A driving circuit system for adjusting the conduction speed of a semiconductor switch

Abstract

The present invention discloses a driving circuit system for adjusting the conduction speed of a semiconductor switch, which is used to adjust the conduction speed of a voltage-controlled semiconductor switch, including a driving circuit with adjustable driving voltage, which is used to provide driving voltage signals with different amplitudes; a bipolar transistor, which is connected in series to the output end of the driving circuit, to adjust the magnitude of the driving current; a Zener diode and a resistor, which are connected in series to the base of the transistor, and form a closed loop with the driving circuit to control the base current of the transistor; a diode and a resistor, which are connected in parallel to the collector and emitter of the transistor, to achieve rapid shutdown of the semiconductor switch; and a selective resistance-capacitance branch, which is used to expand the adjustment range of the Miller platform and suppress Miller oscillation. The present invention controls the magnitude of the driving current by adjusting the amplitude of the driving voltage and the transistor, thereby regulating the Miller platform time, and then controlling the conduction speed of the voltage-controlled semiconductor switch, thereby achieving conduction speed regulation of the semiconductor switch.

Description

Technical Field

[0001] The invention belongs to the field of pulse power and power electronics technology, and in particular relates to regulating the conduction speed of a voltage-controlled semiconductor switch. The technology can be used in a solid-state high-voltage pulse power supply to regulate the edge of a pulse. Background Art

[0002] In recent years, high-voltage pulse power supplies are increasingly used in the fields of biology, food sterilization, chemical industry, and medical treatment, especially as an important excitation source for plasma discharge. Studies have shown that the edge speed of high-voltage pulses significantly affects the electron temperature and concentration of low-temperature plasma in dielectric barrier discharge. In magnetrons and solenoids, which are widely used in industry, pulses with certain edge speeds are required as excitation sources. Therefore, it is of great significance to study a drive circuit that can arbitrarily adjust the conduction speed of semiconductor switches within a certain range and use it to adjust the high-voltage pulse power supply of pulse edges.

[0003] At present, in the design of semiconductor switch driving circuits, the switch conduction speed is usually increased as much as possible to reduce switching losses. Usually, the gate resistance is changed or the driving current is increased to achieve fast conduction of the semiconductor switch. There are few circuits for adjusting the conduction speed. Usually, it is achieved by changing the gate resistance. However, this technology requires manual replacement or adjustment of the resistance value, and cannot achieve fast automatic control and adjustment effects. In addition, the adjustment range is small and the adjustment accuracy is poor.

[0004] In a high-voltage pulse power supply, there are multiple discharge switch tubes in the discharge unit that need to be turned on and off at the same time. When adjusting the edge of the high-voltage pulse power supply, the driving speed of all discharge tubes needs to be adjusted synchronously. All manual adjustment methods of the driving resistance or driving voltage are difficult to ensure that the driving speed of the discharge switch tubes of different units is consistent, resulting in poor practicality. For the edge adjustment method of the pulse power supply with a Marx structure, the opening timing of the discharge tube is mainly adjusted to make the opening start time of each level of the switch tube with a fixed delay, so that the pulses output at different levels are staggered and superimposed, and the slope of the pulse edge changes. Only the delay time needs to be changed to achieve the adjustment of the output pulse edge. This delayed conduction of the discharge switch tubes of different units can indeed adjust the edge slope of the pulse source of the Marx structure, but considering that the delay step should match the opening speed of the switch tube, this method has a limited adjustment range, the edge waveform will still have steps and is not smooth enough, and each level of the switch tube requires an independent signal to generate a delay, which is not conducive to the application in high-voltage pulse power supplies with many levels. Summary of the invention

[0005] Purpose of the invention: The purpose of the present invention is to solve the deficiencies in the prior art and to propose a driving circuit system that can continuously adjust the conduction speed of a semiconductor switch, which can be used to adjust the pulse edge of a high-voltage pulse power supply.

[0006] Technical solution: A driving circuit system for adjusting the conduction speed of a semiconductor switch according to the present invention, wherein the driving circuit system is used to control the conduction speed of a voltage-controlled semiconductor switch, comprising:

[0007] A driving circuit, used for generating a driving voltage signal with an adjustable driving voltage amplitude Vcc;

[0008] A PNP bipolar transistor, whose emitter is connected to the positive output terminal P+ of the driving circuit, and whose collector is connected to the gate or grid of the driven semiconductor switch S, is used to provide an appropriate driving current;

[0009] The base resistor is connected in series with the base of the PNP bipolar transistor to generate an appropriate base current;

[0010] A Zener diode, whose cathode is connected in series with the base resistor and whose anode is connected to the negative output terminal P- of the driving circuit, is used to generate an appropriate driving voltage threshold;

[0011] A diode and a resistor are connected in series, and are anti-parallel connected to the collector and the emitter of the PNP bipolar transistor, and the cathode of the diode is connected to the emitter of the PNP bipolar transistor;

[0012] The driving circuit, the emitter and base of the PNP bipolar transistor, the base resistor and the Zener diode form a series loop, and when the driving voltage amplitude changes, the driving current also changes accordingly;

[0013] The driving circuit, the emitter and collector of the PNP bipolar transistor and the control pin of the driven semiconductor switch S form a series loop to generate a driving voltage with an adjustable rising edge.

[0014] Furthermore, as long as the base resistor and the Zener diode satisfy a series relationship, their positions can be swapped.

[0015] Furthermore, the diode and the resistor connected in parallel between the collector and the emitter of the PNP bipolar transistor only need to satisfy a series relationship, and their positions can be swapped.

[0016] Furthermore, the driving voltage amplitude output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch S can be adjusted by directly providing an adjustable power supply voltage to the driving chip or by directly generating driving voltage signals with different amplitudes.

[0017] Furthermore, a resistor-capacitor series branch is connected between the gate and drain or the gate and collector of the driven semiconductor switch S.

[0018] The present invention also discloses another driving circuit system for adjusting the conduction speed of a semiconductor switch, wherein the driving circuit system is used to control the conduction speed of a voltage-controlled semiconductor switch, and comprises:

[0019] A driving circuit, used for generating a driving voltage signal with an adjustable driving voltage amplitude Vcc;

[0020] NPN bipolar transistor, whose collector is connected to the negative output terminal P- of the driving circuit, and whose emitter is connected to the source or emitter of the driven semiconductor switch, is used to provide an appropriate driving current;

[0021] The base resistor is connected in series with the base of the NPN bipolar transistor to generate an appropriate base current;

[0022] A Zener diode, whose anode is connected in series with the base resistor and whose cathode is connected to the positive output terminal P+ of the driving circuit, is used to generate an appropriate driving voltage threshold;

[0023] A diode and a resistor series branch are connected in anti-parallel with the collector and the emitter of the NPN bipolar transistor, and the cathode of the diode is connected to the collector of the NPN bipolar transistor;

[0024] The driving circuit, the emitter and base of the NPN bipolar transistor, the base resistor and the Zener diode form a series loop, and when the driving voltage amplitude changes, the driving current also changes accordingly;

[0025] The driving circuit, the emitter and collector of the NPN bipolar transistor and the control pin of the driven semiconductor switch form a series loop to generate a driving voltage with an adjustable rising edge.

[0026] Furthermore, as long as the base resistor and the Zener diode satisfy a series relationship, their positions can be swapped.

[0027] Furthermore, the diode and the resistor connected in parallel between the collector and the emitter of the NPN bipolar transistor only need to satisfy a series relationship, and their positions can be swapped.

[0028] Furthermore, the driving voltage amplitude output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch S can be adjusted by directly providing an adjustable power supply voltage to the driving chip or by directly generating driving voltage signals with different amplitudes.

[0029] Furthermore, a resistor-capacitor series branch is connected between the gate and drain or the gate and collector of the driven semiconductor switch S.

[0030] The above two working modes of the driving circuit system for adjusting the conduction speed of the semiconductor switch include a conduction mode and an off mode, which are described in detail below by taking driving MOSFET as an example.

[0031] Conduction mode: In the conduction mode, there are three main phases: startup phase, Miller plateau phase and conduction phase.

[0032] Startup phase: When the driver outputs the turn-on signal, the voltage mainly falls on the Zener diode, causing the Zener diode Z1 to break down, and then the base current rises rapidly to the residual voltage and the resistor R b The stable value determined by S, at this time the transistor works in the amplification area. gs Lift, U ce Gradually decreases, when U gs Rising to Miller platform voltage U pl When S ds Start to decline and gradually turn on.

[0033] Miller plateau stage: gate voltage U of S gs Keep constant, at this time the driving current I c C e Branch charging, during the Miller platform, the MOSFET U ds Gradually decreases to 0, S is fully turned on. e Suppress overcurrent and avoid Miller oscillation, which will cause the edge of the output pulse to be distorted. Under different driving voltages, the output current I of T1 during the Miller platform period is c There is a big difference, so the time to pass the Miller platform will be significantly different. cc When it increases, the driving current increases, the time for S to pass through the Miller platform is shortened, and U ds The downward slope becomes larger, and vice versa.

[0034] On stage: When S is fully turned on, the S gate voltage has reached V cc , T1 works in the saturation region, the output current is close to 0, and the transistor T1 works in a low power state for a long time during the conduction. ds When it is turned on, it drops to 0. At this time, the auxiliary capacitor C e The upper voltage is V dd .

[0035] Shutdown mode: When the switch tube S is turned off, in order to ensure that S is turned off quickly and stably, the drive voltage is set to a negative value. At this time, the U of the transistor T1 be The negative voltage is in the off state, while the bypass diode D1 is turned on by the positive voltage, and the off current flows through the bypass resistor R1 to turn off. A smaller off resistor R1 is set to offset the increase in C eThe impact caused by this is to increase the turn-off speed of the switch tube S.

[0036] Beneficial effect: The present invention controls the magnitude of the driving current by adjusting the amplitude of the driving voltage and the transistor, thereby regulating the Miller platform time, and further controlling the conduction speed of the voltage-controlled semiconductor switch, thereby realizing the conduction speed regulation of the semiconductor switch. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a circuit schematic diagram of a driving circuit proposed in one embodiment of the present invention;

[0038] Figure 2 is the phase relationship between the voltage drop of the switch tube and the driving signal in one embodiment of the present invention;

[0039] Figure 3 is a schematic diagram of the startup phase of the conduction mode from t0 to t2 in one embodiment of the present invention;

[0040] Figure 4 is a schematic diagram of the Miller platform phase of the t2-t3 conduction mode in one embodiment of the present invention;

[0041] Figure 5 is a schematic diagram of the conduction phase of the conduction mode t3~t4 in one embodiment of the present invention;

[0042] Figure 6 is a schematic diagram of a t5-t7 shutdown mode in one embodiment of the present invention;

[0043] Figure 7 is a diagram showing the relationship between a charge and discharge switch signal and an output pulse in one embodiment of the present invention;

[0044] Figure 8 FIG. 4 is a circuit schematic diagram of a driving circuit proposed in another embodiment of the present invention. DETAILED DESCRIPTION

[0045] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] In the description of the present invention, it should be noted that the directions or positional relationships indicated by terms such as "center", "up", "down", "left", "right", "inside" and "outside" are the directions or positional relationships shown, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0047] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0048] The present invention is further described in detail below through specific implementation examples in conjunction with the accompanying drawings.

[0049] Example 1

[0050] like Figure 1 As shown, a circuit schematic diagram of a driving circuit system for adjusting the conduction speed of a semiconductor switch includes a driving voltage circuit, a PNP bipolar transistor T1, a Zener diode Z1 and a base resistor R b , diode D1 and resistor R1, the driving voltage circuit is used to generate a voltage signal to turn on the MOSFET switch tube S, the PNP bipolar transistor is used to control the on-off speed of the MOSFET switch tube S, the Zener diode and resistor R b The diode D1 and the resistor R1 are used to determine the base current of the transistor, and the diode D1 and the resistor R1 are used to realize the fast shutdown of the MOSFET switch tube S.

[0051] like Figure 1 As shown, the positive output terminal P+ of the driving voltage circuit is connected to the emitter of the PNP bipolar transistor T1 and the cathode of the diode D1, and the negative output terminal P- is connected to the source of the MOSFET switch tube S and the positive electrode of the Zener diode Z1. b One end is connected, the collector is connected to the resistor R1 and the gate of the switch tube S; the base resistor R b The other end is connected to the cathode of the Zener diode Z1, and one end is connected to the base of the PNP bipolar transistor T1; the anode of the diode D1 is connected to the resistor R1, and the cathode of the diode D1 is connected to the positive polarity output terminal P+ of the drive circuit and the emitter of the PNP bipolar transistor T1; one end of the resistor R1 is connected to the anode of the diode D1, and the other end is connected to the collector of the PNP bipolar transistor T1 and the gate of the switch tube S.

[0052] Example 2

[0053] like Figure 1As shown, a circuit schematic diagram of a driving circuit system for adjusting the conduction speed of a semiconductor switch includes a driving voltage circuit, a PNP bipolar transistor T1, a Zener diode Z1 and a base resistor R b , diode D1 and resistor R1, RC resistor-capacitor branch (R e and C e ), the driving voltage circuit is used to generate a voltage signal to turn on the MOSFET switch tube S, the PNP bipolar transistor is used to control the on-off speed of the MOSFET switch tube S, the Zener diode and the resistor R b It is used to determine the base current of the transistor. The diode D1 and the resistor R1 are used to realize the rapid shutdown of the MOSFET switch tube S; the RC resistor-capacitor branch is used to increase the maximum time of the Miller platform and suppress Miller oscillation.

[0054] like Figure 1 As shown, the positive output terminal P+ of the driving voltage circuit is connected to the emitter of the PNP bipolar transistor T1 and the cathode of the diode D1, and the negative output terminal P- is connected to the source of the MOSFET switch tube S and the positive electrode of the Zener diode Z1. b One end is connected, the collector is connected to the resistor R1 and the gate of the switch tube S; the base resistor R b The other end is connected to the cathode of the Zener diode Z1, and one end is connected to the base of the PNP bipolar transistor T1; the anode of the diode D1 is connected to the resistor R1, and the cathode of the diode D1 is connected to the positive polarity output terminal P+ of the drive circuit and the emitter of the PNP bipolar transistor T1; one end of the resistor R1 is connected to the anode of the diode D1, and the other end is connected to the collector of the PNP bipolar transistor T1 and the gate of the switch tube S.

[0055] In this embodiment, the Zener diode Z1 and the base resistor R b As long as the series relationship is satisfied, their positions can be swapped. That is, the base of the PNP bipolar transistor T1 can be connected to the cathode of the Zener diode Z1, and the anode of the Zener diode Z1 can be connected to the base resistor R b One end is connected to the base resistor R b The other end is connected to the negative output terminal P- of the driving circuit.

[0056] In this embodiment, the diode D1 and the resistor R1 connected in parallel between the collector and the emitter of the PNP bipolar transistor only need to satisfy a series relationship, and their positions can be swapped, and the principle is the same as above.

[0057] In this embodiment, Figure 1 As shown, the driving voltage circuit is used to generate a voltage amplitude V to turn on the MOSFET switch tube S ccThe adjustable driving signal, in this embodiment, uses magnetic isolation driving to provide a driving signal with a negative voltage bias. In practice, an adjustable supply voltage V cc The power module supplies power to the driving circuit of the driving chip.

[0058] In this embodiment, Figure 1 As shown, the RC resistor-capacitor branch specifically includes a resistor R connected in parallel between the gate and drain of the switch tube S. e And the capacitor C e . R e Used to suppress Miller oscillation; C e Used to expand the adjustment range of the on-time.

[0059] Figure 2 It is the time phase relationship between the pulse edge and the driving signal in the embodiment of the present invention.

[0060] Figure 3 This is the start-up phase of the conduction mode in the embodiment of the present invention.

[0061] When the drive circuit outputs a turn-on signal at time t0, the voltage mainly falls on the Zener diode Z1, causing the Zener diode Z1 to break down. Then the base current I b Rapidly rises to the residual voltage and resistance R b The steady-state value determined by T1. T1 works in the amplification state. The base current I b is linearly amplified, the collector current I c The gate voltage U flows into the gate of the switch tube S, charging the equivalent capacitance inside the gate source. gs From the negative bias voltage U dn Starts to increase, the drain-source voltage U ds Remains unchanged until t1 U gs Rising to the threshold voltage U of the switch tube S gs(th) , the switch tube S starts to conduct. After t1, U ds Start to slowly descend, U gs Continue to rise to the Miller platform voltage U pl The start cycle ends at time t2.

[0062] Figure 4 It is the Miller plateau phase of the conduction mode in the embodiment of the present invention.

[0063] The gate voltage U of the switch tube S gs Keep constant, and it is in the Miller platform area during t2~t3. This period is called the Miller platform period. T1 is still working in the amplification state, and the collector current I c The same as at the beginning. During this period, the collector current I c The main flow into the capacitance between the gate and drain, the drain-source voltage U dsFrom the off state steady state value U dd The steady-state value U dson Linear decrease. This Miller plateau period is the dominant period for regulating the conduction speed of the switch tube S. ds The linear decrease of ensures that the pulse edge is smooth enough without staircase waves. Obviously, the equivalent gate-drain capacitance C e The larger the value, the wider the adjustment range of the pulse edge. In the actual drive circuit, due to the equivalent gate-drain capacitance C of the MOSFET gd The Miller plateau time is usually within a few hundred nanoseconds, so U ds The fall time T fu The adjustment range of T is very limited. fu In a short time, overshoot and oscillation will occur. To solve this problem, an RC resistor-capacitor branch (R e and C e ) is connected in parallel between the gate and drain. C e Increase the equivalent gate-drain capacitance, R e Overshoot and oscillation are limited. With this RC resistor-capacitor branch, the Miller platform time can be adjusted from tens of nanoseconds to tens of microseconds or even longer. By reducing the drive voltage amplitude V cc , I b and I c Will reduce, U ds The rate of decrease will also decrease. Therefore, the driving voltage amplitude V cc To adjust the conduction speed of the semiconductor switch S. In addition, since the transistor T1 works in the active mode in the Miller platform phase, the collector current I c Equal to the gain factor (β) multiplied by the base current I b By changing R b and Z1 to increase I b The adjustment range of the semiconductor switch also helps to expand the adjustment range of the conduction speed of the semiconductor switch.

[0064] Figure 5 It is the conduction phase of the conduction mode in the embodiment of the present invention.

[0065] During t3~t4, the collector current I c Mainly flows into the gate source of the switch tube S, U gs During this period, U pl Linearly rise to V cc During t4~t5, the PNP transistor T1 operates in saturation mode. At this time, the collector current I c Almost zero, the gate-source voltage U gs Keep constant. MOSFET S is fully turned on.

[0066] Figure 6 is the shutdown mode in the embodiment of the present invention.

[0067] During t5~t7, when the driver outputs a negative signal, MOSFET S operates in the off mode. During this period, PNP transistor T1 operates in the reverse active mode. The gate current flows through the transistor in the reverse direction, from the collector to the emitter. This reverse current is usually very low and can be almost ignored. Most of the reverse current flows into the driver circuit through the DR branch composed of resistor R1 and reverse diode D1 to shorten the turn-off time. The gate-source voltage U gs Drop to negative bias voltage value U dn And maintain, so that the switch tube S can be reliably turned off. Fast turn-off speed helps to reduce switching losses.

[0068] Figure 7 1 is a timing diagram of the driving signal and output voltage of the switch tube in an embodiment of the present invention.

[0069] like Figure 7 As shown, when the switch tube S is on for a period of t r , the conduction pulse width is t pw When the driving voltage signal lasts for t r +t pw , so as to ensure that the output pulse can reach the required pulse width and rising edge.

[0070] Example 3

[0071] like Figure 8 As shown, another circuit schematic diagram of a driving circuit system for adjusting the conduction speed of a semiconductor switch includes a driving voltage circuit, an NPN bipolar transistor T1, a Zener diode Z1 and a base resistor R b , diode D1 and resistor R1, RC resistor-capacitor branch (R e and C e ), the driving voltage circuit is used to generate a voltage signal to turn on the MOSFET switch tube S, the NPN bipolar transistor T1 is used to control the on-off speed of the MOSFET switch tube S, the Zener diode Z1 and the resistor R b It is used to determine the base current of the transistor. The diode D1 and the resistor R1 are used to realize the rapid shutdown of the MOSFET switch tube S; the RC resistor-capacitor branch is used to increase the maximum time of the Miller platform and suppress Miller oscillation.

[0072] like Figure 8 As shown, the negative output terminal P- of the driving voltage circuit is connected to the emitter of the NPN bipolar transistor T1 and one end of the resistor R1, and the positive output terminal P+ is connected to the gate of the MOSFET switch tube S and the negative electrode of the Zener diode Z1.b One end is connected, the collector is connected to the cathode of the diode D1 and the source of the switch tube S; the base resistor R b One end is connected to the anode of the Zener diode Z1, and the other end is connected to the base of the NPN bipolar transistor T1; the anode of the diode D1 is connected to the resistor R1, and the cathode of the diode D1 is connected to the source of the drive switch tube S and the collector of the NPN bipolar transistor T1; one end of the resistor R1 is connected to the anode of the diode D1, and the other end is connected to the emitter of the NPN bipolar transistor T1 and the negative polarity output terminal P- of the drive circuit.

[0073] In this embodiment, the Zener diode Z1 and the base resistor R b As long as the series relationship is satisfied, their positions can be swapped. That is, the base of the NPN bipolar transistor T1 can be connected to the positive electrode of the Zener diode Z1, and the cathode of the Zener diode Z1 can be connected to the base resistor R b One end is connected to the base resistor R b The other end is connected to the positive output terminal P+ of the driving circuit.

[0074] In this embodiment, the diode D1 and the resistor R1 connected in parallel between the collector and the emitter of the NPN bipolar transistor T1 only need to satisfy a series relationship, and their positions can be swapped, and the principle is the same as above.

[0075] In this embodiment, Figure 8 As shown, the driving voltage circuit is used to generate a voltage amplitude V to turn on the MOSFET switch tube S cc The adjustable driving signal, in this embodiment, uses magnetic isolation driving to provide a driving signal with a negative voltage bias. In practice, an adjustable supply voltage V cc The power module supplies power to the driving circuit of the driving chip.

[0076] In this embodiment, Figure 8 As shown, the RC resistor-capacitor branch specifically includes a resistor R connected in parallel between the gate and drain of the switch tube S. e And the capacitor C e . R e Used to suppress Miller oscillation; C e Used to expand the adjustment range of the on-time.

[0077] According to the driving circuit system solution for controlling the driving voltage to adjust the conduction speed of the semiconductor switch provided by the present invention, by adjusting the amplitude of the driving voltage, not only a wide range of edge regulation can be achieved, but also compared with the traditional method of changing the opening signal timing to adjust the output pulse edge, the complex signal timing and the independent signal driving circuit for each stage are omitted, thereby reducing the cost, and the driving voltage of different units in the high-voltage pulse power supply can be kept in consistent regulation, and the output pulse edge is smooth, which can further improve the regulation performance of the high-voltage pulse power supply.

[0078] The above description is only a preferred embodiment of the present invention and does not constitute any form of limitation to the present invention. Although the present invention has been disclosed as a preferred embodiment as above, it is not intended to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of the technical solution of the present invention.

Claims

1. A driving circuit system for adjusting the conduction speed of a semiconductor switch, characterized in that: The driving circuit system is used to control the conduction speed of a voltage-controlled semiconductor switch, and includes: A driving circuit, used for generating a driving voltage signal with an adjustable driving voltage amplitude Vcc; A PNP bipolar transistor, whose emitter is connected to the positive output terminal P+ of the driving circuit, and whose collector is connected to the gate or gate of the driven semiconductor switch to provide an appropriate driving current; The base resistor is connected in series with the base of the PNP bipolar transistor to generate an appropriate base current; A Zener diode, whose cathode is connected in series with the base resistor and whose anode is connected to the negative output terminal P- of the driving circuit, is used to generate an appropriate driving voltage threshold; A diode and a resistor series branch are connected in anti-parallel with the collector and the emitter of the PNP bipolar transistor, and the cathode of the diode is connected to the emitter of the PNP bipolar transistor; The driving circuit, the emitter and base of the PNP bipolar transistor, the base resistor and the Zener diode form a series loop, and when the driving voltage amplitude changes, the driving current also changes accordingly; The driving circuit, the emitter and collector of the PNP bipolar transistor and the control pin of the driven semiconductor switch form a series loop to generate a driving voltage with an adjustable rising edge.

2. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to claim 1, characterized in that: The base resistor and the Zener diode only need to be connected in series, and their positions can be swapped.

3. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to claim 1, characterized in that: The diode and the resistor connected in parallel between the collector and the emitter of the PNP bipolar transistor only need to satisfy a series relationship, and their positions can be swapped.

4. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to any one of claims 1 to 3, characterized in that: The driving voltage amplitude output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch can be adjusted by directly providing an adjustable power supply voltage to the driving chip or by directly generating driving voltage signals with different amplitudes.

5. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to any one of claims 1 to 3, characterized in that: A resistor-capacitor series branch is connected between the gate and drain or the gate and collector of the driven semiconductor switch.

6. A driving circuit system for adjusting the conduction speed of a semiconductor switch, characterized in that: The driving circuit system is used to control the conduction speed of a voltage-controlled semiconductor switch, and includes: A driving circuit, used for generating a driving voltage signal with an adjustable driving voltage amplitude Vcc; NPN bipolar transistor, whose emitter is connected to the negative output terminal P- of the driving circuit, and whose collector is connected to the source or emitter of the driven semiconductor switch, to provide appropriate driving current; The base resistor is connected in series with the base of the NPN bipolar transistor to generate an appropriate base current; A Zener diode, whose anode is connected in series with the base resistor and whose cathode is connected to the positive output terminal P+ of the driving circuit, is used to generate an appropriate driving voltage threshold; A diode and a resistor series branch are connected in anti-parallel with the collector and the emitter of the NPN bipolar transistor, and the cathode of the diode is connected to the collector of the NPN bipolar transistor; The driving circuit, the emitter and base of the NPN bipolar transistor, the base resistor and the Zener diode form a series loop, and when the driving voltage amplitude changes, the driving current also changes accordingly; The driving circuit, the emitter and collector of the NPN bipolar transistor and the control pin of the driven semiconductor switch form a series loop to generate a driving voltage with an adjustable rising edge.

7. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to claim 6, characterized in that: The base resistor and the Zener diode only need to be connected in series, and their positions can be swapped.

8. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to claim 6, characterized in that: The diode and resistor connected in parallel between the collector and emitter of the NPN bipolar transistor only need to satisfy a series relationship, and their positions can be swapped.

9. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to any one of claims 6 to 8, characterized in that: The driving voltage amplitude output by the driving circuit is adjustable, and the driving current and the conduction speed of the semiconductor switch can be adjusted by directly providing an adjustable power supply voltage to the driving chip or by directly generating driving voltage signals with different amplitudes.

10. A driving circuit system for adjusting the conduction speed of a semiconductor switch according to any one of claims 6 to 8, characterized in that: A resistor-capacitor series branch is connected between the gate and drain or the gate and collector of the driven semiconductor switch.

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