Sputtering apparatus and sputtering method using the same

Abstract

This disclosure relates to a sputtering apparatus and sputtering method for improving deposition uniformity on an object to be deposited. The sputtering apparatus may include: an outer rotating shaft having a tubular shape; an inner rotating shaft disposed within a hollow portion of the outer rotating shaft and rotatable independently of the outer rotating shaft; a first arm connected to one of the outer and inner rotating shafts and rotating about the first rotating shaft by rotation of the first rotating shaft; a second arm disposed on one side of the first arm and rotating about one side of the first arm by rotation of the other of the outer and inner rotating shafts; and a first magnet assembly connected to one side of the second arm.

Description

Technical Field

[0001] This disclosure relates to a sputtering apparatus and a sputtering method, and more specifically to a sputtering apparatus and a sputtering method for improving the uniformity of deposition on an object to be deposited. Background Technology

[0002] Sputtering, known as physical vapor deposition (PVD), is the most well-known method for depositing metal layers and related materials in the process of manufacturing semiconductor integrated circuits. The most commercially important sputtering method is plasma sputtering, which uses a magnetron behind the target to increase plasma density and sputtering velocity.

[0003] In recent years, plasma sputtering using miniature magnetrons has become widely used. Because the miniature magnetron rotates simultaneously around the circumference of the target, and its center is close to the sputtering surface of the target to project a strong magnetic field, a high-density plasma is generated. This high-density plasma increases the sputtering velocity and also produces a large number of ionized sputtered particles. Although the magnetron is spaced apart from the center of the target, ions tend to diffuse towards the center and sputter deposit across the entire substrate (or wafer). Essentially, because the sputtering region (or area) of the target affecting the substrate edges is much smaller than that at the substrate center, sputtering deposition tends to deposit a thinner layer at the substrate edges than at the substrate center.

[0004] However, small magnetrons positioned at the circumference have limitations in (re)depositing impurities or large amounts of sputtered particles onto the non-sputtering regions of the target. Material deposited at the target center is not easily sputtered again and forms a thickened film that is not easily attached to the substrate target. On the one hand, the (re)deposited film is peeled off from the target, resulting in excess particles in the chamber. These particles tend to fall onto the substrate, leading to yield losses or deterioration in equipment reliability, thus causing defects in the final integrated circuit. Therefore, a cleaning process is generally and frequently performed on the target. In cleaning mode, sputtering conditions are changed due to the production wafers not typically provided in the chamber, and sputtering is performed on the center of the target to remove the (re)deposited sputtered material on the target center.

[0005] [Existing Technical Documents]

[0006] [Patent Literature]

[0007] Korean Patent No. 10-0786713 Summary of the Invention

[0008] This disclosure provides a sputtering apparatus and sputtering method for precisely controlling the rotational trajectory of a magnet assembly to improve deposition uniformity on an object to be deposited.

[0009] According to an exemplary embodiment, a sputtering apparatus includes: an outer rotating shaft having a tubular shape; an inner rotating shaft disposed in a hollow portion of the outer rotating shaft to rotate independently of the outer rotating shaft; a first arm connected to one of the rotating shafts of the outer rotating shaft and the inner rotating shaft, and rotating about the rotating shaft by rotation of the rotating shaft; a second arm disposed on one side of the first arm to rotate about one side of the first arm by rotation of the other rotating shaft of the outer rotating shaft and the inner rotating shaft; and a first magnet assembly connected to one side of the second arm.

[0010] The sputtering apparatus may further include: a first rotating body connected to the other rotating shaft and rotating by rotation of the other rotating shaft; and a second rotating body connected to the second arm and rotating by a rotational force transmitted from the first rotating body, such that the second arm can rotate.

[0011] The sputtering apparatus may further include: a first magnet counterweight connected to the other side of the second arm; and a counterweight connected to the other side of the first arm.

[0012] The counterweight may have a weight greater than that of the first magnet counterweight.

[0013] The sputtering apparatus may further include: a third arm disposed on the other side of the first arm; a second magnet assembly connected to one side of the third arm; a first magnet counterweight connected to the other side of the second arm; and a second magnet counterweight connected to the other side of the third arm.

[0014] The third arm can be fixed to the other side of the first arm.

[0015] The sputtering apparatus may also include a third rotating body connected to a third arm and rotating by a rotational force transmitted from a first rotating body, and the third arm may rotate about the other side of the first arm by the rotation of the third rotating body.

[0016] The sputtering apparatus may also include a control unit configured to control the rotation of each of the outer and inner rotating axes.

[0017] The control unit can divide the process into two processes based on time, so as to control the difference in rotational speed between the outer rotating shaft and the inner rotating shaft differently.

[0018] The control unit can control the outer rotating shaft and the inner rotating shaft to have the same rotational speed in the first half of the process; and the outer rotating shaft and the inner rotating shaft to have different rotational speeds in the second half of the process.

[0019] The control unit can change the rotational trajectory of the first magnet assembly by controlling the rotational speed of each of the outer and inner rotational axes.

[0020] The control unit can determine the rotation path of the first magnet assembly based on the object to be deposited.

[0021] The sputtering apparatus may also include a reference position detection unit configured to detect the reference position of each of the first arm and the second arm.

[0022] The control unit can position each of the first arm and the second arm to the reference position before the process begins.

[0023] According to another exemplary embodiment, a sputtering method includes: performing a first sputtering while enabling a first arm to rotate at the same speed, the first arm being connected to one of an outer rotation axis and an inner rotation axis, each of the outer rotation axis and the inner rotation axis rotating independently and about the one rotation axis, and a second arm having a side connected to a first magnet assembly and rotating about one side of the first arm by rotation of the other rotation axis of the outer rotation axis and the inner rotation axis; and performing a second sputtering while enabling the first arm and the second arm to rotate at different speeds.

[0024] The second sputtering can be performed when the second arm has a slower rotational speed than the first arm.

[0025] A third arm may be provided on the other side of the first arm, with one side connected to the second magnet assembly.

[0026] The first sputtering can be performed while the first arm and the second arm are rotating with the third arm fixed to the first arm.

[0027] The first sputtering or the second sputtering can be performed by distinguishing the rotation start position of the first magnet assembly and the second magnet assembly.

[0028] The sputtering method may also include arranging each of the first arm and the second arm at a reference position.

[0029] The sputtering method may also include determining the rotation path of the first magnet assembly based on the object to be deposited. Attached Figure Description

[0030] The exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, wherein:

[0031] Figure 1 This is a schematic perspective view showing a sputtering apparatus according to an exemplary embodiment.

[0032] Figure 2 This is a schematic cross-sectional view illustrating a sputtering apparatus according to an exemplary embodiment.

[0033] Figure 3 This is a conceptual diagram used to illustrate the rotation of a magnet assembly according to an exemplary embodiment.

[0034] Figure 4 This is a diagram illustrating a sputtering apparatus including two magnet assemblies according to an exemplary embodiment.

[0035] Figure 5 This is a diagram showing the deposition profile according to an exemplary embodiment.

[0036] Figure 6 This is a diagram illustrating the rotation path of a magnet assembly according to an exemplary embodiment.

[0037] Figure 7 This is a diagram illustrating a reference position detection unit according to an exemplary embodiment.

[0038] Figure 8 It is a conceptual diagram used to illustrate the reference positions of each of the first arm and the second arm according to an exemplary embodiment.

[0039] Figure 9 This is a flowchart illustrating a sputtering method according to another exemplary embodiment. Detailed Implementation

[0040] Specific embodiments will be described in more detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments described herein. Rather, these embodiments are provided to make this disclosure thorough and complete, and to fully convey the scope of the invention to those skilled in the art. Like reference numerals in the drawings denote like elements. Furthermore, in the drawings, the dimensions of layers and regions are enlarged for clarity of illustration.

[0041] Figure 1 This is a schematic perspective view illustrating a sputtering apparatus according to an exemplary embodiment, and Figure 1 This is a schematic cross-sectional view illustrating a sputtering apparatus according to an exemplary embodiment.

[0042] refer to Figure 1 and Figure 2According to an exemplary embodiment, the sputtering apparatus 100 may include: an outer rotating shaft 111 having a tubular shape; an inner rotating shaft 112 disposed in the hollow portion of the outer rotating shaft 111 to rotate independently of the outer rotating shaft 111; a first arm 121 connected to one of the rotating shafts 111 or 112 of the outer rotating shaft 111 and the inner rotating shaft 112, and rotating about the one rotating shaft 111 or 112 by rotation of the one rotating shaft 111 or 112; a second arm 122 disposed on one side of the first arm 121, and rotating about the other side of the first arm 121 by rotation of the other rotating shaft 112 or 111 of the outer rotating shaft 111 and the inner rotating shaft 112; and a first magnet assembly 131 connected to one side of the second arm 122.

[0043] An outer rotating shaft 111 having a tubular shape may have a tube at its center and rotate about the central rotating shaft 11.

[0044] The inner rotating shaft 112 can be disposed in the hollow portion of the outer rotating shaft 111 and rotate independently of the outer rotating shaft 111. Here, the inner rotating shaft 112 can also rotate around the rotating shaft 11.

[0045] Here, the first drive unit 171 and the second drive unit 172 can be respectively disposed on the outer rotation shaft 111 and the inner rotation shaft 112. The outer rotation shaft 111 can rotate around the rotation shaft 111 via the first drive unit 171, and the inner rotation shaft 112 can rotate around the rotation shaft 111 via the second drive unit 172. For example, the first drive unit 171 may include a first motor 171a, a first pulley 171b, and a first belt 171c, and the second drive unit 172 may include a second motor 172a, a second pulley 172b, and a second belt 172c. Here, the outer rotation shaft 111 may include a first connecting portion 111b, which is connected to the first pulley 171b via the first belt 171c. When the first pulley 171b rotates via the first motor 171a, it rotates along with the rotational force transmitted by the first belt 171c. Furthermore, the inner rotating shaft 112 may include a second connecting portion 112a, which is connected to a second pulley 172b via a second belt 172c. When the second pulley 172b rotates via the second motor 172a, it rotates with the rotational force transmitted by the second belt 172c. The first drive unit 171 and the second drive unit 172 may be configured by a gear method, and in this case, each of the first connecting portion 111b and the second connecting portion 112a may have a serrated shape.

[0046] The first arm 121 may be connected to one of the outer rotation shaft 111 and the inner rotation shaft 112, and rotates about the one rotation shaft 111 or 112 by rotation of the one rotation shaft 111 or 112. For example, the outer rotation shaft 111 may be connected to the center of the first arm 121, and the first arm 121 may rotate about the outer rotation shaft 111 when the outer rotation shaft 111 rotates (or rotate by using the outer rotation shaft 111 as an axis).

[0047] The second arm 122 may be disposed on one side of the first arm 121 and rotate about that side of the first arm 121 by rotation of another rotation axis 112 or 111 of the outer rotation axis 111 and the inner rotation axis 112. Here, the second arm 122 may be connected to the other rotation axis 112 or 111 to rotate about that side of the first arm 121. For example, the center of the second arm 122 may be disposed corresponding to that side of the first arm 121, and the second arm 122 may rotate about the center of the second arm 122 corresponding to the side of the first arm 121 (or rotate using the center of the second arm 122 as an axis). Here, the second arm 122 may rotate by rotation of the second rotating body 142, which will be described later, or may be connected to the second rotating body 142, which rotates by rotational force transmitted from the other rotation axis 112 or 111, to rotate together. The rotation of the second arm 122 will be described in detail later.

[0048] The first magnet assembly 131 can be connected to one side of the second arm 122, and rotates together with the second arm 122 about a rotation axis 111 or 112 by the rotation of the first arm 121, and rotates about said side of the first arm 121 by the rotation of the second arm 122 (e.g., by using the center of the second arm as an axis). That is, due to the rotation of the first magnet assembly 131 and its displacement relative to one side of the first arm 121, and the orbital movement or rotation of one side of the first arm 121 about said rotation axis 111 or 112, a complex track can be formed at one side of the second arm 122.

[0049] Here, the first magnet assembly 131 may include an inner magnet portion 131a having a first polarity and an outer magnet portion 131b surrounding the inner magnet portion 131a and having a second polarity opposite to the first polarity. The inner magnet portion 131a having the first polarity may be disposed at the central portion of the first magnet assembly 131. Here, the inner magnet portion 131a may include one large magnet or multiple magnets.

[0050] The outer magnet portion 131b may surround the inner magnet portion 131a, has a second polarity opposite to the first polarity, and is disposed at the edge of the first magnet assembly 131. Here, the outer magnet portion 131b may include a plurality of magnets arranged along the inner magnet portion 131a, or have a ring shape.

[0051] The first magnet assembly 131 may be a balanced magnetron in which the inner magnet portion 131a and the outer magnet portion 131b have the same magnetic flux, or an unbalanced magnetron in which the magnetic flux of the outer magnet portion 131b is greater than that of the inner magnet portion 131a. Here, the magnetic flux ratio of the inner magnet portion 131a to the outer magnet portion 131b in the unbalanced magnetron may be in the range of 1.5 to 2, or in the range of 3 to 5 or greater than 5, to charge the deep hole. Here, the first magnet assembly 131 may further include: a yoke 131c, supporting the inner magnet portion 131a and the outer magnet portion 131b; a first pole piece 131d, disposed opposite to the yoke 131c and covering the opening end of the inner magnet portion 131a; and a second pole piece 131e, disposed opposite to the yoke 131c and covering the opening end of the outer magnet portion 131b. The magnetic yoke 131c may be made of magnetically malleable stainless steel, and the upper ends of the inner magnet portion 131a and the outer magnet portion 131b may be attached to the magnetic yoke 131c to support the magnetic yoke 131c.

[0052] The first magnetic pole piece 131d may be disposed opposite to the magnetic yoke 131c and cover the lower end of the opening of the inner magnet portion 131a. Here, the first magnetic pole piece 131d may have a circular shape.

[0053] The second magnetic pole piece 131e may be disposed opposite to the magnetic yoke 131c and cover the lower end of the opening of the outer magnet portion 131b. Here, the second magnetic pole piece 131e may have a ring shape or a ring-shaped structure.

[0054] The first magnet assembly 131 can generate a magnetic field component parallel to the surface of the sputtering target 30 disposed below it, thereby forming a small, high-density plasma region with high sputtering velocity and high metal ionization around the sputtering target 30. Furthermore, when the first magnet assembly 131 is an unbalanced magnetron, it can generate a magnetic field component that guides metal ions ejected from the sputtering target 30 towards the object to be deposited, such as the substrate (or wafer). However, when the first magnet assembly 131 is a balanced magnetron, the ejected magnetic field component can produce a uniform (or symmetrical) magnetic field distribution.

[0055] The sputtering apparatus 100 according to an exemplary embodiment may further include: a first rotating body 141 connected to the other rotating shaft 112 or 111 to rotate by rotation of the other rotating shaft 112 or 111; and a second rotating body 142 connected to a second arm 122 to rotate by rotational force transmitted from the first rotating body 141, thereby enabling the second arm to rotate.

[0056] The first rotating body 141 may be connected to the other rotating shaft 112 or 111 and rotate by the rotation of the other rotating shaft 112 or 111. That is, the first rotating body 141 may be connected to the other rotating shaft 112 or 111 and rotate together with the other rotating shaft 112 or 111 about the rotating shaft 11. Furthermore, the first rotating body 141 may be integrated with the other rotating shaft 112 or 111.

[0057] The second rotating body 142 can be connected to the second arm 122, receiving rotational force transmitted from the first rotating body 141, and rotating by the rotational force transmitted from the first rotating body 141, thereby enabling the second arm 122 to rotate about one side of the first arm 121. For example, the second rotating body 142 can be located on one side of the first arm 121, supported by the first arm 121, connected to the center of the second arm 122, and rotate by the rotational force transmitted from the first rotating body 141, so that the second arm 122 can rotate about said one side of the first arm 121. Here, the second rotating body 142 can be connected to the second arm 122 via a shaft provided to the central axis 142a, and the shaft provided to the central axis 142a can be rotatably connected to said one side of the first arm 121. Here, the second rotating body 142 can directly contact the first rotating body 141 to receive rotational force, or it can be connected to the first rotating body 141 via a power transmission member (not shown) to receive rotational force transmitted from the first rotating body 141.

[0058] Here, each of the first rotating body 141 and the second rotating body 142 can be a cog gear or a swivel gear. When each of the first rotating body 141 and the second rotating body 142 is a cog gear, since the first rotating body 141 and the second rotating body 142 mesh with each other as a first gear and a second gear, rotational force can be transmitted from the first rotating body 141 to the second rotating body 142. Furthermore, since an auxiliary rotating body (or auxiliary gear) serving as a power transmission member (not shown) is provided between the first rotating body 141 and the second rotating body 142, and the second rotating body 142 meshes with the auxiliary rotating body that rotates meshing with the first rotating body 141, rotational force can be transmitted from the first rotating body 141 to the second rotating body 142 through the auxiliary rotating body. Here, the chain can be used as a power transmission component (not shown), the first rotating body 141 and the second rotating body 142 can be connected by the chain, and the chain can engage with the first rotating body 141 and the second rotating body 142 to rotate by the rotation of the first rotating body 141, and enable the second rotating body 142 to rotate.

[0059] When each of the first rotating body 141 and the second rotating body 142 is a rotary gear, each of the first rotating body 141 and the second rotating body 142 can be configured as a pulley, and the power transmission component (not shown) can be configured as a belt. Therefore, the first rotating body 141 and the second rotating body 142 can be connected by a belt, and rotational force can be transmitted from the first rotating body 141 to the second rotating body 142. Alternatively, when the surface of the first rotating body 141 directly contacts the surface of the second rotating body 142, rotational force can be transmitted from the first rotating body 141 to the second rotating body 142.

[0060] The first rotating body 141 and the second rotating body 142 can be accommodated in the accommodating space defined by the first arm 121 and the gear cover 125.

[0061] Figure 3 This is a conceptual diagram used to illustrate the rotation of a magnet assembly according to an exemplary embodiment.

[0062] refer to Figure 3 The first magnet assembly 131 can rotate about a rotation axis 11 that coincides with the center of the sputtering target 30 by rotating a rotation axis 111 or 112, and rotate together with the second arm 122 along the first arm 121 that rotates about the rotation axis 11 by rotating the first arm 122. Furthermore, the first magnet assembly 131 can rotate about one side of the first arm 121 (i.e., the central axis of the second rotating body) by rotating another rotation axis 112 or 111. Moreover, when the second rotating body 142 rotates by receiving rotational force transmitted from the first rotating body 141 that rotates by rotating the other rotation axis 112 or 111, the first magnet assembly 131 can rotate together with the second arm 122, which rotates about the central axis 142a of the second rotating body 142 located on the said side of the first arm 121.

[0063] In other words, the second rotating body 142, located on one side of the first arm 121, can perform planetary orbit rotation about the rotation axis 11, and the first magnet assembly 131, connected to the same side of the second arm 122, can perform satellite orbit rotation about the central axis 142a of the second rotating body 142 performing the planetary orbit rotation. Here, planetary orbit rotation refers to rotation along the same orbit as a planet revolving around the sun, and satellite orbit rotation refers to rotation along the same orbit as a satellite (e.g., the moon) revolving around a planet (e.g., the earth). Therefore, the first magnet assembly 131 can form a rotation path at the edge (or periphery) of the sputtering target 30 by planetary orbit rotation and also at the central portion (or around the center) of the sputtering target 30 by satellite orbit rotation. Thus, although the first magnet assembly 131 is smaller than the sputtering target 30, the first magnet assembly 131 can cover the entire area (or whole area) of the sputtering target 30 to perform sputtering.

[0064] Therefore, the sputtering apparatus 100 according to the exemplary embodiment can independently control the rotation of each of the outer rotation axis 111 and the inner rotation axis 112, thereby precisely controlling the rotation trajectory of the first magnet assembly 131 and covering the entire area of ​​the sputtering target 30 by using a small first magnet assembly 131. Thus, when the rotation trajectory of the first magnet assembly 131 is adjusted by individually controlling the rotation trajectory of the outer rotation axis 111 and the rotation of the inner rotation axis 112, the deposition uniformity on the object to be deposited can be improved, and deposition uniformity can be ensured regardless of the type of target material.

[0065] The sputtering apparatus 100 according to an exemplary embodiment may further include: a first magnet counterweight 151 connected to the other side of the second arm 122; and a counterweight 155 connected to the other side of the first arm 121.

[0066] The first magnet counterweight 151 may be connected to the other side of the second arm 122, symmetrically arranged with respect to the first magnet assembly 131, and forming a (weight) balance with the first magnet assembly 131 at the center of the second arm 122 (or the central axis of the second rotating body). For example, the first magnet counterweight 151 may have the same mass (or weight) as the first magnet assembly 131, forming a balance with the first magnet assembly 121 at the second arm 122, or may have a mass difference of ±10% relative to the mass of the first magnet assembly 131.

[0067] A counterweight 155 may be connected to the other side of the first arm 121, symmetrically arranged with respect to the second arm 122, and forming a (weight) balance with the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151 at the center of the first arm 121 (or the central axis of the rotation axis). For example, the counterweight 155 may have the same mass as the total weight of the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151, and form a balance with the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151 at the first arm 121. Furthermore, the counterweight 155 may have a mass difference of ±10% relative to the total weight of the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151. In addition to the total weight of the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151, the mass of the counterweight 155 can be determined by taking into account the weight of the first rotating body 141 and / or the second rotating body 142, which are located at the center of the first arm 121 on one side.

[0068] Here, the first magnet counterweights 151 and 155 can be implemented as an integrated body with a circular symmetry shape. Although no mechanical support is provided opposite to the first arm 121 and / or the second arm 122, this dual-counterweight configuration of the first magnet counterweights 151 and 155 can limit or prevent vibrations of the first magnet assembly 131 and the first arm 121 and second arm 122 connected thereto caused by the complex track of the first magnet assembly 131. That is, although the first arm 121 and second arm 122 are formed as cantilever types using only the first magnet assembly 131, eccentric and cantilever movements can be performed by the first magnet counterweights 151 and 155 without excessive vibration. Therefore, the degradation of deposition uniformity caused by vibration of the first magnet assembly 131 can be limited or prevented.

[0069] Furthermore, the counterweight 155 may have a greater weight than the first magnet counterweight 151. The counterweight 155 may primarily match the balance of the first arm 121 relative to the rotation axis 11 around which the first arm 121 rotates, and the first magnet counterweight 151 may secondarily match the balance of the second arm 122 relative to the central axis 142a of the second rotating body 142 around which the second arm 122 rotates. Since only the first magnet assembly 131 is located on said side of the second arm 122, the first magnet counterweight 151 may have the same weight as the first magnet assembly 131. However, since the second arm 122, connected to the first magnet assembly 131 and the first magnet counterweight 151, is located on said side of the first arm 121, and the second rotating body 142 is also supported by said side of the first arm 121, the counterweight 155 may have a weight equal to the sum of the masses of each of the first magnet counterweight 151, the second arm 122, and the second rotating body 142, except for the mass of the first magnet assembly 131. Therefore, the counterweight 155 can have a weight greater than that of the first magnet counterweight 151, thereby achieving balance of the second arm 122 relative to the central axis 142a of the second rotating body 142, and also achieving balance of the first arm 121 relative to the rotation axis 11. Thus, vibration of the first magnet assembly 131 caused by its complex trajectory can be limited or prevented, and degradation of deposition uniformity caused by vibration of the first magnet assembly 131 can be limited or prevented.

[0070] Furthermore, the first arm 121, the second arm 122, the first magnet assembly 131, the first magnet counterweight 151, and the counterweight 155 can be accommodated in the internal space defined by the sputtering target 30 and the cover 105.

[0071] Figure 4 This is a diagram illustrating a sputtering apparatus including two magnet assemblies according to an exemplary embodiment. Here, Figure 4 (a) is a cross-sectional view of the sputtering equipment, and Figure 4 (b) is a bottom view of the sputtering equipment.

[0072] refer to Figure 4 According to an exemplary embodiment, the sputtering apparatus 100 may further include: a third arm 123 disposed on the other side of the first arm 121; a second magnet assembly 132 connected to one side of the third arm 123; a first magnet counterweight 151 connected to the other side of the second arm 122; and a second magnet counterweight 152 connected to the other side of the third arm 123.

[0073] The third arm 123 may be disposed on the other side of the first arm 121 and symmetrically disposed with respect to the second arm 122. For example, the center of the third arm 123 may be disposed corresponding to the other side of the first arm 121.

[0074] The second magnet assembly 132 can be connected to one side of the third arm 123 and rotates together with the third arm 123 about a rotation axis 111 or 112 by the rotation of the first arm 121. Furthermore, when the third arm 123 is rotatable, the second magnet assembly 132 can rotate about the other side of the first arm 121 (e.g., about the center of the third arm) by the rotation of the third arm 123. Thus, due to the rotation and displacement of the second magnet assembly 132 relative to the other side of the first arm 123, and the orbital movement or rotation of the other side of the first arm 121 around the rotation axis 111 or 112, a complex track can be formed on one side of the third arm 123.

[0075] Here, the second magnet assembly 132 may be configured to be the same as the first magnet assembly 131, corresponding to the first magnet assembly 131, and includes an inner magnet portion 132a and an outer magnet portion 132b. Furthermore, the second magnet assembly 132 may also include a yoke 132c, a first magnetic pole piece 132d, and a second magnetic pole piece 132e, similar to the first magnet assembly 131.

[0076] The first magnet counterweight 151 can be connected to the other side of the second arm 122, symmetrically arranged with the first magnet assembly 131, and forms (weight) balance with the first magnet assembly 131 at the center of the second arm 122. For example, the first magnet counterweight 151 can have the same mass as the first magnet assembly 131 and form balance with the first magnet assembly 131 at the second arm 122.

[0077] The second magnet counterweight 152 can be connected to the other side of the third arm 123, symmetrically arranged with the second magnet assembly 132, and forming (weight) balance with the second magnet assembly 132 at the center of the third arm 123. For example, the second magnet counterweight 152 may have the same mass as the second magnet assembly 132, forming balance with the second magnet assembly 132 at the third arm 123, or have a mass difference of ±10% relative to the mass of the second magnet assembly 132. Here, the second magnet counterweight 152 can be configured to be the same as the first magnet counterweight 151 and have the same mass as the second magnet assembly 132.

[0078] Therefore, the balance of the first arm 121 relative to the rotation axis 11 around which it rotates can be easily matched. That is, the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151, and the third arm 123 connected to the second magnet assembly 132 and the second magnet counterweight 152 are symmetrically arranged to naturally form the balance of the first arm 121 relative to the rotation axis 11. Therefore, the following process of calculating or measuring the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151 to match the mass of the counterweight 155 with the total weight of the second arm 122 connected to the first magnet assembly 131 and the first magnet counterweight 151 can be omitted.

[0079] When a second magnet assembly 132 is included in addition to the first magnet assembly 131, the second magnet assembly 132 can be responsible for depositing the edges of the object to be deposited to compensate for the deposition rate at the edges of the object (which are typically deposited relatively thinner). Therefore, by addressing the limitation that the edges (partially) of the object to be deposited are thinner than the center (or central portion) of the object, the deposition uniformity on the object to be deposited can be improved even without additional sputtering processes.

[0080] Here, the third arm 123 can be fixed to the other side of the first arm 121. For example, in the state where the third arm 123 is arranged in the extending direction of the first arm 121, the third arm 123 can not rotate, and the second magnet assembly 132 can be arranged corresponding to the edge of the sputtering target 30 and spaced apart from the rotation axis 11.

[0081] When the second arm 122 and the third arm 123 rotate, and the owners of the first magnet assembly 131 and the second magnet assembly 132 are positioned corresponding to the central portion of the sputtering target 30, a repulsive force (or reaction force) may be generated between the outer magnet portion 131b of the first magnet assembly 131 and the outer magnet portion 132b of the second magnet assembly 132, which have the same polarity. This repulsive force may cause abnormal driving of the first magnet assembly 131 and / or the second magnet assembly 132, and cause the first magnet assembly 131 and / or the second magnet assembly 132 to deviate from the set rotation path.

[0082] However, when the third arm 123 is fixed to the other side of the first arm 121, and the second magnet assembly 132 is spaced apart from the rotation axis 11 and positioned corresponding to the edge of the sputtering target 30, the owners of the first magnet assembly 131 and the second magnet assembly 132 may not be positioned corresponding to the center portion of the sputtering target 30 and may be positioned close to the rotation axis 11. Therefore, abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 caused by the repulsive force (or reaction force) between the first magnet assembly 131 and the second magnet assembly 132 can be prevented, and deviation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path can be prevented.

[0083] Furthermore, when the second magnet assembly 132 is spaced apart from the rotation axis 11 and positioned corresponding to the edge of the sputtering target 30, the second magnet assembly 132 can be responsible for depositing the edge of the object to be deposited to compensate for the deposition rate of the edge of the object to be deposited (which is typically deposited relatively thin). Therefore, by addressing the limitation that the edge of the object to be deposited is thinner than the center, the deposition uniformity on the object to be deposited can be improved even without additional sputtering processes. Furthermore, when the edge of the object to be deposited is deposited separately from the center, the (process) time for (primarily) depositing the edge of the object to be deposited can be reduced.

[0084] The sputtering apparatus 100 according to an exemplary embodiment may further include a third rotating body 143, which is connected to a third arm 123 and rotates by a rotational force transmitted from the first rotating body 141.

[0085] A third rotating body 143 may be connected to a third arm 123 and rotate by a rotational force transmitted from the first rotating body 141. For example, the third rotating body 143 may be located on the other side of the first arm 123, supported by the first arm 121, connected to the center of the third arm 122, and rotate by a rotational force transmitted from the first rotating body 141, so that the third arm 123 can rotate about the other side of the first arm 121. Here, the third rotating body 143 may be connected to the third arm 122 via a shaft provided to a central axis 143a, and the shaft provided to the central axis 143a may be rotatably connected to the other side of the first arm 121. Here, the third rotating body 143 may directly contact the first rotating body 141 to receive rotational force, or may be connected to the first rotating body 141 via a power transmission member (not shown) to receive rotational force transmitted from the first rotating body 141.

[0086] Furthermore, the third arm 123 can rotate about the other side of the first arm 121 by rotating the third rotating body 143. Since the third rotating body 143, which rotates by the rotational force transmitted from the first rotating body 141, is located on the other side of the first arm 121 and connected to the third arm 123, the third arm 123 can rotate about the other side of the first arm 121 by rotating the third rotating body 143. For example, the center of the third arm 123 can be located corresponding to the other side of the first arm 123, and the third arm 123 can rotate about the center of the third arm 123 corresponding to the other side of the first arm 121 (or rotate using the center of the second arm 123 as an axis).

[0087] Here, the second magnet assembly 132 can rotate about a rotation axis 11 that coincides with the center of the sputtering target 30 by rotation of one rotation axis 111 or 112, and rotate together with the third arm 123 along the first arm 121 that rotates about the rotation axis 11 by rotation of the one rotation axis 111 or 112. Furthermore, the second magnet assembly 132 can rotate about the other side of the first arm 121 (i.e., the central axis of the third rotating body) by rotation of another rotation axis 112 or 111. Therefore, when the third rotating body 143 rotates by receiving the rotational force transmitted from the first rotating body 143 that rotates from the other rotation axis 112 or 111, the second magnet assembly 132 can rotate together with the third arm 123, which rotates about the central axis 143a of the third rotating body 143 located on the other side of the first arm 123.

[0088] In other words, the third rotating body 143, located on the other side of the first arm 121, can perform planetary orbit rotation about the rotation axis 11, and the second magnet assembly 132, connected to the side of the third arm 123, can perform satellite orbit rotation about the central axis 143a of the third rotating body 143 performing planetary orbit rotation. Therefore, except for the edges of the sputtering target 30 rotating in a planetary orbit, the second magnet assembly 132 can form a rotational path at the central portion of the sputtering target 30 by satellite orbit rotation to perform sputtering over the entire area (or whole area) of the sputtering target 30, even if its size is smaller than the sputtering target 30.

[0089] Here, the first magnet assembly 131 may have a rotation start position different from that of the second magnet assembly 132. For example, the first magnet assembly 131 may have a rotation start position corresponding to the edge of the sputtering target 30, and the second magnet assembly 132 may have a rotation start position corresponding to the center portion of the sputtering target 30. Here, the second rotating body 142 may have the same rotational speed as the third rotating body 143, and the second arm 122 may have the same rotational speed as the third arm 123. In this case, when the first magnet assembly 131 is positioned corresponding to the center portion of the sputtering target 30 and close to the rotation axis 11, the second magnet assembly 132 may be positioned corresponding to the edge of the sputtering target 30 and spaced apart from the rotation axis 11. Therefore, abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 caused by the repulsive force between the first magnet assembly 131 and the second magnet assembly 132 can be prevented, and deviation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path can be prevented.

[0090] Furthermore, the second rotating body 142 and the third rotating body 143 may have different sizes. That is, the second rotating body 142 may have a different rotational speed than the third rotating body 143, and the second arm 122 may have a different rotational speed than the third arm 123. When the second rotating body 142 has the same rotational speed as the third rotating body 143, the first magnet assembly 131 and the second magnet assembly 132 may meet once at the center of the sputtering target 30 every time the second rotating body 142 and the third rotating body 143 rotate once, and the number of times the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 increases. However, when the second rotating body 142 has a different rotational speed than the third rotating body 143, the number of times the first magnet assembly 131 meets the second magnet assembly 132 at the center of the sputtering target 30 may decrease, and the number of times the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 may decrease. Therefore, abnormal driving of the first magnet assembly 131 and the second magnet assembly 132, as well as deviation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path, can be prevented. Furthermore, since the second arm 122 has a different rotational speed than the third arm 123, the time between the first magnet assembly 131 and the second magnet assembly 132 may be relatively reduced, and the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 may be relatively reduced.

[0091] The sputtering apparatus 100 according to an exemplary embodiment may further include a control unit (not shown) for controlling the rotation of each of the outer rotating shaft 111 and the inner rotating shaft 112.

[0092] A control unit (not shown) can control the rotation of each of the outer rotation axis 111 and the inner rotation axis 112, as well as the rotational speed of each of the outer rotation axis 111 and the inner rotation axis 112. For example, the control unit (not shown) can be connected to a first drive unit 171 and a second drive unit 172, and control the first drive unit 171 and the second drive unit 172 to control the rotational speed of each of the outer rotation axis 111 and the inner rotation axis 112. The control unit (not shown) can independently control the rotation of the outer rotation axis 111 and the rotation of the inner rotation axis 112, and thereby precisely control the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132 to improve the deposition uniformity on the object to be deposited. Furthermore, the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132 can be set by distinguishing the rotational speeds of the outer rotation axis 111 and the inner rotation axis 112.

[0093] Figure 5 This is a diagram illustrating the deposition profile according to an exemplary embodiment. Here, Figure 5 (a) is a diagram showing the deposition profile when the first arm and the second arm have the same rotational speed. Figure 5 (b) is a diagram showing the deposition profile when the first arm has a rotational speed faster than the second arm, and Figure 5 (c) is a diagram showing the deposition profile when the first and second arms have the same rotational speed during the first half of the process, but the first arm has a faster rotational speed than the second arm during the second half. Furthermore, in Figure 5 (a) and Figure 5 In the rotational track of (b), the dashed line represents the rotational track of said side of the first arm (or the center of the second arm), and the solid line represents the rotational track of the first magnet assembly.

[0094] refer to Figure 5The control unit (not shown) can divide the process into two processes based on time to control the rotational speed difference between the outer rotating shaft 111 and the inner rotating shaft 112 differently. For example, a sputtering process on a material to be deposited can be divided into a first half and a second half (or a first sputtering process and a second sputtering process) based on time. In one part (or section) of the first half and the second half, since the outer rotating shaft 111 has the same rotational speed as the inner rotating shaft 112, a rotational speed difference between the outer rotating shaft 111 and the inner rotating shaft 112 may not occur. In the other part of the first half and the second half, since the outer rotating shaft 111 has a different rotational speed than the inner rotating shaft 112, a rotational speed difference between the outer rotating shaft 111 and the inner rotating shaft 112 may occur. That is, since the outer rotation shaft 111 and the inner rotation shaft 112 have the same rotation speed in any part, the first arm 121 and the second arm 122 can have the same rotation speed, and since the outer rotation shaft 111 and the inner rotation shaft 112 have different rotation speeds in another part, the first arm 121 and the second arm 122 can have different rotation speeds.

[0095] When the outer rotation axis 111 and the inner rotation axis 112 have the same rotation speed, and the first arm 121 and the second arm 122 have the same rotation speed, the deposition thickness at the edge of the object to be deposited can be greater than the deposition thickness at the center of the object. Figure 5 As shown in (a). Furthermore, when the rotational speed of the outer rotational shaft 111 is faster than that of the inner rotational shaft 112, and the rotational speed of the first arm 121 is faster than that of the second arm 122, the deposition thickness at the center of the object to be deposited may be greater than the deposition thickness at the edges of the object, such as... Figure 5 As shown in (b).

[0096] Therefore, the control unit (not shown) can control the outer rotating shaft 111 and the inner rotating shaft 112 to have the same rotational speed during the first half of the process and different rotational speeds during the second half of the process. For example, since the outer rotating shaft 111 and the inner rotating shaft 112 have the same rotational speed during the first half of the process, the first arm 121 and the second arm 122 can have the same rotational speed, and since the outer rotating shaft 111 and the inner rotating shaft 112 have different rotational speeds during the second half of the process, the first arm 121 and the second arm 122 can have different rotational speeds.

[0097] In a typical sputtering process, because the sputtering region (or area) of the sputtering target 30 that influences the edge of the object to be deposited (or provides the sputtered particles to be deposited) is smaller than that at the center of the substrate, the deposition thickness at the edge of the object to be deposited is less than that at the center. Therefore, since the first arm 121 and the second arm 122 have the same rotation speed during the first half of the process, they can cover the edge of the sputtering target 30, and the edge of the object to be deposited can be deposited thicker than the center to compensate for the deposition rate at the edge of the object (which is typically deposited relatively thin). Furthermore, since the first arm 121 and the second arm 122 have different rotation speeds during the second half of the process, they can cover the entire area of ​​the sputtering target 30. That is, since the sputtering region (or area) of the sputtering target 30 that provides (influences) the sputtered particles to be deposited is relatively wider than the edge of the object to be deposited, the center of the object to be deposited can be deposited thicker than the edge to improve the deposition uniformity on the object to be deposited in the sputtering process (first half + second half) on one object, such as... Figure 5 As shown in (c).

[0098] Therefore, the sputtering apparatus 100 according to the exemplary embodiment can control the difference in rotational speed between the outer rotation axis 111 and the inner rotation axis 112 differently by dividing the sputtering process into two processes according to time using a control unit (not shown), and dividing the main region into the edge and center of the object to be deposited in the first and second halves of the process, respectively, to perform the sputtering process. Therefore, the deposition uniformity on the object to be deposited can be further improved. For example, since the edge of the object to be deposited is mainly deposited during the first half of the process, and the center of the object to be deposited is mainly deposited during the second half of the process, the deposition uniformity of each region of the object to be deposited on the object can be improved throughout the entire process.

[0099] Figure 6 This is a diagram illustrating the rotation path of the magnet assembly according to an exemplary embodiment. Here, Figure 6 (a) is a diagram showing the rotational trajectory and path when the second arm has a rotational speed faster than the first arm, and Figure 6 (b) is a diagram showing the rotational trajectory and path when the first arm has a rotational speed faster than the second arm. Here, the blue line represents the rotational trajectory of said side of the first arm (or the center of the second arm), and the green line represents the rotational trajectory and path of the first magnet assembly.

[0100] refer to Figure 6A control unit (not shown) can control the rotational speed of each of the outer rotational shaft 111 and the inner rotational shaft 112 to change (or adjust) the rotational track of the first magnet assembly 131. The control unit (not shown) can control the rotational speed of each of the outer rotational shaft 111 and the inner rotational shaft 112 to adjust the rotational speed of each of the first arm 121 and the second arm 122, and the rotational track of the first magnet assembly 131 can be changed according to the rotational speed of each of the first arm 121 and the second arm 122. Here, the rotational path of the first magnet assembly 131 can be set by adjusting the rotational track of the first magnet assembly 131. Here, the rotational path of the first magnet assembly 131 represents the entire path of the first magnet assembly 131 formed by the rotational track of the first magnet assembly 131.

[0101] For example, when the first arm 121 has a rotational speed that is faster than that of the second arm 122, the rotational track can be formed as follows: Figure 6 The helical rotational track shown in (b) can be formed when the second arm 122 has a rotational speed faster than the first arm 121. Figure 6 The radial rotational path is shown in (a). Furthermore, when the rotational speed of the first arm 121 is much faster than the rotational speed of the second arm 122, a crown-shaped rotational path can be formed. For example, the crown-shaped rotational path may include a radially symmetrical rotational path, a rotational rotational path, and a tongue-shaped rotational path.

[0102] Here, the control unit (not shown) can determine the rotation path of the first magnet assembly 131 based on the object to be deposited. The rotation path of the first magnet assembly 131 can be determined based on the object to be deposited, and the object to be deposited can be changed according to the purpose of sputtering. That is, the rotation path of the first magnet assembly 131 can be determined according to the purpose of sputtering, and the control unit (not shown) can determine the rotation path of the first magnet assembly 131 based on the object to be deposited (or the purpose of sputtering).

[0103] For example, when a deposition substrate is used as the object to be deposited for performing a deposition process on the substrate, the rotation path of the first magnet assembly 131 can be determined as a radiation rotation path, such that uniform sputtering is performed over the entire area of ​​the sputtering target 30.

[0104] Furthermore, a cleaning process can be performed on the sputtering target 30 to remove contaminants from its surface. For example, when a small first magnet assembly 131 smaller than the sputtering target 30 is used, a large number of impurities or sputtered particles may deposit on the non-sputtering region at the center (central portion) of the sputtering target 30. Because an excessive number of particles are generated in the chamber (not shown) due to the formation of a thickened film that does not easily attach to the substrate target, or because these particles (or contaminants) fall onto the deposition substrate, the material deposited at the center (central portion) of the sputtering target 30 may not be easily sputtered again and stripped from the sputtering target 30. Therefore, a cleaning process for the sputtering target 30 can be performed, and a dummy substrate can be provided to the object to be deposited to remove impurities or sputtered particles deposited at the center (or central portion) of the sputtering target 30.

[0105] When a dummy substrate placed on the object to be deposited is used to clean the sputtering target 30, the rotation path of the first magnet assembly 131 can be determined as follows: Figure 6 The spiral rotation path shown in (b) Figure 6 (b) The rotation path of the first magnet assembly 131 is set as a helical rotation path. In this case, sputtered material (or sputtered particles) or impurities deposited at the central portion of the sputtering target 30 can be effectively sputtered and removed. Here, the sputtered material sputtered and removed from the central portion of the sputtering target 30 can be deposited onto a dummy substrate.

[0106] Furthermore, the control unit (not shown) can adjust the rotation track of the second magnet assembly 132 and determine the rotation path of the second magnet assembly 132 by using a method similar to (or the same as) that of the first magnet assembly 131.

[0107] Therefore, according to the exemplary embodiment, the sputtering apparatus 100 can apply the rotational speed difference between the outer rotation axis 111 and the inner rotation axis 112 and adjust (or change) the rotational trajectory of the first magnet assembly 131 and / or the second magnet assembly 132 by a control unit (not shown), thereby setting the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132. Here, the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132 can be determined according to the object to be deposited, and sputtering suitable for the object to be deposited can be performed.

[0108] Figure 7 This is a diagram illustrating a reference position detection unit according to an exemplary embodiment. Here, Figure 7 (a) is a top view showing the first detection unit and the second detection unit, and Figure 7 (b) is a side view showing the second detection unit.

[0109] refer to Figure 7According to an exemplary embodiment, the sputtering apparatus 100 may further include a reference position detection unit 160 for detecting the reference position of each of the first arm 121 and the second arm 122.

[0110] The reference position detection unit 160 can detect the reference position of each of the first arm 121 and the second arm 122. For example, the reference position detection unit 160 may include a first detection unit 161 for detecting the reference position of the first arm 121 and a second detection unit 162 for detecting the reference position of the second arm 122. The first detection unit 161 can detect the reference position of the first arm 121 and includes: a first moving body 161b having a position that changes according to the rotation of the first arm 121; and a first sensor 161a for sensing the first moving body 161b. For example, the first moving body 161b may be disposed on the upper end 111a of the outer rotation axis 111 and rotate about the rotation axis 11 via the outer rotation axis 111. Here, when the first arm 121 also rotates via the outer rotation axis 111, the position of the first moving body 161b may change according to the rotation of the first arm 121.

[0111] The first sensor 161a can sense the first moving body 161b, and detect the position of one side of the first arm 121 by sensing the movement of the first moving body 161b and based on the position of the first moving body 161b.

[0112] The second detection unit 162 can detect the reference position of the second arm 122 and includes: a second movable body 162b having a position that changes according to the rotation of the second arm 122; and a second sensor 162a for sensing the second movable body 162b. For example, the second movable body 162b can be mounted on a second pulley 172b that rotates together with the inner rotation axis 112, rotating about the central axis of the second pulley 172b, and rotating proportionally (or inversely proportionally) to the rotation of the inner rotation axis 112. Here, since the second arm 122 also rotates via the inner rotation axis 112, the position of the second movable body 162b can change according to the rotation of the second arm 122, and the position of one side of the second arm 122 can be obtained based on the position of the second movable body 162b.

[0113] The second sensor 162a can sense the second moving body 162b, and detect the position of one side of the second arm 122 by sensing the movement of the second moving body 162b and based on the position of the second moving body 162b.

[0114] Furthermore, when the second arm 122 rotates via the outer rotation shaft 111 and the first arm 121 rotates via the inner rotation shaft 112, the mounting positions of the first detection unit 161 and the second detection unit 162 can be interchanged.

[0115] Figure 8This is a conceptual diagram used to illustrate the reference positions of the first arm and the second arm according to an exemplary embodiment. Here, Figure 8 (a) shows a first position where the first magnet assembly is positioned corresponding to the edge of the sputtering target. Figure 8 (b) shows a second position where the first magnet assembly is rotated 90° clockwise from its position corresponding to the edge of the sputtering target. Figure 8 (c) shows a third position where the first magnet assembly is positioned corresponding to the center portion of the sputtering target, and Figure 8 (d) shows the fourth position of the first magnet assembly, which is rotated 90° clockwise from the position where the first magnet assembly is positioned corresponding to the center portion of the sputtering target.

[0116] refer to Figure 8 The control unit (not shown) enables each of the first arm 121 and the second arm 122 to be positioned at a reference location before the start of the process. For example, one of the following positions—a first position of the first arm 121 and the second arm 122, a second position of the first position of the first arm 121, a third position of the first position of the first arm 121, and a fourth position of the first position of the first arm 121—can be set as a reference position, at which the first magnet assembly 131 is positioned corresponding to the edge of the sputtering target 30. Figure 8 (a)) At the second position, the first magnet assembly 131 is rotated 90° clockwise from the position where the first magnet assembly is positioned corresponding to the edge of the sputtering target 30. Figure 8 (b)) At the third position, the first magnet assembly 131 is disposed corresponding to the center portion of the sputtering target 30. Figure 8 (c) In the fourth position, the first magnet assembly 131 is rotated 90° clockwise from its position corresponding to the center portion of the sputtering target 30. Here, the first arm 121 and the second arm 122 can be positioned at a reference position before the sputtering process begins. Here, each of the first arm 121 and the second arm 122 can be positioned at the reference position simply by aligning the first sensor 161a with the first moving body 161b and aligning the second sensor 162a with the second moving body 162b.

[0117] Furthermore, positions five through eight can be added to each position (45°) between positions one through four to broaden the range of reference positions. Here, the reference positions can be selected differently depending on the type of target material.

[0118] According to an exemplary embodiment, the sputtering apparatus 100 can detect the reference position of each of the first arm 121 and the second arm 122 via the reference position detection unit 160. This allows for the checking of the rotation start position and rotation end position of the first magnet assembly 131 and / or the second magnet assembly 132. Therefore,

[0119] For each sputtering process (or each object to be deposited), the process can be started when the first magnet assembly 131 and / or the second magnet assembly 132 are positioned at the start of rotation and terminated at the end of rotation. Furthermore, the start and end positions of the rotation of the first magnet assembly 131 and / or the second magnet assembly 132 can be determined according to the type of target material. Therefore, sputtering uniformity between each sputtering process (or each object to be deposited) can be improved, and deposition uniformity can be ensured regardless of the type of target material.

[0120] Figure 9 This is a flowchart illustrating a sputtering method according to another exemplary embodiment.

[0121] Reference Figure 9 A sputtering method according to another exemplary embodiment will be described in detail. Overlapping features previously described with respect to sputtering apparatus according to exemplary embodiments will be omitted.

[0122] According to another exemplary embodiment, the sputtering method may include: a process S100 in which a first arm 121 and a second arm 122 are rotated at the same speed while performing a first sputtering, the first arm 121 being connected to one of an independently rotatable outer rotation shaft 111 and an inner rotation shaft 112 and rotating about the one rotation shaft 111 or 112, the second arm 122 having one side connected to a first magnet assembly 131 and rotating about one side of the first arm 121 by rotation of the other rotation shaft 112 or 111 of the outer rotation shaft 111 and the inner rotation shaft 112; and a process in which a second sputtering is performed while the first arm 121 and the second arm 122 are rotated at different speeds.

[0123] In process S100, while performing the first sputtering, the first arm 121 and the second arm are able to rotate at the same speed. The first arm 121 is connected to and rotates about one of the independently rotatable outer rotation shaft 111 or inner rotation shaft 112. The second arm 122 has one side connected to the first magnet assembly 131 and rotates about that side of the first arm 121 by rotating the other rotation shaft 112 or inner rotation shaft 111. The first arm 121 and the second arm 122 can rotate at the same speed while performing the first sputtering, and the first arm can be connected to and rotate about one of the independently rotatable outer rotation shaft 111 or inner rotation shaft 112. Furthermore, the second arm 122 may have one side connected to the first magnet assembly 131, and rotate about that side of the first arm 121 by rotation of the other rotation axis 112 or 111, either the outer rotation axis 111 or the inner rotation axis 112. Here, the second arm 122 may rotate about that side of the first arm 121 by rotation of a second rotating body 142 that receives rotational force from the other rotation axis 112 or 111, and is connected to the second rotating body 142 so that it rotates together with the second rotating body 142 by rotation of the other rotation axis 112 or 111.

[0124] By enabling the first arm 121 and the second arm 122 to have the same rotational speed, the first sputtering can cover the edge of the sputtering target 30. Therefore, the edge of the object to be deposited can be deposited thicker than its center to compensate for the deposition rate of the edge of the object to be deposited (which is usually deposited relatively thin).

[0125] Subsequently, in process S200, the first arm 121 and the second arm 122 are rotated at different speeds while performing the second sputtering. The second sputtering can cover the entire area of ​​the sputtering target 30 by differentiating the rotational speeds of the first arm 121 and the second arm 122, and because the sputtering area of ​​the sputtering target 30 provides a relatively wider area of ​​sputtered particles to be deposited than the edge of the object to be deposited, the center of the object to be deposited is deposited thicker than its edge.

[0126] Here, the exemplary embodiments are not limited to the order of the first sputtering process S100 and the second sputtering process S200. For example, the second sputtering process S200 may be performed after the first sputtering process S100, and the first sputtering process S100 may be performed after the second sputtering process S200. As long as the sputtering method includes the first sputtering process S100 and the second sputtering process S200, all types of sputtering methods can be satisfied.

[0127] The first sputtering process S100 can compensate for the deposition rate at the edges of the object to be deposited (which are typically deposited relatively thinner), and the second sputtering process S200 can cover the entire area of ​​the sputtering target 30. That is, by performing the first sputtering process S100 and the second sputtering process S200 on an object to be deposited, in the first sputtering process S100, the edges of the object to be deposited can be deposited relatively thicker than its center, and in the second sputtering process S200, the center of the object to be deposited can be deposited relatively thicker than its edges, thereby improving the overall deposition uniformity on the object to be deposited.

[0128] Here, it is preferable to perform the second sputtering process S200 after performing the first sputtering process S100, so as to easily adapt the deposition thickness on the object to be deposited to the predetermined thickness.

[0129] Here, the second sputtering process S200 can be performed with the second arm 122 rotating at a slower speed than the first arm 121. That is, by allowing the second arm 122 to have a slower rotational speed than the first arm 121, the rotational path of the first magnet assembly 131 can be adjusted to a helical rotational path. The rotational path (or helical rotational path) set by the helical rotational path can increase the deposition rate at the center of the object to be deposited. Since the deposition rate at the edges of the object to be deposited is higher in the first sputtering process S100, the deposition rate at the center of the object to be deposited can be increased in the second sputtering process S200 by means of the helical rotational path compared to the first sputtering process S100. Therefore, the overall deposition uniformity on the object to be deposited can be improved.

[0130] A third arm 123, having one side connected to the second magnet assembly 132, can be positioned on the other side of the first arm 121. When the second magnet assembly 132 is included in addition to the first magnet assembly 131, the second magnet assembly 132 can be responsible for depositing the edges of the object to be deposited to compensate for the deposition rate at the edges of the object (which are typically deposited relatively thinner). Therefore, by addressing the limitation that the edges of the object to be deposited are deposited thinner than the center, the deposition uniformity on the object to be deposited can be improved even without additional sputtering processes.

[0131] The first sputtering process S100 can be performed while the first arm 121 and the second arm 122 are rotating, with the third arm 123 fixed to the first arm 121. For example, when the third arm 123 is positioned in the extending direction of the first arm 121, the third arm 123 may not rotate, and the second magnet assembly 132 may be positioned corresponding to the edge of the sputtering target 30 and spaced apart from the rotation axis 11.

[0132] When the second arm 122 and the third arm 123 rotate, and the owners of the first magnet assembly 131 and the second magnet assembly 132 are positioned corresponding to the central portion of the sputtering target 30, a repulsive force (or reaction force) may be generated between the outer magnet portion 131b of the first magnet assembly 131 and the outer magnet portion 132b of the second magnet assembly 132, which have the same polarity. This repulsive force may cause abnormal driving of the first magnet assembly 131 and / or the second magnet assembly 132, and cause the first magnet assembly 131 and / or the second magnet assembly 132 to deviate from the set rotation path.

[0133] However, when the third arm 123 is fixed to the other side of the first arm 121, and the second magnet assembly 132 is spaced apart from the rotation axis 11 and positioned corresponding to the edge of the sputtering target 30, the owners of the first magnet assembly 131 and the second magnet assembly 132 may not be positioned corresponding to the center portion of the sputtering target 30 and may be positioned close to the rotation axis 11. Therefore, abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 caused by the repulsive force (or reaction force) between the first magnet assembly 131 and the second magnet assembly 132 can be prevented, and deviation of the first magnet assembly 131 and the second magnet assembly 132 from the set rotation path can be prevented.

[0134] Furthermore, when the second magnet assembly 132 is spaced apart from the rotation axis 11 and positioned corresponding to the edge of the sputtering target 30, the second magnet assembly 132 can be responsible for depositing the edge of the object to be deposited to compensate for the deposition rate of the edge of the object to be deposited (which is typically deposited relatively thin). Therefore, by addressing the limitation that the edge of the object to be deposited is thinner than the center, the deposition uniformity on the object to be deposited can be improved even without additional sputtering processes. Furthermore, when the edge of the object to be deposited is deposited separately from the center, the (process) time for (primarily) depositing the edge of the object to be deposited can be reduced.

[0135] The first sputtering process S100 or the second sputtering process S200 can be performed by distinguishing the rotation start positions of the first magnet assembly 131 and the second magnet assembly 132. That is, the first magnet assembly 131 may have a rotation start position different from the rotation start position of the second magnet assembly 132. For example, the first magnet assembly 131 may have a rotation start position corresponding to the edge of the sputtering target 30, and the second magnet assembly 132 may have a rotation start position corresponding to the center portion of the sputtering target 30. Here, the second arm 122 may have the same rotation speed as the third arm 123. In this case, when the first magnet assembly 131 is disposed corresponding to the center portion of the sputtering target 30 and close to the rotation axis 11, the second magnet assembly 132 may be disposed corresponding to the edge of the sputtering target 30 and spaced apart from the rotation axis 11. Therefore, abnormal driving of the first magnet assembly 131 and the second magnet assembly 132 caused by the repulsive force between the first magnet assembly 131 and the second magnet assembly 132 can be prevented, and the first magnet assembly 131 and the second magnet assembly 132 can be prevented from deviating from the set rotation path.

[0136] Furthermore, the first sputtering process S100 or the second sputtering process S200 can be performed simultaneously while the second arm 122 and the third arm 123 rotate at different speeds. When the second rotating body 142 has the same rotational speed as the third rotating body 143, the first magnet assembly 131 and the second magnet assembly 132 may meet once at the center of the sputtering target 30 each time the second rotating body 142 and the third rotating body 143 rotate once, and the number of times the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 may increase. However, when the second rotating body 142 has a different rotational speed than the third rotating body 143, the number of times the first magnet assembly 131 meets the second magnet assembly 132 at the center of the sputtering target 30 may decrease, and the number of times the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 may decrease. That is, it can prevent abnormal driving of the first magnet assembly 131 and the second magnet assembly 132, as well as prevent the first magnet assembly 131 and the second magnet assembly 132 from deviating from the set rotation path. In addition, since the second arm 122 has a different rotation speed than the third arm 123, the time that the first magnet assembly 131 and the second magnet assembly 132 are adjacent may be relatively reduced, and the repulsive force generated between the first magnet assembly 131 and the second magnet assembly 132 may be relatively reduced.

[0137] The sputtering method according to an exemplary embodiment may further include a process S50 of positioning each of the first arm 121 and the second arm 122 at a reference position.

[0138] In process S50, each of the first arm 121 and the second arm 122 can be positioned at a reference position. Since each of the first arm 121 and the second arm 122 is positioned at the reference position before the sputtering process begins, for each sputtering process (or each object to be deposited), the sputtering process can begin at the same rotation start position (i.e., reference position) of the first magnet assembly 131 and / or the second magnet assembly 132. Therefore, sputtering uniformity between sputtering processes (or between objects to be deposited) can be increased. For example, the reference position detection unit 160 can detect the reference position of each of the first arm 121 and the second arm 122. This allows the rotation start position and rotation end position of the first magnet assembly 131 and / or the second magnet assembly 132 to be checked. Therefore, for each sputtering process, the process can begin when the first magnet assembly 131 and / or the second magnet assembly 132 is positioned at the rotation start position and terminated at the rotation end position. Furthermore, the start and end positions of rotation of the first magnet assembly 131 and / or the second magnet assembly 132 can be determined according to the type of target material. Therefore, sputtering uniformity between sputtering processes can be increased, and deposition uniformity can be ensured regardless of the type of target material.

[0139] The sputtering method according to an exemplary embodiment may further include a process S40 of determining the rotation path of the first magnet assembly 131 based on the object to be deposited.

[0140] In process S40, the rotation path of the first magnet assembly 131 can be determined according to the object to be deposited. The rotation path of the first magnet assembly 131 can be determined according to the object to be deposited, and the object to be deposited can be changed according to the purpose of sputtering. That is, the rotation path of the first magnet assembly 131 can be determined according to the purpose of sputtering, and the control unit (not shown) can determine the rotation path of the first magnet assembly 131 according to the object to be deposited (or the purpose of sputtering).

[0141] For example, when a deposition substrate is used as the object to be deposited for performing a deposition process on the substrate, the rotation path of the first magnet assembly 131 can be determined as a radiation rotation path, so that uniform (or highly uniform) sputtering is performed over the entire area of ​​the sputtering target 30.

[0142] Furthermore, a cleaning process can be performed on the sputtering target 30 to remove contaminants from its surface. For example, when a small first magnet assembly 131 smaller than the sputtering target 30 is used, a large number of impurities or sputtered particles may deposit on the non-sputtering region at the center (central portion) of the sputtering target 30. Because an excessive number of particles are generated in the chamber (not shown) due to the formation of a thickened film that does not easily attach to the substrate target, or because these particles (or contaminants) fall onto the deposition substrate, the material deposited at the center (central portion) of the sputtering target 30 may not be easily sputtered again and stripped from the sputtering target 30. Therefore, a cleaning process can be performed on the sputtering target 30, and a dummy substrate can be provided to the object to be deposited to remove impurities or sputtered particles deposited at the center (or central portion) of the sputtering target 30.

[0143] When a dummy substrate disposed on the object to be deposited is used to clean the sputtering target 30, the rotation path of the first magnet assembly 131 can be determined as a helical rotation path with a helical rotation orbit. In this case, sputtered material (or sputtered particles) or impurities deposited at the central portion of the sputtering target 30 can be effectively sputtered and removed. Here, the sputtered material sputtered and removed from the central portion of the sputtering target 30 can be deposited onto the dummy substrate.

[0144] Therefore, according to the exemplary embodiment, the sputtering apparatus 100 can apply the rotational speed difference between the outer rotation axis 111 and the inner rotation axis 112 and adjust (or change) the rotational trajectory of the first magnet assembly 131 and / or the second magnet assembly 132 by a control unit (not shown), thereby setting the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132. Here, the rotational path of the first magnet assembly 131 and / or the second magnet assembly 132 can be determined according to the object to be deposited, and sputtering suitable for the object to be deposited can be performed.

[0145] Furthermore, the sputtering method according to the exemplary embodiment may also include a process S45 of determining the rotation path of the second magnet assembly 132 based on the object to be deposited. The rotation path of the second magnet assembly 132 can be determined by adjusting the rotation trajectory of the second magnet assembly 132 according to the object to be deposited using a method similar to (or the same as) that used for the first magnet assembly 131.

[0146] As described above, according to the exemplary embodiment, the rotation trajectory of the magnet assembly can be precisely controlled by independently controlling the rotation of each of the outer and inner rotation axes, thereby improving the deposition uniformity on the object to be deposited. Furthermore, even using a small magnet assembly, the entire area of ​​the sputtering target can be covered, and deposition uniformity can be ensured regardless of the type of target material. Moreover, since the rotation trajectory of the magnet assembly is adjusted by differentiating the rotation speeds of the outer and inner rotation axes, the rotation path of the magnet assembly can be set, determined according to the object to be deposited, and sputtering suitable for the object can be performed. Furthermore, since the sputtering process is divided into two processes based on time to control the difference in rotation speed between the outer and inner rotation axes differently, the sputtering process can be performed by distinguishing the main area as the edge and center of the object to be deposited in the first and second halves of the process, thus further improving the deposition uniformity on the object to be deposited. Additionally, the reference position of each of the first and second arms can be detected by a reference position detection unit. This allows for the checking of the start and end positions of the magnet assembly's rotation, and each process can begin when the magnet assembly is positioned at the start and end of its rotation. This improves sputtering uniformity between processes. Furthermore, two magnet assemblies can be used by adding a second magnet assembly symmetrical to the first magnet assembly to compensate for the deposition rate at the edges of the object to be deposited (which are typically deposited relatively thinly). This improves deposition uniformity on the object and reduces the process time primarily spent depositing at the edges of the object.

[0147] The sputtering apparatus according to an exemplary embodiment can precisely control the rotational trajectory of the magnet assembly (or the first magnet assembly) by independently controlling each of the outer and inner rotation axes, thereby improving the deposition uniformity on the object to be deposited (or the substrate). Furthermore, even by using a small magnet assembly, the entire area of ​​the sputtering target can be covered, and deposition uniformity can be ensured regardless of the type of target material.

[0148] Furthermore, since the rotational trajectory of the magnet assembly is adjusted by distinguishing the rotational speeds of the outer and inner rotational axes, the rotational path of the magnet assembly can be set, the rotational path of the magnet assembly can be determined according to the object to be deposited (or the purpose of sputtering), and sputtering suitable for the object to be deposited can be performed.

[0149] Furthermore, since the sputtering process is divided into two processes based on time to control the difference in rotational speed between the outer and inner rotational axes differently, the sputtering process can be performed by dividing the main area into the edge and center of the object to be deposited in the first and second halves of the process, thereby further improving the deposition uniformity on the object to be deposited.

[0150] Furthermore, the reference position of each of the first and second arms can be detected by a reference position detection unit. This allows for checking the start and end positions of the magnet assembly's rotation, and for each process, the process can be started when the magnet assembly is positioned at the start of rotation and ends at the end of rotation. Therefore, sputtering uniformity between processes can be improved.

[0151] Furthermore, two magnet assemblies can be used by adding a second magnet assembly symmetrical to the first magnet assembly to compensate for the deposition rate at the edges of the object to be deposited (which are typically deposited relatively thinly). This improves deposition uniformity on the object and reduces the process time primarily spent depositing at the edges of the object.

[0152] Although exemplary embodiments of the invention have been described, it should be understood that the invention should not be limited to these exemplary embodiments, but rather that various changes and modifications can be made by those skilled in the art within the spirit and scope of the invention as claimed above. Therefore, the true scope of protection of the invention will be determined by the scope of the appended claims.

Claims

1. A sputtering apparatus, comprising: The outer rotating shaft has a tubular shape; An inner rotating shaft is disposed in the hollow portion of the outer rotating shaft to rotate independently of the outer rotating shaft; The first arm is connected to one of the outer and inner rotating shafts, and rotates around the one rotating shaft by the rotation of the one rotating shaft; The second arm is disposed on one side of the first arm, and rotates around one side of the first arm by rotating the outer rotation axis and the other rotation axis of the inner rotation axis. as well as The first magnet assembly is connected to one side of the second arm. The sputtering apparatus further includes a control unit configured to independently control the rotation of each of the outer and inner rotating axes to adjust the rotational speed of each of the first and second arms. The control unit divides the process into two parts, a first half and a second half, based on time. The control unit controls: The outer rotating shaft and the inner rotating shaft have the same rotational speed in the first half of the process; and The outer rotating shaft and the inner rotating shaft have different rotational speeds in the latter half of the process.

2. The sputtering apparatus according to claim 1, further comprising: A first rotating body is connected to another rotating shaft and rotates by the rotation of the other rotating shaft; as well as The second rotating body is connected to the second arm and rotates by the rotational force transmitted from the first rotating body, so that the second arm can rotate.

3. The sputtering apparatus according to claim 1, further comprising: The first magnet counterweight is connected to the other side of the second arm; as well as A counterweight is attached to the other side of the first arm.

4. The sputtering apparatus according to claim 3, wherein the counterweight has a weight greater than the weight of the first magnet counterweight.

5. The sputtering apparatus according to claim 1, further comprising: The third arm is located on the other side of the first arm; The second magnet assembly is connected to one side of the third arm; The first magnet counterweight is connected to the other side of the second arm; as well as The second magnet counterweight is connected to the other side of the third arm.

6. The sputtering apparatus of claim 5, wherein the third arm is fixed to the other side of the first arm.

7. The sputtering apparatus of claim 5 further comprises a third rotating body connected to the third arm and rotating by a rotational force transmitted from the first rotating body. The third arm rotates around the other side of the first arm as the third rotating body rotates.

8. The sputtering apparatus of claim 1, wherein the control unit changes the rotational trajectory of the first magnet assembly by controlling the rotational speed of each of the outer and inner rotational axes.

9. The sputtering apparatus of claim 8, wherein the control unit determines the rotation path of the first magnet assembly based on the object to be deposited.

10. The sputtering apparatus of claim 1, further comprising a reference position detection unit configured to detect a reference position of each of the first arm and the second arm.

11. The sputtering apparatus of claim 10, wherein the control unit arranges each of the first arm and the second arm to the reference position before the process begins.

12. A sputtering method, comprising: The first sputtering is performed while the first arm is able to rotate at the same speed. The first arm is connected to one of the outer and inner rotation axes, each of which rotates independently and about the one rotation axis. The second arm has one side connected to the first magnet assembly and rotates about one side of the first arm by the rotation of the other rotation axis of the outer and inner rotation axes. as well as The second sputtering is performed while simultaneously allowing the first and second arms to rotate at different speeds. During the execution of the first sputtering and the execution of the second sputtering, The rotation of each of the outer and inner rotation axes is controlled independently to adjust the rotational speed of each of the first and second arms. The process is divided into two parts based on time: a first part and a second part. The first sputtering is performed in the first half of the process, during which the outer and inner rotating axes rotate at the same speed. The second sputtering is performed in the latter part of the process, wherein the outer and inner rotating shafts rotate at different speeds during the second sputtering.

13. The sputtering method of claim 12, wherein the second sputtering is performed when the second arm has a rotational speed slower than that of the first arm.

14. The sputtering method of claim 12, wherein a third arm is provided on the other side of the first arm, one side of which is connected to the second magnet assembly.

15. The sputtering method according to claim 14, wherein the first sputtering is performed while the first arm and the second arm are rotating in the state where the third arm is fixed to the first arm.

16. The sputtering method of claim 14, wherein the first sputtering or the second sputtering is performed by distinguishing the rotation start positions of the first magnet assembly and the second magnet assembly.

17. The sputtering method of claim 12, further comprising arranging each of the first arm and the second arm in a reference position.

18. The sputtering method of claim 12, further comprising determining the rotation path of the first magnet assembly based on the object to be deposited.

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