Device for capturing reaction byproducts generated in organic film deposition process

Abstract

The present invention relates to a device for capturing reaction by-products generated in an organic film deposition process. The device for capturing reaction by-products generated in an organic film deposition process applicable to the present invention is characterized in that it includes: an outer shell for accommodating and discharging unreacted gas that flows in; a heater, located on the inner side of the outer shell, which diffuses the inflowing gas while uniformly heating the gas by using a diffuser arranged radially in a double structure; and an internal capture tower, which is vertically arranged with a first disk-type capture section to a fifth disk-type capture section composed of capture plates arranged radially and having a wider surface area per unit area, and capture disks with exhaust holes formed in the center or in a radial arrangement for concentrated or dispersed discharge of the gas flow.

Description

Technical Field

[0001] The present invention relates to a device for capturing reaction byproducts generated in an organic film deposition process, and more particularly to a device for capturing particulate reaction byproducts contained in unreacted gases exhausted after an organic film deposition process is performed in a process chamber in a semiconductor manufacturing process in the form of a thin film. The device is equipped with an internal capture tower having a wider surface area and a flow rate reduction structure, thereby enabling efficient capture by increasing the residence time under uniform flow rate and capture temperature conditions. Background Art

[0002] Generally speaking, semiconductor manufacturing engineering generally includes pre-engineering (fabrication engineering) and post-engineering (assembly engineering). The pre-engineering refers to the engineering process of repeatedly depositing a thin film on a wafer and selectively etching the deposited thin film inside various process chambers to process a specific pattern and thereby manufacture a semiconductor chip. The post-engineering refers to the engineering process of individually separating the chips manufactured in the above-mentioned pre-engineering and then combining them with the lead frame to assemble the finished product.

[0003] At this time, the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer is performed by injecting required engineering gases such as silane, arsenic, boron chloride, hydrogen, etc. or injecting required engineering gases such as precursor gases for performing thin film deposition into the process chamber through a gas injection system and performing it under high temperature conditions. At this time, a large amount of harmful gases containing various flammable gases, corrosive foreign matter, and toxic components will be generated inside the process chamber.

[0004] To this end, in a semiconductor manufacturing device, in order to allow the unreacted gas exhausted from the process chamber to be discharged after purification, a scrubber for purifying the exhaust gas exhausted from the process chamber and then discharging it into the atmosphere is provided at the rear end of a vacuum pump for converting the process chamber into a vacuum state.

[0005] However, the scrubber as described above only purifies reaction by-products in gaseous form. Therefore, if the reaction by-products in particle form contained in the unreacted gas discharged from the process chamber are not captured in advance, the unreacted gas discharged from the process chamber may be fixed in the pipeline and cause the exhaust pressure to rise, or flow into the vacuum pump and cause the pump to malfunction, or flow back into the process chamber and cause contamination of the wafer, etc.

[0006] Therefore, a reaction byproduct capture device having various structures for condensing unreacted gas exhausted from the process chamber into a powder state is installed between the process chamber and the vacuum pump of the semiconductor manufacturing device.

[0007] However, the structure of the internal capture tower used in the existing by-product capture device is constructed by machining multiple holes of the same or different sizes on the surface of the capture plate and additionally configuring warm flow sheets around it. This is a method of forming a flow rate difference between fast flow and slow flow through different load sizes in the gas flow and forming warm flows of different sizes at multiple positions, thereby causing gas stagnation and increasing the contact area between the capture surface and the unreacted gas. Therefore, it has a structural defect in providing a uniform and stable gas flow while reducing the flow rate of the unreacted gas.

[0008] Due to the reasons mentioned above, under the existing capture device structure, when the unreacted gas containing fine reaction by-products is discharged and flows into the capture device after the organic film deposition process is performed in the process chamber, the capture conditions cannot be fully met and the reaction by-products cannot be captured in the form of a thin film because there is no stable flow rate reduction structure and a capture plate with high capture efficiency per unit area.

[0009] Therefore, there is an urgent need to develop a reaction byproduct capture device that can solve the above-mentioned existing problems.

[0010] Prior art literature

[0011] Patent Literature

[0012] (Patent Document 1) Korean Patent Registration No. 10-0717837 (2007.05.07)

[0013] (Patent Document 2) Korean Patent Gazette Registration No. 10-0862684 (2008.10.02)

[0014] (Patent Document 3) Korean Patent Gazette Registration No. 10-1447629 (September 29, 2014)

[0015] (Patent Document 4) Korean Patent Registration No. 10-1806480 (December 1, 2017) Summary of the invention

[0016] In order to solve the problems mentioned above, the purpose of the present invention is to provide a capture device for capturing reaction by-products contained in unreacted gases that flow into a capture device after an organic film deposition process is performed in a process chamber in a semiconductor manufacturing process. The capture device increases the residence time of the gas and captures the reaction by-products in a thin film form while maintaining a uniform temperature distribution by being equipped with an internal capture tower that has a disc-shaped capture portion composed of a plurality of structural capture plates with a wider surface area per unit area and a capture disc that discharges the gas flow in a concentrated or dispersed manner.

[0017] Another object of the present invention is to provide a capture device that extends and diffuses the flow path through a double-structured diffuser in order to increase the capture efficiency of the inflowing gas and achieves a uniform temperature through a heater coupled to the lower end of the diffuser.

[0018] In order to achieve the above-mentioned purpose and solve the problems existing in the prior art, the present invention provides a capture device for reaction byproducts generated in an organic film deposition process, characterized in that: as a supply of unreacted gas discharged after a reaction in a process chamber for performing an organic film deposition process in a semiconductor manufacturing process, the capture device captures the reaction byproducts in a particle state with a lowered temperature in a capture available space after heating with a heater and discharges the remaining gas, comprising:

[0019] A housing for receiving and discharging the unreacted gas that flows in;

[0020] a heater, located inside the housing, which diffuses the inflowing gas by using diffusers radially arranged in a double structure and uniformly heats the gas; and,

[0021] The internal capture tower is vertically arranged with the first disc-type capture section, the second disc-type capture section, the third disc-type capture section, the fourth disc-type capture section and the fifth disc-type capture section, which are composed of radially arranged structural capture plates with a wider surface area per unit area and capture discs with exhaust holes formed in the center or in a radial arrangement for concentrated or dispersed discharge of the gas flow.

[0022] As a preferred embodiment, it is characterized in that: the above-mentioned first disk-type capturing portion guides the gas flow to the central part through a plurality of structural capturing plates arranged radially, and discharges the gas flow to the lower part through a central exhaust hole formed on the capturing disk and a plurality of nail-hole-shaped exhaust holes arranged radially, thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capturing plates and the capturing disk.

[0023] As a preferred embodiment, it is characterized in that: the multiple structural capture plates arranged radially in the above-mentioned first disc-type capture part are formed by alternatingly installing larger and longer structural capture plates and relatively smaller and shorter structural capture plates compared with the larger and longer structural capture plates.

[0024] As a preferred embodiment, it is characterized in that: the above-mentioned second disk-type capturing portion guides the supplied gas flow to the outside direction through a plurality of radially arranged structural capturing plates, and then utilizes the inclined guide formed along the periphery of the capturing disk to block the gas flow supplied from the upper or side direction and gather it again to the inside to make it stagnate, and discharges it evenly to the lower part through the exhaust holes in the form of long holes arranged radially along the radially arranged structural capturing plates, so that the reaction by-products are evenly captured in the form of a thin film by the structural capturing plates and the capturing disks.

[0025] As a preferred embodiment, it is characterized in that the above-mentioned inclined guide is located at a position close to the inner diameter of the outer shell body or in surface contact with the inner diameter of the outer shell body, thereby avoiding the gas uniformly supplied to the uppermost first disk-type capture part from being directly supplied to the multiple disk-type capture parts existing at the lower end of the second disk-type capture part.

[0026] As a preferred embodiment, it is characterized in that: the above-mentioned third disk-type capturing portion discharges the supplied gas flow to the lower part through the outer direction of the capturing disk through a plurality of radially arranged double-structured capturing plates, and at the same time, discharges the gas flow evenly to the lower part through a plurality of exhaust holes formed in the central part of the lower capturing disk and the exhaust holes in the form of long holes arranged radially, thereby uniformly capturing the reaction by-products in the form of a thin film through the double-structured capturing plates and the capturing disks.

[0027] As a preferred embodiment, it is characterized in that: the above-mentioned fourth disk-type capturing portion discharges the supplied gas flow through the outer direction of the capturing disk to the lower part through a plurality of double-structured capturing plates arranged radially, and discharges the gas flow evenly to the lower part through the long hole-shaped exhaust holes arranged radially on the lower capturing disk, thereby uniformly capturing the reaction by-products in the form of a thin film through the double-structured capturing plates and the capturing disks.

[0028] As a preferred embodiment, exhaust disks are formed at a certain interval upwardly in the central portion of the capture disk of the fourth disk-type capture portion, so that the descending gas collides and thereby improves the side exhaust efficiency through the double-structure capture plate.

[0029] As a preferred embodiment, the cross-section of the double-structure capture plate of the third disc-type capture portion and the fourth disc-type capture portion is formed into a double cross shape by means of a vertical plate and a first horizontal plate and a second horizontal plate dividing the vertical plate into two sides, and exhaust holes are formed on the first horizontal plate along the length direction.

[0030] As a preferred embodiment, the second horizontal plate has a relatively larger cross-sectional area than the first horizontal plate located above it, and is formed in a shape whose width increases toward the outer side compared to the center of the capture disk.

[0031] As a preferred embodiment, it is characterized in that: the above-mentioned fifth disk-type capture portion guides the supplied gas flow to the outside direction through a plurality of radially arranged structural capture plates, and then discharges the gas evenly to the lower part through exhaust holes in the form of radially arranged long holes on the lower capture disk along the periphery of the capture disk with a relatively smaller diameter than the capture disk of the fourth disk-type capture portion and a relatively large number of radially arranged structural capture plates, thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capture plates and the capture disks.

[0032] As a preferred embodiment, it is characterized in that the cross section of the structural capture plate is formed into a cross shape by means of a vertical plate and a horizontal plate dividing it into two sides.

[0033] As a preferred embodiment, the above-mentioned heater includes: a heater body; diffusers, which are arranged in multiple layers in a double structure, and are combined with the upper side of the heater body to supply the conducted heat source to the unreacted gas flowing in and cause it to diffuse; wherein the above-mentioned diffuser includes: a diffuser heat transfer plate, which is used to transfer the heat source to a wider area than the heater body; a plurality of vertical internal diffuser plates, which are arranged in a radial circular shape in the central part of the diffuser heat transfer plate to uniformly supply the heat source while diffusing the unreacted gas flowing in; and a plurality of vertical external diffuser plates, which are arranged in a radial circular shape in the diffuser heat transfer plate along the periphery of the above-mentioned internal diffuser plates to further subdivide the heat source while subdividing and diffusing the unreacted gas flowing in.

[0034] The reaction byproduct capture device applicable to the present invention with the above-mentioned characteristics can form a wider surface area per unit area and a uniform vortex forming structure for increasing the capture time by radially arranging structural capture plates with a cross-shaped cross-section or a double cross-shaped cross-section. In addition, by being equipped with an internal capture tower that is composed of multiple capture plates arranged in the vertical direction and radially arranged exhaust holes for concentrated or uniformly dispersed gas flow and a disc-shaped capture portion for capturing reaction byproducts, the flow rate of the inflowing gas can be reduced when capturing the byproducts contained in the unreacted gas discharged after the organic film deposition (Organic Film Deposition) process is performed in the process chamber during the manufacturing process, and the gas can be supplied downward in sequence on different layers, thereby increasing the residence time while uniformly maintaining the internal temperature distribution and thereby uniformly capturing the byproducts in the unreacted gas in the form of a thin film on the surface of the structural capture plate.

[0035] In addition, the present invention forms an inclined guide around the capture disk of the upper disk-type capture part in the disk-type capture part constituting the internal capture tower, which is located at a position close to the inner diameter of the outer shell body and gradually inclined downward. This can prevent the gas supplied to the uppermost disk-type capture part from being directly supplied to the multiple disk-type capture parts located on the lower side and causing the gas to be concentrated on the inner side of the inclined guide and then evenly supplied to the disk-type capture parts located below it in sequence, thereby uniformly capturing the gas while passing through a longer flow path using the structural capture plate and the capture disk with a wider surface area.

[0036] In addition, the present invention is equipped with a heat source improved by diffusers arranged radially in a double structure and a heater with an inflow gas diffusion structure. It can extend the reach of the heat source heated in the upper end area inside the capture device to a farther position and diffuse the gas, thereby expanding the uniform temperature area and supplying the heated unreacted gas to the internal capture tower at a uniform temperature and flow rate, so that the flow rate is delayed again and the reaction by-products contained in the gas are efficiently captured.

[0037] As described above, the present invention is a useful invention having various advantages and has good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a perspective view of a reaction byproduct capture device according to one embodiment of the present invention.

[0039] Figure 2 This is a cross-sectional view illustrating the structure of a reaction by-product capturing device according to an embodiment of the present invention.

[0040] Figure 3It is a perspective view of the upper part and the bottom surface of a heater applicable to one embodiment of the present invention.

[0041] Figure 4 This is an exploded perspective view illustrating the structure of a heater according to an embodiment of the present invention.

[0042] Figure 5 It is a perspective view of an internal capture tower according to one embodiment of the present invention.

[0043] Figure 6 It is an exploded perspective view of an internal capture tower according to one embodiment of the present invention.

[0044] Figures 7 to 11 This is a schematic diagram showing the structure of a disk-shaped capture portion constituting an internal capture tower according to an embodiment of the present invention.

[0045] Fig.12 The diagram is a schematic diagram illustrating the gas flow inside a reaction byproduct capture device according to one embodiment of the present invention.

[0046] Fig.13 It is a flow rate pattern diagram inside a reaction byproduct capture device according to one embodiment of the present invention.

[0047] Fig.14 FIG. 1 is a flow velocity vector diagram inside a reaction byproduct capture device according to an embodiment of the present invention.

[0048] Fig.15 This is a temperature pattern diagram inside a reaction byproduct capture device according to one embodiment of the present invention.

[0049] Fig.16 This is a schematic diagram illustrating the capture tendency inside a reaction byproduct capture device according to one embodiment of the present invention.

[0050] (Explanation of Reference Numerals)

[0051] 1: Shell 2: Heater

[0052] 3: Internal capture tower 11: Shell body

[0053] 12: Cooling water flow path 12a: Flow path cover

[0054] 13: Cooling water inlet 14: Cooling water outlet

[0055] 15: Gas inlet 16: Upper plate

[0056] 17: Gas outlet 18: Lower plate

[0057] 19: Temperature sensor 21: Heater body

[0058] 21a: Joint 21b: Heat pipe

[0059] 22: Diffuser 23: Heater power supply

[0060] 31: 1st disc-shaped capturing part 32: 2nd disc-shaped capturing part

[0061] 33: 3rd disc-shaped capturing part 34: 4th disc-shaped capturing part

[0062] 35: 5th disc-shaped capture part 41, 42, 43: support rod

[0063] 221: Diffuser heat conducting plate 221a: Combination hole

[0064] 222: Internal diffuser plate 223: External diffuser plate

[0065] 311, 321, 351: Structural capture plates

[0066] 311a, 321a, 331a, 341a, 351a: vertical plate

[0067] 311b, 321b, 351b: Horizontal plate

[0068] 312, 322, 332, 342, 352: Capture disk

[0069] 312a, 332a: Central exhaust hole

[0070] 312b: Nail hole exhaust hole

[0071] 312c, 322b: Hole

[0072] 322a, 332b, 342a, 352a: Long hole shaped exhaust holes

[0073] 323: Inclined guide

[0074] 331, 341: Double structure capture plate

[0075] 331b, 341b: 1st horizontal plate

[0076] 331c, 341c: 2nd horizontal plate

[0077] 331d, 341d: Exhaust hole

[0078] 333, 344, 353: Joint

[0079] 343: Exhaust disc DETAILED DESCRIPTION

[0080] Next, the structure and function of the embodiments applicable to the present invention will be described in detail with reference to the accompanying drawings. In addition, in the process of describing the present invention, when it is determined that the specific description of the relevant known functions or structures may make the gist of the present invention unclear, the detailed description related thereto will be omitted.

[0081] Figure 1 This is a schematic diagram illustrating the structure of a disc-shaped capture portion constituting an internal capture tower according to an embodiment of the present invention. Figure 2 is a cross-sectional view illustrating the structure of a reaction byproduct capture device according to one embodiment of the present invention. Figure 3 1 is an oblique view of the upper and lower surfaces of a heater according to an embodiment of the present invention. Figure 4 This is an exploded perspective view illustrating the structure of a heater according to one embodiment of the present invention. Figure 5 is a perspective view of an internal capture tower according to one embodiment of the present invention. Figure 6 is an exploded perspective view of an internal capture tower according to one embodiment of the present invention. Figures 7 to 11 This is a schematic diagram showing the structure of a disk-shaped capture portion constituting an internal capture tower according to an embodiment of the present invention.

[0082] As shown in the figure, a device for capturing reaction byproducts generated in an organic film deposition process applicable to the present invention comprises: a shell 1 for accommodating and discharging unreacted gases; a heater 2, located on the upper inner side of the shell, and having a structure for diffusing the inflowing gas while uniformly conducting the heat source of the heater main body 21 using a diffuser 22 radially arranged in a double structure; an internal capture tower 3, having a plurality of disc-shaped capture sections arranged vertically in multiple layers, the disc-shaped capture sections comprising a structural capture plate and a capture plate, the structural capture plate being mounted on the inner side of the shell, arranged radially and having a wider surface area per unit area, thereby causing the flow path of the gas heated and diffused by the heater to stagnate and convert and uniformly capturing the particulate reaction byproducts in the form of a thin film, and the capture plate forming exhaust holes in the central portion or arranged radially, thereby concentrating or uniformly dispersing the gas flow for discharge.

[0083] The reaction byproduct capture device as described above is a device used to condense and capture the particle-shaped reaction byproducts contained in the unreacted gas discharged from the process chamber (not shown) in semiconductor engineering, and then discharge only the remaining gas into a vacuum pump. In particular, in order to uniformly and efficiently capture the fine particle-shaped reaction byproducts contained in the unreacted gas discharged after the organic film deposition (Organic Film Deposition) process is performed in the process chamber in the semiconductor manufacturing process in the form of a thin film, the capture is performed in an internal capture tower equipped with multiple layers in the vertical direction and a disc-shaped capture portion composed of a structure that can reduce the flow rate of the gas and disperse it with a uniform flow rate and temperature distribution.

[0084] The type of gas processed by the reaction byproduct capture device applicable to the present invention is the unreacted gas exhausted after the organic film deposition process is performed in the process chamber using process gases such as 1,4-cyclohexanedimethylamine (1,3-Cyclo hexanebis(Methylamine)), isomer mixtures, and 1,3-bis(Isocyanatomethyl)cyclohexane (1,3-Bis(Isocyanatomethyl)Cyclo hexane). The reaction byproducts in the particle state contained in the gas as described above only contain a small amount of fine particles, and because of the difference in the process gas used and the difference in the amount used, it is difficult to effectively capture them in the capture device structure currently used. Therefore, in the capture device having the structure applicable to the present invention, the capture is performed by increasing a larger surface area per unit area while providing a uniform flow rate and a temperature distribution that can be captured while minimizing the flow rate and extending the residence time.

[0085] In order to prevent corrosion caused by unreacted gas exhausted from the process chamber in the capture device applicable to the present invention as described above, most of its components are made of materials such as stainless steel or aluminum that can prevent corrosion.

[0086] The housing 1 comprises: a housing body 11 for receiving the unreacted gas flowing in; an upper plate 16 formed with an O-ring protection which is combined with the upper part of the housing body to maintain airtightness and watertightness, a cooling water inlet 13 and a cooling water outlet 14 for supplying cooling water to or discharging cooling water from a cooling water flow path 12 in order to maintain an appropriate temperature when capturing reaction by-products in the lower area of ​​the upper plate, and a gas inlet 15 for gas to flow in; and a lower plate 18 formed with a gas outlet 17 which is combined with the lower part of the housing body to discharge the remaining gas after capturing the reaction by-products in a particle state.

[0087] The inner wall of the housing body 11 , the bottom surface of the upper plate 16 , and the upper side surface of the lower plate 18 capture the reaction by-products in a particle state contained in the gas, similarly to the internal capture tower 3 .

[0088] In particular, in the housing body 11, the capture is concentrated only on one side of the upper inner wall because the flow of unreacted gas from one position to the lower part is blocked by the disc-shaped capture portion described later, thereby capturing only on one side of the upper part.

[0089] The housing body 11, the upper plate 16 and the lower plate 18 are shown in a cylindrical or disc shape according to an embodiment of the present invention, but the present invention is not limited to the above-mentioned shape, and can also be formed in a required shape such as a square cylinder or a square disc. However, when the present invention is described below, the drawings in the cylindrical or disc shape will be mainly used for the convenience of description.

[0090] The housing body 11 is in the shape of a hollow box, and can store the inflowing gas so that the inflowing gas is condensed and captured by the internal capture tower 3 installed inside. After the internal capture tower 3 is stored and installed, the upper plate 16 is covered on the upper part of the housing body 11 and fixed by known fastening means including bolts.

[0091] The upper plate 16 may function as a lid for covering the upper portion of the housing body 11 which is open at the upper portion, and may receive supply of unreacted gas exhausted from the process chamber through the gas inlet 15 .

[0092] In addition, a cooling water flow path 12 is formed in the form of a groove on the upper surface of the upper plate 16 to prevent the occurrence of problems such as deformation of an O-ring (not shown) when the internal space of the housing body 11 is heated by the operation of the heater 2 installed on the bottom surface, and to provide an appropriate temperature range when capturing reaction byproducts. The upper part of the cooling water flow path formed with the groove is covered with a flow path cover 12a. Although not shown, the flow path cover can be combined in a manner including a sealing process to achieve water tightness, and as its combination method, it can be combined using known techniques such as embedded, welded, and bolted.

[0093] The cooling water flow path 12 is configured such that cooling water supplied from an external cooling water tank (not shown) flows in through a cooling water inlet 13 and then flows out through a cooling water outlet 14 for circulation. In order to prevent the inflowing cooling water and the discharged cooling water from mixing with each other, the cooling water flow paths between adjacent cooling water inlets 13 and cooling water outlets 14 are not connected but are formed in a manner with a boundary portion. Water or a refrigerant can be used as the cooling water.

[0094] The space portion of the area forming the cooling water flow path 12 is a space portion corresponding to the edge side of the upper area of ​​the internal capture tower 3, and the temperature of the high-temperature gas supplied to the above area after being heated in the heater and diffused in the diffuser can be adjusted to a temperature range that can capture reaction by-products.

[0095] In addition, the gas inlet 15 is fixed by welding or the like after a hole is machined on the upper plate. The gas inlet 15 can be installed at different positions, preferably at the center.

[0096] Furthermore, a heater power supply unit 23 for supplying power to the heater 2 installed on the lower side thereof is installed in the upper plate 16. For this purpose, a temperature sensor 19 for monitoring the temperature of the cooling water flow path of the capture device is included in the upper plate.

[0097] The lower plate 18 can function as a lid covering the open lower portion of the shell body 11, and can be fixed to the gas outlet 17 by methods such as welding after a hole is machined in one position, preferably in the central portion, so as to be used as a channel for discharging unreacted gas after removing reaction by-products.

[0098] The heater 2 is installed at the upper inner side of the housing 1 and comprises: a heater body 21, which generates heat when power is supplied from a heater power supply unit 23; and a diffuser 22, which is arranged in multiple layers in a double structure and is connected to the upper side of the heater body to supply the heat source uniformly conducted to the gas and diffuse it. The heater as described above can adjust the temperature of the inflowing gas to a range that can be captured and diffuse it through the diffuser.

[0099] The diffuser 22 comprises: a diffuser heat conducting plate 221, the diameter of which is larger than the upper side of the heater body, and is used to transfer the heat source to a wider area than the heater body;

[0100] A plurality of vertical internal diffuser plates 222 are arranged in a radial circular shape at the center of the diffuser heat conductive plate 221 to uniformly supply heat source and diffuse the inflowing unreacted gas uniformly in the horizontal direction; and

[0101] A plurality of vertical external diffuser plates 223 are arranged in a radial circular pattern around the internal diffuser plates 222 arranged in a radial circular pattern in the diffuser heat conductive plate 221, thereby further subdividing and evenly supplying the heat source and subdividing and diffusing the evenly diffused gas in the horizontal direction.

[0102] The number of the external diffuser plates 223 is constituted by the number of radially arranged at an angle approximately equal to half the angle of the radially arranged internal diffuser plates 222. That is, while the external diffuser plates are arranged at the outer contour position at the same angle as the radially arranged angle of the internal diffuser plates 222, the external diffuser plates are also arranged at angles between the radially arranged angles of the internal diffuser plates 222, forming a structure that allows the heat source diffused at a certain angle inside to diffuse in a more subdivided angle in the horizontal direction during the process of diffusing to the outer contour, so that the unreacted gas is uniformly heated and diffused in the horizontal direction after being subdivided.

[0103] A protrusion for being embedded and coupled to a groove formed in the diffuser heat conducting plate 221 may be formed at the lower part of the inner diffuser plate 222 and the outer diffuser plate 223. In addition, vertical installation may also be performed by welding or the like.

[0104] The heater 2 can be installed by bolts or welding in a manner adjacent to the lower side of the gas inlet 15 formed on the upper plate 16. To this end, a plurality of coupling parts 21a are arranged around the upper side of the heater body 21, and after penetrating a plurality of coupling holes 221a formed in the diffuser heat conduction plate 221 in contact with the upper surface, the coupling parts are inserted into the coupling parts protruding from the bottom side of the upper plate to the lower part and screwed, thereby coupling the heater 2 to the lower part of the upper plate.

[0105] The heat source of the heater 2 can generate heat at a set temperature when power is applied to the heater power supply unit 23 connected by the heat pipe (or heat wire) 21b and mounted on the upper side of the upper plate 16. As the raw material of the heater 2, raw materials such as ceramics or Inconel can be used to prevent corrosion caused by the inflowing gas. At this time, in order to install the electric heating pipe, a plurality of holes are punched in the diffuser heat conducting plate 221.

[0106] The heater 2 constructed as described above can prevent condensation and blockage of the unreacted gas discharged from the process chamber when it flows in through the gas inlet 15 formed on the upper plate 16 and cause the gas to condense to the maximum extent when it reaches the internal capture tower 3. At the same time, by being composed of an internal diffuser plate 222 and an external diffuser plate 223 with a double structure arranged in a double radial pattern, the heat source heated in the heater body can be conducted and then diffused evenly and accurately inside the outer shell to a position farther than the heater body, thereby subdividing and diffusing the gas that has undergone heat conduction in the horizontal direction and forming a uniform temperature range on the outer side of the upper space inside the outer shell, thereby ensuring uniform condensation by supplying a uniform heat source and gas to the upper space of the internal capture tower 3.

[0107] Furthermore, by forming a uniform temperature range on the upper peripheral side of the inner side of the housing in the manner described above, the reaction byproducts contained in the unreacted gas can be captured on the upper side of the inner wall of the housing body 11. This is because the flow of the unreacted gas from one position to the lower part is blocked by the disc-shaped capturing portion described later, so that the unreacted gas is captured only on the upper side.

[0108] In the internal capture tower 3, multiple disc-shaped capture sections are arranged in multiple layers along the vertical direction, which can cause the flow path of the gas supplied by the diffuser 22 of the heater 2 located at the top and diffused at a capture temperature to stagnate or change, thereby uniformly capturing the particulate reaction by-products in the form of a thin film.

[0109] As the basic structure of each of the above-mentioned multiple disc-shaped capturing parts, by radially arranging structural capturing plates with a cross-shaped cross-section or a double cross-shaped cross-section, a wider surface area per unit area for capturing reaction by-products and a uniform vortex forming structure for increasing the capturing time can be formed, and the capturing disk includes exhaust holes formed in the central part or arranged radially, so as to concentrate or evenly disperse the gas flow for discharge.

[0110] In addition, an inclined guide is formed around the capture disk of the upper disk-type capture part in the disk-type capture part, which is located at a position close to the inner diameter of the shell body 11 and gradually inclined downward. This can prevent the gas uniformly supplied to the uppermost disk-type capture part from being directly supplied to the multiple disk-type capture parts located on the lower side and causing it to be concentrated and gathered on the inner side of the inclined guide before being supplied to the disk-type capture part located below it.

[0111] The structural capture plate is fixed to the capture disk by embedding or welding.

[0112] As specific structures of the respective disc-shaped capturing parts sharing the above-mentioned basic structure, they are configured in different forms in the respective layers. Next, each structure will be described in detail.

[0113] The disc-shaped capturing portion applicable to one embodiment of the present invention is provided with a first disc-shaped capturing portion 31, a second disc-shaped capturing portion 32, a third disc-shaped capturing portion 33, a fourth disc-shaped capturing portion 34 and a fifth disc-shaped capturing portion 35 installed in sequence from top to bottom to form space portions at a certain interval.

[0114] The above-mentioned multiple disc-shaped capture parts can be integrated into one structure, but in one embodiment of the present invention, the first disc-shaped capture part 31 and the second disc-shaped capture part 32 are fixed by a structure that is connected to the upper plate of the housing through a support rod 41 and suspended at a certain distance, and the remaining third disc-shaped capture part 33, the fourth disc-shaped capture part 34 and the fifth disc-shaped capture part are connected to the lower plate of the housing through support rods 42 and 43 and fixed at a certain height. By means of the above-mentioned fixing structure, the influence of the flow occurring when the gas flows in and out on the disc-shaped capture part can be reduced and the stability of the fixing can be ensured.

[0115] The first disk-type capturing portion 31 can guide the gas flow supplied to the lower portion after multiple diffusion toward the inner wall of the outer shell through the diffuser 22 of the heater 2 to the central portion through a plurality of radially arranged structural capturing plates 311, and discharge the gas uniformly to the lower portion through a central exhaust hole 312a formed in the capturing disk 312 and a plurality of radially arranged nail-hole-shaped exhaust holes 312b, thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capturing plates 311 and the capturing disk 312.

[0116] The plurality of radially arranged structural capture plates 311 are formed by alternately installing larger and longer structural capture plates 311 and smaller and shorter structural capture plates 311 compared thereto.

[0117] Therefore, the number of structural capture plates 311 formed in the first disk-type capture portion 31 will be greater than the number of structural capture plates formed in the second disk-type capture portion 32 to the fifth disk-type capture portion 35 located therebelow, thereby enabling more subdivided and uniform gas to be distributed to the lower portion.

[0118] By adopting the above-mentioned structure, the vortex formation efficiency of the descending gas can be increased, and the capture efficiency thereof can be improved by causing the gas flow to stagnate.

[0119] In addition, the cross section of the structural capture plate 311 is formed into a cross shape by means of the vertical plate 311a and the horizontal plate 311b that divides it into two sides, thereby increasing the capture area per unit area.

[0120] The structural capture plate 311 with the structure as described above can cause the gas descending from the top to collide to form a vortex and reduce its flow rate before supplying it to the side direction. At the same time, it can also guide the gas flow in the length direction to achieve a capture effect.

[0121] The central exhaust hole 312a is formed in the central portion of the capture plate 312 where interference does not occur because there is no extension of the structural capture plate 311, thereby playing a main exhaust role for the gas.

[0122] In addition, the above-mentioned multiple nail hole-shaped exhaust holes 312b arranged radially are formed at least one in the lower capture plate 312 at each position where the structural capture plate 311 is installed, thereby playing an auxiliary exhaust role for the gas.

[0123] At this time, a larger nail hole-shaped exhaust hole 312b will be formed in the larger and longer structural capture plate 311, and a smaller nail hole-shaped exhaust hole 312b will be formed in the smaller and shorter structural capture plate.

[0124] In addition, a plurality of holes 312c for mounting the support rod 41 mounted from the upper plate are formed through holes in the capture disc 312 of the first disc-shaped capture part 31. By inserting a full-thread bolt fixed on the upper plate into the support rod and then penetrating and coupling to the support rod 41 located on the disc-shaped capture part 32, it can be suspended on the upper plate.

[0125] The second disc-shaped capture part 32 can guide the gas flow supplied from the first disc-shaped capture part 31 in the downward direction to the outer direction through a plurality of radially arranged structural capture plates 321, and then use the inclined guide 323 formed around the capture plate 322 to block the gas flow supplied from the upper or side direction and gather it to the inner side to stagnate, and evenly discharge it to the lower part through the long hole-shaped exhaust holes 322a arranged radially on the lower capture plate 322 along the radially arranged structural capture plates 321, so that the reaction by-products are uniformly captured in the form of a thin film through the structural capture plates 321 and the capture plate 322. At this time, the long hole-shaped exhaust holes 322a can be formed along the structural capture plate 321 with a length that almost reaches the vicinity of the center from the peripheral part, so as to evenly supply it in the downward direction.

[0126] The inclined guide 323 formed in the shape of a wall around the above-mentioned capture disk is located at a position close to the inner diameter of the housing body 11 or in a position of surface contact and is gradually inclined downward, which can prevent the gas uniformly supplied to the first disk-shaped capture part 31 at the uppermost part from being directly supplied to the multiple disk-shaped capture parts at the lower side and being concentrated to the inner side of the inclined guide before being supplied to the disk-shaped capture part at the lower part. By adopting the above-mentioned structure, the flow rate of all gases can be comprehensively reduced on the upper side and gathered and then stably supplied to the lower part, thereby increasing its capture efficiency.

[0127] The number of the structural capture plates 321 formed in the second disc-shaped capture part 32 is less than the number of the structural capture plates formed in the first disc-shaped capture part 31, thereby forming a larger space area between the two, so that the descending gases are fully mixed with each other and their temperatures are uniformed. Therefore, the gas flow can be stagnant and the capture efficiency can be improved.

[0128] In addition, the cross section of the structural capture plate 321 is formed into a cross shape by means of the vertical plate 321a and the horizontal plate 321b that divides it into two sides, thereby increasing the capture area per unit area.

[0129] The structural capture plate 321 with the structure as described above can cause the gas descending from the top to collide to form a vortex and reduce its flow rate before supplying it to the side direction. At the same time, it can also guide the gas flow in the length direction to achieve a capture effect.

[0130] Because no exhaust holes are formed in the central portion of the above-mentioned capture plate 322, the gas flow at each position where the structural capture plate 321 is installed will only be discharged through the long hole-shaped exhaust holes 322a arranged radially in the same manner as the structural capture plate 321 of the lower capture plate 312.

[0131] In addition, a plurality of holes 322b for mounting the support rod 41 mounted from the upper plate are formed through holes in the capture plate 322 of the second disc-shaped capture part 32. After inserting the full-thread bolt fixed on the upper plate into the inside of the support rod, the support rod 41 on the first disc-shaped capture part 31 located on the upper part is penetrated and connected, so that it can be suspended on the upper plate.

[0132] The third disk-type capturing portion 33 discharges the gas flow supplied downward from the second disk-type capturing portion 32 to the lower portion through the outer direction of the capturing disk 332 via the multiple double-structured capturing plates 331 arranged radially, and discharges the gas flow to the lower portion uniformly through the multiple exhaust holes 332a formed in the central portion of the lower capturing disk 332 and the long hole-shaped exhaust holes 332b arranged radially, thereby uniformly capturing the reaction by-products in the form of a thin film by the double-structured capturing plates 331 and the capturing disk 332.

[0133] At this time, the long hole-shaped exhaust holes 332b can be formed in a large area along the long-length double-structured capture plate 331 to the vicinity of the center, so as to uniformly supply the exhaust gas in the downward direction.

[0134] In addition, the exhaust holes 332 b in the form of long holes can be formed in two on each of the double-structured capturing plates 331 to increase the exhaust efficiency thereof.

[0135] In addition, the number of the double structured capture plates 331 formed on the third disc-shaped capture part 33 is the same as the number of the structured capture plates formed on the second disc-shaped capture part 32, and they are radially arranged at the same angle at the lower part, so that the descending gas collides and forms a vortex area. In this way, the gas stagnation time can be increased while further mixing and the temperature can be uniformed, thereby improving its capture efficiency.

[0136] In addition, the cross section of the double-structured capture plate 331 is formed into a double cross shape by means of the vertical plate 331a and the first horizontal plate 331b and the second horizontal plate 331c that divide it into two sides, thereby further increasing the capture area per unit area.

[0137] However, since the upper first horizontal plate 331b prevents gas from approaching the lower second horizontal plate 331c, exhaust holes 331d are formed along the length direction on the first horizontal plate 331b to ensure that gas can be smoothly supplied to the lower second horizontal plate 331c.

[0138] In addition, the second horizontal plate 331c located at the lower portion has a relatively larger cross-sectional area than the first horizontal plate 331b located at the upper portion, thereby forming a larger capture area, and is formed in a diamond shape whose width gradually increases from one side of the center of the capture disk 332 toward the outside, thereby increasing its capture area.

[0139] The double structure capture plate 331 with the above structure can make the unreacted gas descending from the top collide to form a vortex and reduce its flow rate before supplying it to the side direction. At the same time, it can also guide the unreacted gas flow in the length direction to achieve a capture effect.

[0140] The unreacted gas flow after the capture action will be discharged through the central exhaust hole 332a formed in the central part of the capture plate 332 and the long hole-shaped exhaust holes 322b arranged radially at various positions where the structural capture plate 331 is installed in the same way as the structural capture plate 331 of the lower capture plate 332.

[0141] In addition, a plurality of coupling parts 333 are formed protruding in the horizontal direction around the capture disc 332 of the third disc-shaped capture part 33, so as to facilitate the installation of the support rod 42 for connecting between the coupling parts formed in the fourth disc-shaped capture part 34. The support rod 42 passes through the fifth disc-shaped capture part 35, and is coupled and fixed between the main support rod 42 fixedly mounted on the lower plate and the inside by a full-thread bolt.

[0142] The fourth disk-type capturing section 34 discharges the gas flow supplied downward from the third disk-type capturing section 33 to the lower portion through the outer direction of the capturing disk 342 through the plurality of radially arranged double-structured capturing plates 341, and discharges the gas flow to the lower portion uniformly through the long hole-shaped exhaust holes 342a radially arranged on the lower capturing disk 342, thereby uniformly capturing the reaction by-products in the form of a thin film through the double-structured capturing plates 341 and the capturing disk 332.

[0143] At this time, exhaust disks 343 are formed at a certain interval in the center of the capture plate 342 toward the upper part, so that the descending gas collides and thereby improves the side exhaust efficiency through the double-structure capture plate 341.

[0144] The long hole-shaped exhaust holes 342a can be formed in a large area along the long double-structured capture plate 341 up to the vicinity of the center, so as to evenly discharge the exhaust holes 342a in a downward direction after the capture process.

[0145] The cross section of the double-structured capture plate 341 is formed into a double cross shape by means of the vertical plate 341a and the first horizontal plate 341b and the second horizontal plate 341c which divide it into two sides, thereby further increasing the capture area per unit area.

[0146] However, since the upper first horizontal plate 341b prevents gas from approaching the lower second horizontal plate 341c, exhaust holes 341d are formed along the length direction on the first horizontal plate 341b to ensure that gas can be smoothly supplied to the lower second horizontal plate 341c.

[0147] In addition, the second horizontal plate 341c located at the lower portion has a relatively larger cross-sectional area than the first horizontal plate 341b located at the upper portion, thereby forming a larger capture area, and is formed in a diamond shape whose width gradually increases from one side of the center of the capture disk 342 toward the outside, thereby increasing its capture area.

[0148] The double structure capture plate 341 with the structure as described above can cause the gas descending from the top to collide and form a vortex and reduce its flow rate before supplying it to the side direction. At the same time, it can also guide the gas flow in the length direction to achieve a capture effect.

[0149] Because an exhaust disk 343 is formed in the central portion of the above-mentioned capture disk 342, the main exhaust gas flow will be discharged through the long hole-shaped exhaust holes 342a arranged radially in the same manner as the double-structure capture plate 341 of the lower capture disk 342 at each position where the double-structure capture plate 341 is installed.

[0150] In addition, a plurality of coupling portions 344 are formed around the capture disk 342 of the fourth disk-shaped capture portion 34, which together with the coupling portions formed on the third disk-shaped capture portion 33 are coupled and fixed between the support rod 42 and the main support rod 43 fixedly mounted on the lower plate using full-thread bolts.

[0151] The fifth disk-type capturing portion 35 guides the gas flow supplied from the fourth disk-type capturing portion 34 in the downward direction to the outer direction through a plurality of radially arranged structural capturing plates 351, and then discharges the gas flow evenly to the lower portion through the radially arranged long hole-shaped exhaust holes 352a on the lower capturing disk 352 along the periphery and the radially arranged structural capturing plates 351, thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capturing plates 351 and the capturing disk 352.

[0152] At this time, the long hole-shaped exhaust holes 352a may be formed in a smaller area at the peripheral portion relatively far from the center along the shorter length of the structural capture plate 351, thereby uniformly supplying in the downward direction.

[0153] The number of the structural capture plates 351 formed in the fifth disc-shaped capture part 35 is relatively greater than the number of the double structural capture plates formed in the fourth disc-shaped capture part 34, thereby allowing the descending gas to form vortices at more locations. In addition, by forming the above-mentioned long hole-shaped exhaust holes 352a with a shorter length, the exhaust area can be relatively reduced and the time for the gas to stagnate can be increased, thereby ultimately achieving the effect of further mixing and uniformizing the temperature. Therefore, the gas flow can be stagnated and the capture efficiency can be improved.

[0154] In addition, the cross section of the structural capture plate 351 is formed into a cross shape by means of the vertical plate 351a and the horizontal plate 351b that divides it into two sides, thereby increasing the capture area per unit area.

[0155] The structural capture plate 351 with the structure as described above can cause the gas descending from the top to collide to form a vortex and reduce its flow rate before supplying it to the side direction. At the same time, it can also guide the gas flow in the length direction to achieve a capture effect.

[0156] The area without exhaust holes formed in the central portion of the capture plate 352 is larger than that of the capture plate 342 of the fourth plate-type capture part 34, and the gas flow will be discharged only through the exhaust holes 352a in the form of long holes arranged radially in the same manner as the structural capture plate 351 of the lower capture plate 352 at each position where the structural capture plate 351 is installed. The unreacted gas discharged through the side periphery after the capture process of the reaction by-products will be discharged through the gas exhaust port 17 formed in the central portion of the lower plate.

[0157] With the above-described configuration, the fifth disc-shaped capturing portion 35 can be formed to have a closed central portion, thereby preventing the exhaust gas from flowing outwardly downward due to the communication with the gas exhaust port 17 .

[0158] In addition, a plurality of joints 353 are formed around the capture disc 352 of the fifth disc-shaped capture part 35 to facilitate installation of a support rod 42 for connecting between the joints formed in the fourth disc-shaped capture part 34. The support rod 42 passes through the fifth disc-shaped capture part 35, and is fixedly connected to the main support rod 42 fixedly mounted on the lower plate and the interior thereof by fully threaded bolts.

[0159] In the reaction byproduct capture device applicable to the present invention constructed as described above, when the unreacted gas exhausted from the process chamber is supplied to the inner side of the housing body 11 through the gas inlet 15 installed on the upper plate 16 of the housing 1, multiple diffusion can occur in the process of passing through the internal diffuser plate 222 and the external diffuser plate 223 of the diffuser 22 heated by the heater 2, and a uniform flow rate can be achieved while flowing toward the inner wall side of the housing body, so that it can be supplied at a relatively low temperature compared to the high temperature of the dead zone (Dead Zone) at the lower part of the heater body 21 that generates heat when the power is loaded. At this time, through the cooling water flow path 12 formed on the upper plate, the temperature of the unreacted gas flowing toward the inner side of the housing body will reach a temperature that can capture the reaction byproducts. Thereby, the reaction byproducts can also be captured on the bottom surface of the upper plate and the upper area of ​​the inner wall of the housing body 11.

[0160] Next, the unreacted gas whose temperature is reduced while diffusing at a uniform flow rate will descend in the peripheral direction of the housing body 11 to the lower direction and flow into the upper peripheral side of the internal capture tower 3. Next, the unreacted gas will pass through the above-mentioned first disc-type capture section to the fifth disc-type capture section, each of which is equipped with a structural capture plate with a wide surface area, in sequence along the vertical direction, and the gas flow path will be stagnant while being concentrated to the central part by using an inclined guide, or the gas will be diffused in the outward or inward direction by using a structural capture plate and exhaust holes for forming a vortex flow, and the gas will be discharged downward to reduce the flow rate of the gas and increase the residence time, so that under the condition of reaching a temperature range that can be captured, the by-products contained in the unreacted gas discharged after the organic film deposition process is performed in the process chamber in the semiconductor manufacturing process are uniformly captured in the form of a thin film.

[0161] Fig.12 is a schematic diagram illustrating the gas flow inside a reaction byproduct capture device according to one embodiment of the present invention. Fig.13 is a flow rate pattern diagram inside a reaction byproduct capture device according to one embodiment of the present invention. Fig.14 FIG. 1 is a flow velocity vector diagram inside a reaction byproduct capture device according to an embodiment of the present invention.

[0162] As shown in the figure, by equipping a heater 2 that uses a diffuser 22 arranged radially in a double structure to uniformly conduct the heat source of the heater main body 21 while diffusing the unreacted gas that flows in, and an internal capture tower 3 composed of multiple disc-shaped capture parts arranged vertically in multiple layers in order to cause stagnation and conversion of the gas flow path and uniformly capture particulate reaction by-products in the form of a thin film, as shown in the accompanying drawings that illustrate different temperatures respectively, it can be confirmed that a symmetrically distributed gas flow (Gas Flow) is formed and a global flow rate reduction effect is achieved by forming a vortex, thereby ensuring the reaction time of the reaction by-products.

[0163] Fig.15 is a temperature pattern diagram inside a reaction byproduct capture device according to one embodiment of the present invention. Fig.16 This is a schematic diagram illustrating the capture tendency inside a reaction byproduct capture device according to one embodiment of the present invention.

[0164] As shown in the figure, the simulation results of the temperature mode for different temperatures show that, due to the influence of the heater, a dead zone where the reaction by-products cannot be captured occurs near the heater body inside the housing, but a uniform temperature distribution tendency can be maintained in all other areas. In other words, it can be confirmed that the temperature range that can capture the reaction by-products is ensured in most of the internal space area of ​​the housing.

[0165] The present invention is not limited to the specific preferred embodiments described above, and a person having general knowledge in the technical field to which the present invention belongs can make various modified implementations without departing from the gist of the present invention as required in the claims, and the above-mentioned changes are included in the scope described in the claims.

Claims

1. A device for capturing reaction byproducts generated in an organic film deposition process, characterized in that: A capture device for receiving a supply of unreacted gas exhausted after a reaction in a process chamber for performing an organic film deposition process in a semiconductor manufacturing process, and then capturing a reaction byproduct in a particle state with a lowered temperature in a capture available space after heating with a heater and exhausting the remaining gas, comprising: The housing (1) is used to receive and discharge the unreacted gas that flows in; The heater (2) is located inside the housing and diffuses the inflowing gas by using diffusers arranged in a double radial pattern to uniformly heat the gas; and The internal capture tower (3) is vertically arranged with a first disk-type capture section (31), a second disk-type capture section (32), a third disk-type capture section (33), a fourth disk-type capture section (34) and a fifth disk-type capture section (35) composed of radially arranged structural capture plates, wherein the surface area per unit area of ​​the structural capture plates in the horizontal direction is larger than that of the capture plates, and capture plates having exhaust holes formed in the center or in a radial arrangement for concentrated or dispersed discharge of the gas flow, Among them, the above-mentioned second disk-type capturing part (32) guides the supplied gas flow to the outside direction through a plurality of radially arranged structural capturing plates (321), and then utilizes the inclined guide (323) formed around the capturing disk (322) to block the gas flow supplied from the upper or side direction and gather it to the inside to make it stagnate, and discharges it evenly to the lower part through the long hole-shaped exhaust holes (322a) arranged radially along the radially arranged structural capturing plates (321), so that the reaction by-products are evenly captured in the form of a thin film through the structural capturing plates (321) and the capturing disk (322).

2. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The first disk-type capturing portion (31) guides the gas flow to the central portion through a plurality of radially arranged structural capturing plates (311), and discharges the gas flow to the lower portion through a central exhaust hole (312a) formed in the capturing disk (312) and a plurality of radially arranged nail-hole-shaped exhaust holes (312b), thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capturing plates (311) and the capturing disk (312).

3. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 2, characterized in that: The plurality of radially arranged structural capture plates (311) are formed by alternately installing large and long structural capture plates (311) and smaller and shorter structural capture plates (311) than the large and long structural capture plates (311).

4. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The inclined guide (323) is located in contact with the inner diameter surface of the shell body (11), thereby preventing the gas uniformly supplied to the uppermost first disc-shaped capture portion (31) from being directly supplied to the multiple disc-shaped capture portions present at the lower end of the second disc-shaped capture portion.

5. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The third disk-type capturing portion (33) discharges the supplied gas flow to the lower portion through the outer side of the capturing disk (332) through a plurality of radially arranged double-structured capturing plates (331) having a double structure in the vertical direction, and discharges the gas flow uniformly to the lower portion through a plurality of exhaust holes (332a) formed in the central portion of the lower capturing disk (332) and radially arranged long hole-shaped exhaust holes (332b), thereby uniformly capturing the reaction by-products in the form of a thin film through the double-structured capturing plates (331) and the capturing disk (332).

6. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The fourth disk-type capturing portion (34) discharges the supplied gas flow to the lower portion through the outer side of the capturing disk (342) through a plurality of radially arranged dual-structure capturing plates (341) having a dual structure in the vertical direction, and discharges the gas flow uniformly to the lower portion through the long hole-shaped exhaust holes (342a) radially arranged on the lower capturing disk (342), thereby uniformly capturing the reaction by-products in the form of a thin film through the dual-structure capturing plates (341) and the capturing disk (342).

7. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 6, characterized in that: Exhaust discs (343) are formed at a certain interval in the central portion of the capture plate (342) toward the upper portion, so that the descending gas collides and thereby improves the side exhaust efficiency through the double-structure capture plate (341).

8. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 5 or claim 6, characterized in that: The cross section of the double structure capture plate is formed into a double cross shape by means of a vertical plate and a first horizontal plate and a second horizontal plate dividing the vertical plate into two sides, and exhaust holes are formed in the first horizontal plate along the length direction.

9. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 8, characterized in that: The second horizontal plate has a larger cross-sectional area than the first horizontal plate located above the second horizontal plate, and is formed in a shape in which the width increases toward the outer side relative to the center of the capture plate.

10. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The fifth disc-type capturing portion (35) directs the supplied gas flow to the outside through a plurality of radially arranged structural capturing plates (351), and then discharges the gas flow evenly to the bottom through exhaust holes (352a) in the form of radially arranged long holes along the periphery of the capturing disc (352) having a smaller diameter than the capturing disc (342) of the fourth disc-type capturing portion (34) and the radially arranged structural capturing plates (351), thereby uniformly capturing the reaction by-products in the form of a thin film through the structural capturing plates (351) and the capturing discs (352).

11. The device for capturing reaction byproducts generated in an organic film deposition process according to any one of claims 1, 2 or 10, characterized in that: The cross section of the structural capture plate is formed into a cross shape by means of a vertical plate and a horizontal plate dividing the vertical capture plate into two sides.

12. The device for capturing reaction byproducts generated in an organic film deposition process according to claim 1, characterized in that: The heater (2) comprises: a heater body (21); a diffuser (22) arranged in multiple layers in a double structure, which is connected to the upper side of the heater body to supply the conducted heat source to the inflowing unreacted gas and diffuse it; The diffuser (22) comprises: a diffuser heat transfer plate (221) for transferring the heat source to a wider area than the heater body; a plurality of vertical internal diffuser plates (222) arranged in a radial circular shape in the central part of the diffuser heat transfer plate (221) to uniformly supply the heat source while diffusing the unreacted gas that flows in; and a plurality of vertical external diffuser plates (223) arranged in a radial circular shape along the periphery of the internal diffuser plates (222) in the diffuser heat transfer plate (221) to further subdivide the heat source while subdividing and diffusing the unreacted gas that flows in.

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