Semiconductor device manufacturing sheet and method for manufacturing the same, and method for manufacturing semiconductor chip with film-like adhesive

Abstract

The present invention provides a sheet for manufacturing semiconductor devices, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, wherein the adhesive layer, the intermediate layer, and the film-like adhesive are sequentially laminated on the substrate, the intermediate layer contains a non-silicone resin (β1) having a weight-average molecular weight of 20,000 to 100,000 as a main component, the film-like adhesive contains a liquid component (α2), or the adhesive layer contains a liquid component (γ2), and the non-silicone resin (β1) is coated on the substrate. When the haze of the first test piece with a thickness of 10 μm is set to H(β), the haze of the second test piece with a thickness of 10 μm composed of a mixture of the non-silicone resin (β1) and the component (α2) is set to H(βα), and the haze of the third test piece with a thickness of 10 μm composed of a mixture of the non-silicone resin (β1) and the component (γ2) is set to H(βγ), H(βα)-H(β)>7% or H(βγ)-H(β)>7% is satisfied.

Description

Technical Field

[0001] The present invention relates to a sheet for manufacturing a semiconductor device, a method for manufacturing the sheet for manufacturing a semiconductor device, and a method for manufacturing a semiconductor chip with a film-like adhesive.

[0002] This application claims priority based on Japanese Patent Application No. 2020-058734, filed in Japan on March 27, 2020, and incorporates the contents herein. Background Art

[0003] When manufacturing a semiconductor device, a semiconductor chip with a film adhesive is used, which includes a semiconductor chip and a film adhesive provided on the back surface of the semiconductor chip.

[0004] As an example of a method for producing a semiconductor chip with a film-like adhesive, the following method can be mentioned.

[0005] That is, first, a dicing die bonding sheet is attached to the back surface of the semiconductor wafer.

[0006] Examples of cutting wafers include those having a support sheet and a film-like adhesive disposed on one surface of the support sheet. These support sheets can be used as cutting wafers. There are various types of support sheets with different structures, such as a support sheet having a base material and an adhesive layer disposed on one surface of the base material, and a support sheet consisting solely of a base material. For a support sheet having an adhesive layer, the outermost surface on the adhesive layer side is the surface on which the film-like adhesive is disposed. The cutting wafer is attached to the back surface of the semiconductor wafer via the film-like adhesive therein.

[0007] Next, the semiconductor wafer on the support sheet is cut together with the film adhesive by a blade cutting. The "cutting" of the semiconductor wafer is also called "division", whereby the semiconductor wafer is singulated into target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. Thus, a semiconductor chip with a film adhesive is obtained, which comprises a semiconductor chip and a cut film adhesive provided on the back side of the semiconductor chip, and at the same time, a semiconductor chip group with a film adhesive is obtained, in which a plurality of semiconductor chips with a film adhesive are maintained on the support sheet in an orderly arranged state.

[0008] Next, the semiconductor chip with the film-like adhesive is pulled off from the support sheet and picked up. In the case of using a support sheet with a curable adhesive layer, the adhesive layer is cured in advance to reduce the tackiness, thereby facilitating picking up.

[0009] In this way, a semiconductor chip with a film-like adhesive for use in manufacturing a semiconductor device is obtained.

[0010] As another example of the method for producing a semiconductor chip with a film-like adhesive, the following method can be cited.

[0011] That is, first, a backgrinding tape (sometimes also referred to as "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer.

[0012] Next, a predetermined portion for segmentation is set inside the semiconductor wafer, the area contained in the portion is used as a focus, and the laser is irradiated in a manner focused on the focus, thereby forming a modified layer inside the semiconductor wafer. Next, a grinder is used to grind the back side of the semiconductor wafer, thereby adjusting the thickness of the semiconductor wafer to a target value, and at the same time, by utilizing the force applied to the semiconductor wafer during grinding, the semiconductor wafer is segmented (singulated) at the formation portion of the modified layer to produce a plurality of semiconductor chips. This method of segmenting a semiconductor wafer accompanied by the formation of a modified layer is called Stealth Dicing (registered trademark), which is completely different in nature from laser cutting, which cuts the semiconductor wafer at the irradiated portion by irradiating the semiconductor wafer with a laser and simultaneously cuts the semiconductor wafer from the surface of the semiconductor wafer.

[0013] Next, a bonding wafer is attached to the ground backside (in other words, the ground surface) of all semiconductor chips fixed to the backgrinding tape. The bonding wafer can be made of the same material as the dicing bonding wafer. As mentioned above, the bonding wafer can sometimes be designed to have the same structure as the dicing bonding wafer, but it is not used when dicing the semiconductor wafer. The bonding wafer is also attached to the backside of the semiconductor chip via the film-like adhesive contained therein.

[0014] Next, after removing the back grinding tape from the semiconductor chip, the solid wafer is cooled and simultaneously stretched in a direction parallel to the surface of the solid wafer (for example, the surface of the film adhesive attached to the semiconductor chip), i.e., so-called expansion (cold expansion) is performed, thereby cutting the film adhesive along the periphery of the semiconductor chip.

[0015] In this way, a semiconductor chip with a film-like adhesive is obtained, which includes the semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip.

[0016] Next, in the same manner as in the case of dicing with a blade, the semiconductor chip with the film-like adhesive is pulled off the support sheet and picked up, thereby obtaining a semiconductor chip with the film-like adhesive used for manufacturing a semiconductor device.

[0017] Both the dicing wafer and the bonding wafer can be used to manufacture semiconductor chips with a film-like adhesive, and ultimately to manufacture the target semiconductor device. In this specification, the dicing wafer and the bonding wafer are collectively referred to as "sheets for semiconductor device manufacturing."

[0018] As a sheet for manufacturing semiconductor devices, for example, a dicing bonding tape (equivalent to the dicing bonding wafer) is disclosed, which has a structure in which a base layer (equivalent to the support sheet) and an adhesive layer (equivalent to the film-like adhesive) are laminated in direct contact (see patent document 1). For this dicing bonding tape, it is believed that since the 90-degree peeling force of the base layer and the adhesive layer at -15°C is adjusted to a specific range, the adhesive layer can be divided with good precision by expansion, and since the 90-degree peeling force of the base layer and the adhesive layer at 23°C is adjusted to a specific range, when using the dicing bonding tape, the semiconductor chip with the adhesive layer (equivalent to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and the semiconductor wafer and the semiconductor chip can be prevented from peeling off from the adhesive layer during the process until the pickup.

[0019] Prior art literature

[0020] Patent Literature

[0021] Patent Document 1: Japanese Patent Application Publication No. 2018-56289 Summary of the Invention

[0022] Technical Problems to be Solved by the Invention

[0023] However, when the support sheet in a semiconductor device manufacturing sheet includes the substrate and the adhesive layer, and the adhesive layer or film adhesive contains a component that is liquid at room temperature, the liquid component may migrate between the adhesive layer and the film adhesive in the semiconductor device manufacturing sheet. If this migration occurs, either or both of the adhesive layer and the film adhesive may not function properly. Furthermore, the dicing and die-bonding tape disclosed in Patent Document 1 does not include an adhesive layer.

[0024] An object of the present invention is to provide a sheet for manufacturing semiconductor devices comprising a substrate, an adhesive layer, and a film-like adhesive, wherein even if the adhesive layer or the film-like adhesive contains a liquid component, migration of the liquid component between the adhesive layer and the film-like adhesive can be suppressed.

[0025] Technical means to solve technical problems

[0026] The present invention provides a sheet for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, wherein the sheet for manufacturing a semiconductor device is formed by sequentially stacking the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, wherein the intermediate layer contains a non-silicone resin (β1) having a weight-average molecular weight of 20,000 to 100,000 as a main component, and further, at least the film-like adhesive contains a component (α2) or at least the adhesive layer contains a component (γ2), wherein the component (α2) is liquid at a temperature of 23° C. and does not react with the main component contained in the film-like adhesive. functional group, the component (γ2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with a main component contained in the adhesive layer, the haze of a first test piece in the form of a film having a thickness of 10 μm composed of the non-silicone resin (β1) is set to H(β), and when the film-like adhesive contains the component (α2), the haze of a second test piece in the form of a film having a thickness of 10 μm composed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is set to H(βα), in this case, the H(βα) and H(β) satisfy the following formula (X1):

[0027] (X1)H(βα)-H(β)>7%,

[0028] When the adhesive layer contains the component (γ2), the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0029] (X2)H(βγ)-H(β)>7%.

[0030] In the sheet for manufacturing a semiconductor device of the present invention, further, at least the film-like adhesive may contain a component (α1) that is solid at a temperature of 23°C as a main component, or at least the adhesive layer may contain a component (γ1) that is solid at a temperature of 23°C as a main component, and the component (α1) and the component (γ1) may be an acrylic resin having a structural unit derived from a (meth)acrylate.

[0031] In the sheet for manufacturing a semiconductor device of the present invention, the intermediate layer may contain one or two or more selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins as the non-silicone resin (β1).

[0032] In the sheet for manufacturing a semiconductor device of the present invention, the intermediate layer may contain an ethylene-vinyl acetate copolymer as the non-silicone resin (β1), and in the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units may be 30% by mass or less.

[0033] The sheet for manufacturing a semiconductor device of the present invention can be used to cut the film-like adhesive by cooling and expanding the film-like adhesive.

[0034] The present invention provides a method for manufacturing a sheet for manufacturing a semiconductor device, which is a method for manufacturing the sheet for manufacturing the semiconductor device, and the manufacturing method has any one or two of the following processes: a film adhesive manufacturing process for manufacturing the film adhesive containing the component (α2); and an adhesive layer manufacturing process for manufacturing the adhesive layer containing the component (γ2).

[0035] The present invention provides a method for manufacturing semiconductor chips with film-like adhesive, the method being a method for manufacturing semiconductor chips with film-like adhesive using the sheet for manufacturing semiconductor devices, wherein the semiconductor chips with film-like adhesive include a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, the method comprising the following steps: a step of heating the sheet for manufacturing semiconductor devices while simultaneously attaching the film-like adhesive therein to the back surface of a semiconductor wafer; a step of dicing the entire region in the thickness direction of the semiconductor wafer from the circuit-forming surface side of the semiconductor wafer to which the film-like adhesive is attached, thereby dividing the semiconductor wafer, thereby producing the semiconductor chips; a step of simultaneously dicing the film-like adhesive side of the sheet for manufacturing semiconductor devices along the thickness direction of the sheet to the middle region of the intermediate layer without dicing the adhesive layer, thereby severing the film-like adhesive and obtaining a group of semiconductor chips with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are aligned on the intermediate layer; and a step of pulling the semiconductor chips with film-like adhesive off the intermediate layer for picking up.

[0036] The present invention provides a method for manufacturing a semiconductor chip with a film-like adhesive, which is a method for manufacturing a semiconductor chip with a film-like adhesive using the sheet for manufacturing a semiconductor device, wherein the semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive provided on the back side of the semiconductor chip, and the manufacturing method comprises the following steps: irradiating a laser beam in a manner focused on a focal point set inside a semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer; grinding the back side of the semiconductor wafer after the modified layer is formed, and simultaneously dividing the semiconductor wafer at the location where the modified layer is formed by utilizing the force applied to the semiconductor wafer during grinding, thereby obtaining A process for forming a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; a process for heating the semiconductor device manufacturing sheet and simultaneously attaching the film adhesive therein to the back sides of all the semiconductor chips in the semiconductor chip group; a process for cooling the semiconductor device manufacturing sheet after being attached to the semiconductor chips and simultaneously stretching it in a direction parallel to its surface, thereby cutting the film adhesive along the outer periphery of the semiconductor chips to obtain a semiconductor chip group with film adhesive in which a plurality of semiconductor chips with film adhesive are neatly arranged on the intermediate layer; and a process for pulling the semiconductor chips with film adhesive away from the intermediate layer and picking them up.

[0037] Effects of the Invention

[0038] According to the present invention, a sheet for manufacturing a semiconductor device comprising a substrate, an adhesive layer, and a film-like adhesive can be provided, wherein even if the adhesive layer or the film-like adhesive contains a liquid component, migration of the liquid component between the adhesive layer and the film-like adhesive can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 This is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0040] Figure 2 for Figure 1 A top view of a wafer for manufacturing a semiconductor device is shown.

[0041] Figure 3A This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention.

[0042] Figure 3B This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention.

[0043] Figure 3CThis is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention.

[0044] Figure 4A A cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0045] Figure 4B A cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0046] Figure 4C A cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0047] Figure 5A This is a cross-sectional view schematically illustrating another example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention.

[0048] Figure 5B This is a cross-sectional view schematically illustrating another example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention.

[0049] Figure 5C This is a cross-sectional view schematically illustrating another example of a method for manufacturing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] ◇Sheets for semiconductor device manufacturing

[0051] A sheet for manufacturing a semiconductor device according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, wherein the sheet for manufacturing a semiconductor device is formed by sequentially stacking the adhesive layer, the intermediate layer, and the film-like adhesive on the substrate, wherein the intermediate layer contains a non-silicone resin (β1) having a weight-average molecular weight of 20,000 to 100,000 (sometimes referred to as "non-silicone resin (β1)" in this specification) as a main component, and further, at least the film-like adhesive contains a component (α2) or at least the adhesive layer contains a component (γ2), wherein the component (α2) is liquid at a temperature of 23°C and has no adhesion to the film-like adhesive. The component (γ2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer. The haze of a first test piece with a thickness of 10 μm and composed of the non-silicone resin (β1) is set to H(β). When the film-like adhesive contains the component (α2), the haze of a second test piece with a thickness of 10 μm and composed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is set to H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0052] (X1)H(βα)-H(β)>7%,

[0053] When the adhesive layer contains the component (γ2), the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0054] (X2)H(βγ)-H(β)>7%.

[0055] As the sheet for manufacturing semiconductor devices according to this embodiment, the following can be listed: a sheet for manufacturing semiconductor devices, wherein the intermediate layer contains the non-silicone resin (β1) as the main component, the film-like adhesive contains the component (α2), and the adhesive layer does not contain the component (γ2); a sheet for manufacturing semiconductor devices, wherein the intermediate layer contains the non-silicone resin (β1) as the main component, the adhesive layer contains the component (γ2), and the film-like adhesive does not contain the component (α2); a sheet for manufacturing semiconductor devices, wherein the intermediate layer contains the non-silicone resin (β1) as the main component, the film-like adhesive contains the component (α2), and the adhesive layer contains the component (γ2).

[0056] Furthermore, in the sheet for manufacturing a semiconductor device of this embodiment, when the film adhesive contains the component (α2), H(βα) and H(β) satisfy the formula (X1), regardless of whether the adhesive layer contains the component (γ2). In this sheet for manufacturing a semiconductor device, it can be determined that the compatibility of the component (α2) with the non-silicone resin (β1) is low, and the migration of the component (α2) in the film adhesive to the intermediate layer is suppressed, resulting in the suppression of the migration of the component (α2) in the film adhesive to the adhesive layer.

[0057] On the other hand, in the sheet for manufacturing a semiconductor device of this embodiment, when the adhesive layer contains the component (γ2), H(βγ) and H(β) satisfy the formula (X2), regardless of whether the film adhesive contains the component (α2). In this sheet for manufacturing a semiconductor device, it can be determined that the compatibility of the component (γ2) with the non-silicone resin (β1) is low, and the migration of the component (γ2) in the adhesive layer to the intermediate layer is suppressed, resulting in the suppression of the migration of the component (γ2) in the adhesive layer to the film adhesive.

[0058] That is, in the sheet for manufacturing a semiconductor device of the present embodiment, the intermediate layer functions as a layer for suppressing the migration of the component (α2) and the component (γ2).

[0059] The effect of suppressing the migration of the component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer in the sheet for producing a semiconductor device of the present embodiment can be confirmed by, for example, the following method.

[0060] That is, a semiconductor device manufacturing sheet is left to stand for a certain period of time under high temperature conditions, and after a period of time, the semiconductor device manufacturing sheet after the period of time is used and, by the method described below, a semiconductor chip group with a film-like adhesive (for example, a silicon chip group with a film-like adhesive) is produced in the following state, that is, a state in which a plurality of semiconductor chips with a film-like adhesive are arranged and fixed on an intermediate layer in a laminated sheet via the film-like adhesive therein. Here, a "laminated sheet" is a laminate having a structure in which a substrate, an adhesive layer, and an intermediate layer are sequentially stacked along the thickness direction thereof. Furthermore, the force required to peel the semiconductor chip with a film-like adhesive from the intermediate layer in the laminated sheet is measured, and this force is used as the pickup force of the semiconductor chip with a film-like adhesive after a period of time.

[0061] On the other hand, using a sheet for manufacturing semiconductor devices that has not been subjected to a period of time (before a period of time has passed), the force required to peel off the semiconductor chip with the film-like adhesive from the intermediate layer in the laminated sheet is measured by the same method, and this force is used as the picking force of the semiconductor chip with the film-like adhesive before a period of time has passed.

[0062] Furthermore, when no difference is confirmed between the pickup force of the semiconductor chip with the film-like adhesive after a period of time and the pickup force before a period of time, or even if a difference is confirmed but its degree is extremely slight, it can be judged that the composition of the film-like adhesive of the sheet for manufacturing semiconductor devices does not change significantly even after a period of time, and it can be judged that the sheet for manufacturing semiconductor devices has the effect of inhibiting the transfer of component (α2) in the film-like adhesive to the adhesive layer.

[0063] In the semiconductor device manufacturing sheet of the present embodiment, when the component (γ2) is an antistatic agent, for example, the effect of suppressing the transfer of the component (γ2) in the adhesive layer to the film-like adhesive can be confirmed by the following method.

[0064] Specifically, a sheet for manufacturing a semiconductor device is stored under high temperature conditions for a predetermined period of time using the same method as described above. After the predetermined period of time, the film adhesive is peeled from the intermediate layer of the sheet to prepare a test piece of the film adhesive. This test piece is then conditioned by storing it for a predetermined period of time at a constant temperature and relative humidity (e.g., 23°C and 50% relative humidity). The surface resistivity of the exposed surface of the film adhesive, which was once the intermediate layer, is then measured after the conditioning. This value is used as the surface resistivity of the film adhesive after the predetermined period of time.

[0065] On the other hand, using a sheet for semiconductor device manufacturing that has not yet passed (before a period of time has passed), the surface resistivity of the exposed surface of the film adhesive that was once the intermediate layer side is measured by the same method, and this value is adopted as the surface resistivity of the film adhesive before the period of time has passed.

[0066] Furthermore, when no difference (more specifically, a decrease) is confirmed between the surface resistivity of the film adhesive after a period of time and the surface resistivity before a period of time, or even if a difference is confirmed but its degree is extremely slight, it can be judged that the composition of the adhesive layer containing the antistatic agent in the sheet for manufacturing semiconductor devices does not change significantly even after a period of time, and it can be judged that the sheet for manufacturing semiconductor devices has the effect of inhibiting the transfer of component (γ2) in the adhesive layer to the film adhesive.

[0067] When component (γ2) is a component other than an antistatic agent, for example, if no difference is confirmed in the physical properties of the adhesive layer containing the component due to whether the adhesive layer has passed a period of time, or even if a difference is confirmed, the degree is extremely slight, it can be judged that the sheet for manufacturing semiconductor devices has the effect of inhibiting the transfer of component (γ2) in the adhesive layer to the film-like adhesive.

[0068] In this specification, the term "main component" is not limited to the non-silicone resin (β1) in the intermediate layer described above, but refers to the component having the largest content (parts by mass) and a weight-average molecular weight of 20,000 or greater in the layer (film) containing the component. For example, in the intermediate layer, the non-silicone resin (β1) has the largest content (parts by mass) of all the components, and the non-silicone resin (β1) has a weight-average molecular weight of 20,000 or greater.

[0069] In this specification, components that are liquid at a temperature of 23° C., such as the component (α2) and the component (γ2), may be collectively referred to simply as “liquid components”.

[0070] The first test piece, the second test piece, and the third test piece are all in the form of a film with a thickness of 10 μm. For example, as long as the haze can be measured, there is no particular limitation on the overall shape.

[0071] In this specification, “thickness” refers to the average value of thickness measured at five randomly selected locations on the object, not limited to the first to third test pieces, unless otherwise specified, and can be obtained using a constant pressure thickness gauge in accordance with JIS K7130.

[0072] The H(β), H(βα), and H(βγ) can all be measured in accordance with JIS K 7136:2000.

[0073] As long as the above-mentioned formulas (X1) and (X2) are satisfied, the above-mentioned H(β) is not particularly limited.

[0074] For example, from the viewpoint of easier formation of the intermediate layer, H(β) may be in any of the ranges of 0.1 to 20%, 1 to 18%, and 2 to 15%.

[0075] The first test piece can be produced by preparing a first test composition containing the non-silicone resin (β1) and a solvent, applying the first test composition to the surface to be formed on the first test piece, and drying the composition. The surface to be formed on the first test piece can be, for example, a release-treated surface of a release film.

[0076] The first test piece is composed of a non-silicone resin (β1). The first test piece may contain only the non-silicone resin (β1) as its constituent component, or may contain impurities in addition to the non-silicone resin (β1), but the amount of the impurities is so small as not to alter the physical properties of the first test piece, and the first test piece may be considered to contain substantially only the non-silicone resin (β1). For example, the content of the non-silicone resin (β1) in the first test piece may be 99% by mass or greater relative to the total mass of the first test piece.

[0077] As long as the above formula (X1) is satisfied, the above H(βα) is not particularly limited.

[0078] For example, from the viewpoint of easier formation of the intermediate layer and the film-like adhesive, H(βα) may be in any of the ranges of 8 to 80%, 10 to 75%, and 12 to 70%.

[0079] The second test piece can be produced by preparing a second test composition containing the non-silicone resin (β1), the component (α2), and a solvent, applying the second test composition to the surface to be formed on the second test piece, and drying the composition. The surface to be formed on the second test piece is the same as the surface to be formed on the first test piece.

[0080] The second test composition preferably has its components uniformly mixed. This allows for the preparation of a second test piece in which the components are uniformly mixed, enabling the measurement of H(βα) with higher accuracy. To this end, when preparing the second test composition, the mixture of all components can be thoroughly stirred using a known method.

[0081] The second test piece is composed of a mixture of 100 parts by mass of a non-silicone resin (β1) and 10 parts by mass of a component (α2). The second test piece contains only the non-silicone resin (β1) and the component (α2) as its constituent components, or, although it contains impurities in addition to the non-silicone resin (β1) and the component (α2), the content of the impurities is a trace amount to the extent that it does not change the physical properties of the second test piece, and it can be considered to contain substantially only the non-silicone resin (β1) and the component (α2). For example, in the second test piece, the total content of the non-silicone resin (β1) and the component (α2) relative to the total mass of the second test piece can be 99% by mass or more.

[0082] As long as the above formula (X2) is satisfied, the above H(βγ) is not particularly limited.

[0083] For example, from the viewpoint of easier formation of the intermediate layer and the adhesive layer, H(βγ) may be in any of the ranges of 8 to 80%, 10 to 75%, and 12 to 70%.

[0084] The third test piece can be prepared by preparing a third test composition containing the non-silicone resin (β1), the component (γ2), and a solvent, applying the third test composition to a surface to be formed on the third test piece, and drying the composition. The surface to be formed on the third test piece is the same as the surface to be formed on the first test piece.

[0085] The third test composition preferably has its components uniformly mixed. This allows for the preparation of a third test piece in which the components are uniformly mixed, enabling the measurement of H(βγ) with higher accuracy. To this end, when preparing the third test composition, the mixture obtained by blending all the components can be thoroughly stirred using a known method.

[0086] The third test piece is composed of a mixture of 100 parts by mass of a non-silicone resin (β1) and 10 parts by mass of a component (γ2). The third test piece contains only the non-silicone resin (β1) and the component (γ2) as its constituent components, or, although it contains impurities in addition to the non-silicone resin (β1) and the component (γ2), the content of the impurities is a trace amount to the extent that the physical properties of the third test piece are not changed, and it can be considered that it substantially contains only the non-silicone resin (β1) and the component (γ2). For example, in the third test piece, the total content of the non-silicone resin (β1) and the component (γ2) relative to the total mass of the third test piece can be 99% by mass or more.

[0087] The H(βα)-H(β) may be greater than 7%, but is preferably greater than 7.5% from the viewpoint of further suppressing the migration of the component (α2) in the film adhesive to the adhesive layer, and may be, for example, within the range of 9% or greater and 11% or greater.

[0088] The upper limit of H(βα)-H(β) is not particularly limited. From the viewpoint of easily forming a film-like adhesive and an intermediate layer satisfying the formula (X1), H(βα)-H(β) is preferably 90% or less.

[0089] For example, H(βα)-H(β) is preferably greater than 7% and less than 90% (7%<H(βα)-H(β)≤90%), and H(βα)-H(β) can be any range of 7.5~90%, 9~90% and 11~90%.

[0090] The H(βγ)-H(β) may be greater than 7%, and is preferably 7.5% or greater from the viewpoint of further suppressing the transfer of the component (γ2) in the adhesive layer to the film adhesive. For example, it may be in any range of 9% or greater and 11% or greater.

[0091] The upper limit of H(βγ)-H(β) is not particularly limited. From the viewpoint of easily forming an adhesive layer and an intermediate layer satisfying the above formula (X2), H(βγ)-H(β) is preferably 90% or less.

[0092] For example, H(βγ)-H(β) is preferably greater than 7% and less than 90% (7%<H(βγ)-H(β)≤90%), and H(βγ)-H(β) can be any range of 7.5~90%, 9~90% and 11~90%.

[0093] When the semiconductor device manufacturing sheet of this embodiment is used as a wafer for dicing solid wafers and is subjected to blade dicing, the presence of the intermediate layer in the sheet makes it easy to prevent the blade from reaching the substrate, thereby suppressing the generation of whisker-like chips (also known as whiskers, hereinafter referred to as "chips" rather than just chips generated from the substrate) from the substrate. Furthermore, by making the primary component of the intermediate layer cut by the blade a non-silicone resin (β1) having a weight-average molecular weight of 20,000 to 100,000, particularly by making the weight-average molecular weight of 100,000 or less, the generation of chips from the intermediate layer can be further suppressed.

[0094] On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a solid wafer to perform cutting (Stealth Dicing (registered trademark)) accompanied by the formation of a modified layer in the semiconductor wafer, since the semiconductor device manufacturing sheet has the intermediate layer, the semiconductor device manufacturing sheet can be stretched in a direction parallel to its surface (for example, the surface of the film adhesive attached to the semiconductor chip), that is, so-called expanded, thereby cutting the film adhesive at the target location with good precision and suppressing poor cutting.

[0095] In this way, the semiconductor device manufacturing sheet of this embodiment can be given the characteristic of suppressing the occurrence of adverse conditions when splitting semiconductor wafers in a manner that suppresses the generation of cutting chips from the substrate and the intermediate layer when blade cutting is performed, and suppresses the poor cutting of the film adhesive when the expansion is performed, thereby making the semiconductor wafer splitting suitability excellent.

[0096] In this specification, unless otherwise specified, the "weight average molecular weight" is a polystyrene-equivalent value measured by gel permeation chromatography (GPC).

[0097] Hereinafter, a method of using the semiconductor device manufacturing sheet according to this embodiment will be described in detail.

[0098] Hereinafter, the semiconductor device manufacturing sheet of this embodiment will be described in detail with reference to the accompanying drawings. In addition, in order to facilitate understanding of the features of the present invention, for convenience, important portions of the drawings used in the following description may sometimes be enlarged and displayed, and the dimensional ratios of the various components may not necessarily be the same as the actual ones.

[0099] Figure 1 This is a cross-sectional view schematically showing a semiconductor device manufacturing sheet according to one embodiment of the present invention. Figure 2 for Figure 1 A top view of a wafer for manufacturing a semiconductor device is shown.

[0100] In addition, Figure 2In the subsequent drawings, the same components as those shown in the already described drawings are denoted by the same reference numerals as those in the already described drawings, and detailed description thereof is omitted.

[0101] The semiconductor device manufacturing sheet 101 shown here comprises a substrate 11, and an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 laminated in this order on the substrate 11. The semiconductor device manufacturing sheet 101 further comprises a release film 15 on a surface 14a of the film-like adhesive 14 opposite to the side on which the intermediate layer 13 is provided (hereinafter sometimes referred to as the "first surface") .

[0102] In a sheet 101 for manufacturing a semiconductor device, an adhesive layer 12 is provided on one surface 11a of a substrate 11 (sometimes referred to as the "first surface" in this specification), an intermediate layer 13 is provided on the surface 12a of the adhesive layer 12 opposite to the surface on which the substrate 11 is provided (sometimes referred to as the "first surface" in this specification), a film adhesive 14 is provided on the surface 13a of the intermediate layer 13 opposite to the surface on which the adhesive layer 12 is provided (sometimes referred to as the "first surface" in this specification), and a release film 15 is provided on the first surface 14a of the film adhesive 14. Thus, the sheet 101 for manufacturing a semiconductor device is constructed by laminating the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film adhesive 14 in this order in the thickness direction.

[0103] The semiconductor device manufacturing sheet 101 is used as follows: with the release film 15 removed, the first surface 14a of the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the back surface of a semiconductor wafer, a semiconductor chip, or an incompletely divided semiconductor wafer (not shown).

[0104] In this specification, regardless of whether it is a semiconductor wafer or a semiconductor chip, the surface on which a circuit is formed is referred to as a "circuit-formed surface," and the surface opposite to the circuit-formed surface is referred to as a "back surface."

[0105] In this specification, a laminate having a structure in which a base material and an adhesive layer are laminated in the thickness direction thereof and no intermediate layer is laminated is sometimes referred to as a "support sheet". Figure 1 , reference numeral 1 denotes a supporting sheet.

[0106] In addition, a laminate having a structure in which a base material, an adhesive layer, and an intermediate layer are sequentially laminated in the thickness direction thereof is sometimes referred to as a "laminated sheet". Figure 1 In the figure, a laminated sheet is indicated by reference numeral 10. The laminated body of the support sheet and the intermediate layer is included in the laminated sheet.

[0107] When looking down at the intermediate layer 13 and the film-like adhesive 14 from above, the planar shapes of the intermediate layer 13 and the film-like adhesive 14 are both circular, and the diameter of the intermediate layer 13 is the same as that of the film-like adhesive 14 .

[0108] In the semiconductor device manufacturing sheet 101 , the intermediate layer 13 and the film adhesive 14 are arranged so that their centers coincide with each other. In other words, the positions of their outer peripheries coincide with each other in their radial directions.

[0109] The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 are both smaller in area than the first surface 12a of the pressure-sensitive adhesive layer 12. 13 The maximum value (ie, diameter) and the width W of the film adhesive 14 14 The maximum value (i.e., diameter) of each of the adhesive layer 12 and the substrate 11 is smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. The release film 15 is in direct contact with and laminated on the area of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated. When the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may be referred to as a "non-laminated area").

[0110] In addition, in the semiconductor device manufacturing sheet 101 having the release film 15, there may be an area where the release film 15 is not laminated on the area of the adhesive layer 12 not covered by the intermediate layer 13 and the film adhesive 14 as shown here, or there may be no area where the release film 15 is not laminated.

[0111] The semiconductor device manufacturing sheet 101, which is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14 without being cut, can be secured by attaching a portion of the non-laminated region of the adhesive layer 12 to a jig, such as a ring frame, used to secure the semiconductor wafer. Therefore, there is no need to provide a separate jig adhesive layer on the semiconductor device manufacturing sheet 101 to secure the semiconductor device manufacturing sheet 101 to the jig. Furthermore, since no jig adhesive layer is required, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

[0112] Although the semiconductor device manufacturing sheet 101 exhibits excellent effects without a jig adhesive layer as described above, it may also include a jig adhesive layer. In this case, the jig adhesive layer is provided in an area near the periphery of the surface of any layer constituting the semiconductor device manufacturing sheet 101. Examples of such areas include the non-laminated area on the first surface 12a of the adhesive layer 12.

[0113] The jig adhesive layer may be a known jig adhesive layer, and may be, for example, a single layer structure containing an adhesive component, or a multilayer structure in which layers containing an adhesive component are laminated on both surfaces of a core sheet.

[0114] Furthermore, when the sheet 101 for manufacturing a semiconductor device is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) as described below, i.e., expanded, the sheet 101 for manufacturing a semiconductor device can be easily expanded due to the presence of the non-laminated region on the first surface 12a of the adhesive layer 12. Furthermore, not only can the film-like adhesive 14 be easily cut, but it is also possible to prevent the intermediate layer 13 and the film-like adhesive 14 from peeling off from the adhesive layer 12.

[0115] In the semiconductor device manufacturing sheet 101 , the intermediate layer 13 contains a non-silicone resin (β1) having a weight average molecular weight of 20,000 to 100,000 as a main component.

[0116] The semiconductor device manufacturing sheet of this embodiment is not limited to Figure 1 and Figure 2 The semiconductor device manufacturing sheet shown in the figure can be used for the semiconductor device manufacturing sheet within the range not impairing the effect of the present invention. Figure 1 and Figure 2 Part of the configuration of the semiconductor device manufacturing sheet shown is changed, deleted, or added.

[0117] For example, the semiconductor device manufacturing sheet of this embodiment may also include other layers that do not belong to any of the base material, adhesive layer, intermediate layer, film adhesive, release film, and clamp adhesive layer. However, the semiconductor device manufacturing sheet of this embodiment is preferably as follows Figure 1 As shown, the adhesive layer is provided in direct contact with the substrate, the intermediate layer is provided in direct contact with the adhesive layer, and the film adhesive is provided in direct contact with the intermediate layer.

[0118] For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shape of the intermediate layer and the film-like adhesive can be a shape other than a circle, and the planar shapes of the intermediate layer and the film-like adhesive can be the same or different from each other. In addition, it is preferred that the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both smaller than the area of the surface of the layer closer to the substrate side (for example, the first surface of the adhesive layer), and the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive can be the same or different from each other. In addition, the positions of the outer peripheries of the intermediate layer and the film-like adhesive can be consistent or inconsistent in their radial directions.

[0119] Next, each layer constituting the semiconductor device manufacturing sheet according to this embodiment will be described in more detail.

[0120] ○Base material

[0121] The substrate is in sheet or film form.

[0122] The constituent material of the substrate is preferably various resins, and specific examples include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated products, modified products, cross-linked products or copolymers of any of the above resins, etc.

[0123] In this specification, "(meth)acrylic acid" is a concept encompassing both "acrylic acid" and "methacrylic acid." Terms similar to (meth)acrylic acid are also used in the same manner. For example, "(meth)acrylate" is a concept encompassing both "acrylate" and "methyl acrylate," and "(meth)acryloyl" is a concept encompassing both "acryloyl" and "methacryloyl."

[0124] The resin constituting the substrate may be one type or two or more types. When two or more types are used, the combination and ratio thereof can be arbitrarily selected.

[0125] The substrate can be composed of one layer (single layer) or more than two layers. When the substrate is composed of multiple layers, these multiple layers can be the same as or different from each other. As long as the effect of the present invention is not damaged, the combination of these multiple layers is not particularly limited.

[0126] In this specification, not limited to the base material, "multiple layers may be the same as or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same", and further, "multiple layers may be different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

[0127] The thickness of the substrate can be appropriately selected depending on the intended purpose, but is preferably 50 to 300 μm, more preferably 60 to 150 μm. By setting the thickness of the substrate to be above the lower limit, the structure of the substrate becomes more stable. By setting the thickness of the substrate to be below the upper limit, the film adhesive can be more easily cut during blade dicing and expansion of the semiconductor device manufacturing sheet (film adhesive).

[0128] Here, the “thickness of the substrate” refers to the thickness of the entire substrate. For example, the thickness of a substrate composed of multiple layers refers to the total thickness of all layers constituting the substrate.

[0129] In order to improve the adhesion between the substrate and other layers such as the adhesive layer provided on the substrate, the surface of the substrate may be subjected to a concave-convex treatment based on sandblasting, solvent treatment, embossing treatment, etc.; an oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc.

[0130] The surface of the substrate may be subjected to a primer treatment.

[0131] The substrate may also have an antistatic coating, a layer that prevents the substrate from adhering to other sheets or to a suction table when the solid wafer is stacked and stored, and the like.

[0132] In addition to the main constituent materials such as the resin, the base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0133] The optical properties of the substrate are not particularly limited as long as the effects of the present invention are not impaired. The substrate may be, for example, a substrate that transmits laser light or energy rays.

[0134] The substrate can be produced by a known method. For example, a substrate containing a resin (using a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.

[0135] ○Adhesive layer

[0136] The adhesive layer is in sheet or film form and contains an adhesive as a main component. The weight average molecular weight of the adhesive as the main component is greater than 20,000. The component with the largest content (parts by mass) in the adhesive layer is the adhesive as the main component.

[0137] In addition to the adhesive, the adhesive layer may contain the component (γ2), but may not contain the component (γ2). As the main component (adhesive), the adhesive layer may contain the component (γ1) that is solid at a temperature of 23°C, but may not contain the component (γ1). When the component (γ1) is the main component (adhesive), the weight average molecular weight of the component (γ1) is 20,000 or more, and the component with the largest content (parts by mass) in the adhesive layer is the component (γ1).

[0138] The adhesive layer preferably contains the component (γ1), may contain both the component (γ1) and the component (γ2), or may contain the component (γ1) but not the component (γ2).

[0139] The adhesive layer can be formed using an adhesive composition containing the adhesive and, if necessary, the component (γ2). For example, the adhesive layer can be formed at the target site by applying the adhesive composition to the surface to be formed and drying it as needed.

[0140] The content ratio of the components that do not vaporize at room temperature in the adhesive composition is generally the same as the content ratio of the components in the adhesive layer. In this specification, "room temperature" refers to a temperature that is not particularly cooled or heated, that is, a normal temperature, for example, 15 to 25°C.

[0141] In the adhesive layer, the total content of one or two or more components described below in the adhesive layer is not greater than 100% by mass based on the total mass of the adhesive layer.

[0142] Likewise, in the adhesive composition, the total content of one or two or more components described below in the adhesive composition is not greater than 100% by mass relative to the total mass of the adhesive composition.

[0143] The adhesive composition can be applied by a known method, for example, methods using various coaters such as an air knife coater, a blade coater, a rod coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a knife coater, a screen coater, a Meyer rod coater, and a kiss coater.

[0144] The drying conditions of the adhesive composition are not particularly limited. However, when the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, for example, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes.

[0145] Examples of the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin, and acrylic resin is preferred.

[0146] When the adhesive layer contains the component (γ1) as a main component (adhesive), the component (γ1) is preferably an acrylic resin having a structural unit derived from a (meth)acrylate.

[0147] In this specification, the term "adhesive resin" encompasses both adhesive resins and resins having adhesive properties. For example, the adhesive resin includes not only resins that have adhesive properties themselves, but also resins that exhibit adhesive properties through the use of other components such as additives, or resins that exhibit adhesive properties due to the presence of triggers such as heat or water.

[0148] The adhesive layer may be either curable or non-curable, for example, energy-ray curable or non-energy-ray curable. The curable adhesive layer can easily adjust its physical properties before and after curing.

[0149] In this specification, "energy ray" refers to a ray having an energy quantum such as an electromagnetic wave or a charged particle beam. Examples of energy ray include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light lamp, or an LED lamp as an ultraviolet source. Electron beams can be irradiated using an electron beam generated by an electron beam accelerator or the like.

[0150] In this specification, “energy ray-curable” means a property of being cured by irradiation with energy rays, and “non-energy ray-curable” means a property of not being cured even by irradiation with energy rays.

[0151] The adhesive layer may consist of a single layer or two or more layers. When the adhesive layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0152] The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

[0153] Here, the “thickness of the adhesive layer” refers to the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of a plurality of layers refers to the total thickness of all layers constituting the adhesive layer.

[0154] The optical properties of the adhesive layer are not particularly limited as long as the effects of the present invention are not impaired. For example, the adhesive layer may be one that transmits energy rays.

[0155] Next, the adhesive composition will be described.

[0156] <<Adhesive composition>>

[0157] When the adhesive layer is energy-ray-curable, examples of adhesive compositions containing energy-ray-curable adhesives, i.e., energy-ray-curable adhesive compositions, include: adhesive compositions (I-1) containing a non-energy-ray-curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as "adhesive resin (I-1a)") and an energy-ray-curable compound; adhesive compositions (I-2) containing an energy-ray-curable adhesive resin (I-2a) (hereinafter sometimes abbreviated as "adhesive resin (I-2a)") having an unsaturated group introduced into the side chain of the non-energy-ray-curable adhesive resin (I-1a); adhesive compositions (I-3) containing the adhesive resin (I-2a) and an energy-ray-curable compound, etc.

[0158] The adhesive compositions (I-1), (I-2), and (I-3) may each further contain the component (γ2), or may not contain the component (γ2). As the main component (adhesive), the adhesive compositions (I-1), (I-2), and (I-3) may each contain the component (γ1), or may not contain the component (γ1).

[0159] The adhesive compositions (I-1), (I-2) and (I-3) each preferably contain the component (γ1), may contain both the component (γ1) and the component (γ2), or may contain the component (γ1) but not the component (γ2).

[0160] <Adhesive composition (I-1)>

[0161] As described above, the adhesive composition (I-1) contains the non-energy-ray-curable adhesive resin (I-1a) and the energy-ray-curable compound, and may or may not contain the component (γ2) in addition to these components.

[0162] In the adhesive composition (I-1), the adhesive resin (I-1a) or the energy-ray curable compound may be the component (γ1), and the adhesive resin (I-1a) or the energy-ray curable compound may be the main component.

[0163] [Adhesive resin (I-1a)]

[0164] The adhesive resin (I-1a) is preferably an acrylic resin.

[0165] Examples of the acrylic resin include acrylic polymers having at least a structural unit derived from an alkyl (meth)acrylate.

[0166] The acrylic resin may contain only one type of structural unit or two or more types. When there are two or more types, the combination and ratio thereof may be arbitrarily selected.

[0167] The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0168] In the adhesive composition (I-1), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-1).

[0169] [Energy ray curable compound]

[0170] Examples of the energy-ray-curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy-ray-polymerizable unsaturated group and are curable by irradiation with energy rays.

[0171] Examples of monomers in the energy-ray curable compound include polyvalent (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; and epoxy (meth)acrylate.

[0172] Examples of the oligomer in the energy ray-curable compound include oligomers obtained by polymerizing the monomers exemplified above.

[0173] The energy-beam-curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer, because the molecular weight is relatively large and the storage elastic modulus of the adhesive layer is less likely to decrease.

[0174] The energy-ray curable compound contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0175] In the adhesive composition (I-1), the content of the energy ray-curable compound is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass relative to the total mass of the adhesive composition (I-1).

[0176] When an energy-ray curable compound that is liquid at 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is used, the content of the energy-ray curable compound in the adhesive composition (I-1) preferably satisfies the numerical range set separately below.

[0177] [Crosslinking agent]

[0178] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

[0179] The cross-linking agent reacts with the functional group to cross-link the adhesive resins (I-1a), for example.

[0180] Examples of the cross-linking agent include isocyanate cross-linking agents (cross-linking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy cross-linking agents (cross-linking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine cross-linking agents (cross-linking agents having an aziridine group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate cross-linking agents (cross-linking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate cross-linking agents (cross-linking agents having an isocyanuric acid skeleton).

[0181] From the viewpoint of increasing the cohesive force of the adhesive, increasing the adhesive force of the adhesive layer, and from the viewpoint of easy availability, the crosslinking agent is preferably an isocyanate crosslinking agent.

[0182] The cross-linking agent contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0183] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[0184] When a crosslinking agent that is liquid at 23°C and does not have a functional group reactive with the main component contained in the adhesive layer is used, the content of the crosslinking agent in the adhesive composition (I-1) preferably satisfies the numerical range set separately below.

[0185] [Photopolymerization initiator]

[0186] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-1) containing the photopolymerization initiator can fully undergo a curing reaction.

[0187] Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, Acylphosphine oxide compounds; sulfur compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc.

[0188] Furthermore, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, etc., can also be used.

[0189] The photopolymerization initiator contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0190] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[0191] When a photopolymerization initiator that is liquid at 23°C and has no functional group reactive with the main component contained in the adhesive layer is used, the content of the photopolymerization initiator in the adhesive composition (I-1) preferably satisfies the numerical range set separately below.

[0192] [Other additives]

[0193] The adhesive composition (I-1) may contain other additives that are not included in any of the above components within a range that does not impair the effects of the present invention.

[0194] Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, thickeners, reaction retarders, and crosslinking accelerators (catalysts).

[0195] A reaction retarder is a component used, for example, to suppress unintended crosslinking reactions in the adhesive composition (I-1) during storage due to the action of a catalyst mixed into the adhesive composition (I-1). Examples of the reaction retarder include those that form a chelate complex with a chelate corresponding to the catalyst, and more specifically, those having two or more carbonyl groups (-C(=O)-) in one molecule.

[0196] The adhesive composition (I-1) may contain other additives of one kind or of two or more kinds. When the number is two or more, the combination and ratio thereof may be arbitrarily selected.

[0197] The content of other additives in the adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type of additive.

[0198] When using other additives that are liquid at 23°C and do not have a functional group that reacts with the main component contained in the adhesive layer, the content of the other additives in the adhesive composition (I-1) preferably satisfies the numerical range set separately below.

[0199] [Solvent]

[0200] The adhesive composition (I-1) may contain a solvent. By containing a solvent, the coating suitability of the adhesive composition (I-1) on the surface to be coated is improved.

[0201] The solvent is preferably an organic solvent.

[0202] Examples of the organic solvent include ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene; and alcohols such as 1-propanol and 2-propanol.

[0203] [Component (γ2)]

[0204] The component (γ2) in the adhesive composition (I-1) is liquid at a temperature of 23°C. In addition, the component (γ2) does not have a functional group that reacts with the main component contained in the adhesive layer (that is, it does not react with the main component). The component having a functional group that reacts with the main component contained in the adhesive layer and being liquid at a temperature of 23°C reacts with the main component in the adhesive layer, and thus does not transfer from the adhesive layer to the intermediate layer, and as a result, does not transfer to the film-like adhesive. In this embodiment, instead of suppressing the transfer of the component having the functional group and being liquid at a temperature of 23°C from the adhesive layer to the film-like adhesive, the transfer of the component (γ2) that does not have the functional group and is liquid at a temperature of 23°C, which originally could not suppress the transfer from the adhesive layer to the film-like adhesive, from the adhesive layer to the film-like adhesive is suppressed.

[0205] For example, when the main component has a hydroxyl group or an amino group, an isocyanate group can be cited as a functional group that reacts with the main component.

[0206] As long as this condition is met, component (γ2) is not particularly limited and can be arbitrarily selected according to the purpose. Among the components of the adhesive composition (I-1) that do not belong to any one of the adhesive resin (I-1a) and the solvent, that is, among the energy-ray curable compound, crosslinking agent, photopolymerization initiator and other additives, the component that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is component (γ2). The adhesive layer usually does not contain a solvent.

[0207] Preferred examples of the component (γ2) include antistatic agents and tackifiers.

[0208] (Antistatic agent that is liquid at 23°C)

[0209] The antistatic agent that is liquid at a temperature of 23° C. may be a known antistatic agent such as a conductive compound, and is not particularly limited.

[0210] Examples of the antistatic agent include various ionic liquids.

[0211] Examples of the ionic liquid include well-known ionic liquids such as pyrimidinium salts, pyridinium salts, piperidinium salts, pyrrolidinium salts, imidazolium salts, morpholinium salts, sulfonium salts, phosphonium salts, and ammonium salts.

[0212] The component (γ2) contained in the adhesive composition (I-1) may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0213] When the component (γ2) is used, the content of the component (γ2) in the adhesive composition (I-1) and the adhesive layer can be appropriately adjusted according to the type of the component (γ2).

[0214] In the adhesive composition (I-1) and the adhesive layer, the content of component (γ2) is preferably 0.1 to 40 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a). By setting the content below the upper limit, the transfer of component (γ2) in the adhesive layer to the film adhesive is further suppressed. By setting the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0215] In particular, when component (γ2) is an antistatic agent, in the adhesive composition (I-1) and the adhesive layer, the content of component (γ2) (antistatic agent) is preferably 1 to 7 parts by mass, more preferably 1 to 5 parts by mass, relative to 100 parts by mass of the content of the adhesive resin (I-1a). By making the content below the upper limit, the transfer of the component (γ2) in the adhesive layer to the film adhesive is further suppressed, and the excessive use of the component (γ2) is suppressed. By making the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0216] <Adhesive composition (I-2)>

[0217] As described above, the adhesive composition (I-2) contains the energy-ray-curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the non-energy-ray-curable adhesive resin (I-1a).

[0218] In addition to this, the adhesive composition (I-2) may further contain the component (γ2) or may not contain the component (γ2).

[0219] In the adhesive composition (I-2), the adhesive resin (I-2a) may be the component (γ1), and the adhesive resin (I-2a) may be the main component.

[0220] [Adhesive resin (I-2a)]

[0221] The adhesive resin (I-2a) can be obtained, for example, by reacting an unsaturated group-containing compound having an energy-ray-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

[0222] The unsaturated group-containing compound is a compound having, in addition to the energy-ray-polymerizable unsaturated group, a group capable of reacting with a functional group in the adhesive resin (I-1a) to thereby bond to the adhesive resin (I-1a).

[0223] Examples of the energy-beam-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl (ethylene) group, and an allyl (2-propenyl) group, and a (meth)acryloyl group is preferred.

[0224] Examples of the group capable of bonding to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group capable of bonding to a hydroxyl group or an amino group, and a hydroxyl group and an amino group capable of bonding to a carboxyl group or an epoxy group.

[0225] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0226] The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0227] In the adhesive composition (I-2), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass relative to the total mass of the adhesive composition (I-2).

[0228] [Crosslinking agent]

[0229] For example, when the acrylic polymer having a structural unit derived from a functional group-containing monomer, which is the same as that in the adhesive resin (I-1a), is used as the adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0230] Examples of the cross-linking agent in the adhesive composition (I-2) include the same cross-linking agents as those in the adhesive composition (I-1).

[0231] The cross-linking agent contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0232] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0233] When a crosslinking agent that is liquid at 23°C and does not have a functional group reactive with the main component contained in the adhesive layer is used, the content of the crosslinking agent in the adhesive composition (I-2) preferably satisfies the numerical range set separately below.

[0234] [Photopolymerization initiator]

[0235] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-2) containing the photopolymerization initiator can fully undergo a curing reaction.

[0236] Examples of the photopolymerization initiator in the adhesive composition (I-2) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0237] The photopolymerization initiator contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0238] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0239] When a photopolymerization initiator that is liquid at 23°C and has no functional group reactive with the main component contained in the adhesive layer is used, the content of the photopolymerization initiator in the adhesive composition (I-2) preferably satisfies the numerical range set separately below.

[0240] [Other additives, solvents]

[0241] The adhesive composition (I-2) may contain other additives that are not any of the above-mentioned components within a range not impairing the effects of the present invention.

[0242] Furthermore, the adhesive composition (I-2) may contain a solvent for the same purpose as that of the adhesive composition (I-1).

[0243] Examples of the other additives and solvent in the adhesive composition (I-2) include the same additives and solvents as those in the adhesive composition (I-1).

[0244] The adhesive composition (I-2) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When the number of other additives and solvents is two or more, the combination and ratio thereof may be arbitrarily selected.

[0245] The contents of other additives and the solvent in the adhesive composition (I-2) are not particularly limited and may be appropriately selected depending on their types.

[0246] When using other additives that are liquid at 23°C and do not have a functional group that reacts with the main component contained in the adhesive layer, the content of the other additives in the adhesive composition (I-2) preferably satisfies the numerical range set separately below.

[0247] [Component (γ2)]

[0248] The component (γ2) in the adhesive composition (I-2) is liquid at a temperature of 23°C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the adhesive layer (i.e., it does not react with the main component). Similar to the adhesive composition (I-1), when the adhesive composition (I-2) is used, the migration of the component (γ2) from the adhesive layer to the film-like adhesive is also suppressed.

[0249] As long as this condition is met, component (γ2) is not particularly limited and can be arbitrarily selected according to the purpose. Among the components of the adhesive composition (I-2) that are not any of the adhesive resin (I-2a) and the solvent, that is, among the cross-linking agent, photopolymerization initiator, and other additives, the component that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is component (γ2).

[0250] Preferred components (γ2) in the adhesive composition (I-2) include, for example, the same components as the preferred component (γ2) in the adhesive composition (I-1) (antistatic agents, tackifiers, etc.).

[0251] The component (γ2) contained in the adhesive composition (I-2) may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0252] When the component (γ2) is used, the content of the component (γ2) in the adhesive composition (I-2) can be appropriately adjusted depending on the type of the component (γ2).

[0253] In the adhesive composition (I-2) and the adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a). By setting the content below the upper limit, the transfer of component (γ2) in the adhesive layer to the film adhesive is further suppressed. By setting the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0254] In particular, when component (γ2) is an antistatic agent, in the adhesive composition (I-2) and the adhesive layer, the content of component (γ2) (antistatic agent) is preferably 1 to 7 parts by mass, more preferably 1 to 5 parts by mass, relative to 100 parts by mass of the content of the adhesive resin (I-2a). By making the content below the upper limit, the transfer of the component (γ2) in the adhesive layer to the film adhesive is further suppressed, and the excessive use of the component (γ2) is suppressed. By making the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0255] <Adhesive composition (I-3)>

[0256] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable compound.

[0257] In addition to this, the adhesive composition (I-3) may further contain the component (γ2) or may not contain the component (γ2).

[0258] In the adhesive composition (I-3), the adhesive resin (I-2a) or the energy-ray curable compound may be the component (γ1), and the adhesive resin (I-2a) or the energy-ray curable compound may be the main component.

[0259] [Adhesive resin (I-2a)]

[0260] Examples of the adhesive resin (I-2a) in the adhesive composition (I-3) include the same adhesive resins as those mentioned for the adhesive resin (I-2a) in the adhesive composition (I-2).

[0261] The adhesive resin (I-2a) contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0262] In the adhesive composition (I-3), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-3).

[0263] [Energy ray curable compound]

[0264] Examples of the energy-ray-curable compound contained in the adhesive composition (I-3) include monomers and oligomers having an energy-ray-polymerizable unsaturated group and curable by irradiation with energy rays, and examples include the same energy-ray-curable compounds as those contained in the adhesive composition (I-1).

[0265] The energy-ray curable compound contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0266] In the adhesive composition (I-3) and the adhesive layer, the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0267] When an energy-ray curable compound that is liquid at 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is used, the content of the energy-ray curable compound in the adhesive composition (I-3) preferably satisfies the numerical range set separately below.

[0268] [Photopolymerization initiator]

[0269] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-3) containing the photopolymerization initiator can fully undergo a curing reaction.

[0270] Examples of the photopolymerization initiator in the adhesive composition (I-3) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0271] The photopolymerization initiator contained in the adhesive composition (I-3) may be only one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0272] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the energy ray-curable compound.

[0273] When a photopolymerization initiator that is liquid at 23°C and has no functional group reactive with the main component contained in the adhesive layer is used, the content of the photopolymerization initiator in the adhesive composition (I-3) preferably satisfies the numerical range set separately below.

[0274] [Other additives, solvents]

[0275] The adhesive composition (I-3) may contain other additives that are not included in any of the above components within a range that does not impair the effects of the present invention.

[0276] Furthermore, the adhesive composition (I-3) may contain a solvent for the same purpose as that of the adhesive composition (I-1).

[0277] Examples of the other additives and solvent in the adhesive composition (I-3) include the same additives and solvents as those in the adhesive composition (I-1).

[0278] The adhesive composition (I-3) may contain only one type of other additives and solvents, or two or more types of solvents. When the number of the additives and solvents is two or more, the combination and ratio thereof may be arbitrarily selected.

[0279] The contents of other additives and the solvent in the adhesive composition (I-3) are not particularly limited and may be appropriately selected depending on their types.

[0280] When using other additives that are liquid at 23°C and do not have a functional group that reacts with the main component contained in the adhesive layer, the content of the other additives in the adhesive composition (I-3) preferably satisfies the numerical range set separately below.

[0281] [Component (γ2)]

[0282] The component (γ2) in the adhesive composition (I-3) is liquid at a temperature of 23°C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the adhesive layer (i.e., it does not react with the main component). Similar to the adhesive composition (I-1), when the adhesive composition (I-3) is used, the migration of the component (γ2) from the adhesive layer to the film-like adhesive is also suppressed.

[0283] As long as this condition is met, component (γ2) is not particularly limited and can be arbitrarily selected according to the purpose. Among the components of the adhesive composition (I-3) that are not any of the adhesive resin (I-2a) and the solvent, that is, among the energy-ray-curable compound, the photopolymerization initiator, and other additives, the component that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is component (γ2).

[0284] Preferred components (γ2) in the adhesive composition (I-3) include, for example, the same components as the preferred component (γ2) in the adhesive composition (I-1) (antistatic agents, tackifiers, etc.).

[0285] The component (γ2) contained in the adhesive composition (I-3) may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0286] When the component (γ2) is used, the content of the component (γ2) in the adhesive composition (I-3) can be appropriately adjusted depending on the type of the component (γ2).

[0287] In the adhesive composition (I-3) and the adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a). By setting the content below the upper limit, the transfer of component (γ2) in the adhesive layer to the film adhesive is further suppressed. By setting the content above the lower limit, the effect obtained by using component (γ2) becomes even higher.

[0288] In particular, when component (γ2) is an antistatic agent, in the adhesive composition (I-3) and the adhesive layer, the content of component (γ2) (antistatic agent) is preferably 1 to 7 parts by mass, more preferably 1 to 5 parts by mass, relative to 100 parts by mass of the content of the adhesive resin (I-2a). By making the content below the upper limit, the transfer of the component (γ2) in the adhesive layer to the film adhesive is further suppressed, and the excessive use of the component (γ2) is suppressed. By making the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0289] <Adhesive compositions other than adhesive compositions (I-1) to (I-3)>

[0290] So far, the adhesive composition (I-1), the adhesive composition (I-2) and the adhesive composition (I-3) have been mainly described, but the components described as their contained components can also be used in all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

[0291] As adhesive compositions other than the adhesive compositions (I-1) to (I-3), in addition to energy-ray-curable adhesive compositions, non-energy-ray-curable adhesive compositions can be mentioned.

[0292] Examples of non-energy ray-curable adhesive compositions include adhesive compositions (I-4) containing non-energy ray-curable adhesive resins (I-1a) such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins. Preferred are non-energy ray-curable adhesive compositions containing acrylic resins.

[0293] It is preferred that adhesive compositions other than adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, and the content thereof can be set to be the same as that of the adhesive composition (I-1) and the like.

[0294] <Adhesive composition (I-4)>

[0295] Preferred adhesive compositions (I-4) include, for example, adhesive compositions containing the adhesive resin (I-1a) and a crosslinking agent, and may further contain the component (γ2) or may not contain the component (γ2).

[0296] In the adhesive composition (I-4), the adhesive resin (I-1a) may be the component (γ1), and the adhesive resin (I-1a) may be the main component.

[0297] [Adhesive resin (I-1a)]

[0298] Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resins as those mentioned for the adhesive resin (I-1a) in the adhesive composition (I-1).

[0299] The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0300] In the adhesive composition (I-4), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass relative to the total mass of the adhesive composition (I-4).

[0301] [Crosslinking agent]

[0302] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0303] Examples of the cross-linking agent in the adhesive composition (I-4) include the same cross-linking agents as those in the adhesive composition (I-1).

[0304] The cross-linking agent contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be arbitrarily selected.

[0305] In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, per 100 parts by mass of the adhesive resin (I-1a).

[0306] When a crosslinking agent that is liquid at 23°C and does not have a functional group reactive with the main component contained in the adhesive layer is used, the content of the crosslinking agent in the adhesive composition (I-4) preferably satisfies the numerical range set separately below.

[0307] [Other additives, solvents]

[0308] The adhesive composition (I-4) may contain other additives that are not included in any of the above components within a range that does not impair the effects of the present invention.

[0309] Furthermore, the adhesive composition (I-4) may contain a solvent for the same purpose as that of the adhesive composition (I-1).

[0310] Examples of the other additives and solvent in the adhesive composition (I-4) include the same additives and solvents as those in the adhesive composition (I-1).

[0311] The adhesive composition (I-4) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When the number of other additives and solvents is two or more, the combination and ratio thereof can be arbitrarily selected.

[0312] The contents of other additives and the solvent in the adhesive composition (I-4) are not particularly limited and may be appropriately selected depending on their types.

[0313] When using other additives that are liquid at 23°C and do not have a functional group that reacts with the main component contained in the adhesive layer, the content of the other additives in the adhesive composition (I-4) preferably satisfies the numerical range set separately below.

[0314] [Component (γ2)]

[0315] The component (γ2) in the adhesive composition (I-4) is liquid at a temperature of 23°C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the adhesive layer (i.e., it does not react with the main component). Similar to the adhesive composition (I-1), when the adhesive composition (I-4) is used, the migration of the component (γ2) from the adhesive layer to the film-like adhesive is also suppressed.

[0316] As long as this condition is met, component (γ2) is not particularly limited and can be arbitrarily selected according to the purpose. Among the components of the adhesive composition (I-4) that are not the adhesive resin (I-1a) and the solvent, that is, among the cross-linking agent and other additives, the component that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the adhesive layer is component (γ2).

[0317] Preferred components (γ2) in the adhesive composition (I-4) include, for example, the same components as the preferred component (γ2) in the adhesive composition (I-1) (antistatic agents, tackifiers, etc.).

[0318] The component (γ2) contained in the adhesive composition (I-4) may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0319] When the component (γ2) is used, the content of the component (γ2) in the adhesive composition (I-4) can be appropriately adjusted depending on the type of the component (γ2).

[0320] In the adhesive composition (I-4) and the adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive resin (I-1a). By setting the content below the upper limit, the transfer of component (γ2) in the adhesive layer to the film adhesive is further suppressed. By setting the content above the lower limit, the effect obtained by using component (γ2) becomes even higher.

[0321] In particular, when component (γ2) is an antistatic agent, in the adhesive composition (I-4) and the adhesive layer, the content of component (γ2) (antistatic agent) is preferably 1 to 7 parts by mass, more preferably 1 to 5 parts by mass, relative to 100 parts by mass of the content of the adhesive resin (I-1a). By making the content below the upper limit, the transfer of the component (γ2) in the adhesive layer to the film adhesive is further suppressed, and the excessive use of the component (γ2) is suppressed. By making the content above the lower limit, the effect obtained by using component (γ2) becomes higher.

[0322] When component (γ2) is used, regardless of whether the adhesive composition is any of adhesive compositions (I-1) to (I-4), the content of component (γ2) in the adhesive layer is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive.

[0323] In particular, when component (γ2) is an antistatic agent, the content of component (γ2) (antistatic agent) in the adhesive layer is preferably 1 to 7 parts by mass, more preferably 1 to 5 parts by mass, based on 100 parts by mass of the adhesive.

[0324] <<Method for preparing adhesive composition>>

[0325] Adhesive compositions other than adhesive compositions (I-1) to (I-3), adhesive composition (I-4), etc. can be obtained by blending the components used to constitute the adhesive composition, that is, by blending the adhesive and components other than the adhesive as needed.

[0326] The order of adding the components when blending them is not particularly limited, and two or more components may be added simultaneously.

[0327] When a solvent is used, the solvent may be mixed with any blending components other than the solvent to dilute the blending components before use, or the solvent may be mixed with the blending components without diluting the blending components before use.

[0328] When blending, the method for mixing the components is not particularly limited and may be appropriately selected from the following known methods: a method of mixing by rotating a stirring bar or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves, etc.

[0329] The temperature and time for adding and mixing the components are not particularly limited and may be appropriately adjusted as long as the components are not degraded. However, the temperature is preferably 15 to 30°C.

[0330] ○Intermediate layer, intermediate layer forming composition

[0331] The intermediate layer is in a sheet or film shape and contains the non-silicone resin (β1) as a main component.

[0332] The intermediate layer may contain only the non-silicone resin (β1) (composed of the non-silicone resin (β1)), or may contain the non-silicone resin (β1) and components other than the non-silicone resin (β1).

[0333] The intermediate layer can be formed using, for example, an intermediate layer-forming composition containing the non-silicone resin (β1). For example, the intermediate layer can be formed at a desired location by applying the intermediate layer-forming composition to the surface on which the intermediate layer is to be formed and drying it as needed.

[0334] In the intermediate layer, the total content of one or two or more components described below in the intermediate layer is not greater than 100% by mass relative to the total mass of the intermediate layer.

[0335] Likewise, in the intermediate layer forming composition, the total content of one or two or more components described below in the intermediate layer forming composition is not greater than 100% by mass relative to the total mass of the intermediate layer forming composition.

[0336] The intermediate layer forming composition can be applied by the same method as the above-mentioned adhesive composition.

[0337] The drying conditions of the intermediate layer-forming composition are not particularly limited. When the intermediate layer-forming composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 60 to 130° C. for 1 to 6 minutes, for example.

[0338] The weight average molecular weight of the non-silicone resin (β1) is 20,000 to 100,000.

[0339] From the viewpoint of further improving the semiconductor wafer dividing suitability of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicone resin (β1) may be, for example, in any of the ranges of 20,000 to 80,000, 20,000 to 60,000, and 20,000 to 40,000.

[0340] The component with the largest content (parts by mass) in the intermediate layer is the non-silicone resin (β1).

[0341] From the viewpoint of achieving a higher effect brought about by the inclusion of the non-silicone resin (β1) in the intermediate layer, the ratio of the content of the non-silicone resin (β1) to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicone resin (β1) to the total content of all components excluding the solvent in the intermediate layer-forming composition) is preferably 75% by mass or more, more preferably 85% by mass or more, and can be, for example, any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0342] On the other hand, the ratio is 100% by mass or less.

[0343] The non-silicone resin (β1) is not particularly limited as long as it is a resin component having no silicon atoms as constituent atoms and having a weight average molecular weight of 20,000 to 100,000.

[0344] The non-silicone resin (β1) may be, for example, a polar resin having a polar group or a non-polar resin having no polar group.

[0345] For example, the non-silicone resin (β1) is preferably a polar resin from the viewpoint of high solubility in the intermediate layer-forming composition and improved coating suitability of the intermediate layer-forming composition.

[0346] The non-silicone resin (β1) may be, for example, a homopolymer of one monomer (in other words, having only one structural unit), or a copolymer of two or more monomers (in other words, having two or more structural units).

[0347] Examples of the polar group include a carbonyloxy group (—C(═O)—O—) and an oxycarbonyl group (—OC(═O)—).

[0348] The polar resin may have only a structural unit having a polar group, or may have both a structural unit having a polar group and a structural unit not having a polar group.

[0349] Examples of the structural unit having a polar group include a structural unit derived from vinyl acetate.

[0350] Examples of the structural unit having no polar group include a structural unit derived from ethylene.

[0351] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is preferably 45% by mass or less, more preferably 30% by mass or less. The lower the ratio, the greater the effect of inhibiting the migration of the component (α2) in the film-like adhesive to the adhesive layer and the effect of inhibiting the migration of the component (γ2) in the adhesive layer to the film-like adhesive.

[0352] On the other hand, the ratio is preferably 5% by mass or more, more preferably 7.5% by mass or more, and further preferably 10% by mass or more. The higher the ratio, the more pronounced the polar resin's characteristic of having polar groups.

[0353] In the polar resin, the ratio of the mass of the structural units having polar groups to the total mass of all structural units can be appropriately adjusted within a range defined by any combination of the upper and lower limits described above. For example, in one embodiment, the ratio can be in any range of 5-45 mass%, 7.5-45 mass%, 10-45 mass%, 5-30 mass%, 7.5-30 mass%, and 10-30 mass%.

[0354] Examples of the polar resin include ethylene-vinyl acetate copolymers.

[0355] Preferred polar resins include, for example, polar resins in which the ratio of the mass of structural units derived from vinyl acetate relative to the total mass of all structural units in an ethylene-vinyl acetate copolymer (sometimes referred to as "the content of structural units derived from vinyl acetate" in this specification) falls within any of the numerical ranges for the "ratio of the mass of structural units having polar groups" described above. Polar resins in which this ratio is 30% by mass or less are particularly preferred. Specifically, particularly preferred polar resins include, for example, polar resins in which the ratio of the mass of structural units derived from vinyl acetate relative to the total mass of all structural units in an ethylene-vinyl acetate copolymer is 30% by mass or less. In other words, particularly preferred polar resins include, for example, polar resins in which the ratio of the mass of structural units derived from ethylene relative to the total mass of all structural units in an ethylene-vinyl acetate copolymer is 70% by mass or greater.

[0356] Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polyolefins such as polypropylene (PP).

[0357] The non-silicone resin (β1) contained in the intermediate layer-forming composition and the intermediate layer may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof may be arbitrarily selected.

[0358] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or two or more non-silicone resins (β1) as polar resins and no non-silicone resins (β1) as non-polar resins, or may contain one or two or more non-silicone resins (β1) as non-polar resins and no non-silicone resins (β1) as polar resins, or may contain one or two or more non-silicone resins (β1) as polar resins and non-silicone resins (β1) as non-polar resins at the same time.

[0359] It is preferred that the intermediate layer-forming composition and the intermediate layer contain at least a non-silicone resin (β1) as a polar resin.

[0360] The intermediate layer-forming composition and the intermediate layer preferably contain one or more selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins as the non-silicone resin (β1). In the sheet for manufacturing a semiconductor device having such an intermediate layer, when the film-like adhesive contains the component (α2), migration of the component (α2) in the film-like adhesive to the adhesive layer is further suppressed, and when the adhesive layer contains the component (γ2), migration of the component (γ2) in the adhesive layer to the film-like adhesive is further suppressed.

[0361] In the intermediate layer-forming composition and the intermediate layer, the content of the non-silicone resin (β1) as a polar resin relative to the total content of the non-silicone resin (β1) is preferably 80% by mass or more, more preferably 90% by mass or more, and can be, for example, any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By setting the content to be above the lower limit, the effect of using the polar resin can be more significantly achieved.

[0362] On the other hand, the ratio is 100% by mass or less.

[0363] That is, in the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the non-silicone resin (β1) as a non-polar resin to the total content of the non-silicone resin (β1) is preferably 20 mass% or less, more preferably 10 mass% or less, for example, it can be any range of 5 mass% or less, 3 mass% or less and 1 mass% or less.

[0364] On the other hand, the ratio is 0% by mass or more.

[0365] From the viewpoint of good handleability of the composition for forming an intermediate layer, the composition for forming an intermediate layer preferably contains a solvent in addition to the non-silicone resin (β1), and may contain a component (in this specification, sometimes referred to as a solvent) that is neither the non-silicone resin (β1) nor the solvent.

[0366] "additive").

[0367] The intermediate layer may contain only the non-silicone resin (β1), or may contain both the non-silicone resin (β1) and the additive.

[0368] The additive may be any of a resin component (sometimes referred to as “other resin component” in this specification) and a non-resin component.

[0369] Examples of the other resin components include non-silicone resins and silicone resins having a weight average molecular weight (Mw) greater than 100,000 (Mw>100,000).

[0370] The non-silicone resin having a weight average molecular weight of greater than 100,000 is not particularly limited as long as it satisfies the above conditions.

[0371] As will be described later, the intermediate layer containing the silicone resin facilitates pickup of the semiconductor chip with the film-like adhesive.

[0372] The silicone resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

[0373] Preferred silicone resins include, for example, resin components that exhibit a release effect on adhesive components, and more preferably, siloxane resins (also referred to as resin components having a siloxane bond (—Si—O—Si—) or siloxane compounds).

[0374] Examples of the siloxane-based resin include polydialkylsiloxane and the like.

[0375] The alkyl group of the polydialkylsiloxane preferably has 1 to 20 carbon atoms.

[0376] Examples of the polydialkylsiloxane include polydimethylsiloxane.

[0377] The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

[0378] The intermediate layer-forming composition and the intermediate layer may contain only one type of additive or two or more types of additives. When two or more types of additives are contained, the combination and ratio thereof can be arbitrarily selected.

[0379] For example, as the additive, the composition for forming the intermediate layer and the intermediate layer may contain one or two or more resin components and no non-resin components, or may contain one or two or more non-resin components and no resin components, or may contain one or two or more resin components and non-resin components at the same time.

[0380] When the intermediate layer forming composition and the intermediate layer contain the additive, in the intermediate layer, the ratio of the content of the non-silicone resin (β1) to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicone resin (β1) to the total content of all components excluding the solvent in the intermediate layer forming composition) is preferably 90 to 99.99 mass%, for example, it can be any range of 90 to 97.5 mass%, 90 to 95 mass% and 90 to 92.5 mass%, or any range of 92.5 to 99.99 mass%, 95 to 99.99 mass% and 97.5 to 99.99 mass%, or 92.5 to 97.5 mass%.

[0381] When the intermediate layer forming composition and the intermediate layer contain the additive, the ratio of the content of the additive to the total mass of the intermediate layer in the intermediate layer (in other words, the ratio of the content of the additive to the total content of all components excluding the solvent in the intermediate layer forming composition) is preferably 0.01 to 10 mass%, for example, it can be any range of 2.5 to 10 mass%, 5 to 10 mass% and 7.5 to 10 mass%, or it can be any range of 0.01 to 7.5 mass%, 0.01 to 5 mass% and 0.01 to 2.5 mass%, or it can be 2.5 to 7.5 mass%.

[0382] The solvent contained in the composition for forming the intermediate layer is not particularly limited, but preferred solvents include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, etc.

[0383] The intermediate layer-forming composition may contain only one type of solvent or two or more types of solvent. When the solvent is two or more types, the combination and ratio thereof can be arbitrarily selected.

[0384] From the viewpoint of being able to more uniformly mix the components contained in the composition for forming an intermediate layer, the solvent contained in the composition for forming an intermediate layer is preferably tetrahydrofuran or the like.

[0385] The content of the solvent in the intermediate layer forming composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent, for example.

[0386] As described later, from the viewpoint of being able to more easily pick up a semiconductor chip with a film-like adhesive, a preferred intermediate layer may include, for example, an intermediate layer containing an ethylene-vinyl acetate copolymer as the non-silicone resin (β1) and a siloxane compound as the additive, wherein the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicone resin (β1)) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges, and the ratio of the content of the siloxane compound (the additive) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges.

[0387] For example, such an intermediate layer includes an ethylene-vinyl acetate copolymer as the non-silicone resin (β1) and a siloxane compound as the additive, wherein the ethylene-vinyl acetate copolymer content in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the siloxane compound content in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only one example of a preferred intermediate layer.

[0388] A more preferred intermediate layer includes, for example, an ethylene-vinyl acetate copolymer as the non-silicone resin (β1) and a siloxane compound as the additive, wherein the ratio of the mass of the structural units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total mass of all structural units (in other words, the content of the structural units derived from vinyl acetate) is 30% by mass or less, the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only one example of a more preferred intermediate layer.

[0389] The surface of the film-like adhesive layer of the intermediate layer (for example, at the bottom of the sheet for semiconductor device manufacturing) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification). Figure 1 When analyzing the first surface 13a of the intermediate layer 13, the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon (occasionally referred to as "silicon concentration ratio" in this specification) is preferably 1 to 20% on a molar basis. As will be described later, using a sheet for manufacturing semiconductor devices having such an intermediate layer makes it easier to pick up semiconductor chips with a film-like adhesive.

[0390] XPS analysis can be performed as follows: the surface of the film adhesive side of the intermediate layer is the analysis object, and an X-ray photoelectron spectroscopy analyzer is used, with the X-ray irradiation angle set to 45° and the X-ray beam diameter set to Set the output to 4.5W.

[0391] The ratio of the silicon concentration can be calculated using the following formula:

[0392] [Measured value of silicon concentration obtained by XPS analysis (atomic%)] / {[Measured value of carbon concentration obtained by XPS analysis (atomic%)]+[Measured value of oxygen concentration obtained by XPS analysis (atomic%)]+[Measured value of nitrogen concentration obtained by XPS analysis (atomic%)]+[Measured value of silicon concentration obtained by XPS analysis (atomic%)]}×100

[0393] From the perspective of making the above-mentioned effects more significant, for example, based on the molar basis of the element, the ratio of the silicon concentration can be in any range of 4-20%, 8-20% and 12-20%, or in any range of 1-16%, 1-12% and 1-8%, or in any range of 4-16% and 8-12%.

[0394] When performing XPS analysis in the above manner, other elements that are not carbon, oxygen, nitrogen, or silicon may be detected in the surface of the intermediate layer (the surface analyzed by XPS). However, even if these other elements are detected, their concentrations are generally very low. Therefore, when calculating the silicon concentration ratio, the silicon concentration ratio can be calculated with high accuracy simply by using the measured values of the carbon, oxygen, nitrogen, and silicon concentrations.

[0395] The intermediate layer may consist of one layer (single layer) or two or more layers. When consisting of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

[0396] As described above, the first test piece composed of the non-silicone resin (β1) contained in the intermediate layer satisfies the relationship of the formula (X1) and the formula (X2).

[0397] As described above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

[0398] The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer can be 150-160 mm, 200-210 mm, or 300-310 mm. These three numerical ranges correspond to semiconductor wafers having a maximum width of 150 mm, 200 mm, or 300 mm in a direction parallel to the surface of the sheet attached to the semiconductor device manufacturing sheet. However, after the cutting is performed with the formation of the modified layer in the semiconductor wafer as described above, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet (film adhesive), as described later, the plurality of semiconductor chips (semiconductor chip group) after cutting are treated as a whole, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

[0399] In this specification, unless otherwise specified, the "width of the intermediate layer" refers to, for example,

[0400] “Width of the intermediate layer in a direction parallel to the first surface” For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer is the diameter of the circle having the planar shape.

[0401] The same applies to semiconductor wafers. Specifically, the "width of a semiconductor wafer" refers to the width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer attached to the sheet for semiconductor device manufacturing. For example, in the case of a semiconductor wafer with a circular planar shape, the maximum width of the semiconductor wafer is the diameter of the circle representing the planar shape.

[0402] The maximum value of the width of the intermediate layer of 150 to 160 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0403] Likewise, the maximum value of the width of the intermediate layer of 200 to 210 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 200 mm within a range of not more than 10 mm.

[0404] Likewise, the maximum value of the width of the intermediate layer of 300 to 310 mm means that the maximum value is equal to or greater than the width of the semiconductor wafer of 300 mm within a range of not more than 10 mm.

[0405] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0 to 10 mm.

[0406] The thickness of the intermediate layer can be appropriately selected depending on the purpose, but is preferably 5 to 150 μm, more preferably 5 to 120 μm. For example, it can be in any range of 10 to 90 μm and 10 to 60 μm, or in any range of 30 to 120 μm and 60 to 120 μm. By setting the thickness of the intermediate layer to be greater than the lower limit, the structure of the intermediate layer is more stable. By setting the thickness of the intermediate layer to be less than the upper limit, the film adhesive can be more easily cut during blade dicing and during the expansion of the semiconductor device manufacturing sheet (film adhesive).

[0407] Here, the “thickness of the intermediate layer” refers to the thickness of the entire intermediate layer. For example, the thickness of an intermediate layer composed of a plurality of layers refers to the total thickness of all layers constituting the intermediate layer.

[0408] When the interlayer contains the silicone resin, particularly when the compatibility of the silicone resin with the non-silicone resin (β1) as a main component is low, the silicone resin in the interlayer tends to be unevenly distributed on both surfaces (the first surface and the surface opposite to the first surface) of the interlayer and in the vicinity thereof in the sheet for manufacturing semiconductor devices. Furthermore, the stronger this tendency, the easier it is for the film adhesive adjacent to (in direct contact with) the interlayer to peel from the interlayer, making it easier to pick up a semiconductor chip with the film adhesive attached, as described later.

[0409] For example, when comparing intermediate layers that are different only in thickness but identical in composition, the area of the two sides, etc., in addition to the thickness, in these intermediate layers, the ratio (mass %) of the content of silicone resin relative to the total mass of the intermediate layer is the same. However, the content (mass parts) of silicone resin in the intermediate layer with a thicker thickness is more than the content (mass parts) of silicone resin in the intermediate layer with a thinner thickness. Therefore, when silicone resin is easily unevenly present in the intermediate layer as described above, the amount of silicone resin unevenly present on both sides (the first side and the side opposite to the first side) and its vicinity in the intermediate layer with a thicker thickness is greater than that in the intermediate layer with a thinner thickness. Therefore, even without changing the ratio, the pick-up suitability of the semiconductor chip with a film-like adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by thickening the thickness of the intermediate layer in the semiconductor device manufacturing sheet, the semiconductor chip with a film-like adhesive can be picked up more easily.

[0410] The intermediate layer-forming composition can be obtained by blending the respective components constituting the composition.

[0411] The intermediate layer-forming composition can be prepared, for example, by the same method as the method for preparing the adhesive composition described above, except that the types of the blended components are different.

[0412] ○Film adhesive

[0413] The film adhesive has curing properties, preferably thermosetting properties, and preferably pressure-sensitive adhesive properties. The film adhesive having both thermosetting and pressure-sensitive adhesive properties can be attached to various adherends by gently pressing in an uncured state. Alternatively, the film adhesive can be softened by heating and attached to various adherends. The film adhesive is cured to form a highly impact-resistant cured product that maintains sufficient adhesive properties even under harsh conditions of high temperature and high humidity.

[0414] Preferred film-like adhesives include, for example, those containing a polymer component (a) and a thermosetting component (b).

[0415] The film adhesive may contain the component (α2) or not. The component (α2) is a component other than the polymer component (a) and may be the thermosetting component (b) or a component other than the thermosetting component (b).

[0416] The film-like adhesive may contain a component (α1) that is solid at a temperature of 23° C. as the polymer component (a), or may not contain the component (α1).

[0417] The film-like adhesive may contain the polymer component (a) as the main component, or may not contain the component (a).

[0418] The film-like adhesive may contain the component (α1) as the main component, or may not contain the component (α1). When the component (α1) is the main component, the weight average molecular weight of the component (α1) is 20,000 or more, and the component with the largest content (parts by mass) in the film-like adhesive is the component (α1).

[0419] The film-like adhesive preferably contains the component (α1), may contain both the component (α1) and the component (α2), or may contain the component (α1) but not the component (α2).

[0420] When the film-like adhesive contains the component (α1) as a main component, the component (α1) is preferably an acrylic resin having a structural unit derived from a (meth)acrylate.

[0421] The film-like adhesive can be formed using an adhesive composition containing its constituent materials. For example, the film-like adhesive can be formed on the target site by applying the adhesive composition to the surface on which the film-like adhesive is to be formed and drying it as needed.

[0422] The content ratio of the components that do not vaporize at room temperature in the adhesive composition is usually the same as the content ratio of the components in the film-like adhesive.

[0423] In the film-like adhesive, the total content of one or two or more components described below in the film-like adhesive is not greater than 100% by mass based on the total mass of the film-like adhesive.

[0424] Likewise, in the adhesive composition, the total content of one or two or more components described below in the adhesive composition is not greater than 100% by mass relative to the total mass of the adhesive composition.

[0425] The adhesive composition can be applied by the same method as the above-mentioned pressure-sensitive adhesive composition.

[0426] The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes, for example.

[0427] The film adhesive may consist of a single layer or two or more layers. When consisting of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0428] When looking down at the semiconductor device manufacturing sheet from above, the area of the film adhesive (i.e., the area of the first surface) is preferably set to be smaller than the area of the substrate (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface) in a manner close to the area of the semiconductor wafer before segmentation. In this semiconductor device manufacturing sheet, there is an area (i.e., the non-laminated area) on a portion of the first surface of the adhesive layer that is not in contact with the intermediate layer and the film adhesive. As a result, the expansion of the semiconductor device manufacturing sheet (film adhesive) becomes easier, and the force applied to the film adhesive during expansion is not dispersed, so that the film adhesive can be cut more easily.

[0429] As described above, the maximum width of the film-like adhesive is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate.

[0430] The maximum value of the width of the film adhesive relative to the size of the semiconductor wafer may be the same as the maximum value of the width of the intermediate layer described above.

[0431] That is, the maximum width of the film adhesive can be appropriately selected based on the size of the semiconductor wafer. For example, the maximum width of the film adhesive can be 150-160 mm, 200-210 mm, or 300-310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150 mm, 200 mm, or 300 mm in a direction parallel to the surface attached to the semiconductor device manufacturing sheet.

[0432] In this specification, unless otherwise specified, the term "width of a film adhesive" refers to, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive having a circular planar shape, the maximum width of the film adhesive is the diameter of the circle having the planar shape.

[0433] In addition, unless otherwise specified, the "width of the film adhesive" refers to the "width of the film adhesive before cutting (uncut)", and does not refer to the width of the film adhesive after cutting in the manufacturing process of the semiconductor chip with film adhesive described later.

[0434] The maximum width of the film adhesive of 150 to 160 mm means that the maximum width is equal to or greater than the maximum width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0435] Likewise, the maximum width of the film adhesive of 200 to 210 mm means that the maximum width of the semiconductor wafer is equal to or greater than 200 mm within a range of not more than 10 mm.

[0436] Likewise, the maximum width of the film adhesive of 300 to 310 mm means a maximum width equal to or greater than 300 mm of the semiconductor wafer within a range of not more than 10 mm.

[0437] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm.

[0438] In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film-like adhesive may both be within any of the above numerical ranges.

[0439] That is, as an example of the semiconductor device manufacturing sheet of this embodiment, a semiconductor device manufacturing sheet in which the maximum width of the intermediate layer and the maximum width of the film adhesive are both 150-160 mm, 200-210 mm, or 300-310 mm can be listed.

[0440] The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. By making the thickness of the film adhesive above the lower limit, a higher adhesive force to the adherend (semiconductor chip) can be obtained. By making the thickness of the film adhesive below the upper limit, the film adhesive can be more easily cut during blade dicing and during the expansion of the semiconductor device manufacturing sheet (film adhesive).

[0441] Here, the “thickness of the film adhesive” refers to the thickness of the entire film adhesive. For example, the thickness of a film adhesive composed of multiple layers refers to the total thickness of all layers constituting the film adhesive.

[0442] Next, the adhesive composition will be described.

[0443] <<Adhesive composition>>

[0444] Preferred examples of adhesive compositions include adhesive compositions containing a polymer component (a) and a thermosetting component (b).

[0445] The adhesive composition may or may not contain the component (α2) in addition to the polymer component (a) and the thermosetting component (b).

[0446] In the adhesive composition, the polymer component (a) may be the component (α1), and the polymer component (a) may be a main component.

[0447] Hereinafter, each component in the adhesive composition and the film-like adhesive will be described.

[0448] The adhesive composition shown below is merely an example of a preferred adhesive composition, and the adhesive composition in this embodiment is not limited to the adhesive composition shown below.

[0449] [Polymer component (a)]

[0450] The polymer component (a) can be considered a component formed by a polymerization reaction of a polymerizable compound. It is a polymer compound used to impart film-forming properties, such as film-forming properties and flexibility, to the film adhesive while also improving adhesion (in other words, adhesion) to the adhesive object, such as a semiconductor chip. The polymer component (a) has thermoplastic properties and does not have thermosetting properties. In this specification, the polymer compound also includes products of polycondensation reactions.

[0451] The polymer component (a) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0452] Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins.

[0453] Among them, the polymer component (a) is preferably an acrylic resin.

[0454] In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components excluding the solvent (i.e., the ratio of the content of the polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 to 75% by mass, more preferably 30 to 65% by mass.

[0455] [Thermosetting component (b)]

[0456] The thermosetting component (b) is a component having thermosetting properties and used to thermally cure the film-like adhesive.

[0457] The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0458] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.

[0459] Among them, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0460] ○Epoxy thermosetting resin

[0461] The epoxy thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2).

[0462] The epoxy thermosetting resin contained in the adhesive composition and the film adhesive may be one type or two or more types. When two or more types are used, the combination and ratio thereof may be arbitrarily selected.

[0463] Epoxy resin (b1)

[0464] As the epoxy resin (b1), known epoxy resins can be listed, for example, epoxy compounds with two or more functionalities such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydride, o-cresol novolac epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin.

[0465] As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The compatibility of epoxy resins having an unsaturated hydrocarbon group with acrylic resins is higher than the compatibility of epoxy resins without an unsaturated hydrocarbon group with acrylic resins. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the semiconductor package obtained using the film adhesive is improved.

[0466] The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0467] Thermal curing agent (b2)

[0468] The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

[0469] Examples of the thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydriding acid groups. Phenolic hydroxyl groups, amino groups, or groups formed by anhydriding acid groups are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0470] Examples of the phenolic curing agent having a phenolic hydroxyl group in the thermosetting agent (b2) include polyfunctional phenol resins, biphenol, novolac-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins.

[0471] Examples of the amine curing agent having an amino group in the thermosetting agent (b2) include dicyandiamide (DICY) and the like.

[0472] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0473] The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0474] In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1), for example, it can be any range of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By making the content of the thermosetting agent (b2) above the lower limit, it is easier to cure the film adhesive. By making the content of the thermosetting agent (b2) below the upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further increased.

[0475] In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (for example, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, relative to 100 parts by mass of the polymer component (a). For example, it can be in the range of 5 to 35 parts by mass or 5 to 20 parts by mass. By setting the content of the thermosetting component (b) within the above range, the peeling force between the intermediate layer and the film-like adhesive is further stabilized.

[0476] When using a thermosetting component (b) (for example, either or both of an epoxy resin (b1) and a thermosetting agent (b2)) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferred that the content of the thermosetting component (b) in the adhesive composition and the film-like adhesive satisfies the numerical range set separately below.

[0477] In order to improve various physical properties of the film adhesive, the adhesive composition and the film adhesive may further contain other components other than the polymer component (a) and the thermosetting component (b) as needed in addition to the polymer component (a) and the thermosetting component (b).

[0478] Preferred components among other components contained in the adhesive composition and the film-like adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy-ray-curable resin (g), a photopolymerization initiator (h), and a general additive (i).

[0479] [Curing accelerator (c)]

[0480] The curing accelerator (c) is a component for adjusting the curing speed of the adhesive composition.

[0481] Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphoniumtetraphenylborate and triphenylphosphinetetraphenylborate.

[0482] The adhesive composition and the film-like adhesive may contain only one type of curing accelerator (c), or two or more types. When two or more types are used, the combination and ratio thereof can be arbitrarily selected.

[0483] When using a curing accelerator (c), in the adhesive composition and the film adhesive, the content of the curing accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (b). By making the content of the curing accelerator (c) more than the lower limit, the effect of using the curing accelerator (c) can be more significantly obtained. By making the content of the curing accelerator (c) less than the upper limit, for example, the effect of suppressing the high-polarity curing accelerator (c) from moving to the bonding surface side with the adherend in the film adhesive under high temperature and high humidity conditions and segregating becomes higher, and the reliability of the package obtained using the film adhesive is further increased.

[0484] When using a curing accelerator (c) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferred that the content of the curing accelerator (c) in the adhesive composition and the film-like adhesive satisfies the numerical range set separately below.

[0485] [Filling material (d)]

[0486] By including a filler (d) in the film adhesive, the film adhesive's shearing properties due to expansion are further enhanced. Furthermore, by including a filler (d) in the film adhesive, the film adhesive's coefficient of thermal expansion is easily adjusted. By optimizing the coefficient of thermal expansion for the object to which the film adhesive is attached, the reliability of the package obtained using the film adhesive is further enhanced. Furthermore, by including a filler (d) in the film adhesive, the moisture absorption rate of the cured film adhesive can be reduced or its heat dissipation properties can be improved.

[0487] The filler (d) may be any of an organic filler and an inorganic filler, and is preferably an inorganic filler.

[0488] Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by sphericalizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc.

[0489] Among them, the inorganic filler is preferably silica or alumina.

[0490] The filler (d) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0491] When a filler (d) is used, the ratio of the content of the filler (d) to the total content of all components excluding the solvent in the adhesive composition (i.e., the ratio of the content of the filler (d) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. By setting the ratio within the above range, the effect of using the filler (d) can be more significantly achieved.

[0492] [Coupling agent (e)]

[0493] By including a coupling agent (e) in the film adhesive, the adhesiveness and adhesion of the film adhesive to the adherend are improved. In addition, by including a coupling agent (e) in the film adhesive, the water resistance of the cured product of the film adhesive is improved without compromising heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

[0494] The coupling agent (e) is preferably a compound having a functional group that can react with a functional group possessed by the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

[0495] The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0496] When a coupling agent (e) is used, the content of the coupling agent (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b) in the adhesive composition and the film adhesive. By making the content of the coupling agent (e) above the lower limit, the effects of using the coupling agent (e), such as improving the dispersibility of the filler (d) in the resin and improving the adhesion between the film adhesive and the adherend, can be more significantly obtained. By making the content of the coupling agent (e) below the upper limit, the generation of outgassing can be further suppressed.

[0497] When a coupling agent (e) is used that is liquid at 23°C and does not have a functional group that reacts with the main component contained in the film adhesive, the content of the coupling agent (e) in the adhesive composition and the film adhesive preferably satisfies the numerical range set separately below.

[0498] [Crosslinking agent (f)]

[0499] When a substance having functional groups such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, or an isocyanate group capable of bonding with other compounds, such as the acrylic resin described above, is used as the polymer component (a), the adhesive composition and the film adhesive may contain a crosslinking agent (f). The crosslinking agent (f) is a component for bonding and crosslinking the functional groups in the polymer component (a) with other compounds. By crosslinking in this manner, the initial adhesive strength and cohesive strength of the film adhesive can be adjusted.

[0500] Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

[0501] When an organic polyisocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film adhesive through the reaction between the crosslinking agent (f) and the polymer component (a).

[0502] The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0503] When a crosslinking agent (f) is used, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a) in the adhesive composition. By setting the content of the crosslinking agent (f) to be greater than the lower limit, the effect of using the crosslinking agent (f) can be more significantly achieved. By setting the content of the crosslinking agent (f) to be less than the upper limit, excessive use of the crosslinking agent (f) can be suppressed.

[0504] When a crosslinking agent (f) is used that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferred that the content of the crosslinking agent (f) in the adhesive composition and the film-like adhesive satisfy the numerical range set separately below.

[0505] [Energy ray curable resin (g)]

[0506] By containing the energy-ray-curable resin (g) in the adhesive composition and the film-like adhesive, the properties of the film-like adhesive can be changed by irradiation with energy rays.

[0507] The energy ray curable resin (g) may be the component (α1), but is preferably not the component (α1).

[0508] The energy ray curable resin (g) is obtained from an energy ray curable compound.

[0509] Examples of the energy-ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

[0510] The energy-ray curable resin (g) contained in the adhesive composition may be only one kind or two or more kinds. When it is two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0511] When an energy-ray curable resin (g) is used, the content of the energy-ray curable resin (g) in the adhesive composition is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass relative to the total mass of the adhesive composition.

[0512] [Photopolymerization initiator (h)]

[0513] When the adhesive composition and the film-like adhesive contain the energy-ray curable resin (g), a photopolymerization initiator (h) may be contained in order to efficiently advance the polymerization reaction of the energy-ray curable resin (g).

[0514] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; and phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. Acylphosphine oxide compounds; sulfur compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

[0515] Examples of the photopolymerization initiator (h) include photosensitizers such as amines.

[0516] The photopolymerization initiator (h) contained in the adhesive composition may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio thereof can be arbitrarily selected.

[0517] When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable resin (g) in the adhesive composition.

[0518] When a photopolymerization initiator (h) is used that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferred that the content of the photopolymerization initiator (h) in the adhesive composition and the film-like adhesive satisfy the numerical range set separately below.

[0519] [General additives (i)]

[0520] The general additive (i) may be a known additive and can be arbitrarily selected according to the purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and gettering agents.

[0521] The adhesive composition and the film-like adhesive may contain only one kind of the general-purpose additive (i), or two or more kinds of the general-purpose additive (i). When the general-purpose additive (i) is two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0522] The content of the adhesive composition and the film-like adhesive is not particularly limited and may be appropriately selected depending on the intended purpose.

[0523] When a general-purpose additive (i) is used that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film adhesive, it is preferred that the content of the general-purpose additive (i) in the adhesive composition and the film adhesive satisfy the numerical range set separately below.

[0524] [Solvent]

[0525] The adhesive composition preferably further contains a solvent. A adhesive composition containing a solvent improves handleability.

[0526] The solvent is not particularly limited, but preferred solvents include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

[0527] The adhesive composition may contain only one type of solvent or two or more types of solvent. When the solvent is two or more types, the combination and ratio thereof can be arbitrarily selected.

[0528] From the viewpoint of being able to more uniformly mix the components contained in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

[0529] The content of the solvent in the adhesive composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent, for example.

[0530] [Component (α2)]

[0531] The component (α2) in the adhesive composition and the film-like adhesive is liquid at a temperature of 23°C. In addition, the component (α2) does not have a functional group that reacts with the main component contained in the film-like adhesive (that is, it does not react with the main component). The component that has a functional group that reacts with the main component contained in the film-like adhesive and is liquid at a temperature of 23°C reacts with the main component in the film-like adhesive and does not transfer from the film-like adhesive to the intermediate layer, and as a result, does not transfer to the adhesive layer. In this embodiment, instead of suppressing the transfer of the component that has the functional group and is liquid at a temperature of 23°C from the film-like adhesive to the adhesive layer, the transfer of the component (α2) that does not have the functional group and is liquid at a temperature of 23°C, which originally could not suppress the transfer from the film-like adhesive to the adhesive layer, is suppressed from the film-like adhesive to the adhesive layer.

[0532] For example, when the main component has a hydroxyl group or an amino group, an isocyanate group can be cited as a functional group that reacts with the main component.

[0533] As long as this condition is met, component (α2) is not particularly limited and can be arbitrarily selected according to the purpose. Among the components of the adhesive composition that do not belong to any one of the polymer component (a), filler (d), energy ray curable resin (g) and solvent, that is, among the thermosetting component (b) (for example, epoxy resin (b1) and thermosetting agent (b2)), curing accelerator (c), coupling agent (e), crosslinking agent (f), photopolymerization initiator (h) and general additive (i), the component that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film adhesive is component (α2). Film adhesives generally do not contain solvents.

[0534] Preferred examples of the component (α2) include epoxy resins (b1) and the like.

[0535] The component (α2) contained in the adhesive composition may be only one kind or two or more kinds. When it is two or more kinds, the combination and ratio thereof can be arbitrarily selected.

[0536] When the component (α2) is used, the content of the component (α2) in the adhesive composition can be appropriately adjusted depending on the type of the component (α2).

[0537] In the adhesive composition and the film-like adhesive, the content of the component (α2) is preferably 1 to 20 parts by mass relative to 100 parts by mass of the polymer component (a). By setting the content below the upper limit, the migration of the component (α2) in the film-like adhesive to the adhesive layer is further suppressed. By setting the content above the lower limit, the effect obtained by using the component (α2) becomes even higher.

[0538] In particular, when component (α2) is epoxy resin (b1), in the adhesive composition and the film-like adhesive, the content of component (α2) (epoxy resin (b1)) is preferably 3 to 17 parts by mass, more preferably 6 to 14 parts by mass, relative to 100 parts by mass of the content of the polymer component (a). By making the content below the upper limit, the transfer of component (α2) in the film-like adhesive to the adhesive layer is further suppressed, and the excessive use of component (α2) is suppressed. By making the content above the lower limit, the effect obtained by using component (α2) becomes higher.

[0539] As described later, the film adhesive can be cut well by cooling and expanding the film adhesive. That is, the semiconductor device manufacturing sheet of this embodiment is suitable as a sheet for cutting the film adhesive by cooling and expanding the film adhesive.

[0540] <<Method for preparing adhesive composition>>

[0541] The adhesive composition can be obtained by blending the respective components for constituting the adhesive composition.

[0542] For example, the adhesive composition can be prepared by the same method as the pressure-sensitive adhesive composition described above, except that the types of the blended components are different.

[0543] In the sheet for manufacturing a semiconductor device of the present embodiment, it is preferred that at least the film-like adhesive contains the component (α1) as a main component or at least the adhesive layer contains the component (γ1) as a main component.

[0544] That is, as an example of a preferred sheet for manufacturing a semiconductor device according to this embodiment, the following can be listed: a sheet for manufacturing a semiconductor device in which the film adhesive contains the component (α1) as the main component and the adhesive layer does not contain the component (γ1) as the main component; a sheet for manufacturing a semiconductor device in which the adhesive layer contains the component (γ1) as the main component and the film adhesive does not contain the component (α1) as the main component; a sheet for manufacturing a semiconductor device in which the film adhesive contains the component (α1) as the main component and the adhesive layer contains the component (γ1) as the main component.

[0545] Furthermore, in the sheet for producing a semiconductor device, it is more preferable that the film-like adhesive contains the component (α1) as a main component, and the adhesive layer contains the component (γ1) as a main component.

[0546] In the sheet for manufacturing a semiconductor device of this embodiment, it is more preferred that at least the film-like adhesive contains the component (α1) as a main component or at least the adhesive layer contains the component (γ1) as a main component, and the component (α1) and the component (γ1) are acrylic resins having a structural unit derived from a (meth)acrylate.

[0547] That is, as an example of a more preferred sheet for manufacturing a semiconductor device according to this embodiment, the following can be listed: a sheet for manufacturing a semiconductor device, wherein the film adhesive contains the component (α1) as a main component, the adhesive layer does not contain the component (γ1) as a main component, and the component (α1) is an acrylic resin having a structural unit derived from a (meth)acrylate; a sheet for manufacturing a semiconductor device, wherein the adhesive layer contains the component (γ1) as a main component, the film adhesive does not contain the component (α1) as a main component, and the component (γ1) is an acrylic resin having a structural unit derived from a (meth)acrylate; a sheet for manufacturing a semiconductor device, wherein the film adhesive contains the component (α1) as a main component, the adhesive layer contains the component (γ1) as a main component, and the component (α1) and the component (γ1) are acrylic resins having a structural unit derived from a (meth)acrylate.

[0548] Furthermore, in the sheet for manufacturing a semiconductor device, it is further preferred that the film-like adhesive contains the component (α1) as a main component, the adhesive layer contains the component (γ1) as a main component, and the component (α1) and the component (γ1) are acrylic resins having a structural unit derived from a (meth)acrylate.

[0549] As an example of a preferred sheet for manufacturing a semiconductor device according to this embodiment, there can be cited a sheet for manufacturing a semiconductor device comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0550] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0551] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0552] Furthermore, the film adhesive contains a component (α2), and the adhesive layer contains a component (γ2), wherein the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with a main component contained in the film adhesive.

[0553] The component (γ2) is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0554] The haze of a first test piece in the form of a film having a thickness of 10 μm and composed of the non-silicone resin (β1) is denoted as H(β).

[0555] The haze of a second test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0556] (X1)H(βα)-H(β)>7%,

[0557] The haze of a third test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted as H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0558] (X2)H(βγ)-H(β)>7%,

[0559] Furthermore, the film-like adhesive contains a component (α1) that is solid at a temperature of 23°C as a main component, the component (α1) is a polymer component (a), the adhesive layer contains a component (γ1) that is solid at a temperature of 23°C as a main component, the component (γ1) is an adhesive, and the intermediate layer contains one or more selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins as the non-silicone resin (β1).

[0560] In this sheet for manufacturing a semiconductor device, the intermediate layer may further contain a silicone resin.

[0561] Another example of a preferred semiconductor device manufacturing sheet according to this embodiment is a semiconductor device manufacturing sheet comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0562] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0563] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0564] Furthermore, the film-like adhesive contains a component (α2), and the adhesive layer contains a component (γ2).

[0565] The component (α2) is an epoxy resin (b1) that is liquid at 23° C. and has no functional group that reacts with the main component of the film adhesive.

[0566] The component (γ2) is an antistatic agent that is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0567] The haze of a first test piece in the form of a film having a thickness of 10 μm and composed of the non-silicone resin (β1) is denoted as H(β).

[0568] The haze of a second test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0569] (X1)H(βα)-H(β)>7%,

[0570] The haze of a third test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted as H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0571] (X2)H(βγ)-H(β)>7%,

[0572] Furthermore, the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23°C, wherein the component (α1) is a polymer component (a); the adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23°C, wherein the component (γ1) is an adhesive;

[0573] The intermediate layer contains ethylene-vinyl acetate copolymer as the non-silicone resin (β1),

[0574] In the film adhesive, the content of the epoxy resin (b1) is 1 to 20 parts by mass relative to 100 parts by mass of the polymer component (a).

[0575] In the adhesive layer, the content of the antistatic agent is 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive.

[0576] In the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units is 45% by mass or less.

[0577] In the sheet for manufacturing a semiconductor device, in the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units may be 30% by mass or less.

[0578] In the sheet for manufacturing a semiconductor device, the intermediate layer may further contain a silicone resin. In this case, the content of the silicone resin in the intermediate layer may be 0.01 to 10% by mass relative to the total mass of the intermediate layer.

[0579] As another example of a preferred semiconductor device manufacturing sheet according to this embodiment, there can be cited a semiconductor device manufacturing sheet comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0580] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0581] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0582] Furthermore, the film adhesive contains a component (α2), and the adhesive layer contains a component (γ2), wherein the component (α2) is an epoxy resin (b1) that is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the film adhesive.

[0583] The component (γ2) is an antistatic agent that is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0584] The haze of a first test piece in the form of a film having a thickness of 10 μm and composed of the non-silicone resin (β1) is denoted as H(β).

[0585] The haze of a second test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0586] (X1)H(βα)-H(β)>7%,

[0587] The haze of a third test piece having a thickness of 10 μm and formed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted as H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0588] (X2)H(βγ)-H(β)>7%,

[0589] Furthermore, the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23°C, the component (α1) is a polymer component (a), the adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23°C, the component (γ1) is an adhesive, and the polymer component (a) and the adhesive are acrylic resins having a structural unit derived from a (meth)acrylate.

[0590] The intermediate layer contains ethylene-vinyl acetate copolymer as the non-silicone resin (β1),

[0591] In the film adhesive, the content of the epoxy resin (b1) is 1 to 20 parts by mass relative to 100 parts by mass of the polymer component (a).

[0592] In the adhesive layer, the content of the antistatic agent is 0.1 to 10 parts by mass relative to 100 parts by mass of the adhesive.

[0593] In the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units is 45% by mass or less.

[0594] In the sheet for manufacturing a semiconductor device, in the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units may be 30% by mass or less.

[0595] In the sheet for manufacturing a semiconductor device, the intermediate layer may further contain polydimethylsiloxane. In this case, the content of the polydimethylsiloxane in the intermediate layer may be 0.01 to 10% by mass relative to the total mass of the intermediate layer.

[0596] ◇Method for manufacturing a sheet for semiconductor device manufacturing

[0597] The semiconductor device manufacturing sheet can be manufactured by stacking the layers so that the layers are in a corresponding positional relationship. The formation methods of the layers are as described above.

[0598] For example, the semiconductor device manufacturing sheet can be produced by separately preparing a base material, an adhesive layer, an intermediate layer, and a film adhesive in advance, and laminating and stacking them in the order of the base material, the adhesive layer, the intermediate layer, and the film adhesive.

[0599] However, this is only one example of a method for manufacturing a sheet for manufacturing a semiconductor device.

[0600] The semiconductor device manufacturing sheet can also be manufactured, for example, by pre-fabricating two or more intermediate laminates composed of a plurality of layers for forming the semiconductor device manufacturing sheet, and laminating these intermediate laminates to each other. The structure of the intermediate laminate can be appropriately selected. For example, a first intermediate laminate (equivalent to the support sheet) having a structure in which a substrate and an adhesive layer are laminated and a second intermediate laminate having an intermediate layer and a film-like adhesive layer are laminated can be pre-fabricated, and the adhesive layer in the first intermediate laminate is laminated to the intermediate layer in the second intermediate laminate to manufacture the semiconductor device manufacturing sheet.

[0601] However, this is only one example of a method for manufacturing a sheet for manufacturing a semiconductor device.

[0602] As the semiconductor device manufacturing sheet, for example, in the manufacture of Figure 1 In the case of a sheet for manufacturing a semiconductor device in which the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both smaller than the area of the first surface of the adhesive layer and the area of the first surface of the substrate, a step of processing the intermediate layer and the film-like adhesive to the target size can be added at any stage in the above-mentioned manufacturing method. For example, in the manufacturing method using the second intermediate laminate, a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to the target size can be added to produce a sheet for manufacturing a semiconductor device.

[0603] When manufacturing a sheet for manufacturing semiconductor devices having a release film on a film-like adhesive, for example, the film-like adhesive may be formed on the release film and the remaining layers may be laminated while maintaining this state. Alternatively, the release film may be laminated on the film-like adhesive after the substrate, adhesive layer, intermediate layer, and film-like adhesive are all laminated. The release film may be removed at a necessary stage before using the sheet for manufacturing semiconductor devices.

[0604] A sheet for manufacturing a semiconductor device having another layer other than the substrate, pressure-sensitive adhesive layer, intermediate layer, film-like adhesive, and release film can be manufactured by adding a step of forming and laminating the other layer at an appropriate time in the above-mentioned manufacturing method.

[0605] However, in order to manufacture the sheet for manufacturing the semiconductor device, it is necessary to select a combination that satisfies the formula (X1) as a combination of the non-silicone resin (β1) in the film adhesive and the component (α2) in the intermediate layer; or it is necessary to select a combination that satisfies the formula (X2) as a combination of the non-silicone resin (β1) in the film adhesive and the component (γ2) in the adhesive layer.

[0606] That is, this embodiment is a method for manufacturing a sheet for manufacturing a semiconductor device, wherein:

[0607] The semiconductor device manufacturing sheet comprises a base material, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0608] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0609] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0610] Furthermore, at least the film-like adhesive contains the component (α2) or at least the adhesive layer contains the component (γ2),

[0611] The component (α2) is liquid at 23° C. and does not have a functional group that reacts with the main component of the film adhesive.

[0612] The component (γ2) is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0613] The haze of a first test piece in the form of a film having a thickness of 10 μm and composed of the non-silicone resin (β1) is denoted as H(β).

[0614] When the film-like adhesive contains the component (α2), the haze of a second test piece having a thickness of 10 μm and composed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0615] (X1)H(βα)-H(β)>7%,

[0616] When the adhesive layer contains the component (γ2), the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0617] (X2)H(βγ)-H(β)>7%,

[0618] The manufacturing method includes one or both of the following steps: a film adhesive preparation step of preparing the film adhesive containing the component (α2); and an adhesive layer preparation step of preparing the adhesive layer containing the component (γ2).

[0619] In this way, depending on the structure of the target semiconductor device manufacturing sheet, the manufacturing method of the semiconductor device manufacturing sheet of this embodiment may have the film-like adhesive manufacturing process without the adhesive layer manufacturing process, or may have the adhesive layer manufacturing process without the film-like adhesive manufacturing process, or may have both the film-like adhesive manufacturing process and the adhesive layer manufacturing process.

[0620] In the film-like adhesive preparation step, a film-like adhesive is prepared using the adhesive composition containing the component (α2).

[0621] In the adhesive layer forming step, an adhesive layer is formed using the adhesive composition containing the component (γ2).

[0622] ◇Method for manufacturing semiconductor chips with film-like adhesive (method for using sheets for manufacturing semiconductor devices)

[0623] In the process of manufacturing a semiconductor device, the sheet for manufacturing a semiconductor device can be used when manufacturing a semiconductor chip with a film-like adhesive.

[0624] Hereinafter, a method for manufacturing a semiconductor chip with a film-like adhesive (a method for using a sheet for manufacturing a semiconductor device) will be described in detail with reference to the drawings.

[0625] Figure 3A 、 Figure 3B and Figure 3C This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip with a film-like adhesive, showing a method for manufacturing a semiconductor device after attaching a sheet for manufacturing a semiconductor device to a semiconductor wafer. In this method, the sheet for manufacturing a semiconductor device is used as a dicing wafer. Here, the sheet is used as a dicing wafer. Figure 1 The case of the semiconductor device manufacturing sheet 101 shown will be described as an example.

[0626] First, if Figure 3A As shown, the sheet 101 for semiconductor device manufacturing from which the release film 15 is removed is heated, and the film-like adhesive 14 therein is attached to the back surface 9 b ′ of the semiconductor wafer 9 ′.

[0627] Reference numeral 9 a ′ denotes a circuit formation surface of the semiconductor wafer 9 ′.

[0628] The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40 to 70° C. from the viewpoint of further improving the heat-attachment stability of the semiconductor device manufacturing sheet 101 .

[0629] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is preferably 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum values are all equal to the width W of the semiconductor wafer 9' 9’ The maximum values are exactly the same, or different but with slight errors to almost the same.

[0630] For example, when the width W of the semiconductor wafer 9 ′ 9’ When the maximum value is 150 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value is preferably 150 to 160 mm. When the width W of the semiconductor wafer 9' is 9’ When the maximum value is 200 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value of is preferably 200 to 210 mm. When the width W of the semiconductor wafer 9' is 9’ When the maximum value is 300 mm, the width W of the middle layer 13 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum value is preferably 300 to 310 mm.

[0631] Thus, in this embodiment, the width W of the intermediate layer 13 is 13 The maximum value is related to the width W of the semiconductor wafer 9' 9’ The difference between the maximum values of and the width W of the film adhesive 14 14 The maximum value is related to the width W of the semiconductor wafer 9' 9’ The difference in the maximum value can be 0 to 10 mm.

[0632] Here, the width W of the semiconductor wafer 9 ′ is 9’ For example, it refers to the width of the semiconductor wafer 9 ′ in a direction parallel to the back surface 9 b ′ thereof.

[0633] Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9 ′ is cut from the circuit formation surface 9 a ′ of the semiconductor wafer 9 ′ using a blade (blade dicing), thereby dividing the semiconductor wafer 9 ′ and simultaneously cutting the film adhesive 14 .

[0634] Blade dicing can be performed by a known method. For example, after fixing the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not laminated (the non-laminated area) to a fixture such as a ring frame (not shown), a blade can be used to separate the semiconductor wafer 9' and cut the film adhesive 14.

[0635] like Figure 3B As shown, through this process, a plurality of semiconductor chips 914 with film-like adhesive are obtained, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on the back surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminate sheet 10, forming a semiconductor chip group 910 with film-like adhesive.

[0636] The back side 9b of the semiconductor chip 9 corresponds to the back side 9b' of the semiconductor wafer 9'. Figure 3B In FIG. 1 , reference numeral 9 a denotes a circuit formation surface of the semiconductor chip 9 , which corresponds to the circuit formation surface 9 a ′ of the semiconductor wafer 9 ′.

[0637] When performing blade cutting, it is preferred to use a blade to cut the entire area of the semiconductor wafer 9' in the thickness direction to divide it, and at the same time cut from the first surface 14a of the film adhesive 14 to the middle area of the intermediate layer 13 of the semiconductor device manufacturing sheet 101, thereby cutting the film adhesive 14 in its entire area in the thickness direction without cutting the adhesive layer 12.

[0638] That is, when performing blade cutting, it is preferred to use a blade to cut the stack of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' from the circuit forming surface 9a' of the semiconductor wafer 9' along their stacking direction at least to the first surface 13a of the intermediate layer 13, and not to cut to the surface of the intermediate layer 13 opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

[0639] In this step, the blade can be easily prevented from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, by making the main component of the intermediate layer 13 cut by the blade a non-silicone resin (β1) having a weight-average molecular weight of 20,000 to 100,000, particularly by making the weight-average molecular weight of 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0640] The conditions for blade cutting may be appropriately adjusted according to the purpose and are not particularly limited.

[0641] Typically, the rotation speed of the blade is preferably 15,000 to 50,000 rpm, and the moving speed of the blade is preferably 5 to 85 mm / second, and can be 5 to 75 mm / second.

[0642] like Figure 3C As shown, after dicing with a blade, the semiconductor chip 914 with the film-like adhesive is pulled off from the intermediate layer 13 in the laminated sheet 10 and picked up. Here, a pulling tool 7, such as a vacuum nozzle, is used to pull the semiconductor chip 914 with the film-like adhesive in the direction of arrow P. The pulling tool 7 is not shown in cross-section.

[0643] The semiconductor chip 914 with the film-like adhesive can be picked up by a known method.

[0644] When the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0645] For example, when the intermediate layer 13 contains ethylene-vinyl acetate copolymer as the non-silicone resin (β1) and a siloxane compound as the additive, the ratio of the content of the ethylene-vinyl acetate copolymer in the intermediate layer to the total mass of the intermediate layer is 90 to 99.99 mass%, and the ratio of the content of the siloxane compound in the intermediate layer to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with a film-like adhesive can be picked up more easily.

[0646] Preferred embodiments of the method for producing a semiconductor chip with a film-like adhesive described above include, for example:

[0647] A method for producing a semiconductor chip with a film-like adhesive, wherein the method comprises:

[0648] The semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.

[0649] The semiconductor device manufacturing sheet comprises a base material, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0650] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0651] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0652] Furthermore, at least the film-like adhesive contains the component (α2) or at least the adhesive layer contains the component (γ2),

[0653] The component (α2) is liquid at 23° C. and does not have a functional group that reacts with the main component of the film adhesive.

[0654] The component (γ2) is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0655] The haze of a film-like test piece having a thickness of 10 μm and composed of the non-silicone resin (β1) is defined as H(β).

[0656] When the film-like adhesive contains the component (α2), the haze of a second test piece having a thickness of 10 μm and composed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0657] (X1)H(βα)-H(β)>7%,

[0658] When the adhesive layer contains the component (γ2), the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0659] (X2)H(βγ)-H(β)>7%,

[0660] The manufacturing method comprises the following steps:

[0661] a step of heating the semiconductor device manufacturing sheet and simultaneously attaching the film-like adhesive therein to the back surface of the semiconductor wafer;

[0662] A step of dividing the semiconductor wafer by cutting the entire region in the thickness direction of the semiconductor wafer from the circuit-forming surface side of the semiconductor wafer to which the film-like adhesive is affixed, thereby producing the semiconductor chips, and simultaneously cutting from the film-like adhesive side of the semiconductor device manufacturing sheet to the middle region of the intermediate layer along the thickness direction of the semiconductor device manufacturing sheet, severing the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are neatly arranged on the intermediate layer; and

[0663] A step of pulling the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up (in this specification, sometimes referred to as "manufacturing method 1").

[0664] Figure 4A 、 Figure 4B and Figure 4C This is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip used as a sheet for manufacturing a semiconductor device, showing a case where the semiconductor chip is manufactured by dicing accompanied by formation of a reformed layer in a semiconductor wafer.

[0665] Figure 5A 、 Figure 5B and Figure 5C This is a cross-sectional view schematically illustrating another example of a method for manufacturing a semiconductor chip with a film-like adhesive, showing a method for using a semiconductor device manufacturing sheet after attaching it to a semiconductor chip. In this method, the semiconductor device manufacturing sheet is used as a bonding wafer. Figure 1 Taking the semiconductor device manufacturing sheet 101 shown as an example, a method of using the sheet will be described.

[0666] First, before using the semiconductor device manufacturing wafer 101, Figure 4A As shown, a semiconductor wafer 9' is prepared, and a back grinding tape (sometimes also referred to as "surface protection tape") 8 is attached to its circuit formation surface 9a'.

[0667] exist Figure 4A In the figure, the reference numeral W 9’ represents the width of the semiconductor wafer 9 ′.

[0668] Then, if Figure 4B As shown, laser light (not shown) is irradiated so as to be focused on a focal point set inside the semiconductor wafer 9 ′, thereby forming a modified layer 90 ′ inside the semiconductor wafer 9 ′.

[0669] The semiconductor wafer 9 ′ is preferably irradiated with the laser beam from the back surface 9 b ′ side of the semiconductor wafer 9 ′.

[0670] The focus position at this time is the position where the semiconductor wafer 9 ′ is scheduled to be divided (diced), and is set so that semiconductor chips of a target size, shape, and number can be obtained from the semiconductor wafer 9 ′.

[0671] Next, a grinder (not shown) is used to grind the back side 9b' of the semiconductor wafer 9'. Thus, the thickness of the semiconductor wafer 9' is adjusted to the target value, and at the same time, by utilizing the grinding force applied to the semiconductor wafer 9', the semiconductor wafer 9' is divided at the portion where the modified layer 90' is formed. Figure 4C As shown, a plurality of semiconductor chips 9 are manufactured.

[0672] Unlike other parts of semiconductor wafer 9', modified layer 90' of semiconductor wafer 9' is modified and weakened by laser irradiation. Therefore, by applying force to semiconductor wafer 9' with modified layer 90' formed thereon, a force is applied to modified layer 90', causing semiconductor wafer 9' to crack at the modified layer 90', thereby obtaining multiple semiconductor chips 9.

[0673] In this manner, semiconductor chips 9 are obtained as the target of the semiconductor device manufacturing sheet 101. More specifically, this step yields a semiconductor chip group 901 in which a plurality of semiconductor chips 9 are aligned and fixed on the back grinding tape 8.

[0674] When looking down at the semiconductor chipset 901 from above, the planar shape formed by connecting the outermost parts of the semiconductor chipset 901 (in this specification, this planar shape is sometimes referred to as the "planar shape of the semiconductor chipset") is exactly the same as the planar shape of the semiconductor wafer 9' when looking down at the semiconductor wafer 9' in the same way, or the difference between the planar shapes of the two is so slight that it can be ignored. It can be said that the planar shape of the semiconductor chipset 901 is roughly the same as the planar shape of the semiconductor wafer 9'.

[0675] Therefore, if Figure 4C As shown, the width of the planar shape of the semiconductor chip group 901 can be regarded as the width W of the semiconductor wafer 9 '. 9’ Furthermore, the maximum width of the planar shape of the semiconductor chip group 901 can be regarded as the width W of the semiconductor wafer 9 '. 9’ The maximum value is the same.

[0676] Although the case where semiconductor chips 9 can be manufactured from the semiconductor wafer 9 ′ as desired is shown here, some areas of the semiconductor wafer 9 ′ may not be divided into semiconductor chips 9 depending on the conditions when polishing the back surface 9 b ′ of the semiconductor wafer 9 ′.

[0677] Next, a semiconductor chip with a film-like adhesive is manufactured using the semiconductor chip 9 (semiconductor chip group 901 ) obtained above.

[0678] First, if Figure 5A As shown, a sheet 101 for semiconductor device manufacturing with the release film 15 removed is heated, and the film adhesive 14 therein is simultaneously attached to the back surfaces 9b of all the semiconductor chips 9 in the semiconductor chip group 901. In this case, the film adhesive 14 may be attached to a semiconductor wafer that has not been completely divided.

[0679] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is preferably 13 The maximum value of the film adhesive 14 is related to the width W 14 The maximum values are all equal to the width W of the semiconductor wafer 9' 9’ The maximum values (in other words, the width of the semiconductor chip group 901 ) are exactly the same, or are different but the error is slight or almost the same.

[0680] That is, the width W of the intermediate layer 13 13 The relationship between the maximum value of and the maximum width of the semiconductor chip group 901 can be the same as the width W of the intermediate layer 13 described above. 13 The maximum value and the width W of the semiconductor wafer 9 ' 9’ The relationship between the maximum value of and the width W of the film adhesive 14 is the same. 14 The relationship between the maximum value of and the maximum value of the width of the semiconductor chip group 901 can be the same as the width W of the film adhesive 14 described above. 14 The maximum value and the width W of the semiconductor wafer 9 ' 9’ The relationship of the maximum value is the same.

[0681] Except for the fact that the semiconductor chip group 901 is used instead of the semiconductor wafer 9', the film adhesive 14 (semiconductor device manufacturing sheet 101) can be attached to the semiconductor chip group 901 in this case by the same method as the attachment of the film adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1.

[0682] Next, the back grinding tape 8 is removed from the fixed semiconductor chip group 901. Figure 5B As shown, the semiconductor device manufacturing sheet 101 (film-like adhesive 14) is cooled and simultaneously stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12), thereby expanding. The direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow E1. This expansion allows the film-like adhesive 14 to be cut along the periphery of the semiconductor chip 9.

[0683] Through this process, a plurality of semiconductor chips 914 with film-like adhesive are obtained, each comprising a semiconductor chip 9 and a cut film-like adhesive 140 provided on the back surface 9b of the semiconductor chip 9. These semiconductor chips 914 with film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminate sheet 10, constituting a semiconductor chip group 910 with film-like adhesive.

[0684] The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are basically the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained in the manufacturing method 1 described above.

[0685] As described above, when a partial region of the semiconductor wafer 9 ′ is not divided into the semiconductor chips 9 when the semiconductor wafer 9 ′ is divided, this region is divided into the semiconductor chips by performing this step.

[0686] The semiconductor device manufacturing sheet 101 (film adhesive 14) is preferably expanded at a temperature of -5 to 5° C. By cooling and expanding the semiconductor device manufacturing sheet 101 in this manner (cold expansion), the film adhesive 14 can be cut more easily and accurately.

[0687] The expansion of the semiconductor device manufacturing sheet 101 (film adhesive) can be performed by a known method. For example, the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 can be expanded.

[0688] The area near the peripheral portion where the intermediate layer 13 and the film-like adhesive 14 are not laminated (the non-laminated area) is fixed to a clamp such as a ring frame (not shown), and then the area of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are laminated is pushed as a whole from the substrate 11 toward the adhesive layer 12, thereby expanding the semiconductor device manufacturing sheet 101.

[0689] exist Figure 5B In the embodiment, although the non-laminated area of the unlaminated intermediate layer 13 and the film-like adhesive 14 in the first surface 12a of the adhesive layer 12 is almost parallel to the first surface 13a of the intermediate layer 13, as described above, in the state of being expanded by pushing up the sheet 101 for manufacturing the semiconductor device, the non-laminated area includes an inclined surface, and the height of the inclined surface gradually decreases as it approaches the periphery of the adhesive layer 12 in a direction opposite to the above-mentioned pushing direction.

[0690] In this process, by providing the semiconductor device manufacturing sheet 101 with an intermediate layer 13 (in other words, by providing a film-like adhesive 14 before cutting on the intermediate layer 13), the film-like adhesive 14 can be cut with good precision at the target position (in other words, along the periphery of the semiconductor chip 9), thereby suppressing poor cutting.

[0691] like Figure 5C As shown, after expansion, the semiconductor chip 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminate 10 and picked up.

[0692] The picking up at this time can be performed by the same method as the picking up in the manufacturing method 1 described above, and the picking up suitability is also the same as the picking up suitability in the manufacturing method 1.

[0693] For example, in this step, when the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0694] In addition, for example, when the intermediate layer 13 contains ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, the ratio of the content of ethylene-vinyl acetate copolymer in the intermediate layer to the total mass of the intermediate layer is 90 to 99.99 mass%, and the ratio of the content of the siloxane compound in the intermediate layer to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with a film-like adhesive can be picked up more easily.

[0695] Preferred embodiments of the method for producing a semiconductor chip with a film-like adhesive described above include, for example:

[0696] A method for producing a semiconductor chip with a film-like adhesive, wherein the method comprises:

[0697] The semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.

[0698] The semiconductor device manufacturing sheet comprises a base material, an adhesive layer, an intermediate layer, and a film-like adhesive.

[0699] The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate.

[0700] The intermediate layer contains a non-silicone resin (β1) with a weight average molecular weight of 20,000 to 100,000 as a main component,

[0701] Furthermore, at least the film-like adhesive contains the component (α2) or at least the adhesive layer contains the component (γ2),

[0702] The component (α2) is liquid at 23° C. and does not have a functional group that reacts with the main component of the film adhesive.

[0703] The component (γ2) is liquid at 23° C. and does not have a functional group that reacts with the main component contained in the adhesive layer.

[0704] The haze of a film-like test piece having a thickness of 10 μm and composed of the non-silicone resin (β1) is defined as H(β).

[0705] When the film-like adhesive contains the component (α2), the haze of a second test piece having a thickness of 10 μm and composed of a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (α2) is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1):

[0706] (X1)H(βα)-H(β)>7%,

[0707] When the adhesive layer contains the component (γ2), the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin (β1) and 10 parts by mass of the component (γ2) is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2):

[0708] (X2)H(βγ)-H(β)>7%,

[0709] The manufacturing method comprises the following steps:

[0710] a step of irradiating a laser beam so as to focus the laser beam on a focal point set inside the semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer;

[0711] A step of grinding the back side of the semiconductor wafer after the modified layer is formed, and simultaneously dividing the semiconductor wafer at the location where the modified layer is formed by using a force applied to the semiconductor wafer during grinding to obtain a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged;

[0712] a step of heating the semiconductor device manufacturing sheet and simultaneously attaching the film-like adhesive therein to the back surfaces of all the semiconductor chips in the semiconductor chip group;

[0713] A step of cooling the semiconductor device manufacturing sheet after being attached to the semiconductor chip and simultaneously stretching it in a direction parallel to the surface thereof, thereby cutting the film adhesive along the periphery of the semiconductor chip to obtain a semiconductor chip group with film adhesive in which a plurality of semiconductor chips with film adhesive are aligned on the intermediate layer; and

[0714] A step of pulling the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up (in this specification, sometimes referred to as "manufacturing method 2").

[0715] So far, both the manufacturing method 1 and the manufacturing method 2 are based on the use of Figure 1 While the method for manufacturing a semiconductor chip with a film-like adhesive has been described using the semiconductor device manufacturing sheet 101 shown as an example, semiconductor chips with a film-like adhesive can also be manufactured using other semiconductor device manufacturing sheets of this embodiment. In this case, additional steps can be added as needed based on the structural differences between the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101 to manufacture a semiconductor chip with a film-like adhesive.

[0716] Not limited to manufacturing method 1 and manufacturing method 2, after obtaining the semiconductor chip group with film-like adhesive, before picking up the semiconductor chip with film-like adhesive, the stacked sheet can be expanded in a direction parallel to the surface (first surface) on the middle layer side of the adhesive layer, maintaining this state and further heating the peripheral portion of the semiconductor chip with film-like adhesive (semiconductor chip group with film-like adhesive) in the stacked sheet that is not loaded with the film-like adhesive.

[0717] This allows the peripheral portion to be shrunk, while also widening the distance between adjacent semiconductor chips on the laminated sheet, i.e., the kerf width, and maintaining the kerf width with high uniformity. Furthermore, the semiconductor chips with the film adhesive can be more easily picked up.

[0718] Example

[0719] The present invention will be described in more detail below using specific examples, but the present invention is not limited to the following examples.

[0720] <<Raw materials for preparing adhesive composition>>

[0721] The raw materials used to prepare the adhesive composition are shown below.

[0722] [Polymer component (a)]

[0723] (a)-1: an acrylic resin (weight average molecular weight: 800,000, glass transition temperature: 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[0724] [Epoxy resin (b1)]

[0725] (b1)-1: Bisphenol A epoxy resin in liquid form at 23°C ("jER828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of 184-194 g / eq, number average molecular weight of 370, viscosity at 25°C of 120-150 P (12-15 Pa·s))

[0726] [Thermosetting agent (b2)]

[0727] (b2)-1: Aralkyl-type phenolic resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, Inc., number average molecular weight: 1100, softening point: 63° C.)

[0728] [Filling material (d)]

[0729] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatech, average particle size 50 nm, methacrylsilane-treated)

[0730] [Coupling agent (e)]

[0731] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicone Co., Ltd.)

[0732] [Crosslinking agent (f)]

[0733] (f)-1: Toluene diisocyanate crosslinking agent ("CORONATE L" manufactured by TOSOH CORPORATION)

[0734] [Example 1]

[0735] <<Manufacturing of Sheets for Semiconductor Device Manufacturing>>

[0736] <Manufacturing of base materials>

[0737] Low-density polyethylene (LDPE, "SUMIKATHENE L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, extruded through a T-die method, and biaxially stretched using a cooling roll to obtain an LDPE substrate (thickness 110 μm).

[0738] <Preparation of Adhesive Layer>

[0739] A non-energy ray-curable adhesive composition was prepared, which contained an acrylic resin ("ORIBAIN BPS6367X" manufactured by TOYOCHEM CO., LTD.) (100 parts by mass) as an adhesive resin (I-1a), a crosslinking agent ("BXX5640" manufactured by TOYOCHEM CO., LTD., a xylylene diisocyanate crosslinking agent) (1 part by mass), and an amine ionic liquid that is liquid at 23° C. ("IL-A2" manufactured by Koei Chemical Industry Co., Ltd.) (3 parts by mass) as an antistatic agent.

[0740] Next, a release film having a single surface of a polyethylene terephthalate film subjected to a release treatment by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface of the release film. The film was then heated and dried at 100°C for 2 minutes to prepare a non-energy ray-curable adhesive layer (10 μm thick).

[0741] <Creating the middle layer>

[0742] At room temperature, ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight of 30,000, content of structural units derived from vinyl acetate of 25% by mass) (15 g) was dissolved in 85 g of tetrahydrofuran, and to the resulting solution was added a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan KK., the number of structural units represented by the formula "-Si(-CH3)2-O-" in one molecule being 45 to 230) (1.5 g) and stirred to prepare a composition for forming an intermediate layer.

[0743] The intermediate layer-forming composition obtained above was applied to the release-treated surface of a release film made of polyethylene terephthalate and subjected to release treatment on one side by silicone treatment. The intermediate layer (20 μm thick) was prepared by heating and drying at 70° C. for 5 minutes.

[0744] <Production of film adhesive>

[0745] A thermosetting adhesive composition was prepared containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass), and crosslinking agent (f)-1 (0.5 parts by mass). The contents shown here are all the contents of the target product excluding the solvent.

[0746] Next, a release film having a single surface of a polyethylene terephthalate film subjected to a release treatment by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface of the release film. The film was then heated and dried at 80°C for 2 minutes to prepare a thermosetting film-like adhesive (7 μm thick).

[0747] <Manufacturing of Sheets for Semiconductor Device Manufacturing>

[0748] The exposed surface of the adhesive layer obtained above, which is opposite to the side provided with the release film, and one surface of the substrate obtained above were bonded together to prepare a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0749] The exposed surface of the film-like adhesive obtained above, which is opposite to the side with the release film, and the exposed surface of the intermediate layer obtained above, which is opposite to the side with the release film, are bonded together to produce a second intermediate layer laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive, and a release film).

[0750] Next, a cutting blade is used to punch out the portion of the second intermediate layer stack with a release film from the release film on the intermediate layer side to the film adhesive to remove unnecessary portions, thereby producing a second intermediate layer stack with a release film, the processed product being formed by stacking a film adhesive (7 μm thick) having a circular planar shape (305 mm in diameter), an intermediate layer (20 μm thick) and a release film in sequence along their thickness direction on the release film on the film adhesive side.

[0751] Next, the release film is removed from the release-film-attached first intermediate laminate obtained above to expose one surface of the pressure-sensitive adhesive layer.

[0752] Furthermore, the circular release film was removed from the second intermediate layer laminated product with a release film obtained above to expose one surface of the intermediate layer.

[0753] Next, the newly exposed surface of the adhesive layer in the first intermediate laminate was bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate. The substrate and adhesive layer (i.e., support sheet) in the resulting laminate were punched from the substrate side using a cutting blade (370 mm diameter) so that they (the support sheet) had a circular planar shape (370 mm diameter) and were concentric with the circular film-like adhesive and intermediate layer (305 mm diameter) to remove unnecessary portions.

[0754] Thus, a sheet for manufacturing semiconductor devices with a release film is obtained, which is composed of a substrate (thickness of 110 μm), an adhesive layer (thickness of 10 μm), an intermediate layer (thickness of 20 μm), a film-like adhesive (thickness of 7 μm) and a release film stacked in sequence along their thickness direction.

[0755] <<Evaluation of Sheets for Semiconductor Device Manufacturing>>

[0756] <Measurement of H(β)>

[0757] A liquid material (first test composition) containing the ethylene-vinyl acetate copolymer was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by LINTEC Corporation) and dried to prepare a first test piece in the form of a film made of ethylene-vinyl acetate copolymer with a thickness of 10 μm.

[0758] The haze (H(β)) (%) of the first test piece was measured from the exposed surface side using a haze meter ("NDH7000" manufactured by NIPPON DENSHOKU INDUSTRIES Co., Ltd.) in accordance with JIS K 7136:2000. The results are shown in Table 1.

[0759] <Measurement of H(βα) and calculation of H(βα)-H(β)>

[0760] A liquid containing the ethylene-vinyl acetate copolymer and the epoxy resin (b1)-1 uniformly mixed therewith (second test composition) was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by LINTEC Corporation) and dried to prepare a second test piece having a film thickness of 10 μm and composed of a mixture of the ethylene-vinyl acetate copolymer (100 parts by mass) and the epoxy resin (b1)-1 (10 parts by mass).

[0761] The haze (H(βα)) (%) of the second test piece was measured in the same manner as for the first test piece. H(βα)-H(β) (%) was then calculated from the measured value. The results are shown in Table 1.

[0762] <Measurement of H(βγ) and calculation of H(βγ)-H(β)>

[0763] A liquid containing the ethylene-vinyl acetate copolymer and the amine ionic liquid (IL-A2) uniformly mixed therewith (third test composition) was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by LINTEC Corporation) and dried to prepare a third test piece having a film thickness of 10 μm and composed of a mixture of ethylene-vinyl acetate copolymer (100 parts by mass) and the amine ionic liquid (10 parts by mass).

[0764] The haze (H(βγ)) (%) of the third test piece was measured in the same manner as for the first test piece. H(βγ)-H(β) (%) was then calculated from the measured value. The results are shown in Table 1.

[0765] <Measurement of Pickup Force of Silicon Chips with Film Adhesive Before a Certain Time>

[0766] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0767] Using a dicing apparatus ("DFD6361" manufactured by DISCO Corporation) and a dicing blade ("ZH05-SD2000-NI-90-BB" manufactured by DISCO Corporation), with the blade rotation speed set to 50,000 rpm and the blade movement speed set to 25 mm / second, a so-called half-cut was performed, forming a 75 μm deep cut on one side of a silicon wafer (150 mm in diameter, 350 μm thick). This half-cut was performed so that a silicon chip with a size of 5 mm x 5 mm was finally obtained.

[0768] Next, backgrinding tape ("Adwill E-3100TN" manufactured by LINTEC Corporation) was attached to the half-cut surface of the silicon wafer. Then, using a back grinding device ("DGP8761" manufactured by DISCO Corporation), the exposed surface of the silicon wafer not attached with the backgrinding tape was ground until the thickness of the silicon wafer reached 30 μm. This split the silicon wafer to produce a plurality of silicon chips (30 μm thick) each measuring 5 mm × 5 mm (this size is sometimes referred to as "5 mm□" in this specification). This yielded a silicon chip set in which a plurality of silicon chips were neatly arranged and fixed on the backgrinding tape.

[0769] Next, the release film is removed from the semiconductor device manufacturing sheet obtained above that has not been through a period of time. Then, using a chip mounter ("Adwill RAD2700" manufactured by LINTEC Corporation), the semiconductor device manufacturing sheet is heated to 60°C and simultaneously attached to the exposed surfaces of all silicon chips in the above-mentioned silicon chip group through the film adhesive therein. Further, the back grinding tape is removed from all silicon chips. Thus, a laminated body consisting of a substrate, an adhesive layer, an intermediate layer, a film adhesive and a silicon chip group stacked in sequence along their thickness direction is obtained (a laminated body consisting of a laminated body consisting of a laminated sheet, a film adhesive and a silicon chip group stacked in sequence along their thickness direction).

[0770] Then, using an expander ("DDS2300" manufactured by DISCO Corporation), the film adhesive is expanded by the following steps, thereby cutting the film adhesive. Specifically, the laminate is first placed on a workbench. At this point, the substrate in the laminate is brought into contact with the workbench. Next, the laminate is adsorbed and fixed on the workbench. The workbench is then pushed upward at 0°C at an expansion rate of 100 mm / s and an expansion distance of 10 mm, thereby expanding the laminate in a direction parallel to the surface of the laminate. This cuts the film adhesive.

[0771] Next, the adsorption and expansion of the laminate are released, and a region near the outer periphery of the film adhesive in the laminate is heated to eliminate slack in the film adhesive in the region.

[0772] Thus, a silicon chip group with a film-like adhesive is obtained, in which a plurality of silicon chips with a film-like adhesive are neatly arranged and fixed on the middle layer in the laminated sheet through the film-like adhesive therein, and the silicon chip with a film-like adhesive comprises a silicon chip and a cut film-like adhesive arranged on the back of the silicon chip.

[0773] [Measurement of Pickup Force of Silicon Chips with Film Adhesive Before a Certain Time]

[0774] Next, using a pickup device ("PU100" manufactured by FASFORD TECHNOLOGY CO., LTD., with 5 pins), a film-adhesive silicon chip was picked up from the group of film-adhesive silicon chips obtained above, with a lift height of 250 μm and a spread of 4 mm. The pickup force at this time was measured. The pickup force was measured at 30 locations, and the average of these measured values was used as the pickup force (mN / 5 mm) for the film-adhesive silicon chip before a certain period of time. The results are shown in Table 1.

[0775] <Measurement of Pickup Force of Silicon Chips with Film Adhesive Over Time>

[0776] The sheet for manufacturing a semiconductor device obtained above was left to stand in an environment at 40° C. for one week to allow a certain period of time to pass.

[0777] Next, the pickup force of the silicon chip with the film-like adhesive after a certain period of time was measured using the same method as the pickup force after a certain period of time, except that the aged semiconductor device manufacturing sheet was used instead of the unaged semiconductor device manufacturing sheet. The results are shown in Table 1.

[0778] <Measurement of Surface Resistivity of Film Adhesive Before a Certain Time Passes>

[0779] The release film was removed from the sheet for manufacturing semiconductor devices obtained above, and the entire exposed surface of the resulting film-like adhesive was attached to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A)PL thin 8LK" manufactured by LINTEC Corporation). The resulting laminate was then cut into a size of 100 mm × 100 mm, and the laminate of the adhesive tape and the film-like adhesive was peeled off from the intermediate layer to prepare a test piece. After the test piece was allowed to stand for 24 hours at 23°C and a relative humidity of 50% to adjust the humidity, the surface resistivity of the exposed surface of the film-like adhesive (the surface that was once the intermediate layer side) was measured. A digital electrometer (manufactured by ADVANTEST CORPORATION) was used to measure the surface resistivity with an applied voltage of 100 V. The results are shown in Table 1.

[0780] <Measurement of Surface Resistivity of Film Adhesives Over Time>

[0781] The sheet for manufacturing a semiconductor device obtained above was left to stand in an environment at 40° C. for one week to allow a certain period of time to pass.

[0782] The surface resistivity of the film-like adhesive after a period of time was then measured using the same method as the surface resistivity measurement before a period of time, except that the sheet for manufacturing a semiconductor device after a period of time was used instead of the sheet for manufacturing a semiconductor device before a period of time. The results are shown in Table 1.

[0783] <Calculation of the Silicon Concentration Ratio in the Film-like Adhesive-Side Surface of the Intermediate Layer>

[0784] During the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before lamination with the adhesive layer is analyzed by XPS, and the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si) are measured. Based on the measured values, the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is calculated.

[0785] XPS analysis was performed using an X-ray photoelectron spectroscopy device ("Quantra SXM" manufactured by ULVAC, Inc.) with an irradiation angle of 45° and an X-ray beam diameter of The results were performed under the condition of an output of 4.5 W. The results are shown in the column "Concentration ratio (%) of element in the intermediate layer" in Table 1 together with the concentration ratio (%) of other elements.

[0786] <Evaluation of the effect of suppressing chip generation during blade cutting>

[0787] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0788] The release film was removed from the sheet for producing a semiconductor device obtained above.

[0789] A silicon wafer (300 mm in diameter and 75 μm thick) whose backside had been ground by dry polishing was used. A die bonder ("Adwill RAD2500," manufactured by LINTEC Corporation) was used to heat the semiconductor device manufacturing sheet to 60°C while simultaneously attaching it to the backside (ground surface) of the silicon wafer via the film adhesive contained therein. This yielded a laminated body composed of the substrate, adhesive layer, intermediate layer, film adhesive, and silicon wafer laminated in this order along their thickness directions (a laminated body composed of the laminated sheet, film adhesive, and silicon wafer laminated in this order along their thickness directions).

[0790] Next, a region near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer in the laminate (the non-laminated region) is fixed to a wafer dicing ring frame.

[0791] Next, a cutting device ("DFD6361" manufactured by DISCO Corporation) was used for cutting, thereby dividing the silicon wafer and simultaneously cutting the film adhesive to obtain a silicon chip with a size of 8mm×8mm. The cutting at this time was carried out in the following manner: the rotation speed of the blade was set to 30000rpm and the moving speed of the blade was set to 30mm / second, and the blade was used to cut from the attachment surface of the silicon wafer of the film adhesive of the semiconductor device manufacturing sheet to the middle area of the intermediate layer (that is, the entire area in the thickness direction of the film adhesive and the area from the surface of the intermediate layer from its film adhesive side to the middle). As a blade, "Z05-SD2000-D1-90 CC" manufactured by DISCO Corporation was used.

[0792] Thus, a silicon chip group with a film-like adhesive is obtained, in which a plurality of silicon chips with a film-like adhesive are neatly arranged and fixed on the middle layer in the laminated sheet through the film-like adhesive therein, and the silicon chip with a film-like adhesive comprises a silicon chip and a cut film-like adhesive arranged on the back of the silicon chip.

[0793] [Evaluation of the Effect of Suppressing Chip Generation]

[0794] The silicon chip set with the film-like adhesive obtained above was observed from above the silicon chip side using a digital microscope (Keyence Corporation "VH-Z100") to check for the presence of shavings. A score of "A" indicated no shavings at all, while a score of "B" indicated a slight amount of shavings. The results are shown in Table 1.

[0795] <Evaluation of Cutting Properties of Film Adhesive During Expansion>

[0796] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0797] A silicon wafer having a circular planar shape with a diameter of 300 mm and a thickness of 775 μm was used, and a backgrinding tape (“Adwill E-3100TN” manufactured by LINTEC Corporation) was attached to one surface of the silicon wafer.

[0798] Next, a laser irradiation device ("DFL73161" manufactured by DISCO Corporation) was used to irradiate the silicon wafer with a laser beam focused on a focal point set inside the wafer, thereby forming a modified layer inside the wafer. The focal point was set so that multiple 8 mm x 8 mm silicon chips could be obtained from the wafer. Furthermore, the laser beam was irradiated from the other side of the wafer (the side not affixed with backgrinding tape).

[0799] Next, the other surface of the silicon wafer is ground using a grinder to a thickness of 30 μm. The grinding force applied to the silicon wafer simultaneously divides the silicon wafer at the site where the modified layer has been formed, producing multiple silicon chips. This results in a silicon chip set in which the multiple silicon chips are neatly aligned and fixed to the backgrinding tape.

[0800] Next, using a die mounter ("Adwill RAD2500" manufactured by LINTEC Corporation), the semiconductor device manufacturing sheet obtained above was heated to 60°C, and the film-like adhesive therein was simultaneously attached to the other surface (in other words, the polished surface) of all the silicon chips (silicon chip group).

[0801] Next, the area near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer of the sheet for manufacturing semiconductor devices attached to the silicon chip group (the non-laminated area) is fixed to a wafer dicing ring frame.

[0802] Next, the backgrinding tape was removed from the fixed silicon chip set. Next, using a fully automatic chip dicing machine (DISCO Corporation's "DDS2300"), the semiconductor device manufacturing sheet (film adhesive) was cooled at 0°C while being expanded parallel to its surface, thereby severing the film adhesive along the periphery of the silicon chip. At this time, the periphery of the semiconductor device manufacturing sheet was fixed, and the entire area of the semiconductor device manufacturing sheet where the intermediate layer and film adhesive were laminated was pushed up only to a height of 15 mm from the substrate side of the semiconductor device manufacturing sheet to achieve expansion.

[0803] Thus, a silicon chip group with a film-like adhesive is obtained, in which a plurality of silicon chips with a film-like adhesive are neatly arranged and fixed on an intermediate layer, and the silicon chip with a film-like adhesive comprises a silicon chip and a cut film-like adhesive arranged on the other surface (polished surface) of the silicon chip.

[0804] Next, after temporarily releasing the expansion of the semiconductor device manufacturing sheet, the laminated body (i.e., the laminated sheet) composed of the laminated base material, adhesive layer, and intermediate layer is expanded in a direction parallel to the first surface of the adhesive layer at room temperature. Furthermore, while maintaining this expanded state, the periphery of the silicon chip on which the film-shaped adhesive is not placed in the laminated sheet is heated.

[0805] As a result, the peripheral portion is shrunk while the kerf width between adjacent silicon chips on the laminate is maintained at a constant value or greater.

[0806] [Evaluation of Cutting Properties of Film Adhesives]

[0807] During the production of the aforementioned film-coated silicon chip assembly, the silicon chip assembly was observed from above the silicon chip side using a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION). The number of film-coated silicon chip assembly lines that were not actually formed, or the number of incompletely formed lines, was determined among the multiple film-coated silicon chip assembly lines extending in one direction and the multiple film-coated silicon chip assembly lines extending in a direction orthogonal to the direction, assuming the film-coated silicon chip assembly was normally cut by the expansion of the semiconductor device manufacturing sheet (film-coated silicon chip assembly). The film-coated silicon chip assembly was evaluated for its cutting properties according to the following evaluation criteria. The results are shown in Table 1.

[0808] (Evaluation Criteria)

[0809] A: The total number of cut lines of the film adhesive that was not actually formed and the cut lines of the film adhesive that was not completely formed was 5 or less.

[0810] B: The total number of cut lines of the film adhesive that was not actually formed and the cut lines of the film adhesive that was not completely formed was 6 or more.

[0811] <Evaluation of Pickup Properties of Silicon Chips with Film Adhesive After Expansion>

[0812] After the evaluation of the cutting properties of the above-mentioned film adhesive is performed, a silicon chip group with a film adhesive and a die bonding device ("PU100" manufactured by FASFORD TECHNOLOGY CO., LTD.) are used to pick up the silicon chip with a film adhesive from the middle layer in the laminated sheet under the conditions of a push-up height of 250 μm and a push-up speed of 5 mm / s. Then, the case where all silicon chips with a film adhesive can be picked up normally under the condition of a push-up time of 500 ms is evaluated as "A", the case where more than one silicon chip with a film adhesive cannot be picked up normally under the condition of a push-up time of 500 ms, but all silicon chips with a film adhesive can be picked up normally under the condition of a push-up time of 10 s is evaluated as "B", and the case where more than one silicon chip with a film adhesive cannot be picked up normally even under the condition of a push-up time of 10 s is evaluated as "C". The results are shown in Table 1.

[0813] <Measurement of T-peel strength between the intermediate layer and the film-like adhesive>

[0814] The release film was removed from the sheet for producing a semiconductor device obtained above.

[0815] The entire exposed surface of the film-like adhesive in the resulting sheet for manufacturing a semiconductor device was bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A)PL thin8LK" manufactured by LINTEC Corporation), and the resulting laminate was cut into a size of 50 mm × 100 mm to prepare a test piece.

[0816] For this test piece, according to JIS K6854-3, the laminate of the substrate, adhesive layer, and intermediate layer (i.e., the laminated sheet) was pulled apart from the laminate of the film adhesive and adhesive tape, and the test piece was peeled off in a T-shaped pattern. The maximum peel force (mN / 50mm) measured at this time was used as the T-peel strength. In this case, the peeling speed was set to 50 mm / minute. The results are shown in Table 1.

[0817] <<Manufacturing and Evaluation of Sheets for Semiconductor Device Manufacturing>>

[0818] [Example 2]

[0819] A sheet for semiconductor device manufacturing was produced and evaluated in the same manner as in Example 1, except that the siloxane compound was not added when preparing the intermediate layer-forming composition, and the amount of ethylene-vinyl acetate copolymer used was 16.5 g instead of 15 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer, so that only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. "-" in the Additive column in Table 1 indicates that the additive was not used.

[0820] [Example 3]

[0821] A sheet for semiconductor device manufacturing was produced and evaluated in the same manner as in Example 2, except that an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of structural units derived from vinyl acetate 40% by mass) of the same mass was used instead of the ethylene-vinyl acetate copolymer when preparing the intermediate layer-forming composition. The results are shown in Table 1.

[0822] [Comparative Example 1]

[0823] An acrylic resin (acrylic copolymer) dispersion ("COPONYL N2359-6" manufactured by Nippon Synthetic Chemical Industry Co., Ltd., with a solid content concentration of 34%) (100 parts by mass) and a polyisocyanate compound ("CORONATEL" manufactured by Nippon Polyurethane Industry Co., Ltd., with a solid content concentration of 75%) (10 parts by mass) were mixed and stirred at room temperature to prepare a comparative intermediate layer-forming composition.

[0824] A comparative sheet for semiconductor device manufacturing was produced in the same manner as in Example 1 except that this comparative intermediate layer-forming composition was used instead of the above intermediate layer-forming composition.

[0825] [Comparative Example 2]

[0826] A comparative sheet for manufacturing a semiconductor device was manufactured in the same manner as in Example 1, except that the intermediate layer was not produced. More specifically, during the manufacturing process of the sheet for manufacturing a semiconductor device in Example 1, the release-treated surface of the release film was bonded to the exposed surface of the film-like adhesive having the release film, rather than to the exposed surface of the intermediate layer having the release film, thereby producing a laminate of the release film, the film-like adhesive, and the release film, rather than the second intermediate laminate with the release film. This laminate was then used in the subsequent steps.

[0827] The comparative semiconductor device manufacturing sheet was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0828] [Table 1]

[0829]

[0830] Based on the above results, it can be seen that in Examples 1 to 3, the pickup force of the silicon chip with the film-like adhesive was not confirmed to change depending on whether the semiconductor device manufacturing sheet has passed for a period of time, and even if the semiconductor device manufacturing sheet has passed for a period of time, no change in the physical properties of the film-like adhesive was confirmed. This means that even if the semiconductor device manufacturing sheet has passed for a period of time, the composition of the film-like adhesive has not changed significantly. In other words, although the film-like adhesive contains epoxy resin (b1)-1 (crosslinking agent (f)-1 is not component (α2)) as component (α2), even if the semiconductor device manufacturing sheet has passed for a period of time, the migration of the component (α2) to the adhesive layer side is suppressed.

[0831] Furthermore, in Examples 1 to 3, the surface resistivity of the film adhesive was greater than 1.0×10 14 Ω / □, even after a period of time has passed on the semiconductor device manufacturing sheet, no change in the antistatic properties of the film-like adhesive on the side that was once the intermediate layer was observed. This indicates that even after a period of time has passed on the semiconductor device manufacturing sheet, the composition of the adhesive layer, which is the only layer containing an antistatic agent, has not changed significantly. The antistatic properties of the film-like adhesive were confirmed here, but it is speculated that even if the antistatic properties of the adhesive layer were confirmed, the effect of the passage of time on the semiconductor device manufacturing sheet would not be confirmed. That is, although the adhesive layer contains the amine ionic liquid as component (γ2) as an antistatic agent, even after a period of time has passed on the semiconductor device manufacturing sheet, the transfer of the component (γ2) to the film-like adhesive side is suppressed.

[0832] Thus, it was confirmed that in the semiconductor device manufacturing sheets of Examples 1 to 3, the intermediate layer suppressed the migration of the liquid component in the film adhesive to the adhesive layer side and suppressed the migration of the liquid component in the adhesive layer to the film adhesive side.

[0833] In Examples 1 to 3, both H(βα)-H(β) and H(βγ)-H(β) were 8% or more.

[0834] Furthermore, the values of H(βα)-H(β) and H(βγ)-H(β) suggest that the semiconductor device manufacturing sheets of Examples 1 and 2 more strongly suppress the transfer of liquid components between the adhesive layer and the film-like adhesive than the semiconductor device manufacturing sheet of Example 3.

[0835] In the ethylene-vinyl acetate copolymer as the main component of the intermediate layer (non-silicone resin (β1)), the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units was 25% by mass in Examples 1 and 2 and 40% by mass in Example 3.

[0836] Furthermore, in Examples 1 to 3, generation of cutting chips was suppressed during blade dicing, and failure in cutting the film adhesive was suppressed during expansion, resulting in excellent semiconductor wafer separation suitability.

[0837] In Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component (non-silicone resin (β1)) in the intermediate layer in the sheet for manufacturing a semiconductor device was 30,000 or less.

[0838] In Examples 1 to 3, the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90.9% by mass or more, and the content of the siloxane compound is 9.1% by mass or less, relative to the total mass of the intermediate layer.

[0839] Furthermore, in Example 1, the pickup property of the silicon chip with the film-like adhesive after expansion was further excellent.

[0840] In Example 1, the T-peel strength between the interlayer and the film adhesive was 100 mN / 50 mm, which was moderately low, and the silicon concentration in the interlayer was 9%, which was moderately high. These evaluation results are consistent with the evaluation results of the pickup properties of silicon chips with film adhesives described above.

[0841] In Examples 2 and 3, the intermediate layer in the sheet for manufacturing a semiconductor device did not contain the siloxane compound.

[0842] In Examples 1 to 3, nitrogen was not detected when the exposed surface of the intermediate layer was analyzed by XPS.

[0843] In contrast, in Comparative Example 1, the pickup force of the silicon chip with the film adhesive decreased as the semiconductor device manufacturing sheet lapsed over time, confirming changes in the physical properties of the film adhesive. This indicates that the composition of the film adhesive significantly changed as the semiconductor device manufacturing sheet lapsed over time. In other words, it can be inferred that although the film adhesive contained epoxy resin (b1)-1 as component (α2), the migration of this component to the adhesive layer side was not suppressed by the aging of the semiconductor device manufacturing sheet.

[0844] Furthermore, in Comparative Example 1, the surface resistivity of the film adhesive decreases due to the semiconductor device manufacturing sheet over a period of time, and it is confirmed that the antistatic property of the surface of the film adhesive that was once the middle layer side changes due to the semiconductor device manufacturing sheet over a period of time. This means that the composition of the adhesive layer, which is the only layer containing an antistatic agent, has changed significantly due to the semiconductor device manufacturing sheet over a period of time. The antistatic property of the film adhesive is confirmed here, but it can be inferred that even if the antistatic property of the adhesive layer is confirmed, the effect of the semiconductor device manufacturing sheet over a period of time will be confirmed. That is, it can be inferred that although the adhesive layer contains the amine ionic liquid as an antistatic agent as component (γ2), the transfer of this component to the film adhesive side is not suppressed due to the semiconductor device manufacturing sheet over a period of time.

[0845] Thus, in the comparative semiconductor device manufacturing sheet of Comparative Example 1, the intermediate layer did not inhibit the transfer of the liquid component in the film adhesive to the adhesive layer side, nor did it inhibit the transfer of the liquid component in the adhesive layer to the film adhesive side.

[0846] In Comparative Example 1, both H(βα)-H(β) and H(βγ)-H(β) were 1%.

[0847] In Comparative Example 2, regardless of whether the semiconductor device manufacturing sheet has been used for a period of time, the silicon chip with the film-like adhesive cannot be picked up, and the pickup force cannot be measured. This means that the composition of the film-like adhesive has changed significantly at the stage before the semiconductor device manufacturing sheet has been used for a period of time. That is, it can be inferred that although the film-like adhesive contains epoxy resin (b1)-1 as component (α2), the transfer of the component (α2) to the adhesive layer side has already occurred at the stage before the semiconductor device manufacturing sheet has been used for a period of time. This is because the semiconductor device manufacturing sheet for comparison in Comparative Example 2 does not have an intermediate layer.

[0848] In Comparative Example 2, the pickup properties of the silicon chip with the film-like adhesive after expansion were also poor.

[0849] In Comparative Example 2, as described above, not only could the silicon chip with the film adhesive not be pulled off from the intermediate layer for pickup, but also the test piece for measuring the surface resistivity of the film adhesive could not be prepared, and thus the surface resistivity could not be measured.

[0850] Industrial Applicability

[0851] The present invention can be used in the manufacture of semiconductor devices.

[0852] Description of Reference Numerals

[0853] 101: Sheet for manufacturing a semiconductor device; 11: Base material; 12: Adhesive layer; 13: Intermediate layer; 13a: First surface of the intermediate layer; 14: Film-like adhesive.

Claims

1. A sheet for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive. The semiconductor device manufacturing sheet is formed by laminating the adhesive layer, the intermediate layer, and the film-like adhesive in this order on the substrate. The intermediate layer contains a non-silicone resin β1 with a weight average molecular weight of 20,000 to 100,000 as a main component. Furthermore, at least the film adhesive contains component α2 or at least the adhesive layer contains component γ2, The component α2 is liquid at 23° C. and does not have a functional group that reacts with the main component of the film adhesive. The component α2 is a thermosetting component, a curing accelerator, a coupling agent, a cross-linking agent, a photopolymerization initiator or a general additive, The component γ2 is liquid at 23° C. and does not have a functional group that reacts with the main component of the adhesive layer. The component γ2 is an energy ray curable compound, a crosslinking agent, a photopolymerization initiator, an antistatic agent, an antioxidant, a softener, a filler, a rust preventive, a pigment, a dye, a sensitizer, a tackifier, a reaction retarder or a crosslinking accelerator, The main component refers to the component with the largest content and a weight average molecular weight of 20,000 or more in the layer or film containing the component. The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicone resin β1 is denoted as H(β). When the film-like adhesive contains the component α2, the haze of a second test piece having a thickness of 10 μm and composed of a mixture of 100 parts by mass of the non-silicone resin β1 and 10 parts by mass of the component α2 is denoted by H(βα). In this case, H(βα) and H(β) satisfy the following formula (X1): (X1)H(βα)-H(β)>7%, When the adhesive layer contains the component γ2, the haze of a third test piece having a thickness of 10 μm and formed from a mixture of 100 parts by mass of the non-silicone resin β1 and 10 parts by mass of the component γ2 is denoted by H(βγ). In this case, H(βγ) and H(β) satisfy the following formula (X2): (X2)H(βγ)-H(β)>7%.

2. The sheet for manufacturing a semiconductor device according to claim 1, wherein Furthermore, at least the film adhesive contains as a main component a component α1 that is solid at a temperature of 23° C., or at least the adhesive layer contains as a main component a component γ1 that is solid at a temperature of 23° C., The component α1 and the component γ1 are acrylic resins having a structural unit derived from a (meth)acrylate.

3. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein The intermediate layer contains one or more selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins as the non-silicone resin β1.

4. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein The intermediate layer contains ethylene-vinyl acetate copolymer as the non-silicone resin β1, In the ethylene-vinyl acetate copolymer, the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units is 30% by mass or less. 5 . The sheet for manufacturing a semiconductor device according to claim 1 , wherein the film-like adhesive is cooled and expanded to cut the film-like adhesive.

6. A method for producing a sheet for manufacturing a semiconductor device, the method for producing a sheet for manufacturing a semiconductor device according to any one of claims 1 to 5, The manufacturing method comprises any one or two of the following steps: a film adhesive manufacturing step of manufacturing the film adhesive containing the component α2; An adhesive layer forming step of forming the adhesive layer containing the component γ2.

7. A method for producing a semiconductor chip with a film-like adhesive, the method comprising using the sheet for producing a semiconductor device according to any one of claims 1 to 5, wherein: The semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. The manufacturing method comprises the following steps: a step of heating the semiconductor device manufacturing sheet and simultaneously attaching the film-like adhesive therein to the back surface of a semiconductor wafer; A step of dividing the semiconductor wafer by cutting the entire region in the thickness direction of the semiconductor wafer from the circuit-forming surface side of the semiconductor wafer to which the film-like adhesive is affixed, thereby producing the semiconductor chips, and simultaneously cutting from the film-like adhesive side of the semiconductor device manufacturing sheet to the middle region of the intermediate layer along the thickness direction of the semiconductor device manufacturing sheet, severing the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with film-like adhesive in which a plurality of semiconductor chips with film-like adhesive are neatly arranged on the intermediate layer; and A step of pulling the semiconductor chip with the film-like adhesive apart from the intermediate layer to pick it up.

8. A method for producing a semiconductor chip with a film-like adhesive, the method comprising using the sheet for producing a semiconductor device according to any one of claims 1 to 5, wherein: The semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip. The manufacturing method comprises the following steps: a step of irradiating a laser beam so as to focus the laser beam on a focal point set inside the semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer; A step of grinding the back side of the semiconductor wafer after the modified layer is formed, and simultaneously dividing the semiconductor wafer at the location where the modified layer is formed by using a force applied to the semiconductor wafer during grinding to obtain a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; a step of heating the semiconductor device manufacturing sheet and simultaneously attaching the film-like adhesive therein to the back surfaces of all the semiconductor chips in the semiconductor chip group; A step of cooling the semiconductor device manufacturing sheet after being attached to the semiconductor chip and simultaneously stretching it in a direction parallel to the surface thereof, thereby cutting the film adhesive along the periphery of the semiconductor chip to obtain a semiconductor chip group with film adhesive in which a plurality of semiconductor chips with film adhesive are aligned on the intermediate layer; and A step of pulling the semiconductor chip with the film-like adhesive apart from the intermediate layer to pick it up.

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