electronic devices

Abstract

The present invention discloses an electronic device, which includes a substrate, a biometric identification area, a chip, a first flat layer, a first light-shielding layer, and an antenna. The biometric identification area is located on the substrate and includes at least one first active element and at least one photosensitive element. The photosensitive element is located on the first active element and is electrically connected to the first active element, and the photosensitive element has a photosensitive layer. The chip is located on the substrate and has a second active element. The first flat layer is located on the first active element and the second active element. The first light-shielding layer is located on the first flat layer, and the first light-shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer. The antenna is located on the first flat layer, and the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer.

Description

Technical Field

[0001] The present invention relates to an electronic device. Background Art

[0002] Near Field Communication (NFC) technology allows two electronic devices equipped with antennas to communicate wirelessly within a few centimeters of each other. This contactless data exchange mechanism offers advantages such as high response speed, high security, and convenience, making it an essential component in communication products.

[0003] In order to provide under-screen fingerprint recognition, current display devices need to be equipped with the required sensing circuits on the display device. However, adding an antenna device to the display device not only increases the overall thickness of the display device but also requires an assembly step. Summary of the Invention

[0004] The present invention provides an electronic device that can provide short-range wireless communication and under-screen fingerprint recognition functions.

[0005] An electronic device according to one embodiment of the present invention includes a substrate, a biometric identification area, a chip, a first flat layer, a first light-shielding layer, and an antenna. The biometric identification area is located on the substrate and includes at least one first active element and at least one photosensitive element. The photosensitive element is located on the first active element and is electrically connected to the first active element, and the photosensitive element has a photosensitive layer. The chip is located on the substrate and has a second active element. The first flat layer is located on the first active element and the second active element. The first light-shielding layer is located on the first flat layer, and the first light-shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer. The antenna is located on the first flat layer, and the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer.

[0006] Based on the above, in the electronic device of the present invention, the first light-shielding layer has at least one first opening, which overlaps the photosensitive layer. The first loop and the first light-shielding layer are formed from the same film layer. In other words, the first loop and the first light-shielding layer can be defined through the same patterning process. Therefore, without increasing the number of photomasks and the cost, the design of the first loop of the electronic device combined with the photosensitive element can provide near-field wireless communication and under-screen fingerprint recognition functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The following detailed description, when read in conjunction with the accompanying drawings, will provide an understanding of the various aspects of the present invention. It should be noted that many features in the drawings are not drawn to scale according to standard practice in the field. In fact, the dimensions of the features described may be arbitrarily increased or decreased to facilitate clarity of discussion.

[0008] Figure 1is a top view schematic diagram of an electronic device according to an embodiment of the present invention;

[0009] Figure 2 It is along Figure 1 A schematic cross-sectional view of the section line A-A';

[0010] Figure 3 It is a three-dimensional schematic diagram of the antenna;

[0011] Figure 4 is a top schematic diagram of a display device according to an embodiment of the present invention;

[0012] Figure 5 is a schematic top view of an electronic device according to another embodiment of the present invention;

[0013] Figure 6 It is along Figure 5 A schematic cross-sectional view of the section line B-B';

[0014] Figure 7 is a schematic top view of an electronic device according to another embodiment of the present invention;

[0015] Figure 8 FIG. 4 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present invention.

[0016] Explanation of symbols

[0017] 10: Electronic devices

[0018] 12: Display

[0019] 14: Display device

[0020] 20, 30, 40: Electronic devices

[0021] 100:Substrate

[0022] 102:Biometric identification area

[0023] 104: Chip

[0024] 106: first insulating layer

[0025] 108: first light shielding layer

[0026] 110: Antenna

[0027] 110a: First loop

[0028] 110b: Second loop

[0029] 110c: The third round

[0030] 112: Second light shielding layer

[0031] 114: Third light shielding layer

[0032] 116: Gate drive circuit on array

[0033] 118: Source drive circuit

[0034] 120: Test circuit

[0035] 121: External circuit

[0036] 122: Protective glass

[0037] 122a: Surface

[0038] 200: Antenna

[0039] 210a: First loop

[0040] 210b: Second loop

[0041] 310: Antenna

[0042] 310a: First Loop

[0043] 414: third light shielding layer

[0044] A-A': section line

[0045] B-B': Section line

[0046] BP1: First protective layer

[0047] BP2: Second protective layer

[0048] BP3: The third protection layer

[0049] CF: Color filter layer

[0050] CH1, CH2: channel region

[0051] DR1a, DR2a: drain lightly doped region

[0052] DR1b, DR2b: heavily doped drain regions

[0053] D1, D2: drain

[0054] d1: direction

[0055] E1: lower electrode

[0056] E2: Upper electrode

[0057] GI: Gate insulation layer

[0058] G1, G2: Gate

[0059] ILD: Interlayer insulation layer

[0060] LS: Microlens

[0061] OP1: First opening

[0062] OP2: Second opening

[0063] OP3: The third opening

[0064] PD: Photosensitive element

[0065] PL1: First flat layer

[0066] PL2: Second flat layer

[0067] PL3: Third flat layer

[0068] PS: interstitial

[0069] P1: pad

[0070] SC1, SC2: semiconductor layer

[0071] SL: Photosensitive layer

[0072] SR1a, SR2a: lightly doped source regions

[0073] SR1b, SR2b: heavily doped source regions

[0074] S1, S2: source

[0075] T1: The first active element

[0076] T2: Second active element DETAILED DESCRIPTION

[0077] Figure 1 is a top view of an electronic device 10 according to an embodiment of the present invention. Figure 2 It is along Figure 1 Please refer to the cross-sectional diagram of the section line A-A' Figure 1 and Figure 2 The electronic device 10 includes a substrate 100, a biometric identification area 102, and a chip 104. The biometric identification area 102 is located on the substrate 100. The biometric identification area 102 includes at least a first active device T1 and a photosensitive device PD. The photosensitive device PD is located on the first active device T1 and is electrically connected to the first active device T1.

[0078] For example, the first active device T1 includes a semiconductor layer SC1, a gate G1, a source S1, and a drain D1. The gate G1, source S1, and drain D1 may be made of a highly conductive metal, such as aluminum, molybdenum, titanium, or copper. The chip 104 is located on the substrate 100 and includes a second active device T2. For example, the second active device T2 includes a semiconductor layer SC2, a gate G2, a source S2, and a drain D2. The gate G2, source S2, and drain D2 may be made of a highly conductive metal, such as aluminum, molybdenum, titanium, or copper.

[0079] The electronic device 10 further includes a gate insulating layer GI, an interlayer insulating layer ILD, and a first insulating layer 106. The gate insulating layer GI, the interlayer insulating layer ILD, and the first insulating layer 106 may be made of a transparent insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, etc., but the present invention is not limited thereto. The semiconductor layers SC1 and SC2 may be made of a silicon semiconductor material (such as polycrystalline silicon, amorphous silicon, etc.), an oxide semiconductor material, or an organic semiconductor material.

[0080] The area where the semiconductor layer SC1 overlaps the gate G1 can be considered the channel region CH1 of the first active device T1. The area where the semiconductor layer SC1 overlaps the gate G1 can be considered the channel region CH1 of the first active device T1. A gate insulation layer GI is located between the gate G1 and the semiconductor layer SC1, and between the gate G2 and the semiconductor layer SC2. An interlayer insulation layer ILD is disposed between the source S1 and the gate G1, and between the drain D1 and the gate G1. Furthermore, an interlayer insulation layer ILD is disposed between the source S2 and the gate G2, and between the drain D2 and the gate G2.

[0081] The semiconductor layer SC1 includes a lightly doped source region SR1a, a heavily doped source region SR1b, a lightly doped drain region DR1a, a heavily doped drain region DR1b, and a channel region CH1. The source electrode S1 and the drain electrode D1 penetrate the interlayer insulating layer ILD and the gate insulating layer GI to electrically connect the heavily doped source region SR1b and the heavily doped drain region DR1b of the semiconductor layer SC1, respectively.

[0082] The semiconductor layer SC2 includes a lightly doped source region SR2a, a heavily doped source region SR2b, a lightly doped drain region DR2a, a heavily doped drain region DR2b, and a channel region CH2. The source electrode S2 and the drain electrode D2 penetrate the interlayer insulating layer ILD and the gate insulating layer GI to electrically connect the heavily doped source region SR2b and the heavily doped drain region DR2b of the semiconductor layer SC2, respectively.

[0083] The photosensitive element PD includes a lower electrode E1, a photosensitive layer SL, and an upper electrode E2. The lower electrode E1 is located on the interlayer insulating layer ILD, the photosensitive layer SL is located on the lower electrode E1, and the upper electrode E2 is located on the photosensitive layer SL. The photosensitive element PD is electrically connected to the drain D1 of the first active element T1 via the lower electrode E1. In this embodiment, the lower electrode E1 and the drain D1 of the first active element T1 are formed from the same film layer and the same material. The upper electrode E2 is, for example, a light-transmitting electrode. The material of the light-transmitting electrode includes a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above.

[0084] In this embodiment, the electronic device 10 further includes a first planar layer PL1, a first light-shielding layer 108, and an antenna 110. The first planar layer PL1 is located on the first active device T1 and the second active device T2. For example, the first planar layer PL1 is located on the drains D1 and D2 and the sources S1 and S2. The first light-shielding layer 108 is located on the first planar layer PL1 and has at least one first opening OP1. The first opening OP1 overlaps the photosensitive layer SL, filtering out light with large angles while retaining light with small angles.

[0085] The first insulating layer 106 has an opening exposing the photosensitive layer SL. The top electrode E2 of the photosensitive element PD extends into the opening to cover the portion of the photosensitive layer SL exposed by the opening. In this embodiment, the photosensitive layer SL is made of silicon-rich oxide (SRO) or other suitable materials.

[0086] Figure 3 This is a three-dimensional schematic diagram of the antenna 110. Please refer to Figures 1 to 3 The antenna 110 includes a first loop 110a. The first loop 110a and the first light-shielding layer 108 are formed from the same film layer and material. In other words, the first loop 110a and the first light-shielding layer 108 can be defined through the same patterning process. Therefore, without increasing the number of photomasks and cost, the antenna 110 of the electronic device 10, combined with the photosensitive element PD and the first light-shielding layer 108, can provide near-field wireless communication and under-screen fingerprint recognition. The antenna 110 is made of a blackened metal (i.e., a low-reflectivity metal) or a combination of metal and metal oxide to enhance optical performance.

[0087] In this embodiment, the top-view outline of the antenna 110 is rectangular, but the present invention is not limited thereto. The top-view outline of the antenna 110 can be configured in conjunction with the outline of the biometric identification area 102. For example, the top-view outline of the antenna 110 can be any shape such as circular or elliptical.

[0088] The drain D2 of the second active element T2 overlaps a portion of the first loop 110a of the antenna 110, enabling the electronic device 10 to have a narrow bezel. The antenna 110 surrounds the biometric identification area 102 when viewed from above the substrate 100, and the first loop 110a extends through the first planar layer PL1 to electrically connect to the drain D2 of the second active element T2. The antenna 110 also includes a pad P1, which is used to connect the antenna 110 to the drain D2 of the second active element T2. In this embodiment, the pad P1 and the upper electrode E2 are formed from the same film layer; in other words, the pad P1 and the upper electrode E2 can be made of the same material. Therefore, the antenna 110 can be electrically connected to the drain D2 without increasing the number of photomasks and cost.

[0089] In one embodiment, the electronic device 10 further includes a first protective layer BP1, a second protective layer PL2, a second protective layer BP2, a third protective layer PL3, and a third protective layer BP3 sequentially disposed on the first planar layer PL1. The first protective layer BP1, the second planar layer PL2, the second protective layer BP2, the third planar layer PL3, and the third protective layer BP3 may be formed of a transparent insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, but the present invention is not limited thereto.

[0090] In one embodiment, the electronic device 10 further includes a second light-shielding layer 112. The second light-shielding layer 112 is located on the first light-shielding layer 108 and has at least one second opening OP2. The second opening OP2 overlaps the first opening OP1. The antenna 110 further includes a second loop 110b. The second loop 110b and the second light-shielding layer 112 are formed from the same film layer. In other words, the second loop 110b and the second light-shielding layer 112 can be defined through the same patterning process. Therefore, without increasing the number of photomasks and cost, the antenna 110 of the electronic device 10, combined with the photosensitive element PD and the second light-shielding layer 112, can provide near-field wireless communication and under-screen fingerprint recognition functions.

[0091] In one embodiment, the electronic device 10 further includes a third light-shielding layer 114 and a plurality of microlenses LS. The third light-shielding layer 114 is located on the first flat layer PL1 and has a plurality of third openings OP3. The microlenses LS are located in each third opening OP3 of the third light-shielding layer 114. One of the microlenses LS overlaps with the photosensitive layer SL. The antenna 110 further has a third loop 110c. The third loop 110c and the third light-shielding layer 114 are the same film layer. In other words, the third loop 110c and the third light-shielding layer 114 can be defined by the same patterning process. Therefore, without increasing the number of photomasks and the cost, the antenna 110 of the electronic device 10, in combination with the photosensitive element PD and the third light-shielding layer 114, can provide short-range wireless communication and under-screen fingerprint recognition functions. For the convenience of explanation, Figure 1The second loop 110b and the third loop 110c are omitted.

[0092] The first loop 110 a , the second loop 110 b , and the third loop 110 c of the antenna 110 overlap with each other in the normal direction of the substrate 100 , thereby enabling the electronic device 10 to have a narrow frame.

[0093] In one embodiment, the electronic device 10 may include an on-array gate driver circuit 116, a source driver circuit 118, and a test circuit 120. The on-array gate driver circuit 116 is located on opposite sides of the biometric identification region 102, while the source driver circuit 118 and the test circuit 120 are located on opposite sides of the biometric identification region 102. The electronic device 10 is electrically connected to an external circuit 121, which may be bonded to conductive lines (not shown) on the substrate 100 via a chip-on-film (COF) bonding process, a chip-on-glass (COG) bonding process, or other methods.

[0094] Figure 4 FIG1 is a top view of a display device 14 according to one embodiment of the present invention. Display device 14 includes a display 12 and an electronic device 10. Electronic device 10 provides near-field wireless communication and under-screen fingerprint recognition capabilities for display device 14. Display 12 may be, for example, an organic light-emitting diode (OLED) display or a micro-LED display.

[0095] Figure 5 is a schematic top view of an electronic device 20 according to another embodiment of the present invention. Figure 6 It is along Figure 5 Please refer to the cross-sectional diagram of the section line B-B' Figure 5 and Figure 6 The difference between the electronic device 20 of this embodiment and the electronic device 10 lies in that the second loop 210b is connected to and surrounded by the first loop 210a. The first and second loops 210a, 210b, are formed from the same film layer. In other words, the first and second loops 210a, 210b, and first light-shielding layer 108 can be formed through the same patterning process. Therefore, without increasing the number of photomasks and cost, the antenna 200, combined with the photosensitive element PD and the first light-shielding layer 108, in the electronic device 20 can provide both near-field wireless communication and under-display fingerprint recognition.

[0096] Figure 7 is a top view of an electronic device 30 according to another embodiment of the present invention. Figure 6The main difference between the electronic device 20 and the electronic device 30 is that the first loop 310a of the antenna 310 of the electronic device 30 extends in a direction away from the biometric identification area 102, such as in the direction d1, to connect to the second active element (not shown) of the chip 104.

[0097] Figure 8 FIG2 is a cross-sectional schematic diagram of an electronic device 40 according to another embodiment of the present invention. The electronic device 40 of this embodiment differs from the electronic device 10 in that the electronic device 40 further includes a protective glass 122. The protective glass 122 has a surface 122 a facing the substrate 100. A third light-shielding layer 414 is located on the surface 122 a of the protective glass 122 and has a plurality of third openings OP3. A microlens LS is located in each of the third openings OP3 of the third light-shielding layer 414. One of the microlenses LS overlaps the photosensitive layer SL.

[0098] The electronic device 40 further includes a color filter layer CF and spacers PS. The color filter layer CF is located on the protective glass 122 and may include RGB color layers. The spacers PS are located between the protective glass 122 and the substrate 100 to maintain a certain distance between the protective glass 122 and the substrate 100 .

[0099] In summary, in the electronic device of the present invention, the first light-shielding layer has at least one first opening, which overlaps the photosensitive layer. The first loop and the first light-shielding layer are formed from the same film layer. In other words, the first loop and the first light-shielding layer can be defined through the same patterning process. Therefore, without increasing the number of photomasks and the resulting cost, the design of the electronic device's first loop combined with the photosensitive element can provide near-field wireless communication and under-screen fingerprint recognition functions.

Claims

1. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first flat layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; an antenna located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer; and The second light shielding layer is located on the first light shielding layer and has at least one second opening. The second opening overlaps the first opening. The antenna also has a second loop. The second loop and the second light shielding layer are the same film layer.

2. The electronic device according to claim 1, further comprising: A third light shielding layer is located on the first flat layer and has a plurality of third openings; and A plurality of micro lenses are located in each of the third openings of the third light shielding layer, wherein one of the micro lenses overlaps the photosensitive layer. The antenna further has a third loop, and the third loop and the third light shielding layer are the same film layer. 3 . The electronic device as claimed in claim 2 , wherein the first loop, the second loop, and the third loop of the antenna overlap with each other in a normal direction of the substrate.

4. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first flat layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; an antenna located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer; and The second loop is connected to the first loop and surrounded by the first loop, wherein the first loop and the second loop are made of the same film layer.

5. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first flat layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; an antenna located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer; and a protective glass having a surface facing the substrate; A third light-shielding layer is located on the surface of the protective glass and has a plurality of third openings; and A plurality of micro lenses are located in each of the third openings of the third light shielding layer, wherein one of the micro lenses overlaps with the photosensitive layer.

6. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first planar layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; and The antenna is located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light shielding layer are the same film layer, The second active element has a drain, and the drain overlaps a portion of the first loop of the antenna.

7. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first planar layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; and The antenna is located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light shielding layer are the same film layer, The first loop of the antenna extends in a direction away from the biometric feature identification area to connect to the second active component of the chip.

8. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first planar layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; and The antenna is located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light shielding layer are the same film layer, The antenna surrounds the biometric feature identification area in a top-view direction of the substrate, and the first loop penetrates the first flat layer to be electrically connected to the second active element.

9. An electronic device comprising: substrate; A biometric identification area is located on the substrate and includes: at least one first active element; and At least one photosensitive element, located on the first active element and electrically connected to the first active element, the photosensitive element having a photosensitive layer; a chip located on the substrate and having a second active component; A first planar layer is located on the first active element and the second active element; A first light shielding layer is located on the first planar layer, the first light shielding layer has at least one first opening, and the first opening overlaps the photosensitive layer; and An antenna is located on the first flat layer, wherein the antenna has a first loop, and the first loop and the first light-shielding layer are the same film layer; The antenna further includes a pad, and the photosensitive element further includes an upper electrode. The upper electrode is located on the photosensitive layer, and the pad and the upper electrode are the same film layer. 10 . The electronic device according to claim 1 , wherein the antenna is made of blackened metal or a combination of metal and metal oxide.

Images