Process container, plasma processing device and manufacturing method of process container

Abstract

The present invention provides a processing container capable of suppressing particle generation and achieving discharge stabilization, a plasma processing apparatus, and a manufacturing method of the processing container. The processing container of the present invention is used to constitute a plasma processing apparatus, is capable of housing a substrate inside and performing plasma processing on the substrate, and is characterized in that a first insulating film is formed on at least a portion of a first inner side surface in the processing container which is exposed to plasma, a second insulating film is formed on a back surface of a protective surface material which opposes the first insulating film and which at least protects the first inner side surface from plasma, and the first insulating film and the second insulating film are in surface contact.

Description

Technical Field

[0001] This invention relates to a processing container, a plasma processing apparatus, and a method for manufacturing a processing container. Background Technology

[0002] Patent Document 1 discloses a processing container capable of internally accommodating a workpiece and performing plasma treatment on it. The processing container includes: a container body having an opening; and protective components for protecting the container body from damage caused by plasma and / or corrosive gases. The protective components include: a first protective component disposed along the inner wall of the container body; and a second protective component disposed around the opening, separate from and detachably disposed from the first protective component. Using the processing container disclosed in Patent Document 1, the protective components protecting the inner surface of the processing container can be easily replaced, thus reducing component costs.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2009-140939 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The present invention provides a processing container, a plasma processing apparatus, and a method for manufacturing the processing container, which can suppress particle generation and achieve discharge stabilization.

[0008] Means for solving technical problems

[0009] One aspect of the present invention provides a processing container for constituting a plasma processing apparatus, capable of housing a substrate and performing plasma processing on the substrate, characterized in that: a first insulating film is formed on at least a portion of a first inner surface of the processing container exposed to plasma, and a second insulating film is formed on a back side of a protective material that at least protects the first inner surface from the influence of plasma, opposite to the first insulating film, wherein the first insulating film and the second insulating film are in surface contact.

[0010] Invention Effects

[0011] Using this invention, particle generation can be suppressed and discharge stabilization can be achieved. Attached Figure Description

[0012] Figure 1 This is a longitudinal cross-sectional view illustrating an example of a processing container and an example of a plasma processing apparatus according to an embodiment.

[0013] Figure 2 It is Figure 1 Enlarged longitudinal section view of Part II.

[0014] Explanation of reference numerals in the attached figures

[0015] 18, 18a, 18b: First inner surface; 20: Processing container; 40, 40A, 40B: Protective face material; 40b: Back side; 41: Second insulating film; 43, 43A, 43B: First insulating film; 100: Plasma processing device; G: Substrate. Detailed Implementation

[0016] Hereinafter, a processing container, a plasma processing apparatus, and a method for manufacturing a processing container according to embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, repetitive descriptions of substantially the same constituent elements are sometimes omitted by using the same reference numerals.

[0017] [Processing container, plasma processing apparatus, and method for manufacturing the processing container according to embodiments]

[0018] Reference Figure 1 and Figure 2 An example of a processing container, plasma processing apparatus, and method for manufacturing a processing container according to embodiments of the present invention will be described here. Figure 1 This is a longitudinal cross-sectional view illustrating an example of a processing container and an example of a plasma processing apparatus according to an embodiment. Figure 2 It is Figure 1 Enlarged longitudinal section view of Part II.

[0019] Figure 1The plasma processing apparatus 100 shown is an inductively coupled plasma (ICP) processing apparatus used to perform various substrate processing methods on a rectangular substrate G (hereinafter referred to as "substrate") for a flat panel display (FPD). Glass is primarily used as the substrate material; depending on the application, transparent synthetic resins are sometimes used. Substrate processing includes etching and film formation using CVD (Chemical Vapor Deposition). Examples of FPDs include liquid crystal displays (LCDs), electroluminescent displays (ELs), and plasma display panels (PDPs). Besides the method of forming circuit patterns on its surface, the substrate also includes a support substrate. Furthermore, the planar dimensions of the FPD substrate have increased significantly with each generation. The planar dimensions of the substrate G processed by the plasma processing apparatus 100 range from approximately 1500mm × 1800mm in the 6th generation to approximately 3000mm × 3400mm in the 10.5th generation. Additionally, the thickness of the substrate G is approximately 0.2mm to a few millimeters.

[0020] Figure 1 The plasma processing apparatus 100 shown includes: a rectangular box-shaped processing container 20; a substrate mounting stage 70, which is rectangular in shape when viewed from above, disposed within the processing container 20 for mounting a substrate G; and a control unit 90. Alternatively, the processing container may be a cylindrical box-shaped or an elliptical box-shaped container, in which case the substrate mounting stage may also be circular or elliptical, and the substrate mounted on the substrate mounting stage may also be circular, etc.

[0021] The processing container 20 is divided into two spaces, upper and lower, by a metal window 30. The antenna chamber A, which serves as the upper space, is formed by an upper chamber 13, and the processing chamber S, which serves as the lower space, is formed by a lower chamber 17. In the processing container 20, a rectangular annular support frame 14 is provided at the boundary between the upper chamber 13 and the lower chamber 17, protruding inward from the processing container 20. The metal window 30 is mounted on the support frame 14.

[0022] The upper chamber 13 forming the antenna chamber A is formed by side walls 11 and top plate 12, and is made of metal such as aluminum or aluminum alloy as a whole.

[0023] The lower chamber 17, which has a processing chamber S inside, is formed by a side wall 15 and a bottom plate 16, and is made of a metal such as aluminum or aluminum alloy as a whole. In addition, the side wall 15 is grounded through a grounding wire 21.

[0024] The first inner surfaces 18a and 18b of the sidewalls 15 and the base plate 16, respectively, facing the processing chamber S, are the sides exposed to plasma. In the lower chamber 17, in the entire area of ​​the first inner surfaces 18a and 18b of the sidewalls 15 and the base plate 16, or in areas where plasma resistance is particularly required, [equipment / materials] are installed. Figure 2 The protective material 40 is shown. The structure of the first inner surface 18 protected by the protective material 40 will be described in detail below.

[0025] The support frame 14 is formed of conductive metals such as aluminum or aluminum alloys, and can also be called a metal frame.

[0026] A rectangular annular (endless) sealing groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17. An O-ring or other sealing component 23 is embedded in the sealing groove 22. The abutting surface of the support frame 14 holds the sealing component 23, thereby forming a sealing structure between the lower chamber 17 and the support frame 14.

[0027] An inlet / outlet 15a is provided on the side wall 15 of the lower chamber 17 for feeding and discharging the substrate G relative to the lower chamber 17. The inlet / outlet 15a can be opened and closed by a gate valve 24. A conveying chamber (not shown) containing a conveying mechanism is adjacent to the lower chamber 17. The gate valve 24 is controlled to open and close, and the substrate G is fed and discharged via the inlet / outlet 15a using the conveying mechanism.

[0028] Furthermore, multiple exhaust ports 16a are provided on the base plate 16 of the lower chamber 17, and a gas exhaust pipe 25 is connected to each exhaust port 16a. The gas exhaust pipe 25 is connected to the exhaust device 27 via an on / off valve 26. The gas exhaust pipe 25, the on / off valve 26, and the exhaust device 27 form a gas exhaust section 28. The exhaust device 27 has a vacuum pump such as a turbomolecular pump, which can evacuate the lower chamber 17 to a specified vacuum level during processing. In addition, a pressure gauge (not shown) is provided at an appropriate location in the lower chamber 17, and the monitoring information obtained from the pressure gauge is sent to the control unit 90.

[0029] The substrate stage 70 has a substrate 71 and an electrostatic chuck 76 formed on the upper surface 71a of the substrate 71.

[0030] The substrate 71 has a rectangular shape when viewed from above, and has planar dimensions similar to those of the substrate G placed on the substrate stage 70. The length of the long side of the substrate 71 can be set to approximately 1800 mm to 3400 mm, and the length of the short side can be set to approximately 1500 mm to 3000 mm. The thickness of the substrate 71 relative to these planar dimensions can be, for example, approximately 50 mm to 100 mm.

[0031] A temperature regulating medium flow path 72a is provided in the substrate 71, which travels in a curved manner covering the entire area of ​​a rectangular plane. This temperature regulating medium flow path 72a is formed of stainless steel, aluminum, or aluminum alloy. Alternatively, the temperature regulating medium flow path 72a may also be provided in the electrostatic chuck 76. Furthermore, the substrate 71 may not be a single component, as shown in the example, but rather a laminate of two components made of aluminum or aluminum alloy.

[0032] On the bottom plate 16 of the lower chamber 17, a box-shaped pedestal 78 with a stepped portion on the inner side, formed of insulating material, is fixed, and a substrate mounting stage 70 is mounted on the stepped portion of the pedestal 78.

[0033] An electrostatic chuck 76 capable of directly mounting the substrate G is formed on the upper surface 71a of the substrate 71. The electrostatic chuck 76 has: a ceramic layer 74 as a dielectric film formed by spraying ceramic such as alumina; and a conductive layer 75 (electrode) with electrostatic adsorption function embedded inside the ceramic layer 74.

[0034] The conductive layer 75 is connected to the DC power supply 85 via the power supply line 84. When the switch (not shown) provided on the power supply line 84 is turned on by the control unit 90, a DC voltage can be applied from the DC power supply 85 to the conductive layer 75 to generate a Coulomb force. This Coulomb force can be used to electrostatically attract the substrate G to the upper surface of the electrostatic chuck 76, and the substrate G is held in a state where it is placed on the upper surface 71a of the substrate 71.

[0035] In the substrate 71 constituting the substrate stage 70, a temperature regulating medium flow path 72a is provided, which travels in a curved manner covering the entire area of ​​a rectangular plane. At both ends of the temperature regulating medium flow path 72a, there are: a delivery pipe 72b for supplying temperature regulating medium to the temperature regulating medium flow path 72a; and a return pipe 72c for discharging the temperature regulating medium that has been heated while flowing in the temperature regulating medium flow path 72a.

[0036] like Figure 1As shown, the conveying flow path 87 and the return flow path 88 are connected to the conveying pipe 72b and the return pipe 72c, respectively, and are connected to the cooling device 86. The cooling device 86 has a main body for controlling the temperature and discharge flow rate of the temperature regulating medium, and a pump (not shown) for pressurizing and conveying the temperature regulating medium. A refrigerant can be used as the temperature regulating medium, such as Galden (registered trademark), Fluorinert (registered trademark), etc. The temperature regulation method illustrated in the figure is that the temperature regulating medium flows through the substrate 71, but it can also be a method where the substrate 71 has a built-in heater, or a method where temperature regulation is performed using both the temperature regulating medium and the heater. Alternatively, temperature regulation can be performed by circulating a high-temperature temperature regulating medium instead of a heater, accompanied by heating. The heater, which is a resistive element, can be formed from tungsten, molybdenum, or any of these metals in combination with alumina, titanium, etc. In addition, in the example shown, a temperature regulating medium flow path 72a is formed in the substrate 71, but it is also possible for an electrostatic chuck 76 to have a temperature regulating medium flow path.

[0037] A temperature sensor (not shown), such as a thermocouple, is provided on the substrate 71. Monitoring information obtained from the temperature sensor is continuously transmitted to the control unit 90. Then, based on the transmitted monitoring information, the control unit 90 performs temperature regulation control on the substrate 71 and the substrate G. More specifically, the control unit 90 regulates the temperature and / or flow rate of the temperature regulating medium supplied from the cooling device 86 to the delivery flow path 87. Then, temperature regulation control of the substrate mounting stage 70 is performed by circulating the temperature-regulated and / or flow-regulated temperature regulating medium in the temperature regulating medium flow path 72a. Alternatively, the temperature sensor, such as a thermocouple, may also be provided on, for example, an electrostatic chuck 76.

[0038] A stepped portion is formed by the outer periphery of the electrostatic chuck 76 and the substrate 71 and the upper surface of the stage 78, and a rectangular frame-shaped focusing ring 79 is mounted on this stepped portion. With the focusing ring 79 mounted on the stepped portion, the upper surface of the focusing ring 79 is set to be lower than the upper surface of the electrostatic chuck 76. The focusing ring 79 is formed of ceramic such as alumina or quartz.

[0039] The power supply component 80 is connected to the lower surface of the substrate 71. A power supply line 81 is connected to the lower end of the power supply component 80, and the power supply line 81 is connected to a high-frequency power supply 83, which serves as a bias power supply, via an impedance matching device 82. By applying a high-frequency power of, for example, 3.2 MHz, to the substrate stage 70 from the high-frequency power supply 83, an RF bias can be generated, attracting ions generated by the high-frequency power supply 56, which serves as a plasma generation power supply as described below, to the substrate G. Therefore, in the plasma etching process, both the etching rate and the etching selectivity can be improved simultaneously. In this way, the substrate stage 70 can hold the substrate G and form a bias electrode for generating the RF bias. At this time, the portion inside the cavity that becomes a ground potential functions as the counter electrode of the bias electrode, forming a high-frequency power return circuit. Alternatively, the metal window 30 can be configured as part of the high-frequency power return circuit. The metal window 30 is formed by a plurality of segmented metal windows 31. The number of segmented metal windows 31 forming the metal window 30 can be set to various numbers such as 12 or 24.

[0040] The segmented metal window 31 includes a conductor plate 32 and a spray plate 34. Both the conductor plate 32 and the spray plate 34 are formed of aluminum, aluminum alloys, or stainless steel, which are non-magnetic, conductive, and corrosion-resistant metals or metals with corrosion-resistant surface treatments. Corrosion-resistant surface treatments include, for example, anodizing or ceramic spraying. Alternatively, the exposed surface 34a of the spray plate 34 facing the treatment chamber S may be coated with a plasma-resistant coating obtained through anodizing or ceramic spraying. The conductor plate 32 is grounded via a grounding wire (not shown), and the spray plate 34 is also grounded via the conductor plate 32 connected to it.

[0041] Each segmented metal window 31 constituting the metal window 30 is suspended from the top plate 12 of the upper chamber 13 by multiple suspenders (not shown). Above each segmented metal window 31, a spacer (not shown) formed of an insulating component is provided, and a high-frequency antenna 51 is provided at intervals between the spacer and the conductor plate 32. The high-frequency antenna 51 contributes to plasma generation and can be formed by winding and installing antenna wires made of a metal with good conductivity such as copper in a loop or spiral shape. For example, the looped antenna wires can be arranged in multiple layers. The high-frequency antenna 51 is located on the upper surface of the segmented metal window 31 and is therefore suspended from the top plate 12 via the segmented metal window 31.

[0042] A gas diffusion groove 33 is formed on the lower surface of the conductor plate 32, and a through hole 32b is provided to connect the gas diffusion groove 33 to the upper end face 32a. A gas inlet pipe 52 is embedded in the through hole 32b. A plurality of gas release holes 35 are provided in the spray plate 34, which communicate with the gas diffusion groove 33 of the conductor plate 32 and the processing chamber S. The spray plate 34 is connected to the lower surface of the region outside the gas diffusion groove 33 of the conductor plate 32 by metal screws (not shown). Alternatively, the gas diffusion groove may be formed on the upper surface of the spray plate.

[0043] Each segmented metal window 31 is electrically insulated from the support frame 14 and adjacent segmented metal windows 31 by an insulating member 37. Here, the insulating member 37 is formed of a fluoropolymer such as PTFE (Polytetrafluoroethylene). The end face 37a of the insulating member 37 facing the treatment chamber S and the exposed surface 34a of the spray plate 34 facing the treatment chamber S are coplanar. An insulating cover member 38 covers the end face 37a of the insulating member 37 and is arranged across the exposed surface 34a of adjacent spray plates 34. This cover member 38 is formed of ceramic such as alumina.

[0044] The insulating component 37 is formed of a resin such as PTFE, which has high insulation performance and is lightweight. However, compared with ceramics such as alumina, the resin has low plasma resistance. Moreover, it is difficult to apply a plasma-resistant coating to the surface of the resin through anodizing or ceramic spraying. Therefore, in the plasma treatment apparatus 100, the insulating component 37 is protected from plasma by covering the end face 37a of the treatment chamber S side of the insulating component 37 with a cover component 38, for example, made of ceramic. Each insulating component 37 that insulates the support frame 14 from the partition metal window 31 and adjacent partition metal windows 31 is covered by the cover component 38.

[0045] The power supply component 53, which extends to the top of the upper chamber 13, is connected to the high-frequency antenna 51. The power supply line 54 is connected to the upper end of the power supply component 53 and is connected to the high-frequency power supply 56 via a matching device 55 for impedance matching.

[0046] By applying a high-frequency electrical power of, for example, 13.56 MHz to the high-frequency antenna 51 from the high-frequency power supply 56, an induced electric field can be formed within the lower chamber 17. Using this induced electric field, the processing gas supplied from the spray plate 34 to the processing chamber S can be plasmaized to generate an inductively coupled plasma, and the ions in the plasma can be provided to the substrate G.

[0047] The high-frequency power supply 56 is the power source for plasma generation, and the high-frequency power supply 83, connected to the substrate stage 70, serves as a bias power source to attract and kinetic energy to the generated ions. By using inductive coupling to generate plasma as an ion source and connecting the bias power supply, which serves as another power source, to the substrate stage 70 for ion energy control, plasma generation and ion energy control can be performed independently, increasing the degree of freedom in the process.

[0048] like Figure 1 As shown, the gas inlet pipes 52 of each of the segmented metal windows 31 converge at one point in the antenna chamber A, and the upward-extending gas inlet pipes 52 are hermetically inserted through the supply port 12a opened in the top plate 12 of the upper chamber 13. Furthermore, the gas inlet pipes 52 are connected to the processing gas supply source 64 via a hermetically connected gas supply pipe 61.

[0049] An on / off valve 62 and a flow controller 63, similar to a mass flow controller, are installed midway through the gas supply pipe 61. The gas supply pipe 61, the on / off valve 62, the flow controller 63, and the processed gas supply source 64 form the processed gas supply unit 60. Furthermore, the gas supply pipe 61 branches midway, and each branch pipe is connected to an on / off valve, a flow controller, and a processed gas supply source (not shown) corresponding to the type of processed gas.

[0050] In plasma processing, the processing gas supplied from the processing gas supply unit 60 is supplied to the gas diffusion grooves 33 of the conductor plates 32 of each segmented metal window 31 via the gas supply pipe 61 and the gas inlet pipe 52. Then, the gas is released from each gas diffusion groove 33 into the processing chamber S via the gas release holes 35 of each spray plate 34.

[0051] Alternatively, the gas inlet pipes 52 of each segmented metal window 31 may not converge at one point, but rather each may be individually connected to the processing gas supply unit 60, with processing gas supply control performed for each segmented metal window 31. Alternatively, the gas inlet pipes 52 of multiple segmented metal windows 31 located on the outer side of the metal window 30 may converge at one point, while the gas inlet pipes 52 of multiple segmented metal windows 31 located on the inner side of the metal window 30 may converge at another point, with each gas inlet pipe 52 connected to the processing gas supply unit 60 for processing gas supply control. That is, the former method performs processing gas supply control for each segmented metal window 31, while the latter method performs processing gas supply control separately for the outer and inner regions of the metal window 30. Furthermore, each segmented metal window 31 may have its own high-frequency antenna, and control may be performed to apply high-frequency electrical power to each high-frequency antenna separately.

[0052] The control unit 90 controls the operation of various components of the plasma processing apparatus 100, such as the cooling device 86, high-frequency power supplies 56 and 83, the processing gas supply unit 60, and the gas exhaust unit 28 based on monitoring information sent from a pressure gauge. The control unit 90 includes a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU can execute a predetermined process according to a scheme (processing scheme) stored in the RAM or ROM. The scheme contains control information for the plasma processing apparatus 100 regarding processing conditions. This control information includes, for example, gas flow rate, pressure within the processing container 20, temperature within the processing container 20, temperature of the substrate 71, and processing time.

[0053] The program used by the control unit 90 can also be stored in, for example, a hard disk, optical disk, or optical disc. Alternatively, the program can be set in the control unit 90 and read from a removable computer-readable storage medium such as a CD-ROM, DVD, or memory card. In addition, the control unit 90 includes an input device such as a keyboard and mouse for command input, a display device such as a monitor for visually displaying the operating status of the plasma processing apparatus 100, and an output device such as a printer—all serving as a user interface.

[0054] Next, refer to Figure 2 The structure of the area in which the protective face material 40 is installed, from the side wall 15 of the lower chamber 17 constituting the processing container 20 to the first inner side surface 18 of the bottom plate 16, will be described.

[0055] A first insulating film 43 is formed on the first inner surfaces 18a and 18b of the sidewall 15 and the base plate 16, which are made of aluminum or aluminum alloy, in order to prevent corrosion and consumption of the first inner surfaces 18a and 18b caused by chlorine gases or the like.

[0056] As the first insulating film 43, any one of the following can be used: acid-resistant aluminum film, yttrium sputtered film, fluorinated yttrium sputtered film, ceramic sputtered film including alumina sputtered film, sprayed resin film, and Teflon (registered trademark) sheet and other shaped resin film. Among these, from the viewpoints of workability and cost, acid-resistant aluminum film is preferred as the first insulating film 43.

[0057] In the lower chamber 17 of the example figure, a protective face material 40 is installed on the surface 43a of the first insulating film 43.

[0058] The protective faceplate 40, like the sidewall 15 and the base plate 16, is made of aluminum or an aluminum alloy. The front side 40a (the surface facing the processing chamber S) of the protective faceplate 40 exposed to the plasma becomes a clean surface with exposed aluminum or the like. On the other hand, a second insulating film 41 is formed on the back side 40b of the protective faceplate 40, which is opposite to the first insulating film 43.

[0059] The second insulating film 41 is formed of acid-resistant aluminum or the same as the first insulating film 43, and the surface 41a of the second insulating film 41 is in contact with the surface 43a of the first insulating film 43.

[0060] In the example shown, the second insulating film 41A disposed on the back surface 40b of the protective surface material 40A is in surface contact with the first insulating film 43A disposed on the first inner surface 18a of the side wall 15. Additionally, the second insulating film 41B disposed on the back surface 40b of the protective surface material 40B is in surface contact with the first insulating film 43B disposed on the first inner surface 18b of the base plate 16.

[0061] Furthermore, protective face materials 40A and 40B are installed adjacent to each other, and second insulating films 42A and 42B are formed on the opposing end faces 40c of the protective face materials 40A and 40B, respectively. Moreover, the surfaces 42a of the second insulating films 42A and 42B are in surface contact with each other.

[0062] A through hole 40d is provided in the protective surface material 40A. A threaded groove 18c is provided at the position corresponding to the through hole 40d when the protective surface material 40A is installed in the side wall 15. By inserting the metal connecting part 45 through the through hole 40d and threading the front end of the connecting part 45 into the threaded groove 18c, the protective surface material 40A can be fixed on the first inner surface 18a of the side wall 15.

[0063] On the other hand, a through hole 40d is also provided on the protective face material 40B. When installing the protective face material 40B in the base plate 16, a threaded groove 18d is provided at the position corresponding to the through hole 40d. By inserting the metal connecting member 45 through the through hole 40d and threading the front end of the connecting member 45 into the threaded groove 18d, the protective face material 40B can be fixed on the first inner surface 18b of the base plate 16.

[0064] As a metal connecting component 45, screws or the like can be used in addition to the headed bolt shown in the figure. The sidewall 15 and the base plate 16 are grounded via grounding wire 21, therefore, the first inner surfaces 18a and 18b have a grounding potential. Thus, by fixing the protective face materials 40A and 40B to the first inner surfaces 18a and 18b with the grounding potential via the metal connecting component 45, the protective face materials 40A and 40B also have a grounding potential. Therefore, when a bias high-frequency voltage is applied to the mounting stage 70 by the bias high-frequency power supply 83, the protective face materials 40A and 40B can form part of the counter electrode relative to the mounting stage 70.

[0065] By forming a first insulating film 43 on the first inner surface 18 of the lower chamber 17, as described above, a protective structure capable of preventing corrosion and consumption of the first inner surface 18 caused by chlorine gases or the like can be formed. In the lower chamber 17 of the example figure, a protective face material 40 is mounted on the surface of the first insulating film 43, thus forming a protective structure capable of preventing consumption of the first insulating film 43 caused by fluorine gases.

[0066] That is, the first inner surface 18 of the lower chamber 17 in the example has a protective structure that is resistant to fluorine gases. In the future, if it is switched (reused) to a processing container that is resistant to chlorine gases, it is only necessary to install a protective surface 40 covered by a second insulating film on the front side 40a of the protective surface 40.

[0067] However, when installed with the metal surface of the protective face material 40 abutting against the first insulating film 43, the flat metal surface of the protective face material 40 will abut against the surface 43a of the first insulating film 43. Therefore, insulation and conductivity become uncertain at each location, potentially leading to an electrically unstable state. More specifically, micro-holes in the surface 43a of the first insulating film 43, and areas where part of the surface 43a has peeled off due to thermal sliding friction, may create current paths between the sidewall 15 or base plate 16 and the protective face material 40. Moreover, since the formed current paths are discontinuous, insulation and conductivity may become uncertain. This is also true at the interfaces of the end faces of adjacent protective face materials 40.

[0068] However, in the lower chamber 17 shown in the figure, the surface 41a of the second insulating film 41 formed on the back surface 40b of the protective surface material 40 is in surface contact with the surface 43a of the first insulating film 43 formed on the first inner surface 18. Furthermore, second insulating films 42A and 42B are also formed on the end faces 40c of adjacent protective surface materials 40A and 40B, respectively, with the surfaces 42a of the second insulating films 42A and 42B in surface contact with each other. Therefore, stable insulation can be achieved at the interfaces of surfaces 41a and 43a and at the interfaces of surfaces 42a with each other, preventing the problem of uncertain insulation and conduction at each point of the interface. Thus, a lower chamber 17 with both electrical and discharge stability can be formed.

[0069] In addition, by installing a protective face material 40 on the first inner side 18 of the lower chamber 17, the surface of the protective face material 40 facing the processing chamber S becomes a clean surface with exposed metal, and there will be no problem of particle generation due to the consumption of the first insulating film 43 by fluorine gas, or discharge instability caused by the local exposure of the clean surface due to consumption.

[0070] Thus, by using the processing container 20 shown in the figure and the plasma processing apparatus 100 including the processing container 20, it is possible to suppress or inhibit the generation of particles caused by fluorine gases, and to obtain high electrical stability and discharge stability.

[0071] Next, an example of a method for manufacturing the processing container 20 according to the embodiment will be briefly described.

[0072] The manufacturing method includes the step of forming a first insulating film 43 on at least a portion of a first inner surface 18 exposed to plasma in a processing container 20.

[0073] In addition, the above manufacturing method includes the step of forming a second insulating film 41 on the back side 40b opposite to the first insulating film 43 in the protective face material 40 that at least protects the first inner side 18 from the influence of plasma.

[0074] Furthermore, the above manufacturing method includes the step of installing a protective face material 40 on the first inner side surface 18 in such a way that the first insulating film 43 is in contact with the second insulating film 41.

[0075] In the step of forming the second insulating film 41, a second insulating film 42 is also formed on the end face 40c of the protective face material 40 opposite to the adjacent protective face material 40. Moreover, in the step of installing the protective face material 40, the second insulating films 42 of the adjacent protective face materials 40 are brought into surface contact with each other.

[0076] The manufacturing method of this processing container 20 can suppress or inhibit the generation of particles caused by fluorine gases, and can manufacture a processing container 20 with high electrical stability and discharge stability.

[0077] Other embodiments can also be obtained by combining other constituent elements with the technical solutions listed in the above embodiments, and the present invention is not limited to the technical solutions shown herein. In this regard, modifications can be made without departing from the spirit of the present invention, and can be appropriately determined according to its application.

[0078] For example, the plasma processing apparatus 100 in the figure is described using an inductively coupled plasma processing apparatus with a metal window as an example. However, it could also be an inductively coupled plasma processing apparatus with a dielectric window instead of a metal window, or other types of plasma processing apparatus. Specifically, examples include electron cyclotron resonance plasma (ECP), helicon wave plasma (HWP), and capacitively coupled plasma (CCP). Additionally, microwave-excited surface wave plasma (SWP) can also be used. These plasma processing apparatuses, including ICP, can independently control ion flux and ion energy, freely control etching shape and selectivity, and achieve ion fluxes up to 10. 11 ~10 13 cm -3 The electron density is around 100%.

Claims

1. A processing container for constituting a plasma processing apparatus, capable of housing a substrate internally and performing plasma processing on the substrate, characterized in that: A first insulating film is formed on at least a portion of the first inner surface of the sidewalls and bottom plate of the processing container that are exposed to plasma. A second insulating film is formed on the back side opposite to the first insulating film in the protective material disposed in the sidewalls and the base plate, which at least protects the first inner surface from the influence of plasma. The first insulating film is in contact with the surface of the second insulating film. Both the processing container and the protective surface material are formed of a metal containing aluminum or an aluminum alloy. The second inner surface of the protective material exposed to the plasma is the surface where the metal is exposed.

2. The processing container as described in claim 1, characterized in that: On the first inner surface, a plurality of the aforementioned protective materials are installed adjacent to each other. A second insulating film is also formed on the end face of one of the protective face materials opposite to the adjacent other protective face material. The two insulating films are in face-to-face contact with each other.

3. The processing container as described in claim 1 or 2, characterized in that: The first inner surface has a ground potential. The processing container and the protective material are connected to each other via a metal connecting member, thereby giving the protective material a ground potential.

4. The processing container as described in claim 1 or 2, characterized in that: The first insulating film and the second insulating film are any one of acid-resistant aluminum film, yttrium sputtered film, fluorinated yttrium sputtered film, ceramic sputtered film including alumina sputtered film, sprayed resin film and shaping resin film.

5. A plasma processing device, characterized in that: The processing container has any one of claims 1 to 4.

6. A method for manufacturing a processing container, the processing container being used to construct a plasma processing apparatus, capable of housing a substrate internally and performing plasma processing on the substrate, the method for manufacturing the processing container being characterized by comprising: The step of forming a first insulating film on at least a portion of the first inner surface of the sidewalls and bottom plate exposed to plasma in the processing container; The step of forming a second insulating film on the back side opposite to the first insulating film in the protective material provided in the sidewall and the base plate, which at least protects the first inner surface from the influence of plasma; and The step of installing the protective face material on the first inner surface in a manner that brings the first insulating film into contact with the second insulating film surface. Both the processing container and the protective surface material are formed of a metal containing aluminum or an aluminum alloy. The second inner surface of the protective material exposed to the plasma is the surface where the metal is exposed.

7. The method for manufacturing the processing container as described in claim 6, characterized in that: In the step of forming the second insulating film, the second insulating film is also formed on the end face of the protective material opposite to the adjacent other protective material. In the step of installing the protective face material, the second insulating films of adjacent protective face materials are brought into face-to-face contact with each other.

8. The method for manufacturing the processing container as described in claim 6 or 7, characterized in that: It also includes the step of grounding the first inner surface. In the step of installing the protective material, the processing container and the protective material are connected to each other via a metal connecting member, thereby grounding the protective material.

9. The method for manufacturing the processing container as described in claim 6 or 7, characterized in that: The first insulating film and the second insulating film are any one of acid-resistant aluminum film, yttrium sputtered film, fluorinated yttrium sputtered film, ceramic sputtered film including alumina sputtered film, sprayed resin film and shaping resin film.

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