Display panel, manufacturing method of display panel, and display device

Abstract

The application provides a display panel, a manufacturing method of the display panel and a display device, which comprise a substrate and a pixel driving circuit, each pixel driving circuit comprising a TFT and a first passivation layer; a plurality of light emitting elements arranged on the first passivation layer, each light emitting element being electrically connected to the TFT of the corresponding pixel driving circuit through a pixel electrode; and a first light shielding layer provided with a plurality of openings to expose and surround the plurality of light emitting elements; a plurality of protrusions are formed on the side of the first light shielding layer away from the first passivation layer, the distance between the top of the protrusion and the passivation layer is less than the distance between the light emitting element and the passivation layer, the light rays incident on the first light shielding layer are reflected at the protrusions, thereby being absorbed by the protrusions multiple times, the light absorption capacity of the first light shielding layer for the light rays of the light emitting diode is increased, the problem that the light rays of the light emitting diode pass through the first light shielding layer to affect the TFT is solved, and the influence of the light rays on the electrical characteristics of the TFT is effectively reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel, a manufacturing method of the display panel and a display device. BACKGROUND

[0002] Micro LED (micro light-emitting diode) is considered as the most potential new display technology due to its superior display effect, and oxide semiconductor device (TFT, thin film transistor) is the best choice for large-size Micro LED display device due to its excellent uniformity, high mobility and low leakage current. However, the light stability of oxide semiconductor device is poor, and the electrical characteristics of the device will drift under continuous light, so how to reduce the influence of LED (light-emitting diode) light source on TFT is a problem to be solved in the development process of Micro LED technology.

[0003] Currently, the industry has tried to increase the top light shielding layer to reduce the influence of light, but after uniformly coating the light shielding layer material, part of the light will still pass through the light shielding layer and affect the TFT device, which will still cause the electrical characteristics of the TFT device to drift. Therefore, how to prevent light from passing through the light shielding layer material has become a problem to be solved. SUMMARY

[0004] The present application provides a display panel, a manufacturing method of the display panel and a display device to solve the problem that after setting the light shielding layer, the LED light can still pass through the light shielding layer and affect the TFT.

[0005] To solve the above problems, the technical scheme provided by the present application is as follows:

[0006] A display panel, comprising:

[0007] a substrate;

[0008] a pixel driving circuit layer located on the substrate, comprising a plurality of pixel driving circuits, each pixel driving circuit comprising a TFT and a first passivation layer formed on the TFT;

[0009] a plurality of light emitting elements arranged on the first passivation layer, each light emitting element being electrically connected to the TFT of the corresponding pixel driving circuit through a pixel electrode;

[0010] a first light shielding layer formed on the first passivation layer and provided with a plurality of openings to expose and surround a plurality of light emitting elements;

[0011] The first light-shielding layer has a plurality of protrusions formed on a side thereof facing away from the first passivation layer, and the protrusions have a top part with a distance to the first passivation layer smaller than a distance between the light-emitting element and the first passivation layer.

[0012] According to a preferred embodiment of the present application, the cross-sectional shape of the connecting surface between two adjacent protrusions comprises one or more of a V shape, a U shape and a W shape.

[0013] According to a preferred embodiment of the present application, the protrusions are in a long strip shape, and the two end parts of the long strip shape extend to the two boundaries of the first light-shielding layer, respectively.

[0014] According to a preferred embodiment of the present application, a second light-shielding layer is further formed on the substrate, and the TFT structure layer is formed on the second light-shielding layer, and the second light-shielding layer partially overlaps the first light-shielding layer.

[0015] According to a preferred embodiment of the present application, the thickness of the protrusions ranges from 100 nm to 300 nm.

[0016] According to a preferred embodiment of the present application, the light-emitting element is a micro light-emitting diode.

[0017] According to a preferred embodiment of the present application, the part of the first light-shielding layer close to the light-emitting element is provided with more protrusions than the part of the first light-shielding layer away from the light-emitting element.

[0018] The present application further provides a manufacturing method of a display panel, comprising:

[0019] forming a second light-shielding layer on the substrate;

[0020] forming an insulating layer on the second light-shielding layer;

[0021] forming a TFT on the insulating layer;

[0022] forming a first passivation layer on the TFT and patterning the first passivation layer to form a first opening;

[0023] forming a pixel electrode on the first passivation layer to be exposed to the first opening;

[0024] forming a second passivation layer on the first passivation layer, forming a first light-shielding layer on the second passivation layer, and patterning the first light-shielding layer and the second passivation layer to form a second opening;

[0025] etching a side of the first light-shielding layer facing away from the first passivation layer to form a plurality of protrusions

[0026] forming a light-emitting element on the pixel electrode, the light-emitting element being electrically connected to the pixel electrode and exposed to the second opening.

[0027] The present invention also provides a display device, comprising a display panel as described in any of the preceding claims or a display panel manufactured using the above-described manufacturing method.

[0028] The beneficial effects of the present invention are as follows: By setting multiple protrusions on the first light-shielding layer, the light emitted by the light-emitting diode towards the first light-shielding layer is reflected multiple times at the protrusions and thus absorbed multiple times by the protrusions, which greatly increases the absorption capacity of the first light-shielding layer for the light emitted by the light-emitting diode. This solves the problem that the light emitted by the light-emitting diode passes through the first light-shielding layer and affects the TFT, and effectively reduces the influence of light on the electrical characteristics of the TFT. Attached Figure Description

[0029] Appendix Figure 1 This is a partial structural diagram of the display panel of the present invention;

[0030] Appendix Figure 2 This is a schematic diagram of the protrusion structure in one embodiment of the present invention;

[0031] Appendix Figure 3 This is a schematic diagram of the protrusion structure in one embodiment of the present invention;

[0032] Appendix Figure 4 This is a schematic diagram of the protrusion structure in one embodiment of the present invention;

[0033] Appendix Figure 5 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0034] Appendix Figure 6 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0035] Appendix Figure 7 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0036] Appendix Figure 8 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0037] Appendix Figure 9 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0038] Appendix Figure 10 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0039] Appendix Figure 11 This is a schematic diagram of one step in the display panel manufacturing method of the present invention;

[0040] Appendix Figure 12 This is a schematic diagram of the protrusion structure in one embodiment of the present invention. Detailed Implementation

[0041] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by a person skilled in the art without creative work, fall within the protection scope of the present application.

[0042] The terms "first", "second" and the like in the present application are used to distinguish different objects, rather than to describe a specific sequence. In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or modules is not limited to the listed steps or modules, but can optionally include steps or modules not listed, or can optionally include other steps or modules inherent to the process, method, product or device.

[0043] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive of one another. A person of ordinary skill in the art will understand that the embodiments described herein can be combined with one another.

[0044] Reference Figure 1The application provides a display panel, including a substrate 1, a pixel driving circuit layer and a plurality of light emitting elements 14, wherein the substrate 1 is used for carrying a film layer arranged thereon, the substrate 1 can include a single-layer insulating material such as glass, quartz and polymer resin, or a multi-layer insulating material such as double-layer polymer resin, and the substrate 1 can be a rigid substrate or a flexible substrate. The pixel driving circuit layer is located on the substrate 1 and includes a plurality of pixel driving circuits, each of which includes a TFT, which can include a gate layer, a gate insulating layer 5, an active layer 4 and a source-drain layer, the gate layer includes a gate 6, the source-drain layer includes a source-drain 8, a first passivation layer 9 is formed on the source-drain layer, and the first passivation layer 9 can include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide; a plurality of light emitting elements 14 are arranged on the first passivation layer 9, each of the light emitting elements 14 is electrically connected with the TFT of the corresponding pixel driving circuit, and the light emitting element 14 can be a micro light emitting diode; it can be understood that the first passivation layer 9 is provided with an opening, a pixel electrode 10 is formed in the opening, and the micro light emitting diode is connected with the source-drain 8 of the source-drain layer through the pixel electrode 10; a first light shielding layer 12 is formed on the first passivation layer 9, a plurality of openings are arranged on the first light shielding layer 12 to expose and surround a plurality of light emitting elements 14, and a plurality of protrusions 13 are formed on the side of the first light shielding layer 12 away from the first passivation layer 9; it can be understood that when the light emitted by the micro light emitting diode is directed to the protrusion 13, part of the light is reflected to another adjacent protrusion 13, and the reflected light is absorbed by the protrusion 13 multiple times, thereby greatly increasing the light absorption capacity of the first light shielding layer 12, that is, increasing the light shielding effect of the first light shielding layer 12.

[0045] The application sets the plurality of protrusions 13 on the first light shielding layer 12, so that the light emitted by the light emitting diode is reflected multiple times at the protrusions 13 and is absorbed by the protrusions 13, thereby greatly increasing the light absorption capacity of the first light shielding layer 12 to the light emitted by the light emitting diode, solving the problem that the light emitted by the light emitting diode passes through the first light shielding layer 12 and affects the TFT, and effectively reducing the influence of the light on the electrical characteristics of the TFT.

[0046] As known from the above, increasing the number of reflections of the light on the protrusions 13 can improve the light absorption capacity of the first light shielding layer 12, so as to further improve the light shielding effect of the first light shielding layer 12. By designing the light incident on the protrusions 13 to be reflected at least twice between adjacent two protrusions 13, it can be known that, due to the incident angle, only part of the light incident on the protrusions 13 can be reflected twice or more times.

[0047] Specifically, as shown in Figure 2 , the cross-sectional shape of the connecting surface of adjacent two protrusions 13 is taken as an example to illustrate that the adjacent two protrusions 13 are connected to each other, that is, the distance L1 between the adjacent two protrusions 13 is 0, and that when the angle of the two inclined edges of the protrusions 13 is θ1, part of the light incident on the first light shielding layer 12 will be reflected twice, that is, part of the light will be absorbed twice by the protrusions 13.

[0048] Specifically, as shown in Figure 3 , the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13 is related to the angle of the two inclined edges of the protrusions 13, the incident point of the light is unchanged, the angle of the two inclined edges of the protrusions 13 is changed, when the distance between the adjacent two protrusions 13 is L1 and the angle of the two inclined edges of the protrusions 13 is changed to θ2, part of the light incident on the first light shielding layer 12 will be reflected four times, that is, part of the light will be absorbed four times by the protrusions 13. It can be seen that the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13 is related to the angle of the two inclined edges of the protrusions 13, and adjusting the angle of the two inclined edges of the protrusions 13 can change the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13.

[0049] Specifically, as shown in Figure 4 , the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13 is also related to the distance between the adjacent protrusions 13, the incident point of the light is unchanged, when the angle of the two inclined edges of the protrusions 13 is θ1 and the distance between the adjacent two protrusions 13 is changed to L2, the light that can be reflected to the adjacent protrusions 13 cannot be reflected to the adjacent protrusions 13 any more. It can be seen that the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13 is related to the distance between the adjacent protrusions 13, and adjusting the distance between the adjacent protrusions 13 can change the number of reflections of the light incident on the first light shielding layer 12 between the protrusions 13.

[0050] When the angle of the two inclined edges of the protrusions 13 is unchanged and only the height is changed, the protrusions 13 are enlarged in the same proportion, and therefore, the same is not described in the embodiment.

[0051] It can be known that the cross-sectional shape of the connecting surface of the two protrusions 13 is other concave types, and the above-mentioned effects can be achieved by changing the relevant parameters, such as U-shaped and W-shaped, and the deformation of the above-mentioned shapes is within the concept and protection of the present application.

[0052] As described above, the angle of the two inclined edges of the protrusion 13 and the distance between adjacent protrusions 13 can change the number of reflections of the light between the protrusions 13, so when the person skilled in the art needs the light to achieve a corresponding number of reflections in the protrusions 13, the person skilled in the art can change the above-mentioned parameters to achieve sufficient number of reflections.

[0053] As shown in the embodiment of the present application, Figure 12 It can be known that the protrusions 13 can also be arranged in an array on the first light shielding layer 12.

[0054] In an embodiment of the present application, the passivation layer includes a first passivation layer 9 and a second passivation layer 11, the first passivation layer 9 is formed on the source-drain electrode layer, the second passivation layer 11 is formed on the first passivation layer 9, the first light shielding layer 12 and the light emitting element 14 are located on the second passivation layer 11, and the pixel electrode 10 is formed in the opening of the first passivation layer 9 and the second passivation layer 11.

[0055] In an embodiment of the present application, a second light shielding layer 2 is further formed on the substrate 1, an insulating layer 3 is formed on the second light shielding layer 2, and the TFT structure layer is formed on the insulating layer 3. Specifically, the active layer 4 is formed on the insulating layer 3, and the position of the second light shielding layer 2 corresponds to the active layer 4 and partially overlaps with the first light shielding layer 12 to shield and protect the two sides of the active layer 4.

[0056] In an embodiment of the present application, the distance between the top of the protrusion 13 on the first light shielding layer 12 and the first passivation layer 9 is less than the distance between the light emitting surface of the light emitting element 14 and the first passivation layer 9. It can be known that the first light shielding layer 12 and the protrusion 13 thereon are used to absorb the light emitted by the light emitting element 14 to prevent affecting the electrical properties of the TFT, so the light emitting surface of the light emitting element 14 should be greater than the distance between the top of the protrusion 13 and the passivation layer. The thickness of the protrusion 13 is in the range of 100-300 nm, and specifically, the thickness of the protrusion 13 is 200 nm.

[0057] In one embodiment of the present invention, the portion of the first light-shielding layer 12 closer to the light-emitting element 14 has more protrusions 13 than the portion of the first light-shielding layer 12 farther from the light-emitting element 14. It is known that, due to the propagation of light and the emission angle of the light-emitting element 14, the portion of the first light-shielding layer 12 closer to the light-emitting element 14 will receive stronger light intensity. Based on this, more protrusions 13 can be provided in the portion of the first light-shielding layer 12 closer to the light-emitting element 14 to achieve a better light-shielding effect.

[0058] This invention also provides a method for manufacturing a display panel, specifically including the following steps:

[0059] like Figure 5 As shown, a first metal layer is deposited on a glass substrate 1. Specifically, the first metal layer can be formed by physical vapor deposition. The first metal layer can be a Mo, Mo / Cu film, etc. The first metal layer is patterned to form a second light-shielding layer 2.

[0060] like Figure 6 As shown, an inorganic barrier layer, namely the above-mentioned insulating layer 3, is deposited on the substrate 1 and the second light-shielding layer 2. Specifically, the inorganic barrier layer can be formed by chemical vapor deposition. The inorganic barrier layer can be a SiOx or SiNx film.

[0061] A semiconductor oxide layer is deposited on the insulating layer 3, and the semiconductor oxide layer is patterned to form an active layer 4. Specifically, the active layer 4 is formed by physical vapor deposition, and the active layer 4 includes semiconductor oxide layers such as GZO / IGTO / IGZTO.

[0062] like Figure 7 As shown, an inorganic barrier layer, namely the gate insulating layer 5, is deposited on the active layer 4. Specifically, the gate insulating layer 5 can be formed by chemical vapor deposition. The gate insulating layer 5 may include silicon oxide, silicon nitride, silicon nitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. These materials can be used alone or in combination with each other.

[0063] A second metal layer is deposited on the gate insulating layer 5, and the second metal layer is patterned to form the gate layer described above. The patterning of the gate insulating layer 5 is completed using a top gate self-alignment process. The gate 6 can be constructed using a low-resistance material. The gate 6 may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu), but is not limited thereto.

[0064] As shown in Figure 8 , a mesenchymal protective layer 7 is deposited on the insulating layer 3, the active layer 4 and the gate layer, specifically, the mesenchymal protective layer 7 is formed by chemical vapor deposition, the material of the mesenchymal protective layer 7 can be SiOx or SiOx / SiNx laminated material, and a hole is formed by photolithography process, then a Cu or Mo metal layer is deposited by physical vapor deposition to form the source and drain 8.

[0065] As shown in Figure 9 , a passivation protective layer is deposited on the mesenchymal protective layer 7 and the source and drain 8 to form a first passivation layer 9, specifically, the first passivation layer 9 can be formed by chemical vapor deposition, the film layer material of the first passivation layer 9 can be SiOx or SiOx / SiNx laminated material. A first opening is formed on the first passivation layer 9 by photolithography process, and a metal layer such as ITO / IZO is deposited by physical vapor deposition to form a pixel electrode 10 of the TFT in the first opening.

[0066] As shown in Figure 10 and Figure 11 , a second passivation layer 11 is formed on the pixel electrode 10 and the first passivation layer 9 by chemical vapor deposition, the film layer material of the second passivation layer 11 can be SiOx or SiNx film layer; then a light shielding layer material is coated to form the above-mentioned first light shielding layer 12, the first light shielding layer 12 can be a light absorbing material such as black matrix (BM) or black organic photoresist material, then a second opening is formed on the pixel electrode 10 by dry etching process on the second passivation layer 11 and the first light shielding layer 12. The surface of the first light shielding layer 12 is specially treated by dry etching process to form the above-mentioned protrusion 13. A light emitting element is formed on the pixel electrode 10, which is electrically connected to the pixel electrode 10 and exposed to the second opening.

[0067] The present application forms a plurality of protrusions 13 on the first light shielding layer 12, so that the light emitted by the light emitting diode is reflected multiple times at the protrusions 13 and is absorbed by the protrusions 13 multiple times, greatly increasing the light absorption capacity of the first light shielding layer 12 to the light emitted by the light emitting diode, solving the problem that the light emitted by the light emitting diode passes through the first light shielding layer 12 and affects the TFT, effectively reducing the influence of light on the electrical characteristics of the TFT.

[0068] The present application also provides a display device comprising the display panel according to any one of the above or the display panel manufactured by the manufacturing method.

[0069] In summary, although the present application has been disclosed with preferred embodiments as above, the preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, and therefore the protection scope of the present application is defined by the scope of the claims.

Claims

1. A display panel, characterized by, The display panel comprises: a substrate; a pixel driving circuit layer on the substrate, comprising a plurality of pixel driving circuits, each of the pixel driving circuits comprising a TFT and a first passivation layer formed on the TFT; a plurality of light emitting elements on the first passivation layer, each of the light emitting elements being electrically connected to the TFT of the corresponding pixel driving circuit through a pixel electrode; a first light shielding layer on the first passivation layer, provided with a plurality of openings to expose and surround a plurality of the light emitting elements; wherein the side of the first light shielding layer away from the first passivation layer is formed with a plurality of protrusions, the top of the protrusions is closer to the first passivation layer than the light emitting elements, and the part of the first light shielding layer close to the light emitting elements is provided with more protrusions than the part of the first light shielding layer away from the light emitting elements; the cross-sectional shape of the connecting surface between two adjacent protrusions comprises one or more of V-shaped, U-shaped and W-shaped; the protrusions are configured to absorb the light rays penetrating the first light shielding layer from the light emitting elements through multiple reflections; the angle of the two inclined edges of the protrusions and the distance between adjacent protrusions are configured to control the number of reflections of the light rays between the protrusions.

2. The display panel of claim 1, wherein, The protrusions are long strip-shaped, and their two ends respectively extend to the two boundaries of the first light shielding layer.

3. The display panel of claim 1, wherein, The substrate is further formed with a second light shielding layer, the TFT structure layer is formed on the second light shielding layer, and the second light shielding layer partially overlaps with the first light shielding layer.

4. The display panel of claim 1, wherein, The thickness of the protrusions ranges from 100 to 300 nm.

5. The display panel of claim 1, wherein, The light emitting elements are micro light emitting diodes.

6. A manufacturing method of a display panel, comprising: The display panel comprises: forming a second light shielding layer on a substrate; forming an insulating layer on the second light shielding layer; forming a TFT on the insulating layer; forming a first passivation layer on the TFT and patterning the first passivation layer to form a first opening; forming a pixel electrode on the first passivation layer to expose the first opening; forming a second passivation layer on the first passivation layer; forming a first light shielding layer on the second passivation layer, and patterning the first light shielding layer and the second passivation layer to form a second opening; etching the side of the first light shielding layer away from the first passivation layer to form a plurality of protrusions; forming a light emitting element on the pixel electrode, which is electrically connected to the pixel electrode and exposed to the second opening; wherein the cross-sectional shape of the connecting surface between two adjacent protrusions comprises one or more of V-shaped, U-shaped and W-shaped; the protrusions are configured to absorb the light rays penetrating the first light shielding layer from the light emitting elements through multiple reflections; the angle of the two inclined edges of the protrusions and the distance between adjacent protrusions are configured to control the number of reflections of the light rays between the protrusions; the part of the first light shielding layer close to the light emitting elements is provided with more protrusions than the part of the first light shielding layer away from the light emitting elements.

7. A display device, characterized by comprising: The display panel comprises the display panel of any one of claims 1-5 or the display panel manufactured by the manufacturing method of claim 6.

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