A crosstalk suppression circuit, method and device for a field effect transistor

Abstract

Embodiments of the present application provide a field effect tube crosstalk suppression circuit, method and device, the crosstalk suppression circuit comprises a power module, a voltage stabilizing module and a driving module;Wherein, the power module is used for receiving input voltage and performing voltage conversion processing on the input voltage to obtain output voltage;The voltage stabilizing module is used for voltage stabilizing processing on the output voltage to obtain stable positive driving voltage and adjustable negative driving voltage;The driving module is used for driving processing on the first control signal according to the positive driving voltage and the negative driving voltage to generate the target driving signal;Wherein, the target driving signal is used for controlling the turn-on and turn-off of the field effect tube. In this way, based on the voltage stabilizing module, the negative driving voltage of the field effect tube can be adjusted while the positive driving voltage remains unchanged, so that the crosstalk phenomenon generated between the field effect tubes can be suppressed, and the risk of field effect tube mis-turn-on or device damage is reduced.

Description

Technical Field

[0001] This application relates to the field of electronic circuit technology, and in particular to a crosstalk suppression circuit, method and device for a field-effect transistor. Background Technology

[0002] Silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) (hereinafter referred to as field-effect transistors) have high switching speed, high operating frequency, low on-resistance and smaller size, making them ideal switches for high-frequency, high-power-density and high-efficiency power electronic converters, and they are increasingly being used in mid-to-high-end converters.

[0003] In related technologies, silicon carbide MOSFETs exhibit more severe crosstalk compared to traditional insulated gate bipolar transistors (IGBTs) or silicon-based devices. When the state of the field-effect transistor changes (e.g., from off to on or from on to off), crosstalk may occur in the field-effect transistors connected to it, which may lead to the risk of the field-effect transistor being turned on incorrectly or the device being damaged. Summary of the Invention

[0004] This application provides a crosstalk suppression circuit, method, and device for field-effect transistors (FETs), which can suppress crosstalk between FETs and reduce the risk of FETs being turned on accidentally or devices being damaged.

[0005] The technical solution of this application embodiment is implemented as follows:

[0006] In a first aspect, embodiments of this application provide a crosstalk suppression circuit for a field-effect transistor (FET), the crosstalk suppression circuit comprising a power supply module, a voltage regulator module, and a driver module; wherein...

[0007] The power module is used to receive the input voltage and perform voltage conversion processing on the input voltage to obtain the output voltage;

[0008] The voltage regulator module is used to regulate the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage.

[0009] The driving module is used to drive the first control signal according to the positive driving voltage and the negative driving voltage to generate a target driving signal; wherein the target driving signal is used to control the on and off of the field-effect transistor.

[0010] In some embodiments, the crosstalk suppression circuit further includes an input adjustment module connected to the power supply module; wherein...

[0011] The input adjustment circuit is used to receive a second control signal and sample the input voltage according to the second control signal to obtain a sampled voltage.

[0012] The power supply module is used to perform voltage conversion processing on the sampled voltage to obtain the output voltage; wherein the output voltage can be adjusted according to the second control signal to realize the adjustability of the negative drive voltage.

[0013] In some embodiments, the input adjustment module includes an auxiliary switch, a first resistor, a first sampling resistor, and a second sampling resistor; wherein,

[0014] The gate of the auxiliary switch is connected to the second control signal, the drain of the auxiliary switch is connected to one end of the second sampling resistor, the source of the auxiliary switch and one end of the first sampling resistor are both connected to the ground terminal, one end of the first resistor is connected to the input voltage, and the other ends of the first resistor, the other ends of the first sampling resistor, and the other ends of the second sampling resistor are all connected to the reference voltage.

[0015] In some embodiments, the crosstalk suppression circuit further includes an output adjustment module, which is connected to the negative output terminal of the voltage regulator module; wherein,

[0016] The voltage regulator module is used to regulate the output voltage to obtain a stable positive drive voltage and an initial negative drive voltage.

[0017] The output adjustment module is used to receive a second control signal and adjust the initial negative drive voltage according to the second control signal to obtain an adjustable negative drive voltage.

[0018] In some embodiments, the crosstalk suppression circuit further includes an isolation module; wherein the isolation module is located between the second control signal and the output adjustment module to ensure that the second control signal and the signal of the output adjustment module are not grounded.

[0019] In some embodiments, the crosstalk suppression circuit further includes a first capacitor and a second capacitor; wherein,

[0020] One end of the first capacitor and one end of the voltage regulator module are both connected to the positive terminal of the output voltage, and the other end of the first capacitor and the other end of the voltage regulator module are both connected to the ground terminal to obtain the stable positive drive voltage;

[0021] One end of the second capacitor is connected to the negative terminal of the output voltage, and the other end of the second capacitor is connected to the ground terminal to obtain the adjustable negative drive voltage.

[0022] In some embodiments, the field-effect transistor may be a silicon carbide MOSFET.

[0023] Secondly, embodiments of this application provide a bridge arm driving circuit, the bridge arm driving circuit including a bridge arm module and at least one crosstalk suppression circuit as described in any of the first aspects.

[0024] In some embodiments, the bridge arm module includes a first field-effect transistor and a second field-effect transistor, and the number of crosstalk suppression circuits is two; wherein...

[0025] The first crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable first positive drive voltage and an adjustable first negative drive voltage, and to drive a first control signal according to the first positive drive voltage and the first negative drive voltage to generate a first target drive signal; wherein, the first target drive signal is used to control the conduction and cutoff of the first field-effect transistor;

[0026] The second crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable second positive drive voltage and an adjustable second negative drive voltage, and to drive the second control signal according to the second positive drive voltage and the second negative drive voltage to generate a second target drive signal; wherein, the second target drive signal is used to control the conduction and cutoff of the second field-effect transistor.

[0027] In some embodiments, the first negative drive voltage is voltage-adjustable according to the second control signal;

[0028] The second negative drive voltage is adjustable according to the first control signal.

[0029] Thirdly, embodiments of this application provide a method for suppressing crosstalk in a field-effect transistor, the method comprising:

[0030] The input voltage is converted by the power supply module to obtain the output voltage;

[0031] The output voltage is regulated by a voltage regulator module to obtain a stable positive drive voltage and an adjustable negative drive voltage.

[0032] Based on the positive drive voltage and the negative drive voltage, the first control signal is processed by the drive module to generate a target drive signal; wherein, the target drive signal is used to control the on and off of the field-effect transistor.

[0033] In some embodiments, when the method is applied to a bridge arm drive circuit including a first field-effect transistor and a second field-effect transistor, the method further includes:

[0034] The output voltage is regulated by the first voltage regulator module to obtain a stable first positive drive voltage and an adjustable first negative drive voltage. The first negative drive voltage is adjustable according to the second control signal.

[0035] Based on the first positive drive voltage and the first negative drive voltage, the first drive module processes the first control signal to generate a first target drive signal; wherein, the first target drive signal is used to control the on and off states of the first field-effect transistor; and

[0036] The output voltage is regulated by the second voltage regulator module to obtain a stable second positive drive voltage and an adjustable second negative drive voltage. The second negative drive voltage is adjustable according to the first control signal.

[0037] Based on the second positive drive voltage and the second negative drive voltage, the second drive module drives the second control signal to generate a second target drive signal; wherein, the second target drive signal is used to control the turn-on and turn-off of the second field-effect transistor.

[0038] Fourthly, embodiments of this application provide an electronic device, which includes at least the bridge arm drive circuit as described in any one of the second aspects.

[0039] This application provides a crosstalk suppression circuit, method, and apparatus for field-effect transistors (FETs). The crosstalk suppression circuit includes a power supply module, a voltage regulator module, and a drive module. The power supply module receives an input voltage and performs voltage conversion processing to obtain an output voltage. The voltage regulator module regulates the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage. The drive module drives a first control signal based on the positive and negative drive voltages to generate a target drive signal. The target drive signal controls the on / off state of the FET. This allows for adjustment of the negative drive voltage of the FET while maintaining a constant positive drive voltage, based on the voltage regulator module. This not only suppresses crosstalk between FETs, reducing the risk of FET mis-turn-on or device damage, but also simplifies the crosstalk suppression circuit and reduces costs. Attached Figure Description

[0040] Figure 1 A schematic diagram of a field-effect transistor bridge connection structure provided for related technologies;

[0041] Figure 2 A waveform diagram illustrating the turn-on process of a bridge-connected circuit using a field-effect transistor bridge connection structure, provided for related technologies.

[0042] Figure 3 A waveform diagram illustrating the turn-off process of a bridge-connected circuit using a field-effect transistor bridge connection structure, provided for related technologies.

[0043] Figure 4 A schematic diagram of the structure of a field-effect transistor crosstalk suppression circuit is provided for related technologies;

[0044] Figure 5 A schematic diagram of the gate voltage waveform of a field-effect transistor crosstalk suppression circuit provided for related technologies;

[0045] Figure 6 A schematic diagram of another field-effect transistor crosstalk suppression circuit structure provided for related technologies;

[0046] Figure 7 A waveform diagram of voltage at different locations in another field-effect transistor crosstalk suppression circuit provided for related technologies;

[0047] Figure 8 A schematic diagram of the crosstalk suppression circuit for a field-effect transistor provided in an embodiment of this application;

[0048] Figure 9 A schematic diagram of the composition structure of another field-effect transistor crosstalk suppression circuit provided in an embodiment of this application;

[0049] Figure 10 A schematic diagram of the composition structure of another field-effect transistor crosstalk suppression circuit provided in the embodiments of this application;

[0050] Figure 11 A schematic diagram of the composition structure of a bridge arm drive circuit provided in an embodiment of this application;

[0051] Figure 12 A schematic flowchart illustrating a crosstalk suppression method for a field-effect transistor provided in this application embodiment;

[0052] Figure 13 A schematic diagram of a bridge arm drive circuit provided in an embodiment of this application;

[0053] Figure 14 A schematic diagram of another bridge arm drive circuit provided in this application embodiment;

[0054] Figure 15 This application provides a schematic diagram of voltage variation curves at different positions in a bridge arm drive circuit, as shown in the embodiments of the present application.

[0055] Figure 16 A schematic diagram of the specific structure of another bridge arm drive circuit provided in an embodiment of this application;

[0056] Figure 17 A schematic diagram of drain-source voltage and gate-source voltage variation curves without driver voltage regulation, provided for related technologies;

[0057] Figure 18 This application provides a schematic diagram of drain-source voltage and gate-source voltage variation curves with driving voltage regulation, as shown in the embodiments of this application.

[0058] Figure 19 This is a schematic diagram of the composition structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0059] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It is understood that the specific embodiments described herein are merely for explaining the relevant application and not for limiting the application. Furthermore, it should be noted that, for ease of description, only the parts relevant to the application are shown in the accompanying drawings.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0061] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0062] It should be noted that the terms "first, second, and third" used in the embodiments of this application are merely to distinguish similar objects and do not represent a specific ordering of objects. It is understood that "first, second, and third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein.

[0063] It's understandable that silicon carbide MOSFETs are increasingly used in power electronic circuits due to their fast switching speed and low losses. However, compared to traditional IGBTs or silicon-based MOSFETs, crosstalk becomes more pronounced in silicon carbide MOSFETs. This is especially true for bridge-connected silicon carbide MOSFETs, where the rapid turn-on speed results in a large drain-source voltage change rate (dv / dt), making crosstalk more difficult to address than in traditional silicon-based devices.

[0064] See Figure 1 It shows a schematic diagram of a circuit structure of a field-effect transistor bridge connection, such as Figure 1 As shown, a basic circuit is illustrated where the upper and lower transistors are connected via a bridge structure. Q1 is the upper transistor, Q2 is the lower transistor, Cgd1, Cgs1, and Cds1 are the parasitic capacitances of Q1, and Cgd2, Cgs2, and Cds2 are the parasitic capacitances of Q2.

[0065] See Figure 2 , Figure 3 It shows that Figure 1 Based on this, a waveform diagram of the turn-on and turn-off process of the field-effect transistors in a bridge-connected circuit is shown. Where Vgs1 is the gate-source drive voltage of the upper transistor, Vds1 is the drain-source voltage of the upper transistor, Vgs2 is the gate-source drive voltage of the lower transistor, and Vds2 is the drain-source voltage of the lower transistor.

[0066] Specifically, see Figure 2 It shows a waveform diagram of a field-effect transistor bridge connection structure provided by related technologies during the turn-on process of a bridge connection circuit, and see also... Figure 3 It shows a waveform diagram of a field-effect transistor bridge connection structure provided by related technology during the turn-off process of the bridge connection circuit, combined with... Figure 2 and Figure 3Comparing the waveforms, when the lower MOSFET is in the off state, if the bridge arm current flows outward, i.e., the current flows through the body diode of the lower MOSFET, then Vds ≈ 0 for the lower MOSFET and Vds ≈ Vdc for the upper MOSFET. If the upper MOSFET switches from the off state to the on state, the current will commutate from the lower MOSFET to the upper MOSFET, causing the lower MOSFET's Vds voltage to rise rapidly to Vdc, while the upper MOSFET's Vds voltage drops to 0. Because the turn-on speed of the silicon carbide MOSFET is very fast, the voltage rise rate dv / dt is very large. This dv / dt will generate a current from d (drain) to g (gate) in the parasitic capacitance Cgd of the lower MOSFET. This current will charge Cgd and raise its voltage. The current path is either through the parasitic capacitance Cgs or through the drive circuit. This portion of the current passing through Cgs will charge Cgs and cause the Vgs voltage to rise. Therefore, even when the lower transistor is off, Vgs will still experience a voltage rise. If this rise exceeds the threshold voltage Vth, it will cause the lower transistor to turn on falsely, leading to bridge arm burn-in. When the lower transistor is off and the upper transistor is on, Vds ≈ Vdc for the lower transistor and Vds ≈ 0 for the upper transistor. If the bridge arm current is flowing outwards at this time, when the upper transistor turns off, Vds for the upper transistor will rapidly change from 0 to Vdc, and Vds for the lower transistor will rapidly change from Vdc to 0. This voltage change will also generate a high dv / dt, creating a discharge current through the lower transistor's Cgd. This current flowing through the lower transistor's Cgs will cause Vgs to drop. If the drop is too large, Vgs will fall below the device's minimum allowable voltage, causing device damage.

[0067] In related technologies, technical solutions to the crosstalk problem between field-effect transistors include:

[0068] For example, see Figure 4 It shows a schematic diagram of the structure of a field-effect transistor crosstalk suppression circuit provided by related technologies, and see also Figure 5 The diagram illustrates a gate voltage waveform of a field-effect transistor (FET) crosstalk suppression circuit provided by related technologies. Through the voltage divider between C1H and C2H, the gate voltage of the MOSFET is negative when it is turned off. The delay effect of R3H and C3H ensures that S3H is not yet turned on when the lower MOSFET is turned on, preventing excessive gate voltage caused by charging CgsH. When the lower MOSFET is turned off, C3H has already been fully charged, and S3H is turned on, at which point the gate turn-off voltage is 0. Crosstalk caused by the turn-off of the lower MOSFET will not cause an excessive drop in gate voltage, thus preventing device damage.

[0069] For example, see Figure 6 It shows a schematic diagram of another field-effect transistor crosstalk suppression circuit structure provided by related technologies, and see also Figure 7This diagram illustrates the waveforms of voltages at different locations in another field-effect transistor (FET) crosstalk suppression circuit provided by related technologies. Each MOSFET is driven by a power supply composed of two half-bridge drive circuits. The four switches in these two half-bridge drive circuits use four different drive signals, thus ensuring that the final drive voltage applied to the MOSFET is a three-level voltage. This ensures that the device's turn-off voltage -USS_H is low when the transistor is turned on and zero when it is turned off. This suppresses gate voltage overshoot and drop caused by crosstalk.

[0070] Based on the above solutions, on the one hand, regarding Figure 4 The technical solution shown, with its added capacitor in the drive circuit, leads to longer turn-on and turn-off times, affecting switching speed and increasing switching losses. Furthermore, this solution is only suitable for situations where the upper and lower transistors of the bridge arm have complementary 50% duty cycles. When the duty cycle is less than 50% and varies, the parameters of the RC delay circuit are difficult to select, making it impossible to ensure that the MOSFET's turn-off voltage remains low when the transistor is turned on. On the other hand, regarding... Figure 6 The technical solution shown requires two additional auxiliary switching transistors and two auxiliary switching signals for each MOSFET to generate a three-level drive waveform, making this solution complex and costly to implement.

[0071] Based on this, this application provides a crosstalk suppression circuit for field-effect transistors (FETs). The crosstalk suppression circuit includes a power supply module, a voltage regulator module, and a drive module. The power supply module receives the input voltage and performs voltage conversion processing to obtain an output voltage. The voltage regulator module regulates the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage. The drive module drives a first control signal based on the positive and negative drive voltages to generate a target drive signal. The target drive signal is used to control the on / off state of the FET. In this way, based on the voltage regulator module, the negative drive voltage of the FET can be adjusted while the positive drive voltage remains constant. This not only suppresses crosstalk between FETs, reducing the risk of FETs being accidentally turned on or damaged, but also simplifies the crosstalk suppression circuit and reduces costs.

[0072] The embodiments of this application will be further described in detail below with reference to the accompanying drawings and specific examples.

[0073] In one embodiment of this application, see Figure 8 This illustration shows a schematic diagram of the crosstalk suppression circuit for a field-effect transistor provided in an embodiment of this application. Figure 8As shown, the crosstalk suppression circuit 80 may include a power supply module 801, a voltage regulator module 802, and a driver module 803, wherein,

[0074] The power module 801 is used to receive the input voltage and perform voltage conversion processing on the input voltage to obtain the output voltage;

[0075] The voltage regulator module 802 is used to regulate the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage.

[0076] The drive module 803 is used to drive the first control signal according to the positive drive voltage and the negative drive voltage to generate a target drive signal; wherein the target drive signal is used to control the conduction and cutoff of the field-effect transistor.

[0077] It should be noted that the crosstalk suppression circuit provided in this application embodiment can be applied to bridge arm drive circuits, as well as to electronic devices that integrate this circuit or have crosstalk suppression requirements. Here, the electronic device can integrate MOSFET / JFET / IGBT or other controllable switching transistors, and is not specifically limited here.

[0078] It should also be noted that the crosstalk suppression circuit 40 for a field-effect transistor provided in this application embodiment can be part of a bridge arm drive circuit. The crosstalk suppression circuit 80 is used to adjust the drive signal in the bridge arm drive circuit; wherein, the crosstalk suppression circuit 80 can be connected to the gate terminal of the field-effect transistor, and by keeping the positive drive voltage stable and the negative drive voltage adjustable, the drive signal at the gate terminal of the field-effect transistor can be adjusted, thereby improving the crosstalk problem of the field-effect transistor in the bridge arm drive circuit.

[0079] In some embodiments, the power module 801 may include a DC-DC conversion circuit connected to the voltage regulator module 802; wherein the DC-DC conversion circuit is used to convert an unstable DC input voltage into a stable DC output voltage, thereby stabilizing the voltage across the voltage regulator module 802.

[0080] In some embodiments, the power module 801 may further include an AC-to-DC circuit, which is connected to a DC-DC conversion circuit; wherein...

[0081] An AC-to-DC circuit is used to convert AC input voltage into DC input voltage.

[0082] A DC-DC converter circuit is used to convert the DC input voltage into a stable DC output voltage.

[0083] In some embodiments, the voltage regulator module 802 processes the output voltage. The voltage regulator module 802 may include a voltage regulator circuit. The positive drive voltage is regulated by the voltage regulator circuit so that the positive drive voltage can remain constant and the negative drive voltage can be continuously adjusted to achieve a variable negative drive voltage.

[0084] It should be noted that the DC-DC conversion circuit can be a boost circuit, a buck circuit, a buck-boost circuit, or a DC-DC conversion circuit using a transformer, etc., and the embodiments of this application do not impose any limitations.

[0085] It should also be noted that the voltage regulator circuit can be a switching voltage regulator circuit. Switching voltage regulator circuits offer excellent voltage regulation and eliminate the need for a power frequency transformer and a large heatsink, significantly reducing size and weight. Common methods for implementing switching control include self-excited switching regulators, pulse-width modulation switching regulators, and DC-DC converter switching regulators, etc., which will not be specifically limited here.

[0086] In some embodiments, the driving module 803 is connected to the gate terminal of the field-effect transistor and drives the first control signal according to the positive driving voltage and the negative driving voltage to generate a target driving signal; wherein, the target driving signal is used to control the conduction and turn-off of the field-effect transistor.

[0087] It should be noted that when the crosstalk suppression circuit includes two mutually bridged field-effect transistors (FETs), the crosstalk suppression circuits for the first and second FETs are symmetrically arranged. A first control signal is connected to the driver module of the first FET and the power supply module of the second FET, controlling both the on / off state of the first FET and the crosstalk suppression circuit of the second FET. A second control signal is connected to the driver module of the second FET and the power supply module of the first FET, controlling both the on / off state of the second FET and the crosstalk suppression circuit of the first FET. The driver module 803 transmits the control command from the first control signal to the first FET via the target drive signal.

[0088] It should also be noted that when the surrounding MOSFETs undergo a state change from on to off, the power supply module 801 processes the input voltage. That is, when one of the MOSFETs in the bridged circuit receives a control signal indicating a change in its control state, the crosstalk suppression circuit of the other MOSFET will activate and output a converted output voltage through the power supply module 801. The voltage regulator module 802 processes the output voltage. The positive drive voltage is regulated by the voltage regulator module 402 to keep the positive drive voltage constant, while the negative drive voltage is adjustable. Then, the drive module 803 processes the first control signal based on the positive and negative drive voltages to generate the target drive signal. In this way, through the cooperation of the power supply module 801, the voltage regulator module 802, and the drive module 803, crosstalk suppression of the MOSFETs is finally achieved.

[0089] In some embodiments, see Figure 9 This illustrates a schematic diagram of the composition structure of another field-effect transistor crosstalk suppression circuit provided in an embodiment of this application. For example... Figure 9 As shown, the crosstalk suppression circuit 80 may further include an input adjustment module 804, which is connected to the power supply module 801; wherein,

[0090] The input adjustment module 804 is used to receive a second control signal and perform voltage sampling on the input voltage according to the second control signal to obtain a sampled voltage.

[0091] The power module 801 is used to perform voltage conversion processing on the sampled voltage to obtain the output voltage; wherein the output voltage can be adjusted according to the second control signal to realize the adjustability of the negative drive voltage.

[0092] It should be noted that the second control signal simultaneously controls the first and second MOSFETs that are bridged together. Specifically, on the one hand, it controls the switching between the on and off states of the second MOSFET by controlling the corresponding drive module; on the other hand, it controls the input voltage level by sampling the input voltage. Furthermore, while keeping the positive drive voltage constant, it adjusts the negative drive voltage to suppress the influence of crosstalk on the first MOSFET.

[0093] It should also be noted that the voltage conversion process can use a DC-DC converter or other circuits that can convert DC voltage to DC voltage, without any limitation.

[0094] In some embodiments, the input adjustment module includes an auxiliary switch, a first resistor, a first sampling resistor, and a second sampling resistor; wherein,

[0095] The gate of the auxiliary switch is connected to the second control signal, the drain of the auxiliary switch is connected to one end of the second sampling resistor, the source of the auxiliary switch and one end of the first sampling resistor are both connected to the ground terminal, one end of the first resistor is connected to the input voltage, and the other ends of the first resistor, the other ends of the first sampling resistor, and the other ends of the second sampling resistor are all connected to the reference voltage.

[0096] It should be noted that the feedback resistor of the input regulation module is determined by the first sampling resistor, the second sampling resistor, and the first resistor. Furthermore, the magnitude of the feedback resistor also indirectly determines the magnitude of the output voltage. When the feedback resistor increases, the output voltage decreases. Since the positive drive voltage remains constant, the amplitude of the negative drive voltage decreases. In other words, the range of variation of the negative drive voltage can be freely adjusted by adjusting the resistance values ​​or connection method of the first sampling resistor, the second sampling resistor, and the first resistor.

[0097] Specifically, in some embodiments, the input adjustment module is used to control the auxiliary switch to turn off when the second control signal changes from a first level state to a second level state, so as to reduce the output voltage of the power module and decrease the amplitude of the negative drive voltage; or, the input adjustment module is used to control the auxiliary switch to turn on when the second control signal changes from a second level state to a first level state, so as to increase the output voltage of the power module and increase the amplitude of the negative drive voltage.

[0098] In some embodiments, see Figure 10 This illustrates a schematic diagram of the composition structure of another field-effect transistor crosstalk suppression circuit provided in an embodiment of this application. For example... Figure 10 As shown, the crosstalk suppression circuit 80 may further include an output adjustment module 805, which is connected to the negative output terminal of the voltage regulator module 802; wherein,

[0099] The voltage regulator module 802 is used to regulate the output voltage to obtain a stable positive drive voltage and an initial negative drive voltage.

[0100] The output adjustment module 805 is used to receive a second control signal and adjust the initial negative drive voltage according to the second control signal to obtain an adjustable negative drive voltage.

[0101] It should be noted that the input regulation module and the output regulation module can be used selectively or simultaneously, as long as they can achieve the purpose of regulating the negative drive voltage. The sum of the voltages of the output regulation module and the voltage regulator module is equal to the output voltage. The output regulation module can be an adjustable output voltage circuit, and the voltage regulator module can be a Zener diode voltage regulator circuit, a series regulating transistor voltage regulator circuit, a switching voltage regulator circuit, or a three-terminal integrated voltage regulator circuit, etc., without specific limitations.

[0102] It should also be noted that Zener diode voltage regulator circuits utilize the voltage regulation characteristics of silicon Zener diodes to achieve regulated DC operating voltage output. Series regulating transistor voltage regulator circuits utilize the characteristic that the impedance between the collector and emitter of a transistor changes with the base current to automatically adjust the DC output voltage, achieving stability. In this type of voltage regulator circuit, the transistor (regulator) is always in the conducting state. Switching voltage regulator circuits are high-performance DC voltage regulator circuits where the transistor (switching transistor) alternates between conducting and cutoff states. Three-terminal integrated voltage regulator circuits are integrated circuit voltage regulator circuits whose function is to stabilize the DC output voltage. This integrated circuit has only three pins.

[0103] In some embodiments, such as Figure 10 As shown, the crosstalk suppression circuit 80 may further include an isolation module 806; wherein the isolation module 806 is located between the second control signal and the output adjustment module 805, so as to ensure that the second control signal and the signal of the output adjustment module 805 are not grounded.

[0104] It should be noted that the isolation circuit ensures that there is no direct electrical connection between the second control signal and the output regulation module circuits; that is, the two circuits are mutually insulated. However, it is also necessary to ensure that the second control signal and the output regulation module maintain signal transmission. Specifically, a dual-winding transformer can be used to connect the primary and secondary sides of the second control signal and the output regulation module respectively, achieving the effect of isolation between the two.

[0105] It should also be noted that the main function of the isolation module is to reduce mutual interference between two different circuits. The isolation principle is based on the law of electromagnetic induction. When the isolation circuit is working, after AC current is applied to the primary winding, an alternating magnetic flux is generated in its iron core. This alternating magnetic flux induces an electromotive force (EMF) in both the primary and secondary windings. After the secondary winding induces an EMF, it can provide AC voltage to the secondary circuit. When the secondary winding is under load and current flows through it, it will affect the magnetic flux of the magnetic circuit, thereby causing a change in the current of the primary winding.

[0106] Furthermore, in some embodiments, such as Figure 9 or Figure 10As shown, the crosstalk suppression circuit 80 may further include a first capacitor C1 and a second capacitor C2; wherein,

[0107] One end of the first capacitor C1 and one end of the voltage regulator module 802 are both connected to the positive terminal of the output voltage, and the other end of the first capacitor C1 and the other end of the voltage regulator module 802 are both connected to the ground terminal to obtain the stable positive drive voltage;

[0108] One end of the second capacitor C2 is connected to the negative terminal of the output voltage, and the other end of the second capacitor C2 is connected to the ground terminal to obtain the adjustable negative drive voltage.

[0109] It should be noted that the first capacitor and the second capacitor are used to separate the positive drive voltage and the negative drive voltage, so that the subsequent voltage regulation circuit can regulate the positive drive voltage to keep it constant, and the adjustable output voltage circuit can adjust the negative drive voltage to keep the negative drive voltage variable.

[0110] It should also be noted that, in the embodiments of this application, the field-effect transistor can be a silicon carbide MOSFET.

[0111] In one specific implementation, see Figure 11 This illustrates a schematic diagram of the structural composition of a bridge arm drive circuit provided in an embodiment of this application. Figure 11 As shown, the bridge arm drive circuit 110 includes a bridge arm module 1101 and at least one crosstalk suppression circuit 80.

[0112] It should be noted that the bridge arm module includes interconnected field-effect transistors (FETs), and each FET corresponds to a crosstalk suppression circuit. For example, if the bridge arm module includes two FETs, then it includes two crosstalk suppression circuits. The two crosstalk suppression circuits are connected to the two FETs respectively to suppress the crosstalk phenomenon of the FETs.

[0113] In some embodiments, the bridge arm module 1101 includes a first field-effect transistor and a second field-effect transistor, and the number of crosstalk suppression circuits is two; wherein,

[0114] The first crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable first positive drive voltage and an adjustable first negative drive voltage, and to drive a first control signal according to the first positive drive voltage and the first negative drive voltage to generate a first target drive signal; wherein, the first target drive signal is used to control the conduction and cutoff of the first field-effect transistor;

[0115] The second crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable second positive drive voltage and an adjustable second negative drive voltage, and to drive the second control signal according to the second positive drive voltage and the second negative drive voltage to generate a second target drive signal; wherein, the second target drive signal is used to control the conduction and cutoff of the second field-effect transistor.

[0116] It should be noted that when the state of the first field-effect transistor changes from on to off or from off to on, a signal is simultaneously sent to the crosstalk suppression circuit corresponding to the second field-effect transistor, causing the crosstalk suppression circuit corresponding to the second field-effect transistor to start working and avoid the crosstalk effect of the state change of the first field-effect transistor on the second field-effect transistor; similarly, when the state of the second field-effect transistor changes from on to off or from off to on, a signal is simultaneously sent to the crosstalk suppression circuit corresponding to the first field-effect transistor, causing the crosstalk suppression circuit corresponding to the first field-effect transistor to start working and avoid the crosstalk effect of the state change of the second field-effect transistor on the first field-effect transistor.

[0117] In some embodiments, the first negative drive voltage is voltage-adjustable according to the second control signal;

[0118] The second negative drive voltage is adjustable according to the first control signal.

[0119] It should be noted that the second control signal is connected to the second drive module corresponding to the second field-effect transistor and the first power supply module corresponding to the first field-effect transistor; similarly, the first control signal is connected to the first drive module corresponding to the first field-effect transistor and the second power supply module corresponding to the second field-effect transistor. Simultaneously with the change in the state of the field-effect transistor, adjacent field-effect transistors receive signals requiring crosstalk suppression, thereby activating the crosstalk suppression circuit and enabling precise reduction or even elimination of crosstalk.

[0120] This application provides a crosstalk suppression circuit for field-effect transistors (FETs). The crosstalk suppression circuit includes a power supply module, a voltage regulator module, and a drive module. The power supply module receives the input voltage and performs voltage conversion processing to obtain an output voltage. The voltage regulator module regulates the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage. The drive module drives a first control signal based on the positive and negative drive voltages to generate a target drive signal. The target drive signal is used to control the on / off state of the FET. This allows for adjustment of the negative drive voltage of the FET while maintaining a constant positive drive voltage, based on the voltage regulator module. This not only suppresses crosstalk between FETs, reducing the risk of FET erroneous turn-on or device damage, but also simplifies the crosstalk suppression circuit and reduces costs.

[0121] In another embodiment of this application, see Figure 12 This illustrates a flowchart of a crosstalk suppression method for a field-effect transistor provided in an embodiment of this application. Figure 12 As shown, the method may include:

[0122] S1201: The power supply module performs voltage conversion on the input voltage to obtain the output voltage;

[0123] S1202: The output voltage is regulated by a voltage regulator module to obtain a stable positive drive voltage and an adjustable negative drive voltage;

[0124] S1203: Based on the positive drive voltage and the negative drive voltage, the first control signal is processed by the drive module to generate a target drive signal; wherein, the target drive signal is used to control the conduction and turn-off of the field-effect transistor.

[0125] It should be noted that the crosstalk suppression method provided in this application embodiment can be applied to bridge arm drive circuits, as well as to electronic devices that integrate this circuit or have crosstalk suppression requirements. Here, the electronic device may integrate MOSFET / JFET / IGBT or other controllable switching transistors, and is not specifically limited here.

[0126] Furthermore, in some embodiments, when the method is applied to a crosstalk suppression circuit including an input adjustment module, for S1201, the step of voltage conversion processing of the input voltage by the power supply module to obtain the output voltage may include:

[0127] The input adjustment module receives a second control signal and samples the input voltage according to the second control signal to obtain a sampled voltage.

[0128] The sampled voltage is converted by the power supply module to obtain the output voltage; wherein the output voltage can be adjusted according to the second control signal to realize the adjustability of the negative drive voltage.

[0129] It should be noted that, in this embodiment, the input adjustment module may include an auxiliary switch, a first resistor, a first sampling resistor, and a second sampling resistor; wherein, the gate of the auxiliary switch is connected to the second control signal, the drain of the auxiliary switch is connected to one end of the second sampling resistor, the source of the auxiliary switch and one end of the first sampling resistor are both connected to ground, one end of the first resistor is connected to the input voltage, and the other ends of the first resistor, the other ends of the first sampling resistor, and the other ends of the second sampling resistor are all connected to a reference voltage.

[0130] In some embodiments, when the method is applied to a crosstalk suppression circuit including an input adjustment module, for S1202, the step of regulating the output voltage through the voltage regulator module to obtain a stable positive drive voltage and an adjustable negative drive voltage may include:

[0131] The output voltage is regulated by a voltage regulator module to obtain a stable positive drive voltage and an initial negative drive voltage;

[0132] The output adjustment module receives a second control signal and adjusts the initial negative drive voltage according to the second control signal to obtain an adjustable negative drive voltage.

[0133] It should be noted that, in this embodiment, the crosstalk suppression circuit may further include an isolation module; wherein, the isolation module is located between the second control signal and the output adjustment module to ensure that the second control signal and the signal of the output adjustment module are not grounded. The crosstalk suppression circuit may further include a first capacitor and a second capacitor; wherein one end of the first capacitor and one end of the voltage regulator module are both connected to the positive terminal of the output voltage, and the other end of the first capacitor and the other end of the voltage regulator module are both connected to the ground terminal to obtain the stable positive drive voltage; one end of the second capacitor is connected to the negative terminal of the output voltage, and the other end of the second capacitor is connected to the ground terminal to obtain the adjustable negative drive voltage.

[0134] It should also be noted that the same crosstalk suppression method can be applied to a single field-effect transistor (FET), or to multiple FETs, or to a group of mutually bridged FETs, or to multiple groups of mutually bridged FETs. This application does not impose any limitations on the embodiments.

[0135] In some embodiments, when the method is applied to a bridge arm drive circuit including a first field-effect transistor and a second field-effect transistor, the method further includes:

[0136] The output voltage is regulated by the first voltage regulator module to obtain a stable first positive drive voltage and an adjustable first negative drive voltage. The first negative drive voltage is adjustable according to the second control signal.

[0137] Based on the first positive drive voltage and the first negative drive voltage, the first drive module processes the first control signal to generate a first target drive signal; wherein, the first target drive signal is used to control the on and off states of the first field-effect transistor; and

[0138] The output voltage is regulated by the second voltage regulator module to obtain a stable second positive drive voltage and an adjustable second negative drive voltage. The second negative drive voltage is adjustable according to the first control signal.

[0139] Based on the second positive drive voltage and the second negative drive voltage, the second drive module drives the second control signal to generate a second target drive signal; wherein, the second target drive signal is used to control the turn-on and turn-off of the second field-effect transistor.

[0140] It should be noted that when the state of the first field-effect transistor changes, i.e., from on to off or from off to on, a crosstalk suppression signal is sent to the second field-effect transistor. The negative drive voltage in the output voltage is adjusted by the second voltage regulation module to suppress the crosstalk caused by the first field-effect transistor. When the state of the second field-effect transistor changes, i.e., from on to off or from off to on, a crosstalk suppression signal is sent to the first field-effect transistor. The negative drive voltage in the output voltage is adjusted by the first voltage regulation module to suppress the crosstalk caused by the second field-effect transistor.

[0141] This application provides a method for suppressing crosstalk in field-effect transistors (FETs). The method includes: converting an input voltage using a power supply module to obtain an output voltage; regulating the output voltage using a voltage regulator module to obtain a stable forward drive voltage and an adjustable negative drive voltage; and generating a target drive signal by driving a first control signal using a drive module based on the forward and negative drive voltages. The target drive signal is used to control the on / off state of the FET. This method allows for adjustment of the negative drive voltage of the FET while maintaining a constant forward drive voltage, based on the voltage regulator module. This not only suppresses crosstalk between FETs and reduces the risk of accidental turn-on or device damage, but also simplifies the circuitry for crosstalk suppression and reduces costs.

[0142] In another embodiment of this application, see [link to application]. Figure 13 This illustrates a schematic diagram of a bridge arm drive circuit provided in an embodiment of this application. Figure 13 As shown, taking two MOSFETs that are bridged together as an example, the bridge arm drive circuit may also include a first drive power supply 1301, a first drive circuit 1302, a second drive power supply 1303, a second drive circuit 1304, and a silicon carbide MOSFET bridge arm 1305; wherein, the silicon carbide MOSFET bridge arm 1305 may include a first MOSFET and a second MOSFET.

[0143] The first driving power supply 1301 is used to provide a driving voltage for the first driving circuit 1302. The driving voltage includes a constant positive driving voltage and an adjustable negative driving voltage.

[0144] The first driving circuit 1302 is used to provide driving force to the first field-effect transistor through the upper transistor driving signal; wherein, the upper transistor driving signal is connected to the gate terminal of the first field-effect transistor;

[0145] The second driving power supply 1303 is used to provide a driving voltage to the second driving circuit 1304. The driving voltage includes a constant positive driving voltage and an adjustable negative driving voltage.

[0146] The second driving circuit 1304 is used to provide driving force to the second field-effect transistor through the lower transistor driving signal; the lower transistor driving signal is connected to the gate terminal of the second field-effect transistor.

[0147] In some embodiments, the bridge arm drive circuit may further include an upper transistor control signal and a lower transistor control signal; wherein,

[0148] The upper MOSFET control signal is connected to the first drive circuit 1302 and the second drive power supply 1303, respectively, and the lower MOSFET signal is connected to the second drive circuit 1304 and the first drive power supply 1301, respectively.

[0149] It should be noted that the driving power supply is the power module in the aforementioned embodiments; the driving circuit is the driving module in the aforementioned embodiments; the driving positive voltage is the positive driving voltage in the aforementioned embodiments; the driving negative voltage is the negative driving voltage in the aforementioned embodiments; and the silicon carbide MOSFET bridge arm is the bridge arm module in the aforementioned embodiments.

[0150] See Figure 14 It shows a schematic diagram of another bridge arm drive circuit provided in an embodiment of this application, such as Figure 14 As shown, in Figure 13 Based on this, both the first driving power supply 1301 and the second driving power supply 1303 can be isolated DC / DC converters. The positive driving voltage is kept constant by the regulation circuit (i.e., the voltage regulation module in the aforementioned embodiment), and the negative driving voltage is regulated by the input voltage regulation module. The input voltage regulation module may include a voltage sampling circuit, which may include an auxiliary switch T1, a first resistor R1, a first sampling resistor Rsense1, and a second sampling resistor Rsense2.

[0151] The gate of the auxiliary switch T1 is connected to the lower control signal Vin1. The drain of the auxiliary switch T1 is connected to one end of the second sampling resistor Rsense2. The source of the auxiliary switch T1 and one end of the first sampling resistor Rsense1 are both connected to the ground terminal. One end of the first resistor R1 is connected to the first driving power supply. The other ends of the first resistor R1, the first sampling resistor Rsense1, and the second sampling resistor Rsense2 are all connected to the reference voltage.

[0152] Specifically, such as Figure 14 As shown, the drive circuit's on-state voltage is +Vcc, and its off-state voltage is -Vee. The drive circuit's power supply includes an isolated DC / DC converter. The DC / DC converter's input voltage is Vin, and its output voltage is Vo. The DC / DC circuit's output voltage regulation is achieved through direct sampling of Vo, or through closed-loop control after sampling from the auxiliary winding. The DC / DC circuit's output terminal clamps the positive output voltage to Vcc through a voltage regulator circuit; therefore, Vcc + Vee = Vo.

[0153] See Figure 15 This illustrates a schematic diagram of voltage variation curves at different locations in a bridge arm drive circuit provided in an embodiment of this application. For example... Figure 15 As shown, taking the lower tube as an example, the working principle of this bridge arm drive circuit is as follows:

[0154] Phase 1 (t0-t1): At time t0, the drive signal Vin1 of Q1 changes from high to low, so T1 is turned off. The feedback resistance of the drive circuit changes from the original Rsense1||Rsense2 to Rsense1, increasing the feedback resistance and lowering the total output voltage Vo2. Since Vcc remains constant, the amplitude of -Vee2 decreases. This voltage variation range can be freely adjusted by regulating Rsense1, Rsense2, and R1.

[0155] Assuming -Vee2 changes from -5V to 0V:

[0156] Phase 2 (t1-t2): Due to the driving delay of the Q1 driver chip or circuit, Q1 only turns off at time t1. Vds_Q1 gradually increases from 0 to the bus voltage, while Vds_Q2 gradually decreases from the bus voltage to 0. As analyzed above, this phase has a high dv / dt ratio, thus crosstalk will occur. The crosstalk current will discharge Cgs2, causing Vgs2 to decrease. Since -Vee2 is set to 0V at this time, even with pure crosstalk, the decrease in Vgs2 can ensure that the gate voltage of Q2 remains within a safe range. At time t2, Vin2 changes from low to high, the dead time ends, and Q2 turns on.

[0157] Phase 3 (t2-t3): During this period, Q1 is off and Q2 is on. At time t3, Vin2 changes from high to low.

[0158] Phase 4 (t3-t4): At time t4, Vin1 changes from low to high, T1 is turned on, and the sampling resistor of the drive power supply changes from Rsense1 to Rsense1||Rsense2. The sampling resistor decreases, so Vo increases. Since Vcc remains unchanged, -Vee decreases from 0 to -5V.

[0159] Phase 5 (t4-t5): Due to the delay of the driver chip or driver circuit, Q1 is turned on only in this phase. Vds_Q1 changes from high to 0, and Vds_Q2 changes from 0 to high. The high dv / dt causes crosstalk, and the crosstalk current charges Cgs2. Since Vgs2 = -5V at this time, the voltage is low, so even if the voltage overshoots, it will not cause false turn-on.

[0160] See Figure 16 This illustrates a specific structural diagram of another bridge arm drive circuit provided in an embodiment of this application. For example... Figure 16 As shown, in Figure 13Based on this, the first drive power supply 1301 and the second drive power supply 1303 can be isolated DC / DC converters. The positive drive voltage is kept constant by the regulation circuit, and the negative drive voltage is regulated by the output voltage regulation module. The output voltage regulation module can be an adjustable output voltage circuit.

[0161] It should be noted that an adjustable output voltage circuit is used on the side where the driving circuit generates a negative voltage, and the turn-off voltage of the silicon carbide MOSFET is adjusted during crosstalk. The trigger signal for voltage regulation of this circuit is also provided by the driving signal of another silicon carbide MOSFET, but since the signals are not grounded, they need to be isolated by an isolation circuit (i.e., the isolation module in the aforementioned embodiment) in order to control the adjustable output voltage circuit.

[0162] It should also be noted that the auxiliary switching transistors controlled by Vin1 and Vin2 can be MOSFETs / JFETs / IGBTs or other controllable switching transistors. Other circuit methods can be used to achieve the amplitude variation of the drive voltage.

[0163] In one specific implementation, exemplarily, refer to Figure 17 It shows a schematic diagram of drain-source voltage and gate-source voltage variation curves without drive voltage regulation provided by related technologies, and references Figure 18 It shows a schematic diagram of the drain-source voltage and gate-source voltage variation curves with driving voltage regulation provided in an embodiment of this application. (Comparison) Figure 17 and Figure 18 The curve trend was analyzed by performing dual-pulse simulation on the bridge structure circuit without and with the crosstalk suppression circuit provided in the embodiments of this application, and the differences between the traditional driving scheme and the scheme were compared.

[0164] like Figure 17 As shown, in the case of crosstalk under conventional driving voltage regulation without the crosstalk suppression circuit provided in the embodiments of this application, the thin upper line waveform represents the drain-source voltage Vds2 of the lower transistor, and the thick lower line waveform represents the gate-source voltage Vgs2 of the lower transistor. At the instant the upper transistor is turned on, Vgs2 oscillates from -5V to a maximum of approximately -2.5V; at the instant the upper transistor is turned off, the driving voltage Vgs2 drops to a minimum of -7.8V; as... Figure 18 The figure shows the simulation results when the crosstalk suppression circuit provided in the embodiment of this application is used for the drive voltage regulation circuit. The thin line waveform at the top represents the drain-source voltage Vds2 of the lower transistor, and the thick line waveform at the bottom represents the gate-source voltage Vgs2 of the lower transistor. No significant voltage overshoot or drop occurred in Vgs2 at the instant the upper transistor was turned on and turned off. The above simulation comparison verifies the effectiveness of the crosstalk suppression circuit provided in the embodiment of this application.

[0165] The bridge arm drive circuit provided in this application embodiment does not affect the switching speed or efficiency of the silicon carbide MOSFET, and is suitable for different control strategies, regardless of the MOSFET duty cycle. The auxiliary circuit used in this method is simple and low in cost.

[0166] This application provides a bridge arm drive circuit that protects the device from accidental turn-on or gate damage due to crosstalk by changing the turn-off voltage of the silicon carbide MOSFET. The change in drive voltage is triggered by the drive voltage of the other silicon carbide MOSFET in the bridge arm. The sampling resistance is changed using a series sampling resistor. The output voltage of the drive power supply is changed by altering the reference voltage. The turn-off voltage of the silicon carbide MOSFET is adjustable. When the MOSFET is off, its turn-off voltage is low when the other MOSFET is on, preventing accidental turn-on due to voltage overshoot. When the other MOSFET is off, its turn-off voltage is high, preventing device damage due to voltage drop. Thus, based on a voltage regulator module, the negative drive voltage of the MOSFET can be adjusted while maintaining a constant positive drive voltage. This not only suppresses crosstalk between MOSFETs, reducing the risk of accidental turn-on or device damage, but also simplifies the crosstalk suppression circuit and reduces costs.

[0167] In another embodiment of this application, see [link to application]. Figure 19 This illustrates a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Figure 19 As shown, the electronic device 190 includes at least the bridge arm drive circuit 110 described in any of the foregoing embodiments.

[0168] Thus, for the electronic device 190, since its bridge arm drive circuit includes a crosstalk suppression circuit, as specifically described in the previous embodiment, this crosstalk suppression circuit includes a power supply module, a voltage regulator module, and a drive module. The power supply module receives the input voltage and performs voltage conversion processing to obtain an output voltage. The voltage regulator module regulates the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage. The drive module drives a first control signal based on the positive and negative drive voltages to generate a target drive signal. The target drive signal is used to control the on / off state of the field-effect transistor (FET). In this way, based on the voltage regulator module, the negative drive voltage of the FET can be adjusted while the positive drive voltage remains constant. This not only suppresses crosstalk between FETs, reducing the risk of FETs being accidentally turned on or damaged, but also simplifies the crosstalk suppression circuit and reduces costs.

[0169] It should be noted that, in this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0170] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0171] The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0172] The features disclosed in the several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0173] The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0174] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A crosstalk suppression circuit for a field-effect transistor, characterized in that, The crosstalk suppression circuit includes a power supply module, a voltage regulator module, and a driver module; wherein... The power module is used to receive the input voltage and perform voltage conversion processing on the input voltage to obtain the output voltage; The voltage regulator module is used to regulate the output voltage to obtain a stable positive drive voltage and an adjustable negative drive voltage. The driving module is used to drive the first control signal according to the positive driving voltage and the negative driving voltage to generate a first target driving signal; wherein, the first control signal is used to generate the first target driving signal; the first target driving signal is used to control the on and off of one of the field-effect transistors; The crosstalk suppression circuit further includes an input adjustment module, which is connected to the power supply module; wherein... The input adjustment module is used to receive a second control signal, and to sample the input voltage according to the second control signal to obtain a sampled voltage; the second control signal is used to generate a second target drive signal; the second target drive signal is used to control the on and off of another field-effect transistor; The power supply module is used to perform voltage conversion processing on the sampled voltage to obtain the output voltage; wherein the output voltage can be adjusted according to the second control signal to realize the adjustability of the negative drive voltage.

2. The crosstalk suppression circuit according to claim 1, characterized in that, The input adjustment module includes an auxiliary switch, a first resistor, a first sampling resistor, and a second sampling resistor; wherein... The gate of the auxiliary switch is connected to the second control signal, the drain of the auxiliary switch is connected to one end of the second sampling resistor, the source of the auxiliary switch and one end of the first sampling resistor are both connected to the ground terminal, one end of the first resistor is connected to the input voltage, and the other ends of the first resistor, the other ends of the first sampling resistor, and the other ends of the second sampling resistor are all connected to the reference voltage.

3. The crosstalk suppression circuit according to claim 1, characterized in that, The crosstalk suppression circuit further includes an output adjustment module, which is connected to the negative output terminal of the voltage regulator module; wherein, The voltage regulator module is used to regulate the output voltage to obtain a stable positive drive voltage and an initial negative drive voltage. The output adjustment module is used to receive the second control signal and adjust the initial negative drive voltage according to the second control signal to obtain an adjustable negative drive voltage.

4. The crosstalk suppression circuit according to claim 3, characterized in that, The crosstalk suppression circuit further includes an isolation module; wherein the isolation module is located between the second control signal and the output adjustment module to ensure that the second control signal and the signal of the output adjustment module are not grounded.

5. The crosstalk suppression circuit according to claim 1, characterized in that, The crosstalk suppression circuit further includes a first capacitor and a second capacitor; wherein... One end of the first capacitor and one end of the voltage regulator module are both connected to the positive terminal of the output voltage, and the other end of the first capacitor and the other end of the voltage regulator module are both connected to the ground terminal to obtain the stable positive drive voltage; One end of the second capacitor is connected to the negative terminal of the output voltage, and the other end of the second capacitor is connected to the ground terminal to obtain the adjustable negative drive voltage.

6. The crosstalk suppression circuit according to any one of claims 1 to 5, characterized in that, The field-effect transistor is a silicon carbide MOSFET.

7. A bridge arm drive circuit, characterized in that, The bridge arm drive circuit includes a bridge arm module and at least one crosstalk suppression circuit as described in any one of claims 1 to 6.

8. The bridge arm drive circuit according to claim 7, characterized in that, The bridge arm module includes a first field-effect transistor and a second field-effect transistor, and the number of crosstalk suppression circuits is two; wherein... The first crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable first positive drive voltage and an adjustable first negative drive voltage, and to drive a first control signal according to the first positive drive voltage and the first negative drive voltage to generate a first target drive signal; wherein, the first target drive signal is used to control the conduction and cutoff of the first field-effect transistor; The second crosstalk suppression circuit is used to perform voltage conversion processing on the input voltage to obtain an output voltage; and to perform voltage regulation processing on the output voltage to obtain a stable second positive drive voltage and an adjustable second negative drive voltage, and to drive the second control signal according to the second positive drive voltage and the second negative drive voltage to generate a second target drive signal; wherein, the second target drive signal is used to control the conduction and cutoff of the second field-effect transistor.

9. The bridge arm drive circuit according to claim 8, characterized in that, The first negative drive voltage is adjustable according to the second control signal; The second negative drive voltage is adjustable according to the first control signal.

10. A method for suppressing crosstalk in a field-effect transistor, characterized in that, The method includes: The input voltage is converted by the power supply module to obtain the output voltage; The output voltage is regulated by a voltage regulator module to obtain a stable positive drive voltage and an adjustable negative drive voltage. Based on the positive drive voltage and the negative drive voltage, the first control signal is processed by the drive module to generate a target drive signal; wherein, the target drive signal is used to control the on and off of the field-effect transistor; When the method is applied to a bridge arm drive circuit including a first field-effect transistor and a second field-effect transistor, the method further includes: The output voltage is regulated by the first voltage regulator module to obtain a stable first positive drive voltage and an adjustable first negative drive voltage. The first negative drive voltage is adjustable according to the second control signal. Based on the first positive drive voltage and the first negative drive voltage, the first drive module processes the first control signal to generate a first target drive signal; wherein, the first target drive signal is used to control the on and off states of the first field-effect transistor; and The output voltage is regulated by the second voltage regulator module to obtain a stable second positive drive voltage and an adjustable second negative drive voltage. The second negative drive voltage is adjustable according to the first control signal. Based on the second positive drive voltage and the second negative drive voltage, the second drive module drives the second control signal to generate a second target drive signal; wherein, the second target drive signal is used to control the turn-on and turn-off of the second field-effect transistor.

11. An electronic device, characterized in that, The electronic device includes at least the bridge arm drive circuit as described in any one of claims 7 to 9.

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