Micro light emitting diode light emitting device and micro light emitting diode chip transfer method

Abstract

The present application provides a micro-LED light-emitting device and a micro-LED chip transfer method; the micro-LED light-emitting device is configured such that the length of at least one of a first electrode and a second electrode is greater than the length of the electrode of the corresponding connected micro-LED chip, and at the same time, in the direction of the first electrode toward the second electrode, the maximum spacing between different end points thereof is greater than the width of the electrode of the corresponding connected micro-LED chip, so that when the micro-LED chip is twisted, the electrodes of the micro-LED chip can still be normally connected to the first electrode and the second electrode, thereby reducing the possibility of bad points in the micro-LED chip. Moreover, when repairing the first electrode and the second electrode, the repair can be performed by interrupting the first electrode and the second electrode, thereby reducing the difficulty of repair and improving the repair efficiency and preparation efficiency of the micro-LED light-emitting device.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a micro light emitting diode (LED) light emitting device and a micro light emitting diode chip transfer method. Background Art

[0002] Micro LED (micro light emitting diode) light emitting devices are widely used due to their advantages such as self-luminescence, small size, low power consumption and fast response speed. In the preparation process of Micro LED light emitting devices, it is necessary to transfer the LED chips in large quantities. In the process of large-scale transfer, the LED wafer needs to be glued to a temporary carrier to perform laser peeling of the sapphire substrate, and then the transfer under the LED is performed by stamp picking or laser release. In the process of stamp picking or laser transfer, there is a laser peeling process of transferring the LED to the temporary substrate and a process of transferring the LED from the temporary substrate to the driver backplane. However, in these processes, due to the influence of factors such as warping deformation of the transfer film, temporary substrate and stamp, stress and strain, poor film bonding, and laser energy fluctuations, the direction of the LED will be twisted and it will not be able to be accurately bonded to the electrode on the driver backplane. In the repair process, laser removal is generally used or the bad points are judged to be repaired without the transfer process. The repair efficiency is low and the steps are cumbersome, resulting in a low efficiency of the Micro LED preparation process.

[0003] Therefore, in the existing preparation process of Micro LED light-emitting devices, there is a technical problem of low preparation efficiency because the light-emitting chip can only be removed or replaced by laser after being twisted. Summary of the Invention

[0004] The embodiments of the present application provide a micro-light-emitting diode light-emitting device and a micro-light-emitting diode chip transfer method, which are used to alleviate the technical problem of low preparation efficiency caused by the light-emitting chip twisting and having to be removed or replaced by laser in the preparation process of existing Micro LED light-emitting devices.

[0005] The present invention provides a micro-LED light-emitting device, which includes:

[0006] substrate;

[0007] A driving backplane, disposed on one side of the substrate;

[0008] an electrode layer, disposed on a side of the driving backplane away from the substrate, the electrode layer comprising a first electrode and a second electrode;

[0009] A micro light-emitting diode chip is arranged on a side of the electrode layer away from the driving backplane, and the micro light-emitting diode chip includes an anode and a cathode;

[0010] The positive electrode is connected to the first electrode, the negative electrode is connected to the second electrode, the length of at least one of the first electrode and the second electrode is greater than the length of the corresponding electrode of the micro-light-emitting diode chip, and along the direction from the first electrode to the second electrode, the maximum distance between different endpoints of at least one of the first electrode and the second electrode whose length is greater than the length of the electrode of the corresponding micro-light-emitting diode chip is greater than the width of the corresponding electrode of the micro-light-emitting diode chip.

[0011] In some embodiments, the length of the first electrode is greater than the length of the positive electrode, and the maximum distance between different end points of the first electrode along the direction from the first electrode to the second electrode is greater than the width of the positive electrode; the length of the second electrode is greater than the length of the negative electrode, and the maximum distance between different end points of the second electrode along the direction from the first electrode to the second electrode is greater than the width of the negative electrode.

[0012] In some embodiments, the width of the first electrode is greater than the width of the positive electrode, and the width of the second electrode is greater than the width of the negative electrode.

[0013] In some embodiments, the shape of the electrode formed by the first electrode and the second electrode includes one of a circular ring, an elliptical ring, a semicircle, a semi-ellipse and a square.

[0014] In some embodiments, the first electrode is in the shape of a semicircular ring, the second electrode is in the shape of a semicircular ring, and two ends of the first electrode and two ends of the second electrode are insulated from each other.

[0015] In some embodiments, the first electrode and the second electrode are symmetrical about a symmetry axis, and the first electrode and the second electrode are disconnected at the symmetry axis.

[0016] In some embodiments, the spacing between any end of the first electrode and the opposite end of the second electrode is smaller than the width of the positive electrode; and the spacing between any end of the first electrode and the opposite end of the second electrode is smaller than the width of the negative electrode.

[0017] In some embodiments, the width of the first electrode is greater than the width of the second electrode; or the width of the second electrode is greater than the width of the first electrode.

[0018] In some embodiments, the maximum distance between any point on the first electrode and the second electrode is greater than the distance between the positive electrode and the negative electrode.

[0019] At the same time, an embodiment of the present application provides a micro-LED chip transfer method, which transfers the micro-LED chip in the micro-LED light-emitting device described in any of the above embodiments. The micro-LED chip transfer method includes:

[0020] forming a driving backplane and an electrode layer on the substrate in sequence;

[0021] Transfer printing a micro light emitting diode chip onto the electrode layer;

[0022] When the positive electrode of the micro-LED chip is connected to the first electrode and the second electrode, and the negative electrode of the micro-LED chip is connected to the first electrode and the second electrode, the first electrode and the second electrode are interrupted.

[0023] Beneficial effects: The present application provides a micro-light-emitting diode light-emitting device and a micro-light-emitting diode chip transfer method; the micro-light-emitting diode light-emitting device includes a substrate, a driving backplane, an electrode layer and a micro-light-emitting diode chip, the driving backplane is arranged on one side of the substrate, the electrode layer is arranged on the side of the driving backplane away from the substrate, the electrode layer includes a first electrode and a second electrode, the micro-light-emitting diode chip is arranged on the side of the electrode layer away from the driving backplane, and the micro-light-emitting diode chip includes a positive electrode and a negative electrode; wherein the positive electrode is connected to the first electrode, the negative electrode is connected to the second electrode, the length of at least one of the first electrode and the second electrode is greater than the length of the electrode of the corresponding connected micro-light-emitting diode chip, and along the direction from the first electrode to the second electrode, the maximum spacing between different endpoints of at least one of the first electrode and the second electrode whose length is greater than the length of the electrode of the corresponding connected micro-light-emitting diode chip is greater than the width of the electrode of the corresponding connected micro-light-emitting diode chip. The present application makes the length of at least one of the first electrode and the second electrode greater than the length of the electrode of the corresponding connected micro-LED chip, and at the same time, in the direction of the first electrode toward the second electrode, the maximum spacing between the different end points thereof is greater than the width of the electrode of the corresponding connected micro-LED chip. When the micro-LED chip is twisted, since at least one of the first electrode and the second electrode has a width greater than the width of the corresponding electrode in the horizontal and vertical directions, the electrode of the micro-LED chip can still be normally connected to the first electrode and the second electrode, thereby reducing the possibility of bad points in the micro-LED chip. Moreover, when repairing the first electrode and the second electrode, the repair can be performed by interrupting the first electrode and the second electrode, thereby reducing the difficulty of repair and improving the repair efficiency and preparation efficiency of the micro-LED light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0025] Figure 1 Schematic diagram of an existing micro light emitting diode light emitting device.

[0026] Figure 2 This is a first schematic diagram of a micro light emitting diode light emitting device provided in an embodiment of the present application.

[0027] Figure 3 This is a second schematic diagram of a micro light emitting diode light emitting device provided in an embodiment of the present application.

[0028] Figure 4 This is a third schematic diagram of the micro light emitting diode light emitting device provided in an embodiment of the present application.

[0029] Figure 5 This is a flow chart of the micro-LED chip transfer method provided in an embodiment of the present application.

[0030] Figure 6 This is a fourth schematic diagram of the micro light emitting diode light emitting device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0032] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present application, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0033] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections, electrical connections, or mutual communication; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0034] In this application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0035] The disclosure below provides many different embodiments or examples for realizing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. In addition, the present application may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those of ordinary skill in the art will appreciate the application of other processes and / or the use of other materials.

[0036] like Figure 1 As shown, from Figure 1 As can be seen in (a), when the LED chip 12 is normally connected to the driver backplane, the positive electrode 121 of the LED chip 12 is connected to the anode 111 of the driver backplane, and the negative electrode 122 of the LED chip 12 is connected to the cathode 112 of the driver backplane. However, since the LED chip is prone to twisting during the transfer process, such as Figure 1As shown in (b), after the LED chip 12 is twisted, the positive electrode 121 of the LED chip 12 is offset from the anode 111 of the driver backplane, and the negative electrode 122 of the LED chip 12 is offset from the cathode 112 of the driver backplane, resulting in the inability to transmit signals between the LED chip 12 and the driver backplane, and the LED chip cannot light up. When repairing the LED chip, the only option is to remove the LED chip by laser and re-transfer it, or to determine that it is a bad point and re-make it. These solutions all require the transfer process of the LED chip to be repeated, resulting in a cumbersome, inefficient, and costly repair process for the LED chip. Therefore, in the preparation process of existing Micro LED light-emitting devices, there is a technical problem of low preparation efficiency due to the fact that the light-emitting chip can only be removed by laser or replaced after being twisted.

[0037] In response to the above technical problems, the embodiments of the present application provide a micro-LED light-emitting device and a micro-LED chip transfer method to alleviate the above technical problems.

[0038] like Figure 2 、 Figure 3 As shown, the embodiment of the present application provides a micro light emitting diode light emitting device, and the micro light emitting diode light emitting device 2 includes:

[0039] substrate 21;

[0040] A driving backplane 22 is provided on one side of the substrate 21;

[0041] The electrode layer 23 is provided on a side of the driving backplane 22 away from the substrate 21 , and includes a first electrode 231 and a second electrode 232 ;

[0042] A micro-LED chip 24 is provided on a side of the electrode layer 23 away from the driving backplane 22 , and the micro-LED chip 24 includes an anode 241 and a cathode 242 ;

[0043] The positive electrode 241 is connected to the first electrode 231, and the negative electrode 242 is connected to the second electrode 232. The length of at least one of the first electrode 231 and the second electrode 232 is greater than the length of the electrode of the corresponding micro-LED chip 24 (for example, the length L1 of the first electrode 231 is greater than the length K1 of the positive electrode 241), and the length of the positive electrode 241 is greater than the length K1 of the positive electrode 241. Figure 3In the up and down directions), in the first electrode 231 and the second electrode 232, the maximum distance between the different end points of at least one of the lengths is greater than the length of the electrode of the corresponding connected micro-light-emitting diode chip 24 (for example, the maximum distance between the different end points of the first electrode 231 is H2), and is greater than the width of the electrode of the corresponding connected micro-light-emitting diode chip 24 (for example, the maximum distance H2 between the different end points of the first electrode 231 is greater than the width K2 of the positive electrode 241).

[0044] An embodiment of the present application provides a micro-LED light-emitting device, which has a length of at least one of a first electrode and a second electrode that is greater than the length of the electrode of the corresponding connected micro-LED chip. At the same time, in the direction of the first electrode toward the second electrode, the maximum spacing between different end points thereof is greater than the width of the electrode of the corresponding connected micro-LED chip. When the micro-LED chip is twisted, since at least one of the first electrode and the second electrode has a width greater than the width of the corresponding electrode in the horizontal and vertical directions, the electrode of the micro-LED chip can still be normally connected to the first electrode and the second electrode, thereby reducing the possibility of bad points in the micro-LED chip. Moreover, when repairing the first electrode and the second electrode, the repair can be performed by interrupting the first electrode and the second electrode, thereby reducing the difficulty of repair and improving the repair efficiency and preparation efficiency of the micro-LED light-emitting device.

[0045] It should be noted that, along the direction from the first electrode to the second electrode, the maximum spacing between different endpoints of the first electrode and the second electrode refers to the maximum distance between endpoints on the first electrode and the second electrode in that direction, for example Figure 3 In the longitudinal direction, the maximum distance between different end points of the first electrode and the second electrode is the distance between the vertex and a point on the bottom surface.

[0046] It should be noted that, in the present application, by making at least one of the first electrode and the second electrode have a transverse length and a longitudinal spacing greater than the corresponding connected electrode, when the micro-LED chip is twisted or offset, since the corresponding first electrode and / or second electrode are extended in both the transverse and longitudinal directions, the positive electrode and the negative electrode can still remain connected to the first electrode and the second electrode, thereby avoiding the micro-LED chip from being disconnected from the first electrode and the second electrode, improving the yield of the micro-LED chip transfer, and improving the preparation efficiency of the micro-LED light-emitting device.

[0047] It should be noted that, since when the micro-LED chip is twisted or offset, there may be a larger offset of only the positive pole or the negative pole. Therefore, the length of at least one of the first electrode and the second electrode is made greater than the length of the electrode of the corresponding connected micro-LED chip. At the same time, in the direction from the first electrode to the second electrode, the maximum spacing between its different end points is made greater than the width of the electrode of the corresponding connected micro-LED chip. This can also improve the transfer yield of the micro-LED chip and improve the preparation efficiency of the micro-LED light-emitting device.

[0048] When the micro-LED chip is twisted, the positive and negative electrodes are twisted and cannot be connected to the anode and cathode. Figure 3 As shown, the length L1 of the first electrode 231 is greater than the length K1 of the anode electrode 241. Along the direction from the first electrode 231 to the second electrode 232, the maximum spacing H2 between different end points of the first electrode 231 is greater than the width K2 of the anode electrode 241. The length of the second electrode 232 is greater than the length K3 of the cathode electrode 242. Along the direction from the first electrode 231 to the second electrode 232, the maximum spacing H1 between different end points of the second electrode 232 is greater than the width K4 of the cathode electrode 242. By extending the first electrode in both the transverse and longitudinal directions, with the transverse length and longitudinal coverage area of ​​the first electrode being greater than the length and width of the anode electrode, and extending the second electrode in both the transverse and longitudinal directions, with the transverse length and longitudinal coverage area of ​​the second electrode being greater than the length and width of the cathode electrode, the anode electrode and the first electrode remain connected, and the cathode electrode and the second electrode remain connected, when the micro-LED chip is twisted. This improves the yield rate during transfer printing of the micro-LED chip, reduces the number of defective pixels in the micro-LED chip, and improves the manufacturing efficiency of micro-LED light-emitting devices.

[0049] In order to solve the problem that the micro-LED chip is offset during the transfer process and cannot be turned on normally, in one embodiment, Figure 3 As shown, the width L2 of the first electrode 231 is greater than the width K2 of the anode electrode 241, and the width L1 of the second electrode 232 is greater than the width K4 of the cathode electrode 242. By making the width of the first electrode greater than the width of the anode electrode, and the width of the second electrode greater than the width of the cathode electrode, when the micro-LED chip is offset, the anode electrode and the first electrode can still remain connected, and the cathode electrode and the second electrode can still remain connected, thereby improving the yield rate of the micro-LED chip during transfer, reducing the number of bad pixels in the micro-LED chip, and improving the production efficiency of micro-LED light-emitting devices.

[0050] In one embodiment, the shape of the electrode formed by the first and second electrodes includes one of a circular ring, an elliptical ring, a semicircle, a semi-ellipse, and a square. By extending the first and second electrodes in the horizontal and vertical directions so that the combined shape of the first and second electrodes is the aforementioned shape, the positive and negative electrodes of the micro-LED chip can still be connected to the first and second electrodes, respectively, when twisted. This improves the yield rate of the micro-LED chip during transfer, reduces the number of bad pixels in the micro-LED chip, and improves the production efficiency of micro-LED light-emitting devices.

[0051] The micro-LED chip is prone to twisting during the transfer process, causing the positive and negative electrodes to twist and be unable to connect to the electrodes. In one embodiment, Figure 3 As shown, the first electrode 231 is shaped like a semicircular ring, the second electrode 232 is shaped like a semicircular ring, and the two ends of the first electrode 231 and the two ends of the second electrode 232 are insulated from each other. By forming the first electrode and the second electrode into a circular ring, with the first electrode being a semicircular ring and the second electrode being a semicircular ring, the micro-LED chip twists along the annular region of the circular ring when twisted. When the twist angle of the micro-LED chip is less than 90 degrees, the positive electrode can remain connected to the first electrode, and the negative electrode can remain connected to the second electrode. This improves the torsion tolerance angle of the micro-LED chip, improves the yield rate of the micro-LED chip during transfer printing, and improves the production efficiency of micro-LED light-emitting devices.

[0052] In one embodiment, the first electrode and the second electrode are symmetrical about an axis of symmetry, and the first electrode and the second electrode are disconnected at the axis of symmetry. By making the first electrode and the second electrode symmetrical about the axis of symmetry, the directions and widths of the extension portions of the first electrode and the second electrode are consistent. Therefore, when the micro-LED chip is twisted, the twist angles of the positive and negative electrodes of the micro-LED chip are consistent, so that the positive and negative electrodes of the micro-LED chip can respectively maintain connection with the first and second electrodes, avoiding the problem of the positive or negative electrode of the micro-LED chip being connected to the electrode on one side while not on the other side. This improves the yield rate of the micro-LED chip during transfer printing and improves the production efficiency of micro-LED light-emitting devices.

[0053] Specifically, the first electrode and the second electrode are set to be semicircular rings. When the micro-light-emitting diode chip is twisted during transfer, the positive and negative electrodes of the micro-light-emitting diode chip can be connected to the first and second electrodes respectively on the twisted arc, and the first electrode and the second electrode are outside the area where they need to be connected to the positive and negative electrodes respectively, so that the distance between the first electrode and the second electrode is larger, thereby avoiding a short circuit between the first electrode and the second electrode, which causes signal interference.

[0054] In one embodiment, if Figure 3 As shown, the spacing H3 between either end of the first electrode 231 and the opposing end of the second electrode 232 is less than the width K2 of the anode electrode 241; and the spacing H3 between either end of the first electrode 231 and the opposing end of the second electrode 232 is less than the width K4 of the cathode electrode 242. By ensuring that the spacing between the first and second electrodes is less than the width of the anode electrode, and that the spacing between the first and second electrodes is less than the width of the cathode electrode, the anode and cathode electrodes remain connected to the first and second electrodes when the micro-LED chip twists, preventing disconnection of the anode and cathode electrodes from the first and second electrodes. This prevents micro-LED chip failure, improves the transfer yield of the micro-LED chip, and enhances the manufacturing efficiency of micro-LED light-emitting devices.

[0055] In one embodiment, the first electrode is an anode and the second electrode is a cathode.

[0056] In one embodiment, if Figure 2 As shown, the micro LED chip 24 further includes a chip body 243 .

[0057] In the above embodiment, a detailed description is given by taking the case where the width of the first electrode is equal to the width of the second electrode as an example. When the widths of the positive and negative electrodes of the micro-LED chip are equal and the micro-LED chip is twisted, the positive and negative electrodes of the micro-LED chip can remain connected to the first and second electrodes by making the width of the first electrode equal to the width of the second electrode.

[0058] In one embodiment, the width of the first electrode is greater than the width of the second electrode; or the width of the second electrode is greater than the width of the first electrode. When the micro-LED chip is twisted and deflected, the offset direction of the micro-LED chip is not on an arc line, but there is an offset in a certain direction. In this case, the width of the first electrode can be greater than the width of the second electrode, or the width of the second electrode can be greater than the width of the first electrode. When the micro-LED chip is offset, due to the increase in the width of the first electrode and the second electrode, the positive and negative electrodes of the micro-LED chip can still contact the first electrode and the second electrode. After the micro-LED chip is twisted and deflected, it can still be connected to the electrodes on the driving backplane, thereby improving the yield rate of the micro-LED chip during transfer and improving the production efficiency of the micro-LED light-emitting device.

[0059] In one embodiment, the maximum distance between any point on the first electrode and the second electrode is greater than the distance between the positive electrode and the negative electrode. By making the maximum distance between any point on the first electrode and the second electrode greater than the distance between the positive electrode and the negative electrode, when the micro-LED chip is twisted, the positive electrode and the negative electrode remain within the range of the first electrode and the second electrode, and the positive electrode and the negative electrode can remain connected to the first electrode and the second electrode, thereby improving the yield of the micro-LED chip during transfer and improving the preparation efficiency of the micro-LED light-emitting device.

[0060] like Figure 3 、 Figure 4 As shown, Figure 3 Schematic diagram of a micro-LED light-emitting device when the micro-LED chip is not twisted. Figure 4 (a) is a schematic diagram of a micro-LED light-emitting device when the micro-LED chip is twisted to the right. Figure 4 (b) is a schematic diagram of a micro-LED light-emitting device when the micro-LED chip is twisted to the left. Compared with the current micro-LED chip, when the micro-LED chip is twisted, the micro-LED chip and the electrode on the driving backplane will be disconnected. In this application, the first electrode and the second electrode in the electrode layer are designed, such as Figure 4 As shown, taking the first electrode and the second electrode as a semicircular ring as an example, no matter whether the micro-LED chip is twisted to the left or to the right, the positive and negative electrodes of the micro-LED chip can remain connected to the first electrode and the second electrode respectively, thereby improving the twisting compatibility of the micro-LED chip.

[0061] The above embodiment is described in detail using the example of a micro-LED chip with a torsion angle of less than 90 degrees. Compared with the current electrode design, the torsion angle that the micro-LED chip can tolerate is improved, the yield rate of the micro-LED chip during transfer is improved, and the preparation efficiency of the micro-LED light-emitting device is improved.

[0062] At the same time, if Figure 5 As shown, an embodiment of the present application provides a micro-LED chip transfer method, which transfers the micro-LED chip in the micro-LED light-emitting device described in any of the above embodiments. The micro-LED chip transfer method includes:

[0063] S1, forming a driving backplane and an electrode layer on the substrate in sequence;

[0064] S2, transfer printing of micro light-emitting diode chips on the electrode layer;

[0065] S3, when the positive electrode of the micro-LED chip is connected to the first electrode and the second electrode, and the negative electrode of the micro-LED chip is connected to the first electrode and the second electrode, the first electrode and the second electrode are disconnected.

[0066] An embodiment of the present application provides a micro-LED chip transfer method. The micro-LED chip transfer method repairs the micro-LED light-emitting device by disconnecting the first electrode and the second electrode when the positive electrode of the micro-LED chip is connected to the first electrode and the second electrode and the negative electrode of the micro-LED chip is connected to the first electrode and the second electrode. The repair process only requires disconnecting the first electrode and the second electrode, and there is no need to remove the micro-LED chip or remake the micro-LED chip, thereby reducing the difficulty of repair and improving the repair efficiency and preparation efficiency of the micro-LED light-emitting device.

[0067] Considering that when the micro-LED chip is twisted 90 degrees, the first electrode, the positive electrode, the negative electrode, and the second electrode will be connected. Figure 6 As shown, Figure 6 (a) is a schematic diagram of a micro-LED light-emitting device when the micro-LED chip is twisted 90 degrees. Figure 6 (b) is a schematic diagram of the repaired micro-LED light emitting device. Figure 6 As can be seen in (a), when the micro-LED chip is twisted 90 degrees, the first electrode, the positive electrode, the negative electrode and the second electrode are all connected together. Therefore, the first electrode and the second electrode need to be disconnected, as shown in FIG. Figure 6 As shown in (b), the first electrode and the second electrode are interrupted by laser to form a groove 31, so that the first electrode and the second electrode are disconnected. At this time, the positive electrode is still connected to the first electrode, and the negative electrode is still connected to the second electrode. There is no crosstalk in the signal, and the repair process only requires laser interruption. There is no need to remove the LED chip or mark it as a bad point, which reduces the difficulty of repair and improves the repair efficiency.

[0068] It should be noted that the 90 degrees in the above embodiment is an illustrative angle. In fact, it may be an angle range. For example, when the torsion angle range of the micro-light-emitting diode chip is 88 degrees to 92 degrees, the first electrode, positive electrode, negative electrode, and second electrode are all connected together. At this time, the above solution can be used for repair, which will not be repeated here.

[0069] When the twisting angle is greater than 90 degrees, the micro-LED chip can be removed for repair.

[0070] According to the above embodiments, it can be seen that:

[0071] The embodiments of the present application provide a micro-LED light-emitting device and a method for transferring a micro-LED chip; the micro-LED light-emitting device includes a substrate, a driving backplane, an electrode layer and a micro-LED chip, the driving backplane is arranged on one side of the substrate, the electrode layer is arranged on a side of the driving backplane away from the substrate, the electrode layer includes a first electrode and a second electrode, the micro-LED chip is arranged on a side of the electrode layer away from the driving backplane, and the micro-LED chip includes a positive electrode and a negative electrode; wherein the positive electrode is connected to the first electrode, the negative electrode is connected to the second electrode, the length of at least one of the first electrode and the second electrode is greater than the length of the electrode of the corresponding connected micro-LED chip, and along the direction from the first electrode to the second electrode, the maximum distance between different endpoints of at least one of the first electrode and the second electrode whose length is greater than the length of the electrode of the corresponding connected micro-LED chip is greater than the width of the electrode of the corresponding connected micro-LED chip. The present application makes the length of at least one of the first electrode and the second electrode greater than the length of the electrode of the corresponding connected micro-LED chip, and at the same time, in the direction of the first electrode toward the second electrode, the maximum spacing between the different end points thereof is greater than the width of the electrode of the corresponding connected micro-LED chip. When the micro-LED chip is twisted, since at least one of the first electrode and the second electrode has a width greater than the width of the corresponding electrode in the horizontal and vertical directions, the electrode of the micro-LED chip can still be normally connected to the first electrode and the second electrode, thereby reducing the possibility of bad points in the micro-LED chip. Moreover, when repairing the first electrode and the second electrode, the repair can be performed by interrupting the first electrode and the second electrode, thereby reducing the difficulty of repair and improving the repair efficiency and preparation efficiency of the micro-LED light-emitting device.

[0072] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0073] The above is a detailed introduction to a micro-LED light-emitting device and a micro-LED chip transfer method provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A micro light emitting diode light emitting device, characterized in that: include: substrate; A driving backplane, disposed on one side of the substrate; an electrode layer, disposed on a side of the driving backplane away from the substrate, the electrode layer comprising a first electrode and a second electrode; A micro light-emitting diode chip is arranged on a side of the electrode layer away from the driving backplane, and the micro light-emitting diode chip includes an anode and a cathode; The anode is connected to the first electrode, the cathode is connected to the second electrode, at least one of the first and second electrodes is longer than the length of the corresponding electrode of the micro-LED chip, and along the direction from the first electrode to the second electrode, the maximum distance between different endpoints of at least one of the first and second electrodes whose length is longer than the length of the corresponding electrode of the micro-LED chip is greater than the width of the corresponding electrode of the micro-LED chip. The length of the first electrode is greater than the length of the positive electrode, and the maximum distance between different end points of the first electrode along the direction from the first electrode to the second electrode is greater than the width of the positive electrode; the length of the second electrode is greater than the length of the negative electrode, and the maximum distance between different end points of the second electrode along the direction from the first electrode to the second electrode is greater than the width of the negative electrode; the width of the first electrode is greater than the width of the positive electrode, and the width of the second electrode is greater than the width of the negative electrode; the shape of the electrode formed by the first electrode and the second electrode includes one of a circular ring, an elliptical ring, a semicircle, a semi-ellipse and a square.

2. The micro-LED light emitting device according to claim 1, characterized in that: The first electrode is in the shape of a semicircle, the second electrode is in the shape of a semicircle, and two ends of the first electrode and two ends of the second electrode are insulated from each other.

3. The micro-LED light emitting device according to claim 2, characterized in that: The first electrode and the second electrode are symmetrical about a symmetry axis, and the first electrode and the second electrode are disconnected at the symmetry axis.

4. The micro-LED light emitting device according to claim 2, wherein: The distance between any end of the first electrode and the opposite end of the second electrode is smaller than the width of the positive electrode; and the distance between any end of the first electrode and the opposite end of the second electrode is smaller than the width of the negative electrode.

5. The micro-LED light emitting device according to claim 1, wherein: The width of the first electrode is greater than that of the second electrode; or the width of the second electrode is greater than that of the first electrode.

6. The micro-LED light emitting device according to claim 1, wherein: The maximum distance between any point on the first electrode and the second electrode is greater than the distance between the positive electrode and the negative electrode.

7. A micro light emitting diode chip transfer method, characterized in that: The micro-LED chip in the micro-LED light-emitting device according to any one of claims 1 to 6 is transferred, and the micro-LED chip transfer method comprises: forming a driving backplane and an electrode layer on the substrate in sequence; Transfer printing a micro light emitting diode chip onto the electrode layer; When the positive electrode of the micro-LED chip is connected to the first electrode and the second electrode, and the negative electrode of the micro-LED chip is connected to the first electrode and the second electrode, the first electrode and the second electrode are interrupted.

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