A heat dissipation structure and method for high-efficiency integrated semiconductor power devices

Abstract

The application relates to a heat dissipation structure and method of a high-efficiency integrated semiconductor power device, and the heat dissipation structure comprises a device body, the device body is arranged in a ring-shaped tubular structure, a heat dissipation flow channel is formed in the ring-shaped center of the device body, and cooling fluid continuously flows in the heat dissipation flow channel; and a heat dissipation metal surface is arranged on the ring-shaped inner wall of the device body. The heat dissipation method comprises the following steps: arranging the device body in a ring-shaped tubular structure, forming a heat dissipation flow channel in the ring-shaped center of the device body, continuously flowing cooling fluid in the heat dissipation flow channel, and using the cooling fluid to cool the device body; and arranging a heat dissipation metal surface on the ring-shaped inner wall of the device body, so that the temperature of the device body is reduced after the cooling fluid flows through the heat dissipation flow channel and contacts the heat dissipation metal surface. The heat dissipation structure of the semiconductor power device has the characteristics of high heat dissipation efficiency, long device service life, high reliability and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electronic technology, in particular to a heat dissipation structure and method of high-efficiency integrated semiconductor power device. BACKGROUND

[0002] Semiconductor power devices, also known as electronic power devices, are used for power processing and are a kind of semiconductor devices with the ability to handle high voltage and large current. With the rapid development of semiconductor power devices, their application range is becoming more and more extensive, such as in the fields of computers, communications, consumer electronics, automotive electronics, etc.

[0003] With the acceleration of the new energy strategy layout and development process of countries around the world, the development of hydrogen fuel cells is rapid. In recent years, hydrogen fuel cells have developed rapidly in the direction of new energy vehicles, and have gradually entered the stage of scaling and marketization. Especially in the direction of commercial vehicles, combined with the layout of the national new energy strategy, the development is particularly rapid. From small logistics vehicles to heavy trucks and tractors, from the original 30KW to the current 120KW, 240KW, or even larger power. At this time, the efficiency loss of high-power converters gradually increases, such as air compressor controllers and high-voltage DC / DC converters, which reduces the available power of the system and also causes huge energy waste. Due to the long and frequent use of fuel cell systems for vehicles, it is urgent to reduce the energy loss of high-power converters.

[0004] A heat dissipation structure and installation method based on a power semiconductor device are disclosed in Chinese Patent No. CN111081661A. The heat dissipation structure includes a power semiconductor device, a circuit board, an insulating layer, a heat sink, and a fixing assembly. At least two openings are provided on the circuit board, and at least two corresponding fixing assemblies are provided in the at least two openings. One end of the fixing assembly extends to one side of the circuit board, and the extended part of the at least two fixing assemblies clamps and fixes the power semiconductor device. The extended part of the fixing assembly is also embedded in one surface of the heat sink, so that the power semiconductor device is fixed by the circuit board and the heat sink. The insulating layer is in contact with the power semiconductor device and the heat sink. In this way, the power semiconductor device is clamped and fixed on one side of the circuit board, which increases the heat dissipation area, is beneficial to the heat dissipation of the power semiconductor device, and avoids the burning of the power semiconductor device or the circuit board due to leakage.

[0005] At present, the semiconductor device is basically the same as the scheme disclosed in the above patent, adopts single-sided heat dissipation, and the heat dissipation surface is in contact with the heat dissipation surface through surface mounting welding or bolt fixing for heat dissipation. Although heat dissipation can be achieved, the device has a small heat dissipation area, low thermal conductivity, high temperature rise, high safety design redundancy for reliability and safety, low efficiency, simultaneous increase in the number of devices, and reduced device size and power density. The cost of high-power products using the device will also increase accordingly. Due to the increase in temperature, the thermal life and reliability of the device will be reduced, and the risk of device overheating and explosion will also increase (multiple parallel power supply topologies can cause other devices to possibly explode). SUMMARY

[0006] The present application mainly solves the technical problems of low heat dissipation efficiency, short service life and poor reliability of the semiconductor power device in the prior art, and provides a high-efficiency integrated semiconductor power device heat dissipation structure and method.

[0007] In order to solve the above technical problems and achieve the above application purposes, the present application provides a high-efficiency integrated semiconductor power device heat dissipation structure, comprising:

[0008] A device body is provided in a ring-shaped tubular structure, and a heat dissipation flow channel is formed in the center of the ring-shaped device body, and cooling fluid continuously flows in the heat dissipation flow channel;

[0009] A heat dissipation metal surface is provided on the inner wall of the ring-shaped device body.

[0010] In an embodiment, a liquid inlet pipe is fixedly connected to a first end of the device body, and a liquid outlet pipe is fixedly connected to a second end of the device body, and the liquid inlet pipe and the liquid outlet pipe are in communication with the metal heat dissipation flow channel.

[0011] In an embodiment, the liquid inlet pipe and the device body are integrally formed, and the liquid outlet pipe and the device body are integrally formed.

[0012] In an embodiment, the thermal conductivity of the metal in the heat dissipation metal surface is 16 W / m.K, and the yield strength is not less than 205 Mpa.

[0013] In an embodiment, the metal is one of copper alloy, stainless steel and titanium alloy.

[0014] In an embodiment, further comprising:

[0015] A connecting piece is sleeved on the device body, and the inner wall of the connecting piece is fixed to the outer wall of the device body.

[0016] The power pins are provided in plurality, and the plurality of power pins are fixed on the connecting piece and electrically connected with the connecting piece.

[0017] In an implementation, the connecting piece is further provided with a driving switch for transmitting or receiving a power driving signal.

[0018] In another aspect of the present application, a heat dissipation method for a high-efficiency integrated semiconductor power device is provided, and the method comprises:

[0019] The device body is provided in a ring-shaped tubular structure, a ring-shaped center of the device body forms a heat dissipation flow channel, and a cooling fluid is continuously flowed in the heat dissipation flow channel and used for cooling the device body.

[0020] A heat dissipation metal surface is arranged on an inner ring wall of the device body, and the temperature of the device body is reduced after the cooling fluid flows through the heat dissipation flow channel and contacts the heat dissipation metal surface.

[0021] In an implementation, a liquid inlet pipe is fixedly connected to a first end of the device body, a liquid outlet pipe is fixedly connected to a second end of the device body, the cooling fluid enters through the liquid inlet pipe, passes through the heat dissipation flow channel, and flows out through the liquid outlet pipe.

[0022] In an implementation, a connecting piece is arranged on an outer ring wall of the device body, a power pin is arranged on the connecting piece, a first end of the power pin is electrically connected with the connecting piece, and a second end of the power pin is connected with a circuit board, so as to realize the communication between the semiconductor power device and the circuit board.

[0023] Compared with the prior art, the heat dissipation structure for the high-efficiency integrated semiconductor power device has the following beneficial effects:

[0024] 1. The device body provided in the ring-shaped structure and the heat dissipation metal surface arranged on the inner ring wall of the device body can increase the heat dissipation efficiency by more than one time.

[0025] 2. The overcurrent capacity of the semiconductor power device can be greatly improved, and the device quality, volume power density and working frequency can be improved, and the inductance volume of the power supply product using the device can be reduced, the number of devices used can be reduced, and the material application cost can be reduced.

[0026] 3. After the heat dissipation capacity of the semiconductor power device is improved, the thermal life and reliability of the device can also be greatly improved.

[0027] 4. The heat dissipation structure for the high-efficiency integrated semiconductor power device can be applied to the power supply products of various types of electronic devices.

[0028] 5. The heat dissipation structure for the high-efficiency integrated semiconductor power device can be applied to the power supply products of various types of electronic devices.

[0029] 6. The heat dissipation structure for the high-efficiency integrated semiconductor power device can be applied to the power supply products of various types of electronic devices.

[0030] Therefore, the application has the characteristics of high heat dissipation efficiency, long device life, high reliability and the like. BRIEF DESCRIPTION OF DRAWINGS

[0031] BRIEF DESCRIPTION OF DRAWINGS Fig. 1 is a schematic diagram of a heat dissipation structure of a high-efficiency integrated semiconductor power device of the application;

[0032] BRIEF DESCRIPTION OF DRAWINGS Fig. 2 is a sectional view of a heat dissipation structure of a high-efficiency integrated semiconductor power device of the application.

[0033] In the figure, 1 is a device body; 11 is a heat dissipation flow channel; 2 is a metal heat dissipation surface; 3 is an inlet pipe; 4 is an outlet pipe; 5 is a connecting piece; and 6 is a power pin. DETAILED DESCRIPTION

[0034] In order to make the objectives, characteristics and advantages of the application more obvious and easy to understand, the technical solutions in the embodiments of the application will be described clearly and completely below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only some of the embodiments of the application, but not all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the application.

[0035] Embodiment:

[0036] Figs. 1-2 An embodiment of a heat dissipation structure of a high-efficiency integrated semiconductor power device of the application is shown.

[0037] As shown in Fig. 1 , Fig. 2 is a schematic diagram of a heat dissipation structure of a high-efficiency integrated semiconductor power device provided by the embodiment of the application, and the heat dissipation structure comprises:

[0038] The device body 1 is arranged in a ring-shaped tubular structure, and the cross section perpendicular to the axial direction of the device body 1 is elliptical. The center of the ring-shaped device body 1 is hollow, thereby forming a heat dissipation flow channel 11. Cooling fluid continuously flows in the heat dissipation flow channel 11, and the cooling fluid functions to cool the device body 1. For example, the cooling fluid can be cooling liquid, cooling gas or the like, and the application does not make specific limitation on the cooling fluid.

[0039] The annular inner wall of the device body 1 is provided with a metal heat dissipation surface 2, the thermal conductivity of the metal is not less than 16 W / m.K, and the yield strength of the metal is not less than 205 Mpa, for example, the metal can be selected from one of copper alloy, stainless steel, titanium alloy, in principle, as long as the thermal conductivity and yield strength of the metal can meet the above conditions, it is not limited to copper alloy, stainless steel, or titanium alloy. Compared with the prior art, the present application sets the metal heat dissipation surface 2 on the annular inner wall of the device body 1. First, the area of the metal heat dissipation surface 2 is large, which can improve the heat dissipation intensity of the device body 1. In addition, due to the annular internal hollow of the device body 1, the heat dissipation intensity of the device body 1 can be further improved.

[0040] The device body 1 includes a first end and a second end, the first end of the device body 1 is fixedly connected with the liquid inlet pipeline 3, the second end of the device body 1 is connected with the liquid outlet pipeline 4, and the liquid inlet pipeline 3 and the liquid outlet pipeline 4 are communicated with the heat dissipation flow channel 11. The liquid inlet pipeline 3 and the liquid outlet pipeline 4 can be of the same metal material as the device body 1 and be integrally formed with the device body 1, so as to ensure the sealing of the connection between the liquid inlet pipeline 3 and the first end of the device body 1 and the connection between the liquid outlet pipeline 4 and the second end of the device body 1. The liquid inlet pipeline 3 and the liquid outlet pipeline 4 can also be pipelines made of high polymer materials, such as Teflon, polytetrafluoroethylene, etc. The present application does not make specific limitation on the material of the liquid inlet pipeline 3 and the liquid outlet pipeline 4, as long as the cooling fluid does not damage its performance. Taking the cooling fluid as a cooling liquid as an example, the cooling liquid enters the heat dissipation flow channel 11 through the liquid inlet pipeline 3, absorbs the heat of the device body 1, and the temperature of the cooling liquid gradually rises, while the temperature of the device body 1 gradually decreases. The heated cooling liquid is discharged through the liquid outlet pipeline 4. In order to recycle the cooling liquid, the cooling liquid can be cooled again and then enter the heat dissipation flow channel 11 through the liquid inlet pipeline 3 to cool the device body 1.

[0041] The annular outer wall of the device body 1 is sleeved with a connecting piece 5, the connecting piece 5 is in an annular structure, and the inner wall of the connecting piece 5 is fixed with the annular outer wall of the device body 1. A plurality of power pins 6 are arranged on the connecting piece 5, one end of the power pin 6 is fixed on the connecting piece 5 and is electrically connected with the connecting piece 5, and the other end of the power pin 6 is a free end, and the free end of the power pin 6 is used to be connected with a circuit board. By arranging the power pin 6, the communication between the device body 1 and the circuit board can be realized. In addition, it should be noted that the number of power pins 6 and the fixed position of the power pins 6 on the connecting piece 5 are determined according to the purpose of the semiconductor power device, and the present application does not make specific limitation thereon.

[0042] The connecting piece 5 is also provided with a driving switch, which is used to send or receive a power driving signal.

[0043] In the above scheme of the present application, when the semiconductor power device is working, the power pin 6 is first communicated with the circuit board, and the temperature of the semiconductor power device gradually increases during the working process. The cooling fluid enters the heat dissipation flow channel 11 through the liquid inlet pipe 3, and the cooling fluid continuously absorbs the heat of the semiconductor power device, thereby cooling the semiconductor power device. Since the semiconductor power device is arranged in a ring structure, and the inner wall of the ring is further provided with a metal heat dissipation surface 2, the heat dissipation efficiency of the present application can be theoretically increased by more than one time, and the over-current capacity of the semiconductor power device can be greatly improved, the quality, volume power density and working frequency of the device are improved, the inductance volume of the power supply product using the device is reduced, the number of devices used is reduced, and the material application cost is reduced. In addition, the thermal life and reliability of the device can also be greatly improved after the heat dissipation capacity is improved.

[0044] An embodiment of the present application also provides a heat dissipation method for high-efficiency integrated semiconductor power devices, which comprises:

[0045] The device body 1 is arranged in a ring-shaped tubular structure, and the ring-shaped center of the device body 1 forms a heat dissipation flow channel 11, and the cooling fluid is used to cool the device body 1.

[0046] A heat dissipation metal surface is arranged on the inner wall of the ring-shaped device body 1, and when the heat dissipation fluid flows through the heat dissipation flow channel 11 and contacts the heat dissipation metal surface, the temperature of the device body 1 is reduced.

[0047] In an example, the first end of the device body 1 is fixedly connected with a liquid inlet pipe 3, and the second end of the device body 1 is fixedly connected with a liquid outlet pipe 4, and the heat dissipation fluid enters through the liquid inlet pipe 3, passes through the heat dissipation flow channel 11, and flows out through the liquid outlet pipe 4.

[0048] A connecting piece 5 is arranged on the outer wall of the ring-shaped device body 1, and a power pin 6 is arranged on the connecting piece 5, and the first end of the power pin 6 is electrically connected with the connecting piece 5, and the second end of the power pin 6 is connected with a circuit board, thereby realizing the communication between the semiconductor power device and the circuit board.

[0049] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. Also, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0050] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0051] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A heat dissipation structure for high efficiency integrated semiconductor power devices, characterized by, The utility model relates to a semiconductor power device cooling device, including: Device body (1), the device body (1) is arranged as annular tubular structure, and the annular center of device body (1) forms heat dissipation flow channel (11), and the cooling fluid is constantly flowed in heat dissipation flow channel (11); Heat dissipation metal surface, the heat dissipation metal surface is arranged on the annular inner wall of device body (1); The first end of device body (1) is fixedly connected with liquid inlet pipe (3), and the second end of device body (1) is fixedly connected with liquid outlet pipe (4), and liquid inlet pipe (3) and liquid outlet pipe (4) are communicated with heat dissipation flow channel (11); Connecting piece (5) is sleeved on device body (1), and the inner wall of connecting piece (5) is fixed with the outer wall of device body (1); Power pin (6) is arranged with multiple, and multiple power pin (6) is fixed on connecting piece (5) and is electrically connected with connecting piece (5).

2. The heat dissipating structure according to claim 1, wherein Liquid inlet pipe (3) and device body (1) are integrally formed, and liquid outlet pipe (4) and device body (1) are integrally formed.

3. The heat dissipating structure according to claim 1 or 2, characterized by, The thermal conductivity of the metal in the heat dissipation metal surface is not less than 16 W / m.K, and the yield strength is not less than 205 Mpa.

4. The heat dissipating structure according to claim 3, wherein The metal is one of copper alloy, stainless steel and titanium alloy.

5. The heat dissipating structure according to claim 1, wherein The connecting piece (5) is further provided with a drive switch for transmitting or receiving a power drive signal.

6. A heat dissipation method for a high-efficiency integrated semiconductor power device, the semiconductor power device comprising the heat dissipation structure according to claim 1, characterized in that, The method comprises: Device body (1) is arranged as annular tubular structure, the annular center of device body (1) forms heat dissipation flow channel (11), and the cooling fluid is constantly flowed in heat dissipation flow channel (11), and the cooling fluid is used to cool device body (1); Heat dissipation metal surface is arranged on the annular inner wall of device body (1), and when the cooling fluid flows through heat dissipation flow channel (11) and contacts heat dissipation metal surface, the temperature of device body (1) is reduced.

7. The heat dissipation method according to claim 6, wherein The first end of device body (1) is fixedly connected with liquid inlet pipe (3), and the second end of device body (1) is fixedly connected with liquid outlet pipe (4), and the cooling fluid enters through liquid inlet pipe (3), passes through heat dissipation flow channel (11) and flows out through liquid outlet pipe (4).

8. The heat dissipation method according to claim 7, wherein, Connecting piece (5) is arranged on the annular outer wall of device body (1), and power pin (6) is arranged on connecting piece (5), the first end of power pin (6) is electrically connected with connecting piece (5), the second end of power pin (6) is connected with circuit board, and the communication of semiconductor power device and circuit board is realized.

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