Microwave power switching circuit, device and control method

Abstract

This invention provides a microwave power switching circuit, device, and control method. The circuit includes an RF input port, a first matching element, a second matching element, at least one RF output port, and at least one switching module. Each switching module corresponds to one RF output port. Each switching module includes a first switching branch, which includes a first switching transistor, a second switching transistor, and an absorption load. Within the same first switching branch, the first switching transistor and the absorption load are connected in series, and the second switching transistor and the absorption load are connected in parallel. When the microwave power switching circuit is operating, the switching states of the first and second switching transistors within the same switching module are opposite, ensuring that the RF output port and RF input port corresponding to the switching module are either in a conducting state or an isolated state. This invention can reduce the insertion loss of the microwave power switching circuit and improve its isolation.

Description

Technical Field

[0001] This invention relates to the field of microwave technology, and in particular to a microwave power switching circuit, device, and control method. Background Technology

[0002] As a critical component of the transceiver front-end, microwave power switches significantly impact not only the efficiency of the transmitting channel but also the noise figure of the receiving channel due to their insertion loss and isolation. Reflective switches suffer from complete impedance mismatch at the isolation terminals, resulting in near-total reflection of the input signal. This can lead to malfunctions or even damage to downstream devices in certain applications. Absorbing switches, on the other hand, absorb the input signal by applying a load to the isolation terminal and matching the port impedance. For absorptive switches, both the conducting and isolation terminals must meet matching requirements, which undoubtedly increases circuit losses and worsens isolation compared to reflective switches.

[0003] Currently, there is a lack of an absorption-type switching circuit that can both reduce insertion loss and improve isolation. Summary of the Invention

[0004] This invention provides a microwave power switching circuit, device, and control method to address the current lack of an absorption-type switching circuit that can both reduce insertion loss and improve isolation.

[0005] In a first aspect, embodiments of the present invention provide a microwave power switching circuit, including an RF input port, a first matching element, a second matching element, at least one RF output port, and at least one switching module; the switching module and the RF output port correspond one-to-one.

[0006] The switching module includes a first switching branch; the first switching branch has a first end connected to the corresponding RF output port through a first matching element, and the first end is also connected to the RF input port through a second matching element, and the second end is grounded;

[0007] The first switching branch includes a first switching transistor, a second switching transistor, and a absorbing load;

[0008] In the same first switch branch, the first switch tube is connected in series with the absorption load, the second switch tube is connected in parallel with the absorption load, the first end of the first switch tube and the absorption load connected in series is connected to the first end of the first switch branch, and the second end of the first switch tube and the absorption load connected in series is connected to the second end of the first switch branch.

[0009] When the microwave power switching circuit is working, the switching states of the first switching transistor and the second switching transistor in the same switching module are opposite, so that the RF output port and the RF input port corresponding to the switching module are in a conducting state or an isolated state.

[0010] In one possible implementation, if the number of RF output ports is greater than or equal to 2, then when the microwave power switching circuit is working, the RF output port corresponding to one of the switching modules is in a conducting state with the RF input port, while the RF output ports corresponding to the other switching modules are in an isolated state with the RF input ports.

[0011] In one possible implementation, the switch module further includes N levels of second switch branches and N third matching elements, with the second switch branches and third matching elements corresponding one-to-one, and N≥1;

[0012] The first-stage second switch branch has its first terminal connected to the first terminal of the first switch branch via a corresponding third matching element, and its second terminal grounded; the Nth-stage second switch branch has its first terminal connected to the RF input port via a second matching element.

[0013] The first terminal of the second switch branch of the M-th stage is connected to the first terminal of the second switch branch of the (M-1)-th stage through the corresponding third matching element, and the second terminal is grounded; 2≤M≤N;

[0014] Each second switch branch includes a third switch transistor;

[0015] The third switch tube has its first end connected to the first end of its corresponding second switch branch, and its second end connected to the second end of its corresponding second switch branch.

[0016] When the microwave power switching circuit is working, the switching state of the third switching transistor in the same switching module is the same as that of the first switching transistor.

[0017] In one possible implementation, the third matching element is an impedance matching circuit.

[0018] In one possible implementation, both the first matching element and the second matching element are impedance matching circuits.

[0019] In one possible implementation, the microwave power switching circuit also includes a control module;

[0020] Both the first and second switching transistors are controlled by the control module.

[0021] In a second aspect, embodiments of the present invention provide a microwave power switching device, including a microwave power switching circuit as described in the first aspect or any possible implementation thereof.

[0022] Thirdly, embodiments of the present invention provide a control method that is applied to the microwave power switching circuit described in the first aspect or any possible implementation of the first aspect, or to the microwave power switching device described in the second aspect.

[0023] The above control methods include:

[0024] When the microwave power switching circuit is working, it controls one of the switching modules to be in a conducting state between its corresponding RF output port and RF input port, while controlling the other switching modules to be in an isolated state between their corresponding RF output ports and RF input ports.

[0025] In one possible implementation, controlling the RF output port and RF input port corresponding to one of the switching modules to be in a conducting state, and controlling the RF output ports and RF input ports corresponding to the other switching modules to be in an isolated state, including:

[0026] The first switch in one of the switching modules is controlled to be in the off state, and the second switch in one of the switching modules is controlled to be in the on state, so that the RF output port and RF input port corresponding to one of the switching modules are in the on state.

[0027] The first switching transistors in other switching modules are controlled to be in the ON state, and the second switching transistors in other switching modules are controlled to be in the OFF state, so that the RF output ports and RF input ports of the other switching modules are isolated.

[0028] In one possible implementation, controlling the RF output port and RF input port corresponding to one of the switching modules to be in a conducting state, and controlling the RF output ports and RF input ports corresponding to the other switching modules to be in an isolated state, further includes:

[0029] The third switch transistor in one of the switching modules is controlled to be in the off state, while the third switch transistors in the other switching modules are controlled to be in the on state.

[0030] This invention provides a microwave power switching circuit, device, and control method. The circuit includes an RF input port, a first matching element, a second matching element, at least one RF output port, and at least one switching module. The switching module and the RF output port correspond one-to-one. Each switching module includes a first switching branch. The first switching branch includes a first switching transistor, a second switching transistor, and an absorption load. In the same first switching branch, the first switching transistor and the absorption load are connected in series, and the second switching transistor and the absorption load are connected in parallel. This invention optimizes the insertion loss and isolation of the first switching branch by connecting the absorption load in parallel with the second switching transistor. By switching the second switching transistor to an on-state and an off-state, the absorption load is connected in parallel with the on-resistance and off-state capacitance of the second switching transistor, respectively. This reduces the insertion loss of the microwave power switching circuit and improves its isolation. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the structure of a microwave power switching circuit provided in an embodiment of the present invention;

[0033] Figure 2 This is a simplified equivalent circuit diagram of a microwave power switching circuit provided in an embodiment of the present invention;

[0034] Figure 3 This is a schematic diagram of a traditional microwave power switching circuit.

[0035] Figure 4 This is a simplified equivalent circuit diagram of a traditional microwave power switching circuit;

[0036] Figure 5 This is a schematic diagram of another microwave power switching circuit provided in an embodiment of the present invention;

[0037] Figure 6 This is a schematic diagram of a traditional two-stage single-pole double-throw absorber switch;

[0038] Figure 7 This is a schematic diagram of a two-stage single-pole double-throw absorber switch provided in an embodiment of the present invention;

[0039] Figure 8 This is a schematic diagram of the simulation results for a traditional two-stage single-pole double-throw absorber switch;

[0040] Figure 9 This is a schematic diagram of the simulation results of a two-stage single-pole double-throw absorber switch provided in an embodiment of the present invention. Detailed Implementation

[0041] To enable those skilled in the art to better understand this solution, the technical solutions in the embodiments of this solution will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this solution, not all of them. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this solution.

[0042] The term "comprising" and any other variations thereof in the specification, claims, and accompanying drawings of this invention mean "including but not limited to," and are intended to cover a non-exclusive inclusion, not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order.

[0043] Currently, for absorption switches, the following solutions aim to reduce insertion loss and improve isolation:

[0044] (1) For FET switching circuits, the resonant frequency of the switching transistor can be adjusted by connecting the switching transistor in parallel with an inductor or capacitor, so as to reduce the insertion loss of the absorptive switch and improve its isolation, without changing the circuit topology. However, this scheme has a narrow application bandwidth, especially in the low frequency band, and the parallel stubs are too large to be implemented.

[0045] (2) For PIN switch circuits, the isolation of the bias section is usually optimized or the parasitic parameters of the PIN switch are changed in order to reduce the insertion loss of the absorption switch and improve its isolation. However, this solution does not improve the circuit topology and does not optimize the performance at the circuit structure level.

[0046] (3) A solution that uses differential amplifiers to provide transmission and isolation channels to achieve high circuit isolation. However, because the power tolerance of differential amplifier tubes is very low, this solution cannot be applied to high-power circuits.

[0047] (4) Increasing the isolation by increasing the number of switching stages. Increasing the number of switching stages is the most direct way to optimize isolation, but each additional stage will not only increase the circuit area, but also introduce a certain insertion loss.

[0048] To address the above problems, this invention provides a microwave power switching circuit. The implementation of this invention will be described in detail below with reference to the accompanying drawings:

[0049] Figure 1 This is a schematic diagram of a microwave power switching circuit provided in an embodiment of the present invention. (Refer to...) Figure 1 The microwave power switching circuit includes an RF input port COM, a first matching element, a second matching element, at least one RF output port, and at least one switching module; the switching module and the RF output port correspond one-to-one.

[0050] The switching module includes a first switching branch; the first switching branch has a first end connected to the corresponding RF output port through a first matching element, and the first end is also connected to the RF input port through a second matching element, and the second end is grounded;

[0051] The first switching branch includes a first switching transistor, a second switching transistor, and a absorbing load;

[0052] In the same first switch branch, the first switch tube is connected in series with the absorption load, the second switch tube is connected in parallel with the absorption load, the first end of the first switch tube and the absorption load connected in series is connected to the first end of the first switch branch, and the second end of the first switch tube and the absorption load connected in series is connected to the second end of the first switch branch.

[0053] When the microwave power switching circuit is working, the switching states of the first switching transistor and the second switching transistor in the same switching module are opposite, so that the RF output port corresponding to the switching module is in a conducting state or an isolated state with respect to the RF output input.

[0054] It should be noted that, Figure 1 A microwave power switching circuit including two RF output ports and two switching modules is shown. RF1 and RF2 are both RF output ports, C and D are both first switching branches, SW1 and SW2 are both first switching transistors, SW3 and SW4 are both second switching transistors, R1 and R2 are both absorption loads, P1 and P2 are both first matching elements, and P3 and P4 are second matching elements. Figure 1 When the microwave power switching circuit shown is operating, the switching states of SW1 and SW3 are opposite; the switching states of SW2 and SW4 are opposite; the switching states of SW1 and SW4 are the same, both controlled by the control signal vg1, and they are simultaneously on and off; the switching states of SW2 and SW3 are the same, both controlled by the control signal vg2, and they are simultaneously on and off. The first and second matching elements can be designed with corresponding impedance matching circuits according to actual conditions, and no specific restrictions are imposed here.

[0055] In this configuration, the first switching transistor is connected in series with the absorption load, and the second switching transistor is connected in parallel with the absorption load. Alternatively, the first switching transistor can be connected in series with the absorption load through its source or drain, and the second switching transistor can be connected in parallel with the absorption load through its source and drain. The absorption load can be an absorption load resistor.

[0056] The microwave power switching circuit provided in this embodiment of the invention is an absorption-type switching circuit.

[0057] For any first switch branch, if the first switch transistor of the first switch branch is in the off state (i.e., closed state) and the second switch transistor of the first switch branch is in the on state (i.e., open state), then the RF output port and RF input port of the switch module where the first switch branch is located are in a conducting state; if the first switch transistor of the first switch branch is in the on state and the second switch transistor of the first switch branch is in the off state, then the RF output port and RF input port of the switch module where the first switch branch is located are in an isolated state.

[0058] In this embodiment, the number of switching modules and RF output ports can be set according to actual needs. When both are 1, the microwave power switching circuit is a single-pole single-throw switch circuit; when both are 2, the microwave power switching circuit is a single-pole double-throw switch circuit; when both are greater than 2, the microwave power switching circuit is a single-pole multi-throw switch circuit.

[0059] It should be noted that the idea of ​​reducing insertion loss and improving isolation by connecting the second switching transistor in parallel with the absorption load can be applied not only to single-pole single-throw switches, single-pole double-throw switches and single-pole multi-throw switches, but also to any other applicable switches, such as double-pole multi-throw switches, etc.

[0060] Figure 2 This is a simplified equivalent circuit diagram of the microwave power switching circuit provided in an embodiment of the present invention. Figure 1 and Figure 2 These are all schematic diagrams of single-pole double-throw switch circuits. See also... Figure 1 and Figure 2 RF1 and RF2 are both RF output ports, and COM is an RF input port. Taking RF1-COM as the on-state and RF2-COM as the off-state as the off-state, in this case, the first switching branch C is in a high-impedance state, the first switch SW1 is off, the second switch SW3 is on, and the absorption load R1 is short-circuited; simultaneously, the first switching branch D is in a low-impedance state, the first switch SW2 is on, the second switch SW4 is off, and the absorption load R2 is on. The specific analysis of this circuit is as follows:

[0061] The formula for the insertion loss (IL) of a parallel structure is:

[0062]

[0063] Where Y0 = 1 / Z0, Z0 is the characteristic impedance, and G H and B H The admittance Y under high resistance state of the parallel switch branch (i.e., the first switch branch) are respectively H From the real and imaginary parts, we can see that IL and G H and B H They are positively correlated.

[0064] Similarly, the formula for the isolation degree (ISO) of a parallel structure is:

[0065]

[0066] Where Y0 = 1 / Z0, Z0 is the characteristic impedance, and G L and B L The admittance Y of the parallel switch branch in low-resistance state are respectively L From the real and imaginary parts, we can see that ISO and G L and BL They are positively correlated.

[0067] Figure 3 This is a schematic diagram of a traditional microwave power switching circuit, or it can be considered a schematic diagram of a traditional absorption switching circuit. Figure 4 yes Figure 3 The diagram shows a simplified equivalent circuit of a conventional microwave power switching circuit. Conventional microwave power switching circuits do not have a switch connected in parallel at the absorption load.

[0068] See Figure 3 and Figure 4 When RF1-COM is on and RF2-COM is off, calculate the admittance of branch A in the high-impedance state.

[0069]

[0070] correspond and They are represented as follows:

[0071]

[0072]

[0073] See Figure 1 and Figure 2 When the first switch branch C is in a high-resistance state, R1 and R on3 By connecting in parallel, the admittance of branch C in the high-resistivity state can be obtained.

[0074]

[0075] correspond and They are represented as follows:

[0076]

[0077]

[0078] and Figure 3 and Figure 4 Compared to branch A in the middle, Figure 1 and Figure 2 In the first switch branch C, R1 and R on3 Parallel connection (R1 is about 50Ω, R on3 (approximately 2Ω), equivalent to and R1 in the equation decreases. and As a function, R1 in The intervals are all monotonically increasing. Because C off1Generally, it is in the 100fF level. Therefore, in the frequency range of less than 30GHz, according to formula (1-1), under high impedance, the insertion loss of the first switching branch C is always less than that of branch A, that is, the insertion loss of the microwave power switching circuit provided in this application is reduced.

[0079] according to Figure 3 and Figure 4 Calculate the admittance of branch B in the low-resistance state.

[0080]

[0081]

[0082]

[0083] according to Figure 1 and Figure 2 Calculate the admittance of the first switch branch D in the low-resistance state.

[0084]

[0085] correspond and They are represented as follows:

[0086]

[0087]

[0088] Comparing the low-resistivity branches B and D, branch B is equivalent to C. off4 =0. If C off4 ≠0, and According to formula (1-2), under low impedance conditions, the isolation of branch D is always greater than that of branch B, which means that the isolation of the microwave power switch circuit provided in this application is increased.

[0089] Based on the above circuit theory analysis, it can be seen that the microwave power switching circuit provided in this embodiment of the invention has a significant advantage over traditional absorption-type switching circuits in the frequency range of less than 30GHz. This is achieved by optimizing the insertion loss and isolation of the parallel switching branches.

[0090] The microwave power switching circuit provided in this embodiment of the invention includes an RF input port, a first matching element, a second matching element, at least one RF output port, and at least one switching module; the switching module and the RF output port correspond one-to-one; the switching module includes a first switching branch; the first switching branch includes a first switching transistor, a second switching transistor, and an absorption load; in the same first switching branch, the first switching transistor and the absorption load are connected in series, and the second switching transistor and the absorption load are connected in parallel. This embodiment of the invention optimizes the insertion loss and isolation of the first switching branch by connecting the absorption load in parallel with the second switching transistor, and by switching the second switching transistor to an on-state and an off-state, so that the absorption load is connected in parallel with the on-resistance and off-state capacitance of the second switching transistor, respectively. This reduces the insertion loss of the microwave power switching circuit and improves its isolation.

[0091] In some embodiments, if the number of RF output ports is greater than or equal to 2, when the microwave power switching circuit is working, the RF output port corresponding to one of the switching modules is in a conducting state with the RF input port, while the RF output ports corresponding to the other switching modules are in an isolated state with the RF input ports.

[0092] In this embodiment, when the number of RF output ports is greater than or equal to 2, that is, when the number of switch modules is greater than or equal to 2, if the microwave power switch circuit is working, the RF output port and RF input port corresponding to one of the switch modules in the circuit are in a conducting state, while the RF output ports and RF input ports corresponding to the other switch modules are in an isolated state. The other switch modules are those switch modules other than the one whose corresponding RF output port and RF input port are in a conducting state.

[0093] In one possible implementation, if the number of RF output ports is 1, then when the microwave power switch circuit is working, the RF input port and the RF output port of the circuit are either in a conducting state or in an isolated state.

[0094] In one possible implementation, if the number of RF output ports is greater than or equal to 2, then when the microwave power switching circuit is working, the RF output port corresponding to at least one of the switching modules is in a conducting state with the RF input port, while the RF output ports corresponding to the other switching modules are in an isolated state with the RF input ports.

[0095] In some embodiments, see Figure 5 The switch module also includes N-level second switch branches and N third matching elements, with one-to-one correspondence between the second switch branches and the third matching elements, and N≥1;

[0096] The first-stage second switch branch has its first terminal connected to the first terminal of the first switch branch via a corresponding third matching element, and its second terminal grounded; the Nth-stage second switch branch has its first terminal connected to the RF input port via a second matching element.

[0097] The first terminal of the second switch branch of the M-th stage is connected to the first terminal of the second switch branch of the (M-1)-th stage through the corresponding third matching element, and the second terminal is grounded; 2≤M≤N;

[0098] Each second switch branch includes a third switch transistor;

[0099] The third switch tube has its first end connected to the first end of its corresponding second switch branch, and its second end connected to the second end of its corresponding second switch branch.

[0100] When the microwave power switching circuit is working, the switching state of the third switching transistor in the same switching module is the same as that of the first switching transistor.

[0101] The first and second terminals of the third switch can be the source and drain of the third switch, respectively.

[0102] See Figure 5 SW11, SW12, SW21, and SW22 are all third switching transistors, and the branches containing each third switching transistor are all second switching branches. P5, P6, P7, and P8 are all third matching elements. P5 is the third matching element corresponding to the second switching branch where SW11 is located, P6 is the third matching element corresponding to the second switching branch where SW21 is located, P7 is the third matching element corresponding to the second switching branch where SW12 is located, and P8 is the third matching element corresponding to the second switching branch where SW22 is located.

[0103] In this embodiment, the value of N can be set according to actual needs, and no specific restrictions are imposed here. The third matching element can be designed as an impedance matching circuit according to actual needs, and no specific restrictions are imposed here.

[0104] In the same switching module, the switching state of each third switch is consistent with the switching state of the first switch.

[0105] In some embodiments, the third matching element is an impedance matching circuit.

[0106] In some embodiments, both the first matching element and the second matching element are impedance matching circuits.

[0107] In this embodiment, impedance matching circuits corresponding to the first matching element, the second matching element, and each of the third matching elements can be designed according to actual needs. The impedance matching circuits corresponding to the first matching element, the second matching element, and the third matching element can be different, and the impedance matching circuits corresponding to different third matching elements can also be different. The impedance matching circuit can include at least one of the following components: inductor, capacitor, and microstrip line.

[0108] In some embodiments, the microwave power switching circuit further includes a control module;

[0109] Both the first and second switching transistors are controlled by the control module.

[0110] The control module is connected to the gates of both the first and second switching transistors and is used to control the switching states of the first and second switching transistors.

[0111] In one possible implementation, all third switching transistors are controlled by a control module. The control module is connected to the gate of the third switching transistor and is used to control the switching state of the third switching transistor.

[0112] The type of switching transistor used in this embodiment is not specifically limited; any suitable switching transistor may be used.

[0113] In a specific application scenario, taking a two-stage GaN single-pole double-throw (SPDT) absorption 100W power switch (8-10GHz) as an example, the schematic diagram of a traditional two-stage SPDT absorption switch is as follows: Figure 6 As shown, the schematic diagram of the two-stage single-pole double-throw absorber switch provided by this invention is as follows. Figure 7 As shown. The switching transistors SW1, SW2, SW11, and SW21 in both circuits are of the same size, while SW3 and SW4 are of appropriate size. SW3 is connected in parallel with the absorption load R1, and SW4 is connected in parallel with the absorption load R2. The control logic of SW1, SW11, and SW4 is the same, as is the control logic of SW2, SW21, and SW3.

[0114] When RF1-COM is on and RF2-COM is off, a traditional two-stage single-pole double-throw absorber switch (such as...) Figure 6 With SW1 and SW11 turned off, and SW2 and SW22 turned on, the simulation results obtained under the best matching are as follows: Figure 8 As shown (insertion loss is 0.70dB-0.75dB, isolation is 27dB-29dB); the two-stage single-pole double-throw absorber switch provided by this invention (such as...) Figure 7 With SW1, SW11, and SW4 turned off, and SW2, SW21, and SW3 turned on, the simulation results obtained under optimal matching are as follows: Figure 9As shown (insertion loss is 0.55dB-0.60dB, isolation is 28dB-30dB). Comparison Figure 8 and Figure 9 It can be seen that the absorption switch provided by the present invention has little difference in the standing wave ratio of the conduction path compared with the traditional absorption switch, the standing wave ratio of the isolation path is optimized to a certain extent, the insertion loss is reduced by 0.15dB, and the isolation is increased by 1dB.

[0115] As can be seen from the above comparison, the absorption switch provided in this embodiment of the invention optimizes the insertion loss and isolation of the overall circuit by connecting the absorption load in parallel with the switch. The absorption switch has lower insertion loss and higher isolation, which is of great significance in practical engineering applications.

[0116] It should be noted that the circuits in the accompanying drawings of this application are schematic diagrams based on a single-pole double-throw switch. In practical applications, the number of RF output ports and switch modules can be set according to actual needs, and no specific restrictions are imposed here.

[0117] Corresponding to the microwave power switching circuit described above, this embodiment of the invention also provides a microwave power switching device, which includes the microwave power switching circuit as described in any of the above embodiments, and has the same beneficial effects as the microwave power switching circuit.

[0118] Corresponding to the microwave power switching circuit or microwave power switching device described above, this embodiment of the invention provides a control method that is applied to the microwave power switching circuit or microwave power switching device described in any of the above embodiments.

[0119] The above control methods include:

[0120] When the microwave power switching circuit is working, it controls one of the switching modules to be in a conducting state between its corresponding RF output port and RF input port, while controlling the other switching modules to be in an isolated state between their corresponding RF output ports and RF input ports.

[0121] In some embodiments, controlling the RF output port and RF input port corresponding to one of the switching modules to be in a conducting state, and controlling the RF output ports and RF input ports corresponding to other switching modules to be in an isolated state, includes:

[0122] The first switch in one of the switching modules is controlled to be in the off state, and the second switch in one of the switching modules is controlled to be in the on state, so that the RF output port and RF input port corresponding to one of the switching modules are in the on state.

[0123] The first switching transistors in the other switching modules are all in the ON state, and the second switching transistors in the other switching modules are all in the OFF state, so that the RF output port and RF input port corresponding to the other switching modules are isolated.

[0124] In some embodiments, controlling the RF output port and RF input port corresponding to one of the switching modules to be in a conducting state, and controlling the RF output ports and RF input ports corresponding to other switching modules to be in an isolated state, further includes:

[0125] The third switching transistors in one of the switching modules are controlled to be in the off state, while the third switching transistors in the other switching modules are controlled to be in the on state.

[0126] For a detailed description of the control method, please refer to the specific description of the microwave power switching circuit mentioned above, which will not be repeated here.

[0127] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A microwave power switching circuit, characterized in that, It includes an RF input port, a first matching element, a second matching element, at least one RF output port, and at least one switch module; the switch module and the RF output port correspond one-to-one. The switching module includes a first switching branch; the first switching branch has a first end connected to the corresponding RF output port through the first matching element, and the first end is also connected to the RF input port through the second matching element, and the second end is grounded; The first switching branch includes a first switching transistor, a second switching transistor, and a absorbing load; In the same first switch branch, the first switch tube is connected in series with the absorption load, the second switch tube is connected in parallel with the absorption load, the first end of the first switch tube and the absorption load connected in series is connected to the first end of the first switch branch, and the second end of the first switch tube and the absorption load connected in series is connected to the second end of the first switch branch. When the microwave power switching circuit is working, the switching states of the first switching transistor and the second switching transistor in the same switching module are opposite, so that the RF output port corresponding to the switching module is in a conducting state or an isolated state from the RF input port. Wherein, the absorption load is an absorption load resistor.

2. The microwave power switching circuit as described in claim 1, characterized in that, If the number of RF output ports is greater than or equal to 2, then when the microwave power switch circuit is working, the RF output port corresponding to one of the switch modules is in a conducting state with the RF input port, while the RF output ports corresponding to the other switch modules are in an isolated state with the RF input port.

3. The microwave power switching circuit as described in claim 1, characterized in that, The switching module further includes N-level second switching branches and N third matching elements, wherein the second switching branches and the third matching elements correspond one-to-one, and N≥1; The first-stage second switch branch has its first terminal connected to the first terminal of the first switch branch via a corresponding third matching element, and its second terminal grounded; the Nth-stage second switch branch has its first terminal connected to the RF input port via the second matching element. The first terminal of the second switch branch of the M-th stage is connected to the first terminal of the second switch branch of the (M-1)-th stage through the corresponding third matching element, and the second terminal is grounded; 2≤M≤N; Each second switch branch includes a third switch transistor; The third switch tube has its first end connected to the first end of its corresponding second switch branch, and its second end connected to the second end of its corresponding second switch branch. When the microwave power switching circuit is working, the switching state of the third switching transistor in the same switching module is the same as the switching state of the first switching transistor.

4. The microwave power switching circuit as described in claim 3, characterized in that, The third matching element is an impedance matching circuit.

5. The microwave power switching circuit as described in claim 1, characterized in that, Both the first matching element and the second matching element are impedance matching circuits.

6. The microwave power switching circuit according to any one of claims 1 to 5, characterized in that, The microwave power switching circuit also includes a control module; Both the first and second switching transistors are controlled by the control module.

7. A microwave power switching device, characterized in that, Includes the microwave power switching circuit as described in any one of claims 1 to 6.

8. A control method, characterized in that, Applied to the microwave power switching circuit as described in any one of claims 1 to 6 or the microwave power switching device as described in claim 7; The control method includes: When the microwave power switching circuit is working, it controls the RF output port and RF input port corresponding to one of the switching modules to be in a conducting state, and controls the RF output ports and RF input ports corresponding to the other switching modules to be in an isolated state.

9. The control method as described in claim 8, characterized in that, The control of one of the switching modules to ensure that its RF output port and RF input port are in a conducting state, and the control of the RF output ports of the other switching modules to ensure that their RF input ports are in an isolated state, includes: The first switch in one of the switching modules is controlled to be in the off state, and the second switch in one of the switching modules is controlled to be in the on state, so that the RF output port and RF input port corresponding to one of the switching modules are in the on state. The first switching transistors in the other switching modules are all controlled to be in the ON state, and the second switching transistors in the other switching modules are all controlled to be in the OFF state, so that the RF output ports and RF input ports corresponding to the other switching modules are isolated from each other.

10. The control method as described in claim 9, characterized in that, The method of controlling one of the switching modules to be in a conducting state between its corresponding RF output port and RF input port, and controlling the RF output ports of other switching modules to be in an isolated state from the RF input port, further includes: The third switching transistors in one of the switching modules are controlled to be in the off state, while the third switching transistors in the other switching modules are controlled to be in the on state.

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