge on the bearing surface; the wafer taking component is used to place the elastic conductive component on the plurality of bumps, or to take the elastic conductive component away from the plurality of bumps; the wafer taking component is grounded. The semiconductor process equipment provided by the present invention can quickly eliminate the residual charge on the bearing surface of the electrostatic chuck, and does not require opening the process chamber.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a semiconductor process equipment. Background Art

[0002] In the PVD (Physical Vapor Deposition) process, an electrostatic chuck is usually used to fix the wafer. At the same time, the electrostatic chuck also has the function of heating the wafer to maintain the wafer temperature at a preset process temperature until the process ends. In addition, in order to improve the heat exchange efficiency between the electrostatic chuck and the wafer, it is necessary to pass gas between the electrostatic chuck and the wafer and maintain it at a certain pressure to achieve heat exchange between the electrostatic chuck and the wafer through the gas. With the use of the electrostatic chuck, residual charge will accumulate on the surface of the electrostatic chuck, but due to the uncontrollable residual charge, it is often unevenly distributed on the electrostatic chuck, which will cause the electrostatic chuck to unevenly distribute the adsorption force of the wafer, thereby affecting the stability of the gas pressure between the electrostatic chuck and the wafer, and even causing the wafer to detach from the surface of the electrostatic chuck, causing the wafer to be damaged and scrapped.

[0003] The traditional method of eliminating the residual charge accumulated on the surface of the electrostatic chuck is usually: first cool the electrostatic chuck to room temperature, then open the chamber, and use a dust-free cloth soaked in isopropyl alcohol (IPA) to wipe the surface of the electrostatic chuck to eliminate the residual charge on the surface of the electrostatic chuck. However, the process temperature of the PVD process is generally between 200°C and 400°C. It generally takes 6 to 8 hours to cool down to room temperature, and after the residual charge is eliminated, it takes a long time to raise the temperature in the chamber back to the process temperature. It can be seen that the traditional method of eliminating the residual charge on the surface of the electrostatic chuck is simple, but it takes a long time and seriously affects the process efficiency of the chamber. Therefore, it has become an urgent problem to be solved in the field of semiconductor technology to propose a method that can quickly and efficiently eliminate the residual charge on the surface of the electrostatic chuck. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment, which can quickly eliminate the residual charge on the carrying surface of the electrostatic chuck without opening the process chamber.

[0005] To achieve the purpose of the present invention, a semiconductor process equipment is provided, comprising a process chamber and an electrostatic chuck arranged in the process chamber, wherein a plurality of bumps are arranged on the bearing surface of the electrostatic chuck for supporting a wafer; a charge elimination device and a wafer taking component are also included; wherein,

[0006] The charge elimination device includes an elastic conductive component, which is placed on the plurality of protrusions and can produce elastic deformation under the action of electrostatic force when the electrostatic chuck is energized, so as to contact the bearing surface of the electrostatic chuck to transfer the residual charge on the bearing surface;

[0007] The sheet taking component is used to place the elastic conductive component on the plurality of the protruding points, or to take the elastic conductive component away from the plurality of the protruding points; the sheet taking component is grounded.

[0008] Optionally, the elastic conductive component includes an elastic diaphragm, the elastic diaphragm is capable of elastic deformation, and the elastic deformation amount of the elastic diaphragm is sufficient for it to contact the bearing surface.

[0009] Optionally, the charge elimination device further includes a substrate, and the substrate is overlapped with the elastic diaphragm.

[0010] Optionally, the charge elimination device also includes a connecting ring, which is arranged on a side of the substrate facing the elastic diaphragm, the substrate and the elastic diaphragm are connected via the connecting ring, and the two opposite surfaces of the elastic diaphragm and the substrate and the inner circumferential surface of the connecting ring can enclose a cavity.

[0011] Optionally, the connecting ring and the elastic diaphragm are connected by diffusion welding or brazing.

[0012] Optionally, the connecting ring and the base plate are formed integrally.

[0013] Optionally, the film taking component includes a robot arm, which is used to transfer the elastic conductive component to the process chamber and place it on the multiple bumps of the electrostatic chuck, or remove the elastic conductive component from the electrostatic chuck and transfer it to the outside of the process chamber, and the robot arm is grounded.

[0014] Optionally, the film-removing component includes a plurality of ejector pins, which penetrate the electrostatic chuck and perform lifting and lowering movements; each ejector pin is used to perform an ascending movement to lift the elastic conductive component from the electrostatic chuck, or to perform a descending movement to transfer the elastic conductive component to the plurality of protrusions of the electrostatic chuck; and the plurality of ejector pins are grounded.

[0015] Optionally, the elastic conductive component is made of stainless steel, aluminum or titanium.

[0016] Optionally, the size and weight of the elastic conductive component are the same as the size and weight of the wafer.

[0017] The present invention has the following beneficial effects:

[0018] The semiconductor process equipment provided by the present invention comprises a charge elimination device for eliminating residual charges on an electrostatic chuck and a grounded film taking component; the charge elimination device specifically comprises an elastic conductive component, which can be adsorbed on the bearing surface of the electrostatic chuck under the action of electrostatic force, and when adsorbed on the bearing surface, the elastic conductive component can produce elastic deformation so as to be able to fully contact with the bumps in the bearing surface and the non-bump areas other than the bumps, thereby utilizing the conductivity of the elastic conductive component to completely transfer the residual charges remaining on the surface of the electrostatic chuck to the elastic conductive component, and introduce them into the ground wire through the film taking component, and because the film taking component can place the elastic conductive component on multiple bumps and take the elastic conductive component away from multiple bumps, the residual charges on the electrostatic chuck can be eliminated without opening a cavity, thereby greatly shortening the time used to eliminate the residual charges on the surface of the electrostatic chuck. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of a local structure of a semiconductor process equipment proposed in an embodiment of the present invention;

[0020] Figure 2 This is a simplified diagram of the charge distribution when the electrostatic chuck adsorbs the wafer;

[0021] Figure 3 A simplified diagram of charge distribution when the electrostatic chuck adsorbs the wafer after residual charge is accumulated;

[0022] Figure 4 A simplified diagram of charge distribution when the electrostatic chuck adsorbs the elastic conductive component after accumulating residual charge;

[0023] Figure 5 is a simplified diagram of the charge distribution of the elastic conductive component after desorption;

[0024] Figure 6 A schematic diagram of the structure of an elastic conductive component proposed in an embodiment of the present invention;

[0025] Figure 7 for Figure 6 A partial enlarged view of the middle area A;

[0026] Figure 8 A simplified structural diagram of a semiconductor process equipment proposed in an embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor process equipment provided by the present invention is described in detail below with reference to the accompanying drawings.

[0028] The present embodiment proposes a semiconductor process equipment, including a process chamber and an electrostatic chuck arranged in the process chamber, wherein a plurality of bumps are arranged on a carrying surface of the electrostatic chuck for supporting a wafer; since the material of the wafer is usually high-strength and not easy to bend, when the wafer is adsorbed on the carrying surface, the wafer is only subjected to the support force from the plurality of bumps, and does not contact the non-bump area of ​​the carrying surface, thereby reducing the impact of micro-particles on the wafer by reducing the contact area with the carrying surface.

[0029] Please refer to Figure 1 The semiconductor process equipment provided in this embodiment also includes a charge elimination device, which is used to eliminate residual charges on the surface of the electrostatic chuck 1. Specifically, the charge elimination device includes an elastic conductive component 2; the semiconductor process equipment also includes a grounded sheet removal component (not shown in the figure), which is used to place the elastic conductive component 2 on multiple bumps 11 and remove the elastic conductive component 2 from the multiple bumps 11.

[0030] When the elastic conductive component 2 is placed on the plurality of bumps 11 on the bearing surface of the electrostatic chuck 1 and the electrostatic chuck 1 is powered, the elastic conductive component 2 will be adsorbed on the bearing surface. Since the elastic conductive component 2 has a certain elasticity, it will be elastically deformed under the action of the electrostatic force so as to be able to contact the bumps 11 on the bearing surface and the non-bump areas other than the bumps 11. In the process of the elastic conductive component 2 contacting the bearing surface, since the elastic conductive component 2 is conductive, the residual charge remaining on the surface of the electrostatic chuck 1 will be quickly transferred to the elastic conductive component 2.

[0031] When the electrostatic chuck 1 is powered off and the elastic conductive component 2 is removed from the multiple bumps 11 on the bearing surface, the grounded film-taking device will come into contact with the elastic conductive component 2, and all the charges in the elastic conductive component 2 will be quickly introduced into the ground wire through the film-taking device; in this way, the residual charges on the bearing surface of the electrostatic chuck 1 can be eliminated very quickly, thereby greatly shortening the time taken to eliminate the residual charges of the electrostatic chuck. Moreover, the elastic conductive component 2 can be placed in and taken out of the process chamber by the film-taking component, so that the process chamber does not need to be opened during the above-mentioned elimination of residual charges, so as to further shorten the time taken for the residual charges of the electrostatic chuck 1 and reduce the difficulty of removing the residual charges.

[0032] Please refer to Figure 2-5 Based on the semiconductor process equipment proposed in this embodiment, the basic principles of multiple processes such as the electrostatic chuck adsorbing the wafer, the electrostatic chuck accumulating residual charge, and the elastic conductive component eliminating the residual charge will be described in detail below.

[0033] Taking the dual-electrode electrostatic chuck 1 as an example, the electrostatic chuck 1 includes a chuck body and two electrostatic electrodes 12 disposed in the chuck body; the chuck body is made of insulating material, and the two electrostatic electrodes 12 in the electrostatic chuck 1 are connected to an external high-voltage DC power supply. When the high-voltage DC power supply applies a DC voltage to the electrostatic electrodes 12 in the chuck body, Figure 2 As shown, positive charges and negative charges will appear on the two electrostatic electrodes 12 respectively. When the wafer 3 is placed on the protrusion 11 in the carrying surface of the electrostatic chuck 1, according to the principle of electrostatic induction, the positions on the wafer 3 corresponding to the electrostatic electrodes 12 will induce corresponding positive induced charges and negative induced charges. In this way, the positive and negative charges on the electrostatic electrodes 12 and the negative and positive charges on the surface of the wafer 3 will generate mutually attractive electrostatic forces, thereby causing the wafer 3 to be adsorbed on the carrying surface of the electrostatic chuck 1.

[0034] like Figure 3 As shown, after a plasma process has been carried out in the process chamber for a certain period of time, a certain amount of residual charge e will accumulate on the carrying surface of the electrostatic chuck 1. Under the condition that the DC voltage applied by the high-voltage DC power supply to the electrostatic electrode 12 remains unchanged, when there is no residual charge e on the carrying surface of the electrostatic chuck 1, the number of negative induced charges on the wafer 3 is equal to the number of positive charges on the electrostatic electrode 12, and the number of positive induced charges on the wafer 3 is equal to the number of negative charges on the electrostatic electrode 12; when there is residual charge e on the carrying surface of the electrostatic chuck 1, the number of positive and negative charges on the electrostatic electrode 12 remains unchanged, but the induced charge generated on the wafer 3 will be affected by the residual charge e, and the number of induced charges generated on the wafer 3 plus the number of residual charges e is equal to the number of charges on the electrostatic electrode 12. Compared with the case where there is no residual charge e on the carrying surface, the number of induced charges on the wafer 3 is reduced; specifically, as Figure 3 As shown, taking the case where the residual charge e is a negative charge as an example, the position on the wafer 3 corresponding to the residual charge e will not generate a negative induced charge, and thus the corresponding position on the wafer 3 and the electrostatic electrode 12 will not generate an electrostatic force of mutual attraction, or the position on the wafer 3 corresponding to the residual charge e will generate a positive induced charge, and thus the corresponding position on the wafer 3 and the electrostatic electrode 12 will generate a strong electrostatic force of mutual attraction; and as Figure 3 As shown, the residual charge e on the carrying surface is often unevenly distributed, which will cause the electrostatic chuck 1 to have an uneven overall adsorption force on the wafer 3. When air is ventilated between the wafer 3 and the electrostatic chuck 1, the airflow will be unstable and may even blow the wafer 3 away, seriously affecting the process results.

[0035] In order to eliminate the residual charge e, the elastic conductive component 2 proposed in this embodiment can be placed on the bearing surface of the electrostatic chuck 1, and the high-voltage DC power supply is turned on to apply a DC voltage to the electrostatic electrode 12, such as Figure 4As shown, the lower surface of the elastic conductive component 2 will generate induced charges, which will generate electrostatic adsorption force with the electrostatic electrode 12 to adsorb the elastic conductive component 2 on the bearing surface; under the action of the electrostatic force and the supporting force of the bumps 11, the elastically deformable elastic conductive component 2 can contact the bumps 11 on the bearing surface and the non-bump areas except the bumps 11. Since the chuck body is made of insulating material and the elastic conductive component 2 has good conductivity, the residual charge e on the surface of the electrostatic chuck 1 will be quickly transferred to the elastic conductive component 2. Moreover, as Figure 5 As shown, after the power supply of the electrostatic chuck 1 is cut off, the adsorption force between the elastic conductive component 2 and the electrostatic chuck 1 disappears, and then the elastic conductive component 2 will return to its original state, and the residual charge e will remain on the elastic conductive component 2; then, when the grounded film-taking component contacts the elastic conductive component 2, the residual charge e on the elastic conductive component 2 will be quickly introduced into the ground wire, thereby completing the elimination of the residual charge e.

[0036] In some embodiments, the weight and size of the elastic conductive component 2 can be designed to be the same as the weight and size of the wafer 3. In this way, the adsorption stability of the elastic conductive component 2 can be ensured, and the wafer picking component originally used to pick up and place the wafer can be reused, and there is no need to modify the pre-set process parameters such as the electrostatic chuck output power, the gripping force of the wafer picking component, and the air flow rate inside the chamber.

[0037] In some embodiments, Figure 6 As shown, the elastic conductive component 2 includes an elastic diaphragm 21, which can be elastically deformed, and the elastic deformation of the elastic diaphragm 21 satisfies that it can contact with the bearing surface and can fit with each convex point 11 and non-convex point area on the bearing surface. However, in other embodiments, if the bearing surface of the electrostatic chuck 1 is a plane, a conductive component with a plane surface can be used to completely contact the bearing surface. Therefore, a non-elastic diaphragm, such as a graphite sheet, can be used to replace the above-mentioned elastic conductive component 2.

[0038] In some embodiments, in order to prevent the single elastic diaphragm 21 from being blown up by the airflow in the process chamber due to its own lightness, Figure 6 As shown, the charge elimination device also includes a substrate 22, which is superimposed on the elastic conductive component 2, and the opposite surfaces of the two are connected, so that the elastic diaphragm 21 can be stably adsorbed on the supporting surface during the process of eliminating residual charge and is not easily blown up by the airflow.

[0039] In some embodiments, Figure 7As shown, the charge elimination device further includes a connecting ring 23, which is arranged on the side of the substrate 22 facing the elastic diaphragm 21. The substrate 22 is connected to the elastic conductive component 2 through the connecting ring 23, and the two opposing surfaces of the elastic diaphragm 21 and the substrate 22 and the inner circumference of the connecting ring 23 can enclose a cavity. Specifically, the formation of a cavity between the elastic diaphragm 21 and the substrate 22 is conducive to the deformation of the elastic diaphragm 21. The elastic diaphragm 21 can only be elastic when it is suspended, otherwise it is closely attached to the substrate 22, which limits its elastic deformation. Figure 4 As shown, when the elastic diaphragm 21 is adsorbed on the bearing surface, under the action of the electrostatic force and the support force of the bumps 11, part of the elastic diaphragm 21 will bulge toward the substrate 22, and part of the elastic diaphragm 21 will bulge toward the surface of the electrostatic chuck, and the above-mentioned cavity can accommodate the deformation of the elastic diaphragm 21 protruding toward the substrate 22, thereby ensuring that the deformation of the elastic diaphragm 21 can meet the requirements of its complete contact with the bumps 11 on the bearing surface and the non-bump areas other than the bumps 11. Preferably, the above-mentioned cavity is completely sealed, and when the elastic diaphragm 21 is deformed due to being adsorbed on the bearing surface, the cavity can accommodate the deformation of the elastic diaphragm, thereby realizing the reuse of the elastic diaphragm 21.

[0040] In some embodiments, the elastic diaphragm 21 is made of a metal with good elasticity such as stainless steel, aluminum or titanium, so as to ensure that the elastic diaphragm 21 can quickly return to its original state after desorption, thereby realizing the reuse of the elastic diaphragm 21. Moreover, the above-mentioned material has good heat resistance and can adapt to the high temperature environment inside the process chamber, so that the residual charge can be eliminated without cooling the process chamber or the electrostatic chuck, which greatly shortens the time used to eliminate the residual charge and improves the process efficiency of the chamber. The material of the substrate and the elastic diaphragm can be the same or different, and can be selected according to the combination process of the visual base and the elastic diaphragm. In addition, the deformation amount of the elastic diaphragm is determined according to the height of the bump of the electrostatic chuck, ensuring that the elastic deformation amount of the elastic diaphragm is greater than the height of the bump of the electrostatic chuck, so that the deformed elastic diaphragm can contact the surface of the electrostatic chuck.

[0041] When the elastic diaphragm 21 is deformed due to adsorption on the bearing surface, the deformation of the elastic diaphragm 21 is often located in the middle area of ​​the diaphragm, and the edge area of ​​the elastic diaphragm 21 will generate tensile stress due to the deformation of the middle area, which will cause the connection between the elastic diaphragm 21 and the connecting ring 23 to be subjected to the same direction of tension. In order to avoid the elastic diaphragm 21 and the connecting ring 23 from being separated due to the tension, the two need to be connected in a way with a strong connection force. In some embodiments, the connecting ring 23 and the elastic diaphragm 21 are connected by diffusion welding or brazing. Specifically, diffusion welding refers to contacting the two materials to be welded with each other under the action of high temperature and pressure, so that the two materials are locally plastically deformed and atoms diffuse mutually at the deformation point, and finally form a diffusion layer that blends with each other; brazing refers to heating the brazing material and the workpiece to be welded to the melting temperature of the brazing material at the same time, filling the gap of the solid workpiece with liquid brazing material, and finally bonding the two workpieces to be welded tightly with the brazing material; the above two welding methods have strong connection force and are not easy to separate.

[0042] In some embodiments, the connecting ring 23 and the base plate 22 are integrally formed; specifically, in actual production, the connecting ring 23 and the base plate 22 may be manufactured by stamping or other methods to ensure the connection stability between the connecting ring 23 and the base plate 22 .

[0043] In some embodiments, the film taking component includes a robot arm, which is used to transfer the elastic conductive component 2 into the process chamber and place it on the multiple bumps 11 of the electrostatic chuck 1, or to remove the elastic conductive component 2 from the electrostatic chuck 1 and transfer it to the outside of the process chamber, and the robot arm is grounded.

[0044] In some embodiments, the film-taking component includes a plurality of ejector pins, which are arranged to penetrate the electrostatic chuck 1 and perform lifting and lowering movements; each ejector pin is used to perform an ascending movement to lift the elastic conductive component from the electrostatic chuck 1, or to perform a descending movement to transfer the elastic conductive component 2 to a plurality of bumps 11 of the electrostatic chuck 1; and a plurality of ejector pins are grounded.

[0045] In some preferred embodiments, the film taking component includes a manipulator and a plurality of ejectors, which can cooperate to complete the film transfer and taking. Figure 8Taking the manipulator and ejector pins shown as an example, when the ejector pins 5 are raised, the manipulator 4 is used to support the elastic conductive component 2 to extend from the film transfer port, and descend above the electrostatic chuck 1 until the elastic conductive component 2 falls on the ends of multiple ejector pins 5; then, the unloaded manipulator 4 moves out of the film transfer port, and the ejector pins 5 move downward until the elastic conductive component 2 falls on the bearing surface; after the charge elimination is completed, the ejector pins 5 move upward to lift the elastic conductive component 2 from the bearing surface, and at the same time, the charge on the elastic conductive component 2 will be introduced into the ground wire through the grounded multiple ejector pins 5; the unloaded manipulator 4 extends from the film transfer port and moves below the elastic conductive component 2 to lift the elastic conductive component 2, and supports the elastic conductive component 2 to move out of the film transfer port. The above-mentioned manipulator 4 and ejector pins 5 are not only used to support the elastic conductive component 2, but also used to support the wafer 3 in the semiconductor process, that is, the above-mentioned elastic conductive component 2 does not need to be additionally provided with a dedicated film-taking component in the traditional process chamber, so as to reduce the modification cost of the process equipment.

[0046] As another technical solution, based on the above semiconductor process equipment, this embodiment also provides a method for eliminating residual charge of an electrostatic chuck, which specifically includes:

[0047] Step S1: placing an elastic conductive component on a bearing surface of an electrostatic chuck;

[0048] Step S2: energizing the electrostatic electrodes in the electrostatic chuck to adsorb the elastic conductive component onto the bearing surface;

[0049] Step S3: De-energize the electrostatic electrodes in the electrostatic chuck, and remove the elastic conductive component from the bearing surface.

[0050] In some embodiments, before performing the above step S1, it also includes:

[0051] Determine whether the working time of the electrostatic chuck reaches the preset maintenance time. If so, place the elastic conductive component on the bearing surface of the electrostatic chuck; if not, continue to determine.

[0052] Specifically, the preset maintenance time is the time for the electrostatic chuck bearing surface to accumulate a specified amount of residual charge, which can be obtained through multiple tests; and the specified amount of residual charge can be set according to actual process requirements.

[0053] The semiconductor process equipment provided in this embodiment includes a charge elimination device for eliminating residual charges on an electrostatic chuck and a grounded film taking component; the charge elimination device specifically includes an elastic conductive component, which can be adsorbed on the bearing surface of the electrostatic chuck under the action of electrostatic force, and when adsorbed on the bearing surface, the elastic conductive component can produce elastic deformation so as to be able to fully contact with the bumps in the bearing surface and the non-bump areas other than the bumps, thereby utilizing the conductivity of the elastic conductive component to completely transfer the residual charges remaining on the surface of the electrostatic chuck to the elastic conductive component, and introduce them into the ground wire through the film taking component, and because the film taking component can place the elastic conductive component on multiple bumps and remove the elastic conductive component from multiple bumps, the residual charges on the electrostatic chuck can be eliminated without opening a cavity, thereby greatly shortening the time used to eliminate the residual charges on the surface of the electrostatic chuck.

[0054] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process equipment, comprising a process chamber and an electrostatic chuck arranged in the process chamber, wherein a plurality of bumps are arranged on a bearing surface of the electrostatic chuck for supporting a wafer, It is characterized in that It also includes a charge elimination device and a film taking component; wherein, The charge elimination device includes an elastic conductive component, which is placed on the plurality of protrusions and can produce elastic deformation under the action of electrostatic force when the electrostatic chuck is energized, so as to contact the bearing surface of the electrostatic chuck to transfer the residual charge on the bearing surface; The sheet taking component is used to place the elastic conductive component on the plurality of the protruding points, or to take the elastic conductive component away from the plurality of the protruding points; the sheet taking component is grounded.

2. The semiconductor process equipment according to claim 1, It is characterized in that The elastic conductive component includes an elastic diaphragm, the elastic diaphragm can be elastically deformed, and the elastic deformation of the elastic diaphragm is sufficient for it to contact the bearing surface.

3. The semiconductor process equipment according to claim 2, It is characterized in that The charge eliminating device further comprises a substrate, and the substrate is overlapped with the elastic diaphragm.

4. The semiconductor process equipment according to claim 3, It is characterized in that The charge elimination device also includes a connecting ring, which is arranged on the side of the substrate facing the elastic diaphragm. The substrate and the elastic diaphragm are connected through the connecting ring, and the two opposite surfaces of the elastic diaphragm and the substrate and the inner circumference of the connecting ring can form a cavity.

5. The semiconductor process equipment according to claim 4, It is characterized in that The connecting ring and the elastic diaphragm are connected by diffusion welding or brazing.

6. The semiconductor process equipment according to claim 4, It is characterized in that The connecting ring is integrally formed with the base plate.

7. The semiconductor process equipment according to claim 1, It is characterized in that The film-taking component includes a robot arm, which is used to transfer the elastic conductive component to the process chamber and place it on the multiple bumps of the electrostatic chuck, or to take the elastic conductive component from the electrostatic chuck and transfer it to the outside of the process chamber, and the robot arm is grounded.

8. The semiconductor process equipment according to claim 1, It is characterized in that The film taking component includes a plurality of ejector pins, which are arranged through the electrostatic chuck and perform lifting and lowering movements; each of the ejector pins is used to perform an upward movement to lift the elastic conductive component from the electrostatic chuck, or to perform a downward movement to transfer the elastic conductive component to the plurality of protrusions of the electrostatic chuck; A plurality of ejector pins are grounded.

9. The semiconductor process equipment according to claim 1, It is characterized in that The elastic conductive component is made of stainless steel, aluminum or titanium.

10. The semiconductor process equipment according to claim 1, It is characterized in that The size and weight of the elastic conductive component are the same as those of the wafer.

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